HARRIS TR-307-X2 PRIVIATE RADIO BASESTATION User Manual LBI 38643C 25 KHZ RECEIVER IF MODULE 19D902783G1

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Date Submitted	1998-08-06 00:00:00
Date Available	1998-10-05 00:00:00
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Document Title	LBI-38643C - 25 KHZ RECEIVER IF MODULE 19D902783G1
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LBI-38643C
MAINTENANCE MANUAL FOR
25kHz RECEIVER IF MODULE
19D902783G1
TABLE OF CONTENTS
DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Page
Front Cover
GENERAL SPECIFICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CIRCUIT ANALYSIS . . . . . . . . . . . . .
INPUT MATCHING NETWORK . . .
CRYSTAL FILTERS, IF AMPLIFIERS
OSCILLATOR/MIXER/DETECTOR .
AUDIO AMPLIFIER . . . . . . . . . .
SQUELCH . . . . . . . . . . . . . . . .
Buffer Amplifier . . . . . . . . . .
High Pass Filter . . . . . . . . . . .
Noise Detector . . . . . . . . . . .
DC Amplifier . . . . . . . . . . . .
Schmitt Trigger . . . . . . . . . . .
FAULT DETECTOR . . . . . . . . . .
VOLTAGE REGULATOR . . . . . . .
MAINTENANCE . . . . . . . . . . . . . . .
BLOCK DIAGRAM . . . . . . . . . . . . . .
RECOMMENDED TEST EQUIPMENT .
ALIGNMENT PROCEDURE . . . . . .
TROUBLESHOOTING . . . . . . . . . .
ASSEMBLY DIAGRAM . . . . . . . . . . . .
OUTLINE DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SCHEMATIC DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PARTS LIST . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PRODUCTION CHANGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IC DATA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DESCRIPTION
• A chain of two crystal filters and two integrated
circuit IF amplifiers
The MASTR III Receiver IF Module provides amplification and demodulation of the 21.4 MHz Intermediate
Frequency signal. The IF Module also includes the receiver squelch circuitry. However, it does not include deemphasis or squelch audio gating circuits. Figure 1 is a
block diagram showing the functional operation of the
IF Module.
• An integrated circuit containing a crystal
oscillator, mixer, limiter, and quadrature detector
The IF Module circuitry contains the following:
• A variable gain AF amplifier
• A squelch circuit
• A fault detector circuit
• An integrated circuit voltage regulator
• A 50 ohm input impedance matching network and
IF Amplifier
ericssonz
Ericsson Inc.
Private Radio Systems
Mountain View Road
Lynchburg, Virginia 24502
1-800-528-7711 (Outside USA, 804-592-7711)
Printed in U.S.A.
LBI-38643C
CIRCUIT ANALYSIS
INPUT MATCHING NETWORK
The mixer is internally connected to the crystal oscillator.
Pins 16 and 3 of U3 are the mixer input and output respectively. Typical mixer conversion gain is about 20 dB. The output of the mixer drives the 4 pole ceramic bandpass filter FL1.
The input impedance matching network provides a 50 ohm
load for the receiver RF module. The network consists of C1
thru C3, L1 thru L3, and R1.
The limiter input is U3 pin 5, but the limiter output is internally connected to the detector and is not externally available.
Capacitor C1 provides AC coupling and a DC block on the
input line (J1). This DC block protects the module in the event
of a failure in a preceding module. L2 and L3 are series resonant at 21.4 MHz and provide a signal path to the FET amplifier Q6. Parallel resonant circuit, L1 and C2, provide a path to
the 50 ohm load, R1, for frequencies other than 21.4 MHz.
A received signal strength indicator (RSSI) is provided at
U3 Pin 13. This indicator signal is generated within the limiter
circuitry and provides an output current proportional to the
logarithm of the input signal strength. This current develops a
voltage across R18. The voltage varies from about 0.7 Vdc for
noise input, to about 1 Vdc for a 12 dB SINAD signal, to a
maximum of about 2.7 Vdc for a high signal level (50 dB
stronger than that required for 12 dB SINAD).
CRYSTAL FILTERS, IF AMPLIFIERS
Y1, Y2, U1, U2, and associated circuitry provide IF filtering and amplification at 21.4 MHz. Filters Y1 and Y2 are both
4 pole bandpass filters with a center frequency of 21.4 MHz
and a bandwidth of ±6.5 kHz. Amplifiers U1 and U2 are integrated circuit amplifiers. U1 provides 30 dB of gain, U2 provides 18 dB of gain. The amplifiers and filters have terminal
impedances of 50 ohms. In circuit gain measurements can be
made using a high impedance probe.
Inductors L3, L4 and associated resistors and capacitors
provide power supply decoupling. R3 and R7 provide paths to
the input of the Fault Detector circuit. These inputs enable the
Fault Detector circuit to monitor the DC voltages of U1 and
U2.
The RF level detectors consist of transistors Q1 and Q2
along with associated resistors and capacitors. These detectors
play no role in the normal operation of the IF Module, but they
aid in unit testing and module troubleshooting.
OSCILLATOR/MIXER/DETECTOR
Integrated circuit U3 provides several functions including
2nd mixer, if amplifier and limiter, and quadrature detector.
The 20.945 MHz crystal oscillator provides local oscillator
injection to the mixer in U3. This mixer converts the 21.4 MHz
IF signal to 455 kHz. C20 and C21 are oscillator feedback capacitors and have been chosen to provide the proper capacitance for crystal Y3. The proper oscillator output level is
difficult to measure directly without affecting the oscillation.
A preferable measurement is at TP3 which should read
about 50 mV pk. (Measured using a 10 megohm, 11 pF oscilloscope probe.)
The quadrature detector provides a demodulated audio frequency output. The input to the detector is internally connected
to the limiter and is not externally available. The output of the
detector is U3 pin 9. R19 and C28 provide low-pass filtering to
remove 455 kHz feedthrough. Ceramic resonator Y4 provides
the frequency selective component needed for FM demodulation. Y4 replaces the typical LC resonant circuit found in most
quadrature detectors. In contrast to the typical LC network, Y4
requires no adjustment.
TABLE 1 - GENERAL SPECIFICATIONS
ITEM
SPECIFICATION
I.F. frequency
21.4 MHz
Input Impedance
50 ohm
12 dB SINAD
-120.0 dBm
Adj. CH SEL (25 kHz)
-103 dB
Image (20.49 MHz)
-100 dB
3rd order Intercept Pt
23 dBm
Variation of Sensitivity with Signal Frequency
2 kHz
2nd I.F. frequency
455 kHz
2nd L.O. frequency
20.945 MHz
AF output (J2 pin 31C)
1 Vrms adjustable (with standard input signal)
AF output impedance
1k ohm
AF distortion
5%
AF response
The DC supply to U3 is provided through voltage dropping
resistor R11 to U3 pin 4. R12 provides a path to the input of
the Fault Detection circuit. This enables the Fault Detector to
monitor the DC voltage on U3.
10 Hz
-3 dB
300 Hz
±1 dB
1000 Hz
0 dB reference
AUDIO AMPLIFIER
3 kHz
±1 dB
Operational amplifier U6.3 provides audio frequency amplification. Its gain is set by its associated resistors, including
variable resistor VR1. VR1 allows for adjusting the AF output
level to 1 Vrms with a standard input signal to the module (1
kHz AF, 3 kHz peak deviation). U6.2 is used as a voltage regulator to provide 4 Vdc for biasing the Operational amplifier.
Hum & Noise
-55 dB
RSSI output (J2 pin 20C)
0.7 to 2.7 Vdc prop to log (sig level)
RSSI time constant
5 ms
SQ Threshold Sensitivity
-119 dBm
SQ Maximum Sensitivity
-102 dBm
SQUELCH
SQ Clipping
3 kHz
Buffer Amplifier
SQ Attack
150 ms
Integrated circuit U6.4 is configured as a unity gain buffer
amplifier. It provides a high input impedance to minimize loading of the previous circuits.
SQ Close
250 ms
SQ output (J2 pin 26C)
5V logic (low = squelched)
Fault output (J2 pin 11C)
5V logic (low = fault)
DC Supply
1 Vrms (adjustable)
Copyright© February 1992, Ericsson Inc.
LBI-38643C
Highpass Filter
The audio frequency highpass filter consists of U7.1 and its
associated circuitry. The purpose of this filter is to reject all
voice frequencies and allow only demodulated noise to pass.
The functioning of the squelch circuit depends upon the presence or absence of this noise. (When a signal is being received,
i.e. the receiver is quiet, the squelch circuit senses the absence
of noise and unsquelches the radio.)
Noise Detector
U7.2 along with associated components act as a noise detector. The rectified output of U7.2 charges C44 to a nearly
constant DC voltage.
DC Amplifier
U7.3 is configured as a basic amplifier with a gain of 11.
Schmitt Trigger
U7.4 is configured as an amplifier with positive feedback.
This arrangement provides hysteresis in the output verses input
characteristic. This eliminates the possibility of the squelch circuit repeatedly cutting in and out when the input signal is near
a threshold. R56 and R57 act as a voltage divider to provide a 5
volt logic level output. (Logic High = unsqelched)
FAULT DETECTOR
U4 and U5 are voltage comparators. These are configured
into four "window detectors" which sense the presence of voltages within specified ranges (windows).
VOLTAGE REGULATOR
U8 is a monolithic integrated circuit voltage regulator providing 8 Vdc. This powers all circuitry in the module with exception of the front panel LED and its drivers.
MAINTENANCE
RECOMMENDED TEST EQUIPMENT
The following test equipment is required to test the IF
Module.
1. FM Signal Generator; HP 8640B, HP 8657A, or
equivalent
2. AF Generator or Function Generator
3. Audio Analyzer; HP 8903B, HP 339A, or equivalent
4. Oscilloscope
5. DC Meter for troubleshooting
6. Power Supply; 13.8 Vdc @ 150 mA
ALIGNMENT PROCEDURE
1. Apply 13.8 Vdc supply to module.
The four window detector circuits are U4.1 & U4.2, U4.4
& U4.3, U5.1 & U5.2, and U5.4 & U5.3. These monitor DC
operating voltages on U6.2, U1, U2, and U3 respectively. R29
and R30 comprise a voltage divider to provide a 5 volt logic
level output. A fault is indicated when the output drops to zero.
2. Verify DC current consumption is between 90 and 150
mA.
Diode D1 and transistor Q3 monitor the output of the 8V
regulator. D1 is a 8.2 volt breakdown diode. If the regulator
output voltage should rise above 8.9 V (8.2 + 0.7 base-emitter
drop) Q1 will turn on and a fault will be indicated.
4. Apply a standard input signal to the module input. (-60
dBm, 21.4 MHz signal modulated with 1kHz AF, 3 kHz
peak deviation)
Transistors Q4 and Q5 are drivers for the front panel LED
CR1. These are powered from the +13.8 Vdc line before the
Figure 1 - 25 kHz Receiver IF Module
8V regulator. Therefore, if the regulator opens, a fault will still
be indicated.
3. Verify fault output is 0 to 0.5 Vdc and front panel LED
is off.
5. Set VR1 for 1 Vrms ±3% at module output (pin 31C on
96 pin connector J2).
ASSEMBLY DIAGRAM
TROUBLESHOOTING
Each IF amplifier has a nominal 18 dB gain. U2 has a
nominal gain of 30 dB. The mixer has about 20 dB gain with
proper LO injection. The proper crystal oscillator level is 50
mV pk measured at TP3.
TP2:
100 mV PK @ 21.4 MHz with -50 dBm input
signal
TP3:
50 mV pk @ 20.945 MHz independent of input
signal
TP4:
100 mV pk @ 455 kHz with -60 dBm input signal
The following four test points are provided on the PWB for
additional test capability:
LBI-38643C
All RF voltages measured with 10 Megohm, 11 pF probe.
TP1:
100 mV pk @ 21.4 MHz with -30 dBm input signal
TROUBLE SHOOTING GUIDE
SYMPTOM
CHECK
(CORRECT READING SHOWN)
INCORRECT READING
INDICATES DEFECTIVE
COMPONENT
If DC voltages not correct
U8 or associated components
U6 or associated components
U1 or associated components
U2 or associated components
U3 or associated components
If DC voltages correct
U4, U5, U6, D1, Q3, Q4, Q5
Fault indicator on
Check DC voltages
+8V at U8 Pin 1
+4v at U Pin 7
5.5V at U1 output pin
3.3V at 2 output pin
4.4V at U3 Pin 4
No audio - no
noise
With no signal applied to module IF input
Check for AF noise @ C29 ; 200mV
Check for AF noise @ U6 Pin 8: 1 V
U3 or associated components
U6 or associated components
Noise only - no
demodulated audio
Check crystal oscillator: TP3 50 mVpk 20.945 MHz
U3, Y3 or associated components
Apply -30 dBm 21.4 MHz input, check TP1 100 mVpk
Apply -50 dBm 21.4 MHz input, check TP2 100 mVpk
Apply -60 dBm 21.4 MHz input, check TP4 100 mVpk
Q6, Y1, U1 or associated components
U2, Y2 or associated components
U3, FL1 or associated components
Poor 12 dB SINAD
No squelch
function
Check crystal oscillator: TP3 50 mVpk 20.945 MHz
U3, Y3 or associated components
Apply -30 dBm 21.4 MHz input, check TP1 100 mVpk
Apply -50 dBm 21.4 MHz input, check TP2 100 mVpk
Apply -60 dBm 21.4 MHz input, check TP4 100 mVpk
Q6, Y1, U1 or associated components
U2, Y2 or associated components
U3, FL1 or associated components
With squelch pot maximum, or with module AUDIO/
SQUELCH/HI connected to SQUELCH/ARM input
and with no signal to module IF input:
Check Presence of 1 Vpk noise at U6 Pin 14
U6 or associated components
Check presence of 1 Vpk noise U7 at Pin 1
Check presence of 1 Vpk noise U7 Pin 1
Check DC voltage U7 at Pin 8: 7 V
Check DC voltage U7 Pin 14: 0.5 V
U7 or associated components
RECEIVER IF MODULE
19D902783G1
(19D902783, Sh. 1, Rev. 3)
LBI-38643C
OUTLINE DIAGRAM
(19D902494, Sh. 1, Rev. 5B)
(19D902493, Comp. Side, Rev. 5)
RECEIVER IF MODULE
19D902494G1
SCHEMATIC DIAGRAM
LBI-38643C
RECEIVER IF MODULE
19D902494G1
(19D902504, Sh. 1, Rev. 6)
LBI-38643C
RECEIVER IF MODULE
19D902494G1
(19D902504, Sh. 2, Rev. 6)
SCHEMATIC DIAGRAM
LBI-38643C
PARTS LIST
VHF RECEIVER RF MODULE
19D902783G1
ISSUE 2
SYMBOL
PART NO.
19D902508P1
PART NO.
19A705205P2
Tantalum: 1 µF, 16 VDCW; sim to Sprague 293D.
C36
19A705205P5
Tantalum: 6.8 µF, 10 VDCW; sim to Sprague
293D.
C37
19A705205P2
Tantalum: 1 µF, 16 VDCW; sim to Sprague 293D.
C38
thru
C40
Chassis.
DESCRIPTION
C35
DESCRIPTION
- - - - - MISCELLANEOUS - - - -
SYMBOL
19A702061P89
Ceramic: 1500 pF ±5%, 50 VDCW, temp coef 0
±30 PPM.
SYMBOL
PART NO.
DESCRIPTION
- - - - - - - - TRANSISTORS - - - - - - - - -
Q1
and
Q2
19A704708P2
Silicon, NPN: sim to NEC 2SC3356.
Q3
19A700076P2
thru Q5
Silicon, NPN: sim to MMBT3904, low profile.
Q6
19A702524P2
N-Type, field effect.
19D902509P1
Cover.
19D902555P1
Handle.
C41
19A702052P22
Ceramic: 0.047 µF ±10%, 50 VDCW.
19A702061P77
Ceramic: 470 pF ±5%, 50 VDCW, temp coef 0
±30 PPM.
R1
19B800607P510 Metal film: 51 ohms ±5%, 1/8 w.
R2
19B800607P820 Metal film: 82 ohms ±5%, 1/8 w.
R3
19B800607P103 Metal film: 10K ohms ±5%, 1/8 w.
19A702381P506
Screw, thread forming: TORX, No. M3.5 - 0.6
X 6.
C42
and
C43
19A702381P513
Screw, thread forming: TORX, No. M3.5 - 0.6
X 13.
C44
19A702052P26
Ceramic: 0.1 µF ±10%, 50 VDCW.
C45
thru
C52
19A702052P14
Ceramic: 0.01 µF ±10%, 50 VDCW.
C53
19A705205P12
Tantalum: .33 µF, 16 VDCW; sim to Sprague
293D.
19A702052P14
Ceramic: 0.01 µF ±10%, 50 VDCW.
11
19A702381P508
Screw, thread forming: No. 3.5-0.6 x 8.
Receiver IF Board
19D902494G1
C1
19A702052P14
Ceramic: 0.01 µF ±10%, 50 VDCW.
C54
thru
C58
C2
19A702236P52
Ceramic: 120 pF, ±5%, 50 VDCW.
C59
19A702052P5
C3
19A702236P49
Ceramic: 91 pF, ±5%, 50 VDCW.
C60
19A702052P14
Ceramic: 0.01 µF ±10%, 50 VDCW.
C4
19A702052P14
Ceramic: 0.01 µF ±10%, 50 VDCW.
C61
19A702052P5
Ceramic: 1000 pF ±10%, 50 VDCW.
C5
thru
C7
19A702052P26
Ceramic: 0.1 µF ±10%, 50 VDCW.
C62
thru
C67
19A702052P14
Ceramic: 0.01 µF ±10%, 50 VDCW.
Ceramic: 0.01 µF ±10%, 50 VDCW.
C68
19A702052P5
Ceramic: 1000 pF ±10%, 50 VDCW.
19A702052P14
Ceramic: 0.01 µF ±10%, 50 VDCW.
Ceramic: 0.1 µF ±10%, 50 VDCW.
C69
and
C70
19A702052P26
Ceramic: 0.1 µF ±10%, 50 VDCW.
Ceramic: 0.01 µF ±10%, 50 VDCW.
C71
and
C72
C74
19A702061P49
Ceramic: 56 pF ±5%, 50 VDCW, temp coef 0
±30 PPM.
- - - - - - - - - CAPACITORS - - - - - - - - - - -
C8
thru
C10
19A702052P14
C11
thru
C13
19A702052P26
C14
and
C15
19A702052P14
C16
thru
C18
19A702052P26
C19
19A702052P14
Ceramic: 0.1 µF ±10%, 50 VDCW.
Ceramic: 51 pF ±5%, 50 VDCW, temp coef 0
±30 PPM.
19A702061P47
C22
19A702061P1
Ceramic: 1 pF ±0.5 pF, 50 VDCW.
C23
thru
C25
19A702052P26
Ceramic: 0.1 µF ±10%, 50 VDCW.
C26
19A702061P33
Ceramic: 27 pF ±5%, 50 VDCW, temp coef 0
±30 PPM/°C.
19A702052P26
Ceramic: 0.1 µF ±10%, 50 VDCW.
C28
19A702052P5
Ceramic: 1000 pF ±10%, 50 VDCW.
C29
19A705205P5
Tantalum: 6.8 µF, 10 VDCW; sim to Sprague
293D.
C30
19A705205P2
C32
thru
C34
CR1
19A703595P10
Optoelectronic: Red LED in right angle housing;
sim to HP HLMP-1301-010.
D1
19A700083P105 Zener: 8.2V; sim to BZX84-C8V2.
- - - - - - - - - - - FILTERS - - - - - - - - - - - -
FL1
J1
19A702171P3
19A115938P24
Bandpass Filter: Fc = 455 kHz, 6dB BW = ±7.5
kHz; sim to Murata CFU455E2.
Connector, receptacle.
- - - - - - - - - - - JACKS - - - - - - - - - - - - -
C27
C31
- - - - - - - - - - - - DIODES - - - - - - - - - - - -
Ceramic: 0.01 µF ±10%, 50 VDCW.
C20
and
C21
Ceramic: 1000 pF ±10%, 50 VDCW.
19A705205P12
19A702052P26
J2
19B801587P7
Connector, DIN: 96 male contacts, right angle
mounting; sim to AMP 650887-1.
- - - - - - - - - - -INDUCTORS - - - - - - - - - - -
L1
and
L2
19A700021P13
Tantalum: 1 µF, 16 VDCW; sim to Sprague
293D.
L3
thru
L7
19A705470P35
Tantalum: .33 µF, 16 VDCW; sim to
Sprague 293D.
L8
19A705470P24
Coil, fixed: 820 nH.
L9
19A700021P17
Coil, fixed: 1 µH.
Ceramic: 0.1 µF ±10%, 50 VDCW
Coil, fixed: 470 nH.
Coil, fixed: 6.8 µH.
- - - - - - - - - RESISTORS - - - - - - - - - - -
R4
19B800607P102 Metal film: 1K ohms ±5%, 1/8 w.
R5
19B800607P103 Metal film: 10K ohms ±5%, 1/8 w.
R6
19A702931P141 Metal film: 261 ohms ±1%, 200 VDCW,
1/8 w.
SYMBOL
PART NO.
DESCRIPTION
R39
19B800607P104 Metal film: 100K ohms ±5%, 1/8 w.
R40
19B800607P332 Metal film: 3.3K ohms ±5%, 1/8 w.
R41
19A702931P285 Metal film: 7500 ohms ±1%, 200 VDCW, 1/8
w.
R42
19B800607P104 Metal film: 100K ohms ±5%, 1/8 w.
R43
19B800607P102 Metal film: 1K ohms ±5%, 1/8 w.
R44
19B800607P153 Metal film: 15K ohms ±5%, 1/8 w.
R45
19A702931P273 Metal film: 5620 ohms ±1%, 200 VDCW, 1/8
w.
R46
19B800607P104 Metal film: 100K ohms ±5%, 1/8 w.
R47
19B800607P563 Metal film: 68K ohms ±5%, 1/8 w.
R48
19B800607P822 Metal film: 8.2K ohms ±5%, 1/8 w.
R49
19B800607P103 Metal film: 10K ohms ±5%, 1/8 w.
R50
19B800607P104 Metal film: 100K ohms ±5%, 1/8 w.
R7
19B800607P103 Metal film: 10K ohms ±5%, 1/8 w.
R51
19B800607P334 Metal film: 330K ohms ±5%, 1/8 w.
R8
19B800607P102 Metal film: 1K ohms ±5%, 1/8 w.
R52
19B800607P103 Metal film: 10K ohms ±5%, 1/8 w.
R9
19B800607P103 Metal film: 10K ohms ±5%, 1/8 w.
R53
19B800607P104 Metal film: 100K ohms ±5%, 1/8 w.
R10
19B800607P330 Metal film: 33 ohms ±5%, 1/8 w.
R54
19B800607P223 Metal film: 22K ohms ±5%, 1/8 w.
R11
19B800607P102 Metal film: 1K ohms ±5%, 1/8 w.
R55
19B800607P104 Metal film: 100K ohms ±5%, 1/8 w.
19B800607P181 Metal film: 180 ohms ±5%, 1/8 w.
R12
19B800607P103 Metal film: 10K ohms ±5%, 1/8 w.
R56
R13
19B800607P104 Metal film: 100K ohms ±5%, 1/8 w.
R57
19B800607P821 Metal film: 820 ohms ±5%, 1/8 w.
R14
19B800607P103 Metal film: 10K ohms ±5%, 1/8 w.
19B800607P102 Metal film: 1K ohms ±5%, 1/8 w.
R15
19B800607P182 Metal film: 1.8K ohms ±5%, 1/8 w.
R58
thru
R66
R16
19A702931P369 Metal film: 51.1K ohms ±1%, 200 VDCW, 1/8
w.
R17
19A702931P261 Metal film: 4220 ohms ±1%, 200 VDCW, 1/8
w.
R18
19A702931P369 Metal film: 51.1K ohms ±1%, 200 VDCW, 1/8
w.
R19
19B800607P822 Metal film: 8.2K ohms ±5%, 1/8 w.
R20
19B800607P392 Metal film: 3.9K ohms ±5%, 1/8 w.
R21
and
R22
19B800607P272 Metal film: 2.7K ohms ±5%, 1/8 w.
R23
R24
R67
19B800607P104 Metal film: 100K ohms ±5%, 1/8 w
R68
19B800607P102 Metal film: 1K ohms ±5%, 1/8 w.
R69
19B800607P101 Metal film: 100 ohms ±5%, 1/8 w.
R70
thru
R74
19B800607P102 Metal film: 1K ohms ±5%, 1/8 w.
R75
19B800607P391 Metal film: 390 ohms ±5%, 1/8 w.
R76
19B800607P100 Metal film: 10 ohms ±5%, 1/8 w.
R77
19B800607P102 Metal film: 1K ohms ±5%, 1/8 w.
R78
19B800607P392 Metal film: 3.9K ohms ±5%, 1/8 w.
19B800607P332 Metal film: 3.3K ohms ±5%, 1/8 w.
R79
19B800607P272 Metal film: 2.7K ohms ±5%, 1/8 w.
19B800607P182 Metal film: 1.8K ohms ±5%, 1/8 w.
R80
19B800607P750 Metal film: 75 ohms ±5%, 1/8 w.
R25
19B800607P392 Metal film: 3.9K ohms ±5%, 1/8 w.
R81
19B800607P121 Metal film: 120 ohms ±5%, 1/8 w.
R26
19B800607P272 Metal film: 2.7K ohms ±5%, 1/8 w.
R27
19B800607P102 Metal film: 1K ohms ±5%, 1/8 w.
U1
344A3740P1
Silicon, bipolar.
- - - - - -INTEGRATED CIRCUITS - - - - - -
R28
19B800607P272 Metal film: 2.7K ohms ±5%, 1/8 w.
U2
19A705927P1
Silicon, bipolar.
R29
19B800607P822 Metal film: 8.2K ohms ±5%, 1/8 w.
U3
19A149980P2
R30
19B800607P153 Metal film: 15K ohms ±5%, 1/8 w.
Linear: Osc./Mixer/IF/Det./Amp.; sim to
MC3372D.
R31
19B800607P103 Metal film: 10K ohms ±5%, 1/8 w.
Linear: Quad Comparator; sim to LM339D.
19B800607P104 Metal film: 100K ohms ±5%, 1/8 w.
U4
and
U5
19A704125P1
R32
and
R33
Linear:Quad Op Amp; sim to LM224D.
19B800607P153 Metal film: 15K ohms ±5%, 1/8 w.
U6
and
U7
19A701789P5
R34
R35
19B800607P331 Metal film: 330 ohms ±5%, 1/8 w.
U8
19A704971P10
R36
and
R37
19B800607P104 Metal film: 100K ohms ±5%, 1/8 w.
Voltage regulator: 8 Vdc; sim to
MC78M08CDT.
19B800779P12
R38
19B800607P102 Metal film: 1K ohms ±5%, 1/8 w.
VR1
Variable resistor: 22k ohms, 0.1 w; sim to
Murata RGV4E223.
- - - - - - - - VARIABLE RESISTOR - - - - - -
*COMPONENTS, ADDED, DELETED OR CHANGED BY PRODUCTION CHANGES
LBI-38643C
SYMBOL
PART NO.
PARTS LIST & PRODUCTION CHANGES
DESCRIPTION
- - - - - - - - - - -CRYSTALS - - - - - - - - -
Y1
19A149974G7
Filter, crystal: Fc = 21.4 MHz, 3 dB BW =
15.0 kHz. Insertion loss = 2.0 dB max.
Y2
19A149974G8
Filter, crystal: Fc = 21.4 MHz, 3 dB BW =
15.0 kHz. Insertion loss = 3.0 dB max.
Y3
19A702284G5
Quartz crystal unit: 20.945000 MHz ±10 ppm
@ 25°C.
Y4
19A149976P1
Fixed: 455 kHz.
PRODUCTION CHANGES
Changes in the equipment to improve performance or to simplify circuits are
identified by a "Revision Letter" which is stamped after the model number of the
unit. The revision stamped on the unit includes all previous revisions. Refer to
the Parts List for the descriptions of parts affected by these revisions.
Rev. A - 19D902494G1, 25 kHz IF Module Board
To improve performance in high temperature environments and to
eliminate Audio Level drifting, changed voltage regulator U8 and variable resistor VR1.
U8 was: 19A704971P11, 8 Vdc; sim to MC78L08ACD.
VR1 was: 19A705496P5 20K ohms 0.1w; sim to Murata RGV4E203.
Rev. B - 19D902494G1, 25 kHz IF Module Board
To change Squelch Driver operation to allow compatibility with GETC,
changed resistors R56, R57, and R69.
R56 was: 19B800607P182 Metal film: 1.8K ohms ±5%, 1/8 w.
R57 was: 19B800607P822 Metal film: 8.2K ohms ±5%, 1/8 w.
R69 was: 19B800607P102 Metal film: 1K ohms ±5%, 1/8 w.
LBI-38643C
IC DATA
U1
344A3740P1
Silicon Bipolar IC
U2
19A705927P1
Silicon Bipolar IC
U4 & U5
19A704125P1
Quad Comparator
U6 & U7
19A701789P4
Quad Op-Amp
U8
19A704971P10
Voltage Regulator
U3
19A149980P2
FM Receiver
LBI-38671H
ASSEMBLY DIAGRAM
MAINTENANCE MANUAL
FOR
UHF TRANSMITTER SYNTHESIZER MODULE
19D902780G3, G6 - G10
TABLE OF CONTENTS
Page
DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GENERAL SPECIFICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CIRCUIT ANALYSIS . . . . . . . . . . . . . . .
VOLTAGE CONTROLLED OSCILLATOR
FREQUENCY DOUBLER . . . . . . . . . .
RF AMPLIFIERS . . . . . . . . . . . . . . .
REFERENCE BUFFER AMPLIFIER . . . .
PRESCALER AND SYNTHESIZER . . . .
LOOP BUFFER AMPLIFIERS . . . . . . .
AUDIO FREQUENCY AMPLIFIER . . . .
VOLTAGE REGULATORS . . . . . . . . .
LOGIC CIRCUITS . . . . . . . . . . . . . .
BLOCK DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MAINTENANCE . . . . . . . . .
TEST PROCEDURE . . . . .
ALIGNMENT PROCEDURE
TROUBLESHOOTING . . .
PARTS LIST . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PRODUCTION CHANGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IC DATA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
OUTLINE DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SCHEMATIC DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UHF TRANSMITTER
SYNTHESIZER MODULE
19D902780G3, G6 - G10
ASSEMBLY DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Back Cover
(19D902780, Sh. 1, Rev. 5)
Ericsson Inc.
Private Radio Systems
Mountain View Road
Lynchburg, Virginia 24502
1-800-528-7711 (Outside USA, 804-592-7711)
Printed in U.S.A.
LBI-38671H
TABLE 1 - GENERAL SPECIFICATIONS
ITEM
SPECIFICATION
FREQUENCY RANGE
450-470 MHz (G3)
425-450 MHz (G7)
403-430 MHz (G6)
380-400 MHz (G8)
470-494 MHz (G9)
490-512 MHz (G10)
CHANNEL SPACING
6.25 kHz
RF POWER OUT (50 Ohm load)
10 to 13 dBm
(10 to 20 mW)
RF HARMONICS
< -30 dBc
NON-HARMONIC SPURS
1 to 200 MHz
200 MHz to 1 GHz
< - 90 dBc
< - 60 dBc
CARRIER ATTACK TIME
<25 mSec
REFERENCE INPUT
input level
input impedance
frequency
0 dBm ±1.5dB
50 Ohm
5 to 17.925 MHz (must be integer divisible by
channel spacing)
MODULATION SENSITIVITY
5 kHz peak dev/1 Vrms, Adjustable
AF INPUT IMPEDANCE
600 Ohm
AF RESPONSE
10 Hz
1000 Hz0 dB reference
3 kHz
±1.5 dB
<10%
HUM & NOISE
-55 dB
POWER REQUIREMENTS
13.8 Vdc @ 275 mA
-12.0 Vdc @ 10 mA
The principle function of the Transmitter Synthesizer Module
is to provide the RF excitation for input to the MASTR III
station power amplifier. The output of the synthesizer is a
frequency modulated signal at the desired frequency. The module contains the following functional blocks:
•
•
±1.5 dB
10 Hz SQUARE WAVE MODULATION
Sq wave droop
DESCRIPTION
A voltage controlled oscillator.
•
•
•
•
•
•
•
IC voltage regulators for +5 and -5 Vdc. A discrete
component regulator for +8 Vdc, and an Operational Amplifier regulator for +4 Vdc.
Logic circuitry: address decoder, input signal gates,
and a lock indicator circuit.
CIRCUIT ANALYSIS
VOLTAGE CONTROLLED OSCILLATOR
Transistor Q1 and associated circuitry comprise a low noise
Voltage Controlled Oscillator (VCO). Inductor L1 and associated capacitors form the oscillator resonant circuit (tank).
The noise characteristic of this oscillator is dependent on the
Q of this resonant circuit. The components used in the tank
are specified to have especially high Q. Diode D1 aids in
setting the bias point for low noise operation. (Any field
replacement of oscillator parts should use identical parts).
Variable Capacitor C10 sets the fixed capacitance in the tank,
and therefore sets the frequency range over which the oscillator can be voltage tuned.
The oscillator frequency is voltage tuned by the signal applied through R5 and L5 to the two varicap diodes D2 and
D3. Additionally, audio modulation is applied as an AF
voltage to the two varicap diodes. This RF voltage varies the
oscillator frequency at an audio rate (i.e., it frequency modulates the oscillator). Low frequency audio is applied along
with the varicap control voltage through R5 and L5 while
high frequency audio (MOD) is applied via C16.
Resistors R6 through R9 provide a two volt negative bias on
the varicap diodes.
Transistors Q101 and Q102 and associated circuitry form the
oscillator enable switch. This switch allows the station control circuitry to turn the VCO ON or OFF via the ANT_REL
line. Setting the ANT_REL line to a logic low causes Q102
to conduct. The five (5) volt output at Q102 collector
(OSCON) enables the fault indicator gates, U705-3 and
U705-4, and turns on Q101. Q101 starts to conduct, providing a ground path for Q1. This turns ON the VCO.
FREQUENCY DOUBLER
Transistors Q801 and Q802 form a buffer stage to drive
transistor multiplier Q803. The buffer isolates VCO Q1 from
loading effects which could degrade oscillator loaded Q and
hence noise performance. Transistor multiplier Q803 is
tuned to pass the second harmonic of the VCO output and
serves as a frequency doubler. Tank elements L802, C812C814 and L803 form a resonant circuit and matching network to drive resistive splitter R201-R204.
RF AMPLIFIERS
The RF chain begins with resistive splitter R201-R204 and
R216-R218. The output of the splitter at R203 is attenuated
by 10 dB and provides impedance matching helical filter
FL201, which is tuned to pass the fundamental while rejecting harmonics by approximately 40 dB. The output of FL201
is fed thru resistive pad R205-R207 to MMIC Amplifier
U201 which operates in compression. U201 drives output
amplifier U202 into compression. The output amplifier is
followed by a bandpass filter (C208-C210, L203-L205) and
resistive attenuators (R210-R215). The final output at the
front panel BNC Connector (J2) is nominally 11.5 dBm, and
drives the station Power Amp.
The other output of the resistive splitter at R218 is attenuated
by 20 dB and drives buffer amp U203 into compression.
U203 drives the synthesizer prescaler providing a feedback
signal for the synthesizer phase locked loop.
REFERENCE BUFFER AMPLIFIER
Transistor Q401 and associated components comprise a buffer amplifier for the reference oscillator signal. (The reference
oscillator signal is produced by the receiver synthesizer
module of a MASTR III station.) The 0 dBm reference
oscillator signal is fed through the front panel BNC connector J1. Resistor R405 provides a 50 ohm load to the reference
oscillator. The output of the Reference Buffer Amplifier is
fed directly to the synthesizer integrated circuit. The output
level at TP9 is approximately 3 volts peak to peak.
A chain of integrated circuit RF Amplifiers.
A reference buffer amplifier.
Dual modulus prescaler and synthesizer integrated
circuits.
Loop amplifiers and passive loop filter.
An audio amplifier and a pre-modulation integrator.
Frequency Doubler (Multiplier).
This manual is published by Ericsson Inc., without any warranty. Improvements and changes to this manual necessitated by typographical errors, inaccuracies of current information, or improvements to programs
and/or equipment, may be made by Ericsson Inc., at any time and without notice. Such changes will be incorporated into new editions of this manual. No part of this manual may be reproduced or transmitted in any
form or by any means, electronic or mechanical, including photocopying and recording, for any purpose, without the express written permission of Ericsson Inc.
Copyright © June 1992, Ericsson GE Mobile Communications, Inc.
LBI-38671H
PRESCALER AND SYNTHESIZER
Integrated circuit U402 is the heart of the synthesizer. It
contains the necessary frequency dividers and control circuitry to synthesize output frequencies by the technique of
dual modulus prescaling. U402 also contains an analog
sample and hold phase detector and a lock detector circuit.
Within the synthesizer (U402) are three programmable dividers which are loaded serially using the CLOCK, DATA,
and ENABLE inputs (pins 11, 12, and 13 respectively). A
serial data stream (DATA) on pin 12 is shifted into internal
shift registers by low to high transitions on the clock input
(CLOCK) at pin 11. A logic high (ENABLE) on pin 13 then
transfers the program information from the shift registers to
the divider latches.
The reference signal is applied to U402 pin 2 and divided by
the "R" divider. This divides the reference signal down to a
divided reference frequency (Fr). The typical reference frequency is 12.8 MHz and the typical divided reference frequency is 6.25 kHz providing for synthesizer steps of 6.25
kHz for use with both 12.5 kHz and 25 kHz channel spacing.
Other channel spacings are possible by providing proper
programming.
The "A" and "N" dividers process the loop feedback signal
provided by the VCO (by way of the dual modulus prescaler
U401). The output of the "N" divider is a divided version of
the VCO output frequency (Fv).
Synthesizer U402 also contains logic circuitry to control the
dual modulus prescaler U401. If the locked synthesizer
output frequency is 450 MHz. The prescaler output nominally will be equal to 3.515625 MHz (450 MHz/128). This
frequency is further divided down to Fv by the "N" divider
in U402. Fv is then compared with Fr in the phase detector
section.
The output of the second buffer (U501B) is applied to a loop
filter consisting of R506, R507, R508, C505 and C506. This
filter controls the bandwidth and stability of the synthesizer
loop. The UHF transmitter synthesizer has a loop bandwidth
of only several Hertz. This is very narrow, resulting in an
excessively long loop acquisition time. To speed acquisition,
switches U502A and U502C bypass the filter circuit whenever an ENABLE pulse is received by the Input Gates.
AUDIO FREQUENCY AMPLIFIER
The transmitter synthesizer audio input line is fed to U601A.
U601A is configured as a unity gain op-amp. Resistor R601
sets the 600 ohm input impedance of this amplifier. (NOTE:
Data for digital modulation is fed to the synthesizer through
the audio input line).
The amplifier output is split into two components and fed to
two variable resistors VR601 and VR602. VR601 sets the
level in the low frequency audio path and VR602 sets the
level in the high frequency audio path. (There is no clear
break between the low and high frequency ranges. All voice
frequencies are within the high frequency range. The low
frequency range contains low frequency data components).
The wiper of VR601 (low frequency path) connects to the
input of U601B, the pre-modulation integrator. U601B performs the function of a low-pass filter and integrator. The
integrator output is summed with the PLL control voltage at
the input of loop buffer amplifier U501B. This integrated
audio signal phase modulates the VCO. The combination of
pre-integration and phase modulation is equivalent to frequency modulation.
The wiper of VR602 (high frequency path) is connected to
the modulation input of the VCO through C16.
VOLTAGE REGULATORS
The phase detector output voltage is proportional to the
phase difference between Fv and Fr. This phase detector
output serves as the loop error signal. This error signal
voltage tunes the VCO to whatever frequency is required to
keep Fv and Fr locked (in phase).
U301 and U303 are monolithic voltage regulators (+5 Vdc
and -5 Vdc respectively). These two voltages are used by
synthesizer circuitry. The +5 V regulator output is also used
as a voltage reference for the +8 Vdc discrete regulator
circuit.
LOOP BUFFER AMPLIFIERS AND LOOP
FILTER
U302A, Q302 and associated circuitry comprise the +8 volt
regulator. Most module circuitry is powered from the +8 volt
line. The regulator is optimized for especially low noise
performance. This is critical because the low noise VCO is
powered by the +8 volt line.
The error signal provided by the phase detector output is
buffered by operational amplifiers (op-amp) U501A and
U501B. The audio modulation signal from U601B is also
applied to the input of U501B. The output of U501B is the
sum of the audio modulation and the buffered error signal.
The +8 Vdc line also feeds the +4 Vdc regulator, U302B and
associated resistors. The +4 Vdc regulator provides a bias
voltage for several op-amps in the module.
Figure 1 - Block Diagram
LBI-38671H
LOGIC CIRCUITS
Logic circuitry (other than that inside the synthesizer IC U402) consists of the following:
•
•
•
An address decoder
Input gates and level shifters
(Steps 5, 6, and 7 can be done using a modulation analyzer
or UHF receiver with 750 µs de-emphasis switchable in or
out.
1.
Apply +13.8 Vdc and -12 Vdc. Verify the current
drain on the 13.8 volt supply is, <300mA and the
current drain on the -12 volt supply is <20 mA.
•
1.
2.
Lock the synthesizer at 380 (G8), 450 (G3), 403 (G6),
425 (G7), 470 (G9) or 492 (G10) MHz. Adjust trimmer C1O until Vtest (23A) reads 2.5 (G3, G8), 2.0
(G6, G7, G9) or 3.0 (G10) V ±0.05V.
3.
Lock synthesizer at 460.0 (G3), 390.0 (G8), 414 (G6)
or 437.5 (G7), 482 (G9) or 502 (G10) MHz for the
following three adjustments.
•
•
•
Logic Levels:
Logic 1 = high = 4.5 to 5.5 Vdc
Logic 0 = Low = 0 to 0.5 Vdc
2.
AF Generator or Function Generator
3.
Modulation Analyzer; HP 8901A, or equivalent, or a
UHF receiver
4.
Oscilloscope; 20 MHz
5.
DC Meter; 10 meg ohm (for troubleshooting)
6.
Power Supply; 13.8 Vdc @ 350 mA
12.0 Vdc @ 25 mA
7.
Spectrum Analyzer; 0-1 GHz
8.
Frequency Counter; 10 MHz - 500 MHz
9.
Personal Computer (IBM PC compatible) to load frequency data
2.
Verify frequency = 470.0000 (G3), 425.000
(G6) or 450.000 (G7) MHz, 400.000 (G8),
494.000 (G9) or 512.000 (G10) ±200 Hz.
3.
Synthesizer data input stream is as follows:
4.
10-bit "N" divider MSB = N9 through "N"
divider LSB = N0
5.
A0
A6
LSB – – – – – MSB
N0
N9
LSB – – – – MSB
Measure AF response at 300 Hz, 1 kHz (ref) and 3
kHz, (de-emphasis off).
•
Set VR601 for 4.5 kHz peak deviation with 1.0
Vrms, 10 Hz (or 7 Hz for G3) sine wave audio
applied to module AF input.
Apply a 10 Hz 1.4 Vpk square wave to module AF
input. Adjust VR601 slightly for the flattest demodulated square wave using a modulation analyzer or receiver (no de-emphasis) and an
oscilloscope. The maximum net variation in voltage
over 1/2 cycle is 5%.
NOTE
8.
Verify lock at different frequencies.
Lock synthesizer at 380 (G8), 450 (G3), 403
(G6), 425 (G7), 470 (G9) or 492 (G10) MHz.
Verify LED is off.
b.
ANT_REL line must be logic low (0V) in order to
lock synthesizer.
Lock synthesizer at 385 (G8), 455 (G3), 408.5
(G6), 430 (G7), 476 (G9) or 497 (G10) MHz.
Verify LED is off.
c.
Synthesizer lock is indicated by the extinguishing
of the front panel LED indicator and a logic high
on the fault flag line (J3 pin 13C).
Lock synthesizer at 395 (G8), 465 (G3), 419.5
(G6), 445 (G7), 488 (G9) or 507 (G10) MHz.
Verify LED is off.
d.
Lock synthesizer at 400 (G8), 470 (G3), 425
(G6), 450 (G7), 494 (G9) or 512 (G10) MHz.
Verify LED is off.
Always verify synthesizer lock after each new data
loading.
This adjustment is critical for EDACS application
and must be reset at customer frequency.
Verify within ±1.5 dB with respect to 1 kHz
reference.
a.
For the transmitter synthesizer, 5 kHz channel spacing
R = 2560
N = integer part of (frequency in kHz)/(320)
A = (frequency in kHz)/(5) - 64*N
All numbers must be converted to binary.
•
Measure Hum and Noise relative to 0.44 kHz average
deviation, (de-emphasis on).
R13 ➞
Control B
•
•
Set VR602 for 4.5 kHz peak deviation with a standard modulating signal applied to the audio input.
Verify < -55dB
7.
R0
LSB
Measure AF distortion with standard modulating signal input.
Verify <2.5%.
Control Bit = 1
Last
Bit
Measure RF power output into 50 ohm load.
Verify 10 to 13 dBm (10 to 20 mW).
6.
Latched When
Data in ➞
Measure harmonic content.
•
Verify 2nd harmonic is < -30 dBc.
14-bit "R" divider most significant bit
(MSB) = R13 through "R" divider least significant bit (LSB) = R0
Latched When Control Bit = 1
DATA ENTRY FORMAT
•
Measure output frequency.
Transmitter Synthesizer Address = A0 A1 A2 =
110
Single high Control bit (last bit)
The following test equipment is required to test the synthesizer
Module:
RF signal source for 12.8 MHz, 0 dBm reference (included with item 10)
Verify lock (flag = high).
Verify front panel LED is off.
7-bit "A" divider MSB = A6 through "A"
divider LSB = A0
RECOMMENDED TEST EQUIPMENT
1.
Lock synthesizer at 470.0 (G3), 430 (G6), 450 (G7),
400 (G8), 494 (G9) or 512 (G10) MHz using software
provided in the service parts kit.
Standard Modulating Signal = 1 kHz sinusoidal
voltage, 0.6 Vrms at the module input terminals
(600 ohm Rin).
The Fault Indicator circuitry indicates when the synthesizer is
in an out-of-lock condition. The fault detector latches, U705A
and U705B are reset by the enable pulse during initial loading
of data into the synthesizer. If at any time afterwards the lock
detector signal (LD) goes low, the high output of U705B will
cause the output of gates U705C and U705D to go low. The
low output from U705C causes Q704 to conduct turning on the
front panel LED (CR701). The output of U705D (FLAG) is
connected to J3-13C for external monitoring of the Synthesizer
Module. A logic low on the FLAG line indicates an out-of-lock
condition.
MAINTENANCE
ALIGNMENT PROCEDURE
The following service information applies when
aligning, testing, or troubleshooting the TX Synthesizer:
Lock Indicator circuitry
The address decoder, U702, enables the Input Gates when the
A0, A1, and A2 input lines receive the proper logic code (110
for the transmitter synthesizer). After receiving the proper
code, Y3 (U702-12) sends a logic low signal to U701C. U701C
acts as an inverter and uses the logic high output to turn on
Input Gates U701A, U701B, and U701D. The Input Gates
allow the clock, data and enable information to pass on to the
synthesizer via the level shifters. The Level Shifter Transistors
Q701, Q702 and Q703 convert the 5 volt gate logic level to the
8 volt logic level required by the synthesizer U402.
TEST PROCEDURE
SERVICE NOTES
TROUBLESHOOTING
A troubleshooting guide is provided showing typical measurements at the various test points.
10. Service Parts Kit, (TQ-0650), (includes software for
loading frequency data)
PARTS LIST
LBI-38671H
UHF TRANSMITTER SYNTHESIZER MODULE
19D902780G3, G6 - G10
ISSUE 9
TROUBLESHOOTING GUIDE
SYMPTOM
SYNTHESIZER FAILS TO LOCK
CHECK
(CORRECT READINGS SHOWN)
Check DC voltages
+5 V @ U301 Pin 1
+8 V @ Q301 collector
-5 V @ U303 Pin 1
Check 12.8 MHz reference signal
3V P-P, 12.8 MHz @ U402 Pin 2
INCORRECT READING INDICATES
DEFECTIVE COMPONENT
U301 or associated components
U302, Q301, Q302 or associated
components
U303 or associated components
No reference signal to front panel BNC or
Q401
SYMBOL
11.5 ±1.5 dBm 435 to 485 MHz at
front panel BNC
U202, U401
Check CLOCK, DATA, ENABLE
While loading frequency data into
synthesizer Check 8V logic signals
@ Pins 11, 12, 13 of U402
Wrong address or
U701, U702, Q701, Q702, Q703
Check Phase detector output
6.25 kHz random signal @ U501
Pin 7
Low/No RF Output
LESS than 0.5 Vdc @ collector of
Q101
Synthesizer not keyed (low on ANT relay
line) or Q101, Q102
Check RF chain
No Modulation
Check AF amplifier
Apply IV, 1 kHz signal to
TX/Audio/Hi
Check IV signal @ U601 Pin 1
U601
C202
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
C203
19A705205P2
Tantalum: 1 uF, 16 VDCW; sim to Sprague 293D.
19A702061P61
- - - - - - - - - MISCELLANEOUS - - - - - - - - -
C204
and
C205
Ceramic: 100 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM.
C206
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
C207
19A705205P2
Tantalum: 1 uF, 16 VDCW; sim to Sprague 293D.
C208
19A702236P28
Ceramic: 12 pF + or - 5%, 50 VDCW, temp coef 0
+ or -30 PPM.
C209
19A702236P10
Ceramic: 2.2 pF + or -2.5 pF, 50 VDCW, temp
+ or -30 PPM/°C. (Used in G3, G6, G7, G8).
C209
19A702236P8
Ceramic: 1.5 pF + or -0.25 pF, 50 VDCW, temp
+ or -30 PPM/°C. (Used in G9 & G10).
DESCRIPTION
19D902508P4
19D902509P2
Chassis.
Cover.
19D902555P1
Handle.
19A702381P506
Screw, thread forming: TORX, No. M3.5-.6 x 6.
19A702381P513
Screw, thread forming: TORX, No. M3.5 - 0.6 X 13.
11
19A702381P508
Screw, thd. form: No. 3.5-0.6 x 8.
12
19D902824P1
Casting.
- - - - - - - - - - CAPACITORS - - - - - - - - -
C1
19A702236P25
Ceramic: 10 pF + or -.5 pF, 50 VDCW, temp coef
+ or -30 PPM/°C.
C210
19A702236P28
Ceramic: 12 pF + or - 5%, 50 VDCW, temp coef 0
+ or -30 PPM.
C2
19A702236P32
Ceramic: 18 pF + or -5%, 50 VDCW, temp coef 0 +
+ or or -30 PPM
19A702061P61
Ceramic: 100 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM.
C3
19A702236P28
Ceramic: 12 pF + or - 5%, 50 VDCW, temp coef 0
+ or -30 PPM.
C211
and
C212
C213
19A705205P2
Tantalum: 1 uF, 16 VDCW; sim to Sprague 293D.
C4
19A702236P1
Ceramic: 0.5 pF + or - pF, temp coef 0
+ or - PPM/°C. (Used in G8).
C214
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
C4
19A702236P8
Ceramic: 1.5 pF + or -.25 pF, 50 VDCW.
(Used in G3, G6, G7)
C215
19A702061P61
Ceramic: 100 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM.
C4
and
C5
19A702236P17
Ceramic: 4.7 pF + or -0.5%, 50 VDCW, temp coef 0
+ or -60 PPM. (Used in G9).
C301
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
C4
19A702236P11
Ceramic: 2.7 pF + or - .25 pF, 50 VDCW, temp coef 0
+ or -30 PPM/°C. (Used in G10).
C302
19A702052P14
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
C303
and
C304
19A705205P2
Tantalum: 1 uF, 16 VDCW; sim to Sprague 293D.
C305
19A705205P7
Tantalum: 10 uF, 25 VDCW; sim to Sprague 293D.
C306
19A705205P2
Tantalum: 1 uF, 16 VDCW; sim to Sprague 293D.
C307
19A705205P6
Tantalum: 10 uF, 16 VDCW; sim to Sprague 293D.
C308
and
C309
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
C310
19A705205P6
Tantalum: 10 uF, 16 VDCW; sim to Sprague 293D.
C311
19A705205P2
Tantalum: 1 uF, 16 VDCW; sim to Sprague 293D.
C312
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
C313
19A705205P6
Tantalum: 10 uF, 16 VDCW; sim to Sprague 293D.
C401
19A702052P14
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
C402
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
C403
thru
C405
19A702052P14
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
C406
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
C407
19A702052P14
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
C408
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
C409
19A705205P6
Tantalum: 10 uF, 16 VDCW; sim to Sprague 293D.
C410
19A702052P26
Ceramic: 0.1uF + or - 10%, 50 VDCW
C411
19A705205P6
Tantalum: 10 uF, 16 VDCW; sim to Sprague 293D.
C412
19A702052P14
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
C413
19A702052P108
Ceramic: 0.01 uF + or -10%, 50 VDCW.
C414
19A702061P69
Ceramic: 220 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
C501
19A705205P2
Tantalum: 1 uF, 16 VDCW; sim to Sprague 293D.
C502
19A705205P2
Tantalum: 1 uF, 16 VDCW; sim to Sprague 293D.
C503
19A702052P33
Ceramic: 0.1 uF + or -10%, 50 VDCW.
C5
19A702236P17
Ceramic: 4.7 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM. (Used in G3 & G10).
C5
19A702236P17
Ceramic: 4.7 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM. (Used in G6 & G8).
C5
19A702236P15
Ceramic: 3.9 pF + or -.25 pF, 50 VDCW, temp
+ or -30 PPM/°C. (Used in G7).
C6
19A702236P28
Ceramic: 12 pF + or - 5%, 50 VDCW, temp coef 0
+ or -30 PPM. (Used in G8 & G3).
C6
19A702236P30
Ceramic: 15 pF + or -5%, 50 VDCW, temp coef 0 +
or -30 PPM/°C. (Used in G6 & G7).
*C6
19A702236P28
Ceramic: 12 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C. (Used in G9 & G10).
U402, U501
Check oscillator
C7
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
C8
19A702052P14
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
C9
19A705205P6
Tantalum: 10 uF, 16 VDCW; sim to Sprague 293D.
C10
19A134227P5
Variable: 1.5 to 14 pF, 100 VDCW.
C11
19A705205P2
Tantalum: 1 uF, 16 VDCW; sim to Sprague 293D.
C12
19A702052P14
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
C13
and
C14
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
*C15
19A700004P6
Metallized polyester: 4.7 uF + or - 10%, 63 VDCW.
*C16
19A702052P106
Ceramic: 1500 pF + or -5%, 50 VDCW.
C17
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
C18
and
C19
19A705205P2
C101
19A702061P99
Tantalum: 1 uF, 16 VDCW; sim to Sprague 293D.
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
C102
19A705205P2
Tantalum: 1 uF, 16 VDCW; sim to Sprague 293D.
C103
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
*COMPONENTS, ADDED, DELETED OR CHANGED BY PRODUCTION CHANGES
DESCRIPTION
Ceramic: 100 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM.
TRANSMITTER SYNTHESIZER BOARD
19D902779G3, G6 - G10
Check prescaler output
IV P-P, 3.5 MHz @ U401 Pin 4
PART NO.
19A702061P61
PART NO.
Check oscillator signal
Proceed to "Low/No RF output" below
SYMBOL
C201
PARTS LIST
SYMBOL
PART NO.
DESCRIPTION
SYMBOL
PART NO.
DESCRIPTION
PART NO.
DESCRIPTION
C504
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
L1
19C851001P1
Coil, RF: sim to Paul Smith SK901-1.
(Used in G3, G7).
19B800607P331
Metal film: 330 ohms + or -5%, 1/8 w.
C505
19A703684P3
Metalized polyester: 2.2 uF + or - 10$, 50 VDCW.
R212
and
R213
L2
19A705470P28
Coil, Fixed: 1.8 uH; sim to Toko 380LB-1R8M.
(Used in G9 & G10).
*R214
19B800607P120
Metal film: 12 ohms + or -5%, 1/8 w. (Used in G9 &
G10)
L2
thru
L5
19A705470P24
Coil, Fixed: 0.82 uH; sim to Toko 380NB-R82M.
(Used in G3, G6 - G8).
R214
19B800607P150
Metal film: 15 ohms + or -5%, 1/8 w. (Used in G3,
G6-G8)
L10
19C851001P4
Coil, RF. (Used in G9, G10).
R215
19B800607P331
19A705470P15
Coil, fixed: 0.15uH; sim to Toko 380NB-R15M.
R216
C506
19A703902P3
Metal: 0.047 uF + or -10%, 50 VDCW.
C507
19A702052P33
Ceramic: 0.1 uF + or -10%, 50 VDCW.
C602
C603
19A705205P6
19A702061P99
Tantalum: 10 uF, 16 VDCW; sim to Sprague 293D.
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
SYMBOL
LBI-38671H
SYMBOL
PART NO.
DESCRIPTION
R601
19A702931P176
Metal film: 604 ohms + or -1%, 200 VDCW, 1/8 w.
R602
and
R603
19B800607P104
Metal film: 100K ohms + or -5%, 1/8 w.
R604
19B800607P470
Metal film: 47 ohms + or -5%, 1/8 w.
R605
19B800607P104
Metal film: 100K ohms + or -5%, 1/8 w.
Metal film: 330 ohms + or -5%, 1/8 w.
R606
19B800607P680
Metal film: 68 ohms + or -5%, 1/8 w.
19B800607P510
Metal film: 51 ohms + or -5%, 1/8 w.
R607
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
R217
19B800607P220
Metal film: 22 ohms + or -5%, 1/8 w.
R608
19B800607P392
Metal film: 3.9K ohms + or -5%, 1/8 w.
C604
19A705205P2
Tantalum: 1 uF, 16 VDCW; sim to Sprague 293D.
L201
and
L202
C605
19A703684P3
Metalized polyester: 2.2 uF + or - 10$, 50 VDCW.
L203
19A705470P1
Coil, Fixed: 10 nH; sim to Toko 380NB-10nM.
R218
19B800607P330
Metal film: 33 ohms + or -5%, 1/8 w.
R609
19B800607P472
Metal film: 4.7K ohms + or -5%, 1/8 w.
C701
thru
C712
19A702061P61
Ceramic: 100 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM.
L204
19A705470P10
Coil, fixed: 56 nH; sim to Toko 380NB-56nM.
R219
19B800607P181
Metal film: 180 ohms + or -5%, 1/8 w.
R610
19B800607P105
Metal film: 1M ohms + or -5%, 1/8 w.
L205
19A705470P1
Coil, Fixed: 10 nH; sim to Toko 380NB-10nM.
R220
19B800607P104
Metal film: 100K ohms + or -5%, 1/8 w.
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
C714
and
C715
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
L206
19A705470P15
Coil, fixed: .15uH; sim to Toko 380NB-R15M.
19B800607P330
Metal film: 33 ohms + or -5%, 1/8 w.
19A705470P2
Coil, Fixed: 12 nH; sim to Toko 380NB-12nM.
R707
19B800607P472
Metal film: 4.7K ohms + or -5%, 1/8 w.
C801
19A702061P4
Ceramic: 1.8 pF + or - 0.5 pF, 50 VDCW, temp
or - 250 PPM.
L801
thru
L803
R221
and
R222
R701
thru
R706
R301
thru
R303
19B800607P100
Metal film: 10 ohms + or -5%, 1/8 w.
R708
and
R709
19B800607P473
Metal film: 47K ohms + or -5%, 1/8 w.
R304
19B800607P470
Metal film: 47 ohms + or -5%, 1/8 w.
Metal film: 10K ohms + or -5%, 1/8 w.
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
R710
thru
R712
19B800607P103
R305
R306
19B800607P222
Metal film: 2.2K ohms + or -5%, 1/8 w.
R720
19B800607P392
Metal film: 3.9K ohms + or -5%, 1/8 w.
R307
19A702931P230
Metal film: 2000 ohms + or -1%, 200 VDCW, 1/8 w.
R721
19B800607P562
Metal film: 5.6K ohms + or -5%, 1/8 w.
R308
19A702931P249
Metal film: 3160 ohms + or -1%, 200 VDCW, 1/8 w.
R722
19B800607P473
Metal film: 47K ohms + or -5%, 1/8 w.
R309
19B800607P471
Metal film: 470 ohms + or -5%, 1/8 w.
R723
19B800607P391
Metal film: 390 ohms + or -5%, 1/8 w.
R310
19B800607P470
Metal film: 47 ohms + or -5%, 1/8 w.
R724
19B800607P101
Metal film: 100 ohms + or -5%, 1/8 w.
R311
and
R312
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
R801
thru
R803
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
R401
19B800607P330
Metal film: 33 ohms + or -5%, 1/8 w.
Metal film: 100 ohms + or -5%, 1/8 w.
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
R804
thru
R806
19B800607P101
- - - - - - - - - - RESISTORS - - - - - - - - - -
R402
Metal film: 47 ohms + or -5%, 1/8 w.
R403
19B800607P104
Metal film: 100K ohms + or -5%, 1/8 w.
R807
19B800607P182
Metal film: 1.8K ohms + or -5%, 1/8 w.
19B800607P561
Metal film: 560 ohms + or -5%, 1/8 w.
R808
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
Metal film: 27 ohms + or -5%, 1/8 w.
- - - - - - - - - - TRANSISTORS - - - - - - - - -
C802
19A705205P6
Tantalum: 10 uF, 16 VDCW; sim to Sprague 293D.
Q1
19A702524P2
N-Type, field effect; sim to MMBFU310.
C803
and
C804
19A702052P14
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
Q101
19A700076P2
Silicon, NPN: sim to MMBT3904, low profile.
Q102
19A700059P2
Silicon, PNP: sim to MMBT3906, low profile.
C805
19A702061P99
Q301
19A134577P2
Silicon, PNP: sim to Phillips BCX51-16.
C806
C807
C808
19A702061P65
19A705205P6
19A702052P14
C809
19A702061P13
C810
19A702052P14
C811
19A702061P99
C812
19A702061P13
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
Ceramic: 150 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
Tantalum: 10 uF, 16 VDCW; sim to Sprague 293D.
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
Ceramic: 10 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM.
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
Ceramic: 3.3 pF + or - 0.25 pF, temp
or - 30 PPM/°C. (Used in G8).
Q302
Q401
Q501
19A700076P2
19A704708P2
19A700076P2
Q701
thru
Q704
19A700076P2
Q801
thru
Q803
19A704708P2
R1
19B800607P470
Silicon, NPN: sim to MMBT3904, low profile.
Silicon, NPN: sim to NEC 2SC3356.
Silicon, NPN: sim to MMBT3904, low profile.
Silicon, NPN: sim to MMBT3904, low profile.
Silicon, NPN: sim to NEC 2SC3356.
R2
19B800607P183
Metal film: 18K ohms + or -5%, 1/8 w.
R404
C812
19A702061P5
Ceramic: 2.2 pF + or - 0.5 pF, 50 VDCW, temp
or - 120 PPM. (Used in G6, G7, G3).
R3
19B800607P680
Metal film: 68 ohms + or -5%, 1/8 w.
R405
19B800607P510
Metal film: 51 ohms + or -5%, 1/8 w.
R809
19B800607P270
C813
and
C814
19A702061P21
Ceramic: 15 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM. . (Used in G6, G7, G3).
R4
and
R5
19B800607P100
Metal film: 10 ohms + or -5%, 1/8 w.
R406
19B800607P101
Metal film: 100 ohms + or -5%, 1/8 w.
R810
19B800607P101
R407
19B800607P104
Metal film: 100K ohms + or -5%, 1/8 w.
C813
and
C814
19A702061P32
Ceramic: 18 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM/°C. (Used in G8).
R6
19B800607P824
Metal film: 820K ohms + or -5%, 1/8 w.
R408
19B800607P100
Metal film: 10 ohms + or -5%, 1/8 w.
U201
19A705927P1
Silicon, bipolar: sim to Avantek MSA-0611.
R7
19B800607P104
Metal film: 100K ohms + or -5%, 1/8 w.
R409
19B800607P222
Metal film: 2.2K ohms + or -5%, 1/8 w.
U202
344A3907P1
Integrated circuit, MMIC: sim to Avantek MSA-1105.
C813
and
C814
19A702236P28
Ceramic: 12 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM. . (Used in G9 & G10).
R8
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
R410
19B800607P392
Metal film: 3.9K ohms + or -5%, 1/8 w.
U203
19A705927P1
Silicon, bipolar: sim to Avantek MSA-0611.
R9
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w. (Used in G9).
R411
19B800607P562
Metal film: 5.6K ohms + or -5%, 1/8 w.
U301
19A704971P9
Positive Voltage Regulator, 5 volt; sim to MC78L05ACD.
R9
19B800607P681
Metal film: 680 ohms + or -5%, 1/8 w.(Used in G3, G7-G8).
R412
19B800607P223
Metal film: 22K ohms + or -5%, 1/8 w.
(Used IN G3, G6, G7, G8).
U302
19A116297P7
Linear: Dual Op Amp; sim to MC4558CD.
R9
19B800607P152
Metal film: 1.5K ohms + or -5%, 1/8 w. (Used in G6).
U303
19A704971P7
U401
19A149944P201
Voltage Regulator, Negative: sim to Motorola
MC79L05ACD.
Dual Modulus Prescaler: sim to Motorola
MC12022A.
U402
19B800902P5
Synthesizer, custom: CMOS, serial input.
U501
344A3070P1
Dual Operational Amplifier: sim to Motorola TL072.
U502
19A702705P4
Digital: Quad Analog Switch/Multiplexer.
U601
19A116297P7
Linear: Dual Op Amp; sim to MC4558CD.
U701
19A703483P302
Digital: Quad 2-Input NAND Gate; sim to 74HC00.
Digital: 3-Line To 8-Line Decoder; sim to
74HC138.
- - - - - - - - - - - DIODES - - - - - - - - - CR701
19A703595P10
Optoelectic: Red LED; sim to HP HLMP-1301-010.
D1
19A705377P1
Silicon, Hot Carrier: sim to MMB0201. (Used in
G40, G3, G6,
R101
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
D2
and
D3
19A149674P3
High tuning ratio diode: sim to Toko KV1430.
R102
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
R415
19B800607P100
Metal film: 10 ohms + or -5%, 1/8 w.
Metal film: 47K ohms + or -5%, 1/8 w.
R501
19B800607P470
Metal film: 47 ohms + or -5%, 1/8 w.
R103
- - - - - - - - - - - FILTERS - - - - - - - - - -
FL201
19A705458P8
Filter: 378-402 MHz; sim to
302MXPR-1785A (Used in G8).
19B800607P473
R412
19B800607P823
Metal film: 82K ohms + or -5%, 1/8 w.
(Used in G9 & G10).
R104
19B800607P472
Metal film: 4.7K ohms + or -5%, 1/8 w.
R502
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
R105
19B800607P392
Metal film: 3.9K ohms + or -5%, 1/8 w.
R503
19B800607P223
Metal film: 22K ohms + or -5%, 1/8 w.
Metal film: 18 ohms + or -5%, 1/8 w.
R504
19B800607P150
Metal film: 15 ohms + or -5%, 1/8 w.
R505
19B800607P104
Metal film: 100K ohms + or -5%, 1/8 w.
FL201
19A705458P5
Helical, UHF: 424-450 MHz. (Used in G7).
FL201
19A705458P4
Helical, UHF: 403-425 MHz. (Used in G6).
R201
and
R202
FL201
19A705458P1
Helical, UHF: 450-470 MHz. (Used in G3)
R203
19B800607P150
Metal film: 15 ohms + or -5%, 1/8 w.
R506
19B800607P105
Metal film: 1M ohms + or -5%, 1/8 w.
FL201
19A705458P6
Helical, UHF: 492-512 MHz. (Used in G10)
R204
19B800607P101
Metal film: 100 ohms + or -5%, 1/8 w.
R507
19B800607P183
Metal film: 18K ohms + or -5%, 1/8 w.
(Used IN G3, G6, G7, G8).
U702
19A703471P320
- - - - - - - - - - - JACKS - - - - - - - - - - -
R205
19B800607P331
Metal film: 330 ohms + or -5%, 1/8 w.
*R507
19B800607P393
19A703483P302
R206
19B800607P150
Metal film: 15 ohms + or -5%, 1/8 w.
Metal film: 39K ohms + or -5%, 1/8 w.
(Used in G9 & G10).
U705
Connector, receptacle.
J1
and
J2
19A115938P24
J3
19B801587P7
Connector, DIN: 96 male contacts, right angle
to AMP 650887-1.
- - - - - - - - - - INDUCTORS - - - - - - - - - -
19B800607P180
R207
19B800607P331
Metal film: 330 ohms + or -5%, 1/8 w.
R208
19B800607P181
Metal film: 180 ohms + or -5%, 1/8 w.
R209
19B800607P750
Metal film: 75 ohms + or -5%, 1/8 w.
R210
19B800607P331
Metal film: 330 ohms + or -5%, 1/8 w.
L1
19C851001P3
Coil, RF: 1 1/2 Turns, sim to Paul Smith
SK-901-1. (Used in G8).
*R211
19B800607P120
Metal film: 12 ohms + or -5%, 1/8 w. (Used in G9 & G10)
L1
19C851001P2
Coil, RF: sim to Paul Smith SK-901-1. (Used in G6).
R211
19B800607P150
Metal film: 15 ohms + or -5%, 1/8 w. (Used in G3, G6-G8)
R508
19B800607P333
Metal film: 33K ohms + or -5%, 1/8 w.
(Used IN G3, G6, G7, G8).
R508
19B800607P823
Metal film: 82K ohms + or -5%, 1/8 w.
(Used in G9 & G10).
R509
19B800607P473
Metal film: 47K ohms + or -5%, 1/8 w.
R510
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
R511
19B800607P101
Metal film: 100 ohms + or -5%, 1/8 w.
Metal film: 100 ohms + or -5%, 1/8 w.
- - - - - - - - INTEGRATED CIRCUITS - - - - - - -
Digital: Quad 2-Input NAND Gate; sim to 74HC00.
- - - - - - - - VOLTAGE REGULATORS - - - - - - -
VR601
and
VR602
19B235029P7
5 Turn Cermet Trimmer: 5K ohms, + or - 10%, .5w,
sim to 3296W-1502-R.
PRODUCTION CHANGES & IC DATA
LBI-38671H
PRODUCTION CHANGES
Changes in the equipment to improve or to simplify circuits are identified by a
"Revision Letter", which is stamped after the model number of the unit. The
revision stamped on the unit includes all previous revisions. Refer to the Parts
List for descriptions of parts affected by these revisions.
U201 and U203
19A705927P11
Silicon Bipolar MMIC
U202
344A3907P1
Silicon Bipolar MMIC
U301
19A704971P9
+5V Regulator
U303
19A704971P7
-5V regulator
REV. A - TRANSMITTER SYNTHESIZER BOARD 19D902779G3,6,7
To correct loading problem on synth IC which could cause failure to lock
on channel.
R707 was 47k ohms (19B800607P473).
REV. B - TRANSMITTER SYNTHESIZER BOARD 19D902779G3, G6-G7
REV. A - TRANSMITTER SYNTHESIZER BOARD 19D902779G8
To make new band splits compatible with helical filters. New PWB.
C15 was 0.1 µF (19A700004P2).
C16 was 330 pF (19A702061P73).
REV. A - TRANSMITTER SYNTHESIZER BOARD 19D902779G9
REV. B - TRANSMITTER SYNTHESIZER BOARD 19D902779G8
REV. C - TRANSMITTER SYNTHESIZER BOARD 19D902779G3, G6, G7
To meet hum & noise performance.
R101 was 47K ohm (19B800607P473).
C16 was 1500 pF (19A702061P89).
R9 was 680 ohm (19B800607P681) for G9.
R211 was 15 ohm (19B800607P150) for G9.
R214 was 15 ohm (19B800607P150) for G9.
R507 was 27K ohm (19B800607P150) for G9.
C5 was 3.9 pF (19A702236P15) for G9.
C6 was 18 pF (19A702236P32) for G9.
PWB was R1 return to R0.
REV. D - TRANSMITTER SYNTHESIZER BOARD 19D902779G3
To improve performance, C5 was 3.3 pF (19A702236P13).
REV. D - TRANSMITTER SYNTHESIZER BOARD 19D902779G6
To improve VCO tuning range, R9 was 680 ohms (19B800607P681).
REV. C - TRANSMITTER SYNTHESIZER BOARD 19D902779G8
To improve output level a wire was soldered between pins 3 and 4 and
between pins 9, 10 and 17 of FL101.
REV. A - TRANSMITTER SYNTHESIZER BOARD 19D902779G10
Adjust tuning range, C4 changed from 4.7 pF (19A702236P17) to 2.7
pF (19A702236P11).
U302 & U601
19A116297P7
Dual Wide Band Op-Amp
U501
344A3070P1
Operational Amplifier
LBI-38671H
IC DATA
U401
19A149944P201
Dual Modulus Prescaler
U402
19B800902P5
Synthesizer
U701 & U705
19A703483P302
Quad 2-Input NAND Gate
U702
19A703471P120
Address Decoder
U502
19A702705P4
Quad Analog Switch
OUTLINE DIAGRAM
LBI-38671H
COMPONENT SIDE
SOLDER SIDE
(19D902779, Sh. 2, Rev. 9)
(19D903361, Layer 1 & 4, Rev. 0)
UHF TRANSMITTER
SYNTHESIZER BOARD
19D902779G3, G6 - G10
SCHEMATIC DIAGRAM
LBI-38671H
UHF TRANSMITTER SYNTHESIZER
19D902780G3, G6 - G10
(19D903363, Sh. 1, Rev. 10)
LBI-38671H
UHF TRANSMITTER SYNTHESIZER
19D902780G3, G6 - G10
(19D903363, Sh. 2, Rev. 10)
10
SCHEMATIC DIAGRAM
SCHEMATIC DIAGRAM
LBI-38671H
UHF TRANSMITTER SYNTHESIZER
19D902780G3, G6 - G10
(19D903363, Sh. 3, Rev. 10)
11
LBI-38672J
MAINTENANCE MANUAL
FOR
UHF RECEIVER SYNTHESIZER MODULE
19D902781G3, G7, G8, G10, G12
TABLE OF CONTENTS
Page
DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Front Cover
GENERAL SPECIFICATIONS . . . . . . . . . .
CIRCUIT ANALYSIS . . . . . . . . . . . . . . .
VOLTAGE CONTROLLED OSCILLATOR .
FREQUENCY DOUBLER . . . . . . . . . .
RF AMPLIFIERS . . . . . . . . . . . . . . .
REFERENCE OSCILLATOR AND BUFFER
PRESCALER AND SYNTHESIZER . . . . .
LOOP FILTER . . . . . . . . . . . . . . . . .
DIGITAL CONTROL . . . . . . . . . . . . .
VOLTAGE REGULATORS . . . . . . . . . .
MAINTENANCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TEST AND ALIGNMENT PROCEDURE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TROUBLESHOOTING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
OUTLINE DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PARTS LIST . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PRODUCTION CHANGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IC DATA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ASSEMBLY DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
SCHEMATIC DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
DESCRIPTION
The Receiver Synthesizer Module, 19D902781G3, G7,
G8, G10 or G12 provides the local oscillator signal (LO) to
the Receiver Front End Module of the MASTR III base
station. The module also provides the reference oscillator
signal to the transmitter synthesizer.
Figure 1 is a block diagram of the Receiver Synthesizer
Module. The synthesizer is connected in a phase-locked loop
(PLL) configuration. The synthesizer°s output is generated
by the VCO, Q1, and multiplier Q16. It°s then buffered by
the Monolithic Microwave Integrated Circuit (MMIC) U2.
The logic signals from the controller (U10, U12, and
U13) control the synthesizer frequency. Frequency stability
is maintained by using either the internal reference oscillator
Y1 or applying an external high precision reference signal
to the EXT Reference Oscillator Port J4. The internal reference oscillator, Y1, is a temperature controlled crystal oscillator (TCXO) operating at 12.8 MHz. The oscillator has a
stability of ±1.0 ppm over the temperature range of -30°C to
+75°C.
The multiplier output is sampled by the resistive splitter
and conditioned by buffer amplifier U3. It is then fed to the
divide by 128/129 dual modulus prescaler U5. The divided
output from the prescaler is connected to the Fin input of the
PLL U6. Within the PLL the divided multiplier input signal
Fin is divided again. The PLL also divides down the 12.8
MHz reference signal. Three inputs from the controller;
ENABLE, CLOCK, and serial DATA program the PLL divider circuits.
Ericsson Inc.
Private Radio Systems
Mountain View Road
Lynchburg,Virginia 24502
1-800-528-7711
(Outside USA, 804-592-7711)
Printed in U.S.A.
LBI-38672J
The divided reference signal and the divided multiplier
signal are compared in the PLL phase detector. When the
reference and multiplier signals are identical the PLL phase
detector generates a constant DC output voltage. This voltage
is buffered by U8 and filtered by the loop filter circuit. It is then
applied to Q1 setting the VCO on frequency.
If the compared frequencies (phases) differ, an error voltage
is generated which adjusts the VCO frequency. During this
out-of-lock condition, the PLL also sends a Lock Detect (LD)
signal to the controller and lights the FAULT LED on the front
panel of the module.
Table 1 - General Specifications
FREQUENCY TUNING
Mechanical
SPECIFICATION
INJECTION FREQ
424.4 MHz-451.4 MHz (G3)
446.4 MHz-472.6 MHz (G7)
401.4 MHz-421.4 MHz (G8)
470.6 MHz-490.6 MHz (G10)
391.4 MHz-421.4 MHz (G12)
Electrical
Full Specifications
Degraded Specifications
2 MHz
3 MHz
Channel Spacing
6.25 kHz
FREQUENCY STABILITY
±1.5 ppm
LO POWER OUTPUT
2.0 dBm ±2 dBm
LO NOMINAL IMPEDANCE
50 ohms
PHASE NOISE
@ 25 kHz Offset
>-137 dBc/Hz
HUM AND NOISE
Companion Receiver
-55 dB
HARMONICS @ LO PORT
<-30 dBc
SWITCHING SPEED
<50 ms
CURRENT DRAIN
+13.8V
+12V
<200 mA
<50 mA
REFERENCE OSCILLATOR
Frequency Output
Power Output
Impedance
12.8 MHz ±1.5 dBm
1 dBm ±2 dBm
50 ohms
EXT. REFERENCE OSCILLATOR
Frequency
Power
Impedance
FREQ. BAND
450-470 MHz, 403-425 MHz
425-450 MHz, 470-495 MHz
380-400 MHz
492-512 MHz
370-390 MHz
Figure 1 - Receiver Synthesizer Block Diagram
ITEM
5.00 MHz to 17.925 MHz (must be integer
divisible by the channel spacing)
+10 dBm ±3 dBm into 50 ohms
50 ohms
This manual is published by Ericsson Inc., without any warranty. Improvements and changes to this manual necessitated by typographical errors,
inaccuracies of current information, or improvements to programs and/or equipment, may be made by Ericsson Inc., at any time and without
notice. Such changes will be incorporated into new editions of this manual. No part of this manual may be reproduced or transmitted in any form
or by any means, electronic or mechanical, including photocopying and recording, for any purpose, without the express written permission of
Ericsson Inc.
Copyright© June 1992 Ericsson GE Mobile Communications Inc.
LBI-38672J
CIRCUIT ANALYSIS
The Receiver Synthesizer Module consists of the following circuits:
•
•
•
•
•
•
•
•
Voltage Controlled Oscillator
Multiplier (Frequency Doubler)
Buffer Amplifiers
Reference Oscillator and Buffer
Prescaler and Synthesizer
Loop Filter
Digital Control
Voltage Regulators
RF AMPLIFIERS
PRESCALER AND SYNTHESIZER IC
LOOP FILTER
The RF chain begins with a resistive splitter (R13, R17,
R18, R96, R97, R99 and R100). The output of the splitter at
R99 is attenuated by 7.5 dB and provides impedance matching to Helical Filter FL1 which is tuned to pass the LO
Frequency while rejecting harmonics by about 40 dB. The
output of FL1 is fed thru resistive pad R12, R14 and R15 to
MMIC Amp U2 which operates in compression. Output
Amp U2 is followed by a bandpass filter (L13-L15, C86, C87
and C101) and resistive attenuator (R30, R101 and R102).
The final output at the front panel BNC connector J2 is
nominally 1.5 dBm and drives the Receiver Front End LO
input.
The integrated circuit U6 is the heart of the synthesizer. It
contains the necessary frequency dividers and control circuitry
to synthesize output frequencies by the technique of dual
modulus prescaling. U6 also contains an analog sample and
hold phase detector and a lock detector circuit.
The error signal, ANOUT, is applied to the loop filter at
U8.2 pin 5 and U8.1 pin 3. U8.2 acts as a buffer amplifier with
gain. The output signal from the amplifier is applied to a loop
filter consisting of R42, R43, R44, C35 and C36 via the
bilateral switch U14. The filter removes noise and sampling
frequencies from the error voltage. The switch, U14, selects the
proper filter configuration for operation in the narrow band,
wide band or tuning mode. The control signals (OPEN_LOOP,
ENABLE_NOT, and TUNE_CTRL) for U14 are derived from
the digital control circuits U10, U12, and U13. U8.1 provides
a buffered output for testing at the DIN connector on the rear
of the module.
The other output at the resistive splitter at R100 is attenuated by 20 dB and drives buffer amp U3 into compression.
U3 drives the synthesizer prescaler, providing a feedback
signal for the synthesizer phase locked loop.
VOLTAGE CONTROLLED OSCILLATOR
REFERENCE OSCILLATOR AND BUFFER
The free running Voltage Controlled Oscillator (VCO) is
composed of a grounded-gate JFET (Q1) and associated
circuitry. Inductor L10 and associated capacitors form the
resonant tank circuit. The circuit’s use of high-Q components
minimizes phase noise.
Frequency tuning of the VCO is done by changing the
DC output voltage level from the loop filter U14. The Loop
Filter Out signal from U14 is routed through L4 and R3 and
applied to the two varicap diodes D4 and D5. The voltage
level applied determines the diodes’ capacitance and sets the
resonant frequency of the oscillator. If the VCO drifts or the
frequency is changed, the DC voltage level changes causing
the VCO’s resonant frequency to change. The output of the
oscillator is then applied to a buffer amplifier. Course adjustment of frequency is done by adjusting trimmer capacitor
C52 while applying a calibration voltage to the V_TUNE line
connected to U14.4 pin 11.
FREQUENCY DOUBLER
Transistors Q14 and Q15 form a buffer stage to drive
transistor multiplier Q16. They isolate VCO Q1 from loading
effects which would degrade oscillator loaded Q and hence
noise performance. Transistor multiplier Q16 is tuned to pass
the second harmonic of the VCO output and hence serves as
a frequency doubler. Tank elements L1, C97-C99 and L12
form a resonant circuit and matching network to drive the
resistive splitter (R13, R17, R18, R96, R97, R99, R100).
The reference oscillator section provides a reference signal to the PLL section. The circuit design allows using either
an external or internal oscillator.
When using an external oscillator, the internal oscillator
is disabled by placing a logic low on the INT OSC line from
the T/R Shelf Interface Board. A high precision external
oscillator may then be connected to the module through the
external reference oscillator connector J4, EXT REF IN. J4
has a 50 ohm input impedance and is coupled to the base of
Q12. Buffer Q12 conditions the signal and applies it to the
synthesizer U6 via coupling capacitor C10.
The internal reference oscillator, Y1, provides a 12.8
MHz signal with a stability of ±1.0 ppm. It is enabled by
applying a logic high signal on the INT OSC line. This signal
turns on Q2, allowing it to conduct and apply +5 volts to pin
1 of the oscillator Y1. The 12.8 MHz output signal (Y1 pin
2) is then sent to the synthesizer via coupling capacitor C9.
The reference oscillator signal, either external or internal,
is also routed to Q13 via coupling capacitor C54. The output
taken from the emitter of Q13 is applied through C11 to the
input of Buffer Amplifier U4. The buffered signal is coupled
through C12 to a low pass filter network (C32,C33,C34, and
L7) and a resistive pad (R27, R28, and R31) for isolation.
The output from the resistive pad is then connected to J3,
REF OUT, making the reference oscillator signal available
for external use.
Within U6 are three programmable dividers which are
serially loaded using the CLOCK, DATA, and ENABLE inputs
(pins 11, 12, and 13 respectively). A serial data stream (DATA)
on pin 12 is shifted into the internal shift registers by low to
high transitions on the clock input (CLOCK) at pin 11. A logic
high (ENABLE) on pin 13 then transfers the program information from the shift registers to the divider latches. The serial
data determines the VCO frequency by setting the internal R,
A, and N dividers.
The 12.8 MHz reference oscillator signal OSCIN is internally routed to the "R" divider. The "R" divider divides down
the 12.8 MHz reference signal to a lower frequency, Fr, as
directed by the input data and applies the signal to the internal
analog phase and lock detectors.
The "A" and "N" dividers process the loop feedback signal
from the multiplier (by way of the dual modulus prescaler U5).
The output of the "N" divider, Fv, is a divided down version of
the multiplier output frequency. This signal is also applied to
the internal phase detector. The ramp and hold constants are
determined by C26, R37, C31, and R36.
The analog phase detector output voltage (PD OUT) is
proportional to the phase difference between Fv and Fr. This
output serves as the loop error signal. When operating on the
correct frequency, the inputs to the phase detector are identical
and the output voltage of the analog phase detector is constant.
If the compared frequencies (phases) differ, the analog phase
detector increases or decreases the DC output voltage (PD
OUT). This error signal voltage tunes the VCO to whatever
frequency is required to keep Fv and Fr locked (in phase).
The lock detector furnishes the Fault circuit in U13 with
the lock detect (LD) signal. When Fv and Fr are in phase, the
lock detector output sends a logic high on the LD line to the
fault circuit U13. If the VCO is not locked onto the correct
frequency, the resulting out-of-phase condition causes the output from the lock detector to be a logic low.
DIGITAL CONTROL
Logic control circuits (other than those inside the synthesizer IC - U6) consist of the following:
•
•
•
Digital Control Circuit (U10, U12, & U13)
Level Shifters
Fault Circuit
The Digital Control Circuits U10, U12, & U13 serve as an
interface between the controller and the synthesizer IC.
As an address decoder, U10 enables the input gates when
the A0, A1, and A2 input lines (pins 4, 3, and 2) receive the
correct address code from the controller. For the Receiver
synthesizer the enable address is 010 on A0, A1, and A2
respectively. After receiving the proper logic code, the input
gate U12 is enabled. This allows the ENABLE, CLOCK, and
serial DATA information to pass on to the synthesizer via the
level shifters.
The Level Shifters Q3, Q4, and Q5 convert the five volt
logic level to the eight volt logic level required by the synthesizer.
The Fault circuit, U13, monitors the lock detect signal from
the PLL synthesizer. Under normal (locked) condition, the PLL
sends a logic high signal to U13. U13 processes the signal and
provides a logic high output which saturates Q6. Saturating Q6
turns off the FAULT LED (CR1). U13 also sends a logic high
signal, FLAG 2, (U13.3 pin 8) to the controller indicating the
VCO’s frequency is correct.
LBI-38672J
When the VCO is not on the correct frequency, the synthesizer sends a logic low signal to U13. This causes U13 to cutoff
Q6 which turns on the FAULT LED (CR1). U13 also sends a
logic low signal to the controller, on the FLAG 2 line, indicating the VCO’s frequency is incorrect.
SERVICE NOTES
TEST AND ALIGNMENT
The following service information applies when aligning,
testing, or troubleshooting the RX Synthesizer:
•
VOLTAGE REGULATORS
Logic Levels:
Logic 1 = high = 4.5 to 5.5 Vdc
Logic 0 = Low = 0 to 0.5 Vdc
INITIALIZATION
Apply +12 Vdc to the test fixture.
Current Consumption
Voltage regulators U15 and U16 reduce the +13.8 VF line
to +5 Vdc and +8 Vdc respectively. The output from U15
(+5V_SYN) is used by both the synthesizer and logic circuitry
while the 8 Vdc output from U16 is used for the op-amps, level
shifters, and the discrete +8V OSC regulator circuit.
•
•
The discrete +8V OSC regulator circuit is a linear regulator
consisting of U9A, Q7, Q8, and associated circuitry. The error
amplifier U9A controls Q7 and pass element Q8. The +8V OSC
is used as the power source for the VCO circuit, where additional filtering is provided to keep noise to a minimum
Receiver Synthesizer Address = A0 A1 A2 = 010
Synthesizer data input stream is as follows:
14-bit "R" divider most significant bit (MSB) = R13
through "R" divider least significant (LSB) = R0
10-bit "N" divider MSB = N9 through "N" divider
LSB = N0
7-bit "A" divider MSB = A6 through "A" divider
LSB = A0
MAINTENANCE
Single high Control bit (last bit)
The following test equipment is required to test the Synthesizer Module:
1.
Latched When
Control Bit = 1
2.
Power Supply; 12.0 Vdc @ 500 mA
3.
Frequency Counter; 10 MHz - 250 MHz
4.
Power Meter; -20 dBm to +10 dBm
5.
Spectrum Analyzer, 0 - 1 GHz
Data in→
Last
Bit
A0
LSB
---
A6
N0
MSB MSB
--
N0
MSB
R0
LSB
---
R13
MSB
Shift
→Register
Out
Control Bit
•
•
Reference Oscillator
Adjust Y1 for an output frequency of 12.8 MHz ±2 Hz.
Measure the output power of the reference oscillator output
(J3).
Oscillator Alignment
DATA ENTRY FORMAT
Modulation Analyzer; HP 8901A, or equivalent
Verify the current is less than 250 mA. Total current
is the +13.8 VF current and +12 Vdc current combined.
Verify the output power is 1 dBm ±2 dBm.
Latched When Control Bit = 1
RECOMMENDED TEST EQUIPMENT
Measure the current through pins 15A, 15B, 15C, 16A,
16B, AND 16C.
Synthesizer lock is indicted by the extinguishing of the
front panel LED indicator and a logic high on the fault
FLAG 2 line (J1 pin 12C).
Ground the ENABLE TEST line (pin 22A). Apply +4
Vdc to the V_TUNE line (pin 26A). Measure the frequency
of the free running multiplied oscillator at the LO OUT port
(J2).
Adjust the trimmer capacitor C52 for 445 MHz
(G3), 470 MHz (G7), 420 MHz (G8), 490 MHz
(G10), 420 MHz (G12) or desired injection frequency ±100 kHz.
Synthesizer Loading
Unground the ENABLE TEST line (pin 22A). Load the
synthesizer IC for 445 MHz (G3) or 470 MHz (G7) or 420
MHz (G8), 490 MHz (G10), 420 MHz (G12) or desired
injection frequency.
Verify the lock indicator (CR1) is off or the FLAG
2 line is high.
Hum and Noise
Initialize the HP 8901A for 300 Hz - 3 kHz, 750 µsec
de-emphasis, average FM deviation, and 0.44 dB reference
for the deviation.
Verify the hum and noise (J2) is less than -55 dB.
Output Power and Harmonic Content
Adjust both slugs on FL1 for maximum output level
measured at J2.
Verify the output power (J2) at the fundamental frequency is:
2 dBm ±2 dB
Verify the harmonic content is less than -30 dBc.
Always verify synthesizer lock after each new data
loading.
LBI-38672J
TROUBLESHOOTING CHART
SYMPTOM
I. Loop Fails To Lock
II. Reference OSC. not present or
low power.
III. LO power low or
tuned out of band.
IV. LO signal not present.
(i.e. Q1 does not oscillate)
AREAS TO CHECK
1. Check for:
+8 Vdc at U16-3,
+5 Vdc at U15-3
+8 Vdc at Q8-C.
Bad Regulation circuitry.
Troubleshooting using
standard procedures.
2. Check for 12.8 MHz
reference at U6-2 and U6-3.
Typical Levels:
500 mVpp @U6-2
2.5 Vpp @U6-3.
Reference Osc. Module defective or supply
not present or low. Proceed to reference
oscillator section II.
3. Check for LO output @J2.
FLO ±5 MHz, 0 dBm nominal
LO tuning incorrect, or buffer amplifier bad.
Proceed to LO tuning and power section III.
4. Check Prescaler output @U5-4.
Typically: 2-4 MHz square wave
@1.25 Vpp.
If LO power is good, check for 3.2 Vdc
@U2-3. Replace U2, then U5 if necessary.
5. Check for CLOCK, DATA,
and ENABLE signals at U6
pins 11, 12 and 13 respectively.
(0, 8V logic levels)
Bad digital control circuitry.
Troubleshoot using standard procedures.
Ensure all programming signals are present
at J1. (CLOCK, DATA, ENABLE, A0, A1
and A2).
6. Check Ramp Signal @U6-15.
It should be 6.25 kHz nominal.
If reference oscillator and programming
signals are present for proper programming
information. Last resort - replace
Synthesizer IC U6.
1. Check for 4.3 Vdc supply at
junction of R5 and C41.
Bad supply switch Q2 or wrong
Control Signal Internal Osc.
Troubleshooting using standard procedures.
Replace Y1 as last resort.
2. Check 12.8 MHz signal @Q13-E.
Should be approx. 350 mVpp.
Bad buffer amplifier Q13.
Troubleshoot using standard procedures.
1. Check tuning with 6 Vdc applied
using test procedure. FLO ±5 MHz.
LO tuning incorrect. Retune following
test procedure.
2. Check DC bias at Buffer
Amplifiers U1, U2, & U3 pin 3
Typ. 3.2 Vdc.
Bad Buffer Amplifier. Replace bad part.
1. Check DC bias at Q1 drain.
(Typ. +8Vdc).
Replace Q1.
2. Check DC bias at Q1 source.
(Typ. +0.9 Vdc).
INDICATIONS
OUTLINE DIAGRAM
LBI-38672J
COMPONENT SIDE
(19D902664, Sh. 2, Rev. 4)
(19D902665, Layer 1, Rev. 1)
UHF RECEIVER SYNTHESIZER BOARD
19D902664G3 ,G7, G8, G10, G12
PARTS LIST
LBI-38672J
UHF RECEIVER SYNTHESIZER MODULE
19D902781G3, G7, G8, G10, G12
ISSUE 8
SYMBOL
PART NO.
DESCRIPTION
- - - - - - - - - MISCELLANEOUS - - - - - - - - -
SYMBOL
PART NO.
DESCRIPTION
C21
19A702052P3
Ceramic: 470 pF + or - 10%, 50 VDCW.
C22
19A702052P3
Ceramic: 470 pF + or - 10%, 50 VDCW.
C23
19A702052P5
Ceramic: 1000 pF + or -10%, 50 VDCW.
C26
19A702052P8
Ceramic: 3300 pF + or - 10%, 50 VDCW.
C27
19A705205P2
Tantalum: 1 uF, 16 VDCW; sim to Sprague 293D.
C28
19A705205P2
Tantalum: 1 uF, 16 VDCW; sim to Sprague 293D.
C29
19A705205P2
Tantalum: 1 uF, 16 VDCW; sim to Sprague 293D.
19D902509P4
COVER.
19D902555P1
Handle.
19A702381P506
Screw, thread forming: TORX, No. M3.5-.6 x 6.
19A702381P513
Screw, thread forming: TORX, No. M3.5 - 0.6 X
13.
C30
19A705205P2
Tantalum: 1 uF, 16 VDCW; sim to Sprague 293D.
10
19D902824P1
Casting.
C31
19A702052P1
Ceramic: 220 pF + or - 10%, 50 VDCW.
11
19A702381P508
Screw, thd. form: No. 3.5-0.6 x 8.
C32
19A702052P1
Ceramic: 220 pF + or - 10%, 50 VDCW.
38
19B802690P1
Grommet.
C33
19A702052P1
Ceramic: 220 pF + or - 10%, 50 VDCW.
C34
19A702236P43
Ceramic: 51 pF + or - 5%, 50 VDCW, temp coef
0 + - 30 PPM/°C.
C35
19A703684P1
Metallized Polyester: 0.47 uF + or -10%, 63 v.
UHF RECEIVER SYNTHESIZER BOARD
19D902664G3, G7, G8, G10, G12
- - - - - - - - - - CAPACITORS - - - - - - - - C1
19A702236P15
Ceramic: 3.9 pF + or -0.25 pF, 50 VDCW, temp coef
0 + or -30 PPM/°C. (Used in G7, G3, G10).
C1
19A702236P17
Ceramic: 4.7 pF + or -0.5 pF, 50 VDCW, temp coef
0 + or -60 PPM/°C. (Used in G8, G12).
C2
19A702236P6
Ceramic: 1 pF + or -0.25 pF, 50 VDCW, temp coef 0
+ or -30 PPM/°C. (Used in G3).
19A702052P3
Ceramic: 470 pF + or - 10%, 50 VDCW.
19A702061P61
Ceramic: 100 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM.
C78
19A702061P61
Ceramic: 100 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM.
C79
19A702061P61
C80
C81
19A702061P61
Ceramic: 100 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM. (Used in G40, G3, G7 and G8).
C82
and
C83
19A702052P14
Ceramic: 0.01 uF + or - 10%, 50 VDCW. (Used in
G80, G5, G40,
C84
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
C85
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
19A702236P28
Ceramic: 12 pF + or - 5%, 50 VDCW, temp coef 0
+ or -30 PPM. (Used in G80, G5, G40, G3, G7 and
G8).
C90
19A702052P14
Variable: 1.5 to 14 pF, 100 VDCW. (Used in G40,
G3 and G8).
Ceramic: 0.01 uF + or - 10%, 50 VDCW. (Used in
G40, G3, G7
Ceramic: 22 pF + or -5%, 50 VDCW, temp coef 0 +
or -30 PPM. (Used in G10).
C53
19A702052P26
Ceramic: 0.1uF + or - 10%, 50 VDCW.
C54
19A702052P14
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
C55
19A702052P26
Ceramic: 0.1uF + or - 10%, 50 VDCW.
C56
19A702052P26
Ceramic: 0.1uF + or - 10%, 50 VDCW
C57
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
C6
19A702236P32
Ceramic: 18 pF + or -5%, 50 VDCW, temp coef 0 +
or -30 PPM. (Used in G10).
C7
19A702052P14
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
C8
19A702052P26
Ceramic: 0.1uF + or - 10%, 50 VDCW.
C9
19A702052P14
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
C10
19A702052P14
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
C11
19A702052P14
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
C12
19A702052P14
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
C13
and
C14
19A702052P26
Ceramic: 0.1uF + or - 10%, 50 VDCW
C60
19A702052P14
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
C61
and
C62
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
C63
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
C64
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
C65
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
C66
C67
Ceramic: 1000 pF + or -10%, 50 VDCW.
*C16
19A702236P25
Ceramic: 10 pF + or -.5 pF, 50 VDCW, temp coef
0 + -30 PPM/°C. (Used in G3, G7 & G10).
C16
19A702236P28
Ceramic: 12 pF + or -.5 pF, 50 VDCW, temp coef
0 + -30 PPM/°C. (Used in G8).
C16
19A702236P31
Ceramic: 16 pF + or - 5%, 50 VDCW, temp coef
0 + -30 PPM/°C. (Used in G12).
C19
19A702052P3
Ceramic: 470 pF + or - 10%, 50 VDCW.
C20
19A702052P3
Ceramic: 470 pF + or - 10%, 50 VDCW.
* COMPONENTS, ADDED, DELETED OR CHANGED BY PRODUCTION CHANGES
19A702061P99
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
C68
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
C69
19A702061P99
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
C70
19A702061P61
Ceramic: 100 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM.
C71
19A702061P61
Ceramic: 100 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM.
C72
19A702061P61
Ceramic: 100 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM.
Coil, RF: sim to Paul Smith SK901-1.
- - - - - - - - - - - CRYSTALS - - - - - - - - -
Silicon, Hot Carrier: sim to MMB0201.
Electrolytic: 220 uF, -10+50%, 25 VDCW.
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
Coil, RF: 1.5 uH + or - 10%.
19C851001P4
DIODE ,SILICON.
19A134227P5
19A702052P14
19A700024P15
L10
19A149674P1
19A701225P3
C59
L5
19A705377P1
C52
Ceramic: 1000 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM/°C.
Coil, RF: 1.0 uH + or -10%.
D4
and
D5
C51
19A702061P99
Coil, fixed: .1uH; sim to Toko 380LB-1R0M.
19A700024P13
D3
Ceramic: 27 pF + or -5%, 50 VDCW, temp coef 0 +
or -30 PPM/°C. (Used in G7 , G8and G12).
C58
19A705470P25
L3
and
L4
Ceramic: 100 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM.
Ceramic: 100 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM.
Ceramic: 27 pF + or -5%, 50 VDCW, temp coef 0 +
or -30 PPM/°C. (Used in G3).
*L2
19A702061P61
19A702061P61
Ceramic: 12 pF + or - 5%, 50 VDCW, temp coef 0
+ or -30 PPM. (Used in G7, G8, G10, G12).
DESCRIPTION
- - - - - - - - - - INDUCTORS - - - - - - - - - -
Ceramic: 100 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM.
C89
Ceramic: 15 pF + or -5%, 50 VDCW, temp coef 0 +
or -30 PPM/°C. (Used in G3).
PART NO.
19B801351P14
Ceramic: 0.1uF + or - 10%, 50 VDCW.
Ceramic: 1.8 pF + or -0.25 pF, 50 VDCW, temp coef
0 + or -30 PPM.
SYMBOL
Y1
19A702052P26
Ceramic: 22 pF + or -5%, 50 VDCW, temp coef 0 +
or -30 PPM. (Used in G7 and G8, G12).
19A702052P5
C77
C50
19A702236P34
C45
Ceramic: 100 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM.
Ceramic: 33 pF + or -5%, 50 VDCW, temp coef 0 +
or -30 PPM/°C. (Used in G3).
*C6
C15
Ceramic: 0.1uF + or - 10%, 50 VDCW.
19A702061P61
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
19A702236P36
19A702236P36
Tantalum: 1 uF, 16 VDCW; sim to Sprague 293D.
19A702052P26
C76
19A702052P14
*C3
C6
19A705205P2
C44
Ceramic: 100 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM.
C88
19A702236P38
19A702236P28
C43
19A702061P61
Ceramic: 470 pF + or - 10%, 50 VDCW.
C3
*C5
Ceramic: 0.1uF + or - 10%, 50 VDCW
C75
Tantalum: 10 uF, 16 VDCW; sim to Sprague 293D.
Ceramic: 5.6 pF + or -0.5 pF, 50 VDCW, temp coef 0
+ or -60 PPM/°C. (Used in G12).
19A702236P30
19A702052P26
Ceramic: 100 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM.
19A702052P3
19A702236P19
C5
C38
19A702061P61
19A705205P6
C2
19A702236P9
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
C74
C49
Ceramic: 3.9 pF + or -0.25 pF, temp coef 0 + or
-30 PPM/°C. (Used in G8).
C4
Metal: 0.047 uF + or -10%, 50 VDCW.
19A702052P14
DESCRIPTION
Ceramic: 100 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM.
C46
19A702236P15
19A702236P34
19A703902P3
C37
PART NO.
19A702061P61
C86
and
C87
C2
C3
C36
SYMBOL
C73
C91
19A702061P61
Ceramic: 100 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM. (Used in G80, G5, G40, G3, G7 and
G8).
C92
thru
C96
19A702061P61
Ceramic: 100 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM. (Used in G40, G3, G7 and G8).
C97
19A702236P1
Ceramic: 0.5 pF + or -.l pF, 50 VDCW, temp coef
-30 PPM. (Used in G3, and G7).
Module: Crystal Oscillator, 12.8 MHz + or -1.0
PPM.
- - - - - - - - - - - DIODES - - - - - - - - - -
- - - - - - - - - - INDUCTORS - - - - - - - - - L1
19A705470P2
L7
19A705470P24
Coil, Fixed: 12 nH; sim to Toko 380NB-12nM.
Coil, Fixed: 0.82 uH; sim to Toko 380NB-R82M.
L11
and
L12
19A705470P2
Coil, Fixed: 12 nH; sim to Toko 380NB-12nM.
L13
and
L14
19A705470P1
Coil, Fixed: 10 nH; sim to Toko 380NB-10nM.
L15
19A705470P10
Coil, fixed: 56 nH; sim to Toko 380NB-56nM.
L16
and
L17
19A705470P15
Coil, fixed: .15uH; sim to Toko 380NB-R15M.
Q1
19A702524P2
N-Type, field effect; sim to MMBFU310.
Q2
19A700076P2
Silicon, NPN: sim to MMBT3904, low profile.
Q3
thru
Q5
19A700076P2
Silicon, NPN: sim to MMBT3904, low profile.
Q6
19A700076P2
Silicon, NPN: sim to MMBT3904, low profile.
Q7
19A700076P2
Silicon, NPN: sim to MMBT3904, low profile.
- - - - - - - - - - TRANSISTORS - - - - - - - - -
C97
19A702236P11
Ceramic: 2.7 pF + or -.25 (Used in G8, G12).
Q8
19A700059P2
Silicon, PNP: sim to MMBT3906, low profile.
C98
and
C99
19A702236P30
Ceramic: 15 pF + or -5%, 50 VDCW, temp coef 0 +
or -30 PPM/°C. (Used in G3, and G7).
Q9
thru
Q11
19A700076P2
Silicon, NPN: sim to MMBT3904, low profile.
C98
and
C99
19A702236P31
Ceramic: 16 pF + or -5%, 50 VDCW, temp coef 0 +
or -30 PPM/°C. (Used in G8, G12).
Q12
and
Q13
19A700076P2
Silicon, NPN: sim to MMBT3904, low profile.
C98
and
C99
19A702236P28
Ceramic: 12 pF + or -5%, 50 VDCW, temp coef 0 +
or -30 PPM/°C. (Used in G10).
Q14
thru
Q16
19A704708P2
Silicon, NPN: sim to NEC 2SC3356.
C100
19A702236P25
Ceramic: 10 pF + or -.5 pF, 50 VDCW, temp coef
-30 PPM/°C.
C101
19A702236P10
Ceramic: 2.2 pF + or -2.5 pF, 50 VDCW, temp
or -30 PPM/°C.
- - - - - - - - - - RESISTORS - - - - - - - - - R1
19B800607P680
Metal film: 68 ohms + or -5%, 1/8 w.
R2
19B800607P100
Metal film: 10 ohms + or -5%, 1/8 w. (Used in
G40, G3, G7
Optoelectic: Red LED; sim to HP HLMP-1301-010.
R3
19B800607P100
Metal film: 10 ohms + or -5%, 1/8 w.
- - - - - - - - - - - FILTERS - - - - - - - - - -
R4
19B800607P100
Metal film: 10 ohms + or -5%, 1/8 w.
R5
thru
R9
19B800607P100
Metal film: 10 ohms + or -5%, 1/8 w.
R10
19B800607P1
Metal film: 0 ohms.
R11
19B800607P183
Metal film: 18K ohms + or -5%, 1/8 w.
FILTER ,HEL RF: sim to TOKO
SHW-39545A-415 (Used in G12).
R12
19B800607P271
Metal film: 270 ohms + or -5%, 1/8 w.
- - - - - - - - - - - JACKS - - - - - - - - - - -
R13
19B800607P510
Metal film: 51 ohms + or -5%, 1/8 w.
Connector, DIN: 96 male contacts, right angle
to AMP 650887-1.
R14
19B800607P271
Metal film: 270 ohms + or -5%, 1/8 w.
R15
19B800607P180
Metal film: 18 ohms + or -5%, 1/8 w.
R16
19B800607P392
Metal film: 3.9K ohms + or -5%, 1/8 w.
- - - - - - - - - - - DIODES - - - - - - - - - CR1
19A703595P10
FL1
344A3802P4
FILTER ,HEL RF (Used in G8).
FL1
344A3802P2
FILTER ,HEL RF (Used in G3).
FL1
344A3802P3
FILTER, RF: 475 MHz SIM TO TOKO
SHW-44545A-475 (Used in G7, G10)
FL1
J1
J2
thru
J4
344A3802P5
19B801587P7
19A115938P24
Connector, receptacle.
PARTS LIST & PRODUCTION CHANGES
SYMBOL
PART NO.
DESCRIPTION
SYMBOL
PART NO.
DESCRIPTION
R17
19B800607P120
Metal film: 12 ohms + or -5%, 1/8 w.
R71
R18
19B800607P180
Metal film: 18 ohms + or -5%, 1/8 w.
R72
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
R19
19B800607P100
Metal film: 10 ohms + or -5%, 1/8 w.
R73
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
R74
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
R75
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
R76
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
R77
19B800607P101
Metal film: 100 ohms + or -5%, 1/8 w.
R78
19B800607P101
Metal film: 100 ohms + or -5%, 1/8 w.
R79
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
R80
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
R20
R21
19B800607P103
19B800607P472
Metal film: 10K ohms + or -5%, 1/8 w.
Metal film: 4.7K ohms + or -5%, 1/8 w.
R22
19B800607P271
Metal film: 270 ohms + or -5%, 1/8 w.
R23
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
R24
19B800607P562
Metal film: 5.6K ohms + or -5%, 1/8 w.
R27
19B800607P181
Metal film: 180 ohms + or -5%, 1/8 w.
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
R28
19B800607P181
Metal film: 180 ohms + or -5%, 1/8 w.
R29
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
R81
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
R30
19B800607P560
Metal film: 56 ohms + or -5%, 1/8 w.
(Used in G3, G7, G8, G12).
R82
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
Metal film: 68 ohms + or -5%, 1/8 w. (Used in G10).
R83
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
R30
19B800607P680
R31
19B800607P270
Metal film: 27 ohms + or -5%, 1/8 w.
R84
R32
19B800607P472
Metal film: 4.7K ohms + or -5%, 1/8 w.
R85
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
Metal film: 1K ohms + or -5%, 1/8 w.
R33
19B800607P472
Metal film: 4.7K ohms + or -5%, 1/8 w.
R86
R34
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
R87
19B800607P102
Metal film: 10K ohms + or -5%, 1/8 w.
R88
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
R35
19B800607P103
R36
19B800607P393
Metal film: 39K ohms + or -5%, 1/8 w.
R89
R37
19B800607P104
Metal film: 100K ohms + or -5%, 1/8 w.
R90
19B800607P222
Metal film: 2.2K ohms + or -5%, 1/8 w.
19B800607P101
Metal film: 100 ohms + or -5%, 1/8 w.
R38
19B800607P682
Metal film: 6.8K ohms + or -5%, 1/8 w.
R91
R39
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
19B800607P101
Metal film: 100 ohms + or -5%, 1/8 w.
R40
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
R92
thru
R94
R41
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
R95
19B800607P101
Metal film: 100 ohms + or -5%, 1/8 w.
19B800607P221
Metal film: 220 ohms + or -5%, 1/8 w.
R42
19B800607P823
Metal film: 82K ohms + or -5%, 1/8 w.
R96
R43
19B800607P333
Metal film: 33K ohms + or -5%, 1/8 w.
R97
19B800607P220
Metal film: 22 ohms + or -5%, 1/8 w.
R44
19B800607P274
Metal film: 270K ohms + or -5%, 1/8 w.
R98
19B800607P180
Metal film: 18 ohms + or -5%, 1/8 w.
Metal film: 4.7K ohms + or -5%, 1/8 w.
R99
19B800607P120
Metal film: 12 ohms + or -5%, 1/8 w.
19B800607P330
Metal film: 33 ohms + or -5%, 1/8 w.
R45
19B800607P472
R46
19B800607P181
Metal film: 180 ohms + or -5%, 1/8 w.
R100
R47
19B800607P271
Metal film: 270 ohms + or -5%, 1/8 w.
R101
and
R102
19B800607P121
Metal film: 120 ohms + or -5%, 1/8 w.
(Used in G3, G7, G8, G12).
19B800607P101
Metal film: 100 ohms + or -5%, 1/8 w. (Used in G10).
R48
19B800607P181
Metal film: 180 ohms + or -5%, 1/8 w.
R49
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
R50
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
R101
and
R102
R51
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
R103
19B800607P390
R52
19B800607P473
Metal film: 47K ohms + or -5%, 1/8 w.
Metal film: 47K ohms + or -5%, 1/8 w.
U2
19A705927P1
Silicon, bipolar: sim to Avantek MSA-0611.
Metal film: 47K ohms + or -5%, 1/8 w.
U3
19A705927P1
Silicon, bipolar: sim to Avantek MSA-0611.
Metal film: 2.2K ohms + or -5%, 1/8 w.
U4
19A705927P1
Silicon, bipolar: sim to Avantek MSA-0611.
19A149944P201
R53
R54
R55
19B800607P473
19B800607P473
19B800607P222
19B800607P473
Metal film: 47K ohms + or -5%, 1/8 w.
19B800607P681
Metal film: 680 ohms + or -5%, 1/8 w.
U6
19B800902P5
Metal film: 2.2K ohms + or -5%, 1/8 w.
U8
19A702293P3
Linear: Dual Op Amp; sim to LM358D.
Metal film: 1K ohms + or -5%, 1/8 w.
U9
19A702293P3
Linear: Dual Op Amp; sim to LM358D.
U10
19A703471P320
Digital: 3-Line To 8-Line Decoder; sim to
74HC138.
U12
and
U13
19A703483P302
Digital: Quad 2-Input NAND Gate; sim to 74HC00.
U14
19A702705P4
Digital: Quad Analog Switch/Multiplexer; sim to
4066BM.
U15
19A704971P8
Voltage Regulator, Positive: sim to Motorola
MC78M05CDT.
U16
19A704971P10
Voltage Regulator, 8V: sim to MC78M08CDT
R61
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
R62
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
R63
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
R64
19B800607P510
Metal film: 51 ohms + or -5%, 1/8 w.
R65
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
R66
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
R67
19B800607P473
Metal film: 47K ohms + or -5%, 1/8 w.
R68
19B800607P473
Metal film: 47K ohms + or -5%, 1/8 w.
R69
19B800607P333
Metal film: 33K ohms + or -5%, 1/8 w.
R70
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
The UHF Receiver Synthesizer module was modified to
meet ETSI requirements.
Items 3 and 7 were changed and item 23 was added.
Item 3 was: 19D902509P3.
Item 7 was: 19A702381P513.
C16 was 6.8 pF (19A702236P21).
C2 was deleted (19A702236P10).
REV. A - UHF RECEIVER SYNTHESIZER BOARD 19D902664G7
REV. B - UHF RECEIVER SYNTHESIZER BOARD 19D902664G3
To improve operation.
C3 was 22 pF (19A702236P34).
C5 was 10 pF (19A702236P25).
C6 was 18 pF (19A702236P32).
C16 was 8.2 pF (19A702236P23).
R4 was 47 ohms (19B800607P470).
REV. B - UHF RECEIVER SYNTHESIZER BOARD 19D902664G7
REV. C - UHF RECEIVER SYNTHESIZER BOARD 19D902664G3
To support 12.5kHz operation, changed Y1.
Was 1.5PPM crystal (19B801351P12).
REV. C - UHF RECEIVER SYNTHESIZER BOARD 19D902664G7
To reduce spurious radiation to meet ETSI specs.
L12 and R18 interchanged. L2 was 1uH (19A700024P13).
REV. D - UHF RECEIVER SYNTHESIZER BOARD 19D902664G3 & G7
To prevent regulator from drop out at low voltages.
R10 was 10 ohms (19B800607P100).
- - - - - - - - INTEGRATED CIRCUITS - - - - - - -
R58
19B800607P102
REV. A - UHF RECEIVER SYNTHESIZER BOARD 19D902664G3
Metal film: 39 ohms + or -5%, 1/8 w.
R57
R60
Changes in the equipment to improve performance or to simplify circuits are
identified by a "Revision Letter" which is stamped after the model number of
the unit. The revision stamped on the unit includes all previous revisions. Refer
to the Parts List for the descriptions of parts affected by these revisions.
To correct timing range added C2 (and changed C16).
C16 was 8.2 pF (19A702236P23).
Dual Modulus Prescaler: sim to Motorola
MC12022A.
Synthesizer, custom: CMOS, serial input.
19B800607P222
PRODUCTION CHANGES
REV. E - UHF RECEIVER SYNTHESIZER BOARD 19D902664G3
U5
R59
LBI-38672J
IC DATA
LBI-38672J
U2 thru U4
19A705927P1
Silicon Bipolar IC
U5
19A149944P201
Modulus Prescaler
U6
19B80090P5
Synthesizer
U8 & U9
19A702293P3
Dual Operational Amplifier
U10
19A703471P120
Decoder/Demux
U12 & U13
19A703483P302
Logic Gate/Inverter
U14
19A702705P4
Quad Analog Switch
IC DATA
U15
19A704971P8
+5V Regulator
LBI-38672J
U16
19A704971P10
+8V Regulator
Y1
19B801351P12
Crystal Oscillator
LBI-38672J
RECEIVER SYNTHESIZER MODULE
19D902781G3, G7, G8, G10, G12
(19D902781, Sh. 2, Rev. 5)
10
ASSEMBLY DIAGRAM
SCHEMATIC DIAGRAM
LBI-38672J
RECEIVER SYNTHESIZER MODULE
19D902664G3, G7, G8, G10, G12
(19D904091, Sh. 1, Rev. 9A)
11
LBI-38672J
RECEIVER SYNTHESIZER MODULE
19D902664G3 , G7, G8, G10, G12
(19D904091, Sh. 2, Rev. 9A)
12
SCHEMATIC DIAGRAM
SCHEMATIC DIAGRAM
LBI-38672J
RECEIVER SYNTHESIZER MODULE
19D902664G3, G7, G8, G10, G12
(19D904091, Sh. 3, Rev. 9A)
13
LBI-38673F
MAINTENANCE MANUAL FOR
RECEIVER FRONT END MODULE
19D902782G3, G4, & G7
TABLE OF CONTENTS
Page
DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Front Cover
SPECIFICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CIRCUIT ANALYSIS
PRESELECTOR FILTER . .
PREAMPLIFIER . . . . . . .
IMAGE REJECTION FILTER
INJECTION AMPLIFIER . .
INJECTION FILTER . . . . .
DOUBLE BALANCE MIXER
FAULT DETECTION . . . . .
MAINTENANCE
TEST PROCEDURE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ALIGNMENT PROCEDURE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TROUBLESHOOTING PROCEDURE . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BLOCK DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TABLE 2 - RETUNING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PARTS LIST . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PRODUCTION CHANGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
OUTLINE DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ASSEMBLY DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SCHEMATIC DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DESCRIPTION
The Receiver Front End (RXFE) Module amplifies
and converts the Rf signal to the first IF signal of 21.4
MHz. This is a down conversion process using low side
(G3, G4) or high side (G7) injection. The RXFE module
is powered by a regulated 12 volts. The RXFE printed
wiring board contains the following functional circuits:
•
•
Preselector Filter
•
•
•
•
•
Image Rejection Filter
Injection Amplifier
Injection Filter
Double Balanced Mixer
Fault Detector
All but the Fault Detector circuit in the RXFE module have 50 ohm impedance terminations.
Preamplifier
Ericsson Inc.
Private Radio Systems
Mountain View Road
Lynchburg, Virginia 24502
1-800-592-7711 (Outside USA, 804-592-7711)
Printed in U.S.A.
LBI-38673F
Table 1 - General Specifications
ITEM
SPECIFICATION
FREQUENCY RANGE
450.0 MHz - 470.0 MHz (G3, G4)
425.0 MHz - 470.0 MHz (G7)
IF FREQUENCY
21.4 MHz
3 dB BANDWIDTH
>3 MHz
IMPEDANCE
50 ohms at RF, LO, and IF Ports
CONVERSION LOSS
-2 dB ±1 dB
NOISE FIGURE (NF)
<7.5 dB
THIRD ORDER INTERCEPT POINT
>+20 dBm (G3, G4)
>+15 dBm (G7)
IMAGE REJECTION
>100dB
INJECTION POWER
+2 dBm ±2 dB
TEMPERATURE RANGE
-30°C TO +60°C
SUPPLY VOLTAGE
12.0 Vdc
SUPPLY CURRENT
290 mA ±20 mA typical
230 mA ±20 mA typical (G3)
CIRCUIT ANALYSIS
PRESELECTOR FILTER
The received RF signal (J2) is routed through the Preselector Filter. This filter provides front end selectivity and
attenuates the potential spurious signals of first conversion.
Typically, the filter has an insertion loss is 3 dB and an operational bandwidth of 2 MHz. The filter is primarily a five-pole
helical bandpass filter (L1 thru L5) and is tunable in the band
split MHz range.
tored by the Fault Detector circuit via R17. Capacitors C20 and
C21 prevent the RF component from entering the fault circuit.
The output signal is coupled to the Image Rejection Filter via
an impedance matching network consisting of C4, L8, and
resistors R5 and R6.
IMAGE REJECTION FILTER
Following the Preamplifier is the Image Rejection Filter.
The Image Rejection Filter is a fixed tuned helical bandpass
filter and can meet the desired image rejection of the frequency
band.
PREAMPLIFIER
INJECTION AMPLIFIER
The output from the Preselector is coupled through an
impedance matching network consisting of L6, C2, and DC
blocking capacitor C1 to the base of Preamplifier Q1. Q1 is a
broadband common emitter amplifier. The Preamplifier stage
is supplied by the regulated +12 Vdc line (VCC1) and draws
about 70 mA through R4. It has a low noise figure and high
Third Order Intercept point. Transistor Q2 provides Q1 with a
constant voltage and current source. The bias on Q1 is moni-
The local oscillator input (J3) from the Receiver Synthesizer is coupled through an impedance matching network (C5
and L9) to the base of the Injection Amplifier Q3. Q3 and Q8
are common emitter amplifiers. The output from Q3 is coupled
through an impedance matching network (C6, C7, and L11) to
the base of Q8. The Injection Amplifier, consisting of Q3, Q8,
and associated circuitry, is capable of amplifying the injection
signal from 0 dBm to +25 dBm in the 428 to 449 MHz range
Figure 1 - Block Diagram
or to +18 dBm in the 446-472 MHz range. The amplifier is
powered by the regulated +12 Vdc line (VCC1). Transistors
Q4 and Q7 provide Q3 and Q8 with a constant voltage and
current source. The bias on Q3 and Q8 is monitored by the
Fault Detector circuit via R21 and R31, respectively. Capacitors C22, C23 and C26 prevent the RF component from
entering the fault circuit. The output signal is coupled to the
Injection Filter via an impedance matching network consisting of C8, L13, and resistors R15 and R16.
INJECTION FILTER
Following the Injection Amplifier is the Injection Filter
consisting of C9 through C19, L14 through L20, and R30.
Configured as a bandpass filter, the Injection Filter has a
bandwidth of 428 to 450 MHz (G3, G4) or 446 to 472 MHz
(G7) and is used to attenuate the harmonics of the Injection
Amplifier. The filter also has an insertion loss of about 2 dB.
sion IF frequency. The mixer uses low side (G3, G4) or high
side (G7) injection driven by a local oscillator signal of +20
(G3, G4) or +15 (G7) dBm. The mixer conversion loss is
typically about 6.5 dB. The IF output signal is then routed to
the output connector (J4).
FAULT DETECTOR
The Fault Detector circuit monitors the operation of
preamplifier and injection amplifier devices. Operational
amplifiers U1.1 and U1.2 compare the bias on the Preamplifier Q1 to preset levels, while U1.3 and U1.4 compare the
bias levels on Injection Amplifiers Q3 and Q8.
When the bias for Q1, Q3, and Q8 is within the preset
window limits, the output from the comparators is a high
level. This causes Q5 to conduct, turning off Q6 and the fault
indicator, CR2. A high level signal is also sent to the Controller on the FLAG 0 line.
DOUBLE BALANCE MIXER
The Double Balance Mixer (DBM) is a broadband
mixer. It converts an RF signal to the 21.4 MHz first conver-
Copyright© July 1992, Ericsson GE Mobile Communications, Inc.
LBI-38673F
ten degrees). If an RF Voltmeter is used, connect a
Low Pass Filter (LPF)to the IF OUT (J4) to attenuate
high frequency components. The corner of the LPF
should be set for 40 MHz.
If the biasing for the amplifiers is not within the proper
operating range, the fault detector circuit will pull the FLAG
0 line low. This turns off Q5 causing Q6 to conduct. Q6 now
provides a ground path for CR2, turning on the fault indicator.
5.
Repeat Test Procedure steps to verify conversion
gain and current drain.
TROUBLESHOOTING GUIDE
SYMPTOM
AREAS TO CHECK
READING (TYP.)
LOW CONVERSION GAIN
Check Vcc
12 V
Preselector Loss
3.5 dB
Preamplifier Gain
11 dB
Image Rej. Filter Loss
2 dB
1st Mixer Conversion Loss
6.5 dB
1 L.O. Level (@ mixer L.O.
port)
+22 ±2 dBm (G3, G4)
+14 ±2 dBm (G7)
Check Vc of Q1
10 V
Check Vc of Q3 and Q8
10 V
IF FREQUENCY OFF
Check L.O. FREQUENCY
L.O. frequency = RF frequency - 21.4 MHz (G3,G4)
+ 21.4 MHz (G7)
LOW L.O. POWER*
Injection Amplifier Gain
23 ±2 dB (G3, G4)
18 ±2 dB (G7)
Injection Filter Loss
2 dB
MAINTENANCE
For Major Retuning
TEST PROCEDURE
The RXFE module has to be tested for Noise Figure,
Gain, Third Order Intercept Point, Isolation etc.. With proper
current drawing of devices, Bandwidth and Conversion Gain
the RXFE module will meet its specifications. The following
are test procedures will verify proper Conversion Gain and
current drain:
1.
Supply 12 Vdc to pin 15A, B, C. (1C is ground.)
2.
Inject the desired RF signal into RF IN at a level of
-10 dBm.
3.
Inject the desired local oscillator signal into LO IN
at a level of 0 dBm [LO frequency = RF frequency 21.4 MHz (G3, G4) + 21.4 MHz (G7)].
4.
Measure the IF OUT power at 21.4 MHz, the ratio of
RF IN to IF OUT is -2 dB ±1 dB.
5.
Measure the current drawn by the RXFE module.
Typical current drain is 290 mA.
The best way to do a major retuning of the RXFE is with
swept frequency tuning. The swept frequency tuning can be
done using a Spectrum Analyzer and Tracking Generator.
With proper Injection power and current drain, the frequency
response of the Preselector Filter can be seen by viewing the
RF to IF port feedthrough on the spectrum analyzer. This
feedthrough is typically 35 dB down from the input level at
the RF port. Use the following procedure for swept frequency tuning:
1.
Supply 12 Vdc to pin 15A, B, C. (1C is ground.)
2.
Inject the Tracking generator output at 0 dBm into
the RF IN connector, (J2).
3.
4.
Inject local oscillator power at 0 dBm into the LO IN
connector, (J3) [LO frequency = RF frequency - 21.4
MHz (G3, G4) + 21.4 MHz (G7)].
Preset the height of slugs with respect to the top of
five-pole cavity as follows (Table 2):
Table 2
ALIGNMENT PROCEDURE
Alignment for the Receiver Front End module consists
of tuning the five-pole Preselector Filter only. Normally, the
RXFE should only need the fine-tuning procedures. For a
major receiver frequency change, the RXFE needs to be
adjusted using the major-retuning procedures.
For Fine-Tuning
L1
L2
L3
L4
L5
450
15/64
16/64
17/64
17/64
16/64
454
16/64
17/64
17/64
18/64
15/64
458
16/64
19/64
19/64
19/64
17/64
1.
Supply 12 Vdc to pin 15A, B, C. (1C is ground.)
462
18/64
19/64
20/64
20/64
18/64
2.
Inject the desired RF signal into RF IN (J2) at a level
of -10 dBm.
466
21/64
22/64
23/64
21/64
20/64
3.
Inject the desired local oscillator signal into LO IN
(J3) at a level of 0 dBm [LO frequency = RF frequency - 21.4 MHz (G3, G4) + 21.4 MHz (G7)].
470
22/64
24/64
24/64
23/64
22/64
4.
HEIGHT (in inches)
Frequency
(MHz)
Detect IF signal at 21.4 MHz. Slightly adjust L1 to
L5 to get maximum power (don’t adjust more than
5.
LED INDICATOR ON
Center the spectrum analyzer at the desired frequency
and set the reference at about -30 dBm. Adjust L1 to
L5 for best possible response.
NOTE: For troubleshooting the gain or loss, the RXFE needs to be under the normal operating condition:
•
•
•
•
•
12 Vdc supply.
Inject L.O. power at a level of 0 dBm into LO IN (J3), [LO freq. = RF freq. - 21.4 MHz (G3, G4)
+ 21.4 MHz (G7).
Inject the desired RF signal at a level of -10 dBm into RF IN (J2).
Terminate the IF OUT (J4) with a good 50 ohm impedance.
Use a Spectrum Analyzer and 50 ohm probe (with good RF grounding) to probe at the input and output of
each stage to check its gain or loss (see schematic diagram).
PARTS LIST
RECEIVER FRONT END MODULE
19D902782G3 (450-470 MHz)
19D902782G4 (450-470 MHz ETSI)
19D902782G7 (425-450 MHz)
ISSUE 5
SYMBOL
PART NUMBER
DESCRIPTION
SYMBOL
C13
C14
C14
19A702061P13
19A702061P8
19A702061P7
DESCRIPTION
SYMBOL
PART NUMBER
— — — — — JACKS
Ceramic: 10 pF,±5%, 50VDCW,
temp coef 0±30 PPM.
Ceramic: 3.9 pF ± 0.5 pF, 50 VDCW,
temp coef 0 ± 120 PPM.
(Used in G3, G4).
Ceramic: 3.3 pF, 0.5 pF, 50VDCW,
temp coef 0±120 PPM. (Used in G7).
DESCRIPTION
J1
J2
thru
J4
19B801587P7
19A115938P24
————
19A700021P105
Coil, RF ceramic: 22 nH. (Used in G4).
Connector, receptacle.
L22
19A705470P6
Coil, fixed: 27 nH; sim to Toko
380NB-27nM. (Used in G7).
L23
19A700021P13
Coil, RF ceramic: 470 nH. (Used in G4).
L23
19A705470P21
Coil, fixed: 0.47 uH; sim to Toko
380NB-R47M. (Used in G7).
*L24
19A700000P122
Coil, fixed: 8.2 uH ± 10%; sim to
Jeffers 22-8.2-10.
19D902534P1
Cover, RF.
C15
19A702061P11
19A702381P506
Screw, thread forming: TORX, No.
M3.5-.6 x 6.
Ceramic: 6.8 pF ± 0.5 pF, 50 VDCW,
temp coef 0 ± 60 PPM. (Used in G3, G4).
L1
19C850817P10RF
C15
19A702061P69
19A702381P513
Screw, thread forming: TORX, No.
M3.5-0.6 X 13.
Ceramic: 220 pF,±5%, 50VDCW,
temp coef 0±30 PPM. (Used in G7).
L1
19C850817P25
Coil. (Used in G7).
C16
19A702061P8
Ceramic: 3.9 pF ± 0.5 pF, 50 VDCW,
temp coef 0 ± 120 PPM.
(Used in G3, G4).
L2
thru
L4
19C850817P9
RF Coil: sim to Paul Smith SK853-1.
(Used in G3, G4).
L2
thru
L4
19C850817P5
C16
19A702061P7
Ceramic: 3.3 pF, 0.5 pF, 50VDCW,
temp coef 0±120 PPM. (Used in G7).
C17
19A702061P9
Ceramic: 4.7 pF ± 0.5 pF, 50 VDCW,
temp coef 0 ± 60 PPM. (Used in G3, G4).
C17
— — — — CAPACITORS — — —
C1
19A702052P14
Ceramic: 0.01 µF ± 10%, 50 VDCW.
C2
19A702061P17
Ceramic: 12 pF ±5%, 50 VDCW, temp
coef 0 ± 30 PPM.
C3
19A702052P14
Ceramic: 0.01 µF ± 10%, 50 VDCW.
C4
19A702061P12
Ceramic: 8.2 pF ± 0.5 pF, 50 VDCW,
temp coef 0 ± 60 PPM. (Used in G3, G4).
C4
19A702061P61
Ceramic: 100pF,±5%, 50VDCW,
temp coef 0±30 PPM/°C. (Used in G7).
C5
19A702061P17
Ceramic: 12 pF ±5%, 50 VDCW, temp
coef 0 ± 30 PPM.
C6
19A702061P57
Ceramic: 82 pF ±5%, 50 VDCW, temp
coef 0 ± 30 PPM. (Used in G3, G4).
C6
C7
C7
C8
C8
C9
C9
19A702061P63
19A702061P17
19A702061P10
19A702061P29
19A702061P63
19A702061P13
19A702061P17
Ceramic: 120 pf,±5%, 50VDCW,
temp coef 0±30 PPM/°C. (Used in G7).
Ceramic: 12 pF ±5%, 50 VDCW, temp
coef 0 ± 30 PPM. (Used in G3, G4).
Ceramic: 5.6 pF, 0.5 pF, 50VDCW,
temp coef 0±60 PPM/°C. (Used in G7).
C12
and
C13
C12
19A702061P13
19A702061P21
Coil, Fixed: 15 nH; sim to Toko
380NB-15nM.
19A700059P2
19A705470P16
Silicon, PNP: sim to MMBT3906, low
profile.
Ceramic: 3.3 pF, 0.5 pF, 50VDCW,
temp coef 0±30 PPM. (Used in G7).
Coil, Fixed: 0.18 µH; sim to Toko
380NB-R18M.
Q7
L7
344A3058P1
Silicon, NPN.
19A705470P7
Ceramic: 47 pF ±5%, 50 VDCW, temp
coef 0 ±30 PPM.
Coil, fixed: 33 nH ±20%; sim to Toko
380NB-33nM.
Q8
L8
L9
19A705470P5
Coil, Fixed: 22 nH; sim to Toko
380NB-22nM. (Used in G3, G4).
L9
19A705470P3
Coil, fixed: 15 nH; sim to Toko
380NB-15nM. (Used in G7).
Ceramic: 0.01 µF ± 10%, 50 VDCW.
19A702061P89
Ceramic: 1500 pF, ±5%, 50VDCW,
temp coef 0±120 PPM.
(Used in G4 & G7).
*C29
and
*C30
19A705205P26
Tantalum: 3.3 µF ±20%, 16VDCW,
(Used in G3).
*C31
and
*C32
19A705205P15
Tantalum: 33 µF ±20%, 16VDCW,
(Used in G3).
Ceramic: 39 pF, ±5%, 50VDCW,
temp coef 0±30 PPM. (Used in G4 & G7).
19A705205P15
CR1
344A3062P1
Diode, Schotty (part of 19D902782G3).
CR2
19A703595P10
Diode, Optoelectric: Red; sim to HP
HLMP-1301-010. (Used in G3).
Ceramic: 15 pF,±5%, 50VDCW,
temp coef 0±30 PPM. (Used in G7).
Ceramic: 33 pF,±5%, 50VDCW,
temp coef 0±30 PPM. (Used in G4 & G7).
Tantalum: 3.3 µF ±20%, 16VDCW,
(Used in G4, G7).
Tantalum: 33 µF ±20%, 16VDCW,
(Used in G4, G7).
————
————
FL1
19A705458P5
Silicon, PNP: sim to MMBT3906, low
profile.
19A705470P3
C29
and
C30
19A705458P1
Silicon NPN.
19A700059P2
L6
Ceramic: 3.9 pF ± 0.5 pF, 50 VDCW,
temp coef 0 ± 120 PPM.
(Used in G3, G4).
19A702052P14
FL1
19A704708P3
Silicon, NPN: sim to MMBT3904, low
profile. (Used in G3).
*C39
and
*C40
Ceramic: 10 pF ±5%, 50 VDCW, temp
coef 0 ± 30 PPM. (Used in G3, G4).
Q3
19A700076P2
C20
thru
C28
Ceramic: 18 pF,±5%, 50VDCW,
temp coef 0±30 PPM. (Used in G7).
Silicon, PNP: sim to MMBT3906, low
profile.
Q5
and
Q6
19A705205P26
Ceramic: 8.2 pF ± 0.5 pF, 50 VDCW,
temp coef 0 ± 60 PPM. (Used in G3, G4).
Silicon, NPN.
19A700059P2
Coil. (Used in G7).
*C37
and
*C38
Ceramic: 15 pF,±5%, 50VDCW,
temp coef 0±30 PPM. (Used in G7).
344A3058P1
Q2
19C850817P25
Ceramic: 10 pF ±5%, 50 VDCW, temp
coef 0 ± 30 PPM. (Used in G3, G4).
19A702061P21
Q1
L5
Ceramic: 220 pF,±5%, 50VDCW,
temp coef 0±30 PPM. (Used in G7).
Ceramic: 120 pF,±5%, 50VDCW,
temp coef 0±30 PPM. (Used in G7).
Ceramic: 12 pF, ±5%, 50VDCW,
temp coef 0±30 PPM. (Used in G7).
Coil. (Used in G7).
— — — — TRANSISTORS— — — —
RF Coil: sim to Paul Smith SK853-1.
(Used in G3, G4).
19A702061P37
C10
19A702061P25
19A702061P45
Coil: sim to Paul Smith SK853-1.
(Used in G3, G4).
19C850817P10
C34
thru
C36
Ceramic: 22 pF ±5%, 50 VDCW, temp
coef 0 ± 30 PPM. (Used in G3, G4).
Ceramic: 6.8 pF ± 0.5 pF, 50 VDCW,
temp coef 0 ± 60 PPM. (Used in G3, G4).
C11
C19
19A702061P7
———
L5
19A702236P40
19A702061P11
19A702061P12
C18
19A702061P8
— — — — INDUCTORS
Q4
C31
thru
C33
C10
C11
C18
19A702061P69
Coil, Fixed: 0.18 µH; sim to Toko
380NB-R18M.
L22
RECEIVER FRONT END BOARD
19D902490G3 (450-470 MHz)
19D902490G4 (450-470 MHz ETSI)
19D902490G7 (425-450 MHz)
DESCRIPTION
19A705470P16
Handle.
Screw, thd. form: No. 3.5-0.6 x 8.
PART NUMBER
L21
19D902555P1
19A702381P508
SYMBOL
Connector, DIN: 96 male contacts, right
angle mounting; sim to AMP 650887-1.
11
PART NUMBER
LBI-38673F
DIODES — — — — —
L10
19A705470P16
Coil, Fixed: 0.18 µH; sim to Toko
380NB-R18M.
L11
19A705470P3
Coil, Fixed: 15 nH; sim to Toko
380NB-15nM. (Used in G3, G4).
L11
19A705470P5
Coil, fixed: 22 nH: sim to Toko
380NB-22nM. (Used in G7).
L12
19A705470P16
Coil, Fixed: 0.18 µH; sim to Toko
380NB-R18M.
L13
19A705470P6
Coil, Fixed: 27 nH; sim to Toko
380NB-27nM. (Used in G3, G4).
Helical, UHF: 425-450 MHz.
(Used in G7).
RESISTORS — — — —
R1
19B800607P183
Metal film: 18K ohms ±5%, 1/8 w.
R2
19B800607P102
Metal film: 1K ohms ±5%, 1/8 w.
R3
19B800607P331
Metal film: 330 ohms ±5%, 1/8 w.
R4
19B800607P270
Metal film: 27 ohms ±5%, 1/8 w.
R5
19B800607P100
Metal film: 10 ohms ±5%, 1/8 w.
(Used in G3, G4).
R5
19B800607P1
Metal film: 0 ohms. (Used in G7).
R6
19B800607P391
Metal film: 390 ohms ±5%, 1/8 w.
(Used in G3, G4).
R7
19B800607P183
Metal film: 18K ohms ±5%, 1/8 w.
R8
19B800607P682
Metal film: 6.8K ohms ±5%, 1/8 w.
R9
19B800607P182
Metal film: 1.8K ohms ±5%, 1/8 w.
L13
19A705470P8
Coil, fixed: 39 nH; sim to Toko
380NB-35nM. (Used in G7).
R10
19B800607P470
Metal film: 47 ohms ±5%, 1/8 w.
(Used in G3).
L14
19A705470P4
Coil, Fixed: 18 nH; sim to Toko
380NB-18nM. (Used in G3, G4).
R10
19B800607P221
19A705470P7
Coil, fixed: 33 nH ±20%; sim to Toko
380NB-33nM. (Used in G3, G4).
Metal film: 220 ohms ±5%, 1/8w.
(Used in G4).
L15
L14
and
L15
19A705470P1
Coil, fixed: 10 nH; sim to Toko
380NB-10nM. (Used in G7).
L16
and
L17
19A705470P5
Coil, Fixed: 22 nH; sim to Toko
380NB-22nM. (Used in G3, G4).
L16
and
L17
19A705470P2
Coil, fixed: 12 nH; sim to Toko
380NB-12 nM. (Used in G7).
L18
19A705470P1
Coil, Fixed: 10 nH; sim to Toko
380NB-10nM. (Used in G3, G4).
L18
19A705470P3
Coil, fixed: 15 nH; sim to Toko
380NB-15nM. (Used in G7).
FILTERS— — — — —
Helical, UHF: 450-470 MHz.
(Used in G3, G4).
————
L19
L20
19A705470P3
19A705470P24
Coil, fixed: 15 nH; sim to Toko
380NB-15nM.
Coil, Fixed: 0.82 µH; sim to Toko
380NB-R82M.
R11
19B800607P331
Metal film: 330 ohms ±5%, 1/8 w.
R12
19B800607P562
Metal film: 5.6K ohms ±5%, 1/8 w.
R13
19B800607P122
Metal film: 1.2K ohms ±5%, 1/8 w.
R14
19B800607P180
Metal film: 18 ohms ±5%, 1/8 w.
(Used in G3, G4).
R14
19B800607P270
Metal film: 27 ohms ±5%, 1/8 w
(Used in G7).
R15
19B800607P270
Metal film: 27 ohms ±5%, 1/8 w.
R16
19B800607P181
Metal film: 180 ohms ±5%, 1/8 w.
R17
19B800607P103
Metal film: 10K ohms ±5%, 1/8 w.
R18
19B800607P562
Metal film: 5.6K ohms ±5%, 1/8 w.
R19
19B800607P183
Metal film: 18K ohms ±5%, 1/8 w.
R20
19B800607P333
Metal film: 33K ohms ±5%, 1/8 w.
R21
19B800607P103
Metal film: 10K ohms ±5%, 1/8 w.
R22
19B800607P822
Metal film: 8.2K ohms ±5%, 1/8 w.
COMPONENTS, ADDED, DELETED OR CHANGED BY PRODUCTION CHANGES
SYMBOL
PART NUMBER
DESCRIPTION
PRODUCTION CHANGES - CONT.
R23
and
R24
19B800607P333
Metal film: 33K ohms ±5%, 1/8 w.
R25
19B800607P104
Metal film: 100K ohms ±5%, 1/8 w.
(Used in G3).
R26
19B800607P273
Metal film: 27K ohms ±5%, 1/8 w.
(Used in G3).
R27
19B800607P391
Metal film: 390 ohms ±5%, 1/8 w.
(Used in G3).
R28
19B800607P103
Metal film: 10K ohms ±5%, 1/8 w.
R29
19B800607P682
Metal film: 6.8K ohms ±5%, 1/8 w.
R30
19B800607P470
Metal film: 47 ohms ±5%, 1/8 w.
R31
19B800607P103
Metal film: 10K ohm,±5%, 1/8w.
R32
19B800607P560
Metal film: 56 ohms,±5%, 1/8w.
R33
19B800607P510
Metal film: 51 ohms,±5%, 1/8w.
(Used in G7).
R34
19B801251P1
Metal film: 0 ohms.
R35
19B800607P270
Metal film: 27 ohms,±5%, 1/8w.
(Used in G7).
———
T1
and
T2
OUTLINE DIAGRAM
PARTS LIST & PRODUCTION CHANGES
LBI-38673F
344A3063P1
TRANSFORMERS
REV. B - RECEIVER FRONT END BOARD 19D902490G7
To improve receiver sensitivity L8 changed from
18nH (19A705470P4) to 33nH (19A705470P7);
R5 changed from 10 ohms (19B800607P100)
to 0 ohms (19B800607P1);
R14 changed from 18 ohms (19B800607P180)
to 27 ohms (19B800607P270);
R6 (19B800607P391) and R36 (19B800607P391)
were deleted.
REV. D - RECEIVER FRONT END BOARD 19D902490G3
Reduce excessive LO drive level. Changed R15 from
10 ohms (19B800607P100) to 27 ohms (19B800607P270).
Changed R16 from 390 ohms (19B800607P391) to
180 ohms (19B800607P181).
——
Transformer.
— — INTEGRATED CIRCUITS —
U1
19A704125P1
Linear: Quad Comparator; sim to
LM339D.
———
MISCELLANEOUS — —
20
19B800701P2
Tuning screw.
21
19A701800P1
Stop nut.
22
19D902467P2
Casting.
28
19D902534P2
Cover, RF. (Used in G4).
29
19D904572P1
Cover, Gasket. (Used in G4).
30
19B802690P1
Grommet. (Used in G4).
PRODUCTION CHANGES
Changes in the equipment to improve or to simplify circuits are
identified by a "Revision Letter", which is stamped after the model
number of the unit. The revision stamped on the unit includes all
previous revisions. Refer to the Parts List for descriptions of parts
affected by these revisions.
REV. A - RECEIVER FRONT END BOARD 19D902490G3
Upgrade to ETSI specs. New PWB.
REV. B - RECEIVER FRONT END BOARD 19D902490G3
REV. A - RECEIVER FRONT END BOARD 19D902490G4
To correct overheating problem.
R14 was 10 ohms (19B800607P100).
REV. C - RECEIVER FRONT END BOARD 19D902490G3
To eliminate receiver spurious response at 100 kHz
switching power supply frequency.
Added C29, C30, C31, C32 and L24.
REV. B - RECEIVER FRONT END BOARD 19D902490G4
REV. A - RECEIVER FRONT END BOARD 19D902490G7
To eliminate receiver spurious response at 100 kHz
switching power supply frequency.
Added C37, C38, C39, C40 and L24.
U1
19A704125P1
Quad Operational Amplifier
RECEIVER FRONT END BOARD
19D902490G3
(19D902490, Sh. 3, Rev. 5)
OUTLINE DIAGRAM
LBI-38673F
RECEIVER FRONT END BOARD
19D902490G4 & G7
(19D902490, Sh. 4, Rev. 6A)
LBI-38673F
RECEIVER FRONT END MODULE
19D902782G3
(19D902782 Sh.1 Rev. 6)
ASSEMBLY DIAGRAM
ASSEMBLY DIAGRAM
LBI-38673F
RECEIVER FRONT END MODULE
19D902782G4 & G7
(19D902782 Sh.2 Rev. 6)
LBI-38673F
RECEIVER FRONT END MODULE
19D902782G4 & G7
(19D904768 Sh.1 Rev. 6)
SCHEMATIC DIAGRAM
SCHEMATIC DIAGRAM
LBI-38673F
RECEIVER FRONT END MODULE
19D902782G3,G4 & G7
(19D904768 Sh.2 Rev. 6)
LBI-38673F
RECEIVER FRONT END MODULE
19D902782G3
(19D903498, Rev. 7)
10
SCHEMATIC DIAGRAM
LBI-38673F
This page intentionally left blank
11
LBI-38674F
MAINTENANCE MANUAL FOR
450-470 MHz, 110 WATT POWER AMPLIFIER
19D902797G3
425-450 MHz, 90 WATT POWER AMPLIFIER
19D902797G7
403-425 MHz, 90 WATT POWER AMPLIFIER
19D902797G6
380-400 MHz, 75 WATT POWER AMPLIFIER
19D902797G8
470-494 MHz, 90 WATT POWER AMPLIFIER
19D902797G9
492-512 MHz, 90 WATT POWER AMPLIFIER
19D902797G10
410-430 MHz, 90 WATT POWER AMPLIFIER
19D902797G11
TABLE OF CONTENTS
DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SPECIFICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CIRCUIT ANALYSIS . . . . . .
POWER AMPLIFIER . . .
Exciter . . . . . . . . .
Small Signal Gain Stage
Low Level Amplifier . .
Driver . . . . . . . . . .
Power Amplifier Finals
POWER CONTROL . . . . . . .
Theory of Operation . .
Signal Interface . . . . .
TROUBLESHOOTING GUIDE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2,3
BLOCK DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
POWER AMPLIFIER READINGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ASSEMBLY DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5,6,7
PARTS LIST . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
PRODUCTION CHANGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,10
IC DATA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
OUTLINE DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10,12
SCHEMATIC DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11,12
LOW PASS FILTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7,13
ericssonz
Ericsson Inc.
Private Radio Systems
Mountain View Road
Lynchburg, Virginia 24502
1-800-528-7711 (Outside USA, 804-592-7711)
Printed in U.S.A.
LBI-38674F
Table 1 - General Specifications
ITEM
SPECIFICATION
FREQUENCY
450 MHz - 470 MHz (G3)
403 MHz - 425 MHz (G6)
425 MHz - 450 MHz (G7)
380 MHz - 400 MHz (G8)
470 MHz - 494 MHz (G9)
492 MHz - 512 MHz (G10)
410 MHz - 430 MHz (G11)
OUTPUT POWER (RF)
65 watts - 130 watts (G3)
55 watts - 110 watts (G6, G7, G9, G10 & G11)
45 watts - 90 watts (G8)
INPUT POWER (RF)
10 mW min. into ≤ 2:1 VSWR.
TEMPERATURE RANGE
-30°C TO +60°C (Ambient air)
SUPPLY VOLTAGE
13.4 Vdc
CURRENT
29 Amps max. (26 A typical @ rated power, 13.4V) (G3)
29 Amps max. (21 A typical @rated power , 13.4V)(G6, G7, G9, G10 & G11)
29 Amps max. (20 A typical @ rated power, 13.4V) (G8)
Figure 1 - Block Diagram
DUTY CYCLE Continuous
STABILITY
Stable into 3:1 VSWR; all temp.,voltage,freq. 55 watts - 110 watts (G3)
or 45 watts - 90 watts (G6, G7, G9, G10 & G11) or 45watts - 90 watts (G8)
RUGGEDNESS AT HIGH VSWR
No damage into open or shorted load.
DESCRIPTION
The UHF Power Amplifier Assembly is a wide band RF
power amplifier operating over the 380-400, 410-430, 403425, 425-450, 450-470, 470-494, and 492-512 MHz range
without tuning. Its main function is to amplify the 10 mW FM
signal from the Transmitter Synthesizer to the rated RF output
at the antenna port. The output of the Power Amplifier Assembly is adjustable from rated power to 3dB lower at the PA
output J104.
The assembly consists of a printed wiring board (A1) and
associated components, including a power module and three
RF power transistors, mounted to the heat sink assembly. The
printed wiring board (A1) contains both the power amplifier
circuitry and the power control circuitry.
Unfiltered supply voltage, A+, for the power amplifier
circuits enters the assembly via feedthrough capacitor, C1.
Power cable W4 routes the A+ from C1 to J103 on the PWB.
Filtered A+ voltage for the power control circuit enters the
assembly via control cable W13 which connects to the PWB at
J201.
The Power Control circuitry sets the output power level by
adjusting the PA Power Set level. It keeps the output power
constant despite variations in input power, power amplifier
gain, or temperature through the use of a feedback control loop
in the PA assembly.
CIRCUIT ANALYSIS
POWER AMPLIFIER
The power amplifier section of the PA Board consists of
an Exciter, a Small Signal Gain Stage, a Low Level Amplifier,
a Driver, and the Power Amplifier Finals. All these gain stages
have an input and output impedance of 50 ohms. Figure 1 is a
block diagram showing the signal flow within the Power Amplifier Assembly.
Exciter (U101)
The Exciter stage uses a broadband silicon monolithic
microwave integrated circuit (MMIC) amplifier. The signal
from transmitter synthesizer, typically 10 dBm (10 mW), is
input to the Exciter through a 10 dB resistive pad (R1, R2, and
R31). The Exciter amplifies the resulting 0 dBm (1 mW)
signal to 12 dBm (16 mW).
Power Set conditions, the LLA amplifies the signal to a
typical output level of 40.5 dBm (11.2 W).
The MMIC requires a 5 volt supply source. The 8 volt
regulator (U100) provides the 5 volts to the MMIC via a
dropping resistor R30.
Driver (Q1)
Small Signal Gain Stage
The Small Signal Gain Stage consists of Q7 and its
associated bias and matching circuitry. Collector voltage is
fed through R39, R40, and L23. Resistor R33 sets the quiescent bias of the part. The transistor input impedance is
matched to the 50 ohm output of the Exciter by C59, C61,
C62, and C63. L24 provides the necessary output matching.
The stage provides 14 dB of gain to amplify the signal from
the Exciter to 26 dBm (400 mW).
Low Level Amplifier (U102)
The Low Level Amplifier (LLA) stage uses a 50 ohm
thick film RF Power Module to amplify and control of the
output power. Internally, the module is a three stage amplifier. The power control circuitry controls the gain of the first
and second stages by varying the collector voltage level of
Q203. The third stage gain remains constant with A+ providing the DC supply voltage.
The signal from the Small Signal Gain stage, typically
26 dBm (400 mW), is input into the LLA. Under typical
The driver is a 6 dB RF amplifier consisting of transistor
Q1 and its associated circuitry. The signal from the LLA,
typically 40.5 dBm (11.2 W), is amplified to 46.5 dBm (45.0
W). The transistor input is matched to 50 ohms by C65, C66,
C27, C67, and a piece of printed transmission line. The drive
signal is then split with a printed in-phase Wilkenson splitter,
providing equal power to each of the final devices.
Power Amplifier Finals (Q2, Q3)
Each of the Power Amplifier Final devices is capable of
producing 5 to 6 dB of gain. The output signal from the
Splitter is impedance matched to each of the finals. Under
optimum conditions each final amplifies the input signal to
between 50 and 70 watts output power (depending on band
split). The outputs are then impedance matched to the input
of the Combiner. The Combiner is a printed in-phase Wilkinson type which combines (sums) the output power of the
finals. This produces an output power of approximately
100W, (depending on band split) which is coupled to the
directional coupler (part of A1 PWB) and on to the antenna
circuits. In addition, the directional coupler samples both
forward and reverse power and sends this sample to the
Power Control circuitry.
Copyright © July 1992, Ericsson GE Mobile Communications Inc.
LBI-38674F
POWER CONTROL
The Power Control circuitry performs three basic functions. It keys and unkeys the PA, sets the PA output power,
and protects the PA against adverse conditions.
Keying and Unkeying the PA
To key the PA, the digital controller places 5 volts on the
PA key line, J201-2. Zero volts on the PA key line causes the
PA to unkey. If the control cable (W13) is disconnected, with
nothing actively driving the PA key line, the PA will remain
unkeyed.
PA Output Power Set
PA output power is set according to the level of the
Power Set line. Four (4) volts on this line will produce
minimum power. As the voltage increases toward eight (8)
volts, the power will increase to its maximum rated output.
The PA output power is initially set at the factory. This is
done by adjusting R43 while injecting a 10 mW signal at J1
and applying 8 volts to J201-3. After setting the maximum
power level, changing the output power in done by varying
the voltage applied on the Power Set line.
PA Protection
The power control also protects the PA against over
temperature and high VSWR conditions.
An over temperature condition exists when the flange
temperature of the final output transistor reaches 80°C. At
this point the output power will drop below its set level. The
output power will continue to drop such that when the flange
temperature reaches 125°C the PA output drops at least 10
dB below its set level.
Reflected power is limited to 25% of the set power. If
the output VSWR degrades to worse than 3:1 the forward
power will be reduced to limit the reflected power to 25% of
the set power. The Power Sensor line indicates when the PA
is operating in a cutback condition. If the PA is keyed and
the power control is cutting back, the Power Sensor line will
drop to zero (0) volts and the PA alarm light on the station
will turn on.
The stripline directional coupler samples the output
power and produces a voltage, Vf, proportional to the forward output power. The power control compares the forward
voltage, Vf, to a reference voltage at U3. The output of U3
controls the current flow thru Q5 and the output of Q203.
The collector output of Q203 adjusts the control voltage,
Vct1 and Vct2. This control voltage is capable of adjusting
the total PA output power since it provides the first two stages
DC supply to the Low Level Amplifier, U1.
During over temperature operation, a scaled representation of the forward power is maintained constant by
varying the control voltage line. Thermal resistor RT1 sensing an increase in temperature causes the output of U3.1 to
increase. If the output of U3.1 becomes larger than the other
feedback lines, the output of U3.4 will begin to decrease.
This in turn will cause the output of Q203 to decrease
reducing the supply voltage to U1. Since the scaling is a
function of temperature the power is reduced as the temperature increases.
Under VSWR cutback operation the reverse voltage, Vr,
representative of the reflected output power is held below a
threshold by reducing the control voltage as necessary. If Vr
increases at U3.1 beyond the preset threshold an increase at
U3.4 will result. This causes a subsequent reduction in the
control voltage to U1. Thus the power control circuit reduces
the output power in order to limit the reflected power to 25%
of the set power.
PA Key (Interface Connector pin 2)
–
PWR Sensor
–
PA Key
–
PA PWR Set
–
NC
–
Ground
–
Fil A+
Pwr Sensor
Power control of the MASTR III Power Amplifier is
accomplished with a feedback control loop. The three possible feedback signals are: representation of forward power,
temperature sensitive scaled representation of forward
power, or representation of reflected power. These three
signals are input to a diode summing junction which selects
the largest of the three for use as the feedback.
This line indicates when the PA is experiencing adverse
conditions. Under normal operation, while the PA is keyed,
this line will be proportional to forward power. Minimum
power (zero watts) corresponds to 2.5 volts while maximum
power corresponds to 4.5 volts. This voltage is not temperature compensated and no effort is made to calibrate this
signal to an absolute power level. It is intended to provide a
relative indication of forward power and to discriminate
between normal and cutback operation.
PA PWR Set (Interface Connector pin 3)
This line is used to set the RF Power Output of the PA.
Minimum power output equals 4 volts and maximum power
output equals 8 volts. The driver of this line must be capable
of supplying 8 volts at 1.0 mA.
Fil A+ (Interface Connector pin 6)
This line provides the filtered supply voltage for the Power
Control. The driver of this line must be capable of supplying
13.4 volts ±20% at 100 mA.
TROUBLESHOOTING GUIDE
SYMPTOM
1.
No Power or low Power at
Antenna Port.
The signal interface to the MASTR III Power Amplifier
is supported by a six position feedthrough connector, J201,
with the following pinout:
of supplying 5 volts at 1.0 mA. The appropriate key sequence
requires RF from the transmit synthesizer be input to the PA
before the KEY line is energized.
This line is used to key and unkey the PA. UNKEY = 0
volt and KEY = 5 volts. The driver of this line must be capable
Signal Interface
Theory of Operation
Zero volts on this line, when the PA is keyed, indicates the
forward power is cutback. This power cutback may be due to
high reflected power or may be due to high PA temperatures.
This fault condition may indicate a problem with the PA or may
indicate a system problem external to the Power Amplifier.
High VSWR may be due to a poor antenna and high temperature may be due to a blocked cabinet vent. Zero volts on this
line, when the PA is keyed, does not indicate zero forward
power. Zero volts indicates the PA is protecting itself due to
adverse conditions. If the adverse condition, either high VSWR
or high temperature is eliminated, the power will return to
normal and the PWR SENSOR voltage will rise above 2.5
volts.
AREAS TO CHECK
INDICATIONS
1.
Measure the transmitter output
power before the duplexer or
antenna switch (for simplex mode).
The presence of power at this port
is an indication of a defective
duplexer, switch, or cables.
2.
Measure the transmitter output
power before the low pass filter.
The presence of power at this port
is an indication of a defective filter
or cables.
3.
Measure the transmitter output
power before the optional isolator
at the PA output port.
The presene of power at this port
is an indication of a defective isolator
or cables.
2.
No power at PA output port
and PA ALARM is OFF.
1.
Station is in receive mode.
3.
No power at PA output port
and PA ALARM is ON.
1.
No RF input to PA. Check
connection between PA and TX
Synthesizer.
2.
Check the logic or DC inputs to
the PA from the Interface Board
through J201.
3.
TX Synthesizer should deliver
a minimum of 10 mW
(10 dBm) to the PA.
a.
J201-2 PA KEY
5volts during transmit
b.
J201-3 POWER SET
4 volts to 8 volts (4 volts
represents zero RF power)
c.
J201-6 13.8 VF
13.8 Vdc ±20%
Defective PA
Replace PA
LBI-38674F
UHF POWER AMPLIFIER TYPICAL VOLTAGE READINGS
(50 ohm, room temperature, 13.4 Vdc supply voltage, and rated output)
TROUBLESHOOTING GUIDE (cont’d)
SYMPTOM
4.
5.
AREAS TO CHECK
Low power at PA output port
and PA ALRAM is OFF.
Low power at PA output port
and PA ALARM is ON.
Group
Low
Mid
High
G3
G6
G7
G8
G9
G10
G11
450 MHZ
403 MHZ
425 MHZ
380 MHZ
470 MHZ
492 MHZ
410 MHZ
460 MHZ
414 MHZ
437 MHZ
390 MHZ
482 MHZ
502 MHZ
420 MHZ
470 MHZ
425 MHZ
450 MHZ
400 MHZ
494 MHZ
512 MHZ
430 MHZ
Vct 1 (Volts DC)
G3
G6
G7
G8
G9 & G10
G11
7 - 10 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
4 - 6 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
Vf (Volts DC)
G3
G6
G7
G8
G9 & G10
G11
5 - 7 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
5 - 7 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
5 - 7 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
Vr (Volts DC)
G3
G6
G7
G8
G9 & G10
G11
2 - 3 Volts
2 - 3 Volts
2 - 3 Volts
2 - 3 Volts
2 - 3 Volts
2 - 3 Volts
2 - 3 Volts
2 - 3 Volts
2 - 3 Volts
2 - 3 Volts
2 - 3 Volts
2 - 3 Volts
2 - 3 Volts
2 - 3 Volts
2 - 3 Volts
2 - 3 Volts
2 - 3 Volts
2 - 3 Volts
J201 - 1 (Volts DC)
G3
G6
G7
G8
G9 & G10
G11
2.5 - 4 Volts
2.5 - 4 Volts
2.5 - 4 Volts
2.5 - 4 Volts
2.5 - 4 Volts
2.5 - 4 Volts
2.5 - 4 Volts
2.5 - 4 Volts
2.5 - 4 Volts
2.5 - 4 Volts
2.5 - 4 Volts
2.5 - 4 Volts
2.5 - 4 Volts
2.5 - 4 Volts
2.5 - 4 Volts
2.5 - 4 Volts
2.5 - 4 Volts
2.5 - 4 Volts
J201 - 3 (Volts DC)
G3
G6
G7
G8
G9 & G10
G11
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
6 - 8 Volts
J201- 6 (Volts DC)
G3
G6
G7
G8
G9 & G10
G11
13.4 Volts
13.4 Volts
13.4 Volts
13.4 Volts
13.4 Volts
13.4 Volts
13.4 Volts
13.4 Volts
13.4 Volts
13.4 Volts
13.4 Volts
13.4 Volts
13.4 Volts
13.4 Volts
13.4 Volts
13.4 Volts
13.4 Volts
13.4 Volts
INDICATIONS
1.
Low RF input to PA from TX
Synthesizer.
Power should be a minimum of 10
mW (10 dBm).
2.
Check the voltage on J201-3
(POWER SET).
For minimal output power, this
voltage should be above 7 volts.
3.
Check the power supply voltage
on the collector of Q1, Q2
and Q3
Voltage should be minimal 13.4
Vdc.
4.
One of the two final PA
transistors (Q2 or Q3) is
defective.
Replace the defective transistor.
1.
Check for over temperature and/
or a high VSWR condition due to
a mismatch at the output port.
The power control circuit protects
the PA by cutting back the power.
In case of a mismatch, refer to
symptom 1.
Frequency
UHF POWER AMPLIFIER VOLTAGE CHART
PARAMETER
(50 ohm, -30°C to +60°C)
SUPPLY VOLTAGE
REFERENCE
SYMBOL
READINGS
(volts DC)
A+
13.4 V ±20%
CONTROL VOLTAGE
Vct1
0 - 12 V
FORWARD VOLTAGE
Vf
3-7V
REVERSE VOLTAGE
Vr
2-6V
POWER SENSE
J201-1
2.5 - 4 V
PA KEY
J201-2
5V
POWER SET
J201-3
4-8V
13.8 VF
J201-6
13.8 V ±20%
LBI-38674F
RATED POWER FOR MASTR III UHF BASE STATION
FREQUENCY
MHz
STANDARD
@J2
ADJUSTABLE
RANGE
@J104
WITH
DUPLEXER
WITH
ISOLATOR
WITH DUPLEXER
AND ISOLATOR
450-470
425-450
403-425
380-400
410-430
470-494
492-512
110W
90W
90W
75W
90W
90W
90W
65-130W
55-110W
55-110W
45-90W
55-110W
55-110W
55-110W
75W
60W
60W
50W
60W
60W
60W
100W
82W
82W
68W
82W
82W
82W
70W
55W
55W
47W
55W
55W
55W
ASSEMBLY DIAGRAM
LBI-38674F
POWER AMPLIFIER ASSEMBLY
19D902797G3, G6, G7, G8, G9, G10 & G11
(19D902797 Sh. 3, Rev. 10)
LBI-38674F
POWER AMPLIFIER ASSEMBLY
19D902797G3, G6, G7, G8, G9, G10 & G11
(19D902797 Sh. 2, Rev. 10)
ASSEMBLY DIAGRAM
COVER ASSEMBLY
19B801659G3
(19B801659, Sh. 2, Rev. 3)
ASSEMBLY DIAGRAMS
LBI-38674F
LOW PASS FILTER MODULE
19D902856G3
(19D902856 Sh. 1, Rev. 0)
PARTS LIST
LBI-38674F
110 WATT UHF POWER AMPLIFIER 19D902797G3
90 WATT UHF POWER AMPLFIER 19D902797G6, G7
& G9 - G11
75 WATT UHF POWER AMPLFIER 19D902797G8
ISSUE 6
SYMBOL
PART NO.
DESCRIPTION
SYMBOL
PART NO.
C34
and
C35
344A3126P18
C36
344A3126P3
C1
19A116708P2
Po r c ela in: 2 .2 pF ±0.25%, 500 VDCW;
2R2CT500X. (Used in G8).
- - - - - - - - - - CAPACITORS - - - - - - - - - - -
C39
19A705108P40
Mica chip: 120 pF, ±5%, 100 VDCW. temp coef 0 ±50
PPM/°C. (Used in G8, G9, G10 and G11).
Feedthru: 0.01uF +100-0%, 500 VDCW; sim to Erie 327050-X5W0103P.
C40
19A702052P26
Ceramic: 0.1 µF ±10%, 50 VDCW. (Used in G8, G9 and
G10).
C41
344A3126P38
Porcelain: 100 pF ±5%, 500 VDCW. sim to 101JT500X.
(Used in G11).
C42
thru
C45
19A702052P26
Ceramic: 0.1 µF ±10%, 50 VDCW.
19A702061P63
Ceramic: 120 pF ±5%, 50 VDCW, temp coef 0 ±30 PPM.
C10
344A3126P38
Porcelain: 100 pF ±5%, 500 VDCW. sim to 101JT500X.
C11
19A702061P63
Ceramic: 120 pF ±5%, 50 VDCW, temp coef 0 ±30 PPM.
C12
19A705108P40
Mica chip: 120 pF, ±5%, 100 VDCW. temp coef 0 ±50
PPM°C.
344A3126P38
sim to
Tantalum: 10 µF, 25 VDCW; sim to Sprague 293D. (Used
in G8, G9, G10 and G11).
C2
thru
C9
Porcelain: 100 pF ±5%, 500 VDCW. sim to 101JT500X.
C46
and
C47
344A3126P11
Mica/teflon: 27 pF ±2%, 100 VDCW. (Used in G9 and G10).
Mica/teflon: 27 pF ±2%, 100 VDCW. (Used in G9).
C94
19A700006P57
Mica/teflon: 43 pF ±2%, 100 VDCW. (Used in G8).
19A700006P49
Mica/teflon: 36 pF ±2%, 100 VDCW (G3).
C94
19A700006P49
Mica/teflon: 36 pF ±2%, 100 VDCW (G7).
C69
19A700006P58
Mica/teflon: 47 pF ±2%, 100 VDCW. (Used in G6 and G11).
C94
19A700006P58
Mica/teflon: 47 pF ±2%, 100 VDCW. (Used in G6 and G11).
C69
19A700006P50
Mica/teflon: 39 pF ±2%, 100 VDCW (G7).
C94
19A700006P48
19A700006P55
Mica/teflon: 27 pF ±2%, 100 VDCW. (Used in G9).
Mica/teflon: 33 pF ±2%, 100 VDCW. (Used in G3, G9, and
G10).
C69
C69
19A700006P57
Mica/teflon: 43 pF ±2%, 100 VDCW. (Used in G8).
C70
19A702061P49
Ceramic: 56 pF ±5%, 50 VDCW, temp coef 0 ±30 PPM.
19A705377P4
Silicon: Hot Carrier; sim to HP HSMS-2802.
C71
19A702061P63
Ceramic: 120 pF ±5%, 50 VDCW, temp coef 0 ±30 PPM.
D1
thru
D3
C72
and
C73
19A702052P26
Ceramic: 0.1 µF ±10%, 50 VDCW.
D4
thru
D6
19A700053P3
Silicon: 2 Diodes in Series, Common Cathode; sim to
MBAV70L.
C75
thru
C77
19A702052P26
Ceramic: 0.1 µF ±10%, 50 VDCW.
C78
and
C79
19A705205P7
Tantalum: 10 µF, 25 VDCW; sim to Sprague 293D.
J101
19A705512P1
Connector, RF SMB Series: sim to AMP No. 221111-1.
J103
19A134263P1
Contact, electrical: sim to Selectro 229-1082-00-0-590.
C81
344A3126P62
Porcelain: 1000 pF ±5%, 500 VDCW; sim to 102JT500X.
J104
7777145P5
Receptacle: sim to Amphenol 82-97.
C82
and
C83
19A705108P40
Mica chip: 120 pF, ±5%, 100 VDCW, temp coef 0 ±50 PPM/°C.
J201
19A704852P32
Printed wire, two part: 6 contacts, sim
C84
19A702061P89
Ceramic: 1500 pF ±5%, 50 VDCW, temp coef 0 ±30
PPM.(Used in G3, G6-G9, G11).
19A705108P40
Mica chip: 120 pF, ±5%, 100 VDCW, temp coef 0 ±50 PPM/°C.
C69
19A705205P7
Ceramic: 0.1 µF ±10%, 50 VDCW,
Mica/teflon: 33 pF ±2%, 100 VDCW. (Used in G3).
19A700006P55
344A3126P2
Porcelain: 8.2 pF ±5%, 500 VDCW; sim to 8R2CT500X.
(Used in G9 and G10).
Porcelain: 15 pF ±5%, 500 VDCW; sim to 100JT500X.
(Used in G10).
C46
and
C47
344A3126P13
C48
19A702052P26
Ceramic: 0.1 µF ±10%, 50 VDCW.
Mica/teflon: 22 pF ±2%, 100 VDCW. (Used in G10).
to Molex 22-29-2061.
19A702052P26
Ceramic: 0.1 µF ±10%, 50 VDCW.
C49
19A702236P40
Ceramic: 39 pF ±5%, 50 VDCW, temp coef 0 ±30 PPM/°C.
C18
19A705108P40
Mica chip: 120 pF, ±5%, 100 VDCW. temp coef 0 ±50
PPM°C.
C50
19A702052P26
Ceramic: 0.1 µF ±10%, 50 VDCW.
Porcelain: 100 pF ±5%, 500 VDCW. sim to 101JT500X.
C51
19A705205P7
Tantalum: 10 µF, 25 VDCW; sim to Sprague 293D.
C85
and
C86
Mica chip: 120 pF, ±5%, 100 VDCW. temp coef 0 ±50
PPM°C.
C53
and
C54
19A705205P7
Tantalum: 10 µF, 25 VDCW; sim to Sprague 293D.
C87
19A700006P60
Mica/teflon: 56 pF ±2%, 100 VDCW. (Used in G8).
C87
19A700006P58
Ceramic: 0.1 µF ±10%, 50 VDCW.
C57
19A705205P7
Tantalum: 10 µF, 25 VDCW; sim to Sprague 293D.
C87
Porcelain: 8.2 pF ±5%, 500 VDCW; sim to 8R2CT500X.
(Used in G3).
C87
344A3126P38
C20
and
C21
19A705108P40
C22
and
C23
19A702052P26
C24
19A702061P63
Ceramic: 120 pF ±5%, 50 VDCW, temp coef 0 ±30 PPM.
C25
344A3126P38
Porcelain: 100 pF ±5%, 500 VDCW. sim to 101JT500X.
C26
C27
C27
C28
C28
C28
C28
C58
344A3126P62
344A3126P13
344A3126P15
344A3126P18
344A3126P15
344A3126P13
344A3126P11
Porcelain: 1000 pF ±5%, 500 VDCW; sim to 102JT500X.
Porcelain: 15 pF ±5%, 500 VDCW; sim to 100JT500X.
(Used in G7 and G8).
344A3126P11
- - - - - - - - - - - - DIODES - - - - - - - - - - - -
- - - - - - - - - - - - - - JACKS - - - - - - - - - - - - - -
C17
C19
DESCRIPTION
19A700006P55
C68
C37
PART NO.
19A700006P48
Po r c e la i n : 3 . 9 p F ±0 . 2 5 %, 5 0 0 V DC W; s i m t o
3R9CT500X. (Used in G8).
Po r c e la i n : 4 . 7 p F ±0 . 2 5 %, 5 0 0 V DC W; s i m t o
4R7CT500X. (Used in G6 and G11).
SYMBOL
C93
19A700006P53
344A3126P5
DESCRIPTION
C93
C68
and
C69
C38
19A702052P26
PART NO.
Porcelain: 15 pF ±5pF, 500 VDCW; simto 150JT500X.
(Used in G6, G7 and G11).
POWER AMPLIFIER BOARD
19D902794G3, G6 - G11
C1
C13
thru
C16
SYMBOL
C36
ASSEMBLIES
A1
DESCRIPTION
- - - - - - - - - - - - - - INDUCTORS - - - - - - - - - - - - - L1
19C320617P10
Coil.(Used in G3, G6-G9 and G11).
L1
19C320617P17
Coil.(Used in G10).
L2
19A701091G1
Coil (Used in G6, G7, G8 and G11).
Mica/teflon: 47 pF ±2%, 100 VDCW. (Used in G6, and G11).
L3
19C320617P10
Coil (Used in G6, G7, G8, G10 and G11).
19A700006P57
Mica/teflon: 43 pF ±2%, 100 VDCW. (Used in G7).
L4
19C320617P28
Coil.
19A700006P50
Mica/teflon: 39 pF ±2%, 100 VDCW. (Used in G3).
L5
19A701091G1
Coil (Used in G6, G7, G8 and G11).
C87
19A700006P48
Mica/teflon: 33 pF ±2%, 100 VDCW. (Used in G9 and G10).
L6
19C320617P10
Coil (Used in G6, G7, G8, G10 and G11).
C88
19A700006P59
Mica/teflon: 51 pF ±2%, 100 VDCW. (Used in G6, G8, and
G11).
L7
19A705470P4
Coil, Fixed: 15 nH; sim to Toko 380NB-15nM.
L8
19A705470P8
Coil, Fixed: 39 nH; sim to Toko 380NB-39nM.
L14
19C320617P17
Coil.
L15
thru
L17
19A700024P13
Coil, RF: 1.0 µH ±20%.
C58
344A3126P15
Porcelain: 12 pF ±5%, 500 VDCW ; sim to 120JT500X.
(Used in G6, G7, G8 and G11).
C58
344A3126P7
Po r c e la i n : 5 . 6 p F ±0 . 2 5 %, 5 0 0 V DC W; s i m t o
5R6CT500X. (Used in G9, G10).
C88
19A700006P57
Mica/teflon: 39 pF ±2%, 100 VDCW. (Used in G3).
C59
19A702061P49
Ceramic: 56 pF ±5%, 50 VDCW, temp coef 0 ±30 PPM.
C88
Porcelain: 12 pF ±5%, 500 VDCW; sim to 120JT500X.
(Used in G6 and G11).
C60
19A702061P65
Ceramic: 150 pF ±5%, 50 VDCW, temp coef 0 ±30
PPM/°C.
C88
19A700006P48
Mica/teflon: 33 pF ±2%, 100 VDCW. (Used in G9 and G10).
C89
19A700006P59
Porcelain: 15 pF ±5%, 500 VDCW; sim to 150JT500X.
(Used in G8).
C61
Mica/teflon: 51 ohms ±2%, 100 VDCW. (Used in G6, G8, and
G11).
L18
19C320617P17
Coil.
C89
19A700006P57
Mica/teflon: 43 pF ±2%, 100 VDCW. (Used in G7).
L23
19A705470P8
Coil, Fixed: 39 nH; sim to Toko 380NB-39nM.
Porcelain: 12 pF ±5%, 500 VDCW; sim to 120JT500X.
(Used in G6).
C62
Ceramic: 120 pF ±5%, 50 VDCW, temp coef 0 ±30
PPM/°C.
C89
19A700006P50
Mica/teflon: 39 pF ±2%, 100 VDCW. (Used in G3).
L25
19A701091G1
Coil.
19A700006P48
Mica/teflon: 33 pF ±2%, 100 VDCW. (Used in G9 and G10).
L29
and
L30
19C320617P10
Coil.
344A3948P1
Silicon, NPN: 440-512 MHz, 50W; sim to MRF 650.
Porcelain: 15 pF ±5%, 500 VDCW; sim to 100JT500X.
(Used in G11).
Porcelain: 8.2 pF ±5%, 500 VDCW; sim to 8R2CT500X.
(Used in G7).
19A702061P17
19A702236P52
Ceramic: 12 pF ±10 pF, 50 VDCW, temp coef 0 ±30
PPM/°C.
19A700006P50
Mica/teflon: 43 pF ±2%, 100 VDCW. (Used in G7).
C64
344A3126P38
Porcelain: 100 pF ±5%, 500 VDCW; sim to 101JT500X.
C89
C65
344A3126P11
Porcelain: 8.2 pF ±5%, 500 VDCW; sim to 8R2CT500X.
(Used in G3).
C90
19A700006P60
Mica/teflon: 56 pF ±2%, 100 VDCW. (Used in G8).
C90
19A700006P58
Mica/teflon: 47 pF ±2%, 100 VDCW. (Used in G6 and G11).
C90
19A700006P57
Mica/teflon: 43 pF ±2%, 100 VDCW. (Used in G7).
C65
344A3126P5
Porcelain:4.7 pF ±0.25%, 500 VDCW; sim to 4R7CT500X.
(Used in G9, G10).
- - - - - - - - - - - TRANSISTORS - - - - - - - - - - - -
C29
344A3126P18
Porcelain: 15 pF ±5%, 500 VDCW; sim to 150JT500X.
(Used in G8).
C66
19A700006P58
Mica/teflon: 47 pF ±2%, 100 VDCW. (Used in G8).
C90
19A700006P50
Mica/teflon: 39 pF ±2%, 100 VDCW. (Used in G3).
Q1
C29
344A3126P15
Porcelain: 12 pF ±5%, 500 VDCW; sim to 120JT500X.
(Used in G6).
C90
19A700006P48
Mica/teflon: 33 pF ±2%, 100 VDCW. (Used in G9 and G10).
C91
19A700006P57
Mica/teflon: 43 pF ±2%, 100 VDCW. (Used in G8).
Q2
and
Q3
Silicon, NPN: 470-512 MHz, 65W; sim to MRF 658.
19A700006P55
Mica/teflon: 27 pF ±2%, 100 VDCW. (Used in G9 and
G10).
344A4134P1
C66
C91
19A700006P58
Mica/teflon: 47 pF ±2%, 100 VDCW. (Used in G9 and G11).
Q4
and
Q5
19A700076P2
Silicon, NPN: sim to MMBT3904, low profile.
C29
344A3126P13
Porcelain: 15 pF ±5%, 500 VDCW; sim to 100JT500X.
(Used in G11).
C66
19A700006P50
Mica/teflon: 39 pF ±2%, 100 VDCW. (Used in G6, G7, and
G11).
C29
344A3126P11
Porcelain: 8.2 pF ±5%, 500 VDCW; sim to 8R2CT500X.
(Used in G7).
C66
19A700006P48
Mica/teflon: 33 pF ±2%, 100 VDCW. (Used in G3).
C91
19A700006P49
Mica/teflon: 36 pF ±2%, 100 VDCW. (Used in G7).
19A700006P48
Mica/teflon: 33 pF ±2%, 100 VDCW. (Used in G3, G9 and
G10).
Q7
19A701940P1
Silicon, NPN: sim to MRF 559.
Q7
344A3058P1
Silicon, NPN.
Q203
19A700055P1
Silicon, PNP.
R1
and
R2
19B800607P270
Metal film: 27 ohms ±5%, 1/8 w.
C30
344A3126P15
Porcelain: 12 pF ±5%, 500 VDCW; sim to 120JT500X.
(Used in G8).
C67
19A700006P58
Mica/teflon: 47 pF ±2%, 100 VDCW. (Used in G6 and
G11).
C91
C67
19A700006P50
Mica/teflon: 39 pF ±2%, 100 VDCW. (Used in G7 and G8).
19A700006P59
Mica/teflon:(Used in G8).
344A3126P11
Porcelain: 8.2 pF ±5%, 500 VDCW; sim to 8R2CT500X.
(Used in G3, G9, G10).
C92
C30
C92
19A700006P57
Mica/teflon: 43 pF ±2%, 100 VDCW. (Used in G6 and G11).
C92
19A700006P50
Mica/teflon: 39 pF ±2%, 100 VDCW. (Used in G7).
C92
19A700006P48
Mica/teflon: 33 pF ±2%, 100 VDCW. (Used in G3).
C92
19A700006P55
Mica/teflon: 27 pF ±2%, 100 VDCW. (Used in G9 and G10).
C93
19A700006P59
Mica/teflon: 51 ohms ±2%, 100 VDCW. (Used in G8).
Metal film: 100 ohms ±5%, 1/2 w.
19A700006P57
Mica/teflon: 43 pF ±2%, 100 VDCW. (Used in G6 and G11).
R3
thru
R6
19B801486P101
C93
C93
19A700006P50
Mica/teflon: 39 pF ±2%, 100 VDCW. (Used in G7).
R7
19B800607P183
Metal film: 18K ohms ±5%, 1/8 w.
C31
344A3126P15
C67
19A700006P49
Mica/teflon: 36 pF ±2%, 100 VDCW (G3).
Porcelain: 12 pF ±5%, 500 VDCW; sim to 120JT500X.
(Used in G8).
C67
19A700006P55
Mica/teflon: 27 pF ±2%, 100 VDCW. (Used in G9 and
G10).
C68
C31
344A3126P11
Porcelain: 8.2 pF ±5%, 500 VDCW; sim to 8R2CT500X.
(Used in G3, G9, G10).
C32
and
C33
344A3126P1
Porcelain: 3.3 pF ±.25pF, 500 VDCW; sim to 3R3CT500X.
(Used in G3).
* COMPONENTS, ADDED, DELETED OR CHANGED BY PRODUCTION CHANGES
C68
C68
19A700006P58
19A700006P50
19A700006P48
Mica/teflon: 47 pF ±2%, 100 VDCW. (Used in G8 and
G11).
Mica/teflon: 39 pF ±2%, 100 VDCW. (Used in G6, G7, and
G11).
Mica/teflon: 33 pF ±2%, 100 VDCW (G3).
- - - - - - - - - - - - RESISTORS - - - - - - - - - - - -
PARTS LIST & PRODUCTION CHANGES
SYMBOL
PART NO.
R8
thru
R10
19B800607P103
R11
19B800607P223
R12
thru
R18
R19
and
R20
DESCRIPTION
SYMBOL
PART NO.
- - - - - - - - - - - - - - JACKS - - - - - - - - - - - - - -
Metal film: 10K ohms ±5%, 1/8 w.
J1
19B800607P103
19B800607P472
R21
thru
R23
19B800607P102
R24
thru
R26
19B800607P103
R27
19B800607P822
Metal film: 22K ohms ±5%, 1/8 w.
J104
7777145P5
Metal film: 10K ohms ±5%, 1/8 w.
Metal film: 4.7K ohms ±5%, 1/8 w.
Metal film: 1K ohms ±5%, 1/8 w.
SYMBOL
PART NO.
DESCRIPTION
35
19A705469P1
Insulator Plate, TO-220.
Part of W1.
36
19A700068P1
Insulator, bushing.
Receptacle: sim to Amphenol 82-97.
37
19A134455P3
Flat washer.
38
19B801659G3
Cover (see separate parts list).
41
19A700033P6
Loackwasher, external tooth, M3.5.
- - - - - - - - - - - - - - TRANSISTORS - - - - - - - - - - - - - -
Q2
and
Q3
344A4134P1
Silicon, NPN: UHF Amplifier.
46
19A701312P4
Flatwasher: 3.2 ID.
50
19A702381P408
Tap screw, TORX Drive, M3-0.5 x 8.
C1
19A700006P1
Mica: 4.7 pF ±10%, 100 VDCW.
Q203
19A700055P1
Silicon, PNP: Darlington; sim to TIP-125.
51
19A705106P1
Resistor Spacer.
C2
and
C3
19A700006P3
Mica: 6.8 pF ±10%, 100VDCW.
R28
and
R29
19A143832P6
Power: 100 ohm 5%, 40 w.
L1
thru
L4
19C320617P17
Coil.
- - - - - - - - - - - - CAPACITORS - - - - - - - - - - - -
COVER
19B801659G3
- - - - - - - - - - - - - - RESISTORS - - - - - - - - - - - - - 2
19D902421P1
Screw, thread forming:
Washer.
11
19A149969P3
Shield.
PA module: 440-470 MHz; sim to M57704H. (Used in G3).
13
5493477P9
Axial fan.
19A705457P1
PA module: 400-450 MHz; sim to M57704M. (Used in G7).
14
5493477P10
Grille.
U1
19A705457P3
PA module: 470-512 MHz; sim to M57704SH. (Used in G9
and G10).
15
N80P13028B6
Machine screw.
U1
19A705457P7
PA module: 380-400 MHz; sim to M57704UL. (Used in G8).
16
N210P21B6
Machine nut.
Metal film: 10 ohms ±5%, 1/2 w.
19A701312P5
Flatwasher: M3.5.
19A700050P17
Wirewound: 2.2 ohms ±10%, 2 w. (Used in G3, G9).
U1
17
18
19A701863P10
Clip, loop.
R36
19B801486P101
Metal film: 100 ohms ±5%, 1/2 w. (Used in G40, G3, and G6).
20
19A702364P410
Machine screw.
R37
19B801486P331
Metal film: 330 ohms ±5%, 1/2 w. (Used in G3, G6-G9, G11).
24
N405P37B6
Lock washer.
25
L401P23B6
Split washer.
26
19A700034P5
Hex nut.
R30
19B800607P750
Metal film: 75 ohms ±5%, 1/8w.
U1
19A705457P2
R31
19B800607P330
Metal film: 33 ohms ±5%, 1/8 w.
U1
R32
19A700050P17
Wirewound: 2.2 ohms ±10%, 2 w. (Used in G3, G9, and G10).
R33
19B800607P392
Metal film: 3.9K ohms ±5%, 1/8 w.
R34
19B801486P100
R35
- - - - - - - - - - -INTEGRATED CIRCUITS - - - - - - - - - - - -
Metal film: 10 ohms ±5%, 1/8 w.
R41
19A702931P333
Metal film: 21.5K ohms ±1%, 200 VDCW, 1/8 w.
R42
19A702931P293
Metal film: 9090 ohms ±1%, 200 VDCW, 1/8 w.
U2
19A705457P4
19A702293P3
PA module: 400-420 MHz; sim to M57704L. (Used in G6).
Linear: Dual Op Amp; sim to LM358D.
U3
19A701789P4
Linear: Quad Op Amp; sim to LM224D.
U7
344A3907P1
Monolithic microwave IC (MMIC): sim to Avantek MSA-1105.
U100
19A705532P2
Integrated Circuit, Linear (Positive Voltage Regulator): sim to
MC78T15CT.
W1
19B801529G4
RF Input Cable. Includes the following:
RF Cable.
R43
19A700109P5
Variable, cermet: 25 ohms to 10K ohms ±20%, 1/4 w.
R44
thru
R46
19B801486P101
Metal film: 100 ohms ±5%, 1/2 w.
19A705512P3
Connector, RF SMB series: sim to AMP 228213-1.
19A115938P1
Connector, coaxial: (BNC Series); sim to Amphenol 31-318.
R47
and
R48
19B801486P750
R49
19B801486P101
R50
R51
19B800607P1
19B801486P331
W4
Metal film: 100 ohms ±5%, 1/2 w. (Used in G3, G6-G9, G11).
Metal film: Jumper. (Used in G8, G9, G10 and G11).
19B801695G11
Power Cable. Includes the following:
19B209268P115
Solderless terminal.
19B209260P11
Solderless terminal.
19A115959P2
Wire, stranded.
19A701503P2
Cable: battery, red.
19A701503P10
Cable: battery, black.
19B209268P116
Solderless terminal.
W10
19B801937P1
Power cable.
W13
19B801739P1
Power control cable.
Metal film: 330 ohms ±5%, 1/2 w.(Used in G3, G6-G9, G11).
R52
19B801486P100
Metal film: 10 ohms ±5%, 1/2 w.
R53
19B800607P1
Metal film: Jumper.
R54
19B800607P472
Metal film: 4.7 ohms ±5%, 1/8 w.
R55
19B800607P103
Metal film: 10K ohms ±5%, 1/8 w.
R56
19B800607P330
Metal film: 33 ohms ±5%, 1/8 w.
R57
19B800607P222
Metal film: 2.2 ohms ±5%, 1/8 w.
19D902420P6
Heatsink.
R58
and
R59
19A700113P7
Composition: 4.7 ohms ±5%, 1/2 w (Used in G10).
19A702381P510
Screw, thread forming: TORX DRIVE No. M3.5 0.6 x 10.
7139898P3
Nut, hex, brass: No. 1/4-28.
11
19A702364P310
Machine screw, TORX Drive: No. M3-0.5 x 10.
14
19B209268P113
Terminal, solderless: sim to AMP 2-34835-4. (Used in G11).
19A115959P2
Wire, stranded. (Used in G11).
19B209268P116
Solderless terminal. (Used in G11).
- - - - - - - - - - - - - - THERMISTOR - - - - - - - - - - - - - RT1
19A705813P2
VR1
and
VR2
19A700083P102
Silicon: 5.1 Volt Zener; sim to BZX84-C5V1.
- - - - - - - - - - - - - - CAPACITORS - - - - - - - - - - - - - C1
19A116708P2
- - - - - - - - - - - - - MISCELLANEOUS - - - - - - - - - - - -
Thermistor: sim to AL03006-58.2K-97-G100.
- - - - - - - - - - - VOLTAGE REGULATORS - - - - - - - - - - -
Ceramic feedthru: 0.01 µF -0 +100%, 500 VDCW; sim to Erie
327-050-X5W0103P.
- - - - - - - - - -MISCELLANEOUS - - - - - - - - - 11
19A702455P5
Nut, self clinching.
PRODUCTION CHANGES
Changes in the equipment to improve performance or to simplify
circuits are identified by a "Revision Letter" which is stamped after
the model number of the unit. The revision stamped on the unit
includes all previous revisions. Refer to the Parts List for the
descriptions of parts affected by these revisions.
- - - - - - - - - - - - - - - - CABLES - - - - - - - - - - - - - - - -
19B800560P2
Metal film: 75 ohms ±5%, 1/2 w.
- - - - - - - - - - - - INDUCTORS - - - - - - - - - - - -
Power Amplifier Cover.
19A701365P4
Metal film: 22K ohms ±5%, 1/8 w.
19D902853G9
Lockwasher.
19A702381P522
19B800607P100
UHF FILTER BOARD
N405P5B6
19B800607P223
Coil.
45
19A143832P6
R39
and
R40
19B227929P1
DESCRIPTION
Silicon, NPN: UHF Amplifier; sim to Motorola MRF 650.
R28
and
R29
R38
L3
thru
L6
PART NO.
344A3948P1
Power: 100 ohms ±5%, 40 w.
SYMBOL
Q1
Metal film: 10K ohms ±5%, 1/8 w.
Metal film: 8.2K ohms ±5%, 1/8 w.
DESCRIPTION
LBI-38674F
15
7147306P2
Insulator.
16
19A700136P7
Insulated sleeving.
21
19A701863P27
Clip, loop.
22
19A701312P5
Flatwasher: M3.5.
28
19A702364P316
Machine Screw: Pan Head, Steel.
29
19A700034P4
Nut, hex: No. M3 x 0.5MM.
30
19A700033P5
Lock washer, external tooth: No. 3.
LOW PASS FILTER MODULE
19D902856G3 & G9
ISSUE 2
SYMBOL
PART NO.
REV. A
POWER AMPLIFIER 19D902797G3
POWER AMPLIFIER BOARD 19D902794G3
To make unit ETS compliant.
C17, C44, C45 were 19A702052P33.
C50 was 0.068 µF (19A702052P24).
C61 was 8.2 pF (19A702061P12).
C62 was 27 pF (19A702061P33).
C84 was 1000 pF (19A705108P40).
D1, D2, D3 were (19A700047P3)
L15 thru L17 were (19A700024P37).
L24 was 15nH (19A705470P3).
R33 was 5.6K (19B800607P562).
R34 was 3.9 ohms composition (19A700113P5).
L26 and L27 were removed.
C48, C49, C63, C74 were removed.
C1, (19A702052P26) was added.
C25, C26 (344A3126P38) were added.
R37, R51 (19B801486P331) were added.
R52 (19B801486P100) was added.
Q7 was 19A701940P1.
RT1 (19A705813P2) was added.
VR2 (19A700083P102) was added.
REV. B
POWER AMPLIFIER 19D902797G3
POWER AMPLIFIER BOARD 19D902794G3
To update PWB for new split.
PWB changed
C26 was 100 pF (344A3126P38).
C81 was 100 pF (344A3126P38).
C27 thru C29 added: 8.2 pF (344A3126P11).
C34 and C35 added: 12 pF (344A3126P15).
R36 was 150 ohms (19B801486P151).
R44 thru R46 were 150 ohm (19B801486P151).
R47 and R48 were 39 ohm (19B801486P390).
R32 and R35 added: 2.2 ohm (19A700050P17).
DESCRIPTION
- - - - - - - - - - - - - JACKS - - - - - - - - - - - - -
J1
and
J2
7777145P5
Receptacle: sim to Amphenol 82-97.
- - - - - - - - - - - - - MISCELLANEOUS - - - - - - - - - - - 2
19D903063P1
19D903064P1
Casting.
Casting.
19A702381P513
Screw, thread forming: TORX, No. M3.5 - 0.6 X 13.
19A702364P210
Machine screw, metric: M2.5-.45 x 10.
19A134455P3
Flatwasher.
19A700032P3
Lockwasher, tooth, steel, metric: 2.5.
UHF FILTER BOARD
19D902853G3
- - - - - - - - - - - - - CAPACITORS - - - - - - - - - - - - C1
thru
C3
19A700006P2
Mica: 5.6 pF ±10%, 100 VDCW; sim to Underwood
3HS0020.
C4
19A700006P1
Mica: 4.7 pF ±10%, 100VDCW.
C5
19A700006P2
Mica: 5.6 pF ±10%, 100 VDCW; sim to Underwood
3HS0020.
- - - - - - - - - - - - - INDUCTORS - - - - - - - - - - - - -
L1
and
L2
19C320618P7
Coil.
* COMPONENTS, ADDED, DELETED OR CHANGED BY PRODUCTION CHANGES
LBI-38674F
PRODUCTION CHANGES AND OUTLINE DIAGRAM
PRODUCTION CHANGES - CONT.
REV. C
POWER AMPLIFIER 19D902797G3
POWER AMPLIFIER BOARD 19D902794G3
To update PWB for new band splits.
REV. D
POWER AMPLIFIER 19D902797G3
POWER AMPLIFIER BOARD 19D902794G3
To update PWB for new band splits and add power
monitor circuitry.
Added U2, C48, R54, R53, R55.
REV. A
POWER AMPLIFIER 19D902797G6
To update PWB to new band splits.
REV. A
POWER AMPLIFIER 19D902797G7
POWER AMPLIFIER BOARD 19D902794G7
To update PWB to new band splits and add power
monitor circuitry.
Added U2, C48, R54, R53, R55.
REV. A
POWER AMPLIFIER 19D902797G8, G9, G11
POWER AMPLIFIER BOARD 19D902794G8, G9, G11
REV. B
POWER AMPLIFIER 19D902797G6, G7
POWER AMPLIFIER BOARD 19D902794G6, G7
REV. E
POWER AMPLIFIER 19D902797G3
POWER AMPLIFIER BOARD 19D902794G3
COMPONENT SIDE
To update PWB to new band splits for 492-512 MHz.
REV. B
POWER AMPLIFIER BOARD 19D902797G11
Improve reliability.
C67 was 39 pF (19A700006P50).
(19D902794 Sh. 2, Rev. 14)
POWER AMPLIFIER BOARD A1
19D902856G3, G6, G7, G8, G9, G10 & G11
10
SCHEMATIC DIAGRAM
LBI-38674F
POWER AMPLIFIER ASSEMBLY
19D902797G3, G6, G7, G8, G9, G10 & G11
(19D903622 Sh. 1, Rev. 11)
11
OUTLINE AND SCHEMATIC DIAGRAMS
LBI-38674F
TABLE I
COMPONENT SIDE
REF. DES. 380-400 MHz403-425 MHz 425-450 MHz 450-470 MHz 470-494 MHz 492-512 MHz 410-430 MHz
C27
C28
C29
C30
C31
C32
C33
C34
C35
C36
C58
C65
C66
C67
C68
C69
C87
C88
C89
C90
C91
C92
C93
C94
L2
L3
L5
L6
R32
R35
C37
R53
R50
C41
C46
C47
R58
R59
R49
R37
R51
C84
L1
10.0 pf
15.0 pf
15.0 pf
12.0 pF
12.0 pF
not used
not used
not used
not used
3.9 pF
12.0 pF
not used
47.0 pF
47.0 pF
47.0 pF
47.0 pF
56.0 pF
51.0 pF
51.0 pF
56.0 pF
51.0 pF
51.0 pF
51.0 pF
51.0 pF
BEAD
AIR COIL
BEAD
AIR COIL
not used
not used
2.2 pF
not used
not used
not used
not used
not used
not used
100
330
330
1200 pF
3 turn
12.0 pf
12.0 pf
12.0 pF
not used
not used
not used
not used
15.0 pF
15.0 pF
4.7 pF
12.0 pF
not used
39.0 pF
47.0 pF
39.0 pF
47.0 pF
47.0 pF
51.0 pF
51.0 pF
47.0 pF
47.0 pF
43.0 pF
43.0 pF
47.0 pF
BEAD
AIR COIL
BEAD
AIR COIL
not used
not used
not used
not used
not used
not used
not used
not used
not used
100
330
330
1200 pF
3 turn
10.0 pf
8.2 pf
8.2 pF
not used
not used
not used
not used
15.0 pF
15.0 pF
not used
12.0 pF
not used
39.0 pF
39.0 pF
39.0 pF
39.0 pF
43.0 pF
43.0 pF
43.0 pF
43.0 pF
36.0 pF
39.0 pF
39.0 pF
36.0 pF
BEAD
AIR COIL
BEAD
AIR COIL
not used
not used
not used
not used
not used
not used
not used
not used
not used
100
330
330
1200 pF
3 turn
not used
not used
not used
8.2 pF
8.2 pF
3.3 pF
3.3 pF
not used
not used
not used
8.2 pF
8.2 pF
33.0 pF
36.0 pF
33.0 pF
36.0 pF
39.0 pF
39.0 pF
39.0 pF
39.0 pF
33.0 pF
33.0 pF
33.0 pF
33.0 pF
not used
not used
not used
not used
2.2 pF
2.2 pF
not used
not used
not used
not used
not used
not used
not used
100
330
330
1200 pF
3 turn
not used
not used
not used
8.2 pF
8.2 pF
not used
not used
not used
not used
not used
5.6 pF
4.7 pF
27.0 pF
27.0 pF
27.0 pF
27.0 pF
33.0 pF
33.0 pF
33.0 pF
33.0 pF
33.0 pF
27.0 pF
27.0 pF
33.0 pF
not used
not used
not used
not used
2.2 pF
2.2 pF
not used
not used
not used
8.2 pF
8.2 pF
not used
not used
100
330
330
1200 pF
3 turn
not used
not used
not used
8.2 pF
8.2 pF
not used
not used
not used
not used
not used
5.6 pF
4.7 pF
27.0 pF
27.0 pF
22.0 pF
22.0 pF
33.0 pF
33.0 pF
33.0 pF
33.0 pF
33.0 pF
27.0 pF
27.0 pF
33.0 pF
not used
not used
not used
not used
not used
not used
not used
not used
not used
10.0 pF
10.0 pF
4.7 pF
4.7 pF
not used
not used
not used
not used
1 turn
12.0 pf
10.0 pf
10.0 pf
not used
not used
not used
not used
15.0 pF
15.0 pF
4.7 pF
12.0 pF
not used
39.0 pF
47 pF
39.0 pF
43.0 pF
47.0 pF
51.0 pF
51.0 pF
47.0 pF
43.0 pF
43.0 pF
43.0 pF
43.0 pF
BEAD
AIR COIL
BEAD
AIR COIL
not used
not used
not used
not used
100.0 pF
not used
not used
not used
not used
100
330
1200 pF
1200 pF
3 turn
(19D902853, Sh. 2, Rev. 0)
(19D903638, Component Side, Rev. 0)
SOLDER SIDE
(19D902853, Sh. 2, Rev. 0)
(19D903638, Solder Side, Rev. 0)
POWER AMPLIFIER ASSEMBLY
19D902797G3, G6, G7, G8, G9,G10 & G11
LOW PASS FILTER MODULE
19D902856G3
(19D903622 Sh.2 Rev. 11)
(19D903623 Sh.1, Rev. 1)
12
SCHEMATIC DIAGRAM & IC DATA
U1
19A705457P1, P2 AND P4
PA Amplifier Module
LBI-38674F
U100
19A705532P2
Voltage Regulator
U7
344A3907P1
MMIC Amplifier
U3
19A701789P4
Quad Op-Amp
LOW PASS FILTER MODULE
470 - 512 MHz
19D902856G9
(19B804157, Rev. 0)
13
LBI-38675E
Maintenance Manual
MASTR® III
RF PACKAGE, UHF
380-512 MHz
TABLE OF CONTENTS
TRANSMIT SYNTHESIZER . . . . . . . LBI-38671
RECEIVE SYNTHESIZER . . . . . . . . LBI-38672
RECEIVE RF MODULE . . . . . . . . . . LBI-38673
LBI-39129
IF MODULE . . . . . . . . . . . . . . . . LBI-38643
LBI-39123
POWER AMPLIFIER . . . . . . . . . . . LBI-38674
ericssonz
LBI-38675E
TABLE OF CONTENTS
Page
CONVENTIONAL
OPTIONS AND ACCESSORIES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ADDITIONAL OPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TONE & DC REMOTE CONTROLLED STATIONS . . . . . . . . . . . . . . . . . . . . . . .
REGULATORY DATA
EDACS AND CONVENTIONAL
GENERAL . . . . . . . . . . . . .
TRANSMITTER . . . . . . . . . .
RECEIVER . . . . . . . . . . . .
MODULE NUMBERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ANTENNA SWITCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ILLUSTRATIONS
FIGURE 1 - 69" & 37" CABINET MOUNT . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NOTICE!
This manual covers Ericsson and General Electric products manufactured and sold by Ericsson Inc.
NOTICE!
Repairs to this equipment should be made only by an authorized service technician or facility designated by the supplier.
Any repairs, alterations or substitution of recommended parts made by the user to this equipment not approved by the
manufacturer could void the user’s authority to operate the equipment in addition to the manufacturer’s warranty.
NOTICE!
The software contained in this device is copyrighted by the Ericsson Inc. Unpublished rights are reserved under the
copyright laws of the United States.
This manual is published by Ericsson Inc., without any warranty. Improvements and changes to this manual necessitated
by typographical errors, inaccuracies of current information, or improvements to programs and/or equipment, may be
made by Ericsson Inc., at any time and without notice. Such changes will be incorporated into new editions of this manual.
No part of this manual may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, for any purpose, without the express written permission of Ericsson Inc.
Copyright© July 1992, Ericsson GE Mobile Communications, Inc.
LBI-38675E
CONVENTIONAL OPTIONS and ACCESSORIES
Programmable Options
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Additional Options
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Transmit Frequencies
Receive Frequencies
Channel Spacing
Channel Guard Digital and Tone
Channel Guard Disable
Repeater Disable
Intercom Function
Type 90
DTMF Decode
Morse Code ID
Squelch Tail Elimination (STE)
Carrier Control Timer
Station Control
DC Control
Service Microphone
Antenna Multicoupler
50 Hz Power Supply
Duplexer
Antenna Relay
(VHF/UHF)
Combiner
Isolator
Squelch Operated Relay
Remote Controllers
Battery Standby
(VHF/UHF)
Battery Charger
(VHF/UHF)
Gel Cell Battery
(VHF/UHF)
Voice Guard Encryption
Aegis Digital
Tone Control
Repeater
DC/Repeat
Tone/Repeat
2 or 4 Wire Audio
Scan
CONVENTIONAL TONE & DC REMOTE CONTROLLED STATIONS
AUDIO (Line to Transmitter)
Line Terminating Impedance:
Line Level (Adjustble):
Frequency Response:
600 W
-20 dBm to +7 dBm
± 3 dB @ 300-3000 Hz
TONE CONTROL
Function Tones:
1050,1150,1250,1350,1450,
1550,1650, 1750,1850,1950 & 2050 Hz
2175 Hz
20 dB Below Voice
Secur-it Tone & Transmit Tone:
Transmitted 2175 Hz Tone Level:
Permissible Control Line Loss
@2175 Hz:
30 dB
Continued
LBI-38675E
CONVENTIONAL TONE & DC REMOTE CONTROLLED STATIONS - Cont.
AUDIO (Receiver-to-Line)
Audio Amplifier Input Impedance:
Input Level:
Output Impedance to Line:
Output Level to Line Voice (1 kHz ref):
Tone (1 kHz ref):
Freqency Response:
Hum and Noise, Noise Squelch:
Tone Squelch:
10 KΩ
1 V RMS (For 5 kHz Deviation)
600 Ω
+7 dBm (Adjustable)
+7 dBm (Ref. 7 dBm)
+1 dB and -3dB @ 300-3000 Hz
-55 dB (Ref. 7 dBm)
-30 dB (Ref. 7 dBm)
DC CONTROL Control Control Currents:
Line Loop Resistance (maximum):
-2.5, ± 6 & ± 11 mA
11 KΩ (Includes 3K Termination)
REGULATORY DATA EDACS and CONVENTIONAL
FCC FILING DATA (for cabinet or open rack mounting)
FREQUENCY
BAND
POWER OUTPUT
(Internally Adjustable)
FREQ. STABILITY
AND MODULATION
TYPE
APPLICABLE
TO FCC RULES PART
NUMBERS
FCC
FILLING
NUMBER
403-430
45 to 90 W
(Freq. Mod. PLL Exc.)
1.0 PPM
22,90,80,74
AXATR-307-A
425-450
45 to 90 W
(Freq. Mod. PLL Exc.)
1.0 PPM
22,90,80,74
AXATR-307-A2
450-470
50 to 100W
(Freq. Mod. PLL Exc.)
1.0 PPM
22,90,80,74
AXATR-307-B2
470-494
492-512
45 to 90 W
(Freq. Mod. PLL Exc.)
1.0 PPM
22,90,80,74
AXATR-307-C2
AXATR-307-D2
DOC FILING DATA
FREQUENCY
BAND
TYPE NUMBER
APPLICABLE SPEC
403-430
TR-307
RSS-119
425-450
TR-307
RSS-119
450-470
TR-307
RSS-119
470-494, 492-512
NA
NA
LBI-38675E
GENERAL
INDOOR CABINET (Floor Mount)
CABINET
37" (CNV)
SIZE [in. (mm)]
Height:
Width:
Depth:
Weight (min) [(lb. (Kg)]
Continuous Duty
Packed , Domestic Shipping
69"
37.0 (940)
21.5 (550)
18.25 (460)
69.1 (1750)
23.1 (590)
21 .0 (533)
150 (68)
165 (75)
300 (136)
317 (147)
17
33
Number of Rack Units
Maximum Units w/Power Supply
Maximum Units w/o Power Supply
NOTE: One Rack Unit equals 1.75 inches, Stations occupy 8 rack units of cabinet space.
SERVICE SPEAKER:
1 Watt @ 8Ω
SERVICE MICROPHONE:
Transistorized Dynamic
DC 5A @ 120 VAC or 3A @ 230 VAC
DUTY CYCLE (EIA) Continuous:
Transmit/Receive - 100%
AMBIENT TEMPERATURE:
(or full spec performance per EIA)
-30oC to +60oC
(-22oF to +140oF)
HUMIDITY (EIA):
90% @ 50oC (122oF)
INPUT POWER SOURCE:
Optional:
Standby Battery Source:
120 VAC (± 20%) or
230 VAC (± 15%), 50 Hz
13.8 VDC, 100 AH (min.)
ANTENNA CONNECTIONS:
Type N
LENGTH OF AC POWER CABLE:
10 ft (3048mm)
METERING:
Provided through Handset or
TQ0619 Utility Software.
ALTITUDE
Operable:
Shipable:
Up to 15,000 ft (4,570 m)
Up to 50,000 ft (15,250 m)
SOURCE POWER DRAIN
Frequency Range(MHz)
UHF
380-400
403-430
450-470
470-494
492-512
5A @ 120 VAC or 3A @ 230 VAC
AC Input Power:
DC Input Power:
Tx (full / half power):
Rx only:
Tx (full / half power):
EDACS Applications:
425-450
VDC
13.8
13.8
26.4
13.8
33/25A
2A
33/25A
2A
33/25A
2A
33/25A
2A
33/25A
2A
33/25A
2A
2A
2A
2A
2A
2A
2A
LBI-38675E
TRANSMITTER
UHF
FREQUENCY RANGE
(MHz)
RATED POWER
OUTPUT (Watts):
RF OUTPUT
IMPEDANCE (W):
CONDUCTED SPURIOUS
& HARMONIC
EMISSION (dBm):
FREQUENCY STABILITY
(%):
MODULATION
DEVIATION (kHz):
16F3 & 16F9
20F5Y & 20F9Y
(VHF & UHF)
FM NOISE (dB):
CHANNEL STEPS (kHz)
FREQUENCY SPREAD
Full Spec (MHz)
380-400
403-430
425-450
450-470
470-494
492-512
75
90
90
100
90
90
50
50
50
50
50
50
-36
-36
-36
-36
-36
-36
±0.0001
±0.0001
±0.0001
±0.0001
±0.0001
±0.0001
0 to ± 5
0 to ± 5
0 to ± 5
0 to ± 5
0 to ± 5
0 to ± 5
-55
6.25
-55
6.25
-55
6.25
-55
6.25
-55
6.25
-55
6.25
20
22
25
20
24
20
AUDIO DISTORTION (@ 1 kHz):
Less than 3%
NUMBER OF CHANNELS (Conventional):
up to 16
AUDIO RESPONSE (pre-emphasis):
Within +1 and -3 dB of 6dB/octave,
300 to 3000 Hz per EIA.
NOTE: Rated power output is measured at the transmitter power amplifier output connector per FCC Type Acceptance filling
information. Any customer- required optional items such as power measuring devices and/or duplexers will introduce loss
between the transmitter output connector and the station cabinet output connector. This loss will reduce the available power
at the station connector.
RECEIVER
UHF
FREQUENCY RANGE
(MHz)
RF INPUT
IMPEDANCE (W):
CHANNEL SPACING
(kHz):
SENSITIVITY (dBm)
EIA 12 dB SINAD:
Threshold Squelch (dBm):
SELECTIVITY EIA 2-Signal (dB)
12.5 kHz:
25 kHz:
380-400
403-430
425-450
450-470
470-494
492-512
50
50
50
50
50
50
12.5/25
12.5/25
12.5/25
12.5/25
12.5/25
12.5/25
-115
(0.40 µV)
-116
(0.35 µV)
-116
(0.35 µV)
-116
(0.35 µV)
-116
(0.35 µV)
-116
(0.35 µV)
-118
(0.28 µV)
-119
(0.25 µV)
-119
(0.25 µV)
-119
(0.25 µV)
-119
(0.25 µV)
-119
(0.25 µV)
-80
-90
-80
-90
-80
-90
-80
-90
-80
-90
-80
-90
Continued
LBI-38675E
RECEIVER - Cont.
UHF
FREQUENCY RANGE
(MHz)
380-400
403-430
425-450
450-470
470-494
492-512
FREQUENCY STABILITY
(%):
SIGNAL DISPLACEMENT
BANDWIDTH (kHz):
INTERMODULATION (dB)
12.5 kHz:
25 kHz:
30 kHz:
ETSI
SPURIOUS & IMAGE
REJECTION (dB):
±0.0001
±0.0001
±0.0001
±0.0001
±0.0001
±0.0001
±2
±2
±2
±2
±2
±2
-80
-85
-80
-85
-80
-85
-80
-90
-80
-90
-80
-90
-85
-100
-100
-100
-100
-100
-100
2.0
2.0
2.0
2.0
2.0
2.0
3.0
3.0
3.0
3.0
3.0
3.0
FREQUENCY SPREAD
Full Specs. (MHz):
3 dB Degradation in
Sensitivity (MHz):
AUDIO RESPONSE (de-emphasis):
Within +2 and -8 dB of 6 dB/octave
(@ Local Speaker), 300 to 3000 Hz per EIA.
Within +1 and -3 dB of 6 dB/octave
(@ Line Output), 300 to 3000 Hz per EIA.
AUDIO OUTPUT:
1 Watt at less than 3% distortion @ 1000 Hz,
25 kHz Channel
MODULE NUMBERS
TRANSMIT SYNTHESIZER (450-470 MHz) ........................................ 19D902780G3
(425-450 MHz) ........................................ 19D902780G7
(403-425 MHz, 410-430MHz) ................ 19D902780G6
(380-400 MHz) ........................................ 19D902780G8
(470-494 MHz) ........................................ 19D902780G9
(492-512 MHz) ....................................... 19D902780G10
RECEIVE SYNTHESIZER
(450-470 MHz, 403-425 MHz,
410-430 MHz) .......................................... 19D902781G3
(425-450 MHz, 470-494 MHz)............... 19D902781G7
(380-400 MHz) ........................................ 19D902781G8
(492-512 MHz) ....................................... 19D902781G10
RX FRONT END MODULE (450-470 MHz) ........................................ 19D902782G3
(425-450 MHz) ........................................ 19D902782G7
(403-425 MHz) ........................................ 19D902782G6
(410-430 MHz) ....................................... 19D902782G11
(380-400 MHz) ........................................ 19D902782G8
(470-494 MHz) ........................................ 19D902782G9
(492-512 MHz) ....................................... 19D902782G10
IF MODULE
................................................................... 19D902783G1
(470-494 MHz, 492-512 MHz)............... 19D902783G7
Continued
MODULE NUMBERS - Cont.
POWER AMPLIFIER
(450-470 MHz)......................................... 19D902797G3
(425-450 MHz)......................................... 19D902797G7
(403-425 MHz)......................................... 19D902797G6
(410-430 MHz .........................................19D902797G11
(380-400 MHz)......................................... 19D902797G8
(470-494 MHz)......................................... 19D902780G9
(492-512 MHz)........................................19D902780G10
LOW PASS FILTER
................................................................... 19D902856G1
(470-512 MHz)......................................... 19D902780G9
ANTENNA SWITCH
................................................................... 19B235897P2
DUPLEXER
(440-470 MHz).......................................... 344A4047P1
Fig 1 - 69" & 37" Cabinet Mount
ACCESSORIES
LBI-38675E
ANTENNA SWITCH
19B235897P2
LBI-38675E
Ericsson Inc.
Private Radio Systems
Mountain View Road
Lynchburg, Virginia 24502
1-800-528-7711 (Outside USA, 804-592-7711)
Printed in U.S.A.
LBI-39123E
PRODUCTION CHANGES
MAINTENANCE MANUAL FOR
21.4 MHz RECEIVER IF MODULE
12.5/25 kHz CHANNEL SPACING
19D902783G7 & G11
Changes in the equipment to improve performance or to simplify
circuits are identified by a "Revision Letter" which is stamped after the
model number of the unit. The revision stamped on the unit includes all
previous revisions. Refer to the Parts List for the descriptions of parts
affected by these revisions.
REV. B - RECEIVER IF MODULE 19D902494G7
TABLE OF CONTENTS
DESCRIPTION . . . . . . . . . . . . . . . . .
GENERAL SPECIFICATIONS . . . . . . . . .
BLOCK DIAGRAM . . . . . . . . . . . . . .
CIRCUIT ANALYSIS . . . . . . . . . . . . . .
INPUT MATCHING NETWORK . . . .
CRYSTAL FILTERS, IF AMPLIFIERS .
OSCILLATOR/MIXER/DETECTOR . .
AUDIO AMPLIFIER . . . . . . . . . . .
SQUELCH . . . . . . . . . . . . . . . . .
Buffer Amplifier . . . . . . . . .
Bandpass Filter . . . . . . . . .
Noise Detector . . . . . . . . . .
DC Amplifier . . . . . . . . . .
Schmitt Trigger . . . . . . . . .
FAULT DETECTOR . . . . . . . . . . .
VOLTAGE REGULATOR . . . . . . . .
ADDRESS DECODER . . . . . . . . . .
MAINTENANCE . . . . . . . . . . . . . . . .
RECOMMENDED TEST EQUIPMENT .
ALIGNMENT PROCEDURE . . . . . .
TROUBLESHOOTING . . . . . . . . . .
ASSEMBLY DIAGRAM . . . . . . . . . . . .
OUTLINE DIAGRAM . . . . . . . . . . . . .
SCHEMATIC DIAGRAM . . . . . . . . . . .
IC DATA . . . . . . . . . . . . . . . . . . . . .
PARTS LIST . . . . . . . . . . . . . . . . . . .
PRODUCTION CHANGES . . . . . . . . . .
Page
Front Cover
10
11
Back Cover
DESCRIPTION
• A chain of two crystal filters and an integrated
circuit IF amplifier
The MASTR III Receiver IF Module provides amplification and demodulation of the 21.4 MHz Intermediate
Frequency signal. The IF Module also includes the receiver squelch circuitry. However, it does not include deemphasis or squelch audio gating circuits. Figure 1 is a
block diagram showing the functional operation of the IF
Module.
• An integrated circuit containing a crystal oscillator,
mixer, limiter, and quadrature detector
REV. A - RECEIVER IF MODULE 19D902494G11
To ensure correct operation, U7 (19A701789P4) was replaced.
REV. B - RECEIVER IF MODULE 19D902494G11
To increase margins on squelch threshold sensitivity and 12 dB
SINAD in 12.5 kHz mode. C86 was 0.01 µF (19A702052P14),
R6 was 50 ohms (19B800607P510), R97 was 39 ohms
(19B801251P390) and R98 and R99 were 150 ohms
(19B801251P151). Added L6 (19A705430P24).
• A variable gain AF amplifier
• A squelch circuit
• A fault detector circuit
The IF Module circuitry contains the following:
• An integrated circuit voltage regulator
• A 50 ohm input impedance IF Amplifier
• An address decoder
ERICSSONZ
To improve production of Group 7 boards.
New schematic (193D1065).
Ericsson Inc.
Private Radio Systems
Mountain View Road
Lynchburg, Virginia 24502
1-800-528-7711 (Outside USA, 804-592-7711)
Printed in U.S.A.
LBI-39123E
TABLE 1 - GENERAL SPECIFICATIONS
ITEM
SPECIFICATION
I.F. frequency
21.4 MHz
Input Impedance
50 ohm
l2 dB SINAD
-120 dBm (25 kHz); -119 dBm (12.5 kHz)
Adj. CH SEL
-90 dB (25 kHz); -80 dB (12.5 kHz)
Image
-100 dB
3rd order Intercept Pt
23 dBm (25 kHz); 11 dBm *(12.5 kHz) *@ 50 kHz offset
Variation of Sensitivity with Signal Frequency
2 kHz (25 kHz); 1 kHz (12.5 kHz)
2nd I.F. frequency
455 kHz
2nd L.O. frequency
20.945 MHz
AF output (J2 pin 31C)
1 Vrms adjustable (with standard input signal)
AF output impedance
1k ohm
AF distortion
5% (25 kHz); 5% (12.5 kHz)
AF response
CIRCUIT ANALYSIS
INPUT AMPLIFIER NETWORK
The input amplifier, consisting of Q2 and T1, provides a
50 ohm load for the receiver RF module.
Capacitor C1 provides AC coupling and a DC block on
the input line (J1). This DC block protects the module in the
event of a failure in a preceding module.
C1 and L9 are series-resonant at 21.4 MHz and provide a
low-impedance path from J1 to amplifier Q2. C89 and L8
are parallel-resonant at 21.4 MHz and provide a path to the
50-ohm lead, R105, for mixer products other than 21.4
MHz.
CRYSTAL FILTERS, IF AMPLIFIERS
Y1, Y2, U1, and associated circuitry provide IF filtering
and amplification at 21.4 MHz. Filters Y1 and Y2 are both 4pole bandpass filters with a center frequency of 21.4 MHz
and a bandwidth of ±6.5 kHz. Amplifier UI is an integratedcircuit amplifier. U1 provides 30 dB of gain. The amplifier
and filters have terminal impedances of 50 ohms. In-circuit
gain measurements can be made using a high impedance
probe.
10 Hz
-3 dB
300 Hz
±1 dB
1000 Hz
0 dB reference
3 kHz
±1 dB
Hum & Noise
-55 dB (25 kHz); -50 dB (12.5 kHz)
RSSI output (J2 pin 20C)
0.7 to 2.7 Vdc prop to log (sig level)
RSSI time constant
5 ms
SQ Threshold Sensitivity
-123 dBm (25 kHz); -122 dBm (12.5 kHz)
SQ Maximum Sensitivity
-110 dBm (25 kHz); -109 dBm (12.5 kHz)
SQ Clipping
3 kHz
The RF level detector consists of transistor Q1 along
with associated resistors and capacitors. This detector plays
no role in the normal operation of the IF Module, but aids in
unit testing and module troubleshooting.
SQ Attack
150 ms
OSCILLATOR/MIXER/DETECTOR
SQ Close
250 ms
SQ output (J2 pin 26C)
5V logic (low = squelched)
Fault output (J2 pin IIC)
5V logic (low = fault)
DC Supply
13.8V, 150 mA max.; 12.0V, 18 mA max.
This manual is published by Ericsson Inc., without any warranty. Improvements and changes to this manual necessitated by typographical errors,
inaccuracies of current information, or improvements to programs and/or equipment, may be made by Ericsson Inc., at any time and without notice. Such changes will be incorporated into new editions of this manual. No part of this manual may be reproduced or transmitted in any form or
by any means, electronic or mechanical, including photocopying and recording, for any purpose, without the express written permission of
Ericsson Inc.
Inductors L3, L5 and associated resistors and capacitors
provide power supply decoupling. R3 provides a path to the
input of the Fault Detector circuit. This input enables the
Fault Detector circuit to monitor the DC voltage of U1.
Integrated circuit U3 provides several functions including 2nd mixer, if amplifier and limiter, and quadrature detector.
The 20.945 MHz crystal oscillator provides local oscillator injection to the mixer in U3. This mixer converts the 21.4
MHz IF signal to 455 kHz. C20 and C21 are oscillator feedback capacitors and have been chosen to provide the proper
capacitance for crystal Y3. The proper oscillator output level
is difficult to measure directly without affecting the oscillation.
A preferable measurement is at TP3 which should read
about 10 mV pk. (Measured using a 10 megohm 11 pF oscilloscope probe.)
The mixer is internally connected to the crystal oscillator.
Pins 1 and 20 of U3 are the mixer input and output respectively. Typical mixer conversion loss is about 2 dB.
In the 12.5 kHz mode, the output of the mixer drives the
IF amplifier via analog switch U11-2, filter FL1 and analog
switch U11-3. In the 25 kHz mode, the mixer output is
routed through analog switch U11-1 and C85 to the IF amplifier. The analog switches are controlled by the signal at
point ’A’; high for 25 kHz, low for 12.5 kHz.
The IF amplifier output drives the limiter via the 6-pole
ceramic filter FL2.
A received-signal-strength indicator (RSSI) is provided
at U3 Pin 7. This indicator signal is generated within the
limiter circuitry and provides an output current proportional
to the logarithm of the input signal strength. This current develops a voltage across R18. The voltage varies from about 1
Vdc for noise input, to about 1.4 Vdc for a 12 dB SINAD
signal, to a maximum of about 4.8 Vdc for a high signal
level (70 dB stronger than that required for 12 dB SINAD).
The quadrature detector provides a demodulated audio
frequency output. The input to the detector is internally connected to the limiter and is not externally available. The output of the detector is U3 pin 9. C28 provides low-pass
filtering to remove 455 kHz feedthrough. Ceramic resonator
Y4 provides the frequency selective component needed for
FM demodulation. Y4 replaces the typical LC resonant circuit found in most quadrature detectors. In contrast to the
typical LC network, Y4 requires no adjustment.
The DC supply to U3 is provided through voltage dropping resistor R11 to U3 pin 6. R12 provides a path to the input of the Fault Detection circuit. This enables the Fault
Detector to monitor the DC voltage on U3.
AUDIO AMPLIFIER
Operational amplifier U6.3 provides audio frequency
amplification. Its gain is set by its associated resistors, including variable resistor VR1. VR1 allows for adjusting the
AF output level to 1 Vrms with a standard input signal to the
module (1 kHz AF, 3 kHz peak deviation). In the 12.5 kHz
mode, the demodulated audio is at a lower level than in the
25 kHz mode. The gain of amplifier U6.3 is, therefore, increased to give the same 1V rms output with a standard input
signal to the module of 1.5 kHz deviation. This is done by
transistor switch Q6 connecting R1 across R40. U6.2 is
used as a voltage regulator to provide 4 Vdc for biasing the
operational amplifier.
Copyright© November 1994, Ericsson GE Mobile Communications Inc.
LBI-39123E
SQUELCH
Buffer Amplifier
Integrated circuit U6.4 is configured as a unity gain buffer
amplifier. It provides a high input impedance to minimize loading of the previous circuits.
Bandpass Filter
The audio frequency bandpass filter consists of U7.1 and its
associated circuitry. The purpose of this filter is to reject all
voice frequencies and allow only demodulated noise to pass.
The functioning of the squelch circuit depends upon the presence or absence of this noise. (When a signal is being received,
i.e. the receiver is quiet, the squelch circuit senses the absence
of noise and unsquelches the radio.)
Noise Detector
U7.2 along with associated components act as a noise detector. The rectified output of U7.2 charges C11/C44 to a
nearly constant DC voltage.
DC Amplifier
U7.3 is configured as a basic amplifier with a gain of 3.
Schmitt Trigger
Transistors Q4 and Q5 are drivers for the front panel LED
CRI. These are powered from the +13.8 Vdc line before the 8V
regulator. Therefore, if the regulator opens, a fault will still be
indicated.
VOLTAGE REGULATOR
U8 is a monolithic integrated-circuit voltage regulator providing 8 Vdc. This powers all circuitry in the module with the
exception of Q2, the front panel LED and its drivers.
ADDRESS DECODER
The address decoder consists of U2, an 8-stage shift register, and U9, a BCD-to-decimal decoder. When A2, A1 and A0
are ’1’, ’1’, ’0’, respectively and the ENABLE line is high, Q7
on U9 goes high. This enables data input to U2 to propagate
through it, controlled by the clock pulses on U2-3. When the
ENABLE signal goes low, U9-4 goes low, and the shift-register
outputs are latched. Q1 on U2 is then high for the 12.5 kHz
mode, and low for the 25 kHz mode.
MAINTENANCE
RECOMMENDED TEST EQUIPMENT
The following test equipment is required to test the IF
Module.
1. FM Signal Generator; HP 8640B, HP 8657A, or
equivalent
2. AF Generator or Function Generator
U7.4 is configured as an amplifier with positive feedback.
This arrangement provides hysteresis in the output versus input
characteristic. This eliminates the possibility of the squelch circuit repeatedly cutting in and out when the input signal is near
a threshold. R56 and R57 act as a voltage divider to provide a 5
volt logic level output. (Logic High = unsquelched)
5. Frequency Counter; Racal-Dana 9919 or equivalent
6. DC Meter for troubleshooting
7. Power Supply; 13.8 Vdc @ 150 mA
U4 and U5 are voltage comparators. These are configured
into four "window detectors" which sense the presence of voltages within specified ranges (windows).
8 Power Supply; 12 Vdc @20 mA
Diode D1 and transistor Q3 monitor the output of the 8V
regulator. DI is a 8.2 volt breakdown diode. If the regulator
output voltage should rise above 8.9 V (8.2 + 0.7 base-emitter
drop) Q1will turn on and a fault will be indicated.
4. Oscilloscope
FAULT DETECTOR
The four window detector circuits are U4.1 & U4.2, U4.4
& U4.3, U5.1 & U5.2, and U5.4 & U5.3. These monitor DC
operating voltages on U6.2, U1, Q2, and U3 respectively. R29
and R30 comprise a voltage divider to provide a 5 volt logic
level output. A fault is indicated when the output drops to zero.
21.4 MHz IF MODULE - BLOCK DIAGRAM
3. Audio Analyzer; HP 8903B, HP 339A, or equivalent
ALIGNMENT PROCEDURE
1. Apply 13.8 Vdc and 12 Vdc supplies to module.
2. Verify 13.8 V DC current consumption is between 90
and 150 mA, and 12 Vdc current is between 12 and 18
mA.
3. Verify fault output is 0 to 0.5 Vdc and front panel LED
is off.
ASSEMBLY DIAGRAM
4. Apply a standard input signal to the module input. (-60
dBm, 21.4 MHz signal modulated with 1 kHz AF, 3
kHz peak deviation)
5. Monitor TP5 with a high-impedance probe connected to
the frequency counter. Adjust L10 for a reading of 455
kHz ± 100 Hz.
LBI-39123E
IF amplifier Q2 has a nominal 8 dB gain. U1 has a nominal
gain of 30 dB. The mixer has about 2 dB loss with proper LO
injection. The proper crystal oscillator level is 10 mV pk measured at TP3.
The following four test points are provided on the PWB for
additional test capability:
6. Set VRI for 1 Vrms ±3% at module output (pin 31C on
96 pin connector J2).
TP1: 60 mV pk @ 21.4 MHz with -30 dBm input signal
TROUBLESHOOTING
TP3: 10 mV pk @ 20.945 MHz independent of input signal
When troubleshooting the module, it is most convenient if
the standard test fixture is used. The following conditions are
with the module in the 25 kHz mode. This can be set up using
a PC with the necessary software connected to the test fixture.
Alternatively, a wire link can be soldered between holes H1
and H2 on the PC board.
TP4: 20 mV pk @ 455 kHz with -60 dBm input signal
TP5: 750 mV pk @ 455 kHz with -60 dbm input signal
All RF voltages measured with 10 Megohm, 11 pF probe.
TROUBLE SHOOTING GUIDE
SYMPTOM
CHECK
(CORRECT READING SHOWN)
INCORRECT READING
INDICATES DEFECTIVE
COMPONENT
Fault indicator on
Check DC voltages
+8V at U8 Pin 1
+4v at U6 Pin 7
5.5V at U1 output pin
6V at U3 Pin 5
If DC voltages not correct
U8 or associated components
U6 or associated components
U1 or associated components
U3 or associated components
If DC voltages correct
U4, U5, U6, DI, Q3, Q4, Q5
No audio - no noise
With no signal applied to module IF input
Check for AF noise @ C29 ; 200mV
Check for AF noise @ U6 Pin 14:1 V
U3 or associated components
U6 or associated components
Noise only - no
demodulated audio
Check crystal oscillator: TP3 10 mVpk 20.945 MHz
U3, Y3 or associated components
Apply-30 dBm 21.4 MHz input, check TPl 60 mVpk
Apply-60 dBm 21.4 MHz input, check TP4 20 mVpk
Q2, Y1, U1 or associated components
U3, FL1 or associated components
Check crystal oscillator: TP3 10 mVpk 20.945 MHz
U3, Y3 or associated components
Apply-30 dBm 21.4 MHz input, check TP1 60 mVpk
Apply-60 dBm 21.4 MHz input, check TP4 20 mVpk
Q6, Y1, U1 or associated components
U3, FL1 or associated components
With squelch pot maximum, or with module AUDIO/
SQUELCH/HI connected to SQUELCH/ARM input
and with no signal to module IF input:
Check Presence of 1 Vpk noise at U6 Pin 14
U6 or associated components
Check presence of 1 Vpk noise U7 at Pin 1
Check DC voltage U7 at Pin 8: 7V
Check DC voltage U7 at Pin 14: 0.5V
U7 or associated components
Poor 12 dB SINAD
No squelch
function
RECEIVER IF MODULE
19D902783G7, G11
(19D902783, Sh. 1, Rev. 3)
LBI-39123E
OUTLINE DIAGRAM
RECEIVER IF MODULE (EARLIER VERSION)
RECEIVER IF MODULE
(19D902494, Sh.3, Rev. 6)
(19D902494, Sh.4, Rev. 6)
19D902494G7, G11
19D902494G7 & G11
SCHEMATIC DIAGRAM
LBI-39123E
RECEIVER IF MODULE (EARLIER VERSION)
19D902494G7, G11
(188D5586, Sh. 1, Rev. 3)
LBI-39123E
RECEIVER IF MODULE (EARLIER VERSION)
19D902494G7, G11
(188D5586, Sh. 2, Rev. 3)
SCHEMATIC DIAGRAM
SCHEMATIC DIAGRAM
LBI-39123E
RECEIVER IF MODULE
19D902494G7 & G11
(193D1065, Sh. 1, Rev. 3)
LBI-39123E
RECEIVER IF MODULE
19D902494G7 & G11
(193D1065, Sh. 2, Rev. 3)
SCHEMATIC DIAGRAM
SCHEMATIC DIAGRAM
LBI-39123E
RECEIVER IF MODULE
19D902494G7 & G11
(193D1065, Sh. 3, Rev. 3)
LBI-39123E
U1
344A3740P1
Silicon Bipolar IC
IC DATA
U4 & U5
19A704125P1
kQuad Comparator
U6 & U7
19A701789P4
Quad Op-Amp
U11
RYT3066018/C
Bilateral Switch
U3
19A705535P3
FM Receiver
10
U8
19A704971P10
Voltage Regulator
LBI-39123E
PARTS LIST
RECEIVER IF MODULE
19D902783G7, G11
ISSUE 5
SYMBOL
PART NUMBER
DESCRIPTION
SYMBOL
PART NUMBER
DESCRIPTION
C45
thru
C47
19A702052P14
Ceramic: 0.01 µF ±10%, 50 VDCW.
C48
19A702236 P50
Ceramic: 10 0 pF ±5%, 50 VDCW, temp coef 0 ±30
PPM/°C.
SYMBOL PART NUMBER
DESCRIPTION
- - - - - - - - - - TRANSISTORS - - - - - - - - -
R62
19B800607P102
Metal film: 1K ohms ±5%, 1/8 w.
R63
19B800607P332
Metal film: 3.3K ohms ±5%, 1/8 w.
R64
thru
R66
19B800607P102
Metal film: 1K ohms ±5%, 1/8 w.
R67
19B800607P104
Metal film: 100K ohms ±5%, 1/8 w.
R68
19B800607P102
Metal film: 1K ohms ±5%, 1/8 w.
Metal filter: 2.7 K ohms ±5%, 1/8 w. (Used in G11).
R69
19B800607P101
Metal film: 100 ohms ±5%, 1/8 w.
19B800607P102
Metal film: 1K ohms ±5%, 1/8 w.
Metal film: 3.3K ohms ±5%, 1/8 w.
Q1
and
Q2
19A704708P2
Silicon, NPN: sim to NEC 2SC3356.
Q3
thru
Q9
19A700076P2
Silicon, NPN: sim to MMBT3904, low profile.
R1
19B800607P562
Metal filter: 5.6 K ohms ±5%, 1/8 w. (Used in G7).
R1
19B800607P272
Ceramic: 0.01 µF ±10%, 50 VDCW.
- - - - - - - MISCELLANEOUS - - - - - - - - -
C50
19A702236P50
Ceramic: 10 0 pF ±5%, 50 VDCW, temp coef 0 ±30
PPM/°C.
C51
and
C52
19A702052P14
Ceramic: 0.01µF±10%, 50 VDCW.
C53
19A705205P12
Tantalum: .33 µF, 16 VDCW; sim to Sprague 293D.
R2
19B800607P332
Metal film: 3.3K ohms ±5%, 1/8 w.
C54
and
C55
19A702052P14
Ceramic: 0.01 µF ±10%, 50 VDCW.
R3
19B800607P103
Metal film: 10K ohms ±5%, 1/8 w.
R70
thru
R74
R4
19B800607P102
Metal film: 1K ohms ±5%, 1/8 w.
R75
19B800607P332
C56
19A702236P50
Ceramic: 100 pF ±5%, 50 VDCW, temp coef 0+ or -30
PPM/°C.
R5
19B800607P103
Metal film: 10K ohms ±5%, 1/8 w.
R76
19B800607P820
Metal film: 82 ohms ±5%, 1/8 w.
R6
19B800607P510
Metal film: 51 ohms ±5%, 1/8 w. (Used in G7).
R77
19B800607P102
Metal film: 1K ohms ±5%, 1/8 w.
Ceramic: 0.01 µF±10%, 50 VDCW.
R6
19B800607P221
Metal film: 220 ohms ±5%, 1/8 w. (Used in G11).
R78
19B800607P392
Metal film: 3.9K ohms ±5%, 1/8 w.
R7
19B800607P102
Metal film: 1K ohms ±5%, 1/8 w.
R79
19B800607P272
Metal film: 2.7K ohms ±5%, 1/8 w.
R80
and
R81
19B800607P682
Metal film: 6.8K ohms ±5%, 1/8 w.
19D902509P1
Cover.
19D902555P1
Handle.
19A702381P506
Screw, thread forming:
TORX, No. M3.5-.6 x 6.
19A702381P513
Screw, thread forming:
TORX, No. M3.5 - 0.6 X 13.
19B235310P1
Nameplate.
11
19A702381P508
Screw, thd. form: No. 3.5-0.6 x 8.
19
19A149009P1
Pad.
- - - - - - - - - - RESISTORS - - - - - - - - - -
C57
and
C58
19A702052P14
19D902494G7 & G11
C59
19A702052P5
Ceramic: 1000 pF ±10%, 50 VDCW.
R8
19B800607P103
Metal film: 10K ohms ±5%, 1/8 w.
- - - - - - - - - - CAPACITORS - - - - - - -
C60
19A702052P14
Ceramic: 0.01 µF ±10%, 50 VDCW.
R9
19B800607P821
Metal film: 820 ohms ±5%, 1/8 w.
C61
19A702052P5
Ceramic: 1000 pF ±10%, 50 VDCW.
R10
19B800607P101
Metal film: 100 ohms ±5%, 1/8 w.
19A702052P14
Ceramic: 0.01 µF ±10%, 50 VDCW.
R11
19B800607P331
Metal film: 330 ohms ±5%, 1/8 w.
C1
19A702236P52
C2
19A702052P5
Ceramic: 120 pF ±5%, 50 VDCW, temp coef 0 ±30
PPM/°C.
Ceramic: 1000 pF ±10%, 50 VDCW.
C3
19A702052P22
Ceramic: 0.047 µF ±10%, 50 VDCW.
C62
thru
C67
R12
19B800607P103
Metal film: 10K ohms ±5%, 1/8 w.
C4
19A702052P14
Ceramic: 0.01 µF ±10%, 50 VDCW.
C68
19A702052P5
Ceramic: 1000 pF ±10%, 50 VDCW.
R13
19B800607P104
Metal film: 100K ohms ±5%, 1/8 w.
C5
thru
C7
19A702052P26
Ceramic: 0.1+ or µF ±10%, 50 VDCW.
C69
and
C70
19A702052P14
Ceramic: 0.01 µF ±10%, 50 VDCW.
R14
19B800607P103
Metal film: 10K ohms ±5%, 1/8 w.
R15
19B800607P223
Metal film: 22K ohms ±5%, 1/8 w.
C8
and
C9
19A702052P14
C71
19A702052P33
Ceramic: 0.1 µF ±10%, 50 VDCW.
R16
19B800607P103
Metal film: 10 ohms ±5%, 1/8 w.
C72
19A702236P50
R17
19A702931P261
Metal film: 4220 ohms ±1%, 200 VDCW, 1/8 w.
C10
19A702052P5
Ceramic: 1000 pF ±10%, 50 VDCW.
Ceramic: 100 pF ±5%, 50 VDCW, temp coef 0 ±30
PPM/°C.
R18
19A702931P401
Metal film: 100K ohms ±1%, 200 VDCW, 1/8 w.
C11
19A702052P26
Ceramic: 0.1µF ±10%, 50 VDCW.
19A702236P50
Ceramic: 10 0 pF ±5%, 50 VDCW, temp coef 0 ±30
PPM/°C.
R19
19B800607P101
Metal film: 100 ohms ±5%, 1/8 w.
C12
19A705205P12
Tantalum: .33 µF, 16 VDCW; sim to Sprague 293D.
C73
and
C74
R20
19B800607P100
Metal film: 10 ohms ±5%, 1/8 w.
19A702052P14
Ceramic: 0.01 µF ±10%, 50 VDCW.
19B800607P472
Metal film: 4.7K ohms ±5%, 1/8 w.
Ceramic: 0.01 µF ±10%, 50 VDCW.
C13
19A702236P50
Ceramic: 100 pF ±5%, 50 VDCW, temp coef 0 ±30
PPM/°C.
C75
C76
19A705205P15
Tantalum: 33 µF, 16 VDCW; sim to Sprague 293D.
R21
and
R22
C14
and
C15
19A702052P14
Ceramic: 0.01 µF ±10%, 50 VDCW.
C77
and
C78
19A702052P33
Ceramic: 0.1µF ±10%, 50 VDCW.
R23
19B800607P821
Metal film: 820 ohms ±5%, 1/8 w.
R24
19B800607P102
Metal film: 1K ohms ±5%, 1/8 w.
C16
19A702236P50
Ceramic: 100 pF ±5%, 50 VDCW, temp coef 0 ±30
PPM/°C.
Ceramic: 0.1µF ±10%, 50 VDCW.
C17
and
C18
19A702052P26
C19
19A702052P5
Ceramic: 1000 pF ±10%, 50 VDCW.
C20
19A702236P44
Ceramic: 56 pF ±10%, 50 VDCW, temp coef 0 ±30
PPM/°C.
C79
19A702052P14
Ceramic: 0.01 µF ±10%, 50 VDCW.
R25
19B800607P392
Metal film: 3.9K ohms ±5%, 1/8 w.
C80
thru
C83
19A702236P50
Ceramic: 10 0 pF ±5%, 50 VDCW, temp coef 0 ±30
PPM/°C.
R26
19B800607P272
Metal film: 2.7K ohms ±5%, 1/8 w.
R27
19B800607P102
Metal film: 1K ohms ±5%, 1/8 w.
C84
19A705052P2
Tantalum: .1 µF, 16 VDCW; sim to Sprague 293D.
R28
19B800607P272
Metal film: 2.7K ohms ±5%, 1/8 w.
C85
19A702052P5
Ceramic: 10 00 pF ±10%, 50 VDCW.
R29
19B800607P822
Metal film: 8.2K ohms ±5%, 1/8 w.
19B800607P153
Metal film: 15K ohms ±5%, 1/8 w.
Metal film: 10K ohms ±5%, 1/8 w.
Metal film: 47K ohms ±5%, 1/8 w.
R85
19B800607P393
Metal film: 39K ohms ±5%, 1/8 w.
R86
19B800607P103
Metal film: 10K ohms ±5%, 1/8 w.
R87
19B800607P273
Metal film: 27K ohms ±5%, 1/8 w.
R88
thru
R93
19B800607P102
Metal film: 1K ohms ±5%, 1/8 w.
R94
19B800607P473
Metal film: 47K ohms ±5%, 1/8 w.
R95
19B800607P393
Metal film: 39K ohms ±5%, 1/8 w.
R96
19B800607P473
Metal film: 47K ohms ±5%, 1/8 w.
R97
19B801251P390
Metal film: 39 ohms ±5%, 1/10 w. (Used in G7).
R97
19B801251P180
Metal film: 18 ohms ±5%, 1/10 w. (Used in G11)
R98
and
R99
19B801251P151
Metal film: 150 ohms ±5%, 1/10 w. (Used in G7).
R98
and
R99
19B801251P271
Metal film: 270 ohms ±5%, 1/10 w. (Used in G11).
R100
19B800607P103
Metal film: 10K ohms ±5%, 1/8 w.
R101
19B800607P100
Metal film: 10 ohms ±5%, 1/8 w.
R103
19B800607P473
Metal film: 47K ohms ±5%, 1/8 w.
R105
19B800607P510
Metal film: 51 ohms ±5%, 1/8 w.
19A702052P14
Ceramic: 0.01 µF ±10%, 50 VDCW. (Used in G7).
Ceramic: 150 pF ±10%, 50 VDCW, temp coef 0 ±30
PPM/°C.
C86
19A702236P48
Ceramic: 82 pF ±5%, 50 VDCW, temp coef 0 ±30
PPM/°C. (Used in G11).
R31
19B800607P103
Metal film: 10K ohms ±5%, 1/8 w.
R32
and
R33
19B800607P104
Metal film: 100K ohms ±5%, 1/8 w.
R106
19B800607P103
Metal film: 10K ohms ±5%, 1/8 w.
R34
19B800607P153
Metal film: 15K ohms ±5%, 1/8 w.
TP5
344A3367P1
Test Point.
R35
19B800607P122
Metal film: 1.2K ohms ±5%, 1/8 w.
R36
and
R37
19B800607P104
Metal film: 100K ohms ±5%, 1/8 w.
T1
REGUA10003/1
Transformer.
U1
344A3740P1
Linear: Amp; sim to INA-02186.
U2
19A703987P324
8-Bit 3-State Shift Latch Register CMOS
U3
19A705535P3
Linear: RF/IF Signal Processor; sim to SA605N.
U4
and
U5
19A704125P1
Linear: Quad Comparator; sim to LM339D.
U6
19A701789P4
Linear: Quad Op Amp; sim to LM224D.
U7
19A701789P5
Linear.
U8
19A704971P10
Linear: 8V; Voltage Regulator.
U9
344A3064P201
Digital: 3-To-8 Line Decoder/Demultiplexer; sim to
74HCT138.
Voltage Regulator: +5V.
Ceramic: 1 pF ±0.5% pF, 50 VDCW.
C87
19A702052P5
Ceramic: 1000 pF ±10%, 50 VDCW.
C23
thru
C25
19A702052P26
Ceramic: 0.1µF ±10%, 50 VDCW.
C89
19A702236P52
Ceramic: 120 pF ±5%, 50 VDCW, temp coef 0 ±30
PPM/°C.
Ceramic: 27 pF ±5%, 50 VDCW, temp coef 0 ±30
PPM/°C.
C27
19A702052P26
Ceramic: 0.1µF ±10%, 50 VDCW.
C28
19A702236P50
Ceramic: 100 pF ±5%, 50 VDCW, temp coef 0 ±30
PPM/°C.
19A705205P5
19B800607P103
19B800607P473
C86
19A702061P1
C29
R82
R83
and
R84
R30
C22
19A702061P33
DESCRIPTION
Metal film: 47K ohms ±5%, 1/8 w.
19A702052P14
Chassis.
C26
PART NUMBER
19B800607P473
C49
19D902508P1
19A702236P54
R61
19D902783G7
C21
SYMBOL
- - - - - - - - - - - DIODES - - - - - - - - - CR1
19A703595P10
- - - - - - - - - - - DIODES - - - - - - - - - D1
19A700083P105
Silicon: Zener; 8.2 Volt.
R38
19B800607P102
Metal film: 1K ohms ±5%, 1/8 w.
D2
19A700155P2
Silicon: 100 mA, 35 PIV; sim to BAT 18.
R39
19B800607P104
Metal film: 100K ohms ±5%, 1/8 w.
R40
19B800607P332
Metal film: 3.3K ohms ±5%, 1/8 w.
Bandpass Filter: 455 ± 0.5 kHz, sim to Murata
CFU455F2.
R41
19B800607P123
Metal film: 12K ohms ±5%, 1/8 w.
R42
19B800607P104
Metal film: 100K ohms ±5%, 1/8 w.
- - - - - - - - - - - JACKS - - - - - - - - - - -
R43
19B800607P102
Metal film: 1K ohms ±5%, 1/8 w.
19B800607P682
Metal film: 6.8K ohms ±5%, 1/8 w.
Tantalum: 6.8 µF, 10 VDCW; sim to Sprague 293D.
C30
19A705205P2
Tantalum: 1 µF, 16 VDCW; sim to Sprague 293D.
C31
19A705205P12
Tantalum: .33 µF, 16 VDCW; sim to Sprague 293D.
C32
thru
C34
19A702052P26
Ceramic: 0.1µF ±10%, 50 VDCW.
C35
19A705205P2
Tantalum: 1 µF, 16 VDCW; sim to Sprague 293D.
C36
19A705205P5
Tantalum: 6.8 µF, 10 VDCW; sim to Sprague 293D.
C37
19A705205P2
Tantalum: 1 µF, 16 VDCW; sim to Sprague 293D.
C38
and
C39
19A702052P10
Ceramic: 4700 pF ±10%, 50 VDCW.
C40
19A702236P50
Ceramic: 10 0 pF ±5%, 50 VDCW, temp coef 0 ±30
PPM/°C.
Optoelectric: Red LED; sim to HP HLMP-1301-010.
- - - - - - - - - - - FILTERS - - - - - - - - - FL1
and
FL2
19A702171P2
J1
19A115938P24
Coaxial Connector.
R44
J2
19B801587P7
Connector, DIN: 96 male contacts, right angle
mounting; sim to AMP 650887-1.
R45
19B800607P333
Metal film: 33K ohms ±5%, 1/8 w.
R46
19B800607P104
Metal film: 100K ohms ±5%, 1/8 w.
- - - - - - - - - TRANSFORMERS - - - - - - - - - - - - - - INTEGRATED CIRCUITS - - - - - -
R47
19B800607P563
U10
19A704971P9
19A705470P28
Coil: 1.8 µH, ±20%; sim to Toko 380LB-1R8M.
Metal film: 56K ohms ±5%, 1/8 w.
L1
R48
19B800607P822
U11
RYT3066018/C
Switch, Bilateral: CMOS QUAD.
L2
and
L3
19A705470P35
Coil: 6.8 µH, ±20%; sim to Toko 380LB-6R8M.
Metal film: 8.2K ohms ±5%, 1/8 w.
R49
19B800607P103
Metal film: 10K ohms ±5%, 1/8 w.
U12
19A703483P311
R50
19B800607P104
L5
19A705470P35
Coil: 6.8 µH ±20%; sim to Toko 380LB-6R8M.
Metal film: 100K ohms ±5%, 1/8 w.
Digital: CMOS Quad-Input OR Gate; sim to
74HC32. (Used in G11).
R51
19B800607P334
Metal film: 330K ohms ±5%, 1/8 w.
VR1
19B800779P12
Resistor, variable.
Y1
19A149974G7
Filter, Crystal: 21.4 MHz.
Y2
19A149974G8
Filter, Crystal: 21.4 MHz.
Y3
19A702289G8
Crystal: 20.945 MHz.
Y4
19A149976P1
Discriminator: 455 kHz.
- - - - - - - - - - INDUCTORS - - - - - - - - - -
C41
19A702052P22
Ceramic: 0.047 µF ±10%, 50 VDCW.
L6
19A705470P24
C42
and
C43
19A702061P77
Ceramic: 470 pF ±5%, 50 VDCW, temp coef 0 ±30
PPM.
Coil: 0.82 µH, ±20%; sim to Toko 380NB-R82M. (Used
in G11).
L7
19A705470P35
Coil: 6.8 µH ±20%; sim to Toko 380LB-6R8M.
C44
19A702052P26
L8
and
L9
19A705470P21
Coil, RF: 0.47 µH, ±20%; sim to Toko 380NB-R42M.
L10
19A703311P1
Ceramic: 0.1µF ±10%, 50 VDCW.
- - -- - - - - - - - TEST POINT - - - - - - - - - - -
Coil, RF: sim to Toko American KON-K6572BA.
R52
19B800607P103
Metal film: 10K ohms ±5%, 1/8 w.
R53
and
R54
19B800607P223
Metal film: 22K ohms ±5%, 1/8 w.
R55
19B800607P683
Metal film: 68K ohms ±5%, 1/8 w.
R56
19B800607P181
Metal film: 180 ohms ±5%, 1/8 w.
R57
19B800607P821
Metal film: 820 ohms ±5%, 1/8 w.
- - - - - VARIABLE RESISTOR - - - - - - - - - - - - - - - - - CRYSTALS - - - - - - - - -
*COMPONENTS ADDED, DELETED OR CHANGED BY PRODUCTION CHANGES
11
LBI-39129B
MAINTENANCE MANUAL FOR
RECEIVER FRONT END MODULE
19D902782G6, G8, G9, G10, G11, G12
TABLE OF CONTENTS
Page
DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Front
Cover
SPECIFICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CIRCUIT ANALYSIS
PRESELECTOR FILTER . . .
PREAMPLIFIER . . . . . . . .
IMAGE REJECTION FILTER .
INJECTION AMPLIFIER . . .
INJECTION FILTER . . . . . .
DOUBLE BALANCE MIXER
FAULT DETECTION . . . . .
MAINTENANCE
TEST PROCEDURE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ALIGNMENT PROCEDURE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TROUBLESHOOTING PROCEDURE . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BLOCK DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TABLE 2 - RETUNING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PARTS LIST . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PRODUCTION CHANGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
OUTLINE DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ASSEMBLY DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SCHEMATIC DIAGRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DESCRIPTION
The Receiver Front End (RXFE) Module amplifies
and converts the RF signal to the first IF at 21.4 MHz.
This is a down conversion process using low side (G9,
G10) or high side (G6, G8, G11, G12) injection. The
RXFE module is powered by a regulated 12 volts. The
RXFE printed wiring board contains the following functional circuits:
•
Preselector Filter
ERICSSONZ
•
•
•
•
•
•
Preamplifier
Image Rejection Filter
Injection Amplifier
Injection Filter
Double Balanced Mixer
Fault Detector
All but the Fault Detector circuit in the RXFE
module have 50 ohm impedance terminations.
Ericsson Inc.
Private Radio Systems
Mountain View Road
Lynchburg, Virginia 24502
1-800-528-7711 (Outside USA, 804-528-7711)
Printed in U.S.A.
LBI-39129B
Table 1 - General Specifications
ITEM
SPECIFICATION
FREQUENCY RANGE
380 - 400 MHz (G8)
403 - 430 MHz (G11)
470 - 492 MHz (G9)
492 - 512 MHz (G10)
403 - 425 MHz (G6)
370 - 390 MHz (G12)
IF FREQUENCY
21.4 MHz
3 dB BANDWIDTH
>3 MHz
IMPEDANCE
50 ohms at RF, LO, and IF Ports
CONVERSION LOSS
-1.5 ± 1.5dB
NOISE FIGURE (NF)
<7.5 dB
THIRD ORDER INTERCEPT POINT
>20 dBm (G9, G10)
>16 dBm (G6, G8, G11, G12)
IMAGE REJECTION
>100dB
INJECTION POWER
-1.5 ± 1.5dB
TEMPERATURE RANGE
-30°C TO +60°C
SUPPLY VOLTAGE
12.0 Vdc
SUPPLY CURRENT
200 mA typical
Figure 1 - Block Diagram
CIRCUIT ANALYSIS
PRESELECTOR FILTER
The received RF signal (J2) is routed through the Preselector Filter (L1 through L5). This filter provides front end
selectivity and attenuates the potential spurious signals of the
first conversion. Typically, the filter has an insertion loss of 3
dB and an operational bandwidth of 2 MHz. The filter is a
tunable, five-pole helical bandpass filter.
PREAMPLIFIER
The output from the Preselector is coupled through an
impedance matching network consisting of C1, C2 and L6 to
the base of Preamplifier Q1. The Preamplifier stage is supplied
by the regulated +12 Vdc line (VCC1) and draws about 80 mA.
It has a low noise figure and high Third Order Intercept point.
Transistor Q2 provides Q1 with a constant current source. The
bias on Q1 is monitored by the Fault Detector circuit via R17.
Capacitors C20 and C21 prevent any RF from entering the fault
circuit. The preamplifier output signal is coupled to the Image
Rejection Filter via an impedance matching network consisting
of C4, C11, L8, L15, R5 and R6.
monitored by the Fault Detector circuit via R21 and R31,
respectively. Capacitors C22, C23 and C26 prevent RF from
entering the fault circuit. The Injection Amplifier output
signal is coupled to the Injection Filter via an impedance
matching network consisting of C8, L13, and resistors R15
and R16.
IMAGE REJECTION FILTER
INJECTION FILTER
Following the Preamplifier is the Image Rejection Filter.
The Image Rejection Filter is a fixed tuned helical bandpass
filter. The Filter has an insertion loss of about 2 dB.
Following the Injection Amplifier is the Injection Filter.
The injection filter is a fixed, tuned helical bandpass filter.
It is used to attenuate harmonics of the Injection Amplifier.
The filter has an insertion loss of about 2 dB.
INJECTION AMPLIFIER
The local oscillator input (J3) from the Receiver Synthesizer is coupled to monolithic amplifier U2, then to the base of
Q8. The Injection Amplifier, consisting of U2, Q8, and associated circuitry, is capable of amplifying the injection signal to
approximately 18 to 22 dBm. The amplifier is powered by the
regulated +12 Vdc line (VCC1). Transistor Q7 provides Q8
with a constant current source. The bias on U2 and Q8 is
DOUBLE BALANCE MIXER
FAULT DETECTOR
The Fault Detector circuit monitors the operation of the
preamplifier and injection amplifier devices. Operational
amplifiers U1.1 and U1.2 compare the bias on the Preamplifier Q1 to preset levels, while U1.3 and U1.4 compare the
bias levels on Injection Amplifiers U2 and Q8.
When the bias for Q1, U2, and Q8 is within the preset
window limits, the output from the comparators is a logic
high level. This high level signal is sent to the Station
Controller on the FLAG 0 line.
If the biasing for the amplifiers is not within the proper
operating range, the fault detector circuit will pull the FLAG
0 line low.
The Double Balance Mixer (DBM) is a broadband
mixer. It converts an RF signal to the 21.4 MHz first conversion IF frequency. The mixer uses low side (G9, G10) or high
side (G6, G8, G11, G12) injection driven by a local oscillator
signal. The mixer conversion loss is typically about 7 dB.
The IF output signal is then routed through a diplexer circuit
to the output connector (J4).
Copyright© November 1994, Ericsson GE Mobile Communications, Inc.
LBI-39129B
MAINTENANCE
TEST PROCEDURE
Following is a test procedure of the module to verify
proper Conversion Gain :
1.
Supply 12 Vdc to pin 15A, B, C. (1C is ground.)
2.
Inject the desired RF Frequency into RF IN at a level
of -10 dBm.
3.
4.
5.
Inject the desired local oscillator frequency into LO
IN at a level of 0 dBm [LO frequency = RF frequency
- 21.4 MHz (for groups G9, G10), or, LO frequency
= RF frequency + 21.4 MHz (for groups G6, G8,
G11, G12)].
For Major Retuning
The best way to do a major retuning of the RXFE is with
swept frequency tuning. The swept frequency tuning can be
done using a Spectrum Analyzer and Tracking Generator.
With proper Injection level the frequency response of the
Preselector Filter can be seen by viewing the RF to IF port
feedthrough on the spectrum analyzer. This feedthrough is
typically 35 dB down from the input level at the RF port. Use
the following procedure for swept frequency tuning:
For Fine-Tuning
12/64
12/64
474
13/64
13/64
13/64
478
14/64
14/64
482
15/64
486
12/64
12/64
10/64
10/64
10/64
8/64
13/64
13/64
497
12/64
10/64
12/64
12/64
9/64
14/64
14/64
14/64
502
14/64
12/64
13/64
14/64
10/64
15/64
15/64
15/64
15/64
507
15/64
15/64
16/64
16/64
12/64
16/64
16/64
16/64
16/64
16/64
512
17/64
16/64
17/64
17/64
14/64
17/64
17/64
17/64
17/64
17/64
2.
Inject the Tracking generator output at 0 dBm into
the RF IN connector, (J2).
492
18/64
18/64
18/64
18/64
18/64
3.
Inject local oscillator power at 0 dBm into the LO IN
connector, (J3) [LO frequency = RF frequency - 21.4
MHz (for groups G9, G10), or, LO frequency = RF
frequency + 21.4 MHz (for groups G6, G8, G11,
G12)].
4.
Preset the height of slugs with respect to the top of
five-pole cavity as follows (Table 2):
5.
Center the spectrum analyzer at the desired frequency
and set the reference at about -30 dBm. Adjust L1 to
L5 for best possible response.
HEIGHT (in inches)
L2
L3
L4
L1
L5
TROUBLESHOOTING GUIDE
SYMPTOM
AREAS TO CHECK
READING (TYP.)
LOW CONVERSION GAIN
Check Vcc
12 V
Preselector Loss
3 dB
Preamplifier Gain
11 dB
Image Rej. Filter Loss
2 dB
1st Mixer Conversion Loss
7 dB
Check Vc of Q1
9 TO 10V
Table 2
G6 & G11
Frequency
(MHz)
403
12/64
10/64
12/64
13/64
12/64
Check Vc of U2
5 TO 6 V
408
13/64
13/64
14/64
14/64
13/64
Check Vc of Q8
9 TO 10 V
413
14/64
14/64
14/64
15/64
14/64
IF FREQUENCY OFF
Check L.O. FREQUENCY
L.O. frequency=RF frequency - 21.4 MHz (G9,G10)
+ 21.4 MHz (G6, G8, G11, G12)
LOW L.O. POWER*
Injection Amplifier Gain
approx 20 dB Gain
Injection Filter Loss
2 dB
L1
HEIGHT (in inches)
L2
L3
L4
L5
Supply 12 Vdc to pin 15A, B, C. (1C is ground.)
418
16/64
16/64
15/64
16/64
15/64
2.
Inject the desired RF Frequency into RF IN (J2) at a
level of -10 dBm.
423
17/64
17/64
16/64
18/64
16/64
3.
Inject the desired local oscillator frequency into LO
IN (J3) at a level of 0 dBm [LO frequency = RF
frequency - 21.4 MHz (for groups G9, G10), or, LO
frequency = RF frequency + 21.4 MHz (for groups
G6, G8, G11, G12)].
G8, G12
Frequency
(MHz)
380
16/64
16/64
16/64
16/64
16/64
Detect IF signal at 21.4 MHz. Slightly adjust L1 to
L5 to get maximum power (don’t adjust more than
1/4 turn). If an RF Voltmeter is used, connect a Low
Pass Filter (LPF)to the IF OUT (J4) to attenuate high
frequency components. The corner of the LPF should
be set for 40 MHz.
385
17/64
17/64
17/64
17/64
17/64
390
18/64
18/64
18/64
18/64
18/64
395
19/64
19/64
19/64
19/64
19/64
400
20/64
20/64
20/64
20/64
20/64
Repeat Test Procedure steps to verify conversion
gain.
370
14/64
14/64
14/64
14/64
14/64
375
15/64
15/64
15/64
15/64
15/64
5.
12/64
490
1.
4.
12/64
G10
Frequency
(MHz)
492
L5
Supply 12 Vdc to pin 15A, B, C. (1C is ground.)
ALIGNMENT PROCEDURE
Alignment for the Receiver Front End module consists
of tuning the five-pole Preselector Filter only. The Image
Rejection Filter and LO injection filter are not to be tuned.
Normally, the RXFE should only need the fine-tuning procedure. For a major receiver frequency change, the RXFE
should be adjusted using the major-retuning procedure.
HEIGHT (in inches)
L2
L3
L4
L1
1.
Measure the IF OUT power at 21.4 MHz, the ratio of
RF IN to IF OUT should be -1.5 ±1.5 dB.
Measure the current drawn by the RXFE module.
Typical current drain is 180 to 230 mA.
G9
Frequency
(MHz)
470
L1
HEIGHT (in inches)
L2
L3
L4
FAULT INDICATOR LOW
L5
NOTE: For troubleshooting the gain or loss, the RXFE needs to be under the normal operating condition:
•
•
•
•
•
12 Vdc supply.
Inject L.O. power at a level of 0 dBm into LO IN (J3), [LO freq. = RF freq. - 21.4 MHz (G9, G10)
or, LO frequency = RF frequency + 21.4 MHz (G6, G8, G11, G12)].
Inject the desired RF signal at a level of -10 dBm into RF IN (J2).
Terminate the IF OUT (J4) with a good 50 ohm impedance.
Use a Spectrum Analyzer and 50 ohm probe (with good RF grounding) to probe at the input and output of
each stage to check its gain or loss (see schematic diagram).
PARTS LIST & PRODUCTION CHANGES
RECEIVER FRONT END MODULE
19D902782G6 (403-425 MHz)
19D902782G8 (380-400 MHz)
19D902782G9 (470-494 MHz)
19D902782G10 (492-512 MHz)
19D902782G11 (403-430 MHz)
19D902782G12 (370-390 MHz)
ISSUE 3
SYMBOL
PART NO.
DESCRIPTION
SYMBOL
C39
and
C40
PART NO.
19A705205P15
DESCRIPTION
Tantalum: 33 uf + or - 20%, 16 VDCW. (Used in G8, G10
and G11).
SYMBOL
- - - - - - - - - - - DIODES - - - - - - - - - CR1
344A3062P1
Diode, Schottky.
- - - - - - - - - MISCELLANEOUS - - - - - - - - -
CR2
19A703595P10
Diode, optoelectric: Red; sim to HP HLMP-1301-010
(Used in G8).
C1
19A702061P37
- - - - - - - - - - CAPACITORS - - - - - - - - Ceramic: 33 pF + or -5%, 50 VDCW, temp coef 0 +
or -30 PPM/‘C. (Used in G8, G12).
C1
19A702052P14
Ceramic: 0.01 uF + or - 10%, 50 VDCW. (Used in G6,
G10 and G11).
C1
19A702061P21
Ceramic: 15 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM. (Used in G9).
C2
C2
C2
C3
C7
C7
C7
C7
C8
19A702061P17
19A702061P21
19A702061P12
19A702052P14
19A702052P14
19A702061P33
19A702236P32
19A702061P37
19A702052P14
Ceramic: 12 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM. (Used in G6, G8, G11 and G12).
Ceramic: 15 pF + or - 5%, 50 VDCW, temp coef 0
+ or - 30 PPM. (Used in G9).
Ceramic: 8.2 pF + or - 0.5 pF, 50 VDCW, temp
or - 60 PPM. (Used in G10).
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
Ceramic: 0.01 uF + or - 10%, 50 VDCW. (Used in G8,
G12).
Ceramic: 27 pF + or - 5%, 50 VDCW, temp coef 0 + or 30 PPM. (Used in G6 and G11).
Ceramic: 18 pF + or -5%, 50 VDCW, temp coef 0 + or -30
PPM. (Used in G9).
Ceramic: 33 pF + or -5%, 50 VDCW, temp coef 0 + or -30
PPM/‘C. (Used in G10).
Ceramic: 0.01 uF + or - 10%, 50 VDCW. (Used in G6, G8,
G9, G11, and G12).
C8
19A702061P17
Ceramic: 12 pF + or - 5%, 50 VDCW, temp coef 0 + or 30 PPM. (Used in G10).
C9
19A702061P9
Ceramic: 4.7 pF + or - 0.5 pF, 50 VDCW, temp
or - 60 PPM. (Used in G6, G8, G11 and G12).
C10
C10
C11
C12
C12
19A702061P11
19A702236P17
19A702061P33
19A702052P14
19A702061P8
C20
thru
C26
19A702052P14
C28
19A702052P14
C29
and
C30
19A702061P89
C31
thru
C33
19A702236P40
Ceramic: 6.8 pF + or - 0.5 pF, 50 VDCW, temp
or - 60 PPM. (Used in G6, G8, G10, G11 and G12).
Ceramic: 4.7 pF + or -5%, 50 VDCW, temp coef 0
+ or -30 PPM. (Used in G9).
Ceramic: 27 pF + or -5%, 50 VDCW, temp coef 0 + or -30
PPM/‘C. (Used in G10).
Ceramic: 0.01 uF + or - 10%, 50 VDCW. (Used in G6, G8,
G11 and G12).
Ceramic: 3.9 pF + or - 0.5 pF, 50 VDCW, temp
or - 120 PPM. (Used in G9 and G10).
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
Coil, fixed: 0.12 uH; sim to Toko 380NB-R12M. (Used
in G6 and G11).
L9
19A705470P1
Coil, fixed: 10 nH; sim to Toko 380NB-10nM. (Used in
G10).
19B800607P101
Metal film: 100 ohms + or -5%, 1/8 w. (Used in G8,
G12).
R16
19B800607P391
Metal film: 390 ohms + or -5%, 1/8 w. (Used in G6 and
G11).
R17
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
R18
19B800607P562
Metal film: 5.6K ohms + or -5%, 1/8 w.
R19
19B800607P183
Metal film: 18K ohms + or -5%, 1/8 w.
R20
19B800607P333
Metal film: 33K ohms + or -5%, 1/8 w.
R21
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
R22
19B800607P272
Metal film: 2.7K ohms + or -5%, 1/8 w.
Coil, fixed: 0.18 nH; sim to Toko 380NB-R18M.
FL1
19A705458P4
Helical, UHF: 403-425 MHz. (Used in G6).
L11
19A705470P16
Coil, fixed: 0.18 nH; sim to Toko 380NB-R18M. (Used
in G8 and G12).
FL1
19A705458P9
Helical, 403-430 MHz. (Used in G11).
FL1
19A705458P2
Helical, UHF: 470-492 MHz. (Used in G9).
FL1
19A705458P6
Helical, UHF: 492-515 MHz. (Used in G10).
FL1
19A705458P13
Helical, UHF: 391-415 MHz. (Used in G12).
FL2
19A705458P4
Helical, UHF: 403-425 MHz. (Used in G8).
FL2
19A705458P5
Helical, UHF: 424-450 MHz. (Used in G6 and G11).
L12
19A705470P16
Coil, fixed: 0.18 uH; sim to Toko 380NB-R18M.
R23
19B800607P152
Metal film: 1.5K ohms + or -5%, 1/8 w.
FL2
19A705458P1
Helical, UHF: 450-470 MHz. (Used in G9).
L13
19A705470P10
Coil, fixed: 56 nH; sim to Toko 380NB-56nM.
(Used in G6 and G11).
R24
19B800607P153
Metal film: 15K ohms + or -5%, 1/8 w.
FL2
19A705458P2
Helical, UHF: 470-492 MHz. (Used in G10).
R25
19B800607P390
FL2
19A705458P12
Helical, UHF: 370-390 MHz. (Used in G12).
Metal film: 39 ohms + or -5%, 1/8 w. (Used in G8,
G10, and G12).
R25
19B800607P560
Metal film: 56 ohms + or -5%, 1/8 w. (Used in G6 and
G11).
L11
L11
J2
thru
J4
19B801587P7
19A115938P24
19A705470P48
19A705470P7
Coil, fixed: 10 nH; sim to Toko 3 80NB-10nM.(Used in
G6 and G11).
Coil, fixed: 82 uH; sim to TOKO 380KB-820K. (Used in
G9).
Coil, fixed: 33 nH + or -20%; sim to Toko
380NB-33nM. (Used in G10).
19A705470P4
Coil, fixed: 18 nH; sim to Toko 380NB-18nM.
(Used in G6, G8, G11 and G12).
L14
and
L15
19A705470P6
Coil: 27 nH; sim to Toko 380NB-27nM. (Used in G10).
R25
19B800607P330
Metal film: 33 ohms + or -5%, 1/8 w. (Used in G9).
L21
19A705470P16
Coil, fixed: 0.18 uH; sim to Toko 380NB-R18M.
R26
19B800607P560
Metal film: 56 ohms + or -5%, 1/8 w.
L22
19A700021P105
Coil, RF: fixed. (Used in G6, G8, G10, and G11).
R27
19B800607P121
Metal film: 120 ohms + or -5%, 1/8 w.
- - - - - - - - - - INDUCTORS - - - - - - - - - -
L22
19A700021P106
Coil, RF. (Used in G9).
R28
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
- - - - - - - - - MISCELLANEOUS - - - - - - - - J1
19A705470P1
L14
Connector, Din: 96 male contacts, right angle mounting;
sim to AMP 650889-1.
Connector, receptacle.
L1
19C850817P30
Coil, RF. (Used in G8).
L23
19A700021P13
Coil, RF: fixed, 470 nH.
R29
19B800607P682
Metal film: 6.8K ohms + or -5%, 1/8 w.
L1
19C850817P29
Coil, RF. (Used in G6 and G11).
L24
19A700000P122
Coil, fixed: 8.2 uF + or -10%; sim to Jeffers 22-8.2-10
(Used in G8, G10 and G11).
R30
19B800607P201
Metal film: 200 ohms + or -5%, 1/8 w.
L1
19C850817P3
RF Coil: sim to Paul Smith SK853-1. (Used in G9).
R31
19B800607P103
Metal film: 10K ohms + or -5%, 1/8 w.
L1
19C850817P18
RF Coil: sim to Paul Smith SK853-1. (Used in G10).
R32
19B800607P101
Metal film: 100 ohms + or -5%, 1/8 w. (Used in G8).
L2
19C850817P31
Coil. RF. (Used in G8).
R32
19B800607P331
Metal film: 330 ohms + or -5%, 1/8 w. (Used in G10).
L2
19C850817P5
RF Coil: sim to Paul Smith SK853-1. (Used in G6 and
G11).
R32
19B800607P201
Metal film: 200 ohms + or -5%, 1/8 w. (Used in G12).
R33
19B800607P510
- - - - - - - - - - TRANSISTORS - - - - - - - - Q7
Q8
L2
19C850817P4
RF Coil: sim to Paul Smith SK853-1. (Used in G9).
L2
19C850817P17
RF Coil: sim to Paul Smith SK853-1. (Used in G10).
L3
19C850817P31
RF Coil: (Used in G8).
L3
19C850817P5
RF Coil: sim to Paul Smith SK853-1. (Used in G6
andG11).
L3
19C850817P4
RF Coil: sim to Paul Smith SK853-1. (Used in
G9).
L3
19C850817P17
RF Coil: sim to Paul Smith SK853-1. (Used in
G10).
19A700059P2
344A3058P1
Silicon, PNP: sim to MMBT3906, low profile.
Silicon, NPN.
- - - - - - - - - - RESISTORS - - - - - - - - - -
R1
19B800607P332
Metal film: 3.3K ohms + or -5%, 1/8 w. (Used in G8).
R1
19B800607P183
Metal film: 18K ohms + or -5%, 1/8 w. (Used in G6,
G9, G10, and G11).
R2
19B800607P102
Metal film: 1K ohms + or -5%, 1/8 w.
R3
19B800607P331
Metal film: 330 ohms + or -5%, 1/8 w.
R4
19B800607P560
Metal film: 56 ohms + or -5%, 1/8 w.
R5
19B800607P1
Metal film: Jumper. (Used in G8 , G9 and G12).
R5
19B800607P100
Metal film: 10 ohms + or -5%, 1/8 w. (Used in G6 and
G11).
Metal film: 51 ohms + or -5%, 1/8 w.
- - - - - - - - - - TRANSFORMERS - - - - - - - -
T1
and
T2
344A3063P1
Transformer.
U2
344A3907P1
19D902555P1
Handle.
19A702381P1506
Screw, thread forming: Torx, No. M3.5-.6 x 6.
19A702381P1513
Screw, thread forming: Panhead..
11
19A702381P1508
Screw, thread forming: No. 3.5-0.6 x 8.
- - - - - - - INTEGRATED CIRCUITS - - - - - - Integrated circuit, MMIC: sim to Avantek
MSA-1105.
- - - - - - - - - MISCELLANEOUS - - - - - - - - -
L4
19C850817P31
Coil, RF. (Used in G8).
L4
19C850817P5
RF Coil: sim to Paul Smith SK853-1. (Used in G6 and
G11).
L4
19C850817P4
RF Coil: sim to Paul Smith SK853-1. (Used in G9).
L4
19C850817P17
RF Coil: sim to Paul Smith SK853-1. (Used in G10).
R7
19B800607P201
Metal film: 200 ohms + or -5%, 1/8 w.
20
19B800701P2
Tuning screw.
L5
19C850817P30
Coil, RF. (Used in G8).
R8
19B800607P121
Metal film: 120 ohms + or -5%, 1/8 w.
21
19A701800P1
Stop nut.
L5
19C850817P29
Coil, RF. (Used in G6and G11).
R9
19B800607P100
Metal film: 10 ohms + or -5%, 1/8 w. (Used in G6, G8
G11 and G12).
22
19D902467P2
Casting.
L5
19C850817P3
RF Coil: sim to Paul Smith SK853-1. (Used in G9).
27
19D902508P5
Chassis..
L5
19C850817P18
RF Coil: sim to Paul Smith SK853-1. (Used in G10).
19A705470P1
Coil, Fixed: 10 nH; sim to Toko 380NB-10nM.
(Used in G6, G9 and G11).
L6
19A705470P5
Coil, Fixed: 22 nH; sim to Toko 380NB-22nM.
(Used in G10).
Tantalum: 3.3 uf + or - 20%, 16 VDCW. (Used in G8, G10
and G11).
R16
19A705470P16
L6
19A705205P26
Metal film: 10 ohms + or -5%, 1/8 w. (Used in G6 and
G11).
L10
Ceramic: 1500 pF + or - 5%, 50 VDCW, temp coef - 30
PPM.
C37
and
C38
DESCRIPTION
19B800607P100
Helical, 378-402 MHz. (Used in G8).
Ceramic: 0.01 uF + or - 10%, 50 VDCW.
Ceramic: 33 pF + or -5%, 50 VDCW, temp coef 0 + or -30
PPM/‘C.
SYMBOL
19A705458P8
Coil, Fixed: 18 nH; sim to Toko 380NB-18nM.
(Used in G8, G12).
19A702061P37
PART NO.
R15
FL1
19A705470P4
C34
thru
C36
DESCRIPTION
19A705470P14
- - - - - - - - - - - FILTERS - - - - - - - - - -
L6
Ceramic: 39 pF + or -5%, 50 VDCW, temp coef 0 + or -30
PPM.
PART NO.
L9
L11
RECEIVER FRONT END BOARD
19D902782G6, G8-G12
LBI-39129B
R6
19B800607P101
Metal film: 100 ohms + or -5%, 1/8 w. (Used in G8,
G12).
R6
19B800607P391
Metal film: 390 ohms + or -5%, 1/8 w. (Used in G6 and
G11).
R9
19B800607P1
Metal film: Jumper. (Used in G9 and G10).
R10
19B800607P101
Metal film: 100 ohms + or -5%, 1/8 w. (Used in G8,
G12).
R10
19B800607P391
Metal film: 390 ohms + or -5%, 1/8 w. (Used in G6 and
G11).
R11
19B800607P332
Metal film: 3.3K ohms + or -5%, 1/8 w.
R12
19B800607P562
Metal film: 5.6K ohms + or -5%, 1/8 w.
L7
19A705470P16
Coil, Fixed: 0.18 uH; sim to Toko 380NB-R18M.
R13
19B800607P122
Metal film: 1.2K ohms + or -5%, 1/8 w.
L8
19A705470P12
Coil, fixed: 82nH; sim to Toko 380NB-82nM. (Used in G8,
G12).
R14
19B800607P390
Metal film: 39 ohms + or -5%, 1/8 w. (Used in G8 ,
G10, and G12).
L8
19A705470P11
Coil, fixed: 68 nH; sim to Toko 380NB-68nM. (Used in G6
and G11).
R14
19B800607P560
Metal film: 56 ohms + or -5%, 1/8 w. (Used in G6 and
G11).
L8
19A705470P6
Coil: 27 nH; sim to Toko 380NB-27nM. (Used in G9 and
G10).
R14
19B800607P330
Metal film: 33 ohms + or -5%, 1/8 w. (Used in G9).
R15
19B800607P1
Metal film: Jumper. (Used in G8, G9, G10, and G12).
L9
19A705470P6
Coil: 27 nH; sim to Toko 380NB-27nM. (Used in G8 and
G9, G12).
28
19D902534P2
Cover, RF.
29
19D904572P1
Gasket.
30
19B802690P1
Grommet.
PRODUCTION CHANGES
Changes in the equipment to improve performance or to simplify circuits are identified by
a "Revision Letter", which is stamped after the model number on the unit. The revision
stamped on the unit includes all previous revisions. Refer to the Parts List for the description of parts affected by these revisions.
REV. A - RECEIVER FRONT END BOARD 19D902490G6
RECEIVER FRONT END BOARD 19D902490G11
Add new splits. PWB changed.
REV. A - RECEIVER FRONT END BOARD 19D902490G8
REV. B - RECEIVER FRONT END BOARD 19D902490G11 & G10
To eliminate receiver spurious response at 100 kHz switching power
supply frequency. Added C37 thru C40 and L24.
* COMPONENTS, ADDED, DELETED OR CHANGED BY PRODUCTION CHANGES
OUTLINE DIAGRAM
LBI-39129B
U1
19A704125P1
Quad Operational Amplifier
RECEIVER FRONT END BOARD
19D902490G6, G8 - G12
(19D902490, Sh. 7, Rev. 5)
ASSEMBLY DIAGRAM
LBI-39129B
RECEIVER FRONT END MODULE
19D902782G6, G8 - G12
(19D902782 Sh.2 Rev.3)
LBI-39129B
RECEIVER FRONT END MODULE
19D902782G6, G8-G12
(188D5789 Sh.1, Rev. 6A)
SCHEMATIC DIAGRAM
SCHEMATIC DIAGRAM
LBI-39129B
RECEIVER FRONT END MODULE
19D902782G6, G8 - G12
(188D5789 Sh.2, Rev. 6A)

---

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Create Date                     : 1997:08:16 15:54:55
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Title                           : LBI-38643C - 25 KHZ RECEIVER IF MODULE 19D902783G1
Subject                         : MAINTENANCE
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Page Count                      : 92
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