QM3014M6_N6_ Qm3014m6, Qm3014n6 Ubiq

User Manual: Marking of electronic components, SMD Codes M3, M3*, M3002N, M3014M, M3014N, M3016M, M3016N, M3018M, M3018N, M3022M, M33, M36, M3=***, M3T, M3V. Datasheets 2SA812, ADM1813-10AKS, ADM1813-10ART, ADM1813-5AKS, ADM1813-5ART, BZX384-B16, DTB743XE, DTB743XM, LM258ADGKR, MMSZ5258, QM3002N3, QM3014M6, QM3014N6, QM3016M6, QM3016N6, QM3018M6, QM3018N6, QM3022M6, RT9818D-13GV, SM36.

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1

QM3014M6/N6

N-Ch 30V Fast Switching MOSFETs

d

Symbol Parameter Rating Units

VDS Drain-Source Voltage 30 V

VGS Gate-Source Voltage ±20 V

ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 50 A

ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 38 A

ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 11 A

IDM Pulsed Drain Current2 100 A

EAS Single Pulse Avalanche Energy3 53 mJ

IAS Avalanche Current 22 A

PD@TC=25℃ Total Power Dissipation4 41.7 W

TSTG Storage Temperature Range -55 to 150 ℃

TJ Operating Junction Temperature Range -55 to 150 ℃

Symbol Parameter Typ. Max. Unit

RθJA Thermal Resistance Junction-Ambient 1 --- 62

℃/W

RθJC Thermal Resistance Junction-Case1 --- 3

℃/W

BVDSS RDSON ID

30V 12mΩ 50A

Absolute Maximum Ratings

Thermal Data

Rev A.0

1

D

051310

The QM3014M6/N6 is the highest performance

trench N-ch MOSFETs with extreme high cell

density , which provide excellent RDSON and

gate charge for most of the synchronous buck

converter applications .

The QM3014M6/N6 meet the RoHS and Green

Product requirement , 100% EAS guaranteed

with full function reliability approved.

z Advanced high cell density Trench technology

z Super Low Gate Charge

z Excellent CdV/dt effect decline

z 100% EAS Guaranteed

z Green Device Available

General Description

Features

Applications

z High Frequency Point-of-Load Synchronous

Buck Converter for MB/NB/UMPC/VGA

z Networking DC-DC Power System

z Load Switch

Pin Configuration

Product Summery

D

SG

S

S

D

S G

S

S

QM3014M6in QM3014N6in

2

QM3014M6/N6

N-Ch 30V Fast Switching MOSFETs

Symbol Parameter Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V

△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.0232 --- V/℃

VGS=10V , ID=15A --- 10 12

RDS(ON) Static Drain-Source On-Resistance2

VGS=4.5V , ID=10A --- 15 18

mΩ

VGS(th) Gate Threshold Voltage 1.0 1.5 2.5 V

△VGS(th) VGS(th) Temperature Coefficient

VGS=VDS , ID =250uA

--- -5.08 --- mV/℃

VDS=24V , VGS=0V , TJ=25℃ --- --- 1

IDSS Drain-Source Leakage Current

VDS=24V , VGS=0V , TJ=55℃ --- --- 5

uA

IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- ---

±100 nA

gfs Forward Transconductance VDS=5V , ID=30A --- 24.4 --- S

Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.8 36 Ω

Qg Total Gate Charge (4.5V) --- 9.82 ---

Qgs Gate-Source Charge --- 2.24 ---

Qgd Gate-Drain Charge

VDS=20V , VGS=4.5V , ID=12A

--- 5.54 ---

nC

Td(on) Turn-On Delay Time --- 6.4 ---

Tr Rise Time --- 39 ---

Td(off) Turn-Off Delay Time --- 20.8 ---

Tf Fall Time

VDD=15V , VGS=10V , RG=1.5Ω

ID=20A

--- 4.7 ---

ns

Ciss Input Capacitance --- 896 ---

Coss Output Capacitance --- 126 ---

Crss Reverse Transfer Capacitance

VDS=15V , VGS=0V , f=1MHz

--- 108 ---

pF

Symbol Parameter Conditions Min. Typ. Max. Unit

EAS Single Pulse Avalanche Energy5 VDD=25V , L=0.1mH , IAS=15A 24.6 --- --- mJ

Symbol Parameter Conditions Min. Typ. Max. Unit

IS Continuous Source Current1,6 --- --- 50 A

ISM Pulsed Source Current2,6

VG=VD=0V , Force Current

--- --- 100 A

VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V

Note :

1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=22A

4.The power dissipation is limited by 175℃ junction temperature

5.The Min. value is 100% EAS tested guarantee.

6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Guaranteed Avalanche Characteristics

Diode Characteristics

3

QM3014M6/N6

N-Ch 30V Fast Switching MOSFETs

0

2

4

6

8

10

12

00.250.50.751

V

DS

, Drain-to-Source Voltage (V)

I

D

Drain Current (A)

V

GS

=10V

V

GS

=7V

V

GS

=5V

V

GS

=4.5V

V

GS

=3V

10

14

18

22

246810

V

GS

(V)

R

DSON

(mΩ)

I

D

=12A

0

2

4

6

8

10

12

0 0.3 0.6 0.9 1.2

VSD , Source-to-Drain Voltage (V)

IS Source Current(A)

T

J

=150℃T

J

=25℃

0

2

4

6

8

10

0 7.5 15 22.5 30

QG , Total Gate Charge (nC)

VGS

Gate to Source Voltage (V)

ID=12A

0

0.5

1

1.5

-50 25 100 175

T

J

,Junction Temperature ( ℃)

Normalized V

GS(th)

0.5

1.0

1.5

2.0

-50 0 50 100 150

T

J

, Junction Temperature (℃)

Normalized On Resistance

Typical Characteristics

Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage

Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics

Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

4

QM3014M6/N6

N-Ch 30V Fast Switching MOSFETs

10

100

1000

10000

1 5 9 13172125

V

DS

Drain to Source Voltage(V)

Capacitance (pF)

F=1.0MHz

Ciss

Coss

Crss

0.01

0.10

1.00

10.00

100.00

1000.00

0.1 1 10 100

V

DS

(V)

I

D

(A)

10us

100us

10ms

100ms

DC

T

C

=25℃

Single Pulse

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

t , Pulse Width (s)

Normalized Thermal Response (R

θJC

)

PDM

D = TON/T

TJpeak = TC + PDM x RθJC

TON

T

0.02

0.01

0.05

0.1

0.3

DUTY=0.5

SINGLE PULSE

Fig.8 Safe Operating Area

Fig.9 Normalized Maximum Transient Thermal Impedance

Fig.7 Capacitance

Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Wave