Si2318DS Datasheet. Www.s Manuals.com. Vishay
User Manual: Marking of electronic components, SMD Codes C8, C8*, C8***, C8-**, C8-***, C84, C8=**, C8=***, C8A, C8B, C8C, C8D, C8E, C8F, C8G, C8H, C8J, C8K, C8L, C8M, C8N, C8P, C8Q, C8R, C8S, C8T, C8U, C8V, C8W, C8X, C8Y, C8Z. Datasheets BSS84, BZX585-B4V7, CMPZ5226B, CMPZ5227B, CMPZ5228B, CMPZ5229B, CMPZ5230B, CMPZ5231B, CMPZ5232B, CMPZ5233B, CMPZ5234B, CMPZ5235B, CMPZ5236B, CMPZ5237B, CMPZ5238B, CMPZ5239B, CMPZ5240B, CMPZ5241B, CMPZ5242B, CMPZ5243B, CMPZ5244B, CMPZ5245B, CMPZ5246B, CMPZ5247B, CMPZ5248B, CMPZ5249B, RT
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Si2318DS Vishay Siliconix New Product N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.045 @ VGS = 10 V 3.9 0.058 @ VGS = 4.5 V 3.5 APPLICATIONS D Stepper Motors D Load Switch TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2318DS-T1 (with Tape and Reel) 2 Top View Si2318DS( C8)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS 40 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a, b TA= 25_C TA= 70_C Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a, b TA= 25_C Power Dissipationa, b TA= 70_C Operating Junction and Storage Temperature Range ID V 3.9 3.0 3.1 2.4 IDM 16 IS 0.8 PD 1.25 0.75 0.8 0.48 TJ, Tstg Unit - 55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (drain) Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 75 100 120 166 40 50 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Document Number: 72322 S-31731—Rev. A, 18-Aug-03 www.vishay.com 1 Si2318DS Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 40 VGS(th) VDS = VGS, ID = 250 mA 1 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 Zero Gate Voltage Drain Current IDSS VDS = 32 V, VGS = 0 V 0.5 VDS = 32 V, VGS = 0 V, TJ = 55_C 10 On-State Drain Currenta ID(on) Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain Source On-Resistance Drain-Source On Resistancea VDS w 4.5 V, VGS = 10 V rDS(on) DS( ) Forward Transconductancea Diode Forward Voltage V 3 nA mA 6 A VGS = 10 V, ID = 3.9 A 0.036 0.045 VGS = 4.5 V, ID = 3.5 A 0.045 0.058 gfs VDS = 10 V, ID = 3.9 A 11 VSD IS = 1.25 A, VGS = 0 V 0.8 1.2 10 15 VDS = 20 V, VGS = 10 V, ID = 3.9 A 1.6 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd nC 2.1 Gate Resistance Rg 1.8 Input Capacitance Ciss 540 Output Capacitance Coss Reverse Transfer Capacitance Crss W 80 VDS = 20 V, VGS = 0 V, f = 1 MHz pF p 45 Switching Turn-On Delay Time Rise Time Turn-Off Delay Time td(on) 5 10 tr 12 20 20 30 15 25 VDD = 20 V, RL = 20 W ID ^ 1.0 A, VGEN = 10 V, RG = 6 W td(off) Fall-Time tf ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 VGS = 10 thru 5 V 16 4V I D - Drain Current (A) I D - Drain Current (A) 16 12 8 4 1, 2 V 2 4 6 8 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 8 TC = 125_C 4 3V 25_C 0 0 12 10 0 0.0 0.5 1.0 1.5 2.0 - 55_C 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Document Number: 72322 S-31731—Rev. A, 18-Aug-03 Si2318DS Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.06 VGS = 4.5 V VGS = 10 V 0.04 Capacitance 800 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.08 0.02 Ciss 600 400 200 0.00 Coss 0 0 4 8 12 16 20 0 8 ID - Drain Current (A) Gate Charge 24 32 40 On-Resistance vs. Junction Temperature 2.0 VDS = 20 V ID = 3.9 A 8 r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 16 VDS - Drain-to-Source Voltage (V) 10 6 4 2 VGS = 10 V ID = 3.9 A 1.7 1.4 1.1 0.8 0 0 2 4 6 8 10 0.5 - 50 12 - 25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.20 r DS(on) - On-Resistance ( W ) TJ = 150_C 1 TJ = 25_C 0.1 0.0 25 TJ - Junction Temperature (_C) 10 I S - Source Current (A) Crss 0.16 ID = 3.9 A 0.12 0.08 0.04 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 72322 S-31731—Rev. A, 18-Aug-03 1.2 1.4 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si2318DS Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 10 8 ID = 250 mA - 0.0 Power (W) V GS(th) Variance (V) 0.2 - 0.2 6 TA = 25_C 4 - 0.4 2 - 0.6 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 Time (sec) TJ - Temperature (_C) 100.0 Safe Operating Area, Junction-to-Case Limited by rDS(on) 10 ms I D - Drain Current (A) 10.0 100 ms 1.0 1 ms 10 ms 0.1 100 ms TA = 25_C Single Pulse dc, 100 s, 10 s, 1 s 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 166_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 - 4 www.vishay.com 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72322 S-31731—Rev. A, 18-Aug-03 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 www.s-manuals.com
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