Si1304BDL Datasheet. Www.s Manuals.com. Vishay

User Manual: Marking of electronic components, SMD Codes KF, KF**, KF-, KF-***, KFJ, KFP, KFW, KFp, KFt, Kf. Datasheets BD49L26G, BZX84-A18, P6SMB7.5, PZU15B3, RP130Q531B, RT9198-35PV, Si1304BDL, TPSMB7.5.

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Si1304BDL
New Product

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET
FEATURES

PRODUCT SUMMARY
rDS(on) (W)

ID (A)a

0.270 @ VGS = 4.5 V

0.90

0.385 @ VGS = 2.5 V

0.75

VDS (V)
30

D TrenchFETr Power MOSFET
D 100% Rg Tested

Qg (Typ)

RoHS
COMPLIANT

11
1.1

SC-70 (3-LEADS)
D
G

1

S

D

KF

XX

YY

Marking Code
3

Lot Traceability
and Date Code

2

G

Part # Code
Top View

S
N-Channel MOSFET

Ordering Information: Si1304BDL–T1–E3

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Symbol

Limit

Drain-Source Voltage

Parameter

VDS

30

Gate-Source Voltage

VGS

"12

TC = 70_C
TA = 25_C

0.71
ID

0.85b, c
0.68b, c

TA = 70_C
Pulsed Drain Current

IDM

Continuous Source-Drain
Source Drain Diode Current

TC = 25_C
TA = 25_C

Maximum Power Dissipation

TA = 25_C

0.31
IS

0.28b, c
0.37
0.24

PD

W

0.34b, c
0.22b, c

TA = 70_C
Operating Junction and Storage Temperature Range

A

4

TC = 25_C
TC = 70_C

V

0.90

TC = 25_C
Continuous Drain Current (TJ = 150_C)

Unit

TJ, Tstg

_C

–55 to 150

THERMAL RESISTANCE RATINGS
Parameter

Symbol

Typical

Maximum

Maximum Junction-to-Ambientb, d

t p 5 sec

RthJA

315

375

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

285

340

Unit
_C/W

Notes:
a. Based on TC = 25_C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 5 sec
d. Maximum under steady state conditions is 360 _C/W.
Document Number: 73480
S–52057—Rev. B, 03–Oct–05

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Si1304BDL
New Product

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter

Symbol

Test Condition

Min

VDS

VGS = 0 V, ID = 250 mA

30

Typ

Max

Unit

Static
Drain-Source Breakdown Voltage

DVDS/TJ

VDS Temperature Coefficient

DVGS(th)/TJ

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

Gate-Source Leakage

IGSS

Zero Gate Voltage Drain Current

IDSS

On-State Drain Currenta

ID(on)

Drain-Source On-State Resistancea

rDS(on)

Forward Transconductancea

gfs

27.3

ID = 250 mA

VGS(th) Temperature Coefficient

V
mV/_C

3
1.3

V

VDS = 0 V, VGS = "12 V

"100

nA

VDS = 30 V, VGS = 0 V

1

VDS = 30 V, VGS = 0 V, TJ = 70_C

5

VDS w 5 V, VGS = 4.5 V

0.6

4

mA
A
A

VGS = 4.5 V, ID = 0.9

0.216

0.270

VGS =2.5 V, ID = 0.75

0.308

0.385

VDS = 15 V, ID = 0.9

2

W
S

Dynamicb
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Gate Resistance

Rg

Turn-On Delay Time

100
VDS = 15 V, VGS = 0 V, f = 1 MHz

20
VDS = 15 V, VGS = 4.5 V, ID = 0.9

VDS = 15 V, VGS = 2.5 V, ID= 0.9

tr

Turn-Off Delay Time

td(off)

Fall Time

1.8

2.7

1.1

1.7
nC

0.4
0.6

f = 1 MHz

td(on)

Rise Time

pF
p

30

VDD = 15 V, RL = 22 W
ID ^ 0.68 A, VGEN = 4.5 V, Rg = 1 W

tf

1.5

2.3

10

15

30

45

5

25

10

15

W

ns

Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward

Currenta

Body Diode Voltage

IS

TC = 25_C

0.31

ISM
VSD

4
IS = 0.28 A

0.8

1.2

A
V

Body Diode Reverse Recovery Time

trr

50

75

ns

Body Diode Reverse Recovery Charge

Qrr

105

160

nC

Reverse Recovery Fall Time

ta

Reverse Recovery Rise Time

tb

IF = 0.28
0 28 A,
A di/dt = 100 A/ms,
A/ms TJ = 25_C

34
16

ns

Notes
a.
b.

Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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Document Number: 73480
S–52057—Rev. B, 03–Oct–05

Si1304BDL
New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics

Transfer Characteristics curves vs. Temp

4

2.0
VGS = 3 thru 5 V
1.5
I D – Drain Current (A)

I D – Drain Current (A)

3
VGS = 2.5 V
2

VGS = 2.0 V
1

1.0
TA = –55_C
0.5

TA = 25_C
TA = 125_C

VGS = 1.5 V
0
0.0

0.5

1.0

1.5

2.0

2.5

0.0
0.0

3.0

0.5

VDS – Drain-to-Source Voltage (V)

1.0

2.5

Capacitance

On-Resistance vs. Drain Current
180.0

150.0

0.5
C – Capacitance (pF)

r DS(on) – On-Resistance ( W )

2.0

VGS – Gate-to-Source Voltage (V)

0.6

VGS = 2.5 V
0.4

0.3
VGS = 4.5 V

120.0
Ciss
90.0

60.0
Coss

0.2

30.0

0.1
0

1

2

3

4

0.0
0.0

5

Crss
5.0

ID – Drain Current (A)

15.0

20.0

25.0

30.0

On-Resistance vs. Junction Temperature
2.0

ID = 0.91 A

ID = 0.90 A

4

1.7
rDS(on) – On-Resistance
(Normalized)

VDS = 15 V
3
VDS = 24 V
2

1

0
0.0

10.0

VDS – Drain-Source Voltage (V)

Qg–Gate Charge

5
V GS – Gate-to-Source Voltage (V)

1.5

VGS = 4.5 V, ID = 0.9 A
1.4

1.1
VGS = 2.5 V, ID = 0.75 A
0.8

0.5

1.0

1.5

Qg – Total Gate Charge (nC)

Document Number: 73480
S–52057—Rev. B, 03–Oct–05

2.0

0.5
–50

–25

0

25

50

75

100

125

150

TJ – Junction Temperature (_C)

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Si1304BDL
New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Forward Diode Voltage vs. Temp

rDS(on) vs VGS vs Temperature

0.800

10.0

r DS(on) – On-Resistance ( W )

I S – Source Current (A)

ID = 0.9 A

TJ = 150_C
1.0

TJ = 25_C
0.1

0.0

0.600
TA = 125_C
0.400

0.200

TA = 25_C

0.000

0.3

0.6

0.9

1.2

0

1

VSD – Source-to-Drain Voltage (V)

2

3

4

5

VGS – Gate-to-Source Voltage (V)

Single Pulse Power, Junction-to-Ambient

Threshold Voltage
1.4

20

1.3
16
ID = 250 mA
1.1

Power (W)

V GS(th) Variance (V)

1.2

1.0
0.9
0.8

12
TA = 25_C
8

4

0.7
0.6
–50

–25

0

25

50

75

100

125

0
10–3

150

10–2

10–1

1

10

100

600

Time (sec)

TJ – Temperature (_C)

Safe Operating Area
10

*Limited by rDS(on)

I D – Drain Current (A)

1 ms
1

10 ms
100 ms

0.1

1s
10 s

0.01

TA = 25_C
Single Pulse

dc

BVDSS Limited
0.001
0.1

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1
1000
100
10
VDS – Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified

Document Number: 73480
S–52057—Rev. B, 03–Oct–05

Si1304BDL
New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Current De-Rating*

Power, De-Rating

1.2

0.4

Power Dissipation (W)

ID – Drain Current (A)

1.0

0.8

0.6

0.4

0.3

0.2

0.1
0.2

0.0

0.0
0

25

50

75

100

TC – Case Temperature (_C)

125

150

25

50

75

100

125

150

Case Temperature (_C)

*The power dissipation PD is based on TJ(max) = 150_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Document Number: 73480
S–52057—Rev. B, 03–Oct–05

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Si1304BDL
New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Effective Transient
Thermal Impedance

2
1
Duty Cycle = 0.5

0.2
Notes:

0.1
PDM

0.1
0.05

t1
t2
1. Duty Cycle, D =

0.02

t1
t2

2. Per Unit Base = RthJA = 360_C/W
3. TJM – TA = PDMZthJA(t)

Single Pulse

4. Surface Mounted

0.01
10–4

10–3

10–2

10

100

600

Normalized Thermal Transient Impedance, Junction-to-Foot

2

Normalized Effective Transient
Thermal Impedance

10–1
1
Square Wave Pulse Duration (sec)

1
Duty Cycle = 0.5

0.2
0.1
0.1

0.05
0.02

Single Pulse
0.01
10–4

10–3

10–2
10–1
Square Wave Pulse Duration (sec)

1

10

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73480.
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Document Number: 73480
S–52057—Rev. B, 03–Oct–05

Legal Disclaimer Notice
Vishay

Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
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Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000
Revision: 08-Apr-05

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