SS8550 Datasheet. Www.s Manuals.com. Galaxy
User Manual: Marking of electronic components, SMD Codes Y2, Y2-, Y20, Y21, Y23, Y2D, Y2W, Y2Y, Y2p, Y2t. Datasheets BZX84-C12, BZX84-C68, BZX84-C75, BZX84C12, BZX84C12-V, BZX84C12LT1G, BZX84C68, BZX84C68-V, BZX84C68LT1G, BZX84C75, BZX84C75-V, BZX84C75LT1G, CMSZDA12V, DTD513ZE, DTD513ZM, DTD543ZE, DTD543ZM, M8550, MMBT8550, PXT8550, PZU16B2A/DG, SS8550, SS8550W, SZBZX84C12LT1G, SZBZX84C68LT1G, SZBZX84C75LT1G.
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BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES SS8550 Pb z Collector Current.(IC= 1.5A） z Complementary To SS8550. z Collector Dissipation: PC=0.3W (TC=25°C) Lead-free APPLICATIONS z High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code SS8550 Y2 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Dissipation 0.3 W Tj,Tstg Junction and Storage Temperature -55~150 ℃ Document number: BL/SSSTC087 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor SS8550 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA,IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-40V,IE=0 -0.1 μA Collector cut-off current ICEO VCE=-20V,IB=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain hFE VCE=-1V,IC=-100mA 120 VCE=-1V,IC=-800mA 40 TYP MAX UNIT 400 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB= -80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB= -80mA -1.2 V Transition frequency fT VCE=-10V, IC= -50mA f=30MHz Output capacitance Cob VCB=-10V,IE=0,f=1MHz 20 pF Base-emitter voltage VBEF IE=-1.5A -1.6 V CLASSIFICATION OF Rank Range Document number: BL/SSSTC087 Rev.A 100 MHz hFE(1) L H J 120-200 200-350 300-400 www.galaxycn.com 2 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor SS8550 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC087 Rev.A www.galaxycn.com 3 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor SS8550 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 Dim Min Max A 2.85 2.95 B 1.25 1.35 C 1.0Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J K 0.1Typical 2.35 2.45 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping SS8550 SOT-23 3000/Tape&Reel Document number: BL/SSSTC087 Rev.A www.galaxycn.com 4 www.s-manuals.com
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