Panasonic 2SB1679 User Manual To The 207f0600 Bac7 42a2 Ae8e 287bc13941f5

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Transistors

2SB1679
Silicon PNP epitaxial planar type
For low-frequency amplification
(0.425)

Unit: mm
0.3+0.1
–0.0

■ Features

0.15+0.10
–0.05

2.1±0.1
0.9+0.2
–0.1

5°

1.25±0.10
0.9±0.1

3

• Large collector output capacitance (Common base, input open circuited) Cob
• Low collector-emitter saturation voltage VCE(sat)
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing

2

0.2±0.1

1

(0.65) (0.65)
1.3±0.1

■ Absolute Maximum Ratings Ta = 25°C

2.0±0.2

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

−15

V

Collector-emitter voltage (Base open)

VCEO

−10

V

Emitter-base voltage (Collector open)

VEBO

−7

V

Collector current

IC

− 0.5

A

Peak collector current

ICP

−1

A

Collector power dissipation

PC

150

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

10°

0 to 0.1

Parameter

1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package

Marking Symbol: 3V

■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

VCBO

IC = −10 µA, IE = 0

−15

V

Collector-emitter voltage (Base open)

VCEO

IC = −1 mA, IB = 0

−10

V

Emitter-base voltage (Collector open)

VEBO

IE = −10 µA, IC = 0

−7

Collector-base cutoff current (Emitter open)

ICBO

VCB = −10 V, IE = 0

Forward current transfer ratio *1

hFE1 *2
hFE2

VCE = −2 V, IC = − 0.5 A

130

VCE = −2 V, IC = −1 A

60

V
−100

nA

350



Collector-emitter saturation voltage *1

VCE(sat)

IC = − 0.4 A, IB = −8 mA

− 0.16 − 0.30

V

Base-emitter saturation voltage *1

VBE(sat)

IC = − 0.4 A, IB = −8 mA

− 0.8

V

VCB = −10 V, IE = 50 mA, f = 200 MHz

130

MHz

VCB = −10 V, IE = 0, f = 1 MHz

22

pF

Transition frequency

fT

Collector output capacitance
(Common base, input open circuited)

Cob

−1.2

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank

R

S

hFE1

130 to 220

180 to 350

Publication date: February 2003

SJC00097BED

1

Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.



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