Fujitsu Stacked/Multi Devices (Stacked MCP) Stackedmcp

User Manual: Fujitsu Stacked/Multi-Devices (Stacked MCP) Packaging ation - Fujitsu United States

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Stacked MCP
Stacked Multi-Chip Package (Stacked MCP) is one of the most suitable chip scale packages for wireless
applications. Its advantage is the compact stacked chip configuration. In the Flash memory and SRAM
configuration, the pin layout can accomodate a 128 MB combination.Typical package construction
consists of two die back lapped down to 100µm and total package height is only 1.2 mm. Different
combinations of Flash and SRAM can be mounted in this package up to package size 10.4 x 10.8mm.
Stacked MCP supports packaging solutions up to 8 die stacked using flip-chip interconnection and
stacked wire bonded die. Additional logic-memory and logic-logic combinations are available.

• Saves board space
• Ideal for integrating technologies or functions in one
single package
• Ideal for combining logic and memory at low cost
• Low profile
25µm Thin Wafer

Advanced Packaging Services

10

Stacked MCP
5-chip stacked

The new module combines advances in wafer thinning technology, which reduces the thickness of existing chips
by about 16% , with chip stacking and re-distribution technologies. Compared to SiPs with similar
functionalities, the prototype chip boasts a 30% reduced board area and 65% thinner profile, making it the ideal
system LSI solution for miniaturized digital equipment.
8-chip stacked
Chip thickness:
50 µm (WB)

{

4 metal-layer interposer
2.0 mm max

{

100 µm (FC)

2 metal-layer interposer

3-chip stacked, wire bonding
Resin

Die

Au Wire

Adhesive
Substrate

Solder Ball

Flip-chip bonding and wire bonding
Resin

Flip-chip bonding

Die

Au Wire

Adhesive
Solder Ball
11

Fujitsu Microelectronics America, Inc.

Substrate

Stacked MCP
Standard Package Line-up
Package Type Package Code

Body Size
(mm)

Pitch
(mm)

Configuration

FBGA61

BGA-61P-M02

9 x 9 x 1.4

0.8

16M Flash + 2M SRAM

FBGA69
FBGA77

BGA-69P-M02

8 x 11 x 1.4

0.8

16M Flash + 4M SRAM

BGA-77P-M01

9 x 14 x 1.4

0.8

32M Flash + 4M SRAM

FBGA73

BGA-73P-M01

8 x 11.6 x 1.4

0.8

32M Flash + 2M SRAM
32M Flash + 4M SRAM

FBGA56

BGA-56P-M01

7 x 7.2 x 1.2

0.8

16M Flash + 2M SRAM
16M Flash + 4M SRAM

FBGA71

BGA-71P-M01

7 x 12 x 1.2

0.8

32M Flash + 8M SRAM

FBGA71

BGA-71P-M02

7 x 11 x 1.2

0.8

32M Flash + 16M SRAM
32M Flash + 4M SRAM

FBGA101

BGA-101P-M01

11 x 12 x 1.4

0.8

64M Flash + 8M SRAM
64M Flash + 16M FCRAM

FBGA123

BGA-123P-M01

11 x 12 x 1.4

0.8

64M Flash (NAND) + 16M FCRAM

FBGA81

BGA-81P-M03

10.4 x 10.8 x 1.2

0.8

64M Flash + 32M FCRAM

FBGA85

BGA-85P-M02

10.4 x 10.8 x 1.3

0.8

64M Flash + 16M FCRAM+ 4M SRAM
64M Flash (NAND) + 32M FCRAM+ 32 FCRAM

FBGA111

BGA-111P-M01

10.4 x 10.8 x 1.4

0.8

64M Flash (NAND) + 32M FCRAM

Custom configurations including non-memory applications are available.

Package Reliability (FBGA69)
Test Item

Condition

Criteria

Result

Temperature Cycle*

-65°C ~ 150°C

200 cycles

Pass

150°C

1008 hours

Pass

Thermal Shock

0°C ~ 100°C

200 cycles

Pass

PTHS*

121°C, 85%

504 hours

Pass

PTHB

121°C, 85%

96 hours

Pass

HTS

* Preconditioning: Baking 125°C, 24 hours, +85°C ~ 85%, 20 hours + IR 250°C max.

Moisture Sensitivity (FBGA69)
Condition

Result

85°C/85%RH, 24 hours + IR250°C

Pass

30°C/80%RH, 240 hours + IR250°C

Pass

Thermal Performance (FBGA69)

θ-ja (°C/W)
0m/sec
45

θ-jc (°C/W)

1m/sec

3m/sec

40

35

10

Advanced Packaging Services

12



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