SS8550 Datasheet. Www.s Manuals.com. Galaxy
User Manual: Marking of electronic components, SMD Codes Y2, Y2-, Y20, Y21, Y23, Y2D, Y2W, Y2Y, Y2p, Y2t. Datasheets BZX84-C12, BZX84-C68, BZX84-C75, BZX84C12, BZX84C12-V, BZX84C12LT1G, BZX84C68, BZX84C68-V, BZX84C68LT1G, BZX84C75, BZX84C75-V, BZX84C75LT1G, CMSZDA12V, DTD513ZE, DTD513ZM, DTD543ZE, DTD543ZM, M8550, MMBT8550, PXT8550, PZU16B2A/DG, SS8550, SS8550W, SZBZX84C12LT1G, SZBZX84C68LT1G, SZBZX84C75LT1G.
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BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor SS8550
Document number: BL/SSSTC087 www.galaxycn.com
Rev.A 1
FEATURES
z Collector Current.(IC= 1.5A）
z Complementary To SS8550.
z Collector Dissipation: PC=0.3W (TC=25°C)
APPLICATIONS
z High Collector Current.
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
SS8550 Y2 SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -1.5 A
PC Collector Dissipation 0.3 W
Tj,Tstg Junction and Storage Temperature -55~150 ℃
Pb
Lead-free
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor SS8550
Document number: BL/SSSTC087 www.galaxycn.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO I
C=-0.1mA,IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO I
E=-100μA,IC=0 -5
V
Collector cut-off current ICBO VCB=-40V,IE=0 -0.1 μA
Collector cut-off current ICEO VCE=-20V,IB=0 -0.1 μA
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA
VCE=-1V,IC=-100mA 120 400
DC current gain hFE VCE=-1V,IC=-800mA 40
Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB= -80mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-800mA, IB= -80mA -1.2 V
Transition frequency fT
VCE=-10V, IC= -50mA
f=30MHz 100 MHz
Output capacitance Cob VCB=-10V,IE=0,f=1MHz 20 pF
Base-emitter voltage VBEF IE=-1.5A -1.6 V
CLASSIFICATION OF hFE(1)
Rank L H J
Range 120-200 200-350 300-400
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor SS8550
Document number: BL/SSSTC087 www.galaxycn.com
Rev.A 3
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor SS8550
Document number: BL/SSSTC087 www.galaxycn.com
Rev.A 4
PACKAGE OUTLINE
Plastic surface mounted package SOT-23
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
SOT-23
Dim Min Max
A 2.85 2.95
B 1.25 1.35
C 1.0Typical
D 0.37 0.43
E 0.35 0.48
G 1.85 1.95
H 0.02 0.1
J 0.1Typical
K 2.35 2.45
All Dimensions in mm
Device Package Shipping
SS8550 SOT-23 3000/Tape&Reel
