Texas Instruments 26M1 BLE and 802.15.4 module User Manual

Texas Instruments Inc. BLE and 802.15.4 module Users Manual

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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCT PREVIEW Information. Product in design phase of

development. Subject to change or discontinuance without notice.

CC2650MOD

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CC2650MOD SimpleLink™ Multistandard Wireless MCU Module

1 Device Overview

1.1 Features

• Microcontroller

– Powerful ARM®Cortex®-M3

– EEMBC CoreMark®Score: 142

– Up to 48-MHz Clock Speed

– 128KB of In-System Programmable Flash

– 8KB of SRAM for Cache

– 20KB of Ultra-Low Leakage SRAM

– 2-Pin cJTAG and JTAG Debugging

– Supports Over-The-Air Upgrade (OTA)

• Ultra-Low Power Sensor Controller

– Can Run Autonomous From the Rest of the

System

– 16-Bit Architecture

– 2KB of Ultra-Low Leakage SRAM for Code and

Data

• Efficient Code Size Architecture, Placing Drivers,

Bluetooth®low energy Controller, IEEE 802.15.4

MAC, and Bootloader in ROM

• Integrated Antenna

• Peripherals

– All Digital Peripheral Pins Can Be Routed to

Any GPIO

– Four General-Purpose Timer Modules (8 × 16-

Bit or 4 × 32-Bit Timer, PWM Each)

– 12-Bit ADC, 200-ksamples/s, 8-Channel Analog

MUX

– Continuous Time Comparator

– Ultra-Low Power Analog Comparator

– Programmable Current Source

– UART

– 2 × SSI (SPI, MICROWIRE, TI)

– I2C

– I2S

– Real-Time Clock (RTC)

– AES-128 Security Module

– True Random Number Generator (TRNG)

– 15 GPIOs

– Support for Eight Capacitive Sensing Buttons

– Integrated Temperature Sensor

• External System

– On-Chip internal DC-DC Converter

– No External Components Needed, Only Supply

Voltage

– Version With CC2592 Range Extender Available

• Low Power

– Wide Supply Voltage Range

• Operation from 1.8 to 3.8 V

– Active-Mode RX: 6.1 mA

– Active-Mode TX at 0 dBm: 6.1 mA

– Active-Mode TX at +5 dBm: 9.1 mA

– Active-Mode MCU: 61 µA/MHz

– Active-Mode MCU: 48.5 CoreMark/mA

– Active-Mode Sensor Controller: 8.2 µA/MHz

– Standby: 1 µA (RTC Running and RAM/CPU

Retention)

– Shutdown: 100 nA (Wake Up on External

Events)

• RF Section

– 2.4-GHz RF Transceiver Compatible With

Bluetooth low energy (BLE) 4.1 Specification

and IEEE 802.15.4 PHY and MAC

– Excellent Receiver Sensitivity (–97 dBm for

Bluetooth low energy and –100 dBm for

802.15.4), Selectivity, and Blocking

Performance

– Programmable Output Power up to +5 dBm

– Integrated Antenna

– Pre-Certified for Compliance With Worldwide

Radio Frequency Regulations

• ETSI (Europe)

• IC (Canada)

• FCC (USA)

• ARIB STD-T66 (Japan)

• Tools and Development Environment

– Full-Feature and Low-Cost Development Kits

– Multiple Reference Designs for Different RF

Configurations

– Packet Sniffer PC Software

– Sensor Controller Studio

– SmartRF™ Studio

– SmartRF Flash Programmer 2

– IAR Embedded Workbench®for ARM

– Code Composer Studio™

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1.2 Applications

• Consumer Electronics

• Mobile Phone Accessories

• Sports and Fitness Equipment

• HID Applications

• Home and Building Automation

• Lighting Control

• Alarm and Security

• Proximity Tags

• Medical

• Remote Controls

• Wireless Sensor Networks

(1) For more information, see Section 9,Mechanical Packaging and Orderable Information.

1.3 Description

The CC2650MOD device is a SimpleLink™ wireless MCU module that targets Bluetooth Smart, ZigBee®

and 6LoWPAN, and ZigBee®RF4CE remote control applications.

The module is based on the CC2650 Wireless MCU, a member of the CC26xx family of cost-effective,

ultra-low power, 2.4-GHz RF devices. Very low active RF and MCU current and low-power mode current

consumption provide excellent battery lifetime and allow for operation on small coin cell batteries and in

energy-harvesting applications.

The CC2650MOD contains a 32-bit ARM Cortex-M3 processor that runs at 48 MHz as the main processor

and a rich peripheral feature set that includes a unique ultra-low power sensor controller. This sensor

controller is ideal for interfacing external sensors or for collecting analog and digital data autonomously

while the rest of the system is in sleep mode. Thus, the CC2650MOD device is ideal for applications

within a whole range of products including industrial, consumer electronics, and medical devices.

The CC2650MOD is precertified for operation under the regulations of the FCC, IC, ETSI and ARIB.

These certifications save significant cost and effort for customers when integrating the module into their

products.

The Bluetooth low energy controller and the IEEE 802.15.4 MAC are embedded in the ROM and are partly

running on a separate ARM®Cortex®-M0 processor. This architecture improves overall system

performance and power consumption and makes more flash memory available.

The Bluetooth Smart and ZigBee stacks are available free of charge from www.ti.com.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE

CC2650MODAMOH MOH (Module) 16.90 mm × 11.00 mm

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Main CPU:

128KB

Flash

Sensor Controller

cJTAG

20KB

SRAM

ROM

ARM®

Cortex®-M3

DC/DC converter

RF core

ARM®

Cortex®-M0

DSP Modem

4KB

SRAM

ROM

Sensor Controller Engine

2× Analog Comparators

12-bit ADC, 200ks/s

Constant Current Source

SPI / I2C Digital Sensor IF

2KB SRAM

Time to Digital Converter

General Peripherals / Modules

4× 32-bit Timers

2× SSI (SPI, µWire,TI)

Watchdog Timer

Temp. / Batt. Monitor

RTC

I2C

UART

I2S

10 / 15 / 31 GPIOs

AES

32 ch. µDMA

ADC

Digital PLL

SimpleLinkTM CC2650MOD

Wireless MCU Module

TRNG

8KB

Cache

24MHz Crystal

Oscillator

32.768kHz

Crystal

Oscillator RF Balun

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1.4 Functional Block Diagram

Figure 1-1 is a block diagram for the CC2650MOD device.

Figure 1-1. CC2650MOD Block Diagram

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Table of Contents

1 Device Overview ......................................... 1

1.1 Features .............................................. 1

1.2 Applications........................................... 2

1.3 Description............................................ 2

1.4 Functional Block Diagram ............................ 3

2 Revision History ......................................... 4

3 Device Comparison ..................................... 5

4 Terminal Configuration and Functions.............. 6

4.1 Module Pin Diagram.................................. 6

4.2 Pin Functions ......................................... 7

5 Specifications ............................................ 8

5.1 Absolute Maximum Ratings .......................... 8

5.2 ESD Ratings.......................................... 8

5.3 Recommended Operating Conditions ................ 8

5.4 Power Consumption Summary ....................... 9

5.5 General Characteristics .............................. 9

5.6 Antenna ............................................. 10

5.7 1-Mbps GFSK (Bluetooth low energy) – RX ........ 10

5.8 1-Mbps GFSK (Bluetooth low energy) – TX ........ 11

5.9 2-Mbps GFSK (Bluetooth low energy) – RX ........ 11

5.10 2-Mbps GFSK (Bluetooth low energy) – TX ........ 12

5.11 IEEE 802.15.4 (Offset Q-PSK DSSS, 250 kbps) –

RX ................................................... 12

5.12 IEEE 802.15.4 (Offset Q-PSK DSSS, 250 kbps) –

TX ................................................... 13

5.13 24-MHz Crystal Oscillator (XOSC_HF) ............. 13

5.14 32.768-kHz Crystal Oscillator (XOSC_LF).......... 13

5.15 48-MHz RC Oscillator (RCOSC_HF) ............... 13

5.16 32-kHz RC Oscillator (RCOSC_LF)................. 13

5.17 ADC Characteristics................................. 14

5.18 Temperature Sensor ................................ 15

5.19 Battery Monitor...................................... 15

5.20 Continuous Time Comparator....................... 15

5.21 Low-Power Clocked Comparator ................... 15

5.22 Programmable Current Source ..................... 16

5.23 DC Characteristics .................................. 16

5.24 Thermal Resistance Characteristics for MOH

Package ............................................. 17

5.25 Timing Requirements ............................... 17

5.26 Switching Characteristics ........................... 17

5.27 Typical Characteristics .............................. 20

6 Detailed Description ................................... 25

6.1 Overview ............................................ 25

6.2 Functional Block Diagram........................... 25

6.3 Main CPU ........................................... 26

6.4 RF Core ............................................. 26

6.5 Sensor Controller ................................... 27

6.6 Memory.............................................. 28

6.7 Debug ............................................... 28

6.8 Power Management................................. 29

6.9 Clock Systems ...................................... 30

6.10 General Peripherals and Modules .................. 30

6.11 System Architecture................................. 32

6.12 Certification.......................................... 32

6.13 End Product Labeling ............................... 33

6.14 Manual Information to the End User ................ 33

7 Application, Implementation, and Layout ......... 34

7.1 Application Information .............................. 34

8 Device and Documentation Support ............... 35

8.1 Device Nomenclature ............................... 35

8.2 Tools and Software ................................. 36

8.3 Documentation Support ............................. 37

8.4 Texas Instruments Low-Power RF Website ........ 37

8.5 Low-Power RF eNewsletter ......................... 37

8.6 Community Resources.............................. 38

8.7 Additional Information ............................... 38

8.8 Trademarks.......................................... 38

8.9 Electrostatic Discharge Caution..................... 39

8.10 Export Control Notice ............................... 39

8.11 Glossary ............................................. 39

9 Mechanical Packaging and Orderable

Information .............................................. 39

9.1 Packaging Information .............................. 39

2 Revision History

DATE REVISION NOTES

August 2016 * Initial Release

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3 Device Comparison

Table 3-1. Device Family Overview

DEVICE PHY SUPPORT FLASH

(KB) RAM (KB) GPIO PACKAGE

CC2650MODAMOH Multiprotocol 128 20 15 MOH

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CC2650MOD

(Exposed GND Pads)

7 19

10 11 12 13 14 15 16

Antenna

GND

DIO 0

DIO 1

DIO 2

DIO 3

DIO 4

JTAG_TMS

VDD

DIO 14

DIO 13

DIO 12

DIO 11

DIO 10

JTAG_TCK

DIO 5/JTAG_TDO

DIO 6/JTAG_TDI

nRESET

DIO 7

DIO 8

DIO 9

GND GND

G1 G2

G3 G4

NC NC

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4 Terminal Configuration and Functions

4.1 Module Pin Diagram

(1) The following I/O pins marked in bold in the pinout have high-drive capabilities:

• DIO 2

• DIO 3

• DIO 4

• JTAG_TMS

• DIO 5/JTAG_TDO

• DIO 6/JTAG_TDI

(2) The following I/O pins marked in italics in the pinout have analog capabilities:

• DIO 7

• DIO 8

• DIO 9

• DIO 10

• DIO 11

• DIO 12

• DIO 13

• DIO 14

Figure 4-1. MOH Package

(16.9-mm × 11-mm) Module Pinout

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4.2 Pin Functions

Table 4-1. Signal Descriptions – MOH Package

PIN NAME PIN NO. PIN TYPE DESCRIPTION

DIO_0 4 Digital I/O GPIO, Sensor Controller

DIO_1 5 Digital I/O GPIO, Sensor Controller

DIO_2 6 Digital I/O GPIO, Sensor Controller, high-drive capability

DIO_3 7 Digital I/O GPIO, Sensor Controller, high-drive capability

DIO_4 8 Digital I/O GPIO, Sensor Controller, high-drive capability

DIO_5/JTAG_TDO 11 Digital I/O GPIO, high-drive capability, JTAG_TDO

DIO_6/JTAG_TDI 12 Digital I/O GPIO, high-drive capability, JTAG_TDI

DIO_7 14 Digital I/O, Analog I/O GPIO, Sensor Controller, analog

DIO_8 15 Digital I/O, Analog I/O GPIO, Sensor Controller, analog

DIO_9 16 Digital I/O, Analog I/O GPIO, Sensor Controller, analog

DIO_10 17 Digital I/O, Analog I/O GPIO, Sensor Controller, analog

DIO_11 18 Digital I/O, Analog I/O GPIO, Sensor Controller, analog

DIO_12 19 Digital I/O, Analog I/O GPIO, Sensor Controller, analog

DIO_13 20 Digital I/O, Analog I/O GPIO, Sensor Controller, analog

DIO_14 21 Digital I/O, Analog I/O GPIO, Sensor Controller, analog

EGP G1, G2, G3, G4 Power Ground – Exposed ground pad

GND 1, 25 — Ground

JTAG_TCKC 10 Digital I/O JTAG TCKC

JTAG_TMSC 9 Digital I/O JTAG TMSC, high-drive capability

NC 2, 24 NC Not Connected—TI recommends that these pins are left

floating

RESET_N 13 Digital input Reset, active low. No internal pullup

VDDS 22, 23 Power 1.8-V to 3.8-V main chip supply

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(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to ground, unless otherwise noted.

(3) Including analog capable DIO.

5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)

MIN MAX UNIT

VDDS Supply voltage –0.3 4.1 V

Voltage on any digital pin(3) –0.3 VDDS + 0.3, max 4.1 V

Vin Voltage on ADC input

Voltage scaling enabled –0.3 VDDS

VVoltage scaling disabled, internal reference –0.3 1.49

Voltage scaling disabled, VDDS as reference –0.3 VDDS / 2.9

Input RF level 5 dBm

Tstg Storage temperature –40 85 °C

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

5.2 ESD Ratings

VALUE UNIT

VESD Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC

JS001(1) All pins ±2500

Charged device model (CDM), per JESD22-C101(2) RF pins ±750

Non-RF pins ±750

5.3 Recommended Operating Conditions

MIN MAX UNIT

Ambient temperature –40 85 °C

Operating supply voltage (VDDS)

For operation in battery-powered and 3.3-V

systems

(internal DC-DC can be used to minimize power

consumption)

1.8 3.8 V

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(1) Iperi is not supported in Standby or Shutdown.

5.4 Power Consumption Summary

Tc= 25°C, VDDS = 3.0 V with internal DC-DC converter, unless otherwise noted

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Icore Core current consumption

Reset. RESET_N pin asserted or VDDS below

Power-on-Reset threshold 100 nA

Shutdown. No clocks running, no retention 150

Standby. With RTC, CPU, RAM and (partial)

µA

Standby. With RTC, CPU, RAM and (partial)

Standby. With Cache, RTC, CPU, RAM and

(partial) register retention. RCOSC_LF 2.5

Standby. With Cache, RTC, CPU, RAM and

(partial) register retention. XOSC_LF 2.7

Idle. Supply systems and RAM powered. 550

Active. Core running CoreMark 1.45 mA +

31 µA/MHz

Radio RX 6.1

mARadio TX, 0-dBm output power 6.1

Radio TX, 5-dBm output power 9.1

Peripheral Current Consumption (Adds to core current Icore for each peripheral unit activated)(1)

Iperi

Peripheral power domain Delta current with domain enabled 20 µA

Serial power domain Delta current with domain enabled 13 µA

RF Core Delta current with power domain enabled, clock

enabled, RF Core Idle 237 µA

µDMA Delta current with clock enabled, module idle 130 µA

Timers Delta current with clock enabled, module idle 113 µA

I2C Delta current with clock enabled, module idle 12 µA

I2S Delta current with clock enabled, module idle 36 µA

SSI Delta current with clock enabled, module idle 93 µA

UART Delta current with clock enabled, module idle 164 µA

(1) This number is dependent on Flash aging and will increase over time and erase cycles

5.5 General Characteristics

Tc= 25°C, VDDS = 3.0 V, unless otherwise noted

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

FLASH MEMORY

Supported flash erase cycles before

failure 100 k Cycles

Flash page/sector erase current Average delta current 12.6 mA

Flash page/sector erase time(1) 8 ms

Flash page/sector size 4 KB

Flash write current Average delta current, 4 bytes at a time 8.15 mA

Flash write time(1) 4 bytes at a time 8 µs

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5.6 Antenna

Tc= 25°C, VDDS = 3.0 V, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Polarization Linear

Peak Gain 2450 MHz 1.26 dBi

Efficiency 2450 MHz 56.9 %

(1) Numbers given as I/C dB

(2) X / Y, where X is +N MHz and Y is –N MHz

(3) Excluding one exception at Fwanted / 2, per Bluetooth Specification

5.7 1-Mbps GFSK (Bluetooth low energy) – RX

RF performance is specified in a single ended 50-Ωreference plane at the antenna feeding point with Tc= 25°C,

VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Receiver sensitivity BER = 10–3 –97 dBm

Receiver saturation BER = 10–3 4 dBm

Frequency error tolerance Difference between center frequency of the received RF signal

and local oscillator frequency. –350 350 kHz

Data rate error tolerance –750 750 ppm

Co-channel rejection(1) Wanted signal at –67 dBm, modulated interferer in channel,

BER = 10–3 –6 dB

Selectivity, ±1 MHz(1) Wanted signal at –67 dBm, modulated interferer at ±1 MHz,

BER = 10–3 7 / 3(2) dB

Selectivity, ±2 MHz(1) Wanted signal at –67 dBm, modulated interferer at ±2 MHz,

BER = 10–3 34 / 25(2) dB

Selectivity, ±3 MHz(1) Wanted signal at –67 dBm, modulated interferer at ±3 MHz,

BER = 10–3 38 / 26(2) dB

Selectivity, ±4 MHz(1) Wanted signal at –67 dBm, modulated interferer at ±4 MHz,

BER = 10–3 42 / 29(2) dB

Selectivity, ±5 MHz or more(1) Wanted signal at –67 dBm, modulated interferer at ≥±5 MHz,

BER = 10–3 32 dB

Selectivity, Image frequency(1) Wanted signal at –67 dBm, modulated interferer at image

frequency, BER = 10–3 25 dB

Selectivity,

Image frequency ±1 MHz(1) Wanted signal at –67 dBm, modulated interferer at ±1 MHz from

image frequency, BER = 10–3 3 / 26(2) dB

Out-of-band blocking(3) 30 MHz to 2000 MHz –20 dBm

Out-of-band blocking 2003 MHz to 2399 MHz –5 dBm

Out-of-band blocking 2484 MHz to 2997 MHz –8 dBm

Out-of-band blocking 3000 MHz to 12.75 GHz –8 dBm

Intermodulation Wanted signal at 2402 MHz, –64 dBm. Two interferers at 2405

and 2408 MHz respectively, at the given power level –34 dBm

Spurious emissions,

30 MHz to 1000 MHz

Conducted measurement in a 50-Ωsingle-ended load. Suitable

for systems targeting compliance with EN 300 328, EN 300 440

class 2, FCC CFR47, Part 15 and ARIB STD-T-66 –71 dBm

Spurious emissions,

1 GHz to 12.75 GHz

Conducted measurement in a 50-Ωsingle-ended load. Suitable

for systems targeting compliance with EN 300 328, EN 300 440

class 2, FCC CFR47, Part 15 and ARIB STD-T-66 –62 dBm

RSSI dynamic range 70 dB

RSSI accuracy ±4 dB

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(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2

(Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan)

5.8 1-Mbps GFSK (Bluetooth low energy) – TX

RF performance is specified in a single ended 50-Ωreference plane at the antenna feeding point with Tc= 25°C,

VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Output power, highest setting 5 dBm

Output power, lowest setting –21 dBm

Spurious emission conducted

measurement(1)

f < 1 GHz, outside restricted bands –43 dBm

f < 1 GHz, restricted bands ETSI –65 dBm

f < 1 GHz, restricted bands FCC –76 dBm

f > 1 GHz, including harmonics –46 dBm

(1) Numbers given as I/C dB.

(2) X / Y, where X is +N MHz and Y is –N MHz.

(3) Excluding one exception at Fwanted / 2, per Bluetooth Specification.

5.9 2-Mbps GFSK (Bluetooth low energy) – RX

RF performance is specified in a single ended 50-Ωreference plane at the antenna feeding point with Tc= 25°C,

VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Receiver sensitivity Differential mode. Measured at the CC2650EM-5XD

SMA connector, BER = 10–3 –91.7 dBm

Receiver saturation Differential mode. Measured at the CC2650EM-5XD

SMA connector, BER = 10–3 4 dBm

Frequency error tolerance Difference between the incoming carrier frequency

and the internally generated carrier frequency –300 500 kHz

Data rate error tolerance Difference between incoming data rate and the

internally generated data rate –1000 1000 ppm

Co-channel rejection (1) Wanted signal at –67 dBm, modulated interferer in

channel,

BER = 10–3 –7 dB

Selectivity, ±2 MHz (1)

Wanted signal at –67 dBm, modulated interferer at

±2 MHz,

Image frequency is at –2 MHz

BER = 10–3

8 / 4(2) dB

Selectivity, ±4 MHz (1) Wanted signal at –67 dBm, modulated interferer at

±4 MHz,

BER = 10–3 31 / 26(2) dB

Selectivity, ±6 MHz (1) Wanted signal at –67 dBm, modulated interferer at

±6 MHz,

BER = 10–3 37 / 38(2) dB

Alternate channel rejection, ±7

MHz(1) Wanted signal at –67 dBm, modulated interferer at ≥

±7 MHz, BER = 10–3 37 / 36(2) dB

Selectivity, Image frequency(1) Wanted signal at –67 dBm, modulated interferer at

image frequency,

BER = 10–3 4 dB

Selectivity, Image frequency

±2 MHz(1)

Note that Image frequency + 2 MHz is the Co-

channel. Wanted signal at –67 dBm, modulated

interferer at ±2 MHz from image frequency,

BER = 10–3

–7 / 26(2) dB

Out-of-band blocking (3) 30 MHz to 2000 MHz –33 dBm

Out-of-band blocking 2003 MHz to 2399 MHz –15 dBm

Out-of-band blocking 2484 MHz to 2997 MHz –12 dBm

Out-of-band blocking 3000 MHz to 12.75 GHz –10 dBm

Intermodulation Wanted signal at 2402 MHz, –64 dBm. Two

interferers at 2405 and 2408 MHz respectively, at

the given power level –45 dBm

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(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2

(Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).

5.10 2-Mbps GFSK (Bluetooth low energy) – TX

RF performance is specified in a single ended 50-Ωreference plane at the antenna feeding point with Tc= 25°C,

VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Output power, highest setting Differential mode, delivered to a single-ended 50-Ωload

through a balun 5 dBm

Output power, highest setting Measured on CC2650EM-4XS, delivered to a single-ended

50-Ωload 2 dBm

Output power, lowest setting Delivered to a single-ended 50-Ωload through a balun –21 dBm

Spurious emission conducted

measurement(1)

f < 1 GHz, outside restricted bands –43 dBm

f < 1 GHz, restricted bands ETSI –65 dBm

f < 1 GHz, restricted bands FCC –76 dBm

f > 1 GHz, including harmonics –46 dBm

5.11 IEEE 802.15.4 (Offset Q-PSK DSSS, 250 kbps) – RX

RF performance is specified in a single ended 50-Ωreference plane at the antenna feeding point with Tc= 25°C,

VDDS = 3.0 V, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Receiver sensitivity PER = 1% –100 dBm

Receiver saturation PER = 1% +4 dBm

Adjacent channel rejection Wanted signal at –82 dBm, modulated interferer at ±5 MHz,

PER = 1% 39 dB

Alternate channel rejection Wanted signal at –82 dBm, modulated interferer at ±10 MHz,

PER = 1% 52 dB

Channel rejection, ±15 MHz or

Wanted signal at –82 dBm, undesired signal is IEEE 802.15.4

modulated channel, stepped through all channels 2405 to

2480 MHz, PER = 1% 57 dB

Blocking and desensitization,

5 MHz from upper band edge Wanted signal at –97 dBm (3 dB above the sensitivity level),

CW jammer, PER = 1% 64 dB

Blocking and desensitization,

10 MHz from upper band edge Wanted signal at –97 dBm (3 dB above the sensitivity level),

CW jammer, PER = 1% 64 dB

Blocking and desensitization,

20 MHz from upper band edge Wanted signal at –97 dBm (3 dB above the sensitivity level),

CW jammer, PER = 1% 65 dB

Blocking and desensitization,

50 MHz from upper band edge Wanted signal at –97 dBm (3 dB above the sensitivity level),

CW jammer, PER = 1% 68 dB

Blocking and desensitization,

–5 MHz from lower band edge Wanted signal at –97 dBm (3 dB above the sensitivity level),

CW jammer, PER = 1% 63 dB

Blocking and desensitization,

–10 MHz from lower band edge Wanted signal at –97 dBm (3 dB above the sensitivity level),

CW jammer, PER = 1% 63 dB

Blocking and desensitization,

–20 MHz from lower band edge Wanted signal at –97 dBm (3 dB above the sensitivity level),

CW jammer, PER = 1% 65 dB

Blocking and desensitization,

–50 MHz from lower band edge Wanted signal at –97 dBm (3 dB above the sensitivity level),

CW jammer, PER = 1% 67 dB

Spurious emissions,

30 MHz to 1000 MHz

Conducted measurement in a 50-Ωsingle-ended load.

Suitable for systems targeting compliance with EN 300 328,

EN 300 440 class 2, FCC CFR47, Part 15 and ARIB STD-T-

–71 dBm

Spurious emissions,

1 GHz to 12.75 GHz

Conducted measurement in a 50-Ωsingle-ended load.

Suitable for systems targeting compliance with EN 300 328,

EN 300 440 class 2, FCC CFR47, Part 15 and ARIB STD-T-

–62 dBm

Frequency error tolerance Difference between center frequency of the received RF

signal and local oscillator frequency >200 ppm

RSSI dynamic range 100 dB

RSSI accuracy ±4 dB

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(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2

(Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan)

5.12 IEEE 802.15.4 (Offset Q-PSK DSSS, 250 kbps) – TX

RF performance is specified in a single ended 50-Ωreference plane at the antenna feeding point with Tc= 25°C,

VDDS = 3.0 V, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Output power, highest setting 5 dBm

Output power, lowest setting –21 dBm

Error vector magnitude At maximum output power 2%

Spurious emission conducted

measurement(1)

f < 1 GHz, outside restricted bands –43

dBm

f < 1 GHz, restricted bands ETSI –65

f < 1 GHz, restricted bands FCC –76

f > 1 GHz, including harmonics –46

(1) Probing or otherwise stopping the XTAL while the DC-DC converter is enabled may cause permanent damage to the device.

(2) Includes initial tolerance of the crystal, drift over temperature, aging and frequency pulling due to incorrect load capacitance. As per

Bluetooth and IEEE 802.15.4 specification

(3) Kick-started based on a temperature and aging compensated RCOSC_HF using precharge injection

5.13 24-MHz Crystal Oscillator (XOSC_HF)(1)

Tc= 25°C, VDDS = 3.0 V, unless otherwise noted

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Crystal frequency 24 MHz

Crystal frequency tolerance(2) –40 40 ppm

Start-up time(3) 150 µs

5.14 32.768-kHz Crystal Oscillator (XOSC_LF)

Tc= 25°C, VDDS = 3.0 V, unless otherwise noted

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Crystal frequency 32.768 kHz

Crystal frequency tolerance, Bluetooth low

energy applications –250 250 ppm

(1) Accuracy relatively to the calibration source (XOSC_HF).

5.15 48-MHz RC Oscillator (RCOSC_HF)

Tc= 25°C, VDDS = 3.0 V, unless otherwise noted

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Frequency 48 MHz

Uncalibrated frequency accuracy ±1%

Calibrated frequency accuracy(1) ±0.25%

Start-up time 5 µs

5.16 32-kHz RC Oscillator (RCOSC_LF)

Tc= 25°C, VDDS = 3.0 V, unless otherwise noted

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Calibrated frequency 32.8 kHz

Temperature coefficient 50 ppm/°C

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(1) Using IEEE Std 1241™-2010 for terminology and test methods.

(2) Input signal scaled down internally before conversion, as if voltage range was 0 to 4.3 V.

(3) No missing codes. Positive DNL typically varies from +0.3 to +3.5 depending on device, see Figure 5-24.

(4) For a typical example, see Figure 5-25.

(5) Applied voltage must be within absolute maximum ratings (Section 5.1) at all times.

5.17 ADC Characteristics(1)

Tc= 25°C, VDDS = 3.0 V and voltage scaling enabled, unless otherwise noted

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Input voltage range 0 VDDS V

Resolution 12 Bits

Sample rate 200 ksps

Offset Internal 4.3-V equivalent reference(2) 2 LSB

Gain error Internal 4.3-V equivalent reference(2) 2.4 LSB

DNL(3) Differential nonlinearity >–1 LSB

INL(4) Integral nonlinearity ±3 LSB

ENOB Effective number of bits

Internal 4.3-V equivalent reference(2), 200 ksps,

9.6-kHz input tone 9.8

BitsVDDS as reference, 200 ksps, 9.6-kHz input tone 10

Internal 1.44-V reference, voltage scaling disabled,

32 samples average, 200 ksps, 300-Hz input tone 11.1

THD Total harmonic

distortion

Internal 4.3-V equivalent reference(2), 200 ksps,

9.6-kHz input tone –65

dBVDDS as reference, 200 ksps, 9.6-kHz input tone –69

Internal 1.44-V reference, voltage scaling disabled,

32 samples average, 200 ksps, 300-Hz input tone –71

SINAD

and SNDR Signal-to-noise and

distortion ratio

Internal 4.3-V equivalent reference(2), 200 ksps,

9.6-kHz input tone 60

dBVDDS as reference, 200 ksps, 9.6-kHz input tone 63

Internal 1.44-V reference, voltage scaling disabled,

32 samples average, 200 ksps, 300-Hz input tone 69

SFDR Spurious-free dynamic

range

Internal 4.3-V equivalent reference(2), 200 ksps,

9.6-kHz input tone 67

dBVDDS as reference, 200 ksps, 9.6-kHz input tone 72

Internal 1.44-V reference, voltage scaling disabled, 32

samples average, 200 ksps, 300-Hz input tone 73

Conversion time Serial conversion, time-to-output, 24-MHz clock 50 clock-

cycles

Current consumption Internal 4.3-V equivalent reference(2) 0.66 mA

Current consumption VDDS as reference 0.75 mA

Reference voltage

Equivalent fixed internal reference (input voltage

scaling enabled). For best accuracy, the ADC

conversion should be initiated through the TI-RTOS™

API in order to include the gain or offset compensation

factors stored in FCFG1.

4.3(2)(5) V

Reference voltage

Fixed internal reference (input voltage scaling

disabled). For best accuracy, the ADC conversion

should be initiated through the TI-RTOS API in order

to include the gain or offset compensation factors

stored in FCFG1. This value is derived from the scaled

value (4.3 V) as follows: Vref = 4.3 V × 1408 / 4095

1.48 V

Reference voltage VDDS as reference (Also known as RELATIVE) (input

voltage scaling enabled) VDDS V

Reference voltage VDDS as reference (Also known as RELATIVE) (input

voltage scaling disabled) VDDS /

2.82(5) V

Input Impedance 200 ksps, voltage scaling enabled. Capacitive input,

input impedance depends on sampling frequency and

sampling time >1 MΩ

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(1) Automatically compensated when using supplied driver libraries.

5.18 Temperature Sensor

Tc= 25°C, VDDS = 3.0 V, unless otherwise noted

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Resolution 4 °C

Range –40 85 °C

Accuracy ±5 °C

Supply voltage coefficient(1) 3.2 °C/V

5.19 Battery Monitor

Tc= 25°C, VDDS = 3.0 V, unless otherwise noted

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Resolution 50 mV

Range 1.8 3.8 V

Accuracy 13 mV

(1) Additionally the bias module needs to be enabled when running in standby mode.

5.20 Continuous Time Comparator

Tc= 25°C, VDDS = 3.0 V, unless otherwise noted

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Input voltage range 0 VDDS V

External reference voltage 0 VDDS V

Internal reference voltage DCOUPL as reference 1.27 V

Offset 3 mV

Hysteresis <2 mV

Decision time Step from –10 mV to +10 mV 0.72 µs

Current consumption when enabled(1) 8.6 µA

5.21 Low-Power Clocked Comparator

Tc= 25°C, VDDS = 3.0 V, unless otherwise noted

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Input voltage range 0 VDDS V

Clock frequency 32 kHz

Internal reference voltage, VDDS / 2 1.49 – 1.51 V

Internal reference voltage, VDDS / 3 1.01 – 1.03 V

Internal reference voltage, VDDS / 4 0.78 – 0.79 V

Internal reference voltage, DCOUPL / 1 1.25 – 1.28 V

Internal reference voltage, DCOUPL / 2 0.63 – 0.65 V

Internal reference voltage, DCOUPL / 3 0.42 – 0.44 V

Internal reference voltage, DCOUPL / 4 0.33 – 0.34 V

Offset <2 mV

Hysteresis <5 mV

Decision time Step from –50 mV to +50 mV <1 clock-cycle

Current consumption when enabled 362 nA

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(1) Additionally, the bias module must be enabled when running in standby mode.

5.22 Programmable Current Source

Tc= 25°C, VDDS = 3.0 V, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Current source programmable output range 0.25–20 µA

Resolution 0.25 µA

Current consumption(1) Including current source at maximum

programmable output 23 µA

(1) Each GPIO is referenced to a specific VDDS pin. See the technical reference manual listed in Section 8.3 for more details.

5.23 DC Characteristics

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

TA= 25°C, VDDS = 1.8 V

GPIO VOH at 8-mA load IOCURR = 2, high-drive GPIOs only 1.32 1.54 V

GPIO VOL at 8-mA load IOCURR = 2, high-drive GPIOs only 0.26 0.32 V

GPIO VOH at 4-mA load IOCURR = 1 1.32 1.58 V

GPIO VOL at 4-mA load IOCURR = 1 0.21 0.32 V

GPIO pullup current Input mode, pullup enabled, Vpad = 0 V 71.7 µA

GPIO pulldown current Input mode, pulldown enabled, Vpad = VDDS 21.1 µA

GPIO high/low input transition,

no hysteresis IH = 0, transition between reading 0 and reading 1 0.88 V

GPIO low-to-high input transition,

with hysteresis IH = 1, transition voltage for input read as 0 →1 1.07 V

GPIO high-to-low input transition,

with hysteresis IH = 1, transition voltage for input read as 1 →0 0.74 V

GPIO input hysteresis IH = 1, difference between 0 →1 and 1 →0 points 0.33 V

TA= 25°C, VDDS = 3.0 V

GPIO VOH at 8-mA load IOCURR = 2, high-drive GPIOs only 2.68 V

GPIO VOL at 8-mA load IOCURR = 2, high-drive GPIOs only 0.33 V

GPIO VOH at 4-mA load IOCURR = 1 2.72 V

GPIO VOL at 4-mA load IOCURR = 1 0.28 V

TA= 25°C, VDDS = 3.8 V

GPIO pullup current Input mode, pullup enabled, Vpad = 0 V 277 µA

GPIO pulldown current Input mode, pulldown enabled, Vpad = VDDS 113 µA

GPIO high/low input transition,

no hysteresis IH = 0, transition between reading 0 and reading 1 1.67 V

GPIO low-to-high input transition,

with hysteresis IH = 1, transition voltage for input read as 0 →1 1.94 V

GPIO high-to-low input transition,

with hysteresis IH = 1, transition voltage for input read as 1 →0 1.54 V

GPIO input hysteresis IH = 1, difference between 0 →1 and 1 →0 points 0.4 V

TA= 25°C

VIH Lowest GPIO input voltage reliably interpreted as a

«High» 0.8 VDDS(1)

VIL Highest GPIO input voltage reliably interpreted as a

«Low» 0.2 VDDS(1)

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(1) °C/W = degrees Celsius per watt.

(2) These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RΘJC] value, which is based on a

JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these

EIA/JEDEC standards:

• JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)

• JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages

• JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages

• JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements

Power dissipation of 2 W and an ambient temperature of 70ºC is assumed.

(3) m/s = meters per second.

5.24 Thermal Resistance Characteristics for MOH Package

NAME DESCRIPTION °C/W(1) (2) AIR FLOW (m/s)(3)

RΘJC Junction-to-case 20.0

RΘJB Junction-to-board 15.3

RΘJA Junction-to-free air 29.6 0

RΘJMA Junction-to-moving air 25.0 1

PsiJT Junction-to-package top 8.8 0

PsiJB Junction-to-board 14.8 0

(1) For smaller coin cell batteries, with high worst-case end-of-life equivalent source resistance, a 22-µF VDDS input capacitor (see

Section 7.1.1) must be used to ensure compliance with this slew rate.

(2) Applications using RCOSC_LF as sleep timer must also consider the drift in frequency caused by a change in temperature (see

Section 5.16).

(3) TA= –40°C to +85°C, VDDS = 1.7 V to 3.8 V, unless otherwise noted.

(4) Tc= 25°C, VDDS = 3.0 V, unless otherwise noted. Device operating as SLAVE. For SSI MASTER operation, see Section 5.26.

(5) Refer to SSI timing diagrams Figure 5-1,Figure 5-2, and Figure 5-3.

5.25 Timing Requirements

MIN NOM MAX UNIT

Rising supply-voltage slew rate 0 100 mV/µs

Falling supply-voltage slew rate 0 20 mV/µs

Falling supply-voltage slew rate, with low-power flash settings(1) 3 mV/µs

Positive temperature gradient in standby(2) No limitation for negative

temperature gradient, or

outside standby mode 5 °C/s

CONTROL INPUT AC CHARACTERISTICS(3)

RESET_N low duration 1 µs

SYNCHRONOUS SERIAL INTERFACE (SSI) (4)

S1 (SLAVE) (5) tclk_per SSIClk period 12 65024 system

clocks

S2 (5) tclk_high SSIClk high time 0.5 tclk_per

S3(5) tclk_low SSIClk low time 0.5 tclk_per

(1) Device operating as MASTER. For SSI SLAVE operation, see Section 5.25.

(2) Refer to SSI timing diagrams Figure 5-1,Figure 5-2, and Figure 5-3.

5.26 Switching Characteristics

Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, VDDS = 3.0 V, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

WAKEUP AND TIMING

Idle →Active 14 µs

Standby →Active 151 µs

Shutdown →Active 1015 µs

SYNCHRONOUS SERIAL INTERFACE (SSI) (1)

S1 (TX only)(2) tclk_per (SSIClk period) One-way communication to SLAVE 4 65024 system

clocks

S1 (TX and RX)(2) tclk_per (SSIClk period) Normal duplex operation 8 65024 system

clocks

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SSIClk

SSIFss

SSITx

SSIRx

MSB LSB

8-bit control

4 to 16 bits output data

SSIClk

SSIFss

SSITx

SSIRx MSB LSB

4 to 16 bits

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Switching Characteristics (continued)

Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, VDDS = 3.0 V, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

S2 (2) tclk_high (SSIClk high time) 0.5 tclk_per

S3 (2) tclk_low(SSIClk low time) 0.5 tclk_per

Figure 5-1. SSI Timing for TI Frame Format (FRF = 01), Single Transfer Timing Measurement

Figure 5-2. SSI Timing for MICROWIRE Frame Format (FRF = 10), Single Transfer

PRODUCTPREVIEW

SSIClk

(SPO = 1)

SSITx

(Master)

SSIRx

(Slave) LSB

SSIClk

(SPO = 0)

SSIFss

LSB

MSB

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Figure 5-3. SSI Timing for SPI Frame Format (FRF = 00), With SPH = 1

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Frequency (MHz)

Sensitivity Level (dBm)

2400 2410 2420 2430 2440 2450 2460 2470 2480

-101

-100

-99

-98

-97

-96

-95

D008

Sensitivity

Frequency (MHz)

Sensitivity Level (dBm)

2400 2410 2420 2430 2440 2450 2460 2470 2480

-99

-98.5

-98

-97.5

-97

-96.5

-96

-95.5

-95

D009

Sensitivity

VDDS (V)

Sensitivity (dBm)

1.8 2.3 2.8 3.3 3.8

-101

-100

-99

-98

-97

-96

-95

D006

BLE Sensitivity

VDDS (V)

Sensitivity (dBm)

1.9 2.4 2.9 3.4 3.8

-101

-100

-99

-98

-97

-96

-95

D007

IEEE 802.15.4 Sensitivity

Temperature (qC)

Sensitivity (dBm)

-40 -30 -20 -10 0 10 20 30 40 50 60 70 80

-99

-98

-97

-96

-95

-94

-93

D004

Sensitivity

Temperature (qC)

Sensitivity (dBm)

-40 -30 -20 -10 0 10 20 30 40 50 60 70 80

-103

-102

-101

-100

-99

-98

-97

-96

-95

D005

Sensitivity

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5.27 Typical Characteristics

Figure 5-4. Bluetooth low energy Sensitivity vs Temperature Figure 5-5. IEEE 802.15.4 Sensitivity vs Temperature

Figure 5-6. Bluetooth low energy Sensitivity vs Supply Voltage

(VDDS) Figure 5-7. IEEE 802.15.4 Sensitivity vs Supply Voltage (VDDS)

Figure 5-8. IEEE 802.15.4 Sensitivity vs Channel Frequency Figure 5-9. Bluetooth low energy Sensitivity vs Channel

Frequency

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Voltage (V)

Current Consumption (mA)

1.75 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 4.25 4.5

4.5

5.5

6.5

7.5

8.5

9.5

10.5

D014

Temperature (qC)

RX Current (mA)

-40 -30 -20 -10 0 10 20 30 40 50 60 70 80

5.5

5.6

5.7

5.8

5.9

6.1

6.2

6.3

6.4

6.5

6.6

6.7

6.8

6.9

D015

RX Current

Frequency (MHz)

Output Power (dBm)

2400 2410 2420 2430 2440 2450 2460 2470 2480

-1

D012

5-dBm setting

VDDS (V)

TX Current (mA)

1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8

D013

5-dBm Setting

Temperature (qC)

Output Power (dBm)

-40 -30 -20 -10 0 10 20 30 40 50 60 70 80

D010

5-dBm Setting

VDDS (V)

Output power (dBm)

1.8 2.3 2.8 3.3 3.8

D011

5-dBm Setting

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Typical Characteristics (continued)

Figure 5-10. TX Output Power vs Temperature Figure 5-11. TX Output Power vs Supply Voltage (VDDS)

Figure 5-12. TX Output Power

vs Channel Frequency Figure 5-13. TX Current Consumption

vs Supply Voltage (VDDS)

Figure 5-14. RX Mode Current vs Supply Voltage (VDDS) Figure 5-15. RX Mode Current Consumption vs Temperature

PRODUCTPREVIEW

Input Frequency (Hz)

Effective Number of Bits

200300 500 1000 2000 5000 10000 20000 100000

9.4

9.6

9.8

10.2

10.4

10.6

10.8

11.2

11.4

D009

Fs= 200 kHz, No Averaging

Fs= 200 kHz, 32 samples averaging

VDDS (V)

ADC Code

1.8 2.3 2.8 3.3 3.8

1004.8

1005

1005.2

1005.4

1005.6

1005.8

1006

1006.2

1006.4

D012

VDDS (V)

Current Consumption (mA)

1.8 2.3 2.8 3.3 3.8

2.5

3.5

4.5

D007

Active Mode Current

Temperature (qC)

Current (uA)

-20 -10 0 10 20 30 40 50 60 70 80

0.5

1.5

2.5

3.5

D008

Standby Mode Current

Temperature (qC)

Active Mode Current Consumpstion (mA)

-40 -30 -20 -10 0 10 20 30 40 50 60 70 80

2.85

2.9

2.95

3.05

3.1

D006

Active Mode Current

Temperature (qC)

TX Current (mA)

-40 -30 -20 -10 0 10 20 30 40 50 60 70 80

D016

5-dBm Setting

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Typical Characteristics (continued)

Figure 5-16. TX Mode Current Consumption vs Temperature Figure 5-17. Active Mode (MCU Running, No Peripherals)

Current Consumption vs Temperature

Figure 5-18. Active Mode (MCU Running, No Peripherals)

Current Consumption vs Supply Voltage (VDDS) Figure 5-19. Standby Mode Current Consumption

With RCOSC RTC vs Temperature

Figure 5-20. SoC ADC Effective Number of Bits vs Input

Frequency (Internal Reference, No Scaling) Figure 5-21. SoC ADC Output vs Supply Voltage (Fixed Input,

Internal Reference, No Scaling)

PRODUCTPREVIEW

ADC Code

DNL

200

400

600

800

1000

1200

1400

1600

1800

2000

2200

2400

2600

2800

3000

3200

3400

3600

3800

4000

4200

-1.5

-1

-0.5

0.5

1.5

2.5

3.5

D010

Temperature (qC)

ADC Code

-40 -30 -20 -10 0 10 20 30 40 50 60 70 80

1004.5

1005

1005.5

1006

1006.5

1007

1007.5

D013

Sampling Frequency (Hz)

ENOB

9.6

9.7

9.8

9.9

10.1

10.2

10.3

10.4

10.5

1k 10k 100k 200k

D009A

ENOB Internal Reference (No Averaging)

ENOB Internal Reference (32 Samples Averaging)

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Typical Characteristics (continued)

Figure 5-22. SoC ADC Output vs Temperature (Fixed Input,

Internal Reference, No Scaling) Figure 5-23. SoC ADC ENOB vs Sampling Frequency

(Input Frequency = FS / 10)

Figure 5-24. SoC ADC DNL vs ADC Code (Internal Reference, No Scaling)

PRODUCTPREVIEW

ADC Code

INL

0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200

-4

-3

-2

-1

D011

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Typical Characteristics (continued)

Figure 5-25. SoC ADC INL vs ADC Code (Internal Reference, No Scaling)

PRODUCTPREVIEW

Main CPU:

128KB

Flash

Sensor Controller

cJTAG

20KB

SRAM

ROM

ARM®

Cortex®-M3

DC/DC converter

RF core

ARM®

Cortex®-M0

DSP Modem

4KB

SRAM

ROM

Sensor Controller Engine

2× Analog Comparators

12-bit ADC, 200ks/s

Constant Current Source

SPI / I2C Digital Sensor IF

2KB SRAM

Time to Digital Converter

General Peripherals / Modules

4× 32-bit Timers

2× SSI (SPI, µWire,TI)

Watchdog Timer

Temp. / Batt. Monitor

RTC

I2C

UART

I2S

10 / 15 / 31 GPIOs

AES

32 ch. µDMA

ADC

Digital PLL

SimpleLinkTM CC2650MOD

Wireless MCU Module

TRNG

8KB

Cache

24MHz Crystal

Oscillator

32.768kHz

Crystal

Oscillator RF Balun

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6 Detailed Description

6.1 Overview

Section 6.2 shows the core modules of the CC2650MOD device.

6.2 Functional Block Diagram

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6.3 Main CPU

The SimpleLink CC2650MOD Wireless MCU contains an ARM Cortex-M3 (CM3) 32-bit CPU, which runs

the application and the higher layers of the protocol stack.

The CM3 processor provides a high-performance, low-cost platform that meets the system requirements

of minimal memory implementation, and low-power consumption, while delivering outstanding

computational performance and exceptional system response to interrupts.

CM3 features include:

• 32-bit ARM Cortex-M3 architecture optimized for small-footprint embedded applications

• Outstanding processing performance combined with fast interrupt handling

• ARM Thumb®-2 mixed 16- and 32 bit instruction set delivers the high performance expected of a 32-bit

ARM core in a compact memory size usually associated with 8- and 16-bit devices, typically in the

range of a few kilobytes of memory for microcontroller-class applications:

– Single-cycle multiply instruction and hardware divide

– Atomic bit manipulation (bit-banding), delivering maximum memory use and streamlined peripheral

control

– Unaligned data access, enabling data to be efficiently packed into memory

• Fast code execution permits slower processor clock or increases sleep mode time

• Harvard architecture characterized by separate buses for instruction and data

• Efficient processor core, system, and memories

• Hardware division and fast digital-signal-processing oriented multiply accumulate

• Saturating arithmetic for signal processing

• Deterministic, high-performance interrupt handling for time-critical applications

• Enhanced system debug with extensive breakpoint and trace capabilities

• Serial wire trace reduces the number of pins required for debugging and tracing

• Migration from the ARM7™ processor family for better performance and power efficiency

• Optimized for single-cycle flash memory use

• Ultra-low power consumption with integrated sleep modes

• 1.25 DMIPS per MHz

6.4 RF Core

The RF Core contains an ARM®Cortex®-M0 processor that interfaces the analog RF and base-band

circuitries, handles data to and from the system side, and assembles the information bits in a given packet

structure. The RF core offers a high level, command-based API to the main CPU.

The RF core is capable of autonomously handling the time-critical aspects of the radio protocols (802.15.4

RF4CE and ZigBee, Bluetooth low energy) thus offloading the main CPU and leaving more resources for

the user application.

The RF core has a dedicated 4KB SRAM block and runs initially from separate ROM memory. The ARM

Cortex-M0 processor is not programmable by customers.

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6.5 Sensor Controller

The Sensor Controller contains circuitry that can be selectively enabled in standby mode. The peripherals

in this domain may be controlled by the Sensor Controller Engine, which is a proprietary power-optimized

CPU. This CPU can read and monitor sensors or perform other tasks autonomously, thereby significantly

reducing power consumption and offloading the main CM3 CPU.

The Sensor Controller is set up using a PC-based configuration tool, called Sensor Controller Studio, and

typical use cases may be (but are not limited to):

• Analog sensors using integrated ADC

• Digital sensors using GPIOs and bit-banged I2C or SPI

• UART communication for sensor reading or debugging

• Capacitive sensing

• Waveform generation

• Pulse counting

• Keyboard scan

• Quadrature decoder for polling rotation sensors

• Oscillator calibration

The peripherals in the Sensor Controller include the following:

• The low-power clocked comparator can be used to wake the device from any state in which the

comparator is active. A configurable internal reference can be used in conjunction with the comparator.

The output of the comparator can also be used to trigger an interrupt or the ADC.

• Capacitive sensing functionality is implemented through the use of a constant current source, a time-

to-digital converter, and a comparator. The continuous time comparator in this block can also be used

as a higher-accuracy alternative to the low-power clocked comparator. The Sensor Controller will take

care of baseline tracking, hysteresis, filtering and other related functions.

• The ADC is a 12-bit, 200 ksamples/s ADC with eight inputs and a built-in voltage reference. The ADC

can be triggered by many different sources, including timers, I/O pins, software, the analog

comparator, and the RTC.

• The Sensor Controller also includes a SPI/I2C digital interface.

• The analog modules can be connected to up to eight different GPIOs.

The peripherals in the Sensor Controller can also be controlled from the main application processor.

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(1) Up to 13 pins can be connected to the Sensor Controller. Up to eight

of these pins can be connected to analog modules

Table 6-1. GPIOs Connected to the Sensor Controller(1)

ANALOG CAPABLE 16.9 × 11 MOH DIO NUMBER

Y 14

Y 13

Y 12

Y 11

Y 9

Y 10

Y 8

Y 7

N 4

N 3

N 2

N 1

N 0

6.6 Memory

The flash memory provides nonvolatile storage for code and data. The flash memory is in-system

programmable.

The SRAM (static RAM) can be used for both storage of data and execution of code and is split into two

4KB blocks and two 6KB blocks. Retention of the RAM contents in standby mode can be enabled or

disabled individually for each block to minimize power consumption. In addition, if flash cache is disabled,

the 8KB cache can be used as a general-purpose RAM.

The ROM provides preprogrammed embedded TI-RTOS kernel, Driverlib and lower layer protocol stack

software (802.15.4 MAC and Bluetooth low energy Controller). The ROM also contains a bootloader that

can be used to reprogram the device using SPI or UART.

6.7 Debug

The on-chip debug support is done through a dedicated cJTAG (IEEE 1149.7) or JTAG (IEEE 1149.1)

interface.

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(1) Not including RTOS overhead

(2) The Brown Out Detector is disabled between recharge periods in STANDBY. Lowering the supply voltage below the BOD threshold

between two recharge periods while in STANDBY may cause the BOD to lock the device upon wake-up until a Reset or POR releases

it. To avoid this, it is recommended that STANDBY mode is avoided if there is a risk that the supply voltage (VDDS) may drop below the

specified operating voltage range. For the same reason, it is also good practice to ensure that a power cycling operation, such as a

battery replacement, triggers a Power-on-reset by ensuring that the VDDS decoupling network is fully depleted before applying supply

voltage again (for example, inserting new batteries).

6.8 Power Management

To minimize power consumption, the CC2650MOD device supports a number of power modes and power

management features (see Table 6-2).

Table 6-2. Power Modes

MODE SOFTWARE CONFIGURABLE POWER MODES RESET PIN

HELD

ACTIVE IDLE STANDBY SHUTDOWN

CPU Active Off Off Off Off

Flash On Available Off Off Off

SRAM On On On Off Off

Radio Available Available Off Off Off

Supply System On On Duty Cycled Off Off

Current 1.45 mA + 31 µA/MHz 550 µA 1 µA 0.15 µA 0.1 µA

Wake-up time to CPU active(1) – 14 µs 151 µs 1015 µs 1015 µs

SRAM retention Full Full Full No No

High-speed clock XOSC_HF or

RCOSC_HF XOSC_HF or

RCOSC_HF Off Off Off

Low-speed clock XOSC_LF or

RCOSC_LF XOSC_LF or

RCOSC_LF Off Off

Peripherals Available Available Off Off Off

Sensor Controller Available Available Available Off Off

Wake up on RTC Available Available Available Off Off

Wake up on pin edge Available Available Available Available Off

Wake up on reset pin Available Available Available Available Available

Brown Out Detector (BOD) Active Active Duty Cycled(2) Off N/A

Power On Reset (POR) Active Active Active Active N/A

In active mode, the application CM3 CPU is actively executing code. Active mode provides normal

operation of the processor and all of the peripherals that are currently enabled. The system clock can be

any available clock source (see Table 6-2).

In idle mode, all active peripherals can be clocked, but the Application CPU core and memory are not

clocked and no code is executed. Any interrupt event will bring the processor back into active mode.

In standby mode, only the always-on domain (AON) is active. An external wake event, RTC event, or

sensor-controller event is required to bring the device back to active mode. MCU peripherals with retention

do not need to be reconfigured when waking up again, and the CPU continues execution from where it

went into standby mode. All GPIOs are latched in standby mode.

In shutdown mode, the device is turned off entirely, including the AON domain and the Sensor Controller.

The I/Os are latched with the value they had before entering shutdown mode. A change of state on any

I/O pin, defined as a wake from Shutdown pin, wakes up the device and functions as a reset trigger. The

CPU can differentiate between a reset in this way, a reset-by-reset pin, or a power-on-reset by reading the

reset status register. The only state retained in this mode is the latched I/O state and the Flash memory

contents.

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The Sensor Controller is an autonomous processor that can control the peripherals in the Sensor

Controller independently of the main CPU, which means that the main CPU does not have to wake up, for

example, to execute an ADC sample or poll a digital sensor over SPI. The main CPU saves both current

and wake-up time that would otherwise be wasted. The Sensor Controller Studio enables the user to

configure the sensor controller and choose which peripherals are controlled and which conditions wake up

the main CPU.

6.9 Clock Systems

The CC2650MOD device supports two external and two internal clock sources.

A 24-MHz crystal is required as the frequency reference for the radio. This signal is doubled internally to

create a 48-MHz clock.

The 32-kHz crystal is optional. Bluetooth low energy requires a slow-speed clock with better than

±500-ppm accuracy if the device is to enter any sleep mode while maintaining a connection. The internal

32-kHz RC oscillator can in some use cases be compensated to meet the requirements. The low-speed

crystal oscillator is designed for use with a 32-kHz watch-type crystal.

The internal high-speed oscillator (48 MHz) can be used as a clock source for the CPU subsystem.

The internal low-speed oscillator (32.768 kHz) can be used as a reference if the low-power crystal

oscillator is not used.

The 32-kHz clock source can be used as external clocking reference through GPIO.

6.10 General Peripherals and Modules

The I/O controller controls the digital I/O pins and contains multiplexer circuitry to allow a set of peripherals

to be assigned to I/O pins in a flexible manner. All digital I/Os are interrupt and wake-up capable, have a

programmable pullup and pulldown function and can generate an interrupt on a negative or positive edge

(configurable). When configured as an output, pins can function as either push-pull or open-drain. Five

GPIOs have high-drive capabilities (marked in bold in Section 4).

The SSIs are synchronous serial interfaces that are compatible with SPI, MICROWIRE, and TI's

synchronous serial interfaces. The SSIs support both SPI master and slave up to 4 MHz.

The UART implements a universal asynchronous receiver/transmitter function. It supports flexible baud-

rate generation up to a maximum of 3 Mbps .

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Timer 0 is a general-purpose timer module (GPTM), which provides two 16-bit timers. The GPTM can be

configured to operate as a single 32-bit timer, dual 16-bit timers or as a PWM module.

Timer 1, Timer 2, and Timer 3 are also GPTMs. Each of these timers is functionally equivalent to Timer 0.

In addition to these four timers, the RF core has its own timer to handle timing for RF protocols; the RF

timer can be synchronized to the RTC.

The I2C interface is used to communicate with devices compatible with the I2C standard. The I2C interface

is capable of 100-kHz and 400-kHz operation, and can serve as both I2C master and I2C slave.

The TRNG module provides a true, nondeterministic noise source for the purpose of generating keys,

initialization vectors (IVs), and other random number requirements. The TRNG is built on 24 ring

oscillators that create unpredictable output to feed a complex nonlinear combinatorial circuit.

The watchdog timer is used to regain control if the system fails due to a software error after an external

device fails to respond as expected. The watchdog timer can generate an interrupt or a reset when a

predefined time-out value is reached.

The device includes a direct memory access (µDMA) controller. The µDMA controller provides a way to

offload data transfer tasks from the CM3 CPU, allowing for more efficient use of the processor and the

available bus bandwidth. The µDMA controller can perform transfer between memory and peripherals. The

µDMA controller has dedicated channels for each supported on-chip module and can be programmed to

automatically perform transfers between peripherals and memory as the peripheral is ready to transfer

more data. Some features of the µDMA controller include the following (this is not an exhaustive list):

• Highly flexible and configurable channel operation of up to 32 channels

• Transfer modes: memory-to-memory, memory-to-peripheral, peripheral-to-memory, and peripheral-to-

peripheral

• Data sizes of 8, 16, and 32 bits

The AON domain contains circuitry that is always enabled, except for in Shutdown (where the digital

supply is off). This circuitry includes the following:

• The RTC can be used to wake the device from any state where it is active. The RTC contains three

compare and one capture registers. With software support, the RTC can be used for clock and

calendar operation. The RTC is clocked from the 32-kHz RC oscillator or crystal. The RTC can also be

compensated to tick at the correct frequency even when the internal 32-kHz RC oscillator is used

instead of a crystal.

• The battery monitor and temperature sensor are accessible by software and give a battery status

indication as well as a coarse temperature measure.

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6.11 System Architecture

Depending on the product configuration, CC26xx can function either as a Wireless Network Processor

(WNP—an IC running the wireless protocol stack, with the application running on a separate MCU), or as

a System-on-Chip (SoC), with the application and protocol stack running on the ARM CM3 core inside the

device.

In the first case, the external host MCU communicates with the device using SPI or UART. In the second

case, the application must be written according to the application framework supplied with the wireless

protocol stack.

6.12 Certification

The CC2650MODA module is certified to the standards listed in Table 6-3 (with IDs where applicable):

Table 6-3. CC2650MODA List of Certifications

Regulatory Body Specification ID (if applicable)

FCC (USA) Part 15C:2015+MPE FCC 1.1307 RF Exposure (Bluetooth)FCC ID: ZAT26M1

Part 15C:2015+MPE FCC 1.1307 RF Exposure (802.15.4)

IC (Canada) RSS-247 (Bluetooth)ID: 451H-26M1

RSS-247 (802.15.4)

ETSI/CE (Europe)

EN300328 v1.9.1 (Bluetooth)

EN300328 v1.9.1 (802.15.4)

IEC/EN62479:Ver 2010 (MPE) (replacing EN50371)

EN301489-1 v1.9.2:2011

EN301489-3 v1.6.1:2013

EN301489-17 v2.2.1:2012 (EMC)

EN55022:2010+AC:2011

EN55024:2011

EN60950-1: A2/2013

Japan MIC JRF-STD-66

JATE

6.12.1 Federal Communications Commission Statement

You are cautioned that changes or modifications not expressly approved by the part responsible for

compliance could void the user’s authority to operate the equipment.

This device complies with Part 15 of the FCC Rules. Operation is subject to the following two

conditions:

1. This device may not cause harmful interference and

2. This device must accept any interference received, including interference that may cause undesired

operation of the device.

FCC RF Radiation Exposure Statement:

This equipment complies with FCC radiation exposure limits set forth for an uncontrolled environment. End

users must follow the specific operating instructions for satisfying RF exposure limits. This transmitter

must not be colocated or operating in conjunction with any other antenna or transmitter.

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6.12.2 Canada, Industry Canada (IC)

This device complies with Industry Canada licence-exempt RSS standard(s).

Operation is subject to the following two conditions:

1. This device may not cause interference, and

2. This device must accept any interference, including interference that may cause undesired operation of

the device

Le présent appareil est conforme aux CNR d'Industrie Canada applicables aux appareils radio

exempts de licence

L'exploitation est autorisée aux deux conditions suivantes:

1. l'appareil ne doit pas produire de brouillage, et

2. l'utilisateur de l'appareil doit accepter tout brouillage radioélectrique subi, même si le brouillage est

susceptible d'en compromettre le fonctionnement.

IC RF Radiation Exposure Statement:

To comply with IC RF exposure requirements, this device and its antenna must not be co-located or

operating in conjunction with any other antenna or transmitter.

Pour se conformer aux exigences de conformité RF canadienne l'exposition, cet appareil et son antenne

ne doivent pas étre co-localisés ou fonctionnant en conjonction avec une autre antenne ou transmetteur.

6.13 End Product Labeling

This module is designed to comply with the FCC statement, FCC ID : ZAT26M1. The host system using

this module must display a visible label indicating the following text:

"Contains FCC ID: ZAT26M1"

This module is designed to comply with the IC statement, IC : 451H-26M1. The host system using this

module must display a visible label indicating the following text:

"Contains IC: 451H-26M1"

6.14 Manual Information to the End User

The OEM integrator has to be aware not to provide information to the end user regarding how to install or

remove this RF module in the user’s manual of the end product which integrates this module.

The end user manual shall include all required regulatory information/warning as shown in this manual.

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nReset

JTAG-TCK

JTAG-TMS

DIO0

DIO1

DIO2

DIO3

DIO4

DIO5

DIO6

DIO7

DIO8

DIO9

DIO10

DIO11

DIO12

DIO13

DIO14

VDDS

CC2650MODAMOH

NC_2 2

DIO_0

DIO_1

DIO_2

DIO_3

DIO_4

DIO_5/JTAG_TDO

DIO_6/JTAG_TDI

DIO_7

DIO_8

DIO_9

DIO_10

DIO_11

DIO_12

DIO_13

DIO_14

VDDS 22

nRESET

JTAG_TMSC

9JTAG_TCKC

VDDS 23

NC_24 24

GND

EGP 26

EGP 27

EGP 28

EGP 29

R28

100k

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7 Application, Implementation, and Layout

NOTE

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI's customers are

responsible for determining suitability of components for their purposes. Customers should

validate and test their design implementation to confirm system functionality.

7.1 Application Information

7.1.1 Typical Application Circuit

No external components are required for the operation of the CC2650MOD device. Figure 7-1 shows the

application circuit.

Figure 7-1. CC2650MOD Application Circuit

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Wireless MCU

DEVICE FAMILY

PREFIX

CC2650 MOD

X = Experimental device

Blank = Qualified device

MOH

ROM version 1

Flash = 128KB

DEVICE

PACKAGE DESIGNATOR

MOH = 29-pin Module

MOD = Module

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8 Device and Documentation Support

8.1 Device Nomenclature

To designate the stages in the product development cycle, TI assigns prefixes to all part numbers and/or

date-code. Each device has one of three prefixes/identifications: X, P, or null (no prefix) (for example,

CC2650MOD is in production; therefore, no prefix/identification is assigned).

Device development evolutionary flow:

XExperimental device that is not necessarily representative of the final device's electrical

specifications and may not use production assembly flow.

PPrototype device that is not necessarily the final silicon die and may not necessarily meet

final electrical specifications.

null Production version of the silicon die that is fully qualified.

Production devices have been characterized fully, and the quality and reliability of the device have been

demonstrated fully. TI's standard warranty applies.

Predictions show that prototype devices (X or P) have a greater failure rate than the standard production

devices. Texas Instruments recommends that these devices not be used in any production system

because their expected end-use failure rate still is undefined. Only qualified production devices are to be

used.

TI device nomenclature also includes a suffix with the device family name. This suffix indicates the

package type (for example, MOH).

For orderable part numbers of CC2650MOD devices in the MOH package type, see the Package Option

Addendum of this document, the TI website (www.ti.com), or contact your TI sales representative.

Figure 8-1. Device Nomenclature

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8.2 Tools and Software

TI offers an extensive line of development tools, including tools to evaluate the performance of the

processors, generate code, develop algorithm implementations, and fully integrate and debug software

and hardware modules.

The following products support development of the CC2650MOD device applications:

Software Tools:

SmartRF Studio 7:

SmartRF Studio is a PC application that helps designers of radio systems to easily evaluate the RF-IC at

an early stage in the design process.

• Test functions for sending and receiving radio packets, continuous wave transmit and receive

• Evaluate RF performance on custom boards by wiring it to a supported evaluation board or debugger

• Can also be used without any hardware, but then only to generate, edit and export radio configuration

settings

• Can be used in combination with several development kits for TI's CCxxxx RF-ICs

Sensor Controller Studio:

Sensor Controller Studio provides a development environment for the CC26xx Sensor Controller. The

Sensor Controller is a proprietary, power-optimized CPU in the CC26xx, which can perform simple

background tasks autonomously and independent of the System CPU state.

• Allows for Sensor Controller task algorithms to be implemented using a C-like programming language

• Outputs a Sensor Controller Interface driver, which incorporates the generated Sensor Controller

machine code and associated definitions

• Allows for rapid development by using the integrated Sensor Controller task testing and debugging

functionality. This allows for live visualization of sensor data and algorithm verification.

IDEs and Compilers:

Code Composer Studio:

• Integrated development environment with project management tools and editor

• Code Composer Studio (CCS) 6.1 and later has built-in support for the CC26xx device family

• Best support for XDS debuggers; XDS100v3, XDS110 and XDS200

• High integration with TI-RTOS with support for TI-RTOS Object View

IAR Embedded Workbench for ARM

• Integrated development environment with project management tools and editor

• IAR EWARM 7.30.3 and later has built-in support for the CC26xx device family

• Broad debugger support, supporting XDS100v3, XDS200, IAR I-Jet and Segger J-Link

• Integrated development environment with project management tools and editor

• RTOS plugin is available for TI-RTOS

For a complete listing of development-support tools for the CC2650MOD platform, visit the Texas

Instruments website at www.ti.com. For information on pricing and availability, contact the nearest TI field

sales office or authorized distributor.

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8.3 Documentation Support

The following documents describe the CC2650MOD device. Copies of these documents are available on

the Internet at www.ti.com.

CC26xx SimpleLink™ Wireless MCU Technical Reference Manual

CC26xx SimpleLink™ Wireless MCU Errata

8.3.1 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the

respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views;

see TI's Terms of Use.

TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster

collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge,

explore ideas and help solve problems with fellow engineers.

TI Embedded Processors Wiki Texas Instruments Embedded Processors Wiki. Established to help

developers get started with Embedded Processors from Texas Instruments and to foster

innovation and growth of general knowledge about the hardware and software surrounding

these devices.

8.4 Texas Instruments Low-Power RF Website

TI's Low-Power RF website has all the latest products, application and design notes, FAQ section, news

and events updates. Go to www.ti.com/lprf.

8.5 Low-Power RF eNewsletter

The Low-Power RF eNewsletter is up-to-date on new products, news releases, developers’ news, and

other news and events associated with low-power RF products from TI. The Low-Power RF eNewsletter

articles include links to get more online information.

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8.6 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the

respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views;

see TI's Terms of Use.

TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster

collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge,

explore ideas and help solve problems with fellow engineers.

TI Embedded Processors Wiki Texas Instruments Embedded Processors Wiki. Established to help

developers get started with Embedded Processors from Texas Instruments and to foster

innovation and growth of general knowledge about the hardware and software surrounding

these devices.

Low-Power RF Online Community Wireless Connectivity Section of the TI E2E Support Community

• Forums, videos, and blogs

• RF design help

• E2E interaction

Join here.

Low-Power RF Developer Network Texas Instruments has launched an extensive network of low-power

RF development partners to help customers speed up their application development. The

network consists of recommended companies, RF consultants, and independent design

houses that provide a series of hardware module products and design services, including:

• RF circuit, low-power RF, and ZigBee design services

• Low-power RF and ZigBee module solutions and development tools

• RF certification services and RF circuit manufacturing

For help with modules, engineering services or development tools:

Search the Low-Power RF Developer Network to find a suitable partner.

www.ti.com/lprfnetwork

8.7 Additional Information

Texas Instruments offers a wide selection of cost-effective, low-power RF solutions for proprietary and

standard-based wireless applications for use in industrial and consumer applications. The selection

includes RF transceivers, RF transmitters, RF front ends, and Systems-on-Chips as well as various

software solutions for the sub-1-GHz and 2.4-GHz frequency bands.

In addition, Texas Instruments provides a large selection of support collateral such as development tools,

technical documentation, reference designs, application expertise, customer support, third-party and

university programs.

The Low-Power RF E2E Online Community provides technical support forums, videos and blogs, and the

chance to interact with engineers from all over the world.

With a broad selection of product solutions, end-application possibilities, and a range of technical support,

Texas Instruments offers the broadest low-power RF portfolio.

8.8 Trademarks

IAR Embedded Workbench is a registered trademark of IAR Systems AB.

SmartRF, Code Composer Studio, SimpleLink, TI-RTOS, E2E are trademarks of Texas Instruments.

ARM7 is a trademark of ARM Limited.

ARM, Cortex are registered trademarks of ARM Limited (or its subsidiaries).

ARM Thumb is a registered trademark of ARM Limited.

Bluetooth is a registered trademark of Bluetooth SIG, Inc.

CoreMark is a registered trademark of Embedded Microprocessor Benchmark Consortium.

IEEE Std 1241 is a trademark of Institute of Electrical and Electronics Engineers, Incorporated.

ZigBee is a registered trademark of ZigBee Alliance, Inc.

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8.9 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

8.10 Export Control Notice

Recipient agrees to not knowingly export or re-export, directly or indirectly, any product or technical data

(as defined by the U.S., EU, and other Export Administration Regulations) including software, or any

controlled product restricted by other applicable national regulations, received from Disclosing party under

this Agreement, or any direct product of such technology, to any destination to which such export or re-

export is restricted or prohibited by U.S. or other applicable laws, without obtaining prior authorization from

U.S. Department of Commerce and other competent Government authorities to the extent required by

those laws.

8.11 Glossary

SLYZ022 —TI Glossary.

This glossary lists and explains terms, acronyms and definitions.

9 Mechanical Packaging and Orderable Information

9.1 Packaging Information

The following pages include mechanical packaging and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and

revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

IMPORTANT NOTICE

Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other

changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest

issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and

complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale

supplied at the time of order acknowledgment.

TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms

and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary

to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily

performed.

TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and

applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide

adequate design and operating safeguards.

TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or

other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information

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endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the

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Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration

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Texas Instruments 26M1 BLE and 802.15.4 module User Manual

Texas Instruments Inc. BLE and 802.15.4 module Users Manual

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