SPA17N80C3, SPP17N80C3 Datasheet. Www.s Manuals.com. Infineon
User Manual: Marking of electronic components, SMD Codes 17005E, 17006E, 17015E, 1714, 1714I, 17C, 17N80C3, 17T, 17s. Datasheets BAS125-07, BZT52-C17, BZX84C17-AU, LT1714CGN, LT1714IGN, MAX17005ETP, MAX17006ETP, MAX17015ETP, SPA17N80C3, SPP17N80C3, TK71517AS.
Open the PDF directly: View PDF 
.
Page Count: 14
| Download | |
| Open PDF In Browser | View PDF |
SPP17N80C3 SPA17N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS(on) 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 1 • Ultra low effective capacitances 2 3 P-TO220-3-31 • Improved transconductance • PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type Package Ordering Code Marking SPP17N80C3 PG-TO220 Q67040-S4353 17N80C3 SPA17N80C3 PG-TO220-3-31 SP000216353 17N80C3 Maximum Ratings Parameter Symbol Value SPP Continuous drain current Unit SPA ID A TC = 25 °C 17 17 1) TC = 100 °C 11 11 1) 51 51 Pulsed drain current, tp limited by Tjmax ID puls A Avalanche energy, single pulse EAS 670 670 EAR 0.5 0.5 Avalanche current, repetitive tAR limited by Tjmax IAR 17 17 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 208 42 Operating and storage temperature Tj , Tstg mJ ID=3.4A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=17A, VDD=50V Rev. 2.7 Page 1 -55...+150 W °C 2011-09-27 SPP17N80C3 SPA17N80C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit VDS = 640 V, ID = 17 A, Tj = 125 °C Thermal Characteristics Parameter Symbol min. typ. max. Thermal resistance, junction - case RthJC - - 0.6 Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.6 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 3) - 35 - - - 260 Soldering temperature, wavesoldering Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s 4) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=17A Values Unit min. typ. max. 800 - - - 870 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=1000µA, VGS=VDS Zero gate voltage drain current I DSS VDS=800V, V GS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.7 RG µA Tj=25°C - 0.5 25 Tj=150°C - - 250 VGS=20V, V DS=0V - - 100 Ω VGS=10V, ID=11A Tj=25°C - 0.25 0.29 Tj=150°C - 0.78 - f=1MHz, open drain - 0.7 - Page 2 nA 2011-09-27 SPP17N80C3 SPA17N80C3 Electrical Characteristics Parameter Transconductance Symbol gfs Conditions VDS≥2*ID*R DS(on)max, Values Unit min. typ. max. - 15 - S pF ID=11A Input capacitance Ciss VGS=0V, VDS=25V, - 2320 - Output capacitance Coss f=1MHz - 1250 - Reverse transfer capacitance Crss - 60 - - 59 - - 124 - Effective output capacitance,5) Co(er) VGS=0V, energy related VDS=0V to 480V Effective output capacitance,6) Co(tr) time related Turn-on delay time td(on) VDD=400V, VGS=0/10V, - 25 - Rise time tr ID=17A, - 15 - Turn-off delay time td(off) RG =4.7Ω, Tj =125°C - 72 82 Fall time tf - 6 9 - 12 - - 46 - - 91 177 - 6 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=640V, ID=17A VDD=640V, ID=17A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=640V, ID=17A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220°C, reflow 5C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 6C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Rev. 2.7 Page 3 2011-09-27 SPP17N80C3 SPA17N80C3 Electrical Characteristics Parameter Symbol Inverse diode continuous IS Conditions Values Unit min. typ. max. - - 17 - - 51 TC=25°C A forward current Inverse diode direct current, I SM pulsed Inverse diode forward voltage VSD VGS =0V, IF=IS - 1 1.2 V Reverse recovery time t rr VR =400V, IF =IS , - 550 - ns Reverse recovery charge Q rr diF/dt=100A/µs - 15 - µC Peak reverse recovery current I rrm - 51 - A Peak rate of fall of reverse dirr /dt - 1200 - A/µs Tj=25°C recovery current Typical Transient Thermal Characteristics Symbol Value Unit SPP SPA Rth1 0.00812 0.00812 Rth2 0.016 Rth3 Symbol Value Unit SPP SPA Cth1 0.0003562 0.0003562 0.016 Cth2 0.001337 0.001337 0.031 0.031 Cth3 0.001831 0.001831 Rth4 0.114 0.16 Cth4 0.005033 0.005033 Rth5 0.135 0.324 Cth5 0.012 0.008657 Rth6 0.059 2.522 Cth6 0.092 0.412 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.7 Page 4 2011-09-27 SPP17N80C3 SPA17N80C3 1 Power dissipation 2 Power dissipation FullPAK Ptot = f (TC) Ptot = f (TC) 240 SPP17N80C3 45 W W 200 35 160 Ptot Ptot 180 140 30 25 120 20 100 15 80 60 10 40 5 20 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TC 3 Safe operating area 4 Safe operating area FullPAK ID = f ( VDS ) ID = f (VDS) parameter : D = 0 , TC=25°C parameter: D = 0, TC = 25°C 10 2 °C 160 TC 10 2 10 1 10 1 ID A ID A 10 0 10 -1 10 -2 0 10 Rev. 2.7 10 0 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 1 10 -1 10 2 10 V VDS 3 Page 5 10 -2 0 10 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 1 10 2 10 V VDS 2011-09-27 3 SPP17N80C3 SPA17N80C3 5 Transient thermal impedance 6 Transient thermal impedance FullPAK ZthJC = f (tp) ZthJC = f (tp) parameter: D = tp/T parameter: D = tp/t 10 1 10 1 K/W K/W 10 0 ZthJC ZthJC 10 0 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 -3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 -3 10 10 -4 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 -1 tp 7 Typ. output characteristic 8 Typ. output characteristic ID = f (VDS); Tj =25°C ID = f (VDS); Tj =150°C parameter: tp = 10 µs, VGS parameter: tp = 10 µs, VGS 35 70 A 20V 10V 60 20V 10V 8V 7V A 55 25 45 6.5V 6V ID 50 ID 1 s 10 8V 20 40 7V 35 5.5V 15 30 25 6V 5V 10 20 15 4.5V 5V 10 5 4V 5 0 0 Rev. 2.7 5 10 15 20 VDS 0 0 30 V Page 6 5 10 15 20 VDS 30 V 2011-09-27 SPP17N80C3 SPA17N80C3 9 Typ. drain-source on resistance 10 Drain-source on-state resistance RDS(on)=f(ID) RDS(on) = f (Tj) parameter: Tj=150°C, VGS parameter : ID = 11 A, VGS = 10 V 1.5 1.6 Ω SPP17N80C3 Ω RDS(on) RDS(on) 1.3 1.2 1.1 4V 4.5V 5V 5.5V 6V 6.5V 1 1.2 1 0.8 0.9 0.6 7V 8V 10V 20V 0.8 0.7 0.4 98% typ 0.2 0.6 0.5 0 5 10 15 20 25 0 -60 35 A -20 20 60 °C 100 ID Tj 11 Typ. transfer characteristics 12 Typ. gate charge ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max VGS = f (Q Gate) parameter: ID = 17 A pulsed parameter: tp = 10 µs 65 16 A 50 12 VGS 45 ID SPP17N80C3 V 25°C 55 180 40 35 150°C 0,2 VDS max 10 0,8 VDS max 8 30 25 6 20 4 15 10 2 5 0 0 Rev. 2.7 2 4 6 8 10 12 14 16 0 0 V 20 VGS 20 40 60 80 100 120 nC 160 QGate Page 7 2011-09-27 SPP17N80C3 SPA17N80C3 13 Forward characteristics of body diode 14 Avalanche SOA IF = f (VSD) IAR = f (tAR) parameter: Tj , tp = 10 µs par.: Tj ≤ 150 °C 10 2 SPP17N80C3 18 A A 14 IF IAR 10 1 12 10 8 10 0 6 Tj = 25 °C typ T j(START)=25°C Tj = 150 °C typ 4 Tj = 25 °C (98%) 2 Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V T j(START)=125°C 0 -3 10 3 10 -2 10 -1 10 0 10 1 10 2 µs 10 tAR VSD 15 Avalanche energy 16 Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj) 4 par.: ID = 3.4 A, VDD = 50 V 700 980 600 940 550 920 V V(BR)DSS E AS mJ 500 450 400 900 880 860 350 840 300 820 250 800 200 780 150 100 760 50 740 0 25 50 75 100 720 -60 150 °C Tj Rev. 2.7 SPP17N80C3 -20 20 60 100 °C 180 Tj Page 8 2011-09-27 SPP17N80C3 SPA17N80C3 17 Avalanche power losses 18 Typ. capacitances PAR = f (f ) C = f (VDS) parameter: EAR =0.5mJ parameter: VGS =0V, f=1 MHz 10 5 500 pF W 10 4 400 C PAR Ciss 350 300 10 3 250 10 2 200 Coss 150 10 1 100 Crss 50 0 4 10 10 5 6 10 Hz f 10 0 0 100 200 300 400 500 600 800 V VDS 19 Typ. Coss stored energy Eoss=f(VDS) 18 µJ E oss 14 12 10 8 6 4 2 0 0 Rev. 2.7 100 200 300 400 500 600 800 V VDS Page 9 2011-09-27 SPP17N80C3 SPA17N80C3 Definition of diodes switching characteristics Rev. 2.7 Page 10 201109-27 SPP17N80C3 SPA17N80C3 PG-TO220-3-1, PG-TO220-3-21 Rev. 2.7 Page 11 2011-09-27 SPP17N80C3 SPA17N80C3 PG-TO220-3-31 (FullPAK) Rev. 2.7 Page 12 2011-09-27 SPP17N80C3 SPA17N80C3 Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.7 Page 13 2011-09-27 www.s-manuals.com
Source Exif Data:
File Type : PDF File Type Extension : pdf MIME Type : application/pdf PDF Version : 1.4 Linearized : No XMP Toolkit : Adobe XMP Core 4.0-c316 44.253921, Sun Oct 01 2006 17:14:39 Producer : Acrobat Distiller 5.0.5 (Windows) Creation Date--Text : D:00000000000000Z Creator Tool : PScript5.dll Version 5.2 Create Date : 0000:00:00T00:00:00Z: 5 Modify Date : 2012:12:01 15:53:52+02:00 Metadata Date : 2012:12:01 15:53:52+02:00 Format : application/pdf Title : SPA17N80C3, SPP17N80C3 - Datasheet. www.s-manuals.com. Creator : Subject : SPA17N80C3, SPP17N80C3 - Datasheet. www.s-manuals.com. Document ID : uuid:bdbb0d56-ecc9-4996-a978-3fa9716450e9 Instance ID : uuid:941159b1-2df4-4589-9cb0-358d9eb4bb3b Page Count : 14 Keywords : SPA17N80C3, SPP17N80C3 - Datasheet. www.s-manuals.com. Warning : [Minor] Ignored duplicate Info dictionaryEXIF Metadata provided by EXIF.tools