Fairchild Powertrench Fdd6690A Users Manual 30V N Channel PowerTrench® MOSFET

MOSFET to the manual 005eb275-5b17-48a8-8f21-850e9df126dc

: Fairchild Fairchild-Powertrench-Fdd6690A-Users-Manual-550598 fairchild-powertrench-fdd6690a-users-manual-550598 fairchild pdf

Open the PDF directly: View PDF .
Page Count: 6

Download
Open PDF In Browser	View PDF

FDD6690A
30V N-Channel PowerTrench MOSFET
General Description

Features

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
superior switching performance.

• 46 A, 30 V

Applications

• Fast Switching Speed

• DC/DC converter

• High performance trench technology for extremely
low RDS(ON)

RDS(ON) = 12 mΩ @ VGS = 10 V
RDS(ON) = 14 mΩ @ VGS = 4.5 V

• Low gate charge

• Motor Drives

D

D
G
S

G

D-PAK
TO-252
(TO-252)

S

Absolute Maximum Ratings
Symbol

TA=25oC unless otherwise noted

Ratings

Units

VDSS

Drain-Source Voltage

30

V

VGSS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current @TC=25°C

(Note 3)

46

A

@TA=25°C

(Note 1a)

12

Pulsed

(Note 1a)

100

PD

Parameter

Power Dissipation

TJ, TSTG

@TC=25°C

(Note 3)

56

@TA=25°C

(Note 1a)

3.3

@TA=25°C

(Note 1b)

W

1.5
–55 to +175

°C

(Note 1)

2.7

°C/W

(Note 1a)

45

(Note 1b)

96

Operating and Storage Junction Temperature Range

Thermal Characteristics
RθJC

Thermal Resistance, Junction-to-Case

RθJA

Thermal Resistance, Junction-to-Ambient

RθJA

Package Marking and Ordering Information
Device Marking

Device

Package

Reel Size

Tape width

Quantity

FDD6690A

FDD6690A

D-PAK (TO-252)

13’’

12mm

2500 units

2003 Fairchild Semiconductor Corp.

FDD6690A Rev EW)

FDD6690A

July 2003

Symbol

TA = 25°C unless otherwise noted

Parameter

Test Conditions

Min

Typ

Max Units

Drain-Source Avalanche Ratings (Note 2)
EAS

Drain-Source Avalanche Energy

IAS

Drain-Source Avalanche Current

Single Pulse, VDD = 15 V, ID= 12A

180

mJ

12

A

Off Characteristics
ID = 250 µA

BVDSS
∆BVDSS
∆TJ
IDSS

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current

VGS = 0 V,

VDS = 24 V,

VGS = 0 V

1

µA

IGSS

Gate–Body Leakage

VGS = ±20 V,

VDS = 0 V

±100

nA

1.9
–5

3

V
mV/°C

7.7
9.9
11.4

12
14
19

mΩ

On Characteristics
VGS(th)
∆VGS(th)
∆TJ
RDS(on)

30

ID = 250 µA,Referenced to 25°C

V
24

mV/°C

(Note 2)

Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient

VDS = VGS,
ID = 250 µA
ID = 250 µA,Referenced to 25°C

Static Drain–Source
On–Resistance

ID(on)

On–State Drain Current

VGS = 10 V,
ID = 12 A
VGS = 4.5 V, ID = 10 A
VGS = 10 V, ID = 12 A,TJ=125°C
VGS = 10 V,
VDS = 5 V

gFS

Forward Transconductance

VDS = 10 V,

ID = 12 A

VDS = 15 V,
f = 1.0 MHz

V GS = 0 V,

1

50

A
47

S

1230

pF

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

RG

Gate Resistance

Switching Characteristics
td(on)

Turn–On Delay Time

tr

Turn–On Rise Time

td(off)

Turn–Off Delay Time

tf

Turn–Off Fall Time

Qg

Total Gate Charge

Qgs

Gate–Source Charge

Qgd

Gate–Drain Charge

VGS = 15 mV,

f = 1.0 MHz

VDD = 15 V,
VGS = 10 V,

ID = 1 A,
RGEN = 6 Ω

325

pF

150

pF

1.5

pF

(Note 2)

VDS = 15V,
VGS = 5 V

ID = 12 A,

10

19

ns

7

13

ns

29

46

ns

12

21

ns

13

18

nC

3.5

nC

5.1

nC

FDD6690A Rev. EW)

FDD6690A

Electrical Characteristics

Symbol

TA = 25°C unless otherwise noted

Parameter

Test Conditions

Min

Typ

Max Units

Drain–Source Diode Characteristics and Maximum Ratings
IS

Maximum Continuous Drain–Source Diode Forward Current

VSD

Drain–Source Diode Forward Voltage

trr

Diode Reverse Recovery Time

Qrr

Diode Reverse Recovery Charge

VGS = 0 V,
IF = 12 A,

IS = 2.3 A
(Note 2)
diF/dt = 100 A/µs

0.76

2.3

A

1.2

V

24

nS

13

nC

Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) RθJA = 45°C/W when mounted on a
1in2 pad of 2 oz copper

b) RθJA = 96°C/W when mounted
on a minimum pad.

Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. Maximum current is calculated as:

PD
R DS(ON)

where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A

FDD6690A Rev. EW)

FDD6690A

Electrical Characteristics

FDD6690A

Typical Characteristics

100

1.8
6.0V

ID, DRAIN CURRENT (A)

80

4.5V
5.0V

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

VGS = 10.0V

4.0V

60

3.5V
40

20

3.0V

VGS = 3.5V
1.6

4.0V

1.4

4.5V

5.0V

1.2

6.0V
10.0V

1

0.8
0

0
0

0.5

1
1.5
2
VDS, DRAIN-SOURCE VOLTAGE (V)

2.5

60

80

Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.03

1.6

ID = 12A
VGS = 10V

ID = 6A
RDS(ON) , ON-RESISTANCE (OHM)

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

40
ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics

1.4

1.2

1

0.8

0.6

0.025

0.02
o

TA = 125 C
0.015

TA = 25oC
0.01

0.005

-50

-25

0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)

125

150

2

Figure 3. On-Resistance Variation
withTemperature

4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)

10

Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
1000

90

VGS = 0V

75

IS, REVERSE DRAIN CURRENT (A)

TA =-55oC

VDS = 5V
ID, DRAIN CURRENT (A)

20

3

o

125 C
60
25oC

45
30
15

100
o

TA = 125 C

10

25oC
1

-55oC

0.1
0.01
0.001

0.0001

0
1.5

2

2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)

4

Figure 5. Transfer Characteristics

4.5

0

0.2

0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)

1.4

Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature

FDD6690A Rev. EW)

FDD6690A

Typical Characteristics

10

1800

VGS, GATE-SOURCE VOLTAGE (V)

ID = 12 A

VDS = 10V

20V

1500

8

Ciss

CAPACITANCE (pF)

15V

6

f = 1MHz
VGS = 0 V

4

1200

900

600

Coss

2

300

Crss
0

0
0

5

10
15
Qg, GATE CHARGE (nC)

20

0

25

Figure 7. Gate Charge Characteristics

10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)

30

Figure 8. Capacitance Characteristics

1000

P(pk), PEAK TRANSIENT POWER (W)

100

100µs

RDS(ON) LIMIT

100
ID, DRAIN CURRENT (A)

5

1ms
10ms
10

100ms
1s
10

1

DC

VGS = 4.5V
SINGLE PULSE
RθJA = 96oC/W

0.1

TA = 25oC
0.01
0.1

1

10

100

SINGLE PULSE
RθJA = 96°C/W
TA = 25°C

80

60

40

20

0
0.01

0.1

1
t1, TIME (sec)

VDS, DRAIN-SOURCE VOLTAGE (V)

r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE

Figure 9. Maximum Safe Operating Area

10

100

Figure 10. Single Pulse Maximum
Power Dissipation

1
D = 0.5

R θJA (t) = r(t) * R θJA
R θJA = 96 °C/W

0.2

0.1

0.1
0.05
0.02

0.01

P(pk)

0.01

t1
t2

0.001

0.0001
0.0001

T J - T A = P * R θJA (t)
Duty Cycle, D = t 1 / t2

SINGLE PULSE

0.001

0.01

0.1

1

10

100

1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDD6690A Rev. EW)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
FACT Quiet Series™
ActiveArray™
FAST
Bottomless™
FASTr™
CoolFET™
FRFET™
CROSSVOLT™ GlobalOptoisolator™
DOME™
GTO™
EcoSPARK™ HiSeC™
E2CMOSTM
I2C™
TM
EnSigna
ImpliedDisconnect™
FACT™
ISOPLANAR™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™

LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™

Power247™
PowerTrench
QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperSOT™-3

SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
UltraFET
VCX™

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I5



---

Source Exif Data:

File Type                       : PDF
File Type Extension             : pdf
MIME Type                       : application/pdf
PDF Version                     : 1.4
Linearized                      : Yes
Create Date                     : 2003:07:29 12:12:29Z
Modify Date                     : 2003:08:27 14:13:36-07:00
Page Count                      : 6
Creation Date                   : 2003:07:29 12:12:29Z
Author                          : 
Producer                        : Acrobat PDFWriter 4.05 for Windows NT
Mod Date                        : 2003:08:27 14:13:36-07:00
Metadata Date                   : 2003:08:27 14:13:36-07:00
Title                           : FDD6690A 30V N-Channel PowerTrench® MOSFET
Creator                         : 

EXIF Metadata provided by EXIF.tools