US6K4 Datasheet. Www.s Manuals.com. Rohm

User Manual: Marking of electronic components, SMD Codes K0, K0-***, K01, K02, K0355, K0389, K0390, K0391, K0392, K0393, K0394, K0395, K0396, K0397, K03B7, K03B8, K03B9, K04, K06, K0=***. Datasheets BST86, EM6K6, QS5K2, QS6K1, RJK0355DPA, RJK0389DPA, RJK0390DPA, RJK0391DPA, RJK0392DPA, RJK0393DPA, RJK0394DPA, RJK0395DPA, RJK0396DPA, RJK0397DPA, RJK03B7DPA, RJK03B8DPA, RJK03B9DPA, RT9818C-29GVL, RT9818C-29PVL, US6K1, US6K2, US6K4.

Open the PDF directly: View PDF .
Page Count: 5

US6K4

Transistors

Rev.A 1/3

1.8V Drive

Nch+Nch

MOSFET

US6K4

zStructure zDimensions (Unit : mm)

Silicon N-channel MOSFET

zFeatures

1) Two Nch MOSFETs are put in TUMT6 package.

2) High-speed switching, Low On-resistance.

3) 1.8V drive.

zApplications

Switching

zPackaging specifications zInner circuit

Package

Code

Taping

Basic ordering unit (pieces)

US6K4

TR

3000

Type

zAbsolute maximum ratings (Ta=25°C)

<It is the same ratings for the Tr1 and Tr2>

∗1

∗2

∗1

Parameter

VV

DSS

Symbol

VVGSS

AID

AIDP

AIS

AISP

W / TOTAL

PD

°CTch

°CTstg

Limits Unit

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipation

Channel temperature

Range of storage temperature

Continuous

Pulsed

Continuous

Pulsed

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

Source current

(Body diode)

20

150

−55 to +150

±10

±1.5

±3.0

0.6

2.4

1.0

W / ELEMENT0.7

zThermal resistance

Parameter

°C/W / TOTAL

Rth(ch-a)

Symbol Limits Unit

Channel to ambient 125

°C/W / ELEMENT179

∗ Mounted on a ceramic board

∗

TUMT6

Abbreviated symbol : K04

0.2Max.

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Drain

(4) Tr2 Source

(5) Tr2 Gate

(6) Tr1 Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

∗2∗2

∗1

∗1

(1)

(6)

(3)

(4)

(2)

(5)

US6K4

Transistors

Rev.A 2/3

zElectrical characteristics (Ta=25°C)

<It is the same characteristics for the Tr1 and Tr2>

Parameter Symbol

I

GSS

Y

fs

Min.

−

Typ. Max. Unit Conditions

V

(BR) DSS

I

DSS

V

GS (th)

R

DS (on)

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

g

Q

gs

Q

gd

∗

∗

∗

∗

∗

∗

∗

∗

∗

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

∗Pulsed

−±10 µAV

GS

=±10V, V

DS

=0V

V

DD

10V

V

GS

=

4.5V

20 −−VI

D

= 1mA, V

GS

=0V

−−1µAV

DS

= 20V, V

GS

=0V

0.3 −1.0 V V

DS

= 10V, I

D

= 1mA

−130 180 I

D

= 1.5A, V

GS

= 4.5V

−170 240 mΩ

mΩ

mΩ

I

D

= 1.5A, V

GS

= 2.5V

−220 310 I

D

= 0.8A, V

GS

= 1.8V

1.6 −−SV

DS

= 10V, I

D

= 1.5A

−110 −pF V

DS

= 10V

−18

15

−pF V

GS

=0V

−

5

−pF f=1MHz

−

5

−ns

−

20

−ns

−

3

−ns

−

1.8

−ns

−

0.3

2.5 nC

−

0.3

−nC

I

D

=

1.5A

−−nC

V

DD

10V

I

D

= 1.0A

V

GS

= 4.5V

R

L

= 10Ω

R

GS

=10Ω

zBody diode characteristics (Source-drain) (Ta=25°C)

<It is the same characteristics for the Tr1 and Tr2>

V

SD

−−1.2 V I

S

= 0.6A, V

GS

=0VForward voltage

Parameter Symbol Min. Typ. Max. Unit Conditions

US6K4

Transistors

Rev.A 3/3

zElectrical characteristics curves

DRAIN-SOURCE VOLTAGE : V

DS

(V)

0.01

10

100

1000

0.1 1 10 100

CAPACITANCE : C (pF)

Fig.1 Typical Capacitance

vs. Drain-Source Voltage

Ta=25°C

f=1MHz

V

GS

=0V

Ciss

Coss

Crss

DRAIN CURRENT : I

D

(A)

0.01

1

10

100

1000

0.1 1 10

SWITCHING TIME : t (ns)

Fig.2 Switching Characteristics

Ta=25°C

VDD=10V

VGS=4.5V

RG=10Ω

Pulsed

tf

td(on)

tr

td(off)

TOTAL GATE CHARGE : Qg (nC)

0.0

0

1

2

3

4

5

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

GATE-SOURCE VOLTAGE : V

GS

(V)

Fig.3 Dynamic Input Characteristics

Ta=25°C

V

DD

=10V

I

D

=1.5A

R

G

=10Ω

Pulsed

GATE-SOURCE VOLTAGE : V

GS

(V)

0.001

0.0001

0.01

0.1

1

10

0.50.0 1.0 1.5 2.0

DRAIN CURRENT : I

D

(A)

Fig.4 Typical Transfer Characteristics

VDS=10V

Pulsed

Ta=125°C

75°C

25°C

−25°C

GATE-SOURCE VOLTAGE : V

GS

(V)

01

0

300

250

200

150

100

50

350

400

450

500

23 10456789

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

DS(on)

(mΩ)

Fig.5 Static Drain-Source

On-State Resistance vs.

Gate-source Voltage

Ta=25°C

Pulsed

I

D

=1.5A

I

D

=0.8A

SOURCE-DRAIN VOLTAGE : V

SD

(V)

0.0

0.01

0.1

1

10

0.5 1.0 1.5

SOURCE CURRENT : I

S

(A)

Fig.6 Source Current vs.

Source-Drain Voltage

V

GS

=0V

Pulsed

Ta=125°C

75°C

25°C

−25°C

DRAIN CURRENT : I

D

(A)

0.01

0.1

10

100

1000

110

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

DS (on)

(mΩ)

Fig.7 Static Drain-Source

On-State Resistance

vs. Drain Current ( Ι )

V

GS

=1.8V

Pulsed

Ta=125°C

−25°C

75°C

25°C

DRAIN CURRENT : I

D

(A)

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

DS (on)

(mΩ)

Fig.8 Static Drain-Source

On-State Resistance

vs. Drain Current ( ΙΙ )

0.01

0.1

10

100

1000

110

V

GS

=2.5V

Pulsed

Ta=125°C

75°C

25°C

−25°C

DRAIN CURRENT : I

D

(A)

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

DS (on)

(mΩ)

Fig.9 Static Drain-Source

On-State Resistance

vs. Drain Current ( ΙΙΙ )

0.01

0.1

10

100

1000

110

V

GS

=4.5V

Pulsed

Ta=125°C

75°C

25°C

−25°C

zNotice

This product might cause chip aging and breakdown under the large electrified environment.

Please consider to design ESD protection circuit.

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

to the use of such devices.

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document are no antiradiation design.

Appendix1-Rev2.0

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact your nearest sales office.

ROHM Customer Support System THE AMERICAS / EUPOPE / ASIA / JAPAN

Contact us : webmaster@ rohm.co.jp

www.rohm.com

Copyright © 2007 ROHM CO.,LTD.

The products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level

of reliability and the malfunction of which would directly endanger human life (such as medical

instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers

and other safety devices), please be sure to consult with our sales representative in advance.

It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance

of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow

for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in

order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM

cannot be held responsible for any damages arising from the use of the products under conditions out of the

range of the specifications or due to non-compliance with the NOTES specified in this catalog.

21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121

FAX : +81-75-315-0172

Appendix

www.s-manuals.com