RJK03B9DPA Data Sheet Renesas

User Manual: Marking of electronic components, SMD Codes K0, K0-***, K01, K02, K0355, K0389, K0390, K0391, K0392, K0393, K0394, K0395, K0396, K0397, K03B7, K03B8, K03B9, K04, K06, K0=***. Datasheets BST86, EM6K6, QS5K2, QS6K1, RJK0355DPA, RJK0389DPA, RJK0390DPA, RJK0391DPA, RJK0392DPA, RJK0393DPA, RJK0394DPA, RJK0395DPA, RJK0396DPA, RJK0397DPA, RJK03B7DPA, RJK03B8DPA, RJK03B9DPA, RT9818C-29GVL, RT9818C-29PVL, US6K1, US6K2, US6K4.

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REJ03G1791-0320 Rev.3.20 Page 1 of 6

May 12, 2010

Preliminary Datasheet

RJK03B9DPA

Silicon N Channel Power MOS FET

Power Switching

Features

 High speed switching

 Capable of 4.5 V gate drive

 Low drive current

 High density mounting

 Low on-resistance

RDS(on) = 8.3 m typ. (at VGS = 10 V)

 Pb-free

 Halogen-free

Outline

RENESAS Package code: PWSN0008DC-A

(Package name: WPAK(2))

G

D

SSS

DDD

4

123

5678

1, 2, 3 Source

4 Gate

5, 6, 7, 8 Drain

876

5

21

34

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage VDSS 30 V

Gate to source voltage VGSS ±20 V

Drain current ID 30 A

Drain peak current ID(pulse)Note1 120 A

Body-drain diode reverse drain current IDR 30 A

Avalanche current IAP Note 2 8 A

Avalanche energy EAR Note 2 6.4 mJ

Channel dissipation Pch Note3 25 W

Channel to case thermal impedance ch-c Note3 5 C/W

Channel temperature Tch 150 C

Storage temperature Tstg –55 to +150 C

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tch = 25C, Rg  50 

3. Tc = 25C

REJ03G1791-0320

Rev.3.20

May 12, 2010

RJK03B9DPA Preliminary

REJ03G1791-0320 Rev.3.20 Page 2 of 6

May 12, 2010

Electrical Characteristics

(Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0

Gate to source leak current IGSS — — ± 0.1 A VGS = ±20 V, VDS = 0

Zero gate voltage drain current IDSS — — 1 A VDS = 30 V, VGS = 0

Gate to source cutoff voltage VGS(off) 1.2 — 2.5 V VDS = 10 V, I D = 1 mA

RDS(on) — 8.3 10.6 m I

D = 15 A, VGS = 10 V Note4

Static drain to source on state

resistance RDS(on) — 10.9 15.1 m I

D = 15 A, VGS = 4.5 V Note4

Forward transfer admittance |yfs| — 65 — S ID = 15 A, VDS = 10 V Note4

Input capacitance Ciss — 1110 — pF

Output capacitance Coss — 160 — pF

Reverse transfer capacitance Crss — 80 — pF

VDS = 10 V

VGS = 0

f = 1 MHz

Gate Resistance Rg — 1.2 — 

Total gate charge Qg — 7.4 — nC

Gate to source charge Qgs — 3.2 — nC

Gate to drain charge Qgd — 1.9 — nC

VDD = 10 V

VGS = 4.5 V

ID = 30 A

Turn-on delay time td(on) — 8.8 — ns

Rise time tr — 4 — ns

Turn-off delay time td(off) — 31 — ns

Fall time tf — 4.8 — ns

VGS = 10 V, ID = 15 A

VDD  10 V

RL = 0.67 

Rg = 4.7 

Body–drain diode forward voltage VDF — 0.88 1.15 V IF = 30 A, VGS = 0 Note4

Body–drain diode reverse recovery

time

trr — 13 — ns

IF =30 A, VGS = 0

diF/ dt = 100 A/ s

Notes: 4. Pulse test

RJK03B9DPA Preliminary

REJ03G1791-0320 Rev.3.20 Page 3 of 6

May 12, 2010

Main Characteristics

100

0246810

20

16

12

8

4

012 345

10

3

1

30 3001 10 100 1000

3

400

300

200

04 8 12 16 20

10 A

100

30

10 V

5 A

40

30

20

10

050 100 150 200 0.1 1 10 100

10

100

1000

1

0.1

DC Operation

PW = 10 ms

1 ms

2.6 V

2.8 V

3.0V

10 V

4.5 V

20

16

12

8

4

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V

DS

(V)

Drain Current ID (A)

Maximum Safe Operation Area

10 μs

100 μs

Tc = 25 °C

1 shot Pulse

Operation in

this area is

limited by R

DS(on)

Gate to Source Voltage V

GS

(V)

Drain to Source Voltage V

DS

(V)

Drain Current ID (A)

Typical Output Characteristics

Drain Current ID (A)

Typical Transfer Characteristics

V

DS

= 10 V

Pulse Test

Pulse Test

V

GS

= 2.4 V

Tc = 75°C

25°C

–25°C

Gate to Source Voltage V

GS

(V)

Drain to Source Saturation Voltage

V

DS(on)

(mV)

Static Drain to Source On State Resistance

R

DS(on)

(mΩ)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Drain Current I

D

(A)

Static Drain to Source On State Resistance

vs. Drain Current

Pulse Test Pulse Test

I

D

= 20 A

V

GS

= 4.5 V

RJK03B9DPA Preliminary

REJ03G1791-0320 Rev.3.20 Page 4 of 6

May 12, 2010

20

8

4

–25 0 25 50 75 100 125 150

0

10 V

25 50 75 100 125 150

00.4 0.8 1.2 1.6 2.0

010 3020

10000

3000

1000

300

100

30

10

V

GS

= 0

f = 1 MHz

Crss

Coss

Ciss

50

40

30

20

10

0

20

16

12

8

4

816243240

00

12

16

10

8

6

4

2

0

50

40

30

20

10

5 V

10 V

Case Temperature Tc (°C)

Static Drain to Source On State Resistance

vs. Temperature

Capacitance C (pF)

Drain to Source Voltage V

DS

(V)

Typical Capacitance vs.

Drain to Source Voltage

Static Drain to Source On State Resistance

R

DS(on)

(mΩ)

Pulse Test

I

D

= 5 A, 10 A, 20 A

5 A, 10 A, 20 A

V

GS

= 4.5 V

Gate Charge Qg (nc)

Drain to Source Voltage V

DS

(V)

Gate to Source Voltage V

GS

(V)

Dynamic Input Characteristics

Source to Drain Voltage V

SD

(V)

Reverse Drain Current I

DR

(A)

Reverse Drain Current vs.

Source to Drain Voltage

I

D

= 30 A

V

GS

V

DS

V

DD

= 25 V

10 V

V

DD

= 25 V

10 V

Pulse Test

V

GS

= 0, –5 V

Channel Temperature Tch (°C)

Repetitive Avalanche Energy E

AR

(mJ)

Maximum Avalanche Energy vs.

Channel Temperature Derating

I

AP

= 8 A

V

DD

= 15 V

duty < 0.1%

Rg ≥ 50 Ω

RJK03B9DPA Preliminary

REJ03G1791-0320 Rev.3.20 Page 5 of 6

May 12, 2010

D. U. T

Rg

IAP

Monitor

VDS

Monitor

VDD

Vin

15 V

0

I

D

VDS

IAP

V(BR)DSS

L

VDD

EAR = L • IAP2 •

2

1VDSS

VDSS – VDD

Vin Monitor

D.U.T.

Vin

10 V

RL

VDS

= 10 V

tr

td(on)

Vin

90% 90%

10%

10%

Vout

td(off)

Vout

Monitor 90%

10%

tf

Rg

3

1

0.3

0.1

0.03

0.01 1 m 10 m 100 m 1 10

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

DM

P

PW

T

D = PW

T

θch – c(t) = γs (t) • θch – c

θch – c = 5.0°C/W, Tc = 25°C

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width

Normalized Transient Thermal Impedance γs (t)

Avalanche Test Circuit Avalanche Waveform

Switching Time Test Circuit Switching Time Waveform

RJK03B9DPA Preliminary

REJ03G1791-0320 Rev.3.20 Page 6 of 6

May 12, 2010

Package Dimensions

4.21Typ

5.9

0.2Typ

0.8Max

6.1

1.27Typ

0.7Typ

0.04Min

+0.1

-0.2

+0.1

-0.3

1.27Typ

0.05Max

0Min

0.545Typ

Stand-off

5.1 ± 0.2

4.90 ± 0.1

0.5 ± 0.15 3.6 ± 0.2 0.5 ± 0.15

0.4 ± 0.06

3.9 ± 0.2

⎯PWSN0008DC-A WPAK(2)V 0.07g

MASS[Typ.]RENESAS CodeJEITA Package Code Previous Code

(Ni/Pd/Au plating)

Notice:The reverse pattern of die-pad

support lead described above exists.

Unit: mm

Package Name

WPAK(2)

Ordering Information

Part No. Quantity Shipping Container

RJK03B9DPA-00-J53 3000 pcs Taping

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