Fairchild Powertrench Fdd6690A Users Manual 30V N Channel PowerTrench® MOSFET

MOSFET to the manual 005eb275-5b17-48a8-8f21-850e9df126dc

2015-02-09

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July 2003
2003 Fairchild Semiconductor Corp. FDD6690A Rev EW)
FDD6690A
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
• DC/DC converter
• Motor Drives
Features
• 46 A, 30 V RDS(ON) = 12 mΩ @ VGS = 10 V
RDS(ON) = 14 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast Switching Speed
• High performance trench technology for extremely
low RDS(ON)
G
S
D
TO-252
D-PAK
(TO-252)
S
G
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
IDContinuous Drain Current @TC=25°C (Note 3) 46 A
@TA=25°C (Note 1a) 12
Pulsed (Note 1a) 100
Power Dissipation @TC=25°C (Note 3) 56
@TA=25°C (Note 1a) 3.3
PD
@TA=25°C (Note 1b) 1.5
W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.7 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 45
RθJA (Note 1b) 96
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD6690A FDD6690A D-PAK (TO-252) 13’’ 12mm 2500 units
FDD6690A
FDD6690A Rev. EW)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID= 12A 180 mJ
IAS Drain-Source Avalanche Current 12 A
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA30 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA,Referenced to 25°C24 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1µA
IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA
On Characteristics (Note 2)
VGS(th)Gate Threshold Voltage VDS = VGS, ID = 250 µA11.9 3V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient ID = 250 µA,Referenced to 25°C–5 mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 10 A
VGS = 10 V, ID = 12 A,TJ=125°C
7.7
9.9
11.4
12
14
19
mΩ
ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
gFS Forward Transconductance VDS = 10 V, ID = 12 A 47 S
Dynamic Characteristics
Ciss Input Capacitance 1230 pF
Coss Output Capacitance 325 pF
Crss Reverse Transfer Capacitance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz 150 pF
RGGate Resistance VGS = 15 mV, f = 1.0 MHz 1.5 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 10 19 ns
trTurn–On Rise Time 7 13 ns
td(off) Turn–Off Delay Time 29 46 ns
tfTurn–Off Fall Time
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
12 21 ns
QgTotal Gate Charge 13 18 nC
Qgs Gate–Source Charge 3.5 nC
Qgd Gate–Drain Charge
VDS = 15V, ID = 12 A,
VGS = 5 V 5.1 nC
FDD6690A
FDD6690A Rev. EW)
D
R
P
DS(ON)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain–Source Diode Forward Current 2.3 A
VSD Drain–Source Diode Forward Voltage V
GS
= 0 V, I
S
= 2.3 A (Note 2) 0.76 1.2 V
trr Diode Reverse Recovery Time 24 nS
Qrr Diode Reverse Recovery Charge
I
F
= 12 A, d
iF
/d
t
= 100 A/µs
13 nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 45°C/W when mounted on a
1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6690A
FDD6690A Rev. EW)
Typical Characteristics
0
20
40
60
80
100
00.5 11.5 22.5 3
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
3.0V
4.0V
VGS = 10.0V
3.5V
4.5V
6.0V 5.0V
0.8
1
1.2
1.4
1.6
1.8
0 20 40 60 80
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 3.5V
4.0V
5.0V
6.0V
4.5V
10.0V
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
RDS(ON), NORMALIZED
ID = 12A
VGS = 10V
0.005
0.01
0.015
0.02
0.025
0.03
246810
VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON), ON-RESISTANCE (OHM)
ID = 6A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation
withTemperature Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
0
15
30
45
60
75
90
1.5 22.5 33.5 44.5
VGS, GATE TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
TA =-55oC
25oC
125oC
VDS = 5V
0.0001
0.001
0.01
0.1
1
10
100
1000
00.2 0.4 0.6 0.8 11.2 1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
IS
TA = 125oC
25oC
-55oC
VGS = 0V
Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6690A
FDD6690A Rev. EW)
Typical Characteristics
0
2
4
6
8
10
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
VGS, GATE-SOURCE VOLTAGE (V)
ID = 12 A VDS = 10V
15V
20V
0
300
600
900
1200
1500
1800
0 5 10 15 20 25 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
Ciss
Crss
Coss
f = 1MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics
0.01
0.1
1
10
100
1000
0.1 110 100
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
DC
1s
100ms
RDS(ON) LIMIT
VGS = 4.5V
SINGLE PULSE
RθJA = 96oC/W
TA = 25oC
10ms
1ms
100µs
10
0
20
40
60
80
100
0.01 0.1 110 100
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum
Power Dissipation
0.0001
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 110 100 1000
t1, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
RθJA(t) = r(t) * RθJA
RθJA = 96 °C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1
t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6690A
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
First Production
Full Production
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