Sn7002 Infineon
User Manual: Marking of electronic components, SMD Codes SS, SS12, SS14, sSG, sSN. Datasheets 2SC2405, 2SC3929, BSS138, BZX84J-B39, RP130K501A, SN7002, SN7002N, SN7002W, SS12T3 , SS14T3 .
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SN 7002 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking SN 7002 60 V 0.19 A 5Ω SOT-23 sSG Type SN 7002 Ordering Code Q67000-S063 D Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Drain source voltage VDS Drain-gate voltage V 60 Unit V DGR RGS = 20 kΩ 60 Gate source voltage VGS ESD Sensitivity (HBM) as per MIL-STD 883 ± 20 Class 1 Continuous drain current A ID TA = 25 ˚C 0.19 DC drain current, pulsed IDpuls TA = 25 ˚C 0.76 Power dissipation W Ptot TA = 25 ˚C Data Sheet Values 0.36 1 05.99 SN 7002 Maximum Ratings Parameter Symbol Values Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ≤ 350 Therminal resistance, chip-substrate- reverse side 1) RthJSR ≤ 285 DIN humidity category, DIN 40 040 ˚C K/W E IEC climatic category, DIN IEC 68-1 1) For package mounted on aluminium Unit 55 / 150 / 56 15 mm x 16.7 mm x 0.7 mm Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage 60 - - 0.8 1.4 2 V GS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V V (BR)DSS µA IDSS VDS = 60 V, VGS = 0 V, Tj = 25 ˚C - 0.1 1 VDS = 60 V, VGS = 0 V, Tj = 125 ˚C - - 5 Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-state resistance nA IGSS - 1 10 Ω RDS(on) VGS = 10 V, ID = 0.5 A - 2 5 VGS = 4.5 V, ID = 0.05 A - 3 7.5 Data Sheet 2 05.99 SN 7002 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance S gfs VDS≥ 2 * ID * RDS(on)max, ID = 0.2 A Input capacitance 0.1 - 60 80 - 15 25 - 15 25 Crss VGS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time pF Coss VGS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance 0.2 ns td(on) VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω Rise time - 5 8 - 5 8 - 12 16 - 13 17 tr VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω Data Sheet 3 05.99 SN 7002 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current A IS TA = 25 ˚C Inverse diode direct current,pulsed 0.19 - - 0.76 V V SD VGS = 0 V, IF = 0.5 A, Tj = 25 ˚C Data Sheet - ISM TA = 25 ˚C Inverse diode forward voltage - - 4 1 1.2 05.99 SN 7002 Power dissipation Ptot = ƒ(TA) Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0.40 0.20 W A 0.32 ID 0.16 0.28 0.14 0.24 0.12 0.20 0.10 0.16 0.08 0.12 0.06 0.08 0.04 0.04 0.02 0.00 0 0.00 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 TA ˚C 160 TA Safe operating area ID=f(VDS) Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) parameter : D = 0.01, TC=25˚C 71 V V(BR)DSS 68 66 64 62 60 58 56 54 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 5 05.99 SN 7002 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 ˚C 0.45 A ID Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 ˚C 16 Ptot = 0W k i h jl g f b VGS [V] a 2.0 0.35 0.30 d 0.25 a 0.20 0.15 c b 2.5 c 3.0 d 3.5 e 4.0 f 4.5 g 5.0 h 6.0 i 7.0 j 8.0 k 9.0 l 10.0 c a Ω e RDS (on) 12 10 8 6 d 4 0.10 e f lki gj h 2 VGS [V] = 0.05 a 2.0 0.00 b 2.5 c 3.0 d 3.5 e f 4.0 4.5 g 5.0 h i 6.0 7.0 j 8.0 k l 9.0 10.0 b 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.00 0.04 0.08 0.12 0.16 A VDS 0.24 ID Typ. transfer characteristics ID = f(V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, 0.40 1.1 A S ID 0.9 gfs 0.8 0.7 0.30 0.25 0.6 0.20 0.5 0.15 0.4 0.3 0.10 0.2 0.05 0.1 0.0 0.00 0 1 2 3 4 5 6 7 8 V 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VGS Data Sheet A 1.0 ID 6 05.99 SN 7002 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.5 A, VGS = 10 V Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 16 4.6 V Ω RDS (on) 4.0 VGS(th) 12 3.6 3.2 10 2.8 2.4 8 98% 98% 2.0 6 typ 1.6 1.2 4 2% typ 0.8 2 0.4 0 0.0 -60 -20 20 60 100 ˚C 160 -60 -20 20 60 100 ˚C Tj 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 10 0 pF A IF C 10 2 10 -1 Ciss Coss 10 1 10 -2 Tj = 25 ˚C typ Tj = 150 ˚C typ Crss Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 0 0 5 10 15 20 25 30 V 10 -3 0.0 40 VDS Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 05.99
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File Type : PDF File Type Extension : pdf MIME Type : application/pdf PDF Version : 1.2 Linearized : Yes Encryption : Standard V1.2 (40-bit) User Access : Print, Copy, Fill forms, Extract, Assemble, Print high-res Create Date : 1999:05:05 13:29:12 Producer : Acrobat Distiller 3.01 for Windows Author : Creator : ADOBEPS4.DRV Version 4.11 Title : Modify Date : 1999:05:05 13:35:09 Page Count : 7EXIF Metadata provided by EXIF.tools