RJK03B9DPA Data Sheet Renesas
User Manual: Marking of electronic components, SMD Codes K0, K0-***, K01, K02, K0355, K0389, K0390, K0391, K0392, K0393, K0394, K0395, K0396, K0397, K03B7, K03B8, K03B9, K04, K06, K0=***. Datasheets BST86, EM6K6, QS5K2, QS6K1, RJK0355DPA, RJK0389DPA, RJK0390DPA, RJK0391DPA, RJK0392DPA, RJK0393DPA, RJK0394DPA, RJK0395DPA, RJK0396DPA, RJK0397DPA, RJK03B7DPA, RJK03B8DPA, RJK03B9DPA, RT9818C-29GVL, RT9818C-29PVL, US6K1, US6K2, US6K4.
Open the PDF directly: View PDF 
.
Page Count: 7
| Download | |
| Open PDF In Browser | View PDF |
Preliminary Datasheet RJK03B9DPA Silicon N Channel Power MOS FET Power Switching REJ03G1791-0320 Rev.3.20 May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 30 ±20 30 120 30 8 6.4 25 5 150 –55 to +150 Unit V V A A A A mJ W C/W C C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C REJ03G1791-0320 Rev.3.20 May 12, 2010 Page 1 of 6 RJK03B9DPA Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — Typ — — — — 8.3 10.9 65 1110 160 80 1.2 7.4 3.2 1.9 8.8 4 31 Max — ± 0.1 1 2.5 10.6 15.1 — — — — — — — — — — — Unit V A A V m m S pF pF pF nC nC nC ns ns ns — — — 4.8 0.88 13 — 1.15 — ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 15 A, VGS = 10 V Note4 ID = 15 A, VGS = 4.5 V Note4 ID = 15 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 30 A VGS = 10 V, ID = 15 A VDD 10 V RL = 0.67 Rg = 4.7 IF = 30 A, VGS = 0 Note4 IF =30 A, VGS = 0 diF/ dt = 100 A/ s Notes: 4. Pulse test REJ03G1791-0320 Rev.3.20 May 12, 2010 Page 2 of 6 RJK03B9DPA Preliminary Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 30 150 Tc = 25 °C 0.1 1 shot Pulse 0.1 1 200 Typical Output Characteristics Typical Transfer Characteristics 20 3.0V Drain Current ID (A) Pulse Test 2.8 V 12 2.6 V 8 4 16 VDS = 10 V Pulse Test 12 8 4 25°C Tc = 75°C VGS = 2.4 V 2 4 6 –25°C 8 1 2 3 5 4 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source On State Resistance vs. Drain Current 400 Pulse Test 300 200 ID = 20 A 100 10 A 5A 0 0 10 4 8 12 16 20 Gate to Source Voltage VGS (V) REJ03G1791-0320 Rev.3.20 May 12, 2010 Static Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (mV) 0 100 Drain to Source Voltage VDS (V) 4.5 V 10 V Drain Current ID (A) 10 Case Temperature Tc (°C) 20 16 n 100 tio 50 Operation in 1 this area is limited by RDS(on) era 0 1 ms PW = 10 ms Op 10 10 μs s 0μ 20 10 100 DC Drain Current ID (A) 1000 10 Channel Dissipation Pch (W) 40 100 Pulse Test 30 VGS = 4.5 V 10 10 V 3 1 1 3 10 30 100 300 1000 Drain Current ID (A) Page 3 of 6 Preliminary Static Drain to Source On State Resistance vs. Temperature Typical Capacitance vs. Drain to Source Voltage 20 10000 Pulse Test 3000 Capacitance C (pF) ID = 5 A, 10 A, 20 A 16 12 VGS = 4.5 V 8 5 A, 10 A, 20 A 10 V 4 50 0 25 50 75 Crss VGS = 0 f = 1 MHz 10 20 30 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Reverse Drain Current vs. Source to Drain Voltage 20 VGS 16 VDD = 25 V 10 V 30 12 VDS 20 8 10 4 VDD = 25 V 10 V 0 0 Coss 100 Case Temperature Tc (°C) ID = 30 A 40 300 10 0 100 125 150 8 16 24 0 40 32 Gate Charge Qg (nc) 50 Reverse Drain Current IDR (A) 0 –25 Ciss 1000 30 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Static Drain to Source On State Resistance RDS(on) (mΩ) RJK03B9DPA Pulse Test 10 V 40 5V 30 20 VGS = 0, –5 V 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating 10 IAP = 8 A VDD = 15 V duty < 0.1% Rg ≥ 50 Ω 8 6 4 2 0 25 50 75 100 125 150 Channel Temperature Tch (°C) REJ03G1791-0320 Rev.3.20 May 12, 2010 Page 4 of 6 RJK03B9DPA Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1 D=1 0.5 0.3 0.2 0.1 0.05 2 0.0 e 1 uls 0.0 t p ho 1s 0.1 0.03 θch – c(t) = γs (t) • θch – c θch – c = 5.0°C/W, Tc = 25°C PDM D= PW T PW T 0.01 1m 10 m 100 m 1 10 Pulse Width PW (S) Avalanche Test Circuit Avalanche Waveform EAR = L VDS Monitor 1 L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDS VDD D. U. T ID Vin 15 V 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% VDS = 10 V 90% td(on) REJ03G1791-0320 Rev.3.20 May 12, 2010 10% tr 90% td(off) tf Page 5 of 6 RJK03B9DPA Preliminary Package Dimensions JEITA Package Code ⎯ RENESAS Code PWSN0008DC-A Previous Code WPAK(2)V MASS[Typ.] 0.07g 0.8Max 5.1 ± 0.2 Unit: mm 0.5 ± 0.15 Package Name WPAK(2) 4.21Typ 1.27Typ +0.1 -0.2 5.9 3.6 ± 0.2 +0.1 -0.3 6.1 3.9 ± 0.2 0.05Max 0Min Stand-off 1.27Typ 0.2Typ 0.5 ± 0.15 0.545Typ 0.7Typ 0.04Min 0.4 ± 0.06 4.90 ± 0.1 (Ni/Pd/Au plating) Notice:The reverse pattern of die-pad support lead described above exists. Ordering Information Part No. RJK03B9DPA-00-J53 Quantity 3000 pcs REJ03G1791-0320 Rev.3.20 May 12, 2010 Shipping Container Taping Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. 4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 7F, No. 363 Fu Shing North Road Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2010 Renesas Electronics Corporation. All rights reserved. Colophon 1.0
Source Exif Data:
File Type : PDF File Type Extension : pdf MIME Type : application/pdf PDF Version : 1.4 Linearized : Yes Encryption : Standard V1.2 (40-bit) User Access : Print, Copy, Annotate, Fill forms, Extract, Assemble, Print high-res XMP Toolkit : Adobe XMP Core 4.2.1-c043 52.372728, 2009/01/18-15:08:04 Create Date : 2010:05:12 14:11:51+09:00 Modify Date : 2010:05:12 16:10:10+09:00 Creator Tool : Acrobat PDFMaker 9.1 for Word Metadata Date : 2010:05:12 16:10:10+09:00 Producer : Acrobat Distiller 9.3.2 (Windows) Format : application/pdf Creator : Renesas Electronic Corporation Title : RJK03B9DPA Data Sheet Description : REJ03G1791-0320 Document ID : uuid:68990e6c-64b7-44a6-a0b0-7df792700b35 Instance ID : uuid:a4d298bc-41f6-47f7-95a9-bfde96060493 Page Layout : SinglePage Page Count : 7 Author : Renesas Electronic Corporation Subject : REJ03G1791-0320EXIF Metadata provided by EXIF.tools