SPA17N80C3, SPP17N80C3 Datasheet. Www.s Manuals.com. Infineon

User Manual: Marking of electronic components, SMD Codes 17005E, 17006E, 17015E, 1714, 1714I, 17C, 17N80C3, 17T, 17s. Datasheets BAS125-07, BZT52-C17, BZX84C17-AU, LT1714CGN, LT1714IGN, MAX17005ETP, MAX17006ETP, MAX17015ETP, SPA17N80C3, SPP17N80C3, TK71517AS.

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Rev. 2.7 Page 1 2011-09-27

SPP17N80C3

SPA17N80C3

Cool MOS™ Power Transistor VDS 800 V

RDS

(

on

)

0.29 Ω

ID17 A

Feature

• New revolutionary high voltage technology

• Worldwide best RDS

(

on

)

in TO 220

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dtrated

• Ultra low effective capacitances

• Improved transconductance

• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

PG-TO220-3-31 PG-TO220

P-TO220-3-31

123

Marking

17N80C3

17N80C3

Type Package Ordering Code

SPP17N80C3 PG-TO220 Q67040-S4353

SPA17N80C3 PG-TO220-3-31 SP000216353

Maximum Ratings

Parameter Symbol Value Unit

SPA

Continuous drain current

T

C = 25 °C

TC = 100 °C

ID

17

11

171)

111)

A

Pulsed drain current, t

p

limited by T

j

max ID

p

uls 51 51 A

Avalanche energy, single pulse

ID=3.4A, VDD=50V

EAS 670 670 mJ

Avalanche energy, repetitive tAR limited by Tjmax2)

ID=17A, VDD=50V

EAR 0.5 0.5

Avalanche current, repetitive t

A

R limited by T

j

max I

A

R17 17 A

Gate source voltage VGS ±20 ±20 V

Gate source voltage AC (f >1Hz) VGS ±30 ±30

Power dissipation, TC = 25°C Ptot 208 42 W

SPP

Operating and storage temperature T

j

,Tst

g

-55...+150 °C

Rev. 2.7 Page 2 2011-09-27

SPP17N80C3

SPA17N80C3

Maximum Ratings

Parameter Symbol Value Unit

Drain Source voltage slope

VDS = 640 V, ID = 17 A, Tj = 125 °C

dv/dt50 V/ns

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Thermal resistance, junction - case RthJC - - 0.6 K/W

Thermal resistance, junction - case, FullPAK RthJC

_

FP - - 3.6

Thermal resistance, junction - ambient, leaded RthJA - - 62

Thermal resistance, junction - ambient, FullPAK RthJA

_

FP - - 80

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 3)

RthJA

-

-

-

35

62

-

Soldering temperature, wavesoldering

1.6 mm (0.063 in.) from case for 10s 4)

Tsold - - 260 °C

Electrical Characteristics, at T

j

=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 800 - - V

Drain-Source avalanche

breakdown voltage

V(BR)DS VGS=0V, ID=17A - 870 -

Gate threshold voltage VGS

(

th

)

ID=1000µA, VGS=VD

S

2.1 3 3.9

Zero gate voltage drain current IDSS VDS=800V, VGS=0V,

Tj=25°C

Tj=150°C

-

-

0.5

-

25

250

µA

Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA

Drain-source on-state resistance RDS(on) VGS=10V, ID=11A

Tj=25°C

Tj=150°C

-

-

0.25

0.78

0.29

-

Ω

Gate input resistance RGf=1MHz, open drain - 0.7 -

Rev. 2.7 Page 3 2011-09-27

SPP17N80C3

SPA17N80C3

Electrical Characteristics

Parameter Symbol Conditions Values Unit

min. typ. max.

Transconductance gfs VDS≥2*ID*RDS(on)max,

ID=11A

- 15 - S

Input capacitance Ciss VGS=0V, VDS=25V,

f=1MHz

- 2320 - pF

Output capacitance Coss - 1250 -

Reverse transfer capacitance Crss - 60 -

Effective output capacitance,5)

energy related

Co(er) VGS=0V,

VDS=0V to 480V

- 59 -

Effective output capacitance,6)

time related

Co(tr) - 124 -

Turn-on delay time td(on) VDD=400V, VGS=0/10V,

ID=17A,

RG=4.7Ω,Tj=125°C

- 25 - ns

Rise time tr- 15 -

Turn-off delay time td(off) - 72 82

Fall time tf- 6 9

Gate Charge Characteristics

Gate to source charge Qgs VDD=640V, ID=17A - 12 - nC

Gate to drain charge Qgd - 46 -

Gate charge total QgVDD=640V, ID=17A,

VGS=0 to 10V

- 91 177

Gate plateau voltage V

(

plateau

)

VDD=640V, ID=17A - 6 - V

1Limited only by maximum temperature

2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.

3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

4Soldering temperature for TO-263: 220°C, reflow

5Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

6Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

Rev. 2.7 Page 4 2011-09-27

SPP17N80C3

SPA17N80C3

Electrical Characteristics

Parameter Symbol Conditions Values Unit

min. typ. max.

Inverse diode continuous

forward current

ISTC=25°C - - 17 A

Inverse diode direct current,

pulsed

ISM - - 51

Inverse diode forward voltage VSD VGS=0V, IF=IS- 1 1.2 V

Reverse recovery time trr VR=400V, IF=IS ,

diF/dt=100A/µs

- 550 - ns

Reverse recovery charge Qrr - 15 - µC

Peak reverse recovery current Irrm - 51 - A

Peak rate of fall of reverse

recovery current

dirr/dt Tj=25°C - 1200 - A/µs

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

SPA SPA

Rth1 0.00812 0.00812 K/W Cth1 0.0003562 0.0003562 Ws/K

Rth2 0.016 0.016 Cth2 0.001337 0.001337

Rth3 0.031 0.031 Cth3 0.001831 0.001831

Rth4 0.114 0.16 Cth4 0.005033 0.005033

Rth5 0.135 0.324 Cth5 0.012 0.008657

Rth6 0.059 2.522 Cth6 0.092 0.412

SPP SPP

External Heatsink

TjTcase

Tamb

Cth1 Cth2

Rth1 Rth,n

Cth,n

Ptot (t)

Rev. 2.7 Page 5 2011-09-27

SPP17N80C3

SPA17N80C3

1 Power dissipation

Ptot = f(TC)

0 20 40 60 80 100 120 °C 160

TC

0

20

40

60

80

100

120

140

160

180

200

W

240 SPP17N80C3

Ptot

2 Power dissipation FullPAK

Ptot = f(TC)

0 20 40 60 80 100 120 °C 160

TC

0

5

10

15

20

25

30

35

W

45

Ptot

3 Safe operating area

ID= f ( VDS )

parameter : D = 0 , TC=25°C

10 010 110 210 3

V

VDS

-2

10

-1

10

0

10

1

10

2

10

A

ID

tp = 0.001 ms

tp = 0.01 ms

tp = 0.1 ms

tp = 1 ms

DC

4 Safe operating area FullPAK

ID = f (VDS)

parameter: D = 0, TC = 25°C

10 010 110 210 3

V

VDS

-2

10

-1

10

0

10

1

10

2

10

A

ID

tp = 0.001 ms

tp = 0.01 ms

tp = 0.1 ms

tp = 1 ms

tp = 10 ms

DC

Rev. 2.7 Page 6 2011-09-27

SPP17N80C3

SPA17N80C3

5 Transient thermal impedance

ZthJC = f(tp)

parameter: D=tp/T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -1

s

tp

-4

10

-3

10

-2

10

-1

10

0

10

1

10

K/W

ZthJC

D = 0.5

D = 0.2

D = 0.1

D = 0.05

D = 0.02

D = 0.01

single pulse

6 Transient thermal impedance FullPAK

ZthJC = f(tp)

parameter: D = tp/t

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1

s

tp

-4

10

-3

10

-2

10

-1

10

0

10

1

10

K/W

ZthJC

D = 0.5

D = 0.2

D = 0.1

D = 0.05

D = 0.02

D = 0.01

single pulse

7 Typ. output characteristic

ID = f (VDS); Tj=25°C

parameter: tp= 10 µs, VGS

0 5 10 15 20 VDS 30

V

0

5

10

15

20

25

30

35

40

45

50

55

60

A

70

ID

5V

6V

7V

8V

20V

10V

8 Typ. output characteristic

ID = f (VDS); Tj=150°C

parameter: tp= 10 µs, VGS

0 5 10 15 20 VDS 30

V

0

5

10

15

20

25

A

35

ID

4V

4.5V

5V

5.5V

6V

6.5V

20V

10V

8V

7V

Rev. 2.7 Page 7 2011-09-27

SPP17N80C3

SPA17N80C3

9 Typ. drain-source on resistance

RDS(on)=f(ID)

parameter: Tj=150°C, VGS

0 5 10 15 20 25 A 35

ID

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

Ω

1.5

RDS(on)

4V 4.5V 5V 5.5V 6V 6.5V

7V

8V

10V

20V

10 Drain-source on-state resistance

RDS(on) = f(Tj)

parameter : ID = 11 A, VGS = 10 V

-60 -20 20 60 100 °C 180

Tj

0

0.2

0.4

0.6

0.8

1

1.2

Ω

1.6 SPP17N80C3

RDS(on)

typ

98%

11 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: tp = 10 µs

0 2 4 6 8 10 12 14 16 V 20

VGS

0

5

10

15

20

25

30

35

40

45

50

55

A

65

ID

25°C

150°C

12 Typ. gate charge

VGS =f (QGate)

parameter: ID = 17 A pulsed

0 20 40 60 80 100 120 nC 160

QGate

0

2

4

6

8

10

12

V

16 SPP17N80C3

VGS

0,8 VDS max

DS max

V

0,2

Rev. 2.7 Page 8 2011-09-27

SPP17N80C3

SPA17N80C3

13 Forward characteristics of body diode

IF = f (VSD)

parameter: T

j

, tp= 10 µs

0 0.4 0.8 1.2 1.6 2 2.4 V3

VSD

-1

10

0

10

1

10

2

10

A

SPP17N80C3

IF

Tj = 25 °C typ

Tj = 25 °C (98%)

Tj = 150 °C typ

Tj = 150 °C (98%)

14 Avalanche SOA

IAR = f (tAR)

par.: Tj≤ 150 °C

10 -3 10 -2 10 -1 10 010 110 210 4

µs

tAR

0

2

4

6

8

10

12

14

A

18

IAR

Tj(START)=125°C

Tj(START)=25°C

15 Avalanche energy

EAS = f(Tj)

par.: ID = 3.4 A, VDD = 50 V

25 50 75 100 °C 150

Tj

0

50

100

150

200

250

300

350

400

450

500

550

600

mJ

700

EAS

16 Drain-source breakdown voltage

V(BR)DSS = f(Tj)

-60 -20 20 60 100 °C 180

Tj

720

740

760

780

800

820

840

860

880

900

920

940

V

980 SPP17N80C3

V(BR)DSS

Rev. 2.7 Page 9 2011-09-27

SPP17N80C3

SPA17N80C3

17 Avalanche power losses

PAR = f (f )

parameter: EAR=0.5mJ

10 410 510 6

Hz

f

0

50

100

150

200

250

300

350

400

W

500

PAR

18 Typ. capacitances

C = f(VDS)

parameter: VGS=0V, f=1 MHz

0 100 200 300 400 500 600 V 800

VDS

0

10

1

10

2

10

3

10

4

10

5

10

pF

C

Ciss

Coss

Crss

19 Typ. Coss stored energy

Eoss=f(VDS)

0 100 200 300 400 500 600 V 800

VDS

0

2

4

6

8

10

12

14

µJ

18

Eoss

Rev. 2.7 Page 10 201109-27

SPP17N80C3

SPA17N80C3

Definition of diodes switching characteristics

2011-09-27

Rev. 2.7 Page 11

SPP17N80C3

SPA17N80C3

PG-TO220-3-1, PG-TO220-3-21

2011-09-27

Rev. 2.7 Page 12

SPP17N80C3

SPA17N80C3

PG-TO220-3-31 (FullPAK)

Rev. 2.7 Page 13 2011-09-27

SPP17N80C3

SPA17N80C3

Published by

Infineon Technologies AG

81726 Munich, Germany

© 2007 Infineon Technologies AG

All Rights Reserved.

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