US6K4 Datasheet. Www.s Manuals.com. Rohm

User Manual: Marking of electronic components, SMD Codes K0, K0-***, K01, K02, K0355, K0389, K0390, K0391, K0392, K0393, K0394, K0395, K0396, K0397, K03B7, K03B8, K03B9, K04, K06, K0=***. Datasheets BST86, EM6K6, QS5K2, QS6K1, RJK0355DPA, RJK0389DPA, RJK0390DPA, RJK0391DPA, RJK0392DPA, RJK0393DPA, RJK0394DPA, RJK0395DPA, RJK0396DPA, RJK0397DPA, RJK03B7DPA, RJK03B8DPA, RJK03B9DPA, RT9818C-29GVL, RT9818C-29PVL, US6K1, US6K2, US6K4.

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US6K4
Transistors

1.8V Drive Nch+Nch MOSFET
US6K4
zStructure
Silicon N-channel MOSFET

zDimensions (Unit : mm)
TUMT6

0.2Max.

zFeatures
1) Two Nch MOSFETs are put in TUMT6 package.
2) High-speed switching, Low On-resistance.
3) 1.8V drive.

Abbreviated symbol : K04

zApplications
Switching
zPackaging specifications

zInner circuit

Package
Type

(6)

Taping

(5)

(4)

TR

Code
Basic ordering unit (pieces)

3000

∗1

US6K4

∗2

∗2
∗1

(1)

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage
Continuous
Pulsed
Continuous
Pulsed

Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature

(2)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD

∗2

Tch
Tstg

Limits
20
±10
±1.5
±3.0
0.6
2.4
1.0
0.7
150
−55 to +150

Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C

Limits
125
179

Unit
°C/W / TOTAL
°C/W / ELEMENT

(3)

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

zThermal resistance
Parameter
Channel to ambient

Symbol
Rth(ch-a) ∗

∗ Mounted on a ceramic board

Rev.A

1/3

US6K4
Transistors
zElectrical characteristics (Ta=25°C)

Parameter

Symbol

IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

RDS (on)∗

Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd

∗

∗
∗
∗
∗
∗
∗
∗

Min.
−
20
−
0.3
−
−
−
1.6
−
−
−
−
−
−
−
−
−
−

Typ.

Max.

−
−
−
−
130
170
220
−
110
18
15
5
5
20
3
1.8
0.3
0.3

±10
−
1
1.0
180
240
310
−
−
−
−
−
−
−
−
2.5
−
−

Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC

Conditions
VGS=±10V, VDS=0V
ID= 1mA, VGS=0V
VDS= 20V, VGS=0V
VDS= 10V, ID= 1mA
ID= 1.5A, VGS= 4.5V
ID= 1.5A, VGS= 2.5V
ID= 0.8A, VGS= 1.8V
VDS= 10V, ID= 1.5A
VDS= 10V
VGS=0V
f=1MHz
ID= 1.0A
VDD 10V
VGS= 4.5V
RL= 10Ω
RGS=10Ω
VDD 10V
VGS= 4.5V
ID= 1.5A

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter
Forward voltage

Symbol

Min.

Typ.

Max.

VSD

−

−

1.2

Unit
V

Conditions
IS= 0.6A, VGS=0V

Rev.A

2/3

US6K4
Transistors
zElectrical characteristics curves
1000

Ta=25°C
VDD=10V
VGS=4.5V
RG=10Ω
Pulsed

SWITCHING TIME : t (ns)

Ciss

100

100

tf

td(off)

10

td(on)

tr

Coss
Crss

0.1

1

10

1
0.01

100

0.1

1

VDS=10V
Pulsed

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (mΩ)

DRAIN CURRENT : ID (A)

10

Ta=125°C
75°C
25°C
−25°C

0.1

0.01

0.001

0.0001
0.0

0.5

1.0

1.5

2.0

100

1

DRAIN CURRENT : ID (A)

Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )

0
0.0 0.2

Fig.2 Switching Characteristics

Fig.3 Dynamic Input Characteristics

10

10

VGS=0V
Pulsed

Ta=25°C
Pulsed

400
350
300
ID=1.5A

250
200
150

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

TOTAL GATE CHARGE : Qg (nC)

ID=0.8A

100

Ta=125°C
75°C

1

25°C
−25°C

0.1

50
0
0

1

2

3

4

5

6

7

8

9

10

0.01
0.0

1000

VGS=2.5V
Pulsed

Ta=125°C
75°C
25°C
−25°C

100

10
0.01

0.1

1

0.5

1.5

Fig.6 Source Current vs.
Source-Drain Voltage

10

1000

VGS=4.5V
Pulsed

Ta=125°C
75°C
25°C
−25°C

100

10
0.01

0.1

DRAIN CURRENT : ID (A)

Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )

1.0

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-source Voltage

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)

VGS=1.8V
Pulsed

0.1

1

GATE-SOURCE VOLTAGE : VGS (V)

25°C
−25°C

10
0.01

2

10

450

Fig.4 Typical Transfer Characteristics

Ta=125°C
75°C

3

500

GATE-SOURCE VOLTAGE : VGS (V)

1000

Ta=25°C
VDD=10V
ID=1.5A
4 RG=10Ω
Pulsed

DRAIN CURRENT : ID (A)

DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.1 Typical Capacitance
vs. Drain-Source Voltage

1

SOURCE CURRENT : IS (A)

10
0.01

5

STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)

CAPACITANCE : C (pF)

Ta=25°C
f=1MHz
VGS=0V

GATE-SOURCE VOLTAGE : VGS (V)

1000

1

10

DRAIN CURRENT : ID (A)

Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙΙ )

zNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.

Rev.A

3/3

Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.

Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.

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