S8050 Datasheet. Www.s Manuals.com. Galaxy

User Manual: Marking of electronic components, SMD Codes J3, J3-, J3-***, J3=***, J3A, J3B, J3S, J3Y. Datasheets MMSZ5248, RT9166A-25PX, RT9167A-18GB, RT9167A-18PB, RT9818E-19PV, S8050, S9013, S9013W, ZC831, ZC831A, ZC831B.

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BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Transistor
FEATURES

S8050

Pb

z

High Collector Current.(IC= 500mA).

z

Complementary To S8550.

z

Excellent HFE Linearity.

z

High total power dissipation.(PC=300mW)

Lead-free

APPLICATIONS
z

High Collector Current.
SOT-23

ORDERING INFORMATION
Type No.

Marking

Package Code

S8050

J3Y

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

500

mA

PC

Collector Dissipation

300

mW

Tj,Tstg

Junction and Storage Temperature

-55~150

℃

Document number: BL/SSSTC079
Rev.A

www.galaxycn.com
1

BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Transistor

S8050

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter

Symbol

Test conditions

MIN

Collector-base breakdown voltage

V(BR)CBO

IC=100μA,IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=0.1mA,IB=0

25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA,IC=0

5

V

Collector cut-off current

ICBO

VCB=40V,IE=0

0.1

μA

Collector cut-off current

ICEO

VCE=20V,IB=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

DC current gain

hFE

VCE=1V,IC=50mA
VCE=1V,IC=500mA

Collector-emitter saturation voltage

VCE(sat)

IC=500mA, IB= 50mA

0.6

V

Base-emitter saturation voltage

VBE(sat)

IC=500mA, IB= 50mA

1.2

V

Transition frequency

fT

VCE=6V, IC= 20mA
f=30MHz

120
50

150

TYP

MAX

UNIT

350

MHz

CLASSIFICATION OF hFE(1)
Rank

L

H

Range

120-200

200-350

Document number: BL/SSSTC079
Rev.A

www.galaxycn.com
2

BL Galaxy Electrical
Silicon Epitaxial Planar Transistor

Production specification

S8050

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTC079
Rev.A

www.galaxycn.com
3

BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Transistor

S8050

PACKAGE OUTLINE
Plastic surface mounted package

SOT-23

SOT-23
Dim

Min

Max

A

2.85

2.95

B

1.25

1.35

C

1.0Typical

D

0.37

0.43

E

0.35

0.48

G

1.85

1.95

H

0.02

0.1

J
K

0.1Typical
2.35

2.45

All Dimensions in mm

SOLDERING FOOTPRINT

Unit : mm

PACKAGE

INFORMATION

Device

Package

Shipping

S8050

SOT-23

3000/Tape&Reel

Document number: BL/SSSTC079
Rev.A

www.galaxycn.com
4

www.s-manuals.com



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