SDBN500B01 Datasheet. Www.s Manuals.com. R3 2 Diodes

User Manual: Marking of electronic components, SMD Codes RD, RD**, RD-, RD07, RDW, RDp, RDt, Rd. Datasheets BD53E46G, BZB84-B47, RP130K151A, SDBN500B01, Si1551DL.

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NEW PRODUCT

SDBN500B01
500mA NPN TRANSISTOR SWITCH WITH SNUBBER DIODE
Please click here to visit our online spice models database.

General Description
•

SDBN500B01 is best suited for switching inductive loads
in power switching applications. It improves efficiency
and reliability of power switching systems and it can
support continuous maximum current of 500 mA. It
features NPN transistor with high breakdown voltage
and discrete switching diode with high forward surge
current. It reduces component count, consumes less
space and minimizes parasitic losses. The component
devices can be used as a part of a circuit or as a stand
alone discrete device.

6
5
4
1
2
3
SOT-363

Features
•
•
•
•
•
•

NPN Transistor with High Break-Down Voltage
Switching Diode with High Forward Surge
Low Switching and Conduction Losses
Surface Mount Package Suited for Automated Assembly
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)

CD1

BQ1

EQ1

6

5

4

Q1

D1

Mechanical Data
•
•
•
•
•
•
•
•

Case: SOT-363
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Figure
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking and Type Code Information: See Page 6
Ordering Information: See Page 6
Weight: 0.016 grams (approximate)

Maximum Ratings: Total Device

1

2

3

AD1

NC

CQ1

Schematic and Pin Configuration

Sub-Component P/N

Reference

Device Type

MMBTA06_DIE

Q1

NPN Transistor

BAS31_DIE

D1

Switching Diode

@TA = 25°C unless otherwise specified

Characteristic
Power Dissipation (Note 3)
Power Derating Factor above 25°C
Output Current

Symbol
Pd
Pder
Iout

Value
200
1.6
500

Unit
mW
mW / °C
mA

Thermal Characteristics
Characteristic
Junction Operating and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note 3)
(Equivalent to One Heated Junction of NPN Transistor)
Notes:

Symbol

Value

Unit

Tj, TSTG

-55 to +150

°C

RθJA

625

°C/W

1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1" x 0.85" x 0.062"; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

DS30835 Rev. 3 - 2

1 of 6
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SDBN500B01
© Diodes Incorporated

NEW PRODUCT

Maximum Ratings:
Sub-Component Device – Switching Diode (D1)
Characteristic
Non-Repetitive Peak Reverse Voltage

@TA = 25°C unless otherwise specified

Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Page 1: Note 3)
Average Rectified Output Current (Page 1: Note 3)
Non-Repetitive Peak Forward Surge Current
@ t = 1.0 us
@ t = 1.0 s

IFSM

Sub Component Device - Discrete NPN Transistor (Q1)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Output Current - continuous (Page 1: Note 3)

Symbol
VCBO
VCEO
VEBO
IC

Value
100

Unit
V

75

V

53
500
250
4
2

V
mA
mA
A
A

@TA = 25°C unless otherwise specified
Value
80
80
4
500

Unit
V
V
V
mA

Electrical Characteristics:
Switching Diode (D1) @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 4)
Forward Voltage Drop (Note 4)

Symbol
V(BR)R
VFM

Reverse Current (Note 4)

IR

Total Capacitance
Reverse Recovery Time

CT
trr

Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯

Max
⎯
0.37
0.855
1
1.25
2.5
50
30
25
4
4

Unit
V
V

μA
pF
ns

Test Condition
IR = 10 μA
IF = 5 mA
IF = 10 mA
IF = 100 mA
IF = 150 mA
VR = 75V
VR = 75V, Tj = 150 °C
VR = 25V, Tj = 150 °C
VR = 20V
VR = 0V, f = 1.0 MHz
IF = IR = 10mA, Irr = 0.1xIR, RL = 100 Ω

4. Short duration pulse test used to minimize self-heating effect.

NEW PRODUCT

Notes:

Min
75
0.62
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯

DS30835 Rev. 3 - 2

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SDBN500B01
© Diodes Incorporated

Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current (IBEX)
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current, IO(OFF)
Emitter-Base Cut Off Current
ON CHARACTERISTICS (Note 4)

DC Current Gain

@TA = 25°C unless otherwise specified
Symbol

Min

Max

Unit

VBR(CBO)
VBR(CEO)
V(BR)EBO
ICEX
IBL
ICBO
ICEO
IEBO

80
80
4
⎯
⎯
⎯
⎯
⎯

⎯
⎯
⎯
100
100
100
100
100

V
V
V
nA
nA
nA
nA
nA

IC = 10 μA, IE = 0
IC = 1.0 mA, IB = 0
IE = 100 μA, IC = 0
VCE = 60V, VEB(OFF) = 3.0V
VCE = 60V, VEB(OFF) = 3.0V
VCB = 80V, IE = 0
VCE = 80V, IB = 0
VEB = 5V, IC = 0

60
80
100
100
90
80
⎯
⎯
⎯
⎯
⎯
⎯

⎯
⎯
⎯
⎯
⎯
⎯
0.1
0.25
0.35
0.98
0.95
1.2

⎯
⎯
⎯
⎯
⎯
⎯
V
V
V
V
V
V

VCE = 1V, IC = 100 μA
VCE = 1V, IC = 1 mA
VCE = 1V, IC = 10 mA
VCE = 1V, IC = 50 mA
VCE = 1V, IC = 100 mA
VCE = 1V, IC = 200 mA
IC = 10 mA, IB = 1 mA
IC = 100 mA, IB = 10 mA
IC = 200 mA, IB = 20 mA
VCE = 5V, IC = 2 mA
IC = 10 mA, IB = 1 mA
IC = 100 mA, VCE = 1V

COBO
CIBO
fT

⎯
⎯
100

4
6
⎯

pF
pF
MHz

td
tr

⎯
⎯

35
35

ns
ns

hFE

Collector-Emitter Saturation Voltage

VCE(SAT)

Base-Emitter Turn-on Voltage

VBE(ON)

Base-Emitter Saturation Voltage

VBE(SAT)

SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time

Test Condition

VCB = 5.0 V, f = 1.0MHz, IE = 0
VEB = 5.0 V, f = 1.0MHz, IC = 0
VCE = 2 V, IC = 10mA, f = 100MHz
VCC = 3.0 V, IC = 10mA,
VBE(OFF) = 0.5V, IB1 = 1.0mA

Pulse Test: Pulse width, tp<300uS, Duty Cycle, d<=2%
Notes:

4. Short duration pulse test used to minimize self-heating effect.

Typical Characteristics
250

PD, POWER DISSIPATION (mW)

NEW PRODUCT

Discrete NPN Transistor (Q1)

200

150

100

50
R θJA = 625°C/W

0
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Maximum Power Dissipation vs.
Ambient Temperature

DS30835 Rev. 3 - 2

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SDBN500B01
© Diodes Incorporated

IR, INSTANTANEOUS REVERSE CURRENT (nA)

IF, INSTANTANEOUS FORWARD CURRENT (mA)

10,000

1,000

100

10

1

TA = 125ºC

1,000

TA = 75ºC

100

TA = 0ºC

1

TA = -40ºC

0.1

0.1

0

20

40

60

80

100

VR, REVERSE VOLTAGE (V)
Fig. 3, Typical Reverse Characteristics

3

10
ICBO, COLLECTOR-BASE CURRENT (nA)

f = 1MHz

CT, TOTAL CAPACITANCE (pF)

TA = 25ºC

10

0.4
0.8
1.2
1.6
0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2, Typical Forward Characteristics

2.5

2

1.5

1

0.5

0

VCB = 80V

1

0.1

0.01

0

30
20
40
50
VR, REVERSE VOLTAGE (V)
Fig. 4, Typical Capacitance vs. Reverse Voltage
10

25

50
75
100
TA, AMBIENT TEMPERATURE (ºC)
Fig. 5, ICBO vs TA

125

0.500

1.8

VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)

2.0
VCE, COLLECTOR EMITTER VOLTAGE (V)

NEW PRODUCT

Switching Diode (D1) Characteristics

IC = 30mA

1.6
1.4
IC = 1mA

IC = 10mA

1.2
1.0
IC = 100mA

0.8
0.6
0.4

DS30835 Rev. 3 - 2

0.400
0.350
0.300
TA = 25°C

0.250
T A = 150°C

0.200
0.150
0.100
0.050

0.2
0
0.001

IC
IB = 10

0.450

TA = -50°C

0

0.01

0.1
1
10
IB, BASE CURRENT (mA)
Fig. 6, VCE vs IB

1

100

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10
100
IC, COLLECTOR CURRENT (mA)
Fig. 7, VCE(SAT) vs IC

1,000

SDBN500B01
© Diodes Incorporated

VBE(ON), BASE EMITTER VOLTAGE (V)

hFE, DC CURRENT GAIN

1.0

1,000

100

10

1
1

10
100
IC, COLLECTOR CURRENT (mA)
Fig. 8, hFE vs IC

0.9

VCE = 5V

0.8
TA = -50°C

0.7
TA = 25°C

0.6
0.5
0.4

T A = 150°C

0.3
0.2
0.1
0.1

1,000

1
10
IC, COLLECTOR CURRENT (mA)
Fig. 9, VBE(ON) vs IC

100

1,000
fT, GAIN BANDWIDTH PRODUCT (MHz)

NEW PRODUCT

10,000

100

10

1
1

10
IC, COLLECTOR CURRENT (mA)
Fig. 10, fT vs IC

Application Details:
V supply

NPN transistor (MMBTA06) and Switching diode (BAV70) integrated as
one in SDBN500B01 can be used as a discrete entity for general
applications or part of a circuit to function as low side switch for sinking
current. NPN is selected based on high break-down voltage and
maximum collector current range. Switching diode is selected based
on instantaneous forward surge current. The Switching diode
dissipates very little power because it is on for only a small portion of
the switching cycle. It is designed to replace the discrete NPN
transistor and a Switching diode in two separate packages into one
small package as shown in Figure. It consumes less board space and
also helps to minimize conduction or switching losses due to parasitic
inductances (e.g. PCB traces) in power switch applications. (Please
see Fig. 11 for one example of typical application circuit used in
conjunction with DC-DC converter as a part of the power management
system).

Inductive Load

SDBN500B01
R1

R2

Fig. 11, Typical Application Circuit
DS30835 Rev. 3 - 2

5 of 6
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SDBN500B01
© Diodes Incorporated

Marking Code
RD07

Device
SDBN500B01-7
Notes:

5.

Packaging
SOT-363

Shipping
3000/Tape & Reel

For packaging details, please see below or go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

RD07
Date Code Key
Year

2006
T

Code

RD07 = Product Type Marking Code,
YM = Date Code Marking
Y = Year e.g. T = 2006
M = Month e.g. 9 = September

YM

NEW PRODUCT

Ordering Information (Note 5)

2007
U

2008
V

2009
W

2010
X

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Code

1

2

3

4

5

6

7

Aug
8

2011
Y
Sep
9

Oct
O

2012
Z
Nov
N

Dec
D

Mechanical Details
A

SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
–
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
0°
8°
α
All Dimensions in mm

B C

H
K

M

J

F

D

L

Suggested Pad Layout: (Based on IPC-SM-782)
E

Z

E

C

G

Y

Dimensions
Value
Z
2.5
G
1.3
X
0.42
Y
0.6
C
1.9
E
0.65
All Dimensions in mm

X

MPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30835 Rev. 3 - 2

6 of 6
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SDBN500B01
© Diodes Incorporated

www.s-manuals.com



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Subject                         : SDBN500B01 - Datasheet. www.s-manuals.com.
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