SDBN500B01 Datasheet. Www.s Manuals.com. R3 2 Diodes

User Manual: Marking of electronic components, SMD Codes RD, RD**, RD-, RD07, RDW, RDp, RDt, Rd. Datasheets BD53E46G, BZB84-B47, RP130K151A, SDBN500B01, Si1551DL.

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SDBN500B01

500mA NPN TRANSISTOR SWITCH WITH SNUBBER DIODE

NEW PRODUCT

General Description

• SDBN500B01 is best suited for switching inductive loads

in power switching applications. It improves efficiency

and reliability of power switching systems and it can

support continuous maximum current of 500 mA. It

features NPN transistor with high breakdown voltage

and discrete switching diode with high forward surge

current. It reduces component count, consumes less

space and minimizes parasitic losses. The component

devices can be used as a part of a circuit or as a stand

alone discrete device.

Features

• NPN Transistor with High Break-Down Voltage

• Switching Diode with High Forward Surge

• Low Switching and Conduction Losses

• Surface Mount Package Suited for Automated Assembly

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

Mechanical Data

• Case: SOT-363

• Case Material: Molded Plastic, "Green" Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminal Connections: See Figure

• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Marking and Type Code Information: See Page 6

• Ordering Information: See Page 6

• Weight: 0.016 grams (approximate)

Sub-Component P/N Reference Device Type

MMBTA06_DIE Q1 NPN Transistor

BAS31_DIE D1 Switching Diode

SOT-363

1

2

3

4

5

6

4

EQ1

BQ1

3

6

CD1

D1

1

AD1 NC CQ1

Q1

5

2

Schematic and Pin Configuration

Maximum Ratings: Total Device @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 3) Pd200 mW

Power Derating Factor above 25°C Pder 1.6 mW / °C

Output Current Iout 500 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Junction Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C

Thermal Resistance, Junction to Ambient Air (Note 3)

(Equivalent to One Heated Junction of NPN Transistor) RθJA 625 °C/W

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, 1" x 0.85" x 0.062"; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

DS30835 Rev. 3 - 2 1 of 6

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Maximum Ratings:

NEW PRODUCT

Sub-Component Device – Switching Diode (D1) @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Non-Repetitive Peak Reverse Voltage VRM 100 V

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

75 V

RMS Reverse Voltage VR(RMS) 53 V

Forward Continuous Current (Page 1: Note 3) IFM 500 mA

Average Rectified Output Current (Page 1: Note 3) IO250 mA

Non-Repetitive Peak Forward Surge Current @ t = 1.0 us 4 A

@ t = 1.0 s

IFSM 2 A

Sub Component Device - Discrete NPN Transistor (Q1) @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage VCBO 80 V

Collector-Emitter Voltage VCEO 80 V

Emitter-Base Voltage VEBO 4 V

Output Current - continuous (Page 1: Note 3) IC500 mA

Electrical Characteristics:

Switching Diode (D1) @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Reverse Breakdown Voltage (Note 4) V(BR)R 75 ⎯ ⎯ V IR = 10 μA

0.62 ⎯ 0.37 IF = 5 mA

⎯ ⎯ 0.855 IF = 10 mA

⎯ ⎯ 1 IF = 100 mA

Forward Voltage Drop (Note 4) VFM

⎯ ⎯ 1.25

V

IF = 150 mA

⎯ ⎯ 2.5 VR = 75V

⎯ ⎯ 50 VR = 75V, Tj = 150 °C

⎯ ⎯ 30 VR = 25V, Tj = 150 °C

Reverse Current (Note 4) IR

⎯ ⎯ 25

μA

VR = 20V

Total Capacitance CT⎯ ⎯ 4 pF VR = 0V, f = 1.0 MHz

Reverse Recovery Time trr ⎯ ⎯ 4 ns IF = IR = 10mA, Irr = 0.1xIR, RL = 100 Ω

Notes: 4. Short duration pulse test used to minimize self-heating effect.

NEW PRODUCT

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Discrete NPN Transistor (Q1) @TA = 25°C unless otherwise specified

NEW PRODUCT

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage VBR(CBO) 80 ⎯ V IC = 10 μA, IE = 0

Collector-Emitter Breakdown Voltage VBR(CEO) 80 ⎯ V IC = 1.0 mA, IB = 0

Emitter-Base Breakdown Voltage V(BR)EBO 4 ⎯ V IE = 100 μA, IC = 0

Collector Cutoff Current ICEX ⎯ 100 nA VCE = 60V, VEB(OFF) = 3.0V

Base Cutoff Current (IBEX) IBL ⎯ 100 nA VCE = 60V, VEB(OFF) = 3.0V

Collector-Base Cut Off Current ICBO ⎯ 100 nA VCB = 80V, IE = 0

Collector-Emitter Cut Off Current, IO(OFF) ICEO ⎯ 100 nA

VCE = 80V, IB = 0

Emitter-Base Cut Off Current IEBO ⎯ 100 nA

VEB = 5V, IC = 0

ON CHARACTERISTICS (Note 4)

60 ⎯ ⎯ V

CE = 1V, IC = 100 μA

80 ⎯ ⎯ V

CE = 1V, IC = 1 mA

100 ⎯ ⎯ V

CE = 1V, IC = 10 mA

100 ⎯ ⎯ V

CE = 1V, IC = 50 mA

90 ⎯ ⎯ V

CE = 1V, IC = 100 mA

DC Current Gain hFE

80 ⎯ ⎯ V

CE = 1V, IC = 200 mA

⎯ 0.1 V

IC = 10 mA, IB = 1 mA

⎯ 0.25 V

IC = 100 mA, IB = 10 mA

Collector-Emitter Saturation Voltage VCE(SAT)

⎯ 0.35 V

IC = 200 mA, IB = 20 mA

Base-Emitter Turn-on Voltage VBE(ON) ⎯ 0.98 V

VCE = 5V, IC = 2 mA

⎯ 0.95 V

IC = 10 mA, IB = 1 mA

Base-Emitter Saturation Voltage VBE(SAT) ⎯ 1.2 V

IC = 100 mA, VCE = 1V

SMALL SIGNAL CHARACTERISTICS

Output Capacitance COBO ⎯ 4 pF

VCB = 5.0 V, f = 1.0MHz, IE = 0

Input Capacitance CIBO ⎯ 6 pF

VEB = 5.0 V, f = 1.0MHz, IC = 0

Current Gain-Bandwidth Product fT100 ⎯ MHz VCE = 2 V, IC = 10mA, f = 100MHz

SWITCHING CHARACTERISTICS

Delay Time td⎯ 35 ns

Rise Time tr⎯ 35 ns

VCC = 3.0 V, IC = 10mA,

VBE(OFF) = 0.5V, IB1 = 1.0mA

Pulse Test: Pulse width, tp<300uS, Duty Cycle, d<=2%

Notes: 4. Short duration pulse test used to minimize self-heating effect.

Typical Characteristics

0

50

100

P

,

P

O

WE

R

DISSI

P

A

T

I

O

N

(mW)

D

T , AMBIENT TEMPERATURE (°C)

Fig. 1, Maximum Power Dissipation vs.

Ambient Temperature

A

150

200

250

R = 625°C/W

θ

JA

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Switching Diode (D1) Characteristics

NEW PRODUCT

10

100

1,000

1

0.1 01.61.20.4 0.8

I , INS

T

AN

T

ANE

O

U

S

F

O

R

WA

R

D

C

U

R

R

EN

T

(mA)

F

V , INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2, Typical Forward Characteristics

F

0.1

1

10

100

1,000

10,000

020 40 60 80 100

V , REVERSE VOLTAGE (V)

Fig. 3, Typical Reverse Characteristics

R

I, I

N

S

T

A

N

T

A

N

E

O

U

S

R

EVE

R

SE

C

U

R

R

E

N

T

(nA)

R

T = -40ºC

A

T = 25ºC

A

T = 75ºC

A

T = 125ºC

A

T = 0ºC

A

0

0.5

1

2.5

2

1.5

3

01020 40

30 50

C

,

T

O

T

AL

C

A

P

A

C

I

T

AN

C

E (p

F

)

T

V , REVERSE VOLTAGE (V)

Fig. 4, Typical Capacitance vs. Reverse Voltage

R

f = 1MHz

I,

C

O

LLE

C

T

O

R

-BASE

C

U

R

R

EN

T

(nA)

CBO

T , AMBIENT TEMPERATURE (ºC)

Fig. 5, I vs T

A

CBO A

10

0.01

0.1

1

25 50 75 100 125

V = 80V

CB

0.001 0.01

I BASE CURRENT (mA)

Fig. 6, V vs I

B,

CE B

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.1 1 10 100

V,

C

O

LLE

C

T

O

R

EMI

T

T

E

R

V

O

L

T

A

G

E (V)

CE

I = 1mA

C

I = 10mA

C

I = 30mA

C

I = 100mA

C

110

100 1,000

V,

C

O

LL

E

C

T

O

R

T

O

E

M

I

T

T

E

R

SATURATION VOLTAGE (V)

CE(SAT)

I , COLLECTOR CURRENT (mA)

Fig. 7, V vs I

C

CE(SAT) C

T = 25°C

A

T = -50°C

A

T = 150°C

A

0.050

0

0.100

0.150

0.200

0.250

0.300

0.350

0.400

0.450

0.500

I

I

C

B

= 10

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1

10

1,000

10,000

100

110 1,000

100

h, D

C

C

U

R

R

E

N

T

G

AI

N

FE

I , COLLECTOR CURRENT (mA)

Fig. 8, h vs I

C

FE C

0.1

0.2

0.1 110

V , BASE EMI

100

T

T

E

R

V

O

L

T

A

G

E (V)

BE(ON)

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

V = 5V

CE

I , COLLECTOR CURRENT (mA)

Fig. 9, V vs I

C

BE(ON) C

T = -50°C

A

T = 25°C

A

T = 150°C

A

1

10

1,000

100

110

f,

G

AIN BANDWID

T

H

P

R

O

D

U

C

T

(M

H

z)

T

I , COLLECTOR CURRENT (mA)

Fig. 10, f vs I

C

T

C

NEW PRODUCT

Application Details:

NPN transistor (MMBTA06) and Switching diode (BAV70) integrated as

one in SDBN500B01 can be used as a discrete entity for general

applications or part of a circuit to function as low side switch for sinking

current. NPN is selected based on high break-down voltage and

maximum collector current range. Switching diode is selected based

on instantaneous forward surge current. The Switching diode

dissipates very little power because it is on for only a small portion of

the switching cycle. It is designed to replace the discrete NPN

transistor and a Switching diode in two separate packages into one

small package as shown in Figure. It consumes less board space and

also helps to minimize conduction or switching losses due to parasitic

inductances (e.g. PCB traces) in power switch applications. (Please

see Fig. 11 for one example of typical application circuit used in

conjunction with DC-DC converter as a part of the power management

system).

R1

R2

SDBN500B01

Inductive Load

V supply

Fig. 11, Typical Application Circuit

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Ordering Information (Note 5)

NEW PRODUCT

Device Marking Code Packaging Shipping

SDBN500B01-7 RD07 SOT-363 3000/Tape & Reel

Notes: 5. For packaging details, please see below or go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

RD07

YM

RD07 = Product Type Marking Code,

YM = Date Code Marking

Y = Year e.g. T = 2006

M = Month e.g. 9 = September

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012

Code T U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Mechanical Details

DS30835 Rev. 3 - 2 6 of 6

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SDBN500B01

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Suggested Pad Layout: (Based on IPC-SM-782)

MPORTANT NOTICE

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product

described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall

assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,

harmless against all damages. LIFE SUPPORT

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written

approval of the President of Diodes Incorporated.

A

M

JL

DF

BC

H

K

SOT-363

Dim Min Max

A 0.10 0.30

B 1.15 1.35

C 2.00 2.20

D 0.65 Nominal

F 0.30 0.40

H 1.80 2.20

J – 0.10

K 0.90 1.00

L 0.25 0.40

M 0.10 0.25

α 0° 8°

All Dimensions in mm

X

Z

Y

C

EE

G

Dimensions Value

Z 2.5

G 1.3

X 0.42

Y 0.6

C 1.9

E 0.65

All Dimensions in mm

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