Si1304BDL Datasheet. Www.s Manuals.com. Vishay

User Manual: Marking of electronic components, SMD Codes KF, KF**, KF-, KF-***, KFJ, KFP, KFW, KFp, KFt, Kf. Datasheets BD49L26G, BZX84-A18, P6SMB7.5, PZU15B3, RP130Q531B, RT9198-35PV, Si1304BDL, TPSMB7.5.

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Datasheet
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FEATURES

DTrenchFETr Power MOSFET

D100% Rg Tested RoHS

COMPLIANT

Si1304BDL

Vishay Siliconix

New Product

Document Number: 73480

S–52057—Rev. B, 03–Oct–05

www.vishay.com

N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V) rDS(on) (W)ID (A)aQg (Typ)

0.270 @ VGS = 4.5 V 0.90

0.385 @ VGS = 2.5 V 0.75

Ordering Information: Si1304BDL–T1–E3

SC-70 (3-LEADS)

Top View

Marking Code

KF XX

Lot Traceability

and Date Code

Part # Code

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit

Drain-Source Voltage VDS 30

Gate-Source Voltage VGS "12

TC = 25_C0.90

Continuous Drain Current (T 150_C)

TC = 70_C

0.71

Continuous Drain Current (TJ = 150_C) TA = 25_CID0.85b, c

TA = 70_C0.68b, cA

Pulsed Drain Current IDM 4

Continuous Source Drain Diode Current

TC = 25_C

0.31

Continuous Source-Drain Diode Current TA = 25_CIS0.28b, c

TC = 25_C0.37

Maximum Power Dissipation

TC = 70_C

0.24

Maximum Power Dissipation TA = 25_CPD0.34b, cW

TA = 70_C0.22b, c

Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambientb, dt p 5 sec RthJA 315 375

C/W

Maximum Junction-to-Foot (Drain) Steady State RthJF 285 340

C/W

Notes:

a. Based on TC = 25_C.

b. Surface mounted on 1” x 1” FR4 board.

c. t = 5 sec

d. Maximum under steady state conditions is 360 _C/W.

Si1304BDL

Vishay Siliconix New Product

www.vishay.com

Document Number: 73480

S–52057—Rev. B, 03–Oct–05

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 mA30 V

VDS Temperature Coefficient DVDS/TJ

I= 250 mA

27.3

mV/_C

VGS(th) Temperature Coefficient DVGS(th)/TJ

ID = 250 mA3mV/_C

Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA0.6 1.3 V

Gate-Source Leakage IGSS VDS = 0 V, VGS = "12 V "100 nA

Zero Gate Voltage Drain Current

VDS = 30 V, VGS = 0 V 1

Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 70_C5mA

On-State Drain CurrentaID(on) VDS w 5 V, VGS = 4.5 V4 A

Drain

Source On

State Resistance

rDS(on)

VGS = 4.5 V, ID = 0.9 0.216 0.270

ource

tate

stance

rDS(on) VGS =2.5 V, ID = 0.75 0.308 0.385

Forward Transconductanceagfs VDS = 15 V, ID = 0.9 2 S

Dynamicb

Input Capacitance Ciss 100

Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz 30 pF

Reverse Transfer Capacitance Crss 20

Total Gate Charge

VDS = 15 V, VGS = 4.5 V, ID = 0.9 1.8 2.7

Total Gate Charge Qg1.1 1.7

Gate-Source Charge Qgs VDS = 15 V, VGS = 2.5 V, ID= 0.9 0.4 nC

Gate-Drain Charge Qgd 0.6

Gate Resistance Rgf = 1 MHz 1.5 2.3 W

Turn-On Delay Time td(on) 10 15

Rise Time trV

= 15 V, R

= 22 W30 45

Turn-Off Delay Time td(off)

VDD

ID ^ 0.68 A, VGEN = 4.5 V, Rg = 1 W5 25 ns

Fall Time tf

10 15

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current ISTC = 25_C0.31

Pulse Diode Forward CurrentaISM 4A

Body Diode Voltage VSD IS = 0.28 A 0.8 1.2 V

Body Diode Reverse Recovery Time trr 50 75 ns

Body Diode Reverse Recovery Charge Qrr

I0 28 A di/dt 100 A/msT 25_C

105 160 nC

Reverse Recovery Fall Time ta

IF = 0.28 A, di/dt = 100 A/ms, TJ = 25_C34

Reverse Recovery Rise Time tb16 ns

Notes

a. Pulse test; pulse width v 300 ms, duty cycle v 2%.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Si1304BDL

Vishay Siliconix

New Product

Document Number: 73480

S–52057—Rev. B, 03–Oct–05

www.vishay.com

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.5

1.0

1.5

2.0

0.0 0.5 1.0 1.5 2.0 2.5

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS = 3 thru 5 V

Output Characteristics Transfer Characteristics curves vs. Temp

VDS – Drain-to-Source Voltage (V)

– Drain Current (A)ID

VGS – Gate-to-Source Voltage (V)

– Drain Current (A)ID

0.0

30.0

60.0

90.0

120.0

150.0

180.0

0.0 5.0 10.0 15.0 20.0 25.0 30.0

0.1

0.2

0.3

0.4

0.5

0.6

012345

0.0 0.5 1.0 1.5 2.0

0.5

0.8

1.1

1.4

1.7

2.0

–50 –25 0 25 50 75 100 125 150

Crss

ID = 0.91 A ID = 0.90 A

VGS = 2.5 V

Qg–Gate Charge

On-Resistance vs. Drain Current

– Gate-to-Source Voltage (V)

Qg – Total Gate Charge (nC)

VDS – Drain-Source Voltage (V)

C – Capacitance (pF)

VGS – On-Resistance (rDS(on) W)

ID – Drain Current (A)

Capacitance

On-Resistance vs. Junction Temperature

TJ – Junction Temperature (_C)

VGS = 4.5 V

Coss

Ciss

rDS(on) – On-Resistance

(Normalized)

VDS = 15 V

VGS = 2.5 V

VGS = 2.0 V

VGS = 1.5 V

TA = 25_C

TA = –55_C

VDS = 24 V

VGS = 4.5 V, ID = 0.9 A

VGS = 2.5 V, ID = 0.75 A

TA = 125_C

Si1304BDL

Vishay Siliconix New Product

www.vishay.com

Document Number: 73480

S–52057—Rev. B, 03–Oct–05

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

TJ = 25_C

TJ = 150_C

Safe Operating Area

– Drain Current (A)ID

1 ms

TA = 25_C

Single Pulse

10 ms

100 ms

VDS – Drain-to-Source Voltage (V)

*VGS u minimum VGS at which rDS(on) is specified

1 s

10 s

0.3 0.6 0.9 1.2

0.000

0.200

0.400

0.600

0.800

012345

ID = 0.9 A

Forward Diode Voltage vs. Temp rDS(on) vs VGS vs Temperature

– On-Resistance (rDS(on) W)

VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)

– Source Current (A)IS

TA = 25_C

TA = 125_C

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

–50 –25 0 25 50 75 100 125 150

ID = 250 mA

Threshold Voltage

Variance (V)VGS(th)

TJ – Temperature (_C)

0.0

0.1

1.0

10.0

Power (W)

Single Pulse Power, Junction-to-Ambient

Time (sec)

1 100 6001010–1

10–3 10–2

0.001

0.01

0.1

0.1 110 100 1000

BVDSS Limited

*Limited by rDS(on)

TA = 25_C

Si1304BDL

Vishay Siliconix

New Product

Document Number: 73480

S–52057—Rev. B, 03–Oct–05

www.vishay.com

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0 25 50 75 100 125 150

Current De-Rating*

ID – Drain Current (A)

TC – Case Temperature (_C)

*The power dissipation PD is based on TJ(max) = 150_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for

cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

0.0

0.1

0.2

0.3

0.4

25 50 75 100 125 150

Power, De-Rating

Case Temperature (_C)

Power Dissipation (W)

Si1304BDL

Vishay Siliconix New Product

www.vishay.com

Document Number: 73480

S–52057—Rev. B, 03–Oct–05

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

10–3 10–2 1 10 60010–1

10–4 100

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

Normalized Effective Transient

Thermal Impedance

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 360_C/W

3. TJM – TA = PDMZthJA(t)

Notes:

4. Surface Mounted

PDM

10–3 10–2 11010–1

10–4

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Foot

Square Wave Pulse Duration (sec)

Normalized Effective Transient

Thermal Impedance

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and

Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see

http://www.vishay.com/ppg?73480.

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Document Number: 91000 www.vishay.com

Revision: 08-Apr-05 1

Notice

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or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

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