Si2343DS Datasheet. Www.s Manuals.com. Vishay

User Manual: Marking of electronic components, SMD Codes F3, F3*, F3**, F3***, F30, F30*, F32, F33, F33*, F35, F3=***, F3B. Datasheets 1SS193, BZX585-C3V0, EMF32, EMF33, HSMP-3823, MMSZ5238, PZU2.7B1, R7732AGE, SP6201EM5-3-0, SP6201EM5-3-3, SP6201EM5-3-5, Si2343DS, TC1073-3.0VCH713 , TPCF8102, UMF32N, WL2805N30, WL2805N33.

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Si2343DS
Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY
VDS (V)
- 30

RDS(on) (Ω)

• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET

ID (A)

0.053 at VGS = - 10 V

- 4.0

0.086 at VGS = - 4.5 V

- 3.1

APPLICATIONS
• Load Switch
• PA Switch
TO-236
(SOT-23)
G

1

S

2

3

D

Top View
Si2343DS (F3)*
* Marking Code
Ordering Information: Si2343DS-T1
Si2343DS-T1-E3 (Lead (Pb)-free)
Si2343DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter

Symbol

5s

Steady State

Drain-Source Voltage

VDS

- 30

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)a, b

TA = 25 °C
TA = 70 °C

Continuous Source Current (Diode Conduction)a, b

IS
TA = 25 °C
TA = 70 °C

PD

- 3.1

- 3.2

- 2.5
- 15

- 1.0

- 0.6

1.25

0.75

0.8

0.48

TJ, Tstg

Operating Junction and Storage Temperature Range

V

- 4.0

IDM

Pulsed Drain Current

Maximum Power Dissipationa, b

ID

Unit

- 55 to 150

A

W
°C

THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)

Symbol
t≤5s
Steady State
Steady State

RthJA
RthJF

Typical

Maximum

75

100

120

166

40

50

Unit
°C/W

Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.

* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 72079
S09-0133-Rev. B, 02-Feb-09

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1

Si2343DS
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Limits
Parameter

Symbol

Test Conditions

Min.

V(BR)DSS

VGS = 0 V, ID = - 250 µA

- 30

VGS(th)

VDS = VGS, ID = - 250 µA

-1

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

VDS = - 24 V, VGS = 0 V

-1

VDS = - 24 V, VGS = 0 V, TJ = 55 °C

- 10

Typ.

Max.

Unit

Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current

IDSS

On-State Drain Currenta

ID(on)

Drain-Source On-Resistancea

RDS(on)

VDS ≤ - 5 V, VGS = - 10 V

-3

- 15

V
nA
µA
A

VGS = - 10 V, ID = - 4.0 A

0.043

0.053

VGS = - 4.5 V, ID = - 3.1 A

0.068

0.086

Forward Transconductancea

gfs

VDS = - 5 V, ID = - 4.0 A

10

Diode Forward Voltage

VSD

IS = - 1.0 A, VGS = 0 V

- 0.7

- 1.2

14

21

Ω
S
V

Dynamicb
Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS = - 15 V, VGS = - 10 V
ID ≅ - 4.0 A

nC

1.9
3.7
540

VDS = - 15 V, VGS = 0 V, f = 1 MHz

pF

131
105

Switchingc
Turn-On Time
Turn-Off Time

td(on)
tr
td(off)
tf

VDD = - 15 V, RL = 15 Ω
ID ≅ - 1.0 A, VGEN = - 10 V
RG = 6 Ω

10

15

15

25

31

50

20

30

ns

Notes:
a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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2

Document Number: 72079
S09-0133-Rev. B, 02-Feb-09

Si2343DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15

15
4V

VGS = 10 thru 5 V

12
I D - Drain Current (A)

I D - Drain Current (A)

12

9

6

6
TC = 125 °C

3V

3

9

3
25 °C

0
0

1

2

3

4

0
0.0

5

1.5

2.0

2.5

3.0

VGS - Gate-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics

3.5

4.0

1000

0.10

800

0.08

C - Capacitance (pF)

R DS(on) - On-Resistance (Ω)

1.0

VDS - Drain-to-Source Voltage (V)

0.12

VGS = 4.5 V

0.06
VGS = 10 V
0.04

Ciss

600

400
Coss

200

0.02

Crss

0.00

0
0

3

6

9

12

15

0

5

10

15

20

25

ID - Drain Current (A)

VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

Capacitance

10

30

1.6
VDS =15 V
ID = 4.0 A

1.4

6

4

2

(Normalized)

8

R DS(on) - On-Resistance

V GS - Gate-to-Source Voltage (V)

0.5

- 55 °C

VGS = 4.0 V
ID = 4.0 A

1.2

1.0

0.8

0
0

3

6

9

Qg - Total Gate Charge (nC)

Gate Charge

Document Number: 72079
S09-0133-Rev. B, 02-Feb-09

12

15

0.6
- 50

- 25

0

25

50

75

100

125

150

TJ - Junction Temperature (°C)

On-Resistance vs. Junction Temperature

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Si2343DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.12

20

0.10
R DS(on) - On-Resistance (Ω)

I S - Source Current (A)

10

TJ = 150 °C

TJ = 25 °C

ID = 4.0 A
0.08

ID = 1 A

0.06

0.04

0.02

0.00

1
0

0.2

0.4

0.6

0.8

1.0

1.2

0

1.4

4

6

8

VSD - Source-to-Drain Voltage (V)

VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

0.6

10

12
ID = 250 µA

10

0.4

8
0.2

Power (W)

V GS(th) Variance (V)

2

0.0

6

4
TA = 25 °C
- 0.2

- 0.4
- 50

2

0
- 25

0

25

50

75

100

125

150

0.01

0.1

1

10

TJ - Temperature (°C)

Time (s)

Threshold Voltage

Single Pulse Power

100

600

100
IDM Limited
Limited by RDS(on)*
I D - Drain Current (A)

10
P(t) = 0.0001

1

0.1

P(t) = 0.001

ID(on)
Limited

P(t) = 0.01
P(t) = 0.1

TA = 25 °C
Single Pulse
BVDSS Limited

0.01
0.1

P(t) = 1
P(t) = 10
DC

1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area
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Document Number: 72079
S09-0133-Rev. B, 02-Feb-09

Si2343DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance

Duty Cycle = 0.5

0.2

Notes:

0.1

PDM

0.1

t1

0.05

t2
1. Duty Cycle, D =

t1
t2
2. Per Unit Base = R thJA = 120 °C/W

0.02

3. T JM - TA = PDMZthJA(t)
4. Surface Mounted

Single Pulse
0.01
10-4

10-3

10-2

10-1

1

10

100

600

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72079.

Document Number: 72079
S09-0133-Rev. B, 02-Feb-09

www.vishay.com
5

Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD

b

3
E1
1

E

2

e

S
e1

D
0.10 mm

C

0.004"

A2

A

C

q

Gauge Plane
Seating Plane

Seating Plane
C

A1

Dim

0.25 mm

L
L1

MILLIMETERS
Min

INCHES
Max

Min

Max
0.044

A

0.89

1.12

0.035

A1

0.01

0.10

0.0004

0.004

A2

0.88

1.02

0.0346

0.040

b

0.35

0.50

0.014

0.020

c

0.085

0.18

0.003

0.007

D

2.80

3.04

0.110

0.120

E

2.10

2.64

0.083

0.104

E1

1.20

1.40

0.047

e

0.95 BSC

e1
L

1.90 BSC
0.40

L1
q

0.0748 Ref
0.60

0.016

0.64 Ref

S

0.024
0.025 Ref

0.50 Ref
3°

0.055
0.0374 Ref

0.020 Ref
8°

3°

8°

ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479

Document Number: 71196
09-Jul-01

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1

AN807
Vishay Siliconix

Mounting LITTLE FOOTR SOT-23 Power MOSFETs

Wharton McDaniel

Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.

See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286), for the basis
of the pad design for a LITTLE FOOT SOT-23 power MOSFET
footprint . In converting this footprint to the pad set for a power
device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.

ambient air. This pattern uses all the available area underneath the
body for this purpose.

0.114
2.9

0.081
2.05
0.150
3.8
0.059
1.5

0.0394
1.0

0.037
0.95

FIGURE 1. Footprint With Copper Spreading

The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional
function of providing the thermal connection from the package to
the PC board. The total cross section of a copper trace connected
to the drain may be adequate to carry the current required for the
application, but it may be inadequate thermally. Also, heat spreads
in a circular fashion from the heat source. In this case the drain pin
is the heat source when looking at heat spread on the PC board.

Figure 1 shows the footprint with copper spreading for the SOT-23
package. This pattern shows the starting point for utilizing the
board area available for the heat spreading copper. To create this
pattern, a plane of copper overlies the drain pin and provides
planar copper to draw heat from the drain lead and start the
process of spreading the heat so it can be dissipated into the

Document Number: 70739
26-Nov-03

Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.

A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low-impedance
path for heat to move away from the device.

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1

Application Note 826
Vishay Siliconix

0.049

(1.245)

0.029

0.022
(0.559)

(0.724)

0.037
(0.950)

(2.692)

0.106

RECOMMENDED MINIMUM PADS FOR SOT-23

0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)

Return to Index Return to Index

APPLICATION NOTE

Document Number: 72609
Revision: 21-Jan-08

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25

Legal Disclaimer Notice
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Vishay

Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

1

Document Number: 91000

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