RF4E070BN Datasheet. Www.s Manuals.com. Rohm

User Manual: Marking of electronic components, SMD Codes E0, E0*, E0**, E0-***, E00, E01, E02, E06***, E070BN. Datasheets BZX585-B15, DTDG14GP, DTDG23YP, NB2779A, RF4E070BN, RT9011-FQPQW, RT9011-SSPQWB, RT9167-15PB, SC4503WLTRT, TC1072-4.0VCH713.

Open the PDF directly: View PDF PDF.
Page Count: 12

DownloadRF4E070BN - Datasheet. Www.s-manuals.com. Rohm
Open PDF In BrowserView PDF
RF4E070BN
Nch 30V 7A Power MOSFET

Datasheet
lOutline

VDSS

30V

RDS(on) at 10V (Max.)

28.6mW

RDS(on) at 4.5V (Max.)

40.0mW

ID

7A

PD

2.0W

(6)

(5)

HUML2020L8
(1)

(2)

(4)

(8)
(3)

(5)

(6)

(7)
(3)

lFeatures

(4)

(2)

(1)

lInner circuit

1) Low on - resistance.
(1)
(2)
(3)
(4)

2) High Power Small Mold Package (HUML2020L8).
3) Pb-free lead plating ; RoHS compliant
4) Halogen Free

Drain
Drain
Gate
Source

(5)
(6)
(7)
(8)

Drain
Drain
Drain
Source

*1 BODY DIODE

5) 100% Rg and UIS Tested

lPackaging specifications
Packaging
lApplication
DC/DC converters

Type

Load switch

Taping

Reel size (mm)

180

Tape width (mm)

10

Basic ordering unit (pcs)

3,000

Taping code

TR

Marking

HH

lAbsolute maximum ratings(Ta = 25°C) ,unless otherwise specified
Parameter

Symbol

Value

Unit

Drain - Source voltage

VDSS

30

V

Continuous drain current

ID *1

7

A

28

A

Pulsed drain current

ID,pulse

*2

Gate - Source voltage

VGSS

20

V

Power dissipation

PD *3

2.0

W

Tj

150

°C

Tstg

-55 to +150

°C

Junction temperature
Range of storage temperature

www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.

1/10

2013.04 - Rev.A

Data Sheet

RF4E070BN
lThermal resistance
Parameter

Symbol

Thermal resistance, junction - ambient

Values

Unit

Min.

Typ.

Max.

RthJA *3

-

-

62.5

°C/W

RthJC

-

-

-

°C/W

lElectrical characteristics(Ta = 25°C) ,unless otherwise specified
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient

Symbol

V(BR)DSS

Conditions

VGS = 0V, ID = 1mA

ΔV(BR)DSS ID=1mA
ΔTj
referenced to 25°C

Values

Unit

Min.

Typ.

Max.

30

-

-

V

-

18

-

mV/°C

Zero gate voltage drain current

IDSS

VDS = 30V, VGS = 0V

-

-

1

mA

Gate - Source leakage current

IGSS

VGS = 20V, VDS = 0V

-

-

100

nA

Gate threshold voltage

VGS (th)

VGS = VDS, ID = 250mA

1.0

-

2.0

V

Gate threshold voltage
temperature coefficient

ΔV(GS)th
ΔTj

ID=1mA
referenced to 25°C

-

-2.1

-

mV/°C

Static drain - source
on - state resistance

RDS(on) *4

VGS=10V, ID=7A

-

22.0

28.6

VGS=4.5V, ID=7A

-

30.8

40.0

f = 1MHz, open drain

-

3.2

-

W

4.0

-

-

S

Gate input resistannce
Transconductance

RG
gfs *4

VDS=5V, ID=7A

mW

*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 Mounted on a FR4 (40×40×0.8mm)
*4 Pulsed

www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.

2/10

2013.04 - Rev.A

Data Sheet

RF4E070BN
lElectrical characteristics(Ta = 25°C)
Parameter

Symbol

Conditions

Values
Min.

Typ.

Max.

Input capacitance

Ciss

VGS = 0V

-

410

-

Output capacitance

Coss

VDS = 15V

-

50

-

Reverse transfer capacitance

Crss

f = 1MHz

-

40

-

VDD ⋍ 15V, VGS = 10V

-

6

-

ID = 3.5A

-

8

-

RL = 4.29W

-

23

-

RG = 10W

-

5

-

Turn - on delay time

td(on) *4
tr *4

Rise time
Turn - off delay time

td(off) *4
tf *4

Fall time

Unit

pF

ns

lGate Charge characteristics(Ta = 25C)
Parameter

Total gate charge

Symbol

Qg *4

Gate - Source charge

Qgs *4

Gate - Drain charge

Qgd *4

Conditions
VDD ⋍ 15V, ID=7A
VGS = 10V

VDD ⋍ 15V, ID=7A
VGS = 4.5V

Values
Min.

Typ.

Max.

-

8.9

-

-

4.6

-

-

1.9

-

-

1.4

-

Unit

nC

lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Inverse diode continuous,
forward current
Forward voltage

www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.

Symbol

IS *1
VSD *4

Conditions

Values

Unit

Min.

Typ.

Max.

Ta = 25°C

-

-

1.67

A

VGS = 0V, Is =1.67A

-

-

1.2

V

3/10

2013.04 - Rev.A

Data Sheet

RF4E070BN
lElectrical characteristic curves

Fig.2 Maximum Safe Operating Area

Fig.1 Power Dissipation Derating Curve

100

120

PW = 100ms
PW = 10ms

10
80
60
40
20
0

0

50

100

150

1
Operation in this area
is limited by RDS(on)
(VGS = 10V)

0.1

0.01

200

Ta=25ºC
Single Pulse
Mounted on a cupper board.
(40mm × 40mm × 0.8mm)

0.1

Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width

1000

Ta=25ºC

1
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
bottom Single

0.1

0.01

0.001
0.0001

10

Rth(ch-a)=62.5ºC/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Mounted on a cupper board.
(40mm × 40mm × 0.8mm)

0.01

1

Ta=25ºC
Single Pulse

100

10

1
0.0001

100

Pulse Width : PW [s]

www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.

100

Fig.4 Single Pulse Maximum
Power dissipation

Peak Transient Power : P(W)

10

1

Drain - Source Voltage : VDS [V]

Junction Temperature : Tj [°C]

Normalized Transient Thermal Resistance : r(t)

PW = 1ms

100

Drain Current : ID [A]

Power Dissipation : PD/PD max. [%]

DC Operation

0.01

1

100

Pulse Width : PW [s]

4/10

2013.04 - Rev.A

Data Sheet

RF4E070BN
lElectrical characteristic curves

Fig.6 Typical Output Characteristics(II)

Fig.5 Typical Output Characteristics(I)
7

7
VGS= 10V
VGS= 4.5V

5

VGS= 4.0V

4
3

VGS= 3.0V

2
1
0

0.2

0.4

0.6

0.8

VGS= 4.5V
VGS= 4.0V

5

VGS= 3.0V

4
3
2
VGS= 2.5V

1

VGS= 2.5V
0

0

1

0

4

6

8

10

Fig.8 Typical Transfer Characteristics

Fig.7 Breakdown Voltage
vs. Junction Temperature

100

60

VDS= 10V
Pulsed

VGS = 0V
ID = 1mA
Pulsed

10

40

Drain Current : ID [A]

Drain - Source Breakdown Voltage : V(BR)DSS [V]

2

Drain - Source Voltage : VDS [V]

Drain - Source Voltage : VDS [V]

20

0

Ta=25ºC
Pulsed

VGS= 10V
6

Drain Current : ID [A]

Drain Current : ID [A]

6

Ta=25ºC
Pulsed

-50

0

50

100

0.1
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC

0.01

0.001

150

Junction Temperature : Tj [°C]

www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.

1

0

0.5

1

1.5

2

2.5

3

3.5

Gate - Source Voltage : VGS [V]

5/10

2013.04 - Rev.A

Data Sheet

RF4E070BN
lElectrical characteristic curves

Fig.9 Gate Threshold Voltage
vs. Junction Temperature

Fig.10 Transconductance vs. Drain Current
100

VDS = 10V
ID = 1mA
Pulsed

Transconductance : gfs [S]

Gate Threshold Voltage : VGS(th) [V]

3

2

1

0

-50

0

50

100

VDS= 10V
Pulsed

10

1

0.1

0.01
0.001

150

Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0.01

Junction Temperature : Tj [°C]

10

100

Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
60

1
0.8
0.6
0.4
0.2

-25

0

25

50

75

100

125

150

Static Drain - Source On-State Resistance
: RDS(on) [mW]

1.2

Drain Current Dissipation
: ID/ID max. (%)

1

Drain Current : ID [A]

Fig.11 Drain Current Derating Curve

0

0.1

50
ID = 7A
40

ID = 3.5A

30
20
10
0

0

2

4

6

8

10

Gate - Source Voltage : VGS [V]

Junction Temperature : Tj [ºC]

www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.

Ta=25ºC
Pulsed

6/10

2013.04 - Rev.A

Data Sheet

RF4E070BN
lElectrical characteristic curves

Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)

Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
50

VGS= 10V
Pulsed

Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC

10

1

0.1

1

10

Static Drain - Source On-State Resistance
: RDS(on) [mW]

Static Drain - Source On-State Resistance
: RDS(on) [mW]

100

Drain Current : ID [A]

45
40
35
30
25
20
15
10

VGS = 10V
ID = 7A
Pulsed

5
0

-50 -25

0

25

50

75

100 125 150

Junction Temperature : Tj [ºC]

Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Static Drain - Source On-State Resistance
: RDS(on) [mW]

100

Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC

10

1

VGS= 4.5V
Pulsed
0.1

1

10

Drain Current : ID [A]

www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.

7/10

2013.04 - Rev.A

Data Sheet

RF4E070BN
lElectrical characteristic curves

Fig.17 Switching Characteristics

Fig.16 Typical Capacitance
vs. Drain - Source Voltage

1000

10000

Ta=25ºC
VDD= 15V
VGS= 10V
RG=10W
Pulsed

tf

100

Coss
Crss

10

1

td(off)

Ciss

Switching Time : t [ns]

Capacitance : C [pF]

1000

Ta = 25ºC
f = 1MHz
VGS = 0V
0.01

100

td(on)

10

tr

0.1

1

10

1

100

0.01

0.1

1

10

100

Drain Current : ID [A]

Drain - Source Voltage : VDS [V]

Fig.19 Source Current
vs. Source Drain Voltage

Fig.18 Dynamic Input Characteristics

100

10

8

Source Current : IS [A]

Gate - Source Voltage : VGS [V]

VGS=0V
Pulsed

6

4
Ta=25ºC
VDD= 15V
ID= 7A
RG=10W
Pulsed

2

0

0

2

4

6

8

Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC

1

0.1

0.01

10

0

0.5

1

Source-Drain Voltage : VSD [V]

Total Gate Charge : Qg [nC]

www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.

10

8/10

2013.04 - Rev.A

Data Sheet

RF4E070BN
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit

Fig.1-2 Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.

9/10

2013.04 - Rev.A

Data Sheet

RF4E070BN
lDimensions (Unit : mm)
b

e
A1

Lp

E

Lp1

B

HUML2020L8(Single)

XM S A B

A

A

Lp2

D

b4

b3
b2
b1
b6

Seating plane

b9

l1

e1

S

l3

S

l2

y

b7
b8

b5

e

Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
DIM
A
A1
b
b1
b2
b3
b4
D
E
e
Lp
Lp1
Lp2
x
y
DIM
b5
b6
b7
b8
b9
e1
l1
l2
l3

MILIMETERS
MIN
MAX
0.55
0.65
0.00
0.05
0.25
0.35
1.55
1.75
0.95
1.05
0.175
0.20
0.30
1.90
2.10
1.90
2.10
0.65
0.225
0.325
1.05
1.15
0.75
0.85
0.10
0.10
MILIMETERS
MIN
MAX
0.45
1.75
1.05
0.175
0.30
1.725
0.425
1.15
0.85

MIN
0.022
0.000
0.010
0.061
0.037
0.008
0.075
0.075
0.009
0.041
0.030
MIN
-

INCHES

0.007

0.026

INCHES

0.007
0.068

MAX
0.026
0.002
0.014
0.069
0.041
0.012
0.083
0.083
0.013
0.045
0.033
0.004
0.004
MAX
0.018
0.069
0.041
0.012
0.017
0.045
0.033

Dimension in mm / inches

www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.

10/10

2013.04 - Rev.A

Notice

Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.

Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System
http://www.rohm.com/contact/

www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.

R1102A

www.s-manuals.com



Source Exif Data:
File Type                       : PDF
File Type Extension             : pdf
MIME Type                       : application/pdf
PDF Version                     : 1.5
Linearized                      : No
Tagged PDF                      : No
XMP Toolkit                     : Adobe XMP Core 4.0-c316 44.253921, Sun Oct 01 2006 17:14:39
Format                          : application/pdf
Creator                         : 
Title                           : RF4E070BN - Datasheet. www.s-manuals.com.
Subject                         : RF4E070BN - Datasheet. www.s-manuals.com.
Producer                        : Microsoft® Excel® 2010
Create Date                     : 2013:04:18 11:55:29+09:00
Creator Tool                    : Microsoft® Excel® 2010
Metadata Date                   : 2014:06:01 15:02:58+03:00
Modify Date                     : 2014:06:01 15:02:58+03:00
Document ID                     : uuid:a8fa56e4-4839-4cef-a200-450351bf8673
Instance ID                     : uuid:6b17f781-760e-486c-aedc-67bc82a8f44e
Page Count                      : 12
Page Layout                     : OneColumn
Language                        : ja-JP
Keywords                        : RF4E070BN, -, Datasheet., www.s-manuals.com.
Warning                         : [Minor] Ignored duplicate Info dictionary
EXIF Metadata provided by EXIF.tools

Navigation menu