Sn7002 Infineon

User Manual: Marking of electronic components, SMD Codes SS, SS12, SS14, sSG, sSN. Datasheets 2SC2405, 2SC3929, BSS138, BZX84J-B39, RP130K501A, SN7002, SN7002N, SN7002W, SS12T3 , SS14T3 .

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Page Count: 7

Data Sheet 1 05.99

SIPMOS ® Small-Signal Transistor

• N channel

• Enhancement mode

• Logic Level

• V

GS(th) = 0.8...2.0V

Pin 1 Pin 2 Pin 3

G S D

Type

V

DS

I

D

R

DS(on) Package Marking

SN 7002 60 V 0.19 A 5

Ω

SOT-23 sSG

Type Ordering Code Tape and Reel Information

SN 7002 Q67000-S063 E6327

Maximum Ratings

Parameter Symbol Values Unit

Drain source voltage

V

DS 60 V

Drain-gate voltage

R

GS = 20 k

Ω

V

DGR

60

Gate source voltage

V

GS

±

20

ESD Sensitivity (HBM) as per MIL-STD 883 Class 1

Continuous drain current

T

A = 25 ˚C

I

D

0.19

A

DC drain current, pulsed

T

A = 25 ˚C

I

Dpuls

0.76

Power dissipation

T

A = 25 ˚C

P

tot

0.36

W

SN 7002

SN 7002

Data Sheet 2 05.99

Maximum Ratings

Parameter Symbol Values Unit

Chip or operating temperature

T

j -55 ... + 150 ˚C

Storage temperature

T

stg -55 ... + 150

Thermal resistance, chip to ambient air

R

thJA

≤

350 K/W

Therminal resistance, chip-substrate- reverse side 1)

R

thJSR

≤

285

DIN humidity category, DIN 40 040 E

IEC climatic category, DIN IEC 68-1 55 / 150 / 56

1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm

Electrical Characteristics, at

T

j = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

GS = 0 V,

I

D = 0.25 mA,

T

j = 25 ˚C

V

(BR)DSS

60 - -

V

Gate threshold voltage

V

GS=

V

DS,

I

D = 1 mA

V

GS(th)

0.8 1.4 2

Zero gate voltage drain current

V

DS = 60 V,

V

GS = 0 V,

T

j = 25 ˚C

V

DS = 60 V,

V

GS = 0 V,

T

j = 125 ˚C

I

DSS

-

-

-

0.1

5

1

µA

Gate-source leakage current

V

GS = 20 V,

V

DS = 0 V

I

GSS

- 1 10

nA

Drain-Source on-state resistance

V

GS = 10 V,

I

D = 0.5 A

V

GS = 4.5 V,

I

D = 0.05 A

R

DS(on)

-

-

3

2

7.5

5

Ω

SN 7002

Data Sheet 3 05.99

Electrical Characteristics, at

T

j = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

V

DS

≥

2 *

I

D *

R

DS(on)max,

I

D = 0.2 A

g

fs

0.1 0.2 -

S

Input capacitance

V

GS = 0 V,

V

DS = 25 V,

f

= 1 MHz

C

iss

- 60 80

pF

Output capacitance

V

GS = 0 V,

V

DS = 25 V,

f

= 1 MHz

C

oss

- 15 25

Reverse transfer capacitance

V

GS = 0 V,

V

DS = 25 V,

f

= 1 MHz

C

rss

- 15 25

Turn-on delay time

V

DD = 30 V,

V

GS = 10 V,

I

D = 0.29 A

R

GS = 50

Ω

t

d(on)

- 5 8

ns

Rise time

V

DD = 30 V,

V

GS = 10 V,

I

D = 0.29 A

R

GS = 50

Ω

t

r

- 5 8

Turn-off delay time

V

DD = 30 V,

V

GS = 10 V,

I

D = 0.29 A

R

GS = 50

Ω

t

d(off)

- 12 16

Fall time

V

DD = 30 V,

V

GS = 10 V,

I

D = 0.29 A

R

GS = 50

Ω

t

f

- 13 17

SN 7002

Data Sheet 4 05.99

Electrical Characteristics, at

T

j = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current

T

A = 25 ˚C

I

S

- - 0.19

A

Inverse diode direct current,pulsed

T

A = 25 ˚C

I

SM

- - 0.76

Inverse diode forward voltage

V

GS = 0 V,

I

F = 0.5 A,

T

j = 25 ˚C

V

SD

- 1 1.2

V

SN 7002

Data Sheet 5 05.99

Power dissipation

P

tot =

ƒ

(

T

A)

020 40 60 80 100 120 ˚C 160

T

A

0.00

0.04

0.08

0.12

0.16

0.20

0.24

0.28

0.32

W

0.40

P

tot

Drain current

I

D =

ƒ

(

T

A)

parameter:

V

GS

≥

10 V

020 40 60 80 100 120 ˚C 160

T

A

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

A

0.20

I

D

Safe operating area

I

D=f(

V

DS)

parameter :

D

= 0.01,

T

C=25˚C

Drain-source breakdown voltage

V

(BR)DSS =

ƒ

(

T

j)

-60 -20 20 60 100 ˚C 160

T

j

54

56

58

60

62

64

66

68

V

71

V

(BR)DSS

SN 7002

Data Sheet 6 05.99

Typ. output characteristics

I

D =

ƒ(

V

DS)

parameter:

t

p = 80 µs ,

T

j = 25 ˚C

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V5.0

V

DS

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

A

0.45

I

D

V

GS [V]

a

a 2.0

b

b 2.5

c

c 3.0

d

d 3.5

e

e 4.0

f

f 4.5

g

g 5.0

h

h 6.0

i

i 7.0

j

j 8.0

k

k 9.0

l

P

tot = 0W

l 10.0

Typ. drain-source on-resistance

R

DS (on) =

ƒ(

I

D)

parameter:

t

p = 80 µs,

T

j = 25 ˚C

0.00 0.04 0.08 0.12 0.16 A0.24

I

D

0

2

4

6

8

10

12

Ω

16

R

DS (on)

V

GS [V] =

a

a

2.0 b

b

2.5

c

c

3.0

d

d

3.5

e

e

4.0

f

f

4.5

g

g

5.0

h

h

6.0

i

i

7.0

j

j

8.0

kk

9.0

ll

10.0

Typ. transfer characteristics

I

D

= f

(

V

GS)

parameter:

t

p = 80 µs

0 1 2 3 4 5 6 7 8 V 10

V

GS

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

A

1.1

I

D

Typ. forward transconductance

g

fs =

f

(

I

D)

parameter:

t

p = 80 µs,

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 A1.0

I

D

0.00

0.05

0.10

0.15

0.20

0.25

0.30

S

0.40

g

fs

SN 7002

Data Sheet 7 05.99

Drain-source on-resistance

R

DS (on) =

ƒ

(

T

j)

parameter:

I

D = 0.5 A,

V

GS = 10 V

-60 -20 20 60 100 ˚C 160

T

j

0

2

4

6

8

10

12

Ω

16

R

DS (on)

typ

98%

Gate threshold voltage

V

GS (th) =

ƒ

(

T

j)

parameter:

V

GS =

V

DS,

I

D = 1 mA

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

V

4.6

V

GS(th)

-60 -20 20 60 100 ˚C 160

T

j

2%

typ

98%

Typ. capacitances

C

=

f

(

V

DS)

parameter:

V

GS=0V,

f

= 1 MHz

0 5 10 15 20 25 30 V40

V

DS

0

10

1

10

2

10

3

10

pF

C

C

rss

C

oss

C

iss

Forward characteristics of reverse diode

I

F =

ƒ

(

V

SD)

parameter:

T

j

, t

p = 80 µs

-3

10

-2

10

-1

10

0

10

A

I

F

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0

V

SD

T

j = 25 ˚C typ

T

j = 25 ˚C (98%)

T

j = 150 ˚C typ

T

j = 150 ˚C (98%)