S8050 Datasheet. Www.s Manuals.com. Galaxy
User Manual: Marking of electronic components, SMD Codes J3, J3-, J3-***, J3=***, J3A, J3B, J3S, J3Y. Datasheets MMSZ5248, RT9166A-25PX, RT9167A-18GB, RT9167A-18PB, RT9818E-19PV, S8050, S9013, S9013W, ZC831, ZC831A, ZC831B.
Open the PDF directly: View PDF 
.
Page Count: 5
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor S8050
Document number: BL/SSSTC079 www.galaxycn.com
Rev.A 1
FEATURES
z High Collector Current.(IC= 500mA).
z Complementary To S8550.
z Excellent HFE Linearity.
z High total power dissipation.(PC=300mW)
APPLICATIONS
z High Collector Current.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
S8050 J3Y SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 500 mA
PC Collector Dissipation 300 mW
Tj,Tstg Junction and Storage Temperature -55~150 ℃
Pb
Lead-free
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor S8050
Document number: BL/SSSTC079 www.galaxycn.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO I
C=0.1mA,IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO I
E=100μA,IC=0 5 V
Collector cut-off current ICBO VCB=40V,IE=0 0.1 μA
Collector cut-off current ICEO VCE=20V,IB=0 0.1 μA
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA
DC current gain hFE
VCE=1V,IC=50mA
VCE=1V,IC=500mA
120
50 350
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB= 50mA 0.6 V
Base-emitter saturation voltage VBE(sat) I
C=500mA, IB= 50mA 1.2 V
Transition frequency fT
VCE=6V, IC= 20mA
f=30MHz 150 MHz
CLASSIFICATION OF hFE(1)
Rank L H
Range 120-200 200-350
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor S8050
Document number: BL/SSSTC079 www.galaxycn.com
Rev.A 3
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor S8050
Document number: BL/SSSTC079 www.galaxycn.com
Rev.A 4
PACKAGE OUTLINE
Plastic surface mounted package SOT-23
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
SOT-23
Dim Min Max
A 2.85 2.95
B 1.25 1.35
C 1.0Typical
D 0.37 0.43
E 0.35 0.48
G 1.85 1.95
H 0.02 0.1
J 0.1Typical
K 2.35 2.45
All Dimensions in mm
Device Package Shipping
S8050 SOT-23 3000/Tape&Reel
