RF4E070BN Datasheet. Www.s Manuals.com. Rohm

User Manual: Marking of electronic components, SMD Codes E0, E0*, E0**, E0-***, E00, E01, E02, E06***, E070BN. Datasheets BZX585-B15, DTDG14GP, DTDG23YP, NB2779A, RF4E070BN, RT9011-FQPQW, RT9011-SSPQWB, RT9167-15PB, SC4503WLTRT, TC1072-4.0VCH713.

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Datasheet

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RF4E070BN

Nch 30V 7A Power MOSFET

Junction temperature

150

°C

Range of storage temperature

Tstg

-55 to +150

°C

Power dissipation

Gate - Source voltage

VGSS

20

2.0

Continuous drain current

7

Pulsed drain current

ID,pulse

28

Drain - Source voltage

VDSS

Taping code

Marking

lAbsolute maximum ratings(Ta = 25°C) ,unless otherwise specified

Parameter

Symbol

Value

Unit

lPackaging specifications

Type

Packaging

Taping

lApplication

Reel size (mm)

180

DC/DC converters

Tape width (mm)

Load switch

Basic ordering unit (pcs)

3,000

lFeatures

lInner circuit

1) Low on - resistance.

2) High Power Small Mold Package (HUML2020L8).

3) Pb-free lead plating ; RoHS compliant

4) Halogen Free

5) 100% Rg and UIS Tested

lOutline

VDSS

30V

HUML2020L8

7A

2.0W

RDS(on) at 4.5V (Max.)

40.0mW

RDS(on) at 10V (Max.)

28.6mW

*1 BODY DIODE

(1) Drain

(2) Drain

(3) Gate

(4) Source

(5) Drain

(6) Drain

(7) Drain

(8) Source

(2)

(1)

(4)

(3)

(5)

(6)

(7)

(8)

(2)

(3)

(6)

(1)

(5)

(4)

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Data Sheet

RF4E070BN

*1 Limited only by maximum temperature allowed.

*2 Pw  10ms, Duty cycle  1%

*3 Mounted on a FR4 (40×40×0.8mm)

*4 Pulsed

Transconductance

gfs *4

VDS=5V, ID=7A

4.0

3.2

VGS=4.5V, ID=7A

28.6

30.8

40.0

Gate threshold voltage

VGS (th)

VGS = VDS, ID = 250mA

1.0

2.0

Gate - Source leakage current

IGSS

VGS = 20V, VDS = 0V

100

Zero gate voltage drain current

IDSS

VDS = 30V, VGS = 0V

Min.

Typ.

Max.

Drain - Source breakdown

voltage

V(BR)DSS

VGS = 0V, ID = 1mA

mV/°C

lThermal resistance

Parameter

Symbol

Values

Unit

Min.

Typ.

Max.

lElectrical characteristics(Ta = 25°C) ,unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

Breakdown voltage

temperature coefficient

ΔV(BR)DSS

ΔTj

ID=1mA

referenced to 25°C

mV/°C

Gate input resistannce

Gate threshold voltage

temperature coefficient

ΔV(GS)th

ΔTj

ID=1mA

referenced to 25°C

-2.1

Static drain - source

on - state resistance

RDS(on)

VGS=10V, ID=7A

22.0

f = 1MHz, open drain

Thermal resistance, junction - ambient

RthJA

62.5

°C/W

RthJC

°C/W

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Data Sheet

RF4E070BN

VGS = 0V, Is =1.67A

1.67

lGate Charge characteristics(Ta = 25C)

Parameter

Symbol

Conditions

Values

lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

1.2

Ta = 25°C

Forward voltage

VSD

Inverse diode continuous,

forward current

IS *1

Rise time

ID = 3.5A

Turn - off delay time

td(off)

RL = 4.29W

Fall time

RG = 10W

Ciss

VGS = 0V

Output capacitance

Coss

VDS = 15V

Turn - on delay time

td(on)

VDD ⋍ 15V, VGS = 10V

1.4

lElectrical characteristics(Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

410

Reverse transfer capacitance

Crss

f = 1MHz

Input capacitance

Unit

Min.

Typ.

Max.

Total gate charge

VDD ⋍ 15V, ID=7A

VGS = 10V

8.9

VDD ⋍ 15V, ID=7A

VGS = 4.5V

4.6

Gate - Source charge

Qgs

1.9

Gate - Drain charge

Qgd

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Data Sheet

RF4E070BN

lElectrical characteristic curves

100

1000

0.0001 0.01 1 100

Ta=25ºC

Single Pulse

0.01

0.1

100

0.1 1 10 100

Ta=25ºC

Single Pulse

Mounted on a cupper board.

(40mm × 40mm × 0.8mm)

Operation in this area

is limited by RDS(on)

(VGS = 10V)

PW = 100ms

PW = 1ms

PW = 10ms

DC Operation

100

120

050 100 150 200

0.001

0.01

0.1

0.0001 0.01 1 100

top D = 1

D = 0.5

D = 0.1

D = 0.05

D = 0.01

bottom Single

Ta=25ºC

Rth(ch-a)=62.5ºC/W

Rth(ch-a)(t)=r(t)×Rth(ch-a)

Mounted on a cupper board.

(40mm × 40mm × 0.8mm)

Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area

Power Dissipation : PD/PD max. [%]

Drain Current : ID [A]

Fig.3 Normalized Transient Thermal

Resistance vs. Pulse Width

Fig.4 Single Pulse Maximum

Power dissipation

Normalized Transient Thermal Resistance : r(t)

Pulse Width : PW [s] Pulse Width : PW [s]

Peak Transient Power : P(W)

Junction Temperature : Tj [°C] Drain - Source Voltage : VDS [V]

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Data Sheet

RF4E070BN

lElectrical characteristic curves

Drain Current : ID [A]

0 0.2 0.4 0.6 0.8 1

Ta=25ºC

Pulsed

VGS= 2.5V

VGS= 10V

VGS= 4.0V

VGS= 3.0V

VGS= 4.5V

-50 0 50 100 150

VGS = 0V

ID = 1mA

Pulsed

0.001

0.01

0.1

100

0 0.5 1 1.5 2 2.5 3 3.5

VDS= 10V

Pulsed

Ta= 125ºC

Ta= 75ºC

Ta= 25ºC

Ta= -25ºC

0 2 4 6 8 10

VGS= 2.5V

VGS= 10V

VGS= 4.0V

VGS= 3.0V

VGS= 4.5V

Fig.5 Typical Output Characteristics(I)

Drain Current : ID [A]

Drain - Source Voltage : VDS [V]

Fig.6 Typical Output Characteristics(II)

Drain Current : ID [A]

Drain - Source Voltage : VDS [V]

Fig.7 Breakdown Voltage

vs. Junction Temperature

Drain - Source Breakdown Voltage : V(BR)DSS [V]

Junction Temperature : Tj [°C]

Fig.8 Typical Transfer Characteristics

Gate - Source Voltage : VGS [V]

Ta=25ºC

Pulsed

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Data Sheet

RF4E070BN

lElectrical characteristic curves

-50 0 50 100 150

0.01

0.1

100

0.001 0.01 0.1 1 10 100

Ta= -25ºC

Ta=25ºC

Ta=75ºC

Ta=125ºC

VDS= 10V

Pulsed

0.2

0.4

0.6

0.8

1.2

-25 0 25 50 75 100 125 150

0 2 4 6 8 10

ID = 3.5A

ID = 7A

Ta=25ºC

Pulsed

Fig.9 Gate Threshold Voltage

vs. Junction Temperature

Gate Threshold Voltage : VGS(th) [V]

Junction Temperature : Tj [°C]

Fig.10 Transconductance vs. Drain Current

Transconductance : gfs [S]

Drain Current : ID [A]

Fig.11 Drain Current Derating Curve

Drain Current Dissipation

: ID/ID max. (%)

Junction Temperature : Tj [ºC]

Fig.12 Static Drain - Source On - State

Resistance vs. Gate Source Voltage

Static Drain - Source On-State Resistance

: RDS(on) [mW]

Gate - Source Voltage : VGS [V]

VDS = 10V

ID = 1mA

Pulsed

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Data Sheet

RF4E070BN

lElectrical characteristic curves

-50 -25 0 25 50 75 100 125 150

VGS = 10V

ID = 7A

Pulsed

100

0.1 1 10

Ta=125ºC

Ta=75ºC

Ta=25ºC

Ta= -25ºC

VGS= 10V

Pulsed

100

0.1 1 10

VGS= 4.5V

Pulsed

Ta=125ºC

Ta=75ºC

Ta=25ºC

Ta= -25ºC

Fig.13 Static Drain - Source On - State

Resistance vs. Drain Current(I)

Static Drain - Source On-State Resistance

: RDS(on) [mW]

Junction Temperature : Tj [ºC]

Fig.14 Static Drain - Source On - State

Resistance vs. Junction Temperature

Static Drain - Source On-State Resistance

: RDS(on) [mW]

Drain Current : ID [A]

Fig.15 Static Drain - Source On - State

Resistance vs. Drain Current(II)

Static Drain - Source On-State Resistance

: RDS(on) [mW]

Drain Current : ID [A]

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Data Sheet

RF4E070BN

lElectrical characteristic curves

100

1000

10000

0.01 0.1 1 10 100

Coss

Crss

Ciss

Ta = 25ºC

f = 1MHz

VGS = 0V

0246810

Ta=25ºC

VDD= 15V

ID= 7A

RG=10W

Pulsed

0.01

0.1

100

0 0.5 1

VGS=0V

Pulsed

Ta=125ºC

Ta=75ºC

Ta=25ºC

Ta= -25ºC

100

1000

0.01 0.1 1 10 100

td(on)

td(off)

Ta=25ºC

VDD= 15V

VGS= 10V

RG=10W

Pulsed

Fig.16 Typical Capacitance

vs. Drain - Source Voltage

Capacitance : C [pF]

Drain - Source Voltage : VDS [V]

Fig.17 Switching Characteristics

Switching Time : t [ns]

Drain Current : ID [A]

Fig.18 Dynamic Input Characteristics

Gate - Source Voltage : VGS [V]

Total Gate Charge : Qg [nC]

Fig.19 Source Current

vs. Source Drain Voltage

Source Current : IS [A]

Source-Drain Voltage : VSD [V]

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Data Sheet

RF4E070BN

lMeasurement circuits

Fig.1-1 Switching Time Measurement Circuit

Fig.1-2　Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

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Data Sheet

RF4E070BN

lDimensions (Unit : mm)

Dimension in mm / inches

HUML2020L8(Single)

Pattern of terminal position areas

[Not a recommended pattern of soldering pads]

MIN MAX MIN MAX

A 0.55 0.65 0.022 0.026

A1 0.00 0.05 0.000 0.002

b 0.25 0.35 0.010 0.014

b1 1.55 1.75 0.061 0.069

b2 0.95 1.05 0.037 0.041

b4 0.20 0.30 0.008 0.012

D 1.90 2.10 0.075 0.083

E 1.90 2.10 0.075 0.083

Lp 0.225 0.325 0.009 0.013

Lp1 1.05 1.15 0.041 0.045

Lp2 0.75 0.85 0.030 0.033

x- 0.10 - 0.004

y - 0.10 - 0.004

MIN MAX MIN MAX

b5 - 0.45 - 0.018

b6 - 1.75 - 0.069

b7 - 1.05 - 0.041

b9 - 0.30 - 0.012

l1 - 0.425 - 0.017

l2 - 1.15 - 0.045

l3 - 0.85 - 0.033

1.725

0.068

0.65

0.026

DIM

MILIMETERS

INCHES

0.175

0.007

DIM

MILIMETERS

INCHES

0.175

0.007

Seating plane

Lp2

Lp1

S A

X M B

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ROHM Customer Support System

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More detail product informations and catalogs are available, please contact us.

Notes

The information contained herein is subject to change without notice.

Before you use our Products, please contact our sales representative

and verify the latest specifica-

tions :

Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-

cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in

this document.

The Products specified in this document are not designed to be radiation tolerant.

For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, servers, solar cells, and power transmission systems.

Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

ROHM has used reasonable care to ensur the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

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When providing our Products and technologies contained in this document to other countries,

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