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THE MAGAZINE OF ESSENTIAL NEWS, PRODUCTS AND TECHNOLOGY

MAY 17, 1966

When the chips are down, an applications-oriented semiconductor directory is your best bet for optimum device selection. Bipolars, FETs, UJTs and

integrated circuits are listed by key parameters. You also learn who-makes-what in diodes, ·SCRs and rectifiers. Articles show design basics, trade-offs.

#3704 - 16

LPDTµL 9040

LPDT ... L 9042

LPDTµL 9041

FEATURES:
Low Power drain .......................... less than 1mWI gate (typ.) @ 50% duty cycle less than 4mW/clocked flip-flop
Single power supply requirement ......... . . . 5V optimum, 4.5V to 5.5V range Guaranteed noise immunity ................. 450mV min. at temperature extremes Logic propagation delays .......... . ... . ... . 60nsec. typical Binary clock rate .......................... 2.5Mc
Full temperature range ... . .............. .. . - 55 ° C to +125° C

LPDTµL LOW POWER DIODE-TRANSISTOR MICROLOGIC rM CIRCUITS

Fairchild LPDT,u.L integrated circuits offer high performance in the low milliwatt range. High

resistance values and small chip geometry hold down power consumption. The flip-flop

element operates either in the R-S or J-K mode, with maximum dissipation of 6mW at a

2Mc toggle rate. Gates provide fan-out capability of 10 LPDT,u.L low power logic un it loads,

or one standard Fairchild DT1tL diode-transistor logic unit load. (Standard Fairchild DT1_tl logic ·circuits can be used to extend the fan-out capability still further). The circuits come in

Fairchild 's Cerpak flat package, and can be used in satellites, battery-operated field equ ip-

ment, or other instruments where reliability and high per- · · · · · · · · · · · · · ·

F I I L CJ formance must be achieved with limited power. Fairchild

~ ~CH

LPDT,u.L low power integrated circuits are available in ~ r-1111.

evaluation quant ities from distributors. For complete · · · · · · · · · · · · · ·

information write to :

SEMI CD ND U CTD R

FAIRCHILD SEMICONDUCTOR/ A D1v1sion of Fairchil d Camera and Instrument Corporation · 313 Fa i rchild Dr ive, M ountain View , California (415 ) 962 -5011 · TWX : 910 -3 79-64 3 5
Microlog ic is Fairchild's trademark for integrated circuits. ON READER-SERVICE CARD CIRCLE 2

ELECTRONIC DESIGN'S
SEMICONDUCTOR DIRECTORY
1966
Mark B. Leeds, Rene Colen
Technical Editors
Here is the industry's only complete applications-oriented semiconductor directory. Combiniµg ELECTRONIC DESIGN'S fourteenth aµn~al transistor data chart and thi.rd annual microelectron.ics data chart with a who-makes-what diode g~ide, the directory gives you in one package:
· All the device information you need to pinpoint solid-state design needs-listed according to major design parameters.
Ii ' Technical articles explaining how to use the specifications, major application ~reas and the governing design parameters.
· Convenient Reader-Service Card (good for a full ye~r) to order detailed device specifications direct from the manufacturer.
Transistors are classified according ·to seven application categories: Audio and General-Purpose, High-frequency, Power, Low-Level Switching, High-Level Switching, Unijunction and Field-Effect. Within each category, types are arranged in order of improving values of a key design parameter. This listing method permits ·rapid identification of close substitutes, because device specifications can be compared at a glance. The manufacturer listed in the "Mfr." column is the original registrant of the type for which data are supplied. Alternate suppliers are listed in the "Remarks" column.
The diOde chart provides a fast guide to the manufacturers who make the specific type of diode you need.
Microelectronic devices are divided into two major categories: Digital and Linear. Within these categories the devices are listed by logic type, in the case of d~gital circuits, and by application, in the case of linear circuits.
Cross-indexes for both transistors and microcircuits simplify the job of finding the specific device when the type number is known. Keep your semiconductor data up-to-date by doing the following: Step 1: Obtain specification sheets and other data, by finding the appropriate numbers on the manufacturers' literature list (pp. 4-9) and circling them on the Reader-Service Card. Step 2: Get your own copy of the 1966 Semiconductor Directory by circling Reader-Service No. 500.

May 17, 1966.

1

Meet the XTX ... a totally new tantalum capacitor with unmatched volumetric efficiency. A capacitor which
offers twice the capacitance value of the
CL65-yet retains CL65 case sizes! Voltage range is widest, too: from 6 all the way to 100.
The inside story? Dependability. CDE's exclusive seal construction virtually eliminates the possibility of electrolytic leakage. Rugged internal construction makes the XTX incredibly shock and vibration-resistant. It is, in fact, an advanced product ... one just right for computer circuitry, copy machines and many other applications.
CDE's new XTX capacitor: just another example of doing the job just a little better.
CALL YOUR CPE AUTHORIZED INDUSTRIAL DISTRIBUTOR.
~CORNELL·
~DUBILi ER

Table o·t Contents

4

List of manufacturers and their literature offerings.

208 Technical article reprints and reader service card.

TRANSISTORS

10 Parameters key applications, govern transistor selection.

18 How to use the charts and key to transistor types.

21 Transistor who-makes-what chart.

22 Bipolar transistor data charts:

22 Audio and general purpose.

78 Low-level switching.

34 High-frequency.

86 High-level switching.

I

56 Power.

94 For the how, why and where of FET usage, consult parameters.

104 Field-effect transistor data charts: 104 Analog switching. 106 Digital switching. 107 Low-drift single-ended
de amplifier.

108 Differential de amplifier. 108 General-purpose ac amplifier. 111 Low-noise ac amplifier. 112 High -frequency ac amplifier.

114 Use the UJT that does the job best.

118 Unijunction transistor data charts: 118 Pulse generating and
SCR triggering.

118 High-fre.quency control. 118 Low-frequency control.

122 Transistor cross-index (bipolars, FETs and UJTs).

DIODES/RECTIFIERS
144 Selecting thyristors to fill a control need? 156 In choosing diodes, don't settle for second-best! 164 Diode data chart (who-makes-what).

MICROELECTRONICS
170 Choosing ICs needn't be a chore. 174 Microelectronics data charts: 174 Diode-transistor logic. 180 Direct-coupled transistor logic
and resistor-transistor logic 184 Transistor-transistor logic 190 Emitter-coupled logic 200 Microelectronics cross-index.

192 Resistor-capacitor logic.. 194 Complementary-transistor logic. 195 Digital circuits (miscellaneous
types). 196 Linear circuits.

The cover photo, courtesy of Fairchild Semiconductor, Mountain View, Calif., shows a number of popular solid-state devices. At the upper right is part of an SCR (2N4319 type); resting on the- left portion of the SCR structure is a FET (Fl 100 type); in the center foreground is a 2N 1724 power transistor with an isolated collector; to its left, a hybrid flip-flop (SH2300 type); slightly above and to the right of the flip-flop is a µA709 monolithic operational amplifier; at the extreme upper left is part of a dual -bipolar ·unit (2N2060 type).

ELECTRONIC DESIGN is published bi -weekly by Hayden Publishing Company, Inc., 850 Third Avenue , New York, N. Y., 10022. James S. Mulholland, Jr., President. Printed at Poole Bros., Inc., Chicago, Ill. Controlled -circulation postage paid at Chicago, Ill., and New York, N . Y. Copyright © 1966, Hayden Publishing Company, Inc., 61 , 114 copies this issue.

<liE ON READER-SERVICE CARD CIRCLE 3

3

List of Manufacturers

'
Bring your semiconductor data file up to date. Use the ReaderService card to obtain data sheets, catalogs, application notes and other useful information. Consult dot charts (Transistors: p. 21, Diodes/Rectifiers: p. 164, and Microelectronics: p. 179, 182, 188) to learn who makes what in each device category. Starred (*) listings mean requests for literature and data sheets must go directly to the
manufacture rs.

Code

Company

Type of Information
Offered

.,s,, ·:g
~

~
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CG

Airtron Div., Litton Industries Data sheets.

201

200 E. Hanover Ave.

Article reprints.

Morris Plains, N.J. 07950

(201 ) 539-5500

Alpha Industries

Data sheets. Catalogs.

202

381 Elliot St.

Customer applications

Newton Upper Fal Is, Mass. 02164 service.

(617) 969-5310

AL Amelco Semiconductor 1300 Terra Bella Ave. Mountain View, Calif. 9_4042 (415) 968-9241
American Electronic Laboratories Inc.
P.O. Box 552 Lansdale, Pa. 19446 (215) 822-2929
American Semiconductor Corp. 4 N. Hickory Ave. Arlington Heights, Ill. 60004 (312) 392-8830
AMP Amperex Electronic Corp.
Providence Pike Slatersvi Ile, R.I. 02876 (401) 762-9000
Atlantic Semiconductor Inc. 905 Mattison Ave. Asbu[y Park, N.J. 07712 (201) 775-1827

Short form catalog.

203

204

Data sheets. Catalogs.

205

Article reprints.

Customer applications

service.

Data sheets. Catalogs.

206

Data sheets. Catalogs. 207 208 209 Application notes. Customer applications
service. Design aids.

Data sheets. Catalogs.

210

Data manu.als.

Bell, F. W., Inc.

Data sheets.

211

1356 Norton Ave.

Columbus, Ohio 43212

(614) 294-4906

4

Code

Company

BE Bendix Semiconductor Div. South St. Holmdel, N.J. 07733 (201 ) 747-5400
Bradley Semiconductor Corp. 275 Welton St. New Haven, Conn. 06506 (203) 787-7181
BU Burroughs Corp. Electronic Components Div. P.O. Box 1226 Plainfield, N.J. 07061 (201) 757-5000
CBS CBS Laboratories High Ridge Road Stamford, Conn. (203) 325·4321
Chatham Electronics Div. Tung-Sol Electric Inc. 630 W. Mt. Pleasant Ave. Livingston, N.J. 07039 (201) 992-1100 .
Computer Diode Corp. Pollitt Drive Fair Lawn, N.J. 07410 (201) 797-3900
Conant Laboratories 6500 0 St. Lincoln, Neb. 68501 (402) 488-0432
CDC Continental Device Corp. 12515 Chadron St. Hawthorne, Calif. 90250 (213) 772-4551

Type of Information
Offered

.s
-"~'
!=

..."'

11>

e·= a ,g 'Cl
0

.:!

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-

11>
CG

Catalogs. Design aids. 212 213

Data sheets.

214

Data sheets. Facilities brochure.

215 216

* *

Data sheets. Catalogs.

217

Data sheets.

218

Catalogs.

219

Data sheets..Catalogs. 220 221 Article reprints.
-
ELECTRONIC DESIGN

Code

Company

CT Crystalonics Inc. 147 Sherman St. Cambridge, Mass. 02140 (617) 491·1670
DE Delco Radio Div., General Motors Corp. 700 E. Firmin St. Kokomo, Ind. 46901 (317) 457-8461
Delta Semiconductors Inc. 879 W. 16th St. Newport Beach, Cal if. 92660 (714) 646-3286
DIC Dickson Electronics Corp. P.O. Box 1387 Scottsdale, Ariz. 85252 (602) 947-5751

Diodes Incorporated 20235 Nordhoff Chatsworth, Calif. 91311 (213) 341-4850
Eastern Delta Corp. 29-09 Broadway Fairlawn, N.J. 07411 (201) 797-4200
Eastron Corp. 25 Locust St. Haverhi 11, Mass. 01830 (617) 373-3824
Edal Industries 4 Short Beach Road East Haven, Conn. 06512 (203) 467-2591
Edgerton, Genneshausen & Grier, Inc.
160 Brookline Ave. Boston, Mass. 02215 (617) 267-9700
Electro-Optical Systems Inc. 255 N. Halstead Pasadena, Calif. 91107 (213) 449-1230
Electronic Devices Inc. 21 Gray Oaks Ave. Yonkers, N.Y. 10710 (914) 965-4400
ETC Electronic Transistors Corp. 153-13 Northern Blvd. Flushing, N.Y. 11354 (212) 539-6700
Erie Technological Products Inc.
644 W. 12th St. Erie, Pa. 16512 (814) 456-8592
FA Fairchild Semiconductor 313 Fairchild Drive Mountain View, Calif. 94040 (415) 962-5011

Fansteel Metallurgical Corp. Number One Tantalum Place North Chicago, Ill. 60064 (312) 336-4900

Type of Information
Offered
Short form catalog.

~ Cl> o·c"u:'

-~ ~

"C 0
i5

--~.::0 . :E ~

I-

a:;

222 223

Short form cataIog.

224 225

Data sheets. Catalogs.

226

Data sheets. Catalogs. 227 228 Application notes. Article reprints. Customer applications
service.

Data sheets. Cata logs.

229

Data sheets.

230

Data sheets. Catalogs.

231

Application notes.

Data sheets. Catalogs.

232

Article reprints.

Customer applications

service. Design aids.

Data sheets.

233

Application notes.

*

Data sheets.

235

Data sheets. Catalogs. 236

Catalogs.

237

Application notes.

Data sheets. Cata Iogs. 238 239 240 Application notes. ·Article reprints. Customer applications
service.
*

.May 17, 1966

Code

Company

GE General Electric Co. Semiconductor Products Dept. Bldg. 7, Electronics Park Syracuse, N. Y. (315) 456-2798
GI General Instrument Corp. Technical Service Center 600 W. John St. Hicksville, N.Y. 11802 (516) 681-8000
GME General Micro-electronics Inc. 2920 San Ysidro Way Santa Clara, Cal if. 95051 (408) 245-2966
General Semiconductors, Inc. 230 W. 5th St. Tempe, Ariz. 85281 (682) 966-7263
Green Rectifier Corp. 1-10 30 St. Fairlawn, N.J. 07411 (201) 797-8100
HP Associates 620 Page Mi 11 Road Palo Alto, Calif. 94304 (415) 321-8510
Heliotek Div., Textron Electronics Inc. 12500 Gladstone Ave. Sylmar, Calif. 91342 (213) 365-6301
HOF Hoffman Electronics Corp. Semiconductor Div. Hoffman Electronic Park El Monte, Calif. 91734 (213) 686-0123
HU Hughes Aircraft Co. Microelectronics Div. 500 Superior Ave. Newport Beach, Cal if. 92663 (714) 548-0671
Hunt Electronics Co. 2617 Andjon Dallas, Tex. 75220 (214) 352-8421
ITT ITT Semiconductors 3301 Electronics Way West Palm Beach, Fla. 33402 (305) 842-2411
IND lndustro Transistor Corp. 35-10 36th Ave. Long Island City, N.Y. (212) 392-8000
Instrument Systems Corp. 770 Park Ave. Huntington, N.Y. (516) 423-6200
IN lntellux, Inc. 26 Coromar Dr. Goleta, Cal if. 93017 (805) 968-3541

International Diode Corp. 90 Forrest St. Jersey City, N.J. 07304 (201) 432-7151

Type of Information
Offered

-~ I ~

o Cl>

_g 1 -~

"C 0

-~

~

i5 :E ~

I-

a:; '

Data sheets. Catalogs. 242 243 244 Application notes. Article reprints.

Data sheets. Catalogs. 245 246 247

Catalogs.

248

249

Data sheets. Catalogs.

250

Data manua Is.

Customer applications

service.

*

Data sheets.

252

Application notes.

*

Data sheets. Catalogs. 254 255 256 Application notes. Article reprints.

Data sheets. Application notes.

257 258 259

Catalogs.

*
260 261 262

Data sheets.

*
264

Data sheets. Catalogs. Application notes. Article reprints. Data manuals. Customer applications
service. Design aids.

265
*

5

Code

Company

IEC International Electronics Corp. 316 South Service Road Melville, LI., N.Y. 11749 (516) 694·7700
International Rectifier Corp. 233 Kansas St. El Segundo, Calif. 90245 (213) 678-6281

IRC Inc., Semiconductor Div. 71 Linden St. W. Lynn, Mass. 01905 (617) 598-4800
KMC KMC Semiconductor Corp. Parker Road Long Valley, N.J. 07853 (201) 876-3811

KSC KSC Semiconductor Corp. 437 Cherry St. West Newton, Mass. (617) 969-8451
Korad Corp. 2520 Colorado Ave. Santa Monica, Calif. 90404 (213) 393-6737
LAN Lansdale Transistor & Electronics Inc.
1111 N. Broad St. Lansdale, Pa. 19446 (215) 855-9004
Ledex, Inc. 123 Webster St. Dayton, Ohio 45402 (513) 224-9891
MSI Electronics Inc. 116-06 Myrtle Ave. Richmond Hill, N.Y. (212) 441-6420
Mallory Semiconductor Co. 424 S. Madison St. DuQuoin, Ill. 62832 (618) 542-2154

MEP Mepco, Inc. Columbia Road Morristown, N.J. 07960 (201) 539-2000
MicroSemiconductor Corp. 11250 Playa Court Culver City, Cal. 90230 (213) 391-8271
Micro State Electronics Corp. Subsidiary of Raytheon Co. 152 Floral Ave. Murray Hill, N.J. 07971 (201) 464-3000
Microwave Associates Northwest Industrial Park Burlington, Mass. 01803 (617) 272-3000
MO Motorola Semiconductor Products, Inc.
5005 E. McDowell Road Phoenix, Ariz. 85008 (602) 273-6900

Type of Information
Offered

~ -~
.=

~
0

o·c"..:'.
.~ _g

i5 ::E ~

a;

Data sheets. Catalogs. 267 268 Customer applications
service.

Data sheets. Catalogs.

269

Application notes.

Article reprints.

Customer applications

service. Design aids.

Data sheets. Catalogs.

270

Customer applications

service.

Data sheets. Catalogs. 271 272 Application notes. Article reprints. Customer applications
service.
*

*

*

Catalogs.

274

Data sheets. Catalogs.

275

Data sheets. Catalogs. Application notes. Article reprints. Data manuals. Customer applications
service. Design aids.
Data sheets.

276 277

Data sheets. Catalogs.

278

Application notes.

Article reprints.

Customer applications

service. Design aids.

Data sheets. Catalogs.

279

Application notes.

Article reprints.

Data sheets.

280

Data sheets. Short form catalogs. Application notes.

281 282 283

6

Code

Company

National Electronics Inc. Geneva, 111. 60134 (312) 232-4300

Type of Information
Offered
Data sheets.

~
'iii c 1! I-

~
0
i5

e'c"..'.
-~ ,g
::E ... aCl;>

284

NA National Semiconductor Corp. Conimerce Road Danbury, Conn. (203) 744-0060

*

*

NOR Norden Div., United Aircraft Corp. Data sheets. Catalogs.

285

Helen St.

Application notes.

Norwalk, Conn. 06856

Article reprints.

(203) 838-4471

Customer applications

service.

NUC Nucleonic Products Co., Inc. Components and Devices Div. 3133 E. 12th St. Los Angeles, Calif. 90023 (213) 968-3464

Data sheets.

286 287
'-. r·-~

Ohmite Manufacturing Co.

*

3601 Howard St.

Skokie, 111. 60076

(312) 675-2600

PR Philbrick Researches, Inc.

Data sheets. Catalogs.

288

Allied Drive at Route 128

Application notes.

Dedham, Mass. 02026

Article reprints.

(617) 329-1600

Data manuals.

Customer applications

service.

PH Philco Corp. Church Road Lansdale, Pa. 19446 (215) 855-4681

Data sheets. Short form catalogs. Application notes. Article reprints. Design aids.

289 290 291

Power Components, Inc. P.O. Box 421 Scottdale, Pa. 15683 (412) 887-6600

Data sheets. Catalogs.

292

Application notes.

Customer appl ications

service. Design aids.

RAD Radiation Inc. P.O. Box 37 Melbourne, Fla. 32901 (305) 723-1511

Data sheets.

293 294

RCA Radio Corp. of America

Cata logs.

Electronic Components & Devices

415 S. Fifth St.

Harrison, N.J. 07029

(201) 485-3900

295 296

RA Raytheon Co. Semiconductor Operation 350 Ellis St. Mountain View, Cal. 94041 (415) 968-9211

** *

Rectico Inc.

Cata logs.

297

20 Village Park Road

Cedar Grove, N.J. 07009

(201) 239-6464

Saratoga Semiconductor Div.

Data sheets.

298

Espey Mfg. Corp.

P.O. Box 422

Saratoga Springs, N.Y.

(518) 584-4100

Sarkes Tarzian, Inc. 415 N. College Ave. Bloomington, Ind. 47401 (812) 332:1435

Data sheets. Catalogs.

299

Application notes.

Data manuals.

Customer applications

service. Des ign aids.

Schauer Mfg. Corp. 4500 Alpine Ave. Cincinnati, Ohio 45242 (513) 791-3030

Catalogs. Application

300

notes. Price lists.

ELECTRONIC DESIGN

Show us where you can't

afford to use silicon power

and wen show you the

new Bend· B 5000 IX -

· (25wattsat2.5amps,) 10voltsand100 °C.

'

It costs under 40C.*

New manufacturing and packaging tech- B-5000 offers advances in size, weight and B-5000 lends itself equally well to other

niques make the B-5000 possible. These thermal resistance. Leads and collector commo~ly used production line

techniques include new internal device strips are a highly conductive material, techniques.

element assembly, along with new-concept offering excellent solderability, strength Electrical specifications

plastic molding operations. The result is and ability to withstand flex and pull. a simple, low-cost, reliable silicon power Plastic encapsulant offers outstanding in-

Charac-

Limits

Test Conditions

·

transistor with no power compromise when sulation resistance, hermeticity, adhesion

teristlc

Min. Max. Unit VvCB VvCE

IC A

IB mA

·TcJ

mounted upon the normal heat sink.
B-5000 's low cost opens up whole new application areas for you. Now you can afford to put silicon power to work in many industrial and consumer products.

ability and high temperature characteristics. In no way does B-5000 compromise traditionally accepted reliability practices.
With B-5000 you can tailor mounting techniques to fit your needs exactly. Depending

VCEO ICEO ICBO VBE hFE hFE VCE(s)

3---5
30
2-0

-
10 1.5 1.2
2-50
1.2

v
mA
m--vvA

14

25 14 14 14

0.2 0.5 0.5 1.0 1.0

50

150

Lighting equipment, TV sets, audio am- on heat sink, available space and degree Absolute muimum ratings

plifiers, appliance sensing amplifiers and of assembly line mechanization, B-5000 VCE0=35 volts, IC=3 amps, IB=l amp, Tstg=-65 to

industrial controls, to mention a few. can be mounted in the fashion best suited 175°C, TJ=-65to150°C.

Compare the cost of the Bendix® B-5000 to your operation. For example, B-5000 For complete information about the new

with any other silicon power unit of equal is readily adaptable to the newer assembly Bendix B-5000 silicon power transistor,

rating. You'll discover significant savings. solder techniques without degradation. write to us in Holmdel, New Jersey.

*In volume quantities

Bendix Semiconductor Division
HOLMDEL, NEW JERSEY

:~~ncff/
CORPORATION

ON READER-SERVICE CARD CIRCLE 4

May 17, 1966

7

Code

Company

Type of Information
Offered

j
·u";'
c:
~

."a
0

e·2"'
.~ ,g

. i:S :E u

a;

Code

Company

Type of Information
Offered

~
-~

.::: o·c"u:'

0
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. ~- J0:I ~~

t!:

Gi

Semcor Div., Components Inc. Data sheets. Catalogs.

301

SW Stewart-Warner Microcircuits

Data sheets. Catalogs.

322

3540 W. Osborn Road

Inc.

Application notes.

Phoenix, Ariz. 85019

730 E. Evelyn Ave.

Article reprints.

(602) 272-1341

Sunnyvale, Calif. 94086

Customer applications

Semicon Inc.

Data sheets. Catalogs.

302

(408) 245-9200

service.

Sweetwater Ave.

SY Sylvania Electric Prod.

Data sheets. Catalogs. 323 324 325

Bedford, Mass.. 01730

100 Sylvan Road

Application notes.

(617) 275·8542

Woburn, Mass. 01801

Customer applications

Semiconductor Devices Inc.

Data sheets. Catalogs.

303

(617) 933-3500

service. Design aids.

875 W. 15th St.

Syntron Company

Data sheets. Catalogs.

326

Newport Beach, Calif. 92663

283 Lexington Ave.

(714) 642-5100

Homer City, Pa. 15748

Semiconductor Specialists Inc. Data sheets. Catalogs.

304

(412) 479-8011

5700 W. North Ave. Chicago, Ill. 60639 (312) 622-8860

Customer applications service.

TRWS TRW Semiconductors Inc. 14520 Aviation Blvd. Lawndale, Cal if. 90260

Data sheets. Article reprhlts. Short form catalog.

327 328 "'-,

'

Semi-Elements Inc.

Catalogs.

305

(213) 679-4561

Saxonburg Blvd.

Tl Texas Instruments Inc.

Data sheets. Catalogs. 329 330 331

Saxonburg, Pa. 16056

P.O. Box 5012

Application notes.

(412) 352-1548

Dal las, Tex. 75222

Customer applications

Semtech Corp.

Data sheets. Catalogs.

306

(214) 235-3111

service.

652 Mitchell Road

Application notes.

TR Transitron Electronic Corp.

Short form catalog.

332 333 334

Newbury Park, Cal. 91320

Data manuals.

168 Albion St.

(213) 628-5392

Customer applications

Wakefield, Mass. 01881

service. Design aids.

(617) 245-4500

SA Siemens America Inc.

Data manuals.

307

230 Ferris Ave.

White Plains, N.Y. 10603

(914) 948-3434

Trio Laboratories 80 DuPont St. Plainview, N.Y. 11803 (516) 681-0400

Data sheets.

335

Application notes.

Customer applications

service.

SIG Signetics Corp. 811 E. Arques Ave. Sunnyvale, Cal if. 94086 (408) 739-7700

Data sheets. Application notes. Article reprints.

308

UC Union Carbide Electronics

Data sheets. Catalogs. 336

365 Middlefield Road

Application notes.

Mountain View, Calif. 94041

Customer applications

(415) 961-3300

service. Design aids.

STC Silicon Transistor Corp. E. Gate Blvd. Garden City, N.Y. (516) 742-4100

SI

Siliconix Inc.

1140 W. Evelyn Ave.

Sunnyvale, Calif. 94086

(408) 245-1000

Slater Electric Inc. 45 Sea Cliff Ave. Glen Cove, N.Y. (516) 671-7000

Solar Systems Inc. 8241 N. Kimbal I Ave. Skokie, Ill. 60076 (312) 676-2040

SSP Solid State Products Inc. One Pingree St. Salem, Mass. 01970 (617) 745-2900
SOL Solitron Devices Inc. 1177 Blue Heron Blvd. Riviera Beach, Fla. 33404 (301) 648-4311
SSD Sperry Semiconductor 380 Main Ave. Norwalk, Conn. 06852 (203) 847-3851
SPR Sprague Electric Co. 491 Marshall St. North Adams, Mass. 01247 (413) 664-4411

Data sheets. Catalogs. 309 310 Application notes. Customer applications
service.

Catalogs.

311

312

Data sheets. Catalogs.

313

Application notes.

Data sheets. Cata logs.

314

Application notes.

Article reprints.

Data manuals.

Customer applications

service.

Data sheets. Catalogs. 315 316 Application notes. Customer applications
service.

Data sheets. Short form catalogs. Data manuals.

317 318

Data sheets. Catalogs. 319

Data sheets.

320

321

Application notes.

Short form catalog.

Unitrode Corp. 580 Pleasant St. Watertown, Mass. 02172 (617) 926-0404
Vactec Inc. 2423 Northline Industrial Blvd. Maryland Heights, Mo. 63045 (314) 432-4200
Varian/ Bomac Div. Beverly, Mass. 01915 (617) 922-6000
VAR Varo Inc., Special Products Div. 2201 Walnut St. Garland, Tex. 75040 (214) 276-6141
VEC Vector Solid State Labs. Southampton, Pa. 18966 (215) 357-7600
Western Semiconductors Inc. 2200 Fairview St. Santa Ana, Cal if. 92704 (714) 546-2250
WH Westinghouse Electric Corp. Molecular Electronics Div. Box 7377 Elkridge, Md. 21227 (301) 796-3666
WH Westinghouse Electric Corp. Semiconductor Div. Youngwood, Pa. 15697 (412) 925-7272

Data sheets. Catalogs.

337

Data manuals.

Customer applications

service. Samples.

Test reports.

Data sheets.

338

Data sheets. Catalogs. Application notes. Customer applications
service. Design aids.
Data sheets. Catalogs. Article reprints. Design aids.

339 340 341

*

Data sheets. Catalogs. Application notes. Customer applications
service. Design aids.
Data sheets. Short form catalog.

343 344

Data sheets. Catalogs. 345 346 Application notes. Article reprints. Design aids. Short form catalog.

8

ELECTRONIC DESIGN

the price

of systems

'

power supplies

Just Dropped s100

(Con Avionics Has Another New Line)

When we cut $100 from the going market price for systems power supplies, we kept all the features you need most.
For example, Con Avionics' new line carries an unconditional five year guarantee. It has a Mean Time Between Failure of 35,000 hours, calculated according to Mil Handbook 217. We use silicon transistors exclusively, so the units operate to 75°C. They are designed and manufactured to meet specifications under the worst possible combination of operating conditions.
The secret to maintaining all this quality at a low price lies in designing a systems power supply right from the start. Most modules used in high power systems applications are just modified lab units.
But when you design a supply just for systems use you

PARTIAL SPECIFICATIONS
Input: 105-125 VAC, 47-63 cps
Regulation: (Line and load combined) ± 0.05% Ripple: 1 mv RMS max.
Response time: 25 microseconds Temperature Coefficient: 0.015%/°C or
18 mv/°C., whichever is higher Temperature: 75°C max.
The entire voltage range between 5.5 vdc and 51.0 vdc is covered in twenty-six models. Currents range from 8.0 amps to 46.0 amps. Wattages from 104.5 to 816.

worry about things like panel space. So Con Avionics new HS supplies are available in rack and half-rack size. You can pack 12 volts at 20 amps into 514'' of panel height and 8" of width.

And in a system supply you design-in optimum air flow,

for both vented and forced air cabinets. Our units are selfcooled, too.

Before you buy another power supply for a systems application, remember that the price is now $100 lower than it

FULL RACK SIZE

used to be. Call, write, wire or TWX Mr. Gerry Albers at

Con Avionics for all the details.

HALF RACK SIZE

OF~CORPORATION ~ CONSOLIDATED AVIONICS

A DIVISION

800 Shames Drive· Westbury, L. I., New York· 516-ED 4-8400

ON READER-SERVICE CARD CIRCLE 5

May 17, 1966

9

Select the best transistor for the job by knowing
which parameters govern for a given application. Here is the lowdown-from de to RF and low-level thru large signal.

Modern bipolar transistors, unlike first-generation types (devices generally numbered below 2N700), have been specifically tailored to achieve optimum performance in certain applications. The key to transistor selection, then, lies in understanding and consulting the parameters which reflect a transistor's suitability for any particular a p p l i c at ion.
Here is a master chart which shows the governing parameters according to major application categories. It embraces small- and large-signal amplifiers, low- and high-speed low-level switching circuits, power switching networks and RF power amplifiers. The frequency range runs from de to the gigahertz region.
Application categories narrow the search
Simply stated, the best transistor for an application is one which performs the intended function at lowest cost. Years ago, when nearly all transistors were made by an alloy process, differences between types could be predicted quite readily. Compromises were inevitable; the general trade-off was between frequency response and power-handling ability.
For a time, the dream of a universal transistor was entertained with the advent of mesa, planar and annular types of transistors. But the vision never materialized because with each technologi~ cal advance it was found that transistors tailored to very specialized applications could be designed. These devices enabled performance in these applications to exceed by far all prior expectations.
To narrow ·- the search for the transistor best suited to your application, a key para.meter chart (see table) has been developed. The chart is applicable to the majority of available devices, including modern ones made by mesa or passivated technologies as well as older types made by alloy and grown processes.
The following definitions delineate the application categories. · Small-signal amplifiers to 3 Mhz. These devices handle small amounts of power, and they need
William D. Roehr, Manager, Device Characterization Section, Applications Engineering, Motorola Semiconductor Products Inc., Phoenix, Ariz.
10

only have a limited frequency response. Operation is small-signal, that is, no large excursions of collector current are required, although collectorvoltage swings may be large. · Small-signal amplifiers above 30 MHz. ·These devices are similar to those above but are primarily intended for RF applications. There are some differences in the significant characteristics, particularly in gain, noise and age. · Low level, low-speed switching and large-signal drivers. These cover switching speeds or amplification at frequencies below 1 MHz. They are generally of the same type as those in the first category, but additional specifications such as saturation voltages and response times are needed to define switching and large-signal performance. . · Low-level, high-speed switching. Devices· in
this group are typified by a high fr value ( > 50
MHz, generally) and a low storage time. · Large-signal amplifiers and power switching. Representative devices have a dissipation figure in excess of five watts at a 25 °C case temperature. · RF power amplifiers. Devices in this category
"Why settle for second-best?" Pick the optimum transistor type for your application by using author Roehr's guide to distinguishing between bipolar devices. It shows where and why transistors can and should be used.
ELECTRONIC DESIGN

are especially designed for use as power amplifiers and oscillators at frequencies exceeding 10 MHz.
Gain: major factor in small-signal amplifiers
In small-signal amplification to 30 MHz, the primary characteristic of the amplifier is the power gain of the circuit. The power gain of an amplifieroperated common-emitter with no circuit feedback is easily determined from the transistor h parameters :1

where Rds the load resistance, h rl' the small-signal current gain ((3), hoe the input admittance and h ie the input impedance. Note that llh is the determi-
nant of the h ie - hre-hre - hoe matrix where hre is
the voltage feedback. ratio. In many cases RL< <
hoe , so that llh and gain may be approximated by2

h1/R1

G=--.

(2)

hie

At low frequencies, input impedance h ie may be written as r'b + hrer e, so that Eq. 2 may be further simplified to

G = hie [ r, + ~~.lh1el ]'

(3)

where r'b is the transistor base resistance, and r e

the transistor dynamic emitter resistance. A

transistor stage has a power gain equal to the

product of a current gain and a voltage gain.

Parameter h1e establishes the current gain and the resistances (primarily the Rdre ratio) determine

the voltage gain.

·

The actual amplifier design can proceed once

the h parameters as a function of the operating point and some data on their inter-relationships are known. This infor mation is usually found on the curves of a transisto:r data sheet.

Frequency response: a figure of merit

Second in importance only to gain in smallsignal amplifiers is the frequency response. Here the gain-bandwidth frequency ([,,.) is of prime interest.3 It serves as a very useful figure of
merit. To calculate circuit cutoff-frequency, the capac-
itance from base to collector (Cob ) must also be considered. For a comm9n-emitter amplifier without degeneration, the response will be down 3 dB at the critical frequency given by

fr/hfe
f,=---

(4)

c 2 1T frRLCob

Older specification sheets generally use the term
"beta-Cutoff frequency," f ae, Which is related to f T
by
(5)

In the front ends of preamplifiers, the noise figure is all-important. Noise will be lowest for transistors having high h1e and low r'b values. Designing for low noise is usually quite involved,4 but helpful data sheet design curves are usually supplied. If it is not spBcified, assume that the transistor will usually be too high to be satisfactory for first-stage preamplifier operation, particularly when low frequencies are to be handlBd.
Aside from gain, frequency response and noise, there are a number of other, in general, secondary parameters that must be considered.
For linear operation, the available voltage swing must generally be confined. This avoids

This micropower switching transistor geometry is the 2N3493 device (Motorola). Featuring input and output capacitances of 0. 7 pF, the transistor itself is in the rectangular-shaped overlap area between the circles.
May 17, 1966

A ring-dot geometry is exhibited by the 2N3783 bipolar transistor. Suitable for very low-noise RF amplification, this Motorola device has a maximum noise of only 2.2 dB at 200 MHz. The yolk-colored pattern is the base area.
11

distortion due to saturation in the low-voltage region and avalanche effects in the high-voltage area. The guideline to follow-since linearity is seldom specified-is to take the specified value of
V BE and nine-tenths of VaEo as suitable limits for load-line excursions.
Even though small-signal amplifiers dissipate low power, the powe·r-dissipation rating at ambient temperature and the maximum junction-temperature rating deserve some attention. In addition, although the I aso leakage current is negligible in modern silicon transistors, it is large enough to cause stability problems in germanium types; where it, too, must be taken into account. In all transistors, the variation of base-emitter voltage and current gain as a function of temperature directly affects stability,5 although V BE and hre were neglected in older treatments of the subject because the effect of laso was so much greater.
Devices classified as general purpose transistors will perform best in audio and video amplifying applications. In general, the best present types are silicon pnp passivated units, as they have the flatest curve of hre vs I a and the lowest noise.
Engineers occasionally stretch a point in their search for a universal device. They may use a transistor which has been -optimized for some

other function in a small-signal amplifier application, just because the device is handy, or economical in large quantities. This may be foolhardy. For example, both silicon and germanium transistors intended for high-speed switching or RF amplification are poor choices as general-purpose devices. The switches, if made of silicon, will be gold-diffused to reduce storage time-in saturatedmode switching service. This manufacturing practice causes the h1e to be low and to fall off at low current, and also produces high leakage currents and high noise. A germanium-type switch is a poor choice because of low voltage-ratings and relatively high leakage currents. Similarly, the RF qevice will exhibit low gain at low frequencies and its her is often very sensitive to changes in I a and/ or VaE·
Oscillation frequency index of RF performance
RF small-signal amplifier applications require a new look at the gain and frequency parameters. The characteristics of importance in the RF region are in general quite different from those in the audio realm. Here too, gain is important, but the best indicator of it in the high-frequency region above the beta-cutoff frequency f ae is f fl'll(U;J the

Key parameters based on application

Device types

Use category

Required specification ratings

Characteristics Ii mi ts

VCEO

fT Cob hFE

Edge

Fune-

Pc PA TJ

Yceo

or *VcES

VEBO or *fmax

or *Cre

or *hfe

SVCE

Noise fig.

of sat

ts ti on al test

Alloy (GPA or GPS) Grown, mesa Planar Annular (no gold)
(s!~ndard diffusion)
Drift, mesa Planar Annular
(RF diffusion)
Alloy, grown (no gold) Mesa Planar Annular

Small-signal amplifiers (to 30 MHz)
Small-signal amplifiers (above 30 MHz)
Low-level, lowspeed switching (to 1.0 MHz);
Large-signa I drivers (below 30 MHz)

x x

x

x x X*

x x

-

x x

x

X* X*

x

Ge,

age

xx x x x x x x x

xx -

Mesa raid-doped

Planar

or

Annular low-voltage

(standard diffusion) ·

Low-level, highspeed switching (above 1.0 MHz)

xx x

Large-signa I

All power types with

amp Iifiers;

x

standard base diffusion Power-sw itching

(below 10 MHz)

x x

x x x xx x x x x xx x

xx xx -

Power-class

RF types only

amplifiers;

x

x

Osc iIlators

X*

x

x

Ge, pout

(above 10 MHz)

12

ELECTRONIC DESIGN

)

maximum frequency of oscillation.6 The power gain at high frequencies for practi-
cal amplifiers is given as

G =

fr

(6)

e 8 'TT f2 r' b ere'

where f T is the gain-bandwidth product, f the frequency of operation, r'b the base-spreading

resistance and Cre the collector-base feedback

capacity. The maximum frequency of oscillation,

f max, may be found by solving Eq. 6 for the fre-

quency where power gain is unity. This yields

-v=

f,T

·

(7)

fmazs

7r r' b

C re

Note that power gain will increase at the approxi-

mate rate of 6 dB/octave as circuit operation is shifted down in frequency from f max· Precise calculations can be made by using the two-port admittance parameters provided on the modern

data sheet.

Once again, for the input stages of a system,

noise figure is important.1 As with audio amplifier

types, devices that do not have a specified noise

figure will probably not be suitable for front-end operation at vhf and uhf.

Age is a bias factor
RF devices generally exhibit a maximum gain when operated at certain bias conditions. Many transistors are designed to have special automatic gain control (age) characteristics, so that gain decreases at a certain rate in relation to changes in the de bias.
The gain may be reduced by decreasing the collector current (reverse age) , or increasing the colleCtor current (forward age) . All transistors are capable of reverse-age operation, whereas a forward age characteristic is obtained only by special device design. Forward-age operation is suitable only at frequencies above f ae ; reverse age may be used at any frequency. Forward age has the advantage of an increasing signal-handling capability with rising input signal. This age information is usually supplied for devices which are designed for particular use as gain-controlled amplifiers.
Other characteristics to be considered include the breakdown-voltage rating, V cEo, because it comes into play when choosing power supply voltages, and allowable output-voltage swings. Ambient-temperature power rating and the junetion-temperature limit are of only passing interest. This is because RF applications are typified by low power-dissipation figures. Functional tests of gain and noise, as specified on some data sheets, show th~ optimum operating point and are an excellent guide to whether the device will be suitable for a given application.
As for the matter of "universality," the RF device is most emphatically a special product. General-purpose and switching transistors are not nearly as suitable in RF applications. In general,.

May 17, 1966

the gain of these units will be very low, they will be unstable, and they will exhibit high noise.

Saturation, de modes set switching stage
In low-level, low-frequency (< 1 MHz) switching, many of the characteristics specified for most modern devices must be weighed. The same type of transistor that makes a good audio amplifier may very well serve as a good switch.
Here, specifications additional to the audio figures are required. Of primary importance in a switching system is the gain of the stage which approaches the de gain (hFE ). Also, because most devices operate in a saturated mode, the saturation voltage is of considerable interest. It sets a system-voltage level and largely determines the power dissipation.
Finally, the remaining set of major parameters is the switching times.8 Included here is the storage time, for in the case of the older, alloy-junction devices, it can be lengthy. Nearly all modern types of transistors, however, have storage times which are quite small by comparison; they are therefore suitable for low-speed switching circuits. It is nonetheless desirable to have a storage time U s), specification, which is approximated by

+ ]Bl I B2

ta = 'Ts ln (I /h + I ) '

(8)

c FE

B2

where T s is the storage-time time-constant, I B1 the turn-on base current, / 82 the turn-off base current,
I a the collector current and hFE the de current gain. Equation 8 is helpful in estimating storage time at a point other than the one specified on the
data sheet. For alloy devices, Eq. 8 holds quite
well; for modern devices, it is found that T s varies somewhat with I 0 · In the latter case, Eq. 8 may result in an error of 2:1 and therefore should not be used indiscriminately.
Another figure of merit is the sum of the rise and fall times. An index of the rise-and-fall-time
values. can be obtained from f T and Cob· Parameter f T predominates in the rise-time equation in the
high-current region, while output capacitance C00 is paramount in the low-current region. To pre-
dict rise time, t,., both parameters must be known
and used in:

tr=

( ~ 1

+

RL

)
cob

(

1

-

I cfI Bl
I /2 I

h

)
.

(9)

'TTJT

C

Bl FE

In Eq. 9 f T is the gain-bandwidth product, R L the load resistance, Cob the collector-base capacitance, I a the collector current, I n1 the base current and hFE the de current gain.

Load line control is essential
The expression is reasonably accurate provid-
ing that I 0 / I B1 < h FE/2. In applying it, the I B1
·value must approximate a step of current, RL should be a pure resistor and the values of f T and Ccb must be averaged over the load line used.
13

The voltage breakdown rating, VcEo, usually proves to be the best indicator of an upper voltage limit. But in many cases, careful control of the load line and the reverse bias placed on the transistor makes it possible to switch voltages up to the V cHo rating.9
For switching applications such as multivibrators and flip-flops, where capacitors are used in the base-coupling circuit, the V EBo rating must be known, as it is quite easy to exceed .this limit inadvertently.
The rated dissipation at ambient temperature and the maximum junction-temperature limit rate attention, but are not of prime importance, because the power dissipated here is fairly small.
The leakage currents of germanium and silicon devices may be a selection factor. In today's silicon transistors they are so low that they are not of design significance. On the other hand, the leakage of germanium devices may prove troublesome.
Silicon transistors are generally preferable to germanium types in switching applications because the former have a higher V BE turn-on voltage. This and their lower leakage currents make it easier to maintain the cut-off state.
Storage time a key in high-speed switching
The characteristics of importance to high-speed switching applications are essentially the same as those in the previous group. But there is greater emphasis on the storage-time specifications, since they prove to be a primary limit on how fast a logic system can operate.
To achieve low storage time, the recommended devices are low-voltage germanium or gold-doped silicon units. These transistors are generally un-
This power transistor features an isolated collector. Shown before being sealed, this semiconductor type (2N 1724) unit comes in a T0-61 package.
14

suitable for applications other than switching. Silicon npn types achieve the fastest switching.
Designers are sometimes tempted to use an RF transistor in a switching application. The results are disappointing, for RF devices have low V EBo ratings, low hFE values, high storage times and poor saturation ~hara~teristics.
Power rates high in large-signal amplifi~rs
In large-signal amplification, large amounts of power are handled and the power rating of the transistor at a specified case temperature becomes of paramount interest. The voltage which it can tolerated, as indicated primarily by the BVchJo rating, is also of great importance. The other voltages normally mentioned on data sheets generally do not greatly affect these applications.
In such devices, the edge of the saturation region, as evidenced by the knee in the collector V-I curve is significant. This is particularly so for the linear power amplifier, as it is obviously desirable to handle current peaks and voltage excursions as close to the saturation region as possible for maximum efficiency. Edge of saturation information can often be obtained from data sheet curves. In power transistors, saturation will often
occur when VcE > VBE·
These power units are also used in powerswitching, where many of the characteristics that are of consequence are the same parameters that govern in low-level applications. In this category, storage time may also limit the speed at which switching can be handled, although speed itself is usually not of primary importance.
Rise time at high currents is a major interest, but because of the current range over which these devices are switched, the use of fr measured at a single point does not correlate with measured rise time if fitted to Eq. 9, and the rise-time specifications and curves must be used. Gain (h PE ) matters because efficiency is a prime consideration, and so too does saturation voltage because of the large currents usually handled. The product of the current and saturation voltage largely determines the power dissipation and dictates .the requirements for the heat dissipator.
Current excursions modify frequency response
A common denominator for both large-signalamplification and power-switching applications is frequency response. The gain-bandwidth frequency (fT) serves as an indicator of amplifier highfrequency response, but as with switching service, the amplifier's large current excursions cause discrepancies. When attempting to calculate frequency response, Miller effect due to C ob should be considered as well as fr·
Generally, better amplifier performance predictions can be obtained from proper use of the transistor switching data. If rise-time data is plotted as a function of I c with V cB as a parameter (under
the condition I 0 / IB1 << hFE), a large· signal cut-
off frequency can be found from
ELECTRONIC DESIGN

' _/

f =

IC

(10)

A 27Ttr hFE [Bl

In Eq. 10, f A is the large-signal common-emitter
cut-off frequency and I c the ON collector current.
Parameter tr is the rise time obtained from

switching data at the collector current U c) and voltage swing of interest. Note that V cE of the switching test is the same as ~VcE in amplifiers, and I aeon> of the switching test corresponds to I c( PK> in amplifiers; hFE is the transistor de current gain and ls1 is the turn-on base current used in the switching test.

Flat curves of hFE vs I c are desirable for silicon transistors, as they are commonly driven from , high-impedance sources to obtain the best thermal

stability and the lowest distortion. For germanium power transistors, a low-impedance drive circuit is required to achieve the same ends, so

that a flat curve of transconductance vs collector current is needed.10
An extremely important characteristic of power

devices is the safe operating area.11 Data are usually presented in graphic form showing per-

missible regions of V cE-Ic operation as a function of time. Unfortunately, safe area does not correlate very well with the power ratings based upon thermal resistance. All the same, safe area, not power rating, is more often than not the arbiter of power-handling ability, and therefore is the prime concern.

Functional tests guide RF operation
RF operation creates conditions such that conventional parameters simply give no indication of a particular transistor's suitability. The only way to select devices, then, is to refer to the functional test on the manufacturer's data sheet. Here you will find the power gain at a given power output under the optimum conditions for which the devices were designed.
Bear in mind that the BVcEs voltage rating has proved to be the most useful single voltage rating for RF power transistors. As in low-frequency power applications, the edge of saturation is significant and so is safe area information. Secondary considerations are the maximum temperature rating and 25°C case power-dissipation ratin~. When designing the tuning circuit, output capacitance Cob must be known.

Sewing up the tailored device choice
A theme of this discussion has been that there is no universal transistor. It is wisest to select transistors with specifications tailored by the manufacturer to a given application.12
It is found, for example, that devices intended for high-speed, low-level saturated switching service possess very high noise figures and very low gain as audio-frequency amplifiers. Germanium switches, made from low-resistivity material to achieve low storage time, similarly should not be used indiscriminately in audio amplifiers.
Devices intended for RF applications are de-

May 17, 1966

Pick the right device! When faced with a number of transistor geometries, cans, etc., to choose from, use the key parameters as a guide to application.
signed to have very low base-spreading resistances. For this, a diffusion profile in the base is made to have an average low resistivity. As a result, the input capacity is rather high, the current gain very low, rendering this type of device unsuitable for audio and switching applications.
Conversely, the switching device, designed to have a high emitter-breakdown voltage and a low input capacitance, will have a high-base-spreading resistance. This results in low power gain and high noise when it is operated as an RF amplifier. In the power area, too, the same types of tradeoffs are evident. · ·
References:
1. R. F. Shea et al., Transistor Circuit Engineering (New York: John Wiley & Sons, Inc., 1957), chap. iv.
2. A. B. Phillips, Transistor Engineering (New York: McGraw-Hill Book Co.. 1962, chaps. xii & xiii.
3. Ibid., chap. xiv. 4. J. R. Miller et al. Communications Handbook (Dallas, Tex.: Texas Instruments Inc.), Part II, chaps. i, vi & vii. 5. H. Weber, A Method of Predicting Thermal Stability (Phoenix, Ariz.: Motorola Semiconductor Products, Inc.), Technical Information Note AN 182. 6. Phillips, op. cit., chap. xv. 7. Miller, Zoe. cit. 8. W. D. Roehr et al., Switching Transistor Handbook (Phoenix, Ariz.: Motorola, Inc., 1963), chap v. 9. Ibid., chap. iii. 10. Weber, Zoe. cit. 11. R. Greenburg, Determining Maximum Reliable Load Lines for Power Transistors (Phoenix, Ariz.: Motorola Semiconductor Products, Inc.), Semiconductor Technical Information AN 137-Rl. 12. J. F. Kane, Silicon Annular Switching Transistor Design Considerations (Phoenix, Ariz.: Motorola Semiconductor Products, Inc.), Technical Information Note AN 167.
.15

MINUTES
SECONDS
New Microflex Timer/ Counter
Dials make accurate settings, easier!

NEW TWISTER ... ACCURATE TIME/ COUNT CONTROL
New and consistently better! At the left is the new face of our famous Microflex® reset timers and counters. High -visibility , direct reading dials enable you to make highly accurate settings, easier! The larger, 20-turn scale, for example, may be in minute divisions with
the inner in seconds. Settings as short as %0th
of a second with ± 1/60th second accuracy are readily obtained. Other dial selections to 120 hours are available. After the desired pre-set time period, a variety of 15 amp. contacts can be opened or closed to control motors, solenoids, valves , etc. Uniform new lettering and attractive neutral grey color make units compatible with all other Eagle Signal types and with your most advanced machine designs. For full details about these new timers and counters, use Reader Service Card, circle number 91.

HZ60A6 COU NTER

CLUTCH
&<Q

START

And not one turn too many! The operating characteristics of radio tu~ing

coils depend on precise winding techniques . The Man from E.A.G.L.E. did a'

good turn for above. Using wire tension

acahMaleniacgdreoisnflgeaxrmecaontauuknfeatencrtu,crvaearreriwaohtifeonn.sh.ein. saumngdogteoasrntesdpaectech~derarsteyess.ute~ltrfi!n~l g~suhcfotrwo.n1~s

produced each time . The operator merely needs to set the h1gh-v1s1bll1ty dial

and press the button. The arbor turns the pre-set number of revolutions and

stops automatically. In this system, the Microflex counter controls brake,

clutch and motor. Complete information is in Bulletin 730. For a copy, use

Reader Service Card, circle number 92.

FILL'ER UP ..·

LIMIT SWITCH
r-~~~~~~~~--1

HA4 2A6 RESET TIME R

l
MOTOR

And not one ounce too many! A leading food supply manufa.cturer p~esented the Man from E.A.G.L.E. with the packaging requirement shown at the lef.t. This manuf.actu:er want~d to accurately fill containers. A versati.le M1croflex timer was th~ ?nswer. It moves the containers
u.nder the hopper.... filling and advancing them by the t1m.e lapse tec~rnque. The li'mit switch i"n this system
act1vate.s th.e M1croflex which control's hopper-valve and ~otor c1rcu1~s. ~n accuracy of 1;10 % ef ful'I sale is cons1ste~tly m~intained and the manufacturer can vary the con~a1~er sizes. and amounts he wants them to carry.
Intriguing? .write for Bulletin 110 for full data. Use.
Reader Service Card, circle number 93;

The..Man from,~.A.G.L.E. would like you to see his com·

~~r~ata!og? plete showcase of process control ideas. Ma we send

rcoeu

For your copy, use the handy Rlader Serv·

.

.'. ~1rcle number 94, or write directly to Ea le

Signal D1v1s1on, E. W. Bliss Company Federal Street o:v :

enport, Iowa 52803.

' ·

· ·

1:0~$J l·I EAGLE SIGNAL I

A DIVISION OF THE E. W . B'tlSS COMP.AN·Y

16

ELECTRONIC DESIGN

22AP Plug-in General Purpose Relay

·.. the epitome of relay craftsmanship and design. Versatile to the Nth
degree on loads to 10 amps. Available in 8- and 11-pin styles for AC,
DC and plate circuit requirements. Features include: forms to 3PDT plus
specials on request; standard units have gold-plated contacts for longer
shelf life; lower pull-in voltages me:
70% of nominal, AC: 75% of nominal); AC operating voltages 0.5 to
250, DC 0.2 to 130 in current ranges
from .005 to 10 amp. Complete information is in our new relay bulle-
tin. For your copy, use Reader Service Card, circle number 95.

SPECIFICATIONS
·Contacts: SPDT, DPDT, 3PDT · Contact Rating: S and 70 amps. ·Pull-in: 22 milliseconds average · Drop-out Speed: 72 milliseconds
average
·Size: 7% · x 2.Ya ·x tYa ·
Q Weight: 3 ounces

25PS Medium Power Relay

POWERFUL PARTNER

... toss your toughest mediumpower-handling assignments to this
workhorse. 25PS types carry loads to
20 amps. on a fast duty cycle in a breeze. UL listed. Features include: rugged %" diameter silver cadmium oxide alloy contact; lower pull-in
voltages me: 75% of nominal, AC:
76% of nominal); AC operating voltages 4 to 250, DC 1 to 130 in current ranges from .02 to 10 amp. For full technical information on this and other Eagle Signal general purpose and medium power relays, use
nthuembReerad9e6r. Service Card, and circle

SPECIFICATIONS
· Contacts: SPD T
· Contact Rating: 20 amps. 77S/230 VAC 60 cycle resistive· 1 HP .@ 77S/230 VAC motor-inductive
· Pull-in: SO m illiseconds max.
· Drop-out Speed: 30 milliseconds max.
2 ·Size: 2~ · x 1~ · x 113{ · 6 · Weight: 3 ounces

25AA Open Frame General Purpose Relay

Ask the man from E.~.G.L.E. to open

his "showcase" of ideas for you.

Many can help solve your process

control problems. Want our com·

plete catalog? Use the handy ~Sader

Service Card, circle nl!~b.er

or

write· Eagle Signal D1v1s1on, E. W.

Bliss.Company, Federal Street, Dav·

enport, Iowa 52803.

~~ti.lea,nddepbeonydwabhlaet,

a relay _it is! Ve,reconomical. You II

find hundreds of uses f?r the~e ~.or

10 amps UL listed h1gh-rel1ab11ity

types. s'tandard units haye gold-

~helflated contacts which permit longer life. Other significant features

include: lower pull-in voltages (D~:

70% of nominal, AC: 75% of nomi-

nal) 250:

AC DC

operating 0.2 to 130

invocltuargre~nst

0.5 to ran_ge.s

ffriocmati~0n0s5

to on

10 amp. Detailed these and other

spec1Eagle

Signal general purpose rela¥s are

given in a new technical bul!etin. F~r

your copy, use Reader Service Car ,

circle number 97.

SPECIFICATIONS
e Contacts: SPDT, DPDT, JPDT
· Contact Rating: SA and JOA @ 7JS VAC·SA-1/10 HP@ 11S VAC, 1/6 HP@230 VACeJOA-7/6 HP@ 71S VAC, 1/3 HP@ 230 VAC
· Pull-in: 22 milliseconds average
· Drop-out Speed: 12 milliseconds average
·Size : 1Ya · x 1~2 · x 1 ~ · · Weight: 2 ounces

May 17, 1966

17

How to use the charts

A tint pairs the transistor type with the value of its key parameter for most applications in each transistor category. Devices are listed in order of increasing value of that key parameter. Note, however, that since various manufacturers may characterize their types differently, some "jumps" may take place in the sequence. Consider, for example, a type in the high-frequency category. Its key characteristic will be f ae or fr (values of fr are preceded by a single asterisk). But f ae is the frequency at which hre drops to 0.707 of its low-frequency value, and fr is the gain-bandwidth product, or the product of h1e and frequency at a point where hre is dropping by 6 dB per octave. Thus, f r is about hre times greater than f ae for a given type.
Under maximum ratings, manufacturers were asked to specify collctor power dissipation at 25 °C case temperature, this generally being the most meaningful single rating. The derating factor can then be used to estimate Pc for other operating temperatures.
Either V cEo or V cso is listed as a maximum voltage rating. VcEo is related to collectoremitter diode breakdown and V cRo to collector-base diode breakdown. But bear in mind that many manufacturers' data sheets will list other important voltage ratings, such
v v as CES or CER·
Under characteristics, ELECTRONIC DESIGN asked manufacturers to supply typical values -maximums, minimums or spreads. Where deviations from this occur, they are noted.
Finally, a word of caution: the characteristics listed serve primarily as a guide and generally should not be used exclusively for direct comparison of types. This is because it is impossible to list the wide variety of test conditions under which characteristics have been measured. V cEo, for example, can differ considerably for comparable devices when measured at a collector current of 100 µ,A in one case and 1 mA in another. The best bet is to consult the manufacturers' data sheets before making the final selection. Also, scan the articles that preface each listing section. Each article contains important information about parameter evaluation.
18

Key to Symbols

= small-signal short-circuit forward current transfer ratio cutoff fre- .--- r~ quency (commont-emitter)

= small-signal short-circuit forward current transfer ratio cutoff frequency (common-base)

= gain-bandwidth product

= collector power dissipation (average)

Tj

=junction temperature °C

mW/°C = derating factor

VcEo = max collector voltage, collector to emitter, base open

VcBo = max collector voltage, collector to base, emitter open

= max collector current

= max collector current (peak)

= small-signal short-circuit forward current transfer ratio (commonemitter)

= de short-circuit forward current transfer ratio (common-emitter)

lco

=collector cutoff current (de), emitter

open

= output capacitance (common emit ter)

Cob

= output capacitance (common-base)

tr

=rise time

ts

=storage time

VoE( sat ) = collector-to-emitter saturation volt-

gm

age transconductance

VP

= pinch-off voltage

lnss BVnao

= zero-bias drain current =drain-gate breakdown voltage with
gate-source open-circuited

BVnas = breakdown voltage from drain to gate with drain shorted to source

= common source short-circuit input capacitance

N.F. = noise figure

'1]

= intrinsic standoff ratio

IEo

= max emitter reverse current

Ip

=max peak point emitter current

VE(Rat)
V ER2
Vo B1

= max emitter saturation voltage
= min emitter reverse voltage
= min base one peak pulse voltage

ELECTRONIC DESIGN

olitron
announces a family of
90 Amp NPN Silicon Planar Power Transistors featuring fast switching, high voltage capabilities with
Pr==350W @25°C!

DESIGN LIMITS

Type Number
MHT8920 MHT8921 MHT8922 MHT8923

PT
~
Watts
~
Case
Max.
350
350
350
350

BVeeo
Volts le= lmA
Min. 80 100 120 140

VeEo
(SUS)
Volts le= 0.2A
Min. 60 80
100 120

50°C Case

le= 2mA

2N3149

300

80

80

2N3150

300

100

100

2N3151

300

150

150

BVEBO
Volts IE=lmA
Min. 8 8 8 8
10 10 10

PERFORMANCE SPECIFICATIONS

h FE

VBE (sat)

VeE (sat)

leeo

le= 75A Min. 10 10 10 10

le =90A Min. 5 5 5 5

Volts

Volts

le = 50A, I e = 5A

Max.

Max.

2.0

1.5

2.0

1.5

2.0

1.5

2.0

1.5

,,.A Vee= 60V
Max. 10 10 10 10

fT
MHi!
Typ . 20 20 20 20

le= SOA

10

-

10

-

10

-

le= 50A, le =lOA

2.5

1.5

2.5

1.5

2.5

1.5

Vee= RATED 2000 2000 2000

MIN . 0.1 0.1
o.~

E3 olitron TRANSISTOR DIVISION DEVICES, INC.
1177 BLUE HERON BLVD. I RIVIERA BEACH, FLORIDA I (305) 848-4311 / ·TWX: (510) 952-6676

Leader in Germanium and Silicon Power Transistors, Cryogenic Thermometers, High Voltage Rectifiers, Hot Carrier Diodes, Temperature Compensated Zeners, Voltage Variable Capacitors, Random/White Noise Components, Microelectronic Circuits, and High-Pac Interconnection Systems.

ON READER-SERVICE CARD CIRCLE 6

May 17, 1966

19

Key to Transistor Types
Construction
AE Annular epitaxial AJ Alloy junction AD Alloy diffused DD Double diffused DG Grown diffused DJ Diffused junction OM Diffused mesa DOM Double-diffused mesa DP Diffused planar DR Drift ED Electro-chemical diffused-collector EM Epitaxial mesa EP Epitaxial FA Fused alloy FJ Fused junction

GD Grown diffused GJ Grown junction GR Rate grown MB Meltback MD Micro-alloy diffused base MS Mesa PE Planar epitaxal PL Planar SBT Surface barrier SP Surface precision alloy TOP Triple-diffused planar PADT Past alloy diffused technique
Materials
ge germanium si silicon

New DC Scope! 1
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A 5" DC scope with calibrated

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rr FREE CATALOG.'

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I Heath Company, Dept, 60-5
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J

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ON READER-SERVICE CARD CIRCLE 7
20

FREE FOLDER
ECCOSHIELD® RF SHIELDING MATERIALS
" .
Brand new six page folder in color describes a complete line of Eccoshield products to combat RFIconductive plastic sheet and gaskets, adhesives, coatings, caulking compounds, metallic foil-the works.
This valuable Folder is yours. Write or use Reader Service Card.
EMERSON & CUMING, INC ·
· Canton, Massachusetts · 604 W. 182d St., Gardena, Calif. · 9667 Allen Ave., Rosemont, Ill.
Emerson &Cuming Europe N. V. Oml, Belgium
ON READER-SERVICE CARD CIRCLE 8
ELECTRONIC DESIGN

Manufacturers and their Ii nes

Manufacturer

Symbol

Audio A

High-Frequency HF

Power p

Low-Level LL

High-Level HL

Field-Effect Unijunction

FET

UJT

Amel co Amperex Bendix

AL

·

·

AMP

·

·

BE

·

Burroughs

BU

Continental Device

CDC

·

·

Crystalonics

CT

·

·

Delco

DE

Dickson

DIC -

Electronic Transistor

ETC

·

·

Fairchild

FA

·

·

General Electric

GE

·

·

General Instrument

GI

·

·

General Micro-electronics GME

·

·

Hughes

HU

ITT Semiconductors

ITT

·

lndustro Transistor

IND

·

·

International Electronics

IEC

·

·

KMC Semiconductor

KMC

·

KSC Semiconductor

KSC

·

Lansdale Motorola

LAN

·

·

MO

·

·

National Semiconductor

NA

·

·

Nucleonic Products

NUC

·

·

Philco

PH

·

Radio Corp. of America

RCA

·

·

Raytheon Siemens America

RA

·

·

SA

·

·

Silicon Transistor

STC

·

Siliconix

SI

Solid State Products

SSP

·

Solitron

SOL

Sperry Semiconductor

SSD

·

·

Sprague

SPR

·

·

Sylvania

SY

·

·

Texas Instruments

Tl

·

·

Transitron

TR

·

·

TRW Semiconductors

TRWS

·

·

Union Carbide

UC

·

·

Vector

VEC

·

Westinghouse

WH

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

· ·

. ·
.

· ·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·
·
· ·
· · ·
I

·

·

·

·

·

·

·

· ·

May 17, 1966

21

Audio and General Purpose
Mostly audio and general-purpose types handling less than one watt. Listed in order of increasing forward-current transfer ratio.

Cross

Index

Type

Key

Ho.

Mfr.

Type

MAX. RATINGS

CHARACTERISTICS

p

VCEO

* VCBO I,

I co

fae

Packoge

*fr Outline

(mw)

mW / °C (V) (mA)

(MHz) (TO-)

Remarks

2N 1439

NA

pnp,A,si

5-12

2N 1223

SSD AJ

6

A 1 NS-664

NA

pnp,A,si

7·22

NS-668

NA

pnp,A,si

7·22

2N927

NA

pnp,A,si

8-22

400

200

2.25 50

100 .025

25(}

175

1.67 40

100 0.1

400

175

2.5 50

100 1

150

175

l

50

100 1

150

200

.85 60

100 .025

5

CT

5

CT, SPR

5

Industrial Type

18

Industrial Type

18

SPR

2N935 2N938 2N 1024 2Nl025 2t-il028

SSD AJ SSD AJ SSD AJ SSD AJ SSD AJ

*9

385

160

2.85 40

50 0.1

0.2

18

CT, SPR

9

250

175

1.67 35

50 .025

9

250

175

1.67 15

100 .025

9

250

175

1.67 35

100 .025

9

250

175

1.67 10

10 0 .025

18

CT, SPR

5

AMP, CT,SPR

5

AMP, CT, SPR

5

CT, SPR

A 2

2Nll54

Tl

npn,si

9

750

150

6

*50 60 5

2Nll55

Tl

npn,si

9

750

150

6

*80 50 5

2Nll56

Tl

npn,si

9

750

150

6

*120 40 5

2N 1220

SSD AJ

*9

250

175

1.67 25

100 0.1

2N 1222

SSD AJ

9

250

175

1.67 25

100 0.1

TR, NA, ETC TR, NA, ETC TR, NA, ETC CT, SPR CT, SPR

2Nl586

Tl

npn,si

9

2N 1587

Tl

npn,si

9

2N 1588

Tl

npn,si

9

2N332A

GE

npn,DG,si

9-20

2N 1440

NA

pnp,A,si

9-22

A3

2N2673

GE

pnp, DG,si

9·22

2N 1394

GI

pnp,ge

10

2N 1408

GI

pnp,AJ,ge

*10

2N 1643

CT

pnp,si

*10

2Nl672A

GI

npn,AJ,ge

*10

125

87 .5

2

10

25 1

125

87.5

2

20

25 1

125

87.5

2

40

25 1

500

175

3.33 45

25 .5

400

200

2.25 50

100 .025

250

175

1.66 *60 25 .1

50

0.8 *10

15

150

100

2

*50

7.0

250

160

1.9 25

50 .001

120

85

2

*55

25

TR, ETC

TR, ETC

TR, ETC

5

TR

5

AMP, CT

46

MO

BCZ12

AMP pnp,AJ,si

10

250

150

2

60

50 0.1

2N925 2N470 2N471 2N472

NA

pnp,A,si

TR

npn,PL,si

TR

npn,PL,si

TR

npn,PL,si

10-24 10-25 10-25 10-25

150 200
200 200

200

.85 40

100 .025

175

1.2

15

25 .5

8

175

1.2 30

25 .5

8

175

1.2 45

25 .5

8

1

18

SPR

5

5

5

A4

2N472A

TR

npn,PL,si

10-25

200

175

1.2 45

25 .5

2N 1082 2N102

TR

npn,PL,si

SY

npn,AL,ge

*10-50 *10.5

200 1000

175 75

1.5 *25 50 .5 *30 1500 500

2Nll7

Tl

npn,si

12

150

175

*45 25 2

2N332

Tl

npn,si

12

150

175

*45 25 2

8

5

17.2

5

13

TR

GE;TR

2Nl474 2Nl476

SSD AJ SSD AJ

12

250

175

1.67 60

100 .050

12

250

175

1.67 100 100 0.2

2N756

NA

npn, DM,si

12-22

500

200

2.5 45

100 0.2

2N756A

NA

npn,DM,si

12·22

500

200

2.5 60

100 0.1

2N923

NA

pnp,A,si

12·30

150

200

.85 25

100 .025

AS

NS-731

NA

npn,DM,si

12·55

400

175

2.5 15

100 1

NS-733

NA

npn,DM,si

12-55

400

175

2.5 30

100 1

2Nll49

Tl

npn,si

12.3

150

175

1

*45 25 2

2N726

Tl

npn,si

15

300

175

2

20

50 1

2Nl248

TR

npn,PLE,si

*15

30

150

.24 6

5

.01

5

CT, AMP, SPR

5

CT, SPR

18

TR

18

TR

18

SPR

18

lndustri al Type

18

Industrial Type

TR

18

5

GE

2N 1311

GI

npn,AJ,ge

*1 5

2N 1655

RA

pnp,si

*15

2N2177

SSD AJ

*15

2N2178

SSD AJ

*15

2N2370

NA

pnp,A,si

*15

AG

2N2372

NA pnp,A,si

*15

2N239 l

Tl

pnp,si

15

BCY30

AMP pnp,AJ,si

15

BCY33

AMP pnp,AJ,si

15

120

85

2

*75

7.0

1.5

5

Tl

250

160

1.85 125 50 1.0

.050

5

CT,SPR

100

175

.67 6

50 .005

5

CT, SPR

100

175

.67 6

50 .005

200

200

1.0 15

100 .005

18

CT, SPR

5

Low Level, Low Noise, AMP, CT,

SPR

150

200

300

175

250

150

250

150

15

100 .005

18

Low Level, Low Noise, CT, SPR

20

50 10

50

*64 100 .1

.25

5

*32 100 .1

.4

5

BCZ13

AMP pnp,AJ,si

15

2N529

GI

-

15-20

NS-663

NA pnp,A,si

15·36

NS·667

NA pnp,A,si

15-36

MA885

MO

pnp,AJ ,ge

15-40

85

.9

*20 10 .01

100

85

2

*15

5.0

400

175

2.5 50

100 1

150

175

1

50

100 1

200

100

2.67 *50 500 15

1.5

Sub min case

2.5

5

5

Industrial Type

18

Industrial Type

t 0 .5

5

tfab

A7

2N243

Tl

npn,si

16

750

150

6

*60 60 1

-

-

TR, NA

2N936

SSD AJ

*18

385

160

2.85 35

50 0.1

-

18

CT, SPR

2N939

SSD AJ

18

250

175

1.67 35

50 .025

-

18

CT, SPR

.__ __,L-~N_Ni_~~-~--'----~~-~_.__~~---~-i-~_ __.__~-~~-_..__g_~__.__i_:~~_.__r~___,___rn_~-+---:~_~_~-----'---=-~---~-- J-~£~~~---·------'

(see pages 4-9 for explanation of company abbreviations.)

22

ELECTRONIC DESIGN

Audio (continued)

Cross

Index Type

Key

Ho· . Mfr.

Type

2Nl219 2Nl221 2N 1474A 2Nl441 2N757 AB 2N333A 2N2674 2N928 2N334A 2N758
2N758A 2N734 2N738 2N 1273 2N 1274 A9 2Nl310 2Nl312 2Nl372 2N 1373 2Nl380
2Nl381 2N 1383 2N 1445 2Nl564 2Nl572 A 10 2N 1672 2N2371
2N2373 2N3579
2N3877 2N3877A Al30 A310 A311 A 11 BCY38 2N530 ZN2042 2N2042A 2N926
2N339A 2N340A 2N341A 2Nll8 2N333
A 12 2Nll50 2N924 NS-662 NS-666 ZN330A
2N563 2N564 2Nl589 2Nl590 2Nl591
A 13 2Nl623 2N2304 2N2617 2N2831 BCY31
BCY34 SA2 253 2N531 2N658 2N 306
A 14 2N 2860 2N 279 2N662 2N7 27 ZN 1477

SSD AJ SSD AJ SSD AJ NA pnp,A,si
NA npn,DM,si

GE npn,DG,si GE npn,DG ,si
NA pnp,A,si
GE npn,DG,si
NA npn,DM,si

NA npn,DM,si

Tl

npn,si

Tl

npn,s i

Tl

pnp,ge

Tl

pnp ,ge

GI

npn,AJ,ge

GI

npn,AJ,ge

Tl

pnp ,ge

Tl

pnp ,ge

Tl

pnp ,ge

Tl

pnp,ge

Tl

pnp,ge

Tl

npn,si

Tl

npn,s i

Tl

npn,si

GI

npn ,AJ, ge

NA pnp,A,si

NA pnp,A,si SSD pnp ,EP

GE npn,PL,si GE npn,PEP,si AMP npn ,PL,si AMP npn, PL,si AMP npn,PL,si

AMP pnp,AJ,si

GI

-

MO pnp,AJ,ge

MO pnp ,AJ ,ge

NA pnp,A,si

TR npn,PL,si

TR npn,PL,si

TR npn,PL,si

Tl

npn,si

Tl

npn,si

Tl

npn,si

NA pnp,A,si

NA pnp,A,si

NA npn,A,si

RA pnp,si

GI

pnp , AJ,ge

GI

pnp,AJ,ge

Tl

npn,si

Tl

npn,si

Tl

npn,si

RA pnp,si

RA npn,PL,si

AMP pnp,si

SY

npn,PE,si

AMP pnp,AJ,si

AMP pnp ,AJ,si

AL npn ,si

GI

-

Tl

pnp,AJ ,ge

SY

npn,AL,ge

SY

npn,PE ,si

AMP pnp,AJ,si

Tl

pnp,AJ,ge

Tl

npn,si

SSD AJ

hie

p c

*hFE

(mW)

*18

250

18

250

18

250

18-36

400

18-40

500

18-44

500

18-44

250

18-55

150

18-90

500

18-90

500

18-90

500

20

500

20

500

20

150

20

150

*20

120

*20

120

*ZO

250

*zo20

250 250

zo

250

20

200

*20

800

20

600

20

600

*20

120

*20

200

*20

150

*20

400

*20 min . 200

*20 min.

200

*20

360

*20

300

*20

300

*20

120

20-25

100

*20-50

200

*20-50

200

20-55

150

*20-80

250

*20-80

250

*20-80

250

24

150

24

150

24

150

24-60

150

24-60

400

24-60

150

25

380

25

150

25

120

25

125

25

125

25

125

"'25

250

*25

600

*25

350

*25

360

25

Z50

25

250

*25

-

25-30

100

*25-80

250

*25-125

180

*25-125

200

30

125

*30

250

30

300

30

250

May 17, 1966

MAX. RATINGS

T. )

VCEO *VCBO Ic

(acl mW/ °C (V) (mA)

CHARACTERISTICS

Ico

fae Package *fT Outline

(/1A)

(MHz) (TO-)

Remarks

175 175 175 200 200
175 175 200 175 200
200 175 175 85 85
85 85 100 100 100
100 85 200 175 175
85 200
2z0o0o
100 100 200 175 175
150 85 100 100 200
175 175 175 175 175
175 200 175 175 160
85 85 87.5 87.5 87 .5
160 300 150 175 150
150 150 85 100 85
175 75 100 175 175 J

1.67 25

100 0.1

-

1.67 25

100 0.1

-

1.67 60

100 .050

-

2.25 35

100 .025

-

2.5 45

100 0.2

-

5

SPR

5

CT, SPR

5

CT , SPR

5

AMP, CT

18

TR, GI

3.33 45

25 .5

11

1.66 *60 25 .1

-

.85 60

100 .025

-

3.33 45

25 .5

12

2.5 45

100 0.2

-

5

TR

46

18

SPR

5

TR

18

TR, GI

2.5 60

100 0.1

-

18

GI

3.33 60

50 . 1

-

18

TRWS, TR

3.33 80

50 1

-

18

TR

2.5 *15 150 14

-

5

2.5 *25 150 14

-

5

2

*90 -

7

1

5

Tl

2

*50 -

7

2

5

Tl

3.3 *25 200 -

-

5

3.3 *45 200 -

-

5

3.3 *12 200 14

-

5

3.3 *25 200 14

-

3.3 *25 200 14

-

4.57 *120 750 10

-

4

60

50 1

-

4

80

50 1

-

2

*40 -

25

z

1.0 15

100 .005

-

1

15

100 .005

-

2.28 60

30 0.05

80

5

5

5

5

TRWS, TR

5

TR

5

5

Low Level, Low Noise, AMP, CT.

SPR

18

Low Level, Low Noise, CT, SPR

46

Z.67 70

50 0.5

2.67 85

50 0.5

2

*90 -

-

2

*135 -

.5

2

*80 -

.5

z

*32

2

*15

*2.67 105

*Z.67 105

.85 40

250 .1

-

5

200 10

200 10

100 .025

135

98

135

98

30

5

50

5

30

5

.45

5

3

5

-

5

Tl

-

5

Tl

-

18

SPR

3

60

150 1

3

85

150 1

3

125 150 1

1

*45 25 2

1

*45 25 2

10

11

10

11

10

11

-

-

TR

-

5

GE, TR

1

*45 25 2

.85 25

100 .025

2.5 40

100 1

1

40

100 1

2-9 ·30

50 0.1

-

-

TR

-

18

-

5

lndustri al Type

-

18

Industrial Type

0.05

5

SSD, AMP, CT

2.5 *30 300 5

2

*30 300 5

2

10

25 1

2

20

25 1

2

40

25 1

0.8

-

0.8

5

IND

-

-

TR

-

-

TR

-

-

TR

1.85 20

3-4 30

2

*25

-z

*40 *64

50 1.0

250 .010

z5o0 o

.001 .30

100 .1

0.05

5

CT, SPR

10

5

3

-

250

18

TRWS

.Z5

5

2

*32

-

*40

2

*15

6.66 12

-

*20

100 .1

-

.05

-

5.0

1000 6

-

20

.6

5

-

5 ·

3.5

5

-

5

.600

22

-

*30

2.5 30

6.66 12

2

20

1.67J 100

-

1

10 110

100 6

50 1

100 0.2

*1000 18

0.15

1

-

5

-

18

-

5

Low Noise CT, SPR

(see pages 4-9 for explanation of company abbreviations.)

23

Audio (continued)

Cross

Index Type

Key

Ho.

2Nl654 2Nl656 2N2173 2N2173 2N2392
A 15 2N2599A BCY39 BCZ14 2N532 2N 1101
2Nl102 2N 1442 2N650 2N650A 2N653
A 16 2N 1186 2Nl191 MA881 MA886 2N2711
2N2713 MPS2711 MPS2715 2Nl051 2Nl707
A 17 2N244 2N405 2N406 2N780 2Nl010
2N2389 BCY32 2N533 40234 AC 121
A 18 2N2926 MPS2926 2N937 2N940 2Nl469
2Nl475 2N759 2N759A 2N335A 2N2675
A 19 2N334 2Nll51 2N735 2N739 2N934
2Nl370 2Nl371 2Nl374 2Nl375 2Nl382
A 20 2Nl413 2Nl565 2Nl573 2Nl622 2N2868
2N2909 2N3064 2N3065 2N3580 A306
A 21 BCYll BCY12 ME900 SFT325 2N480A

Mfr.

Type

RA pnp,si

RA pnp,si

Tl

pnp,ge

MO pnp,ge

Tl

pnp,si

SSO pnp,EP

AMP pnp,AJ,si

AMP pnp,AJ,si

GI

-

SY

npn,AL,ge

SY

npn,AL,ge

NA pnp,A,si

MO pnp,AJ,ge

MO pnp,AJ,ge

MO pnp,AJ,ge

MO pnp,AJ,ge MO pnp,AJ,ge MO pnp,AJ,ge MO pnp,AJ,ge GE npn,PL,si

GE npn,PEP,si
MO npn,EP,si MO npn,EP,si
npn,00,si
MO pnp,AJ ,ge

Tl

npn,si .

RCA pnp,AJ,ge

RCA pnp,AJ,ge

Tl

npn,si

RCA npn,AJ,ge

Tl

npn,si

AMP pnp,AJ,si

GI

-

RCA npn,P,si

SA

pnp,AJ,ge

GE npn,PL,si MO npn,EP,si SSO AJ
SSO AJ SSO AJ

SSO AJ NA npn,OM,si NA npn,OM,si GE npn,OG,si GE npn,OG,si

Tl

npn,si

Tl

npn,si

Tl

npn,si

Tl

npn,si

RCA pnp,MS,ge

Tl

pnp,ge

Tl

pnp,ge

Tl

pnp,si

Tl

pnp,ge

Tl

pnp,ge

GE pnp,AJ,ge

Tl

npn,si

Tl

npn,si

GI

npn,AJ,ge

GE npn,PE,si

GE pnp,PE,si CT pnp,si CT pnp,si SSO pnp,EP AMP npn,PL,si

AMP pnp,AJ,si AMP pnp,AJ,si AMP npn,PL,si NUC pnp,ge TR npn,PL,si

24

hfe

p c

*hFE

(mW)

·30

250

·30

250

*30

240

·30

240

30

300

·30

400

*30

120

30

85

30-35

100

*30-SO

180

*30-SO

180

3o-65

400

30-70

200

30-70

200

30-7G

200

30-70

200

30-70

200

30-70

200

30-70

200

30-90

200

*30-90

200

*30-90

310

·30-90

310

30-100

500

30-150

200

32

750

35 .

150

35

150

*35

300

35

20

35

450

35

100

35-40

100

35-180

500

35-190

900

t35-470 200

35-470

310

*36

385

36

250

36

250

36

250

36-90

500

36·90

500

37-90

500

37·90

250

39

150

39

150

40

500

40

500

*40

150

40

150

40

150

40

250

40

250

40

200

*40

200

40

600

40

600

*40

120

4Q

2800

40

2800

40

400

40

400

·40

400

40

360

40

310

40

310

40

360

*40

500

40-100

200

MAX. RATINGS

CHARACTERISTICS

T.
J

VCEO

*VCBO Ic

Ico

(oc) mW/ °C (V) (mA) (J1A)

fae *fy (MHz)

Package Outline
(TO-)

Remarks

160

1.85 80

50 1

160

1.85 125 50 1

100

3.2 15

750 10

100

3.2 15

750 10

175

2

20

50 10

.050

5

CT, SPR

.050

5

CT, SPR

-

5

-

5

-

50

200

2.28 100 30 0.025

60

46

150

2

*69 250 .1

.85

5

-

.9

·20 10 .01

1.5

-

sub min case

85

2

*15 -

5

4.0

5

85

-

·20 100 50

.10

22

"''"'·

85

-

*40 100 50

0.10

22

200

2.25 30

100 .025

-

5

CT

100

2.67 ·45 500 10

-

5

Tl

100

2.67 ·45 500 10

-

5

Tl

100

2.67 *30 250 15

1

5

Tl

100

2.67 *60 500 10

100

2.67 *40 200 15

100

2.67 *60 500 10

100

2.67 *50 500 15

100

2.67 18

100 .5

-

5

-

5

Tl

t0.75 5

ttab

-t0.75

5 98

ttab NUC

100

2.67 18

200 0.5

-

98

Full line spread

135

2.81 18

100 0.5

135

2.81 18

25 0.5

--

92 92

150

4

40

100 .1

4

5·

NA

100

2.66 *30 400 15

t4

5

ttab

150

6

*60 60 1

71

-

*20 35 14

71

-

·20 35 14

175

2

45

50 0.01

55

-

*10 2

10

-

-

TR, NA

0.65

40

0.65

1

LAN

-

18

AL

2

1

LAN

200

2.57 *75 500 0.01

-

50

150

2

*64 50 -

4

9

85 175

2.0 *15 -

5

4;5

3.3 18

100 0.5 (max) *60

5
-

90

20

20

300 5

1.5

1

100

2.67 -

100 0.5

-

135

2.81 18

100 0.5

-

160

2.85 30

50 0.1

-

175

1.67 35

50 .025

-

175

1.67 35

100 .025

-

18

NUC, tFull linespread, GME

92

18

CT,SPR

18

CT, SPR

5

CT, SPR

175

1.67 60

100 .050

-

200

2.5 45

100 0.2

-

200

2.5 60

100 0.1

175

3.33 45

25 .5

--

175

1.66 *60 25 .1

-

5

AMP, CT, SPR

18

TR, GI, Tl

18

SPR, GI, Tl

5

TR

46

175

1

*45 25 2

-

5

GE;TR

175

1

*45 25 2

-

-

TR

175

3.33 60

50 1

-

18

TRWS, TR,

175

3.33 80

50 1

-

18

TR,

-

-

13 - -

-

18

85

2.5 25

150 14

-

5

85

2.5 45

150 14

-

5

100

3.3 *25 200 7

-

5

100

3.3 *45 200 7

-

5

85

3.3 *25 200 14

-

5

85

3.33 *35 200 12

-

5

175

4

60

50 1

-

5

TRWS, TR

175

4

80

50 1

-

5

TR

85

2

*90 -

7.0

1

5

200

16

40

1000 .010

130

5

200

16

40

1000 .010

130

46

200

2.3 *llO 100 .01

-

46

200

2.3 110 100 .01

-

46

200

2.28 60

30 0.05

80

46

200

2

*25 -

.01

100

18

150

2.5 60

500 0.1

150

2.5 32

500 0.1

200

2

*40 -

.01

85

-

*32 500 30

175

1.2 45

25 .5

1.5

1

1.5

1

100

18

-

1

20

5

GE

(see pages 4-9 for explanation of company abbreviations.)

ELECTRONIC DESIGN

Audio (continued)

Crass

Index Type

Key

Ho.

Mfr,

Type

hfe

p c

*hFE

(mW)

A 22
.- l "

2N2043 2N2043A 2N659 2N2244 2N2247
2N2250 2N2253 2N4030 2N403J NS·732

MO pnp,AJ,ge

MO pnp,AJ,ge

Tl

pnp,AJ,ge

NA npn,DM,si

NA npn,DM,si

NA npn,DM,si

NA. npn,DM ,si

FA

pnp ,PE,si

FA pnp,PE,si

NA npn,DM,si

*40-100

200

*40-100

200

*40-110 250

40-120

500

40-120

500

40-120

500

40-120

500

40-120

800

40· 120

800

40-125

400

NS-734

NA npn,DM,si

40-125

400

2Nll92

MO

pnp,AJ,ge

'40-135

200

2N3691

FA npn,PL ,si

*40-160 625

OC79

AMP pnp,PADT,ge 42

0.55

2N104

RCA pnp,AJ,ge

44

J50

A 23

2N215

RCA pnp,AJ,ge

44

150

2N3709

Tl

npn,PE ,si

*45-165

250

MPS3709

MO

npn,EP,si

*45-165

3JO

2N3708

Tl

npn,PE,si

*45-660

250

MPS3708

MO

npn,EP,si

*45-660

3JO

2N280

AMP pnp,AJ,ge

47

125

OC71N

AMP pnp,AJ,ge

47

110

2Nll9

Tl

npn,si

49

J50

2N335

Tl

npn,si

49

J50

2Nll52

Tl

npn,si

49

J50

A 24

2N917

FA npn,DP,si

50

300

2N918

FA npn,PE,si

*50

300

2Nl443

NA pnp,A,si

50

400

2N2616

FA npn,PE,si

*50

800

2N2729

FA npn,PE,si

*50

800

2N3581 A569 A570 Al341 BC410
A 25 ME216 NS-661 NS-665 2N214 2Nl059

SSD pnp,EP AMP npn ,PL,si AMP npn ,PL,si
AL npn ,si AMP pnp,AJ ,si

AMP npn,PL,si

NA pnp,A,si

NA pnp,A,si

SY

npn,AL,ge

SY

npn,AL,ge

*50

400

*50

300'

*50

300

*50

200

50

310

50

360

50

400

50

150

*50-100

180

*50·100

180

2N651 2N651A 2N 1187 MA882 MA887
A 26 2N654 2N27ffi PA1001 40232 BC 122

MO pnp,AJ,ge

MO

pnp,AJ,ge

MO

pnp,AJ,ge

MO

pnp,AJ,ge

MO

pnp,AJ ,ge

MO pnp,AJ,ge

MO

pnp,AJ ,ge

AL npn,DP ,si

RCA npn,P,si

SA

npn,PE,si

50-120

200

50-120

200

50-120

200

50-120

200

50·120

200

50-125

200

50-150

200

*50-150 -

50-180

500

50-400

75

2N51i5 2N566 2N2717 OC58 2N3394
A 27 MPS3394 MPS3397
MPS3398 2Nl69 2N449

GI

pnp,AJ,ge

GI

pnp,AJ,ge

GE npn,PL,si

AMP pnp,AJ ,ge

GE

npn,PL,si

MO

npn,EP,si

MO npn,EP,si

MO npn,EP ,Si

GE npn ,GR ,ge

GE npn ,GR,ge

55

150

55

120

55

200

55

20

*55-110

200

*55-110

310

*55-500

310

*55-800

310

*60

65

*60

65

2N736A

Tl

npn,si

60

500

2N929

Tl

npn,si'

60

300

2N957

FA npn,DD,si

*60

800

2Nl097

GE pnp ,AJ ,ge

*60

175

2Nl098

GE pnp,AJ ,ge

*60

175

A 28

2Nll21

GE npn ,GR,&e

*60

65

2Nl376

Tl

pnp,ge

60

250

2Nl377

Tl

pnp,ge

60

250

2Nl414

GE pnp,AJ,ge

*60

200

2Nl566A Tl

npn ,si

60

600

May 17, 1966

MAX. RATINGS

CHARACTERISTICS

,T.

VCEO

*VCBO IC

Ica

(oc) mW/ °C (V) (mA) (11A)

fae Package
*fr Outline (MHz) (TO-l

Remarks

100

2.67 105 200 10

100

2.67 105 200 10

100

6.66 12

1000 6

200

2.5 20

100 .01

200

2.5 45

100 .01

0.75

5

Tl

0.75

5

Tl

-

5

-

18

Low Level

-

18

Low Level

200

2.5 20

100 .OJ

200

7.5 45

JOO .OJ

200

22.8 60

-

.2

200

22.8 80

-

.2

175

2.5 15

JOO 1

-

J8

LowNoise, CDC

-

J8

Low Noise, CDC, AMP

JOO

5

150

5

-

18

Industrial Type

175

2.5 30

100 J

100

2.67 *40 200 J5

J50

2

*35 50 .05

75

1.2 *26 0.3 JO

70

-

*30 50 JO

-

J8

Industrial Type

-

5

*200

-

Tl R097A package, CDC

1.2

J

0.7

40

70

-

*30 50 10

125

2.5 30

30 O.J

135

2.81 30

30 0.1

125

2.5 30

30 0.1

135

2.81 30

30 OJ

0.7

J

--

t

t Pl asti c

92

-

t

t Plastic

-

92

75

2.5 30

JO 150

0.1

-

Special Case

75

0.45 30

JO -

-

J

175

1.19 *45 25 J

-

-

TR

175

J

*45 25 2

-

5

GE , TR

175

1

*45 25 2

-

-

TR

200

l.7J J5

-

0.0005 *800

J8

Tl , RCA , AL, TRWS

200

1.71 J5

50 0.002

*900

J8

MO , Tl , RCA, AL, TRWS

200

2.25 J5

JOO .025

-

5

CT

200

4.56 15

50 0.002

*900

J8

AL

200

4.56 15

50 0.002

900

18

AL

200

2.28 40

30 0.02

30

46

175

2

*20 -

.01

100

18

Chopper, &Voff,=50µV

175

2

*20 -

OJ

100

18

Chopper, Voff,=lOOµV

150

-

*75 -

.010

-

18

150

2.5 32

500 OJ

1.5

1

200

2

*20 -

.5

175

2.5 30

100 1

175 85

1
-

I 30

100 1

*40 100 50

85

-

*20 100 20

100

18

-

5

Industrial Type

-

18

Industrial Type

.01

22

.10

22

100

2.67 *45 500 10

100

2.67 *45 500 JO

100

2.67 *60 500 10

100

2.67 *60 500 JO

100

2.67 *50 500 15

-

5

Tl

-

5

Tl

2

5

t l.O

5

t tab

t l.O

5

t tab

100

2.67 *30 250 15

-

5

100

2.66 *25 400 JO

t3

5

t tab

200 175

2

*60 -

.010

.33 18

100 0.25

*60

1-8

125

5.0 20

50 0.01

250

-

85

2.5 *30 300 5

85

2.0 *30 300 5

100

2.67 -

100 0.5

75

1.5 7

5

1.5

100

2.67 25

100 OJ

1

-

1

5

IND

-

J8

1.6

-

Sub min case

-

98

Epoxy case

135

2.81 25

100 0.1

-

92

135

2.81 25

100 0.1

-

92

135

2.81 25

100 0.1

-

92

85

1.1

15

20 -

8

85

1.1

15

20 -

8

-

175

3.33 60

100 0.5

-

18

TR

175

2

45

30 0.01

-

18

FA, GI , TR, AL ,SPR, UC, MO

150

6.5 20

-

1.0

250

18

TRWS, AMP

-

2.9 *16 200 16

-

5

-

2.9 *16 200 16

-

5

85

1.1

15

20 -

8

-:

100

3.3 *25 200 7

-

5

100

3.3 *45 200 7

-

5

85

3.33 *35 200 12

-

5

175

4

60

JOO 0. 1

-

5

(see pages 4-9 for explanation of company abbreviations.)

25

Audio (continued)

Cross

Index Type

Key

No.

Mfr.

Type

hfe

pc

*hFE

(mW)

2N2387 2N2600A

Tssl o

npn,sr pnp,EP

60 *60

300 400

BCZlO

AMP pnp,AJ,si

60

250

BCZll

AMP pnp,AJ,,si

60

250

OC60

AMP pnp,AJ,ge

60

20

A '2.9

S15660

FA

npn,DPE,si

*60

600

SFT323

NUC pnp,ge

*60

200

SFT353

NUC pnp,ge

60

200

2N3858

GE npn,PEP,si

*60-120

200

2N3858A

GE

npn,PEP,si

*60-120

200

2N660 2N3721
MPS3721 2N2430 2N175
A 30 2N220 2N407 2N408 2N649 2N1924

Tl

pnp,AJ ,ge

GE. .npn,PL,si

MO npn,EP,si

AMP npn,ge

RCA pnp,AJ,ge

RCA pnp,AJ,ge

RCA pnp,AJ,ge

RCA pnp,AJ,ge

RCA pnp,AJ,ge

GE

pnp,ge

*60-150

250

60-660

200

6().660

310

*63

360

65

20

65

20

*65

150

*65

150

*65

100

*65

225

2N3062

CT pnp,si

65

400

2N3063

CT pnp,si

65

400

BCY40

AMP pnp,AJ,si

*68

120

2N270

RCA pnp,AJ,ge

*70

250

2N281

AMP pnp,AJ,ge

70

165

A 31

2N282

AMP pnp,AJ,ge

70

165

2N591

RCA pnp,AJ,ge

70

50

2N647

RCA pnp,AJ,ge

*70

100

2N 1592

Tl

npn,si

70

125

2N1593

Tl

npn,si

70

125

2N1594 2N3128 A1109 2Nll75A 2N 1705
A 32 2N213 2Nl251 2N109 2N217 2N412

Tl

npn,si

NA npn,PL,si

AL npn,si

MO pnp,AJ,ge

MO pnp,AJ,ge

SY

npn,AL,ge

SY

npn,AL,ge

RCA pnp,AJ,ge

RCA pnp,AJ,ge

RCA pnp,AJ,ge

70

125

70

150

*70

-

*70-140

200

70-150

200

70-250

180

*70-250

180

*75

150

*75

150

75

80

2N1378 2Nl379 40253 OC74 2Nl431
A 33 2Nll89 2N2712 2N2714 2N3402 2N3404

Tl

pnp,ge

Tl

pnp,ge

RCA pnp,AJ,ge

AMP pnp,AJ ,ge

SY

npn,AL,ge

75

250

75

250

*75

650

75

0.55

*75·150

180

MO pnp,AJ,ge

*75-175

200

GE

npn,PL,si

*75-225 200

GE

npn,PEP,si

*75-225

200

GE

npn,PE,si

*75-225

560

GE

npn,PE,si

*75-225

560

2N3414

GE

npn,PE,si

2N3416

GE

npn,PE,si

MPS2712

MO

npn,EP,si

MPS2716 MO npn,EP,si

2N336A

GE npn,OG,si

A 34 2N760 2N760A 2N2676 2N661 2N736

NA npn,OM,si

NA npn,DM,si

GE npn, OG,si

Tl

pnp,AJ ,ge

Tl

npn,si

*75-225

360

*75-225

360

*75-225

310

*75-225

310

76-333

500

76-333

500

76·333

500

76·333

250

*80

250

80

500

2N740

Tl

npn,si

80

500

2N1415

GE pnp ,AJ,ge

*80

200

2N 1566

Tl

npn,si

80

600

2N1574

Tl

npn,si

80

600

2N3462

AMP npn,si

*80

600

A 35 2N3463

AMP npn,si

*80

300

40261

RCA pnp,OR,ge

80

80

OC59

AMP pnp,AJ,ge

80

20

2N543A

TR npn,PL,si

80-200

200

2N2245

NA npn, OM,si

80·250

500

26

MAX. RATINGS

CHARACTERISTICS

T. )

VCEO

*VCBO Ic

Ico

(oc) mW/ °C '"' (mA) (/LA)

175

2

45

30 0.01

200

2.28 100 30 0.025

150

2

25' 50 0.1

150

2

25

50 0.1

75

1.5 7

5 1.5

fae *fy (MHz)
80 1 3 1.6

Package Outline
(TO-)
50 46 1 1 -

Remarks Sub min case

200

3.42 *40 1000 -

85

-

*24 250 15

85

-

*24 150 15

100

2.67 30

100 0.5

100

2.67 I 60

100 0.1

650

-

R083 package

-

1

-

1

-

98

-

98

100

6.66 12

1000 6

100

2.67 18

100 0.5

135

2.81 18

100 0.5

90

3.3 *32 30 -

71

-

*10 2 12

-

5

-

98

-

92

-

1

.85

40

71

-

*10 2 12

71

-

*20 70 14

71

-

*20 70 14

71

-

25

50 14

85

3.7 *60 500 10

0.85

1

-

40

-

1

LAN

-

1

LAN

-

5

200

2.3 *90 100 .01

200

2.3 *90 100 .01

150

2

*32 250 .1

50

-

*25 75 10

75

.3

*32 50 4.5

-

46

-

46

.85

5

1

7

0.9

1

75

.3

*32 50 4.5

71

-

32

20 7

71

-

25

50 14

87.5

2

10

25 1

87.5

2

20

25 1

0.9

1

Matched Pair 2N28l's

0.7

1

-

1

LAN

-

-

TR

-

-

TR

87.5

2

40

25 1

-

-

TR

150

1.2 20

100 .002

-

-

150

-

*45 -

.IO

100

3.33 *35 200 12

-

18 5

100

2.66 *18 400 10

t3

5

tfab

85

-

*40 100 50

85

-

*20 100 20

71

-

*25 70 7

71 71

-

*25 70 7

-

13

15 10

0.1

22

7.5

22

1

40

LAN

1

1

LAN

10

1

LAN

100

3.3 *12 200 7

-

5

100

3.3 *25 200 7

-

5

90

10

*25 500 14 (max) *1

1

75

.66

20

300 10

1.5

1

85

-

*25 100 20

.01

22

100

2.67 *45 500 10

-

100

2.67 18

100 0.5

-

100

2.67 18

200 0.5

-

150

4.47 25

500 OJ

-

150

4.47 50

500 0.1

-

5

98

NUC

98

98

Epoxy case, heat clip

98

Epoxy case, heat clip

150

2.67 25

500 0.1

-

98

Epoxy case

150

2.67 50

500 0.1

-

98

Epoxy case

135

2.81 18

100 0.5

-

92

135

2.81 18

25 0.5

-

92

175

3.33 45

25 .5

-

5

TR

200

2.5 45

100 0.2

-

18

TR, GI, AL

200

2.5 60

100 0.1

-

18

TR, GI, AL

175

1.66 *60 25 .1

-

46

100

6.66 12

100 6

-

5

175

3.33 60 ' 50 I

-

18

TRWS, TR

175

3.33 80

50 l

-

85

3.33 *35 200 12

-

175

4

60

50 1

-

175

4

80

50 I

-

200

1.7 35

50 0.07

-

18

TR,AL

5

5

TRWS, TR

5

TR

18

Low Noise

200

1.7 50

50 0.002

-

18

Low Noise

85

1.2 *50 10 12 (max) *40

1

75

1.5 7

5 1.5

2.2

-

Sub min case

175

1.2 50

25 .5

10

5

200

2.5 20

100 .01

-

18

Low Level

(see pages 4-9 for explanation of company abbreviations.)

ELECTRONIC DESIGN

Try a new source
for planar 2N2222 & N2369 farriilies

If you've been wishing for a new source of silicon planar general purpose amplifiers or high speed switches, ITT has now provided the answer.
ITT is in full production on the popular 2N2222 amplifier family and the 2N2369 highspeed switching family. You can have the same transistor performance you've been getting from other suppliers, plus the supplier

perfor ance you can only get from ITT. If y 're buying silicon planars from either
of the families, evaluate the new source. Order em today . . . get them today . . .
distributor of ITT Semiconductors. onductors, 3301 Electronics Way,
Beach, Florida, is a division of tional Telephone and Telegraph

F\CTO RIES IN PALO ALTO. CALIFORNIA; LAWRENCE. MASSACHUSETIS; WEST PALM BEACH . FLORIDA; HARLOW AND

May 17, 1966

ON READER-SERVICE CARD CIRCLE 9

/ITT SEMICONDUCTORS 27

Audio (continued)

Cross Index Key A 36
A 37
A 38
A 39
A 40
A 41
A 42

Type Ho.
2N2248 2N2251 2N2254 2N2715 2N3060
2Nll44 2Nll45 2Nl925 2N2431 2N3058
OC75N 2N2923 2N3393 MPS3393 40231
40233 2N3710 MPS3710 MPS3396 2Nl20
2N336 2N 1153 2N567 2N568 2N3130
2N3582 A307 ME213 ME217 ME900A
ME901 ME901A 2N508A 2N3859 2N3859A
2N652 2N652A 2N 1188 MA883 MA888
2N213A 2N655 2N 1193 2N4032 2N4033
PAlOOO 2N3692 2N3707 MPS3707 2N2716
40329 2N2171 2Nl926 2Nll90 BC 107
2N2903 2N2903A 2N2428 AC 163 2N2706
2N2707 AF 127 2N569 2N570 2N930
2N2388 2N2586 2N3129 40262 AC172

Mfr.

Type

NA npn ,DM,si NA npn,DM ,si NA npn,DM,si GE npn,PL,si CT pnp,si

GE pnp ,AJ ,ge

GE

pnp,AJ ,ge

I GE pnp,ge
AMP pnp,ge

CT pnp,si

AMP pnp,AJ,ge GE npn ,PL,si GE npn,PL,si MO npn,EP,si RCA npn,P,si

RCA npn, F,si

Tl

npn,PE,si

MO npn,EP,s i

MO npn,EP ,si

Tl

npn,si

Tl

npn,si

Tl

npn ,si

GI

pnp,AJ,ge

GI

pnp,AJ,ge

NA npn,PL,si

SSD pnp,EP AMP npn,PL,si AMP npn ,PL,si AMP npn,PL,si AMP npn,PL,si

AMP npn,PL ,si AMP npn ,PL,si MO pnp,AJ,ge GE npn,PEP,si GE npn,PEP,si

MO pnp,AJ,ge MO pnp,AJ,ge MO pnp,AJ,ge MO pnp ,AJ ,ge MO pnp ,AJ ,ge

SY

npn,AL,ge

MO pnp,AJ,ge

MO pnp,AJ,ge

FA pnp,PE,si

FA pnp,PE,si

AL npn ,DP ,si

FA npn,PL ,si

Tl

npn,PE ,si

MO npn,EP,si

GE npn,PL,si

RCA pnp,AJ,ge

MO pnp,AJ ,ge

GE

pnp ,ge

MO pnp,AJ ,ge

SA

npn,PE,si

AL npn ,DP ,si

AL npn ,DP,si

AMP pnp,ge

SA

pnp,AJ,ge

AMP pnp,AJ,ge

AMP ge

SA

pnp,AD,ge

GI

pnp,AJ,ge

GI

pnp,AJ,ge

Tl

npn,si

Tl

npn,si

Tl

npn,si

NA npn ,PL,si

RCA pnp,DR,ge

AMP npn,AJ,ge

hfe *hFE

p c (mW)

80-250

500

80-250

500

80-250

500

82

200

85

400

*90

175

*90

175

*90

225

*90

1000

90

400

90

110

90-180

200

*90-180

200

*90-180

310

90-300

500

90-300

500

*90-330

250

*90-330

310

*90-500

310

99

150

99

150

99

150

100

150

100

120

100

150

*100

400

100

360

100

360

100

360

100

360

100

360

100

360

*100-200 200

*100-200 200

100-200

200

100-225

200

100-225

200

100-225

200

100-225

200

100-225

200

100-250

180

100-250

200

100-250

200

100-300 800

100-300

800

*100-300 -

*100- 400 625

*100-400 250

*100-400 310

110

200

120

125

120-310

500

*121

85

.. 125-300 200

*125-500 260

*125-625 600

*125-625 600

130

500

*130

900

*135

500

*135

500

140

60

150

150

150

120

150

300

150

300

150

300

150

150

150

80

150

280

28

MAX. RAT IHGS

CHARACTERISTICS

Tj

VCEO

*vcso Ic

I co

(ocl mW/ °C (V) (mA) (11A)

fae
*fr (MHz)

Package Outline (TO -I

Remarks

200

2.5 45

100 .01

-

200

2.5 20

100 .01

200

2.5 45

100 .01

-

100

2.67 *18-18 100 0.5

-

200

2.3 *70 100 .005

-

18

Low Level

18

Low Noise, CDC

18

Lo w Noise

18

IEC, GME

46

85

2.9 *16 200 16

-

-

85

2.9 *16 200 16

85

3.7 *60 500 10

-
-

5

75

3.3 *32 1000 10

1.7

1

200

2.3 6

100 .0001

-

46

75

0.45 30

10 -

100

2.67 25

100 0.5

100

2.67 25

100 0.1

135

2.81 25

100 0.1

175

.33 18

100 0.5

175

.33 18

100 0.5

125

2.5 30

30 0.1

135

2.81 30

30 0.1

135

2.81 25

100 OJ

175

1

*45 25 2

-

1

-

98

IEC, GME

--

98

Epoxy case, GME

92

*60

-

*60

-

-

t

tPlastic

92

-

92

-

-

TR

' r, ,_

175

1

*45 25 2

-

5

GE, TR

175

1

*45 25 2

-

-

TR

85

2.5 *30 300 5.0

1.5

-

85

2.0 *30 300 5.0

1.5

5

IND

150

1.2 60

100 .002

-

-

200

2.28 40

30 0.02

30

46

200

2

*25 -

.01

100

18

200

2

*45 -

.1

100

18

200

2

*20 -

.5

100

18

200

2

*40 -

.01

100

18

200

2

*40 -

.01

200

2

*40 -

.01

100

3.33 *30 200 7

100

2.67 30

100 0.5

100

2.67 60

100 0.1

100

18

100

18

-·

5

-

98

-

98

100

2.67 *45 500 10

100

2.67 *45 500 10

100

2.67 *60 500 10

100

2.67 *60 500 10

100

2.67 *50 500 15

-

5

Tl

-

5

Tl

-

5

1.25

5

t fab

tl.25 5

tfab

85

-

*40 100 50

100

2.67 *30 250 15

100

2.67 *40 200 15

200

22.8 60

-

.2

200

22.8 80

-

.2

0.1

22

-

5

Tl

-

5

Tl

100

-

150

-

200

2

*30 -

.010

-

18

150

2

*35 50 .05

*200

-

R097A package, CDC

125

2.5 30

30 0.1

-

t

tPlastic

135

2.81 30

30 0.1

-

92

100

2.67 -

100 0.5

-

18

NUC, IEC, GME

100

2.8 *25 100 14 (max 1.5

1

100

6.7 *50 400 10

t 7.5

5

tfab

3.7

*60 500 10 -

-

5

100

2.67 *45 500 10

-

5

175

5.0 45

100 0.0007

150

18

200

3.5 *60 -

.010

-

5

Dual

200

3.5 *60 -

.010

-

5

Dual

75

0.3 32

100 -

1.7

1

90

20

24

200 10

2.3

1

90

0.37 *32 200 -

2.5

1

90

0.37 *32 200 -

2.5

1

Matched NPN, PNP Pair

75

2.5 32

10 1.2

75

18

85

2.5 *30 300 5

2

-

85

2.0 *30 300 5

2

5

IND

175

2

~5

30 0.01

-

18

FA, GI, TR, NUC, SPR, UC, MO

175

2

45

30 0.01

-

50

175

2

45

30 0.002

-

18

AMP, FA, AL, UC

150

1.2 45

100 .002

-

-

85

1.2 *50 10 12 (max *30

1

75

2.7 32 200 10

-

1

(see pages 4-9 for explanation of company abbreviations.)

ELECTRONIC DESIGN

========iJmliml!'J:im14 1-====-====-
After 130,000,000 diodes

1-amp glass rectifiers come easy

The basic technology required for making silicon glass rectifiers has long since been proved out in ITT's diode operation. More than 130,000,000 diodes last year paved the way for 1966 1-amp glass rectifier capability that's already operating at better than a 1.2 million annual rate.
If you're using old-fashioned top-hats because delivery is slow on D0-29 glass rectifiers, make the switch now.

ITT offers immediate shipment of 200 to 1000 V, 1-amp glass rectifiers from factory stock or from ITT distributors' shelves. See how fast silicon glass rectifier delivery can be - call your ITT factory representative or any of ITT's semiconductor distributors throughout the United States today. ITT Semiconductors, a division of International Telephone and Telegraph Corporation, 3301 Electronics Way, West Palm Beach, Florida.

ITT
SEMICONDUCTORS

FACTORIES IN PALO ALTO, CALIFORNIA; LAWRENCE. MASSACHUSETTS; WEST PALM BEACH. FLORIDA; HARLOW ·AND FOOTSCRAY . ENGLAND. FREIBURG AND NURENBERG . GERMANY

ON READER-SERVICE CARD CIRCLE 10

May 17, 1966

29

Audio (continued)

Cross Index Key A 43
A 44
A 45
A 46
A 47
A 48
A 49

Type

Ho.

Mfr.

2N2924

GE

2N3392

GE

2N3860

GE

2N4086

GE

MPS3392

MO

2N2246

NA

2N2249

NA

2N2252

NA

2N2255

NA

MPS3395 MO

2N2453

AL

2N2453A AL

2N3061

CT

2N2613

RCA

2N3241

RCA

2N3242

RCA

2N3403

GE

2N3405

GE

2N3415

GE

2N3417

GE

2N3711 · Tl

MPS3711

MO

2N 1185

MO

MA884

MO

MA889

MO

2N 1194

MO

2N1086

GE

2N 1086A GE

2Nl087

GE

2N571

GI

2N572

GI

2N2614

RCA

2N3059

CT

2N3427

MO

MA1703

MO

MA1706

MO

2N2429

AMP

2N2925

GE

Dl6E7

GE

D16E9

GE

ME495

AMP

2N3900A GE

2N3391

GE

2N3391A GE

2N3900

GE

2N4087

GE

2N4087A

GE

ME213A

AMP

2N2953

RCA

2N4017

FA

2N3428

MO

MA1704

MO

MA1707

MO

2N3078

AMP

2N3390

GE

2N4018

FA

2N4019

FA

MAJ702

MO

MAJ705

MO

MA1708

MO

2N3077

AMP

A520/ A521 AMP

Sl5650

FA

2N3395

GE

2N3396

GE

2N3397

GE

2N3398

GE

2N2785

GE

2N997

Tl

2N35

-

Type
npn,PL,si npn,PL,si npn ,PEP,si npn ,PL,si npn,EP,si
npn,DM,si npn,DM,si npn,DM,si npn,DM,si npn,EP,si
npn,DP ,si npn,DP ,si pnp,si pnp ,AJ,ge npn ,PL,si
npn ,PL,si npn,PE,si npn,PE,si npn,PE,si npn,PE ,si
npn ,PE,si npn ,EP,si pnp,AJ,ge pnp ,AJ ,ge pnp,AJ ,ge
pnp,AJ,ge npn ,GR ,ge npn ,GR ,ge npn,GR ,ge pnp,AJ,ge
pnp ,AJ,ge pnp,AJ ,ge pnp,si pnp,AJ ,ge pnp,AJ ,ge
pnp,AJ ,ge pnp,ge npn,PL,si npn,PEP,si npn,PEP ,si
npn,PL,si npn,PL ,si npn ,PL,si npn,PL,si npn,PL,si
npn,PL,si npn,PL,si npn,PL,si pnp,AJ ,ge pnp ,DPE,si
pnp,AJ ,ge pnp ,AJ ,ge pnp,AJ ,ge npn,PL,si npn ,PL,si
pnp,DPE,si pnp ,DPE,si pnp ,AJ ,ge pnp ,AJ ,ge pnp ,AJ ,ge
npn,PL ,si npn,PL,si npn ,DPE,si npn ,PL,si npn ,PL,si
npn,PL,si npn ,PL,si npn,PL ,si npn,si pnp ,AS ,ge

hfe

p c

*hFE

(mW)

150-300

200

*150-300 200

*150-300 200

*150-300 200

*150-300 310

150·450

500

150-450

500

150-450

500

150-450

500

*150-500 310

*150 -600 600

*150-600 600

155

400

160

120

175

500

175

500

*180-540 560

*180-540 560

*180-540 360

*180.540 360

*180-660 250

*180-660 310

190-400

200

190-400

200

190-400

200

190-500

200

195

65

195

65

195

65

200

150

200

120

200

120

200

400

200-500

200

200-500

200

200-500

200

220

500

235-470

200

*235-470 200

*235-470 200

*250

360

250-500

200

*250: 500 200

*250-500 200

*250-500 200

250-500

200

250.500

200

300

360

350

120

*350

600

350-800

200

350-800

200

350-800

200

360

360

*400-800 200

*500

600

*500

600

500

200

500

200

500

200

600

360

600

300

*600

200

800

.200

800

200

800

200

1250

200

2000

1800

*7000

500

-

50

30

MAX. RATINGS

CHARACTERISTICS

T.
J

VCEO

*Vcso Ic

Ica

(oc) mW/ °C (V) (mA)

~1A)

100

2.67 25

100 0.5

100 100

2.67 25 2.67 30

100 100

0u.1s

100

2.67 12

JOO 0.1

135

2.81 25

JOO 0.1

fae *fr (MHz)
-
-
-

Package Outline
(TO-)
98 98 98 98 92

200

'2.5 20

JOO .01

-

18

200

2.5 45

100 .OJ

-

18

200

2.5 20

100 .01

-

18

200

2.5 45

JOO .01

-

18

135

2.81 25

100 0.1

-

92

200

114 *60 9

.005

-

5

200

1.14 *80 9

.005

-

5

200

2.3 *70 100 .005

-

46

100

-

*30 50 5

JO

I

175

-

25

100 0.1

60

-

175

-

25

200 0.01

60

-

150

4.47 25

500 0.1

-

98

150

4.47 50

500 0.1

-

98

150

2.67 25

500 0.1

-

98

150

2.67 50

500 0.1

-

98

125

2.5 30

30 0.1

135

2.81 30

30 0.1

100

2.67 *45 500 10

100

2.67 *60 500 10

100

2.67 *50 500 15

-

t 92

-

5

tl.75 5

tl.75 5

100

2.67 *40 200 15

-

5

85

1.1 9

20 -

8

-

85

1.1 9

20 -

8

-

85

1.1 9

20 -

8

-

85

2.5 *30 300 5

3

-

85

2.0 *30 300 5

3

5

100

-

*40 50 5

10

1

200

2.3 6

JOO .0001

-

46

100

2.67 *45 500 3.0

6.0

5

100

2.67 *25 500 3.0

t3.0

5

100

2.67 *15 500 15

75

3.3 32

JOO -

100

2.67 25

100 0.5

100

2.67 18

100 0.5

100

2.67 25

100 0.5

t3 .0

5

2.3

1

-

98

-

98

-

98

200

2

*40 -

1

-

18

100

2.67 18

100 0.1

-

98

100

2.67 25

100 0.1

-

98

100

2.67 25

100 0.1

-

98

100

2.67 18

100 0.1

-

98

100

2.67 12

100 0.1

100

2.67 12

100 0.1

200

2

45

-

.I

100

-

*30 150 5

200

3.4 *80 200 10

-

98

-

98

100

18

10

1

5.5

-

100

2.67 *45 500 3.0

100

2.67 *25 500 3. 0

100

2.67 *15 500 15

200

2.06 *80 50 .OJ

100

2.67 25

100 0.1

8.0

5

t 5.0

5

t4.0

5

-

18

-

98

200

3.4 *60 200 JO

200

3.4 *45 200 10

100

2.67 *45 500 3.0

100

2.67 *25 500 3.0

100

2.67 *15 500 15

7.0

-

7.0

-

t 7.0

5

t 6.0

5

t s.a

5

200

2.06 *80 50 .01

-

18

200

1.72 80

50 .005

60

5

125

5

25 -

.050

40

-

125

0.375 25

100 0.1

-

t

125

9.375 25

100 .J

-

t

125

0.375 25 100 0.1

-

t

125

0.375 25

JOO O.J

-

t

200

JO

40

500 JO

-

5

175

3.33 40

300 0.01

-

18

-

-

*25 -

-

-

-

Remarks
IEC, GME Epoxy case, GME

Low Level

t'

Low Level

Low Noise, CDC, AMP

Low Noise

Dual Dual

tfT
tfT Epoxy case, heat clip Epoxy case, heat clip Epoxy case Epoxy case, heat clip
t Plastic

tfab tfab
Tl

IND
tfab
tfab
IEC, GME
5 dB(max nf) Economy- Epoxy, NUC, IEC, GME 5 dB(max nf), GME
5 dB(max. nf)
R052A package, Dua I pnp
tfab tfab TR Economy-Epoxy, NUC, IEC, GME
R052A package, Dual pnp R052A package, Dua I pnp tfab t fab tfab
TR 6 lead diff amp ROllO package Economy- Epoxy, GME, IEC Economy- Epoxy, GME, IEC Economy - Epoxy, GME , IEC Economy- Epoxy, GME, IEC SPR (Darlington) ,FA, SPR SY , GI

(see pages 4-9 for explanation of company abbreviations.)

ELECTRONIC DESIGN

Why ITT VVet tantalum
capacitors can't leak

Every ITT Red Cap© wet tantalum capacitor gets a "total stress" seal that, unlike the ordinary single-crimp seal, positively prevents electrolyte leakage. To accomplish this, ITT inserts a teflon end seal, then spins down the open end of the can until end seal, anode and insulating washer are under a predetermined compressive force.
Seal integrity is further insured by the addition of an epoxy end fill. Since the epoxy's expansion coefficient is less than that of the can , temperature cycling cannot relax the spun seal.
If you 're tired of electrolyte leaks and the problems that go with them, here's an easy solution. Order the ones that can't leak - the Red Caps © - from your ITT Capacitor distributor or from ITT Semiconductors, a division of International Telephone and Telegraph Corporation , 3301 Electronics Way, West Palm Beach, Florida.

ITT

SEMICONDUCTORS

FACTORIES IN PALO ALTO, CALIFORNIA! LAWRENCE. MASSACHUSETTS: WEST PALM BEACK. FLO R I DA~ HARLOW AN O FOOTSCRAY. ENGLAND; FREIBURG ANO NURENBERG. GERMANY.

May 17, 1966

ON READER-SERVICE CARD CIRCLE 11

Audio (continued)

Cross Index Type

hfe

Key

Ha.

Mfr.

Type

*hFE

2N331 2N 1392 2N 1393
2N4020

pnp,AJ,ge

-

GI

pnp,ge

-

GI

pnp,ge

-

FA

pnp,DPE,si

-

2N4021

FA

pnp,DPE,si

-

A 50 2N4022 2N4023 2N4024

FA

pnp,DPE,si

-

FA

pnp,DPE,si

-

FA

pnp,DPE,si

-

2N4025

FA

pnp,DPE,si

-

FT4020

FA

pnp,DPE,si

-

FT4021

FA

pnp,DPE,si

-

FT4022 FT4023 FT4024 FT4025 A 51

FA

pnp, DPE,si

-

FA

pnp,DPE,si

-

FA

pnp,DPE,si

-

FA

pnp, DPE,si

-

ME209

AMP npn, PE, si

-

ME214

AMP npn,PE,si

-

SP10801

FA

npn,DP,si

-

SP10810

FA

pnp,DPE,si

-

SP10811

FA

pnp,DPE,si

-

MAX. RATINGS

CHARACTERISTICS

p c (mW)

T.
J

VCEO

*Vcso Ic

I ca

(oc) mW/ °C (V) (mA)

(/1A)

fae
*fr (MHz)

Package Outline (TO-)

Remarks

200

71

-

*30

-

16

50

-

0.8

*20

-

8.0

50

-

0.8

*20

-

8.0

600

200

2.3

*45

200 10

600

200

2.3

*45

200 10

-

5

MO, GI, IND

-

-

-

-

160

-

R052A package, Dua I pnp

160

-

R052A package, Dua I pnp

600

200

2.3

15

200 10

600

200

2.3

45

200 10

600

200

2.3

45

200 10

600

200

2.3

45

200 10

500

200

2.8

45

200 10

160

-

R052A package, Dual pnp

160

-

R052A package, Dual pnp

160

-

R052A package, Dua I pnp

160

-

R052A package, Dual pnp

0.7

-

Dual pnp

500

200

2.8

60

200 10

500

200

2.8

60

200 10

500

200

2.8 45

200 10

500

200

2.8

60

200 10

500

200

2.8

60

200 10

0.55

-

0.7

-

0.7

-

0.55

-

0.7

-

Dual pnp Dual pnp Dual pnp Dual pnp Dual pnp

300

175

2

*10 -

.002

-

18

Chopper, Voff=250nV

300

175

2

*45 -

.002

-

18

Chopper, Voff=500nV

350

200

2

*45 -

-

-

89

350

200

2

*20 -

-

-

89

350

200

2

*20 -

-

100

89

(see pages 4-9 for explanation of company abbreviations.)

Late-arrivals ...

The following bipolar transistor families, manufactured by General Instrument, are epoxy encapsulated units (T0-18 cans) similar or equivalent in characteristics to their metal-can counterparts (for detailed information on device properties use the literature offering form and reader-service card, p. 4):

Audio and general purpose
2N2711 · 2N2716 2N2721 - 2N2726

2N3390 - 2N3398 2N3414 - 2N3416

High-frequency
2N3563 - 2N3566 2N3605 - 2N3607 2N3638 - 2N3645

2N3702 · 2N3711 2N3900 . 2N3905 2N3983 - 2N3985

High-level switching
2N4140 - 2N4143 (similar to 2N2221, 2N2222, 2N2906, 2N2907) 2N4227 - 2N4228 (direct equivalents of metal-can types)

32

ELECTRONIC DESIGN

NEW contact/ess meter relays (4 ¥2 ") NEW miniature edgewise meters (1Y2")

Utter reliability ... utter simplicity. Completely fail-safe circuitry insures 1003 reliability. No limitation on pointer travel due to mechanical contacts. Model 3324XA meter relays are CONTACTLESS. An infinite life lamp and photo-conductors do the sensing. Solid state switching circuit and relay (IO amp, DPDT, 115 VAC) are contained internally on single control point units. Double control point models also available. Control point indication is within 2% of actual switching. Available THROUGH DISTRIBUTORS in ranges shown.

RANGE

IApprox. Single Control Ohms at. No. Price

DC Microammeters

0-50 0-100

131030000

0-200

570

0-500

220

16451 16452 16453 16454

99.00 96.15 96.15 96.15

DC Milliammeter

0-1

l 80

DC Millivoltmeter

0-50

I 10

16455 16460

95.10 63.60

Double Control Cat. No. Price

16470 16471 16472 16473
16474
16480

136.35 133.65 133.50 133.50
132.45
137.25

Takes only half the space of a 21h" Edgewise meter with little sacrifice in scale length. Movement is self-shielded. DC accuracy is ± 23 (F.S.); AC
(rectifier type), ± 33 (F.S.) at 25°, 60 cycle sine
wave. Dustproof case. Meter comes complete with bezel and mounting hardware. 20 Ranges are STOCKED (see sampling below). Contact your ELECTRONIC DISTRIBUTOR about Model 1521.

RANGE
DC Voltometers 0-150 DC Milliammeters 0-100 DC Millivoltmeters 0-50 DC Microammeters 0 -25 AC Voltmeters 0·150

Approx. Ohms
1000 o/v 1.35
10 3150 1000 o/v

Cat. No. 10358 6817 0713 4552 10415

Price
$15.45 15.90 16.20 23.40 20.10

For Complete Details, Request Bulletin 2073 and Meter Relay Reprint Article.

SIMPSON ELECTRIC COMPANY

5202 W. Kinzie Street, Chicago, Ill. 60644 ·Phone: 312-379-1121

Export Dept.: 400 W. Madison Street, Chicago, Ill. 60606 ·Cable, Amergaco

In Canada: Bach-Simpson Ltd., London, Ontario

In India:

Ruttonsha-Simpson Private Ltd., International House, Bombay-Agra Road, Vikhroli, Bombay

May 17, 1966.

ON READER-SERVICE CARD CIRCLE 12

High-Frequency
lndudes types ranging up to and above the vhf rarige. Listed in Order Of increasing fae Or fT·

Cross lnde,x Key HF l HF 2
HF 3
HF 4
HF 5
HF S
HF 7

Type Ho.
2N2709 2N444 2N444A 2N3296 2N3297
2N94 2N233 2N233A 2N445 2N445A
2N515 2N51S 2N3295 2Nl391 2N2946
SFT337 2N212 2N517 2Nl058 2Nl39
2N218 2N94A 2N211 2N446 2N44SA
2Nl090 2N2945 FK3962 FV39S2 2N227S
2N2277 3N90 3N91 3N92 3N93
3N94 3N95 3Nll2 3Nl13 2N409
2N410 FK39S4 FV3964 SA-313 SA-314
SA-316 SA-413 SA-414 SA41S 2N2378
2N3318 2N471A 2N472A 2N473 2N474
2N474A 2N475 2N475A 2N495 2N581
2N 1054 2Nlll8 2Nlll8A 2N2377 SA-312

34

1ae

*fT

p c

Mir.

Type

(MHz) (mW)

RA pnp,si
GI npn,AJ,ge GI npn,AJ,ge MO npn,E,si MO npn, E,si

0.05 250

1

100

l

150

·1

6W

·1

25W

SY npn,AL,ge

2

150

SY npn,AL,ge

2

150

SY npn,AL,ge

2

150

GI npn,AJ,ge

2

100

GI npn,AJ,ge

2.

150

SY npn,AL,ge

2

150

SY npn,AL,ge

2

150

MO npn,E,si

2

2w

GI npn,AJ,ge

3

150

CT pnp, PE, si

*3

400

NUC pnp,ge

3

150

SY npn,AL,ge

4

150

SY npn,AL,ge

4

150

SY npn,Al,ge

4

50

RCA pnp,AJ,ge

4.7

80

RCA pnp,AJ,ge SY npn,AL,ge SY npn,AL,ge GI npn,AJ,ge GI npn,AJ,ge

4.7 80

5

150

5

150

5

100

5

150

RCA npn,AJ,ge SPR pnp, PE, si FA pnp,DP,si
FA pnp, DP,si SPR pnp, AT, si

5

120

*5

400

5.5 175

5.5 175

*6

150

SPR pnp, SP,s i

*6

150

SPR pnp,PE,si

*6

300

SPR pnp,PE,si

*6

300

SPR pnp,PE,si

s

300

SPR pnp,PE,si

·s

300

SPR pnp,PE,si SPR pnp,PE,~i SPR pnp,PE, Si SPR pnp,PE, si RCA pnp,AJ,ge

·s

300

*6

300

*6

200

*6

200

6.7 80

RCA pnp,AJ,ge FA pnp,DP,si
FA pnp,DP,si
SPR pnp,SP,si SP-R pnp,SP,si

6.7 80

7

175

7

175

*7

150

*7

150

SPR pnp,SP,si SPR pnp,SP,si SPR pnp,SP,si SPR pnp,SP,si SPR pnp,SAT,si

*7

150

*7

150

*7

150

*7

150

*7.2 150

SPR pnp,SPAT ,si *7.6 150

TR npn,PL,si

8

200

TR npn,PL,si

8

200

TR npn,PL,si

8

200

TR npn,PL,si

8

200

TR npn,PL,si

8

200

TR npn,PL,si

8

200

TR npn,PL,si

8

200

SPR pnp,SPAT,si *8

150

RCA pnp,AJ,ge

8

150

TR npn,PL,si

8

soo

*SPR pnp,SA T,si

8

150

*SPR pnp,SAT,si
SPR PNP,SAT,si SPR pnp,SP,si

·8·aa

150 150 150

MAX. RA TINGS

T.

VCEO

J

*VCBO IC

(oC) mW / °C (V) (mA)

160 1.85 35

50

85 1.67 *15 -

100 2

·35 -

175 40

·so 700

175 1S7 ·so l.5a

100 -

·20 100

85 -

·10 100

85 -

·10 100

85 l.S7 *15 -

100 2.0 *25 -

85 -

*18 100

85 -

*18 100

175 13.3 ·so 250

100 2

*25 -

200 2. 4 *40 100

80 85 85 -
75 -
70 -

*15 100
*18 100
*18 100 *18 50 ·1s 15

70 -

*16 15

100 -

·20 100

85 -

*18 100

85 1.67 *15 -

100 2

*25 -

85 -

·25 400

200 2. 4 *25 100

200 2

so

50

200 2

so

50

140 1.3 *15 50

140 1.3 *15 50

200 1.7

30

20

200 1.7

30

20

200 1.7

30

20

200 1.7

50

20

200 1.7

50

20

200 1.7

50

20

200 1.1 *50 20

200 1.1 ·so 20

71 -

*13 15

71 -

*13 15

200 2

45

50

200 2

45

50

140 1.3 20

50

140 1.3 15

50

140 1.3

10

50

140 L3 20

50

140 1.3

15

50

140 1.3

10

50

140 1.3 ·10 50

140 L3

15

50

175 1.2

30

25

175 1.2

45

25

175 1.2

15

25

175 1.2

30

25

175 1.2

30

25

175 1.2 45

25

175 1.2 45

25

140 1.3

25

50

85 -

~18

100

175 23 140 1.3
140 1.3
140 1.3 140 1.3

*125 750

25

50

25

50

*25 50

10

50

CHARACTERISTICS

1co

hfe *hFE

*1CEO Coe
t 1cEx *Cob
(µA) (pf)

Packoge Outline
(TO-)

Remarks

·10

1

·110 5

10

6

*16 5

Tl, ETC

15

4

*14 5

Tl, ETC

*5-50

0.1

·20 -

Special ceramic stud-mount

*2.5-35

1.0

·so 3

*10-80

30

10

-

·10

-

20

s

35

4

9

22

ETC

7

22

ETC

7

22

ETC

*lS 5

Tl, ETC

*14 5

Tl

*10-50

50

8

22

*15-75

50

8

22

*20-60

0.1

*8

5

*40-lSO 4

·20 5

*30-150

0. 0005 *10

46

SPR

so

2.5

-

l

*10-30

30

7

22

*20-100 50

8

22

*10-23

50

7

22

48

s

-

40

48

6

*7-21

30

*20-100 30

30

s.o

so

4.0

-

l

9

22

7

22

*16 5

Tl

*14 5

Tl

*30 *40-250 *300 *300
*15

8

*25 5

GI

0.0002 *10
- *6 - *6

46
-
51

Hermet package

0. 003 *6. 0 *18 Matched Pair 2N227

*15

0. 003 ·s.o 18 Matched Pair 2N227S

-

0.01

8

18 Duet, Voff <50µ V

-

0.01 8

18 Duet, Voff <100µ V

-

0.01 8

18 Duet, Voff <20(J.i V

-

0.01 8

18 Duet, Voff < 50µ V

-

0.01 8

18 Duet, Voff < 100µ V

-

0.01 8

18 Duet, Voff <200µ V

1.5

. 010 *10 90 Dual

1.5

.010 *10 90 Dual

48

10

-

40

48

10

-

2

LAN

*500

-

·s

-

Hermet package

*500

-

·s

51

*S

0.01 s

5

Symmetrical

*8

0.02 s

5

Symmetrical

*10

0.003 s

5

Symmetrical

·s

0.01 s

18 Symmetrical

*8

0.02 s

18 Symmetrical

*10

0.003 s

18 Symmetrical

*25

0.001 ·s

18

-

0.001 *9

18 Chopper

10-25

.5

*8

5

10-25

.5

*8

5

20-50

.5

*8

5

20-50

.5

*8

5

20-50

.5

*8

5

20-50

.5

*8

5

20-50

.5

*8

5

15-30

0.1

·12 l

30

3

-

5

GI, Tl , LAN, IND

·20

5

*120 5

SSP

35

0.001 *6

5

*PH orig Reg, CT

25

0.001 *S

5

*PH orig Reg, CT

30

0.002 ·s

18

*10

0.01 6

5

Symmetrical

(see pages 4-9 for explanation of company abbreviations.)

ELECTRONIC DESIGN

High-Frequency (continued)

Cross Index Key
HF 8

Type Ho.
SA-315 SA-412 SA-415 2N447 2N447A
2N447B 2Nl40 2N219 2N411 2N541

Mfr.

Type

SPR pnp,SP,si SPR pnp,SP,si SPR pnp,SP,si GI npn,AJ,ge GI npn,AJ,ge

GI npn,AJ,ge RCA pnp,AJ,ge RCA pnp,AJ,ge
RCA pnp,AJ,ge TR npn,PL,si

fae
*fr
(MHz)
*8 *8 *8 9 9
9 10 10 10 10

2N542 2N542A 2N543 2N602 2Nl206 HF 9
2N 1207 2N 1907 2N 1908 2Nl974 2N2944

TR npn,PL,si

10

TR npn,PL,si

10

TR npn,PL,si

10

GI pnp, DR,ge

*10

TR npn,PL,si

10

TR npn,PL,si

10

Tl pnp,ge

*10

Tl pnp,ge

*10

FA npn,DP,si

*10

CT pnp, PE, si

*10

HF 10

2N3317 2N3319 SA-310 SA·311 SA-410
SA·411 2N476 2N477 3Nl14 3Nll5

SPR pnp,SPAl,si *10

SPR pnp,SP,si

*10

SPR pnp,SP ,si

*10

SPR pnp,SP,si

*10

SPR pnp,SP,si

*10

SPR pnp,SP,si

*10

TR npn,PL,si

12

TR npn,PL,si

12

SPR pnp,PE,si

*12

SPR pnp,PE,si

*12

3Nl16 3Nl17
3Nl18 3Nl19
2N582

SPR pnp,.PE,si

*12

SPR pnp,PE,si

*12

SPR pnp,PE,si

*12

SPR pnp,PE,si

*12

pnp,AJ,ge

18

HF 11

2Nl429

pnp,SAT,si

18

2N478

TR npn,PL,si

20

2N479

TR npn,PL,si

20

2N479A 2N480

'

TR TR

npn,PL,si npn,PL,si

20 20

HF 12

2N496 2N1065 2N2432 2N4138 S15649
2Nl411 OC45 2N274 2N344 2N345

·sPR pnp,SPAT,si *20

GI pnp,DR,ge

*20

Tl npn,PE,si

*20

Tl npn,PE,si

*20

FA npn,DP,si

*211

SPR pnp, MA, ge *25 AMP pnp, AJ, ge *25 RCA pnp, DR, ge 30 *SPR pnp,SBT,ge 30 *SPR pnp,SBT,ge 30

HF 13

2N371 2N372 2N603 2N754 2N755
2N840 2N842 2N1224 2N 1226 2N 1395

RCA pnp,DR,ge

30

RCA pnpDR,ge

30

GI pnp, DR,ge

*30

TR npn,PLE,si 30

TR npn,PLE,si 30

TR npn,PLE,si 30

TR npn,PLE,si 30

RCA pnp,DR,ge

30

RCA pnp,DR,ge

30

RCA pnp,DR,ge

30

HF 14

2N 1983 2N 1984 2N 1985 2N2225 2N37 42
2N37 43 TN-55 TN-56 TN-57 TN-58

FA npn, DD,si

*30

FA npn, DD,si

*30

FA npn,DP,si

*30

KSC pnp,ge

30

MO npn,AE,si

*30

MO pnp,AE,si

*30

SPR npn,PE,si

30

SPR npn,PE,si

30

SPR npn,PE,si

30

SPR npn, PE,si

30

MAX. RA TINGS

p c

T
j

VCEO *VCBO 'c

(mW) (oC) mW / °C (V) (mA)

150

140 1.3 i2

50

150

140 1.3 10

50

150

140 1.3 12

50

100

85 1.67 *15 -

15

100 2

*25 -

150

100 2

*25 -

80

70 -

*16 15

80

70 -

*16 15

80

71 -

*13 15

200

175 1.2 15

25

200

175 1.2 30

25

200

175 1.2 30

25

200

175 1.2 50

25

120

85 2.0 *30 -

3000

175 25

60

150

3000

175 25

125 150

60000 100 2000 *100 20

60,000 100 2000 *130 20

3w

200 17.2 60

-

400

200 2. 4 *15 100

150

140 1.3 30

50

150

140 1.3 30

50

150

140 1.3 10

50

150

140 1.3 6

50

150

140 1.3 10

50

CHARACTERISTICS

'co

hie *hFE

*1cEO t 1cEx

Coe *C ob

(µA) (pF)

*10

0.01 6

*30

0.01 6

*10

0.01 6

50

6.

*16

85

4

*14

150

4

*14

75

6

-

75

6

-

75

10

-

80-200

.5

*20

80-200

.5

*20

80·200

.5

*8

80-200

.5

*20

*20·80

8

*7

*20-80

1

50

*20-80 *20 *20 70 *80-450

1

*50

500

-

500

-

0.005 *13

0. 0001 *10

-

0.001 *9

-

0.001 *9

*30

0.01 6

*15

0.01 6

*30

0.01 6

Pockoge Outline
(TQ.)
5 18 18 5 5
5 40 1 40 5
5 5 5 5 5
5 3 3 5 46
18 Hl· 5 5 18

Remarks Symmetrical Symmetrical Symmetrical
GE GE GE GE
TRWS, CDC, TR, AMP SPR Chopper Chopper Symmetrical Symmetrical Symmetrical

150

140 1.3 10

50

*30

0.01 6

18 Symmetrical

200

175 1.2 15

25

30-60

.5

*10 5

200

175 1.2 30

25

30-60

.5

*10 5

300

200 1.7 *30 20

3

.010 *10 18 Dual

300

200 1.7 *30 20

3

. 010 *10 18 Dual

300

200 1.7 *30 20

3

300

200 1.7 *50 20

3

300

200 1.7 *50 20

3

300

200 1.7 *50 20

3

150

85 -

*25 100

60

.010 *10 18 Dual

.010 *10 18 Dual

.010 *10 18 Dual

.010 *10 18 Dual

2

-

5

GI, Tl. RCA, LAN, IND

100

140 0.86 6

50

45

0.001 *7

5

SPR, CT

200

175 1.2

15

25

40-100

.5

*8

5

GE

200

175 1.2 30

25

40-100

.5

*8

5

GE

200

175 1.2 30

25

40-100

.5

*8

5

GE

200

175 1.2 45

25

40-100

.5

*8

5

GE

150

140 1.3 10

50

*25

0.1

*12 1

·PH orig. Reg.

120

85 2.0 *40 -

*20-80

8

*7

5

300

175 2

30

100

50

0.01 ·12 18

300

175 2

30

100

50

0.01 *12 46

200

125 5

25

-

200-1000 3

4

-

ROl 10 package

25

85 -

*5

50

*75

83

75 -

*15 5

75

120

100 1.6 -

-10 60

20

55 1.33 *5

5

22

20

55 1.33 *5

5

35

0.3

*3

24 PH, GI

0. 5 -

-

4

*2

44 Vcev=-40

0.7

*3

24 *PH orig Reg

0.7

*3

24 *PH orig Reg

80

71 -

*24 10

80

10

-

7

80

71 -

*24 10

80

10

-

7

120

85 2

*30 -

*30· 100 8

*5

5

Tl

300

175 3

*60 50

*15

1

*10 18

300

175 3

*100 50

*15

1

*10 18

300

175 3

45

50

*30·100 1

*15 18 CDC

300

175 2

45

50

*20-55

1

10

18

120

85 -

*40 -

60

12

-

33 AMP

120

85 -

*60 -

60

120

100 -

*40 10

90

12

-

33 AMP

4

*2

33 SY, AMP

I

2000

150 16

25

-

100

1

*35 5

TRWS, CDC I AL

2000

150 16

25

-

80

1

*35 5

TRWS, CDC I AL, AMP

2000

150 0.016 25

-

60

200

100 -

*15 400

*60

1

*35 5

TRWS, CDC I AL, AMP

25

*14 5

5000

200 28.6 300 50

*20-200 0.2

*6

5

5000

200 28.6 300 50

*25-250 0.3

*15 5

800

200 4.57 30

800

100

. 010 8

5

500

200 2.86 30

800

100

.010 8

18

800

200 4.57 *40 800

80

0.010 *8

5

500

200 2.86 *40 800

80

0.010 *8

18

(see pages 4-9 for explanation of company abbreviations.)

May 17, 1966

35

WHAT GIVES YOU AN UNNEUTRALIZED, 3-STAGE TV-IF WITH 90db STABLE GAIN, HAS LOW FEEDBACK CAPACITANCE, CUTS COMPONENT COSTS, MINIMIZES ALIGNMENT TIME AND HAS NEVER BEEN USED IN A SINGLE TV SET?

36

ELECTRONIC DESIGN

Integrated-Shield Transistors. How come they've never been used before? Simple. They've never been available before; they're brand new from Amperex.
Until now, the big problem in (l.esigning transistorized TV-IF's has been the transistor feedback capacitance. Amperex's breakthrough to integrated shielding has now produced the types A467 and A473 with feedback capacitance so low that the need for neutralizing the circuit is completely eliminated.
In the Amperex Integrated-Shielding process, we diffuse a special shield between the collector and the base lead
May 17, 1966

"tab" to clamp the base at the emitter RF potential. In common emitter circuits of the type used in TV-IF amplifiers the net effect is the elimination of the major source of feedback capacitance: the capacity between the collector and the base-lead "tab." Thus the Cre for the type A467 is a low 150 mpf and only 220 mpf for the type A473.
Now you can build a three-stage, unneutralized video IF amplifier, using the A467 and two A473's to produce an overall minimum stable gain of 90db at 44mHz. The gain control range of the type A467 stag-e is 55db minimum ; in
ON READER-SERVICE CARD CIRCLE 13

the output stage the A473 will provide swings of 7.7 volts undistorted into 2700 ohms.
For complete data and application information, write: Amperex Electronic Corporation, Semiconductor and Special Purpose Tube Division, Slatersville,
Rhode Island, 02876.
45Mc 10.7Mc AGC Useable Useable Cre Range Gain Gain

A467 330 Mc 150 mpf 55 db 33 db

A473 550 Mc 230 mpf

34 db 36 db

Ampere»

37

High-Frequency (continued)

. Cross Index Key HF 15
HF 16
HF 17
HF 18
HF 19
HF 20
HF 21

Type No.
2Nl524 2N 1525 2N 1526 2N1527 2Nl 417
2Nl418 2N794 2N795 2N393 2N841
2N843 2N 1122 2N l122A 2Nl3aO 2N 1409
2Nl 410 2N1638 2N3565 2N3566 2N3712
PADT5a 2N128 2Nl631 2Nl632 2N 1637
2N 1639 2N25a9 2N2510 2N2511 OC44
2N5a4 2N6a4 2N6a5 2N606 2N607
2N796 2N844 2N845 2Nl409 2Nl4la
2N 1427 2Nl683 2N 1752 2Nl785 2Nl786
2N 1787 2Nl864 ZN1893 2N 1978 2Nl986
2Nl987 2Nl988 2N1989 2N2427 2N190a
2Nl903 2N2223 2N2223A Tl538 2N346
2N370 2N698 2N717
2N719
2N719A 2N720A
2N912 2N1301

1ae *fr

Mfr.

Type

(MHz)

RCA pnp,DR,ge

33

RCA pnp,DR,ge

33

RCA pnp,DR,ge

33

RCA pnp,DR,ge

33

TR npn,si

*34

TR npn,si

*34

RCA pnp,ge

*35

RCA pnp,ge

*35

*SPR pnp,MA,ge

4a

TR npn,PE,si

4a

TR npn ,PE,si

4a

*SPR pnp,MA,ge

*40

*SPR pnp,MA,ge

*4a

SPR pnp,ge

*4a

RA npn,si

*4a

RA npn,si

*4a

RCA pnp,DR,ge

4a

FA npn ,PL,si

*4a

FA npn,PL ,si

·*40

Tl npn ,PL,si

*40

AMP pnp,PADT,ge *4a

*SPR pnp,SBT,ge 45

RCA pnp,DR,ge

45

RCA pnp,DR,ge

45

RCA pnp,DR,ge

45

RCA pnp,DR,ge

45

AL DP

45

AL DP

45

AL DP

45

AMP pnp,PADT,ge *45

*SPR pnp,MD,ge

5a

GI pnp, DR,ge

*50

GI pnp,DR,ge

*Sa

GI pnp, DR,ge

·sa

GI pnp,DR,ge

*5a

RCA pnp,ge

*5a

TR npn,PLE,si 50

TR npn,PLE,si 50

TRWS npn,PL,si

*50

TRWS npn,PL,si

*50

*SPR pnp,MA,ge

*5a

RCA pnp,ge

·so

*SPR pnp,MD,ge

50

*SPR pnp,MD,ge

50

*SPR pnp,MD,ge

50

*SPR pnp,MD,ge

50

*SPR pnp,MD,ge

50

FA npn,si

5a

FA npn,DP,si

*50

FA npn, DD,si

*50

FA npn,DD,si

*50

FA npn,DD,si

*50

FA npn,DD,si

*50

TR npn,PE,si

50

TRWS npn,PL,si

"'> 50

TRWS npn,PL,si

"'>Sa

MO npn,AE,si

*50

MO npn,AE,si

·5a

Tl pnp,PE

*50

SPR pnp,SBT,ge 60

RCA pnp,DR,ge

60

FA npn,DP,si

*60

FA npn , DD, si

*60

FA npn, DD, si

*60

FA npn,DP,si

*60

FA npn,DP,si

*60

FA npn,DP,si

*60

SPR pnp,ge

*60

MAX. RA TINGS

p c

T. J

VCEO *VCBO 'c

(mW) (oC) mW / °C (V) (mA)

CHARACTERISTICS

lea

hie *hFE

*1cEO Coe t ic EX *Cob
(µA) (pf)

Package Outline
{TO-)

Remarks

8a

71 -

*24 la

6a

8a

71 -

*24 10

60

8a

71 -

*24 la

13a

80

85 -

*24 la

13a

15a

lSa 1.25 15

-

6a

16

-

1

16

-

4a

16

-

1

16

*2

4a

a.a5 *1.5 5

15a

15a 1.25 30

-

6a

. a.as *1.5 5

l'--

15a

85 -

*13 10a

*5a

13

*12 18 SPR

150

85 -

*13 laO

*75

13

12

18 SPR

25

laa a.63 *6

5a

155

1.5

*3.5 24

*PH orig ~eg , GI

3aa

175 3

45

5a

*60-4aa 1

*15 18 TRWS, CDC

3aa

175 2

45

5a

*45-15a 1

*la 18

25

85 a.63 *12 50

35

5

6

24 *PH orig Reg

25 15a

- 85 a.63 *15

85

*13

5a 10a

35 3a

5

6

24 *PH orig Reg

3

-

5

55a

15a 4.5 *30 5aa

*3a

la

35

5

GI

55a

15a 4.5

·3a 5aa

*30

la

35

5

GI

8a

85 -

*34 la

-

-

-

1

50a

125 5.0 25

-

*15a-6oa o.a5 *4.a -

CDC, IEC, GME

800

125 8.a 30

-

*400

a.a5 25

-

CDC, IEC , GME

0aa

175 5.33 15a 2aa

*30-15a a.1

9

5

Metal header, MO

60aa

75 -

·7a 1aa 4a

25

85 a.82 *10 5

4a

8a

85 -

*34 10

8a

8a

85 -

*34 la

8a

80

85 -

*34 10

48

-

-

3

a.6

*2.5 24 *PH orig Reg

16

-

4a

16

-

1

-

-

1

8a

85 -

*34 la

-

l.2W

2aa 6.9

8a

-

4a

l.2W

2aa 6.9 65

-

150

l.2W

2aa 6.9

5a

-

24a

83

75 -

*15 5

10a

-

-

.aa5 *6

.aa5 *6

.aa5 *6

a.5

-

1

18 GI. TR, AMP, UC

18 GI , TR, AMP, UC

18 GI, TR, AMP , UC

-

Special case

3a

85 0.75 *35 5a

16

10

*2.5 1

*PH orig Reg, GI

lZO

85 2

·3a -

*4a-14a 8

*5

5

Tl

12a

85 2

*15 -

4a

10

*7

5

12a

85 2

*15 -

6a

la

*7

5

12a

85 2

*15 -

8a

la

*7

5

15a

85 -

*13 laa

*85

13

*12 18 SPR

3aa

175 3

*6a 5a

*40· 12a 1

*la 18

3aa

175 3

*lOa sa

·4a.12a 1

10

18

6aa

175 4 ·,·3a 5aa

*15·45

la

35

5

GI

6aa

175 4

*45 soa

*30·9a

la

24

5

GI

25

85 -

*6

sa

12a

1sa

85 -

12

10a

·sa

6a

1aa 0.8 *12 sa

2sa

45

85 a.75 *10 50

15a

45

85 a.75 *10 5a

250

a.s

*3.5 24 *PH orig Reg, GI

3

*12 5

SPR

a.8

*1.0 9

*PH orig Reg

2

*1.5 9

*PH orig Reg

2

*1.7 9

*PH orig Reg

45

85 a.75 *15 sa

12a

1.5

*1.5 9

*PH orig Reg

60

100 0.8 *20 50

6a

1.5

*1.6 9

*PH orig Reg

3

2aa a.017 80 a.5

*4a-12a a.al

*15 5

RCA, TR, NA, TRWS

3000

2ao 172 *6a -

*3a

1

*70 -

20ao

15a 16

25

-

15a

1

*25 5

TRWS, CDC. GI, AL. AMP

2aao

1sa 16

25

-

sa

2aoa

150 16

45

-

*75

2w

15a 16

45

-

*4a

soa

175 2.86 4a

50

4a

125000 15a 10ao *140 1oaaa 5.a

1

*25 5

1

*17 . 5

1

*17 5

.5

*8

18

10oao ·10ac 38

TRWS. CDC. GI, AL. AMP TRWS, CDC, GI, AL TRWS, CDC, GI , AL
Single Ended

125aoo 15a 10ao *140 10000 5.a

3aao

2ac 17.2 60

500

*25-l 5a

30ao

20( 17.2 60

500

*25-150

200

125 2

32

5a

25

20

55 1.33 *5

5

35

8a

71 -

*24 10

10a

3.aw

2oa 17.2 60

-

*40

1.5W

175 1a

*60 -

*4a

l.5W

175 10

*120 -

· 4a

10aao .al .al a.1 0.7
10
a.aao~
a. 01
a. al

*lOaC 39

*15 77

*15 .77

*0.5 92

*3

24

-

7

*13 5

*17 18

*12 18

DoubIe Ended Diff. Amp. Diff. Amp .
*PH orig Reg
TRWS, TR, STC, AMP, CDC TRWS, CDC, TR, GI, AMP, NA TRWS, CDC, TR, GI, AMP

1.8W

2ao 10.3 *120 -

*40

1.8W

2ao 10.3 *120 -

*8a

180a

2ao 10.3 60

-

45

1sa

85 -

*13 10a

3a

a.a05 *12 18 TRWS, C.OC. AMP, AL, GI. TR

a.aas *12 18 TRWS, CDC, G_l,AMP, AL,

TR, RCA

a.oa5 *13 18 TRWS, CDC, AMP I AL

3

-5

(see pages 4-9 for explanation of company abbreviations.)

38

ELECTRONIC DESIGN

High-Frequency rcontinued)

Cross Index Key HF ZZ
HF Z3
HF 24
HF 25
HF 26
HF 27

Type No.
2Nl972 2Nl975 ZNZ060 2NZ060A ZNZ595
ZNZ598 ZNZ601 ZNZ980 ZNZ981 ZN3567
ZN3568 ZN3569 MMZ483 MMZ484 ZNZ483
ZN911 ZN 1335 ZN 1336 ZN 1337 ZN 1338
2N 1339 2Nl340 2Nl341 2Nl342 2Nl505
2N2092 2N2093 2N2914 2N2915 2N2916
2N2917 2N2918 2N2919 2N2920 2N2972
2N2973 2N2974 2N2975 2N2976 2N2977
2N2978 2N2979 2N2982 2N3056 2N3019
2N3020 2N3057 2N307 5 2N990 2N993
2N2089 2N2590 2N2671 2N2672 2N696
2N699

2N718

t--2N718 A

HF 28

2N720 2N870 2N910
2Nl252 2Nl6 13

m 74B 2N 1749

Mfr.

Type

FA npn, DD,si FA npn, DP,si MO npn,AE,si MO npn,AE,si SSD pnp,PL

1ae ·

*fl

p c

(MHz) (mW)

*6·o 2.0 *60 3W *60 3000 *60 3000 *60 400

SSD pnp,PL SSD pnp,PL FA npn,DP,si FA npn, DP,si
FA npn,PE,si

*60 400 *60 400 *60 750 *60 750
*60 800

FA npn,PE,si FA npn,PE,si
MO npn,EP,si MO npn,EP ;si FA npn,DP,si

*60 800 *60 800 *60 lZOO *60 lZOO *69 l.2W

FA npn, DP,si TRWS npn,PL,si TRWS npn,PL,si TRWS npn,PL,si TRWS npn,PL,si

*70 1800 *70 800 *70 800 *70 800 *70 800

TRWS TRWS TRWS
TRWS TRWS

npn,PL,si npn,PL,si npn,PL,si npn,PL,si
npn,PL,si

*70 800 *70 800 *70 800 *70 800 4>70 3W

AMP pnp,PADT,ge *70 83

AMP pnp,PADT,ge *70 83

FA npn,DP ,si

*70 l.5W

FA npn,DP,si

*70 l.SW

FA npn,DP ,si

*70 l.5W

FA npn,DP,si FA npn,DP,si FA npn,DP,si FA npn,DP ,si FA npn,DP,si

*70 l.5W *70 l.5W *70 l.5W *70 l.5W *70 750

FA npn,DP,si FA npn,DP,si FA npn,DP,si FA npn,DP,si FA npn,DP,si

*70 750 *70 750 *70 750 *70 750 *70 750

FA ripn,DP,si FA npn, DP,si FA 'tlpn, OP,si RA npn,PL,EP RA npn,PL,EP

*70 450 *70 750 *70 750 *70 400
*70 800

RA npn,PL,EP *70 800

RA npn,PL,EP *70 400

AMP pnp,PADT,ge 70

140

AMP pnp,PADT,ge 75

67

AMP pnp,PADT,ge *75 67

AMP pnp,PADT,ge 75

100

SSD pnp,PL

*75 400

AMP pnp,AD,ge

75

100

AMP pnp,AD,ge

75

100

FA npn, DD,si

*80 2.0W

FA npn,DD,si FA npn, DD,si

*80 2.0W *80 l.5W

FA npn,DP,si
FA prp,00,si FA npn , DP, si FA npn,DP,si
FA npn, 00,si FA npn,DP,si
*SPR pnp,MO,ge *SPR pnp,MD,ge

*80 LBW
*80 l.5W *80 l.BW *80 1800
*80 2.0W *80 3W
*80 60 *80 75

MAX. RA TINGS

T.

VCEO

J

*VCBO IC

(oC) mW / °C (V) (mA)

175 10

*60 -

zoo 17.Z 60

-

zoo 17.Z 60

500

zoo 17.Z 60

500

zoo Z.3 60

50

CHARACTERISTICS

1co

hie *hFE

*1cEO Coe t 1cEx *Cob
(µA) (pf)

*250 45 *40-lZO *40-lZO
*15

0.1

*25

0.005 *13

.ooz *15

.ooz *15

.OZ5 *6

Packoge Outline
(TO-)
5 5 77 77 46

Remarks
TR, AMP, TRWS TRWS, CDC, AL. TR, AMP Diff. Amp. Diff. Amp.

zoo Z.3 80

50

*15

zoo Z.3 60

50

*lZ.5

zoo 4.3 60

500

*100

zoo 4.3 60

500

*100

125 8.0

40

-

*80

.OZ5 *6

46

.OZ5 *6

46

U.0001 *8. 18 GI

U.0001 "'!!

18

GI

0.05 *20 -

TEC, GME'

1Z5 8.0 60

-

1Z5 8.0 40

-

zoo 6.9 60

50

zoo 6,9 60

50

zoo 6.9 60

50

*80

0.05 *ZO -

*150

0.05 *18 -

IEC, GME

*40-lZO .01

*6

18

*100-500 .01

*6

1e

*ZBO

0.0001 *3.5 18 AMP, GI, TR, AL, UC

zoo 10.3 60

-

175 5.3 *lZO 300

175 5.3 *lZO 300

175 5.3 *lZO 300

175 5.3 *80 300

70

0.005 *13 18 TRWS, CDC, AMP, AL

*10·150 1

*8

5

*10·150 1

*10 5

*10-150 1

*8

5

*10·150 1

*10 5

175 5.3 *120 300

*10-150

l

175 5.3 *lZO 300

*10·150

l

175 5.3 *120 300

*10·150 l

175 5.3 *150 300

*12

10

175 20

*50 500

1.0

50

*8. 5

*8

5

*8

5

*8, 5

*10 5

NUC

85 0.6 *25 10

150

85 1.7 *25 10

150

zoo 3.42 45

30

*450

200 3.42 45

30

*240

200 3.42 45

30

*450

-

-

7

-

-

7

0.001 *5

5 SPR, GI, AL, UC, MO

0.001 *5

5

GI, AL, UC, MO, SPR

0.001 *5

5 SPR, GI, AL, UC, MO

200 3.42 45

30

*240

200 3.42 45

30

*450

200 3.42 60

30

*240

200 3.42 60

30

*450

200 1.71 45

30

*240

0.001 *5 0.001 *5 0.001 *5 0.001 *5 0.001 *5

5

SPR, GI, UC, RCA, AL, MO

5 SPR, GI, UC, RCA, AL, MO

5 SPR, GI, AL, UC, MO

5 SPR, GI, AL, UC, MO

18 GI, AL, UC, MO, SPR

200 1.71 45

30

*450

200 1.71 45

30

*240

200 1.71 45

30

*450

zoo 1.71 45

30

*240

200 1.71 45

30

*450

0.001 *5 0.001 *5 0.001 5 0.00! 5 o.~1 *5

18 GI, AL, UC, MO, SPR

-

Gl,AL,UC,MO,SPR, VEC

18 GI, AL, UC, MO, SPR, VEG

18 GI, AL, UC, MO, SPR

18 GI, AL, UC, MO, SPR

2oa 1.71 60 200 1.71 60 zoo 4.3 60 300 2.3 60 300 4.6 80

30

*240

30

*450

500

*100

1000 *40

1000 *100

0.001 5

18 GI, AL, UC, MQ SPR, VEG

0.001 *5

18 GI, AL, UC,MO,SPR, VEG

0.0001 *8

18 GI

.010 *12 46

.010 *12 5

MO, TRWS

300 4.6 80

1000 *40

300 2.3 60

1000 *100

90 3.1 30

20

27

75 1.33 *32 10

150

75 1.7 *32 10

150

.DlO *12 5

MO, TRWS

.010 *12 46

10

3

12

-

-

18 4 Lead

-

-

18 4 Lead

85 0.6 *32 10

150

200 2.3 60

50

*20

75 0.6 *32 10

150

85 0.6 *32 10

150

175 13.3 *60 -

*40

175 13.3 *120 -

*80

175 10

*60 -

*75

-

-

7

.025 *6

46

8

2.5 12

8

2.5 39 Veb=1 Volt

0.01

*20 5

TRWS, TR, GI, AMP, CDC,

NA '

0.01

12

5

TRWS, SY, TR, GI, AMP,

CDC, NA, RCA

0.01 *17 18 TRWS. CDC, SY , TR, GI,

AMP, AL, NA,MO

200 10.3 *75 -

*80

175 10

*120 -

*80

200 10. 3 60

-

*75

200 10.3 60

-

140

0.003 *18 18 CDC, MO, T.R, GI, AMP, AL,

NA, RCA, TRWS

0.01

12

18 TRWS, CDC; TR, GI , AMP, AL

0.004 *13 18 TRWS, CDC, GI, AMP, AL

0.005 *13 18 TRWS, CDC, AMP, AL

175 13.3 *30 -

*35

200 17.2 *75 -

*80

100 0.8 *25 50

45

100 1.0 *40 10

45

0.1

*30 5

0.003 *18 5

1.5

*1.3 9

1.5

*1.3 9

AL, NA, GI TRWS, CQC, MO, TR, GI, AMP, AL, RCA *PH orig Reg
*PH orig Reg

(see pages 4-9 for explanation of company abbreviations.)

May 17, 1966

39

High-Frequency (continued)

Cross Index Key HF 29
HF 30
HF 31
HF 32
HF 33
HF 34
HF 35

Type Ho.
ZN1973 ZNZ451 ZN2720 ZNZ721 Tl537
ZN501 ZNZ188 2N2190 ZN2596 2N2599
ZN2602 ZN4104 2N384 2N697
ZN728 ZN729 ZN 871
ZN956
ZN979 ZN980 ZN987 ZN1180 2N1225
ZN 1396 2Nl420
ZN1499A 2Nl711
2N 1726 2Nl727 ZN 1728 2N 1746 ZN 17 47
2N1748A ZN 1788 2N 1789 2N 1790 2N1893A
2N 1958 2N 1958A ZN 1959 ZN 1959A 2N 1964
ZN 1965 ZN20 84 2N2330 ZN2331 2N2405
ZNZ591 ZN2722 ZNZ 895 2N2896 2N2897
2N2898 2N2899 ZN2900 2N294 7 2N2948
2N2949 2NZ950 2N3702 2N3703 2N3704
2N3705 2N3706 2N3798 2N3799 2N3800

fae

*IT

p c

Mfr.

Type

(MHz) {mW)

FA npn,DP ,si

*80 3W

SPR pnp,MAT,ge *80 Z5

SSD npn,PL

*80 600

SSD -

*80 600

Tl pnp,PE

*80 200

*SPR pnp,MD,ge
Tl pnp,AD,ge Tl pnp,AD,ge SSD pnp,PL
SSD p.np,PL

*90 60

*90 125

90

125

*90 400

*90 400

SSD pnp,PL
Tl npn,PL,si RCA pnp,DR,ge
FA npn,DD,si

*90 400 *90 300 100 120
*100 2.0W

TR npn,PE,si TR npn,PE,si FA npn,DP,si

FA npn, DP, si

SPR pnp,MD,ge SPR pnp,MD,ge AMP pnp,PADT,ge RCA pnp,DR,ge RCA pnp,DR,ge

RCA pnp,DR,ge FA npn,DD,si

*SPR pnp,MD,ge FA npn,DP,si

*SPR pnp,MD,ge
*S PR pnp,MD,ge *SPR pnp,MD,ge *SPR pnp,MD,ge *SPR pnp,MD,ge

*SPR *SPR
*S PR *SPR TRWS

pnp,MD,ge pnp,MD,ge pnp,MD,ge pnp,MD,ge
npn,PL,si

SY npn,PE,si
SY npn,PE,si SY npn,PE,si
SY npn,PE,si SY npn,EP,PL,si

SY npn,EP,PL,si AMP pnp,PADT,ge MO npn ,PE,si
MO npn,PE,si RCA npn,si

SSD pnp,PL SSD npn,PL RCA npn,si RCA npn,si RCA npn,si

RCA npn,si RCA npn,si RCA npn,si MO pnp,EP,si MO npn, EP ,si

MO npn, EP ,si MO npn,EP,si
Tl pnp,PL,si Tl pnp,PL,si
Tl npn,EP,si

Tl npn,EP,si Tl npn ,EP,si
MO pnp,AE,si MO pnp,AE,si MO pnp,AE,si

100 300 100 300 *100 l.8W
*100 LBW
*100 60 *100 60 100 86 100 80 100 120
100 120 *100 2W
*100 60 *100 2W
100 60 100 60 100 60 100 60 100 60
*100 60 100 60 100 60 100 60 *>100 3W
*100 600 *100 600 *100 600 *100 600 *100 400
*100 400 100 1Z5 *100 3W *100 1.8W *100 5W
*100 400 *100 600 *100 1800 *100 1800 "'100 LBW
*100 1800 *100 1800 *100 1800 *100 25W *100 25W
*100 6W *100 6W *100 300 *100 300 *100 300
*100 300 *100 300 *100 1200 *100 1200
*100 J 360

MAX. RA TINGS

T

VCEO

j

*VCBO 'c

(oC) mW / °C (V) {mA)

200 4.56 60

-

85 4.54 *6

50

200 3.4 60

50

200 3.4 60

50

125 2

32

50

100 0.8 *15 50

85 2.1 *40 30

85 2.1 *60 30

200 2.3 60

50

200 2.3 80

50

CHARACTERISTICS

1co

hie *h FE

*1cEO Coe t ic EX *Cob
(µA) (pf)

140

0.005 *13

40

5

6

*35

.010 -

*35

.010 *6

45

0.1

*0.5

*35

1

*1.5

90

1.0

*1.6

90

1. 0

*1.6

*30

.025 *6

*30

.025 *6

Package Outline
(TO-)
5 24 5 5 92
1 58 58 46 46

Remarks TRWS, CDC, AL, AMP, TR Differential amp, AL, SPR Differential amp, AL, SPR
*PH orig ·Reg, GI

200 2.3 60

50

*25

175 2

60

50

*400

100 -

40

-

60

175 13.3 *60 -

*75

.025 *6

46

0.01

4.5

18

12

-

44

0.01 *20 -

TRWS, MO, TR, GI, AMP, CDC, BE

NA, RCA

175 4

15

100

*20-200 5

*12 18

175 4

30

100

*20-200 5

12

18

200 10.3 60

lOA *30

0.004 *13 18 TRWS; CDC, GI, AMP, AL

NA, RCA, AMP

200 10. 3 *75 -

*130

0.003 *18 18 TRWS, CDC, MO, GI, AMP

100 0.8 *20 100

*70

100 0.8 *20 100

*70

90 1.33 *40 10

100

71 -

*30 10

100

85 -

*40 -

60

1

*1.5 18

1

*1.5 18

-

-

18 4 Lead

12

-

45

12

-

33 AMP

100 -

*40 10

90

175 13.3 *60 -

*200

100 0.8 *20 100

*70

200 17.2 *75 -

*130

4

*2

33 SY, AMP

0.01

17

5

TRWS, CDC, MO, TR, GI, AMP,

NA

1

*1.5 9

*PH orig Reg, GI

.003 *18 5

TRWS, CDC, MO, TR, GI, AL

100 0.8 *20 50

60

100 0.8 ' *20 50

*60

100 0.8 *20 50

*60

100 0.8 *20 50

70

100 0.8 *20 50

70

1.5

*1.5 9

*PH orig Reg

1.5

*1.5 9

*PH orig Reg

1.5

*1.5 9

*PH orig Reg

1

*1.2 9

*PH orig Reg

I

-

9

*PH orig Reg

100 0.8 *25 50
100 0.8 *35 50
100 0.8 *35 50 100 0.8 *35 50 200 17.14 *140 500

70

1.5

150

1.5

200

1.5

120

1.5

*40-120 .01

*1.3 9

*1.5 9

*1.5 9

*1.5 9

50

5

*PH orig Reg
*PH orig Reg *PH orig Reg *PH orig Reg GI, TR

175 175 -
175 175 175 -

*60 500

*20-60

0.5

18

!J

GI

*120 500

*20-60

300

18

5

GI

*60 500

*40-120 0.5

18

5

~.GI, NA

*120 500

*40-lZO 0.5

18

5

GI, NA

*60 500

*20-60

0.5

18

46

NA

175 -

*60 500

90 1.93 *40 10

175 5.33 *30 -

175 3.33 *30 -

200 28.6 *lZO IUOU

40-120 100 *50 *50 *60-200

0.5

18

46

-

-

33

0.001 *10 5

0.001 *10 5

0.01 *15 5

NA GI , MO, TRWS

200 2.3 60 200 3.4 45 200 10.3 65 200 10.3 90 200 10.3 45

50

*35

.025

50

*60

.001

1000 *40· lZO .002

1000 *60·200 .01

la

*50·200 .05

*6

46

*6

5

*15 18

*75 18

*15 18

Differential AMP, AL, SPR

200 10.3 65

1000 *40-120 .002 *75 46

200 10.3 90

1000 *60-200 .01

*15 46

200 10.3 45

1000 "'51J.ZUU

.u:i

· 1:i

4b

175 167 *60 1.5

2.5-35

1

*60 3

175 167 *40 1.5

2.5-100 1

*60 3

175 40 175 40 125 3 125 3 150 3
150 3 150 3 200 6.9 200 6.9 200 2.06

*60 .7

*60 .7

25

200

25

200

20 800

5-100

.1

5-100

.1

*60-300 0.1

*50-150 0.1

*90-330 0.1

*20 -

*20 -

*12 -

*12 -

12

-

Plas IEC, GME Plas IEC, GME
Plas IEC, GME

30

800

*45-165 0.1

12

-

Plas IEC, GME

20

800

*30-660 0.1

12

-

Plas IEC, GME

60

50

*150-450 .01

*4

18

60

50

*300-900 .01

*4

18

60

50

*150-450 .01

*4

71 Dual

J

(see pages 4-9 for explanation of company abbreviations.)

40

ELECTRONIC DESIGN

OF THE PNP SILICON TRANSISTOR FAMILY TREE

ARE YOU CON '.ERNED WITH?

LOW LEVEL LOW NOISE
ICBO < 1 nA hfE (10 µ. A-5V'J 100-300 NF 3db

MEDIUM POWER
BVEBO BVcrn> GOV
hfE UmA to lOOmlV>lOO
trcr <100 NSEC

INTEGRATED CHOPPERS
BVEE > 50V
Vo< 50µ. V
< IEEO 1nA

DIFFUSED EPITAXIAL
BVceo BVcEO > 50V BVEBQ
hfE > 50
< 1CBO 10 nA

DIFFERENTIAL AMPLIFIERS
hfE > 100
hfE I 10% hf E2 VaE·1-VBE2 = ± 3 mV

2N2603 2N2604 2N2605 2N3544 2N3548 2N3549
May 17, 1966

2N2485A 2N2486A
2N2904A - 2N2907A 2N3502 - 2N3505

jN90-3N95 3N114- 3Nl19

2N328A 2N329A 2N2944
2N2945
2N2946
2N3857 2N3058 - 2N3065

NS7200 NS7201 2N3502 2N3503 2N3504 2N3505 2N3800 - 2N3811
NSC·l30

~4/i'C--....,

NATIONAL
ON READER-SERVICE CARD CIRCLE 14

SEMICONDUCTOR CORPORATION DANBURY. CONN.
41

High-Frequency (continued)

Cross

Index Type

Key

Ho.

HF 36

2N3801 2N3802 2N3803 2N3804 2N3805
2N3806 2N3807 2N3808 2N3809 2N3810

HF 37

2N3811 40084 40354 FT34A FT348
NS1355 MCS2135 MCS2136 MCS2137 NS1356

HF 38

MCS2138 Tl411 TN·53 TN-54 TN·59
TN-60 TN-61 TN-62 TN-63 TN-64

HF 39

TN-237 TN-238 2Nl253 2N2189 2N2191
2N501A 2N 1023 2N 1066 2N 1397 2N 1500

HF 40

2N2597 2N2600 2N2603 2N2798 2N2799
2N2837 2N2838 2N2943 2N 1710 2N768

2N2592 40340 40341 SFT443A 2N2193A
HF 41 2N2194A 2N2195A 2N2243A 2N2350A 2N2351A

I

2N2352A 2N2353A

2N2364A

2N3843

2N3843A

HF 42

2N3844

2N3844A

2N3845

2N3845A

2N 1177

MAX. RA TINGS

fae
*fr

p c

T
j

VCEO *VCBO IC

Mfr.

Type

(MHz) (mW) (oC) mW / °C (V) (mA)

MO pnp,AE,si MO pnp,AE,si MO pnp,AE,si MO pnp,AE,si MO pnp,AE,si

*100 360 *100 360
*100 360 *100 360
*100 360

200 2.06 60

50

200 2.06 60

50

200 2.06 60

50

200 2.06 60

50

200 2.06 60

50

MO pnp,AE,si

··100 600

MO pnp,AE,si

·100 600

MO pnp,AE,si . ·100 600

MO pnp,AE,si

*100 600

MO pnp,AE,si

*100 600

200 3.4 60

50

200 3.4 60

50

20Q 3.4 60

50

200 3.4

60

5o

200 3.4

60

50

MO pnp,AE,si RCA npn,si · RCA npn,si FA npn,DPE,si FA npn,DPE,si

*100 600
*100 l.8W *100 500
100 100 -

200 3.4 60

50

200 10

40 la

175 3.3 *150 50

200 .0286 *150 -

200 .0286 *120 -

NA npn,PL,si MO npn,AE,si MO npn,AE,si MO pnp,AE,si NA npn,PL,si

*100 600 *100 150 *100 150 ·100 150
*100 800

200 3.5 40

100

125 1.5 60

50

125 1.5

60

50

125 1.5 60

50

200 4.5 40

100

MO pnp,AE,si Tl npn,EP, si SPR npn,PE, si SPR npn, PE,si SPR npn,PE,si

*100 150 *100 300 100 800 100 800 100 800

125 1.5 60

50

150 2.4 30 800

200 4.57 45

800

200 2.86 45 800

200 4.57 30

800

SPR npn, PE, si SPR npn,PE,si SPR npn,PE,si SPR npn,PE,si SPR npn,PE,si

100 500 100 800 100 500 100 800 100 500

200 2.86 30

800

200 4.57 30

800

200 2.86 30

800

200 4.57 20 800

200 2. 86 20

800

SPR npn, PE, si SPR npn, PE,si FA npn,DD,si Tl pnp, AD, ge Tl pnp, AD ,ge

100 800 100 500 *110 2.0W 110 125 110 125

200 4.57 *35 800 200 2.86 ·35 800 175 13.3 *30 85 2.1 *40 30 85 2.1 *60 30

*SPR pnp,MD,ge RCA pnp, DR,ge RCA pnp, DR,ge RCA pnp, DR,ge *SPR pnp,MD,ge

*120 60
120 120 120 120 120 120 *120 60

100 0.8 *15 50

100 -

40

-

100 -

*40 -

100 -

*40 10

100 0.8 *15 50

SSD pnp,PL SSD pnp,PL SSD pnp,PL SPR pnp,ED,ge SPR pnp,ED,ge

*120 400 *120 400
*120 400 *120 75 *120 75

200 2.3 60

50

200 2.3 80

50

200 2.3 60

50

100 1

*60 100

100 1

*30 100

MO pnp, EP,si MO pnp, EP,si SPR pnp,ED,ge TRWS npn,PL,si *SPR pnp,MD,ge

*120 l.8W

200 10.3 35

800

*120 l.8W

200 10.3 35

800

*120 150

100 2

*30 100

*>120 15000 175 100 *60 2000

*124 35

100 0.467 *12 100

SSD pnp,PL RCA npn,si RCA npn,si NUC npn,si GE npn,PE,si

*125 400

200 2.3 60

50

*125 70W

200 400 -

lOA

*125 70W

200 400 -

lOA

*125 12,000 - -

80 -

*130 2.8W

200 1.6 50

lA

GE npn,PE,si GE npn,PE,si GE npn,PE,si GE npn,PE,si GE npn,PE,si

*130 2.8W

200 16

40

lA

*130 2.8W

200 16

25

lA

*130 2.8W

200 16

80

la

*130 5,000 200 28.5 25

1,000

*130 5,000 200 28.5 50

1,000

GE npn,PE,si

*130 5,000 200 28.5 40

1,000

GE npn,PE,si

*"130 5,000 200 28.5 25

1,000

GE npn,PE,si

*130 5,000 200 28.5 80

1,000

GE npn,PE,si

*135 200

100 2.67 30

100

GE npn,PEP ,si *135 200

100 2.67 30

100

GE npn,PE,si GE npn,PEP,si GE npn,PE,si GE npn,PEP,si RCA pnp,DR,ge

*135 200 *135 200 *135 200 *135 200 140 80

100 2.67 30

100

100 2.67 30

100

100 2.67 30

100

100 2.67 30 0.5

71 -

*30 10

CHARACTERISTICS

1co

hfe *hFE

*1cEO Coe tic EX *C ob
(µA) (pf)

Pockoge Outline
(TO-)

Remarks

*300-900 .01

*4

71 Dual

*150-450 .01

*4

71 Diff. Amp.

*300-900 ·01

·4

71 Diff. Amp .

*150-450 .01

·4

71 Diff. Amp.

*300-900 .01

·4

71 Diff. Amp.

*150-450 .01
*300-900 .01
*150-450 .01 *300-900 .01 *150-450 .01

·4

77 mod Dual; Low Profile Can

·4

77 mod Dua I; Low Profile Can

·4

77 mod Diff. Amp.; Low Profile Can

*4

77 mod Diff. Amp.; Low Profile Can

·4

77 mod Diff. Amp.; Low Profile Can

*300-900
*50-250
-
*120 *300

.01

*4

0.25 15

.005 (max) 2;8

-

1.2

-

1.2

77 mod
1-8
59 59

Diff. Amp.; Low Profile Can

*30· 100 .025 *7

18 VHF 400mW@ 70 Hz

*100-300 .01

*3

-

*250-750 .01

·3

-

*100-300 .02

·3

-

*30-100 .025 *7

5

VHF 400mW@70 Hz

*250-750 .02

·3

-

*180-660 0.1

*12 -

Plas IEC, GME

*50

. 010 8

5

*50

. 010 8

5

*100

.020 8

5

*100

.020 8

18

30

.020 8

5

30

. 020 8

18

20

0.1

8

5

20

0.1

8

18

30

1

*8

5

30

1

*8

18

*45

0.1

*30 5

AL, NA

135

1.0

*1.6 58

135

1. 0

*1.6 58

*100

1

*1.5 1 *PH orig Reg, GI

60

12

-

44

*60

12

-

33 AMP . KSC

90

4

*2

33 SY, AMP

*50

1

*1.5 9

*PH orig' Reg, GI

*60

.025 *6

46

*60

.025 *6

46

*50

.025 *6

46

*50

-

*2.5 9

*50

-

*2.5 9

*30-90

-

*75-225 -

*50

-

4.0

50

*40

1

*25 18 *25 18
*2.5 9 *40 8 *1.6 18

*PH orig·Reg

*70

.025 *6

46

-

*100 *120 60 Vcev= 60; overlay type

-

*100 *85 60 Vcev = 80; overlay type

*15

10

20

60

*40-120 .01

*20 5

CDC, GI, FA, NA, MQ AL

*20-60 20

.010 *20 5 0.01 *20 5

CDC, FA, GI, NA, MO, AL
cpc, FA, GI, MO, AL

*40-120 .01

*20 5

GI

*20

.01

*20 46

*40-120 .01

*20 46 NA

*20-60

.01

*20

.01

*40-120 .01

20-40

0.5

*20-40

0.5

*20 46 *20 46 *20 46
"'2.8 98 *2..8 98

NA NA CDC, NA
10.5 d 8 (max rf nf) 8.5 d B(max rf nf)

35-70

0.5

*35-70

0.5

60-120

0.5

*60-120 0.5

100

12

*2.8 98

*2.8 98

*2.8 98

*2.8 98

-

45

10.5 d 8 ( max rf nf) 8.5 d B(max rf nf) 10.5 d 8 (max rf nf) 8.5 d 8 (max rf nf) LAN

(see pages 4-9 for explanation of company abbreviations.)

42

ELECTRONIC DESIGN

High-Frequency (continued)

Cross

Index

Type

Key

Ho.

MAX. RA TINGS

CHARACTERISTICS

Mfr.

Type

1ae *fr

p c

T.
J

VCEO
*VCBO 'c

(MHz) (mW) (oC) mW / °C (V) (mA)

hie *hFE

1co
*1CEO t lCEX (µA)

Coe Pockoge *Cob Outline (pF) (TO-)

Remarks

HF 43

2N 1178 2N 1179 2Nl5!Xi 2Nl506A 2N287 4
2N2781 2N2782 2N2783 2N702 2N703

RCA RCA
TRWS
TRWS TRWS

pnp,DR,ge pnp, DR,ge npn,PL npn,PL,si npn,PL,si

TRWS npn,PL,si TRWS npn,PL,si TRWS npn,PL,si Tl npn,si Tl npn,s1

140 80

71 -

*30 10

40

140 80

71 -

*30 10

80

*>140 3W

175 20

*60 500

2

*>140 3.5W

200 20

*80 500

2

*140 15000 175 100 *75 2000 2

*> 140 :5000 175 100 *75 2000 2

*> 140 15000 175 100 *100 2000 2.

*> 140 15000 175 100 *100 2000 2

*150 300

175 2

25

50

*20

*150 300

175 2

25

50

*40

12

-

45 LAN

12

-

45 LAN

10

*10 5

NUC

.05

*10 5

10

*40 8

500

*40 8

500

*40 8

10

*40 8

0.5

*3

18 TRWS; GI, NA

0.5

*3

18

TRWS~ FA, SY, GI , NA

..

2N758B 2N995

SSD npn,PL

*150 500

200 2.85 60

50

*12 .5

.005 *6

18

FA pnp,PE,si

*150 l.2W

200 6.9

15

-

*70

0.001 *8

18 MO, TR

2Nl499B

SPR pnp,ED,ge

*150 75

100 1

*30 100

*70

0.6

*2.5 9

2Nl709

TRWS npn,PL,si

*150 15000 175 100 *75 2000 5

10

*40 8

NUC

2N2048

*SPR pnp,MD,ge

*150 150

100 2

*20 100

*125

1

*1.5 9

*PH orig Reg

HF 44

2N2048A

*SPR pno,MD,ge

*150 150

100 2

*30 100

*50

-

3

9

*PH orig Reg

2N2400

*SPR pnp,MD,ge ·*150 150

100 2

*12 100

*30

3

4

18 *PH orig Reg

2N2520

SSD npn,PL

*150 400

200 2.3 60

50

*12 .5

.005 *6

46

2N2593

SSD pnp,PL

*150 400

200 2.3 60

50

*100

.025 *6

46

2N2604

SSD pnp,PL

*150 100

200 2.3 45

50

*60

.010 *6

46 Tl, AL, UC

HF 45

2N2654 2N2797 2N2927 2N2942 2N3081
ZN3081/ 46 ZN3081/51 2N324S 2N3262 2N3638

AMP pnp,AD,ge

150 100

SPR pnp,ED,ge

*150 75

FA pnp,PE,si

*150 3000

SPR pnp,EO,ge

*150 150

SY pnp,EP,PL,si *150 600

75 0.5 *32 10

100 1

*40 100

200 4.56 25

-

100 2

*50 100

175 -

*70 600

50 *80 *60
*80 *30-90

SY npn,PL,Ep,si *150 400

175 -

*70 600

*30-90

SY npn, PL, EP ,si *150 300

175 -

*70 600

*30-90

MO pnp,ED,si

*150 SW

200 28.6 50

lA

*30-90

RCA npn,si

*150 8.75W 200 5.71 80

1.5A 3

FA pnp,PE,si

*150 700

125 7.0 25

500

*40

8

*1.5 12

-

*2.5 9

0.001 *12 5

-

*2.5 9

.01

13

5

.01

13

46

.01

13

51

.050 *25 5

0.1

*20 39

0.0001 *12 -

Tl IEC, GME

HF 46

2N3763 2N3765 2N3818 SFT440 2Nl499A
2N3962 2N3963 2N3964 2N3965 40263

MO pnp,AE,si

*150 4000

200 22.8 60

1500 *20-80

-

*15 5

lcex=0.1

MO pnp,AE,si

*150 2000

200 11.4 60

lSOO *20-80

-

*15 46 lcex=0.1

MO npn ,EP,si

*150 25000 175 167 *60 2000 *5-50

1

*40 60

NUC npn,si

*150 12,000 - -

80

1000 *10

10

15

60

PH pnp,ge

*160 60

100 0.8 *20 100

*70

0.6

*1.5 9

GI

FA pnp,DP,si

160 1.2 w 200 6.85 60

50

*300

FA pnp,DP,si

160 1.2 w 200 6.85 80

50

*300

FA pnp,DP,si

160 1.2 w 200 6.85 45

50

*500

FA pnp,DP,si

160 1.2 w 200 6.85 60

50

*500

RCA pnp, DR,ge

160 120

100 2.66 *20 50

12

-

*6

18

-

*6

18

-

*6

18

-

*6

18

10

-

1

HF 47 HF 48

2N2525 A301 2N2913 2N735A 2N739A
2N759B 2N2207 2N2459 2N2463 2N2512
2N2SlS m518 2N2519 2N2S21 2N260S
2N3244 2N32S3 2Nl493 2N2494 2N249S

TRWS npn,PL,si AMP npn,PL,si FA npn,DP,si SSD npn,PL SSD npn,?L
SSD npn,PL AMP pnp,AO,ge SSD npn,PL SSD npn,PL
pnp,AD,ge
SSD npn,PL SSD npn,PL SSD npn,PL SSD npn,PL SSD pnp,P.L
MO pnp,ED,si MO npn,AE,si RCA npn,si AMP pnp,AD,ge AMP pnp,AD,ge

*162 16000 200 91.43 80

1000 2.23

*165 300

175 2

*40 40

*600

*170 l.5W

200 3.42 45

30

~240

*175 500 *175 500

200 2.85 60 200 2.85 80

5so0

*30 *30

-

*25 -

.5

11

l&

0.001 *5

5

SPR, GI, AL, UC, MO

.005 *6

18 TR

.005 *6

18

TR

*175 500

175

~60

*175 *175

4so0o0

175 260

*17S 400 *175 400 *175 400 *175 400 *175 400

*175 SW *175 SW
*180 3W 180 100 180 100

200 2. 8S 60

50

75 0.25 *70 50

200 2.3 60

50

200 2.85 60 7S 0.25 *70

s5o0

200 2.3 60 200 2.3 80
200 2.3 80

so so so

200 2.3 60 200 2.3 45

s5o0

200 28.6 40

lA

200 28.6 17S 20

*40 *1 00

s-o

8S 1.67 *3S 10

8S 1.67 *3S 10

*25

.005 *6

18

200

-

-

7

*20

.002 *6

46

*20

.002 *6

18

200

5

-

33 AMP

*30

.oos *6 46

*30 *60 *2S

.005 *6

46

..ooooss

*6 *6

46 46

*150

.010 *6

46 Tl, AL, UC

*50-150

.OSO

*2S

s

Tl

*2S-75

.5

*12 5

NA

lS- 200

10

*S

39

70

2

-

7

70

2

-

33

HF 49

2N2496 2N3074 2N3762 2N3764 2N588
2N706 /51 2N706A/ 51 2N706B/ 46 2N706B/ 51 2N706C /46

AMP pnp,AD,ge

180 100

AMP pnp,PADT,ge 180 140

MO pnp,AE,si

*180 4000

MO pnp,AE,si

*180 2000

*SPR pnp,MD,ge

200 30

SY npn,si SY npn,si SY npn,PE,si SY npn,si SY npn,si

200 300

200 300

~zoo

400

200 300

200 400

8S 1.67 *3S 10

70

2

90 3.1 25

20

*14

10

200 22.8 40

lSOO *30 -120 -

200 11.4 40

lSOO *30 -120 -

8S 0.75 *15 50

-

3

200 -

15

50

*20-60

.025

200 -

*25 50

*20-60

0.5

200 -

*25 50

*20-60

0.5

200 -

*25 50

*20-60

0.5

200 -

15

50

*20-60

.025

-

18

3

12

*lS 5

lcex=O.l

*15 46 lcex =O.l

-

1 *PH orig Reg, GI

s

51 TR

s

51 TR

s5'

46 GI, TR, NA 51 TR

5

46 GI, TR

(see pages 4-9 for explanation of company abbreviations.)

May 17, 1966

43

High- Frequency <continued)

Cross

Index

Type

Key

No.

MAX. RA TINGS

CHARACTERISTICS

Mfr.

Type

1ae *fr

p c

T
j

VCEO *VCBO IC

(MHz) (mW) (oC) mW / °C (V) (mA)

hie *hFE

1co

* 1cEO t ic Ex

Coe *C ob

Package Outline

(µA) (pf) (TO-)

Remarks

2N706C/ 51

SY npn,si

200 300

200 -

15

50

*20-60

.025 5

51

TR

2N736B

SSD npn,PL

*200 500

200 2.85 60

50

*6 0

.005 *6

18 TR

2N740A

SSD npn,PL

*200 500

200 2.85 80

50

*60

.005 6

18 TR

2N752

NA npn,DM,si

*200 500

200 2.5 45

100

40-120

0.1

5

18

2N760B

SSD npn,PL

*200 500

200 2.85 60

50

*50

.005 *6

18 TR

HF 50

2N783 2N869

SY npn,EP,si FA pnp, DP,si

200 300 *200 l.2W

100 -

*40 200

200 6.86 18

-

*20-80 *60

.025 3.5 18 FA 0.005 *60 18 MO

.

2N 1962

SY npn,PE,si

200 400

175 -

*40 200

*20-80

0.25 3.0 46

2N 1963

SY npn,PE,si

*200 400

175 -

*30 200

*25

0.25 3.5 46

2N2397

SY npn,PE,si

*200 300

200 -

*35 200

*2S· 120 0.1

5

51

HF 51

2N2401 2N2460 2N2464 2N2516 2N2S22
2N2618 2N2618/ 4 2N2876 2N29 04 2N2904A

*SPR pnp,MD,ge SSD npn,PL SSD npn,PL SSD npn,PL SSD npn,PL
SY npn,PE,si SY npn,PE,si RCA npn,si MO pnp,AE,si MO pnp,AE,si

*200 150 *200 400 *200 500 *200 400 *200 400

100 2.0

*IS 100

*50

200 2.3 60

so

*35

200 2.85 60

50

*35

200 2.3 60

so

*60

200 2.3 60

50

*SO

1.5

4

·18 *PH orig Reg

.002 *6

46

.002 *6

18

..ooooss

*6 *6

46 46

*200 600

175 -

*60 7SO

*50-200 .2S

*200 400

17S -

*60 7SO

*S0-200 .2S

*200 17500 200 100 60

2SOO S0-27S

0.1

*200 3W

200 17.2 40

600

*40-120 .02

*200 3W

200 17.2 60

600

*40-120 .01

14 s 14 s

*20 -

*8

5

*8

5

TRWS
Tl, VEC GI, TR, SPR, AL GI , TR, SPR , AL

HF 52 HF 53

2N290S 2N2905A 2N2906 2N29 06A 2N2907
2N2907 A 2N2951 2N2952 2N3133 2N3134
2N 313S 2N3 136 2N3229 2N3252 2N3298
2N3323 2N3324 2N33 2S 2N3426 2N361 9

MO pnp,AE ,si MO pnp,AE,si MO pnp,AE,si MO pnp,AE,si MO pnp,AE,si
MO pnp,AE,si MO npn, EP,si MO npn, EP ,si MO pnp,AE ,s i MO pnp,AE,si
MO pnp,AE,si MO pnp,AE,si RCA npn,si MO npn .AE,si MO npn,E,si
MO pnp,EA,ge MO pnp, EM,ge MO pnp,EM,ge FA npn ,PE ,si BE npn,PE,si

*200 3W

*100 200 40

600

100-300 .02

*200 3W

200 17.2 60

600

100-300 .01

*200 1.BW

*100 10.3 40

600

40-120

.02

*200 LBW

200 10.3 60

600

*40-120 0.01

*200 l.BW I 200 10.3 40

600

*100-300 .02

*200 l.BW
*200 3W *200 1.BW *200 3W
*200 3W

200 10.3 60

600

17S 20

*60 250

175 12

*60 2SO

200 17.3 3S

600

200 17.3 3S

600

*100-300 .01
*20/ 150 0.1 *20/ lSO .I *40-120 .OS *100-300 .OS

*200 1.BW

200 10.3 3S

600

*40-120 o.os

*200 I.SW

200 10.3 3S

600

*100-300 .OS

*200 17.SW 200 100 60

2.SA -

0.1

*200 5W

200 28.6 *30 -

*30-90

.s

*200 lW

175 6.67 *25 100

*60-120

0.S

*200 300 I 100 4

*3S 100

*30-20(} 10

*200 300

100 4

*3S 100

*30-200

10

*200 300

100 4

*3S 100

*30-200 10

*200 3W

200 17 .2 12

IA

~s o

1.5

*200 7.SW

17S so

*7S 2.SA *40

2S

*8 *8

s s

GI, TR, SPR, AL GI, TR, SPR, AL

*8

18 TR, SPR, AL

*8

18 GI, TR , SPR, AL

*8

18 GI , TR , SPR , AL

*8

18 GI, TR, SPR, AL

*8

s

TRWS, SPR

*8

18 TRWS

*10 s SPR

*10 s SPR

*10 18 SPR

*10 18 SPR

*20 60 15 W(min.)@ SOMHz

*12 5

NA

*6

18 TRWS

*3

18

*3

18

*3

18

*6.2 *SO

-s

HF 54

2N3621 2N3622 2N 3620 ZN 3623 2N3624
2N 362S 2N3626 2N3627 2N3628 2N3629

BE npn,PE,s i BE npn,PE,si BE npn,PE,si BE npn,PE,si BE npn, PE ,s i
BE npn,PE,si BE npn,PE,si BE npn,PE,si BE npn,PE ,s i BE npn, PE,si

200 lSW 200 15W 200 7.SW 200 7.5W 200 7.5W
200 15W 200 lSW 200 7.SW 200 7.SW 200 20W

175 200 *75 SA

*40

175
175 17S 17S

200
so so so

*75 *75 *7S *7S

IOA SA 2S SA

*40
*40 *40 *40

17S 200 *7S SA

*40

17S l 7S

200
so

*75 IOA *100 2.5A

*40 *40

l 7S so

*100 SA

*40

17S 200 *100 lOA *40

25

*50 61 Isolated Collector

2S

*50 61

2S

*50 t

tMT-27

1

*50 5

1

*50 t

tMT-27

2S

*50 61 Isolated Collector

1

*50 61

1

*50 5

1

*50 t

tMT-27

1

*50 61 Isolated collector

HF S5 HF 56

2N3630 2N3691 2N3692 2N3693 2N3694
2N3701 2N3766 2N412S A415 A1590
FT4017 FT4018 MPS7ffi MPS2923 MPS2924
MPS2925 SFT445 TN-81 UD-3005 UD-3006

BE npn,PE,si FA npn,PL,si FA npn,PL,si FA npn,DP,si FA npn,DP,si
FA npn,DPE,si FA npn,DPE,si MO pnp,AE,si AMP npn,PL,si AMP npn,si
FA pnp,DPE,si FA pnp,DPE,si MO npn,EP ,si MO npn,EP ,si MO npn,EP,si
MO npn,EP,si NUC npn,si SPR npn, PE,si SPR npn,PE,si SPR pnp,PE,si

200 20W *200 62S *200 62S
200 500
200 soo

17S 200

lSO 2

lSO 12S

2 s

12S s

*100 lOA

*3S 50
*3S so

45

-

4S -

200 1.8 w 200 10.3 80

1000

200 1.8 w 200 10.3 80

1000

*200 310

13S 2.81 30

200

*200 165

17S 1.1 *50 30

200 165

17S 1.1 *SO 30

*200 1.1 w 200 .0062 80

200

*200 1.1 w
*200 500

200 .0062
12S s

60 *2S

200
-

*200 200

100 2.67 2S

100

*200 200

100 2.67 2S

100

*200 200 *200 3 200 800 200 3SO 200 3SO

100 2.67 2S

100

--

*80 -

200 4.S7 20

800

200 -

*60 600

200 -

*60 600

*40

1

*40-160 .OS

*100-400 *40

.sOS

*100

5

*120

10

*300

10

*SO-lSO .OS

*12S

. 010

*12S

.010

*50 61

.S-3.S -

.5-3S -

--

-

-

-

18

-

18

*4.S 92

-

72

-

72

*100-SOO .010

*100-600 *20

.o0.1s0

235-470 o.s

IS0-300 o.s

--

--

*6 *12

I

92 92

*12 92

90-180

0.5

*12 92

*10 *50

1 0.1

8 *8

s s

*100-300 0. 010 *8

8S

*100-300 0.010 *8

BS

R097A package, CDC R097A package, CDC ROllO package ROllO package
Cre=0.S5 pf . Cre=0.55 pf. Dual pnp Dual pnp
npn Quad pnp Quad

--
-- - '

(see pages 4-9 for explanation of company abbreviations.)

44

ELECTRONIC DESIGN

Who could build abetter silicon power transistor than our DTS-423?

We could. Meet DTS-431.

PARAMETER
Vern

MAXIMUM TYPICAL MINIMUM
400V

Veso

400V

Vern (sus) le le

370 325

C/l o . si-----~,--

SA

a...

:E

~

2.0A

..!:! 0.2-----------,.-t---,....-t'_,..--1

Junction Temperature

150° c

-65° c

hr E (le =2.5A Ver =5V)

35

15

hf[ (le =3.5A Ver =5V)

10

TYPICAL SWITCHING TIMES:
Rise time . -0.40 Microseconds Storage time-0.45 Microseconds f~ll time -0.35 Microseconds

0.05

SQUARE WAVE PULSES OF_-+---+---4 THE SPECIFIED LENGTH

AT A DUTY CYCLE ~ 43

50 100 150 200 250 300 Ver (VOLTS)
SAFE OPERATING AREA CURVES

Introducing the DTS-431, the newest addi.. tion to Delco Radio's line of high voltage silicon power transistors. It offers you a number of distinct design advantages over the DTS-423, including an even higher . current capability.
What's more, the DTS-431 permits you to design with complete freedom within the rated specifications, for its safe operating data is not based on mere probability. Sustaining voltage (VCEO sus) tests are performed on every DTS-431 we make. Not just a sample. Every one.
Why not get all the facts from your nearest Delco Radio sales office or distributor?

FIELD SALES OFFICES

UNION, NEW JERSEY* Box 1018 Chestnut Station (201) 687 -3770

SYRACUSE, NEW YORK 1054 James Street (315) 472-2668

CHICAGO, ILLINOIS* 5151 N. Harlem Avenue (312) 775-5411

SANTA MONICA, CALIF.* 726 Santa Monica Blvd . (213) 870-8807

*Office includes field lab an4 residerit engineer for application assistance.

ON READER-SERVICE CARD CIRCLE 15

May 17, 1966

DETROIT, MICHIGAN 57 Harper Avenue (313) 873-65GO GENERAL SALES OFFICE: 700 E. Firm in Kokomo, Ind . (317) 457 -8461-Ext. 2175
45

High-frequency (continued)

Cross

Index Type

Key

Ho.

HF 57

U0 -3007 VIS154 AF 106 2N2461 2N246 5
2N 996
2 N ~ 99
2N499A 2N358B 2N 929A

HF 5B

2N947 2N957 2N1491 2N22 17
2N221 8

2N221 BA 2N32 92 2N3293

HF 59

2N3294 2N3326 2N3409 2N 3410 2N34 11
2N 3502 2N22 19

2N2220

2N222 1

2N222 1A 2N2222

HF 60

2N22 73
2N2402 2N 2462
2N2466 2N24 76

2N2477 2N2523 2N2537 2N2538 2N2539
HF 61 2N2540 2N2787
2N2788 2N27 89 2N2790

2N2791 2N27 92 2N2958 2N2959 2N301 5
HF 62 2N311 5 2N3116 2N3118 2N3119 2N32 48

HF 63

2N3250 2N3 283 2N3284 2N3285 2N3286
2N3 291 2N3503 2N3504 2N3505 2N2656

46

fae

*fr

p c

Mfr.

Type

(MHz) (mW)

SPR npn, pnp, PE,si 200 350

WH -

*200 -

SA pnp,MS,ge

220 60

sso sso

npn,PL npn ,PL

*225 400 *225 500

FA pnp,PE,si

~230 l.2W

*SPR pnp,MO,ge

240 30

*SPR pnp,MO,ge

240 60

sAsMo P

pnp,PAOT ,ge npn,PL

*240 *250

100 500

FA npn,OP,si FA npn,00,si RCA npn,si MO npn,PE,si

*250 1200
*250 BOO ~250 3000 *250 3W

MO npn,PE,si MO npn,AE,si MO npn ,E,si MO npn ,E,si MO npn, E,si GI npn ,PE,si MO npn,si MO npn ,PE,si MO npn ,PE,si FA pnp,PE,si MO npn,PE ,si MO npn,PE,si

*250 3W
*250 3W *250 300 *250 300
*250 300 *250 BOO 250 600 250 600 250 600
*250 3W *250 3W
*250 LBW

MO npn,AE ,si
MO npn,AE ,si MO npn ,AE ,si

*250 1.BW
*250 LBW *250 l.8W

MO pnp,EM,ge *SPR pnp,MO,ge
sso npn,PL sso npn,PL
RCA npn,PE,si

sRsCoA

npn,PE,si npn,PL

MO npn,AE ,si

MO npn,AE,si

MO npn,AE,si

MO npn ,AE,si GI npn,PE ,si GI npn,PE,si GI npn ,PE ,si GI npn,PE,si

GI npn,PE,si GI npn,PE,si MO npn ,AE,si MO npn ,AE,si FA npn ,PE ,si

MO npn ,AE ,si MO npn,Al:,si RCA npn,si RCA npn,si MO pnp,EO ,si

MO pnp,EO ,si MO pnp,EM,ge MO pnp,EM,ge MO pnp,EM ,ge MO pnp,EA,ge

MO npn ,E, si FA pnp,PE,si FA pnp ,PE ,si FA pnp,PE,si TRWS npn,PL,si

*250 150 *250 150 *250 400 *250 500 250 2W
250 2W *250 400 *250 3W *250 3W *250 1.BW
*250 LBW *250 3W *250 3W *250 3W *250 l.BW
*250 l.BW *250 l.BW *250 3W *250 3W *250 3W
*250 l.BW *250 l.8W *250 4000 *250 4000 *250 l.2W
*250 1.2W *250 100 *250 100 *250 100 *250 100
*250 300 *250 3W *250 l.3W *250 l.3W *> 250 1200

MAX . RA TINGS

T

VCEO

j

*VCBO 'c

(oC) mW / aC (V) (mA}

200 --
90 2.5 200 2.3 200 2.B5
200 6.B5 B5 0.75 100 0.8 75 2.2 200 2.B5
200 6.9 150 6.5 175 20 175 20

*60 600

--

18

10

60

50

60

50

12 -

*30 50

*30 *25

50 I 10

45

50

*20 100

20

-

*30 50

30 -

175 20

30

-

175 20

40

-

200 1.71 *25 50

200 1.71 *20 50

200 1.71 *20 50 175 5.33 45 BOO 200 3.4 *60 500 200 3.4 *60 500 200 3.4 *60 500

200 17.2 60

600

175 20

30

-

175 12

30

-

175 12

30

-

175 12

40

-

175 12

30

-

100 2

15

100

100 2

*18 100

200 2.3 60

50

200 2.85 60

50

200 3. 4 *60 -

200 3.4 *60 -

200 2.3 45 . 50

200 17.2 30

-

200 17.2 30

-

200 10.3 30

-

200 10.3 30

-

300 5. 33 ·75 BOO

300 5.33 ·75 800

300 5.33 ·75 800

300 3.33 ·75 BOO

300 3.33 ·75 BOO

300 3.33 ·75 BOO

175 20

20

600

- 175 20
200

20 *60

6-00

175 12

20

600

175 12

20

600

200 22.9 60

500

200 22.9 BO

500

200 6.9

12

-

200 6.9 *40 200 100 l.33 *25 50 100 1.33 *25 50 100 1.33 *20 50 100 1.33 · 20 50

200 1.71 *25 50 200 17.2 60 600
200 2.2B 45 600 200 2.2B 45 600 200 6.86 *25 200

CHARACTERISTICS

1co

hie *hFE

*1cEO Coe ticex *Cob
(µA} (pf)

Package Outline
(TO-)

Remarks

*100-300 0.010 *B B5 Complementary Quad

30

-

-

-

Quad

*50

0.5

-

lB

*70

.002 *6

46

*70

.002 *6

18

*75

0.0002 *7.5 lB TR

B. 5

1

*l.3 1

*PH orig Reg, GI

50

1

*l.3 1 *PH ori g Reg

*65

B

2

lB 4 lead

*60

.002 *6

18 AMP , TR , AL , UC

*40
*60 15-200 *2 0-60

0.1

*7

1

*5

10

*5

0.01 B

lB

18 TRWS, AMP

39

5

GI , FA , SPR, TR , NA, TRWS ,

AMP, AL

*40-1 20 0.01 B

5

GI, FA, SPR, TR, NA, TRWS,

AL, AMP

40-1 20

.01

*8

5

SPR, TR, NA, AL

10-200

0.1

*2

lB AL

10-200

0.1

*2

lB AL

10-200

0.1

*2

18

AL

*40-1 20 0.01 *B 5

*30-120 0.01 *B 5 SPR

*30-1 20 0.01 *B

5

SPR

*30-120

0.01

*B

5

SPR

*70

0.00005 4.5

5

*100-300 0.01 B

5

*20-60

0.01 8

18

*40-120 0.01 8

lB

40-120

.01

*100-300 0.01

*B lB

B

lB

*20-75
*60 *100 *100 *20

10

*3.5 lB

1.5

*4

18

.002 *6

46

.002 *6

lB

0. 2

10

5

*40

0.2

10

5

*40

.002 *6

46

*50-150

.2 5

*B

5

*100-300 .25

*8

5

*501.50 .25

*B

lB

*100/ 300 .25

*8 18

*20 -60

0. 01 *8

5

*40-120 0.01 *B 5

*100-300 0. 01 *B

5

*20-60

0.01 *B lB

*40-120 0.01 *B

lB

*100-300 0. 01 *8

18

*40-120 .025

*8

5

*100-300 .025 *8

5

·10

-

*8

5

*40-120 .025 *8

lB

*100-300 .025 *B lB

*50·275 .1

*6

5

*50-200 50

*6

5

*50-150 0.05 *B lB

*50-150 .02

*10-200 10

10-200

10

5·200

10

5-200

10

*6

18

*1.5 18

*1.5 18

*1.5 lB

*1.5 lB

10-200 *70 *70 *70 160

0.1

*2

lB

0.00007 4.5 5

0.00005 *4.5 18

0.00005 *4.5 lB

0.5

*5

lB

Tl GI, FA, SPR, TR, NA, TRWS, AL, AMP GI, FA, SPR, TR, NA, TRWS, AMP, AL
GI, FA, SPR, TR, NA, TRWS , AMP, AL GI, SPR , TR, NA, AL TRWS, GI, FA, SPR, TR , NA , AL, AMP
*PH orig Reg
SPR
SPR
GI, NA , SPR GI , NA , SPR GI, NA , SPR
GI , NA , SPR SPR SPR SPR SPR
SPR SPR GI , SPR, TRWS GI , SPR , TRWS SPR
GI, SPR , TRWS GI, SPR, TRWS
AL Tl Tl Tl KSC

(see pages 4-9 for explanation of company abbreviations.)

ELECTRONIC DESIGN

High-Frequency (continued)

Cross

Index Type

Key

Ha.

MAX. RA TINGS

CHARACTERISTICS

Mfr.

Type

1ae *fr

p c

T. J

v
*VCEO CBO 'c

(MHz) (mW) (aC) mW / °C (V) (mA)

hie *hFE

1co *1cEo tic EX
(µA)

Coe Pock age *C ab Outline (pf) (TO-)

Remarks

2N3734

MO npn,AE,si

*250 4000

200 22.8 30

1500 *30-120 t0.2 *9

5

2N3735

MO npn,AE,si

*250 4000

200 22.8 50

1500 *20-80

t0.2 *9

5

2N3736

MO npn,AE,si

*250 2000

200 11.4 30

1500 *30-120 t0.2 *9

46

2N3737

MO npn,AE,si

*250 2000

200 11.4 50

1500 *20-80

t0.2 *9

46

·

2N3903 HF 64

MO npn,AE,si

*250 310

135 2.81 40

200

*50-150 t.05 *4

92

2N3905

MO pnp,AE,si

*250 310

135 2.81 40

200

*50-150 t.05 *4.5 92

2N3946

MO

npn,AE,si *250 1200

200 6.9 40

200

*50-150 t.01 *4

18

2N4123

MO npn,AE,si

*250 310

135 2.81 30

200

*50-150 .05

*4

92

2N4126

MO pnp,AE,si

*250 310

135 2.81 25

200

*120-360 .05

*4.5 92

2N930A

SSD npn,PL

*275 500

200 2.85 45

50

*150

.002 *6

18 AMP, AL

HF 65 HF 66 HF 67

2N 1492 2N2524 AF 109 FT4019 2N784
2N784/ 5l 2N784A 2N835 2N835/ 46 2N835 151
2N914.'46 2N914/ 51 2N915 2N963 2N967
2N988 2N989 2Nl493 2N2219A 2N2222 A
2N2318 2N2319 2N2320 2N2381 2N2382
2N2489 2N2795 2N2796 2N2885 2N2887

RCA npn,si SSD npn,PL SA pnp,MS,ge FA pnp,DPE,si SY rpn ,EP,si
SY npn, EP,si SY npn,EP,si MO npn,EP,si SY npn,PE,si SY npn,PE,si
SY npn,PE,si SY npn,PE,si FA npn, DP,si MO pnp,EM,ge MO pnp,EM,ge
TRWS npn,PL,si TRWS npn,PL,si RCA npn ,s1 MO npn,PE,si MO npn,AE,si
GI npn,si GI npn,si GI npn,si MO pnp,EM,ge MO pnp,EM,ge
SPR pnp,ED,ge SPR pnp,ED,ge SPR pnp,ED,ge TR npn,PL,si TRWS npn,PL,si

*275 3000

175 20

*60 50

*275 400

200 2.3 45

50

280 60

90 2.5 18

12

*280 1.1 w 200 .0062 45

200

300 300

175 -

*30 200

15-200

10

*5

39

*100

.002 *6

46

*100

1.0

-

18

*250-600 .010 -

-

*25-150 .25

3.5 18

300 300 300 360 *300 lW
*300 400 *300 300

175 -

*30 200

*25-150 .025 3.5 51

200 -

*40 200

*25-150 .025 3.5

18

175 6.67 *25 200

201-

0.5

4

18

200 -

*25 200

*20

0.5

*4

46

200 -

*25 200

*20

0.5

*4

51

*300 400

200 -

*40 -

*300 300

200 -

*40 -

*300 1200

200 6.9

50

-

*300 300 100 4

*12 -

*300 300

100 4

*12 -

·~0-120

.025

*6

46

*30-120 .025 6

51

*100

0.005 *3

18

·201-

5

*5

18

40/ -

5

*5

18

*300 1000 *300 1000 *300 3000 *300 3W *300 LBW

175 6.67 *20 220

175 6.67 *20 220

175 20

*100 50

175 20

40

800

175 12

40

-

*20-120 0.5

*20-120 0.5

15-200

10

100-300 0.01

*100-300 .01

*4

18

*3.5 18

*5

39

*8

5

*8

18

*300 360 *300 300 *300 600 *300 750 *300 750

175 2.0

15

-

*40

175 1.7

15

-

*40

175 3.4

15

-

*40

100 10

15

500

*40

100 10

20

500

*40

.050 *5

18

.050 *5

46

.050 *5

5

1

*3.5 5

1

*3.5 5

*300 60

100 0.8 *20 100

*20

2.5

3

18

*300 75

100 1

*25 100

*100

-

*2.5 18

*300 75

100 1

*20 100

"'60

-

*2.5 18

300 150

175 1

15

50

*30· 120 .025 *6

51

*300 25000 200 142.8 80

1200 *15"80

-

*30 -

age pre-stages Dual pnp FA
SY, GE, GI, ITT, SPR GI
GI
AMP, NA,AL SY I Tl , RCA SY, Tl , RCA
CT TR , SPR , TRWS Gl,.SPR, TR, NA, TRWS
STC STC STC

HF 68

2N3043 2N3249 2N3251 2N3281 2N32 82
2N3289 2N32 90 2N3307 2N3308 2N33 09

SPR npn, PE,si MO pnp,AE,si MO pnp,AE,si MO pnp,EM,ge MO pnp,EM,ge
MO npn,E,si MO npn, E,si MO pnp, EA,si MO npn,EA,si MO npn,E,si

*300 l.4W *300 l.2W *300 l.2W *300 100 *300 100
*300 300 *300 300 *300 300 *300 300 *300 3.5W

200 9.33 45

30

200 6.9

12

-

200 6.9 *50 200

100 1.33 15

50

100 1.33 15

50

200 1.71 15

50

200 1.71 15

50

200 1.71 35

50

200 1.71 25

50

175 23.3 *50 500

*100-300 0.01 *100-300 -
*100-300 -
*10-100 5 *10-100 5

*8

*8

18

*6

18

*1.2 18

*1.2 18

*10-200 *10-200
*40-250 *25-250 *5-100

0.010 *1.5 18

0.010 *1.5 18

0.010 *1.3 18

0.010 *1.3 18

0.5

*10 5

Flat Pack
AL AL

HF 69 HF 70

2N3854 2N3 854A 2N3904 2N3906 2N3947
2N4124 2N4264 2N4265 40 292 A467
ED-322 MM700 T1408 Tl409 2N503
2N779A 2N846A 2N 968 2N969 2N97 0

GE npn,PE,si GE npn,PEP,si MO npn,AE,si MO pnp,AE,si MO npn,AE,si
MO npn,AE,si MO npn,AE,si MO npn,AE,si RCA npn,si AMP npn,PL,si
SPR pnp,ge MO npn,AE,si Tl npn ,PL ,si Tl npn ,PL ,si *SPR pnp,MD,ge
*SPR pnp,MD,ge *SPR pnp,MD ,ge MO pnp,MO,ge MO pnp,MD ,ge MO pnp,MD, ge

*300 200 *300 200 *300 310 *300 310 *300 1200
*300 310 *300 310 *300 310 *300 23.2W *300 150
*300 75 *300 750 *300 200 *300 200 320 25
*320 60 *320 60 *320 300 *320 300 *320 300

100 2.67 100 2.67 135 2.81 135 2.81 200 6.9
135 2.81 135 2.81 135 2.81 200 132 175 1.0
100 1.0 200 4.3 125 2 125 2 85 0.5
100 0.8 100 0.8 100 4 100 4 100 4

18

100

*35-70

0.5

*2.5 98

30

100

*35-70

0.5

*2.5 98

40

200

*100-300 *.05 *4

92

40

200

*100-300 *.05 *4.5 92

40

200

*100-300 *.01 *4

18_

25

200

*120-360 .05

*4

92

15

200

*40 -160 tO.l *4

92

12

200

*1 00-400 tO.l *4

92

-

l.25A -

*250 *30 60 Vces=90; overlay type

*40 25

*60

.001 -

72 Cre =.015 pf

15

100

*50

-

*3

18 Hi Rel 2N2795

8

100

*15-120 .015 *3

52

12

30

*15

0.5

2.2

Plast IEC , GME

12

30

*15

0.5

2.2 -

Plast IEC , GME

*20 50

4.2

3

2

9

*PH orig. Reg.

*15 100

*90

1.0

*1.9 18 *PH orig Reg

*15 100

*50

1.0

*1.9 18 *PH, orig, Reg

*15 -

*35

3

*4

18

SY I Tl

*12 -

*35

3

*4

18 Tl

*12 -

*35

3

*4

18 Tl

--'

(see pages 4-9 for explanation of company abbreviations.)

May 17, 1966 .

47

~ igh- Frequency <continued)

Cross Index Key
HF 71
HF 72

Type No.
2N971 2N972 2N973 2N974 2N97S
2N2256 2N2257 2N2258 2N22S9 2N834/ 46
2N834/ 51 2N914
2N984 2N2170
2N2501 2N2845 2N2846 2N2847 2N2848

Mfr.

Type

MO pnp,MO,ge MO pnp,MO,ge MO pnp,MO,ge MO pnp,MO,ge MO pnp,MO,ge

MO npn,ME,si MO npn,ME,si MO pnp,ME,ge MO pnp,ME,ge SY npn, EP,si

SY npn,EP,si FA npn,PE,si

SPR pnp,MO,ge SPR pnp,MO,ge

MO npn,AE,si FA npn,PE,si
FA npn,PE,si FA npn,PE,si FA npn,PE,si

fae

*fr

p c

(MHz) (mW}

*320 300 *320 300 *320 300 *320 300 *320 300

·320 1000 *320 1000 *320 300 *320 300 *350 400

*350 300 *350 l.2W

*350 60 *350 60

*350 l.2W *350 l.2W
*350 3W
*350 1.2W *350 3W

MAX. RATINGS

v

T.

*VCEO

J

CBO IC

(oC) mW / °C (V) (mA)

100 4 100 4
100 4
100 4 100 4

*7

-

*15 -

·12 -

*12 -

·7 -

175 6.67 7

100

175 6.67 7

100

100 4

7

100

100 4

7

100

200 -

*40 200

200 -

*40 200

200 6.9

lS

-

100 0.8 *15 100 100 0.8 *15 100

200 6.9 20

-

200 6.9

30

-

200 17.2 30

-

200 6.9 20

-

200 17.2 20

-

CHARACTERISTICS

lco

hfe *hFE

*1cEO Coe t 1cEx *Cob
(µA) (pf)

Pockoge Outline
(TO-)

Remarks

*35

10

·4

18 Tl

*75

3

*4

18 Tl

*75

3

*4

18 Tl

*7S

3

·4

18 Tl

*75

10

*4

18 Tl

*30

3

*4

18 CL

·so

3

*4

18 CL

*30

3

·4

18

·so

3

*4

18

*25

0.5

4

46

GI, NA

*2S

0.5

4

51

*SS

0.004 *4.5 18 SY, MP, TR, GI, AMP, SPR, NUC,

MO

*70

1

*1.9 18

*70

1

·i.9 9

*50-150 *60 *60
*60 *60

-

*4

0.04 *6

0.04 *6

0.04 *6

0.04 *6

18 SY, GI, TR, ~R

18 SPR,NA

5

SPR, NA

18 SPR, NA

5

SPR, NA, RCA, NUC

HF 73

2N2894 2N2955 2N3009
2N3287 2N3288 2N3855 2N3855A 40282

HF 74

MPS834 2N741 2N741A 2N2487 2N2488
2N2956 2N3856A 2N3856 2N706 2N706B

HF 75

2N706C 2N707 2N708 2N828 £N828A
2N829 2N916 2N2096 2N2097 2N2099

HF 76

2N2100 2N29S7 2N2996 2N2997 2N3279
2N3280 2N3299 2N3300 2N3301 2N3302

HF 77

2N3327 2N3337 2N3338 2N3339 2N3371
2N3632

2N3688 2N3689 2N3690

48

FA pnp,PE,si MO pnp, EM,ge FA npn, PE, si
MO npn, E,si MO npn, E,si GE npn,PE,si GE npn,PEP,si RCA npn,si
MO npn,EP,si MO pnp,OM,ge MO pnp,OM,ge SPR pnp,ED,ge SPR pnp, ED,g~
MO pnp,EM,ge GE npn,PEP,si GE npn,PE,si FA npn,00,si MO npn,EP,si
FA npn,00,si FA npn,00,si FA npn,OP ,si MO pnp, EM,ge MO pnp,EM,ge
MO pnµ,EM,ge FA npn,OP,si
pnp,EO,ge pnp,ED,ge pnp,ED,ge
pnp,EO,ge MO pnp,EM,ge Tl pnp,ge Tl pnp,ge MO pnp, EM,ge
MO pnp, EM,ge FA npn,PE,si FA npn,PE,si FA npn,PE,si FA npn,PE,si
NSC npn FA npn,PE,si FA npn,PE,si FA npn,PE,si Tl pnp,ge
RCA npn ,si
FA npn,PL,si FA npn,PL,si FA npn,PL,si

*350 l.2W *350 300 *350 1200
*350 300 *350 300 *350 200 *350 200 *350 23.2W
*350 500 *360 300 *360 300 *360 60 *360 60
*37S 300 *375 200 *375 200 *400 LOW *400 lW
*400 l.2W 400 l.OW *400 l,2W *400 300 *400 300
*400 300 *400 1200 *400 750 *400 750 *400 750
*400 750 *400 300 *400 7S *400 7S *400 100
*400 100 *400 3W *400 3W *400 1.BW *400 LBW
400 20W *400 500 *400 500 *400 soo "'400 lSO
*400 23W
*400 soo 400 500 400 soo

200 6.85 100 4 200 6.85
200 1.71 200 1.71 100 2.67 100 2.67 200 015
12S s 100 2 100 2 100 0.8 100 0.8
100 4 100 2.67 100 2.67 l 7S 6.7 175 6-7
200 6.9 175 6.7 200 6.9 100 .4 100 4
100 4 200 6.9 100 10 100 10 100 10
100 10 100 4 100 1 100 1 100 1.33
100 1.33 200 17.2 200 17.2 200 10.3 200 10.3
200 134 200 2.86 200 2.86 200 2.86 100 2
200 130
12S s 125 5 12S s

12

-

*75

5

*40 100 *20/60

-

*40 200

*15

-

*3.3 18 Tl

*2.5 18

*5

52

20

50

*15-150 0.010 *1.1 18

20

50

'15-150 0.010 *1.5 18

18

100

*60-120 0.5

*2.5 98

30

100

*60-120 0.5

*2.5 98

18

2a

-

· 250 *4S 6'0

30

200

*2S

*lS 100

*2S

*20 100

*2S

*lS 100

*20

*lS 100

*20

0.S

*4

92

.2

*6

18 SY, Tl

.2

*6

18 SY, Tl

3

*3

18

3

3

18

*40 100

30

100

18

100

*25 -

*2S -

*40-120 10

·2.s 18

*100-200 o.s

*2.S 98

*100-200 o.s

*2.5 98

*4S

o.oos *5

18

·20.so

0.005 *S

18

SY, MO, TR, GI, AMP, SPR, ITI FA, SY, GI, TR, ITT

lS

so

*40

*56 -

*12

15

-

·so

*15 200

40

*15 200

*40

0.010 *4

18

0.005 ·s

18

0.004 *4

18

.4

*3.5 18

0.4

*2.2 18

GI, TR TRWS, MO, GI FA, SY, MO, TR, GI, AMP, RCA SY, Tl, RCA, LAN
Tl

*15 200

*80

25 -

*100

*25 500

*40

*40 500

*70

*25 500

*40

0.4

*2.2 18

0.005 *5

18

6

*15 31

6

*15 31

6

*15 9

Tl TRWS, AMP, NA, MO MO MO MO

*40 500

*70

6

*40 100

*100

-

*lS so

35

s

*30 so

so

5

20

so

*10-70

s

*15 9

MO

*2.5 18

"'3

72

*1.8 72

*1.0 18

20

so

30 -

30 -

30 -

30 -

*10-70
*7S *220
*75 *220

s

*1.2 18

0.0002 *6.0 5

0.0002 *6.0 5

0.0002 *6.0 18

0.0002 *6.0 18

65

2.0a *10

40 -

*30

40 -

*30

40 -

*30

*2S 100

25-SOO

SOOmA *30 60

0.025 0.025

"'1.6 *1.6

--

0.02S *1.6 -

7

·4

18

40

3A

-

40

4

30-70

40

4

30-70

40

4

30-70

2SO

*20 60 RCA "Overlay" emitter type,

MO, VEG

5

1.1

-

ROllO package

s s

1.1 1.1

--

ROllO package ROllO package

(see pages 4.9 for explanation of company abbreviations.)

ON READER-SERVICE CARD CIRCLE 16 ~

GENERAL INSTRUMENT SEMICONDUCTORS
CONDENSED CATAlOG I 1988

INTRODUCTION
From the simplest diode ···
to the most complex Microelectronics array
... That, in a few words, is an apt description of Generar Instrument's Semiconductor line. But it is by no means complete, because this line is characterized by several far-reaching technical developments which · have had a profound effect on many segments of the electronic industry.
Two such developments are depicted on the cover of this publication: The enormously complex MOS array, for example, represents previously unimagined opportunity for the computer manufacturer. The idea of an entire computer on a single 80-by 58 mil chip is already entirely feasible. You'll find MOS arrays and field effect transistors listed on Page 4.
And, at the other end of the semiconductor spectrum, the simple diode has undergone an amazing evolution. The recent General Instrument announcement of the HERCULEADST.M. Beam-Lead Diode (listed on Page 10) has ushered in a new era in processing discrete semiconductors.
No bigger in its entirety than a typewriter period (it takes 4 million to make a pound), the HERCULEADS diode is practically indestructible - it can withstand impact shocks of 200,000 G's; is immune to the metallurgical "diseases" that plague conventional devices; and is completely "passivated" in the production process, so that it needs no hermetically sealed container to protect it from environmental effects.
These are just two of many technical achievements you'll find incorporated in General Instrument's semiconductor line. Glass-Amp® Rectifiers and Zener Diodes; Hybrid Micro-circuits; a new line of low-cost epoxypackaged silicon transistors - they're all listed on the following pages in an easy-to-use format. Also, you'll find the numerical index beginning on Page 22 an additional convenience.
And it goes without saying, of course, that service from any of the General Instrument sales offices or authorized distributors throughout the country is no further away than your telephone.
2

CONTENTS

PAGE
(~~-N_T_R_o~D_u_c_T_1_o_N~~-----)

PRODUCTS
MOS SEMICONDUCTORS
MOS MICROCIRCUIT ARRAYS MOS FIELD EFFECT TRANSISTORS
HYBRID MICROCIRCUITS
HIGH SPEED DIGITAL MICROCIRCUITS MULTICHIP ANALOG CIRCUITS
SILICON RECTIFIERS
Glass-Amp® SILICON RECTIFIERS
SILICON RECTIFIERS & DIODES
SILICON DIODES
HERCULEADSTM BEAM-LEAD DIODES
ZENER VOLTAGE REGULATOR DIODES
GERMANIUM TRANSISTORS SILICON TRANSISTORS EPOXY ENCAPSULATED
SILICON TRANSISTORS GERMANIUM DIODES SOLID STATE ASSEMBLIES SELENIUM RECTIFIER ASSEMBLIES

(NUMERICAL INDEX )

~~~ ::·~ ,, .:V ~':'Jr- ~. --- --r·. '.

(CASE DRAWINGS

)

~~k;~~u,,L.~...

SALES OFFICES AND AUTHORIZED DISTRIBUTORS

3

MOS MICROCIRCUIT ARRAYS (TA = -55°C to + 85°C)

TYPE

FUNCTION

CASE

FUNCTION DIAGRAM FIG. NO.

POWER CONSUMPTION
(mW)

SUPPLY VOLTAGE (VOLTS)

SHIFT PULSE FREQUENCY
(kHz)

INPUT
CAPACITANCE (pf)

OUTPUT IMPEDANCE
(Kfl)

SHIFT REGISTER, FLIP-FLOP CIRCUITS

1MEM 3021 21-Bit de, l <t> clock

1

1

2MEM 3020 20-Bit Dynamic, 2</J clock

1

2

3MEM 1005 RST Flip-Flop

3

< 200

-28 :±:5%

de to 500

2

< 200

-26 :±:5%

de to 1 Mc

2

< 80

-28 :±:5%

de to 1 Mc

2

1 Formerly MEM 501. 2 Formerly MEM 521. 3 Formerly MEM 529.

<2 <2 { 2@ "O"
10@ "1"

LOGIC CIRCUITS

1MEM1002 MEM 1000

Dual 3-lnput NOR-Gate Dual Full Adder

1 Formerly M EM 522.

1

4

7

5

PROPAGATION
DELAY (nsec)

CAPACITANCE (pf)

FREQUENCY (kHz)

30

-26 :±:5%

500

25

-12 & 26 :±:5%

500

3.0

de to 500

3.0

de to 500

SERIES SHUNT CHOPPER

[ 1MEM 2008

Integrated Series Shunt Chopper Circuit (See Fig. 6)

1 Formerly MEM 590.

MULTIPLEXER CIRCUITS

OFFSET VOLTAGE

CLOCK </J

FRE·
QUENCY (kHz)

SERIES SHUNT RESISTANCE RESISTANCE RATIO (TYP)

ON RESISTANCE PER UNIT (SERIES OR SHUNT) (!1 TYP)

OFF RESISTANCE PER UNIT (SERIES OR SHUNT) (fl TYP)

SIGNAL VOLTAGE HANDLING RANGE (TYP)

4

0

1

100

200 DB

6x10+3

1013

lµ,V up to lOV

J l J l l CASE

OFF RESISTANCE ON RESISTANCE CAPACITANCE

(0 TYP)

(!J TYP)

(pf) Cgd

] BVoss
(VOLTS)

BVGSS (VOLTS)

1MEM 2001 MEM 2002 MEM 2003 MEM 2004
MEM 2004A MEM 2005 MEM 2006 MEM 2007

See circuit diagram No. 7 See circuit diagram No. 8 See circuit diagram No. 9 See circuit diagram No. 9
See circuit diagram No. 9 See circuit diagram No. 10 See circuit diagram No. 11 See circuit diagram No. 11

7

1011

500

7

1011

500

8

1011

500

8

1011

250

8

1011

250

7

1011

500

8

1011

500

8

1011

250

1.1

-30

-25

1.1

-30

-25

1.1

-30

-25

1.5

-30

:±:40

1.5

-30

-25

1.1

-30

-25

1.1

-30

-25

1.5

-30

-25

1MEM 2001 thru MEM 2007 formerly MEM 5001 thru MEM 5007

MOS SILICON P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORS (TA = 25°C, body grounded)

TYPE

CASE

VGST

(VOLTS)

MAX.

MIN.

lo (ON) (mA TYP)

loss (nA TYP)

IGSS (nA TYP)

BVoss (VOLTS)

BVoss (VOLTS)

Yt s (µ.mho TYP)

Cgd (pf TYP)

ms ON (fl TYP)

MEM 511 MEM 517 MEM 517A MEM 5178
MEM 520 MEM 550 MEM 551

10

-3

-6

-6

.2

5

-2.5 -5

-60

.8

6

-2.5 -5

-60

.8

10

-2.5 -5

-60

.8

10

-3

-6

-6

.2

2

-3

-6

-3

.2

13

-3

-6

-3

.2

.05 .05 .05 .05
.001 .05 .001

-40 -30 -30 -30
-30 -30 -30

-30 -25 -25 -25
:±:40 -25 :±:40

2500 12000 12000 12000
2500 2500 2500

1.5

250

10

45

16

45

10

45

1.5

250

1.1

500

1.1

500

FUNCTION DIAGRAMS
</> -Vs -Vo

</> </> Vs

IN

OUT

IN

OUT I N O BITS O OUT

IN

OUT

\..

MEM 302

~

FIGURE 2

DIRECT SET

'B'CL~CK-

_

R

Q

/

""'I

BA ,, ~

C,

OUTPUT ,

BA,,~

C,

OUTPUT,

DIRECT RESET MEM 1005

MEM1002 ~

FIGURE 3

FIGURE 4

""'I

'8'' :,~: -Vs -V.

B,

C,

C,

A,

S,

c8,1

C,

\..MEM 1000 FIGURE 5

MEM 2008 ~
FIGURE 6

MULTIPLEXER CIRCUIT
DIAGRAMS ...

FIGURE 7

MEM 2001

9 6 10 5 11 4 12 3

13 2

:~MJLiJYt ~

FIGURE 8

MEM 2002

MEM 2003, MEM 2004, AND MEM 2004A FIGURE 9

9 6 10 5

11 4 12 3

~~

\..'-~~~~M~E~M~2~00~5~~~~---'~ \..'-M~EM~2~00~6~AN~D~M~E~M ~20~07~~~-'

FIGURE 10

FIGURE 11

4

SEE PAGE 24 FOR CASE DRAWINGS

HYBRID MICROCIRCUITS

AMPLIFIERS

TYPE* (TA= 250C) NC/PC-101 PC-200 PC·201
PC-210 PC-212 PC-250
PC-251

FUNCTION

CASE

Voltage
Gain (db)

NANOCI RCUIT VIDEO AMPLIFIER

22&23 20

OPERATIONAL AMPLIFIER

24

73

GENERAL PURPOSE

OPERATIONAL AMPLIFIER

25

73

HIGH COMMON- MODE

REJECTION

OPERATIONAL AMPLIFIER

32

70

LOW NOISE, WIDE B.W., H.V.

OPERATIONAL AMPLIFIER

32

64

LOW NOISE, WIDE B.W.

OPERATIONAL AMPLIFIER

26

50

ULTRA-HIGH (MOS)

INPUT IMPEDANCE

OPERATIONAL AMPLIFIER

26

50

ULTRA-HIGH (MOS)

INPUT IMPEDANCE

SHORT CIRCUIT PROOF

Input Impedance (K ohms)
1.2 100 200
90 100 1014(ohms)
1014(ohms)

Input Offset Voltage (mV)
-
1 1
3 3 50
50

Offset Voltage
Drift (µ,V/°C)
-
5
5
4
4
500
500

CommonMode
Rejection (db)
-
80
100
80
80
42
42

Input Broadband
Noise (µ,Vrms)
10
5
5
4
4
-
-

Band Width (KHz) 20,000
15 15
l,500 l,200
30
30

Supply Voltages
(Vdc) +6 ±12 ±12
±18 ±12 ±12
±12

Temp.
Raoncge
-55 to +125 -55 to +125 -55 to+125
-55to +125 -55 to +125 -55to +85
-55 to+85

TYPE* (TA= 25°C)

FUNCTION

CASE

Output Voltage
(Vdc)

POWER SUPPLY VOLTAGE REGULATORS**

PC-501 PC-503
PC-502 PC-504
NC/PC·511 NC/PC-513
PC-512 PC-514
PC-521 PC-523
tNCS-675A

12 V OVERLOAD PROTECTION
24 V OVERLOAD PROTECTION
12 V GENERAL PURPOSE APPLICATION
24 V GENERAL PURPOSE APPLICATION
6 V GENERAL PURPOSE APPLICATION
t5 V GENERAL PURPOSE APPLICATION

18 18
18 18
19 & 20 19 & 20
20 20
21 21

+12V -12V +24V -24V +12V -12V +24V -24V
+6V -6V

14

+sv

Load Regulation
%
.025 .025 .05 .05 .025 .025 .05 .05 .07 .07
.04

Line Regulation
%
0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.4 0.4
0.5

Ripple Rejection µ,out/ µ,in
.03 .03 .06 .06 .03 .03 .06 .06 .04 .04
-

Output Impedance
ohms
0.1 0.1 0.2 0.2 0.1 0.1 0.2 0.2
.05 .05
.005

Temp. Coefficient
mV/°C

Power Dissipation
2s 0c
(mW)

Temp.
Raoncge

0.3

500

-55 to+125

0.3

500

-55 to+125

1.5

500

-55to +125

1.5

500

-55 to+125

0.3

500

-55 to+125

0.3

500

-55 to+125

1.5

500

-55 to +125

1.5

500

-55 to +125

0.3

500

-55 to +125

0.3

500

-55 to +125

5

500

-55 to +125

HIGH VOLTAGE ANALOG SWITCHES

TYPE (TA= 25°C)
PC-401 PC-402

FUNCTION
S~NGLE INPUT COMPLEMENTARY INPUT

CASE
12 13

Turn On Time (nsec)
50 50

Turn Off Time (nsec)
200 200

Offset Voltage
(mV)
20 20

Turn On Voltage (Volts)
3 3

Repetition Rate (KHZ)
200 200

Maximum Supply Voltage (Volts)
+so +so

Maximum Analog Voltage (Volts)
+35 +35

Overshoot Voltage (Volts)
2.5 2.5

I HIGH-SPEED DIGITAL MULTICHIP MICROCIRCUITS

TEMPERATURE RANGE-55°C to +125°C

PROPAGATION} POWER

FANOUT

DELAY@ 25°C DISSIPATION

(EACH

TYPE*

FUNCTION

CASE (nsec TYP) (mW TYP)

OUTPUT)

BINARY CIRCUITS

NC-8, PC-8 NC-9, PC-9
PC·13

FLIP-FLOP STEERING GATE RST FLIP-FLOP

14 & 11 15 & 27
16

200

3 NORS

and/or

200

5 NANDS

SUPPLY VOLTAGE (VOLTS)
Vee
+12V +12V +12V

CLAMP
VOLTAGE (VOLTS)
VcL

MAXIMUM
REPETITION
RATE (MHZ)

LOGIC
LEVELS (VOLTS)

+4.2V +4.2V +4.2V

20

+.3V, +5V

20

+.3V, +sv

20

+.3V, +5V

NOR-GATES
NC-10 PC-10 PC-14

SINGLE 4-INPUT SINGLE 6-INPUT DUAL 3-INPUT

17

8

170

4 NORS

+12V

+4.2V

12

+.3V, +sv

16

8

170

and/or

+12V

+4.2V

12

+.3V, +sv

16

8

170

5 NANDS

+12V

+4.2V

12

+.3V, +sv

NA ND-GATES

NC-11 PC-11 PC-15

SINGLE 4-INPUT SINGLE 6-INPUT DUAL 3-INPUT

17

8

16

8

16

8

60

4NORS

60

and/or

60

5 NANDS

+12V +12V +12V

+4.2V +4.2V +4.2V

15

+.3v, +sv

15

+.3V, +sv

15

+ .3V, +sv

DELAY CIRCUITS

NC·16, PC-16 SINGLE SHOT

PC-18

TRIGGERED SINGLE SHOT

14 & 29 30

200 200

3 NORS
and/or 5 NANDS

+12V +12V

+4.2V +4.2V

101

+.3V, +sv

101

+.3V, +sv

TRIGGER CIRCUITS
NC-17, PC-17 SCHMITT TRIGGER

14 & 31

3 NORS

200

and/or

+12V

5 NANDS

+4.2V

5

+.3V, +sv

BUFFER AMPLIFIER
NC-12, PC-12 NON-INVERTING AMPLIFIER 15 & 28

200

120mA@.3V 70mA@5V2

+12V

+4.2V

12

+.3V, +sv

CUSTOM CIRCUITS: Complete facilities available to meet your special requirements.

* PC prefix indicates flat packs; NC indicates T0-5 package.

t Specified with external pass transistor with 3 amp load.

**These units are self-contained voltage regulators and with an external pass transistor can regulate leads up to 10 amperes.

NOTE: 1 60% maximum duty cycle.

2With external 100 ohm resistor.

SEE PAGE 24 AND 25 FOR CASE DRAWINGS

5

SILICON RECTIFIERS

TOP HAT TYPE RECTIFIERS

TYPE

PRY VOLTS

1N440 1 N440B 1 N441 1 N441 B 1N442
1 N442B 1N443 1N443B 1N444 1 N444B
1N445 1 N445B 1N530 1 N531 1 N532
1N533 1N534 1N535 1 N536 1 N537
1 N538 1N539 1-1 N540 1 N547 1-1 N560
1 N561 1 N599 1 N599A 1 N600 1 N600A
1 N601 1 N601A 1N602 1 N602A 1N603
1 N603A 1N604 1 N604A 1N605 1 N605A
1 N606 1 N606A 1N1095 1N1097 1N1100
1N1101 1N1102 1N1103 1N1104 1Nl105
1 N1169 1N1692 1N1693 1N1694 1N1695
1N1696 1N1697 1N1763 1N1764 PT505
PT510 PT515 PT520 PT525 PT530
PT540 PT550 PT560 PT580 591
591H 592 592H 593 593H

100 100 200 200 300
300 400 400 500 500
600 600 100 200 300
400 500 600
50 100
200 300 400 600 800
1000 50 50
100 100
150 150 200 200 300
300 400 400 500 500
600 600 500 600 100
200 300 400 500 600
400 100 200 300 400
500 600 400 500
50
100 150 200 250 300
400 500 600 800 100
100 200 200 300 300

·Indicates MIL Type

MAXIMUM AVERAGE
RECTIFIED CURRENT
V2 WAVE, RES. LOAD 60 Hz

AAV@ TA
I mA oc

300

50

750

50

300

50

750

50

300

50

750

50

300

50

750

50

300

50

650

50

300

50

650

50

300

100

300

100

300

100

300

100

300

100

300

100

250

150

250

150

250

150

250

150

250

150

250

150

500

100

500

100

300

100

300

100

300

100

300

100

300

100

300

100

300

100

300

100

300

100

300

100

300

100

300

100

300

100

300

100

300

100

300

100

250

135

250

130

250

150

250

150

250

150

250

150

250

150

250

150

300

100

250

ll'.lo

250

100

250

100

250

100

250

100

250

100

500

75

500

75

1000

100

1000

100

1000

100

1000

100

1000

100

1000

100

1000

100

1000

100

1000

100

1000

50

200

85

250

85

200

85

250

85

200

85

250

85

OPERATIONAL TEMP. RANGE

I MoIcN

MoAc X

-55

150

-55

165

-55

150

-55

165

-55

150

-55

165

-55

150

-55

165

-55

150

-55

150

-55

150

-55

150

-55

100

-55

100

-55

100

-55

100

-55

100

-55

100

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-55

175

-55

175

-55

150

-55

150

-55

150

-55

150

-55

150

-55

150

-55

150

-55

150

-55

150

-55

150

-55

150

-55

150

-55

150

-55

150

-55

150

-55

150

-65

175

-65

175

-55

150

-55

150

-55

150

-55

150

-55

150

-55

150

-55

100

-55

115

-55

115

-55

115

-55

115

-55

115

-55

115

-65

100

-65

100

-55

125

-55

125

-55

125

-55

125

-55

125

-55

125

-55

125

-55

125

-55

125

-55

125

-55

185

-55

125

-55

185

-55

125

-55

185

-55

125

STORAGE TEMP. RANGE

l MoIcN

MoAc X

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

180

-55

180

-55

180

-55

180

-55

180

-55

180

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

175

-65

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-65

200

-65

200

-55

180

-55

180

-55

180

-55

180

-55

180

-55

180

-55

180

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-65

100

-65

100

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

100

-55

150

-55

100

-55

150

-55

100

-55

150

MAXIMUM FORWARD PEAK SURGE CURRENT
1,_,, 60 Hz SUPERIMPOSED
APK
15 15 15 15 15
15 15 15 15 15
15 15 1.5 1.5 1.5
1.5 1.5 1.5 15 15
15 15 15 15 25
25 2 2 2 2
2 2 2 2 2
2 2 2 2 2
2 2 15 15 15
15 15 15 15 15
35 20 20 20 20
20 20 35 35 15
50 50 50 50 50
50 50 50 50
5
5 5 5 5 5

MAXIMUM FORWARD VOLTAGE @TA 25°C
AMB

lVF

IF

Voe

mAoc

1.5

300

1.5

750

1.5

300

1.5

750

1.5

300

1.5

750

1.5

300

1.5

750

1.5

300

1.5

650

1.5

300

1.5

650

2.0

300

2.0

300

2.0

300

2.0

300

2.0

300

2.0

300

1.1

500

1.1

500

1.1

500

1.1

500

1.1

500

1.1

500

1.1

500

1.1

500

1.5

300

1.5

300

1.5

300

1.5

300

1.5

300

1.5

300

1.5

300

1.5

300

1.5

300

1.5

300

1.5

300

1.5

300

1.5

300

1.5

300

1.5

300

1.5

300

1.1

500

1.1

500

1.2

750

1.2

750

1.2

750

1.2

750

1.2

750

1.2

750

1

300

0.6

250

0.6

250

0.6

250

0.6

250

0.6

250

0.6

250

1

500

1

500

1.5

500

1.5

500

1.5

500

1.5

500

1.5

500

1.5

500

1.5

500

1.5

500

1.5

500

1.5

500

1.5

200

1.5

250

1.5

200

1.5

250

1.5

200

1.5

250

CASE 33

MAXIMUM REVERSE CURRENT
@RATED DC BLOCKING VOLTAGE
@ 25°C AMB

l YR

IR

Voe

µ.ADC

100

0.30

100

0.30

200

0.75

200

0.75

300

1.0

300

1.0

400

1.5

400

1.5

500

1.75

500

1.75

600

2.0

600

2.0

100

3.0

200

7.5

300

10.0

400

15.0

500

17.5

600

20.0

50

10

100

10

200

10

300

10

400

10

600

10

800

5

1000

5

50

2.5

50

1.0

100

2.5

100

1.0

150

2.5

150

1.0

200

2.5

200

1.0

300

2.5

300

1.0

400

2.5

400

1.0

500

2.5

500

1.0

600

2.5

600

1.0

500

10

600

10

100

0.1

200

0.1

300

0.1

400

0.1

500

0.1

600

0.1

400

100

100

500

200

500

300

500

400

500

500

500

600

500

400

10

500

10

50

10

100

10

150

10

200

10

250

10

300

10

400

10

500

10

600

10

800

10

100

10

100

10

200

10

200

10

300

10

300

10

6

SEE PAGE 25 FOR CASE DRAWINGS

Glass-Amp® SILICON RECTIFIERS

Glass-Amp® RECTIFIERS

TYPE NUMBER
G100B 1 N4383 1 N4384 1 N4385 1 N4585
1 N4586 1 N4250 1 N4251 1 N4252 1 N4253
1 N4254 1 N4255 1 N4256 1 N4257 DG1 OOJ
DG100K DG100M KG100F KG100G KG100H

MAXIMUM AVERAGE

RECTIFIED CURRENT V2WAVE, RES. LOAD

60 Hz

PRV VOLTS

AAV@ TA
mA l oc

OPERATIONAL TEMP.
lRANGE
MocIN MoAcX

100 1000 100 200 1000 100 400 1000 100 600 1000 100 800 600 100

-65 175 -65 175 -65 175 -65 175 -65 175

1000 600 100

800 500

55

1000 500

55

1200 500

55

1500 500

55

-65 175 -65 160 -65 160 -65 160 -65 160

1500 250

55

2000 250

55

2500 250

55

3000 250

55

1200 250 100

-65 160 -65 160 -65 160 -65 160 -55 150

1600 2000 3000 4000 5000

250 100

250 100

150

50

150

50

150

50

-55 150 -55 150 -55 150 -55 150 -55 150

STORAGE TEMP. RANGE
lMoIcN MoAcX
-65 175 -65 175 -65 175 -65 175 -65 175
-65 175 -65 200 -65 200 -65 200 -65 200
-65 200 -65 200 -65 200 -65 200 -55 175
-55 175 -55 175 -55 175 -55 175 -55 175

·Indicates MIL Type

MAXIMUM FORWARD PEAK SURGE CURRENT 1-, 60 Hz SUPERIMPOSED
APK
50 50 50 50 50 50 10 10 10 10
6.25 6.25 6.25 6.25 30 30 30 20 20 20

MAXIMUM

FORWARD

lVOTALT2AsG0 Ec@

VF Voe

mAIFoc

1.0 1000 1.0 1000 1.0 1000 1.0 1000 1.0 1000 1.0 1000 2.0 500 2.0 500 2.0 500 2.0 500 4.8 250 4.8 250 4.8 250 4.8 250 2.0 500 2.0 500 2.0 500 5.0 500 5.0 500 5.0 500

MAXIMUM

REVERSE

CURRENT@

RATED DC

BLOCKING

I2VsO0LcTAAGMEB

VR Voe

mIAR oc

100 10 200 10 400 10 600 10 800 10

1000 10 800 10 1000 10 1200 10 1500 10

1500 10

2000 10

2500 10

3000 10

1200

5

1600 5

2000

5

3000

5

4000

5

5000

5

MAXIMUM REVERSE RECOVERY
@ 2s0 c
AMB
IREF.
NOTE µ,$

-
---
-

---
-

-
--

---

-
-

--

---
-
-

-----

-

-

-

-

--

-

-
-

CASE 38

TYPICAL JUNCTION CAPACITANCE
@ 2s0 c
*INDICATES MAX

VR CJ Voe pF

-
-
--
-

-----

-----

-----

--

-
-

--

-- --

--

-
---

----

Glass-Amp® FAST RECOVERY RECTIFIERS

1 N5055

100

1.0

50 -55 125 -55 175

30

1 N5056

200

1.0

50 -55 125 -55 175

30

1 N5057

400

0.7

50 -55 125 -55 175

30

1 N5058

600

0.7

50 -55 125 -55 175

30

CASE 38

1.3 1000 100

5

1

.2 -4 35

1.3 1000 200

5

1

.2 -4 35

1.3 1000 400

5

1

.4 -4 23

1.3 1000 600

5

1

.8 -4 23

IGlass-Amp® CONTROLLED AVALANCHE RECTIFIERS

AAGG110000GD

200 1000 400 1000

50 50

-55 175 -55 175 -55 175 -55 175

50 50

AG100J

600 1000

50

-55 175 -55 175

50

FLANGELESS RECTIFIERS

1N2610

100 750

50

-65 175 -65 175

30

1 N2611

200 750

50

-65 175 -65 175

30

1 N2612

300 750

50

-65 175 -65 175

30

1 N2613

400 750

50

-65 175 -65 175

30

1 N2614

500 750

50

-65 175 -65 175

30

1 N2615

600 750

50

-65 175 -65 175

30

1 N2616

800 750

50

-65 175 -65 175

30

1 N2617

1000 750

50

-65 175 -65 175

30

·1N3189

200 1000 100

-65 175 -65 175

30

·1 N3190

400 1000 100

-65 175 -65 175

30

·1 N3191

600 1000 100

-65 175 -65 175

30

PLASTIC RECTIFIERS

1 N2069

200 500 100

-65 100 -65 125

22

1 N2070

400 500 100

-65 100 -65 125

22

1 N2071 PA300 PA305

600 1000
50

500 100

500

50

500

50

-65 100 -65 125 -65 125 -65 150 -65 125 -65 150

22 15 15

PA310 PA315 PA320 PA325 PA330

100 500

50

-65 125 -65 150

150 500 200 500 250 500 300 500

50 50 50 50

-65 125 -65 150 -65 125 -65 150 -65 125 -65 150 -65 125 -65 150

15 15 15 15 15

PA340 PA350 PA380

400 500 500 500 800 500

50 50 50

-65 125 -65 150 -65 125 -65 150 -65 125 -65 150

15 15 15

Note: 1. When switched from 1 ampere forward current to -30 volts.

CASE 38

1 1000 200 1 1000 400 1 1000 600

AVALANCHE BREAKDOWN
VOLTAGE
lRANGE
Mf MvIN

MAXIMUM 1011.s PULSE
AVALANCHE POWER WATTS

5

500 240

700

5

750 450

700

5 1000 675

700

1.0 750 1.0 750 1.0 750 1.0 750 1.0 750

100 10 200 10 300 10 400 10 500 10

---

-
-
--
-

1.0 750 600 10

-

-

1.0 750 800 10 1.0 750 1000 10

-
-

--

1.0 750 200

5

-

-

1.0 750 400

5

1.0 750 600

5

-
-

-

CASE 36

----

----

--

-

-

--

-

-

-
-
-

-
-
-

1.2 500 200 10

-

-

1.2 500 400 10 1.2 500 600 10 1.5 500 1000 10

--

--
-

1.5 500

50 10

-

-

1.5 500 1.5 500 1.5 500 1.5 500

100 10 150 10 200 10 250 10

-

-
--

1.5 500 300 10

-

-

1.5 500 400 10 1.5 500 500 10 1.5 500 800 10

-
-
-

-
-
-

CASE 37

--

-

-

-
-

-
-

-

-

---

-
-

--

-
-

-
-

---

SEE PAGE 25 FOR CASE DRAWINGS

7

SILICON RECTIFIERS AND DIODES

STUD TYPE RECTIFIERS

TYPE
·1N253 ·1 N254 ·1 N255 ·1 N256 1 N332
1 N333 1N334 1N335 1N336 1N337
1 N338 1N339 1N340 1N341 1N342
1 N343 1N344 1 N345 1N346 1N347
1N348 1N349 1N562 1 N563 1 N2026
1 N2027 1 N2028 1 N2029 1 N2030 1 N2031

PRY VOLTS
100 200 400 600 400
400 300 300 200 200
100 100 100 400 400
300 300 200 200 100
100 100 800 1000
50
200 300 400 500 600

MAXIMUM AVERAGE RECTIFIED CURRENT
1/2WAVE, RES. LOAD 60 Hz

AAv 0 Tc

l mA

oc

1000

135

400

135

400

135

200

135

400

150

200

150

400

150

200

150

400

150

200

150

70

150

400

150

200

150

400

150

200

150

400

150

200

150

400

150

200

150

70

150

400 200 400 400 1000

150 150 25AMB 25 AMB 150

1000

150

1000

150

1000

150

1000

150

1000

150

OPERATIONAL TEMP. RANGE

I MoIcN

MoAc X

-55

150

-55

150

-55

150

-55

150

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-65

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-65

175

-55

175

-55

175

-55

150

-55

150

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

STORAGE
TEMP. RANGE

l MoIcN

MoAc X

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-65

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-55

175

-65

175

-55

175

-55

175

-55

175

-55

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

MAXIMUM FORWARD PEAK SURGE CURRENT
1,_,, 60 Hz SUPERIMPOSED
APK
4.0 1.5 1.5 1.0 2.5
1.5 2.5 1.5 2.5 1.5
6.0 2.5 1.5 2.5 1.5
2.5 1.5 2.5 1.5 6.0
2.5 1.5 1.5 1.5 25
25 25 25 25 25

MAXIMUM FORWARD VOLTAGE
@TA 2s0 c
AMB

l VF

IF

Voe

mAoc

1.5
1.5 1.5 2.0 1.25

1000 500 500 500 400

2.0

200

1.25

400

2.0

200

1.25

400

2.0

200

2.0
1.25 2.0 1.25 2.0

2000 400 200 400 200

1.25 2.0 1.25 2.0 2.0

400 200
400 200 2000

1.25
2.0 1.3
1.3 2.0

400 200
400
400 2000

2.0

2000

2.0

2000

2.0

2000

2.0

2000

2.0

2000

CASE 34

MAXIMUM REVERSE CURRENT
@RATED DC BLOCKING VOLTAGE
@ 2s0 c AMB

l YR

IR

Voe

µ,Aoc

175

10

150

10

350

10

500

20

400

10

400

10

500

10

300

10

200

10

200

10

100

10

100

10

100

10

400

10

400

10

300

10

300

10

200

10

200

10

100

10

100

10

100

10

800

1.5

1000

2.0

50

10

200

10

300

10

400

10

500

10

600

10

GLASS DIODES

TYPE
1 N456 1 N456A ·1N457 1 N457A ·1N458
1 N458A ·1 N459 1 N459A 1 N461 1 N461A
1 N462 1 N462A 1 N463 1 N463A 1N464
1 N464A 1N482 1 N482A 1 N4828 1 N483
1 N483A ·1 N483B 1N484 1 N484A 1 N484B
1N485 1 N485A ·1 N485B 1 N486 1 N486A ·1 N486B

PRY VOLTS
25 25 60 60 125
125 175 175
25 25
60 60 175 175 125
125 36 36 36 70
70 70 136 130 130
180 180 180 225 225 225

MAXIMUM AVERAGE RECTIFIED CURRENT 1/2WAVE, RES. LOAD
60 Hz

AAV@ TA

I mA

oc

40

150

70

150

33

150

70

150

25

150

70

150

18

150

70

150

27

150

70

150

22

150

70

150

13.5

150

70

150

18

150

70

150

100

25

200

25

200

25

100

25

200

25

200

25

100

25

200

25

200

25

100

25

200

25

200

25

100

25

200

25

200

25

·Indicates MIL Types

OPERATIONAL TEMP. RANGE

l MoIcN

MoAc X

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-55

200

-55

200

-55

200

-55

200

-55

200

-55

200

-55

200

-55

200

-55

200

-55

200

-55

200

-55

200

-55

200

-55

200

-55

200

STORAGE TEMP. RANGE

l MoIcN

MoAc X

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-55

200

-55

200

-55

200

-55

200

-55

200

-55

200

-55

200

-55

200

-55

200

-55

200

-55

200

-55

200

-55

200

-55

200

-55

200

MAXIMUM FORWARD PEAK SURGE CURRENT
1,_,, 60 Hz SUPERIMPOSED
APK
1 1 1 1 1
1 1 1 1 1
1 1 1 1 1
1 1 2 2 1
2 2 1 2 2
1 2 2 1 2 2

MAXIMUM FORWARD VOLTAGE
@TA 2s0 c
AMB

l VF

IF

Voe

mAoc

1.0

40

1.0

100

1.0

20

1.0

100

1.0

7

1.0

100

1.0

3

1.0

100

1.0

15

1.0

100

1.0

5

1.0

100

1.0

1

1.0

100

1.0

3

1.0

100

1.1

100

1.0

100

1.0

100

1.1

100

1.0

100

1.0

100

1.1

100

1.0

100

1.0

100

1.1

100

1.0

100

1.0

100

1.1

100

1.0

100

1.0

100

CASE 35

MAXIMUM REVERSE CURRENT
@RATED
DC BLOCKING VOLTAGE
@ 2s 0 c AMB

I VR

IR

Voe

,uAoc

25

.025

25

.025

60

.025

60

.025

125

.025

125

.025

175

.025

175

.025

175

.50

25

.50

25

.50

60

.50

60

.50

175

.50

175

.50

175

.50

30

.25

30

.025

30

.025

60

.25

60

.025

60

.025

125

.25

125

.025

125

.025

175

.25

175

.025

175

.025

225

.25

225

.025

225

.025

8

SEE PAGE 25 FOR CASE DRAWINGS

SILICON DIODES

GLASS DIODES

TYPE
1N487 1N487A 1N488 1 N488A ·1 N645
1N646 ·1 N647 1N648 ·1 N649 1 N881 1N882
1N883 1N884 1N885 1 N886
1N887 1N888 1N889 1N890

MAXIMUM AVERAGE
RECTIFIED CURRENT V2 WAVE, RES. LOAD
60 Hz

PRY VOLTS

AAV@ TA
l mA oc

OPERATIONAL
TEMP.
lRANGE
MoIcN MoAcX

300 100

25

300 200

25

380 100

25

380 200

25

225 150 150

-65 200 -65 200 -65 200
-65 200 -65 175

300 150 150

400 150 150

500 150 150

600 150 150

200

50

25

300

50

25

-65 175
-65 175 -65 175 -65 175 -65 150 -65 150

400

50

25

-65 150

500

50

25

-65 150

600

50

25

-65 150

700

50

25

-65 150

800

50

25

-65 150

900

50

25

-65 150

1000

50

25

-65 150

70 100

25

-55 150

STORAGE TEMP.
IRANGE
MoIcN MoAcX
-65 200 -65 200 -65 200 -65 200 -65 200
-65 200 -65 200 -65 200 -65 200 -65 200 -65 200
-65 200 -65 200 -65 200 -65 200
-65 200 -65 200 -65 200 -55 175

MAXIMUM FORWARD PEAK SURGE CURRENT 1-, 60 Hz SUPERIMPOSED
APK
1.0 2.0 1.0 2.0 5.0*
5.0 5.0* 5.0 5.0* 0.5 0.5
0.5 0.5 0.5 0.5
0.5 0.5 0.5 0.5

MAXIMUM

FORWARD

VOLTAGE@

TA 25°C

IAMB

VVoFe

IF mAoe

1.1

100

1.0

100

1.1

100

1.0

100

1.0

400

1.0

400

1.0

400

1.0

400

1.0

400

1.0

50

1.0

50

1.0

50

1.0

50

1.0

50

1.0

50

1.0

50

1.0

50

1.0

50

1.0

20

MAXIMUM REVERSE CURRENT@ RATED DC BLOCKING VOLTAGE 25°C AMB
::c I IR µ,ADC

300 300 380 380 225
300 400 500 600 200 300
400 500 600 700
800 900 1000
70

.25 0.1
.25 0.1 .025
0.2 .025 0.2 .050 20 20
20 20 20 20
20 20 20 .025

MAXIMUM

REVERSE

RECOVERY

@ 25°C

lAMB

NROETFE.

µ,$

-----

-----

-
-
--
--

------

----

----

-
-
--

----

CASE 35

TYPICAL

JUNCTION

CAPACITANCE

@25°C

if INDICATES

IMAX.

VYoRe

C.J pf

---- ----
4 20

--

-4

20
-

4
--

2--0

---

----

----

----

*At 150°C

FAST RECOVERY GLASS DIODES

1N625 1N626 1N627 1N628 1N629
·1N643 1 N643A ·1 N658 1N659 ·1 N660
·1 N661
·1 N662
·1N663 1N789 1N790
1 N791 1N792 1N793 1N794 1N795
1N796 1N797 1 N798 1N799 1N800
1 N801 1N802 1N803 1N804 1 N891
1N892 1N893

30

5 100

-80 150 -80 150

50

5 100

-80 150 -80 150

100

5 100

-80 150 -80 150

150

5 100

-80 150 -80 150

200

5 100

-80 150 -80 150

175

40

25

-65 150 -65 150

175

40

25

-65 150 -65 150

100

200

25

-65 175 -65 200

50

100

25

-65 175 -65 200

100

100

25

-65 175 -65 200

200

100

25

-65 175 -65 200

85

100

25

-65 175 -65 200

85

200

25

-65 175 -65 200

30

120

25

-65 150 -65 175

30

120

25

-65 150 -65 175

30

160

25

-65 150 -65 175

30

200

25

-65 150 -65 175

60

120

25

-65 150 -65 175

60

120

25

-65 150 -65 175

60

160

25

-65 150 -65 175

60

200

25

-65 150 -65 175

120

120

25

-65 150 -65 175

120

120

25

-65 150 -65 175

120

160

25

-65 150 -65 175

120

200

25

-65 150 -65 175

150

120

25

-65 150 -65 175

150

160

25

-65 150 -65 175

200

120

25

-65 150 -65 175

200

160

25

-65 150 -65 175

50

200

25

-65 175 -65 200

100

200

25

-65 175 -65 200

200

200

25

-65 175 -65 200

"W" SINGLE PHASE BRIDGE

woos
W02 W04 W06

50 1000 100
200 1000 100 400 1000 100
600 1000 100

-55 125 -55 150 -55 125 -55 150 -55 125 -55 150 -55 125 -55 150

Notes: 1. To 400K ohms minimum measured in modified IBM "Y" test circuit when switched from 30mA forward current to
-35 volts. 2. To 200K ohms when switched from 5mA forward current
(1 µ,s pulse) to -40 volts in JAN 256 circuit. 3. To BOK ohms when switched from 5mA forward current to
-40 volts in JAN 256 circuit. 4. To 400K ohms when switched from 35mA forward current
to -35 volts in JAN 256 circuit. 5. To lOOK ohms when switched from 5mA forward current
to -40 volts in JAN 256 circuit.

CASE 35

0.5

1.5

4

20

1

1

1.0 4.0 8.0

0.5

1.5

4

35

1

1

1.0 4.0 8.0

0.5

1.5

4

75

1

1

1.0 4.0 8.0

0.5

1.5

4 125

1

1

1.0 4.0 8.0

0.5

1.5

4 175

1

1

1.0 4.0 8.0

0.5

1

10 100

1

2

0.3

10 ·3

0.5

1

100 100

1

2

0.3

10 ·3

0.6

1

100

50 .05

'3

0.3

4.0 6.0

0.5

1

6

50

5

4

0.3

4.0 6.0

0.5

1

6 100

5

4

0.3 4.0 6.0

0.5

1

6 200 10

4

0.3

4.0 6.0

0.5

1

{ 10

{ 10 50

1 20

5

0.5

4.0 6.0

0.5

1

100

50

5

5

0.5 4.0 6.0

0.5

1

10

20

1

6

0.5 4.0 6.0

0.5

1

10

20

5

6

0.25 4.0 6.0

0.5

1

50

20

5

6

0.5 4.0 6.0

0.6

1

100

20

5

7

0.5

4.0 6.0

0.5

1

10

50

1

8

0.5 4.0 8.0

0.5

1

10

50

5

8

0.25 4.0 8.0

0.5

1

50

50

5

8

0.5 4.0 8.0

0.6

1

100

50

5

9 0.5 4.0 a.a

0.5

1

10 100

1

8

0.5 4.0 8.0

0.5

1

10 100

5

8

0.25 4.0 8.0

0.5

1

50 100

5

8

0.5 4.0 8.0

0.6

1

100 100

5

9

0.5

4.0 8.0

0.5

1

10 125

1

8

0.5

4.0 8.0

0.5

1

50 125

5

8

0.5 4.0 8.0

0.5

1

10 125

5

8

0.5 4.0 8.0

0·.5

1

50 125 10

8

0.5 4.0 8.0

0.6

1

50

50 0.1

3

.3 4.0 8.0

0.6

1

50 100 0.1

3

.3

4.0 8.0

0.6

1

50 200

0.1

3

.3

4.0 8.0

CASE 41

50

1.0 1000

50

10

50

1.0 1000 200 10

50

1.0 1000 400 10

50

1.0 1000 600 10

6. To 200K ohms when switched from 5mA forward current to -20 volts in JAN 256 circuit.
7. To lOOK ohms when switched from 5mA forward current to -20 volts in JAN 256 circuit.
8. To 200K ohms when switched from 5mA forward current to -40 volts in JAN 256 circuit.
9. To lOOK ohms when switched from 5mA forward current to -40 volts in JAN 256 circuit.

· Indicates MIL types.

SEE PAGE 25 FOR CASE DRAWINGS

9

GLASS DIODES CAPSIL®

CASE 35

TYPE
CS7 CS10 CS12 CS15 IN3945 CS20 CS27 CS30 CS33 IN954 CS40 CS47 IN3628 IN955 IN3488 CS56 CS68 IN3947 IN3946 CS82 CS100

MAXIMUM WORKING
VOLTS @ 25°C
VOLTS DC
25 25 25 25 25 25 25 25 25 25 25 25 15 25 15 15 15
9 9 15 15

NOMINAL CAPACITANCE @ -4 VOLTS DC,
25°C
pF

CAPACITANCE RANGE
@ -4 VOLTS DC, 25°C
pF

7

5.6-8.4

10

8.0-12.0

12

9.6-14.4

15

12.0-18.0

20

18.0-22.0

20

16.0-24.0

27

21.6-32.4

30

24.0-36.0

33

26.4-39.6

35

28.0-42.0

40

32 .0-48 .0

47

37 .6-56 .4

50

47.0-53 .0

50

40.0-60.0

56

50.4-61.6

56

44.8-67.2

68

54.4-81.6

70

56.0-84.0

71

62.5-79.5

82

65.6-98.4

100

80.0-120.0

OPERATIONAL TEMP. RANGE

l MoIcN

MAocX

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

-65

175

STORAGE

TEMP.

lRANGE

MocIN

MoAcX

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

-65

200

MIN. Q @ 50 MHz, -4 VOLTS DC,
25°C
Q

Q @ 50 MHz, AND MAX. WORKING VOLTAGE
25°C
Q

20

50

20

50

20

50

20 7

5-0

20

50

18

45

18

45

18

45

7

20

18

45

18 30

4-5

7 7

2-0

16

25

16
9 7

-30
-

14

25

12

20

ULTRA-FAST PLANAR COMPUTER DIODE

CASE 40

TYPE
GP101A GP101 B GP102A GP102B GP103A GP103B GP104A GP104B GP105A GP105B

MAXIMUM AVERAGE
RECTIFIED CURRENT 112 WAVE, RES. LOAD
60 Hz

l l PRV ( AAv@ TA

VOLTS mA

°C

OPERATIONAL
ITEMP.
RANGE
MoIcN MoAcX

10

100

25

-65 175

10

100

25

-65 175

20

100

25

-65 175

20

100

25

-65 175

30

100

25

-65 175

30

100

25

-65 175

40

100

25

-65 175

40

100

25

-65 175

50

100

25

-65 175

50

100

25

-65 175

STORAGE
ITEMP.
RANGE
MoIcN MoAcX
-65 200 -65 200 -65 200 -65 200 -65 200
-65 200 -65 200 -65 200 -65 200 -65 200

MAXIMUM FORWARD PEAK SURGE CURRENT 1 -60 Hz SUPERIMPOSED
APK
1 1 1 1 1
1 1 1 1 1

MAXIMUM FORWARD VOLTAGE@ TA= 25°C
AMB

1

20

1

20

1

20

1

20

1

20

1

20

1

20

1

20

1

20

1

20

MAXIMUM REVERSE CURRENT@ RATED DC BLOCKING VOLTAGE
25°C

10

.05

10

.05

10

.05

10

.05

20

.05

20

.05

20

.05

20

.05

20

.05

20

.05

MAXIMUM

REVERSE

RECOVERY

@ 25°C

lAMB
REF.

NOTE

ns

1

2

1

2

1

2

1

2

1

2

1

2

1

2

1

2

1

2

1

2

TYPICAL JUNCTION
lCAPACITANCE @ 25°C
VR C.r Voe pF

0

2

0

4

0

2

0

4

0

2

0

4

0

2

0

4

0

2

0

4

Note 1-When switched from 10 mA forward current to -6V in special computer test circuit. Recovery to 1 mA through loop impedance 100 ohms.

HERCULEADS* ... The Ultimate Diode G actual size
General Instrument's HERCULEADS beam-lead diode is a selfcontained diode package with total environmental immunity - the smallest discrete diode available - and it is virtually indestructable.

1 Special low resistance contact area.
2 Gold leads. Lead mass large relative to mass of diode. Both leads on same face of chip.
3 Bonding area external to active device. 4 Junction completely shielded by leads. 5 Oxide-passivation.
6 Silicon Chip

OUTLINE DRAWING All Dimensions in Mils

Electrical Specifications
for XH100 SERIES at 25°C.
PRV ______________________ gov
I r _________________________40 mA @ 1V IT _________________________.2nA @ -40V
c __________________________2.4 pf@ ov
4 t r ee ----------------------- ns, 1Oma , I r to - 40V

*Trade Mark

The HERCULEADS* BEAM-LEAD DIODE is sold as a 10-PAK package containing 10-XHlOO
beam-lead diodes.

r-------- ·
I HllRC\.LllAD· I
\'-\-O---·-\--\-l-J\

10

SEE PAGE 25 FOR CASE DRAWINGS

--
ZENER VOLTAGE REGULATOR DIODES

200 mW TYPES

CASE 39

TYPE
1N225 1N226 1N227 1N228 1N229
1N230 1 N231 1N232 1N233 1N234
1N235 1N236 1N237 1N238 1N239
1N465 1N466 1N467 1N468 1N469
1N470 1N471 1N472 1N473 1N474 1N475

POWER RATING
-
mW NOTES

ZENER VOLTS @IZT
VOLTS

TEST CUR· RENT IZT
mA

MAXIMUM DYNAMIC IMPEDANCE (See Note 1) @IZT @IZK
I OHMS OHMS

TEST CUR· RENT IZK
mA

200

2 7.5-10 0.2

200

2

9·12 0.2

200

2 11-14.5 0.2

200

2 13.5-18 0.2

200

2 17-21 0.2

200

2 20-27 0.2

200

2 25-32 0.2

200

2 30-39 0.2

200

2 37-45 0.2

200

2 43-54 0.2

200

2 52-64 0.2

200

2 62-80 0.2

200

2 75-100 0.2

200

2 90-120 0.2

200

2 110-145 0.2

200

3

2-3.2 5

200

3

3-3.9 5

200

3 3.7-4.5 5

200

3 4 .3 -5.4 5

200

3 5.2-6.4 5

200

3 6 .2 -8.0 5

200

2

3-3.9 5

200

2 3.7·4.5 5

200

2 4.3-5.4 5

200

2 5.2-6.4 5

200

2 6.2-8.0 5

60 10 55 10 45 10 35 10 20 10
10 10 65 10 60 10 50 10 40 10 25 10

REVERSE CURRENT @ 25°C IR@VR
µ,A VOLTS
0.5 6.8 0.5 8.2 0.5 10 0.5 12 0.5 15
0.1 18 0.1 22 0.1 27 0.1 33 0.1 39
0.1 47 1 56 1 68 1 82 1 100
75 1 50 1 5 1 5 1.5 5 1.5
5 3.5 50 1 5 1 5 1.5 5 1.5 5 3.5

250 mW TYPES

CASE 39

1N702 250 1N703 250 1N704 250 1N705 250 1N706 250
1N707 250 1N708 250 1N709 250 1N710 250 1 N711 250
1N712 250 1N713 250 1N714 250 1N715 250 1 N716 250
1 N717 250 1N718 250 1 N719 250 1 N720 250 1 N721 250
1N722 250 1N723 250 1N724 250 1N725 250 1N726 250
1N727 250 1N728 250 1N729 250 1 N730 250 1 N731 250

4

2-3.2 5

4

3-3.9 5

4 3.7-4.5 5

4 4.3-5.4 5

4 5.2-6.4 5

60 10 75 1 55 10 50 1 45 10 5 1 35 10 5 1.5
30 10 5 1.5

4 6.2-8.0 5

4

5.6

25 3.6

4

6 .2

25 4.1

4

6.8

25 4.7

4

7.5

25 5.3

10 10

5 3.5

4

8.2

25 6

4

9.1

12 7

4

10

12 8

4

11

12 9

4

12

12 10

4

13

12 11

4

15

12 13

4

16

12 15

4

18

12 17

4

20

4 20

4

22

4

24

4

27

4

30

4

33

4 24 4 28 4 35
4 42
4 50

4

36

4

39

4

43

4

47

4

51

4 60 4 70
4 84 4 98
4 115

1N732 250

4

56

1N733 250

4

62

1N734 250

4

68

1N735 250

4

75

1N736 250

4

82

4 140 2 170 2 200 2 240
2 280

1N737 250

4

91

1N738 250

4

100

1N739 250

4

110

1N740 250

4

120

1N741 250

4

130

1 340 1 400 1 490
1 570 1 650

·Indicates MIL Type.

Notes: 1. Unless otherwise specified in notes, dynam ic impedance is measured by superimposing alternating current equal to 10% of the direct current IZT or IZK.
2. 10% tolerance: suffix A = 5%, Double anode type. 3. 10% tolerance: suffix A = 5%, suffix B = 1%.
4. 10% tolerance: suffix A = 5%.
5. 10% tolerance: suffix A = 5%. For dynamic impedance superimpose lmA ac upon IZT
6. 10% tolerance.
7. 20% tolerance: suffix A = 10%, suffix B = 5%.

250 mW TYPES Cont'd

CASE 39

TYPE
1N742 1N743 1N744 1N745 1 N761

POWER RATING
-
mW NOTES

ZENER VOLTS @ IZT
VOLTS

250

4

150

250

4

160

250

4

180

250

4

200

250

6 4.3-5.4

TEST CUR· Rf NT IZT
mA

MAXIMUM
DYNAMIC
IMPEDANCE (See Note 1) @IZT @IZK
I OHMS OHMS

TEST CUR · RENT IZK
mA

1 860 1 970 1 1200
1 1400 10 40

REVERSE CURRENT @ 25°C IR@VR
µ,A VOLT~

1N762 250

6

1N763 250

6

1N764 250

6

1N765 250

6

1N766 250

6

1N767 250

6

1N768 250

6

1N769 250

6

1N3477 250

4

400 mW TYPES

·1 N746A 400

5

·1 N747A 400

5

·1 N748A 400

5

·1 N749A 400

5

·1 N750A 400

5

·1N751A 400

5

·1 N752A 400

5

·1 N753A 400

5

·1 N754A 400

5

·1 N755A 400

5

·1 N756A 400

5

·1 N757A 400

5

·1 N758A 400

5

·1 N759A 400

5

1N957

400

7

1 N958 400

7

1N959 400

7

1N960 400

7

1 N961 400

7

·1 N962B 400

7

·1 N963B 400

7

·1 N964B 400

7

·1 N965B 400

7

·1 N966B 400

7

·1 N967B 400

7

·1 N968B 400

7

·1 N969B 400

7

·1 N970B 400

7

·1 N971 B 400

7

·1 N972B 400

7

·1 N973B 400

7

·1 N974B 400

7

·1 N975B 400

7

·1 N976B 400

7

·1 N977B 400

7

·1 N978B 400

7

·1 N979B 400

7

·1 N980B 400

7

·1 N981 B 400

7

·1 N982B 400

7

·1 N983B 400

7

·1 N984B 400

7

·1 N985B 400

7

·1 N986B 400

7

·1 N987B 400

7

·1 N988B 400

7

·1 N989B 400

7

·1 N990B 400

7

·1 N991 B 400

7

·1 N992B 400

7

5.2-6.4 10 18 6.2-8.0 10 7 7.5-10 10 12
9-12 5 45 11-14.5 5 55

13.5-18 17-21 20-27
2.2

5 70 5 100
5 150
5 60

3.3

20 28

3 .6

20 24

3.9

20 23

4.3

20 22

4.7

20 19

5.1

20 17

5.6

20 11

6 .2

20 7

6.8

20 5

7.5

20 6

8.2

20 8

9.1

20 10

10

20 17

12

20 30

6.8 18.5 4.5

7.5 16.5 5.5
8.2 15 6.5 9.1 14 7.5 10 12.5 8.5
11 11.5 9.5

12 10.5 11.5

13

9.5 13

15

8.5 16

16

7.8 17

18

7.0 21

20

6.2 25

22

5.6 29

24

5.2 33

27

4.6 41

30

4.2 49

33

3.8 58

36

3.4 70

39

3.2 80

43

3.0 93

47

2.7 105

51

2.5 125

56

2.2 150

62

2.0 185

68

1.8 230

75

1.7 270

82

1.5 330

91

1.4 400

100

1.3 500

110

1.1 750

120

1.0 900

130

.95 1100

150

.85 1500

160

.80 1700

180

.68 2200

200

.65 2500

700
700 700 700 700 700
700 700 700 700 750
750 750 750 750 1000
1000 1000 1000 1500 1500
1500 2000 2000 2000 2000
3000 3000 3000 4000 4500
5000 6000 6500 7100 8000

CASE 39
5 1.0 5 1.0 5 1.0 5 1.0 10 2.0
10 2.0 10 3.0 10 4.0
5 5.0 5 6.0
5 6.5 5 7.0 5 8.0 5 9.0 1.0
0.5 0.5 0.5 0.25 0.25
0.25 0.25 0.25 0.25 0.25
0.25 0.25 0.25 0.25 0.25
0 .25 0.25 0.25 0.25 0.25
0.25 0.25 0.25 0.25 0.25
0.25 0.25 0.25 0.25 0.25
0.25 0.25 0.25 0.25 0.25

SEE PAGE 25 FOR CASE DRAWINGS

11

1 WATT FLANGELESS TYPES

CASE 36

TYPE

POWER RATING (Watts) NOTE

·1 N3021 1

1

·1 N3022 1

1

·1 N3023 1

1

·1 N3024 1

1

·1 N3025 1

1

·1N3026 1

1

·1 N3027 1

1

·1 N3028 1

1

·1 N3029 1

1

·1 N3030 1

1

·1 N3031 1

1

·1 N3032 1

1

·1 N3033 1

1

·1 N3034 1

1

·1 N3035 1

1

·1 N3036 1

1

·1 N3037 1

1

·1 N3038 1

1

·1 N3039 1

1

·1 N3040 1

1

·1 N3041 1

1

·1 N3042 1

1

·1 N3043 1

1

·1N3044 1

1

·1 N3045 1

1

·1N3046 1

1

·1 N3047 1

1

·1 N3048 1

1

·1 N3049 1

1

·1 N3050 1

1

·1 N3051 1

1

ZENER VOLTS @ IZT
VOLTS
11 12 13 15 16
18 20 22 24 27
30 33 36 39 43
47 51 56 62 68
75 82 91 100 110
120 130 150 160 180 200

TEST CUR· RENT IZT
mA

MAXIMUM
DYNAMIC
IMPEDANCE (See Note 1) @IZT @IZK
I OHMS OHMS

TEST CUR· RENT IZK
mA

REVERSE CURRENT
@ 2s0 c
IR@VR
µ,A VOLT

23 8 21 9 19 10
17 14 15.5 16

700 0.25 10 700 0.25 10 700 0.25 10 700 0.25 10 700 0.25 10

14 20 12.5 22 11.5 23
10.5 25 9.5 35

750 0.25 10 750 0.25 10 750 0.25 10 750 0.25 10 750 0.25 10

8.5 40

7.5 45

7

50

6.5 60

6

70

5.5 80 5 95 4.5 110 4 125 3.7 150

1000 0.25 10

1000 0.25 10

1000 0.25 10

1000 0.25 10 N

1500 0.25 10 LL.I

.....

1500 1500

0.25 10 0.25 10

0 z

2000 2000 2000

0.25 10 0.25 10 0.25 10

LL.I
eLLn.I

3.3 175 3 200 2.8 250 2.5 350
2.3 450

2000 3000 3000 3000 4000

0.25 10 0.25 10 0.25 10 0.25 10 0.25 10

2 550 1.9 700 1.7 1000 1.6 1100 1.4 1200
1.2 1500

4500 5000 6000 6500 7000
8000

0.25 10 0.25 10 0.25 10 0.25 10 0.25 10 0.25 10

·Available in MIL Type.
Note: 1. 20% tolerance: suffix A= 10%, suffix B = 5%. 2. VR=Vzx [100-(% tolerance)] x0.8x 1/ 100

1 WAIT Glass-Amp®

CASE 38

TYPE

POWER RATING (Watts) NOTE

1N4162 1

1

1N4163 1

1

1N4164 1

1

1N4165 1

1

1N4166 1

1

1N4167 1

1

1N4168 1

1

1N4169 1

1

1N4170 1

1

1N4171 1

1

1N4172 1

1

1N4173 1

1

1N4174 1

1

1N4175 1

1

1N4176 1

1

1N4177 1

1

1N4178 1

1

1N4179 1

1

1N4180 1

1

1N4181 1

1

1N4182 1

1

1N4183 1

1

1N4184 1

1

1N4185 1

1

1N4186 1

1

1N4187 1

1

1N4188 1

1

1N4189 l

1

1N4190 1

1

1N4191 1

1

1N4192 1

1

1N4193 1

1

ZENER VOlTS @ IZT
VOLTS
10 11 12 13 15
16 18 20 22 24
27 30 33 36 39
43 47 51 56 62
68 75 82 91 100
110 120 130 150 160 180 200

TEST CUR· RENT IZT
mA

MAXIMUM
DYNAMIC
IMPEDANCE (See Note 1) @IZT @IZK
I OHMS OHMS

TEST CUR· RENT IZK
mA

REVERSE CURRENT @25°C IR@VR
µ,A VOLT

25 7 23 8 21 9 19 10 17 14

700 0.25 10
700 0.25 5 700 0.25 5
700 0.25 5 700 0.25 5

15.5 16 14 20
12.5 22 11.5 23
10.5 25

700 0.25 5 750 0.25 5 750 0.25 5 750 0.25 5 750 0.25 5

9.5 35 8.5 40 7.5 45 7.0 50 6.5 60
6.0 70 5.5 80 5.0 95 4.5 110 4.0 125
3.7 150 3.3 175 3.0 200 2.8 250 2.5 350

750 1000 1000 1000 1000
1500 1500 1500 2000 2000
2000 2000 3000 3000 3000

0.25 0.25 0.25 0.25 0.25
0.25 0.25 0.25 0.25 0.25
0.25 0.25 0.25 0.25 0.25

5

5

5

5 N 5

5 5

.L.L....I 0 z

5

5 5

LL.I
eLLn.I

5 5 5 5 5

2.3 450 4000 0.25 5 2.0 550 4500 0.25 5
1.9 700 5000 0.25 5 1.7 1000 6000 0.25 5
1.6 1100 6500 0.25 5
1.4 1200 7000 0.25 5 1.2 1500 8000 0.25 5

Glass-Amp®
· Handles one full ampere at 100°C; PRY to 1, OOOV
· Miniature Space-Saver Symmetrical package (only .150" x .360")

STILL THE INDUSTRY'S MOST POPULAR 1-AMP SILICON RECTIFIER
OVER 50 MILLION NOW IN USE!
· Fully insulated, hermetically sealed body mounts directly on PC boards.
· Withstands 50-ampere surge current

12

SEE PAGE 25 FOR CASE DRAWINGS

GERMAN/UNI TRANSISTORS

GERMANIUM COMPUTER TRANSISTORS/INTERMEDIATE TO HIGH CURRENT/MEDIUM SPEED D.C. SWITCHING

RATINGS AT 25°C AMBIENT TEMPERATURE (UNLESS OTHERWISE SPECIFIED)

TYPE
2N315A 2N316 2N316A 2N356 2N356A
2N357A 2N358 ·2N358A 2N377A 2N388A
·2N396A 2N579 2N580 ·2N1306 ·2N1307

Polarity
P·PNP N·NPN

Case

p

6

p

6

p

6

N

6

N

6

N

6

N

6

N

6

N 6 (G.B.)

N 6 (G.B.)

p 6 (G.B.)

p

6

p

6

N 6 (G.B.)

p 6 (G.B.)

MAXIMUM RATINGS @ 2s· c

c Pc
@2s0 mW

VCBO Volts

VEBO Volts

VCEO * VcES # VCER + VcEX Volts

1§0

30

20

20

100

20

20

10

150

30

20

15

100

20

20

18

150

30

20

20

150

30

20

20

100

20

20

12

150

30

20

15

150

40

15

+ 40

150

40

15

# 20

200

30

20

20

150

20

12

150

20

20

150

25

25

150

30

25

I CBO

Vcs Volts

Max. µ,A

5

2

5

2

5

2

5

5

5

5

5

5

5

5

5

5

1.0

5

1.0

5

20

6

12

5

12

5

25

6

25

6

STATIC FORWARD CURRENT TRANSFER RATIO (hFE)

TEST CONDITIONS

LIMITS

Ile
mA
100 200 200 100 100

I 1 VcE
Volts

Min.

Max.

0.2 0.2 0.2
0.25 0.25

20

50

20

50

20

50

20

50

20

50

200

0.25

25

75

300

0.25

20

50

300

0.25

25

75

200

0.75

20

200

0.75

30

200

0.35

15

150

400

0.3

20

400

0.3

30

200

0.35

20

200

0.35

20

Alpha

Cutoff Collecto~
,,,,,, Frequency Capacity Cobo

Min.

Max.

MHz

PF

85

814

812

814

812

814

83

814

83

814

86

814

89

814

89

814

86

20

5

20

5

20

5

10

10

20

10

20

COMPUTER TRANSISTORS/MEDIUM CURRENT FOR MEDIUM SPEED D.C. SWITCHING

·2N404 ·2N404A 2N438A 2N439A 2N440A
2N444A 2N445A 2N446A 2N447A 2N519A
2N520A 2N521A 2N522A 2N523A 2N585

p

6

150

25

12

p

6

150

40

25

N 6 (G .B.) 150

30

25

N

6

150

30

25

N

6

150

30

25

N

6

150

40

10

N

6

150

30

10

N

6

150

30

10

N

6

150

30

10

p

6

150

25

10

p

6

150

25

10

p

6

150

25

10

p

6

150

25

10

p

6

150

20

10

N

6

150

25

20

12

5

12

5

25

25

10

25

25

10

15

25

10

25

5

4

18

5

4

15

5

4

12

5

4

18

5

2

15

5

2

12

5

2

10

5

2

6

5

2

2.5

6

50

1.0

50

1.0

50

1.0

20

0.25

20

0.25

20

0.25

20

0.25

20

0.25

20

0.25

20

0.25

20

0.25

20

0.25

20

0.2

4

20

4

20

20

2.5

20

30

5

20

40

10

20

20

40

0.5

814

40

160

2

814

60

250

5

814

80

300

9

814

20

50

0.5

814

40

170

3

814

60

250

8

814

80

320

15

814

100

400

21

814

20

3

20

MEDIUM POWER ALLOY JUNCTION TRANSISTORS FOR SWITCHING AND AMPLIFIER APPLICATIONS

2N597

p

6

250

45

45

*40

1.5

5

·2N598

p

6

250

35

30

*35

1.5

5

·2N599

p

6

250

30

20

* 20

1.5

5

·2N600

p

Fig.12

750

35

30

*35

1.5

5

2N601

p

Fig.12

750

30

20

* 20

1.5

5

2N2648

p

6 (G .C.)

300

35

30

10

15

5

100

1.0

40

100

1.0

70

225

100

1.0

100

100

1.0

100

1.0

1.0A

0.5

70

225

100

80

500

3

20

5fT

20

lOfT

20

5fT

20

lOfT

20

lOfT

30

HIGH VOLTAGE TRANSISTORS FOR NIXIE AND OTHER NEON TUBE DRIVERS

2N398A

p

6

150 105

50

*105

2.5

14

·2N1310

N

6

150

90

20

5

7

2N1311

N

6

150

75

20

5

7

2N1312

N

6

150

50

20

5

7

2N1408

p

6

150

50

10

5

7

5

0.35

20

5

0.25

20

5

0.25

15

5

0.25

15

81.0

811

81.5

811

81.5

811

835

BILATERAL TRANSISTORS FOR CORE AND DRUM MEMORY ADDRESSING CHOPPER SERVICE

IB

2N594

N

6

150

20

20

20

5

5

2N595

N

6

150

20

20

15

5

5

2N596

N

6

150

20

20

10

5

5

1.0

0.2

20

1.0

0.2

35

1.0

0.2

50

1.5

815

3

815

5

815

AUDIO TRANSISTORS FOR AUDIO AND LOW SPEED COMPUTER APPLICATIONS

TYPE
·2N331 ·2N464 ·2N465 ·2N466 ·2N467

Polarity P·PNP N-NPN
p p p p p

Case
6 6 6 6 6

MAXIMUM RATINGS

l l l @ 2Psc0c mW

@25°C

Vc so Volts

vV.o.ltos

VcEo Volts

150

30

12

150

45

12

40

150

45

12

30

150

35

12

20

150

35

12

15

lcBO

1 Vcs
Volts

Mµa,Ax.

20

15

20

15

20

15

20

15

A.C. CURRENT GAIN COMMON EMITIER (h te)

I J I CONDITIONS

le

VcE Freq.

mA

Volts kHz

LIMITS

I Min.

Max.

1

6

1

30

70

1

6

1

14

1

6

1

27

1

6

1

56

1

6

1

112

Notes: &Typical Values ·Available to Military Specifications
G.B. - Base Connected to Case G.C. - Collector Connected to Case

ALPHA CUTOFF Frequency
fhtb Min. MHz
0.4 80.7 80.8 81.0 81.2

SEE PAGE 24 FOR CASE DRAWINGS

13

SILICON TRANSISTORS

TYPE

POLARITY

Pc

P-PNP @ 25°C

CASE N-NPN

mW

HIGH SPEED SWITCHES

MAXIMUM RATINGS

1 l VcBo

@ 25°C VEBO + VcE R

VOLTS VOLTS VOLTS

FORWARD CURRENT

TRANSFER RATIO (hFE)

l l le

mA

MIN. MAX.

1VBE

le

VOLTS

mA

MAX.

2N706

9

N

300

2S

3

+ 20

10

20

10 0.9

2N706A

9

N

300

2S

s

lS + 20

10

20

60

10 0.9

2N706B

9

N

300

2S

s

lS + 20

10

20

60

10 0.9

2N708

9

N

360

40

s

lS + 20

10

30 120

10 o.s

2N743

9

N

300

20

s

12

10

20

60

10 o.ss

2N744

9

N

300

20

s

12

10

40 120

10 o.ss

2N753

9

N

300

2S

s

lS + 20

10

40 120

10 0.9

2N834

9

N

300

40

s

10

2S

10 0.9

2N835

9

N

300

2S

3

20

10

20

10 0.9

LOW LEVEL, LOW NOISE AMPLIFIER

2N929

9

N

300

4S

s

2N929A

9

N

300

60

6

2N930

9

N

soo

4S

s

2N930A

9

N

soo

60

6

2N2483

9

N

360

60

6

2N2484

9

N

360

60

6

CORE DRIVER

4S

0.01

40 120

4S

0.01

40 120

4S

0.01

100 300

4S

0.01

100

300

60

0.01

40 120

60

0.01

100

soo

10 1.0 10 0.9 10 1.0

10 0.9

0.1

0.7

0.1 0.7

2N2537

6

N

soo

60

s

30 + 40

soo

20

2N2538

6

N

soo

60

s

30 + 40

soo

30

2N2539

9

N

soo

60

s

30 +40

soo

20

2N2540

9

N

soo

60

s

30 + 40

soo

30

soo

2.6

soo 2.6

500 2.6

soo

2.6

GENERAL PURPOSE, MEDIUM SPEED, MEDIUM POWER AMPLIFIER AND SWITCHES

2N696

6

N

600

60

s

+ 40

lSO

20

60

lSO 1.3

2N697

6

N

600

60

s

+ 40

lSO

40

120

lSO

1.3

2N698

6

N

soo 120

7

60 + so

lSO

20

60

lSO

1.3

2N699

6

N

600 120

s

+ so

lSO

40

120

lSO

1.3

2N718

9

N

400

60

s

+ 40

lSO

40 120

lSO

1.3

2N718A

9

N

500

7S

7

32 + so

150

40 120

lSO

1.3

2N721

9

p

400

50

s

35 + so

lSO

20

45

lSO

1.3

2N722

9

p

400

so

s

3S + so

lSO

30

90

lSO

1.3

2N1131

6

p

600

so

s

3S + so

150

20

4S

lSO

1.3

2N1132

6

p

600

so

s

3S +so

lSO

30

90

lSO

1.3

2N1613

6

N

soo

7S

7

+ so

lSO

40 120

lSO 1.3

2N1711

6

N

soo

7S

7

+ so

lSO

100 300

150

1.3

2N1893

6

N

soo 120

7

so + 100

150

40

120

150

1.3

2N2192

6

N

soo

60

s

40

lSO

100 300

lSO

1.3

2N2192A

6

N

soo

60

5

40

150

100 300

lSO

1.3

2N2192B

6

N

soo

60

s

2N2193

6

N

soo

so

s

2N2193A

6

N

soo

so

s

2N2193B

6

N

soo

so

s

2N2217

6

N

soo

60

s

40

lSO

100 300

150

1.3

50

150

40 120

lSO

1.3

50

150

40 120

150

1.3

50

lSO

40 120

lSO

1.3

30

150

20

60

lSO

1.3

2N2218

6

N

soo

60

s

2N2218A

6

N

soo

75

6

2N2219

6

N

soo

60

5

2N2219A

6

N

soo

7S

6

2N2220

9

N

soo

60

5

30

lSO

40

120

150

1.3

40

lSO

40 120

lSO

1.2

30

150

100 300

lSO

1.3

40

150

100 300

150 1.2

30

lSO

20

60

150 1.3

2N2221

9

N

500

60

5

30

150

40

120

150

1.3

2N2221A

9

N

500

75

6

40

150

40

120

150

1.2

2N2222

9

N

500

60

5

30

150

100 300

lSO

1.3

2N2222A

9

N

500

75

6

40

150

100 300

150 1.2

2N2303

6

p

600

50

5

35 +so

150

7S 200

lSO

1.3

2N2837

9

p

500

50

s

2N2838

9

p

500

so

s

2N2904

6

p

600

60

s

2N2904A

6

p

600

60

s

2N2905

6

p

600

60

5

3S

lSO

30

90

lSO

1.3

3S

150

75 225

lSO

1.3

40

lSO 500

40 120 20

150 1.3 500 2.6

150

40 120

150

1.3

60

soo

40

500 2.6

40

150 soo

100 300

lSO

1.3

30

::i J'.)

2.6

2N2905A

6

p

600

60

5

2N2906

9

p

400

60

5

2N2906A

9

p

400

60

5

2N2907

9

p

400

60

5

2N2907A

9

p

400

60

5

2N3133

6

p

600

50

4

2N3134

6

p

600

50

4

2N3135

9

p

400

so

4

2N3136

9

p

400

so

4

60

150 500

100 300

150

1.3

so

500 2.6

40

150 500

40

120

lSO

1.3

20

500 2.6

60

lSO soo

40 120

lSO

1.3

40

500 2.6

40

150 500

100 300 30

lSO

1.3

500 2.6

60

lSO 500

100 300

150

1.3

so

500 2.6

35

150

40 120

150

1.5

35

lSO

100 300

150

1.5

35

lSO

40 120

150

1,.5

3S

150

100 300

lSO 1.5

IVcE (SAT)

mleA

VOLTS MAX.

GAIN
BAND· WIDTH fT MIN.
MHz

COLLECTOR
CAPACITY C ob MAX.
pf

10 0.6

200

6

10 0.6

200

s

10 0.4

200

s

10 0.4

300

6

2SO

s

2SO

s

10 0.6

200

s

10 0.2S

3SO

4

10 0.3

300

4

10 1.0

30

s

10 o.s

4S

6

10 1.0

30

s

10 o.s

4S

6

1.0 0.3S

60

6

0.1 0.3S

60

6

soo

1.6

2SO

s

soo 1.6

2SO

s

soo 1.6

2SO

s

soo 1.6

2SO

s

lSO 1.S

40

3S

lSO

1.S

so

3S

lSO s

40

lS

lSO s

so

20

lSO 1.S

so

3S

150 1.S

60

2S

lSO 1.S

so

4S

lSO 1.S

60

4S

lSO 1.S

so

4S

lSO 1.S

60

45

lSO 1.S

60

2S

lSO

1.S

70

2S

lSO 5

so

lS

150 0.3S

so

20

lSO 0.2S

so

20

lSO O.lS

so

20

150 0.3S

so

20

150 0.2S

so

20

lSO O.lS

so

20

150 0.4

2SO

s

150 0.4

2SO

s

lSO 0.3

2SO

s

150 0.4

2SO

s

150 0.3

300

s

lSO 0.4

2SO

s

150 0.4

2SO

s

lSO 0.3

250

s

150 0.4

2SO

s

150 0.3

300

s

150 1.5

60

45

150 0.4

120

2S

lSO 0.4

120

2S

150 0.4 soo 1.6

200

s

150 0.4 soo 1.6

200

s

150 0.4 500 1.6

200

s

150 0.4 500 1.6

200

s

150 0.4 soo 1.6

200

s

lSO 0.4 soo 1.6

200

s

150 0.4 soo 1.6

200

s

lSO 0.4 soo 1.6

200

s

lSO 0.6

200

10

150 0.6

200

10

150 0.6

200

10

lSO 0.6

200

10

14

SEE PAGE 24 FOR CASE DRAWINGS

EPOXY ENCAPSULATED TRANSISTORS

EPOXY ENCAPSULATED TRANSISTORS

TYPE*

POLARITY N-NPN P-PNP

VCBO VcEO VEBO VOLTS VOLTS VOLTS

hFE@ VcE
le VOLTS mA

ht e @ VcE
le VOLTS mA

2N2711

N

2N2712

N

2N2713

N

2N2714

N

2N2715

N

2N2716

N

2N2921

N

2N2922

N

2N2923

N

2N2924

N

2N2925

N

2N2926

N

2N3390

N

2N3391

N

2N3391A N

2N3392

N

2N3393

N

2N3394

N

2N3395

N

2N3396

N

2N3397

N

2N3398

N

2N3414

N

2N3416

N

2N3563

N

2N3564

N

2N3565

N

2N3566

N

2N3605

N

2N3606

N

2N3607

N

2N3638

p

2N3638A

p

2N3641

N

2N3643

N

2N3644

p

2N3645

p

2N3662

N

2N3663

N

2N3691

N

2N3692

N

2N3702

p

2N3703

p

2N3704

N

2N3705

N

2N3706

N

2N3707

N

2N3708

N

2N3709

N

2N3710

N

2N3711

N

2N3721

N

2N3793

N

2N3794

N

2N3825

N

2N3828

N

2N3843A N

2N3844A N

2N3845A N

2N3858

N

2N3859

N

2N3860

N

2N3900

N

2N3900A N

2N3903

N

2N3904

N

2N3905

p

2N3906

p

2N3983

N

2N3984

N

2N3985

N

2N4140

N

2N4141

N

2N4142

p

2N4143

p

2N4227

N

2N4228

p

18 18 5.0

30-90

4.5 2

18 18 5.0

75-125 4.5

2

18 18 5.0

30-90

4.5 2

18 18 5.0

75-225 4.5 2

18 18 5.0

30-90

4.5 2

30-120 4.5 2 80-300 4.5 2 30-120 4.5 2
80-300 4.5 2 30-120 4.5 2

18 18 5.0

75-225 4.5

2

80-300 4.5 2

25 25 5.0

35-70

10 2

25 25 5.0

55-110 10 2

25 25 5.0

90-180 10 2

25 25 5.0

150-300 10 2

25 25 5.0

235-470 10 2

18 18 5.0

35-470 10 2

25 25 5.0 400-800 4.5 2 400-1250

25 25 5.0 250-500 4.5 2 250-800

25 25 5.0 250-500 4.5 2 250-800

25 25 5.0 150-300 4.5 2 150-500

25 25 5.0

90-180 4 .5

2

90-400

25 25 5.0

55-110 4.5 2

55-300

25 25 5.0 150-500 4.5 2 150-800

25 25 5.0

90-500 4.5

2

90-800

25 25 5.0 25 25 5.0
25 25 5.0 50 50 5.0 30 12 4 .0

55-500 4.5 2 55-800 4.5 2 75-225 4.5 2 75-225 4.5 2 20-200 10 8

55-800 55-1250
75
75 20-250 10 8

30 15 4.0

20-500 10 15

30 25 6.0 150-600 10 1 120-750

5

40 30 5.0 150-600 10 10

18 14 5.0

30

1 10

18 14 5.0

30

1 10

18 14 5.0

30

1 10

25 25 4.0

30

1 50

25

50 50 4.0

30-180

1

50

25

60 30 5.0

40-120 10 150

60 30 5.0 100-300 10 150

10 10 10 10

45 45 5.0 100-300 10 150

60 60 5.0 100-300 10 150

18 12 3.0

20

10 8

30 12 3.0

20

10 8

35 20 4.0

40-160

1 10

40-200 10 5

35 20 4.0 100-400

1

10 100-560

10

5

40 25 5.0

60-300

5

50

50 30 5.0

30-150

5 50

50 30 5.0 100-300

3

50

50 30 5.0

50-150

2 50

40 20 5.0

30-600

2 50

30 30 6.0 100-400

5 .1

100-550

5

.1

30 30 6.0

45-660

5

1

45-800

5

1

30 30 6.0

45-165

5

1

45-250

5

1

30 30 6.0

90-330

5

1

90-450

5

1

30 30 6.0 180-600

5

180-800

5

1

18 18 5.0

60-660 10 2

40 20 5.0

20-120 10 10

40 20 5.0 100-600 10 10

30 15 4.0

20

10 2

40 40 3.0 30 30 4.0
30 30 4.0 30 30 4.0 30 30 4.0

30-200 20 12

20-40

4.5

2

35-70

4.5

2

60-120 4.5 2

60-120 4.5 2

30 30 4.0 100-200 4.5 2

30 30 4.0 150-300 4.5 2

18 18 5.0 250-500 4.5 2 170-800 4.5 2

18 18 5.0 250-500 4.5 2 170-800 4.5 2

60 40 6.0

50-150

1 10

50-200 10 1

60 40 6.0 100-300

1

10 100-400

10

1

40 40 5.0

50-150

1 10

50-200 10 1

40 40 5.0 100-300

1

10 100-400 10

1

30 12 3.0

30

10 4

30 12 3.0

20

10 4

30 12 3.0

20

10 4

60 30 5.0 60 30 5.0 60 40 5.0 60 40 5.0 60 30 5.0 60 40 5.0

40-120 100-300
40-120 100-300
75-150 75-150

10 150 10 150 10 150 10 150 10 150 10 150

"'All devices are in a T0-18 type epoxy package.

CASE 42

VcE@ le

ft

Cob Vee VcE (SAT) le

IB

Po

MHz

pf

VOLTS VOLTS mA mA mW

4.5-12 10

4.5-12 10

.30

50

.30

50

5.0 10

5.0 10 4.5-12 10 4.5-12 10 4.5-12 10 4.5-12 10

4.5-12 10 4.5-12 4.5-10 10
4.5-10 10
4.5-10 10

4.5-10 10 4.5-10 10 4.5-10 10 4.5-10 10 4.5-10 10

4.5-10 10

4.5-10 10

.30

50

.30

50

600-1500

1.7 10

400-1200 40-240
40-240
300 300

3.5 10 4.0 5.0
25 10 6.0 10 6.0 10

.30

20

1.0 100

.25

10

.25

10

200

200

3

200

3

200

200

200 200
200 200
200

200 200 200
200
200

200 200
200 200
200

200

200

3

360

3

360

200

2

200

200

10 300

1

200

1

200

300

6.0 10

100

20 10

100

10 10

250

8.0 10

250

8.0 10

200

8.0 10

200

8.0 10

700-2100 .8-1.7 10

700-2100 .8-1.7 10

200-500

.5-3.5 10

200-500 100 100 100 100

.5-3.5 10 12 10
12 10 12 10 12 10

.25

10

1.0 300

1.0 300

.22 150

.22 150

.25

50

.25

50

.70

10

.70

10

.25

50

.25

50

.60 100

.80 100

1

200

30 300

30 300

15 350

15 350

2.5 300 2.5 300
200 200 200

1

200

5

300

5

300

5

360

5

360

100

12 10 1.0 100

5

360

1.0

10

5

250

1.0

10

5

250

1.0

10

5

250

1.0

10

5

250

1.0

10

5

250

4.5-12 10

200

100-600

10

10

.40

10

1

250

100-600

10

10

.40

10

1

250

200-800

3.5 10 .25

2

2

250

200-500* 2.5-5

20

300

60-230

2-4

10

200

90-250

2-4

10

200

126-290

2-4

10

200

90-250

2-4

10

200

90-250

2-4

10

200

90-250

2-4

10

200

4.5-12 10

200

4.5-12 10

200

250

4 .0

5.0 .30

50

5

310

300

4 .0

5.0 .30

50

5

310

200

4.5 5.0 .40

50

5

310

250

4.5 5.0 .40

50

5

310

500-1800 .7-1.6 10

200

400-1800 .7-1.6 10

200

300-1800 .7-2.2 10

200

250

8.0

10 .40 150

15 300

250

8.0

10 .40 150

15 300

200

8.0 10 .40 150

15 300

200

8.0

10 .40 150

15 300

250

8.0

10 .40 150

15 300

200

8.0 10 .40 150

15 300

SEE PAGE 25 FOR CASE DRAWINGS

15

GERMANIUM DIODES

GERMANIUM FAST RECOVERY DIODES

TYPE (@ 25°C)

MIN. PIV (Volt)

MINIMUM FORWARD CURRENT
(mA) @+1.0 VOLT

MAXIMUM REVERSE CURRENT

J l T J IR@VR
(µ.a) (V)

IR @ VR @ TEMP. (1.ta) (V) (OC)

1N60

30

1 N191

90

1N192

70

1N276 100

1N480

90

1N490

90

1N631

90

1N770

25

1N777

70

1N994

8

1N995

15

1N996

25

1N3203 40

1N3467 15

1N3468 15

5.0 5.0 40 5.0
5.0
15mA @0.5V
100 10
lOmA @.5v 40mA @.av 35mA @.5V 20mA @.5v 20mA @.5V

67

10

25 10, 55°C 125 50 55

25 10, 55°C 250

50

55

100 50 100 10 75

50 20,60°C 125

50

60

100 20,60°C 250

50

60

20

10 120 60

40

10 40

25 10, 55°C 125 50 55

30

6

10

6

15

15

50

25 20

15

10

60

10

5

55

1 N3592

30

2mA@ .35V 15mA@ .5V

4

4.5 20

20

1N3666 80

200mA .5-1.0V

10 25

20 50

150

20

70

1 N3773

25

2mA@ .35V 15mA@ .5V

4

3

20

20

1N4008 25

lOmA @.5V

100 20 25

12 45

1 N4381

25

2mA .25-.35V

100 20

2

3

DR211

75

DR362

50

DR401

60

DR402

60

DR403

60

200
100 20mA @.5V 20mA @.5V 20mA @.5V

100 50

50

20

25 10, 50°C 125 50

50

50 10,5o0 c 250

50

50

20

10 100 50

DR404 DR407 DR408 DR419 DR422

60 75 60 25,55°C 75

20mA @.5V
5.0
200 lOmA @.5V
50

20

10 100 50

12

6

20

10 55

20

10 100 50

20

3

300 50

DR437

75

DR459

15

DR481

40

DR482

60

DR498

20

40mA @.5V lOmA @.5V
100
100 lOmA @ .37V

20 4, 55°C 50

200 10

200 20

20

40

10

10

10 55

DRSOO

50

GD400

15

GD401

15

GD402

45

GD403

35

20 lOmA @ .5V
lOmA @.5V
lOmA @ .5V
lOmA @.5V

12.5 25

3

5

5

5

5

10 15

30

10

10

GD404

35

GD405

35

GD406

60

GD407

50

GD408

75

lOmA @.5V lOmA @.5V
lOmA @.5V lOmA @ .5V
lOmA @ .5V

6

10 10

20

10

10 40

20

5

10 20

30

10

10 30

30

6

10 50

50

GD409

60

GD410 135

GD411 100

lOmA @ .5V
lOmA @.5V lOmA @.5V

10

10 100 50

30

40 65

40

100 100 100 80

CASE 35

REVERSE RECOVERY

J J IF

IR

VR

(mA) (mA) (Volts)

LEVEL I
(KQ)

LIMIT nsec

LEVEL II
(KQ)

LIMIT nsec

REVERSE RECOVERY CIRCUIT

5

1.0

00

80

30

35 50 500 400 3500

30

35 50 500 200 3500

5

40 80 300

30

35 50 500 400 3500

Tektronix "S" Unit IBM-Y Ckt IBM-Y Ckt
JAN 256 JAN 256

30

35 50 500 200 3500

JAN 256

Fwd. Recovery @ 50mA; lOOKC <3.5 Volts

5

10 15 350 50 700

IBM-Y Ckt

30

40 '!iO 500 400 3500

IBM-Y Ckt

10

6

2

2

Sampling Scope

10

6

2

6

5

10 20 300

20

4

16 300

10

6

1

2

10

6

1

2

Sampling Scope JAN 256 IBM-Y Ckt Sampling Scope Sampling Scope

2

0.2

00

40

30

10 20 300

2

0.2

00

40

10

1.0

00

70

2

0.2

00

100

5

40 50 300

40

10 20 300

30

35 50 500 400 2000

30

35 50 500 200 2000

5

40 80 300

Tektronix "S" Unit JAN 256 Tektronix "S" Unit Tektronix "S" Unit Tektronix "S" Unit
JAN 256 JAN 256 IBM-Y Ckt IBM-Y Ckt IBM-Y Ckt

5

40 50 300

5

10 50 500 500 3500

5

40 80 300

30

5

25 1000

5

40 50 3000

30

10 10 500 50 2000

5

6

20 200

5

20 50 1000

25

35 40 400

5

20 40 300

5 10 10 10 2.0 10 2.0

40 500 500

6

2.0 10

6

2.0 10

00

80

00

80

IBM-Y Ckt JAN 256 IBM-Y Ckt JAN 256 JAN 256
JAN 256
JAN 256 JAN 256 JAN 256 JAN 256
JAN 256 Sampling Scope
Sampling Scope
Tektronix "S" Unit
Tektronix "S" Unit

10 2.0

00

60

10 2.0

00

60

10 2.0

00

125

10 2.0

00

125

30

35 50 400

Tektronix "S" Unit Tektronix "S" Unit Tektronix "S" Unit Tektronix "S" Unit JAN 256

30

35 50 400

30

35 50 750

30

35 50 750

JAN 256 JAN 256 JAN 256

OPERATING TEMPERATURE
STORAGE TEMPERATURE
LEAD TEMPERATURE }16" ± X2"
FROM CASE FOR 10 SECONDS

ABSOLUTE MAXIMUM RATINGS FOR ALL TYPES

-65°C to + 90°C l00°C 230°C

SURGE CURRENT (ONE SEC) CONT. POWER DISSIPATION @ 25 °C DERATING FACTOR AVERAGE RECTIFIED CURRENT

400mA BOmW
lOmWI l0°C ABOVE 25°C
50mA (Typ.)

16

SEE PAGE 25 FOR CASE DRAWINGS

GERMANIUM DIODES

MEDIUM VOUAGE GERMANIUM DIODES

CASE 35

TYPE (@ 25°C)
1N34A 1N48 1 N51 1N54 1N54A
1N56A 1N66 1N69 1N69A 1N90
1N95 1N96 1N96A 1N108 1 N116
1N117 1 N118 1 N118A 1 N126 1 N128
1 N281 1N287 1N288 1N289 1N292
1N294 1N294A 1N295 1N298A
1N498
1N499 1N500 1N632 1N636 1N772
1N772A 1N773
1N773A
1N774
1N774A
1N775
1N909
1 N3465 1 N3753 1 N3769
DR128 DR207 DR213 DR283 DR291 DR295
DR302 DR303 DR307 DR308 DR309 DR313 DR314 DR317 DR318
DR319 DR323 DR324 DR325 DR326
DR328 DR329 DR330 DR338 DR351
DR352
DR366 DR385
DR389 DR463

MIN. PIV (Volt)
75 85 50 85 75
50 60 75 75 75
75 75 75 65 75
75 75 75 75 50
75 60 85 85 75
70 70 50 85
60
75 80 90 60 80
80 75
75
70
70

MINIMUM FORWARD CURRENT
@ +(1m.0A)VOLT
5.0 4.0 4.0 4.0 5.0
15 5.0 5.0 5.0 5.0
10 20 40 50 5.0
10 20 40 5.0 3.0
100 20 40 20 100
5.0 5.0
-
30mA @ 2.0 Volts
100
100 100 7.0 2.5 100
200 100
200
100
200

70

100

60

lOmA

0.35-0.37

60

200

55

150

90

25mA

@ 0.5 Volts

60

40

75

20

75

100

75

100

60

50

60

lmA

@ 0.35 Volts

80

400

60

400

60

200

80

200

80

400

80

100

80

100

80

50

60

50

60

50

80

100

80

100

60

100

60

100

80

300

60

300

80

300

75

40

50

200

50

lOmA

@ 0.35 Volts

75

50

50

lOmA

@ 0.37 Volts

60

200

85

300

MAXIMUM REVERSE CURRENT

IR @YR

IR @ VR@TEMP.

J (µa) (V) I I (µa) I (V) coc)

30

10 500 50

833 50

1677 50

150 50

7

10 100 50

300 30

50

10 800 50

850 50 50 10

500 50 30 10

800 50

800 50 800 50 500 50 200 50 100 50

100 50

100 50

100 50

50

10 850 50

10

10

30

10 500 50

1500 50

350 50

50

50

200 50

10

10 800 50

10

10 800 50

200 10

250 40 50

25

40

30

50

40

60

20

10 120 60

10

10

50

50 500 80

50

50 500 80

10

10 100 50

500 75

10

10 100 50

500 75

15

10 150 50

500 70

15

10 150 50

500 70

20

10 250 50

500 70

10

10

20 45

5

10

5

5

20 65

100 50

50

50

20

50

2

10

100 25

4

2

50 50

100 50

50

50

50

20

10

10 50 50

10

10 50 50

2

10 20 50

50

50

50

50

2

10

5

10

200 50 75

500 50 75

75

10 250 50

250 50

100 50

50

20

10

10 50

50

100 50

1500 30 50

300 30 50

100 50

10

10

50

50

100 10 500 50

HIGH VOLTAGE GERMANIUM DIODES

CASE 35

TYPE (@ 25°C)
1N34 1N38 1N38A 1N55 1N55A
1N55B 1N57 1N58 1N58A 1 N61
1N62 1N63 1N67 1N67A 1N68
1N68A 1N70 1N88 1N89 1N97
1N98 1N98A 1N99 1 N100 1 N100A
1 N102 1 N127 1 N198
1N270 1N277
1N290 1 N291 1N297 1 N310 1 N313
1 N501 1N502 1N633 1N634 1 N771
1N771A 1 N771 B DR209 DR272 DR292
DR301 DR304 DR305 DR306 DR310
DR311 DR312 DR315 DR316 DR321
DR327 DR336 DR337 DR379

MIN. PIV (Volt)
100 120 120 170 170
190 100 115 120 140
120 125 100 100 120
130 100 110 100 100
100 100 100 100 100
125 125 100
100 120
120 120 100 130 125
100 120 120 115 100
100 100 125 150 120
100 190 100 100 120
120 100 120 100 100
100 120 100 150

MINIMUM FORWARD CURRENT
@ +(1m.0A)VOLT
8.5 4.0 4.0 3.0 4.0
5.0 3.6 5.0 4.0 5.0
5.0 4.0 4.0 4.0 3.0
3.0 3.0 2.5 3.5 10
20 40 10 20 40
15 3.0 4.0
200 100
5.0 40 3.5 40 40
100 100 125 50 100
200 400 40 400 4.0
400 200 200 200 100
100 100 50 50 200
300 4.0 40 200

MAXIMUM REVERSE CURRENT

T I l l IR @YR

(µa)

(V)

IR @YR@ TEMP. (µa) (V) (OC)

15

10 800 50

6

3 500 100

6

3 500 100

300 100 800 150

500 150

500 150 300 75 800 100 600 100 300 100 700 125

50

50

5

5

50

5

5

50

625 100

625 100

25

10 300

100 50

8

5 100

8

5 100

8

5 100

8

5 100

5

5

50

5

5

50

5

5

50

3

25

25

10 300

10

10 250

50

50

100 50

75 10, 75°C

100 100

100 100

10

5 100

20

20 100

10

20

40

80

50 100

40

20 180

45

45 100

25

50 500

25

50 500

25

50 500

100 100

20 100

200 100

100 50 500 150 100 50 100 50 50 100

100 100

5

10 20

50 100

100 100

125

100 50

8

5 100

5

5

50

50

50 50
50 50 50 50 50 50 50 50 50 50 75
50 100
90 100 100 100 100
100 50 75 50 50 20 50

LOW VOLTAGE GERMANIUM DIODES

CASE 35

TYPE (@ 25°C)
1N56 1N64 1N107 1N279 1N308 1N309 1N497 1N776 1 N910
1 N911
1N3466 1N4502
DR365 DR427
DR434
DR435 DR464

MIN. PIV (Volt)

MINIMUM FORWARD CURRENT
(mA)
@ +1.0 VOLT

40 20 15 40 10 40 30 30 40
30
40 20,55°C
20 20
30
20 12

-15
150 100 300
100 100 50 lOmA 0.35-0.37 lOmA 0.34-0.37
200 3mA 0.3 Volts lOmA 0.4 Volts 50
lOmA 0.37 Volts
lOmA 0.37 Volts
50

MAXIMUM REVERSE CURRENT

IR @YR

IR @ YR @ TEMP.

<µa> 1 cv> T <µa> T cv> I c·c>

300 30 100 10 200 10 200 20 500 8 100 20 20 20 200 10 500 30 10 10

10 10

15 30

10

6

80

6 55

60

6

500 10

10 10

10 10 100 5

SEE PAGE 25 FOR CASE DRAWINGS

17

SOLID STA TE ASSEMBLIES

General Instrument maintains complete facilities for design fabrication and testing of virtually any type of solid state assembly ... and at prices that can save substantial sums for the user who may be faced with a heavy investment to produce these assemblies "in house." You will find examples of G/'s capability in the wide range of standard devices shown here.
HIGH VOLTAGE RECTIFIER CARTRIDGES
· HIGH TEMPERATURE TYPES
Data Sheet No. RBl 163 Type 1N1731A·1N1734A,
1N2382A to 1N2384A PRV 1.5 kV to 10 kV 10 to 350 mA
· GENERAL PURPOSE TYPES
Data Sheet No. RBl 152 I-Pigtail 2-Ferrule 3-Fuse Clip Mounting All styles - PRV lkV to 30 kV 10 to 350 mA
· FAST SWITCHING TYPES
To 50 KC All Styles PRV lkV to 10 kV 10 to 300 mA Consult factory for data sheet.

HIGH VOLTAGE RECTIFIER BLOCKS
· GLASS-AMP HV BLOCKS
Featuring Controlled Avalanche Design PRV lkV to 18 kV 10 to 1.0 Amperes Data Sheet No. RBl 165
SOLID STATE TUBE REPLACEMENTS
1N1262 4.8 Volt Tube Replacement
1N570/6X4 Tube Replacement
PRV 1500 V @ 75 mA FW PRV 25,000 V @ 500 mA HW All intermediate types - Data Sheet SPR 3
KILOPOTENTIAL RECTIFIERS
· R-C COMPENSATED ASSEMBLIES
Standard Puck Modules Custom Board Assemblies

· MINIATURE TYPES
PRV to 10 kV 10 to 100 mA Consu It factory for data sheet.
18

PRY 20 to 200 kV
lo to 150 mA Data Sheet No. RB3'002·1
lo to 300 mA Data Sheet No. RB3002·2

PRV 20 to 200 kV oil immersed lo to 1.0 Amperes
Consult Factory for data sheet

GENERAL PURPOSE RECTIFIER ASSEMBLIES
,~
· 1.5 AMP FULL WAVE RECTIFIERS

~/

· 3.0 AMP FULL WAVE RECTIFIERS - STUD TYPE

aSingle Phase Bridge

Center Tap & Doubler

I Center Tap & Doubler

Single Phase Bridge

· 1.5 AMP TO 9.0 AMP OPEN FIN ASSEMBLIES
All Configurations shown on Data Sheet No. RB1176

CUSTOM SOLID STATE ASSEMBLIES

G. I. offers a complete custom packaging facility including: · Custom molding of shell and welded devices · Component interconnection by welding and soldering · Specialized test facilities

Zener Diodes & Controlled Forward Diodes

Modulator Bridge & Ring Assemblies

Matched Pair Modules

r-,

I~ I

I I

,ll!,i.J,

I I

Logic Gates

I I l~I

Limiters

19

SELENIUM RECTIFIER ASSEMBLIES

TRI-AMP POWER ASSEMBLIES
General Instrument Tri-Amp Selenium Power Rectifier Assemblies are completely unaffected by aging - a unique advantage which brings to the user reliability previously considered unattainable. In addition, they incorporate a true P-N diffused junction and safely withstand large transients.
Standard Power Assemblies use cells manufactured with the Tri-Amp process. As shown in the life test curve, Tri-Amp does not age!
LIFE CURVE PERCENT CHANGE IN FORWARD VOLTAGE DROP
~]1~ 1~ ~r-~1

0

1000

10,000

100,000

TIME IN HOURS

· A COMPLETE RANGE OF ASSEMBLIES ARE AVAILABLE FOR EVERY APPLICATION

Typical Units:
Three Phase Bridge For Elevator Control Panel. 260 V. AC 3.3 A. DC.

Center Tap Fast Battery Charger using Heat Sink Backing Plate. 26 V. AC 100 A. DC. Fan Cooled.
Single Phase Bridge with Special Edge Protection for unusual moisture and vibration conditions. 26 V. AC lOA. DC.
Single Phase Bridge Typical Cathodic Protection Unit. 26 V. AC 24 A. DC.

Three Phase Bridge Welding Stack 78 V. AC 400 A. DC. Fan Cooled.
NOTE: For detailed information, see Tri-Amp Bulletin No. RB2010A.

LOW COST MINIATURE BRIDGE ASSEMBLIES
Ideal for use in control equipment, AC-DC motors, and small battery chargers. These miniature assemblies are available in bridge, doubler and center-tap configuratior:s.
NOTE: All Miniature Bridge Assembly photos are actual size.

· LOW VOLTAGE

RMS = 26V Max.
PRV = 50V Max.

NCB-100 100 mA

DCBS-100

NCB-300 300 mA
See Bulletin No. RB-2019.
· LINE VOLTAGE

TLB-1 125 rnA

TLB-2 125 mA

150 mA

100 mA
RMS = 260V Max.

See Bulletin No. RB2015A

ASSEMBLIES FOR RADIO AND TV APPLICATIONS
· RADIO/PHONO
Voltage-380V PRV 130 RMS

General Instrument Selenium Assemblies have accumulated millions of hours of reliable performance in home entertainment products throughout the world. This "extra" quality is something you get free everytime you specify GI.

Gl65N 65 mA DC

See Bulletin No. RB-2017

· COLOR TELEVISION

a:;i1111111!illi!;\r- . . . - · · - · - · - - - _...,.._..~

___..

800 PRV Boost Rectifier

· TRANSISTORIZED TELEVISION

11GA300 300 mA DC

16GA500 500 mA DC

TVC 3 4 Diode Convergence Rectifier

~ ~---------··
~·~~-·,'·'·''"'
6500 PRV Focus Cartridge

HIGH VOLTAGE INDUSTRIAL CARTRIDGES
PRV 1 through 25 KV DC Current .4 to 30 mA See Bulletin No. RB-2002A
CUSTOM MINIATURE ASSEMBLIES
4 Diodes with 1 Common Electrode
PRV to 50 V DC Current to 150 mA

LOW COST- LOW VOLTAGE DIODES
An ideal answer to your high volume, mass production requirements where economy as well as dependability are maior considerations.
ZIP DIODE PRV to 50V DC Current to 150 mA See Bulletin No. RB-2020

ERMS = 26 Max. Ide = 500 mA

ERMS = 130V Max. Ide = 125 mA
21

t
i NUMERICAL INDEX
i

PRODUCT FAMILY IDENTIFICATION CODES

cs CAPSIL® Voltage Variable Capacitor Diode GD Germanium Diode GR Glass-Amp® Sil icon Rectifier GT Germanium Transistor GZ Glass-Amp® Zener Voltage Regulator Diode MC Microcircuit

MD Micro Diode MOS MOS Microcircuit RB Rectifier Bridge (Selenium) SB Stabistor SD Silicon Diode SR Sil icon Rectifier

Type No.
1N34 1N34A 1N38 1N38A 1N48
1N51 1N54 1N54A 1N55 1N55A
1N55B 1N56 1N56A 1N57 1N58
1N58A 1N60 1N61 1N62 1N63
1N64 1N66 1N67 1N67A 1N68
1N68A 1N69 1N69A 1N70 1N88
1N89 1N90 1N95 1N96 1N96A
1N97 1N98 1N98A 1N99 1N100
1N100A 1N102 1N107 1N108 1N116
1N117 1N118 1N118A 1N126 1N127
1N128 1N191 1N192 1N198 1N225
1N226 1N227 1N228 1N229 1N230
1N231 1N232 1N233 1N234 1N235
1N236 1N237 1N238 1N239 1N253
1N254 1N255 1N256 1N270 1N276
1N277 1N279 1N281 1N287 1N288
1N289 1N290 1N291 1N292 1N294
1N294A 1N295 1N297 1N298A 1N308

Prod. Page Code No.
GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 16 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 16 GD 16 GD 17 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 SR 8 SR 8 SR 8 SR 8 GD 17 GD 16 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17

Type No.
1N309 1N310 1N313 1N332 1N333
1N334 1N335 1N336 1N337 1N338
1N339 1N340 1N341 1N342 1N343
1N344 1N345 1N346 1N347 1N348
1N349 1N440 1 N4408 1N441 1N441B
1N442 1N4428 1N443 1N443B 1N444
1N4448 1N445 1N445B 1N456 1N456A
1N457 1N457A 1N458 1N458A 1N459
1N459A 1N461 1N461A 1N462 1N462A
1N463 1N463A 1N464 1N464A 1N465
1N466 1N467 1N468 1N469 1N470
1N471 1N472 1N473 1N474 1N475
1N480 1N482 1N482A 1N482B 1N483
1N483A 1N483B 1N484 1N484A 1N484B
1N485 1N485A 1N485B 1N486 1N486A
1N486B 1N487 1N487A 1N488 1N488A
1N490 1N497 1N498 1N499 1N500
1N501 1N502 1N530 1N531 1N532

Prod. Page Code No.
GD 17 GD 17 GD 17 SR 8 SR 8 SR 8 SR 8 SR 8 SR 8 SR 8 SR 8 SR 8 SR 8 SR 8 SR 8 SR 8 SR 8 SR 8 SR 8 SR 8 SR 8 SR 6 SR 6 SR 6 SR 6 SR 6 SR 6 SR 6 SR 6 SR 6 SR 6 SR 6 SR 6 SD 8 SD 8 SD 8 SD 8 SD 8 SD 8 SD 8 SD 8 SD 8 SD 8 SD 8 SD 8 SD 8 SD 8 SD 8 SD 8 KZD 11 KZD 11 KZD 11 KZD 11 KZD 11 KZD 11 KZD 11 KZD 11 KZD 11 KZD 11 KZD 11 GD 16 SD 8 SD 8 SD 8 SD 8 SD 8 SD 8 SD 8 SD 8 SD 8 SD 8 SD 8 SD 8 SD 8 SD 8 SD 9 SD 9 SD 9 SD 9 SD 9 GD 16 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 SR 6 SR 6 SR 6

Type No.
1N533 1N534 1N535 1N536 1N537
1N538 1N539 1N540 1N547 1N560
1N561 1N562 1N563 1N570 1N599
1N599A 1N600 1N600A 1N601 1N601A
1N602 1N602A 1N603 1N603A 1N604
1N604A 1N605 1N605A 1N606 1N606A
1N625 1N626 1N627 1N628 1N629
1N631 1N632 1N633 1N634 tN636
1N643 1N643A 1N645 1N646 1N647
1N648 1N649 1N658 1N659 1N660
1N661 1N662 1N663 1N702 1N703
1N704 1N705 1N706 1N707 1N708
1N709 1N710 1N711 1N712 1N713
1N714 1N715 1N716 1N717 1N718
1N719 1N720 1N721 1N722 1N723
1N724 1N725 1N726 1N727 1N728
1N729 rn130 1N731 1N732 1N733
1N734 1N735 1N736 1N737 1N738

Prod. Page Code No.
SR 6 SR 6 SR 6 SR 6 SR 6 SR 6 SR 6 SR 6 SR 6 SR 6 SR 6 SR 8 SR 8 KSR 18 KSR 6 KSR 6 KSR 6 KSR 6 KSR 6 KSR 6 KSR 6 KSR 6 KSR 6 KSR 6 KSR 6 KSR 6 KSR 6 KSR 6 KSR 6 KSR 6 SD 9 SD 9 SD 9 SD 9 SD 9 GD 16 GD 17 GD 17 GD 17 GD 17 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11

ST Silicon Transistor STE Epoxy Silicon Transistor TR Tube Replacement ZD Zener Voltage Regulator Diode K- Before product identification code indicates
encapsulated assembly or epoxy package.

Type No.
1N739 1N740 1N741 1N742 1N743
1N744 1N745 1N746 1N747 1N748
1N749 1N750 1N751 1N752 1N753
1N754 1N755 1N756 1N757 1N758
1N759 1N761 1N762 1N763 1N764
1N765 1N766 1N767 1N768 1N769
1N770 1N771 1N771A 1N771B 1N772
1N772A 1N773 1N773A 1N774 1N774A
1N775 1N776 1N777 1N789 1N790
1N791 1N792 1N793 1N794 1N795
1N796 1N797 1N798 1N799 1N800
1N801 1N802 1N803 1N804 1N881
1N882 1N883 1N884 1N885 1N886
1N887 1N888 1N889 1N890 1N891
1N892 1N893 1N909 1N910 1N911
1N954 1N955 1N957 1N958 1N959
1N960 1N961 1N962 1N963 1N964
1N965 1N966 1N967 1N968 1N969

Prod. Page Code No.
ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11
ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 GD 16 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 17 GD 16 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 SD 9 GD 17 GD 17 GD 17
cs 10 cs 10 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11
ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11

Type No.
1N970 1N971 1N972 1N973 1N974
1N975 1N976 1N977 1N978 1N979
1N980 1N981 1N982 1N983 1N984
1N985 1N986 1N987 1N988 1N989
1N990 1N991 1N992 1N994 1N995
1N996 1N1095 1N1097 1N1100 1N1101
1N1102 1N1103 1N1104 1N1105 1N1169
1N1262 1N1692 1N1693 1N1694 1N1695
1N1696 1N1697 1N1731A 1N1732A 1N1733A
1N1734A 1N1763 1N1764 1N2026 1N2027
1N2028 1N2029 1N2030 1 N2031 1N2069
1N2070 1N2071 1N2382A 1N2383A 1N2384A
1N2610 1N2611 1N2612 1N2613 1N2614
1N2615 1N2616 1N2617 1N30.21 1N3022
1N3G23 1N3024 1N3025 1N3026 1 N3027
1N3028 1N3029 1N3030 1N3031 1N3032
1N3033 1N3034 1N3035 1N3036 1N3037
1N3038 1N3039 1N3040 1N3041 1N3042

Prod. Page Code No.
ZD 11 ZD 11 ZD 11 ZD 11 ZD 11
ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 ZD 11 GD 16 GD 16 GD 16 SR 6 SR 6 SR 6 SR 6 SR 6 SR 6 SR 6 SR 6 KTR 6 KTR 18 SR 6 SR 6 SR 6 SR 6 SR 6 SR 6 KSR 18 KSR 18 KSR 18 KSR 18 SR 6 SR 6 SR 8 SR 8 SR 8 SR 8 SR 8 SR 8 SR 7 SR 7 SR 7 KSR 18 KSR 18 KSR 18 SR 7 SR 7 SR 7 SR 7 SR 7 SR 7 SR 7 SR 7 ZD 12 ZD 12 ZD 12 ZD 12 ZD 12 ZD 12 ZD 12 ZD 12 ZD 12 ZD 12 ZD 12 ZD 12 ZD 12 ZD 12 ZD 12 ZD 12 ZD 12 ZD 12 ZD 12 ZD 30 ZD 12 ZD 12

22

t

'

,

I '

Type No.

Prod. Page Code No.

Type No.

1N3043 1N3044 1N3045 1N3046 1N3047

ZD 12 ZD 12 ZD 12 ZD 12 ZD 12

2N444A 2N445A 2N446A 2N447A 2N464

1N3048 1N3049 1N3050 1N3051 1N3189

ZD 12 ZD 12 ZD 12 ZD 12 SR 7

2N465 2N466 2N467 2N519A
2N520A

1N3190 1N3191 1N3203 1N3465 1N3466

SR 7 SR 7
GD 16 GD 17 GD 17

2N521A 2N522A 2N523A 2N579 2N580

1N3467 1N3468 1N3477 1N3488 1N3592
1N3628 1N3666 1N3753 1N3769 1N3773
1N3945 1N3946 1N3947 1N4008 1N4162

GD 16

GD 16

cZDs

11 10

GD 16

cs 10

GD 16

GD 17

GD 17

GD 16

cccsss

10 10 10

GD 16

GZ 12

2N585 2N594 2N595 2N596 "2N597
2N598 2N599 2N600 2N601 2N696
2N697 2N698 2N699 2N706 2N706A

1 N4163 1N4164
1N4165 1N4166 1N4167

GZ 12 GZ 12 GZ 12
GZ 12 GZ 12

2N7068 2N70.8 2N718 2N718A 2N721

1N4168 1N4169 1N4170 1N4171
1N4172

GZ 12 GZ 12 GZ 12 GZ 12 GZ 12

2N722 2N743 2N744 2N753 2N759

1N4173 1N4174 1N4175 1N4176 1N4177

GZ 12 GZ 12 GZ 12 GZ 12
GZ 12

2N759A 2N760 2N760A 2N834 2N835

1N4178 1N4179 1N4180 1N4181 1N4182

GZ 12 GZ 12 GZ 12 GZ 12 GZ 12

2N914 2N929 2N929A 2N930 2N930A

1N4183 1N4184 1N4185 1N4186 1N4187

GZ 12 GZ 12 GZ 12
GZ 12 GZ 12

2N1131 2N1132 2N1306 2N1307 2N1310

1N4188 1N4189 1N4190 1N4191 1N4192

GZ 12 GZ 12 GZ 12 GZ 12 GZ 12

2N1311 2N1312 2N1408 2N1613 2N1711

1N4193 1N4250 1N4251 1N4252
1N4253

GZ 12 GR 7 GR 7 GR 7 GR 7

2N1893 2N2192 2N2192A 2N2192B 2N2193

1N4254 tN4255 1N4256 1N4257 tN4381

GR 7 GR 7 GR 7 GR 7 GD 16

2N2193A 2N21938 2N2217 2N22t8 2N22t8A

t N4383(G1 DOD) GR 7

t N4384(G1 DOG) GR 7

1N4385(GtOOJ) GR 7

1N4502

GD 17

1N4585(G100K) GR 7

2N22t9 2N2219A 2N2220 2N222t
2N222tA

t N4586(Gt DOM) GR 7

2N2222

1N5055

SR 7

2N2222A

1N5056

SR 7

2N2303

"t

1N5057

SR 7

2N2368

1N5058

SR 7

2N2369

11GA300 11GA500 2N315A 2N316 2N316A

KSR 21 KSR 21
GT 13
GT 13
GT 13

2N2369A 2N2483 2N2484 2N2501
2N2537

2N331 2N356 2N356A 2N357A 2N358

GT 13 GT 13 GT 13 GT 13 GT 13

2N2538 2N2539 2N2540 2N2648 2N27tt

2N358A 2N377A 2N388A 2N396A 2N398A

GT 13 GT 13 GT 13 GT 13
GT 13

2N2712 2N2713 2N2714 2N27t5 2N27t6

2N404 2N404A 2N438A 2N439A 2N440A

GT 13 GT 13 GT 13 GT 13 GT 13

2N2837 2N2838 2N2904 2N2904A 2N2905

Prod. Page Code No.
GT 13 GT 13 GT 13 GT 13 GT 13
GT 13 GT 13 GT 13 GT 13 GT 13
GT 13 GT 13 GT 13 GT 13 GT 13
GT 13 GT 13 GT 13 GT 13 GT 13
GT 13 GT 13 GT 13 GT 13 ST 14
ST 14 ST 14 ST 14 ST 14 ST 14
ST 14 ST 14 ST 14 ST 14 ST 14
ST 14 ST 14 ST 14 ST 14 ST 14
ST 14 ST 14 ST 14 ST 14 ST 14
ST 14 ST 14 ST 14 ST 14 ST 14
ST 14 ST 14 GT 13 GT 13 GT 13
GT 13 GT 13 GT 13 ST 14 ST 14
ST 14 ST 14 ST 14 ST 14 ST 14
ST 14 ST 14 ST 14 ST 14 ST 14
ST 14 ST 14 ST 14 ST 14 ST 14
ST 14 ST 14 ST 14 ST 14 ST 14
ST 14 ST 14 ST 14 ST 14 ST 14
ST 14 ST 14 ST 14 GT 13 STE 15
STE 15 STE 15 STE 15 STE 15 STE 15
ST 14 ST 14 ST 14 ST 14 ST 14

Type No.
2N2905A 2N2906 2N2906A 2N2907 2N2907A
2N2921 2N2922 2N2923 2N2924 2N2925
2N2926 2N3015 2N3133 2N3134 2N3135
2N3136 2N3252 2N3253 2N3390 2N3391
2N3391A 2N3392 2N3393 2N3394 2NJ395
2NJJ96 2N3397 2N3398 2N3414 2N3416
2N3563 2N3564 2N3565 2N3566 2N3605
2N3606 2N3607 2N3638 2N3638A 2N3641
2N3643 2N3644 2N3645 2N3662 2N3663
2N3691 2N3692 2N3702 2N3703 2N3704
2N3705 2N3706 2N3707 2N3708 2N3709
2N3710 2N3711 2N3721 2N3793 2N3794
2N3825 2N3828 2N3843A 2NJ844A 2N3845A
2N3858 2N3859 2N3860 2N3900 2N3900A
2N3903 2N3904 2N3905 2N3906 2N3983
2N3984 2N3985 2N4140 2N4141 2N4142
2N4143 2N4227 2N4228 AG1000 AG100G
AG100J CS7 CStO CS12 CS15
CS20 CS27 CS30 CS33 CS40
CS47 CS56 CS68 CS82 CS100

Prod. Page Code No.

ST 14 ST 14 ST 14 ST 14 ST 14

STE 15 STE 15 STE 15 STE 15 STE 15

STE 15 ST 14 ST 14
ST 14 ST 14

ST 14 ST 14
ST 14 STE 15 STE 15

STE 15 STE 15 STE 15 STE 15 STE 15

STE 15 STE 15 STE 15 STE 15 STE 15

STE 15 STE 15 STE 15 STE 15 STE 15

STE 15 STE 15 STE 15
STE 15 STE 15

STE 15
STE 15 STE 15 STE 15 STE 15

STE 15 STE 15 STE 15 STE 15
STE 15

STE 15 STE 15 STE 15 STE 15 STE 15

STE 15 STE 15 STE 15 STE 15
STE 15

STE 15 STE 15
STE 15 STE 15 STE 15

STE 15 STE 15 STE 15 STE 15 STE 15

STE 15 STE 15 STE 15 STE 15 STE 15

STE 15 STE 15 STE 15
STE 15 STE 15

STE 15 STE 15 STE 15 GR 7 GR 7

GccccRssss

7 10 10 10 10

cccccsssss

10 10
10 10 10

cccccsssss

10 10 10 10 10

Type No.
OCBSlOOJ 06100J 06100K 06100M OR128
OR207 OR209 OR211 OR213 DR272
DR283 OR291 OR292 OR295 OR301
OR302 OR303 OR304 OR305 OR306
OR307 ORJOB OR309 OR310 OR311
OR312 OR313 OR314 OR315 OR316
OR317 ORJ18 ORJ19 OR321 OR323
OR324 OR325 OR326 OR327 ORJ28
OR329 OR330 OR336 OR337 OR338
OR351 OR352 OR362 OR365 OR366
OR379 OR385 OR389 OR401 OR402
OR403 OR404 OR407 OR408 OR419
DR422 OR427 OR434 DR435 DR437
OR459 OR463 OR464 OR481 DR482
OR498 ORSOO E6100
60400 60401 60402 60403 60404
60405 60406 G0407 604()8 60409
G0410 60411 Gl65N GP101A GPtOtB
6P102A GP102B GP103A GP1038 GP104A
GP104B GPt05A GP105B KG100F KG100G KGtOOH

Prod. Page Code No.
KSR 20 GR 7 GR 7 GR 7 GD 17
GD 17 GD 17 GD 16 GD 17 GD 17
GD 17 GD 17 GD 17 GD 17 GD 17
GD 17 GD 17 GD 17 GD 17 GD 17
GD 17 GD 17 GD 17 GD 17 GD 17
GD 17 GD 17 GD 17 GD 17 GD 17
GD 17 GD 17 GD 17 GD 17 GD 17
GD 17 GD 17 GD 17 GD 17 GD 17
GD 17 GD 17 GD 17 GD 17 GD 17
GD 17 GD 17 GD 16 GD 17 GD 17
GD 17 GD 17 GD 17 GD 16 GD 16
GD 16 GD 16 GD 16 GD 16 GD 16
GD 16 GD 17 GD 17 GD 17 GD 16
GD 16 GD 17 GD 17 GD 16 GD 16
GD 16 GD 16 GR 7
GD 16 GD 16 GD 16 GD 16 GD 16
GD 16 GD 16 GD 16 GD 16 GD 16
GD 16 GD 16 SD 21 SD 10 SD 10
SD 10 SD 10 SD 10 SD 10 SD 10
SD 10 SD 10 SD 10 SR 7 SR 7 SR 7

Type No.
MEM511 MEM517 MEM517A MEM517B MEM520
MEM550 MEM551 MEM1000 MEM1002 MEM1005
MEM2001 MEM2002 MEM2003 MEM2004 MEM2004A
MEM2005 MEM2006 MEM2007 MEM2008 MEM3020 MEM3021
NCB NC9 NC10 NC11 NC12 NC16 NC17
NC101 NC511 NC513 NCB75 NCB100
NCB300 NCS675A PA300 PA305 PA310
PA315 PA320 PA325 PA330 PA340
PA350 PA380 PCB PC9 PC10
PC11 PC12 PC13 PC14 PC15
PC16 PC17 PC18 PC101 PC200
PC201 PC210 PC212 PC401 PC402
PC501 PC502 PC503 PC504 PC511
PC512 PC513 PC514 PC521 PC523
PC250 PC251 PT505 PT510 PT515
PT520 PT525 PT530 PT540 PT550
PT560 PT580 S9t S91H S92
S92H S93 S93H TLB1 TLB2
TwVoCoJs
W02 W04 W06 XH100

Prod. Page Code No.
MOS 4 MOS 4 MOS 4 MOS 4 MOS 4
MOS 4 MOS 4 MOS 4 MOS 4 MOS 4
MOS 4 MOS 4 MOS 4 MOS 4 MOS 4
MOS 4 MOS 4 MOS 4 MOS 4 MOS 4 MOS 4
MC 5 MC 5 MC 5 MC 5 MC 5 MC 5 MC 5
MC 5 MC 5 MC 5 KSR 20 KSR 20
KSR 20 MC 5 SD 7 SR 7 SR 7
SR 7 SR 7 SR 7 SR 7 SR 7
SR 7 SR 7 MC 5 MC 5 MC 5
MC 5 MC 5 MC 5 MC 5 MC 5
MC 5 MC 5 MC 5 MC 5 MC 5
MC 5 MC 5 MC 5 MC 5 MC 5
MC 5 MC 5 MC 5 MC 5 MC 5
MC 5 MC 5 MC 5 MC 5 MC 5
MC 5 MC 5 SR 6 SR 6 SR 6
SR 6 SR 6 SR 6 SR 6 SR 6
SR 6 SR 6 SR 6 SR 6 SR 6
SR 6 SR 6 SR 6 RB 20 RB 20 KSR 21 SR 9 SR 9 SR 9 SR 9 SD 10
23

AUTHORIZED DISTRIBUTORS

ALABAMA BIRMINGHAM-M .G. Electronics,
(205) FA 8-4525 HUNTSVILLE-Electronic Wholesalers, Inc.
(205) 539-5722 M.G. Electronics, (205) 837-0350
ARIZONA-PHO EN IX R.V. Weatherford Co. , (602) 272-7144
CALIFORNIA-NORTHERN MOUNTAIN VIEW-Avnet Corp., (415) 961-7700
Kierulff Electronics, Inc., (415) 968-6292 OAKLAND-Elmar Electronics, (415) 834-3311 PALO ALTO-Elmar Electronics,
(415) 961-3611
CALIFORNIA-SOUTHERN CULVER CITY-Avnet, (213) 837-7111 INGLEWOOD-Liberty Electronics, Inc.,
(213) OR 8-8111 LOS ANGELES-Kierulff Electronics, Inc.,
(213) 685-5511 SAN DIEGO-Milo of California, Inc.,
(714) BE 2-8951
COLORADO-DENVER Industrial Electronic Sales Co.,
(303) 757-1261
FLORIDA MELBOURNE- Electronic Wholesalers, Inc.,
(305) PA 3-1441
MIAM(3I0-5E)leocxtr6o-n16ic20Wholesalers, Inc.,
GEORGIA-ATLANTA Southeastern Radio Parts Co ., (401) JA 4-7536
ILLINOIS-CHICAGO AREA CHICAGO-Newark Electronics Corp.,
(312) ST 2-2944 FRANKLIN PARK-Avnet Corp., (312) 678-8160 SCHILLER PARK-Pace Electronic
Supplies Inc., (312) 678-6310
INDIANA-INDIANAPOLIS Graham Electronic Supply, Inc.,
(317) ME 4-8486

IOWA-CEDAR RAPIDS Deeco, Inc., (319) EM 5-7551
LOUISIANA-BATON ROUGE Southern Radio Supply Co., (504) 355-0396
MARYLAND-WASHINGTON, D.C. BALTIMORE-Electronic Wholesalers, Inc.
(301) 945-3400 Radio Electric Service Co. of Baltimore, Inc.
(301) LA 9-3835 BETHESDA-Empire Electronics Supply Co .,
(301) OL 6-3300 HYATTSVILLE-Milgray Washington, Inc.,
(301) UN 4-6330 WASHINGTON, D.C.-Electronic
Wholesalers, Inc., (202) 483-5200
MASSACHUSETTS BURLINGTON-Avnet Corp., (617) 272-3060 CAMBRIDGE-R &D Electronics
Supply Co., Inc., (617) UN 8-6644 NEWTON-The Greene-Shaw Co.,
(617) WO 9-8900
MI CH IGAN-KALAMAZOO Electronic Supply Corp., (616) WO 5-1241
MISSOURI KANSAS CITY-Walters Radio Supply Co., Inc.,
(816) 531-7015 UNIVERSITY CITY-Olive Industrial
Electronics, Inc ., (314) VO 3-7800
NEW JERSEY-CAMDEN General Radio Supply, (609) 964-8560
NEW MEXICO-ALBUQUERQUE Electronic Parts Co., Inc ., Albuquerque
(505) 265-8401
NEW YORK (METROPOLITAN AREA) YONKERS-Delburn Electronics,
(914) 423-2800 NEW YORK-Milgray Electronics, Inc.,
(212) YU 9-1600 Terminal Hudson Electronics, Inc.,
(212) CH 3-5200
NEW YORK STATE BINGHAMTON-Stack Industrial Electronics,
(607) RA 3-6326

SALES OFFICES

EASTERN AREA
AREA HEADQUARTERS General Instrument Corporation 235 Passaic St., Newark, N.J. 07104 Tel.: (201) 485-0072 ; TWX: 201-621-8041
General Instrument Corporation 2021 Clinton Ave., W., Huntsville, Ala. 35805 Tel.: (205) 536-9671
General Instrument Corporation 608 Ferry Blvd., Stratford, Conn. 06497 Tel.: (203) 378-2992
General Instrument Corporation 2435 Virginia Ave., N.W., Washington, D.C. 20037 Tel.: (202) 965-3712; TWX: 202-965-0474
General Corporation 1520 Edgewater Drive, Orlando, Fla. Tel.: (305) 241-3384; TWX: 305-275-0424
General Instrument Corporation Southwest Park, Westwood, Mass. 02181 Tel.: (617) 329-1480 ; TWX : 617-326-9332
Harri es-Kershaw 15 Canterbury Lane, East Aurora, N.Y. 14052 Tel.: (716) 652-1221
Henry Reid Associates, Inc. 530 Main Street, Fort Lee, New Jersey Tel.: (201) 944-9323
C. H. Newson Assoc ., Inc. 627 Bethlehem Pike, Philadelphia, Pa. 19118 Tel.: (215) 248-3377

CENTRAL AREA
AREA HEADQUARTERS General Instrument Corporation 6054 W. Touhy Ave. , Chicago, Illinois 60648 Tel.: (312) 774-7800 ; TWX : 312-265-1424
Jerry Vrbik Co. 2818 "A" Ave. , N.E., Cedar Rap ids, Iowa 52402 Tel. : (319) 365-0461 ; TWX: 319-552-7118
G& H Sales 16815 James Couzens Highway, Detroit, Michigan 48235 Tel.: (313) 342-4747
Hamilton, Graydon, Flemmer Inc. Hamilton Rd ., Hopkins, Minn. Tel.: (612) 941-1120 ; TWX : 612-292-4013
Hyde Electronics Co. 5206 Constitution Ave. , N.E., Albuquerque, New Mexi co Tel. : (505) 265-8895
G & H Sales P.O. Box 37416, Cincinnati , Ohio 45237 Tel.: (513) 761-6185 ; TWX: 513-577-1239
G & H Sales P.O. Box 7013, Cranwood Station, Cleveland 28, Ohio Tel.: (212) 621-3242
G& H Sales 137 Lakeview Ave ., Dayton 59, Ohio Tel. : (513) 885-3181

NEW YORK STATE-(Continued) BUFFALO- Summit Distributors,
(716) TT 4-3450
NORTH CAROLINA-WINSTON SALEM Electronic Wholesalers, Inc., (919) 725-8711
OHIO-CINCINNATI Newark-Herrlinger Electronics Corp.,
(513) 421-5282
OKLAHOMA-TULSA Radio, Inc., (918) LU 7-9124
PENNSYLVANIA PHILADELPHIA-Herbach &Rademan, Inc.,
(215) LO 7-4309 Milgray Delaware Valley, Inc., (215) WA 3-2210
TENNESSEE KNOXVILLE-Mcclung Appliances,
(615) 524-1811 NASHVILLE-Electra Distributing Co .,
(615) AL 5-8444
TEXAS ARLINGTON- Beta Electronics, Inc .,
(214) TA 1-1120 DALLAS-Contact Electronics, Inc.,
(214) ME 1-9530 Solid State Electronics, (214) 352-2601 EL PASO-McN icol, Inc ., (915) 566-2936 FT. WORTH-Scooters Radio Supply Co. ,
(817) ED 6-7448 HOUSTON-Busacker Electronic
Equipment Co., (713) JA 6-4661
UTAH-SALT LAKE CITY Kimball Electronics, Inc., (810) 328-20'75
VIRGINIA CHARLOTTESVILLE-Virginia Radio
Supply Co., Inc ., (703) 296-4184 NORFOLK-Priest Electronics, Inc.,
(703) 855-0141
WASHINGTON-OREGON-SEATTLE Seattle Rad io Supp ly, Inc ., (206) MA 4-2341
WISCONSIN-MILWAUKEE Electronic Expeditors , Inc., (414) UP 1-3000
Ammon & Champion 5545 East Skelly Drive / Suite #5, Tulsa, Oklahoma 74114 Tel.: (918) 627-7670 ; TWX: 918-627-6033
Ammon & Champion P.0. Box 35263, Blanton Tower 628, Dallas, Texas 75235 Tel.: (214) 357-8441 ; TWX: 214-899-8306
Ammon & Champion 115-14 Burdine , Houston, Texas 77035 Tel.: (713) 729-1233; TWX: 713-571-3133
WESTERN AREA
AREA HEADQUARTERS General Instrument Corporation 6108 W. Venice Blvd., Los Angeles, Cal if. 90034 Tel.: (213) 933-7261 ; TWX : 213-937-2187
General Instrument Corporation 647 Veterans Blvd ., Redwood City, Calif. 94063 Tel.: (415) 365-1920 Suite No. 1
Vistronics 5957 Fairmont Ext., San Diego 20, Calif. Tel.: (714) 283-3946
Electronic Component Sales Inc. 2340 W. Main St. , Littleton, Colo . 80120 Tel.: (303) 798-8481 ; TWX: 303-798-8114
Bill Waddell Co. 10211 N.E. 31st Place , Bellevue, Wash . Tel. : (206) 822-9629 ; TWX: 206-999-1875

GENERAL INSTRUMENT CDRPDRATIDN
SEMICDNDUCTDR PRODUCTS GROUP
Cat. No. GIC-1000

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OIO

' - ~ (18) M~-.,-

OCICICJ

'-i~-- ~!-

10-Lead Flat Pack

CASE 3_5
I~
1.00 MIN.

HOCOLOPLATE l [ ADSIOO,.
;.u.JJ..U..U.J.L.J,1-1>-; INCHMIN

Lr~8±mHmttiOIO
01:fJLJLom
14-Lead Flat Pack

CASE 31

Lallla ~o 8 LEADS

I - n I 0011 011

u

-1 K£Y _;...,1-\lL.Ol...,4.._.l.__6_,

lll
_J_ 789 IOllIZ

o aa o

OIO
~~
-q;r=-~I-
8-Lead Flat Pack
CASE 36

1. 6 25 1.000

CASE 27

fr:-- 6 Lead'
003 .011

0m0~~ !

KEY

113 4 1 6 1

m

789 !01111_J

OIO
~ :J.E-LTI.~
6-Lead Flat Pack

J__~OIO
IOO MAX 062-l~~.062
12-Lead Flat Pack
CASE 37
!~
1.1 2 5 MIN .

.725 260
MAX. ~
tiS

MAX.
I. 6 2 5
1. 0 0 0
I

~ n .·~02D7IA.

D0-1

CASE 38
I~
1.00 MIN.

1.00 MI N.J _

~ I

.033 DIA .029 .

D.0-.29 (Glass-Amp )

FIGURE 1_2

D0-4

CASE 39
RED DOT INDICATES CATHODE LEAD

r
--,
.375 MAX .
1 1.062
j

r1 l-
.050"'·005

i0465LL )-

~~

E5l

r· -

#8-32 UNC - 2A
(THREAD LENGTH TO BE A MAXIMUM)

.324!:88b DIA. C'BORE 45° CHAMFER TO .342 DIA

.3 00 .230

l. OO M IN.j _

L:

.02201A .018 .

DO- 7 (Glass )

CASE 40
.02
I .019
l " MIN.
Li_

.13ffI MAX.

.076 MAX.

111 MIN.

L

1. 6 2 5

l.00 0

n

dt-- :~~;

D0-1 3 (Flangeless )

.±2.J0£t«-fJ:lh~2000
BOTTOM VIEW

1.125 MIN J _
L : .036DIA .028 D0-27

CASE 42

r. -_rr~ ~ ---::--~-t- 21855

L140
J LmEAODSlA

120
000 t100 _ l400MIN

1 00 ~ BAS£

DID

LeadNo2

EMITTER lead Nol

1' ... "
"~ · '

oso 100
COLL£ CT OR leadNo3

T0-18 ( Epoxy Encapsulated ~

NOTES :
l. All dimensions in inches , un· less otherwise specified .
2. Co nstructiona l details for this transistor insert (shall be JED EC T0 -5).
3. Stud heat-sink material : alum· inum screw mach ine stock.
4. The specified dimension applies to the maximum per m i ss i ble p ro t rusion of t h e trans istor (face pla ne ) 1rom the heat-sink inclosure.
5. Orientation of exhaust hole is not restricted relative t o posi tioning of transistor insert within the stud heat-sink.

OUTLINE DIMENSIONS
All dimensions are i n inches. See respect ive data sheet for complete outline dimensions and specificat ions of industrial types.
25

........;..........c _..............._,
·;arr.GENERAL l~~~~U~ENT
'lllt.... ..... ""11111!!!!!!!!11 .

OUTLINE DIMENSIONS

All dimensions are in inches. See respective data sheet for complete outline dimensions and specifications of industrial types.

CASE 5 l~ DIAr

~~j~

-1.fs :m u--1 .QQ2 .125

n n n

MIN .

DIA --u LI

MAX . OUTSIDE
CORNER RADII .007

r:J35.2'10 DIAJ

fl~ ~ .260

.009 _[ TI5

1.foo~ill ~t MIN. I

nLI nLI

+ 10 L. eads 002 017 - :lllIT DIA.

¥,gDIA.

10-Lead T0-5 Package

8-Lead T0-5 Package

CAS~, 7
:155

INDEX POINT

MAX . OUTSIDE
CORNER RADII .007

8-Lead T0-99 Package

CASE 9
r E332501·
1 I ~DIA~
11 l____Jl_ .305 1

OOUETTLAINILESOINF
THIS ZONE OPTIONAL -

.IOOM· IN~f i l2l60

~
··.

__2j40

009
m . ~DIA

1

n

u n

un___l._5tMl IN

4-Lead T0-5 Package

CASE 10

J ~DIA.A
_l___

~DIA

~1·050

=.1rI-O---.0-Lr3-~0 .lllii

~------.,2150-.-5-0r0 MIN .

.O f9

_l

.021

MAX . OUTSI OE CORNER
RADII 007

10-Lead TO-74 Package
CASE 13 r;-375~
~3:·~~1 ~ ~ I

KEY

1234561

375

789101112 J

4-Lead T0-72 Package
CASE 15 ·

CASE 11

r-- ·m~ I 8 leads

n

aa o 003' 015 f

KEY

1234561

.m

789101112_1

0 00 0
050
·* ~~ ~~
8-Lead Flat Pack
CASE 16
~:·~·f ;irn

KEY

1234161

m

789101112J

050
~f·Lj,~
7 :Lead Flat Pack
CASE 17

050
~.rLLJ.~ 6-Lead Flat Pack
11-Lead Flat Pack

CASE 19
~:. m--1C'
10-Lead T0-5 Package

6-Lead T0-5 Package

CASE 20

rooo"°'"tnrm~

I LEADS

a a a

~ ~~~~ l_~ · ···
. . :::JF9t...

9-Lead Flat Pack

OIO
*~ -T~~f--- ~~-
12.:Iead .Flat Pack

028_JC'
034
10-Lead T0-5 Package
CASE

l___~O>O

IOOMAX

cc cc

062_j

I- 062

11-Lead Flat Pack

~~om l-~....-
L_~
i

%mo-u!--..\...-...."....._\x

l
llAOS
:T.-
I CM
096"-

·

4-Lead T0-5 Package

24

High-Frequency (continued)

Cross

Index Type

Key

Ho.

HF 78 HF 79 HF 80

2N3728 2N3729 2N3733 40281 40307
A466 MM1945 MPS2894 2N834 2N9&2
2N983 2N 1562 2N2168 2N2169 Tl407
2N960 2N961 2N962 2N964 2N964A
2N965 2N966 2N502 2N700 2N835
2Nl561 . 2N2095 2N2098 2N2480A 2N2883
2N2884 2N3227 2N3375

2N3553
HF 81
2N3924 2N3925 2N3926 2N3927
GN3961'
2N4012 40290 40291 40305 HF 82 MPS3639 MPS3640 40306 A1243 AF139

HF 83

AFY39 MM1943 2N869A 2Nl195 2N2368
2N3013 2N30 14 2N4072 2N 4073 40280

HF 84

Am Am 2N709 46 2N709 '51 2N769
2N976
2~i2998
2N3049 2N3320 2N3321

fae

*fl

Mir.

Type

(MHz}

FA npn,OPE,si 400

FA npn,OPE,si 400

RCA npn,si

400

RCA npn,si

*400

RCA npn,si

*400

AMP npn,. L,si

*400

MO npn, E,si

*400

MO pnp,EP,si

*400

MO npn,EP,00,si *450

SPR pnp,MO,ge

*450

SPR pnp,MO,ge

*450

MO pnp,OM,ge

*450

SPR pnp,MD,ge

*450

SPR pnp,MD,ge

*450

Tl npn,PL,si

*450

MO pnp,EM,ge

*460

MO pnp,EM,ge

*460

MO pnp, EM,ge

*460

MO pnp, EM,ge

*460

MO pnp,EM,ge

*460

MO pnp,EM,ge

*460

MO pnp, EM,ge

*460

*SPR pnp,MO,ge

500

MO pnp, OM,ge

*500

MO npn, PE, si

*500

MO pnp,OM,ge

*500

SPR pnp, ED,ge

*500

SPR pnp,ED,ge

*500

-

npn,PE,si

*500

FA npn,PE,si

*500

FA npn,PE,si

*500

SPR npn,PE,si

*500

RCA npn ,si

*500

RCA npn ,si

*500

p c
(mW)
1.6 w 1.6 w
23W 11.6W 23W
150 800 1000 500 60
60 3W 60 60 200
300 300 300 300 300
300 300 60
-
500
3W lW lW 2W 1750
1150 1200 11.6W
7W

MAX. RA TINGS

v

T.

*VCEO

J

CBO IC

(oC) mW / °C (V) (mA)

200 9.15 30

500

200 9.15 30

500

200 130 -

3A

200 660 18

la

200 131 40

3A

175 1.0 *40 25 .

175 5.33 *40 500

125 10

12

-

175 2

*40 200

100 0.8 *20 100

100 0.8 *15 100

100 40

25

250

100 0.8 *20 100

100 0.8 *15 100

125 2

12

30

100 4 100 4
100 4
JOO 4 100 4

*15 -
*12 -
*12 -
*15 *15 -

100 4 JOO 4 85 1 JOO 1
175 2

*12 *12 -
*20 50 *25 50
*25 200

100 40

25

250

100 13.3 *30 300

100 13.3 *30 300

200 11.4 *80 500

200 10

200 300

200 10

20

300

200 6.85 *40 500

200 660 40

1.5A

200 1.14 40

1

MO npn,A*,si MO npn,A* ,si MO npn,A*,si MO npn,A*,si

MO npn,si RCA npn,si
RCA npn,si RCA npn,si RCA npn,si

MO pnp,EP,si MO pnp,EP,si RCA npn,si AMP pnp,MS,ge
SA pnp,MS,ge

SA pnp,MS,ge

MO npn, E,s i

FA pnp,PE,si

-

pnp, OM,ge

FA npn,PE,si

FA npn,PE,si FA npn,PE,si MO npn,AE,si MO npn,AE,si RCA npn ,si

AMP npn,si AMP npn,si SY npn,si SY npn,si *SPR pnp,MO,ge

SPR pnp,MO,ge Tl pnp,ge
Tl npn, PE,si SPR pnp,ge SPR pnp,ge

*500 7000

200 40

18

500

*500 10000 200 57.1 18

1000

*500 11600 200 66.3 18

1500

*500 23200 200 132.5 18

3000

*500 10000 200 57.2 40

1000

*500 11.6W *500 7W *500 ll.6W

200 61i 200 40
200 66

---

l.SA
0.5A 0.5A

*500 7W

200 40

40

1000

*500 500

125 5

6

80

*500 500

125 5

12

80

*500 ll.6W 200 66

40

l.5A

*500 50

75 .9

20

7

*500 60

90 2.5

15

10

500 225 *500 600 *550 1200
*550 250 *550 1200

90 5.0 *32 30

175 4.0 *40 200

200 6.85 18

200

100 3.33 *30 40.0

200 6.85 15

500

*550 l.2W *550 1.2W

200 6.85 15 200 6.85 20

--

*550 350

200 2.0 20

100

*550 1500

200 8.57 20

150

*550 7W

200 1.14 18

500

*550 230 *550 230
600 400 600 300 *600 35

175 1.54 *40 25

175 1.54 *40 25

200 -

*15 -

200 -

*15 -

100 0.467 *12 100

*600 100 *600 75 *600 l.4W *600 75 *600 75

100 1.33 *15 100

100 1

*15 20

200 9.33 *25 100

100 1.0 10

100

JOO 1.0 *12 100

CHARACTERISTICS

1co

hfe *hFE

*1cEo Coe tic EX *Cob
(µA) (pF)

Package Outline
(TO-)

Remarks

*30-280 *30-280

.010 .010

--

-

-

*250 *20 60 Vces=40; overlay type

-

*100 *22 60 t lceo

*10 (min) *0.25 *20 60 Overlay type

*60

.001 -

72 Cre=.015 pf

*25

0.5

*5

18

*40-150 .08

*6

92

5

.01

*2.8 18 SY, TR, GI, FA, NA, SPR, ITT

*100

1

*1.9 18

*85

1

*1.9 18

9

10

*10 -

*100

1

*1.9 9

*85

1

*1.9 9

*20

0.5

2.2 -

Plast, IEC, GME

*40

0.3

*4

18 SY, Tl, RCA

*40

.3

*4

18 Tl , RCA

*40

-

.3

18 SY, Tl, RCA

*70

.3

*4

18 SY , Tl, RCA

*80

.3

*4

18 SY, Tl

*70

0.3

*4

18 SY, Tl, RCA

*70

0.3

*4

18 SY, Tl, RCA

45

3

*1.0 9

*PH orig Reg

4

2

1.5 17

4. 5

0. 01 *2. 8 18

10

10

*10 -

-

2

*6.5 31 PG=6 dB @160 MHz

-

2

*6.5 9

PG =6 dB@ 160 MHz

*35

0.01

*20 5

diff amp, MO, TRWS

*30

0.1

*1.0 5

*30

0.1

*1.0 5

*30

0.2

*4

18

-

100

*10 60 RCA "Overlay" emitter type,

MO, VEC

-

100

*10 39

RCA "Overlay" emitter type,

MO, VEC

5

100

*12.5 39 *Annular

5

100

*12.5 102 *Annular

5

100

*12.5 60 *Annular

5

250

*25 60 *Annular

5

1000 *10 102

-

*0.1 *10 60 Vces=40; overlay type

-

*100 *17 39 Vces=90; overlay type

-

*100 *17 60 Vces=90; overlay type

*10 (min) *0.1 *10 39 Overlay type

*30-120 -

*30-120 -

*10 (min) ·0.1

*10

8

*50

0.7

*3.5 92

*3.5 92

*10 60

-

18

-

18

lces=.01 lces=.01 Overlay type
uhf-stages

85

0.4

-

18 lg vhf antennas

*25

0.1

*4

18

*75

0.00005 *3.0 18

13.0

2.0

4.0

5

MO, Tl

*40

0.1

*2.5 18 SPR, MO

*60 *60 *10 *10
-
*150 *150 *20-120 *20-120 *55

-

*5

52

-

*5

52

0.1

*4

18

0.1

*4

5

*100 *15 39

.001 -

72 Cre =.023 pf.

.001 -

72 Cre=.023 pt.

.005 *3.0 46 TR

.005 *3.0 51 TR

0.3

*1.5 18 *PH orig Reg

*80 20-500
*20 *40 *80

1.0

*1.5 18 *PH, orig Reg

5

*1.7 72

0.01

*8

-

Flat Pack, SPR

5

*3

18

5

3.5

18

(see pages 4-9 for explanation of company abbreviations.)

May 17, 1966

49

High.--Frequency (continued)

Cross Index Key HF 85
HF 86
HF 87
HF 88
HF 89
HF 90
HF 91

Type No.
2N332 2 2N3399 2N3423 2N342 4 2N3544
2N3683 2N3995 AF139 MM1941 MPS918
MPS3563 2N502A 2N502B 2N2369 2N3303
016Kl 016K2 016K3 2N2369A 2N2708
2N2962 2N2963 2N3784 2N3785 2N2964
2N2965 2N3304 40404 211!3137 2N3564
SI 5657 SJ 5658 Sl5659 2N709 2N709A
2N709A/ 46 2N709A/ 51 2N917 2N3866 ZN 3783
Al220 2N2966 2N3600 40405 2N743/ 46
2N743/51 2N744/ 46 2N7 44/ 51 2N918 2N2729
2N3478 2N3563 2N3662 2N3663 40238
40239 40240 2N700A 2N955 2N2482
2N2784 2N2808 2N2809 2N2810 2N2857
2N3572 A4qQ MM2503 MM2550 MM2552

Mfr.
SPR AMP FA FA MO
KMC Tl AMP MO MO
MO *SPR *SPR FA FA

Type
pnp ,ge pnp ,MS,ge npn ,PE,si npn ,PE,si npn, E.si
-
pnp,ge pnp,MS,ge npn, E,si npn, EP ,si
npn,EP,si pnp,MO,ge pnp,MO,ge npn,PE,si npn,PE,si

fae

*fT

p c

(MHz) (mW)

*600 75 *600 80
*600 l.2W *600 1.2W
*600 400

*600 200
*600 300 *600 50 *600 600 *600 500

*600 500
620 75 620 75 *650 1200
650 3W

MAX. RATINGS

v

T.

*VCEO

J

CBO 'c

(oC) mW / °C (V) (mA)

100 1.0 *12 JOO

90 1.1 *20 7

200 3.44 15

50

200 3.44 15

50

'175 2.67 *25 JOO

200 1.74 *30 30

140 4

*20 100

75 .9

*20 7.0

175 4.0 *30 200

125 5

15

-

125 5

12 -

100 I

*30 50

100 I

*30 50

200 6.85 15

500

200 17

12

IA

CHARACTERISTICS

1co

hfe *hFE

*1crn Coe ticEX *Cob
(µA) (pF)

Pockage Outline
(TO-)

*25

5

3.5

18

*JO

I

1.27 18

*20-200

0.010 1.7

-

*20-200

0.010 1.7

-

*25

0.1

*2.5 18

*150

.05

150-450 3

*10

12

*25

0.1

*20

.OJ

*2.0 72

*4

39

-

18

*0.5 18

*1.7 92

*20·200 .05

*1.7 92

45

3.0

*1.0 9

50

3.0

*1.0 9

*80

O.l

*2.5 18

*60

100

*6.0 -

Remarks 4 Iead low Noise AL AL
PH orig Reg PH orig Reg TR , MO , SPR, NUC MO

GE npn,PL,si

650 200

JOO 2.67 30

25

*110

GE npn,PL,si

650 200

JOO 2.67 30

25

*Jl 0

GE npn,PE,si

*650 200

JOO 2.67 30

25

*110

FA npn, PE,si

*675 l.2W

200 6.85 15

200

*65

RCA npn,EP,si

*700 200

200 -

35

-

180

0.5

*1.4 98 For AGC @45 MHz

0.5

*1.4 98 For AGC @45 MHz

0.5

*1.4 98 For AGC @200 MHz

0. 05 *23 18 SPR

0.01

1.5

-

AL

SPR pnp, EO,ge

*700 . 3000

JOO 40

*40 300

-

1.5

7

37 PG =6db @160MHz

SPR pnp,EO,ge

*700 3000

JOO 40

*40 300

-

1.5

7

37 PG =5db @160MHz

MO pnp,EM,ge

*700 150

JOO 2

20

20

*20-200 5

*I

72

MO pnp,EM,ge

*700 150

JOO 2

12

20

*15-200 5

*I

72

SPR pnp,EO,ge

*700 3000

100 40

*30 300

-

1.5

*7

37 PG =6db @160MHz

SPR pnp, EO,ge FA pnp,PE,si RCA npn,EP,si FA npn,PE,si FA npn,PE,si
FA npn,DPE,si FA npn,DPE,si FA npn,DPE,si FA npn,PE,si FA npn,PE,si

*700 3000
*700 500 *700 300 *750 1000
*750 500

JOO 40

*30 300

200 2.0

6.0 -

175 2

*40 500

200 5.71 20

-

125 5.0

15

-

750 200

125 5

15

-

750 600

125 6

15 -

750 1.0 w 200 5.71 20

-

*800 0.5W

200 5

6.0 -

*800 500

200 5

6.0 -

-
*63 *25-65 *70 *70
-
*70 *70 *55 *60

1.5

*7

37

0.010 *1.9 18

.025 (max) 4 (max)

12

*2.8 5

0.05 *2.5 -

-

*2.5 -

.050 -

-

.050 -

5

0.005 *2.5 18

0.005 *2.5 18

PG =5db @160MHz
MO CDC, IEC, GME
ROllO package ROI 10 package
SY, AL, Tl, RCA, VEC SY, TR, VEC

SY npn,si SY npn ,si
FA npn,D.P,si MO npn,s1 MO pnp,EM,ge

800 400
800 400 *800 300 *800 5000
*800 150

200 -

*15 -

*30-90

5

*3.0 46

200 -

*15 -

*30-90

.005 *3.0 51

200 1.71 15

-

50

0.0005 *1.5 18 AL, Tl, TRWS

200 28.5 30

400

-

20

*3

39 RCA

100 2

20

20

*20-200 5

*I

72

AMP pnpPADT,ge *820 90

PH -

*850 60

RCA npn ,PE,si

*850 300

RCA npn,EP,si

*850 300

SY npn,si

900 400

SY npn,si SY npn,si SY npn,si
FA npn,PE,si
FA npn,PE,si

900 300 900 400
900 300 *900 300 *900 0.8W

RCA npn ,PE ,si
FA npn,PE,si GE npn,PEP ,si GE npn,PEP,si RCA npn,PL,si

900 200 *900 500 *900 200
*900 200 *900 180

RCA npn,PL,si
RCA npn,PL,si MO pnp,DM,ge RCA pnp,MS,ge RCA npn ,DM,si

*900 180 *900 180 *1000 -
*1000 150 *1000 150

SY npn ,si
RA npn,si RA npn,si RA npn,si
RCA npn, PE ,si

1000 300 *1000 200 *1000 200 *1000 200
*1000 300

Tl npn, PL, si

*1000 200

AMP npn,si

1000 200

MO pnp,EP,ge

1000 75

MO pnp, EP, OJ ,ge *1000 300

MO pnp, EP ,DJ ,ge *1000 600

90 JOO .5
--
175 2
200 -

25

15

20

JOO

*30 -

*40 500

*20 200

200 -

*20 200

200 -

*20 200

200 -

*20 200

200 1.71 15

50

200 4.56 15

50

200 -

*30 -

125 5.0

12

-

JOO 2.67 *18 25

100 2.67 *30 JOO

175 1.2 *35 50

175 1.2 *35 50

175 1.2 *35 50

JOO I

*25 50

JOO -

*12 150

100 -

*20 JOO

200 -

15 -

300 1.15 JO

25

300 1.15 15

25

300 1.15 JO

25

200 -

*30 20

200 1.14 13

50

200 1.12 *30 20

100 1.0

15

20

100 4

10

100

100 8

JO

JOO

*20 *15 *20 *20 (min) *20·60
*20-60 *40-120 *40-120 *50 *50
*25 50 *75 *75 40-170
27-100 27-275 4 *30 25-200
40-120 *20 *20 *20 *30-150
20-300 *70 *20 *20 *30

.6

*1.4 -

I

I

18

0.01

1.7 -

-

3.5 (max) -

JO

5

46

70

5

51

JO

5

46

10

5

51

0.0002 *1.4 18

0.0001 *2.4 46

0.02 *2

-

0.05

*1.4 -

0.5

1.2 98

0.5

1.2 98

0.02 (max) -

-

I 0.02 (max) -

-

0.02 (max) -

-

2

1.4 17

5

*4

18

5

*4.5 18

.005 3.0 t

.OJ

*0.7 18

.OJ

*0.7 18

.01

*0.7 18

0.01

1.3

-

0.01 0. 85 -

.010 1.8 72

10

*2

72

10

*3

18

10

*3

5

Low Noise type UHF amplifier GI, TR TR GI, TR TR MO, AL, Tl, NUC, TRWS AL CDC. IEC, GME
t TO·l8, 46, 51, VE.C
4 Leads 4 Leads 4 Leads 4 lead sim to TO 18

(see pages 4-9 for explanation of company abbreviations.)

50

ELECTRONIC DESIGN

NOW!
Solid State Time Delay Relays
for as little as

(P&B QUALITY,
OF COURSE)

why pay for operating characteristics you don't need?

Here is a practical cost-saving answer to many timing applications which do not require the extreme precision of much more expensive relays. CH Series solid state time delay relays are quality-built to perform dependably in most industrial applications. Where more critical perameters are required, we recommend our CD Series.
SAVE UP TO 60%-You can save up to 60% of your time delay relay costs with our new CH Series. Adjustable or fixed models are available with delays on operate or release as well as "interval on".
ACCURACY ±10%-Accuracy is ±10% over the -10° to 55°C temperature range for adjustable time delays. Fixed delays have an accuracy of ± 5% at 25°C ambient temperature. Reset time is 100 milliseconds.
INTERNAL RELAY RATED 10 AMPERES-An internally-mounted DPDT relay is rated at 10 amperes, 115 VAC, resistive. Both AC and DC models are available and all come in a white nylon case with octal plug. CH relays for DC operation have an internal protection against damage by reversal of input polarity. Relays will not operate falsely nor be damaged by a transient input voltage having a magnitude up to twice rated input voltage and a duration of eight milliseconds.
Write for the complete catalog of P&B Time Delay Relays. You can get CH Series relays from your local electronic parts distributor.

SPECIFICATIONS
CH and CD Series Comparison

CH SERIES

CD SERIES

Dial Setting

Reference scale

Time-calibrated ±5% of full scale

Temperature Range

-10°C to +55°C

-40°C to +55°C

Accuracy Over Temperature and Voltage Ran~e

±10% of nominal

± 5% of nominal

Transient Protection

Twice rated input voltage for 8 milliseconds

Tested to 1OOOV-
X cycle surges (on
all 115V AC models)

Inherent False Operation

Contacts may transfer momentarily if timing interval is interrupted

None

Reset Time

100 milliseconds

60 milliseconds

Repeatability

± 2%

± 1%

Polarity

Reversal

Yes

Yes

Protection

(on DC)

POTTER & BRUMFIELD
Division of American Machine & Foundry Co., Princeton, Ind.

Export: AMF International, 261 Madison Ave. , New York, N. Y.

ON READER-SERVICE CARD CIRCLE 17

May 17, 1966

51

High-Frequency (continued)

Cross Index Key
HF 92

Type Ho.
MM2554 2N2929 2N2808A 2N2809A 2N2810A
2N3571 2N3880 40235 40236 40237

HF 93

2N3633 2N3953 2N3959 2N2999 TIXM104
2N3570 TIX3024 TIXM101 2N3932 2N3933

HF 94

2N3960 2N4260 TIXM103 2N4261 2N2480
AFY34 2Nl44 2N231 2N262 2N374

2N656

2N657

Mfr.
MO MO RA RA RA
Tl KMC RCA RCA RCA
TR KMC MO Tl Tl
Tl Tl Tl RCA RCA
MO MO Tl MO GE
SA SY * SPR RCA RCA
Tl
Tl

HF 95

2N706A

Tl

2N710

Tl

2N715

Tl

2N716

Tl

2N738

Tl

2N739

Tl

2N740

Tl

2N743

Tl

2N744

Tl

2N753

Tl

HF 96

2N781

SY

2N782

SY

2N797

Tl

2N849/ Tl430 Tl

2N850/ Tl43 l Tl

2N851/Tl·422 Tl

2N852/Tl·423 Tl

ZN929

Tl

2N930

Tl

HF 97

2N985

Tl

2N998

FA

2N 1052

TR

2Nll41

Tl

2N 1141A

Tl

2N 1142

Tl

ZN1142A

Tl

2Nl 143

Tl

2N ll43 A

Tl

ZN 1247

TR

HF 98

2N1507

Tl

2N 1564

Tl

ZN 1565

Tl

2N 1566

Tl

2Nl572

Tl

Type
pnp,EP,DJ,ge pnp,EM,ge npn,si npn,si npn,si
npn, PL,si
-
npn,PL,si npn,PL,si npn,PL,si
npn,si
-
npn,si pnp,ge pnp,PL,ge
npn, PL, si pnp,PL,ge pnp,PL,ge npn,PE,si npn,PE,si
npn,si pnp,AE,si pnp,PL,ge pnp,AE,si npn,PE,si
pnp, EP ,MS,ge npn,AL,ge pnp,SBT,ge pnp,ge pnp, DR,ge
npn,si
npn,si
npn,si pnp,ge npn,si npn,si npn,si
npn,si npn,si npn,si npn,si npn,si
pnp, EP ,ge pnp,EP,ge npn,ge npn,s1 npn,si
npn,si npn,si npn,si npn,si
pnp,ge npn, DP ,si npn,PL,si pnp,ge pnp,ge
pnp,ge pnp,ge pnp,ge
p~p,ge
npn,PLE,si
npn,si si,npn npn,si npn,si npn,si

fae
*fr
(MHz)
*1000 *1100 *1200 *1200 *1200
*1200 *1200 *1200 *1200 ·1200
1300 *1300 *1300 *1400 *1400
*1500 *1500 *1500 *1600 *1600
*1600 *1600 *1800 *2000 2500
3500 -
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-

p c
(mW) .
600 750 200 200 200
200 200 180 180 180
300 *200 750 75 40
200 75 75 175 175
750 200 40 200 2W
-
1000 9 80 80
4
4
300 300 500 500 500
500 500 300 300 300
300 300 150 300 300
300 300 300 300
150 1800 600 750 750
750 750 750 750 30
600 600 600 600 600

MAX. RA TINGS

T.
J

VCEO
*VCBO 'c

(oC) mW / °C (V) (mA)

CHARACTERISTICS

1co

hfe *hFE

*1ceo Coe tic EX *C ob
(µA) (pF)

Pockoge Outline
(TO-)

Remarks

100 8

10

100

*30

10

100 10

10

100

*10-100 5

300 1.15 10

25

*20

.01

300 1.15 15

25

*20

.01

300 1.15 10

25

*20

.01

>113

5

*2.5 5

*0.7 18

*0.7 18

*0.7 18

4 Leads 4 Leads 4 Leads

200 1.14 15

50

200 1.74 *30 30

175 1.2 *35 50

175 1.2 ·35 50

175 1.2 *35 50

20-200 *150
40·170
4~275
27-275

0. 01 0. 85 -

.01

*1.8 72

0.02 (max) -

-

0.02 (max) -

-

0.02 (max) 0.6 (max) -

4 lead sim to TO 18

200 1.71 6

50

200 1.74 *15 30

200 4.3

12

30

100 1

*15 20

125 1

*12 20

*75 *200
*40·200
15 10-250

0.005 *2.5 18

0.1

·2.0 72

t .005 *2.5 18

5

1.7

7~

6

-

-

200 1.14 15

50

100 1

*15 50

100 1

*15 50

175 1.12 30 175 1.12 40

--

20-150 30-300 30-300
40-150 60-200

0. 01 7

0. 75 *3

--·

4-lead sim to To 18

7

*3

72

0.01

0.55 -

0.01

0.55 -

200 4.3

12

30

200 1.14 15

30

125 1

*12 20

200 1.14 15

30

200 11.4 *75 500

90 6.3
75 -
55 0.9
71 71 -

*40 20

*60 800

*4.5 3

34

-

25

-

*40-200 *30-150 10-250 *30-150 *20
10 *10.5 66
-
-

t .005 *2.5 18

t.005 *2.5 72

6

--

t .005 *2.5 72

0.05 *20 5

-

-

t

500

-

13

3

-

24

5

-

7

8

-

7

diff amp, MO, SPR, TRWS t coax *PH orig Reg

200 22.8 60

-

*30

200 2.28 100 -

*30

10

-

-

TRWS, FA, TR, AMP, CDC,

STC, SSP

10

-

-

TRWS, FA, TR, AMP,CDC,

STC, SSP

RCA

175 2.0 20

50

2

100 4.0 *15 50

6

175 3.33 35

100

1

175 3.33 40

100

*10

175 3.33 80

50

20

10

*5

18 FA, SY, MP, TR, GI, ITT, MO

3

-

18 SY

1

*6

18 NA

1

*6

18 NA

1

*10 18 TR

175 3.33 80

50

40

175 3.33 80

50

80

175 2

12

200

*20

125 2

12

200

9

175 2

20

50

*40

1

*10 18 TR

1

*10 18 TR,AL

1

*5

18 FA, SY, GI, TR, ITT

1

*5

18 FA, SY, MP, TR, GI, ITT, MO

0.5

*5

18 FA, SY, MP, TR, GI, ITT, MO

100 -
100 100 2 175 2 175 2

*15 200

*25

*12 200

*20

7

150

6

15

50

6

15

50

6

3

-

18 AL

3

-

18

1

*4

18

0.5

*5

50

0.5

*5 50

175 2 175 2 175 2 175 2

12

200

9

12

200

9

45

30

60

45

30

150

-

*5

50

-

*5

50

0.01

*8

18 FA, GI, SPR, AL, TR, MO, UC

0.01 *8

18 FA, GI , SPR, AL, TR, NUC, MO,

UC

100 2

7

200

200 10.3 60

500

175 6

*200 200

100 10

*35 100

100 10

*35 100

100 10

*30 100

100 10

*30 100

100 10

*Z5 100

100 10

*30 100

150 .24 6

5

*60 *5 ,000 *20-80 *40 15.6
*40 15.6 *40 15.6 *15

3

*6

18 SY, MO

0.01 *25 18 AL

-

-

5

0.7

-

-

MO, SY

4

-

-

~y

0.7

-

-

SY, MO

4

-

-

SY

0.7

-

-

SY, MO

4

-

-

SY

.005

*20 5

Gt

175 4

*60 1000 *100

1

*35 5

TRWS, CDC

175 4

60

50

20

1

*10 5

TRWS, TR

175 4

60

50

40

1

*10 5 TRWS, TR

175 4

60 ,so

80

1

*10 5 TRWS, TR

175 4

80

50

20

1

*10 5

TR

(see pages 4-9 for explanation of company abbreviations.)

52

ELECTRONIC DESIGN

High-Frequency (continued)

Cross

Index

Type

Key

No.

1ae *I T

Mfr.

Type

(MHz)

HF 99

2N 1573 2Nl574 2N 1646 2N 1742 2N 1743
2Nl744 2N 1745 2N 1754 2N 1865 2N 1866

Tl npn,si

-

Tl npn,si

-

Tl pnp,ge

-

*SPR -

-

*SPR -

-

*SPR -

-

*SP R -

-

*SPR pnp,MD,ge

-

*SPR pnp,Md,ge

-

*SPR pnp,Md,ge

-

HF 100 HF 101

2N 1867 2N 1868 2N 1960 2Nl961 2Nl990
2N2188 2N2189 2N2190 2N2191
2N2192A 2N2360 2N2361 2N2362 2N2389
2N239S 2N2399 2N2398 2N2410 2N2411

*SPR pnp,MD,ge

-

*SPR pnp,MD,ge

-

SY pnp,ge

-

SY pnp,EP,ge

-

FA

npn, DD,si - ' ·

I Tl pnp,ge
Tl pnp,ge

-

Tl pnp,ge

-

Tl pnp,ge

-

GE npn,PE,si

-

*SPR -

-

*SPR -

-

*SPR -

-

Tl npn,si

-

Tl

npn,si

-

*SPR -

-

*SPR -

-

Tl npn,si

-

Tl pnp,si

-

2N2412

Tl pnp,si

-

2N2413

Tl npn,si

-

2N241S

Tl pnp, ge

-

2N2416

Tl pnp,ge

-

2N248S

NA npn, D,si

-

HF 102

2N2486

NA npn,D,si

-

2N263S

Tl npn,ge

-

2N2649

NA npn,D,si

-

2N26SO

NA npn,D,si

-

2N2723 I SSD n,PL

-

HF 103 HF 104

2N2724 2N2725 2N2861 2N2862 2N2863
2N2864 2N2855 2N2936 2N2937 2N3016
2N3017 2N3018 2N3138 2N3139 2N3140
2N3W 2N3142 2N3143 2N3144 2N314S

SSD n,PL

-

SSD n,PL

-

Tl pnp,si

-

Tl pnp,si

-

Tl

npn,si

-

Tl

npn,si

-

Tl npn,si

-

Tl npn,si

-

Tl npn,si

-

BE npn,PE,si

-

BE npn,PE,si

-

BE npn,PE,si

-

NA npn, D,si

-

NA npn, D,si

-

NA npn,D,si

-

NA npn, D,si

-

NA npn,D,si

-

NA npn,D,si

-

NA npn, D,si

-

NA npn, D,si

-

HF 105

~0080
40081 40082 40242 40243
40244 4024S 40246 40279 A1170

RCA npn ,si

-

RCA npn,si

-

RCA npn,si

-

RCA npn,PL,si

-

RCA npn,PL,si

-

RCA npn,PL,si

-

RCA npn,PL,si

-

RCA npn,PL,si

-

RCA npn,si

-

AL npn,DP,si

-

HF 106

TIXS09 TIXSlO TIX3016A

Tl

npn ,EP ,si

-

Tl

npn,EP ,si

-

Tl npn, EP, si

-

MAX. RATINGS

p c

T.
J

VCEO *VCBO lc

(mW} (oC) lmW / 0 c (V) (mA)

CHARACTERISTICS

1co

hie *h FE

*1CEO t 1cEx
(µA)

Coe *C ab (pF)

Package Outline
(TO-)

Remarks

600 600 150 60 60
60 60 50 60 60
60 60 150 150 2W
125 125 125 12S
2.8W 60 60 60 4SO
450 60 60 800 300
300 300 75 75 8700
8700 150 8700 8700 800
800 800 300 300 800
800 200 300 300 25000
25W 25000 20000 20000 20000
20000 25,000 25,000 25,000 2S,000
soo
2W 5W 180 180
100 180 180 ll.6W 300
200 200 200

175 4 175 4 100 2
125 -
125 -
125 -
125 100 0.8 100 0.8 100 0.8
100 0.8 100 0.8 100 -
100 -
150 16

80

5

80

50

*15 50

*20 -

*20 -

*20 -
*20 -
*13 100 *20 50 *35 50

*35 50 *20 50 *15 200 *12 200
*100 lA

85 2.1

25

30

85 2.1

25

30

85 2.1

25

30

8S 2.1

2S

30

200 16

40

lA

125 -

*20 -

12S -

*20 -

125 -

*20 -

200 2.S7 *7S soo

200 2.S7 40

300

12S -

*20 -

125 -

*20 -

200 4.S7 30

800

200 1.72 20

100

40

1

*10 5

TR

80

1

*10 5

TR

*20

3

*5

-

*33

0.8

-

9

*PH orig. Reg.

*33

0.8

-

9

*PH orig. Reg.

*33

1

-

9

*PH orig. Reg.

*33

1

-

9

*PH orig. Reg.

*20

1.0

*1.5 9

*PH orig Reg, GI

70

1.0

-

9

*PH orig Reg

70

1.0

-

9

*PH orig Reg

50

1.0

-

9

*PH orig Reg

*33

1.5

-

9

*PH orig Reg

*25

3.0

-

46

*20

3.0

-

46

*30

1.0

-

5

TRWS, CDC, SY, GI, AMP, AL,

NUC

40

3

*2.5 -

60

3

*2.5

40

3

*2.5 -

60

3

*2.S -

*100-300 0.010 *20 5

CDC, GI, FA, NA, MO, AL

*33

0.8

-

12 RF Amp, *PH orig. Reg.

*33

0.8

-

12

RF mixer, "'PH orig. Reg.

*33

1

-

12

RF osc, *PH orig. Reg.

3S

0.01 *2S so

*20

0.01 *30 so

*33

. 8

-

12

RF mixer, *PH orig. Reg .

*33

0.8

-

12

RF amp, *PH orig. Reg.

*30

0.3

*11

s

FA, NA

*20

0.01

*S

18

200 1.72 20

100

*40

175 2

18

200

*30

100 1

10

20

lS

100 1

10

20

10

175 so

120 -

-

0.01

*S

18

0.1

*S

18

5

*2

18 MO

s

*2

18 MO

1.0

*12 5

VHF Power SW @lOOMHz

17S 50 100 2 175 50
17S so
200 4.6

140 -

12

100

6S

-

140 -

60

40

*4S *2000

1.0

*12 5

VHF Power 3W @200MHz

s

*S

18 SY, MO

1.0

*12

s

2W @l30MHz

1.0

*12 5

VHF Power 4.5W @130MHz

.010

-

18 Darlington amp, SPR

200 4.6

60

200 4.6

45

200 1.72 20

200 1.72 20

200 4.57 25

40

*7000

30

*2000

100

50

100

25

1000 *30

.010 -

18 Darlington amp, SPR

.002

-

18 Darlington amp, SPR

0.01

*6

18

0.01

*6

18

0.5

*13 5

200 4.S7 25

200 1.14 13

175 2

5S

175 2

55

150 420 50

1000 *20

-

*13 s

50

20

0.01

*2S

-

AL

30

150

30

150

0.01

*8

-

AMP, SPR

0.01

*8

-

AMP, GI, SPR

2500 *60-150

0.1

*50 5

SSP

150 420 50

SA

*60-lSO

0.1

lSO 420 50

10000 *60-lSO

0.1

200 12S 6S

2000 -

soo

200 12S 140 200

-

soo

200 125 65

2000 -

soo

*50

t

*SO -

tMT£7 Isolated Collector

30

24 VHF Power 7.SW :; 70MHz

*30 24 VHF Power 14 W@70 MHz

*30 24 VHF Power 4W @130MHz

200 125 140 2000 -

200 142 65

2000 -

200 142

140

2000

-

200 142 65

2000 -

200 142

140

2000

-

soo

*30 24 VHF Power 8\'i ' 130 MHz

500

*30

16

VHF Power 5.4 W@70 MHz

500

*30 16 VHF Power 8.3 @70 MHz

soo

*30 16 VHF Power 4.0\\ @130 MHz

500

*30 16 VHF Power 6.0W <? 130 MHz

17~ 3.33 30

*250

17S 13W/C t60 *2SO

17S 330 t 60 l.5a

175 1.2

*35

50

175 1.2

*35

50

175 1.2

*35

50

17S 1.2

*35

50

175 1.2 *35 so

200 0.66 40

l.SA

200 -

10

-

-

10

-

39

-

10

-

39

-

10

39

-

*80

0.02 (max) 0.5

-

*80

0.02 (rr.ax) 0.5

-

*6S

I
0.02 (max) 0.6

-

*120

0.02 (max) O.S

-

*SS

0.02 (max) 0.6

-

*10 (min) *0.1

*10

60

*10

0.010 *3.~ 18

t Vcex tVcex

200 1.14 13

so

200 1.14 15

50

200 1.14 lS

so

20-300 20-200
20-200

0.01

1.7

-

0.01

1.7

-

0. 01 1.7 -

Ti-Ii ne Package Ti-Line Package Ti-Line Package

(see pages 4-9 for explanation of company abbreviations.)

May 17, 1966

53

RCA HOMETAXIAL-BASE MEANS
HOMOGENEOUS-BASE DESIGN IN AXIAL DIRECTION REDUCES RISKS OF SECOND BREAKDOWN ...
Used in RCA Silicon Power Transistor Line for applications up to 50 Kc/s

EVERY RCA HOMETAXIAL-BASE TRANSISTO~ MEANS RUGGEDNESS!
· Power-Rating Tested (PRT) at maximum power level for 1 second. · Low saturation voltage for greater switching efficiency. · Sharp saturation voltage knee for greater circuit efficiency. · Mechanically r'ugged-p.roved after long experience in Mil-approved and demanding aerospace applications. · Demonstrated superior performance in environmental tests of vibration, shock, and acceleration. · Improved beta characteristics for less distortion during operation. · From a family of single diffused types manufactured by RCA since 1957 and backed by more than 50
million hours of operational life tests.

RCA HOMETAXIAL-BASE TRANSISTORS ARE NOW USED IN:

· Series Regulators · High Fidelity Power ·
Amplifiers · lnvertera/Convertera · Solenoid or
Relay-Control Circuits

· Magnetic Deflection Circuits
· Switching Regulators
· Vehicular Voltage Regulators

· Ignition Circuits · Servo Power Amplifiers · Public Address Amplifiers
· Ultrasonic Power-Amplifiers

NO ELECTRICAL COLLAPSE

RCA'S HOMETAXIAL-BASE ECONOMY SILICON TRANSISTORS
Offer the ultimate in design simplicity for applications from I mA to 30A

40347 hFE = 20-SO @ le= 450 mA
veEv (Max) = 60V
4034S hFE := 30-100 @le= 300 mA
veEV (Max) = 90V
40349 hFE = 25-100 @ le= 150 mA
v = CEV (Max) 140V

40250 hFE = 25-100 @ le= 1.5A
veEV (Max) = 50V
2N3054 hFE = 25-100 @ le= 0.5A VCEV (Max) = 90V
2N3441 hFE = 20-SO @ le= 0.5A
= VCEV (Max) 160V

hFE = 15-60 @le= SA
veEV (Max) = 50V
2N3055 hFE = 20-70 @le= 4A
vCEV (Max) = lOOV
2N3442 hFE = 20-70 @le= 3A
= VcEV (Max) 160V

2N3771 hFE := 15-60 @le= 15A VeEO (SUS) (Min) = 40V
2N3772 hFE = 15-60 @le= lOA VeEo (sus) (Min) = 60V
2N3773 hFE = 15-60 @le= SA VcEo (SUS) (Min) = 140V

AVAILABLE FROM YOUR RCA SEMJCONDUCTOR DISTRIBUTOR
RCA's Hometaxial-Base Silicon Transistor line is the workhorse of the industry at medium and low frequencies. Check into it. You'll find the industry's widest choice in current and voltage ratings-the ri"ght combination of characteristics that's right for your applications. This economy silicon line is backed by a comprehensive program of testing, so you can be sure every unit measures up to its reliability specifications.
For prices and delivery information see your RCA Representative. For technical data, and your copy of SMA-35, 12-volt Audio Amplifier and Converter Designs using RCA Silicon Power Transistors, and a copy of the new 4-page folder describing RCA's Hometaxial-Base transistor line, write: RCA Commercial Engineering, Section IG5, Harrison, N.J.
RCA ELECTRONIC COMPONENTS AND DEVICES, HARRISON, N. J~

Power
Types rated at one watt and higher. In order of increasing power dissipation.

Cross Index Type

Key

Ho.

2N341A 2N709 p 1 2N2038 2N2039 2N 2040
2N2041 2N957 2N339 2N340 2N341 P2 2N342 2N34 2A 2N342B 2N343 2N343A
2N343B 2N706
2N707 2N2106 P3 2N2107 2N2108 2N708
2N 869
2N9 14 2N9 15 2N916 2N947 2N995 P4 2N996 2N2368 2N 2369 2N978 SFT367
SFT 377 Tll 59 Tll60 Tll61 Tll6 2 p 5 2N717
2N718
2N719
2N720
2N721 2N722 2N 4105 PG 2N 4106 2N718A
2N719A 2N7 20A

2N870 2N871
2N910 P7
2N91 1 2N912 2N696 2N697 2N699

56

Mir.

Type

TR

npn ,PL,si

FA

npn,PE ,si

TR npn,PL,si

TR npn,PL,si

TR npn,PL,si

TR npn,PL,si

FA npn,DD,si

Tl

npn,si

Tl

npn,si

Tl

npn,si

Tl

npn,si

Tl

npn,si

Tl

npn ,si

Tl

npn,si

Tl

npn,si

Tl

npn,si

FA

npn,DD ,si

FA

npn , DD, si

GE npn,si

GE

npn ;si

GE npn,si

FA npn ,DP,si

FA

pnp ,DP,si

FA

npn ,PE,si

FA

npn,DP ,si

FA

npn,DP ,si

FA

npn,DP,si

FA

pnp,PE,si

FA

pnp,PE,si

FA npn,PE,si

FA npn ,PE,si

FA

pnp,DD ,s i

NUC pnp ,ge

NUC npn ,ge

Tl

pnp ,ge

Tl

pnp ,ge

Tl

pnp,ge

Tl

pnp ,ge

FA

npn , DD , si

FA

npn , DD , si

FA

npn , DD , si

FA

npn , DD , si

FA

pnp,DD,si

FA pnp,DD,si

AMP npn,ge

AMP pnp,ge FA npn , DP , si

FA npn , DP, si FA npn , DP , si

FA npn, DP , si FA npn , DP, si

FA npn,DP,sj

FA

npn,DP,si

FA npn ,DP,si

FA

npn , DD , si

FA npn , DD , si

FA npn , DD, si

MAX. RATINGS

CHARACTERISTICS

1co

Pc (W)

VCEO

W/ °C

T.
J

*VCBO

I c

(oc) (V) (A)

hie *hFE

*lcEO tic EX
(mA)

fae
*fr (kHz)

Package Outline
(TO-)

·Remarks

0.25

0.003

175 125 0.15 *20-80

0.001

10000

11

ETC

0.5

0.005

200 6.0

-

*55

0.000005 80000

18

SY, Tl , TR, VEG

.6

.0055

175 45

.5

*12-36 .015

2,000

5

ETC

0.6

.0055

175 75

.5

*12-36 .015

2,000

5

ETC

.6

.0055 175 45

.5

*3~90

.015

2,000

5

ETC

.6

.0055

175 75

.5

* 3~90

.015

2,000

5

ETC

0.8

0.0065 150 20

-

*60

10

*250000 18

TRWS, AMP

1

0.008

150 55

0.06 9

0.001

-

11

TR, ETC

1

0.008

150 85

0.06 9

0.001

-

11

TR

1

0.008

150 85

0.06 9

0.001

-

11

TR

1

0.008

150 60

0.06 9

0.001

-

1

0.008

150 85

0.06 9

0.001

-

1

0.008

150 85

0.06 9

0.001

-

1

0.008

150 60

0.06 28

0.001

-

1

0.008

150 60

0.06 15

0.001

-

11

TR

11

TR

11

11

TR

11

TR

1

0.008

150 65

*0.06 28

0.001

-

11

TR

1

0.0067 175 *25 -

*45

0.000005 400000 18

ITT,SPR,SY,MO, TR, AMP

GI, RCA, NUC

1

0. 0067 175 *56 -

*12

0.000005 400000 18

TRWS, MO, GI

1

.008

200 *60 1

12-36

.2

15000

5

TR

1

.008

200 *60 1

3~90

.2

15000

5

TR, ·1 ·

1

.008

200 *60 1

75-200 .2

15000

5

TR, Tl

1.2

0.0069 200 15

-

*50

0.000004 400000 18

ITT, SY , MO, TR, G1, AfdP,

NA, RCA, NUC

1.2

0.00686 200 18

-

*60

0.000005 *200000 18

MO

1.2

0.0069 200 15

-

*55

0.000004 *370000 18

ITT, MO, TR, GI, NUC, SPR

1.2

0.0069 200 50

-

*100

0.000005 *300000 18

NA, MO

1.2

0.0069 200 25

-

*100

0.000005 *400000 18

TRWS , NA, MO

1.2

0.0069 200 *20 0.1 *40

10

*250000 18

1.2

0.0069 200 15

-

*70

0.000001 *150000 18

TR, MO

1.2

0.00685 200 12

-

*75

1.2

0.0685 200 15

0.5 *40

1.2

0.00685 200 15

0.5 *80

1.25

0.010

150 20

-

*30

1.25

-

85 16

1

*50

0.0002 0.001
0.001 0.001 0.01

*230000 18

550000 18

*650000 18

*60000 18

-

1

TR TR, AL, MO, SPR TR, MO, AL, NUC, SPR TR

1.25

-

85 16

0.6 *50

0.01

-

1

1. 4

.0187

100 40

3

*20-60 .65

6

-

1.4

.0187

100 60

3

*20-60 .65

6

-·

1.4

.0187

100 80

3

*20-60 .65

6

-

1.4

.0187

100 100 3

*20-60 .65

6

-

1. 5

0. 010 175 *60 -

*40

1.5

0. 010

175 *60 -

*75

1.5

0. 010 175 *120 -

*40

0.00001 60000

18

TRWS, CDC, TR, GI , AMP

NA

1

80

18

TRWS, CDC, SY , MO , TR , GI ,

AMP, AL, NA

0.001

60000

18

TRWS, CDC, TR, GI, AMP

1. 5

0. 010 175 *120 -

*80

0.001

80000

18

TRWS, CDC, TR , GI , AMP, AL,

NA

1.5

0.010

175 35

-

*60

0.001

*60000 18

KSC, TR

1.5

0.010 175 35

-

*50

0.001

*90000 18

KSC, MO, TR

1.6

2.5

90 *25 1.0 *200

.025

*1.0

1

1.6 1. 8

2.5

90 *25

0. 0103 200 *75

-1.0

*200 *80

. 025

*l. 0

1

0.0000003 80000

18

CDC, TR, AMP, AL , GI ,

RCA, NA, MO, TRWS

1.8

0. 0103 200 *120 -

*40

0.000005 60000

18

TRWS, CDC, AMP, AL, GI, TR

1.8

0. 0103 200 *120 -

*80

0.000005 60000

18

TRWS, CDC, GI , AMP, Al, RCA,

TR

1.8

0. 0103 200 60

-

*75

0.000004 80000

18

CDC, GI , AMP, AL

1.8

0. 0103 200 60

-

*130

0.000004 100000 18

CDC, GI , AMP , AL,

RCA, NA

1.8

0.0103 200 60

-

140

0.000005 *80000 18

TRWS, CDC, AL

1.8

0.0103 200 60

-

70

0.000005 *70000 18

TRWS,CDC,AL

1.8

0.0103 200 60

-

45

0.000005 *60000 18

TRWS, CDC, AL

2

0. 0133 175 *60 -

*40

0.00001 -

5

TRWS, TR, GI , AMP, CDC, NA

2

0. 0133 175 *60 -

*75

0.00001 -

5

TRWS, MO , TR , GI , AMP , CDC ,

2

0. 0133 175 *120 -

*80

0.00001 -

5

TRWS, SY , TR, GI , AMP, CDC ,

RCA, NA

(see pages 4-9 for explanation of company abbreviations.)

ELECTRONIC DESIGN

Power <continued)

Cross

Index Type

Key

Na.

2Nll31 2N 1132 2N 1252 2Nl253
p 8 2N 1420

2N 1837 2N 1838 2N 1839

2Nl840 2N 1983 2N 1984 2N 1985 2N 1986 P9
2N 1987 2N 1988 2N1989 2N 1990 2N 1991

2N 2303 BFY 33 BFY 34 BFY 46 p 10 BFY 12
2N 1335 2N 1336 2N 1337 2Nl338 2N 1339

2N 1340 2Nl341 2Nl342 2N 1409 2N 1410 p 11
2N2192A 2N2193A 2N2194A 2N2195A 2N2243A

2N698 2N 1206 2Nl207 2N 1505 2N 1506
p 12
2N 1561 2N 1562 2N 1613

2Nl692 2N 1693 2N1711 2Nl893A 2N1973 p 13 2N 1974 2N 1975 2N2049 2N3732 2N 1506A
· SP10800 2N497 2N498 2N656
p 14 2N657 2Nl445 2Nl943 2N2657 2N2658

p c

Mfr.

Type

(W)

FA pnp,DD,si

2

FA

pnp,DD,si

2

FA

npn,DD,si

2

FA npn,DD,si

2

FA

npn , DD, si

2

TRWS npn,Pl,si

2

TRWS npn,PL,si

2

TRWS npn,PL,si

2

TRWS npn,PL,si

2

FA npn, DD, si

2

FA npn, DD, si

2

FA npn , DP , si

2

FA

npn, DD, si

2

FA npn, DD, si

2

FA

npn , DD , Si

2

FA pnp, DD , si

2

FA

npn, DD, si

2

FA pnp , DD, si

2

FA pnp, DD , si

2

SA

npn,PL,si

2.6

SA

npn,PL,si

2.6

SA

npn ,PL,si

2.6

SA

npn,EP,PL,si 2.6

TRWS pnp,PL,si

2.8

TRWS npn,PL,si

2.8

TRWS npn,PL,si

2.8

TRWS npn,PL,si

2.8

TRWS npn,PL,si

2.8

TRWS npn,PL,si

2.8

TRWS npn,PL,si

2.8

TRWS npn,PL,si

2.8

TRWS npri,PL,si

2.8

TRWS npn,PL,si

2.8

GE

npn,si

2.8

GE

npn,PE,si

2.8

GE

npn,PE,si

2.8

GE

npn,PE,si

2.8

GE npn,PE,si

2.8

FA

npn,DP,si

3

TR

npn,PL,si

3

TR

npn,PL,si

3

TRWS npn,PL,si

3

TRWS npn,PL,si

3

MO

pnp,DM ,ge

3

MO

pnp,DM,ge

3

FA

npn , DP,si

3

MO

pnp ,DM,ge

3

MO

pnp,DM,ge

3

FA

npn, OT, si

3

TRWS npn,PL,si

3

FA

npn , DP, si

3

FA

npn,DP,si

3

FA npn, DP , Si

3

FA npn, DP, si

3

RCA pnp,DJ,ge

3

TRWS npn,PL,si

3.5

FA npn,DP,si

3.5

Tl

npn, TD, si

4

Tl

npn , TD, si

4

Tl

npn ,si

4

Tl

npn ,si

4

Tl

npn , TD , si

4

Tl

npn , TD, si

4

SOL npn,si

4

SOL npn ,si

4

May 17, 1966

MAX. RATINGS

CHARACTERISTICS

VCEO

T.
J

*VCBO

IC

hie

W/ °C (oc) (V) (A) *hFE

1co
*1cEO
t ic EX (mA)

fae *fr
(kHz)

Package Outline
(TO-)

Remarks

0.0133 175 35

0.6 *30

0.0133 175 35 . 0.6 *45

0.0133 175 *30 -

*35

0.0133 175 *30 -

*45

0.00001 *70000 5

0.00001 *90000 5

0.0001 *80000 5

0.0001

"' 11UUUU 5

0. 0133 175 *60 -

*700

0. 00001 100000 5

.013

175 *80 0.50 *40-120 .0005

4500

5

.013

175 *45 0.50 *40-150 .0015

2300

5

.013

175 *45 0.50 *12-50 .0015

3500

5

KSC, MO KSC, MO SY, TR, NA NA
TRWS, CPC, MO, TR, GI, NA, AMP CDC CDC CDC

.013

175 *25 0.50 *10-100 0.30

0. 016 150 25

-

100

0.001

0. 016 150 25

-

80

0.001

0. 016 150 25

-

60

0.001

0. 016 150 25

-

150

0.001

o. 016 o. 016

150 25 150 45

-
-

50 *75

0.001 0.001

0. 016 150 45

-

*40

0.001

0. 016 150 *100 1. 0 *30

0.001

0. 016 150 *30 -

*30

0.001

2000

5

30000

5

30000

5

30000

5

50000

5

50000

5

50000

5

50000

5

-

5

60000

5

CDC AMP, ETC, AL AMP, ETC, AL AMP , ETC, AL GI , AMP, ETC, AL
GI, AMP, ETC, AL GI , ETC, AL STC, ETC, AL SY , GI , AMP, AL KSC , TR , MO

0. 0133 175 35 0.016 200 *50 0.016 200 *75 0.016 200 50
0.016 200 40

-

*90

0.001

0.5 >35

.00002

0.5 *40-120 .00001

0.5

100-300 .OOQOI

0,5 33-170 .00002

70000

5

80000

5

80000

5

100,000 5

180,000 5

TR, MO

.019

175 *120 0.30 *10-150 0.001

-

5

.019

175 *120 0.30 *10-150 0.001

-

5

.019

175 *120 0.30 *10-150 0.001

-

5

.019

175 *80 0.30 *10-150 0.001

-

5

.019

175 *120 0.30 *10-150 0.001

-

5

.019

175 *120 0.30 *10-150 0.001

-

5

.019

175 *120 0.30 *10-150 0.001

-

5

.019

175 *150 0.30 *12

0.01

-

5

.0187 175 *30 0.50 *15-45 0.010

5000

5

GI

.0187 175 *45 0.50 *30-90 0.010

2500

5

GI

.016

200 40

1

100-300 0.01

.016

200 50

1

40-120 1

.016

200 40

1

*20-60

1

.016

200 25

1

20

.01

.016

200 80

1

*40· 120 0.1

130000 5

-

5

-

5

130000 5

-

5

0.0172 200 60

-

*40

0.000005 -

5

.025

175 60

.15 *20-80 0.001

10,000

5

.025

175 125 .15 *20-80 0.001

10,000 5

.175

175 *50 0.5 *7-100 .05

20000

5

.175

175 *60 0.5 *10-100 .01

20000

5

CDC, GI, MO, FA, NA, AL CDC, FA, GI, MO, NA, AL CDC, FA, GI, MO, NA, AL CDC, FA, GI, MO, AL CDC
TRWS, TR; GI, AMP, CDC Tl Tl NUC NUC STC, RCA, NA

0.04

100 25

.25 10

0.04

100 25

.25 9

0. 0172 200 *75 -

*80

0.01

*500

-

0.01

*450

-

0. 000000~ 80000

5

TRWS, CDC, MO , TR, GI, AMP, AL, RCA

0.04

100 25

.25 10

0.01

*500

0.04

100 0.04 .25 9

0.01

450

-

0. 0172 200 ·*75 -

*130

0. 0000003 100000 5

.017

200 *140 0.50 *40-120 .0001

3000

5

0. 00456 200 60

-

140

0.000005 80000

5

0.0172 200 60

-

70

0.000005 70000

5

0. 0172 200 60

-

45

0.000005 60000

5

0. 0172 200 ·75 -

*130

0.1

85 *-100 3

-

0.000004 86000

5

0.2

-

3

.200

200 *BO 0.5 *10-100 .0005

20000

5

.200

200 45

-

*60-600 .010

-

89

0. 0228 200 60

1

*12-36 0. 01

*20

5

0. 0228 200 100 1

*12-36 0. 01

*20

5

0.0228 200 60

-

*30

a.010

-

-

TRWS, CDC, MO, TR, GI, AMP, GI, TR, NA TRWS, AMP, TR
AL, TRWS, AMP, TR TRWS, AMP, TR AL
VEG
Dual npn TRWS TRWS TRWS, FA, TR, AMP, CDC, ST~, SSP

0.0228 200 100 -

*30

0.010

-

-

TRWS, FA, TR',AMP, CDC, STC

0. 0228 200 120 1

*20-80

0.01

*20

5

0. 0228 200 60

1

*30-90 0. 01

*20

5

.04

200 *80 5.0 *40-120 100

20000

5

Tl, AMP, SSP

.04

200 *100 5.0 *40-120 .0001

20000

5

Tl, AMP, SSP

(see pages 4-9 for explanation of company abbreviations.)

57

Power <continued)

Cross Index Type

Key

Ho.

2N3469 40264 NPC 514 2N497A 2N498A p 15 2N656A 2N657A 2N699 B
2Nl~7
2Nl479
2N 1480 2Nl481 2N 1482 2Nl615 2Nl700 p 16 2N2017 2N2282 2N2283 2N2284 2N2270
2N2297 2N2350A 2N2351A 2N2352A 2N2353A p 17 2N2364A 2N2726 2N2727 2N2890 2N2891
2N3016 2N3056 2N3056A 2N3057 2N3057A p 18 2N3114 2N3374 2N3439 2N3440 2N3660
2N3661 2N3665 2N3665 2N3666 2N3699 p 19 2N3731 2N3916 40309 40311 40314
40315 40317 40319 40320 40321 p 20 40323 40326 40327 40347 40348
40360 4036r 40362 40367 PT3500 p 21 40250VI 40375 2N3719 2N3720 OC30

pc

Mfr.

Type

(W)

SOL npn,si

4

RCA npn,si

4

NUC npn,si

4

GE

npn,si

5

GE

npn,si

5

GE

npn,si

5

GE

npn,si

5

FA

npn, DD, si

5

-

npn,si

5

RCA npn,si

5

RCA npn,si

5

RCA npn,si

5

RCA npn,si

5

TR

npn,PL,si

5

RCA npn

5

GE

npn,si

5

BE

pnp,ge

5

BE

pnp,ge

5

BE

pnp,ge

5

RCA npn,si

5

FA

npn , PE, si

5

GE

npn,PE,si

5

GE

npn,PE,si

5

GE

npn,PE,si

5

GE

npn,PE,si

5.

GE

npn,PE,si

5

GE

npn,si

5

GE npn,si

5

FA

npn,PE,si

5

FA npn,PE,si

5

BE

-

5

FA

npn,DPE,si

5

FA

npn,DPE,si

5

FA

npn,DPE,si

5

FA

npn,DPE,si

5

FA npn,DP,si

5

VEC npn,PE,si

5

RCA npn,si

5

RCA npn ,si

5

TR

pnp,si

5

TR

pnp,si

5

TR

npn ,si

5

FA

npn,DPE,si

5

FA

npn,DPE,si

5

MO

pnp, AE, si

5

RCA pnp,DJ,ge

5

FA

npn,DP,si

5

RCA npn, si

5

RCA npn, si

5

RCA npn,si

5

RCA npn, si

5

RCA npn,si

5

RCA pnp,si

5

RCA npn,si

5

RCA npn,si

5

RCA npn, si

5

RCA npn,si

5

RCA npn, si

5

RCA npn,si

5

RCA npn,si

5

RCA npn, si

5

RCA npn,si

5

RCA pnp,si

5

RCA npn, si

5

TRWS -

5

RCA npn,si

5.8

RCA npn,si

5.8

MO

pnp,AE,si

6

MO

pnp,AE,si

6

AMP pnp,PADT,ge 6.7

58

MAX. RATINGS

W/ °C

VCEO

T.
J

*VCBO

1,

(oc) (V) (A)

CHARACTERISTICS

1co

hfe *hFE

*1cEO
t ic EX (mA)

fae *fr
(kHz)

Package Outline (TO-)

Remarks

.04 0.2 -
.0286
.0286 .0286 0. 0286 0.33 .0286
.0286 .0286 .0286 .045 .0286
.0285 0.066 0.066 0.066 .0286
0. 0286 .0285 .0285 .0285 .0285
.0285 .0266 .0266 0.0286 0.0286
.286 .286 .286 .286
0.0286 .286 0.33 0.33 0.028
0.028 0.028 .0286 .0286 0. 0286
0.16 .040 0.028 0.028 0.028
0.028 0.028 0.028 0,028 0.028
0. 028 0.028 0.028 0.028 0.028
0.028 0. 028 0. 028 0. 028 0.03
0.033 0.033 .034 .034
-

200 35

5

*100

.0001

*20,000 5

150 300 0.1 *60

0.1

-

*300 0.2 *30

0.1

*25
-

-

200 60

1

12-36

.010

15,000

5

200 100 1

12-36

.01

15,000

5

200 60

1

30-90

.010

200 100 1

30-90

.01

200 80

-

*80

0. 3

175 *60 .5

*15-75 .5

200 40

1.5 *20-60

.01

15,000

5

15,000

5

-

5

10

8

50

5

200 55

1.5 *20-60 .01

200 40

1.5 *35-100 .01

200 55

1.5 *35-100 .01

175 100 .2

*25

.002

200 40

1

*20-80 .075

50

5

50

5

50

5

2,000

5

40

5

200 60

1

*15-200 0.01

-

5

110 30

3

20

-

-

37

110 60

3

*20

100

-

37

llO 100 3

*20

100

-

37

200 45

1

*50-200 50

1000

5

200 35 200 25 200 50 200 40 200 25

1.0 *50

0. 2

1

*20

0.1

1

*40-120 1

1

20-60

1

1

*20

1

!IUUOU

5

-

46

-

46

-

46

-

46

200 80

1

200 *200 1

200 *200 1

200 80

-

200 80

-

*40-120 .0001

-

46

*30-90 .01

-

5

*75-150 .01

-

5

55

0.000002 *50000 5

*80

0.000002 *50000 5

-

*100 2.5

200 *100 1

200 *140 1

200 *100 1

200 *140 1

*60-150 0.001

*120

.010

*120

.010

*300

.010

*300

.010

-

5

80,000 46

200 MHz 46

100 MHz 46

200 MHz 46

200 150 -

*60

0.3

*54000 5

200 80

.5 2.9

.00001

-

5

200 350 1

*40-160 *0.02

-

5

200 250 1

*40-160 *0.05

-

5

200 30

2

50

0.00001 30Mc

5

200 50

2

200 80

1

200 *120 1

200 *120 1

200 60

3

85 *-320 10

150 150 10

200 18

0.7

200 30

0.7

200 40

0.7

50 *80 *120 *300 *35-150
-
*150 *70-350 *70-350 *70-350

0.00001 0.00005 150 150 0. 001
0.2
-
250 250 250

30Mc

5

60Mc

5

60,000

5

60,000 5

*60 MHz 5

-

3

50,000 5

*100 MHz 5

*100 MHz 5

*100 MHz 5

200 35

0.7 *70- 350 250

200 40

0.7 *40-200 250

200 -40 -0.7 *35 -200 250

200 40

0.7 *40-200 250

200 -

1

*25-200 0.1

-*100 MHz 5 5

*100 MHz 5

-

5

-

5

200 18
- 200 40
200 200 40 200 65

0. 7 *70-350 250

0.7 *40 -200 250

1

*40-250 0.005

1

*20-80 0.001

1

*30-100 0.001

*100 MHz 5

-

5

-

5

-

5

-

5

200 70

0.7 *40-200 0.001

200 70

0.7

*70-350 -

200 -70 -0.7 *35-200 -

200 55

1. 5 *35-100 0.004

200 40

0.5 10-80

0.1

*100 MHz 5

*100 MHz 5

"'100 MHz 5

-

5

-

39

200 40 200 50 200 40
200 60 75 *16

4

*25-100 1

I lO(peak) *50-200 *5

3

·2~180 .01

3

*25-180 .01

1.4 *36

.012

*1000

66

*60 MHz 66

*60000 5

*60000 5

-

-

SSP, TR , TI TR, SSP, Tl TR, SSP, Tl TR, SSP, Tl GI, TRWS STC SIC, TR STC, TR STC, TR STC, TR CDC STC, TR, Tl CDC, TR
CDC, GI , TR, NA TR, NA NA NA NA Tl Tl
MO, TRWS
Ve ER= 300
lcER=300
lcER = 0.001 mA lcER = 0.001 mA
free air heat radiator free air heat radiator Special AF Power

(see pages 4-9 for explanation of company abbreviations.)

ELECTRONIC DESIGN

Power <continued)

Cross

Index Type

Key

No.

2N326 2Nll83 2N 1183A 2N 11838 2Nl 184 p 22
2N 1184A 2N 11848 2N4077 2N4078 2Nl22
2N2631 2N2881 2N2882 2N2911 V-600 p 23 V-601 V-602 2N 1068 2Nl714 2N 1715
2N 1716 2N 1717 2N 1718 2N 1719 2Nl720 p 24 2N1721 2N2017 2N2067 2N2067B 2N2067G
2N2067-0 2N2067W 2N2068 2N2068-0 2N2068G p 25 2N3418 2N 3419 2N3420 2N3421 2N3730
2N4041 40256 40255 TIP14 2N301 p 26
2N301A VX-3375 2N3212 2N3213 2N3214
2N3215 2N2147 2N2148 40022 40050 p 27
40051 40254 2Nl709 2N 1710 2N2196
2N219 7 2N2201 2N2202 2N2203 2N2204 p 28 2N2239 2N26 ll 2N2781 2N2782 2N27 83

Mfr.

Type

SY RCA RCA RCA RCA
RCA RCA AMP AMP Tl
RCA STC STC STC VEC
VEC VEC
Tl Tl
Tl Tl Tl Tl Tl
Tl BE ITT ITT ITT
ITT ITT ITT ITT ITT
Tl Tl Tl Tl RCA
TRWS RCA RCA Tl RCA
RCA VEC DE DE DE
DE RCA RCA RCA RCA
RCA RCA TRWS TRWS GE
GE GE GE GE GE
GE GE TRWS TRWS TRWS

npn,AL,ge pnp,ge pnp,ge pnp,ge pnp,ge
pnp,si pnp,ge npn,ge pnp, ge npn,si
npn,si pnp pnp npn npn,PE,si
npn,PE,si npn,PE,si npn,si npn,si npn,si
npn,si npn,si npn,si npn,si npn,si
npn,si pnp,AJ ,ge pnp,AJ ,ge pnp,AJ,ge
pnp,AJ ,ge pnp,AJ ,ge pnp,AJ ,ge pnp,AJ ,ge pnp,AJ ,ge
npn, EP, si npn, EP, si npn, EP, si npn,EP,si pnp,DJ,ge
-
npn,si npn, si npn,EP,si pnp,AJ ,ge
pnp,AJ,ge npn,PE,si ge pnp,AD,ge pnp,AD,ge
pnp,AD,ge pnp, DR ,ge pnp, DR, ge pnp, AJ,ge pnp,AD,ge
P.np,AD,ge pnp,AJ, ge npn,PL,si npn,PL,si npn,si
npn,si npn,si npn,si npn,si npn,si
npn,si npn,si npn,PL,si npn,PL,si npn,PL,si

May 17, 1966

MAX. RA TINGS

CHARACTERISTICS

lco

Pc (W)

VCEO

T.
J

*VCBO

I c

hfe

W/ °C (oc) (V) (A) *hFE

*1cEO
t ic EX (mA)

fae *fr
(kHz)

Pockage Outline
(TO-)

Remarks

7

-

85 *35 2

*15-60 .5

7.5

0.1

100 20

3

*20-60 .ZS

7.5

0.1

100 30

3

*20-60 .25

7.5

0.1

100 40

3

*20-60

.25

7.5

0.1

100 20

3

*40-120 .25

0.15

3

10

8

10

8

10

8

10

8

7.5

0.1

100 30

3

*40-1~

.25

7.5

0.1

100 40

3

*40-120 .25

7. 5

0.12

90 *32 1. 0 *150

.025

8. 0

0.13

90 *32 1. 0 *150

. 018

8.75

0.07

150 *120 0.14 *3

0.01

10

8

10

8

*1.0

-

*l. 0

-

-

-

8.75

.05

200 60

1.5

*50-250 0.0001

1500

8.75

.05

200 60

2

*20-60 -

-

8.75

.05

200 100 2

*20-60 -

-

8.75

.05

200 125 3

*20-60 -

-

8.75

.050

200 60

1.5 -

.000005 -

39

VEC, Tl

5

CT

5

CT

5

5

8.75

.050

200 60

1.5 -

.001

-

8.75

.050

200 40

1.5 -

.001

-

10

.067

175 *60

1.5

· 15.75

.5

10

10

0.134 175 60

1

*20

1

-

10

0.134 175 100 1

*20

1

-

10

0.134 175 60

1

*40

1

-

10

0.134 175 100 1

*40

1

-

10

0.134 175 60

1

*20

1

-

10

0.134 175 100 1

*20

1

-

10

0.134 175 60

1

*40

1

-

5

5

8

STC, KSC

-

SSP

-

AMP, BE, SSP

--1---

-

SSP

-

SSP

-

SSP

-

SSP

-

SSP

10

0.134 175 100 1

*40

1

-

10

-

-

*100 5.

*30

-

-

10

-

100 *40 3.0 -

-

7

10

-

100 *40

3.0

-

-

7

10

-

100 *40 3.0 -

-

7

-

SSP

t

t MT-27, Tl

t

tMS7, KSC

t

tMS7, KSC

t

tMS7, KSC

10

-

10

-

100 *40 3.0 100 *40 3.0 -

-
-

7 7

t

tMS7, KSC

t

tMS7, KSC

10

-

10

-

10

-

100 *80 3.0 100 *80 3.0 100 *80 3.0 -

-
-
-

7 7 7

t

tMS7, KSC

t

tMS7, KSC

t

tMS7, KSC

10

0 .133 175 60

5

*20-60

0. 00003 *40

5

10

0.133 175 80

5

*20-60 0. 00003 *40

5

10

0.133 175 60

5

*40-120 0. 00003 *40

5

10 10

0 133 0.33

175 85

80 *200

5 -3A

-*40-120

0. 00003 0.2

·40
-

5 3

10

0.06

200 40

0.5 10-80

0.2

-

-

MT59 package

10

0.066 200 350 1

*40-60 *0.05

-

-

10

0. 066 200 250 1

*40-160 *20

-

5

10

.133

150 60

1

*30-150 .o~.

10,000 -

Tab-Pac

11

-

85 *40 3

*70

3

-

3

DE, KSC, BE, ITT, LAN

11

-

11.6

-

12

7

12

7

12

7

85 60

3

*70

3

200 40

1.5 -

*0.1

110 80

5

*30·90 1

110 60

5

30-90

1

110 40

5

*30-90

1

-

3

*600,000 -

30

37

30

37

30

37

DE, KSC, BE, ITT

12

7

110 30

5

*30-90 1

30

37

12. 5 -

100 *60 5

*100

1

4000

3

LAN

12. 5 -

100 *75 5

*100

1

30C~

3

LAN

12.5

0.66

100 *32 5

*70

1

*300

3

12.5

0.66

100 *40 5

90

max. -0.5 500

3

12.5

0.66

100 *50 5

90

max. 0.5 500

3

12.5

0.66

100 *32 5

*70

3

*300

3

15

0.1

175 *75 2.0 *7.5-75 0.01

2000

8

NUC

15

0.1

175 *60 2

*7.5-75 0.05

1600

8

NUC

15

.0667 200 *80 1

*30-90 .075

-

-

Special Heat Sink

15

66.7

175 *80 1

*200

-

15

.067

175 100 1

*30-90 .05

15

.067

175 100 1

30-90

.05

15

.067

175 100 1

30-90

.05

15

.067

175 100 1

30-90

.05

-

-

15000

-

15000

-

15000

-

15000

-

15

.120

200 *60 1

*30-200 10

-

5

Special Heat Sink

15

.067

175 100 1

12-36

.05

15000

-

15

0.1

175 *75 2

*7 .5-75 0.50

1870

8

15

'0.1

175 *100 2

*7.5-75 0.50

1870

8

15

0.1

175 *100 2

*7 .5-75 0.01

1870

8

(see pages 4-9 for explanation of company abbreviations.)

59

Power <continued)

Cross Index Type

Key

Ho.

2N2874 2N2987 2N2988 2N2989 2N2990 p 29 2N2991 2N2992 2N2993 2N2994 2N2995
2N3919 2N3920 2N4000 2N4001 BD109 p 30 2N2525 2N2835 2N4040 V-610 V-611
V-612 2Nl56 2Nl58 2Nl58A 2Nl042 p 31
2N 1043 2Nl044 2N 1045 2N2552 2N2553

2N2554 2N2555 2N2556 2N2557 2N2558 p 32 2N2559 2N2560 2N2561 2N2562 2N2563

2N2697 2N2698 2N2875 2N37 38
2N3739 p 33
2N3766 2N3767
2N3917
KM7007 KM700S

KM7009 KM7010 2N234A 2N235A 2N235B p 34
2N2S5A 2N2S5B 2N399 2N401 2N41S

2N419 2N420 2N420A 2Nl21S 2N 14S3 p 35 ZN 14S4 2N 14S5 2N 14S6 2N2308 2N28S7

Mfr.
TRWS Tl Tl Tl Tl
Tl Tl Tl Tl GE
FA FA Tl Tl SA
TRWS AMP TRWS VEC VEC
VEC KSC KSC KSC Tl
Tl Tl Tl Tl Tl
Tl Tl Tl Tl Tl
Tl Tl Tl Tl Tl
SOL SOL TR MO MO
MO MO FA KSC KSC
KSC KSC BE BE BE
BE BE BE BE BE
BE BE
sBvE
RCA
RCA RCA RCA STC TRWS

Type
npn,PL,si npn, P, si npn, P, si npn,P,si npn, P, si
npn, P, si npn,P,si npn,P,si npn,P ,si npn,si
npn,DPE,si npn,DPE,si npn,EP,si npn,EP,si npn,PE, si
npn,PL,si pnp,AJ,ge npn,PE,si npn,PE,si
npn,PE,si pnp,ge pnp,ge pnp,ge pnp,ge
pnp,ge pnp,ge pnp,ge pnp,ge pnp,ge
pnp,ge pnp,ge pnp,ge pnp,ge pnp,ge
pnp,ge pnp,ge pnp,ge pnp,ge pnp,ge
npn, si npn, si pnp,PLE,si npn,si npn,si
npn,si npn,si npn,OPE,si pnp,AJ,ge pnp,AJ ,ge
pnp,AJ,ge pnp,AJ,ge pnp,ge pnp,ge pnp,ge
ge,PNP pnp,ge -
-
npn,AL,ge npn,s!
npn,si npn,si npn,si npn npn,PL,si

60

Pc (W)
15 15 15 15 15
15 15 15 15 15
15 15 15 15 15
16 <"'· 16 17.5 17.5 17.5
17.5 20 20 20 20
20 20 20 20 20
20 20 20 20 20
20 20 20 20 20
20 20 20 20 20
20 20 20 20 20
20 20 25 25 25
25 25 25 25 25
25 25 25 25 25
25 25 25 25 25

MAX. RATINGS

W/ ac

VCEO

T. J

*VCBO

I,

(oc) (V) (A)

CHARACTERISTICS

1co

hie *hFE

*1ceo
tic ex (mA)

fae *fr
(kHz)

Package
Outline !TO-)

Remarks

0.1

175 *75 2.

*7 .5-75 0.01

1870

8

0.15

200 80

1

*25-75 0. 000025 *30

5

0.15

200 100 1

*25-75 . 000025 *30

5

0.15

200 80

1

*60-120 0. 000025 *30

5

0.15

200 100 1

*60-120 . 000025 *30

5

0. 15

200 80

1

0.15

200 100 1

0.15

200 80

1

0.15

200 100 1

0.0667 175 100 1

.200

150 *120 10

.200

150 *120 10

0.15

200 80

1

0.15

200 100 1

0.15

175 40

2

*25-75 . 000025 *30

tt

*25-75 . 000025 *30

tt

*60-120 . 000025 *30

tt

*60-120 0.000025 *30

*90

0.01

-

t-t

120

-

80,000

3

300

-

80,000

3

30-120 0.002

40,000

5

40-120 0.002

40,000

5

20 .. .120 0.0001

50, 000 -

ttMT 13 ttMT 13 ttMT 13 ttMT 13
SOT -9 package

.091

200 *100 1

*>10

-

10000

-

0.25

90 32

1

*30

-

10

-

0.1

200 40

1.0

[(~80

.2

-

-

.100

200 60

2.5 -

.000005 -

-

.100

200 60

2.5 -

.001

-

-

Special MT59 package

.100

200 40

2.5 -

.333

100 *30 3

*25

.333

100 *60 3

*21

.333

100 *80 3

*21

0.267

100 *40 3.5 *20

0,267

100 *60 3.5 *20

0.267

100 *80 3.5 *20

0.267

100 ·100 3.5 ·20

0.267

100 *40 3

18

0.267

100 *60 3

lS

0.267 100 ·so 3

lS

0.267

100 *100 3

lS

0.267

100 *40 3

lS

0.267 0.267

100 100

*·s6o0

3 3

lS lS

.001

-

1.0

4.0

1.0

4.0

1.0

4.0

0.125

-

0.125

-

0.125

-

0.125

-

0.125

-

0.125

-

0.125

-

0.125

-

0.125

-

0.125

-

0.125

-

-

13

13

13

-

SY, KSC, BE

-

SY, KSC, BE

-

'SY, KSC, BE

-

KSC, BE

-

KSC, BE

-

BE

-

KSC, BE

-

KSC, BE

-

KSC, SY, BE

-

KSC, SY, BE

-

KSC, SY , BE

0.267

100 *100 3

lS

0.267

100 *40 3.5

25

0.267 0.267

100 100

*·s6o0

3.5 3.5

25 25

0.267

100 *100 3.5

25

0.125

-

0.125

-

0.125

-

0.125

-

0.125

-

-

KSC, SY, BE

-

KSC, BE, NA

-

KSC, BE

-

KSC, BE

-

KSC, BE

0. 2

200 ·so 5. 0 *40-120 . 0001

20000

-

0. 2

200 *100 5. 0 *40-120 . 0001

20000

-

. 14

175 50

2

*15-60 .001

-

-

.133

175 225 .250 *40-120 0.1

*15000 66

.133

175 300 .250 *40-120 0.1

*15000 66

.133 .133

175 175

s6o0

1 1

*40-160 0.1 *40-160 0.1

*15000 66 *15000 66

5

150 40 10

10

.00001

*2500

3

-

100 30

3.0 -

-

6

t

'fMS-7

-

100 60

3.0

-

-

6

t

tMS-7

-

100 so

3.0 -

-

6

t

tMS-7

-

100 100 3.0 -

0.5

90 25

3

-

-

6
-

t

tMS-7

3

KSC

0.5

90 *50 3

-

7

-

3

KSC, ITT

0.5

90 *50 3

-

-

-

3

ITT

0.5

95 -

3

-

-

-

3

0.5

95 -

3

-

-

-

3

-

--

3

*34-40

-

-

3

KSC

-

-

-

3

31-36

-

-

3

KSC

-

--

5

*40

-

-

3

KSC, JTT

-

-

-

3

35

-

-

-

--

5

*40

-

-

-

--

5

*40

-

-

-

100 *45 3

*40-160 3

7

.143

200 40

3

*20-60 .015

40

3

KSC

3

ITT

3

s 3

STC

.143

200 55

3

*20-tiO .015

40

.143

200 40

3

*35-100 .015

40

.143 .143

200 200

s5o5

3 3

35-100 .015 *20-tiO .250

40 -

s

STC

s

STC

s s

STC STC

.143

200 *100 1.2

*15-SO

-

5000

-

MO

(see pages 4-9 for explanation of company abbreviations.)

ON READER-SERVICE CARD CIRCLE 19 ~

Analyzes both power and signal types at specified voltages and currents.
Continuously adjustable current - up to 30 amp collector. Voltage control for transistor supply electrodes.
Great flexibility allows plotting of transistor characteristic curves along with setting up nearly any type of transistor test. Input bias reversing switch gives added versatility. TESTS: DC Beta Test · AC Beta Test · ICEO Leakage Test · ICO Leakage Test · IEO Leakage Test · Zener Diode Test · Punch Through Test · Saturation Test · Floating Potential Test · Alpha Test · Diode and Rectifier Tests · SCR Tests
TRIPLETT ELECTRICAL INSTRUMENT COMPANY, BLUFFTON, OHIO

RANGES

~I_._··.

Input Current (Emitter or

Base):

Collector Current:

lceo, lco (lcbo): Collector
Voltage ~

Emitter or Base Voltage: Tetrode :

MODEL 349D·A

0·100· 300 ua, 0·1· 3·10·30 Ma, O·. l·. 3· 1·3 Amp. 0-300 ua , 0-1-3-10·30 Ma, o-.l·.3-l ·HO· 30 Amp.
0·6 Ma ; 0·600
ua, 0·60 ua , 0·6 ua.
00··13020vV, ,00· 1·620v,V,
0·6 V, 0-3 V, 0·1.2 V.
0·12 v, 0-1. 2 v.
0·10 V Ca l ibrat· ed Control. Shipping wt: 30 lbs.
Suggested U.S.A. User Net
. ..· . .$400.00

Power rcontinued)

Cross

Index Type

Key

Ha.

2N3018 2N 3021 2N3022 2N3023 2N3024 p 36 2N3025 2N3026 2N3230
2N323J

2N344J 2N3740 2N3741 2N3836
p 37 2N3837 40368 PT5694 T1156 Tll58
Tl539 Tl540 V-800 2N1755 2N 1756 p 38 2N 1757 2N J758 2N J759 2Nl760 2N 1761
2N J762 KM7000 KM7001 KM7002 40250
p 39 40310 403J2 40316 40324 2N J978
2N2J50 2N2151 2N2869 2N2870 2N2877 p 40 2N2878 2N2879 2N2880 2N2892 2N2893
2N3220 2N3221 2N3222 2N3744 2N37 45 p 41 2N 37 46 2N3747 2N3748 2N3749 2N3750
2N3751 2N3752 2N3850 2N3851 2N3852 p 42 2N3853 2N3996 2N3997 2N3998 2N3999

Mfr.

Type

BE

-

MO

pnp,AE,si

MO

pnp,AE,si

MO

pnp,AE,si

MO

pnp,AE,si

MO

pnp,AE,si

MO

pnp,AE,si

RCA npn,si·

RCA npn,si

RCA npn, si

MO pnp,si

MO pnp,si

Tl

npn,EP,si

Tl

npn,EP,si

RCA npn, si

TRWS -

Tl

pnp,ge

Tl

pnp,ge

Tl

pnp,ge

Tl

pnp,ge

VEG npn,PL,si

ITT -

ITT -

1T1 ITT ITT ITT ITT -

ITT -
KSC pnp,AJ,ge KSC pnp,AJ ,ge KSC pnp,AJ,ge RCA npn , si

RCA npn, si RCA npn,si
RCA npn, si
RCA npn,si FA npn,DP ,si

Tl

npn, TD, si

Tl

npn, TD, si

RCA pnp,AJ,ge

RCA pnp,A,ge

SOL npn,si

SOL npn,si SOL npn,si
SOL npn,si
FA npn,PE,si FA npn,PE,si

GE

npn ,si

GE

npn ,si

GE

npn,si

SOL npn,si

SOL npn,si

SOL npn,si
SOL npn,si SOL npn,si SOL npn,si SOL npn ,si

SOL npn,si SOL npn,si SSP npn,TDP
SSP npn,TDP SSP npn,TDP

SSP npn,TDP

Tl

npn,EP,si

Tl

npn, EP, si

Tl

npn,EP ,si

Tl

npn, EP ,si

62

M.AX. RATINGS

CHARACTERISTICS

1co

p
c (W)

VCEO

T.
J

*VC BO

I c

hie

W/ °C (oc) (V) (A) *h FE

*1c eo
t ic ex (mA)

fae *fr
(kHz)

Package Outline !TO-)

Remarks

25

-

-

*100 10

*40

-

25

1.67

175 30

3

*20-60 -

25

1.67

175 45

3

*20-60 -

25

1.67

175 60

3

*20-60 -

25

1.67

175 30 ' 3

*50-J80 -

25

1.67

175 45

3

*50-J80 -

25

1.67

175 60

3

*50-J80 -

25

0.143 200 60

7

*2,000 - O.l

20,000

25

0.143 200 80

7

*2,000 - 0.1

20,000

-

*

100,000 3

100,000 3

100,000 3

100,000 3

100,000 3

100,000 3

-

-

-

-

*MTIOA
Darlingtonlype, Tl Dari ington Type, Tl

25

0.143 200 140 3

*20-80 5

-

66

25

.143

200 60

1

*30-JOO 0.1

*4000

66

25

.143

200 80

1

*30-100 0.1

*4000

66

25

.143

200 60

7

*2 K-20 K O.OJ

40,000 -

Darlington

25

.143

200 80

7

*2 K-20 K 0.01

40,000 -

Darlington

25

0.143

200 55

3

*35 -100 0. 009

-

8

25

.143

200 40

2.0 10-80

2.0

3.0

-

MT59 package

25

.33

100 30

3

*25-75 .65

6

-

25

.33

100 60

3

*25-75 .65

6

-

25

.33

100 60

3.5 *30-75 1

6

25

.33

100 60

3.5 *30-75 1

6

25

.142

200 140 - -

.750

-

28

-

95 25

3

30

1

15

28

-

95 40

3

30

J

15

-

-

-

KSC

-

KSC

28

-

95 55

3

30

1

15

-

KSC

28

-

95 65

3

30

J

15

-

KSC

28

-

95 25

3

60

1

15

-

KSC

28

-

95 40

3

60

1

15

-

KSC

28

-

95 55

3

60

1

15

-

KSC

28

-

95 65

3

60

J

28

-

100 *60 3.0 -

-

28

-

JOO *100 3.0 J50

-

28

-

100 80

3.0 -

-

29

0.194 200 40

4

*25- JOO 1

J5

-

KSC

JO

t

tM S-7

9

t

tM S-7

-

t

tMS-7

-

66

29 29

0.16

200 35

4

*20-J20 0.01

*750

66

0.16

200 -

4

*20-120 o. 01

*750

66

VcER =60

29

0.16

200 40

4

*20- J20 0.01

*750

66

29

0.16

200 35

4

*20-120 0. 01

*750

66

30

0.172 200 *60 -

*30

.OJ

*50000 -

30

0. 4

175 80

2

*20·60 0. 01

*20

21

30

0. 4

175 80

2

*40- J20 0. 01

*20

tt

ttMT 21

30

-

JOO *60 JO

*90

0.5

-

3

LAN

30

-

100 50

10

*90

0.5

450

3

LAN

30

0.3

200 *80 5

*20-60 .OOOJ

30000

-

Tl, SSP

30

. 0.3

30

0.3

30

0.3

30

-

30

-

200 *80 5

200 *100 5

200 *100 5

200 80

-

200 80

-

*40-J20 .0001

50000

-

*20-60 .0001

30000

-

*40·J20 .0001

50000

-

*55

.0002

~0000

-

*80

0.0002 *50000 -

Tl, SSP Tl, SSP Tl, SSP
AMP AMP

30

0.4

J75 80

2

80

0.1

-

-

Tl

30

0.4

175 80

2

160

0.1

-

-

Tl

30

0.4

175 60

2

8·'

0.1

-

-

Tl

30

.3

200 *60 5

*20-60 .0001

*30,000 -

hex isolated col.

30

.3

200 *80 5

*20-60 .0001

*30,000 -

hex isolated col.

30

.3

200 *100 5

*20-60 .0001

*30,000 -

hex isolated col.

30 30 30

.3 .3 .3

200 *60 5 200 *80 5
200 *100 5

*40-120 .0001 *40-J20 .OOOJ *40-120 .0001

*40,000 *40,000
*40,000

---

hex isolated col.
hex isolated col. hex isolated col.

30

.3

200 *60 5

*100-300 .OOOJ

*50,000 -

hex isolated col.

30

.3

200 *80 5

*J00-300 .0001

*50,000 -

hex isolated col.

30

.3

200 *100 5

*100-300 .OOOJ

*50,000 -

hex isolated col.

30

0.4

200 *100 5

*J50

.0001

*40

59

30

0.4

200 *60 5

*90

.0001

*30

59

30

0.4

200 *60 5

*150

.0001

*40

59

30

0.4

200 *60 5

*90

.0001

*30

59

30

0.3

200 80

5

40-120 0.005

40,000 -

7/ 16 stud-lsol

30

0.3

200 80

5

80-240 0.005

40,000 -

7/ J6 stud-lsol

30

0.3

200 80

5

40-120 0.005

40,000 -

7/ 16 stud

30

0.3

200 80

5

80-240 ODDS

40,000 -

7/ J6 stud

(see pages 4-9 for explanation of company abbreviations.)

ELECTRONIC DESIGN

Power <continued)

Cross

Index Type

Key

Ha.

2N4075 2N4076 FT207A FT207B KM7011 p 43 KM7012 KM7013 KM7014 KM7015 KM7016
KM7017 OC26 2N538 2N538A 2N539 p 44 2N539A 2N540 2N540A 2N 1202 2N 1203
2Nl261 2N 1262 2N 1263 2Nl501 2N 1502 p 45 2N400 2N 1011 2N2836 2N3583 2N3584
2N3585 2N3878 40313 40318 40322 p 46 40328 40364 2N663 2N665 2N3154
2N3155 2N3156 2N3157 2N3158 2N4241 p 47 2N 1047 2Nl047A 2N1047B 2N 1047C 2N 1048
2N 1048A 2Nl048B 2N 1048C 2N 1049 2N1049A p 48 2Nl049B 2Nl049C 2N 1050 2Nl050A 2N10508
2Nl050C 2N 1647 2N 1648 2N 1649 2N1650 p 49 2N1690 2N1691 2N2018 2N2019 2N2020

Mir.

Type

FA

npn,DPE,si

FA

npn,DPE,si

FA npn,DPE,si

FA

npn,DPE,si

KSC pnp,AJ ,ge

KSC pnp,AJ,ge KSC pnp,AJ,ge KSC pnp,AJ,ge KSC pnp,AJ,ge KSC pnp,AJ,ge

KSC pnp,AJ ,ge AMP pnp,A,ge SOL pnp,ge SOL pnp,ge SOL pnp,ge

SOL pnp,ge SOL pnp,ge SOL pnp,ge SOL pnp,ge SOL pnp,ge

SOL pnp,ge SOL pnp,ge SOL pnp,ge SOL pnp,ge SOL pnp,ge

BE

-

BE pnp;ge

AMP pnp,AJ ,ge

RCA npn, si

RCA npn, si

RCA npn, si RCA npn, si RCA npn,si RCA npn,si RCA npn,si

RCA npn,si RCA npn, si DE pnp,AJ,ge DE pnp,AJ ,ge ITT -

ITT ITT ITT ITT AMP pnp, ge

Tl

npn,si

Tl

pnp,si

npn,si

Tl

npn,si

Tl

npn,si

Tl

npn,si

pnp,si

Tl

ripn,si

Tl

pnp,si

Tl

npn,si

npn,si

Tl

npn,si

Tl

npn,si

Tl

npn,si

npn,si

Tl

npn,si

TR

npn,PL,si

TR npn,PL,si

TR npn,PL;si

TR npn,PL,si

Tl

npn,si

Tl

npn,si

TR npn,PL,si

TR npn

TR npn,PL,si

May 17, 1966

MAX. RA TINGS

CHARACTERISTICS

1co

p
c
(W)

VCEO

T.
J

*VCBO

IC

hie

W/ °C (oc) (V) (A)

*hFE

* 1cEO tic EX
(mA)

lae *fr
(kHz)

Package
Outline !TO-)

Remarks

30

.171

200 80

3 . 30-90

.0001

30

.171

200 80

3

50-150 .0001

30

2.7

200 80

50

20

.0050

30

2.7

200 80

50

20

.0050

30

-

100 30

5.0 -

-

30

-

30

-

100 60 100 80

5.0 -
5.0 -

-
-

30

-

100 100 5.0 -

-

30

-

100 60

5.0 -

-

30

-

100 80

5.0 -

-

30

-

100 100 5.0 -

-

30

.9

90 32

3.5 *60

.20

34

0.46

100 *80 3.5 *20-50 2.

34

0.46

100 *80 3.5 *20-50 2

34

0.46

100 *80 3.5 *30-75 2

34

0.46

100 *80 3.5 *30/ 75 2

34

.46

100 *80 3.5 *45-113 2

. 34

0.46

100 *80 3.5 *45-113 2

34

0.46

100 *80 3.5 *200

2

34

0.46

100 *120 3.5 *25-75 2

34

0.46

100 *80 3.5 *20-50 2

34

0.46

100 *80 3.5 *30-75 2

34

0.46

100 *80 3.5 *45-113 2.

34

0.46

100 *60 3.5 *25-100 2

34

0.46

100 *40 3.5 *25-100 2

35

-

-

-

3

*30-40 -

35

0.5

95 *80 5

*30-75 15

35

.66

90 55

3.5 *30

.1

35

0. 2

200 175 *5

40

*10

35

0. 2

200 250 *5

*25-100 ·5

35

0.2

200 300 5

*25-100 *5

35

0.2

200 50

lO(peak) *50-200 *5

35

0.2

200 -

2

*40-250 *5

35 35

0.2 0.2

- 200 -
200

2 2

*40(rnin.) *5 *40(rnin. *5

35 35

0.2 0. 2

200 200 -

2 7

- *20(rnin.) *5
*35 -175

37.5

2

100 25

4

*25·75 4

37.5

2

100 40

5

*40-80 10

37.5

-

100 25

3

60

1

37.5

-

100 40

3

60

1

37.5

-

100 55

3

60

1

37.5

-

100 65

3

60

1

37.5

-

100 25

3

30

1

37. 5

0.5

100 *32 5.0 *50

45

40

0.228 200 *80 0.500 *12

0.015

40

0.228 200 80

0.500 *12

0.350

40

0.228 200 80

0.750 *12

0.050

40

0.228 200 80

1

*12

0.010

40

0.228 200 *120 0.500 *12

0.015

40

0.228 200 120 0.500 *12

0.350

40

0.228 200 120 0.750 *12

0.100

40

0.228 200 120 1

*12

0.010

40

0.228 200 *80 0.500 *30

0.015

40

0.228 200 80

0.500 *30

0.350

40

0.228 200· 80

0.750 *30

0.050

40

0-.220 200 . 80

1

*30

0.010

40

0.228 200 *120 0.500 *30

0.015

40

0.228 200 120 0.500 *30

0.350

40

0.228 200 120 0.750 *30

0.100

40

0.228 200 120 1

*30

0.010

40

.267

175 *80 3

*15-45

.1

40

.267

175 120 3

*15-45

.1

40

.267

175 *80 3'

*30·90 .1

40

.267

175 120 3

*20

.1

40

0.228 200 80

500 *20

0.015

40

0.228 200 120 500 *20

0.015

40

.267

175 *150 2

*15

.1

40

.267

175 *200 2

*15

.1

40

.267

175 *150 2

*25

.1

*30,000 59

*30,000 59

*3.5

59

*3500

-

8

t

8

t

8

t

8

t

10

t

10

t

10

t

150

3

200

-

200

-

200

-

200

-

200

-

200

-

200

-

200

-

200

-

200

-

200

-

200

-

200

-

-

3

-

3

-

3

-

66

-

66

*10.000 66

*60, 000 66

-

66

-

66

-

66

-

66

*15

66

15

3

20

3

15

-

15

-

15

-

15

-

10

-

5

3

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3,000

-

2,000

-

3,000

-

2,000

-

-

-

-

-

2,000

-

2,000

-

3,000

-

t MS-7
tMS-7 tMS-7 tMS-7 tMS-7 tMS-7
tMS-7
KSC KSC KSC
KSC KSC
KSC KSC
KSC KSC KSC KSC KSC
KSC DE, KSC, MO, ITT KSC
Ve ER =300 VcER=300 VcER=300
lcER=300 VCE; =60; le ER =0.5 KSC KSC, MO KSC
KSC KSC KSC KSC
STC, TR STC, TR T.I
STC;TR
STG;"'TR TI
STC, TR STC, TR
Tl
STC, TR STC, TR STC, Tl
STC STC STC STC
STC STC

(see pages 4-9 for explanation of company abbreviations.)

63

Power <continued;

Cross

Index Type

pc

Key

Ha.

Mfr.

Type

(W)

2N2021 2N2632
2N2633 2N2634 2N2828
p 50 2N2829
2N2902
2N3551 2N4004 2N4005

TR npn,PL,si

40

SOL npn, si

40

SOL npn, si

40

SOL npn, si

40

STC npn

40

STC npn

40

Tl

npn, TD, si

40

Tl

npn, TD, si

40

Tl

npn,EP,si

40

Tl

npn,EP ,si

40

2N3552 2N3851 PT5692 2N2266 2N2267
p 51 2N2268 2N2269 2N 1120 2N456A
2N457A

Tl

npn, EP, si

40

Tl

npn, EP,si

40

TRWS -

40

SOL pnp,ge

43

SOL pnp,ge

43

SOL pnp,ge

43

SOL pnp,ge

43

BE pnp,ge

45

Tl

pnp,ge

50

Tl

pnp,ge

50

2N458A 2N463 2N678 2N678A p 52 2N678B
2N678C 2Nl014 2Nl021 2Nl022 2Nl069

Tl

pnp,ge

50

t KSC pnp,AJ,ge

50

BE pnp,ge

50

BE pnp,ge

50

BE pnp,ge

50

BE pnp,ge

50

pnp,ge

50

Tl

pnp,ge

50

Tl

pnp,ge

50

npn,ge

50

2N 1070 2Nl430 2Nl722 2Nl722A 2Nl723 p 53
2N 1724 2Nl724A
2Nl725
2N 1905 2N 1906

npn,ge

50

BE -

50

Tl

npn,si

50

Tl

npn,si

50

Tl

npn,si

50

Tl

npn,si

50

Tl

npn,si

50

Tl

npn,si

50

RCA pnp, AJ, ge

50

RCA pnp, AJ, ge

50

2N2811

SOL npn, si

50

2N2812

SOL npn, si

50

2N2813

SOL npn, si

50

2N2814

SOL npn, si

50

2N236A

BE pnp,ge

60

p 54

2N236B

BE pnp,ge

60

2N 1073

BE pnp, ge

60

2N 1073A

BE pnp, ge

60

2N 1073B

BE pnp, ge

60

2N 1079

TR npn,PL,si

60

2N 1080 2N 1210 2N 1211
2Nl616 2Nl618 p 55
2N 1620 2N 1907 2N 1908 2N2288 2N2289

TR npn,PL,si

60

TR npn,PL,si

60

TR npn,PL,si

60

TR npn,PL,si

60

TR npn,PL,si

60

TR npn,PL,si

60

Tl

pnp,ge

60

Tl

pnp,ge

60

BE

-

60

BE -

60

2N2290 2N2291 2N2292 2N2293 2N2294 p 56 2N2295 2N2296
2N2137 / N2137 A
2N2138 J

BE

-

60

BE -

60

BE. -

60

BE

-

60

BE -

60

BE

-

60

BE

-

60

MO

pnp,AJ,ge

62.5

MO

pnp,AJ ,ge

62.5

MO

pnp,AJ ,ge

62.5

t'

64

MAX. RATINGS

CHARACTERISTICS

W/°C
.267 . 4 . 4 . 4 .229

VCEO

T. )

*VCBO

IC

(oc) (V) (A)

175 *200 2

200 *90 5. 0

200 *120 5. 0

200 *150 5. 0

200 60

3

hfe
*hFE
*25 *40-120 *40-120 *40-120 *20-60

1co *1cEO tic EX
(mA)
.1 0. 0001 0. 0001 0. 0001 -

fae *fr
(kHz)
3000 20000 20000 20000
-

Package Outline
(TO-)
-
-
*

Remarks ·~·Hex, Tl

.229

200 60

3

*20-60 -

0. 228 200 120 2

*30-90 0. 25

0.53

175 60

12

*20-90 10

0.4

200 80

20

*30-150 1

0.4

200 100 20

*30-150 1

-

*

*2

57

*40

-

30,000 -

30,000 -

*'~·Hex, Tl
Thin-Pac Thin·Pac

0.53

175 80

12

*20-90 10

0.53

175 60

12

*20-90 10

.229

200 40

4.0 10-80

4.0

0.5

125 *100 5

*25-75 2

0.5

125 *120 5

*25-75 2

40,000 -

40,000 -

2.5

-

200

-

200

-

lsol Thin-Pac lsol Thin-Pac MT59 package

0.5

125 *100 5

*25-75 2

200

-

0.5

125 *120 5

*25-75 2

200

-

0.667 95 *80 15

30-120 15

-

41

MO, ITT

0.667

100 *40 7

*40

0.5

-

3

DE, BE, MO, ITT

0.667 100 *60 7

*40

0.5

-

3

DE, KSC, BE, MO, ITT

0.667 100 *80 7

*40

0.5

4

.67

100 *60 5

*20-100 0.3

5

0.66

100 *15 15

*50-100 2

-

0.66

100 *25 15

*50-100 2

-

0.66

100 *60 15

*50-100 5

-

3

DE, BE, MO, ITT

32

t WE Orig Reg

3

KSC, Tl, ITT

3

Tl, ITT

3

Tl, ITT

0.66

100 *60 15

*50-100 5

-

100

-

*100 -

*20

-

-

0.714 75 *100 5

*60

UlO

-

0.714 95 *120 5

*60

0.13

-

.33

175 45

4

*10-50 l

10

3

Tl, ITT

-

KSC

3

DE, KSC, BE, MO, ITT

3

DE, KSC, BE, MO, ITT

3

STC I BE

.33

175 45

4

*10-50 1

10

3

STC, BE

-

-

40

10

*30-100 -

-

41

0.667

175 80

5

*20

0.5

-

53

STC, TR, BE

0.67

175 120 5

*30

0.1

-

53

BE

0.67

175 80

5

*50

0.1

-

53

BE

0.667

175 80

5

*20

0.5

-

-

STC, TR , BE, MO

0.67

175 120 5

*30

0.1

-

-

BE

0.67

175 80

5

*50

0.1

-

-

BE.MO, TR

-

100 *60 3

*90

0. 15

*7500

3

LAN

-

100 *100 3

*125

0.15

*7500

3

LAN

0. 5

200 *80 10

*20-60 . 0001

20000

-

Tl

0. 5

200 *80 10

*40-120 . 0001

30000

-

Tl

0. 5

200 *120 10

*20-60

. 0001

20000

-

Tl

0. 5 0.83

- 200 *120 10

100

3

*40-120 . 0001

-

-

30000 -

61 3

Tl KSC

0.83

100 -

3

-

-.

0. 833 *110 *·25 -10 *20-60 15

0. 833 *llO *-60 -10 *20-60 20

0. 833 +llO *-100 -10 *20-60 20

.34

175 *60 3

*20-80 10

-

3

-

41

-

41

-

41

10,000 53

DE, MO DE, MO DE, MO

.34

175 *60 3

*20-80 10

.40

175 60

5

*15-75 10

.40

175 *80 5

*15-75 10

.40

175 60

5

*15-75 10

.40

175 *100 5

*15-75 10

10,000 53

3,000

-

3,000

53

3,000

-

3,000

-

BE BE, Tl STC, BE, Tl
STC, BE, Tl

.40

175 *100 5

1'15-75 10

2

100 *100 20

*20

0.5

2

100 *130 20

*20

0.5

-

-

-

10

*20-60

-

-

-

-

10

*20-60

-

-

-

-

10

*20-60

-

-

--

10

*50 -120 -

-

-

-

10

*50-120 -

-

--

10

*50-120 -

-

-

-

10

*50-120 -

-

-

-

10

*50-120 -

-

-

-

10

50-120 -

0.83

100 20

3

*30-60 2

0.83

100 20

3

*30-60 2

0.83

100 30

3

*30-60 2

3,000

53

STC, BE, Tl

-

3

-

3

-

3

-

3

-

3

-

3

ETC

-

3

ETC

-

3

ETC

-

41

-

41

-

41

20

3

20

3

20

3

(see pages 4-9 for explanation of company abbreviations.)

ELECTRONIC DESIGN

Power (continued )

Cross

Index Type

Key

No.

2N2138A 2N2139 2N2139A 2N2140 2N 2140A p 57 2N2141 2N2141A 2N2142 2N2142A 2N2143
2N2143A 2N2144 2N 2144A 2N2145 2N 2145A p 58 2N2146 2N2146A 2N554 2N555 2N4070
2N4071 2N 1430 2N3223 2Nl487 2N 1488 p 59 2Nl489 2N1490 2N 15ll 2Nl512 2Nl513
2Nl514 2N 1703 2N2912 40369 3N45 p 60
3N46 3N47 3N48 DTG600 DTG601
DTG602 2N3264 2N3266 2N389 2N424 p 61
2N1210 2N 1235 2Nl260 2N2383 2N2384
2N2526 2N2527 2N2528 2N2832 2N2833 p 62 2N2834 2N2908 2N3577 2N36ll 2N3612
2N3613 2N3614 2N3615 2N3616 2N3617 p 63 2N3618 MP2060 MP2061 MP 2062 MP 2063

p c

Mfr.

Type

(W)

MO pnp,AJ ,ge

62.5

MO pnp,AJ,ge

62.5

MO pnp,AJ,ge

62.5

MO

pnp,AJ,ge

62.5

MO pnp,AJ,ge

62.5

MO pnp,AJ,ge

62.5

MO pnp,AJ,ge

62.5

MO pnp ,AJ,ge

62.5

MO pnp,AJ,ge

62.5

MO pnp,AJ,ge

62.5

MO pnp,AJ ,ge

62.5

MO

pnp,AJ,ge

62.5

MO

pnp,AJ,ge

62.5

MO pnp,AJ,ge

62.5

MO pnp,AJ,ge

62.5

MO pnp,AJ,ge

62.5

MO pnp,AJ,ge

62.5

MO pnp,AJ,ge

65

MO pnp,AJ,ge

65

SOL npn,si

65

SOL npn,si

65

BE pnp,ge

70

GE npn,si

70

RCA npn,si

75

RCA npn,si

75

RCA npn,si

75

RCA npn,si

75

RCA npn,si

75

RCA npn,si

75

RCA npn,si

75

RCA npn,si

75

RCA npn,si

75

MO

pnp,EP,ge

75

RCA npn,si

75

SOL pnp,ge

75

SOL pnp,ge

75

SOL pnp,ge

75

SOL pnp,ge

75

DE

pnp,PADT, ge 75

DE

pnp,PADT,ge 75

DE

pnp,PADT,ge 75

RCA npn , si

t 84

RCA npn, si

84

Tl

npn,si

85

Tl

npn,si

85

Tl

npn, TD, si

85

Tl

npn,si

85

Tl

npn,si

85

STC npn

85

STC npn

85

MO pnp,AO,ge

85

MO pnp,AD,ge

85

MO pnp,AD,ge

85

MO

pnp,EP,ge

85

MO pnp, EP ,ge

85

MO pnp,EP,ge

85

STC npn

85

Tl

npn, TD, si

85

MO pnp,AJ,ge

85

MO

pnp,AJ,ge

85

MO pnp,AJ ,ge

85

MO pnp,AJ,ge

85

MO pnp,AJ,ge

85

MO pnp,AJ;ge

85

MO pnp,AJ ,ge

85

MO pnp,AJ,ge

85

MO

pnp,AJ ,ge

85

MO pnp,AJ,ge

85

MO

pnp,AJ ,ge

85

MO pnp,AJ,ge

85

May 17, 1966

MAX. RATINGS

W/ °C

VCEO

T.
J

*VCBO

I c

(oc) (V) (A)

CHARACTERISTICS

lco

hfe *hFE

*1cEO tic EX
(mA}

fae *fr
(kHz)

Package
Outline !TO-)

Remarks

0.83

100 30

3

*30-60 2

0.83

100 45

3

*30-60 2

0.83

100 45

3

*30-60 2

0.83

100 60

3

*30-60 2

0.83

100 60

3

*30-60 2

0.83

100 65

3

*30-60 2

0.83

100 65

3

*30-60 2

0.83

100 20

3

*50-100 2

0.83

100 20

3

*50-100 2

0.83

100 30

3

*50-100 2

0.83

100 30

3

*50-100 2

0.83

100 45

3

*50-100 2

0.83

100 45

3

*50-100 2

0.83

100 60

3

*50-100 2

0.83

100 60

3

*50-100 2

0.83

100 65

3

*50-100 2

0.83

100 65

3

*50-100 2

0.72

90 *15 3

55

10

0. 72

90 *30 3

55

20

.66

200 ·120 10

*40-120 .0001

.66

200 *200 10

*40-120 .0001

0.833

llO 100 10

*30-90

-

0.4

175 60

2

160

0.1

.429

200 40

6

*15·45 .025

.429

200 55

6

*15-45 .025

.429

200 40

6

*25-75 .025

.429

200 55

6

*25-75 .025

.429

200 40

6

*15-45 .025

.429

200 55

6

*15-45 .025

.429

200 40

6

*25-75 .025

.429

200 55

6

*25·75 .025

200

.429 40

5

*15-60 .2

1

110 6

25

*75

0.2

0.429 200 55

3

*25 -75 0.01

1

100 *60 12

*30-120 3

1

100 *80 12

*20-80 3

1

100 *40 12

*30-120 3

1

100 *60 12

*20-80

3

1. 0

110 *90 25

115

-

1.0

110 90

25

115

-

1. 0

110 100 25

115

-

0. 66

200 90

25

*20-80 10

0.66

200 90

25

*20-80

10

0.485 200 -

1.5 12

-

0.485 200 -

0.75 12

-

0. 425 200 60

2

0.485 200 *100 2

0.485 200 ·120 2

.5

200 60

3

.5

200 60

3

*15

0. 25

*12

10

*12

10

*20-60 -

*20-60 -

1

110 80

10

*20-50 3

1

110 120 10

*20-50

3

1

110 160 10

*20-50

3

1

llO 50

20

*25-100 .3

1

110 75

20

*25- 100 .3

1

110 100 20

*25-100 .3

.45

200 *80 5

*12-60 -

0. 565 175 80

2

*12-60 0. 1

1

110 25

7

*35-70 0.04

1

llO 35

7

*35-70 0.04

1

llO 25

7

*60-120 0.04

1

110 35

7

*60-120 0.04

1

llO 50

7

*30-60 0.06

1

llO 60

7

*30-60 0.06

1

llO 50

7

*45-90 0.06

1

llO 60

7

*45-90 0.06

1

110 25

7

*30-200 0.06

1

110 35

7

*30-200 0.06

1

llO 50

7

*30-200 0.06

1

110 60

7

*30-200 0.06

20

3

20

3

20

3

20

3

20

3

20

3

20

3

20

3

20

3

20

3

20

3

ETC

20

3

20

3

ETC

20

3

ETC

20

3

ETC

20

3

20

3

6

3

6

3

*20,000 3

ETC
ETC ITT DE, KSC, ITT

*20,000 3

-

41

-

-

30

3

30

3

Tl STC, BE, Tl STC, BE, Tl

30

3

STC, BE, Tl

30

3

STC, BE, Tl

30

36

STC

30

36

STC

30

36

STC

30

36

STC

25

36

STC

-

8

75w@ 35° C

-

3

600

15

300

15

500

15

300

15

-

3

-

3

-

3

-

-

tTc= 75C, Tl

-

63

Tl

-

53

TR, STC , BE

-

53

TR, STC , BE

*2

53

-

53

-

53

-

-

STC

-

*

*11 / ,."

Hex

12

3

12

3

12

3

50

3

50

3

50

3

-

53

*10

53

-

3,41

-

3,41

-

3,41

-

3.41

-

3,41

-

3.41

-

3.41

-

3.41

-

3

-

3

-

3

-

3

(see pages 4-9 for explanation of company abbreviations.)

65

FOUR
SPECIALISTS·
(and what they can do for you)

These four high power Nu-Base germanium transistors were created to relieve some special problems where reliable peak power handling is a requirement. Each is in a class by itself with special benefits for ignition, TV horizontal sweep circuits and high power audio output (tentative specifications are provided).
These are rugged, durable transistors with built-in protection against secondary b~eakdown (thanks to Delco's Hydrokinetic Alloy process). Extreme parameter stability is a result of our Surface Passivation and Ambient Control (SPAC).
THE DTG-1110
This is a 200-volt 15-amp transistor with high power dissipation characteristics, low thermal resistance and a rugged performance record.

The drive requirements for your circuits are substantially reduced because of the high saturated current gain of this special application transistor.
THE DTG-1010 A 325-volt 15-amp transistor, this device's higher voltage offers many advantages. It's ideal for switching high inductive loads as found in many CRT deflection circuits.
THE DTG-1200 With a (VCE Sus) rating of -120 volts, it offers excellent gain, high speed and high sustaining voltage characteristics.

-24VDC DTG-1110

ng:~:cr.

II

II

II

16KV

::

.,,.

ANODE

::

VOLTAGE

DAMP~
~~F~'.~

--:-

COILS ~

TV horizontal deflection incorporating the DTG~1110.
66

POINTS

100V ZENER
START +12V

T

T

1

Automobile ignition circuit with the DTG-1200. ELECTRONIC DESIGN

It's the ideal transistor for an ignition circuit. Also can be used in fluorescent light power inverter circuits. Mobile or portable operation is possible and fluorescent tube efficienqy is improved due to higher oscillation frequency.
DTG-1010
~ g200~~~~
~
0 w I-
~ 100

.-----------+-----<1+ 50V, 0.47Jl. 5W DTG-1108
750Jl. 5W

0.47Jl. 5W

DTG-1108

750Jl. 5W .___ _ _ _ _ _ _ __.,._ _---I~ -

50V.

This two-stage output circuit produces well in excess of 50 watts RMS audio power with a simple drive requirement.
THE T0-3 PACKAGE
Delco Radio's T0-3 package wraps up this group of transistors.

15ma COLLECTOR CURRENT

8000ma 1OOOOmQ

Tested sustaining voltage areas of the DTG-1110, DTG-1010 and DTG-1200.

THE DTG-110B

The DTG_,110B is a high power transistor which will substantially reduce component costs and improve the reliability of quality home entertainment audio output circuits. It's designed especially for use in high fidelity amplifiers.
The linear gain and the specific gain band-width product of the DTG-110B offer low distortion and improved amplifier gainphase characteristics.
Exceptional efficiency in the driver stages is possible because of the DTG-110B's superb transconductance properties.

OJ

0

With its solid copper base (1), maximum thermal resistance is just 0.8° per watt, arid freedom from conventional weld contamination is assured with Delco cold weld construction (2). The T0-3 heavy-duty connectors (3) offer high current ruggedness, and the large germanium wafer (4) delivers high continuous and peak power handling ability.
Totally, four Nu-Base specialists in Delco T0-3 packages. For data, prices and delivery, cail one of our sales offices or your Delco Radio Semiconductor Distributor.

DTG-1110

DTG-1010

Collector Emitter Voltage (VcE Sus) Collector to Emitter Voltage (VCEX)

-200V

--325V

Collector Emitter Voltage (VCEO)

*Emitter Diode Voltage (VEBO)

-1.0V

-1.0V

Collector Current (I c)

-15A

-15A

Base Current (I B)

-3A

-3A

Maximum Junction Temperature

110 °c

110 °c

Minimum Junction Temperature

-65 °C

-65 °C

Lead Temperature Vis" ± V32 11 from case for 2 seconds

245°C

245°C

' *This voltage can be exceeded provided th e maximum IB and device dissipation limits are not exceeded.

DTG-1200 -i20V
-1.0V -15A -3A 110 °c -65 °C 245°C

I DTG-1 lOB

-40V

-90V

-40V

-2V

-25A
I

I
I

-5A

110°c

-65 °C

245 °C

FIELD
SALES OFFICES

UNION , NEW JERSEY' DETROIT, MICHIGAN

Box 1018 Chestnut Station 57 Harper Avenue

(20 1) 687-3770

(313) 873-6560

SYRACUSE , NEW YORK CHICAGO , ILLINOIS*

1054 James Street (315) 472- 2668

5151 N. Harlem Avenue (312) 775-5411

SANTA MONICA, CALIFORNIA * 726 Santa Monica Blvd. (213) 870-8807
General Sales Office: 700 E. Firmin , Kokomo , Ind. (317) 457-8461-Ext. 2175

DELCO RADIO

*Office includes field lab and resident engineer for application assistance.

Division of General Motors, Kokomo, Indiana

ON READER-SERVICE CARD CIRCLE 20

May 17, 1966

67

Power <continued)

Cross

Index Type

Key

Ho.

2Nl76 2Nl78 2N250A 2NZ51A 2NZ57 p 64 2N268 2N268A 2NZ97 A 2N350A ZN351A
ZN375 2N376A 2N627 ZN628 ZN629 p 65 ZN637 ZN637A 2N637B ZN63B ZN63BA
ZN638B 2N669 ZN677 ZN677A ZN677B
p 66 2N677C ZN 1031 ZN1031A 2Nl031B 2Nl031C
ZN103Z 2Nl03ZA ZN103ZB ZN103ZC ZN 1136 p 67 ZN1136A ZN 1136B ZN1137 ZN1137B ZN113B
ZN113BA 2Nll3BB 2N 1146 ZN1146A ZN1146B p 6B 2Nll46C 2N 1147 2Nll47A ZN 11478 2Nll47C
2N 116Z 2Nll62A 2Nll63 2Nll63A 2Nll64 p 69 2Nll64A 2Nll65 2Nll65A 2Nll66 2Nll66A
2Nll67 2Nll67A 2N 1359 2N 1360 ZN 1362 p 70 2Nl363 2N1364 2N 1365 2N 1529 2N1529A

Mfr.

Type

MO pnp,AJ,ge

MO pnp,ge

Tl

pnp,ge

Tl

pnp,~e

CL -

ITT -
ITT ITT -
MO pnp,AJ,ge MO pnp,AJ ,ge

MO pnp, AJ, ge MO pnp,AJ,ge MO pnp,AJ,ge MO pnp,ge MO pnp,AJ,ge

BE -
BE BE -
BE -
BE -

BE MO pnp,AJ ,ge BE pnp,ge BE pnp,ge BE pnp,ge

BE pnp,ge BE pnp,ge BE pnp,ge BE pnp,ge BE pnp,ge

BE pnp,ge BE pnp,ge BE pnp,ge BE pnp,ge BE -

BE -
BE BE BE -
BE -

BE BE -
ITT -
ITT -
ITT -

ITT ITT ITT ITT ITT -

MO pnp,AJ,ge MO pnp,AJ ,ge MO pnp,AJ,ge MO pnp,AJ ,ge MO pnp,AJ ,ge

MO pnp,AJ ,ge MO pnp,AJ ,ge MO pnp,AJ,ge MO pnp,AJ ,ge MO pnp,AJ,ge

MO pnp ,AJ ,ge MO pnp,AJ ,ge MO pnp,AJ,ge MO pnp,AJ ,ge MO pnp,AJ ,ge

MO pnp,AJ ,ge MO pnp,AJ,ge MO pnp,AJ ,ge MO pnp,AJ,ge MO pnp,AJ ,ge

68

MAX. RA TINGS

CHARACTERISTICS

1co

p c

VCEO

T. J

*VCBO

IC

hfe

* 1cEO
tic EX

fae Package

*fT

Outline

(W)

W/ °C (oc) (V) (A)

*hFE

(mA)

(kHz) !TO-)

Remarks

90

1.2

100 *40 3

*25-90 -

7

90

1.43

90 30

3

*15·45 3

5

90

0.42

100 *40 7

*35

1

-

90 90

1.2
-

100 *60 7

*35

100 35

5

-

2 z

5

90

-

90

-

90

-

100 60

5

-

100 60 100 60

5 5

2zo0

z z
2

6
-

90

1.2

100 *50 3

Z0-60

3

5

90

1.Z

100 *50 4

*Z5-90 3

5

90

1.2

100 ·so 3

*35-90 zo

7

90
90 90

l.Z
1.Z 1.Z

100 *50 5 100 *40 10 100 *60 10

*35-lZO *10-30
*10-30

z3 o zo

5
8 8

90

1.2

100 *80 10

*10-30 20

8

3

DE, KSC, ITT

3

KSC

3

KSC, BE, ITT

3

KSC, BE, ITT

3

KSC, BE

3

KSC, BE

3

KSC, BE

3

MO, KSC, BE., DE

3

KSC, BE

3

KSC, ITT

3

3

KSC, ITT

3

KSC

3

KSC

3

KSC

90

-

-

30

5

30·60

-

-

3

KSC

90

-

-

55

5

*30-60

..,.

-

3

KSC

90

-

-

65

5

*3Q.60 -

-

3

KSC

90

-

-

30

5

*Z0-40 -

-

3

KSC

90

-

-

65

5

*30-60 -

-

3

KSC

90

-

-

65

5

*Z0·40 -

-

3

KSC

90 90

1.6 0.66

100 100

*zo40

3 15

90 *Z0-60

3 -

5
-

3

DE, KSC

3

KSC, Tl, ITT

90

0.66

100 30

15

*Z0-£0 -

-

3

KSC, Tl, ITT

90

0.66

100 60

15

*ZQ.60 -

-

3

KSC, Tl, ITT

90

0.66

100 70

15

*Z0-60 -

-

90

1.25

100 *50 15

*Z0·60

15

-

90

1.25

100 *60 15

*Z0-60 15

-

90

1.25

100 *90 15

*Z0-£0

15

-

90

1.Z5

100 *100 15

*ZQ.60

15

-

3

KSC, Tl, ITT

41

TL, ITT

41

Tl, ITT

41

Tl, ITT

41

Tl, ITT

90

1.25

100 *50 15

*50-100 15

-

90

1.25

100 *60 15

*50-100 15

-

90

1.25

100 *90 15

50-100 15

-

90

1.Z5

100 *100 15

*50-100 15

-

90

-

-

30

5

*50·100 -

-

41

ITT

41

ITT

41

ITT

41

ITT

3

KSC, ITT

90

-

-

55

5

*50-100 -

-

3

KSC, ITT

90

-

-

65

5

*50·100 -

-

3

KSC, ITT

90

-

-

30

5

75-150 -

-

3

KSC, ITT

90

-

-

65

5

*75-150 -

-

3

KSC, ITT

90

-

-

30

5

100-ZOO -

-

3

KSC, ITT

nn JU

-

-

55

5

100-200 -

-

90

-

90

-

-
100

6z5o

5 15

100-ZOO -

!iO

4

-
4

90

-

100 30

15

-

4

4

90

-

100 60

15

60

4

4

3

KSC, ITT

3

KSC, ITT

3

BE

3

KSC , BE

3

KSC, BE

90

-

90

-

100 100

7z.oS

15 15

60 60

4 4

4 4

90

-

100 30

15

-

4

4

90

-

100 60

15

60

4

4

90

-

100 75

15

60

4

4

3

KSC, BE

3

BE, Tl

3

KSC, BE, Tl

3

KSC , BE, Tl

3

KSC, BE , Tl

90

1.2

100 *50 25

*65

3

4

-

BE, ITT

90

1.2

100 *50 25

*65

-

4

3

BE

90

l.Z

100 *50 25

*65

-

4

3

BE, ITT

90

1.2

100 *50 Z5

*65

-

4

3

BE

90

1.2

100 *BO 25

*65

-

4

3

BE, ITT

90

l.Z

100 *80 25

65

-

4

3

BE

90

1.2

100 *BO 25

*65

-

4

3

BE, ITT

90

1.2

100 *BO Z5

*65

-

4

3

BE

90

1.2

100 *100 25

*65

-

4

3

BE, ITT

90

1.2

100 *100 25

*65

-

4

3

BE

90

1.2

100 *100 Z5

*65

-

90

1.2

100 *100 25

*65

-

90

1.2

100 *50 3

*35-90 3

90

1.2

100 *50 3

*60-140 3

90

1.2

100 *100 3

*35-90 3

4

3

BE, ITT

4

3

BE

10

3

KSC, BE

B.5

3

KSC, BE

10

3

KSC, BE

90

1.2

100 *100 3

*60-140 3

90

1.2

100 *120 3

*35-90 3

90

1.2

100 *lZO 3

*60-140 3

90

1.2

100 *40 5

*20

2

90

1.2

100 *40 5

*20

2

B.5

3

KSC, BE

10

3

KSC, BE

8.5

3

KSC, BE

10

3

KSC, BE

10

3

KSC, BE

(see pages 4-9 for explanation of company abbreviations.)

ELECTRONIC DESIGN

Power <continued)

Cross

Index Type

Key

No.

2NlS30 2NlS30A 2Nl531 2NlS31A 2N!S32 p 71
2Nl532A 2NlS33 2NlS34 2Nl534A 2NlS35
2NlS36 2N 1S36A 2NlS37 2NlS37A 2Nl53S p 72 2N 1S39 2NlS39A 2Nl540 2N !S40A 2Nl541
2NlS41A 2N 1S42 2NlS42A 2NlS43 2N!S44 p 73 2N!S44A 2Nl545 2N !S45A 2NlS46 2N 1546A
2N 1547 2Nl547A 2N 1S4S 2N 1S49 2NlS49A
p 74 2Nl550 2Nl5Sl 2NlS51A 2NlSS2 2NlSS2A
2NlSS3 2Nl5S3A 2NlSS4 2NlSS4A 2N lSSS p 7S 2NlSSSA 2NlSS6 2NlSS6A 2NlSS7 2NlSS7A
2N lSSB 2NlSSSA 2NlSS9 2NlSS9A 2NlS60 p 76 2NlS60A 2N2061A 2N2062A 2N2063A 2N2064A
2N206SA 2N2066A 2N2423 DTG411 3N49 p 77 3NSO 3NS1 3NS2 2N22S5 2N22S6

MAX. RATINGS

CHARACTERISTICS

Mfr.

Type

pc (W)

T.
J

VCEO *VCBO

I c

hie

W/ ac (oc) (V) (A) *hFE

1co *1cEO tic EX
(mA)

fae
*fr (kHz)

Package Outline (TO-)

Remarks

MO pnp,AJ,ge

90

1.2

100 *60 5

·20

2

MO pnp,AJ,ge

90

MO pnp,AJ,ge

90

MO pnp,AJ,ge

90

MO pnp,AJ,ge

90

1.2 1.2 1.2 1.2

100
100
100 100

·*·ss6oo0
·100

5 5
5 s

·20 ·20
*20 *20

2 2 2 2

MO pnp,AJ,ge

90

1.2

100 ·100 5

·20

2

MO pnp,AJ ,ge

90

1.2

100 *120 5

*20

2

MO pnp,AJ,ge

90

1.2

100 *40 5

*35

2

MO pnp,AJ,ge

90

1.2

100 *60 5

·35

2

MO pnp,AJ,ge

90

1.2

100 *60 5

*35

2

MO pnp,AJ,ge

90

MO pnp,AJ,ge

90

1.2 1.2

100 100

··ssoo

5 5

·35 *35

2 2

MO pnp,AJ,ge

90

1.2

100 ·100 5

·35

2

MO pnp,AJ,ge

90

1.2

100 *100 5

*3S

2

MO pnp,AJ,ge·

90

1.2

100 ·120 5

*35

2

MO pnp,AJ,ge

90

1.2

100 *40 5

*50

2

MO pnp,AJ,ge

90

1.2

100 ·40 5

*50

2

MO pnp,AJ,ge

90

MO pnp,AJ,ge

90

1.2 1.2

100 *60 100 *60

s 5

*50 *50

2 2

MO pnp,AJ,ge

90

1.2

100 *SO 5

*50

2

MO pnp,AJ,ge

90

1.2

100 *SO 5

·so

2

MO pnp,AJ,ge

90

MO pnp,AJ,ge

90

1.2 1.2

100 *100 5 100 ·100 5

*·s5o0

2 2

MO pnp,AJ,ge

90

1.2

100 ·120 5

*50

2

MO pnp,AJ,ge

90

1.2

100 *40 5

·75

2

MO pnp,AJ,ge

90

1.2

100 *40 5

·75

2

MO pnp,AJ,ge

90

MO pnp,AJ,ge

90

1.2 1.2

100 *60 100 *60

s 5

*7S ·75

2 2

MO pnp,AJ,ge

90

MO pnp,AJ,ge

90

1.2 1.2

100 100

·*sSoO

s 5

*7S *7S

2 2

MO pnp,AJ,ge

90

1.2

100 ·100 5

·75

2

MO pnp,AJ,ge

90

1.2

100 *100 5

·75

2

MO pnp,AJ,ge

90

1.2

100 ·120 5

·75

2

MO pnp,AJ,ge

90

1.2

100 20

15

*10

3

MO pnp,AJ,ge

90

1.2

100 20

15

·10

3

MO pnp,AJ,ge

90

1.2

100 30

15

*10

3

MO pnp,AJ,ge

90

1.2

100 40

15

*10

3

MO pnp,AJ,ge

90

1.2

100 40

lS

*10

3

MO pnp,AJ,ge

90

MO pnp,AJ,ge

90

1.2 1.2

100 100

5so0

lS lS

*10 *10

3 3

MO pnp,AJ,ge

90

1.2

100 20

15

*30

3

MO pnp,AJ ,ge

90

1.2

100 20

15

*30

3

MO pnp,AJ,ge

90

1.2

100 30

lS

*30

3

MO pnp,AJ,ge

90

1.2

100 30

15

*30

3

MO

pnp,AJ,ge

90

1.2

100 40

lS

*30

3

MO pnp,AJ,ge

90

MO pnp,AJ,ge

90

MO pnp,AJ,ge

90

1.2
1.2 1.2

100
100 100

s4o0 so

lS lS
lS

*30 *30 *30

3 3 3

MO pnp,AJ ,ge

90

1.2

100 20

lS

*SO

3

MO pnp,AJ,ge

90

1.2

100 20

lS

*SO

3

MO pnp,AJ,ge

90

1.2

100 30

lS

*SO

3

MO pnp,AJ ,ge

90

1.2

100 30

15

*50

3

MO pnp,AJ ,ge MO pnp,AJ,ge MO pnp,AJ ,ge

90

1.2

90

1.2

90 .

1.2

100 40

100 100

s4o0

15 15 15

·*sSoO
*SO

3 3 3

MO pnp,AJ ,ge

90

1.2

100 50

lS

*SO

3

ITT -
ITT ITT -
ITT -

90

-

90

-

90

-

90

-

100 15 100 lS 100 20
100 20

s s 5 s

20
50
2so0

2 2 2
2

ITT -

90

ITT -

90

ITT -

90

DE npn,TDP,si

90

SOL pnp,ge

94

-

100 40 100 40

s s

2so0

5 s

-o.s

100 75

5

20

lSO 300 1.0 *90

5
-

1.25

100 *60 lS

*30-120 3

SOL pnp,ge SOL pnp,ge SOL pnp,ge BE -
BE -

94

l.2S

100 ·so 15

*20-SO 3

94

l.2S

100 *40 lS

*30-120 3.0

94

l.2S

100 *60 lS

*20-SO 3.0

100

-

-

30

2S

*20

-

100

-

-

60

25

*20

-

10

3

KSC, BE

10

3

KSC, BE

10

3

KSC, BE

10

3

KSC, BE

10

3

KSC, BE

10

3

KSC, BE

10

3

KSC, BE

Ss..s5

3

DE, KSC, BE, ITT

3

KSC, BE

S.5

3

DE, KSC, BE, ITT

sS..s5

3

DE, KSC, BE, ITT

3

KSC, BE

S.5

3

KSC, BE, ITT

S.5

3

KSC, BE

S.5

3

KSC, BE, ITT

4

3

DE, KSC, BE, Tl, ITT

4

3

KSC, BE

4

3

DE, KSC, BE, Tl, ITT

4

3

KSC, BE

4

3

DE, KSC, BE, Tl, ITT

4

3

KSC, BE

4

3

DE, KSC, BE, Tl, ITT

4

3

KSC, BE

4

3

DE, KSC, BE, Tl, ITT

4

3

DE, KSC, BE, ITT

4

3

KSC, BE

4

3

DE, KSC, BE, ITT

4

3

KSC, BE

4

3

DE, KSC, BE, ITT

4

3

KSC, BE

4

3

DE, KSC, BE, ITT

4

3

KSC, BE

4

3

KSC, BE, ITT

10

3

KSC, BE, ITT

10

3

KSC, BE

10

3

KSC, BE, ITT

10

3

KSC, BE, ITT

10

3

KSC, BE

10

3

KSC, BE, ITT

10

3

KSC, BE

6

3

KSC, BE, Tl, ITT, DE

6

3

KSC, BE

6

3

KSC, BE, Tl, ITT, DE

6

3

KSC, BE

6

3

KSC, BE, Tl, ITT, DE

6

3

KSC, BE

6

3

KSC, BE, Tl, ITT, DE

6 s

3

KSC, BE

3

KSC, BE, ITT, DE

5

3

KSC, BE

5 s s

3

KSC, BE, ITT, DE

3

KSC, BE

3

KSC, BE, ITT I DE

s 5

3

KSC, BE

3

KSC, BE, ITT I DE

5

3

KSC, BE

5

3

1
s

3 3

1

3

5

3

1

3

3
-

3

KSC

3

600

-

300

-

500

-

300

-

-

3

-

3

(see pages 4·9 for explanation of company abbreviations.)

May 17, 1966

69

Power <continued>

Cross Index Type

Key

Ho.

2N2287 2N3597 2N3598 2N3599 2N4002 p 78 2N4003 151-<}4 151-05 151-06 151-07
151.()8 151-09 151·10 151-12 151-14 p 79 151-16 151-18 151-20 152-04 152-05
152.()6 152-07 152-{)8 152-09 152-10 p 80 152-12 152-14 152-16 152-18 152-20
40355 DTS -423 40363 2N3442 2N3445
p 81 2N3446 2N3447 2N3448 2N3487 2N3488
2N3489 2N3490 2N3491 2N3492 40251 p 82 40325 156·04 156-06 156-08 156-10
2Nl899 2Nl900 2Nl901 2Nl902 2Nl903 p 83 2Nl904 2N3076 2N3263 2N3265 DTS430
DTS431 2N2733 2N2734 2N2735 2N2736
p 84 2N2737 2N2738 2N 173 2Nl74 2N174A

Mfr.

Type

BE -

SOL npn,si

SOL npn,si

SOL npn,si

Tl

npn,EP,si

Tl

npn,EP,si

WH npn,AJ,si

WH 'npn,AJ,si

WH npn,AJ ,si

WH npn,AJ,si

WH

npn,AJ,si

WH

npn,AJ,si

WH

npn,AJ,si

WH

npn,AJ,si

WH

npn,AJ ,si

WH

npn,AJ ,si

WH

npn,AJ ,si

WH

npn,AJ ,si

WH

npn,AJ,si

WH npn,AJ,si

WH npn,AJ,si

WH npn,AJ,si

WH

npn,AJ,si

WH

npn,AJ,si

WH npn, "J,si

WH

npn,AJ ,si

WH

npn,AJ ,si

WH

npn,AJ,si

WH

npn,AJ ,si

WH

npn,AJ ,si

RCA npn, si DE npn,si RCA npn,si RCA npn, si MO npn,AE,si

MO npn,AE,si

MO npn,AE,si

MO npn,AE,si

MO npn,AE ,si

MO

npn,AE,si

MO

npn,AE,si

MO npn,AE,si

MO

npn,AE,si

MO

npn,AE,si

RCA npn, si

RCA npn,si

WH

npn,DJ,si

WH

npn,DJ,si

WH

npn,DJ,si

WH

npn,DJ,si

TRWS npn,PL,si TRWS npn,PL,si TRWS npn,PL,si TRWS npn,PL,si TRWS npn,PL,si

TRWS npn,PL,si TRWS npn,PL,si RCA npn, si RCA npn, si DE npn, TDP,si

DE npn,TDP,si SOL pnp,ge SOL pnp,ge SOL pnp,ge SOL pnp,ge

SOL pnp,ge SOL pnp,ge DE pnp,AJ ,ge DE pnp,AJ,ge DE pnp,AJ,ge

70

MAX. RATINGS

CHARACTERISTICS

1co

pc (W)

VCEO

T.
J

*VCBO

I c

hfe

W/ °C (oc) (V) (A) *hFE

*1cEO t ic EX
(mA)

fae
*fr (kHz)

Packoge Outline !TO-)

Remorks

100

-

100

1

100

1

100

1

100

1

-

80

25

200 *60 20

200 *80 20

200 *100 20

200 80

30

*20

-

-

3

*40-120 *40-120 *40-120

0.0001 0.0001 0.0001

30000 30000 30000

· · *

20-80

1

30,000 63

*%"hex, Tl *%"hex, Tl *%"hex, Tl

100

1

100

1.4

100

1.4

100

1.4

100

1.4

200 100 30

*20-80 1

150 *80 6.0 ·11

10

150 ·100 6.0 *11

10

150 *120 6.0 *11

10

150 *140 6.0 *11

10

*30,000 63

25

t

25

t

25

t

25

t

tMT-1
tMT-1 tMT-1 tMT·l

100

1.4

150 *160 6.0 *11

10

25

t

tMT-1

100

1.4

150 *180 6.0 *11

10

25

t

tMT-1

100

1.4

150 ·200 6.0 *11

10

100

1.4

150 *145 6.0 *11

10

25 25

-t

tMT-1

100

1.4

150 *165 6.0 *11

10

25

-

100

1.4

150 *185 6.0 *11

10

25

-

100

1.4

150 *205 6.0 *11

10

25

-

100

1.4

150 *225 6.0 *11

10

25

-

100

1.4

150 *80 6.0 *18

10

25

t

tMT-1

100

1.4

150 *100 6.0 *18

10

25

t

tMT-1

100

1.4

150 ·120 6.0 *18

10

100

1.4

150 *140 6.0 *18

10

100

1.4

150 *160 6.0 *18

10

100

1.4

150 *180 6.0 *18

10

100

1.4

150 *200 6.0 *18

10

100

1.4

150 *145 6.0 *18

10

100

1.4

150 *165 6.0 *18

10

100

1.4

150 *185 6.0 *18

10

100

1.4

150 . *205 6.0 *18

10

100

1.4

150 *225 6.0 *18

10

100 100 115

1000

175 6.6 *150 50

-

1.33 0.657

150 400 200 70

3. 5 15

30-90 ·20. 70

--

117

0.668 200 140 10

*20·70 5

117

0.66

200 BO

7.5 *20-60 0.1

25

t

25

t

25

t

25

t

25

t

25

-

25

-

25

-

25

-

25

-

.005(max 2.8

6000

3

*700

3

-

3

-

3

tMT-1 tMT-1 tMT-1 tMT-1 tMT-1
lcer=0.5 mA

117

0.66

200 60

7.5 *20-60 0.1

-

3

117

0.66

200 80

7.5 *40-120 0.1

-

3

117

0.66

200 60

7.5 *40-120 0.1

-

3

117

0.66

200 60

7.5 *20-60 0.025

-

61

117

0.66

200 80

7.5 *20-60

0.025

-

61

117

0.66

200 100 7.5 *15-45 0.025

-

61

117

0.66

200 60

7.5 *40-120 0.025

-

61

117

0.66

200 80

7.5 *40-120 0.025

-

61

117

0.66

200 100 7.5 *30-90 0.025

-

61

117

0.668 200 40

7

*15-60 5

-

3

117

0.668 200 35

15

*12-60 5

-

3

I

120

0. 68

200 40

8

*15

20

60

-

120

0.68

200 60

8

*15

20

60

-

120

0.68

200 BO

8

*15

20

60

-

120

0.68

200 100 B

*15

20

60

-

125

1.0

150 *140 10

5.0

10

125

1.0

150 *140 10

*>8

10

125

LO

150 *140 10

5

10

125

1.0

150 *140 10

5

10

125

LO

150 *140 10

*>8

10

2500

-

5000

-

2000

-

5000

-

5000

-

125

1

125

1.0

t 125 l
t 125 1

125

0.7

125

0.7

141

1.67

141

1.67

141

1.67

141

1.67

150 *140 10

5

10

150 *140 10

5

25

200 60

25

*25-75 4

200 60 150 400

25

*25·75

2. 5 ·45

-4

150 400 2.5
110 *80 65 110 *60 65 110 *40 65
110 *80 65

*35

-

*30-120 5.0

*30-120 5.0

*30-120 5.0

*30-120 5.0

2000

-

2000

-

-

-

-

63

*4000 3

*4000 3

350

-

350

-

350

-

350

-

tTc=75C,TI tTc- 75C, Tl

141

1.67

110 *60 65

*30-120 5.0

350

-

141

1.67

110 *40 65

*30-120 5.0

350

-

150

.5

100 45

15

""37-70 4

10

36

MO I RCA

150

.5

100 55

15

*25-50 4

10

36

MO, RCA

150

.5

100 40

15

*41}·80 B

10

36

MO

(see pages 4-9 for explanation of company abbreviations)

ELECTRONIC DESIGN

May 17, 1966

precision de voltage standards now available withaccuracies to 0.003% stability to 15 ppm from Cohu Electronics

1 COHU'S NEW MODEL326 DC VOLTAGE STANDARD: an exceptionally accurate and stable source with a wide range of voltages at extremely low output impedance. Output voltages from 0to±1222.2221 volts in 3 decade ranges, with steps as small as 1 µV, and an accuracy of 0.003%_of setting; stability within 15 ppm for 7 days, 25 ppm for 6 months; output current to 50 mA; output impedance less than (0.00025
+ 0.00005Eout) ohms at DC; noise and hum less than 20 µV rms.
$2490.00.
I MODEL 3038 DC VOLTAGE STANDARD: highly accurate, direct setting, stable output over a wide range of voltages. Specifications: output voltage accuracy to within 0.01 % of setting; output voltage from O to ± 1111.1110 volts in 3 decade ranges, steps as small as 1 µV; output current to 25 mA; stability within 25 ppm for 7 days, 50 ppm for 6 months; noise and hum less than 40 µV rms. $2000.00.
1 MODEL 313 PROGRAMABLE DC VOLTAGE STANDARD: from Oto ± 1111.1110 volts in any desired sequence. The instrument automatically responds to any program applied in the form of parallel entry, 1-2-4-4 BCD signals; output voltage accuracy is within 0.01 %; stability is within 25 ppm for 8 hours and 50 ppm for 30 days; noise and hum is less than 40 µV rms; output current up to 25 mA; maximum settling time of output approx. 1 second. $3995.00.
I MODEL 321 / 323 DC VOLTAGE STANDARDS: accurate, stable voltages, to 25 mA current in rackmount or cabinet configurations. Voltage range 0 to ± 1111.110 volts with steps as small as 10 µV; output voltage accuracy within 0.01 % of dial settings; stability is within 25 ppm for 8 hours and 50 ppm for 30 days; output noise and hum less than 40 µV rms; Model 321 (rackmount) or 323 (cabinet) versions available with or without nullmeter. $1600.00 to $1900.00.
1 MODEL 302 DC VOLTAGE STANDARD AND NULL VOLTMETER: range 1.000 to 502. llOV; short term stability, ± 25 ppm ± 25 µV; output current to 20 mA; accuracy within 0.01 % of setting ± 200 µV. $1495.00.
1 MODEL 325 DC VOLTAGE CALIBRATOR: a stable de voltage source with an accuracy within 0.02%. Output voltage is from 0 to ± 1111. llOV in steps as small as 10 µV; output current to 25 mA; lightweight; portable. $995.00.
Send for complete product information on these de voltage standards, or any of COHU's line of precision instruments. Representatives in all major cities.

ELEC:TRC>N IC:S, I NC: SAN DIEGO CALIFORNIA

Box 623, San Diego, Californ ia 92112 Phone 714-277-6700

ON READER-SERVICE CARD CIRCLE 21
71

Power rcontinued)

Cross

Index Type

Key

Ho.

Mfr.

Type

MAX. RATINGS

CHARACTERISTICS

1co

Pc (W)

T.
J

VCEO *VCBO

IC

hfe

W/ °C (oc) (V) (A) *hFE

*1cEO tic EX
(mA)

fae *fr
(kHz)

Pockoge Outline
(TO-)

Remarks

2N277

DE pnp,AJ,ge

150

.5

100 25

15

*35-70 8

10

2N278

DE pnp,AJ,ge

150

.5

100 30

15

*35-70 4

10

2N441

DE pnp,AJ,ge

150

.5

100 25

15

*20·40 8

10

2N442

DE pnp,AJ ,ge

150

.5

100 30

15

*20·40 4

10

2N443

DE pnp,AJ,ge

150

.5

100 45

15

*20-40 4

10

p 85

2N511 2N511A

Tl

pnp,ge

Tl

pnp,ge

150

'l

100 *40 25

*20

O.'i

-

150

2

100 *GU 25

*20

0.5

-

2N511B 2N512

Tl

pnp,ge

Tl

pnp,ge

150

2

100 *80 25

*20

0.5

-

150

2

100 *40 25

*2r

0.5

-

2N512A

Tl

pnp,ge

150

2

100 *60 25

·2~

0.5

-

36

MO, RCA

36

MO, RCA

36

MO, RCA

36

MO, RCA

36

MO , RCA

-
-
-
-

2N512B

Tl

pnp,ge

150

2

100 *80 25

*20

0.5

-

2N513

Tl

pnp,ge

150

2

100 *40 25

*20

0:5

-

2N513A

Tl

pnp,ge

150

2

100 *60 25

*20

0.5

-

2N513B

Tl

pnp,ge

150

2

100 *80 25

*20

0.5

-

2N514

Tl

pnp,ge

150

2.14

95 40

25

*40

0.2

-

p 86

2N514A

Tl

pnp,ge

150

2.14

95 50

25

*40

0.2

-

2N514B

Tl

pnp,ge

150

2.14

95 60

25

*40

0.2

-

2N1015C

WH npn, AJ, si

150

1. 43

150 150 7. 5 *10

10

25

2N 1099

OE pnp,AJ,ge

150

.5

100 55

15

*35 70 4

10

2N 1100

DE pnp,AJ ,ge

150

.5

100 65

15

*25-50 4

10

-

-

-

-

STC

36

MO, RCA

36

MO, RCA

2N1358

DE pnp, AJ, ge

150

0. 5

100 -80 -15 *40-80 ·4

100

36

RCA

2N1412

DE pnp, AJ, ge

150

0. 5

100 100 15 *25-50

4

10

36

RCA

2Nl412USN DE pnp,AJ,ge

150

.5

100 60

15

*25-50 4

10

36

MO

2Nl936

Tl

npn,si

150

2

175 60

20

*12

-

-

-

2N 1937

Tl

npn,si

150

2

175 80

20

*12

-

-

-

p 87

2N2015

RCA npn,si

150

.855

200 50

10 *15-50 .05

25

36

STC

2N2016

RCA npn,si

150

.8S5

200 65

10 *15-50 .05

25

36

STC

2N2226

WH npn,AJ,si

150

2

150 50

10

*100

10

10

t

tMT 1

2N2227

WH npn,AJ,si

150

2

150 100 10

*100

10

10

t

tMTl

2N2228

WH npn,AJ,si

150

2

150 150 10

*100

10

10

t

tMT 1

2N2229 2N2230 2N2231 2N2232 2N2233 p 88
2N2338 2N 3429 2N3430 i1N3431 2N 3432

WH npn,AJ,si

150

l:

150 200 10

*100

10

10

WH npn,AJ,si

150

2.0

150 50

10

*400

10

7

WH npn,AJ,si

150

2.0

150 100 10

*400

10

7

WH npn,AJ,si

150

2.0

150 150 10

*400

10

7

WH npn,AJ,si

150

2.0

150 200 10

*400

10

7

RCA npn, si

150

0. 855 200 40

7. 5 *15-60 0. 2

20

WH npn,AJ,si

150

1.33

175 *50 7.5 *10

10

30

WH npn,AJ ,si

150

1.33

175 *100 7.3 *10

10

30

WH npn,AJ,si

150

1.33

175 *150 7.5 *10

10

30

WH npn,AJ ,si

150

1.33

175 *200 7.5 *10

10

30

t

tMT 1

t

tMT 1

t

tMT 1

t

tMT 1

t

tMT 1

36 -
-

2N3433

WH npn,AJ,si

150

1.33

175 *250 7.5 *10

10

30

-

2N3434

WH npnAJ.si

150

1.33

175 *30 7.5 *10

1 0

30

-

2N3470

WH npn,AJ ,si

150

2

150 *"50 10

*100

10

10

-

2N3471

WH npn,AJ ,si

150

2

150 *100 10

*100

10

10

-

2N3472

WH npn,AJ ,si

150

2

150 *150 10

*100

10

10

-

p 89

2N3473

WH npn,AJ ,si

150

2

150 *200 10

*100

10

10

-

2N3474

WH npn,AJ,si

150

2

150 *50 10

*400

10

10

-

2N 3475

WH npn,AJ ,si

150

2

150 *100 10

*400

10

10

-

2N3476

WH npn,AJ,si

150

2

150 *150 10

*400

10

10

-

2N3477

WH npn,AJ ,si

150

2

150 *200 10

*400

10

10

-

2N3713
2N3714 2N3715 2N3716
2N3771 p 90
2N3772 2N3773 2N3789 2N3790
2N3791

MO npn,si MO npn,si MO npn,si MO npn,si RCA npn,si
RCA npn, si RCA npn, si MO pnp,si MO pnp,si MO pnp,si

150

.857

200 60

10

*25-90 tl

150

.857

200 80

10

*25-90 tl

150

.857

200 60

10

*50-150 tl

150

.857

200 80

10

*50-150 tl

150

0. 855 200 40

30

*15-60 2

150

0.855

LOO 60

30

*15-60 5

150

.855

200 140 30

*15 -60 2

150

.857

200 60

10

*25-90 tl

150

.857

200 80

10

*25-90 tl

150

.857

200 60

10

*50-150 tl

*4000

3

*4000

3

*4000

3

*4000

3

*700

3

*700

3

*500

3

*4000

3

*4000

3

*4000

3

2N3792 2N3846 2N3847 2N3848 2N3849
p 91 Tl3027
Tl3028 Tl3029
Tl3030 Tl3031

MO pnp,si

150

Tl

npn,TDM,si

150

Tl

npn,TDM,si

150

Tl

npn, TDM,si

150

Tl

npn,TDM,si

150

Tl

pnp,ge

150

Tl

pnp,ge

150

Tl

pnp,ge

150

Tl

pnp,ge

150

Tl

pnp,ge

150

.85 /

200 80

10

*50-150 tl

?

175 200 20

*15-60 2

2

175 300 20

*15-60 2

2

175 200 20

*15-60 2

2

175 300 20

*15-60 2

*4000

3

10,000 63

10,000 63

10,000 63

10,000 63

2 2 2 2 2

100 *45 7 100 *60 7
100 *80 7 100 *100 7 100 *120 7

lll*40

1

*40

i

*40

1

*40

1

-
-
-
-

3 3 3 3 3

---'

(see pages 4-9 for explanation of company abbreviations.)

72

ELECTRONIC DESIGN

Power <continued)

Cross

Index Type

Key

Ho.

2N3146 2N3147 2N2075 2N2075A 2N2076 p 92 2N2076A 2N2077 2N2077A LN2078 2N2078A
2N2079 2N2079A 2N2080 2N2080A 2N2081 p 93 2N2081A 2N2082 2N2082A 2N2152 2N2152A
2N2153 2N2153A 2N2154 2N2154A 2N2156 p 94 2N2156A 2N2157 2N2157A 2N2158 2N2158A
2N2357 2N2358 2N2359 2N2728 2N2730 p 95 2N2731 2N2732 2N3311 2N3312 2N3313
2N3314 2N3315 2N3316 2N4048 2N4049 p 96 2N4050 2N4051 2N4052 2N4053 MP500
MP500A MP501 MP501A MP502 MP502A p 97
MP504 MP504A MP505 MP505A MP506
MP506A 2N2580 2N2581 2N2582 2N2583 p 98 2N574 2N574A 2N575 2N575A 2N 1157

Mfr.

Type

Tl

pnp,ge

Tl

pnp,ge

MO pnp,AJ ,ge

MO pnp,AJ,ge

MO pnp,AJ,ge

MO pnp,AJ,ge MO pnp,AJ,ge MO pnp,AJ,ge MO pnp,AJ,ge MO pnp,AJ,ge

MO pnp,AJ,ge MO pnp,AJ,ge MO pnp,AJ,ge MO pnp,AJ,ge MO pnp,AJ,ge

MO pnp,AJ,ge MO pnp,AJ ,ge MO pnp,AJ ,ge MO pnp,AJ ,ge MO pnp,AJ ,ge

MO pnp,AJ,ge MO pnp,AJ ,ge MO pnp,AJ ,ge MO pnp, AJ,ge MO pnp,AJ,ge

MO pnp,AJ,ge MO pnp,AJ,ge MO pnp,AJ,ge MO pnp,AJ,ge MO pnp,AJ ,ge

BE BE BE MO pnp,AJ,ge SOL pnp, ge

SOL pnp,ge SOL pnp,ge MO pnp,AJ,ge MO pnp,AJ,ge MO pnp,AJ,ge

MO pnp,AJ,ge

MO pnp,AJ,ge

MO

pnp,AJ,ge7

MO pnp,ge

MO

pnp,ge

MO pnp,ge MO pnp,ge MO pnp,ge MO pnp,ge MO pnp,AJ,ge

MO pnp,AJ,ge MO pnp,AJ,ge
MO pnp,AJ ,ge
MO pnp,AJ,ge
MO pnp,AJ,ge

MO pnp,AJ,ge MO pnp,AJ ,ge MO pnp,AJ ,ge MO pnp,AJ,ge MO pnp,AJ;ge

MO pnp,AJ ,ge DE pnp, DD,si
DE npn, DD,si DE npn,DD,si DE npn, DD,si

SDL pnp,ge SOL pnp,ge SOL pnp,ge SOL pnp,ge SOL pnp,ge

May 17, 1966

MAX. RATINGS

CHARACTERISTICS

p
c (W)

W/°C

VCEO

T. J

*VCBO

I c

(oc) (V) (A)

hie *hFE

1co *1cEO
tic EX (mA)

fae
*fr (kHz)

Package
Outline !TO-)

Remarks

150

2

150

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

-

170

-

170

-

170

2

170

2. 0

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

170

2

178

.7

178

.7

178

.7

178

.7

187

2.5

187

2.5

187

2.5

187

2.5

187

2.5

1

100 *150 15

*30-90 10

-

3

100 180 15

3().90

10

-

3

110 65

15

*25-100 4

5

36

DE

110 65

15

*25-100 4

5

36

110 55

15

*25-100 4

5

36

DE

110 55

15

*25-100 4

110 45

15

*25-100 4

110 45

15

*25-100 4

110 25

15

*25-100 4

110 25

15

*25-100 4

110 65

15

*40-160 4

110 65

15

*40-160 4

110 55

15

*40-160 4

110 55

15

*40-160 4

110 45

15

*40-160 4

110 45

15

*40-160 4

llO 25

15

*40-160 4

llO 25

15

*40-160 4

110 30

30

*50-100 4

110 30

30

*50-100 4

5

36

5

36

DE

5

36

5

36

DE

5

36

5

36

DE

5

36

5

36

DE

5

36

5

36

DE

5

36

5

36

DE

5

36

2.7

36

2.7

36

llO 45

30

*50-100 4

110 45

30

*50-100 4

llO 60

30

*50-100 4

llO 60

30

*50-100 4

110 30

30

*80-160 4

2.7

36

2.7

36

2.7

36

2.7

36

2.7

36

llO 30

30

*80-160 4

llO 45

30

*80-160 4

llO 45

30

*80-160 4

llO 60

30

*80-160 4

110 60

30

*80-160 4

2.7

36

2.7

36

2.7

36

2.7

36

2.7

36

-

30

50

*15

-

-

41

-

60

50

*15

-

-

41

-

80

50

*50

-

-

41

llO 5

50

*40-130 -

4.5

36

llO *80 65

*30-120 5. 0

350

36

llO *60 65

*30-120 5

350

36

llO *40 65

*30·120 5

350

36

110 20

5

60-120 0.3

1.0

36

llO 30

5

6().120 0.3

1.0

36

llO 40

5

60-120 0.3

1.0

36

llO 20

5

100-200 0.3

1.0

36

llO 30

5

100-200 0.3

1.0

36

llO 40

5

1()().200 0.3

1.0

36

110 30

60

*60-120 4

2

.36

llO 45

60

*6().120 4

2.

36

110 60

60

*60-120 4

110 30

60

*80-180 4

llO 45

60

*80-180 4

110 60

60

*8().180 4

llO 30

60

*30-60 4

110 30

60

*3().60 4

110 45

60

*30-60 4

llO 45

60

*30-60 4

110 60

60

*3().60 4

110 60

60

*30-60 3

2

36

2

36

2

36

2

36

3.6

36

3.6

36

3.6

36

3.6

36

3.6

36

3.6

36

llO 30

60

*50·100 4

110 30

60

*50-100 4

110 45

60

*5().100 4

110 45

60

*50-100 4

110 45

60

*50-100 4

3.6

36

3.6

36

3.6

36

3.6

36

3.6

36

110 45 150 400 150 400 150 500 150 500
100 *60 100 *80 100 *60 100 *80 100 *60

60

*50·100 4

10

10-40

-

*@lOA *10

-

*@SA *10·40 -

10

10

-

10

*9-22

7

10

*9·22

20.

25

*19·42 7

25

*19·42 20.

40

*38-84 7

3.6

36

50

36

50

36

50

36

50

36

100

-

100

-

150

-

150

-

200

-

(see pages 4-9 for explanation of company abbreviations.)

73

Power <continued)

Cross

Index Type

Key

Ho .

2Nll57A 2N2739 2N274 0 2N2741 2N2742 p 99 2N27 45 2N27 46 2N27 47 2N2748 2N2751
2N2752 2N2 753 2N2754 2N2757 2N2758 p 100 2N2 759 2N2 760 2N2761 2N27 63 2N2 76 4
2N2765 2N2766 2N27 69 2N277 0 2N2771 p 101 2N2772 2N2 815 2N2816 2N2817 2N2818
2N2819 2N2820 2N2821 2N2822 2N2823 p 102 2N2824 2N2825 153- 04 153-06 153-08
153-10 153-12 153-14 153-16 153-18 p 103 153-20 154-04 154-06 154-08 154-10
154-12 154-14 154-16 154-18 154-20 p 104 163-06 163-08 163-10 163·12 163-14
163-18 163-20 164-04 164-06 164-08 p 105 164-10 164- 12 164-14 164-16 164-1 8

Mfr.
SOL WH WH WH WH
WH WH WH WH WH
WH WH WH WH WH
WH WH WH WH WH
WH WH WH WH WH
WH STC STC STC STC
STC STC STC STC STC
STC STC WH WH WH
WH WH WH WH WH
WH WH WH WH WH
WH WH WH WH WH
WH WH WH WH WH
WH WH WH WH WH
WH WH WH WH WH

Type
pnp,ge npn,AJ,si npn,AJ,si npn,AJ,si npn,AJ,si
npn ,AJ,si npn,AJ,si np'n,AJ,si npn,AJ,si npn ,AJ ,si
npn,AJ,si npn,AJ,si npn,AJ,si npn,AJ,si npn,AJ ,si
npn,AJ,si npn,AJ,si npn,AJ ,si npn,AJ ,si npn ,AJ ,si
npn,AJ ,si npn,AJ,si npn,AJ,si npn, AJ ,si npn,AJ,si
npn,AJ ,si npn npn npn npn
npn npn npn npn npn
npn npn npn, AJ, si npn , AJ , si npn , AJ , si
npn, AJ, si npn, AJ , si npn, AJ, si npn, AJ , si npn, AJ , si
npn , AJ, si hpn,AJ,si npn, AJ , si npn , AJ, si npn , AJ, si
npn , AJ , si npn , AJ, si npn , AJ, si npn, AJ , si npn , AJ ,si
pnp, AJ , si npn,AJ,si npn,AJ,si npn,AJ,si npn,AJ,si
npn,AJ,si npn,AJ,si npn,AJ ,si npn,AJ,si npn,AJ,si
npn,AJ,si npn, AJ , si npn, AJ , si npn , AJ , si npn, AJ , si

74

MAX. RATINGS

CHARACTERISTICS

1co

p c (W)

T.
J

VCEO *VCBO

I c

hie

W/ °C (oq (V) (A) *hFE

*1cEo
tic EX (mA)

fae *IT
(kHz)

Package Outline
(TO-)

Remarks

187

2.5

100 *80 40

*38-84

20.

200

2

175 50

20

*10

15

200

2

175 100 20

*10

15

200

2

175 150 20

*10

15

200

2

175 200 20

*10

15

200

-

14

t

tMT 1

14 14

-t

tMT 1

14

-

200

2

200

2

200

2

200

2

200

2

200

2

200

2

200

2

200

2

200

2

175 50

20

*10

15

175 100 20

*10

15

175 150 20

*10

15

175 200 20

*10

15

175 50

20

*10

15

175 100 20

*10

15

175 150 20

*10

15

175 200 20

*10

15

175 50

30

*10

15

175 100 30

*10

15

14.5

t

tMT 1

14.5

t

tMT 1

14.5

t

tMT 1

14.5

t

tMT 1

16

t

tMT 1

16

t

tMTl

16

t

tMT 1

16

t

tMT 1

14

t

t MT 33

14

t

tMT 33

200

2

200

2

200

2

200

2

200

2

175 150 30

*10

15

175 200 30

*10

15

175 250 30

*10

15

175 50

30

*10

15

175 100 30

*10

15

14

t

tMT 33

14

t

t MT 33

14

t

tMT 33

14.5

t

t MT 33

14.5

t

tMT 33

200

2

200

2

200

2

200

1

200

2

175 150 30

*1 0

15

175 200 30

*10

15

175 50

30

*10

15

175 100 30

10

15

175 150 30

*10

15

14.5

t

t MT 33

14.5

t

t MT 33

16

t

t MT 33

16

-

16

t

tMT 33

200

2

175 200 30

*10

15

16

t

t MT 33

200

1

200 80

20

*10-50

-

-

*

*~·Hex, Tl

200

1

1.0 100 20

*10-50 -

-

*

*"%" Hex, Tl

200

l

200

1

200 150 20 200 200 20

*20-60 -
*10-50 -

-
-

* *

*1·*'t.' Hex Tl Hex,' Tl

200

1

200 80

25

*10-50

-

-

*

*~·Hex, Tl

200

1

200 100 25

*10-50 -

-

*

*~·Hex, Tl

200

1

200 150 25

*10-50 -

-

*

·~·Hex, Tl

200

1

200 200 25

*10-50 -

-

*

*'~·Hex, Tl

200

1

200 80

30

*10-40 -

-

*

*~·Hex, Tl

200

1

200 100 30

*10-40 -

-

*

*'~ ·Hex, Tl

200

1

200 150 30

*10-40

-

-

*

·~·Hex, Tl

200

1.33

175 65

7. 5 *15

10

33

-

200

1.33

175 85

7. 5 *15

10

33

-

200

1.33

175 105 7. 5 *15

10

33

-

200

1.33

175 125 7. 5 *15

10

33

-

200

1.33

175 145 7. 5 *15

10

33

-

200

1.33

175 165 7. 5 *15

10

33

-

200

1.33

175 185 7. 5 *15

10

33

-

200

1.33

175 205 7. 5 *15

10

33

-

200

1.33

175 225 7. 5 *15

10

33

-

200

1.33

175 *65 7.5 *25

10

33

-

200

1.33

175 85

7. 5 *25

10

33

-

200

1.33

175 105 7. 5 *25

10

33

-

200

1.33

175 125 7. 5 *25

10

33

-

200

1.33

175 145 7. 5 *25

10

200

1.33

175 165 7. 5 *25

10

33 33

-
-

200

1.33

175 185 7. 5 *25

10

33

-

200

1.33

175 205 7. 5 *25

10

33

-

200

1.33

175 225 7. 5 *25

10

33

-

200

2. 0

175 75

20

*15

15

22

200

2

175 95

20

*15

15

22

200

2

175 115 20

*15

15

22

200

2

175 135 20

*15

15

22

200

2

175 155 20

*15

15

22

t

tMT33

t

tMT 33

t

tMT 33

t

t MT 33

t

tMT 33

200

2

175 175 20

*15

15

22

200

2

175 215 20

*15

15

22

200

2

175 55

20

*25

15

22

200

2

175 75

20

*2 5

15

22

200

2

175 95

20

*25

15

22

t

t MT 33

t

tMT 33

t

tMT 33

t

t MT 33

t

tMT 33

200

2

175 115 20

*25

15

22

200

2. 0

175 135 20

*25

15

22

200

2. 0

175 155 20

*25

15

22

200

2. 0

175 175 20

*25

15

22

200

2. 0

175 195 20

*25

15

22

t

tMT 33

t

tMT 33

t

tMT 33

t

tMT 33

t

tMT 33

(see pages 4-9 for explanation of company abbreviations.)

ELECTRONIC DESIGN

I INSPIRATIONAL THOUGHTS FOR THE TECHNICALLY INCLINED I

[_ _IT_TS--.--Y_BIT_S_ ]
I Why the baby talk? We're bubbling with happiness over our latest baby. It's the fifth generation of a nativeborn family, and although the smallest, it is undoubtedly the best today by virtue of its breeding. This latest offspring is the new Size 11 Shaft Encoder we have named ADAC. Now ADAC, like its ancestors, is characterized by engraved drums which are interconnected by high-speed, antibacklash, continuous gearing and by special brushes which interrogate and read out the drum position on the run or at rest.
At this point we can almost hear you say, "So what's new about that?" It's an ai'l-around better baby! First of al I, the ADAC is a high-speed device designed to run at 200 rpm input shaft speed. It can be interrogated on a bit-by-bit basis in 1 millisecond while on the run. Even more important, it packs a lot of bits into a tiny )ackage - for exam p Ie, in a can only ) \l62" in diameter and 2.355" long, you can buy a count of 16,384 bits (2 14). We have also included all the advantages of V scan (U scan optional) for unambiguous binary outputs and
May 17, 1966

have incorporated all necessary

diode logic as well.

ADAC units are available as

binary encoders covering the range

of

28

through

2 14 ·

We

also

have

BCD

encoders in decimal counts to

99999 and angular counts to 359.9°.

A 2 10 gray code device is also

available.

To give you a better idea of the

new encoder's breeding, we think

these statistics will prove helpful.

TYPE SIZE 11 UNITS

CHARACTERISTIC Voltage/ Current Interrogat i on
Readout Output
Time Shar ing
C'luntsperrevolution Starting Torque Accuracy Life

BINARY

BCD

28vdc/ 20ma

28vdc/ 20ma

Pulsed or continuous

Ser ial

On run and static

Parallel

Parallel digit, serial between digits

Isolation diodes are standard to permit time sharing

126 or 256

100

0.20 in . oz.

0.20 in. oz .

::!:: 1 bit for any given input shaft angle

5,000,000 revolutions at 300 rpm (min)

---,.--_--

. ,,. I

- .. .#!'!··""""'- """

~ ! I ' I 'l'I /, ', I

*

-
'-

.--,.-.

,..

.,~ ....

"

"'

~ ""

y

A

SUMMARY OF OTHER FEATURES
· Solid gold alloy drums and brushes · In-line brush geometry · Continuous precision gearing · Flush conducting and nonconducting drum surface · Steel shafts and precision bearings ·Standard Size 11 mounting · Isolation diodes for positive and negative logic included.
The proud parents are anxious to send you a brand new brochure celebrating the event, so let us know who you are and where we can find you.
ON READER-SERVICE CARD CIRCLE 22

(_ _INE---.--RT_IA_]

I Sometimes it takes a sharp push to get things going. We say we're working against inertia. At other times we pull and haul to get things "off the dime" overcoming a kind of viscous unwillingness. But inertia and viscosity can be real advantages instead of irritants. There are times, for example, when a tach generator (we make them, too) can be replaced by a viscous or inertial damped servo motor. There's been a lot written on the subject, and we're not going to discuss the obvious advantages of these devices except for the following summary and an invitation to write for more details.

TYPICAL DAMPED SERVOMOTOR CHARACTERISTICS

TYPE-Vl$COUS

SIZE Part Number Stall Torque No·Load Speed Rotor Moment of Inertia Theoretical Accel at Stall Time Constant Fly Wheel Damping Fly Wheel Inertia Weight

CMO 0180 450 0.26 in. oz . 5190 rpm 0.69 gm cm2 28,600 rad / sec 2 0.0531 sec
2.0 oz.

CMO 1302 450 0.31 6200 0.48 48 ,500 0.0119 196 dyne·cm ·sec 4.6 gm cm2 2 .6

TYPE-INERTIAL

SIZE Part Number Stall Torque No·Load Speed Rotor Moment of Inertia Theoretical Acee I at Stall Time Constant Fly Wheel Damping Fly Wheel Inertia Weight

11 CRO 1300 660 0.60 6000 1.45 30 ,700 0.022 100 10 6.0

15 Tl310·41B 1.45 4500 5.48 18,700 0.0255 750 100 12.0

18 R l 3 2 0 · 2B 2.25 4500 6.25 26,000 0 .0185 750 100 18

KEARFOTT DIVISION

AEROSPACE GROUP L.ittle Falls, New Jersey
75

Power <continued)

Cross

Index Type

Key

Ho.

J64-20 2N2902 2N 1809 2N J8JO 2N l8JJ p 106
2N1 8J 2 2N J8J3 2N 1814 2NJ8J6 2N 1817

p 107

2N 1818 2Nl8J9 2N J823 2N 1824 2N 1825
2N 1826 2N 1830 2NJ83J 2N J8 32 2N 1833

p 108

2N21 09 2N2l 10 2N2 1JJ 2N21 J2 2N2113
2N2Jl4 2N2Jl6 2N2117 2N2JJ8 2N 2119

p 109

2N2123 2N2124 2N2125 2N2126 2N213 0
2N2J31 2N2J32 2N2133 2N3149 2N3150

p 110

'2N3151 DTG-1010 DTG1200 DTG-2000 DTG-2100
DTG-2200 DTG-2300 DTG·2400 OTS· 413 2N4079

p 111

2N4107 2N4136

Mfr.
WH Tl WH WH WH
WH WH WH WH WH
WH WH WH WH WH
WH WH WH WH WH
WH WH WH WH WH
WH WH WH WH WH
WH WH WH WH WH
WH WH WH STC STC
STC DE DE DE DE
DE DE DE DE AMP
AMP AMP

MAX. RA TINGS

CHARACTERISTICS

lco

Type

Pc (W)

W/ °C

VCEO

T. )

*VCBO

I c

(oc) (V) (A)

hie *hFE

*lcEO
t ic EX (mA)

fae *fr
(kHz)

Package Outline (TO-)

Remarks

npn, AJ , si

200

2. 0

175 215 20

*25

npn,si

240

1.37

200 120 0.5

30

npn,AJ,si

250

2. 22

175 50

30

*10

npn, AJ, si

250

2. 22

175 100 30

*10

npn , AJ, si

250

2. 22

175 150 30

*10

15

22

0.005

-

15

14

15

14

15

14

-t

tMT 33

t

tMT 14

t

tMT 14

t

tMT 14

npn, AJ, si

250

2. 22

175 200 30

*10

15

npn.AJ,si

250

2. 22

175 250 30

*JO

15

npn, AJ , si

250

2. 22

175 300 30

*JO

15

npn, AJ, si

250

2. 22

J75 50

30

*JO

15

npn, AJ , si

250

2. 22

175 100 30

*JO

15

14

t

tMT 14

14

t

tMT 14

14

t

tMT 14

J4.5

t

tMT 14

14. 5

t

tMT 14

npn, AJ , si

250

2. 22

175 150 30

*JO

15

npn, AJ , si

250

2. 22

175 200 30

*JO

J5

npn , AJ, si

250

2. 22

175 50

30

*10

15

npn, AJsi

250

2. 22

175 100 30

*10

15

npn, AJ , si

250

2. 22

175 150 30

*JO

15

14. 5

t

tM T 14

14. 5

t

tMT 14

16

t

tMT 14

16

t

tMT 14

16

t

tMT 14

npn, AJ , si

250

2. 22

175 200 30

*JO

15

16

npn, AJ, si

250

2. 22

175 50

30

*10

15

14

npn, AJ , si

250

2. 22

175 100 30

*JO

15

14

npn, AJ , si

250

2. 22

175 150 30

*10

15

14

npn, AJ , si

250

2. 22

175 200 30

*10

15

14

t

tMT 14

t

tM T 14

t

tMT 14

t

tMT 14

t

t MT 14

npn, AJ , si

250

2. 22

175 50

30

!!<JO

15

14

npn, AJ , si

250

2. 22

175 100 30

*10

15

14

npn, AJ , si

250

2. 22

175 150 30

*10

15

14

npn, AJ , si

250

2. 22

175 200 30

*10

15

14

npn, AJ , si

250

2. 22

175 250 30

*10

J5

14

t

tMT 17

t

tMT 17

t

tMT 17

t

tMT 17

t

tMT 17

npn, AJ, si

250

2. 22

175 300 30

* JO

J5

npn, AJ , si

250

2. 22

175 50

30

*JO

J5

npn, AJ , si

250

2. 22

175 100 30

*10

15

npn, AJ , si

250

2. 22

175 150 30

*JO

15

npn, AJ, si

250

2. 22

175 200 30

*JO

15

14

t

t MT 17

14. 5

t

tMT 17

14. 5

t

tMT 17

14. 5

t

tMT 17

14. 5

t

tMT 17

npn, AJ, si

250

2. 22

175 50

30

*JO

15

16

npn, AJ, si

250

2. 22

175 100 30

*JO

15

16

npn, AJ, si

250

2. 22

175 100 30

*JO

15

J6

npn, AJ, si

250

2. 22

175 150 30

*JO

15

16

npn, AJ, si

250

2. 22

175 50

30

*JO

15

14

t

t MT 17

t

tMT J7

t

tMT 17

t

tMT 17

t

tMT 17

npn,AJ,si

250

2.22

175 JOO 30

*10

15

14

t

tMT 17

npn,AJ,si

250

2.22

175 150 30

*JO

15

14

t

tMT 17

npn, AJ ,si

250

2.22

175 200 30

*10

15

npn

300

2

200 80

70

·JO

-

14 -

}

tMT 17

*1 1 /,."

Hex

npn

300

2

200 100 70

*10

-

-

*

*!'/.,'' Hex

-
pnp, ge pnp,ge pnp,ge pnp,ge

300

2

200 150 70

*10

-

-

0.8

110 *325 15

*12

-

-

1.25

110 *120 15

0.2

-

--

1.25

110 60

25

*25

JO

1.25

110 *80 25

*25

10

pnp,ge pnp,ge
pnp,g~
npn,s1

-

1.25

lJO 100 25

*25

10

-

1.25

110 *120 25

*25

10

-

1.25

110 *140 25

"'25

10

-

0.8

150 400 2. 0 20-80

-

2N4077 & 2N4078 combined to form matched comp!ementaiY pair

-

*

*!'/,." Hex

250

3

250

-

250

3

250

3

250

3

250

3

250

3

5000

3

2N4105 & 2N4106 combined to form matched complementary pair

2N2430 & 2N2431 combined to form matched complementary pair

·-

-

(see pages 4-9 for explanation of company abbreviations.)

76

ELECTRONIC DESIGN

This 5 MHz counter/timer trom Monsanto is on1r.3Y2 inches hiUh. and weiuhs iust 16 pounds. Yet ii uives rou atime base range trom 1µ second to 100 seconds in decade steps, and resolution tor treuuencr measurement 01 0.01 Hz.

HOW COME? Integrated circuits. In 903 of the active circuits. That's how Monsanto builds big performance into a small package. Plus speed, accuracy, reliability, low power consumption, low heat generation and easy maintenance. Six of the 13 printed circuit boards are interchangeable. HOW MUCH? Just $1575. And that low selling price

goes with these "high-priced" specs: · Measures average frequency: 0-5 MHz · Measures average periods: 0.2 µ sec. to 1 sec. · Measures single periods: 1 µ sec. to 106 sec. · Measures frequency ratios: 10-6 to 106 · Measures time intervals: 1 µsec· to 106 sec.· Counts: random or uniformly spaced signals. Want to know more? Just clip the· coupon.

··e·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

······
MONSANTO ,

·······
ELECTRONICS

·········
DEPT. 800 NORTH

··················
LINDBERGH BLVD. · ST. LOUIS, MO.

·

· · · e

:

Details, please, on the Model 1010 5 MHz Counter/Timer D

:

·

Model 1000 20 MHz Counter/Timer D

·

·

·

· ·

Name/Title

· ·

·

Firm

·

· ·
e

®
Address

· ·
e

·
···

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

City/State/Zip
·······

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

·

· · · e

ON READER-SERVICE CARD CIRCLE 23

May 17, 1966

77

Low-Level Switching
Generally types rated under one watt. In order of fae or f.r.

Cross Index Key LL 1 LL 2
LL 3
LL 4
LL 5
LL 6
LL7

Type Ho.
2N327A 2N328A 2N3288 2N329 2N329A
2N3298 2N 1034 2N 1035 2N 1036 2N 1037
2N 1275 2N 1640 2Nl641 2N519 2N519A
2N943 2N946 2N944 2N945 2Nl091
2Nl6J4 2N3342 2N3344 2N3345 2N3346
2N3842 2N3977 2N3978 2N3979 2N 1642
2N594 2N3841 2N356 2N356A 2N426
2N520 2N528A ZN585 2N595 ZNlOJZ
2Nl051 2Nl694 2N2946
T-~04
2N404
2N404A 2N 1605 2N 1605A 2Nl808 2Nll69
2N 1170 ZN315 2N315A 2N315B 2N388
2N388A 2N427 2N596 2N858 2N 1090
2N2945 2N3677 2N357 ZN357A ZN859

Mir.

Type

RA pnp, si

RA pnp,si

Tl

pnp,PL,si

RA pnp,si

RA pnp,si

Tl pnp; PL,si RA pnp,si RA pnp,si RA pnp,si RA pnp,si

RA pnp,si CT pnp,SYM CT pnp,SYM GI pnp,AJ,ge GI pnp,AJ,ge

SSD AJ SSD AJ
SSD AJ SSD AJ RCA npn,AJ,ge

GE pnp, AJ, ge SSD pnp, AJ SSD pnp, AJ SSD pnp, AJ SSD pnp, AJ

SPR pnp,PE,si
SPR pnp,PE, si SPR pnp, PE, si SPR pnp, PE,si CT pnp,SYM

Tl npn,AJ,ge SPR pnp, PE,-si GI npn,AJ,ge GI npn,AJ,ge Tl pnp,AJ,ge

GI pnp,AJ,ge GI pnp,AJ,ge RCA npn,AJ,ge Tl npn,AJ,ge GI npn,AJ,ge

npn,DD,si GE npn, ge CT pnp,si NUC pnp,ge
pnp,AJ,ge

RCA pnp,AJ RCA pnp, AJ, ge RCA pnp, AJ, ge Tl npn,AJ ,ge RCA npn,AJ,ge

RCA npn,AJ,ge GI pnp,AJ,ge GI pnp,AJ,ge GI pnp,AJ,ge Tl pnp,AJ ,ge

Tl pnp,AJ,ge Tl pnp,AJ,ge Tl npn,AJ,ge *SPR pnp,SP,si
RCA npn,AJ,ge

CT pnp,si CT pnp,si GI npn,AJ,ge GI npn,AJ,ge *SPR pnp,SP,si

1ae
*fl
(MHz)
0. 05 0.05 0.05 0.05 0.05
0.05 0.05 0.05 0.05 0.05
0.05 *0.4 *.8 1 1
l 1 1 J 1
J J 1 J 1
*J 1 1 1 *1.2
*1.5 *1.5 3 3 3
3 3 3 *3 3
3 3 *3 3.5 4
4 4 4 4 4.5
4.5 5 5 5 5
5 5 *5 *5 5
*5 5 6 6 *6

MAX. RATINGS

CHARACTERISTICS

VCEO

'c p c
(mW)

Tj

*VCBO

(ocl mWl°C (V)

(mA)

380 160 2. 9 40

50

380 160 2.9 35

50

500 200 2.9 35

50

340 160 2.5 30

5

380 160 2.9 30

50

500 200 2.9 30

50

250 160 1.85 40

50

250 160 i.a; 35

50

250 160 1.85 30

50

250 160 1.85 35

50

250 160 1.85 80

50

250 160 1.9 20

50

250 160 1.9 10

50

100 85 1.67 *15 -

150 100 2.G *20 -

250 175 1.67 JS

50

250 175 1.67 80

50

250 J75 1.67 18

50

250 175 1.67 50

50

120 85 -

*25 400

240 85 4

J2

300

250 175 1.7 8

50

250 175 1.7 30

50

250 175 [7 50

50

250 175 1.7 50

50

300 200 1.7 120 JOO

400 200 2.3 JO

JOO

400 200 2.3 20

JOO

400 200 2.3 35

100

250 160 1.9 6

50

150 85 2.5 20

300

300 200 1.7 100 100
100 85 2.0 *20 -

150 100 2.0 *30 -

150 100 2.5 *30 400

100 85 1.67 *15 -
150 100 2.0 *20 -

120 71 -

*Z5 200

150 85 2.5 15

300

J50 100 · 2.0 *35 -

hfe
*hFE
*15 *30 *30 60 *60
*60 15 30 60 25
*15 *6 *10 15 J5
-
-
*40
*32 *30 *25 *J5 *25
J *40 *30 *20 15
50 1.5 *20-50 *20-50 *30-60
20 40 *20 75 *40

1co Coe *lceo *Cob
(µA) (pF)

0.1

*110

O.J

*JlO

.OOJ 110

0.1

*110

O.J

*110

.001 110

1

*110

1

*110

1

*JlO

1

*JlO

J

*110

.01

*50

.01

*50

2

*J4

2

*J4

.002 *14

.004 *J4

.003 *J4

.004 *J4

8

*25

25

-

0. 02 *JO

0. 002 *J2

0. 005 *J2

0. 005 *J2

.020 *9

O.OOJ *J4

0.00J *14

0.001 *14

.1

*50

5

17

.002 *9

5

*14

5

*14

25

*20

2

*14

2

*14

3

-

5

17

5

*20

Package Vce(sat) Outline
(V) (TO-)

0. 3

5

0.5

5

0.5

5

1.0

5

0.6

5

0.6

5

0.5

5

0.4

5

0.3

5

0.5

5

0.3

5

-

5

-

5

-

5

-

5

.003

J8

.005

J8

.004

JB

.005

J8

-

5

90

-

O. J

5

0. 0012 5

0. 003 5

0. OOJ5 5

-

18

O.JO

46

0.10

46

0.15

46

-

5

-

5

-

18

.20

5

.20

5

.32

5

-

5

-

5

0.1

9

-

5

.20

5

Remarks
SSD, CT,STC,ETC,SPR SSD, CT, STC I ETC, Tl, SPR SPR
SSD, CT, STC I ETC, SPR, Tl
SPR KSC, CT, ETC,SPR KSC, CT, ETC, SPR KSC, CT, ETC, SPR KSC, CT, ETC, SPR
CT, SPR
Tl Tl, IND
CT, Chopper Pairs, SPR CT, Chopper Pairs, SPR CT, Chopper Pairs, SPR CT, Chopper Pairs, SPR GI
SPR SPR SPR SPR
Chopper Chopper Chopper Chopper
Chopper Tl Tl
Tl
GI

500 150 4

40

100 30·100 .I

*7

3.0.

75 400

8z5oo

Z.3

20 *40

25 *50 100 *30

L5

6.

-

.0005 *l 0 -

120 80 -

*Z5 100 -

5

*20

0.2

150 85 -

24

lOC *24

2

-

.1

150 85 -

35

iOO 24

2

-

.1

150 JOO -

*25

100

*40

5

*20

0.15

200 100 -

*40

100 *40

10

*20

0.15

150 100 2.5 25

300 *125

5

*20

.15

J20 71 -

18

-

*20

JO

19

-

120 JOO

71 85

-
z

20 *2Ll

-zoo

*20 *15·30

8 2

J50 100 2 *25 200 *20·50 2

150 100 2 *30 200 *20-50 2

150 100 2 25

500 *60-180 10

19

-

*14

.15

*J4

.15

*14

.15

*20

-

J50 100 2

40

500 *60-180 10

*20

-

150 100 2.5 *30 400 *40-80 25

*20

.32

150 85 2.5 10

300 100

5

17

-

150 140 1.3 40

50

33

0.1

*5

0.07

120 85 -

*25

400 *30

8

*25

-

400 200 2.3 25

JOO *40

.0002 *JO

-

400 200 -

20

JOO -

.001 6

.OOJ

100 150

85 100

2 z

*20 *30

-
-

*20·50 5 *25·75 5

*14

.20

*14

.20

150 140 1.3 40

50

65

0.1

*5

0.06

5

NA

5

46

1

5

AMP, GI, Tl, RCA, NUC

5

NUC

5

Tl

5

5

5

5

AMP

5

Tl, IND

5

Tl, IND

5

5

5

5

5

18 *PH orig Reg, CT

5

GI

46

46

5

Tl

5

Tl

18 *PH orig Reg, CT

(see pages 4-9 for explanation of company abbreviations.)

78

ELECTRONIC DESIGN

Low-Level (continued)

Cross Index Key LLB
LL9
LL 10
LL 11
LL 12
LL 13
LL 14

Type
Ho.
2Nl319 2N2274 2N2275 2N2276 2N2277
2N3840 3Nl23 UD-1001 UD-1002 UD-1003
UD-2000 2N3317 2NB60 2N2185 2N2186

Mir.
RCA *SPR *SPR *SPR *SPR
SPR SPR SPR SPR SPR
SPR SPR *SPR
*SPR

Type
pnp,AJ,ge pnp,SP ,si pnp,SP,si pn p,SP ,si pnp,SP,si
pnp,PE,si pnp,PE,si npn, PE, si npn, PE,si pnp,PE,si
JXlp,PE,si pnp,SP,si pnp,SP,si pnp,SP,si pn p,SP,si

2N2187 2N 1000 2Nlll9 2NB61
2N227B 2N2279
2N3318 ZN414
2N521 2N521A 2N579 2N581 2N583
2N862 ZN2970 2N2971 2N358 2N358A
2N428 2N863 2N942 2N2165 2N2166
2N2944 2N2968 2N2969 2N2677 40346
TW-135 2N316 2N316A 2N3019 2N3020
2N3319 2N2162 2N2163 2N337 A 2N522
2N522A 2N580 2N 1276 2Nl277 2Nl278
2N1279 2Nl309A 2N2349 2N3677 2N864
2N941 2Nl676 2N 1677 2N2167 2N2280

pnp,SP ,si GI npn,AJ,ge *SPR pnp,SAT,si *SPR pnp,SR,si
*SPR pnp,SP,s1
t SPR pnp,SP ,si
SPR pnp,SP, si RCA pnp, AJ, ge
GI pnp,AJ,ge GI pnp,AJ,ge
pnp,AJ,ge RCA pnp,AJ,ge
pnp,AJ,ge
*SPR pnp,SP,si SPR pnp,SP,si SPR pnp,SP ,si GI npn,AJ,ge GI npn,AJ,ge
Tl npn,AJ,ge *SPR pnp,SP ,si SSD AJ SPR pnp,SP ,si SPR pnp,SP,si
CT pnp,si SPR pnp,SP ,si SPR pnp,SP ,si GE npn,DG,si RCA npn,si
SPR pnp, PE,si GI pnp,AJ,ge GI pnp,AJ,ge FA npn,DPE,si FA npn,DPE,si
SPR pnp,SP ,si SPR pnp,SP ,si SPR pnp,SP,si GE npn,DG,si GI pnp,AJ,ge
GI pnp,AJ,ge pnp,AJ,ge
GE npn,DG,si GE npn,DG,si GE npn,DG,si
GE npn,DG,si GI pnp,AJ,ge GE npn,DG,si CT EP,si *SPR pnp,SP,si
SSD AJ *SPR pnp,SAT,si *SPR pnp,SAT,si SPR pnp,SP,si *SPR pn p,SP,si

fae
*fr
(MHz)
6 *6 *6 *6 *6
*6 6 6 6 6
6 *6.4 *6.5 *6.5 *6.5
*6.5 7 *7.2 *7.5
*7.6 *7.6
*7.6 8
8 8 ·8 8 8
*8 *8 *8 9 9
10 *10 10 *10 *10
*10 *10 *10 *10 *10
10 12 12 12 12
*12 *14 *14 *15 15
15 15 *15 *15 *15
*15 15 *15 *15 *16
16 *16 *16 *16 *16

MAX. RATINGS

p c (mW)

Tj

VCEO *VCBO

(oc) mW/°C (V)

120 71 -

*20

150 140 1.3 25

150 140 1.3 25

150 140 1.3 *15

150 140 1.3 *15

400 200 2. 3 50 100 200 0.58 *30 200 200 1.1 30 200 200 1.1 30 200 200 1.1 50

400 200 -

50

150 140 1.3 30

150 140 1.3 25

150 140 1.3 30

150 140 1.3 30

150 140 1.3 30 150 100 2.0 *40 150 140 1.3 10 150 140 1.3 25

150 140 1.3 15 150 140 . 1.3 15

150 140 1.3 15

150 85 -

*30

100 85 1.67 *15

150 100 2.0 *20

120 71 -

*20

150 85 -

*18

120 85 -

*18

150 140 1.3 15 150 140 1.3 *30 150 140 1.3 *30 100 85 2.0 *20
150 100 2.0 *30

150 100 2.5 *30 150 140 1.3 15 250 175 1.67 8 150 140 1.3 30 150 140 1.3 15

400 200 2.3 *15 150 140 1.3 *30 150 140 1.3 *30 250 175 1.66 *45
5W 200 28.5 -

400 200 2.4 30 100 85 2.0 *20 150 100 2.0 *25 800 200 28.6 *140 800 200 28.6 *140

150 140 1.3 *10 150 140 1.3 30 150 140 1.3 15 500 175 3.33 *45 100 85 1.67 *15

150 100 2.0 *20

120 71 -

*20

150 150 1.2 *40

150 150 1.2 *40

150 150 1.2 *40

150 150 1.2 *40 150 85 2.5 *35 150 150 1.25 *40 400 200 2.3 *30
150 140 1.3 6

250 175 1.67 8 100 140 0.87 4.5 100 140 0.87 4.5 150 140 1.3 *12 150 140 1.3 *10

CHARACTERISTiCS

'c (mA)

hie *hFE

400 *30

50

*15

50

*15

50

*15

50

*15

100 20 20 20

---1. 5

20 -

100 *50

50 -

50

33

50

-

50

-

1co *1cEo
(µA)
2.5 0.003 0.003 0.003 0.003
. 0005 0. 01 0.010 0. 010 0. 010
0.001 .001 0.1 0.001 0.001

Coe *Cob (pF)
*20 *6.0 *6.0 *6.0 *6.0
*9 *10 *8 *8 *8
*6 *9 *5 *6.0 *6.0

Package
Vce(sat) Outline (V) (TO-)

0.2

5

-

18

-

18

-

18

-

18

-

46

-

72

-

90

-

-

-

-

-0.1

-
18

0.07

18

-

18

-

18

Remarks
Tl Chopper, *PH orig Reg, CT M. Pair 2N2274*PH orig Reg, CT Chopper, *PH Orig Reg, CT M. Pair 2N2276 *PH orig Reg, CT
Chopper Dual Twin Dual Twin Dual, 8 lead flat pack Twin Dual, 8 lead flat pack
Twin Dual, 6 lead flat pack Chopper *PH orig Reg, CT Chopper; CT, SPR M. Pair 2N2185; *PH orig Reg, CT

50 -

-

*40

50

*25

50

65

0.001 *6.0 -

15

*20

.25

0.001 *6.0 0.08

0.1

*5

0.06

18 M. Pair 2N2185; CT. SPR 5 5 *PH ong Reg, CT
18 *PH orig Reg, CT

50

-

50

-

50 -
200 80

0.001 *6.0 0.001 *6.0 -

.001

*9

-

2

*11

-

18 Chopper *PH orig Reg, CT

18 MPair 2N2278 t PH Orig Reg,

CT

18 Chopper

5

LAN

-

35

-

70

400 *30

100 30

100 *30

2

*14

-

5

Tl

2

*14

-

5

Tl, IND

5

-

0.2

9

GI, IND

3

-

0.2

5

GI, Tl, LAN, IND

3

-

0.2

1

GI, LAN

50

33

0.1

*5

0.07

18 *PH orig Reg, CT

50

*10

0.01 *6.0 0.08

5

Symmetrical

50

*10

0.01 *6

0.08

18 Symmetrical

-

*20-50 5

*14

.20

5

Tl

-

*25·75 5

*14

.20

5

Tl

400 *60

50

65

50

*25

50

-

50

-

25

*20

.32

0.1

*5

0.06

.0025 *14

.004

0.020 *6

-

0.020 *6

-

5

18 *PH orig Reg

18 CT, Chopper Pairs, SPR

5

Chopper. CT

5

Chopper. CT

100 *80

.0001 *10

-

46

50

*15

0.01 *6

0.06

5

Symmetrical

50

*15

0.01 *6

0.06

18 Symmetrical

25

*20·55

.1

*3

1.5

46

0.5A *25 (min) *5

-

0.5

5

Ve ER= 175

100 *50

0.001 *9

0.15

18 Complementary to 2N2432

200 *20-50 2

*14

.18

5

IND

200 *20·50 2

*14

.18

5

IND

100 5

-

12

0.2

5

100 4

-

12

0.2

5

50 -

50

*10

-

50

35

0.001 *6

-

50

35

0.001 *6

-

20

*20·55

.5

*3

1.5

-

60

2

*14

-

18 Chopper

5

Chopper. CT

5

Chopper. CT

5 TR

5

Tl

-

100

2

400 *45

5

25

9-22

1

25

18·44

1

25

37-90

I

*14

-

-

0.2

*5

1

*5

1

*5.0

l

25

76·333

1

*5

I.

300 *80

6

20

0.2

25

*120-250 1

*4

1.5

100 -

0.001 *10

-

50

65

0.1

*5

0.06

5

Tl. IND

9

GI, IND

5

TR

5 TR

5

TR

--

5 TR

5

Tl

5

18 Low Rec (SAD Chopper

18 *PH orig Reg, CT

50

*25

50 -

50

50

50

-

50

-

.0025 *14

.002

18 CT, Chopper Pairs, SPR

0.001 *7

0.04

5

Chopper, *PH orig Reg

0.001 *7

0.-055

5

Chopper, *PH orig Reg

0.002 *6

-

5

Chopper , CT

0.003 *7

0.05

18 Chopper, *PH orig Reg, CT

(see pages 4-9 for explanation of company abbreviations.)

May 17, 1966

79

Low-Level (continued)

Cross Index Key LL 15
LL 16
LL 17
LL 18
LL19
LL20
LL 21

Type Ha.
2N2281 2N582 2N317 2N317A 2N 1384
2N23SO 2N2351 2N2352 2N2353 2N2678
UD-1000 2N523 2N523A 2N865 2N2164
2N338A 2N524A 2N842 2Nl060 2N525A
2N794 2N843 2N 1300 2Nl854 2Nl683
tN-79 TN-80 2N526A 2N795 2Nl301
Sl8200 2N398A 2N3107 2N3109 2N3340
2N3341 2N527A 2N796 2N 1131A 2Nll32A
2Nll32B 2Nl252 2N3108 2N3110 2Nll39
2N 1254 2N 1255 2Nl256 2N 1257 2Nl258
2N 1259 2Nl444 2N2102 2N2569 2N2570
2N3883 3N71 3N72 3N73 FT34C
FT34D MCS2135 MCS2136 MCS2137 MCS2138
2Nl204 2Nl204A 2N 1253 2N 1494 2N 1494A

Mfr.

Type

pnp, SP, si RCA pnp,AJ,ge GI pnp,AJ,ge GI pnp,AJ,ge RCA pnp,DR,ge

GE npn, PL,si GE npn, PL,si GE npn, PL, si GE npn, PL,si GE npn,DG,si

.SPR npn,PE,si GI pnp,AJ,ge GI pnp,AJ,ge *SPR pnp,SP,si SPR pnp,SP,si

GE npn,DG,si MO pnp,AJ,ge TR npn,PE,si
npn,DM,sl MO pnp,AJ ,ge

pnp,MS,ge TR npn, PE, si RCA pnp,MS,ge RCA pnp, DM, ge RCA pnp,MS,ge

SPR npn, PE, si SPR npn,PE,si MO pnp,AJ,ge
pnp,MS,ge
RCA pnp,MS,ge

FA npn,DPE,si MO prip,AJ,ge FA npn,DPE,si FA npn,DPE,si SSD npn,PL

SSD pnp, EP MO pnp,AJ,ge
pnp,MS,ge HU pnp HU pnp
11u pnp
FA npn,DD,si FA npn,DPE,si FA npn,DPE,si TR npn,PE,si

HU pnp HU pnp HU pnp HU pnp HU pnp

HU pnp npn, DM, si
RCA npn,si AMP npn,PE,si AMP npn,PE,si

MO pnp,EM,ge ~SD n,PL
SSD n,PL SSD n,PL FA npn,DPE,si

FA npn,DPE,si
MO npn,AE,si MO npn,AE,si MO pnp,AE,si MO pnp,AE,si

MO pnp, EP, ge MO pnp, EP, ge FA npn,DD,si MO POP., EP, ge MO pnp, EP, ge

MAX. RATINGS

CHARACTERISTICS

fae *fr (MHz.)

p c (mW)

Tj

VCEO

*VCBO

(acl mW/°C (V)

lc (mA)

hfe *hFE

1co Coe *1CEO *Cob
(µA) (pf)

Pockage Vce(sot) Outline
(V) (TO-)

Remarks

*16

150 140 1.3 *10 50

-

0. 003 *7

-

18

150 85 -

*25 100 60

2

-

0.2

70

100 85 2.0 *20 400 *20-60 2

·14

.20

20

150 100 2.0 *25 400 *20-60 2

*14

.20

*20 240 85 -

*30 500 *20

4

-

-

18 Matched 2N2280's, SPR, CT

5

GI, Tl, RCA, IND

5

Tl, IND

5

Tl, IND

11

20

400 200 2.3 40

1

*300

-

20

400 200 2.3 50

1

*120

-

20

400 200 2.3 40

1

*60

-

20

350 200 -

25

1

*20

-

*20 250 175 1.66 *45 25

45-150 .1

20

0. 35

46

20

0. 35

46

20

0. 35

46

20

0. 35

46

*3

1.5

46

20

200 200 1.1 20

20

-

21

100 85 1.67 *15 -

80

21

150 85 2.0 *15 -

125

*24 150 140 1.3 *10 50

150

*24 150 140 1.3 *12 50

40

0.010 *10

-

2

*14

-

2

*14

-

0.1

*5

0.05

0.002 *6

-

90 Twin Dual

5

5

IND

18 *PH orig Reg, CT

5

Chopper, CT

25

500 175 3.33 45

25

45-150 .5

3

1.5

5 TR

25-42 225 100 6.67 *45 500 18-41

10

*40

0.130 5

30

300 175 2

45

50

*20-55 1

10

1.2

18

30.0 350 150 2.0 40

50

20

0.1

*10

0.3

18 NA

34-65 225 100 6.67 *45 500 30-u4

10

*40

0.130 5

40

150 85 -

*13 100 *50

13

-

7'

18 SPR

40

300 175 2

45

50 *45-150 1

*10

1.2

18

*40 150 85 -

*13 100 30

3

-

-

5

SPR, Tl

40

150 85 -

*18 100 40-400 4. 2

-

0. 25

5

*50 150 85 -

12

100 *50

3

-

-

5

Tl, SPR

50

800 200 4.57 *30 800 *100

50

500 200 2.86 *30 800 *100

53·90 225 100 6.67 *45 500 44-88

60

150 85 -

*13 100 *75

*60

150 85 -

*13

100 30

0.010 *10

-

5

DC/AC Chopper

0. 010 *10

-

18 DC/AC Chopper

10

*40

U30 5

13

-

-

18 SPR

3

-

-

5

SPR, Tl

60

.4 200 11.4 60

500 300

65

150 100 2 105 200 *65

70

800 200 4.57 100 1000 60

70

800 200 4.57 80

1000 60

*70 400 200 2. 28 20

30 *60

-

20

.25

50

12

-

.11

5

GI, Tl, RCA

.01

20

10

5

.01

25

150

5

0. 001 *6

0. 2

46

*70 400 200 2. 28 20

30 *60

0. 01 *6

72-121 225 100 6.67 *45 500 60-120

10

*40

80

150 85 -

*13 100 *85

13

-

*80 750 175 -

*60 -

*30

-

-

*80 750 175 -

*60 -

*60

-

-

0. ?.5

46

0.130 5

-

18 SPR

-

5

-

5

MO

*80' 750 175 -

*70 -

*60

-

-

-

*80 2.0 175 13.3 *30 -

*35

0.1

*30

0.6

96

800 200 4.57 100 1000 40

.01

20

10

96

800 200 4.57 80

1000 40

.01

25

150

100 500 175 6.6 15

100 *20-200 5

12

.7

5

MO

5

SY, AL, NA

5

5

5

*100 275 175 -

30

-

30

-

8

-

*100 275 175 -

30

-

*60

-

8

-

*100 275 175 -

40

-

*30

-

8

-

*100 275 175 -

40

-

*60

-

8

-

*100 275 175 -

30

-

*100

-

8

-

*100 275 175 -

50

-

*50

-

8

-

100 500 150 4 *60 250 *25

0. 5

*32

I. 5

*100 SW 200 28.6 65

la

*40-120 .002 *75

0.5

100 300 175 2 *20 100 *50

.01

*10

0.2

100 300 175 2 *20 100 *50

.01

*10

0.2

5 5 5 5 5

5

5

NA

5

CDC, GI, TR, TRWS

18 Ch'opper - vottset=l4tl

18 Chopper - Voffset=350

*100 750 100 10 15

300 *30

t

*8

0.5

5

Ices =100

*100 100 200 .57 *15 10

*40

.010 *6

50

18 Dual-Emitter Chopper

*100 100 200 .57 *15 10

*40

.010 *6

100

18 Dual-Emitter Chopper

*100 100 200 .57 *15 10

*40

.010 *6

200

18 Dual-Emitter Chopper

100 800 200 .0286 *150 -

*120

-

-

1

5

100 800 200 .0286 120 -·

*300

-

-

1

5

*100 150 125 1.5 60

50

*100-300 .01

*3

*100 150 125 1. 5 60

50

*250-750 .01

*3

0.3 0.3

--

*100 150 125 1.5 60

50

*100-300 .02

*3

0.2

-

*100 150 125 1.5 60

50 *250-750 .02

*3

0.2

-

*110 750 100 10 15

500 *15

*110 750 100 10 15

500 *25

*110 2.0 175 13.3 *30 -

*45

*110 750 100 10 15

500 *15

*110 750 100 10 15

500 *25

7

*6. 5 0. 4

5

7

*6. 5 0. 4

5

0.1

*30

0.6

5

GI , AL, NA

7

*6. 5 0. 4

31

7

*6. 5 0. 4

31

(see pages 4-9 for explanation of company abbreviations.)

80

ELECTRONIC DESIGN

Low-Level (continued)

Cross Index Key
LL 22

Type
Ho.
2N2800 2N2801 40366 2Nl754 Sl8100
2N702 2N703 2Nl495 2N 1496 2N2330

Mir.

Type

MO pnp,AE,si
MO pnp,AE,si RCA npn,si *SPR MADT,ge
FA npn,DPE,si

Tl

npn,si

Tl npn,si

MO pnp, EP, ge

MO npn, EP, ge

MO npn,AE,si

MAX. RATINGS

1ae

VCEO

*IT (MHz)

p c
(mW)

T;

*VCBO

(oc) mW/° C (V)

lc (mA)

*120 3W 200 1.73 35

800

*120 3W 200 17.3 35

800

*120 SW 200 2 8.5 65

lA

*125 50 85 -

*13 100

130 .4 200 11.4 *60 500

*150 300 175 2

25

50

*150 300 175 2

25

50

*150 750 100 10 25

500

*150 750 100 10 25

500

*150 3W 175 20 20

-

CHARACTERISTICS

hie

1co Coe *1crn *Cob

*hFE

(µA) (pF)

*30-90 tO.l *25

*17 -225 tO.l *25

*40-120 2 nA *15

*75

.6

*1.5

150

-

10

*20

0.5

*3

*40

0.5

*3

*25

7

*6. 5

*25

7

*6. 5

50/ -

0. 001 *10

Package
Vce(sat) Outline (V) (TO-)

.4

5

.4

5

0.5

5

.12

9

.25

50

Remarks
tlcex tlcex High-Reliability type GI, *PH orig. Reg.

0.5

18 TRWS. GI, NA

0.5

18 TRWS, FA, SY, GI , NA

0. 3

5

0. 3

31

0. 001

5

SPR

2N2331 MO npn,AE,si

*150 LBW 175 12 20

-

50--

0001 *10

0.001

18 SPR

2N3554 Tl npn,EP ,si

*150 800 200 4.57 30

1200 *25-100 0.5

*25

0.7

5

2N 1499 PH pnp,ge

*160 60 100 -

*20 100 *70

.6

*1.5 .12

9

2Nl708 RCA npn,PE,si

*200 300 175 -

*25 200 *20

12

*6

0.22

46 FA,SY , GI

2N2205 RCA npn,PE,si

*200 300 175 -

*25 200 *20

0.025 *6

0.22

18 SY , RCA

LL 23

2N2206 RCA npn,PE,si

200 300 175 -

*25 -

*40

0.025 6

0.22

46 SY

2N3485 FA pnp,PE,si

200 360 200 11.4 40

600 40-120 .020 8

0.4

46

2N3485A FA pnp,PE,si

200 2000 200 11.4 40

600 40-120

.020 8

0.4

46

2N3486 FA pnp,PE,si

200 2000 200 11.4 40

600 100-300 .020 8

0.4

46

2N3486A FA pnp,PE,si

200 2000 200 11.4 40

600 100-300 .020 8

0.4

46

2N3644 FA npn,DPE,si 200 700 125 7.0 45

500 200

-

4.5

-

-

2M3645 FA pnp,DPE,si *200 700 125 7.0 60

500 *200

-

4.5

-

-

2N3905 MO pnp,AE,si

*200 310 135 2.81 4U

200 *50-150 t

*4.5 0.25

92

2N4125 MO pnp,AE,si

*200 310 135 2.81 30

200 *50-150 .OS

*4.5 0.4

92

40218

RCA npn,MS,si

*200 300 175 2

*25 50

*20-60 0.5 (max) 5 (max) 0.6 (max) 52

LL24

I

I

40222 FK3299

RCA npn,PE,si FA npn,DPE,si

*200 300 175 2 200 175 200 2

*25 30

200 20

- *20 (min) .025 (max) 6 (max) .22 (max) 52

40-120

.15

8

.22

Hermet package

MPS706 MO npn, EP,si UD-300J SPR npn, PE,si

- *200 500 125 5
200 350 200

*25 60

600

*20

0.5

*6

*100-300 0. 010 *8

0.6 0.4

92 85 npn Quad

UD-3006 SPR npn ,PE,si

200 350 200 -

60

600 *100-300 0.010 *8

0.4

85 pnp Quad

UD-3007 SPR npn,PE, si

- 200 350 200

60

600 *100-300 0. 010 *8

0.4

£N827

MO pnp,DM,ge

*250 150 100 2

*20 100 *100

5

9

0.25

2N2048 *SPR MADT,ge

*250 150 100 -

15

100 *125

1

*1.5

.13

2N2475 RCA npn,PE,si

250 600 200 -

*60 -

*20

0.2

*10

0.4

2N2476 RCA npn,PE ,si

250 600 200 -

*60 -

*40

0.2

*10

0.4

LL 25

2N3015 FA npn,EP,si

*250 800 200 4.57 30

-

*30-120 0.2

*8

0,4

2N3250 FA pnp,DPE,si 250 360 200 6.9 *50

200 150

-

.25

0.25

2N3641 FA npn, PE, si

*250 700 125 7. 0 30

-

*75

0. 05 *6. 0 0. 35

2N3642 FA npn , PE, si

*250 700 125 7. 0 45

-

*75

0. 5

*6. 0 0. 35

2N3643 FA npn , PE, si

*250 700 125 7. 0 30

-

*2 20

0. 5 *6. 0 0. 35

85 Complementary Quad

18 Tl

9

*PH orig. Reg.

5

5

SPR

5 Tl, SPR

18

-

CDC, IEC, GME

-

CDC, IEC, GME

-

CDC, IEC, GME

2N3903 MO 2N3906 MO 2N3946 MO 2N4123 MO 2N4126 MO
LL 26 FK3300 FA FK3502 FA
FK3503 FA
FV3503 FA MPS2713 MO

npn,AE,si pnp,AE,si npn,AE,si npn,AE,si pnp,AE,si
npn,DPE,si pnp,DPE ,si pnp,DPE,si pnp,DPE,si npn,AE,si

*250 310 135 2.81 40 *250 310 135 2.81 40 *250 1200 200 6.9 40 *250 310 135 2.81 30 *250 310 135 2.81 25

250 175 200 2

30

250 175 200 2

45

250 175 200 2

60

250 175 200 2

60

*250 310 135 2.81 18

200 *50-150 t 200 *100-300 t
200 *50-150 t 200 *50-150 .05 200 *120-360 .05

20

100-300 .15

500 300

10

500 300

10

500 300

10

200 *30-90 0.5

*4

0.2

*4.5 0.25

*4

0.2

*4

0.3

*4.5 0.4

8

.22

8

.25

8

.25

8

.25

*2.5 0.3

92 92 18 92 92

-

Hermet package

-

Hermet package

-

Hermet package

51

92

MPS2714 MO npn,AE,si

*250 310 135 2.81 18

200 *75-225 0.5

*2.5 0.3

NSlllO NA npn,PL,si

250 500 200 3

110 100 -

1

*6

-

NSllll NA npn,PL,si

250 500 200 3

60

100 -

.1

*6

-

NS1500 NA npn,PL,si

*250 500 200 25 20

100 *50·100 0.5

5

.1

NS1510 NA npn,PL,si

*250 500 200 2.5 20

100 *50· 100 0.5

3.8

.1

LL 27

2N784A SY npn,EO,si

300 360 200 -

*40 200 *25· 150 .025

3.5

.65

2N835

MO npn, EP, si

*300 lW 175 6. 67 *25

200 20

0. 01 *2.8 30

2N838

MO pnp,EM,ge

*300 150 100 2

*30 100 *30

10

4

0.18

2N914/ 4b SY npn,PL,EP,si 300 400 200 -

*40 -

*30-120 .025 *6

0.7

2N2381 MO pnp,EM,ge

*300 750 100 10 15

500 *40

1

*3.5 .25

92 18 Avalanche Transistor 18 Avalanche Transistor 18 18

18

18 ITT, SPR

18

46

GI

5

2N2382 MO pnp,EM,ge

*300 750 100 10 20

500 *40

1

*3.5 .25

5

2N2717 AMP pnp,AD,ge 300 275 75 0.50 *20 300 *50

-

-

2N3131 NA npn,si

*300 20(1 175 -

15

100 *30-120 .025 *4

0. 35

18

.25

-

2N3251 FA pnp,DPE,si 300 360 200 6.9 *50 200 300

-

.25

0.25

18

2N3605 GE npn,PEP,si 300 200 100 2.67 14

200 *65

0.5

*4.8 .25

98

LL 28

2N3606 GE npn,PEP,si 300 200 100 2.67 14

200 *65

0.5

*4.8 .25

98

2N3607 GE npn,PEP,si 300 200 100 2.67 14

200 *65

0.5

*4.8

.25

98

2N3904 MO npn,AE,si

*300 310 135 2.81 40

200 *100-300 t

*4

0.2

92

2N3947 MO npn,AE,si

*300 1200 200 6.9 40

200 *100-300 t

*4

0.2

18

2N4124 MO npn,AE,si

*300 310 135 2.81 25

200 *120-360 .05

*4

0.3

92

(see pages 4-9 for explanation of company abbreviations.)

May 17, 1966

81

Low-Level <continued)

Cross

Index Type

Key

Ho. Mfr.

Type

2N4264 2N4265 40219 40221
MM709 LL 29
2N2256 2N2257
2N2258 2N2259 2N834

MO npn,AE,si MO npn,AE,si RCA npn,PL,si RCA npn,PE,si MO npn,AE,si
MO npn,ME,si MO npn,ME,si MC pnp,ME,ge MO pnp,ME,ge MO npn,EM,si

LL30

2N3009 2N3647 2N3973 2N3974 2N3975
2N3976 40220 MPS834 MPS3646 2N706

FA npn, EP ,si FA npn,DPE,si GE npn,PEP,si GE npn,PEP,si GE npn,PEP,si
GE npn,GE,si RCA npn,PE,si MO npn,EP,si MO npn,AE,si FA npn,DD,si

2N706A Tl npn,si

LL 31

2N706B 2N707
2N708

MO npn,EP,si FA npn,DD,si
FA npn,DP,si

2N742 2N828
2N2537

NA npn,si MO pnp,EM,ge MO npn,AE,si

LL 32

2N2538 2N2539 2N2540 2N3011 2N3012
2N3493 2N3576 2N3722 2N3723 40217

MO npn,AE,si MO npn,AE,si MO npn,AE,si Tl npn, EP,si FA pnp,EP,si
MO npn, EA,si Tl pnp,EP,si FA npn,PE,si FA npn,PE,si RCA npn,MS,si

MPS2894 MO 2N3648 FA 2N4046 FA 2N4047 FA
2N960 MO

LL 33

2N961

MO

2N964 MO

2N965 MO

2N966

MO

MPS3639 MO

pnp,EP,si npn,DPE,si npn,PE,si npn,PE,si pnp,EM,ge
pnp,EM,ge pnp,EM,ge pnp,EM,ge pnp,EM,ge pnp,EP,si

MPS3640 MO pnp,EP,si

2Nll95

pnp,DM,ge

2N2368 FA npn,PE,si

2N3646 FA npn, PE, si

2N4121 FA pnp,OPE,si

LL 34 2N 1992

npn, O,si

2N2475 RCA npn,PE,si

2N3010 FA npn,EP,si

2N3640 FA pnp, PE, si

2N4122 FA pnp,DPE,si

2N2369 FA

2N2369A FA

2N27B7 GI

2N2788 GI

2N2789 GI

LL 35 2N2790 GI

2N2791 GI

2N2792 GI

2N709

FA

2N917

FA

npn,PE,si npn,PE,si npn,si npn,si npn,si
npn,si npn,si npn,si npn,PE,si npn,DP,si

fae *fT
(MHx)
*300 *300 "'300 *300 *300
*320 *320 *320 *320 350
*350 350 *350 *350 *350
*350 *350 *350 *350 *400
*400 *400
*400
*400 *400 *400
*400 *400 *400 *400 *400
*400 *400 400 400 *400
*400 450 450 450 *460
*460 *460 *460 *460 ·500
*500 *550 *550 550 550
*600 *600 *600 *600 600
*650 *675 *700 *700 *700
*700 *700 *700 *800 *800

p c (mW)
310 310 360 360 750
1000 1000 300 300 lW
360 400 360 360 360
360 300 500 500 1.0
300
300 1.0
1.2
500 300 3W
3W BW LBW 360 360
250 360 800 BOO 300
1000 400 .8 .8 300
300 300 300 300 500
500 250 1200 500 200
350 500 300 500 200
1200 1200 800 800 BOO
500 500 500 0.5 0.3

MAX. RATINGS

Tj

VCEO

*VCBO (ocl mW/°C (V)

'c
(mA)

135 2.Bl 15

200

135 2.Bl 12

200

200 2.06 "'40 -

200 2.06 *40 -

200 4.3 B

100

175. 6.67 7

100

175 6.67 7

100

100 4 7

100

100 4 7

100

175 6.67 *40 200

200 2.06 15

200

200 11.43 10

500

150 2.67 *60 400

150 2.67 *60 400

150 2.67 *60 400

150 2.67 *60 400

175 2 *40 200

125 5 30

200

125 5.0 15

200

175 6.7 *25 -

175 2 20

50

17.5 2 *25 500
175 6. 7 *56 -

200 6.9 15

-

200 -

25

100

100 4

15

200

200 17.2 30

-

200 17.2 30

-

200 10.3 30

-

200 10.3 30

-

200 2. 06 12

200

200 2.06 12

200

200 1.43 8

-

175 2.4 15

200

200 22.8 60

500

200 22.8 80

500

175 2 *25 -

125 10 12

-

200 11.43 15

500

200 20 50

500

200 20 50

500

100 4 *15 -

100 4 *12 -

100 4 *15 -

100 4 *12 -

100 4 *12 -

125 5 6

80

125 5 12

80

100 3.33 *30 40.0

200 6.85 15

500

125 5. 0 15

-

125 5 40

100

150 2

15

50

200 - *15 -

200 1.71 6

50

125 5. 0 12 -

125 5 40

100

200 6.85 15

500

200 6.85 15

200

175 5.33 35

-

175 5.33 35

-

175 5.33 35

-

175 3.33 35

-

175 3.33 35

-

175 3.33 35

-

200 5 6

-

200 1.71 15

-

CHARACTERISTICS

hfe *hFE
*40-160 *100-400 *30-120 *30-120 *15-120

1co Coe *1crn *Cob
(µA) (pF)
tO.l *4 tO.l *4 .025 (max) 6 (max) .025 (max) 6 (rr.ax) .015 *3

Pockoge Vce(sot) Outline
(V) (TO-)

0.22

92

0.22

92

0.4 (max) 52

0.7 (max) 52

0.35

52

Remarks

*30

3

*4

-

18

*--50

3 3
3

*4

-

*4

-

*4

-

18 lB
18

25

0.01 *2.8 0.25

lB FA, SY, TR, GI, NA, ITT, SPR

*30-120 0.5
25-150 -
*35-100 0.5 *55-200 0.5 35-100 0.5

*5

0.18

4

0.4

*5.2 0.3

*5.2 0.3

*5.2 0.3

18 Tl 46
98 98 98

55-200 *25 (rr.in) *25 *30-120
*45

0.5

*5.2

0.5 (max) 4 (max)

0.5

*4

t

*5

0.005 *5

0.3

98

.25 (max) 52

0.25

92

0.2

92

0.3

18

tic Es =0.5
SY, MO, TR, GI, AMP, ITT, SPR, RCA, MO, NUC

*20

10

*5

0. 6

18 FA, SY, TR,,GI, ITT, GE, MO,

RA, RCA

4

.005 *5

.3

18 FA, SY, GI, TR, ITT

*12

0.005 *5

0.3

18 TRWS, MO, GI

*50

0.004 *4

0.3

*25

0.1

*40

.4

*50-150 .25

*B

0.5

*3.5 .18

*8

.45

18 SY, MO, TR, GI, AMP, ITT, RCA,

MO, NA, NUC

18

18 SY. RCA. Tl, LAN

5

SPR, GI, SY, NA

*100 -300 .25

*8

.45

5

SPR, GI, SY, NA

50-150 .25

*8

.45

18 SPR, GI, NA

*100 -300 .25

*8

.45

18 SPR, GI, NA

*30-120 0.4

*4

0.2

18

*30-120 0.0B *6

0.15

18 Tl

*40-120 t .005

*40-120 0.01 *4.5 0.15

-

-

9.0

.75

-

-

9.0

.75

*20 (min) 0.5 (max) 5

0.3

t lcex 18 5 5 52

*40-150 .OB

30-120 -

*150

-

*150

-

*40

.4

*40

.4

*70

.4

*70

.4

*70

.4

*30-120 t

*6

0.15

4

0.4

12

.75

10

.95

*2.2 0.13

·z.z .13
*2.2 .11 *2.2 .11
*2.2 .11 *3.5 0.16

92 46 5 5 18 RCA
18 RCA 18 RCA 18 RCA 18 RCA 92 tlcEs =.01

*30-120 t

*3.5 0.2

13.0

2.0

4.0

0.54

*40

0.1

*2.5 0.2

*60

0. 4 *3. 3 0. 39

200

-

4.5

.3

92 tlcEs =.01

5

Tl, MO

18 TR, AL, MO, SPR

-

ICE, GME

-

RO 110 package

*45

.5

*5

.25

18 NA

-

0.002 *2.1 0.26

18

*25-125 0.1

*3

0.25

52 Tl

*63 300

0. 00005 *l. 85 0.18

-

4.5

.3

--

IEC, GME ROllO package

*80

0.1

*2.5 0.2

*65

0.05 *2.3 0.14

*20-60 .01

*8

0.4

*40· 120 .01

*8

0.4

*100·300 .01

*8

0.4

18 TR, MO, AL

18 TR, AL, SPR

5

STC, SPR

5

STC,SPR

5

STC, SPR

*20-60 .01

*8

0.4

*40-120 .01

*8

0.4

*100·300 .01

*8

0.4

*55

0.005 *2.5 0.21

50

0.0005 *1.5 0.4

18 STC, SPR 18 STC,SPR 18 STC,SPR
18 SY, AL, Tl, TR, VEC 18 Tl, RCA, AL, TRWS

(see pages 4-9 for explanation of company abbreviations.)

82

ELECTRONIC DESIGN

Low-Level (continued)

Cross Index Key LL 36
LL 37
LL 38
LL 39
LL40
LL 41
LL 42

Type
Ho.
V-120 2N918 2N955A MM2550 MM2552

Mfr.
VEC FA RCA MO MO

MM2554 MO 2N3959 MO 2N3960 MO
2N4260 MO 2N4261 MO

BSY 62 SA

2N284

AMP

2N284A AMP

2N337

Tl

2N33B

Tl

2N39B

2N586

RCA

2N705

Tl

2N707 A Tl

2N710 Tl

2N711

Tl

2N711A Tl

2N711B Tl

2N725

Tl

2N744 Tl

2N781

SY

2N782

SY

2N797

Tl

2N849/ Tl430 Tl

2N850/T~31 Tl

2NB51/T14n Tl

2N852/T1423 Tl

2N985

Tl

2N999

FA

2Nl216 RCA

2Nl228 HU
2Nl229 HU 2N 1230 HU 2Nl231 HU 2N 1232 HU

2Nl233 HU 2N 1234 HU
2Nl302 Tl 2111303 Tl
2N 1304 Tl

2N 1305 Tl
2N 1306 Tl 2N 1307 Tl 2N 1308 Tl
2N 1309 Tl

2N 1404 Tl 2N 1404A Tl 2N 1507 Tl 2Nl510 GE 2Nl853 RCA

2Nl917 SSD 2Nl918 SSD
2Nl919 SSD

2N 1920 SSD

2Nl921 SSD
2N 1922 SSD 2Nl994 Tl
2Nl995 Tl 2N 1996 Tl 2N 1997 Tl 2N 1998 Tl 2Nl999 Tl

MAX. RATINGS

lae

*IT

p c

Type

(MHz) (mW)

npn,PE,si

*800 -

npn,PE,si

*900 0.3

npn, DD, ge *1000 150

pnp,EP,DJ,ge *1000 300

pnp, EP, DJ,ge *1000 600

T.

VCEO

J

*VCBO

(ocl mW/° C (V)

200 -

*15

200 1.71 15

100 -

*12

100 4 10

100 8 10

pnp, EP ,DJ ,ge ·1000 600 100 8

10

npn,AE,si

*1300 750 200 4.3 12

npn,AE,si

*1600 750 200 4.3 12

pnp,AE,si

*1600 200 200 1.14 15

pnp,AE,si

*2000 200 200 1.14 15

npn,EP,PL,si *200000 860 175 7 15

pnp,AJ,ge

-

125 75 2.5 32

pnp,AJ,ge

-

125 75 2.5 60

npn,si

-

125 150 1 *45

npn ,si

-

125 150 1 *45

pnp,AJ,ge

-

50 55 -

105

pnp,AJ,ge

-

250 85 -

*45

pnp,ge

-

150 100 2 *15

npn,si

-

500 175 3.33 40

pnp,ge

-

300 100 4 *15

pnp,ge pnp,ge pnp,ge
pnp,ge
npn,si

-

150 100 2

*12

-

150 100 2 7

-

150 100 2 7

--

150 100 2 *15

300 175 2

12

pnp,EP,ge

-

pnp,EP,ge

-

npn,ge

-

npn,si

-

npn,si

-

300 100 -

*15

300 100 -

*12

150 100 2 7

300 175 2

15

300 175 2

15

npn,si

-

npn,si

-

pnp,ge

-

npn,DP,si

-

pnp,MS,ge

-

300 175 2

12

300 175 2 12

150 100 2

7

500 200 10.3 60

75 - -

*25

pnp

-

pnp

-

pnp,

-

pnp

-

pnp

-

pnp

-

pnp

-

npn,ge

-

pnp,ge

-

npn,ge

-

pnp,ge

-

npn,ge

-

pnp,ge

-

npn,ge

-

pnp,ge

-

pnp,ge

-

pnp,ge

-

npn,si

-

npn, GR, ge -

pnp, OM, ge -

AJ

-

AJ

-

AJ

-

400 160 -

15

400 160 -

15

400 160 -

35

400 160 -

35

400 160 -

60

400 160 -

60

400 160 -

110

150 85 2.5 *25

150 85 2.5 *30

150 85 2.5 *25

150 85 2.5 *30 150 85 2.5 *25 150 85 2.5 *30 150 85 2.5 *25 150 85 2.5 *30

150 85 2.5 *25

150 85 2.5 *25

600 175. 4 *60

75 85 1.25 *75

150 85 -

*18

250 175 1.67 8 250 175 1.67 8 250 175 1.67 18

AJ

-

250 175 1.67 18

AJ
AJ npn,ge
npn,ge npn,ge pnp,ge pnp,ge pnp,ge

-

250 175 1.67 50

-

250 175 1.67 80

-

150 85 2.5 15

-

150 85 2.5 15

-

150 85 2.5 15

-

250 100 3.3 15

-

250 100 3.3 15

-

250 100 3.3 15

CHARACTERISTICS

IC (mA)

hie *hFE

1co Coe *1cEO *Cab
(µA) (pF)

Package
Vce(sat) Outline (V) (TO-)

Remarks

-

*110

50

*50

150 *50

100 *20

100 *30

.00009 *2.1

.12

18

0.0002 *1.4 0.12

18 MO, Tl, RCA, AL, TRWS, VEC

0. 6 *4

0. 22

18

10

*3

0.2

18

10

*3

0.2

5

100 *30

10

*3

0.25

5

30

*40-200 0.1

*2.5 0.2

18

30

*40-200 0.1

*2.5 0.2

18

30

*30-150 t .005 *2.5 0.35

72

30

*30-150 t.005 *2.5 0.35

72

200 20-60

0.5

5

0.6

125 *45

4.5

-

0.4

125 *45

4.5

-

0.4

20

66

1

*1.2 -

20

99

1

*1.2 -

18

1

1

5

GE, TR

5

GE, Tff

100 *20

250 30

50

*40

100 *9

50

*40

14

-

0.35

5 MO, GI , Tl, RCA

12

-

0.25

7

0.3

*5

0.3

18 SY, MO , RCA

1 3

*-6

0.6 0.5

18 MO , GI 18 SY, RCA

100 1.5

100 *40

100 *40

50

*20

200 *40

3

*7.5 0.5

18 SY I MO, AMP ' RCA

1.5

*6

0.30

18 SY, MO

1.5

*6

0.25

18 SY, MO

3

*5

-

18

1

*5

0. 35

18 FA, SY, MO, TR, GI, ITT

200 *25

200 *20

150 *40

50

*20

50

*40

3

-

0.2

18 AL

3

-

0.2

18

1

*4

0.14

18

0.5

*5

0.6

50

0.5

*5

0.6

50

200 *20 200 *40
200 *60 500 100 -

-

*5

0.35

50

-

*5

0.35

50

3

*6

0.15

18 MO

0.0001 *15

1.2

18

-

-

-

5

-

20

-

40

-

20

-

40

-

20

.1

-

.2

5

SPR,AMP,CT

.1

-

.2

5

SPR,AMP, CT

.1 .1

I

-
-

.2 .2

5

SPR, AMP, CT

5

SPR,AMP, CT

.1

-

.2

5

SPR,AMP,CT

-

40

.1

-

.2

5

SPR,AMP,CT

-

20

.1

-

.2

5

SPR,AMP,CT

300 *20

6

*20

0.2

5

AMP, GE , RCA,NUC

300 ·20

6

20

0.2

5 AMP,GI, RCA,NUC

300 *40

6

20

0.2

5 AMP, GI, RCA, NUC

300 *40

6

20

0.2

5

AMP,GI, RCA,NUC

300 *60

6

20

0.2

5 AMP, GI, RCA,NUC

300 *60

6

20

0.2

5

AMP, GI , RCA,NUC

300 *80

6

20

0.2

5 AMP, GI, RCA,NUC

300 *80

6

20

0.2

5

AMP,GI, RCA,NUC

300 -

5

*20

0.15

300 *30

5

*20

0.15

la

*100

1

*35

1.5

20

*30

0. 5 -

0.26

100 30-400

4. 2

-

0. 2

5

5

5

CDC, AL

-

5

Tl

50

*25

50

*25

50

-

50

-

.002 *14

.002

5 TRWS, CT, Chopper Pairs, SPR

.006 *14

.004

5

Chopper Pairs, CT, SPR

.002 *14

.003

5

TRWS, AMP, CT, Chopper Pairs,

SPR

.003 *14

.004

5

TRWS, AMP, CT, Chopper Pairs,

SPR

50

-

50 -
300 *15

.004 *14

.005

5 TRWS, AMP, CT, Chopper Pairs ,

SPR

.004 *14

.005

5

CT, Chopper Pairs, SPR

6

*20

0.25

5

300 *25

6

300 *35

6

500 *40

5

500 *70

5

500 *100

5

*20

0.25

*20

0.25

*20

0.2

*20

0.2

*20

0.2

5

5

5

ETC

5

ETC

5

ETC

(see pages 4-9 for explanation of company abbreviations.)

May 17, 1966

83

Low-Level (continued)

Cross Index Key LL 43
LL 44
LL 4S

Type Ho. Mfr.

2N2000 Tl 2N2001 Tl
2N21BB Tl 2N21B9 Tl 2N2190 Tl

2N2191 Tl 2N2SS1 HU
2N2692 Tl 2N2871 HU 2N2B72 HU

2N2938 RCA

3217

CT

3218

CT

3219

CT

2N40S8 Tl

2N4059 Tl

2N4060 Tl

2N4061 Tl

2N4062 Tl

2013

BU

PADT60 AMP

SA-537 SPR

SA-538 SPR

SA-539 SPR

SA-540 SPR

lV-120RH VEC

VV--121210

VEC VEC

V-222 VEC

fae

*fT

Type

(MHz)

pnp,ge

-

pnp,ge

-

pnp,ge

-

pnp,ge

-

pnp,ge

-

pnp,ge

-

pnp

-

npn,si

-

pnp

-

pnp

-

npn,PE,si

-

pnp,si

-

pnp,si

-

pnp,si

-

pnp,PE,si

-

pnp,PE,si

-

pnp,PE,si

-

pnp,PE,si

-

pnp,PE,si

-

-

-

pnpn,PADT,ge -

pnp,SP ,si

-

pnp, SP ,si

-

pnp,SP ,si

-

pnp,SP ,si

-

npn,PL,si

-

npn,PE,si

-

npn,PE,si

-

npn,PE,si

-

MAX. RATINGS

p c
(mW)

T.

VCEO

J

*VCBO

(ocl ~W/°C (V)

300 100 4

15

300 100 4

15

125 B5 2.1 25

125 BS 2.1 2S

12S BS 2.1 2S

12S 8S 2.1 2S

400 160 -

lSO

300 175 2

30

400 160 -

60

400 160 -

110

300 175 -

*25

400 200 2.3 *lS

400 200 2.3 *2S

400 200 2.3 *40

250 125 2.S 30

2SO 12S 2.S 30

2SO 12S 2.S 30

2SO 12S 2.5 30

2sSoOo

12S 2.5
lSO -

30 *6S

83 7S 1.7 *3S
150 140 1.3 *25 150 140 1.3 *10 150 140 1.3 *25 150 140 1.3 *10

350 200 -

10

- 200 - *lS

-

200 -

*15

- 200 - *lS

lc (mA)
1000 1000 30 30 30
30 -
so
-
500 100 100 100 30
30 30 30 30 3.0
25 50 50
s5o0
-
-

CHARACTERISTICS

hie *hFE

1co Coe *1c rn *Cob
(µA) (pF)

Pockoge
Vce(sot) Outline (V) (TO-)

*50

10

*35

0.25

5

*100

6

*35

0.2

5

40

3

*2.5 -

-

60

3

*2.S -

-

40

3

*2.S -

-

60 20

3

*2.S -

-

-

-

-
s

*90

0.01 *S

0.2

18

20 20

-

-

-

-

-

-

s 5

*60

.003 3.S

0.22

18

s10

.001 *14

-

.001 *14

-

46 46

3

0. 001 *14

-

46

100

0.1

-

0.7

92

4S

0.1

-

0.7

92

4S

0.1

-

0.7

92

90

0.1

-

0.7

92

110 *30

0o..1s

-
7.0

o0..7s

92
t

-

50

*5

0.6

1

10

0.1

*9

0.15

1

10

0.1

*9 .

0.15

1

10

0. 01 *9

0.15

18

10

0. 01 *9

O.IS

18

*110

.0001 *U .13

18

*70 *110 *140

s 5 s

*3.0 .30 *3.0 .30 *3.0 .30

18 18 18

Remorks
SPR SPR SPR
t flat pack
4 Layer Control Device

(see pages 4-9 for explanation of company abbreviations.)

84

ELECTRONIC DESIGN

IRC can fill your MIL and industrial needs

Now, I RC offers one of the industry's largest selections ·of MIL and industrial zener diodes. And, with the addition of new production facilities, they are immediately available from stock to meet all your application, environment and price requirements.
· 229 MIL devices-power ratings range from 250mW up to 10 watts
· All popular industrial-type devices-power ratings up to 50 watts
· The industry's onlyl-wattzener in a 00-7 package

· New high-strength Poly-Sil zeners-up to 30% smaller and up to 2¥2 times more wattage dissipation than glass packages. Over 400 J EDEC types
· Complete selection of package styles and mechanical configurations
If you specify or buy zener diodes, you should know about the money-saving advantages of IRC's complete zener diode line. Write for ·new catalog, prices and samples to: I RC, l_nc., Semiconductor Division (formerly North American Electronics), 71 Linden Street, West Lynn, Massachusetts 01905.

; .ECTIFIERS
Complete choice, including sub-miniature, fast recovery and high-power types. All popular configurations.

/

AXIAL

/ tEAD RECTIFIERS

AR16-AR24 replaces 363 JEDEC devices for 50 to 1000 V/.25 to lA needs. Cost less than stud types.

MIL and industrial devices, including fast-switching types. Choice of ratings and package shapes.

/.

SPECIAL

/~/// ASSEMBLIES

< /

Rectifier stacks, potted bridges, epoxy resin encapsulations and high voltage assemblies.

ON READER-SERVICE CARD CIRCLE: 55

May 17, 1966

85

High-Level Switching
Generally types rated ~tone watt and above. In
order of fa(> or f.r.

Cross

!ndex Type

Key

Ho.

Mfr.

2N 1518

DE

2Nl519

OE

HL 1 2N 1520

DE

2N 1521

DE

2N 1522

DE

Type
pnp,AJ,ge pnp,AJ,ge pnp,AJ,ge pnp,AJ,ge pnp ,AJ ,ge

2N 1523
2N2230 2N2231 2N2232
2N2233
HL 2 2N2560 2N2564 2N2565 2N618 2N 1907

OE pnp,AJ,ge

WH

npn, AJ, si

WH

npn,AJ,si

WH

npn,AJ,si

WH

npn,AJ,si

Tl

pnp,ge

KSC pnp,ge

KSC pnp,ge

MO

pnp,AJ,ge

Tl

pnp,ge

2N 1908

Tl

pnp,ge

2N2226

~LH

npn, AJ, si

2N2227

WH

npn, AJ, si

2N2228

WH

npn, AJ, si

2N2229

WH

npn, AJ, si

HL3

2Nl809

WH

npn, AJ, si

2LNN:l8a1l0l

WH 'l/H

npn, AJ, si npn. AJ, si

2Nl812

WH

npn,AJ,si

2N 1813

WH

npn,AJ,si

2Nl814

l'IH

npn,AJ,si

2N 1830

WH

npn,AJ,si

2Nl831

WH

npn,AJ,si

2N 1832

WH

npn,AJ,si

ZN1833

WH

npn,AJ,si

HL 4

2N2109

WH

npn,AJ,si

2N2110

WH

npn,AJ,si

2N211 l

WH

npn,AJ,si

2N2112

WH

npn,AJ,si

2N2113

WH

npn,AJ,si

2N2114

WH

npn,AJ,si

2N2130

WH

npn,AJ,si

2N2131

WH

npn,AJ,si

2N2132

WH

npn,AJ,si

2N213 3

WH

npn,AJ,si

HL 5 2N2739

WH

npn,AJ ,si

2N2740

WH

npn,AJ,si

2N27 41

WH

npn,AJ,si

2N27 42

WH

npn,AJ,si

2N2757

WH

npn,AJ,si

2N2758

V/H

npn,AJ,si

2N2759

WH

npn,AJ,si

2N2760

WH

npn,AJ,si

2N2761

VIH

npn,AJ,si

2Nl816

WH

npn,AJ,si

HL 6

2N 1817

WH

npn,AJ,si

2Nl818

WH

npn,AJ,si

2Nl819

WH

npn,AJ,si

2N2116

WH

npn,AJ,si

2N2117

WH

npn,AJ,si

2N2118

WH

npn,AJ,si

2N2119

WH

npn,AJ,si

2N2745

WH

niJTl,AJ,si

2N2746

WH

npn,AJ,si

2N2747

WH

npn,AJ,si

HL 7

2N27 48

WH

npn,AJ,si

2N2763

WH

npn,AJ,si

2N2764

WH

npn,AJ~si

2N 2765

WH

npn,AJ,si

2N2766

WH

npn,AJ,si

86

fae
*fr
(kHz)
4 4 4 4 4
4 7 7 7 7
8 8 8 8.5 *10
*10 10 10 10 10
14 14 14 14 14
14 14 14 14 14
14 14 14 14 14
14 14 14 14 14
14 14 14 14 14
14 14 14 14 14.5
14.5 14.5 14.5 14.5 14.5
14.5 14.5 14.5 14.!:J 14.5
14.5 14.5 14.5 14.5 14.5

MAX. RATINGS

p

T;

c

(W)

(oC)

150 100
150 100 150 100
150 100 150 100

VCEO

*Vcso

'c

W/ °C

(V)

(A)

.5

40

25

.5

60

25

.5

40

35

.5

60

35

.5

40

50

CHARACTERISTICS

hie *hFE

1co * 1cEO
tic ex
(mA)

vce(sat)

Package Outline

(V) (TO-)

*!5-60

4

*15-60

4

*17-68

4

*17·68

4

"25-100

4

.7

36

.7

36

.7

36

.7

36

.7

36

Remorks
ETC ETC ETC ETC ETC

150 100

.5

150 150

2

150 150

2

150 150

2

150 150

2

60

50

50 10

100 10

150 10

200 10

*25· 100

4

*400

10

*402

10

*400

10

*400

10

.7

36

ETC

2. 2 -

2.2 -

2.2 -

2. 2 -

20

100

0.5

20

100

0.5

20

100

0.5

90

100

1.25

60

100

2

*40 3

*40 3

*..6~0o

3 3

*100 20

*20-60

0.65

*20-60

0.65

*20-60

0.65

*90

0.8

*20

0.5

-

-

-

-

-

-

.3

3

1.0

3

NA, KSC, BE KSC

60

100

2

150 150

2

150 150

2

150 150

2

150 150

2

*130 20

*20

0.5

50

10

*100

1'.l

100 10

*100

10

150 10

*100

10

200 10

*100

10

1.0 3
2. 2 2. 2 2.2 -
2.2 -

250 175

2.22

50

30

*10

15

0.4 -

250 175

2.22

100 30

*10

15

0. 4 -

250 175

2.22

150 30

*10

15

0.4 -

250 175

2.22

200 30

*10

15

0.4

-

250 175

2.22

250 30

*10

15

0.4 -

250 175

2.22

300 30

*10

15

0.4 -

250 175

2.22

50

30

*10

15

0.875 -

250 175

2.22

100 30

*10

15

0.875 -

250 175

2.22

150 30

*10

15

0.875 -

250 175

2.22

200 30

*10

15

0.875 -

250 .75

2.22

50

30

*10

15

0.4

-

250 175

2.22

100 30

*10

15

0.4

-

250 175

2.22

150 30

*10

15

0.4 -

250 175

2.22

200 30

*10

15

0.4 -

250 175

2.22

250 30

*10

15

0.4

-

250 175

2.22

300 30

*10

15

0.4

-

250 175

2.22

50

30

*10

15

0.875 -

250 175

2.22

100 30

*10

15

0.875 -

250 175

2.22

150 30

*10

15

0.875 -

250 175

2.22

200 30

*10

15

0.875 -

200 175

2

50

20

*10

15

0.4

-

200 175

2

100 20

*10

15

0.4

-

200 175

2

150 20

*10

15

0.4 -

200 175

2

200 20

*10

15

0.4

-

200 175

2

50

30

*10

15

0.4

-

200 175

2

100 30

*10

15

0.4 -

200 175

2

150 30

*10

15

0.4

-

200 175

2

200 30

*10

15

0.4 -

200 175

2

250 30

*10

15

0.4 -

250 175

2.22

50

30

*10

15

0.63 -

250 175

2.22

100 30

*10

15

0.63 -

250 175

2.22

150 30

*10

15

0.63 -

250 175

2.22

200 30

*10

15

0.63 -

250 175

2.22

50

30

*10

15

0.63 -

250 175

2.22

100 30

*10

15

0.63 -

250 175

2.22

150 30

*10

15

0.63 -

250 175

2.22

200 30

*10

15

0.63 -

200 175

2

50

20

*10

15

0.63 -

200 175

2

100 20

*10

15

0.63 -

200 175

2

150 20

*10

15

0.63 -

200 175

2

200 20

*10

15

0.63 -

200 175

2

50

30

*10

15

0.63 -

200 175

2

100 30

*10

15

0.63 -

200 175

2

lo50 30

*10

15

0.63 -

200 175

2

200 30

*10

15

0.63 -

(see pages 4-9 for explanation of company abbreviations.)

ELECTRONIC DESIGN

High- Level rcontinued)

Cross

Index Type

Key

Ha.

Mfr.

Type

2N 1823

WH

npn,AJ,si

2N 1824

WH

npn,AJ,si

2N 1825

WH

npn,AJ,si

2N 1826

WH

npn,AJ,si

2N2123

WH

npn,AJ ,si

HL 8

2N2124

WH

npn,AJ,si

2N2125

WH

npn,AJ,si

2N2126

WH

npn,AJ,si

2N2751

WH

npn,AJ.si

2N2752

WH

npn,AJ,si

2N2753

WH

npn,AJ,si

2N2754

WH

npn,AJ,si

2N2769

WH

npn,AJ,si

2N2770

WH

npn,AJ,si

2N2771

WH

npn,AJ,si

HL 9

2N2772

WH

npn,AJ,s,i

163-04

WH npn,AJ,si

163-0S

WH

npn,AJ,si

163·08

WH npn,AJ,si

163·10

WH

npn,AJ,si

HLlO

163·12 163·14 163·16 163·18 163·20
164-04 164-()6 164·08 164·10 164·12

WH npn,AJ,si

WH

npn,AJ,si

WH npn,AJ,si

WH

npn,AJ,si

WH npn,AJ ,si

WH

npn,AJ,si

WH 'npn,AJ,si

WH

npn,AJ,si

WH

npn,AJ,si

WH

npn,AJ,si

164·14

WH

164·16

WH

164·18

WH

164·20

WH

2N 1015

WH

HL 11 2Nl015A WH

2N 10158 WH

2Nl015C WH

2Nl015D WH

2Nl015E WH

npn,AJ,si npn,AJ,si npn,AJ,si npn,AJ,si npn,AJ,si
npn,AJ,si npn,AJ ,si npn,AJ,si npn,AJ,si npn,AJ,si

HL 12

2Nl702 151·04 151-06 151·08 151-10
152·04 152·06 152·08 152·10 2N 1016

RCA npn,si

WH

npn;AJ,si

WH

npn,AJ,si

WH

npn,AJ,si

WH npn,AJ,si

WH

npn,AJ,si

WH

npn,AJ,si

WH

npn,AJ,si

WH npn,AJ,si

WH npn,AJ,si

2Nl016A WH

npn,AJ,si

2Nl016B WH

npn,AJ,si

2Nl016C WH

npn,AJ,si

2Nl016D WH

npn,AJ,si

2N 1016E WH

npn,F J ,si

HL 13

2Nl701

RCA npn, si

HL 14

153-04 153·06
153-08 153·10 153·12 153·14 153-16
153-18 153·20 154·04 154-0S 154·08

WH

npn,AJ ,si

WH

npn,AJ,si

WH

npn,AJ,si

WH

npn,AJ,si

WH npn,AJ,si

WH

npn,AJ,si

WH

npn,AJ,si

WH

npn,AJ,si

WH

npn,AJ,si

WH

npn,AJ,si

WH

npn,AJ,si

WH

npn,AJ ,si

May 17, 1966

MAX. RATINGS

fae

*fy

p c

T.
I

Vern *Vcso le

(kHz)

(W)

(oC) W/ aC

(V)

(A)

16

250 175

2.22

50

30

16

250 175

2.22

100 30

16

250 175

2.22

150 30

16

250 175

2.22

200 30

16

250 175

2.22

50

30

16

250 175

2.22

100 30

16

250 175

2.22

150 30

16

250 175

2.22

200 30

16

200 175

2

50

20

16

200 175

20

100 2

16

200 175

2

16

200 175

2

16

200 175

2

16

200 175

2

16

200 175

2

150 20

200 20

50

30

100 30

150 30

16

200 175

2

22

200 175

2

22

200 175

2

22

200 175

2

22

200 175

2

200 30

55

20

75

20

%

20

115 20

22

200 175

2

22

200 175

2

22

200 175

2

22

200 175

2

22

200 175

2

135 20
155 20 175 20 195 20
215 20

22

200 175

2

22

200 175

2

22

200 175

2

22

200 175

2

22

200 175

2

55

20

75

20

95

20

ll5 20

135 20

22

200 175

2

155 20

22

200 175

2

175 20

22

200 175

2

195 20

22

200 175

2

m 20

25

150 150

1.43

30· 7.5

25

150 150

1.43

60

7.5

25

150 150

1.43

100 7.5

25

150 150

1.43

150 7.5

25

150 150

1.43

200 7.5

25

150 150

1.43

250 7.5

25

75

200

0. 429

40

5

25

100 150

1.4

80

6.0

25

100 150

1.4

120 6.0

25

100 150

1,4

160 6.0

25

100 150

1.4

200 6.0

25

100 150

1.4

80

6.0

25

100 150

1.4

6.0

25

100 150

1.4

160 6.0

25

100 150

1.4

200 £.0

30

150 150

1.43

30

7.5

30

150 150

1.43-

60

7.5

30

150 150

1.43

100 7.5

30

150 150

1.43

150 7.5

30

150 150

1.43

200 7.5

30

150 150

1.43

250 7.5

30

25

200

.143

40

2. 5

CHARACTERISTICS

1co

hie *hFE

*1cEo

Package

tic EX Vce(sat) Outline

(mA)

(V) (TO-)

*10

15

0.74 -

*10

15

0.74 -

*10

15

0.74 -

*10

15

0.74 -

*10

15

0.74 -

*10

15

0.74 -

*10

15

0.74 -

*10

15

0.74 -

*10

15

0.74 -

*10

15

0.74 -

*10

15

0.74 -

*10

15

0.74 -

*10

15

0.74 -

*10

15

0.74 -

*10

15

0.74 -

*10

1.5

0.74 -

*15

15

.30 -

*15

15

.30 -

*15

15

.30 -

*15

15

.30 -

*15

15

.30 -

*15

15

.30 -

*15

15

.30 -

*15

15

.30 -

*15

15

.30 -

*25

15

.25 -

*25

15

.25 -

*25

15

.25 -

*25

15

.25 -

*25

15

.25 -

*25

15

.25 -

*25

15

.25 -

*25

15

.25 -

*25

15

.25 -

*10

10

0.5

-

*10

10

*10

10

*10

10

*10

10

*10

10

*15·60

0.2

*11

10

*11

10

*11

10

*11

10

0.5

-

0.5 -

0.5

-

0.5

-

0.5 -

-

3

0.6

-

0.6

-

0.6 -

0.6

-

*18

10

0.9 -

*18

10

0.9 -

*18

IO

0.9 -

*18

10

0.9 -

*8

10

0.6 -

*10

10

0.6

-

*10

10

0.6 -

*10

10

0.6 -

*10

10

0.6 -

*10

10

0.6 -

*20-80

.1

-

8

Remarks
STC STC STC STC STC STC STC
STC STC STC STC STC STC STC

33

200 175

1.33

*65 7.5

*15

10

0.6 -

33

200 175

1.33

*85 7.5

*15

10

0.6 -

33

200 175

1.33

*105 7.5

*15

10

0.6 -

33

200 175

1.33

*125 7.5

*15

10

0.6

-

33

200 175

1.33

*145 7.5

*15

10

0.6 -

33

200 175

1.33

*165 7.5

*15

10

0.6 -

33

200 175

1.33

*185 7.5

*15

10

0.6 -

33

200 175

1.33

*205 7.5

*15

10

0.6 -

33

200 175

1.33

*225 75

*15

10

0.6 -

33

200 175

1.33

*65 7.5

*25

10

0.9

-

33

200 175

1.33

*85 7.5

*25

10

0.9

-

33

200 175

1.33

*105 7.5

*25

10

0.9 -

(see pages 4-9 for explanation of company abbreviations.)

87

High-Level <continued)

Cross

Index Type

Key No.

Mir.

Type

HL 15

154-10 154-12 154-14 154-16 154-18
154-24 2N 1409 2Nl410 2Nl768 2N 1769

VIH npn,AJ,si

WH npn,AJ ,si

WH

npn,AJ,si

WH npn,AJ ,si

WH npn,AJ,si

WH npn,AJ,si RA npn,si RA npn,si
npn, si
npn, si

1ae

*fr

p c

(kHz) (W)

33

200

33

200

33

200

33

200

33

250

33

200

*40

2.8

*40

2.8

40

40

40

40

HL 16

2N3850 2N3852 2N2310 2N2311 2N2312
2N2313 2N2314 2N2315 2N2316 2N2317

SSP npn,TDP SSP npn,TDP RA npn,s.i RA npn,si RA npn,si RA npn,si RA npn,si RA npn,si RA npn,si RA npn,si

*40

30

*40

30

*50

3

*50

'3

*50

3

*50

3

*50

3

*50

3

*50

3

*50

3

HL 17

2N3506 2N3507 2N2270 2N346B 2N3495
2N3497 2N3498 2N3499 2N3500 2N3501

MO npn, EA, si MO npn,EA,si RCA npn,si '.10 pnp,EA,si MO pnp.EA,si
MO pnp, EA,si MO npn,EA,si MO np·n,EA,si MO npn,EA.si MO npn,EA,si

*60

5

*60

5

*100

5

*150

5

·150

3

·150

1.8

*150

5

*150

5

*150

5

*150

5

2N3634

MO

pnp, EA,si

2N3636

MO

pnp,EA,si

mm MO npn, AE, si

2N3444

MO

npn,AE,si

2N3467

MO

pnp,EA,si

*150

5

*150

5

*175

5

*175

5

*175

5

HLIB 2N456B Tl

pnp,ge

*200

150

2N457B, Tl

pnp, ge

*200

150

2N458B Tl

pnp,ge

200

150

2Nl666

AMP pnp,PADT,ge 200

30

2Nl667

AMP pnp,PADT,ge 200

30

2Nl668

AMP pnp,PADT,ge 200

30

2Nl669

AMP pnp,PADT,ge 200

30

2N2397

SY

npn,PE,si

*200

300

2N3252

MO

npn, AE, si

*200

5

2N3426

FA

npn, PE, si

*200

3.0

HL 19

2N3429

WH

npn ,AJ,si

2N3430 WH npn ,AJ,si

2N3431

WH

npn,AJ ,si

2N3432

\'IH

npn,AJ .si

2N3433

WH

npn,AJ ,si

*200

150

*200

150

·200

150

*200

150

*200

150

-

2N3434

VIH

2tl3485

MO

2N3~85A

MO

2N3486

MO

npn,AJ,si pnp,AE,si
pnp,AE .si pnp,AE:.,si

*200

150

*200

2

*200

2

*200

2

HL20 2N3486A MO

2N3494

MO

2N3496 MO

2N3635

MO

2N3637

MO

pnp,AE,si pnp, EA,si pnp,EA,si pnp,EA,si pnp,EA,si

*200

2

*200

3

*200

1.8

*200

5

*200

5

2N2217

MO

npn,EA,si

250

3

2N2218

MO

npn,AE,si

*250

3

2N2219

MO

npn, AE, si

250

3

HL 21 2N2219

MO

npn,AE,si

250

3

2N2220

MO

npn,AE ,si

250

1.8

2N2221

MO

npn, AE, si

250

1.8

MAX. RATINGS

T.

VcEO

J

*Vcso 'c

(oC) W/ °C

(V)

(A)

175

1.33

175

1.33

175

1.33

175

1.33

175

1.33

*125 7.5 *145 7.5
*165 7.5
*185 7.5
*205 7.5

175

1.33

150

.22

150

.22

200

. 229

200

.229

*225 7.5 *30 05 *30 0.5
40 3
55 3

200

0. 4

200

0. 4

300

.017

300

.017

300

.017

*100 5

*60 5

60

0.5

100 0.5

60

0.5

300

.017

300

.017

300

.017

300

0.17

300

0.17

100 0.5

35

0.5

35

0.5

60

0.5

40

0.5

200

0.029

40

3

200

0.029

50

3

200

.0286

45

1

200

0.0057 50

1

200

0.0172 120 100

200

0.0103 120 100

200

0.0057

100 0.5

200

0.0057 100 0.50

200

0.0057 150 0.30

200

0.0057 150 0.300

200

0.029

140 1

200

0.029

175 1

200

0.029

40

-

200

0.029

50

-

200

0.0057 40

1

100

2.0

100

2.0

100

2

90

-

90

-

30

7

40

7

45

7

60

6

48

6

90

-

48

6

90

-

60

6

200

-

*35 200

200

0.029

30

-

200

0.017

12

1.0

175

1.33

175

1.33

175

1.33

175

1.33

175

1.33

·so 7.5
·100 7.5 150 7.5 *200 7.5 *250 7.5

175

1.33

*300 7.5

200

0.011

40

0.6

200

0.011

60

0.6

200

0.011

40

0.6

200

0.011

60

0.6

200

0.0172 80

100

200

0.0103 BO

100

200

0.029

140 1

200

0.029

175 I

175

. 02

30 0.8

175

. 02

30 0.8

175

.02

30

0.8

175

.02

30

0.8

175

.012

30

0.8

175

. 012

30

0.8

CHARACTERISTICS

hie
*hFE
*25 *25 *25 *25 *25

1co *1cEO
tic EX (mA}
10 10 10 10 10

vce(sot)

Packoge Outline

(V) (TO-)

0.9 -
0.9 0.9 0.9 -
0.9 -

*25

10

*30

.010

*60

.010

*35·100

· 015

*35·100

· 015

0.9

-

0.5 5

0.5 5

-

-

-

-

*150

.0001

0.25 59

*150

.0001

0. 25 59

*12

10

5

46

*12

10

5

46

*30

10

1.5 46

*30

10

5

46

*15

10

1.5 46

*40

10

1.5 46

*40

10

5

46

*40

10

1.5 46

*40-200
*30·150 *50·200 *25·75 *40

t 0. 001
t 0. 001
5 0.0001 0.0001

1. 0 5

I. 0 5

-

5

0.6 5

0.35 5

*40 *40-120 *100-300 *40-120 *100-300

0.0001 0.00005
0.00005
0.00005 0.00005

0.35 18 0.4 5 0.4 5 0.4 5
0.4 5

*50-150 *50-150
*25·75 *20-60 *40-120

0.00010 0.5 5

0.00010 0.5 5

0. 0005

0.6

5

0.0005

0.6 5

0.0001

0.5 5

*40

0. 5

-

3

*40

0.5

-

3

*40

7.0

-

3

*55

<100

-

3

140

<100

-

3

75 llO *25· 120 *30-90 *50
*10 *10 *10 *10 *10
*10 *40-120 *40-120 *100-300

<100

-

3

<100

-

3

0.1

0.3 51

0. 0005

0. 5 5

0. 0000015 0.18 -

10

0.9 -

10

0.9 -

10

0.9 -

10

0.9 -

10

0.9 -

10

0.9 -

0.00002 0.4 46

0.00001

0.4

46

0.00002 0.4 46

*1 00-300

0.00001

0.4

46

*40

0.0001

0.3 5

*40

0.0001

0.3

18

*100-300 0.00010 0.5 5

*100-300 0.00010 0.5 5

20-160 *40. 120 100·300

0. 00001 0. 00001
o. 00001

0. 4 5

-

5

C.4 5

100-300

0.00001

0.4

5

20-60

0. 00001 0. 4 18

40-120

0. 00001 0.4 18

Remorks
GI GI STC STC
t lcex t lcex TRWS, GI Tl
TRWS
DE, KSC, ITT DE, KSC, ITT Tl, DE
Tl Tl Tl Tl
GI, SY, SPR, TR, AMP, TRWS , AL Gl,SY,SPR, TR, AMP, TRWS, AL GI, SY, SPR, TR, AMP GI, SY, SPR, TR , AMP, AL GI, SPR, TR, AMP, AL GI, SPR, TR, AMP, AL

(see pages 4-9 for explanation of company abbreviations.)

88

ELECTRONIC DESIGN

High-Level (continued)

MAX. RA TINGS

CHA RAC TE RISTICS

Cross

Index Type

Key

Ho.

Mfr.

Type

fae

VcEO

*fy

p c

(kHz) (W)

T;

*Vcso le

(oC) W/°C

(V) (A)

hfe *hFE

1co *1cEo tic Ex (mA)

Package Vce(sat) Outline
(V) !TO-I

Remarks

2N2222

MO

npn,AE,si

250

1. 8 175

.012

30

0.8

100-300

0.00001 0.4 18

TRWS, GI, SPR, TR,

AMP, AL

2N3250A MO pnp ,AE,si

*250

1.7 200

0.0069 60

0.2

*50-150

t0.00002 0.25 18

tlcex

2N3734

MO

npn ,AE, si

*250

4

200

. 023

30 1.5

*30-120

t.0002

0.2 5

·

2N3504

FA

pnp, PE, si

2N3735

MP

npn, AE, si

*250

1.3 200

0. 0022 45

0.6

*250

4

200

. 023

50

1.5

*70 *20-80

0.050

0.5 18

Tl

t.0002

0.2 5

HL 22

2N3736

MO

npn, AE,si

*250

2

200

. Oll

30

1.5

*30-120

t.0002

0.2 46

2N3737

MO

npn,AE,si

*250

2

200

.Oll

50

1. 5

*20-80

t.0002

0.2 46

2N914/ 46 SY

npn,PL,EP,si *300

400 200

-

*40 -

*30-120

.025

0.7 46

GI

2N2481

MO

npn,AE,sl

*300

1.2 200

0.0069 15

-

*40-120

0.00005

Q25 18

Tl

2N3251A MO

pnp, AE, si

2N3647

MO

pnp, EA, si

2N3510

MO

npn, EA, -si

2N3714

MO

npn,si

2N3511

MO

npn, EA, si

HL 23

2N3648

MO

npn, EA, si

2N3227

MO

npn,AE ,si

2N30SS

RCA npn,si

2N3470

WH

npn,AJ,si

2N3471

WH

npn,AJ,si

*300

1.2 200

0. 0069 60

0.2

*350

2.0 200

0. Oll

10

0. 50

*350

1.2 200

0. 0069 10

0. 50

*400

150 200

.857

80 10

*450

1.2 200

0. 0069 15

0. so

*4SO

2.0 200

0.011

lS

0. 50

·soo

1.2 200

0.0069 20

-

·soo

llS 200

0.6S7

60

lS

·soo

lSO 150

2

·so 10

*SOO

lSO lSO

2

*100 10

"'100-300 *25-150 *25-150 *25-90 *30-120
*30-120 "'100-300 *20- 70 *100 *100

t 0. 00002 0. 25 t 0. 000025 0.4

18 46

t 0. 000025 0.4 52

ttl0.. 0000025I

1.0 0.4

3 S2

t0.00002S 0. 4 46

0.0002

·o.2s 18

ts 10

1.1 3
2.2 -

10

2.2 -

t lcev, MO

2N3472

WH

npn,AJ ,si

2N3473

WH

npn,AJ ,si

2N347 4 WH

npn,AJ ,si

2N3475

WH

npn,AJ,si

2N3476

WH

npn,AJ,si

HL 24

2N3477

WH

npn,AJ ,si

2N3508

MO

npn,EA,si

2N3509

MO

npn,EA,si

2N3013

FA

npn,PE,si

2N3014

FA npn,PE,si

*SOO

lSO lSO

2

*500

lSO lSO

2

*SOO

lSO lSO

2

*SOO

lSO lSO

2

·soo

lSO 150

2

*lSO 10 ·200 10 ·so -10 ·100 10 *150 10

*SOO

lSO lSO

2

*200 10

*SOO

2.0 200

O.Oll

20

-

*SOO

2.0 200

0.0ll

20

-

*S50

1.2 200

0.0068S lS

-

*SSO

1.2 200

0.00685 20

-

*100

10

*100

10

*400

10

*400

10

*400

10

2.2 2.2 -
2.2 -
2.2 2.2 -

*400

10

2.2 -

*40-120

0.0002

0.25 46

*100-300 0.0002

0.25 46

*60

40

0.16 S2

Tl

*60

40

-

52

Tl

HL2S

2N3424 2N3546 2N30S4 156.{)4 1S6-06
156.{)8 1S6-10 OC80 OC22 OC23

FA

npn, PE, si

MO

pnp, EA,si

RCA npn, si

WH

npn,DJ ,si

WH npn,DJ,si

"'600

1.2 200

*700

1.2 200

*1000 2S

200

*1000 120 200

*1000 120 200

WH

npn,DJ ,si

*1000 120 200

WH

npn, DJ ,si

*1000 120 200

AMP pnp,PADT,ge 2000

.SS 7S

AMP pnp,PADT,ge 2SOO

lS

7S

AMt' pnp,PADT,ge 2SOO

16

75

0. 29

15

. oso

0. 0069

12

-

0.143

55

4

0.68

40

8

0.68

60

8

0.68 - 80

8

0.68

100 8

-

*32 0.3

.333

32

I

.333

40

1

·20-200 *30-120 *25-100 "'15 *lS
*lS *15 180 *200 *200

0. 000010 0. 4 -

0.000010 0.15 18

1.0

1. 0 66

20

1.0 3

20

1.0 3

20

1.0 3

20

1.0 3

.01

-

1

.03

-

3

.03

-

3

OC24 2N5Sl

AMP pnp,PADT,ge 2SOO

lS

7S

.333

TR npn,PL,si

3000

3

17S

.025

32

1

60

.2

2NSS2

TR npn,PL,si

2N 1055

TR

npn,PL,si

2Nl212

TR

npn,PL,si

3000

3

17S

.025 . 30

.2

3000

3

17S

.025

100 .2

3000

8S

17S

.485

60

s

Hl26

2Nl620

TR

npn,PL,si

2NS45

TR npn,PL,si

2NS46

TR npn,PL,si

2NS47

TR

pnp,PL,si

2N548

TR npn,PL,si

3000

60

175

.40

4000

s

175

.045

4000

s

17S

.04S

4000

s

175

.04S

4000

s

175

.04S

*100 5

60

.8

30

.8

60

.8

30

.8

*200

.03

*20-80

.015

*20-80

.OlS

*20-80

.OlS

*12-36

-

*15-7S

10

*lS-80-

.015

*15-80

.015

*20-80

.015

*20-80

.015

-

3

-

s

CDC, STC, SSP

-

s

CDC,STC

2

s

SSP

5

-

STC, Tl

-

53

-

5

SSP, Tl

-

5

SSP, Tl

-

5

CDC, STC, SSP, Tl

-

s

CDC, STC, SSP, Tl

2NS49

TR npn,PL,si

2N5SO

TR npn,PL,si

2Nlll7

TR

npn,PL,si

2N3713

MO

npn,si

2N3715

MO

npn, si

HL 27

2N3716

MO

npn ,si

2N3740

MO

pnp,si

2N37 41

MO

pnp, si

2N 1116

TR

npn,PL,si

2N3738

MO

npn,si

4000

s

17S

.04S

4000

s

17S

.04S

4000

s

175

.045

*4000 150

200

.857

*4000 150 200

.8S7

*4000 150 200

.8S7

*4000 2S

200

.143

*4000 25

200

.143

6000

5

175

.045

*15,000 20

175

.133

60

.8

30

.8

60

.8

60

10

60

10

*20-80

.015

*20-80

.OlS

*40-lSO

.015

*25-90

tl. 0

*SO-lSO

tl.O

80

10

*S0-150

tLO

60

1

*30-100

0.1

80

1

*30-100

0.1

60

.8

*40- lSO

.OlS

22S

.2SO

*40-200

0.1

-

s

-

-

4

5

1.0 3

1. 0 3

1.0 3

0.6 66

0. 6 66

s n

s 66

CDC, STC, SSP, Tl CDC, STC, Tl STC, CDC, SSP, Tl
STC, CDC, SSP, Tl

HL28

2N3739 2N3766 2N3767 2N 1983 2N 1984
2N 1985 2N698
2N28S2 2N28S6

MO

npn ,si

MO

npn,si

MO npn ,si

FA npn,DD,si

FA npn,DD,si

FA npn,DP,si FA npn,OP,si

SSP npn,PE,si SSP npn,PE,si

*15,000 20

17S

.133

*lS, 000 20

17S

.133

*lS,000 20

17S

.133

*30000 2

lSO

0.016

*30000 2

150

0.016

300 .250

60

1

80

1

25 -

25

-

*40-200

0.1

*40 -160

0.1

*40-160

0.1

100

0.001

80

0.001

*30000 2

lSO

0.016

2S

-

60

0.001

*40000 3

200

0.0172 60

-

*4 0

-

*40000 s

200

o.oos

*100 s

*45

0.001

*40000 s

200

o.oos

*60 5

45

0.001

2. s 66 2.5 66
2.S 66 0.25 5 0.25 s

0.2S s

-

s

0.2 s 0.2 s

TRWS, CDC, AMP . AL TRWS, CDC, AMP, AL
TRWS, CDC, AMP, AL TRWS, TR, GI, AMP, CDC Tl Tl

(see pages 4-9 for explanation of company abbreviations.)

May 17, 1966

89

High-Level (continued)

MAX. RATINGS

CHARACTERISTICS

Cross

Index Type

Key

Ho.

Mfr.

Type

fae

VcEO

*fy

p c

(kHzl (W)

T;

*Ycso le

(oC) W/ °C

(V)

(A)

hfe *hFE

1co *1cEO
t ic Ex (mA)

v ce(sat)

Package Outline

(V) (TO-)

Remarks

2N 1899
2Nl901 2N 1902

TRWS npn,PL,si TRWS npn,PL,si TRWS npn,PL,si

*50000 125 150

1

*50000 m 150

1

*50000 125 150

1

*140 10

*10-30

10

*140 10

*20-60

10

*140 10

* 10-30

IQ

1.0 -
1.0 1.0 -

2N 1904

TRWS npn,PL,si

*50000 125 150

1

*140 10

*20-60

10

1.0

-

2N 1978

FA npn,DP,si

*50000 30

200

0.172

*60 -

*30

0.001

1.0 -

HL 29

2N 1986

FA npn,DD,si

*50000 2

150

0.016

25 -

150

0.001

0.4

5

TRWS, CDC, GI

AMP, AL

·

2N 1987

FA npn,DD,si

*50000 2

150

0.016

25

-

50

0.001

0.4 5

TRWS, CDC, GI ,

2N 1988

FA npn,DD,si

*50000 2

150

0.016

45 -

*75

AMP,AL

0.001

1.5 5

TRWS, CDC, GI , AL

HL30

2N 1989 2N 1991 2N3076
2N717
2N719 2N719A
2N720A

FA npn,DD,si FA pnp,DD,si TRWS npn,PL,si
FA npn,DD,s i
FA npn,DD,si FA npn,DP ,si
FA npn ,DP,si

*50000 2

150

*50000 2

150

*50000 125 150

*60000 1.5 175

*60000 1.5 175 *60000 1.8 200
*60000 1.8 200

0.016 0.016 1
0.010
0.010 0.0103
0.0103

45

-

*30 -

*140 10

*60 -

*120 *120 *120 -

*4 0 *30 *30·90
*40
*40 *40
*80

0.001 0.001 25
.00001
0.001 .000005
.000005

1.5 5

1.2

5

1.0 *

0.7

18

2.5

18

0.8

18

0.9

18

TRWS, CDC, GI, AL TRWS, KSC, TR , MO Single Ended *MT-38 Case TRWS, CDC. TR. GI AMP, NA
TRWS, CDC, TR. GI TRWS, CDC, AMP, AL, GI, TR TRWS, CDC, GI, AMP, AL, NA, TR, RCA

2N721

FA pnp,DD,si

*60000 1.5 175

0.010

35

-

*60

2N909

FA npn,DD,si

*60000 1.5 175

0.010

*60 -

*250

2N912

FA npn,DP,si

*60000 1.8 200

0.0103 60

-

45

2N978

FA pnp,DD,si

*60000 1.25 150

0.010

20

-

*30

2N2850

SSP npn,PE,si

*60000 5

200

0.005

*100 5

*85

0.001 .00001 .000005 .001 -

1.0

18

0.3

18

0.16 18

1.3 18

0.15 5

KSC, TR TRWS, AMP TRWS, AMP, AL
TR

HL 31 2N2851

SSP npn,PE,si

*60000 5

200

0.005

*100 5

*85

-

0.2

5

2N2853

SSP npn,PE,si

*60000 5

200

0.005

*60 5

*85

0,001

1.0 5

2N2855

SSP npn,PE,si

*60000 5

200

0.005

60

5

85

0.001

0.2

5

2N 1972

FA npn,DD,si

*60000 2

175

0.010

*60 -

*250

.0001

0.4 5

AMP, TR, TRWS

2N 1975

FA npn,DP,si

*60000 3

200

0. 0172

60

-

45

. 00005

0.16 5

TRWS, CDC, AMP.

HL 32

2N3117 2N3719 2N3720 2N3879 2N911
2Nll31 2N 1974 2N696
2N699

FA npn,DP,si

MO

pnp, AE, si

MO

pnp,AE, si

RCA npn, si

FA npn,DP,si

F/..

~" ~.CD,s:

FA npn,DP,si

FA npn, DD,si

FA npn,DD,si

*60000 1.2 200

*60,000 6

200

*60,000 6

200

*60,000 35

200

*70000 1.8 200

*70000 2

175

*70000 3

200

*80000 2

175

*80000 2

175

0.00685 60

. 034

40

. 034

60

0.2

75

0.0103 60

-
3 3 10 (peak) -

*300 *25 -180 *25-180 *20-80
70

0.0133

35

600

*30

0.0172 60

-

70

0.0133 *60 -

*40

0.0133 *120 -

*80

.00001 .01 .01 *5 .00005
0.001 .000005 .00001
.00001

0.3

18

0.75 5

0.75 5

1.2 66

0.13 18

1.0 5

0.13 5

-

5

-

5

UC
TRWS, AMP , AL
KSC, TR. MO TRWS, CDC, AMP TRWS, TR, GI, AMP CDC, NA TRWS, SY, TR, CDC AMP, NA, RCA

2N718

FA npn ,DD,si

*80000 1.5 175

0.010

*60 -

*75

2N718A

FA

npn,DP,si

*80000 1.8 200

0.0103 *75 -

*80

HL 33 2N720

FA npn,DD,si

*80000 1.5 175

0.010

*120 -

*80

2N870

FA npn,DP,si

"80000 1.8 200

0.0103 60

-

*75

2N910

FA npn, DP,si

*80000 1.8 200

0.0103 60

-

140

2N 1252

FA npn,DD,si

*80000 2

175

0.0133 *30 -

*35

.00001

0.7

18

.0000003 0.6

18

.001
.00004 .00005 .0001

2.5

18

0.6

18

-0.13 18

0.6

5

TRWS, CDC, SY, TR GI, AMP, AL, NA, MO CDC, MO, TR, GI, AMP, AL, NA, RCA, MO, TRWS
TRWS, CDC, TR, GI AMP, AL, NA Gt, AMP, AL TRWS, AMP, AL SY, AL , NA

2Nl613

FA npn,DP,si

*80000 3

200

0.0172 *75 -

*80

2N 1973

FA npn,DP,si

*80000 3

200

0.00456 60

-

140

2N2849

SSP npn. PE.si

*80000 5

200

0.005

*100 5

*150

2N2854

SSP npn,PE,si

*80000 5

200

0.005

*60 5

*150

HL 34

2N3919

FA npn,DPE,si

80000 15

150

.200

60

2

*40

2N3920

FA npn,DPE,si

80000 15

150

.200

60

2

*100

2N3108

FA npn,DP,si

*86000 5

200

0.0286 60

-

*70

2N3110

FA npn ,DP,si

*86000 5

200

0.0286 40

-

*70

2N722

FA pnp, DD,si

*90000 1.5 175

0.010

35

.00001 *50

.00003
.0005
-
0.001
-
-
.0004 .0004 .001

0.6 5

0.13 5

0.2 5

0.2

5

.6

3

.6

3

0.16 5

0.16 5

1.0 18

TRWS, CDC, MO. TR. AMP, RCA TRWS, CDC, AMP,
KSC, MO, TR

HL35

2N 1132 2N 1838 2N 1839 2N 1840 2N871
2N 1420
2N 1711

FA pnp,DD,si TRWS npn,PL,si TRWS npn,PL,si TRWS npn,PL,si FA npn,DP,si
FA npn,DD,si
FA npn,DP,si

*90000 2

175

*90000 2

175

*90000 2

175

*90000 2

175

*100000 1.8 200

*100000 2

175

*100000 3

200

0.0133 35

0.6

.013

*45 0.50

.013

*45 0.50

013

*25 0.50

0.0103

60 -

0.0133 *60 -

0.0172 ·75 -

*45 *40· 150 *12-50 *10·100 *130
*200
*130

.00001 .0015 .0015 0.30 .0004
.00001
.00003

1.0 5

1.4 5

1.4

Q

1.4 5

0.35 18

0.7 5

0.5 5

KSC, TR,MO CDC CDC CDC CDC , GI, AMP . AL
TRWS, CDC, MO, TR GI, NA, AMP TRWS, CDC, MO, AMP, GI, AL , TR, NA RCA

(see pages 4-9 for explanation of company abbreviations.)

90

ELECTRONIC DESIGN

High- Level <continued)

MAX. RATINGS

CHARACTERISTICS

Cross

Index Type

Key

Ho.

Mir.

Type

1ae

*f1

p c

(kH:r.) (W)

T.
J

VCEO

*Ycso

I. c

(oC) W/ °C

(V) (A)

hie *hFE

1co *1cEo tic EX (mA)

v ce(sat)

Package Outline

(V) (TO-)

Remarks

2Nl893A TRWS npn,PL,si

*100000 3

200

."017

80

0.50

*40-120

.0001

2.0 5

GI, TR, NA

2N3053 2N 1253

RCA npn, si FA npn,DD,si

*100, 000 5 *110000 2

200

0. 0286 40

0. 7

175

0.0133 *30 -

*50·250 *45

0. 00025 1.4 5

.0001

0.6 5

AL,NA

2N219A GE npn,PE,si

*130000 2.8 200

.016

40

1

*100-300 1

.25 5

GI, NA, CDC, FA, MO,

·

HL 36

AL

2N21.93A GE npn,PE,si

*130000 2.8 200

.o~

50

1

*40· 120

10

.25 5

CDC, GI, NA, MO, AL

2N2194A GE npn,PE,si

*130000 2.8 200

.016

40

1

*2~0

1

.25 5

CDC, Gl NA . FA

MO.AL

2N2195A GE npn,PE,si

*130000 2.8 200

.016

25

1

*20

10

.25 5

CDC, GI, MO, AL

2N2243A GE npn,PE,si

*130000 2.8 200

0.16

80

1

*40· 120

i

.25 5

GI, NA

- 2N2350A GE npn,PE,si

*130000 5

200

2N2351A GE npn ,PE,si

*130000 5

200

2N2352A GE npn,PE,si

*130000 5

200

2N2353A GE npn,PE,si

*130000 5

200

2N2364A GE npn,PE,si

*130000 5

200

HL 37 2N 1837

TRWS npn,PL,si

*140000 2

175

2N3763

MO

pnp, AE,si

*150,000 4

200

2N3765

MO

pnp, AE,si

*150,000 2

200

2N3762

MO

pnp, AE, si

*180,000 4

200

2N3764

MO

pnp,AE, si

*180,000 2

200

HL 38

BF140 BF155 2N947 2N3502 2N3503
2N3505 2N915

NUC npn,si NUC npn,si FA npn,DP,si FA pnp, PE, si FA pnp, PE, si
FA pnp, PE, si FA npn,DP ,si

*180 MHz 1

-

180 MHz 1

-

*250000 1.2 200

*250, 000 3. 0 200

*250, 000 3.0 200

*250, 000 1.3 200 *300000 1.2 200

BSY18 BSY63

SA

npn,EP,PL,si *300,000 1.0 200

SA

npn,EP,PL,si *300,000 1. 0 200

2N3512 2N708

RCA npn, EP, si FA npn,DP,si

375, 000 4

200

*400000 1.2 200

2N916

FA npn,DP,si

*400000 1.2 200

2N3299

FA

npn, PE, si

*400, 000 3.0 200

HL 39

2N3300

FA

npn, PE, si

*400, 000 3. 0 200

2N3301

FA

npn, PE, si

2N3302

FA

npn, PE,si

*400, 000 1. 8 200 *400, 000 1.8 200

BSY34 BSY58

SA

npn, EP,PL,si *400,000 2.6 200

SA

npn,EP,PL,si *400,000 2. 6 200

.0285 .0285 .0285 .0285 .0285
.013 .023 .011 .023 .Oll
--
0.0069 0.017 0.017
0. 0023 0.0069
0.007 0. 007
-
0.0069
0.0069 0.017
0. 017 0.010 0.010 0.016 0.016

25

1

50

1

40

1

25

1

80

1

*80 0.50

60

1.5

60

1.5

40

1.5

40

1.5

*135 *155 *20 0.1 60 .600 60 0.6

45

0.6

50

-

12

0. 2

*40 0.2

*60 -

15

-

25

-

*30 -

*30 -

*30 -

*30 -

40

0.6

25

0.6

*20

1

*40-120

1

*20-60

1

*20

1

*40· 125

1

25

46

25

46

.25 46

25

46

.25 46

*40-120 *20-80 *20-80 *30 -120 *30 -120
*40 *40 *40 *70 *70
*70 *100

.0005 t.0001 t.0001 t.0001 t.0001

0.8 5

0.1 5

0.1 46

0.1

5

0.1 46

0.001

-

5

0.001

-

5

.0001

0.3

18

0. 05

o. 5 5

0. 00000007 0. 5 5

I

0. 00000007 0. 5 18

.0005

0.8 18

*40 .. .120 0.000025 0.25 18 30... 120 0.000025 0.4 18

80

0. 5

0. 28 5

*50

.0004

0.3 18

*100

.0005

0.4 18

*75

0, 0000002 0. 4 5

I

*220 *75

0. 0000002 0. 0002

0o..44

5 18

*220

0, 0002

0.4 18

42

0.00001 0.3 5

*42

0.00012 0. 3 5

NA NA NA NA, CDC CDC
Tl Tl Tl TRWS, AMP, NA, MO, AL
SY, TR, GI, AMP RCA, MO, FA, NA TRWS, AMP , NA, MO

HL 40 HL 41

2N2368 2N3209 2N2455 2N3423 2N2369
2N3303 2N917 2N418 2N420 2N420A
2N424A 2N637 2N637 A 2N637B 2N638
2N638A 2N638B 2N656 2N657

FA npn,PE,si

FA npn,PE,si

SY

npn,EP,ge

FA npn, PE, si

FA npn,PE, si

FA npn,PE,si FA npn,DP ,si BE pnp,ge BE pnp,ge BE pnp,ge

STC npn BE pnp,ge BE pnp,ge BE pnp,ge BE -

BE -

BE -

Tl

npn,si

Tl

npn,si

*550000 1.2 200
*550000 1.2 200 600,000 150 100 *600, 000 1.2 200 *650000 1.2 200

*650000 3.0 200

*800000 0.3 200

-

25

100

-

25

100

-

25

100

-

85

200

-

25

100

-

25

100

-

25

100

-

-

-

-

-

-

-

-

-

-

4

200

-

4

200

0.0685 15

0.00685 20

-

*15

0. 29

15

0.00685 15

0.017

12

0.00171 ' 15

0.5

-

0.5

-

0.5

-

.483

80

05

*25

0.5

*60

0.5

*60

-

-

-

-

-

-

0.0228 60

0.0228 100

0.5 0.0002 200 .050 0.5
1.0
-
5 5 5
3 5 5 5 -
-

*40 *75 *20·100 *20·200 *80
*60 50 *40 *40 *40
* 12-60 *30·60 30-CO *30·60
-
*30 *30

.0001 .00002 2.0 0. 000010 .0001
0.1 .00005 1.0 -
-
0.5 2·5 2·5
-
-
0.010 0.010

0.2 18
0.07 18 .19 18
0. 4 -
0.2 18

0.18 -

0.4 18

-

3

-

3

-

3

-

53

.8-1.5 3

.5

3

.5

3

-

-

-

-

-

-

-

-

-

-

TR, AL, SPR
AL, NUC, SPR
MO AL, Tl, RCA, TRWS KSC, ITT ITT ITT
STC, TR, BE KSC KSC KSC KSC
KSC KSC TRWS, FA, TR, AMP, TRWS, FA, TR, AMP, CDC, STC , SSP

2N730

Tl

2N731

Tl

2Nl011

BE

2N 1038

Tl

2N 1039

Tl

HL 42

2N 1040

Tl

2N 1041

Tl

2N 1046

Tl

2N 1046A Tl

2N 10468 Tl

npn,si npn,si pnp,ge pnp,ge pnp,ge
pnp,ge pnp,ge pnp,ge pnp,ge pnp,ge

-

0.5 175

3.33

*60 1

*20

1

1.5

18

TR

-

0.5 175

3.33

*60 1

*40

1

1.5 18

TR

-

35

95

0.5

*80 5

*35·75

5

1.5 3

MO, ITT

-

20

100

0.267

*40 3

*20

0.125

0.25 -

SY

-

20

100

0.267

*60 3

*20

0.125

0.25 -

SY

-

20

100

0.267

*80 3

*20

-

20

100

0.267

*100 3

*20

-

30

100

0.400

50

12

*40

-

50

100

1.0

50

12

*40

-

50

100

1.0

50

12

*40

0.125

0.25 -

SY

0.125

0.25 -

SY

2.0

0.4 3

2.0

0.4 3

2.0

0.9 3

(see pages 4-9 for explanation of company abbreviations.)

May 17, 1966

91

High- Level <continued)

MAX. RATINGS

CHARACTERISTICS

Cross

Index Type

Key

No.

Mfr.

Type

fae

*fr

p c

T.
J

VCEO
*Vcso le

(kHz) (W)

(oC) W/ °C

(V)

(A)

hie *hFE

1co *1cEO tic EX (mA)

Pock age Vce(sot) Outline
(V) !TO-)

Remarks

2N 1073

BE

pnp,ge

-

ZN 1073A BE pnp,ge

-

2N 1073B BE pnp,ge

-

ZN 1Z08

TR

npn,PL,si

-

ZN.1209 TR npn,PL,si

-

60

110

0.833

*25 10

*Z0-60

15

60

110

0.833

*60 10

60

110

0.833

*100 10

*Z0-60 *Z0-60

20
zo

85

175

.485

60

5

*15

10

85

175

.485

45

5

*Z0-80

20

1

41

DE,MO

l

41

DE.MO

1

41

DE ,M O

5

-

STC , Tl

5

-

STC, Tl

HL 43

2N 1238

HU

pn p

-

1

160

-

15

-

20

-

-

-

·

I

ZN 1239

HU

pnp

ZN 1Z40

HU

pnp

-

1

160

-

15

-

40

-

--

-

l

160

-

35

-

20

-

-

-

I

ZN 1Z41

HU

pnp

-

1

160

-

35

-

40

-

-

-

ZN 1242

HU

pnp

-·

1

160

-

60

-

20

-

-

-

ZN 1Z43

HU

pnp

-

ZN 1Z44

HU

pnp

-

2N 1990

FA npn,DD,si

-

2N2285

BE

pnp,ge

-

HL 44

ZN2Z86

BE pnp,ge

-

2N2287

BE pnp,ge

-

2N2Z88

BE

pnp,ge

-

2N2Z89

BE

pnp,ge

-

2N2Z90

BE

pnp,ge

-

1

160

-

60

-

1
z

160 150

0.016

110 *100 1

100 110

1.25

30

25

100 110

1.25

60

25

100 110

1.25

80

25

60

110

0.833

*40 10

60

110

0.833

*80 10

60

110

0.833

*120 10

40 20 *30
*35-14 0
*35-140 *35-140 *20-60 *20-60 *20-60

0.00 1
5
5 5 5 5 5

-

-

-

-

0.4

5

-

3

-

3

-

3

-

3

-

3

-

3

TRWS, CDC, GI, AMP, AL, NUC

2N2291 ZN2Z9Z ZNZ293
ZN2294 ZN2295

BE pnp,ge BE pnp,ge BE npn,ge BE pnp,ge BE pnp,ge

HL 45 2N2Z96

BE pnp,ge

2N2359

BE

pnp,ge

ZN2358

BE pnp,ge

2N2357

BE pnp,ge

ZN2389

Tl

npn,si

-

60

110

0.833

30

10

50·200

5

-

60

110

0.833

50

10

50·200

5

-

60

110

0.833

70

10

50·200

5

-

60

110

0.833

30

10

50·200

1

-

60

110

0.833

50

10

50-200

1

-

60

110

0.833

70

10

50·ZOO

2

-

170 110

2

30

50

*30·90

50

-

170 110

2

60

50

*30·90

50

-

170 110

2

80

50

30-90

50

-

0.45 200

0.00257 *75 500

35

10

-

3

-

3

-

3

-

41

-

41

-

41

-

41

-

41

-

-

1.5

50

ZN2390

Tl

ZN2394

Tl

2NZ395

Tl

2N2410

Tl

ZNZ411

Tl

HL 46

ZN2526

MO

ZNZ527

MO

2NZ528

MO

DTGl 110 DE

npn,si

-

pnp,si

-

npn,si

-

npn,si

-

pnp,si

-

pnp,AD,ge

-

pnp,AD,ge

-

pnp,AD,ge

-

pnp,PADT,ge -

0.45 200

0.00257 *75 0.5

*100

10

0.45 175

0.003

35

0.3

30

1

0.45 200

0.00257 40

0.3

*20

10

0.8 200

0.00457 30

0.8

*30

0.3

0.3 200

0.00172 20

0.1

*20

10

85

110

1.25

80

10

Z0--50

3

85

110

1.25

120 10

20-50

3

85

110

1.25

160 10

Z0-50

3

80

110

1. 0

*200 15

-

-

1.5 50

1.5 50

1.0

50

0.45 5

0.2

18

0.8 3 0. 8 3 0. 8 3 0.5 3

SY, NA DE

(see pages 4-9 for explanation of company abbreviations.)

92

ELECTRONIC DESIGN

CRYSTAL SUPPORTS:FRONT AND CENTER

When you stop to realize that the crystal support is a required part of any semiconductor, you'll realize that it's more than coincidence that the leading semi-conductor manufacturers specify Stackpole crystal supports rather than manufacturing their own.
You see, they know that a compatible coefficient of thermal expansion just isn't enough. They also need Stackpole's unique combination of good electrical conductivity,

excellent thermal conductivity, and a surface finish which assures wetability. And they depend on the flat surfaces which Stackpole features to give them maximum contact and conductivity between the base and crystal.
Get on this bandwagon ... let Stackpole supply your guest conductors, too. Phone, wire or write Stackpole Carbon Company, Carbon Division, St. Marys, Pa.

ON READER-SERVICE CARD CIRCLE 25

May 17, 1966

93

How, why and where to use FETs can be
determined by referring to their parameters. Here's a detailed look at the meaning of these characteristics and how to apply them.

What's so special about field-effects? How alike are the junction-FET and the metal-oxide semiconductor (MOS)? Where are they to be preferred over bipolar transistors? Which of their parameters indicate their suitability for specific applications?
In response to these questions, we have prepared a detailed examination which shows how to choose between different units in the FET family. It also offers guide lines for making the most effective use of field-effect devices in circuit design. It takes a long look at FE'T specifications, shows how and why they are measured and where each one is of prime importance. And finally, it explains the meaning of each parameter.
This parameter-oriented analysis of field-effects clarifies:
· What's unique about them and how they work;
· How to interpret and use the parameter specifications;
· Which parameters govern their small-signal behavior; and
· The difference in characteristics and applications of junction-FETs and ~OSs.
The basic properties of FETs
The field-effect transistor (FET) has a number of important attributes that set it apart from other active semiconductor devices: extremely high input resistance, nearly constant current-output characteristics, an almost completely unilateral gain function, a controllable temperature coefficient, and voltage-controlled resistance when operated at low drain-source voltages.
Many users think of the highly popular FET as a near-universal replacement for the vacuum tube. And indeed, its qualities are such that it does possess the de characteristics of the pentode vacuum tube (Fig. la). Present limitations, however, generally restrict FET use to circuits operating below 500 MHz and at power levels less than a few hundred milliwatts.
The FET is simplicity itself, consisting only of a conducting channel flanked by a pair of control electrodes (Fig. lb). Source and drain connections are made to either end of the channel, and a gate
James S. Sherwin, Senior Applications Engineer, Siliconix Inc., Sunnyvale, Calif.
94

connection is made to the control electrodes. The primary gate electrode may be a pn junction (junction-FE'T) or an insulated metal electrode . (MOSFET). The secondary gate electrode is a pn j unction in any case. A voltage applied between gate and source (or gate and drain) modulates the crosssectional area of the channel, thus controlling channel resistance.1·2
Very high power gain is a FET feature
The input resistance is that of a reverse-biased silicon pn junction (Si02 insulated-metal electrode in MOS devices), and is measured in gi-
gaohms ( >1012 ohms for MOS) at de. The FET
is a voltage- or field-controlled device exhibiting very high power gain at low frequencies. Because neither load nor signal current crosses the gatechannel junction, there is almost perfect inputoutput isolation and unilateral gain.
The closer you pare the differing FET properties, the more apparent becomes their suitability for various applications. Author Sherwin measures FET parameters on a MONITOR automatic FET /transistor test set.
ELECTRON'rC DESIGN

Test conditions (must Parameter be specified) Mean of specification

BVGss

IG Vns= O

BVons BVono

IG Vns=O
In ls= O

BVsoo
BVn ss BVnGs

Is ln=O
In VGs=O

BVnsx

In

VGs

Breakdown voltage from gate to channel. Drain and source are shorted, and a reverse bias is placed across the gate-channel junction. This is shown as the breakdown_ point where VC;s =
BVoss . (Fig. 3)
Identical to BVoss.

Breakdown voltage from gate to drain with source open. Under these conditions VGs =VoscoFF> due to self-biasing required to prevent current flow from drain to source.

Breakdown voltage from gate

to source with drain open.

V = V GD

GDCOFFl,

Breakdown from drain to source with Vas= O. This is normally specified for Type-C MOS devices. It represents breakdown from drain to substrate.

Breakdown from drain to
source with Vas =I= 0. Nor-
mally specified only for Type-
> 8 MOS devices when Vas
Vas<0FF>. It represents break-
down from drain to sub-
strate.

Test conditions (must Parameter be specified) Meaning of specification

loss

VGs

Gate-channel leakage with

Vns= O

Vns = 0. This represents

total gate leakage current at

a point below breakdown

voltage (Fig. 3) Specified at

112 to 1 times the minimum

specified BVass . When speci-

fied at min BVoss , lass may

replace the BVass specifica-

tion in that lass is <lo in the

BVass specification.

lnoo

Vno

Drain-to-gate leakage current

Is= 0

= with source open. As V1.s

VascoFF> for reasons indicated

under BVnao, las =!= 0. Then

- lnoo = Ion [at specified
+ Vno] los [at Vos = Vosc0F1·'>].

See Fig. 4 for a comparison

of IGss ' lnoo, ISGO, and lncOFF).

lnoo is representative of la un-

der worst probable operating

conditions when Vas

Vos<0FF> and Vno= maximum

allowable.

l soo

Vso

Source -to-gate leakage cur-

In = 0

rent with drain open. Note
+ that - lsao = b, at [Voe]

Ion at [Von = Von<OYI·') ].

lo

Vns or Vno Gate leakage current under

VGs

certain operating conditions.

lo is usually somewhat lower

than lnoo since lnoo is the

limiting case of IG.

-2.4

-2.0

v-

(

-1.6

i

~
loss

k-1.2

-.0.8

.-
V'

v,._,
-0.4

v

,~..

0

0

-5

-10

l
VGs=-0.2V
_L
I
VGs=O

1
TA= 25°C

+ 0 .2V

+0.4V +0.6V

+ 0 .8

+1.0V

+ 1.2V

+1.4V

+ l.6V . +l.8V

-15

-20

Vos(V)

-25

I -30
BVoGS

GATE (G)

DRAIN (0)

SOURCE (S)

s

G

0

1. FET output characteristics resemble those of the pentode (a). Construction (b) shows how voltage applied
May 17, 1966

between the gate and source terminals modulates channel resistance.
95

TABLE 1 FET Specification Parameters

Test conditions (must Pararneter be specified) Meaning of specification

IDs s
ID(QN) ID IDx I Dz IDCOFF) VGS COFF)

VDs VGs = 0
VDs or VDG VGs VDs or VDG Vas VDs or VDa Vas
VDs ID

Drain saturation current, the value of ID measured above
> the knee of the VDs·ID charac-
teristic curve, where VDs VP (Fig. 1). IDss is actually defined as ID· at the VDs required for channel pinch-off when the two gate-channeljunction depletion regions meet near the drain. 6 Vas must be zero. At this point ID is self-limiting, and any increase in VDs causes only slight increase in ID. 7 In Type-C MOS devices, IDss is essentially the drain-substrate leakage plus any residual drain-source channel current.

Drain current under specified bias conditions. Specified for Type-8 and Type-C MOS devices as a max intended operating drain current when Vas is biased for max channel conduction.

Drain-source current under certain specified operating conditions. Same as ID but a particular set of operating conditions is implied.

Same as IDx but often used to denote drain current for zero temperatµre-coefficient operation.

> Drain-gate leakage current

with Vas

Vas<OFF) . This

represents the drain current

observed in · an analog-gate

circuit which has been bi-

ased to the OFF state. IDcoFF>

is slightly lower than IDao

(Fig. 7a).

Gate cut-off voltage. Gatesou rce voltage required to cut-off channel current (Fig. 5b).

Pinch-off voltage, interchangeable with VascoFF> .

Test conditions (must Parameter be specified) Meaning of specification

VI'1, Va1scoFF> VDs ID Va2s = 0
VP2, Va2s coFF> VDs ID VG1S = 0

Gate 1 cut-off voltage for tetrodes.
Gate 2 cut-off voltage for tetrodes.

VGB(tb)

VDe

ID

Gate-threshold voltage. Gatesource voltage required to initiate channel conduction in Type-C MOS devices (Fig. 5b).

Vascr -t>

VDs IG Va2s = 0

Vasx Vasz

VDs ID VDs or VDa ID
VDs or VDa ID

IVas1-Vas2I VDo Is or ID

Gate-to-gate reach-through voltage. Found in tetrodes only. This is the point at which gate current flows from gate to gate. Measured with Va2s = 0, hence the subscript GS(r-t) rather than G1G2(r-t). Gate-source voltage at any given operating point.
Same as Vas but a particular set of op~rating conditions is implied.
Same as Vasx but often used to denote Vas for zero tem perature coefficient opera tion.
Magnitude of gate-to-gate differential offset voltage in differential (matched) pairs.

6. IVsa1·Vos2I VDa Is or ID

Change in IVGs1·Vas2I over given temperature range.

6. IVas1·Vas2I TAl & TA2 6. T

Incremental change in !Vost" Vas2I expressed in µV / ° C.

VD s Vas= 0

Match in IDss of differential pairs, expressed as a fraction.

VDs & Vas Vna or & ID
TA

Magnitude of match in la for differential pairs. Usually specified at an elevated temperature near 100 ° C.

rDSCON)

ID VDs &/or Vas

Static drain-source resistance when biased to full ON condition (maximum operating ID).

The output resistance is that of a current-

limited device when operating with drain-gate

voltages of more than a few volts, as shown by the

flat section of the output-characteristic curves in

Fig. la. Magnitude of output conductance ranges

from 1 to 100 flmhos, depending on device geome-

try. When operating at very low values of drain-

source voltage, the FET behaves as a voltage-con-

trolled resistor. The output-characteristic curves

drawn in Fig. 2a for a low value of applied Vvs

retain the same slope crossing through the origin.

Thus, r ds exhibits a bidirectional characteristic for

low Vvs values of either polarity.8

·

The temperature dependence of drain current is

the combined effect of a negative temperature

96

coefficient due to the majority carrier mobility and a positive temperature coefficient due to the change in gate-channel depletion-layer potential. (As the depletion region narrows with increasing temperature, thus increasing the channel cross-section, a positive temperature coefficient of drain current results). The two temperature-dependent effects tend to cancel and, at a specific value of I 0 or V as, a zero temperature coefficient exists. The effect is shown on the transfer curves of Fig. 2b. 4·5
Breaking the specification dilemma
Despite wide use of field-effect units, a number of their parameter specifications are still not
ELECTRONIC DESIGN

typified by biasing so that the .largest ac signal to

be amplified is small in comparison to the de bias

current and voltage. Equally interesting are the

response times and equivalent-noise parameters,

the most important of whiCh are presented in

Table 3.

·

- 2.8 r----r----.---..----.-----r-----..---,
- 2 .4 ~-_._----4---+----+-----+----+----i
:;(" -1.6
E 0

-0.4 0

VGS (OFF) ~OR Vp

0.4

0 .8

1.2

1.6

2.0 2.4

2.8

VGS (V)

@

2. A voltage-controlled-resistance property exists in FETs; it is bidirectional and is limited to the low-level region of Vos (a). A zero temperature coefficient, exhibited by most FETs, can be seen on the transfer curve (point 0 on b).

clearly understood. FET data sheet specifications may also seem confusing to some who have worked only with bipolar transistors. Since a proper grasp of the parameters is essential, those likely to be encountered will be explained. Table 1 contains both the definitions and the necessary test conditions.
Some of the parameters are self-explanatory; others be~ome clearer if a schematic or characteristic curve is provided (see Figs. 3-6. Note that leakage effects are included.6·7 ). The ~mall~signal characteristics of FETs and MOSs involve admittance, transconductance, capacitance and resistance terms (Table 2). FET operation here is
May 17, 1966

The distinction between FET and MOS
The MOS or insulated-gate FET differs from the junction-FET in that the primary gate of the MOS is a metal electrode electrically isolated from the channel by an oxide.8 This gives it -its name, metal-oxide-semiconductor (MOS) or insulatedgate field-effect transistor '(IGFET). The ·generalized structure of the MOS is shown in Fig. 7.
A p-type substrate is used for an n-channel MOS. Into the substrate are diffused two ·separate
N + regions: these become the source and drain
connections. Next, an oxide layer is grown over the entire surface. Holes are then etched through
the oxide layer over the N + regions. .·Finally, a
metal pattern is deposited on the surface allowing metal contact through to the source· and drain connections. The metal region over the oxide
spanning the two N + regions is the gate elec-
trode. There is no .conducting channel from source to drain.
This process produces a normally-OFF or enhancement-mode MOS, which will not conduct until a · positive control signal' is applied to the gate. Fig. 8 shows the effect of a positive gate potential applied with respect to the channel. Owing to the electrostatic field created, a redistribution of the minority carriers in the p-type . substrate occurs~ .
This results in the formation of an n-type resistive channel between source and drain. As the gate potential is increased, the channel carrier concentration and induced-channel depth increase to form a lower resistance channel. Thus, the electric field at the gate creates and controls the resistance of a conducting channel between source and drain. This device is now qeing described on data sheets as a Type-C Field-Effect Transistor, an enhancement-type device, according to EIA JEDEC type registration procedures. It may be conveniently described as a normally-OFF device.
A second type of MOS is the normally-ON or depletion-mode MOS (Fig. 9). This is similar to the device in Fig. 7 except that a conducting channel exists from source to drain in the absence of a gate voltage. A negative gate voltage depletes the .channel of carriers, and a positive gate voltage enhances the channel or increases the number of carriers. This device may therefore operate in eith~r the depletion or enhancement mode. Data sheets refer to this device as a Type-B, a depletio:µ unit intended for both enhancement"'.mode and depletion-mode operation.
The junction field-effect transistor (JFET or just plain FET) is referred to as Type-A, a depletion-type device only for depletion-mode operation. Operation of the three devices is made appar-
97

Table 2. Small Signal Characteristics of FETS

Test Conai-

Test Condi-

tions (must

tions (ml!st

Parameter be specified) Meaning of soecification

Parameter be specified) Meaning of specification

l~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~----:--1

Vas

Drain-to-source resistance

Same as g1 s·.

Vos = 0 or Is when biased to full ON con-

frequency dition (max operating lo).

go ss

Magnitude of common-source

Common-source output conductance with input shorted.

forward transfer admittance. Sometimes the magnitude

RE /Yoss/,

Real part of Yos s. Identically equal to goss . Sometimes

signs are omitted. Measured at Va s = 0, unless otherwise specified.
Magnitude of common-source forward transfer conductance. Sometimes the magnitude signs are omitt~d. This

gos Im/Yoss/

Vos & Vas Voa & lo Vgs= O frequency

used instead of goss .
Same as gos s.
Imaginary part of Yoss . OutPL!t susceptance boss . Identically equal to 1 / wCoss. Sometimes used in lieu of Coss.

is perhaps a more informative term than yr·. At 1kHz,

Common-source input capac-

Vos

itance, output shorted. Ci ··

Yts ~ gr·. However, at high frequencies yr. includes the effect of gate-drain capacity, hence may be misleadingly

Vas Vds=O
fr~quency

=Cdg+Cg·. (Fig. 6). Same as Ci .. if Vds=O. Same as Ci ··.

high. The term gr. should

Crss

be used for all high-frequen-

Vos

Rev e r s e transfer capacitance, input shorted.

Vos & Vas or

cy measurements.
Same as gr. but a particular set of operating conditions

Vos Vgs=O
frequency

Same as Crss.
Same as Crss, actual value of drain-gate capacitance.

Voa & lo

is implied.

gr s1

frequency Match in gr. for differential

gr s2

pairs. Expressed as a frac-

tion.

Values in equivalent circuit not

Actual value of gate-capacitance.
Actual value of drain-source

Match in gr sx for differential pairs.

measurable capacitance, es sent i a 11 y

directly.

header capacitance.

Same as gr sx but often used

Co BB

Common-source output ca-

to denote gr. when biased

pacitance, input shorted. Coss

for zero temperature coef-

Vos

=Crss+Cds. However, Cds is

ficient operation.

Vas

essentially header capaci-

Mutual conductance. Sometimes used in lieu of gr·.

Vgs=O frequency

tance. Same as Coss if Vgs= O.

Same as gm, but specifically

Same as Cos s.

at Vas = O.

Vos

Source-to-gate capacitance,

Common-source input admit-

Vas

gate and drain shorted. Csgs

tance with output shorted.

Vdg=O

= Cgs +Cds.

Important for high-frequency

frequ~ncy

operation.

Vos Vas Vds= O frequency

Common-source input conductance with output shorted. This must be specified tfioornshaigsh-gfr1e.sqcru. le/nwc2y. applica-

Cs go

Voa Vas or ls=O i.= 0 frequency

Dr a i n-to-gate capacitance

with source open. Cdgo= C· ~·

+

Cgs Ccts Cgs +Cds

>Crss, cut <Cd~··

Vas

Source-to-gate capacitance

Real part of y1 ... Identically equal to g1 ... Sometimes used instead of g1 ··.

Vos or lo = O with drain open. Csgo= Ci:,

id = O

Cctg Cct.

frequ~ncy + Ccti:+Cds > Cgs, but <Cs;,:s.

ent by the Type-A, -B, and -C gate-to-drain transfer characteristics (see Fig. 5b).
Gate control separates MOS from FET
Construction differences between the MOS and FET result in some fairly significant differences in electrical characteristics, including bidirectional gate control, gate current, breakdown paths, de stability and noise. Bidirectional gate control, already described, is graphed in Fig. 5b.
While FET gate input resistance decreases sharply when forward-biased more than a few tenths of a volt, the MOS gate may be biased to:
98

either polarity. As a result, lV{OS drain current is limited by dissipation and breakdown characteristics rather than by input-resistance considerations. The ON resistance of the depletion-type MOS may then be considerably decreased below that of the zero-bias state. Characterization of the MOS will include rds(onJ in an enhanced state at a given V as, where Inro NJ is also specified.
The Type-C enhancement-mode MOS is unique in the FET famiiy because it is normally in an OFF state. I nss is a very low value, similar to Io ronJ of Types A and B. A new term for Type-C devices only, gate-source threshold voltage V asrthh describes the gate voltage at which drain current
ELECTRONIC DESIGN

Table 3. FET Performance Parameters

Test conditions (must Parameter be specified) Mean _of specification

t.I c l ay(on ) tra11 tdelay(oft) trlae

Voo

Delay time- before furn on

locoN>

when pulsed from OFF to

VascoN>

ON condition.

Vos<OFF> Test circuit Pulse rate Input pulse
character-

Fall time when pulsed from OFF to ON condition.
Delay time before turn off when pulsed from ON to OFF

istics

condition.

Oscilloscope Rise time when pulsed from character- ON to OFF condition. istics

tra 11 +tdelay(on).

t r I s e +tde lay(oft).

Vos · Vos or lo frequency bandwidth

Common-source equivalent short-circuit input nois·e voltage. Measured at the output with the input shorted, and referred to the input. Expressed as rms volts per
root cycle, µVI vHz.. A function of. frequency, so frequency value must be stated.

Vos Vos or lo frequency bandwidth

Common-source equivalent open-circuit input noise cur-
rent. Expressed as pA/ \/Hz, a function of ·frequency.

NF

Vus

Noise figure. This represents

Vos or lu

a ratio between input signal

R gen era tor

to noise and output signal to

frequency noise. NF is a function both

bandwidth of frequency and of genera-

tor resistance Rs. Both must

be stated or the specification

is meaningless. When prop-

erly qualified, NF includes

the effects of both en and In.

begins to increase. Except for a translation along the V as axis, V asrt hJ is not unlike V asrofi'FJ in Types A and B. In fact, the difference between Type-B and Type-C devices is a simple translation of the transfer curve along the V as axis (see Fig. 5a).
Gate current of the MOS is predictably much less than that of the FET because of the insulating properties of the oxide layer. MOS and FET gate currents may be compared in much the same manner as the leakage of a ceramic dielectric capacitor may·be compared to the reverse current of a signal diode. Whereas FET gate current exhibits a significant temperature and voltage dependence, the de input resistance of the MOS gate is generally greater than 1012 ohms under all operating conditions.
A better understanding of breakdown
The voltage breakdown characteristics of the MOS differ markedly from those of the FET. The FE.T exhibits an avalanche breakdown a cr oss the most highly stressed point (draingate) of the gate-channel diode junction. In tetrode devices (junction FETs with two gates), there is also a reach-through breakdown from gate to gate when the channel becomes depleted of majority carriers at gate bias levels approaching the cut-off
May 17, 1966

1wzaa::
::> u
w
lei: C> I
.!?
T -10

2 -tI-+-
0

f--1

0 BVGSS

T

I

30

40

VGs -GATE VOLTAGE (V)

3. FET input gate characteristic shows the breakdown point where Vas ~ BVass (see Table 1).

Table 4. F~T and MOS applications Application
Ana log switch Digital switch General-purpose amplifier Low-noise amplifier High-frequency amplifier Differential amplifier Low-drift single-ended
amplifier

Preferred device

MOS

FET

x x

x

x

x

x x

x

:
x

voltage. Different values of reach-through voltage are observed on gaites 1 and 2, which are of unequal resistivity. It is important lo note that in tetrodes, where one gate (usually the substrate gate) has been internally connectect to the sourc~, it is impossible to measure I ass or BVass at voltage levels above the gate-1 reach-through value.
The MOS breakdown mechanisms are of a different nature. Take, for example, the enhancement of device. Breakdown from gate-to-source or gate-to-drain depends upon the thickness and quality of the insulating oxide. When the dielectric str~ngth of th~ oxide is exceeded, breakdown occurs, puncturing the insulating layer. The breakdown is destructive in nature because a virtual short circuit occurs at the puncture point. This type of breakdown is quite common in dry climates when adequate handling precautions are not observed. For instance, a static electric potential of several thousand volts may easily build up on the gate from contact with nylon smocks. The gate then becomes permanently damaged. To avoid this, some manufacturers supply units with built-in Zener protection or with shorting clips across the gate-to-source junction.
There is also a breakdown from source to drain
99

+

+

+

+
G) IGSS

@ IOGO

© ISGO

4. Leakage currents that flow in the FET are measured with these circuits (see Table 1).

© IO(OFF)

on the Type-C and Type-B units when either is biased to cut-off. In each case there is no channel connecting the source and drain which are isolated by the substrate. If the substrate is floating, two diodes appear back-to-back between source and drain. Drain-to-source breakdown (BVDss) occurs in either polarity across one or the other of
a these diodes. If Type-B device is under consideration, BVDss is usually replaced by BVnsx where the subscript X indicates some specific bias condition-Vas> V Gs roFFJ in this case. When the substrate is internally connected to the source, the breakdown takes place across the drain-substrate junction. A drain-source voltage greater than a f~w tenths of a volt of opposite polarity will cause forward conduction of the drain-substrate junction. This condition prevents use of the device in high-level, analog-switching circuits.
FET more stable than MOS
The de stability of the MOS is inferior to that of the FET.9 Whereas, with the FET, the equivalent drift of V Gs is a predictable and repeatable function of temperature, that of the MOS is dependent upon temperature and/ or V Gs history (recent past excursions). When a gate-channel voltage is applied to the MOS, there is a charge migration in the insulating oxide. When the bias is removed, the time required for restoration of equilibrium is a function of the bias applied, the length of time the bias had been applied, and the temperature both during biasing and after removal of bias.
As these relationships ._are complex, it is impossible to predict residual gate field conditions accurately. The effect of the disturbance in charge equilibrium is that a residual gate bias exists; this controls the channel as if a small but unknown gate voltage were present. The effect on drain current is that of an indeterminate translation of the gate-drain transfer-characteristic curve horizontally along the V Gs axis. High-voltage bias alone has some effect, but high-temperature
storage by itself has no effect except fo speed the
return to equilibrium. The variation in drain current from normal may be less than one per cent
100

after a period of low-voltage qiasing at room
temperature. It may rise to 30% after several
hours of 10-volt biasing at 100 °C. A specific bias point exists on FETs where the
drain current exhibits a zero temperature coefficient. Such a point also exists for the MOS, except that a true zero temperature coefficient is rarely, if ever, observed. In MOSs, a zero t.c. exists only for a much smaller range of temperature variation. Bias stability has been observed to be no better than t::..IVGsl 0 - ~ 10 m V for a variation of 75 ° C. This compares with t::.. IVGs l <0.5 mV over t::..T = 100 ° C for the FET.
The noise performance of the MOS is also inferior to that of the FET, except perhaps at VHF and above.10 A high level of excess noise is present at.low frequencies, and is believed to be due to the relatively unprotected nature of the MOS channel surface.
~OS forte is switching applications
From the preceding discussion of electrical characteristics, it is apparent that the MOS is well suited for some, but not all, circuit applications. Table 4 serves as a guide to suitable FET and MOS a·pplications. A listing in the table does not necessarily mean that the unlisted device is not suitable for the application, but that the listed device is preferred.
Several manufacturers have developed multiple MOS arrays in digital integrated circuits. They have been acclaimed as a means of reducing size, cost and power consumption of digital computers. The MOS is very well suited to switching applications because, as the control voltage varies to turn the device ON, a voltage clamp is not required to prevent gate current flow.
Considerable use of the MOS as an analog multiplexer gate may occur within the next few years. The capabilities of I DroFFJ less than 1 nA, rr1sronJ less than 100 n, and the normally-OFF advantage are all-important in this application. It is necessary in these analog gating circuits for the MOS substrate to be isolated from source and drain so that the V Ds may be of either polarity. Consider the analog gate circuit of Fig. lOa which uses a connected-substrate MOS. Note that if a
ELECTRONIC DESIGN

T TT
~F loss·-2.SmA

Vos·-5V

-Vp
MEASUREMENT

1so0 c
/

GATE-DRAIN AVALANCHE
Ir

-10-IO I

~OIOFFl MEASUREMENT

rn I~
··~

2

5

10

20

50

DEPLETION

1oss

5

41 3 0 NOT CHARACTERIZED

2

FOR OPERATION IN

THIS QUADRANT

TYPE A

-2 -1

OVGs I

2 3 45

DEPLETION

- lo(ON) - - - - -

TYPE 8

-3

+3

lo(ON)
lo ---=-=...+ - - - - - -

-3

5. Transfer characteristic (a) shows how key parameters Vp and ln r oFFJ are measured (see Table 1). This is for a Type-A FET unit (depletion mode). All three FET types

(depletion, depletion-enhancement (Type-8) and enhan.cement (Type-C) have unique transfer properties (b). Each governs device suitability for different applications.

GATE

Cdg=Crss

DRAIN

v;sl Cgs= Ciss-Crss

giss

o-------4--.,.____ _ __,,j~-.__

_.

Cds= Coss-Crss

SOURCE

6. The equivalent circuit of the FET is used in small-signal applications (see Table 2).

SOURCE

GATE
METAL OXIDE
N- TYPE CHANNEL

DRAIN

P SUBSTRATE
9. Depletion-type MOS is a normally-ON device. With zero gate potential, conducting channel from source to drain.

P-TYPE SUBSTRATE

P-TYPE SUBSTRATE

OXIDE

SUBSTRATE
©

SUBSTRATE
©

7. Starting with a p-type substrate (a), three additional steps are used in MOS construction.

INDUCED CHANNEL
P SUBSTRATE
8. An enhancement channel is formed in the MOS when a positive gate potential is applied.
May 17, 1966

negative input signal were present, the drainsubstrate junction would become forward-biased, allowing signals to appear at the output even in the absence of a gate drive. In the circuit of Fig. lOb, an MOS with isolated-substrate is used. Here the substrate is biased more negative than the largest signal to be handled, thus preventing drain-substrate conduction.
Another point of consideration in analog gate circuit design is the relationship between threshold voltage and signal voltage. With the gate at ground potential, a negative signal on the source is equivalent to a positive V 08· Then, if the MOS in Fig. lOb is in its normally-OFF state, the Vasrth; must exceed the maximum peak-signal level.
Low ON resistance a high· point
In digital switching applications, the MOS is the most promising device available. The desirable characteristics for this are low ON resistance, low capacitance, high switching speed, high input resistance, high threshold voltage, and a normally-OFF state. The Type-C MOS may be designed to meet all of these characteristics within reasonable limits. Low ON resistance increases switching speed and produces low VnsroN; values.
The latter term is equivalent ~xcept in magnitude to V cErsat; of bipolar transistors. Low
101

\ V --1 INPUT~UTPUT
10. The MOS is well suited for analog-switching. A connected-substrate unit is an analog gate (a) for basic multiplexing. The isolated-substrate version blocks output signals (b) when the input goes negative.
capacitance provides for increased switching speed. High input resistance yields a high fan-out capability. High threshold voltage produces good noise immunity. The normally-OFF state allows for simple direct-coupled operation with a single power supply. Combinations of normally-ON and normally-OFF MOS devices within a digital system are another intriguing possibility.
Tp.e MOS is not specifically suitable as a general-purpose amplifier because of the drain current instability with bias and temperature. In applications where ambient temperature is moderate and some drift in operating point is tolerable, the normally-ON MOS may be useful. Audio-frequency applications would be limited to medium and/ or high-level signals, owing to the large amount of excess noise exhibited by present MOS devices at low frequencies. Because of its relatively inferior noise performance, the MOS is ill-suited as a low-frequency, low-noise amplifier.
MOS is 0.K. for RF amplification
The MOS is also limited for use in de amplifier circuits because of the instability problem already noted. The only possibility at present for this application would be when the MOS is biased near the zero temperature coefficient point. This use is limited only to de amplifiers with moderate short-term drift performance requirements and a wide latitude on long-term drift performance. The instability restricts the MOS to laboratory uses allowing > 10-m V drift in V as and military applications allowing > 100-mV drift.
The MOS does, however, show promise for use as an RF amplifier, particularly where the squarelaw transfer characteristic produces very low levels of cross-modulation. The low input conductance of the MOS makes it suitable for efficient operation to several hundred megahertz. And, although low-frequency noise is excessive, highfrequency noise may be of a sufficiently low magnitude to permit uhf operation with noise figures below 5 dB.
FET applications are not exclusively limited to amplifiers. FETs are ideally suited to switching applications where the load resistance is high compared to channel resistance. The most important characteristics for each application are listed in Table 5. When referring to the FET tables (pp. 104 to 112), consult these key parameters. They are indices of the suitability of a device for a
102

Table 5. FET applications

Application

Characteristic Definition

Analog switch

rds(on) IDCOFF)
I cdgs C sgs
or
Cdgo I Csgo

Series ON resistance OFF leakage current
Gate-channel capacitance

Digital switch

rds(on) Vose th>
or
tVcoons)c+oFFtc>orn

ON resistance Control voltage threshold
Sum of rise, fall, and switch ing delay times

General- loss purpose gr. amplifier VoscoFF>

Drain current at zero gate
bias Transconductance at zero gate bias Gate cut-off voltage

Low-noise amplifier

Equivalent short-circuit input noise voltage
Equivalent open-circuit input noise current

NF

Noise figure for a given

source resistance

grs

Transconductance

High-fre- grs quency Crss amplifier
C ts s

Transconductance Reverse transfer capacitance, drain-to-gate Input conductance at intended operating frequency Input capacitance

Differential 6 IVos1- Vos2 I Differential input voltage

amplifier

6 T

drift with temperature

IVos1- Vos2 I llo1 -l 02I gr sx grs1/ grs2

Initial input offset voltage at
25 ° C Input current match at maximum operating temperature Transconductance under op-

erating conditions

Transconductance match un -

der operating conditions

Low-drift loz

single- grsz

ended

lo

amplifier Vosz

Zero temperature coefficient drain current Transconductance at loz Gate current at loz Gate-source voltage at loz

particular application.*

*A more detailed treatment of FET and MOS applications will be provided in a three-part follow-up des.ign article appearing in the next 3 issues of ELECTRONIC DESIGN.

References:

1. A. D. Evans, "Characteristics of Unipolar FieldEffect Transistors," Electr onic Industries, March, 1963,

p. 99. 2. John D. Tomkins, "FET Terminology and Parame-

ters," EDN, July, 1964, p. 48. 3. C. D. Todd, "FETs As Voltage Variable ReBistors,"

ELECTRONIC DESIGN, Sept. 13, 1965, p. 66.

4. L. J. Sevin, "Effect of Temperature on FET Characteristics," Electro-Technology, April, 1964, p . 103.

5. L. L. Evans, "Biasing FETs for Zero DC Drift,"

Electro-Techn ology, Aug., 1964, p. 93. 6. W . Shackley, "A Unipolar Field-Effect Transistor,"

Proc. IRE, Nov., 1952, p. 1365. 7. G'rosvaldt et al. , "Physical Phenomenon Responsible
for Saturation Current in Field-Effect DeviceB,'' Solid

State E'lectronics, J an.-Feb., 1963, p. 65. · 8. Herman and Hapstein, "Metal-Oxide Semiconductor
Field-Effect Transistor," Electronics, Nov. 30, 1964, p. 50.

9. Mitchell and Ditrick, "Stability Effects in MOS En-

hancement Transistors," Solid State Design, Nov., 1965,

p. 19.

.

10. Jordan and Jordan, "Theorv of Noise in MOS Devices." TEEE Tran sactions on Electron Devices, ED:-XII

No. 3 (M'arch, 1965), 142.

ELECTRONIC DESIGN

LESS DISTORTION WITH FETs
the best performance from DC to 500 MHz
Cross-mpdulation distortion in FM,· TV, and communications receiver r-f
stages is minimized by using devices with square-law transfer characteristics. A tube's power-law characteristic produces much less cross-modulation than the bipolar transistor with its exponential characteristic. The best answer of all is the FET, with its perfect square-law characteristic. Next time you're working on an. r-f design, plug in one of the Siliconix 2N3821-24 series and measure the remarkable improvement.
Harmonic distortion in low-frequency amplifiers comes from (A) a nonlinear
transfer characteristic and (8) input impedance variations .with signal level, resulting in nonlinear loading on the signal source. The latter problem is the major cause of distortion in bipolar transistor amplifiers lacking a constantcurrent drive. With the high input impedance FET the problem is eliminated. The curve shows that amplitude distortion increases as the FET's bias point is moved toward cutoff. The square-law transfer characteristic explains this effect.

The whole distortion story is much longer, so we'd like to mail it to you. Circle the number on the card and you'll receive the undistorted viewpoint on lowdistortion FETs.

H

Silicanix incorporated
140 W. Evelyn A venue · Sunnyvale , California 94086 Phone 245-1000 · Area Code 408 · TWX 408-737-9948

FRANCHISED DISTRIBUTORS
ALA., HUNTSVILLE, Tec-Sel, Inc ., 837-4541 · ARIZ., PHOENIX, Barnhill Associates , 959-2115 · CALIF., HOLLYWOOD , Hollywood Radio and Electronics 4648321 · LO.S ANGELES , Kierulff Electronics Inc., 685-5511 · MENLO PARK, Hollywood Radio and Electronics, 322-3431 ·SAN DIEGO , Kierulff Electronics fnc.' 2782112 ·SAN JOSE, Weatherbie Industrial Electronics. , Inc., 297-9550 · COLO., DENVER, Barnhill Associates, 934-5505 ·CONN., HAMDEN, Cramer Electronics Inc. 288-7771 · FLA., WEST PALM BEACH , Perrott Associates , Inc ., 585-8647 · WINTER PARK, Perrott Associates , Inc., 647-3038 · ILL, CHICAGO, Semiconductor Special i sts, Inc., 622-8860 · MD., BALTIMORE, Wholesale Radio Parts Co ., Inc., 685-2134 ·MASS., NEWTON, Cramer Electronics., Inc ., 969-7700 ·MICH., DEAR· BORN , Semiconductor Specialists, Inc. , 584-5901 · MINN., MINNEAPOLIS , Semiconductor Specialists, Inc ., 866-3435 · MO., ST. LOLI.IS , Semiconductor Specialists, Inc., 521-8866 · N. J., BERGENFIELD , Technical Electronics Distributors , Inc., 384-3643 · N. Y., BUFFALO, Summit Distributors, Inc:, 884-3'450 ·NEW YORK CITY, Milgray , 989-1600 · SYRACUSE, Eastern Semiconductor Sales, Inc ., 455-6641 · OHIO, DAYTON, Alpine Industries, Inc ., 278-586'1 .· Stmiconductor Specialists, Inc., 277-9784 · OKLA., TULSA, Oil Capital Electronics Corp ., 836-2541 · PA., PHILADELPHIA, Simco Electronics, Inc ., 299-1880 · PITTSBURGH , Semiconductor Specialists , Inc., 731-2050 ·YORK, Wholesale Radio Parts Co ., Inc ., 755-2891 ·TEX., DALLAS, Sterling Electronics, 351-9921 · HOUSTON , Lenert Company, 224-2663 ·WASH., SEATTLE, Garretson Radio Supply, Inc ., 682-8981 · WASH., D.C., HYATTSVILLE, MD., Milgray, 864-6330.
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ON READER-SERVICE CARD CIRCLE 27

Field-Effect

Type l(a). Analog-switching: Listed by descending order of rds{on)·

Cross Index Type

Key

Ho.

Mir.

Kl504

KMC

2N3610

GME

FET 1 2N3376

SI

2N3377

SI

C6692

CT

2N2497

Tl

2N3329

Tl

2N3460

AL

Dl\85

DIC

Dl303

DIC

FET 2

DNX9

DIC

TIXS!l

Tl

2N2498

Tl

2N3330 I Tl

2N3378

SI

2N3379

SI

2N3437

DIC

2N3459

DIC

C6690

CT

C6691

CT

FET 3

Dll84

DIC

D\302

DIC

DNX8

DIC

2N2499

Tl

2N3331

Tl

2N3380

SI

2N3381

SI

2N3631

SI

2N3436

DIC

2N3458

DIC

FET 4

D\183

DIC

D\301

DIC

DNX7

DIC

MlOO

SI

2N3382

SI

2N3383

SI.

· 2N3608

GME

2N3994

Tl

DE1004

GME

MIO!

SI

FET 5

' FI0049

FA

' 2N3824

Tl

UC401

UC

2N3966

AL

HA2010

HU

Ul39D

SI

2N3384

SI

2N3385

SI

2N3386

SI

2N3993

Tl

FET6

TIS05

Tl

2N3387

SI

Ul39

SI

UC451

UC

2N3972

SI

UC201

UC

2N4093

AL

CM600

CT

UC251

UC

TIXS42

Tl

FET 7

2N3971

SI

TIXS33

Tl

UC450

UC

2N4092

AL

CM601

CT

a.-el, Constructian, Class And Ho. of EIH1e11ts
p,M,4 p,M,4 p,DP,F,3 p,DP,F,3 n,EP,F,3
p,DP,F,3 p,DP,F,3 n,DPE,F,3 n,DPE,F,3 n,DPE,F,3
n,DPE,F,3 p,PL,M,3 p,DP,F,3 p,DP,F,3 p,DP,F,3
p,DP,F,3 n,DPE,F,3 n,DPE,F,3 n,EP,F,3 n,EP,F,3
n,DPE,F,3 n,DPE,F,3 n,DPE,F,3 p,DP,F,3 p,DP,.F,3
p,DP,F,3 p,DP,F,3 n,M,3 n,DPE,F,3 n,DPE,F,3
n,DPE, F,3 n,DPE,F,3 n,DPE,F,3 n,M,3 p,DP,F,3
p,DP,F,3 p,M,4 p,DP,F,3 p,M,4 n,M,3
p,DP,M,6 n,EP,F,3 p,F,3 n,DP,F3 p,M,4
p,DP,F,6 p,DP,F,3 p,DP,F, 3 p,DP,F,3 p,DP,F,3
p,DP,F,3 p,DP,F,3 p,DP,F,6 p,F,3 p,DPE,F, 3
n,F,3 n,DP,F, 3 n,EP,F,3 n,F,3 n,EP,F,3
n,DPE,F,3 n,EP,F,3 p,F,3 n,DP,F,3 n,EP,F,3

rds(an) I 1D(off) [Max.l [Mox.l (ohm) (µA)

cdgs or
*Csgs or
tCiss [Max.l (pf)

BVGSS
Of
*BVoss
[Min.l (volts)

VGS (off)
Of
*VGS(TH)
[Max.l (volts)

9fs [Min.-Max.l
(µmhos)

1css
or
*1oco
[max.] (nA)

loss [Min.-Miax.,
(.A)

Alternate Sources
and TO. Re111arks

10000 10

4.5

3000

-

0.6

1500

-.0004 3

1500

-.0004 2

1500

1.0

5

1000

0.01

-

1000

-

-

1000

-

6

1000

-

6

1000

-

6

1000

-

1000 0.01

6
-

800

0.01

-

800

-

-

750

-.0004 3

750

-.0004 2

700 700

--

6 6

700

1.0

5

7!X)

1.0

5

700

-

6

700

-

6

700

-

6

600

-

600

-

--

25

-8

*-20 *-7

30

5

30

5

25

6

--

15 5

50

2

40

2

25

2

50

2

30

*3-6

-

15

-

6

30

5

30

5

50

4

50

4

30

10

25

10

40

4

25

4

50

4

-

15

-

8

800 150 {min) . 800-2300 800-2300
-
1000-2000 1000-2000 1000-4500 1000-4500 1000-4500
1000-4500 800 {min) 1500-3000 1500-3000 150072300
1500-2300 1500-6000 1500-6000
-
-
1500-6000 1500-6000 1500-6000 2000-4000 2000-4000

0.05 0.0002 3 3 1.0
10 10
-
-
0.003 10 10 3
3 -
-
1.0 1.0
-
--
10 10

.05 0.00001 -{0.6-6.0) -{0.6-6.0)
-
1·3 1-3 0.2-1 0.2.1 0.2-1
0.2-1
-
2-6 2-6 -(3-6)
-{3-6) 0.8-4 0.8-4
-
0.8-4 0.8-4 0.8-4 0.5-15 5-15

18 18 72
- Flat pack
18

5 UC 72 UC 18 DIC,SI, UC
18
18

18 72 5 Sl,UC 72 72
- Flat pack
18 18 18 18

18

18

18 5

!

72

600

-.0005 3

600

-.0005 2

5.50

-.0001 1.6

450

-

6

450

-

6

450 450

--

6 6

450

-

6

350(typ) .001

-

300

-.002 6

300

-.002 5

300

-

3

300

1.2

-

300

-

3.5

300(typ) 1

t7.5

270 250

0.001 0.1

-OJ

250

.0001 4

220

0.001 1.5

200

1000

1

30

9.5

30

9.5

20

-6

50

8

50

8

40

8

25

8

50

8

20

-5

30

5

30

5

·-30 *-6

25

1-5.5

·-20 *-8

20

-8

30

-6

30

8

30

8

30

6.0

·-35 ·5

1500-2300 3 1500-2300 3
1400-2800 2500-10,000 -
2500-10,000 0.25

- 2500-10,000 -
2500-10,000
2500-10,000 1000-2200 -
4500-12,500 15

4500-12,500 15

800 {min)

0.002

4000-10,000 1.2

600 {min)

1000

1500-3300 -

2000 (min) -

-

0.1

-

0.1

-

0.1

1000-2000 0

-(3-20) -{3-20) 2-10 3-15 3-15

72
- Flat pack
18 18
18

3-15

18

3-15

18

3-15

18

1.5-4.5

18

-(3-30)

72

-(3-30)

- Flat pack

0.00003 {max) 5

2 (min)

72

0.0001

18

4-12

18

-1000
8 (min) 2 (min)
-

-
72 UC 72 18
72

200

-.002 6

180

.... 002 6

180

-.002 5

150

-;0025 6

150

1.2

-

20

10

30

5

30

5

30

9.5

25

4-9.5

5000 (min) 10
7500-12,500 15
7500-12,500 15 7500-15,000 15 6000-12,000 1.2

-(4-50) -{15-30) -{15-30) -{15-50) 10 (min)

5 Dual
-72 Flat pack
72 72

150

2

5

25

10

150

-.0025 5

30

9.5

150

-.0025 6

30

7

150

.00025 6

25

6

100

0.25

t25

40

-3

100

.00025 6

50

8

80

.00002 5.0

40

5.0

75

3.0

15

10

7

75

.001

6

30

6

70

5

-

25

10

60 60

.00025 1

-t25

40 30

-5 10

60

.00025 6

25

10

50

.00002 5.0

40

7.0

50

.003 . 15

15

10

?000-12,000 2

7500-15,000 15

7000 {min) 10

-

0.25

-

*0.25

-

0.25

-

0.2

10-30000

3

-

1

-

-

-

·0.25

12000 (min) -

-

0.25

-

0.2

10-30000

3

10-45 -(15-50) -(9-35) 3.75-37 .5 5·30
15 (min) 8 {min)
-
7.5-75 10 (min)
25-75 25 (min) 25-75
-15 (min)

72

- Flat pack
5 Dual

I

18 18

I

72 18 18 18 92

18
72 18 18
18

(see pages 4-9 for explanation of company abbreviations.)

104

ELECTRONIC DESIGN

Key to FET listings
Definitions of parameters used appear in the artide devoted to FET and MOS characteristics (pp. 94 to 102). In the column headed "Channel, construction, class and number of elements": channel refers top or n type; classes F and M signify junction-FET and MOS-FET, respectively; construction is indicated by an abbreviated form of the manufacturing process (see page 20 for key to symbols); and number of elements designates the number of accessible leads on the package, e.g., 3 for FETs, 4 for tetrode FETs or MOSs, etc.

Crass

Index Type

Key

Ho.

Mir.

CM602

CT

TIXS36

Tl

Ul82

SI

CM603

CT

2N4091

AL

FET 8

UC250

UC

TIXS41

Tl

2N2386

Tl

2N2500

Ti

2N3332

Tl

2N3796

MO

2N3797

MO

2N3819

Tl

2N3820

Tl

2N3821

Tl

FET9

2N3822

Tl

2N3823

Tl

2N3909

Tl

2N4220

MO

2N4221

MO

2N4222

MO

3Nl24

MO

3Nl25

MO

3Nl26

MO

MFE2093

MO

FET 10

MFE2094

MO

MFE2095

MO

TIS14

Tl

TIS 34

Tl

TIXS35

Tl

May 17, 1966

a.-el, Construction, Class And Ho. of Elell!ellts
n,EP,F,3 n,EP,F,4 n,DPE,F,3 n,EP,F,3 n,DP,F,3
n,F,3 n,EP,F,3 p,DP,F,3 p,DP,F,3 p,DP,F,3
n,DP ,M,4 n,DP,M,4 n,EP,F,3 p,PL,F,3 n,EP,F,3
n,EP,F,3 n,EP,F,3 p,PL,F,3 n,DP,F ,3 n,DP,F,3
n,DP,F,3 n,DP,F,3 n,DP,F,4 n,DP,F,4 n,DP , F,3
n,DP ,F,3 n,DP,F,3 n,EP,F,3 n,EP,F,3 n,EP,F,4

rds(on) [Max.l (ohias)
50 50 40 35 30
30 25
-
-
-
-
---
-
-
-
-
---
-

1D(off) [Max.l (µA)

cdgs or
* csgs or
t Ciss [Max.l (pf)

BVGSS
Of
*BVoss
[Min.l (volts)

VGS (off)
Of
*VGS(TH)
[Max.] (volts)

!Ifs [Min.-Max.]
(µmhos I

1css
:ir
*1oco
[max.l (nA)

1oss
[Min.-Max.l (Ill.A)

Alternate Sources
and TO. Remarks

3.0

15

-

-

.00025 t25

3.0

15

.00002 5.0

.001

6

0.5

-

0.01

-

-

-

-

-

-

0.8

-

0.8

-

-

-

-

-

-

-

-

-

-

-

-

-

2

-

2

-

2

-

2

-

2

-

2

-

2

-

2

-

2

-

-

-

-

-

-

30

10

30

10

40

-10

15

10

40

10

30

10

30

10

-

8

-

15

-

6

*25

-4

*25

-4

25

8

70

8

50

4

50

6

30

8

20

0.3-7 .9

-30

-4

-30

-6

-30

-8

-50

-2.5

-50

-4.0

-50

-6.5

-50

-2.5

-50

-4.5

-50

-5.5

30

6.5

30

1-8

30

1-5

10-30000

10

-

18

10,000-20,000 10

lll,000-

18

-

*0.25 50-150

18

20-60000

3

-

18

-

0.2

30 (min)

18

-

0.1

-

0.2

1000 (min) 10

1000-2200 10

1000-2200 10

50-150

18

50 (min)

18

-

5

1-6

5

1-6

72

900-1800

-0.001 0.5-3

18

1500-3000 -0.001 4-6

18

2000-6500 2

2-20

92

800-5000

20

0.3-15

92

1500-4500 ·o.i

0.5-2.5

72

3000-6500 0.1

2-10

72

3500-6500 0.5

1-7.5

72

1000-5000 10

0.3·15

72

1000-4000 -0.1

0.5-3

72

2000-5000

-0.1

2-6

72

2500-6000 -0.1

5·15

72

500·2000

-0.25 0.2·2

72

800-2400

-0.25 1.5-4.5

72

1200-3600 -0.25 3.0-9;0

72

250-500

-0.1 0.1-0.7

72

350-700

-0.1

0.4-1.4

72

400-800

-0.1

1-3

72

1000-7500 1

0.5-15

72

3500-6500 5

4-20

92

10,000-20,000 10

10-50

72

- ------1

(see pages 4 -9 for explanation of company abbreviations.)

105

Field-Effect rcontinued)

Type l(b). Digital-switching: Listed by descending order of VGs(TH>·

Cross

Index Type

Key

Ho.

FE.T 11

2N2497 2N2498 2N2499 2N2500 2N3970

FET 12

TIS05 TIXS33 TIXS41 TIXS42 2N2386
2N3331 2N3819 2N3820 2N3823 2N3824

FET 13

TIS14 2N3330 2N3332 2N3631 2N3329
2N3971 MlOl MlOO Ul82 2N3993

FET 14

2N3608 HA2000 2N3821 TIXS36 DE1004
2N4066 2N4067 2N4267 2N4 268 Fl-0049

Mfr.
Tl Tl Tl Tl UC
Tl Tl Tl Tl Tl
Tl Tl Tl Tl Tl
Tl Tl Tl SI Tl
UC SI SI SI Tl
GME HU Tl Tl GME
FA FA FA FA FA

a.a-1.
Construction, Class And
Ha.of Elements
p,DP,F ,3 p,DP,F,3 p,DP,F,3 p,DP,F,3 n,F,3
p,DP,F,3 n,EP,F,3 n,EP,F,3 n,EP,F,3 p,OP,F,3
p,DP,F,3 n,EP,F,3 p,PL,F,3 n,EP,F,3 n,EP,F,3
n,EP , F,3 p,DP,F,3 p,DP,F,3 n,M,4 p,DP,F,3
n,F,3 n,M,4 n,M,4 n,DPE,f , 3 p,OP,F,3
p,M,4 p,M ,4 n,EP,F,3 n,EP , F,4 p,M ,4
p,EP,M,6 p,EP,M,6 p,EP,M,4 p,EP,M,4 p,EP,M,6

Vcs(TH)
or
*Vp
[Min.-Max.1 (volts)
15 (max) 15 (max) 15 (max) 15 (max) 10 (max)
10 (max) 10 (max) 10 (max) 10 (max) 8 (max)
8 (max) 8 (max) 8 (max) 8 (max) 8 (max)
6.5 (max) 6 (max) 6 (max) ·-6(max) 5 (max)
5 (max) ·-B(max) ·-5(max) ·-(4-10) 4-9.5
-(4-6) 4.5 4 (max) 3-10 -(3-8)
3-6 3-6 3-6 3-6 3-6

rds (on) !Max.] ohms
1000 800 600
-
30
150 60 25 70
-
-6-00
-
250
-
800
-
550 1000
60 300 typ 350(typ) 40 150
300 200
-
50 300
500 250 250 125 500

1oss
[Min.-Max.l (mA)

1css *1oorco
[Max.1 (nA)

BYcss
or
*BVoss
or
tBYosx
[Min.] (volts)

1·3 2-6 5·15 1-6 50-150

10

-

10

-

10

-

10

-

0.25

40

10.45

2

25

25 (min)

-

30

50 (min)

0.2

8

-10 (min)

-
10

25
-

5·15

10

-

2·20

2

25

0.3-15

20

20

1-7.5

0.5

30

-

0.1

50

0.5-15

1

30

2-6

10

-

1-6

10

-

2·10

-

t20

1·3

10

-

25-75

0.25

40

4·12

-

t20

1.5-4.5

-

t20

50.150

*0.25

40

10 (min)

1.2

25

0.00003
-
0.5-2.5 40.200
0.0001

0.002

-30

-

·-35

0.1

50

10

30

1000

·-20

0.00 l

0.0025 30

0.001

0.0025 30

0.001 (max) 0.005

30

0.001 (max) 0.005

30

0.001 (max) 0.0025 j0

crss
[Max.] (pf)

ciss [Max.1 (pf)

1on + 'off
[Max.1 (µs)

-

32

-

-

32

-

-

32

-

-

32

-

6

25

50

-

12

-

5 18
9

20
-
18

-
18
-

-

50

-

-
4
16 2

20
8 32 6

----

3

6

-

4

8

-

-

20

-

-

20

-

1.6

7.5

-

-

20

-

6

25

90

--

7.5 7.5

--

6

25

50

4.5

16

-

-

-

-

1

8

0.003

3

6

-

5

12

-

3

10

-

1.5

7

0.01

1.5

7

0.01

3 3

15 15

--

0.7 (typ) 0.5(typ) -

Alternote Sources
and
TO. Remarks
5 5 5 5 18
72 72
92 5
72 92 92 72 72
72 72 72 18 72
18 18 18 18 72
5 72 72 72 18
76 76 72 72
-

Cross

Index Type

Key

Ho.

Mfr.

Oiannel, Construction,
Class And Ho. of Elements

Vcs(TH)
or
*Yp
[Min.-Max.1 (volts)

rds (on)
!Max.] ohms

1oss [Min .-Max. l
(mA)

1css *1oorco
[Max.l (nA)

BYcss
or
* BYoss
or
t BYosx
[Min .l (volts)

crss !Max.] (pf)

ciss
[Max.] (pf)

1on + 1off [Max.] (µs)

Alternate Sources
and
TO. Remarks

FET 15

TIXSll 2N3972 Fl-100 2N3971 2N3994
MM2103 TIXS35 TIS34 MM2102 2N3972

FET 16

2N3909 2N3824 2N4065 2N4120 2N42 20
2N4221 2N4222 3Nl24 3Nl 25 3Nl26

MFE2093

FET 17

MFE2094 MFE2095

Tl

p,PL ,M,4

UC

n,F,3

FA

p,EP,M,4

SI

n,DPE,F, 3

Tl

p,DP,F, 3

MO

p,OP ,M,4

Tl

n,EP,F,4

Tl

n,EP , F,3

MO

n,DP,M,3

SI

n,DPE,F ;3

Tl

p,PL,F,3

MO

n,DP,F ,3

FA

p,EP,M ,4

FA

p,EP ,M,4

MO

n,DP ,F,3

Md

n,DP,F,3

MO

n,DP,F,3

MO

n,DP , F,4

MO

n,DP , F,4

MO

n,DP,F,4

MO

n,DP,F,3

MO

n,DP,F ,3

MO

n,DP , F,3

3-6

250.1000

-

0.003

30

3

8

-

72

3 (max)

100

2.5-6.0

1000

5·30
-

0.25

40

6

0.0025 30

1.0

25 3.5

180
-

18 72

-2·5(Vp)

60

1·5.5

300

25-75

*0.25

40

6

2 (min)

1. 2

25

5

25

90

16

-

18 72

-(l.5-6)

600

1·5

-

1·8

-

1·4

200

·-(0.5-3)

100

0·0.005

0.010

· -25 2.5

6.5

0.15

72

10.50

10

30

5

4-20

5

30

2

12

-

6

-

72 92

0.Q.010

0.010

*25

1.5

4.5

0.15

72

5-30

*0. 25

40

6

25

180

18

--0.3·7.9

-
250 1500

--

1000
-

-----

-
-
-

---

-
-

0.3-15

10

20

16

32

-

72

-

-0.1

-50

3

6

-

72

0.0005(max) 0.0025 30

0.7

4.5

0.65

72

0.0005 (max) 0.0025 30

0.7

4.5

0.65

72

0.5·3

-0.1

-30

2

6

-

72

2-6

-0.1

-30

2

6

-

72

5·15

-0.1

-30

2

6

0.2·2.0

-0.25

-50

2.0

14

-

72 72

1.5-4.5

-0.25

-50

2.0

14

3.0.9.0

-0.25

-50

2.0

14

-
-

72 72

0.1.Q.7 0.4-1.4 l.0.3.0

-0.1

-50

2

-0.1

-50

2

-0.1

-50

2

6 6 6

--

72 72 72

(see pages 4-9 for explanation of company abbreviations.)

106

ELECTRONIC DESIGN:

Field-Effect (continued)

Type 2(a). Low-drift, single-ended de amplifiers: Listed by ascending order of lox·

Crass Index
Key FET 18
FET 19
FET 20
FET 21
FET 22 FET 23

Type Ho.
2N3112 2N3113 2N2606 2N2841 2N2607
2N2842 2N2608 MFE2093 2N2843 3Nl24
2N2609 2N3820 2N3909 2N2844 MFE2094
2N3969 2N3821 2N3796 2N4220 TISl4
2N2497 2N3329 MFE2095 2N3968 2N2500
2N3332 2N3823 3Nl25 2N3994 2N2498
2N3330 2N3797 2N4221 2N3822 2N3819
2N3967 3Nl26 TIS34 2N2499 2N3331
2N4222 3N98 TIXS35 3N99 TIXS36
2N2386 HA2020 TIXSll

ChoMtl,
Constructian,
Class And Mir. Ho. of Elements

SI

p,DP,F,3

SI

p,DP,F, 3

SI°

P.DP,F,3

SI

p,DP,F,3

SI

p,DP,F,3

SI

p,DP,F, 3

SI

p,DP,F, 3

MO

n,DP,F,3

SI

p,DP,F, 3

MO

n,DP,F,4

SI

p,DP,F,3

Tl

p,PL,F ,3

Tl

p,PL,F,3

SI

p,DP,F,3

MO

n,DP,F,3

AL

n,DP,F,3

Tl

n,EP,F,3

MO

n,DP,M,3

MO

n,DP, F,3

Tl

n,EP,F,3

Tl

p,DP,F,3

Tl

p,DP,F,3

MO

n,DP,F,3

AL

n,DP,F,3

Tl

p,DP,F,3

Tl

p,DP,F,3

Tl

n,EP,F,3

MO

n,DP,F,4

Tl

p,DP,F,3

Tl

p,DP,F,3

Tl

p,DP,F.,3

MO

n,DP,M,3

MO

n,DP,F,3

Tl

n,EP,F,3

Tl

n,EP,F ,3

AL

n,DP,F,3

MO

n,DP,F,4

Tl

n,EP,F,3

Tl

p,DP,F,3

Tl

p,DP,F,3

MO

n,DP,F,3

RCA n,DP,M, 4

Tl

n,EP,F,4

RCA n,DP,M,4

Tl

n,EP, F,4

Tl

p,DP,F,3

HU

p,M,4

Tl

p,PL,M,3

1ox
fMin.-Maii.l
(d)
.008(ttp) .008(typ) .01 (typ) .014 (typ) .03(typ)
.04(typ) .l(typ) 0.1-0.7 0.12(typ) 0.2-2
0.27(typ) 0.3-15 0.3·15 0.4(typ) 0.4-1.4
0.4-2.0 0.5-2.5 0.5-3 0.5-3 0.5-15
1-3 1-3 1.0-3.0 1.0-5.0 1-6
1-6 1-7.5 1.5-4.5 2 (min) 2-6
2-6 2-6 2-6 2·10 2-20
2.~10
3.9 4-20 5-15 5-15
5-15 7.7 (max) 10-50 10.5 40-200
---

9fsx [Min ..Max.1 (µmhos)
20 20(typ) 40(typ) 50(typ) 120(typ)
150(typ) 370(typ) 250-500 450(typ) 500-2000
1200(typ) 800-5000 1000-5000 1400(typ) 350-700
1300 (min) 1500-4500 900-1800 1000-4000 1000-7500
1000-2000 1000-2000 400-800 2000 (min) 1000-2200
1000-2200 3500-6500 800-2400 4000-10,000 1500-3000
1500-3000 1500-3000 2000-5000 3000-6500 2000-6500
2500 (min) 1200-3600 3500-6500 2000-4000 2000-4000
2500-6500 1000-3000 10,000-20,000 1000-4000 10,000-20,000
1000 (min) 1000-2000 800 (min)

1GX or
*1GSS
[Max .] (nA)
*0.05 *0.05 *l
-
*3
-
*10 -0.1 -0.25
*30 20 10
-
-0.1
0.1 0.1 -0.001 -0.1 1
10 10 -0.1 0.1 10
10 0.5 -0.25 1.2 . 10
10 -0.001 -0.1 0.1 2
0.1 -0.25 5 10 10
-0.1 0.05 10 0.05 10
10 0 0.003

BVGSS
or
·evoss
[Min.1 (volts)

VGSX
·vorp
[Min.-Max.1 (volts)

9osx [Max.1 {µnihos)

20

0.4-3.5 . -

20

0.4-3.5

-

30 30

0.4-3.5 1.2 (max)

--:-

30

0.4-3.5

-

30 30

- 1.2 (max) -
0.4-3.5

-50 -2·.5

1.5

30

1.2 (max) -

-50 -2.5

2

30

0.4-3.5

-

20

8 (max)

-

20

0.3-7.9

-

30

1.2 (max) -

-50

-4.5

3.0

30

·1.7 (typ) 5.0

50

4 (max)

-

*25

-4

25

-30 30

-4 6.5 (max)

10 -

.

--

15 (max) -

5 (max)

-

-50

-5.5

10

30

*3(typ) 15

-

15 (max) -

-

6 (max)

-

30

8 (max)

-

-50

-4.0

10

25

1-5.5

-

-

15 (max) -

-

6 (max)

-

·25

-4

60

-30

~

20

50

6 (max) -

25

8 (max)

-

30

*2.0-5.0 35

-50

~.5

20

30
-

1-8

-

15 (max) -

8 (max)

-

-30

-8

40

*32

6 (max)

200

30

1-5

-

*32

6 (max)

200

30

3-10

-

-

8 (max) -

*-35 80 (min) -

30

3-6

-

ciss
[Max.I (pf)

HF [Mox .] dBat(~
Rgen=-m TO.

Alternote Sources
and Remarks

2

-

3.5

-

6

-

-
18 18

6

3(1 / 10000)

10

-

18 18

10

3(1 / 10000)

18

17

-

18

6

-

72

17

3(1 / 1000)

18

14

-

72

30

-

32

-

18 92

32

-

72

30

3(1 I 1000)

6

-

18 72

5.0

1.5 (0.1 I 1000)

18

6

5(0.01, 1000)

72

7

-

6

-

18 72

8

-

72

32

-

20

3(1 / 1000)

lj

-

~.o I 1.5(0.1 I 1000)

l 32

-

I20

1(1 / 1000)

6

2.5(100000 / 1)

14

-

16 32

--

20

3-1-1000

8

-

6

-

6

5(0.01 I 1000)

8

-

5 72 72 18 5
72 72 72 72 5
72 18 72 72 MO 92

5.0

1.5(0.1 I 1000)

18

14

-

72

6 32

--

92 5

20

4(1 /1000)

72

6

-

72

7

7(1 I 1000)

12

-

72 72

, 7

7(1 / 1000)

72

12

-

72

50

-

5

8.0

2(5000 I .05)

72

8

-

72

Late-Arrivals. . .

The following silicon p-channel enhancement mode MOS-

FETs, manufactured by General Instrument, are general-

purpose ac amplifying units with characteristics similar

to cross-index group FET 41:

MEM 511

MEM 520

MEM 517

MEM 550

MEM 517A

MEM 551

MEM 5178

Use the literature offering and reader-service card (p. 5)

to obtain detailed information on the parameters of these

devices.

May 17, 1966

107

Field- Effect (continued)
Type 2(b). Differential de amplifiers: Listed by descending order of ~l~;j l

Cross Index Type

Channel, Construction,
Class And

~

BVcss

Vp

or

or

.1.ITI VGs1-VGs2 *8Voss "' VGS (off)

{Max.] [Mox .] [Min .] {Min .· Max.l

1css
or " 1GX [Mox .]

1oss 1G1. 1G2
[Min.-Max.l [MaJ1.]

9fsx [Min. ·Max.]

Alternate Sources
and

Key

H11.

Mfr .

Ha. of Elements (µvolts /"q (volts) (volts) (volts)

(nA)

(mA)

(nA)

{µmhos)

TO- Remarks

FET 24

2N3336 2N3335 TIS27 2N3334 TIS26

Tl

p,DP,F,6

Tl

p,DP,F,6

Tl

n,EP,F,6

Tl

p,DP,F,6

Tl

n,EP,F,6

520

0.050

20

0.3-1.6

10

0.3-1

200

280

0.040

20

0.3-1.6

10

0.3-1

100

210

0.015

50

6 (max)

0.25

0.5-8

10

200

0.020

20

0.3-1.6

10

0.3-1

50

140

0.010

50

6 (max)

0.25

0.5-8

10

600-1800 600-1800 1500-6000 600-1800 1500-6000

89

UC

89

UC

5

89

UC

5

2N3609 3N97 2N3958

GME p,M,4

SI

p,DP,F,6

UC

n,PL,F,6

110

OJ

·30 -

0.002

35

-

-

5

106

0.2

30

3.3

5

-0.5-2.5 3

250-500

5

100

0.025

50

1.0-4.5

0.0001

0.5-5.0

10

1000-3000

71

2N3333

Tl

p,OP,F,6

80

0.015

20

0.3-1.6

10

0.3-1

50

600-1800

89

2N3957 FET 25

UC

n,PL , F,6

75

0.020

50

1.0-4.5

0.1

0.5-5.0

10

1000-3000

71

TIS25

Tl

n,EP,F,6

70

0.005

50

6 (max)

0.25

0.5-8

10

1500-6000

5

SU2079

AL

n,F,6

60

0.015

50

4 (max)

0.25

0.25-2

-

300 (min)

18

SU2081 2N3935

AL

n,DP,F,6

AL

n,DP,F,6

60

0.015

50

0.005

50

4(typ)

0.5

50

3(typ)

OJ

1.0-10

-

0.25-1.3 -

1500 (min) 300 (min) .

18

18

UC

·

2N3956

UC

n,PL,F,6

50

0.015

50

1.0-4.5

OJ

0.5·5.0

10

1000-3000

71

FET 26

SU2078 SU2080 2N3922 2N3955 2N4083
2N4085 3N96 2N3921 2N3934 2N3954

AL

n,F ,6

AL

n,DP,F,6

AL

n,DP,F,6

UC

n,PL,F,6

AL

n,DP , F,6

AL

n,DP,F,6

SI

p,DP,F,6

AL

n,DP,F,6

AL

n,DP,F,6

UC

n,PL,F,6

35

0.015

35

0.015

25

0.005

25

0.010

25

0.015

25

0.015

13

OJ

10

0.005

10

0.005

10

0.005

50

4 (max)

0.25

50

4(typ)

0.5

0.25-2

-

1.0-10

-

50

3(typ)

0.25

1.0-10

-

50

1.0-4.5

0.0001

0.5-5.0

10

50

3(typ)

OJ

0.25-1.3 -

50

3(typ)

0.25

1.0-10

-

30

3.3 (typ) 5

-0.5-2.5 1.0

50

3(typ)

0.25

1.0-10

-

50

3(typ)

0.1

0.25-1.3 -

50

1.0-4.5

0.0001

0.5-5.0

10

300 (min) 1500 (min) 1500 (min) 1000-3000 300 (min)
1500 (min) 250-500 1500 (min) 300 (min) 1000-3000

18 18 18 71 18

18

5

18

UC

18

UC

71

2N4082 FET 27 2N4084
HA2030

AL _n,DP,F,6

AL

n,DP,F,6

HU

p,M,4

10

0.015

SQ

3(typ)

0.1

0.25-1.3 -

300 {min)

18

10

0.015

-

0.005

50 35

3.0(typ)
-

-0.25

1.0-10

-

0.000001 0

1500 (min) 1000-2000

18 72

Type 3(a). General-purpose ac amplifiers: Listed by ascending order of lnss·

Cross

Index Type

Key

Ho.

FET 28 FET 29 FET 30 FET 31

UC852 2N 2841 DNX3 2N4117 2N3112
2N3113 UC750 2N3068
2N3367
2N3454 2N3457 2N3698 Dll03
Dll79 DN3068A UC801 UC803 UC-41
UC-43 UC853 2N2842 2N4118 C680
C681 UC751 Ul285 2N2606
2N3687 Ull4 2N3071
2N3370

Channel, Construction,
Closs And Mfr. Ho. af Elements

UC

p, F,3

SI

p,DP,F,3

DIC

n,DPE , F,3

SI

p,DPE,F ,3

SI

p,DP,F ,3

SI

p,DP,F,3

UC

n,F,3

AL

n,DP,F,3

AL

n,DP,f ,3

AL

n,DP,F,3

AL

n,DP ,F,3

UC

p,F,3

DIC

n,DPE,F,3

DIC

n,DPE,F,3

DIC

n,DPE , F,3

UC

p,F ,3

UC

p,F ,3

UC

p,F ,3

UC

p,F,3

UC

p,F ,3

SI

p,DP ,F ,3

SI

p,DPE,F, 3

CT

n,F,3

CT

n,F,3

UC

n,F,3

AL

n,DP,F,3

SI

p,DPE,F,3

UC

n,F,3

SI

p,DP,F, 3

AL

n,F,3

AL

n,DP,F ,3

loss fMin.-Max.l
(mA)

9f,
[Min.-Max.l {µmhos)

0.025(min) -(.025-.12) 0.025-0.25 0.03..Q.09
-(.03~·.175)
-(.035-.175) Q.05(min) 0.05-0.25
0.05-0.25

60 60 (min) 200-700 60-170 50-115
50-115 120 200-1000
100-1000

0.05-0.25 0.05-0.25 0.05-0.25 0.05..Q.25
0.05-0.25 0.05-0.25 0.05-1.5 0.05-5.0 0.06-0.3
0.06-0.3 0.065(min) ·(.065·.325) 0.00-0.24 0.08·0.4
0.08-0.4 0.l(min) 0.1 (min) -(0.1-0.5)

100-600 150-600 250-750 200-1000
200-1000 200-1000 75-750 250-2500 100 (min)
100 (min) 180 180 (min) 80-220 200-500
200-500 350 200-1200 110-500

0.1-0.5 -(0.10-0.50) 0.1-0.6
0.1·0.6

500-1500 110 (min) 500-2500
300-2500

Vp or "VGS(off)
[Min.-Max.l (volts)

BVGSS or
*BVoss
or 1css t BVoco [Mox.1 [Min.] (nA) (volts)

ciss
[Mox.] (pf)

crss
[Mox.] (pf)

9oss [Mox .l (µmhos)

Alternate Sources
ond TO- Remarks

6 (max) 2

25

6

-

-

1.7 (max) l

-6

-

-

-2 (max) -1.0 50

-

-

-

-0.7·2

-0.01 40

3

1.5

3

1-4

0.05 20

3.5

-

-

1·4

0.05 -

2.0

-

-

6 (max)

2

30

6

-

-

2.5 (max) 1.0

t50 10

-

-

2.5 (max) 5

--

-

2.5

0.1

t50 6

-

-

2.5

0.04 t50 5

1.5

-

0.3-1.2

0.1

30

5

1.2

-

-2.5 (max) -10

25

-

-

-

-2.5 (max) -5.0 50

-

-

-

-2.5 (max) -1.0 50

10

1.5

5

6 (max)

0.2

25

3

-

6 (max)

0.5

25

6

-

1-2.5

0.01 30

1.4

-

---

1-2.5

0.01 30

1.4

-

-

6 (max)

4

25

10

-

-

1.7 (max) 3

30

10

-

-

-1.0-3.5 -0.0 40

3

1.5

5

0.5·2.5

1.0

30

5

2

-

0.5-2.5

1.0

30

5

2

6 (max)

2

30

10

-

8.0 (max) 5.0

t30 -

-

---

4 (max)

1.0

-40 6

-

-

0.3-1.2

0.1

50

4.0

1.2

-

1-4

1

30

6

-

-

2.5 (max) 1.0

t 50 15

1.5

-

3.5 (max) 5.0

t 40 -

-

-

18 18 UC 18 72 72
- Flat pack 18 18 DIC,UC ,
SI 18 DIC, UC,
SI
18 UC,SI 18 UC,SI 72 18
18 18 72 72 72
-
18 18 UC 72 5
18 18 18 18 AL , DIC ,
UC
72 46 18 DIC.UC,
SI 18 DIC , UC

(see pages 4-9 for explanation of _company abbreviations.)

108

ELECTRONIC DESIGN

Field-Effect (continued)

Cross Index Key
FET 32
FET 33

Type Ho.
01182 01203 DN307lA DNX6 MFE2093
DNX2 UllO UC850 UC701 U1280
UC703 UC804 UC21 UC23 Ul286
UC854 2N3697 2N4119 2N2843

2N3067

FET 34

2N3366
2N3438
2N3453 2N3456 2N3460

FET 35 FET 36 FET 37

01102 Dl178 Dl185 Dl303 DN3067A
UC-40 UC-42 Ul279 3Nl24 UC704
Ul284 2N3277 UC752 2N2607 Ul33
2N3820 2N3909 UC814 UC805 2N3686
MFE2094 C682 C683 UC20 UC22
UC855 2N2844 Ul325 2N3696 2N3089 2N3089A

FET 38

2N3070
2N3369
2N3821
3N89 01181 D1202 DN3070A DNX5

Oiannel, Construction,
Class And Mfr. Ho. of Elements

DIC

n,DPE,F,3

DIC

n,DPE;F,3

DIC

n,DPE, F,3

DIC

n,DPE,F,3

MO

n,DP,F,3

DIC

n,DPE,F,3

SI

p,DP,F,3

UC

p,F,3

UC

n,F,3

AL

n,OP

UC

n,F,3

UC

p,F,3

UC

n,F,3

UC

n,F,3

AL

n,DP

UC

p,F,3

UC

p,F,3

SI

p,DPE,F,3

SI

p,DPE,F,3

AL

n,DP,F,3

AL

n,DP,F,3

AL

n,DP,F,3

AL

n, DP, F,3

AL

n,OP,F ,3

AL

n,DP,F,3

DIC

n,DPE,F,3

DIC

n,DPE,F,3

DIC

n,DPE,F,3

DIC

n,DPE,F,3

DIC

n,DPE,F,3

UC

p,F,3

UC

p,F,3

AL

n,DP

MO

n,DP,F,4

UC

n,F,3

AL

n,DP

F.A

p,EP,F,~

UC

n,F,3

SI

p,DP,F,3

SI

p,DP,F,3

Tl

p,PL,F,3

Tl

p,PL,F,3

UC

p,F,3

UC

p,F,3

UC

n,F,3

MO

n,DP,F,3

CT

n,F,3

CT

n,F,3

UC

n,F,3

UC

n,F,3

UC

p,F,3

SI

p,DP,F,3

AL

n,F,3

UC

p,F,3

DIC

n,DPE,F,3

DIC

n,DPE,F,3

AL

n,F,3

AL

n,DP,F,3

Tl

n,DP,F,3

SI

p,DP ,F, 4

DIC

n,DPE, F,3

DIC

n,DPE,F,3

DIC

n,DPE, F,3

DIC

n,DPE,F,3

1oss
[Min.-Max.l (mA)
0.1-0.6 0.1-0.6 0.1-0.6 0.1-0.6 0.1-0.7
0.1-1.0 -(0.1-1.0) 0.1-1 0.1-3.0 0.1-10
0.1-10 O.t-12 0.12-0.6 0.12-0.6 0.2 (min)
0.2(min) 0.2-0.6 0.20-0.60 -(0.2-1.0)
0.2-1.0
0.2-1.0
0.2-1.0
0.2-1.0 0.2-1.0 0.2-1.0
0.2-1.0 0.2·1 0.2-1.0 0.2-1.0 0.2-1.0
0.2-1.0 0.2-1.0 0.2-1.5 0.2-2.0 0.2-24
0.2-40 0.25(typ) 0.3(min) -(.30-1.5) -(0.30-1.5)
0.3-15 0.3-15 0.3-15 0.3-25 0.4-1.2
0.4-1.4 0.4-1.6 0.4-1.6 0.4-2.0 0.4-2.0
0.44(min) -(0.44-2.2) 0.5(typ) 0.5-1.5 0.5-2.0 0.5-2.0
0.5-2.5
0.5-2.5
0.5-2.5
-(0.5-2.5) 0.5-2.5 0.5-2.5 0.5-2.5 0.5-2.5

9f, [Min.-Max.l
(µmhos)
500-2500 300-1500 500-2500 500-2500 250-500
300-1000 110 (min) 110 150-1500 250 (min)
500-5000 500-5000 200 (min) 200 (min) 1000-10' 000
540 500-1000 100-250 540 (min)
300-1000
250-1000
800-4500
150-900 300-900 800-4500

BVcss

or

Vp

*8Voss

Of
*Vcs (off)

1css

or
tBVoco

ciss

crss

[Min.-Max.l [Max.l [Min.] [Max.] [Max.l

(volts)

(nA) (volts) (pf) (pf)

2.5 (max) 5

50 -

-

-2.5 (max) 10

25

-

-

-2.5 (max) -1.0 50

15

2 (max)

-

50 -

--

*-2.5

-0.1 -50 6

2

-4 (max) -1.0 50

-

-

1-6

4

20

6

-

6 (max)

2

·20 6

-

6 (max)

0.2

40

3

-

10 (max) 0.1

t50 -

-

6 (max)

0.5

40

6

-

8 (max)

0.5

25

1-2.5

0.1

30

1.0-2.5

0.01

30

8 2.0 1.3

-
--

8.0 (max) 10

t30 -

-

6 (max)

15

25

17

-

0.6-2.0

0.1

30

5

1.2

-2.5-6.0 -0.01 40

3

1.5

1.7 (max) 10

30

17

-

5 (max)

1.0

t50 10

-

7 (max)

5.0

t40 -

-

2.5 (max) 0.5

t50 18

-

5 (max)

0.1

t50 6

-

5 (max)

0.04

t50 5

1.5

2 (max)

0.25

t50 18

300-1000 300-1000
800-4500 800-4500 300-1000

-5 (max) -10

25

-

-5 (max) -5.0 50

-

-2 (max) -5 -2 (max) -10

50 25

--

---
-

-5 (max) -1.0 50

10

1.5

150 (min)

2-5

0.01 30

2.5

-

150 (min)

1.0-2.5

0.01

30

1.4

-

250 (min)

2.5 (max) 0.1

t50 -

-

500-2000

*-2.5

-0.25 -50 14

2

1000-10,000

8 (max)

0.5

40

8

-

1000 (min) 150 (min)
1000 330 (min) 330 (min)

10 (max) 0.5

5(typ)

0.1

t50 18
25 -

--

6 (max)

6

30

17

-

1-4

3

30

10

-

1-4

3

50

10

-

800-5000

*8 (max) 20

20

32

16

1000-5000

*0.3-7 .9 10

20

32

16

800-5000

8 (max)

2

1000-10,000

8 (max)

1

25 16

8

25

12

-

1000-2000

0.6-2.0

0.1

50

4.0

1.2

350-700 400-1000 400-1000 300 (min) 300 (min)
1400 1400 (min) 500 (min) 250-1250 300-900 300-900

*-4.5

-0.1 -50 6

2

1.0-5.0

1.0

30

5

2

1.0-5.0 2.0-5.0
2.0-5.0

1.0

30

0.01 30

0.01

30

5 2.0
1.3

2
--

6 (max)

50

25

25

-

1.7 (max) 30

30

30

-

1.2 (max) 0.1

-

-

-

1-3.5

0.1

30

5

1.2

-5 (max) -1.0 40

14

-

-5 (max) -1.0 40

14

-

9055
[Max.l (µmhos)
-
7
-
1.5
-----
--
10
-
-
-
-
--
-
20
-
--
2
-
--
-
-----
3.0
-
-
-
-
50 50

Alternate Sources
and TO- Remarks
18 18 18 18 72
18 18 18 72 18
72 72 72
-
18
18 72 72 18 UC
18 DIC,UC, SI
18 DIC,UC, SI
18 UC,SI
18 UC,SI 18 UC, SI 18 UC ,DIC,
SI
18 18 18 18 18
72
-
18 72 72
-
72 18 18 DIC, UC, AL 18
92 72 Sl,UC 72 72 72
72 5 18 72
-
18 18 UC 18 72 18 18

750-2500
600-2500
1500-4500
450-1300 750-2500 600-2000 750-2500 750-2500

5 (max)

1.0

t50 15

1.5

-

7 (max)

5.0

t40 -

-

-

*-4

--0.1 -50 6

3

10

3.3(typ) 5

30

3

-

5 (max) 5

50 -

-

-5 (max) 10

25 -

-

---

-5 (max) -1.0 50

15

-

30

4 (max)

-

50 -

-

-

18 DIC,UC , SI
18 DIC,UC, SI
72 MO,UC
72 18 18 18 ,18

(see pages 4-9 for explanation of company abbreviations.)

May 17, 1966

109

field-Effect (continued)

Cross

Index Type

Key

Ho.

FET 39

UC420 2N3796 2N4220 Ul278 U89
Kl004 2N3822 TIS14 UC705 2N3376

FET 40

2N3377 Pl003 Ul68 2N3278 2N3084
2N3085 2N3086 2N3087 2N3365 2N3066

FET 41

2N3437 2N3452 2N3455 2N3459
DI IOI Dll77 Dll84 Dl302 DN3066A

FET 42

DNXl UC753 2N2608 2N3578 2N2386
Ull2 UC851 2N3328 UC807 2N3821

FET 43

2N2497 2N3329 MFE2095 2N3685 UC220
2N2500 2N3332 2N3823 Ul283 UC240

FET 44

2N3695 3Nl25 C684 C685 Ul277
2N2498 2N3330 2N4221 UC410 2N3069

FET 45

2N3822 2N2609 Dll80 Dl201
DN3069A DNX4 2N3368
2N3819

Oionnel,

Construction,

Closs And

Mfr .

Ho. of Elements

UC

p,F,3

MO

n,DP,M,3

MO

n,DP,F,3

AL

n,DP

SI

p,DP,F,4

KMC n,M,4

UC

n,F,3

Tl

n,EP, F,3

UC

n,F,3

SI

SI

AL

p,PL,F,3

SI

p,DP,F,3

FA

p,EP,F,3

CT

n,F,3

CT

n,F,3

CT

n,F,3

CT

n,F,3

AL

n,DP,F,3

AL

n,DP,F,3

AL AL AL AL
DIC DIC DIC DIC DIC
DIC UC SI SI Tl
SI UC SI UC UC
Tl SI MO UC UC
Tl Tl Tl AL UC
UC MO CT . CT AL
Tl SI MO UC AL

n,DP,F,3 n,DP,F ,3 n,DP,F,3 n,DP,F,3
n,DPE, F,3 n,DPE , F,3 n,DPE,F,3 n,DPE,F,3 n,DPE,F,3
n,DPE, F,3 n,F;3 p,DP,F,3 p,DP,F, 3 p,DP,F,3
p,DP ,F, 3 p,F,3 p,DP ,F, 3 p,F,3 n,F,3
p,DP,F,3 p,DP,F,3 n,DP,F,3 n,F,3 n,F,3
p,DP,F,3 p,DP,f,3 n,EP , F,3 n,DP n,F,3
p,F,3 n,DP,F,4 n,F,3 n,F,3 n,DP
p,DP,F,3 p,DP,F ,3 n,DP,F,3 p,F,3 n,F, 3

Tl

n.EP ,F,3

SI

p,DP,F,3

DIC

n,DPE,F,3

DIC

n,DPE,F,3

DIC

n,DPE ,F,3

DIC

n,DPE, F,3

AL

n,DP,F, 3

Tl

n,EP,F,3

110

'o5s
[Min.-Max.1 (mA)
0.5-2.5 0.5-3.0 0.5-3.0 0.5-3.0 -(0.5-5.0)
0.5-7.0 0.5-10 0.5-15 0.5-50
0.6-6.0 -(0.6-6) 0.67.(typ) 0.8-3.0
0.8-3.0 0.8-3.0 0.8-3.0 0.8-4.0 0.8-4.0
0.8-4.0 0.8-4.0 0.8-4.0 0.8-4.0
0.8-4.0 0.8-4.0 0.8·4.0 0.8-4.0 0.8-4.0
0.8-6 0.9(min) -(0.90-4.5) -(0.9-4.5) -{0.9-9.0)
-(0.9-9.0) 0.9-9 -1 (max) l(min) 1-2.5
1·3 -(1·3) 1.0-3.0 l.(}.3.5 J.(}.5.0
1-6 1-6 . 1-7.5 1.0-10 l.(}.10
1.25-3.75 1.5-4.5 1.5-6.0 1.5-6.0 1.5-8.0
2-6 -(2-6) 2-6 2-6 2·10
2·10 -(2-10) 2-10 2-10
2-10 2-10 2-12
2-20

9fi (Min.-Max.1
(µmhqs)
1500 (min) 900-1800 1000-4000 350 (min) 450-1300
800 (min) 3000-6500 1000-7500 2000-20,000 800-2300
800-2300 1000-3500 800 (min) 200 (min) 400-1200
400-1200 400-1200 400-1200 400-2000 400-1000
1500-6000 200-1200 400-1700 1500-6000
400-2000 400-2000 1500-6000 1500-6000 400-1000
400-1500 2500 1000 (min) 1200-3500 1000 (min)
1000 (min) 1000 100 (min) 2500-25,000 1500-4500
1000-2000 1000-2000 400-800 1500-2500 3000 (min)
1000-2200 1000-2200 3500-6500 1500 (min) 1200 (min)
1000-1750 800-2400 600-1500 600-1500 450 (min)
1500-3000 1500-3000 2000-5000 2250 (min) 1000-2500
3000-6500 2500 (min) 1000-2500 1000-2500
1000-2500 1000-2500 1000-4000
2000-6500

Yp
Of
*Yes (off)
[Min.-Max.1 (volts)

1css
[Max.l
(nA)

BVcss
or
*BYoss
or
t BVoco
[Min.1 (volts)

ciss
[Max.1 (pF)

crss
fMax.1 (pF)

9ass [Max.] (µmhos)

Alternate Sources
and TO- Remarks

2.5 (max) 0.1

30

8

-

*-4

-0.01 -25 7

0.8

1-4

-0.1 -30 6

2

4.5 (max) 0.1

t50 -

-

3.3(typ) 10

20

3

-

-

72

25

18

10

72

-

18

-

72

12 (max) 0.05 15

4.5

0.7

6 (max) 0.1

50

6

3

*6.5 (max) 1

30

8

4

8 (max) 1

40

12

-

1-5

3

30

5

3

1-5

3

30

4

2

3 (max)

3

-50 20

-

5 (max)

30

20

65

-

8(typ)

0.1

25 -

-

-10

0.1

30

5

2

-10

0.1

30

5

2

-10

1.0

40

5

2

-10

1.0

40

5

2

12 (max) 5.0

t40 -

-

10 (max) 1.0

tSO 10

1.5

5.0

0.5

t50 18

-

10 (max) 0.1

tSO 6

-

10 (max) 0.04

t50 5

l.5

4 (max)

0.25

t50 18

5

-10 (max) -10

25

-

-

-10 (max) -5

50 -

-

-4 (max) -5

50 -

-

-4 (max) -10

25

-

-

-10 (max) -1.0 50

10

1.5

1000

18

-

72

-

72

-

72

-

72

-

-

18

---

18 72
5

-

18 DIC

-

5

--

18 DIC 18 DIC, UC

-

18 DIC,UC,

SI

-

18 UC , SI

-

18 UC.SI

-

18 UC ,S I

-

18 UC,SI

-

18

-

18

-

18

-

18

50

18

-8 (max) -1.0 50

-

-

6 (max)

10

30

25

-

1-4

10

30

17

-

1.5-4

15

20

65

-

8 (max)

10

20

50

-

16

4

20

17

-

6 (max)

4

*20 17

-

6 (max)

1

20

4

-

12 (max) 2

20

30

-

4 (max)

0.1

50

6

3

15 (max) 10

-

32

-

*5 (max) 0.01

-20 20

-

*-5.5

--0.1 -50 6

2

1.0-3.5

0.1

50

4.0

1.2

2.5 (max) 0.1

50

7.0

-

15 (max) 10

-

32

-

6 (max)

10

-

20

-

*8 (max) 0.5

30

6

2

2.5 (max) 0.5

t50 18

-

5.0 (max) 0.1

50

18

-

2-5

0.1

30

5

1.2

*-4.0

-0.25 -50 14

2

2.0-10

1.0

30

5

2

2.0-1.0

1.0

30

5

2

8.0 (max) 0.1

t50 -

-

15 (max) 10

-

32

-

6 (max)

0.01

-20 20

-

*-6

-0.1 -30 6

2

4 (max) 0.1

30

8

-

10 (max) 1.0

t50 15

1.5

*6 (max) 0.1

50

6

3

1-4

30

30

30

-

10 (max) 5

50

-

-

-10 (max) 10

25

-

-

-

18

-

18

-

18 AL, UC

-

18

-

5 SI , UC

-

18

-

18

-

72

-

18

-

72 UC

-

5 SI , UC

-

72 Tl, UC

10

72

-

72

-

72

-

5 UC 72 UC

-

~~UC

-

72

10

72

-

5

-

18

-

18

-

5 SI, UC

-

72 Tl . UC

20

72

-

72

-

18 DIC, UC,

SI

--

72 MO 18 AL , UC

-

18

-

18

-10 (max) -1.0 50

15

-

8 (max)

-

50 -

-

12 (max) 5.0

t40 -

-

*8 (max) 2

25

8

4

80

18

-

18

-

18 DIC, UC,

SI

-

92

.(see pages 4-9 for explanation of company abbreviations.)

ELECTRONIC DESIGN

Field-Effect (continued)

Cross Index Type Key Ho.

FET 46

Pl004 Ul83 UC714 2N3684 UC707
2N2386 2N3378 2N3379 3Nl26 2N3436

FET 47

Dll83 Dl301 2N3458 2N3797 UC210
TIS34 Ul282 2N2499 2N3331 2N4222

FET 48

UC400 Pl005 Ul281 UC200 TIXS35
Ul46 2N2841 TIXS36 Ul47 2N2842

FET 49

Ul287 Ul48 Ul49 2N3608 DE1004
HA2001 TIXSll

Mfr.
AL SI
[f(
UC UC
Tl SI SI MO AL
DIC DIC AL
MO
UC
Tl AL Tl Tl MO
UC AL AL UC Tl
SI DIC Tl SI DIC
AL SI SI GME GME
HU Tl

O.annel, Construdian,
Closs And Ha. of Elements
p,PL,F,3 n,DPE,F,3 n,F,3 n,F,3 n,F,3
p,F,3 p,DP,F,3 p,DP,F,3 n,DP,F,4 n,DP,F , 3
ri,DPE,F,3 n,DPE , F,3 n,DP n,DP,M,3 n,F,3
n;EP,F,3 n,DP p,DP,F,3 p,DP,F,3 n,DP,F,3
p,F,3 p,PL,F,3 n,DP n,F,3 n,EP,F,4
p,DP,F,3 n,DPE,F,3 n,EP,F,4 p,DP,F, 3 p,DPE , F,3
n,DP,F,3 p,DP,F, 3 p,DP,F,3 p,M,4 p,M,4
p,M,4 p,PL,M,3

loss [Min.-Max.l
(.A)
2-20 2-20 2-20 2.5-7.5 2.5-250
3(typ) -(3-6)
-(3-6)
3-9 3.0-15
3-15 3.0-15 3.0-15 4-6 4-12
4-20 4.0-20 5-15 5-15 5·15
5-15 5-25 S{max) 10-30 10-50
-25 (min) 25-125 40-200 -65 (min) -(65-325)
._lOO(typ)
~ --
--

9f,
[Min.-Max.l (µmhos)

Yp
Of
*VGS (off)
(Min.-Max.l (volts)

1Gss (Mox.l
(nA)

BVGSS or
*8Voss or
tBVoGo
[Min.l (volts)

ciss [Mox.] (pF)

crss [Mox .] (pF)

2500-6000

5 (max) 3

-50 20

-

2000-6500

-8 (max) -2

-25 8

4

2000-6500

8 (max) 1

30

8

4

2000-3000

2~s

0.1

50

4.0

1.2

5000-50,000

12 (max) 2

20

30

-

1000-3000

8 (max) 10

20 -

-

1500-2300

4.5

3

30

5

3

1500-2300

4-5

3

30

4

2

1200-3600 2500-10,000

·-6.5

-0.25 -50 14

10 (max) 0.5

t50 18

2
-

2500-10,000

-8 (max) -5

50 -

-

2500-10,000

-8 (max) -10

25

-

-

2500-10,000

8 (max) 0.25 t50 18

-

1500-3000 4500 (min)

·-4

-0.001 -25 8

0.8

4.0 (max) 0.1

50

7.0

-

3500-6500 2500 (min)
2000-4000 2000-4000 2500-6000

1-8

5

30

6

2

4.5 (max) 0.5

50

-

-

15 (max) 10

-

32

-

8 (max) 10

-

20

-

·-0

-0.1 -30 6

2

3000 (min)

6 (max) 0.1

30

8

-

3500-7000 250 (min) 6000 (min)

8 (max) 3

-50 20

-

10 (max) 0.1 6.0 (max) 0.1

t50 -

50

7.0

--

10,000-20,000 ·1.5

10

30

12

5

60 (min) 60-300

6 (max) 10 l.7 (max) l.O

20 -
-40 6

-

10,000-20,000 180 (min) 180-500

·3-10

10

6 (max) 20

l.7 (max) 3

30

12

20 -

-40 6

-5-

20,000 540 (min) 1400 (min) 800 (min) 600(min)
1000-2000 800 (min)

15 (max) 2.0 . 30

-

6 (max) 60

20

-

6(max)

200

20

-

-
--

·.4 (typ) 0.002 ·-30 8.0

2.5

·3

1000 ·20 10

3

-

0

·35 8.0

l

3-6

0.003 30

8

3

9oss [Mox.] {t.tmhos)
-
~o
-
20
-
--
60
-
--
--
40
-----
--
--
---
--
--

Alternote Sources
and TO. Remarks
18 72 72 72 18
5 SI.UC 72
-
72 18 UC, SI
18 18 18 UC,SI 18 72
92 18 5 SI 72 SI, UC 72
72 18 18 72 72
18 18 72 18 18 UC
t tMT25 package 18 *loss (min.)= 0.2 18 *loss (min.)= 0.44 5 18
72 72

Type 3(b). Low-noise ac amplifiers: Listed by descending order of NF.

J e·n

i"

nV/y'Hz (Max .1 pA/ {Ri

at(l =-kH1) I

Cross Index Type

O.annel, Construction,
Class And

* HF [Max.]

or
I~
at

9fs fMin.-Mox.l

1oss [Min.-Max.l

Key

Ha.

Mir .

Ho. of Elements

(dB)

Rgen =-kO

{µmhos)

(mA)

BVGSS
Ol
* BVoss [Min.] (volts)

FET 50

Ul68 2N3578 2N3458 2N3796 2N3797

SI

p,DP,F,3

SI

p,DP,F , 3

SI

n,DPE,F ,3

MO

n,DP,F,3

MO

n,DP ,M,3

25/ (1)

0.019

800 (min)

-(0.6-6.0) 20

18/ (1)

0.017

1200-3500

0.9-4.5

20

*6

.02 / 1000 2500-10,000

3-15

-

·5

200000 / - 900-1800

0.5-3

-25

*5

200000 / - 1500-3000

4-6

-25

1GSS [Mox.] (nA)

ciss
(Mox.] (pF)

30

65

15

65

0.25 18

-0.001 7

-0.001 8

Yp or
* VGS (off) [Min.-Max. l
(volts)
5 (max) l.5-4 7.8 (max) -4(typ) -4(typ)

Alternate Sources
and TO. Remarks
18 18 18 72 72

FET 51

2N3821 2N3822 2N4220 2N4221 2N4222
2N4223 2N3331 2N3455 2N3456 2N3457

Tl

n,EP,F,3

Tl

n,EP , F,3

MO

n,DP,F,3

MO

n,DP,F,3

MO

n,DP,F,3

MO

n,DP,F ,3

Tl

p,DP,F,3

SI

n,DPE,F ,3

SI

n,DPE , F,3

SI

n,DPE,F,3

·5

0.01 / 1000 1500-4500

0.5·2.5

50

0.1

6

·4 (max) 72

·5

0.01 / 1000 3000-6500

2-10

50

0.1

6

*6 (max) 72

*5

200000 / - 1000-4000

0. 5-3

-30 -0.1 6

-4 (typ) 72

*5

200000 / - 2000-5000

2-6

-30 -0.1 6

-6(typ) 72

*5

200000 / - 2500-6000

5-15

-30 -0.1 6

-8(typ) 72

*5

200000 / - 3000-7000

3-18

-30 -0.25 6

·-1-7

72

·4

1/ 1000

2000-4000

5-15

-

10

20

*8 (max) 72

*4

.02 / 1000 400-1200

0.8-4.0

50

-0.04 5

-9.8 (max) 72

*4

.02 / 1000 300-900

0.2-l.O

50

-0.04 5

-4.8 (max) 72

*4

.02 / 1000 150·6QO

0.05-0.25 50

-0.04 5

-2.3 (max) 72

2N3460 2N3459
2N3088 2N3089 2N3329

FET 52

·2N3330 P-102 2N3452
2N3453
2N3454

SI

n,DPE,F,3

SI

n,DPE,F ,3

CT

n,F ,3

CT

n,F,3

Tl

p,DP ,F,3

Tl

p,DP ,F,3

SI

p,DP,F,3

SI

n,DPE ,F,3

SI

n,DPE,F,3

SI

n,DPE ,F,3

*4

.02/ 1000 800-4500

0.2-1.0

50

0.25

18

l.8 (max) 18

'4

.02 / 1000 1500-6000

0.8-4.0

50

0.25 18

3.4 (max) 18

·3

.01 / 1000 300-900

0.5-2.0

15

l.O

5

5(typ)

5

*3

.01 / 1000 300-900

0.5·2.0

15

1.0

5

5(typ)

18

*3

1/ 1000

1000-2000

1-3

-

10

20

*5 (max) 72

*3

l / 1000

1500-3000

2-6

-

10

20

*6 (max) 72

·3

1/ 1000

1600(typ)

0.90-4.5

30

10

17

1-4

18

·2.0

.1 / 1000

200-1200

0.8-4.0

50

-0.1 6

-9.8 (max) 72

*2.0

.1 / 1000

150-900

0.2-l.O

50

-0.1 6

-4.8 (max) 72

*2.0

.1 / 1000

100-600

0.05-0.25 50

-0.1 6

-2.3 (max) 72

(see pages 4-9 for explanation of company abbreviations.)

May 17, 1966

111

Field-Effect (continued)

0.111111el,

Cross

Canstructian,

Index Type

Class And

Key

Ho.

Mfr.

Ho. of Elernents

2N3823

Tl

n,EP , F,3

2N3823

SI

n,DPE,F,3

2N3332

Tl

p,DP,F,3

2N3088A

CT

n,F ,3

2N3089A

CT

n, F,3

FET 53

DN3066A

DIC

n,DPE, F,3

DN3067A

DIC

n,DPE , F,3

DN 3068A

DIC

n,DPE,F,3

DN 3069A

DIC

n,DPE,F ,3

DN 3070A

DIC

n,DPE,F,3

DN3071A

DIC

n,DPE, F,3

2N3695

UC

p, F,3

2N3696

UC

p,F,3

2N3697

UC

p,F,3

2N3698

UC

p,F,3

FET 54

2N3684

UC

n,F,3

2N3685

UC

n,F,3

2N3686

UC

n,F,3

2N3687

UC

n,F,3

UC 240

UC

n,F,3

2N2386

Tl

p;DP,F ,3

2N2497

Tl

p,DP,F,3

2N2498

Tl

p,DP,F,3

2N2499

Tl

p,DP,F,3

2N2500

Tl

p,DP,F ,3

FET 55

2N3819

Tl

n,EP,F,3

2N3820

Tl

p,PL,F,3

2N3909

Tl

p,PL , F,3

TIS14

Tl

n,EP ,F,3

TIS 34

T:

n,EP,F,3

TIXSJJ

Tl

p,PL,M,3

FET 56 TIXS35

Tl

n,EP , F,4

TIXS36

Tl

n,EP , F,4

... I in

11V/Vffi lMax.1 pA/VffZ
I at {f =-kHz) or

*HF [Max.l (dB)

I~
at Rgen =-k!l

·2.5

100000 / 1

·2.5

.I / 1000

,·1

1/ 1000

·o.5

.01 / 1000

·o.5

.01 / 1000

·0.25

1/ 1000

·o.25

1/ 1000

·0.25

I I 1000

·0.25

l / 1000

·Q.25

1/ 1000

·0.25

1/ 1000

0.20

-

0.20

-

0.20

-

0.20

-

0.15

-

0.15

-

0.15

-

0.15

-

0.02

-

--
--

----

----

---

--

---

9fs fMin .-Max.l (µmhos)
3500-6500 3200 (min) 1000-2200 300-900 300-900
400-1000 300-1000 300-1000 1000-2500 750-2500
500-2500 1000-1750 750-1250 500-1000 250-750
2000-3000 1500-2500 1000-2000 500-1500 1200 (min)
1000 (min) 1000-2000 1500-3000 2000-4000 1000-2200
2000-6500 800-5000 1000-5000 1000-7500 3500-6500
800 (min) 10,000-20,000 10,000-20,000

1oss [Min.-Max.]
(mA)

BVcss
or · svoss
[Min.] (valts)

less [Max.] (nA)

1·7.5 4-20 1-6 0.5-2.0 0.5-2.0

30

0.5

30

-0.5

-

10

15

1.0

15

1.0

0.8-4.0

50

1.0

0.2-1.0

50

1.0

0.05-0.25 50

1

2-10

50

-1.0

0.5-2.5

50

-1.0

0.1-0.6

50

-1.0

1.25-3.75 30

0.1

0.5-1.5

30

0.1

0.2-0.6

30

0.1

0.05-0.25 30

0.1

2.5-7.5 1-3.5 0.4-1.2 0.1-0.5 1-10
-
1-3 2-6 5-15 1-6

50

0.1

50

0.1

50

0.1

50

0.1

50

0.1

-

10

-

10

-

JO

-

10

-

10

2·20 0.3-15 0.3-15 0.5-15 4-20
-
10-50 40-200

25

2

20

20

20

JO

30

1

30

5

30

0.003

30

10

30

10

ciss
[Max.] (pf)

Vp
ar
· vGS (off)
[Min.-Max .l (volts)

Alternate Sources
and TO. Remarks

6

*8 (max) 72

6

-8 (max) 72

20

*6 (max) 72

5

5(typ)

5

5

5(typ)

18

10

-(3.5·10) 18

10

-(l.5-5) 18

10

-(.4·2.5) 18

15

-(2.5-10) 18

15

-(1.0-5) 18

15

-(0.4-7.5) 18

5

2-5

72

5

1-3.5

72

5

0.6-2.0

72

5

0.3-1.2

72

4

2-5

72

4

1-3.5

72

4

0.6-2.0

72

4

0.3-1.2

72

18

5-18

18

50

8.(max)

5

32

15 (max) 5

32

15 (max) 5

32

15 (max) 5

32

15 (max) 5

8

*8 (max) 72

32

*8 (max) 72

32

·o.3-7.9 72

8

*6.5 (max) 72

6

1-8

72

8

3-6

72

12

·1.5

72

12

*3-10

72

Type 3(c). High-frequency (f> lMHz) ac amplifiers: Listed by ascending order of grs·

Cro ss Index Key FET 57
FET 58
FET 59
FET 60

Type Ho .
3N89 U89 DE1004 2N3608 TIXSll
2N3376 2N3377 2N3820 KlOOI K1201
TIS14 2N3378 2N.3379 2N3380 2N3381
2N40 38 2N4039 2N3821 2N3819 2N422 4
2N3822 2N4223 2N3823
TIS 34
Kl003 FT 57 TI XS35 TI XS36

Mfr.
SI SI GME GME Tl
SI SI Tl KMC KMC
Tl SI SI SI SI
TRWS TRWS Tl Tl MO
Tl MO Tl
Tl
KMC FA Tl Tl

O.annel, Construction,
Class And Ho. of Elements
p,DP J. 4 p,DP,F, 4 p,M,4 p,M,4 p,PL,M ,3
p,DP,F , 3 p,DP ,F,3 p,PL,F ,3 n,M,4 n,M,4
n,EP,F,3 p,DP ,F,3 p,DP ,F, 3 p,DP ,F, 3 p,DP,F ,3
n,DP ,M,3 n,DP ,M,3 n,EP ,F, 3 n,EP,F ,3 n,DP,F,3
n,EP ,F,3 n,DP,F ,3 n, EP ,F,3
n,EP ,F,3
n,M, 4 n,EP ,M, 4 n,EP,F ,4 n,EP ,F,4

9fs [Min .-Max .l (µmhos)
450-1300 450-1800 600 (min) 800 (min) 800 (min)
800-2300 800-2300 800-5000 lOOO(min) 1000 (min)
1000-7500 1500-2300 1500-2300 1500-3000 1500-3000
1500-3000 1500-3000 1500-4500 2000-6500 2000-7500
3000-6500 3000-7000 3500-6500
3500-6500
4000 (min) 6000 (min) 10,000-20,000 10,000-20,000

crss [Max .] (pf)
3 2. 5 3
3 2 16 0.7 0.3
4 3 2 3 2
0.2 0.2 3 4 2
3 2 2
2
1.0 0.8 5 5

ciss [Mox .l (pf)
3 3 10 8 8
5 4 32 4.5 3.0
8 5 4 5 4
2.5 2.5 6 8 6
6 6 6
6
3.5 2.7 12 12

9iss [Max.l (µmhos)
-
-
-
-
800 800
---
-
-
--
800
800 ..
800 60 (typ) -

BVGSS or
·evoss
fMin .] (volts)
30 30 · - 20 · -30 30
30 30 20 15 15
30 30 30 30 30
*20 ·20 50 25 30
50 30 30
30
15 25 30 30

1oss [Min .-Max.l
(mA)

Vp
or
* Yes (off) [Min .-Max.l
(vcilts)

-(0.5-2.5) - (0.5-5.0) 0.0001
0.00003
-

3.3 (typ) 3.3 (typ)
-
3-6

0.6-6
0.6-6 0.3-15 5-1 2 1-5

1-5 1-5 . ·9 (max) 6 (max) 5 (max)

0.5-15 3-6 3-6 3-20 3-20

*6.5 (max) 4.5
4-5 5-9.5 5-9.5

~. 1
0-0.1 0.5-2.5 2-20 2-20

0-2 - (2-6) *4 (max) *8 (max)
*-(1-7.5)

2-10

*6

3-18

*-(1 -7)

1-7.5

*8 (max)

4-20

1-8

12-20 9-26 10-50 40-200

6 (max) 10 (max) *1·5 *3-10

--HF
[max .] dB at (! =-kHz
Rgen =-k!l
-
-
-
-
4.5 (200 MHz) 4.5 (450 MHz)
-
-
3(100MH z/ l MO ) 3(100MH z/ 1M!l) 5(0.01 KHz/ I Mn) -
-
5(0.01 KHz/ I Mn ) 5(200MH z/ 1KO ) 2.5(100MHz/ l KO )
-
4.5 (200 MHz) 4 at O.JGHz/ 2.5Kn -
-

Alternate Sources
and TO. Remarks
72 72 18 5 72
72
72 18 18
72 72 FP 72 FP
72 72 72 72 72
72 72 72 SI,
UC 72
18
72 72

(see pages 4 -9 for explanation of company abbreviations.)

112

ON READER-SERVICE CARD CIRCLE 28 ~

Now! All the Features of Larger Size·
Potentiometers- Except Larger Size! _
(1) Dimensions: 1/.i" x 1/.1" x 0.17"
(2) Multi-turn adjustment (3) Damage-proof Clutch action . . .. (4) Indestructible SILVERWELD® termination
(5) Standard resistances from lOc to 20K
(6) 20 pprri wire

Use the unijunction transistor that does
the job best. Listed by major parameters, these
three charts facilitate selection.

Choice of the right unijunction transistor (UJT) for any application will save a lot of design and test time. To facilitate selection, ELECTRONIC DESIGN has separated the UJTs into three categories, each intended for a specific set of applications. The parameter definitions and test set-ups that follow provide a good understanding of how the UJT works, and show the relationship between application and UJT parameter specifications.
Within the limits of its relatively low frequency capabilities (a few hundred kilohertz at most), the UJT is ideal for such applications as relaxation oscillators, timing circuits, voltage and current level-sensing, frequency dividing, precision triggering of the SCR, SCS, and Triac, control of frequency for inverters and oscillators, and sawtooth and pulse generation.
The UJT data listings are organized according to key design parameters. 'These are:
· Type 1-for pulse applications such as SCR triggering; in order of increasing VoB1 (base-one peak-pulse .voltage).
· Type 2-for high-frequency, short timing period, and voltage-sensing applications; in order of increasing Iv (valley current).
· Type 3-for low-frequency, long timing period, and current-sensing applications; in order of decreasing values of /p (peak-point current).
To select a UJT, many other factors should also be considered. These include circuit acceptance of parameter spreads, supply voltage requirements, frequency, ambient temperature range, power diss~pation, current limitations, package type and size, and device cost.
Basic concepts explained
The UJT, a three-terminal semiconductor device, is distinctive by having a negative resistance characteristic which is highly stable with voltage, temperature and time. Fig. 1 shows the schematic symbol for the UJT as well as the relationship of .the leads when the device is housed in a standard transistor can. By examining the simplified equivalent circuit shown in Fig. 2, the operation of this device can be easily visualized. Though different geometries exist , the UJT consists basically of a pellet of n-type silicon with ohmic
Dwight V. Jones, Applications Engineer, Semiconductor Products Dept., General Electric Co., Syracuse, N. Y.
114

contacts, base-one (B1) and base-two (B2), at opposite ends of the pellet. At some point between these two, a single rectifying contact, the emitter (E), is attached. The interbase resistance, R11Bo, is the sum of Rs1 and RB.2 and is between 5 and 10 kilohms.
In the equivalent circuit, the diode (D) represents the UJT's emitter diode. In normal circuit operation, a positive bias voltage (V88 ) is applied at base-two. With no emitter current flowing, the silicon pellet acts as a simple voltage divider; a certain fraction, TJ, of VBs appears at the emitter. If the emitter voltage, VE, is less than TJ V 118 , the emitter becomes reverse-biased and only a small emitter leakage current flows. If VE is greater than TJ V 11s, the emitter is forward-biased and emitter current flows. This causes a decrease in the resistance between the emitter and base-one. As the emitter current increases, the emitter voltage decreases and a negative-resistance characteristic is obtained.
This characteristic is shown in Fig. 3 for a
typical UJT. On this curve, the two major points of interest are the peak point and the valley point. To the left of the peak point is the cut-off region where the emitter is reverse-biased and only a small ·leakage current flows. To the right of the valley point is the saturation region where the dynamic resistance is positive. The negative resistance region lies between these two points.
A better understanding can come from examining the relaxation oscillator circuit, shown in Fig. 4a, which is basic to most UJT applications. At the beginning of each cycle the emitter is reversebiased and hence non-conducting. As the capacitor (Cr) is charged through the resistor (Rr), the emitter voltage rises toward .the supply voltage,
E
1. Unijunction transistor is represented by this symbol, where the emitter, base-one and base-two are identified by E, 81 , and 82 · The circular outline shows the pin relationships for a transistor. type package.
ELECTRONIC DESIGN

IE E

le2 Rez

B2
I
Vee

VE

Re1

'7Vee

o----------jt---------11..---~e,
2. Simplified equivalent circuit of a unijunction transistor
aids device analysis. When VE is larger than 71 VBB + Vn,
the · diode · conducts, Rn, reduces in value, - and a large emitter current flows.

V 1· When the emitter voltage reaches the peakpoint voltage, Vp, the emitter becomes forwardbiased and the dynamic resistance between the emitter and base-one drops to a low value. Capacitor Cr then discharges through the emitter. When the emitter voltage reaches VE(MINh as shown in Fig. 4b, the emitter ceases to conduct and the cycle is repeated. The minimum emitter voltage, VE(M1N;, is approximately equal to 0.5 V E(SATJ· If Ri is zero, it is relatively independent of bias voltage, temperature and capacitance. For small values of Ri and R 2, the frequency of oscillation is:

f

~

1 -R-rC-Tln_(_I/-1---7/-)

.

(1)

The UJT relaxation oscillator is noteworthy for its ability to operate over a wide range of circuit parameters and ambient temperature. Several important conditions must be satisfied if this circuit is to operate satisfactorily. These are:
· The load line. formed by resistor RT, must intersect the emitter characteristic curve to the right of the peak point. This condition ensures that RT can supply sufficient current to the emit-
ter fo trigger the UJT. This condition may be
written:

(2)

Generally IP is specified at an interbase voltage of 25 volts and is inversely proportional to VBB· This equation sets the maximum limit on RT. RT must be chosen to satisfy this inequality under the worst conditions for each of the other parameters. The worst conditions would include the maximum value of V p, the minimum value of V1, and the maximum value of [p at the minimum temperature of operation.
· The load line formed by RT must also intersect the emitter characteristic to the left of the valley point. This may be written:

(3)

Since V v is circuit-dependent, its value should be measured in the actual circuit. If this condition is not satisfied, the load line will intersect the emitter-characteristic curve in the saturation region

May 17, 1966

VE

NEGATIVE

-CUTOFF- .,___ RESISTANCE

REGION_

REGION

SATURATION-REGION

Vp

~

I

PEAK POINT

I

I

Vee=IOV

I

.J/- - - - - - - I
VE (SAT)- - - , - - - -

I VALLEY POINT
--

Vv- - - ,- - - - - - - I

I

Ip

3. Emitter .characteristic curve shows the three operating regions. When the emitter diode goes into conduction, the device shifts its operating point through the negative resistance region to the saturation region.

and the UJT may not turn off after it triggers on the first cycle. Note that the value of valley current includes the effects of the base-one and basetwo external series resistors. If these are large, the value of Iv will be reduced as indicated in Fig.
5.
· Finally the operation of the UJT relaxation oscillator greatly depends on the allowable range of capacitance Cr. As the size of Cr decreases from 0.01 to 0.001 ,uF, the amplitude of the emitter waveform will decrease. This decrease is actually a function of the frequency capability of the UJT being used. For most UJTs the emitter peak current should not exceed two amperes for values of CT less than 10 ,uF and peak-point voltages less thari 30 volts. For higher values of Cr or V p, resistance should be used in series with the capacitor to protect the emitter circuit. This additional series resistance should be on the order of at least one ohm per microfarad of Cr.
In general the limitations i'mposed by the first two conditions are not severe. A maximum value of IP might be 2 ftA and a minimum value of I v might be 8 mA. The allowable range of RT then would be 1000 to 1 or approximately 3 kn to 3 Mn.

Defining the parameters

To properly select the device that will function

best in any particular circuit, it is important to

understand the meaning attached to each of the

parameters and the· methods by which these val-

ues can be checked in the laboratory. The follow-

ing definitions and test circuits will greatly help

in achieving a working design.

The intrinsic stand-off radio (1/), one of the most

important parameters, is defined by the equation:

+ v Vp = 1J V RB

D1

where VP is the peak-point emitter voltage, V RR is the interbase voltage, and V0 is the emitter diode's forward-voltage drop.

For a given UJT type, there is a range of values

for the intrinsic stand-off ratio from device to

device. Since the basic UJT circuit has a frequen-

cy characteristic which is dependent on R r, Cr

and 71, a wide range of 1/ will greatly affect the operating frequency of this basic oscillator.

Though Rr can be adjusted to compensate for this

115

CA-1 75K

50K

4; The basic unijunction circuit, .a relaxation oscillator (a), provides a sawtooth output. The characteristic curve (b) shows the effect of increasing the value of the charg· ing capacitor, CT.
14

12

en ~ 0
>I 10

~,-,.---+~~-+-~~-+-~~+-_,,~~~-::.:+~~-4

~
I
w
C>
~ 8

t--~-..+'~~--~~-+-~~-+-~---4~~--1-~~-'

> 0 aw : ~ 6 1--~----t-~----.--c--~-+-~~-+-~--l~~-+~~-t

w ~

Rl=O

0

2

4

6

8

10

12

14

EMITTER CURRENT-IE-MILLIAMPERES
G)

14

(/)
~IOH..-~-+-~~+-~-+-~~+--~-+-~~+-~-+-~--1

> 0
I

~

8 I

l-+-----~~..__~_._~~t--~-+-~~+--~-+-~--1

w
C>
~

> 6 0 t-------~--~~--~~t--~-+-~~+--~-+-~--1

wa:
II-
~ 4 1--~~~~~~-+-~~"-::,...--+-~~+--~-+-~--I

R2=colle2 =2.7mAl

0 ---~--~~---~_._~__..,__~__._~~....._~...._~_,

0

2

4

6

8

10

12

14

16

EMITTER CURRENT-IE -MILLIAMPERES

@

5. Emitter characteristic curves, for a typical unijunction transistor, as a function of the base-one series resistance (a) and the base-two series resitance (b).

116

100µ.A
6. Test circuit for measuring the intrinsic ·stand-off ratio (71) uses a simple peak detector to measure the peak emitter voltage. Direct reading meter is set to read full scale by Ra when the CAL button is pressed.

variation, in narrow-range and critical circuits,

the use of a unijunction having a narrow. range

of 71 will greatly simplify the design, assure better temperature stability, and lower component cost.

In addition, if the desired circuit is to operate with

a low supply voltage, a UJT with a high value of 71 will permit a lower resistance value for the base-

two temperature-compensating resistor (R2).

This results in a higher interbase voltage ( V BB)

which increases the control range of the emitter

timing resistor.

The circuit shown in Fig. 6 may be used to

measure 77· In this circuit R,, C1 and the UJT form a relaxation oscillator. The remainder of the

circuit serves as a peak-voltage detector. The

diode automatically subtracts the emitter-diode

voltage, Vn· To use the circuit, the "CAL" button

is pushed and Ra is adjusted until the meter reads

full scale. The "CAL" button is then released and

the value of 77 is read directly from the meter. To

protect the imijunction, the power supply should

have a current limit control.

The base-one peak-pulse voltage (V0B1) is an

important measurement when pulse generation is

desirable or required. Essentially a circuit meas-

urement, the use of a standard test circuit allows

for easy comparison of various devices. The output

of the circuit" shown in Fig. 7 can be monitored

with a scope to determine all of the pulse charac-

teristics.

·

The valley current U v ) is the emitter current at

the valley point. This current will increase as the

interbase voltage increases, and decrease with the

resistance in series with base-one or base-two.

Where fast response or high-frequency operation

is desirable, this becomes an important parameter.

Being circuit-dependent, this measurement should

be made on the actual cfrcuit.

The peak-point current (Ip) . represents the

minimum current which is required to trigger the

UJT. It corresponds to the emitter current at the

peak-point and is inversely proportional to the

interbase voltage. In applications that require a

high input impedance or a long timing period, this

parameter becomes important while Iv does not.

The circuit shown in Fig. 8 is used.to measure [p.

While observing th~ meter, the potentiometer

setting is slowly increased until the UJT fires, as

ELECTRONIC DESIGN

r-----------...------0 + 20V :t 0.5V
IOK

0.2µ.F~5%

r--n
tJL
20± 1%

....---------------.--<>+ I0-30V
IOOK 20µ.A
0.2

7. Base-one peak-pulse voltage may be measured by putting a scope across RBi· This simple circuit may be used to compare the pulse capabilities of different UJTs. For SCR triggering, a large pulse is desirable.

8. Peak-point emitter current is measured with this cir·
cuit. R1 is increased until a jump in reading is observed on the meter. The current reading just before the jump
is the peak-point emitter current:

evidenced by a sudden jump and oscillation of the meter needle. The current reading just prior to the jump is the peak-point current.
a The emitter reverse current (IEo), similar to
I co in conventional transistor, can be measured by applying a voltage between base-two and the emitter, with base-one open-circuited. Unijunction transistors that have a guaranteed low [p value generally also have a low leakage current. The stability of a UJT is improved as the ratio of the average capacitance-charging current to I Eo is increased.
The interbase resistance (RBso) is the resistance measured between base-one and base-two, with the emitter open-circuited. By using devices that have a higher R 880 rating, power dissipation can be decreased. This is important when higher values of interbase voltages are being used and the interbase power dissipation becomes an appreciable part of the total power dissipation. Since the interbase resistance has a positive tem-
perature coefficient of 0.8 %/ °C, this characteris-
tic can be used either for temperature compensation or in the design of temperature sensitive circuits. The value of the interbase resistance can be measured with any conventional ohm meter or resistance bridge, if the applied voltage is kept at fiv~ volts or less.
The emitter saturation voltage (VE(sAr;) indicates the forward drop from emitter to baseone when the device is in the saturation region. Generally, it's measured at an emitter current of 50 .mA and an interbase voltage of 10 volts. A low value of emitter saturation voltage will permit the generation of higher amplitude sawtooth voltages and also allow the use of lower supply voltages. In general, the higher the Vos1 rating a unij unction transistor has, the lower the saturation voltage will be.
The emitter reverse voltage (V Es2) is the maximum voltage rating for the emitter junction. This rating should never be exceeded and thus restricts the choice of device to one that is compatible with the supply voltage being used.
Data list simplifies selection
Type 1-The UJT is an excellent trigger source.
May 17, 1966

for firing silicon-controlled-rectifiers (SCR), silicon-controlled-switches (SCS), and triode-aeswitches (Triac). The trigger pulse generated rnay represent frequency control, time delay, amplitude level change, or phase control. The base-one peak pulse voltage, V0 8 1, is the key parameter for these applications. ·The most desirable UJT types are those with the highest value of guaranteed minimum Vasi· Unij unction transistors that feature high values of VoB i ·are especially useful for triggering the higher-current SCRs. They .are also preferred in circuits where the trigger supply voltage is low or where the size of the oscillator capacitance is limited. Many of the specification sheets will have trigger-circuit design curves which assure SCR triggering over a temperature range.
The minimum Iv specification should also be considered. High values of this parameter enable the circuit designer to use a low resistance for Rr without running into a "latch-on" problem. The lower value of Rr also increases the average charging current to the capacitance Cr; this minimizes the effect of the temperature-sensitive leakage currents in the charging circuit.
Type 2-In designing circuits for high-frequency-control, short-timing-period and voltage-sensing applications, the minimum value of I v, the valley current, is the key parameter.
Higher Iv ratings allow the use of lower values of Rr·· The result is a faster response time for any given capacitor size. Also, where large· pulse outputs are required, the capacitor value may be increased. Finally, since Iv decreases with supply voltage, the higher Iv ratings are an advantage for low-supply-voltage applications.
Type 3-In low-frequency-control, long-timingperiod, and current-sensing applications, the maximum value of Ip, the peak-point current, is the key design parameter. A low /p permits longer time constants (Rr Cr) in the emitter circuitry. This enables the designer to use smaller charging capacitors for a given timing period. These, in turn, will have lower leakage figures. Also, as the supply voltage decreases, the lower [prating helps to maintain a lower trigger-current requirement. This is an advantage in timing and level-sensing. · ·
117

Unijunction

Type 1. Pulse Generation <e.g., SCR Triggering>: In order of increasing values of v081

Type Number

Orig. Reg.

Type

Yoa1 [min] (volts)

ly [min] (mA)

VEB2 [max] (volts)

T/ [min-max]

Raso [min] (kil)

2N489A 2N490A 2N491A 2N492A 2N493A

GE

pn,si

GE

pn,~i

GE

pn,si

GE

pn,si

GE

pn,si

3.0

8.0

60

0.51-0.62 4.7

3.0

8.0

60

0.51-0.62 6.2

3.0

8.0

60

0.56-0.68 4.7

3.0

8.0

60

0.56-0.68 6.2

3.0

8.0

60

0.62-0.75 4.7

2N494A

GE

pn,si

3.0

8.0

60

0.62-0.75 6.2

UJT
1

2N1671A 2Nl671B 2N2160

Tl GE GE

pn,si n,si pn,si

3.0

8.0

30

0.47-0.62 4.7

3.0

8.0

30

0.47-0.62 4.7

3.0

8.0

30

0.47-0.80 4.0

2N2646

GE

pn,AE,si

3.0

4.0

30

0.56-0.75 4.7

SJ1034 SJ5898 2N2647 SJ 1158 SJ1159

Tl

pn,si

Tl

pn,si

GE

pn,si

Tl

pn,si

Tl

pn,si

3.0

-

30

0.50-0.80 4.0

3.0

2.0

30

0.55-0.80 4.0

6.0

8.0

30

0.68-0.82 4.7

6.0

3.0

30

0.56-0.85 4.0

6.0

4.0

30

0.65-0.85 4.7

Ip
[max] (µA)
12.0 12.0 12.0 12.0 12.0
12.0 25.0 6.0 25.0 5.0
-
5.0 2.0 5.0 2.0

IEo [ma;ic:] (µA)
2.0 2.0 2.0 2.0 2.0
2.0 2.0 0.2 2.0 12.0
15.0 0.01 0.20 0.01 0.01

VE(SAT) [max] (volts)

Alternate Sources and
Remarks

4.0

Tl, T0-5

4.0

Tl, T0-5

4.3

Tl, T0-5

4.3

Tl, T0-5

4.6

Tl, T0-5

4.6 5.0
5.0
-
2.0 (typ)

Tl, T0-5
Tl, T0-5 MO, Tl

-
4.0 2.0 (typ)
4.0 4.0

T0-5 T-69 (Plastic Planar)
T0-18 (Planar) T0-18 (Planar)

Ty~e 2. High-Frequency Control, Voltage-sensing, Frequency Dividing and Short Timing Periods: In order of increasing values of Iv

Type Number
2N3980 SJ993 SJ1127 2N489
UJT 2N490
2 2N491 2N492 2N493 2N494 2Nl671

Orig. Reg.
Tl Tl Tl GE GE
GE GE GE GE Tl

Type
pn,AE,si pn,si pn,si pn,si pn,si
pn,si pn,si pn,si pn,si pn,si

Iv [min] (mA)

T/ [min-max]

Raso [min] (kil)

1.0 0.68-0.82 4.0 4.0 0,56-0.75 4.7 8.0 0.68-0.82 4.7 8.0 0.51-0.62 4.7 8.0 0.51-0.62 6.2

8.0 0.56-0.68 4.7 8.0 0.56-0.68 6.2 8.0 0.62-0.75 4.7 8.0 0.62-0.75 6.2 8.0 0.47-0.62 4.7

IEO [max] (JiA)
0.01 0.01 0.01 2.0 2.0
2.0 M 2.0 2.0 12.0

Ip
[max] (J1A)
2.0 5.0 2.0 12.0 12.0
12.0 12.0 12.0 12.0 25.0

VE(SAT) [max] (volts)

VEB2 [max] (volts)

3.0

30

4.0

30

4.0

60

5.0

60

5.0

60

5.0

60

5.0

60

5.0

60

5.0

60

5.0

30

Voa1 [min] (volts)
6.0 3.0 6.0
-
-
-
-

Alternate Sources and
Remarks
MO T0-18 (Planar) T0-18 (Planar) Tl, T0-5 Tl, T0-5
Tl, T0-5 Tl, T0-5 Tl, T0-5 Tl, T0·5 T0-5

Type 3. Low-Frequency Control, Long Timing-Periods anrt Current-Sensing: In order of decreasing values of Ip

Type Number
2N489B 2N490B 2N491B 2N492B 2N494B
UJT 2N495B
3 2N1671B 2N490C 2N492C 2N494C
2Nl671C 2N2647 2N3980

Orig. Reg.
GE GE GE GE GE
GE Tl GE GE GE
GE GE Tl

Type
pn,si pn,si pn,si pn,si pn,si
pn,si pn,si n,si n,si pn,si
pn,si pn,si pn,si

Ip [max] (1iA)
6.0 6.0 6.0 6.0 6.0
6.0 6.0 2.0 2.0 2.0
2.0 2.0 2.0

IEo [max] (1lA)

T/ [min-max]

Voa1 [min] (volts)

Raso [min] (kn)

Iv [min] (mA)

VE(SAT) [max] (volts)

VEB2 [max] (volts)

Alternate Sources and
Remarks

2.0

0.51-0.62 3.0

4.7

8.0

4.0

60

Tl, T0-5

2.0

0.51-0.62 3.0

6.2

8.0

4.0

60

Tl, T0-5

2.0

0.56-0.68 3.0

4.7

8.0

4.3

60

Tl, T0-5

2.0

0.56-0.68 3.0

6.2

8.0

4.3

60

Tl, T0-5

2.0

0.62-0.75 3.0

6.2

8.0

4.6

60

Tl, T0-5

2.0

0.62-0.75 3.0

4.7

8.0

4.6

60

Tl, T0-5

0.20

0.47-0.62 3.0

4.7

8.0

5.0

30

GE, T0-5

0.02

0.62-0.91 3.0

6.2

8.0

4.0

60

0.02

0.62-0.91 3.0

6.2

8.0

4.3

60

0.02

0.62-0.75 3.0

6.2

8.0

4.6

60

Tl, T0-5

0.02

0.47-0.62 3.0

4.7

8.0

5.0

60

0.20

0.68-0.82 6.0

4.7

8.0

2.0 (typ)

30

MO, T0-18 (Planar)

0.01

0.68-0.82 6.0

4.0

1.0

3.0

30

T0-18 (Planar)

(see pages 4-9 for explanation of company abbreviations.)

118

ELECTRONIC DESIGN

AND
STRIP!
Our new Mallinckrodt photoresist stripper needs no added chemicals, and it works hot or cool.
Here's the organic stripper that eliminates the mess of mixing and, in many cases, the need for heating. New Photostrip 66 TransistAR®. You just pour it out and put it to work at room temperature. Or heat it up where the application requires. ·
Photostrip 66 is non-flammable ·and non-alkaline. It softens and removes resist quickly, without attacking aluminum deposits on your silicon.
Give our new Photostrip 66 a whirl. It works beautifully and it's a step faster than anything you've ever used before. For product data, write Electronic Chemicals, Mallinckrodt Chemical Works, St. Louis, Mo. 63160.

·$ffilfl@.!.[9 MAL~INCKRODT CH EM ICAL WORKS/ Electronic Chemicals
m · · - · · · r@ St. Louis · New York · Los Angeles

May 17, 1966

ON READER-SERVICE CARD CIRCLE 29

119

120

ELECTRONIC DESIGN

Siemens
MKH
metallized polyester capacitors

t
SIEMENS

Small size and high reliability are new standards set by Siemens capacitors. Twenty years' experience in making metallized capacitors has resulted in advanced precision techniques which closely control every capacitor property, making them 100% "foolproof" in service.
Less than one breakdown (self-healing) per year and per mF - that is the consistent average shown by tests at nominal voltage.
Two-way self-healing gives double protection. Internal voltage breakdown very rarely occurs. If it does, the thin metal coatings at the breakthrough point, vaporize immediately, eliminating the breakthrough point within microseconds.
Electrochemical self-healing is the second protective process. It starts whenever and wherever insulation resistance decreases in the dielectric material and operates at any voltage, eliminating the point electrically.

Highly stable capacitance. Overload tests (at 2.2 nominal voltage and at 85 °C) show negligible change of characteristics.
Small size-MKH (metalliz~d polyester) capacitors are available with axial or radial leads, in flat compact form. Leads soldered to metallized ends ensure reliable contact.
MKH properties. Operating temperatures: -40 ° to +125 °C (for 1000 hours), +100 °C for continuous operation. Insulation resistance: 20,000 megohms or 10,000 megohms X mF, whichever is lower. Dissipation factors: ·0.5% at 1 kc; 1.5% at 10 kc (typical values).
Immediate shipment: Substantial stocks are held in White Plains, N. Y.
Write now for full information on Metallized Polyester Capacitors.

SIEMENS AMERICA INCORPORATED Components Division 230 Ferris Avenue, White Plains, N. Y.
tn canada: SIEMENS CANADA LIMITED
407 McGill Street. Montreal 1, P.Q.

May 17, 1966

ON READER-SERVICE CARD CIRCLE 30

121

How To Use The Cross Index

2N35 2N94 2N94A 2Nl02 2Nl04 2Nl09 2Nll7 2Nll8 2Nll9 2Nl20
2Nl22 2Nl28 2Nl39 2Nl40 2Nl44 2Nl56 2Nl58 2Nl58A 2Nl69 2Nl73
2Nl74 2Nl74A 2Nl75 2Nl76 2Nl78 2N211 2N212 2N213 2N213A 2N214
2N215 2N217 2N218 2N219 2N219A 2N220 2N231 2N233 2N233A 2N234A
2N235A 2N235B 2N236A 2N236B 2N243 2N244 2N250A
122

Types are listed in numerical sequence. EIA-registered types come first, followed by house-numbered types. The code following each type identifies its application category and the block of 10 types in which it is located. A3, for example, means the type can be found in the third block of the
= Audio section. Key to the letter codes is: A audio and = = general-purpose, P power, HF high-frequency, LL = = low-level switching, HL high-level switching, FET = = field-effect, UJT unijunction.

A49 HF2 HF3
A4 A23 A32
A4 Al2 A24 A37
P22 HF17
HF3 HF8 HF94 P31 P31 P31 A27 P84
P84 P84 A30 P64 P64 HF3 HF3 A32 A40 A25
A23 A32 HF3 HF8 HL36 A30 HF94 HF2 HF2 P34
P34 P34 P54 P54 A7 Al7 P64

2N251A 2N257 2N262
2N268 2N268A 2N270
2N274 2N277 2N278 2N279 2N280 2N281 2N282
2N284 2N284A 2N28SA 2N285B 2N297A 2N301 2N301A 2N306
2N315 2N315A
2N315B 2N316 2N316A 2N317 2N317A 2N326
2N327A 2N328A 2N328B 2N239
2N329A 2N329B 2N330A 2N331 2N332 2N332A
2N333 2N333A 2N334 2N335
2N335A 2N336 2N336A

P64 P64 HF94
P64 P64 A31 HF12 P85 P85 Al4 A24 A31 A31
LL37 LL37 P34 P34 P64 P26 P26 Al4
LL6 LL6
LL6 LU2 LU2 LU5 LU5 P22
LU LLl LU LU
LU LL2 Al2 A50 A4 A3 Al2 AS Al9 A24
Al9 A38 A34

2N337 2N337A 2N338 2N338A 2N339 2N339A 2N340
2N340A 2N341 2N341A 2N342 2N342A 2N342B 2N343 2N343A 2N343B 2N344
2N345 2N346 2N350A 2N351A 2N356 2N356A 2N357 2N357A
2N358 2N358A 2N370 2N371 2N372 2N374 2N375 2N376A 2N384 2N388 2N388A 2N389
2N393 2N398 2N398A 2N399 2N400 2N401 2N404 2N404A
2N405 2N406

LL37 LL13 LL37 LU6
P2 Al2
P2
Al2 P2
Pl, Al2 P2 P2 P2 P2 P2 P3
HF12
HF12 HF20
P64 P64 LL4 LL4 LL7 LL7 LUl LUl HF20 HF13 HF13 HF94 P65 P65 HF30 LL6 LL7 P61
HF15 LL37 LU8 P34 P45 P34
LL5 LL6
Al7 Al7

2N407 2N408 2N409 2N410 2N411 2N412 2N414 2N418 2N419 2N420
2N420A 2N424 2N424A 2N426 2N427 2N428 2N441 2N442 2N443 2N444
2N444A 2N445 2N445A 2N446 2N446A 2N447 2N447A 2N447B 2N449 2N456A
2N456B 2N457A 2N457B 2N458A 2N458B 2N463 2N470 2N471 2N471A 2N472
2N472A 2N473 2N474 2N474A 2N475 2N475A

A30 A30 HF5 HF5 HF8 A32 LUO HL40,P34 P35 HL40,P35
HL40,P35 P61
HL41 LL4 LL7
LUl P85 P85 P85 HFl
HFl HF2 HF2 HF3 HF3 HF8 HF8 HF8 A27 P51
HUS P51
HUS P52
HUS P52 A4 A4 HF6 A4
A4, HF6 HF6 HF6 HF7 HF7 HF7

ELECTRONIC DESIGN

There is no adhesive like EASTMAN ~
~nMAN 910"
910®
Adhesive

SETS FAST-Makes firm bonds in seconds to minutes. VERSATILE-Joins virtually any combination of materials. HIGH STRENGTH- Up to 5,000 lb./in.2 depending on the materials. READY TO USE-No catalyst or mixing necessary. CURES AT ROOM TEMPERATURE- No heat required to initiate or
accelerate setting. CONTACT PRESSURE SUFFICIENT. LOW SHRINKAGE-Virtually no shrinkage on setting as neither sol-
vent nor heat is used. GOES FAR-One pound contains about 30,000 one-drop applications.
(Or in more specific terms, approximately 20 fast setting one-drop applications for a nickel).
The use of EASTMAN 910 Adhesive is not suggested at prolonged temperatures above 175°F., or in the presence of extreme moisture for prolonged periods.

SHEAR STRENGTH OF BONDS

Bond Type Aluminum-
Aluminum
Steel-Steel
Aluminum-Steel
Butyl RubberButyl Rubber
Butyl RubberSteel
Butyl RubberAluminum
SBR RubberSBR Rubber

Tim· to Firm Set (minutes)

Representative Shear Strength t
(psi)

2

1,484

2,188

2,700

2

-=- T

2,800 {Tensile) 1,362

2,224

2,800

5,030 {Tensile)

10
112
(with surface activator*)

84 173 1,007 1,653

112

511

63

1

521

761

1

731

591

lh

901

561

881

Neoprene Rubber-

lh

Neoprene Rubber

Natural Rubber·

lh

Natural Rubber

SBR Rubber-

¥2

Butyrate

SBR Rubber-

112

·Phenolic

Butyl-

lh

Polyester

541 45 461 39 951 1101 112 1
1051 1101 1021 154

Age of Bond
10 mins. ·1 hr. 48 hrs. 24 hrs.
10 mins. 1 hr.
48 hrs. 4& ~rs.
10 mins. 1 hr.
10 mins. 1 hr.

.-,

10 mins. 4 yrs.2
10 mins. 4 yrs.2
10 mins. 4 yrs.2
10 mins. 4 yrs.2
30 days, salt spray cycle {ASTM B 117-57T)
10 mins. 4 yrs.2
10 mins. 4 yrs.2
10 mins. 2 yrs.2
30 days, salt spray cycle
{ASTM Bl17-57T)
10 mins. 2 yrs.2
15 mins. 2 yrs.2

Bond Type Butyl-
Phenoli c Neoprene-
Polyester Nylon-Nylon
Nylon-Aluminum
Phenolic-Phenolic
Phenolic· Aluminum
Polyester· Stainless Steel
Acrylic· Stainless Steel
Flexible VinylAluminum
Polystyrene· Polystyrene
Polypropylene· Polypropylene

Time to Firm Set (minutes)
112 1/2
2
112
{with surface activator*) 2 2 1/2
{with surface activator*)

Representative Shear Strengtht
(psi)
1141 1781
1121 136
327 1,400
500 1,436
956 1,024
747 6003
647 920 348
696 664 432
6203 4843 488
2073 1923 2003
327 70
4473
180 4113 (Flame treated polypropylene) 401 3 {Flame-treated polypropylene)

Age of Bond
15 mins. 2 yrs.2
15 mins. 2 yrs.2
10 mins. 48 hrs.
10 mins. 48 hrs.
1 yr." 2 yrs."
10 mins. 4 yrs."
10 mins. 48 hrs.
2 yrs."
48 hrs. 6 mos." 2 yrs."
6 mos." 1 yr." 2 yrs."
6 mos." 1 yr." 2 yrs."
10 mins. 1 yr.2
10 mins.
24 hrs. 24 hrs.
15 mins.

t Laboratory test results

1rubber failure

2weathered outdoors

3plastic failure

'450% Relative Humidity and 75°F.

*In certain cases, most notably those involving polystyrene , pickled or dissimilar metal surfaces, bonding with EASTMAN 910 Adhesive is sometimes slow. EASTMAN 910

Surface Activator is designed to restore the rapid polymerization of the adhesive. It is also quite valuable in maintaining consistent results in production line bonding

situations. Further information on this product is available.

Other materials that cap. be bonded successfully with EASTMAN 910 Adhesive are: polyurethanes, acetal resins; most hard woods; brass, copper. Recent work indicates that

polyolefin and acetal plastic bonds are significantly improved by flame treatment of the plastic material prior to bonding (shear strengths up to 500 psi).

If you have applications in which extreme speed of setting is needed, or where design requirements involve small joining surfaces,

complex mechanical fasteners, or heat sensitive assemblies, EASTMAN 910 Adhesive may save you many man-hours of production

time. Send $10 for a trial kit to use on your toughest bonding job. Kits and further information are available from Armstrong Cork Co., Industry Products Division, Lancaster, Pennsylvania, or from Chemicals Division, EASTMAN CHEMICAL PRODUCTS, INC., subsidiary

of Eastman Kodak Company, Kingsport, Tennessee.

See Sweet's 1966 Product Design File Ba/Ea.

May 17, 1966.

ON READER-SERVICE CARD CIRCLE 31

123

2N476 2N477 2N47B 2N479
2N479A 2N4BO 2N4BOA 2N4B9 2N4B9A 2N4B9B 2N490 2N490A 2N490B 2N490C
2N491 2N491A 2N491B 2N492 2N492A 2N492B 2N492C 2N493 2N493A 2N494
2N494A 2N494B 2N494C 2N495 2N495B 2N496 2N497 2N497A 2N49B 2N49BA
2N499 2N499A 2N501 2N501A 2N502 2N502A 2N502B 2N503 2N504 2N50BA
2N511 2N511A 2N511B 2N512 2N512A 2N512B 2N513 2N513A 2N513B 2N514
2N514A 2N514B 2N515 2N516 2N517 2N519 2 N519A 2 N52 0 2N521 2 N5 22 2 N5 22 A 2 N523 2 N523 A 2N524A 2 N525A 2N526A 2 N52 7A 2 N528A 2N529 2N530
2N531 2N532 2N533 2N538
124

HFlO HFlO HFll HFll
HFll HFll
A21 UJT2 UJTl UJT3 UJT2 UJTl UJT3 UJT3
UJT2 UJTl UJT3 UJT2 UJTl UJT3 UJT3 UJT2 UJTl UJT2
UJTl UJT3 UJT3 HF7 UJT3 HF12 P14 P15 P14 P15
HF57 HF57 HF29 HF39 HFBO HFB5 HFB6 HF70 HF17 ·A39
PB5 PBS PB5 PB5 P85 P86 P86 PB6 P86 P86
P86 P86 HF2 HF2 HF3 LL2 LL2 LL5 LUO LL13 LU3 LU6 LU6 LU6 LU6 LU7 LU8 LL5 A7 All
A14 A15 A18 P44

2N53BA

P44

2N539

P44

2N539A

P44

2N540

P44

2N540A

P44

2N541

HFB

2N542

HF9

2N542A

HF9

2N543

HF9

2N543A 2N545

A35 HL26

2N546 2N547

HL26 HL26

2N54B 2N549

HL26 HL27

2N550

HL27

2N551

HL26

2N552

HL26

2N554

P5B

2N555

P5B

2N563

A13

2N564

Al3

2N565

A27

2N566

A27

2N567

A3B

2N56B

A3B

2N569

A42

2N570

A42

2N571

A45

2N572

A46

2N574

P9B

2N574A

P9B

2N575

P9B

2N575A

P98

2N579

LUO

2N5BO

LU3

2N5Bl 2N5B2 2N5B3 2N5B5 2N5B6 2N5BB 2N591 2N594 2N595 2N596

LUO, H.F7
LU5, HFl 1 LUO LL5 LL37 HF49 A31 LL4 LL5 LL7

2N602 2N603 2N604 2N605 2N606 2N607 2N61B

HF9 HF13 HFlB HF18 HF18 HFlB
HL2

2N627

P65

2N628

P65

2N629

P65

2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N647 2N649 2N650 2N650A

HL41, P65 HL41 , P65 HL41 , P65 HL41, P65 HL41 , P65 HL41 , P66
A31 A30 A16 A16

2N651

A26

2N651A

A26

2N652

A39

2N652A

A39

2N653

A16

2N654

A26

2N655

A40

2N656 HL41 , P14, HF94

2N656A

P15

2N657 HL41 , P14, HF95

2N657A

P15

2N658

A14

2N659

A22

2N660

A30

2N661

A34

2N662

A14

2N663

P46

2N665

P46

2N669

P66

2N677

P66

2N677A

P66

2N677B

P66

2N677C

P66

2N67B

P52

2N67BA

P52

2N67BB

P52

2N67BC

P52

2N696 HL32 , P7 , HF27

2N697

P7,HF30

2N69B HL2B, P12, HF21

2N699 HL32, P7, HF27

2N699B

P15

2N700 2N700A

HFBO HF90

2N702 2N703 2N705

LL22 , HF43 LL22, HF43
LL37

2N706 LL30 , P3, HF74

2N706/51

HF49

2N706A LL31 , HF95

2N706A/51

HF49

2N706B LL31 , HF74

2N706B/46

HF49

2N706B/51 2N706C/46

HF49 HF49

2N706C/51

HF49

2N707 LL31, P3, HF74

2N707A

LL37

2N70B . HL39, LL31, P3, HF75

2N709 LL35, Pl, HFB7

2N709/46 2N709/51 2N709A 2N709A/46 2N709A/51

HFB4 HFB4 HFBB HF8B HFBB

2N710 2N711 2N711A 2N711B

LL37, HF95 LL38 LL38 LL38

2N715

HF95

2N716

HF95

2N717 HL30, P5,HF21

2N718 HL33, P5,HF27 2N718A HL33 , P6, HF27 2N719 HL30,P5,HF21 2N719A HL30 , P6, HF21

2N720 HL33,P6,HF28

2N720A HL30, P6, HF21

2N721 2N722

HL31, P6 HL34, P6

2N725

LL38

2N726

A5

2N727

A14

2N728

HF30

2N729

HF30

2N730

HL42

2N731

HL42

2N734

A9

2N735

A19

2N735A 2N736

HF47 A34

2N736A

A2B

2N736B

HF49

2N738 2N739 2N739A

A9, HF95 A19, HF95
HF47

2N740 2N740A

A35, HF95 HF50

2N741

HF73

2N741A 2N742

HF74 LL31

2N743 2N743/46 2N743/51

HF96 HFB9 HFB9

2N744 2N744/46 2N744/51 2N752 2N753 2N754 2N755

LL3B, HF96 HFB9 HFB9 HF50 HF96 HF13 HF13

2N756

A5

2N756A

A5

2N757

AB

2N75B

AB

2N758A

A9

2N75BB

HF43

2N759

A19

2N759A

A19

2N759B

Hf47

2N760

A34

2N760A 2N760B 2N76B

A34 HF50 HF40

2N769

HFB4

2N779A

HF70

2N7BO

A17

2N7Bl 2N7B2

LL3B,HF96 LL3B, HF96

2N7B3 2N7B4

Hf50 HF65

2N7B4A

LL27, HF65

2N7B4/51

HF65

2N794

LU 7, HF15

2N795 2N796

LU7, HF15 LUB, HFlB

2N797

LL3B, HF96

2NB27

LL25

2N82B 2NB2BA 2NB29

LL31, HF75 HF75 HF75

2N834

LL29, HF7B

2NB34/46

HF71

2N834/51

HF71

2NB35 LL27, HF65, BO

2NB35/46 2N835/ 51

HF65 HF65

2N838 2N840

LL27 HF13

2NB41

HF15

2N842

LU6, HF13

2N843

LU 7, HF16

2N844 2N845 2N846A

HF18 HFlB HF70

2N849 /Tl-430 LL3B,

2N850/Tl-431

HF96 LL3B,

HF96

2NB51 /Tl-422

LL3B , HF96

2N852/Tl -423 LL39,

HF96

2N858

LL7

2N859

LL7

2N860 2N861 2N862 2N863 2N864 2N865 2N869 2N869A

LL9 LL9 LUl LUl LU4 LU6 P3, HF50 HF83

2N870 HL33 , P7 , HF28

2N871 HL35, P7 HF30

2N909

HL31

ELECTRONIC DESIGN

2N910 HL33,P7,HF28

2N911 HL32,P7,HF23 2N912 HL31, P7, HF21

2N914

P4,HF72

2N914/46 HL22, LL27,

HF65

2N914/51

HF65

2N915 HL38, P4, HF66

2N916 HL39, P4, HF75

2N917 A24, HL40, LL35,

HF88

2N918 A24, LL36, HF89

2N923

A5

2N924

A12

2N925

A4

2N926

All

2N927

Al

2N928

A8

2N929

A28,HF97

2N929A

HF57

2N930

A42,HF97

2N930A

HF64

2N934

A19

2N935

A2

2N936

A7

2N937

A18

2N938

A2

2N939

A7

2N940

A18

2N941

LL14

2N942

Llll

2N943

LL3

2N944

LL3

2N945

LL3

2N946

LL3

2N947 HL38, P4, HF57

2N955

HF90

2N955A

LL36

2N956

HF30

2N957 A28, P2, HF57

2N960

LL33, HF79

2N961

LL33, HF79

2N962

HF79

2N963

HF66

2N964

LL33, HF79

2N964A

HF79

2N965

LL33, HF79

2N966

LL33, HF79

2N967

HF66

2N968

HF70

2N969

HF70

2N970

HF70

2N971

HF70

2N972

HF70

2N973

HF71

2N974

HF71

2N975

HF71

2N976 2N978

HF84 HL31, P4

2N979 2N980

HF30 HF30

2N982

HF78

2N983

HF78

2N984

HF72

2N985

LL39, HF97

2N987

HF31

2N988

HF66

2N989

HF66

2N990

HF26

2N993

HF26

2N995

P4,HF43

2N996

P4,HF57

2N997

A49

2N998

HF97

2N999

LL39

2Nl000

LL9

2N1010

A17

2N1011

HL42, P45

2N1012

LL5

May 17, 1966

I
Simultaneous Mass Attachment 01 comoonent3 means LOWER COST Hybrid Film Microcircuits
Mepco's S.M.A.C. technique eliminates many of the slow, costly individual handling
and joining processes that had been required to produce high quality film hybrid
microcircuits. This technique results in lower production costs for custom designed
hybrid microcircuits. This means lower costs to you!

If your programs call for custom-designed film hybrid microcircuits, in high volume, at lower costs, and with faster delivery dates than you thought possible, then be sure to
call Mepco ... Ask about S.M.A.C. Find out how this new breakthrough in
mass-producing film hybrid microcircuits can benefit your production plans.

MEPCO
I
MEPCO, INC.

COLUMBIA ROAD, MORRISTOWN, NEW JERSEY

07960

(201) 539-2000

MANUFACTURERS OF PRECISION ELECTRONIC DEVICES

ON READER-SERVICE CARD CIRCLE 32

125

2N1014 2N1015 2Nl015A 2N1015B 2N1015C
2N1015D 2N1015E 2N1016 2Nl016A 2N10168 2N1016C 2N1016D 2Nl016E 2N1021 2N1022
2N1023 2N1024 2N1025 2N1026 2N1027 2N1028 2N1031 2N1031A 2N10318 2Nl031C
2N1032 2N1032·A 2N10328 2N1032C 2N1034 2N1035 ZN1036 2N1037 2N1038 2N1039
2N1040 2N1041 2N1042 2N1043 2N1044 2N1045 2N1046 2N1046A 2N10468 2N1047
2N1047A 2N10478 2N1047C 2N1048 2N1048A 2N10488 2N1048C 2Nl049 2N1049A 2N10498 2N1049C 2N1050 2N1050A 2Nl0508 2N1050C 2N1051 2N1052 2N1054 2N1055 2N1058
2N1059 2N1060 2N1065 2N1066 2N1067 2N1068 2N1069 2N1070 2N1073A 2N10738
2N1079 2Nl080 2Nl082
126

P52' Hlll Hlll Hlll Hlll, P86
Hlll Hlll HL12 HL13 HL13 HL13 Hl-13 HL13
P52 P52
HF39 A2 A2 A7 A7 A2 P66 P66 P66 P66
P67 P67 P67 P67 LL2 LL2 LL2 LL2 HL42 HL42
HL42 HL42
P31 P31 P31 P31 HL42 HL42 HL42 P47
P47 P47 P47 P47 P48 P48 P48 P48 P48 P48 P48 P48 P49 P49 P49 A17, LL5 HF97 HF7 HL26 HF3
A25 LL16 HF12 HF39 P15 P23 P52 P53 HL43,P54 HL43,P54
P54 P55
A4

2N1086 2N1086A
2N1087 2N1090 2N1087 2Nl091 .
2N1097 2N1098 2N1099 2N1100 2N1101 2N1102 2N1116 2N1117 2N1118 2N1118A
2N1119 2N1120 2N1121 2N1122 2N1122A 2N1131 2N1131A 2N1132 2N1132A 2N11328
2N1136 2N1136A 2N11368 2N1137 2N11378 2N1138 2N1138A 2N11388 2N1139 2N1141
2N1141A 2N1142 2N1142A 2N1143 2N1143A 2N1144 2N1145 2N1146 2N1146A 2N11468
2N1146C 2Nl 147 2N1147A 2N11478 2N1147C 2N1149 2N1150 2N1151 2N1152 2N1153
2N1154 2N1155 2N1156
2N1157 2N1157A 2N1162 2N1162A 2N1163 2N1163A 2N1164
2N1164A 2N1165 2N1165A 2N1166 2N1166A 2N1166A 2N1167 2N1167A 2Nl169 2N1170

A45 A45
A45 LL7, HF4
A45 LL3
A28 A28
P86 P86 A15 A16 HL27
HL22
HF7 HF7
LL9 P51 A28
HF16 HF16 HL32, PB
LL18 HL35, PB
LL18 LL19
P67 P67 P67 P67 P67 P67
P68 P68 LL19 HF97
HF97 HF97 HF97 HF98 HF98
A36 A36
P68 P68 P68 ·
P68 P68 P68 P68 P68 A5 A12 A19
A24 A38
A2 A2 A2
P98 P99 P69 P69 P69 P69 P69
P69 P69 P69 P69 P69
P70 P70 P70 LL6 ll6

2N1175A

A32

2N1177

HF42

2N1178

HF42

2N1179

HF42

2N1180 2N1183

HF31 P22

2N1183A

P22

2N1183B

P22

2N1184

P22

2N1184A

P22

2N1184B

P22

2N1185

A45

2N1186

A16

2N1187

A26

2N1188

A39

2N1189

A33

2N1190

A41

2N1191

A16

2N1192

,A23

2N1193

A40

2N1194

A45

2N1195

LL34, HF83

2N1202

P44

2N1203

P44

2N1204

LL21

2N1204A 2N1206 2N1207 2N1208

LL21 P12, HF9 Pl2, HF9
HL43

2Nl209

HL43

2N1210

P55, 61

2N1211

P55

2Nl212 2N1216 2N1218 2Nl219 2N1220 2N1221

HL26 LL39 P35
AB A2 ,AS

2N1222

.A2

2N1223

Al

2N1224 2N1225 2N1226 2N1228 2N1229 2N1230 2N1231 2Nl232 2N1233 2N1234

HF13 HF31 HF13 LL39 LL39 LL39 LL39 LL39 LL40 LL40

2N1235

P61

2N1238 2N1239 2N1240 2N1241 2N1242 2N1243 2N1244 2N1247

HL43 HL43 HL43 HL43 HL43 HL44 HL44 HF98

2N1248

A5

2N1251

A32

2N1252 HL33, LU 9, P8,

HF28 2N1253 HL36, LL21, P8,

2N1254 2N1255 2N1256 2N1257

HF39 LL19 LL19 LL19 LL19

2N1258 2N1259

LL19 LL20

2Nl260

P61

2N1261

P45

2N1262

P45

2N1263

P45

2N1273

A9

2N1274

A9

2N1275

ll2

2N1276

LL13

2N1277

LL13

2N1278

LL13

2N1279

LL14

2N1300 LL17, HF16

2N1301 2N1302 2N1303 2N1304 2N1305 2N1306

LL17, HF21 LL40 LL40 LL40 LL40 LL40

2N1307

LL40

2N1308

LL40

2N1309

LL40

2N1309A 2N1310 2Nl311 2N1312 2N1319 2N1335 2N1336

LL14 A9 A6 A9 LLB
PIO, HF23 PlO, HF23

2N1337 2N1338 2N1339

PlO, HF23 PlO, HF23 PlO, HF23

2N1340 2N1341 2N1342

Pll, HF24 Pll, HF24 Pll, HF24

2N1358

P87

2N1359

P70

2N1360

P70

2N1362

P70

2N1363

P70

2N1364

P70

2N1365

P70

2N1370

A20

2N1371

A20

2N1372

A9

2N1373

A9

2N1374

A20

2N1375

A20

2N1375

,A20

2N1376

A28

2N137T

A28

2N1378

A33

2N1379

A33

2N1380

A9

2N1381

AlO

2N1382

A20

2N1383

AlO

2N1384

LL15

2N1391

HF2

2N1392

A50

2N1393

A50

2N1394

A3

2N1395

HF13

2N1396

HF31

2N1397 2N1404

HF39 LL41

2N1404A

LL41

2N1408

A3

2N1409

HL15, Pll,

HF16, 18

2N1410

HL15, P11,

HF16, 18

2N1411

HF12

2N1412

P87

2N1412USN

P87

2N1413

A20

2N1414

A28

2N1415

A35

2N1417

HF15

2N1418

HF15

2N1420 HL35, P8, HF31

2N1427

HF18

2N1429 2N1430 2N1431 2N1439

HFll P5.3, 59
A33 Al

ELECTRONIC DESIGN

2N1440 2N1441 2N1442
2N1443 2N1444 2N1445 2N1469 2N1474
2N1474A 2N1475 2N1476 2N147T 2N1479 .
2N1480 2N1481 2N1482
2N1483 2N1484 2N1485 2N1486
2N1487 2N1488 2N1489
2N1490 2N1491 2N1492 2N1493 2N1494 2N1494A 2N1495 2N1496 2N1499 2N1499A 2N1499H 2N1500 2N1501 2N1502 2N1505 2N1506 2N1506A 2N1507 2Nl510 2N1511
2N1512 2N1513 2N1514
2N1518 2N1519 2N1520 2N1521 .2N1522 2N1523
2N1524 2N1525 2N1526 2N1527
2N1529 2N1529A
2N1530 2N1530A 2N1531 2N1531A
2N1532 2N1532A 2N1533 2N1534 2N1534A 2N1535
2N1536 2N1536A 2N1537 2N1537A
2N1538 2Nl539 2Nl539A 2N1540 2N1540A

A3
AS
A16
A24 LL20 AlO, P14 A18
A5
·AB A19
A5 A14 P15
Pl6 P16 P16 P35 .P35 ·p35 P35 P59 P59 P59
P59 HF58 HF64 HF48, 66 LL21 LL21 . LL22
LL22 LL23 HF31, 46 HF44 HF39 P45 - P45 P12, HF24 P12, HF43 P13, HF43 LL41, HF98 LL41 P59
P59 P59 P60
HU HU
HU HU
HU
HL2
HF15 HF15 HF15 HF15
P70 P70
P71 P71 P71 P71
P71 P71 P71 P71 P71 P71 P72 P72 P72 P72
P72 P72 P72 P72 P72

May 17, 1966

General Electric is geared to produce a broad line of semiconductor parts. Make G. E. your one source for all components such as:
Component Assemblies-Semiconductor lead-in wires-Dumet "slug" leads -molybdenum "slug" leads-whisker welds and other 2 or 3 part welded lead wires-molybdenum diode slugs-plastic transistor headers-plastic integrated circuit packages.
Lead and Interconnection Wires-Tungsten, molybdenum, and borated Dumet wire for glass to metal sealing-unborated and gold plated Dumet for interconnections and "pigtail" leads-tungsten and molybdenum whisker wire, bare or gold plated.
Sheet and Discs-Molybdenum and tungsten sheet-molybdenum and tungsten discs (punched, pressed and sintered, cut from rod).
Evaporative Sources for Functional Coatings-Stranded tungsten metallizing wire and coils-tungsten and molybdenum boats.
And More! Get all the data. Write or call for our new booklet "Products for the Semiconductor Industry." General Electric Lamp Metals & Cc:nponents Dept., 21800 Tungsten Rd., Cleveland, Ohio 44117. Tel: (216) 266-2970
~gress Is Ovr Mosf lmporl4nf 1'n>t/vcf

GENERAL. ELECTRIC

ON READER-SERVICE CARD CIRCLE 33

127

2Nl541

P72

2Nl54i.A

P73

2Nl542

P73

2Nl542A

P73

2Nl543

P73

2Nl544

P73

2Nl544A

P73

2Nl545

P73

2Nl545A

P73

2Nl546

P74

2Nl546A

P74

2Nl547

P74

2Nl547A

P74

2Nl548

P74

2Nl549

P74

2Nl549A

P74

2Nl550

P74

2Nl551

P74

2Nl551A

P74

2Nl552

P74

2Nl552A

P74

2Nl553

P75

2Nl553A

P75

2Nl554

P75

2N1554A

P75

2N1555

P75

2Nl555A

P75

2Nl556

P75

2N1556A

P75

2N1557

P75

2N1557A

P75

2N1558

P76

2N1558A

P76

2N1559

P76

2Nl559A 2N1560 2N1560A 2Nl561 2N1562 2N1564

P76 P76 P76 Pl2, HF80 P12,HF78 AlO, HF98

2Nl565

A20,HF98

2N1566 2N1566A 2N1572

A35,HF98 A28
AlO, HF98

2N1573 2N1574

A20,HF98 A35, HF98

2Nl586

A3

2N1587

A3

2Nl588

A3

2N1589

Al3

2N1590

Al3

2N1591

Al3

2N1592

A31

2Nl593

A31

2N1594

A32

2N1605

LL6

2Nl605A

LL6

2Nl613 HL34,P12,HF28

2Nl614

LL3

2N1615

P16

2N1616

P55

2Nl618

P55

2N1620

HL26, P55

2N1622

A20

2N1623

A13

2N1631

HF17

2Nl632

HF17

2N1637

HF17

2N1638

HF16

2N1639

HF17

2Nl640

LL2

2N1641

LL2

2Nl642

LL4

2N1643

A3

2N1646

HF99

2Nl647

P49

2N1648

P49

128

2Nl649

P49

2Nl650

P49

2Nl654

Al5

2Nl655

A6

2Nl656

Al5

2Nl666

HL18

2Nl667 2Nl668

HL18 HL19

2Nl669

HL19

2Nl671

UJT2

2Nl671A

UJTl

2Nl6718 2Nl671C

UJTl, 3 UJT3

2Nl672 2Nl672A 2Nl676

AlO A3
LL14

2Nl677 2Nl683

LL14 LL17, HF19

2Nl690

P49

2Nl691

P49

2Nl692

Pl3

2Nl693

Pl3

2Nl694

LL5

2Nl700

Pl6

2N1701

HL13

2N1702

HL12

2N1703

P60

2Nl705

A32

2N1707

A17

2N1708

LL23

2Nl709

P27, HF44

2N1710

P27, HF40

2N1711 HL35,P13,HF31

2N1714

P23

2N1715

P23

2N1716

P24

2N1717

P24

2N1718

P24

2N1719

P24

2N1720

P24

2N1721

P24

2N1722

P53

2N1722A

P53

2Nl723

P53

2N1724

P53

2N1724A

P53

2N1725

P53

2N1726

HF31

2Nl727

HF31

2N1728

HF32

2N1742

HF99

2N1743

HF99

2N1744 2N1745

HF99 HF99

2Nl746

HF32

2Nl747

HF32

2Nl748

HF28

2H1748A 2N1749

HF32 HF28

2N1752

HF19

2N1754 LL22, HF99

2N1755

P38

2N1756

P38

2N1757

P38

2N1758

P38

2Nl759

P38

2N1760

P38

2Nl 761

P38

2N1762 2Nl768

P39 HL15

2Nl769

HL15

2Nl785

HF19

2N1786

HF19

2N1787

HF19

2Nl788

HF32

2N1789

HF32

2Nl790

HF32

2Nl808

LL6

2Nl809

HL3, Pl06

2Nl810

HL3, P106

2Nl811

HL3, P106

2Nl812

HL3, Pl06

2Nl813

HL3, P106

2Nl814

HL4, Pl06

2Nl816

HL6, Pl06

2Nl817

HL6, Pl06

2Nl818

HL6, P107

2Nl819

HL6,Pl07

2Nl823 2Nl824

HL8, P107 HL8, P107

2Nl825 2Nl826 2Nl830 2Nl831 2Nl832 2Nl833

HL8, Pl07 HL8, Pl07 HL4, Pl07 HL4, Pl07 HL4, Pl07 HL4, Pl07

2Nl837 2Nl838 2Nl839 2Nl840

HL37, PB HL35, PB HL35, PB HL35, P9

2Nl853 2N1854 2N1864

LL41 LL17 HF19

2Nl865

HF99

2N1866 2N1867

HF99 HF99

2N1868 2N1893

HF99 HF19

2N1893A HL36, P13,

2N1899

HF32 HL29, P83

2N1900

P83, HF20

2N1901 2N1902

HL29, P83 HL29, PB3

2N1903

P83, HF20

2N1904

HL29, P83

2N1905

P53

2N1906

P53

2N1907 HL2, P55, HF9

2N1908 HL3, P55, HF9

2N1917 2Nl918 2N1919

LL41 LL41 LL41 ·

2N1920

LL41

2N1921

LL42

2N1922

LL42

2Nl924

A30

2Nl925

A36

·2N1926

Ml

2N1936

P87

2N1937

P87

2Nl943

Pl4

2N1958 2N1958A

HF32 HF32

2Nl959 2Nl959A 2N1960 2Nl961 2Nl962 2N1963 2N1964 2N1965

HF33 HF33 HFlOO HFlOO HF50 HF50 HF33 HF33

2N1972 HL31, HF21 2N1973 HL34,Pl3, HF28

2N1974 HL32, P13, HF9

2Nl975 HL31,P13,HF22 2N1978 HL29,P39,HF19

2N1983 HL28,P9,HF14 2N1984 HL28, P9, HF14 2N1985 HL28, P9, HF14

2N1986 HL29, P9, HF19 2Nl987 HL29,P9,HF19

2N1988 HL29, P9, HF20

2N1989 HL30,P9,HF20

2Nl990HL44, P9, HFlOO

2Nl991

HL30, P9

2Nl992

LL34

2Nl994

LL42

2Nl995

LL42

2Nl996

LL42

2Nl997

LL42

2Nl998

LL42

2Nl999

LL42

2N2000

LL43

2N2001

LL43

2N2015

P87

2N2016

P87

2N2017

Pl6, 24

2N2018

P49

2N2019

P49

2N2020

P49

2N2021

P50

2N2038

Pl

2N2039

Pl

2N2040

Pl

2N2041

Pl

2N2042

All

2N2042A

All

2N2043

A22

2N2043A

A22

2N2048 LL25, HF44

2N2048A

HF44

2N2049 2N2060 2N2060A

Pl3 HF22 HF22

2N2061A

P76

2N2062A

P76

2N2063A

P76

2N2064A

P76

2N2065A

P77

2N2066A

P77

2N2067

P24

2N20678

P24

2N2067G

P24

2N2067-0

P25

2N2067W

P25

2N2068

P25

2N2068G

P25

2N2068-0

P25

2N2075 2N2075A 2N2076

P92 P92 . P92

2N2076A

P92

2N2077

P92

2N2077A

P92

2N2078

P92

2N2078A

P92

2N2079

P93

2N2079A

P93

2N2080

P93

2N2080A

P93

2N2081

P93

2N2081·A

P93

2N2082

P93

2N2082A

P93

2N2084 2N2089 2N2092 2N2093 2N2095 2N2096 2N2097

HF32 HF26 HF24 HF24 HF80 HF75 HF-75

2N2098 2N2099 2N2100

HF80 HF75 HF75

2N2102 2N2106 2N2107

LL20 LL3, P3
P3

2N2108

P3

2N2109

HL4, P108

2N2110 2N21ll

HL4,Pl08 HL4, P108

ON READER-SERVICE CARD CIRCLE 51 ~

A unique new way to prevent hidden defects in IC's.
Only Westinghouse production lines use anything like this 18-wafer carrier (cover and below). It vastly reduces a major cause of hidden potential failures in IC's ... the oxide faults and scratches from tweezer-handling of wafers. At Westinghouse, 18 wafers at a time go from one mechanized work station to another without being touched by tweezers. The benefit for you: a new order of reliability in IC's.

A 200X eye on alignment and contacts.
This is how closely Westinghouse quality control people look at every IC wafer. Each one undergoes microscopic inspection. If any diffusion pattern or metallized contact isn't in perfect alignment, it shows up 200 times life size. Westinghouse takes a big look at quality.

100% electrical testing.
You're looking through a microscope as 18 electrical probes contact active test points on an IC wafer. Once aligned, this automatic machine indexes precisely ... running elaborate electrical tests for every device on the wafer. Every circuit. Not just samples.

Continuous strip bonding of IC's.
Here's another mechanized Westinghouse production step that eliminates defects caused by manual handling of assemblies. Glass and Kovar® packages are fed on strips through final assembly, not handled one by one. They come out as finished flat packs. Result: no mangled leads, scratched gold plating, or stresses in the glass-to-metal seal which could later cause hermetic failure.

Unique inside look at an operating integrated circuit.
The exclusiveWestinghouse Scanning Electron Microscope is the only one in the integrated circuit field. On a CRT, it displays what's happening 5, 10, or any number of microns inside the solid silicon of an operating IC chip. The picture here shows the isolation wall p-n junction of a typical flip-flop. It could be seen in no other way without cutting apart the silicon circuit. Such pictures reveal imperfections which elude all conventional electrical and visual tests. They lead to design changes for even more reliable IC's.

Exhaustive high-temperature test cycles.
Exposed to elevated temperatures for up to 1000 hours, Westinghouse integrated circuits undergo batteries of actual power-on tests. After this workout, the IC's are put through even more complex electrical and mechanical tests checking dozens of parameters. During all phases of environmental and final testing, the IC's are completely protected against handling damage. They remain in AUTO-PAK® carriers and test board systems, as shown here. Here's extra assurance they will be shipped to you in perfect "as tested" condition.

You can be sure if it's Westinghouse

Space projects and you both get ultimate IC reliability from Westinghouse

The Westinghouse IC's you buy are virtually as reliable as those used in missiles and satellites. The reason: production and quality control steps developed for Defense Department reliability programs ... particularly with North American Aviation's Autonetics Division for the Minuteman program ... are standard Westinghouse procedures. On the previous pages, you've just seen four examples. The 18-wafer carrier, the continuous strip bonders, the unique scanning microscope, and our high-temperature test cycles all resulted from development contracts with the Air Force Materials Laboratory, Manufacturing Technology Division. All contribute reliability by helping us prevent hidden defects. All raise IC production yields, thus making Westinghouse IC's more economical. The happy result is unmatched reliability and value ... both yours at once when you specify Westinghouse integrated circuits. Let us send you. information on Westinghouse integrated circuits. Write Westinghouse Electric Corporation, Molecular Electronics Division, Box 7377, Elkridge, Maryland 21227.
You can be sure if it's Westinghouse

J-09130

Printed in U.S.A.

2N2112 2N2113 2N2114

HL4, P108 HL4, P108 HL5, P108

2N2116 2N2117 2N2118 2N2119 2N2123 2N2124 2N2125 2N2126 2N2130 2N2131

HL6, P108 HL6, P108 HL7, P108 HL7, P108 HL8, P109 HL8, P109 HL8, P109 HL8, P109 HL5, P109 HL5, P109

2N2132 2N2133 2N2137 2N2137A 2N2138 2N2138A 2N2139 2N2139A 2N2140 2N2140A
' l\J2141 Q14i.A
~2142
J2142A 12143 J2143A
~2144
N2144A N2145
~N2145A

HL5, P109 HL5, P109
P56 P56 P-56 P57 P57 P57 P57 P57
P57 P57 P57 P57 P57 P58 P58 P58 P58 P58

2N2146

P58

2N2146A

P58

2N2147

P27

2N2148

P27

2N2150

P40

2N2151

P40

2N2152

P93

2N2152A

P93

2 N2153

P94

2N2153A

P94

2N2154

P94

2N2154A

P94

2N2156

P94

2N2156A

P94

2N2157

P94

2N2157A

P94

2N2158

P94

2N2158A ' 2N2160

P94
UJTl

'2N2162

LL13

2N2163

LL13

2N2164

LL16

2N2165

Llll

2N2166

Llll

2N2167 2N2168

LL14 HF79

2N2169 2N2170

HF79 HF72

2N2171

A41

2N2173

A15

2N2177

A6

2N2178

A6

2N2185

LL9

2N2186

LL9

2N2187

LL9

2N2188 LL43, HF29, 100 2N2189 Ll_43 . µF39, 100

2N2190 LL43, HF29, 100

2N2191 LL43, HF39, 100

2N2192A Pll , HFlOO

KLIXON®2ST Cooling Effect Detectors comb ine unprecedented sensitivity, reliabil ity, simplicity and economy to prevent harmful

I i

overheating in computers , radar and microwave systems,

copying machines, film projectors and other fan-cooled equipment.

I
I·

They completely eliminate the need for vane switches and thermostats. I

Reliable solid-state sensing makes the difference! The sensor is a se lf-heated NTC (negative temperature coefficient) resistor. Mounted in the air stream and connected in series with a special rating of the KLIXON 4MC magnetic circuit breaker, it monitors the cooling capacity of the air stream. Loss of cooling effect as a result of clogged inlets, fan failure, air conditioner loss, or any combination of these causes a sharp drop in sensor resistance . The resul tant increased current will trip the circuit breaker.

Unlike conventional thermistors, KLIXON 2ST Detectors sense over their entire surface, instead of only one point. This simplifies installation and mounting. Moreover, they can handle directly a current large enough to actuate a circuit breaker without intermediate amplification. They can be designed to operate at any voltage between 3 and 24 v-dc / 60 cycle ac.
Bulletin PRET-16 gives you all the facts you need to evaluate these exclusive Tl developments . Write for your copy today.

2 N2193A 2N2194A 2N219SA

HL36, P11,
HF41 HL36, P11,
HF41 HL36, P11 ,

~METALS & CONTROLS INC. 5 105 FOR ES T S T .. ATTLEBORO . MA S S . A CORPORATE DIV I SION OF
TEXAS INSTRUMENTS
INCORPORATED

~ ON READER-SERVICE CARD CIRCLE 34

ON READER-SERVICE CARD CIRCLE 35

129

2N2195A 2N2196 2N2197 2N2201 2N2202 2N2203 2N2204 2N2205
2N2206 2N2207 2N2217 2N2218 2N2218A 2N2219 2N2219A 2N2220 2N2221 2N2221A
2N2222 2N2222A 2N2223 2N2223A 2N2225 2N2226 2N2227 2N2228 2N2229 2N2230
2N2231 2N2232 2N2233 2N2238 2N2239 2N2243A
2N2244 2N2245 2N2246 2N2247
2N2248 2N2249 2N2250 2N2251 2N2252 2N2253 2N2254 2N2255 2N2256 2N2257
2N225B 2N2259 2N2266 2N2267 2N226B 2N2269 2N2270 2N2273 2N2274 2N2275
2N2276 2N2277 2N227B 2N2279 2N2280 2N22Bl 2N22B2 2N22B3 2N2284 2N2285
2N2286 2N22B7 2N2288 2N2289 2N2290 2N2291 2N2292 2N2293 2N2294
130

HF41 P27 P28 P28 P28 P28 P28 LL23
LL23 HF47 HL21, HF58 HL21 , HF58 HF58 HL21, HF59 HL21, HF66 HF21, HF59 HL21, HF59 HF60
HL22, HF60 HF66 HF20 HF20 HF14
HL3, P87 HL3, P87 HL3 , P87 HL3, P88 HL2, P88
HL2, P88 HL2, P88 HL2 , P88
P88 P28 HL36, Pll, HF41 A22 A35 A43 A22
A36
A43 A22 A36 A43 A22 A36 A43 LL29, HF71 LL29, HF71
LL29, HF71 LL29, HF71
P51 P51 P51 P51 HU7, P16 HF60 LLB LL8
LLB , HF4 LL8 , HF4
LUO LUO LL14 LL15 P16 P16 P16 HL44, P77
HL44, P77 HL44 , P7B HL44, P55 HL44, P55 HL44 , P56 HL45 , P56 HL45 , P56 HL45, P56 HL45, P56

2N2295 2N2296 2N2297 2N2303 2N2304 2N2308 2N2310 2N2311 2N2312 2N2313 2N2314 2N2315 2N2316 2N2317 2N23l8 2N2319 2N2320 2N2330 2N2331 2N2349 ,2N2350 2N2350A
2N2351 2N2351A
2N2352 2N2352A
2N2353 2N2353A
2N2357 2N2358 2N2359 2N2360 2N2361 2N2362 2N2364A
2N236B
2N2369
2N2369A 2N2370 2N2371 2N2372 2N2373 2N2377 2N2378 2N2381 2N2382 2N23B3 2N23B4 2N2386
2N23B7
2N23BB
2N23B9
2N2390 eN2391 2N2392 2N2394 2N2395 2N2397 2N239B 2N2399 2N2400 2N2401 2N2402 2N2405 2N2410 2N2411 2N2412 2N2413 2N2415

HL45, P56
HL45, P56 P17 PlO A13 P35
HU6 HU6 HU6 HU6 HU6
HU6 HU6 HU6 HF66 HF66 HF67 LL22, HF33 LL23, HF33 LU4 LU5
HL37, Pl7, HF41 LU5
HL37, P17, HF41. LU5
HL37, P17, HF41 LU5
HL37, P17, HF41
HL45, P95 HL45, P95 HL45, P95
HFlOO HF101 HF101 HL37, P17,
HF42 HL40, LL40,
P4,HF83 HL40, LL35,
P4,HFB6 LL35, HF86
A6 AlO A6 AlO
HF7 HF6 LL27 , HF67
LL2B, HF67 P61 P61
FET8, 12, 23, 43, 46,55 A29 A42
AlB, HL45 , HFlOl HL46 A6 A15 HL46
HL46, HFlOl HL19 , HF50 HF101 HFlOl HF44
HF50 HF60 HF33 HL46, HFlOl HL46, HF101 HF101
HFlOl HF102

2N2416 2N2423 2N2427 2N2428 2N2429 2N2430 2N2431 2N2432 2N2451 2N2453 2N2453A 2N2455 2N2459 2N2460 2N2461 2N2462 2N2463 2N2464 2N2465 2N2466 2N2475 2N2476 2N2477 2N2480 2N2480A 2N2481 2N2482 2N2483 2N2485 2N2486 2N2487 2N2488 2N24B9 2N2494 2N2495 2N2496 2N2497
2N249B
2N2499
2N2500
2N2501 2N2509 2N2510 2N2511 2N2512 2N2515 2N2516 2N2518 2N2519 2N2520 2N2521 2N2522 2N2523 2N2524 2N2525 2N2526 2N2527 2N2528 2N2537 2N2538 2N2539 2N2540 2N2551 2N2552 2N2553 2N2554 2N2555 2N2556 2N2557 2N2558 2N2559 2N2560
2N2561 2N2562

HF102 P77
HF20 A41 A46 A30 A36
HF12 HF28
A44 A44 HL40
HF47 HF50 HF57 HF60 HF47 HF51 HF57 HF60 LL25, 34 LL25, HF60
HF60 HF94 HF80 HL22 HF90 HF23 HF102 HF102 HF74 HF74
HF67 HF4B HF48 HF48 FET2, 11, 20, 42,55 FET2, 11, 21, 44, 55 FET3, 11, 22 , 47 , 55 FET8, 11 , 20, 43 , 55 HF72 HF17
HF17 HF17 HF47 HF47 HF51 HF47 HF4B HF44 HF48 HF51
HF60 HF64 P30, HF46 HL46 , P62 HL46, P62 HL46, P62 LL31, HF61 LL32, HF61 LL32 , HF6 1 LL32 , HF61
LL43 P31 P31 P32 P32 P32 P32 P32 P32 HL2, P32
P32 P32

2N2563 2N2564 2N2565 2N2569 2N2570 2N2580 2N2581 2N2582
2N2583 2N2586 2N2590 2N2591 2N2592 2N2593 2N2595 2N2596 2N2597 2N2598
2N2599 2N2599A 2N2600 2N2600A 2N2601 2N2602 2N2603 2N2604 2N2605 2N2606
2N2607 2N2608 2N 2609 2N 26 11 2N 2613 2N2614 2N2616 2N2617 2N26 1B 2N2618/4 2N2631
2N2632 2N2633 2N2634 2N2635 2N2646 2N2647 2N2649
2N2650 2N2654 2N2656 2N2657 2N2658
2N2671 2N2672 2N2673 2N2674 2N2675
2N2676 2N2677 2N2678 2N2692 2N2697 2N2698 2N2706 2N2707 2N2 70 8
2N2709 2N2711 2N2712 2N2713 2N2 714 2N2715 2N2716 2N2717 2N272 0 2N2721
2N2722 2N2723 2N2724

P32 HL2 HL2 LL20 L20 P98 P98 P98
P98 A42 HF27 HF33 HF40 HF44 HF22 HF29 HF3 9 HF22
HF29 A15
HF39 A29
HF2 2 HF29 HF4 HF4 HFLI FET1 8 , ...
FET18 , ; FET19, Ll FET1 9, 4
P2 t A4Li A46 A24 A13 HF51 HF51 P23 P50 P50 P50 HF102 UJTl UJTl , 3 HF102
HF102 HF44 HF63 P14 P14
HF27 HF27
A3 AB A19
A34 LU2 LU5 LL43 P33 P33 A26 , 41 A42 HF 8 6
HFl A16 A33 A17 A3 3 A36 A40 A27 , LL2B HF 2 9 HF29
HF33 HF10 2 HF102

E LECTRONIC DESIGN

2N2725 2N2726 2N2727 2N2728 2N2729 2N2730 2N2731
2N2732 2N2733 2N2734 2N2735 2N2736 2N2737 2N2738 2N2739 2N2740 2N2741
2N2742 2N2745 2N2746 2N2747 2N2748 2N2751 2N2752 2N2753 2N2754 2N2757
2N2758 2N2759 2N2760 2N2761 2N2763 2N2764 2N2765 2N2766 2N2769 2N2770
2N2771 2N2772 2N2781 2N2782 2N2783 2N2784 2N2785 2N2787 2N2788 2N2789
2N2790 2N2791 2N2792 2N2795 2N2796 2N2797 2N2798 2N2799 2N2800 2N2801
· 2N2801 2N2808 2N2808A 2N2809 2N2809A 2N2810 2N2810A 2N2811 2N2812 2N2813
2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822 2N2823

HF102 P17 P17 P95
A24, HF89 P95 P95
P95 P84 P84 P84 P84 P84 P84 HL5, P99 HL5, P99 HL5, P99
HL5, P99 HL7, P99 HL7, P99 HL7, P99 HL7, P99 HL8, P99 HL8, PlOO HL9, PlOO HL9, PlOO HL5, PlOO
HL6, PlOO HL6, PlOO HL6, PlOO HL6, PlOO HL7, PlOO HL7, PlOO HL7, PlOl HL7, PlOl HL9, PlOl HL9, PlOl
HL9, PlOl HL9, PlOl P28, HF43 P28, HF43 P28, HF43
HF90 A49
LL35, HF61 LL35, HF61 LL35, HF61
LL35, HF61 LL35, HF61 LL35, HF61
HF67 HF67 HF44
HF40 HF40 LL22 LL22
HF90 HF90 HF92 HF91 HF92 HF91 HF92
P54 P54 P54
P54 PlOl PlOl
PlOl PlOl P102 P102
P102 P102 Pl02

May 17, 1966

WHY
g

CUTS?

Because it takes 9 different crystal cuts to cover the frequency spectrum. Hughes makes quartz crystal units in all 9 cuts, from lkc to over 150 me!
There's another reason for making 9 cuts. Usually any one frequency can be handled by several different cuts, but some cuts display better frequency tolerance with temperature than others. Hughes has the capability to provide the cut needed over any operating temperature range for minimum frequency drift.
Whether you need custom or MIL spec units in prototype or production quantities, why not call on Hughes' broad experience and engineering depth for all your crystal requirements. For specific information call or writ~ Hughes Electronic Devices, Newport Beach, Calif.

~r------------------,

I

I

: HUGHES:

Leader in Frequency Control Devic

IL __________________ JI

HUGHES AIRCRAFT COMPANY
ELECTRONIC DEVICES NEWPORT BEACH, CALIFORNIA

ON READER-SERVICE CARD CIRCLE 36

2
21 21
5~
2/\' 2ft 21
,2, 1
~
131

2N2824

P102

2N2825

P102

2N2828

P50

2N2829

P50

2N2831

A13

2N2832

P62

2N2833

P62

2N2834

P62

2N2835

P30

2N2836

P45

2N2837 2N2838

HF40 HF40

2N2841 FETl 8, 28, 48

2N2842 FETl 9, 30, 48

2N2843

FET19, 33

2N2844 2N2845

FET19, 37 HF72

2N2846 2N2847

HF72 HF72

2N2848 2N2849

HF72 HL34

2N2850

HL31

2N2851

HL31

2N2852

HL28

2N2853 2N2854

HL31 HL34

2N2855

HL31

2N2856 2N2857 2N?860 2N2861

HL28 HF91
A14 HF103

2N2862 2N2863 2N2864

HF103 HF103 HF103

2N2865 2N2868 2N2869 2N2870

HF10'3 A20 P40 P40

2N2871

LL43

2N2872 2N2874 2N2875

LL43 P29, HF43
P33

2N2876 2N2877 2N2878 2N2879 2N2880 2N2881

HF51 P40 P40 P40 P40 P23

2N2882 2N2883 2N2884 2N2885 2N2887 2N2890 2N2891 2N2892 2N2893 2N2894

P23 HF80 HF80 HF67 P35, HF67
P17 P17 P40 P40 HF73

2N2895 2N2896 2N2897 2N2898

HF34 HF34 HF34 HF34

2N2899 2N2900 2N2902

HF34 HF34 P50, 106

2N2903

A41

2N2903A

A41

2N2904

HF51

2N2904A

HF51

2N2905

HF51

2N2905A

HF51

2N2906

HF52

2N2906A

HF52

2N2907 2N2907A

HF52 HF52

2N2908

P62

2N2909

A21

2N2911

P23

132

2N2912 2N2913 2N2914 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920 2N2923 2N2924 2N2925 2N2926 2N2927 2N2929 2N2936 2N2937 2N2938 2N2942 2N2943
2N2944 2N2945 2N2946 2N2947 2N2948 2N2949 2N2950 -2N2951 2N2952 2N2953
2N2955 2N2956 2N2957 2N2958 2N2959 2N2962 2N2963 2N2964 2N2965 . 2N2966
2N2968 2N2969 2N2970 2N2971 2N2972 2N2973 2N2974 2N2975 2N2976 2N2977 2N2978 2N2979 2N2980 2N2981 2N2982 2N2987 2N2988 2N2989 2N2990 2N2991
2N2992 2N2993 2N2994 2N2995 2N2996 2N2997 2N2998 2N2999 2N3009 2N3010
2N3011 2N3012 2N3013 2N3014 2N3015 2N3016 2N3017

P60 HF47 HF24 HF24 HF24 HF24 HF25 HF25 HF25
A37
A43 A46 Al8 HF45 HF91 HF103 HF103 LL44 HF45 HF40
LL12, HF9 LL7, HF4 LL5, HF2 HF34 HF34 HF34 HF34 HF52 HF52 A47
HF73 HF74 HF75 HF62 HF62 HF86 HF86 HF87 HF87 HF88
LL12 LL12 Llll Llll HF25 HF25 HF25 HF25 HF25 HF25
HF25 HF26 HF22 HF22 HF26
P29 P29 P29 P29 P29
P29 P29 P29 · P29 HF76 HF76 HF84 Hfq3 LL30, HF73 LL34
LL32 LL32 HL24, HF83 HL24, HF83 LL25, HF62 P18, HF103 HF103

2N3018 P36, HF103

2N3019 LL12, HF26

2N3020 LL12, HF26

2N3021

P36

2N3022

P36

2N3023

P36

2N3024

P36

2N3025

P36

2N3026

P36

2N3043

HF67

~N3049

HF84

2N3053

HL36

2N3054

HL25

2N3055

HL23

2N3056

P18, HF26

2N3056A

P18

2N3057

Pl8, HF26

2N3057A

P18

2N3058

A36

2N3059

A46

2N3060

A36

2N3061

A44

2N3062

A31

2N3063

A31

2N3064

A21

2N3065

A21

2N3066

FET40

2N3067

FET34

2N3068

FET29

2N3069

FET44

2N3070

FET38

2N3071

FET31

2N3074

HF48

2N3075

HF26

2N3076

HL30, P83

2N3077

A49

2N3078

A48

2N3081

HF45

2N3081/46

HF45

2N3081/51

HF45

2N3084

FET40

2N3085

FET40

2N3086

FET40

2N3087

FET40

2N3088

FET52

2N3088A

FET53

2N3089

FET37, 52

2N3089A FET37, 53

2N3107

LL18

2N3108 HL34, LL19

2N3109 2N3110

LL18 HL34, LL19

2N3112

FET18, 28

2N3113

FET18, 29

2N3114

P18

2N3115

HF62

2N3116

HF62

2N3117

HL32

2N3118 2N3119

HF62 HF62 .

2N3128

A32

2N3129

A42

2N3130

A38

2N3131

LL28

2N3133 2N3134

HF52 HF52

2N3135

HF52

2N3136

HF52

2N3137

HF87

2N3138

HF104

2N3139

HF104

2N3140

HF104

2N3141

HF104

2N3142

HF104

2N3143

HF104

2N3144

HF104

2N3145

HF104

2N3146

P92

2N3147 2N3149 2N3150 2N3151 2N3154
2N3155 2N3156 2N3157 2N3158 2N3209 2N3212 2N3213 2N3214 2N3215 2N3220
2N3221 2N3222 2N3223 2N3227 2N3229 2N3230 2N3231 2N3241 2N3242 2N3244
2N3245 2N3248 2N3249 2N3250 2N3250A 2N3251 2N3251A 2N3252 2N3253 2N3262
2N3263 2N3264 2N3265 2N3266 2N3277 2N3278 2N3279 2N3280 2N3281 2N3282
2N3283 2N3284 2N3285 2N3286 2N3287 2N3288 2N3289 2N3290 2N3291 2N3292
2N3293 2N3294 2N3295 2N3296 2N3297 2N3298 2N3299 2N3300 2N3301 2N3302
·2N3303 2N3304 2N3307 2N3308 2N3309 2N3311 2N3312 2N3313 2N3314 2N3315
2N3316 2N3317

P92 P109 P109 PllO
P46
P47 P47 P47 P47 HL40 P26 P26 P26 P27 P41
P41 P41 P59 HL23, HF80 HF53 P36 P36 A44 A44 HF48
HF45 HF62 HF67 LL25, HF62 HL22 LL28, HF68 HL23 HL19, HF53 HL18, HF48 HF45
P83 P61 P83 P61 FET36 FET40 HF76 HF76 HF68 HF68
HF62 HF63 HF63 HF63 HF73 HF73 HF68 HF68 HF63 HF58
HF58 HF58
HF2 HFl HFl HF53 HL39, HF76' ' HL39, HF76 HL39, HF76 HL39, HF76
HL40, HF86 HF87 HF68 HF68 HF68 P95 P95 P95 P96 P96
P96 LL9, HFlO

ELECTRONIC DESIGN

2N3318 2N3319 2N3320 2N3321 2N3322 2N3323 2N3324 2N3325 2N3326 2N3327 2N3328 2N3329
2N3330
2N3331
2N3332
2N3333 2N3334 2N3335 2N3336 2N3337 2N3338 2N3339 2N3340 2N3341 2N3342 2N3344 2N3345 2N3346 2N3365 2N3366 2N3367 2N3368 2N3369 2N3370 2N3371 2N3374 2N3375 2N3376 2N3377 2N3378 2N3379 2N3380 2N3381 2N3382 2N3383 2N3384 2N3385 2N3386 2N3387 2N3390 2N3391 2N3391A 2N3392 2N3393 2N3394 2N3395 2N3396 2N3397 2N3398 2N3399 2N3402 2N3403 2N3404 2N3405 2N3409 2N3410 2N3411 2N3414 2N3415 2N3416 2N3417 2N3418 2N3419 2N3420

LUO, HF6 LL13, HFlO
HF84 HF84 HF84 HF53 HF53 HF53
HF58 HF76 FET42 FET2, 13, 20, 43,52 FET2, 13, 21, 44, ·52 FET3, 12, 22, 47,51 FET8, 13, 21, 43,53 FET25 FET24 FET24 FET24 HF76 HF77 HF77 LL18 LL18
LL3 LL3 LL3 LL3
FET40 FET34 FET29 FET45 FET38 FET31 HF77
"P18 HF81 FETl, 39, 58
FETl, 40, 58 FET2, 46, 58 FET3, 46, 58
FET4, 58 FET4, 58
FET4 FET5 FET6 FET6 FET6
FET6 A48 A47 A47 A43 A37 A27 A49 A49 A49
A49 HF84
A33 A44 A33 A44
HF59 HF59 HF59
A34 A44
A34 A44 P25 P25 P25

May 17, 1966

Type "A", open tips for fast response. Adjustable tip length, fixed brass or stainless steel fittings (Teflon* seal).
Type "R", Brake Drum type stainless steel or brass mounting -open or closed tip.
Type "Q", "jilfy-head" couples with quick-connect plugs
< or screw terminal for easy dismounting.
Type "C" thermocouples with fixed or adjustable fittings, for high pressures.

[lI~·&·..:~.;:)v@taUeeir-Rytti;E'a!ss~,p:~·~encgqn~p1n1~~1~eeh~se~~rl gQ.i~1b~1.:1.:·,

-~h~ oouples for ver! special oil or freon isystems.¥Fo

·once 1: *~equir@m~nt~.

1

or twic~

At l~as~
a week.·

,.. · ' Mostly, though, we nnd

.!h.~e~r:ehas~r'e:~a~.ne."t.h;ant;'s:~n~ehe_td:e:d:.

~lis pr +~800°f.
And:_standard' .2! special-a
thermocouples are made fo ·rn!et
or exceed the most rigorous m11i·
''tary ·and' aerospace require!:"ents.
As a result, they've won the widest . ~

For engine exhaust gases, ac~eptance for precision measure- '\

hydraulics, fuels, engine ment throughout industrY·

r mt uw1s~ ENGINEERJNG COMPANY

I

Naugatuck; Connecticut

~
~

Lewis-custom producer to tems .·. high temperature

htdustry and aircraft of ~lectrical thermocouples and extension wire

m.·e.asaunrdinmgulifnl~~tcrounmdeuncttsora.ncdabslye~s;t

L-

ON READER-SERVICE CARD CIRCLE 37

133

If this can't faze our four-slides ... nothing can!
Stick Art Wire with your wire form nightmares. We're in business to handle impossible delivery dates, ridiculous tolerances and unbelieveable forms. We like to be challanged.
Save money, too. Art Wire takes over your down-time, overhead and inventory problems and makes them our own. Let us do the worrying. We're good at it.
Send us a part or a print. If you're in a hurry, phone 201621-7272.
Bulletin 501 shows what we can do. Use the inquiry card for your copy.
ART WIRE & STAMPING CO.
17 Boyden Place Newark, New Jersey 07102

134

ON READER-SERVICE CARD CIRCLE 38

2N3421 2N3423 2N3424 2N3426 2N3427
2N3428 2N3429 2N3430 2N3431 2N3432 2N3433 2N3434 2N3436 2N3437 2N3438
2N3439 2N3440 2N3441 2N3442 2N3444 2N3445 2N3446 2N3447 2N3448 2N3452
2N3453 2N3454 2N3455 2N3456 2N3457 2N3458 2N3459 2N3460 2N3462 2N3463
2N3467 2N3468 2N3469 2N3470 2N3471 2N3472 2N3473 2N3474 2N3475 2N3476 2N3477 2N3478 2N3485 2N3485A 2N3486 2N3486A 2N3487 2N3488 2N3489 2N3490
2N3491 2N3492 2N3493 2N3494 2N3495 2N3496 2N3497 2N3498 2N3499 2N3500
2N3501 2N3502 2N3503 2N3504 2N3505 2N3506 2N3507 2N3508 2N3509 2N3510
2N3511 2N3512 2N3544

P25 HL40, HF85 HL25, HF85 HL19, HF53
A46
A48
HL19, P88 HL19, P88 HL19, P88 HL19, P88 HL19, P89 HL20, P89
FET4, 46 FET3, 41
FET34
P18 P18 P37 P81 HL18 P81 P81 P81 P81 FET41, 52
FET34, 52 FET29, 52 FET41, 51 FET34, 51 FET29, 51 FET4, 47, 50 FET3, 41, 52 FET2, 34, 52
A35 A35
HL18 HL17
P15 HL23, P89 HL23, P89 HL24, P89 HL24, P89 HL24, P89 HL24, P89 HL24, P89 HL24,P89
HF89 LL23, HL20 LL23, HL20 LL23, HL20 LL23, HL20
P81 P81 P82 P82
P82 P82 LL32 HL20 HL17 HL20 HL17 HL17 HL17 HL17
HL17 HL38, HF59 HL38, HF63 HL22, HF63 HL38, HF63
HL17 HL17 HL24 HL24 HL23
HL23 HL39 HF85

2N3546 2N3551 2N3552 2N3553

HL25 P50 P51
HF81

2N3554 2N3563

LL23 HF89

2N3564

HF87

2N3565 2N35'66

HF16 HF16

2N3567 2N3568

HF22 HF22

2N3569

HF23

2N3570

HF93

2N3571

HF92

2N3572

HF91

2N3576

LL32

2N3577

P62

2N3578

FET42, 50

2N3579

AlO

2N3580

A21

2N3581

A25

2N3582

A38

2N3583

P45

2N3584

P45

2N3585

P46

2N3588

HF57

2N3597

P78

2N3598 2N3599 2N3600

P78 P78 HF89

2N3605

LL28

2N3606

LL28

2N3607

LL28

2N3608 FET5, 14,49, 57

2N3609

FET25

2N3610

FETl

2N3611

P62

2N3612

P62

2N3613

P63

2N3614

P63

2N3615

P63

2N3616

P63

2N3617

P63

2N3618

P63

2N3619

HF53

2N3620 2N3621

HF54 HF53

2N3622 2N3623

HF53 HF54

2N3624 2N3625

HF54 HF54

2N3626 2N3627

HF54 HF54

2N3628 2N3629

HF54 HF54

2N3630 2N3631

HF54 FET4, 13

2N3632

HF77

2N3633 2N3634

HF92 HL18

2N3635 2N3636

HL20 HL18

2N3637 2N3638

HL20 HF45

2N3640 2N3641

LL34 LL25

2N3642

LL25

2N3643 2N3644

LL25 LL24

2N3645

LL24

2N3646 2N3647 2N3648

LL34 HL23, LL30 HL23, LL33

2N3660

Pl8

2N3661

P19

2N3662 2N3663

HF90 HF90

2N3665

P19

ELECTRONIC DESIGN

2N3666 2N3677 2N3683 2N3684

P19 LL7,14
HF85 FET46,54

2N3685 2N3686 2N3687

FET43,54 FET36,54 FET31,54

2N3688 2N3689

HF77 HF77

2N3690 2N3691

HF77 A23, HF54

2N3692 2N3693

A40,HF55 HF55

2N3694 2N3695 2N3696 2N3697 2N3698

HF55 FET43, 54 FET37,54 FET33,54 FET29, 54

2N3699

P19

2N3701

HF55

2N3702 2N3703

HF35 HF35

2N3704 2N3705

HF35 HF35

2N3706 2N3707 2N3708 2N3709 2N3710 2N3711 2N3712

HF35 A40 A23 A23 A37 A45 HF16

2N3713 2N3714 2N3715 2N3716

HL27,P90 HL23, P90 HL27, P90 HL27, P90

2N3719 2N3720

HL32, P21 HL32,P21

2N3721

A30

2N3722

LL32

2N3723 2N3728

LL32 HF77

2N3729 2N3730 2N3731

HF77 P25 P19

2N3732 2N3733 2N3734 2N3735 2N3736

P13 HF78 HL22, HF63 HL22, HF63 HL22, HF64

2N3737 2N3738 2N3739 2N3740

HL22, HF~4 HL27,P33 HL28,P33 HL27, P37

2N3741 2N3742

HL27,P37 HF14

2N3743 2N3744

HF14 P41

2N3745

P41

2N3746

P41

2N3747

P41

2N3748

P41

2N3749

P41

2N3750

P41

2N3751

P42

2N3752

P42

2N3762 2N3763

HL37, HF49 HL37,HF45

2N3764 2N3765

HL37 , HF49 HL37,HF45

2N3766 HL28, P33, HF55

2N3767 2N3771

HL28, P33 P90

2N3772

P90

2N3773

P90

2N3783 2N3784

HF88 HF88

2N3785

HF88

2N3789

P90

May 17, 1966

WE'RE PROLIFERATING!!
We've developed an entirely new line of Press-Lite switches and press-to-test indicator lights-including a high quality series of lights and switches that meet industry standards for appearance and performance.
We're proliferating in the catalog department, too. Write for complete details of the industry's finest line of neon lamps, indicator lights, illuminated pushbutton ·switches and their transistorized or EMI shielded versions. Many options available.

·

MARCO-OAK INDUSTRIES

A DIVISION OF OAK ELECTRO/NETICS CORP.
207 SOUTH HELENA STREET, ANAHEIM, CALIFORNIA 92803
PHONE: 714-535-6037 · TWX : 714- 776-6111 ON READER-SERVICE CARD CIRCLE 39

135

for T0-18, T0-5, duals, integrated circuits, lead converters, lead spreaders ... all are contained in Thermalloy's new catalog #65-8. Complete mechanical drawings, materials and specifications are included along with Thermalloy's new
PAD SELECTOR GUIDE!
ON READER-SERVICE CARD CIRCLE 40
136

2N3790

P90

2N3791

P90

2N3792

P91

2N3796 FET9,20,39,50

2N3797 FET9,21,47, 50

2N3798

HF35

2N3799 2N3800 2N3801 2N3802

HF35 HF35 HF35 HF35

2N3803

HF36

2N3804

HF36

2N3805

HF36

2N3806

HF36

2N3807

HF36

2N3808 2N3809

HF36 HF36

2N3810

HF36

2N3811

HF36

2N3818

HF46

2N3819 FET9, 12, 21, 45,55,59

2N3820 FET9, 12, 19,

36, 55, 58

2N3821 FET9, 14, 20, 38,42,51,59

2N3822 FET9, 21, 39,

45,51,59

2N3823 FET9, 12, 21, 43,52,53,59

2N3824 FET5, 12, 16

2N3837

P37

2N3838

P37

2N3840

LLB

2N3841

LL4

2N3842

LL4

2N3843

HF42

2N3843A

HF42

2N3844 2N3844A

HF42 HF42

2N3845

HF42

2N3845A

HF42

2N3846

P91

2N3847

P91

2N3848

P91

2N3849

P91

2N3850 2N3851

HL16, P42 P42,51

2N3852

HL16, P42

2N3853

P42

2N3854 2N3854A

HF68 HF68

2N3855

HF73

2N3855A

HF73

2N3856

HF74

2N3856A 2N3858 2N3858A 2N3859

HF74 A29 A29 A39

2N3959A

A39

2N3860

A43

2N3866

HF88

2N3877

All

2N3877A

All

2N3878

P46

2N3879 2N3880 2N3883 2N3900 2N3900A

HL32 HF92 LL20
A47 A47

2N3903

LL26, HF64

2N3904

LL28,HF69

2N3905

LL24,HF64

2N3906

LL26, HF69

2N3909 FET9, 16, 19, 36,55

2N3916

P19

2N3917

P33

2N3919 2N3920 2N3921 2N3922 2N3924 2N3925 2N3926 2N3927
2N3932 2N3933 2N3934 2N3935 2N3946 2N3947 2N3953 2N3954 2N3955 2N3956 2N3957 2N3958
2N3959 2N3960 2N3961 2N3960 2N3962 2N3963 2N3964 2N3965 2N3966 2N3967
2N3968 2N3969 2N3970 2N3971 2N3972 2N3973 2N3974 2N3975 2N3976 2N3977
2N3978 2N3979 2N3980 2N3993 2N3994 2N3995 2N3996 2N3997 2N3998 2N3999
2N4000 2N4001 2N4002 2N4003 2N4004 2N4005 2N4012 2N4017 2N4018 2N4019
2N4020 2N4021 2N4022 2N4023 2N4024 2N4025 2N4030 2N4031 2N4032 2N4033
2N4038 2N4039 2N4040 2N4041 2N4046 2N4047 2N4048 2N4049

HL34, P30 HL34,P30
FET26 FET26 HF81 HF81 HF81 HF81
HF93 HF93 FET26 FET25 LL26,HF64 LL28, HF69 HF92 FET26 FET26 FET25 FET25 FET25
LL36, HF93 LL36, HF93
HF81 LL37, HF93
HF46 HF46 HF46 HF46 FET5 FET22
FET20 FET20 FETll FET7, 13, 15 FET6, 15
LL30 LL30 LL30 LL30
LL4
LL4 LL4 UJT2,3 FET6, 13 FET5, 15,21 HF85 P42 P42 P42 P42
P30 P30 P78 P78 P50 P50 HF81 A47 A48 A48
A50 A50 A50 A50 A50 A50 A22 A22 A40 A40
FET59 FET59
P30 P26 LL33 LL33 P96 P96

2N4050 2N4051
2N4052 2N4053 2N4058 2N4059 2N4060 2N4061 2N4062 2N4065 2N4066 2N4067
2N4070 2N4071 2N4072 2N4073 2N4075 2N4076 2N4077 2N4078 2N4079 2N4082
2N4083 2N8084 2N4085 2N4086 2N4087 2N4087A 2N4091 2N4092 2N4093 2N4104
2N4105 2N4106 2N4107 2N4117 2N4118 · 2N4119 2N4120 2N4121 2N4122 2N4123 2N4124 2N4125 2N4126 2N4136 2N4138 2N4220
2N4221
2N4222
2N4223 2N4224 2N4241 2N4260 2N4261 2N4264 2N4265 2N4267 2N4268 3N45 3N46 3N47 3N48 3N49 3N50 3N51 3N52 3N71 3N72 3N73 3N89 3N90 3N91 3N92 3N93

P96 P96
P96 P96 LL44 LL44 LL44 LL44 LL44 FET16 FET14 FET14
P58 P59 HF83 HF83 P43 P43 P22 P22 PllO FET27
FET26 FET27 FET26
A43 A47 A47 FET8 FET7 FET7 HF29
P6 P6
Plll FET28 FET30 FET33 FET16
LL34 LL34 LL26, HF64
LL28, HF69 LL24, HF55 LL26, HF64
Plll HF12 FET9, 16, 20, 39,51 FET9, 16, 21, 44,51 FETlO, 16. 22, 47,51 FET51,59 FET59
P47 LL36, HF93 LL36, HF94 LL29, HF69 LL29, HF69
FET14 FET14
P60 P60 P60
P60 P77 P77 P77 P77 LL20 LL20 LL20 FET38, 57 HF4
HF4 HF4 HF4

ELECTRONIC DESIGN

3N94

HF5

3N95

HF5

3N96

FET26

3N97

FET25

3N98

FET22

3N99

FET22

3Nll2

HF5

3Nll3

HF5

3Nll4

HFlO

3Nll5

HFlO

3Nll6

Hfll

3Nll7

Hfll

3Nll8

HFll

3Nll9

HFll

3N123

LL8

3N 124 FETlO, 16, 19, 35

3N125 FETlO, 16,21,43

3N126 FETlO, 16,22,46

151-04

HL12, P78

151-05

P78

151-06

HL12, P78

151-07

P78

151-08

HL12, P79

151-09

P79

151-10

HL12, P79

151-12

P79

151-14

P79

151-16

P79

151-18

P79

151-20

P79

152-04

HL12, P79

152-05

P79

152-06

HL12, P80

152-07

P80

152-08

HL12, P80

152-09

P80

152-10

HL12, P80

152-12

P80

152-14

P80

152-16

P80

152-18

P80

152-20

P80

153-04

HL13, P102

153-06

HL13, P102

153-08

HL14, P102

153-10

HL14, P103

153-12

HL14, P103

153-14

HL14, P103

153-16

HL14, P103

153-18

HL14, P103

153-20

HL14, P103

154-04

HL14, Pl03

154-06

HL14, P103

154-08

HL14, P103

154-10

HL15, P103

154-12

HL15, P104

154-14

HL15, P104

154-16

HL15, P104

154-18

HL15, P104

154-20

P104

154-24

HL15

156-04

HL25,P82

156-06

HL25, P82

156-08

HL25,P82

156-10

HL25,P82

163-04

HL9

163-06

HL9,P104

163-08

HL9, P104

163 -10

HL9, P104

163-12

HLlO, P104

163-14

HLlO, P104

163 -16

HLlO

163-18

HLlO, P105

163-20

HLlO, P105

164-04

HLlO, Pl05

164-06

HLlO, P105

164-08

HLlO, P105

164-10

HLlO, .P105

164-12

HLlO, P105

164-14 164-16 164-18 164-20 2013 3217 2318 3219
40022 40050 40051 40080 40081 40082 40084 40217 40218 40219 40220 40221 40222 40231 40232 40233 40234 40235 40236 40237
40238 40239 40240 40242 40243 40244 40245 40246 40250 40250VI
40251 40253 40254 40255 40256 40261 40262 40263 40264 40279
40280 40281 40282 40290 40291 40292 40305 40306 40307 40309
40310 40311 40312 40313 40314 40315 40316 40317 40318 40319
40320 40321 40322 40323 40324 40325 40326 40327 40328 40329

Hll 1, P105 40340

Hll 1, P105 40341

Hll 1, P105 40346

Hll 1, P106 40347

LL44 40348

LL44 40354

LL44 40355

LL44 40360

P27 40361 P27 40362

P27 40363

HF104 40364

HF104 40366

HF105 40367

· HF36 40368

LL32 40369

LL24 40375

LL29 40404

LL30 40405

LL29 A130

LL24 A37 A26 A37 A18 HF92 HF92 HF92

A301 A306 A307 A310 A311 A415 A466 A467

HF90 A472

HF90 A473

HF90 HF105 HF105 HF105 HF105 HF105
P39 P21

A490 A520/A521 A569 A570 All09 AD70 A1220 A1243

P82 A1341

A33 A1519

P27 AC121

P26 AC163

P26 A35

.

AC172 AF106

A42 HF46

AF109 AF127

P15 AF139

HF105 AFY34

HF83 AFY39

HF78 BC107

HF73 HF82 HF82 HF69 HF82 HF82 HF78
P19

BC122 BC410 BCYll BCY12 BCY30 BCY31 BCY32
BCY33

P39 BCY34

P19 BCY38

P39 BCY39 P46 BCY40 P19 BCZlO P20 BCZll P39 BCZ12 P20 BCZ13 P46 BCZ14 P20 80109

P20 BF140

P20 BF155

P46 BFY12

P20 BFY33

P39 BFY34

P82 BFY46

P20 BSY18

P20 BSY34

P46 BSY58

A41 BSY62

HF40 HF41 LL12
P20 P20 HF37 P81 P21 P21 P21
P81 P46 LL22 P21 P37 P60 P21 HF87 HF89 All
HF46 A21 A38 All All
HF55 HF78 HF69 HF83 HF83
HF91 A49 A25 A25 A32
HF105 HF88 HF82 A25 HF55
A18 A41 A42 HF57 HF65 A42 · HF82,85 HF94 HF82 A41
A26 A25 A21 A21
A6 A13 A18
A6 A14 All
A15 A31 A29 A29
A4 A7 A15 P30 HL38 HL38 PlO PlO PlO PlO HL38 HL39 HL39 LL37

ON READER-SERVICE CARD CIRCLE 41 ~

Total production control for top quality in Gold Bonding Wire (99.99%)
Every production step is repeatedly checked to assure Gold Bonding Wire that meets our traditionally high standards ...The same critical care is taken with the spooling and packing ··· The wire is respooled on precision winding equipment especially designed by our plant engineers ...Winding tension and pitch are fully controlled so that the single layer winding will not shift or slip ... Plastic case with dust-free cushion keeps spool safe in transit.

The single layer package is designed for:
400 feet of .0007"
400 feet of .001 o"
250 feet of .0015" 150 feet of .002"

Write for latest brochure
Sigmund Cohn Corp.
121 So. Columbus Ave., Ml Vernon, N.Y.

Since 1901
&

rugged

CDS-5 (To-5)
reliable
CDS-7
top performance

CDS-9
POWER MASTER PHOTOCELLS
Outstanding construction and design of Pioneer Photocells assure long-life and top performance. New heavy base (.080) allows compression glass to metal seal on leads, eliminates danger of air leakage and cell deterioration.
Available in one inch, half inch and To-5 sizes over a wide sensitivity range.
Consult us on special applications of photo sensitive layers.
Photocells pictured are actual size.

The Pioneer

Electric &Research Corp.

momm Subsidiary of

Controls, Inc.

715 Circle Avenue · Forest Park, Ill.

ON READER-SERVICE CARD CIRCLE 42
138

BSY63 C680

HL38 FET30

C681 C682
C683 C684 C685 C6690 C6691 C6692 CM600 CM601

FET31 FET37 FET37 FET43 FET44
FET3 FET3 FETl FET7 FET7

CM602 CM603 016E7 016E9

FET8 FET8 A46 A46

016Kl 016K2 016K3 01101 01102 01103

HF86 HF86 HF86 FET41 FET35 FET29

01177 01178 01179 01180 01181 01182
01183 01184 01185 01201

FET41 FET35 FET30 FET45 FET38 FET32
FET4,46 FET3,41 FET2,35
FET45

01202

FET38

01203

FET32

01301

FET4,47

01302

FET3,41

01303

FET21, 35

OE1004 FET5, 14, 49, 57

ON3066A

FET41,53

ON3067A

FET35, 53

ON3068A

FET30, 53

DN3069A

FET45, 53

ON3070A DN3071A

FET38,53 FET32,54

ONXl DNX2 DNX3 ONX4 DNX5 ONX6 ONX7 DNX8

FET41 FET32 FET28 FET45 FET38 FET32
FET4 FET3

DNX9

FET2

DTG411

P77

OTG600

P60

OTG601

P60

DTG602

P61

OTG1010 DTGll 10 OTG1200 DTG2000 DTG2100

PllO HL46 PllO PllO PllO

DTG2200 DTG2300 DTG2400 DTS413 OTS423 DTS430 DTS431

PllO PllO PllO PllO
P81 P83 P84

ED322 FllOO FI0049

HF69 FET15 FET5, 14

FK3299 FK3300 FK3502 FK3503 FK3.962

LL24 LL26 LL26 LL26 HF4

FK3964 FT34A FT348 FT34C FT340
FT57 FT207A FT2078 FT4017 FT4018 FT4019 FT4020 FT4021 FT4022 FT4023
FT4024 FT4025 FV3503 FV3962 FV3964 HA2000 HA2001 HA2010 HA2020 HA2030
KlOOl K1003 K1004 K1201 K1504 KM7000 KM7001 KM7002 KM7007 KM7008
KM7009 KM7010 KM7011 KM7012 KM7013 KM7014 KM7015 KM7016 KM7017 'MlOO
MlOl MA881 MA882 MA883 MA884 MA885 MA886 MA887 MA888 MA889 MA1702 MA1703 MA1704 MAl 705 MA1706 MA1707 MA1708 MCS2135 MCS2136 MCS2137
MCS2138 ME209 ME213 ME213A ME214 ME216 ME217 ME495 ME900 ME900A
ME901 ME901A ·MFE2093

HF5 HF37 HF37 LL20 LL21
FET60 P43 P43
HF55 HF55 HF65
A50 A51 A51 A51
A51 A15 LL26 HF4 HF5 FET14 FET49 FET5 FET23 FET27
FET58 FET60 FET39 FET58
FETl P39 P39 P39 P33 P33
P34 P34 P43 P43 P43 P43 P43 P43 P44 FET4, 13
FET5, 13 A16 A26 A39 A45 A7 A16 A26 A39 A45 A48 A46 A48 A48 A46 A48 A48
LL21, HF37 LL21, HF37 LL21, HF37
LL21, HF38 A51 A38 A47 A51 A25 A38 A47 A21 A38
A39 A39 FETlO, 17,

MFE2093 MFE2094
MFE2095
MM709 MM1941 MM1943 MM1945 MM2102
MM2103 MM2483 MM2484 MM2503 MM2550 MM2552 MM2554 MP500 MP500A MP501
MP501A MP502 MP5Q2,A MP504 MP504A MP505 MP505A MP506 MP506A MP2060
MP2061 MP2062 MP2063 MPS706 MPS834 MPS918 MPS2711 MPS2712 MPS2713 MPS2714
MPS2715 MPS2716 MPS2894 MPS2923 MPS2924 MPS2925 MPS2926 MPS3392 MPS3393 MPS3394
MPS3395 MPS3396 MPS3397 MPS3398 MPS3563 MPS3639 MPS3640 MPS3646 MPS3707 MPS3708
MPS3709 MPS3710 MPS3711 MPS3721 NPC514 NS661 NS662 NS663 NS664 NS665
NS666 NS667 NS668 NS731 NS732 NS733 NS734 NS1110

19, 32 FETlO, 17,
19,37 FETlO, 17,
20,43 LL29, HF69
HF85 HF82 HF78 FET15
FET15 HF23 HF23 HF91 LL36, HF91 LL36, HF91 LL36, HF91
P96 P97 P97
P97 P97 P97 P97 P97 P97 P97 P97 P98 P63
P63 P63 P63 LL24, HF56 LL30, HF73 HF85 A17 A34 LL26 LL27
A17 A34 LL33, HF78 HF56 HF56 HF56 A18 A43 A37 A27
A43 A37 A27 A27 HF85 LL33, HF82 LL34, HF82 LL30 MO A23
A23 A37 A45 A30 P15 A25 A12
,A7
Al'
A25
A12 A7 Al A5
A22 A5
A23 LL27

ELECTRONIC DESIGN

NSll 11 NS1355
NS1356 NS1500 NS1510 OC22 OC23 OC24 OC26 OC30 OC44 OC45
OC58 OC59 OC60 OC71N OC74 OC75N OC79
OCBO
P102 P1003
P1004 P1005 PAlOOO PAl 101 PADT50 PADT60 PT3500 PT5692 PT5.694 S15649 S1565.0 S15657 S15658 S15659 S15660 S18100 S18200 SA310 SA311 SA312
SA313 SA314 SA315 SA316 SA410 SA411 SA412 SA413 SA414 SA415 SA416 SA537 SA538 SA539 SA540 SA2253 SFT323 SFT325 SFT337 SFT353
SFT367 SFT377 SFT440 SFT445 SJ993 SJ1034 SJ1127 SJ1158 SJ1159 SJ5898 SP10800 SP10801 SP10810 SP10811 SU2078 SU2079

LL27 HF37
HF37 LL27 LL27 HL25 HL25 HL26 P44 P21 HF17 HF12
A27 A35 A29 A24 A33 A37 A23 HL25 FET52 FET40
FET45 FET48
A40 A26 HF16 LL45 P21 P51 P37 HF12 A49 HF87 HF87 HF87 A29 . LL22 LL18 HFlO HFlO HF7
HF5 HF5 HF8 HF6 HFlO HFlO HF8 HF6 HF6 HF8 HF6 LL45 LL45 LL45 LL45 A14 A29 A21 HF3 A29
P4 P5 HF46 HF56 UJT2 UJTl UJT2 UJTl UJTl UJTl P14 A51 A51 A51 FET26 FET25

May 17, 1966

~oTM&~~ &~~ ~o~&~~
~~@ ~~~~@@~
LOW-NOISE AMPLIFIER AND OSCILLATOR

AMPLIFIER NOISE FIGURE - 6 db @ 1.5 Ge. AMPLIFIER NOISE FIGURE - 7 db @ 2 Ge.
CLASS 11 A" OSCILLATOR - 1 WATT OUTPUT @ 1 Ge.
THE K 1201 MOS FET
4.5 db max. System Noise Figure at 450 me, 45 db AGC range, 400 niv Dynamic Range giving 1% cross-modulation. Selected Gm's to 3000 umhos minimum. All Kmc MOS transistors are produced with our exclusive MEGA-STABL process, for extra stabi Iity.
IMMEDIATE DELIVERY ON:

2N2857

2N3683

2N3953

2N3880

2N3570

2N3571

2N3572

~ lliJiJ CS TUNNEL DIODES

Back diodes . . . down to 25 microamps. Low-noise microwave diodes in Ge, GaSb and GaAs to
50 Ge., LO K - factor max. @ fro = 50 Ge.

KMC MANUFACTURES SEMICONDUCTOR DEVICES ONLY, AND IS NOT YOUR "BLACK-BOX" COMPETITOR.
FOR CATALOGS AND SPECIFICATIONS · · · WRITE OR PHONE

PARKER ROAD, LONG VALLEY, NEW JERSEY (201) 876-3811

ON READER-SERVICE CARD CIRCLE 43

139

We don't recommend our young friend's technique but we do applaud
OW t his resourcefulness. Because we at IERC figure we're pretty resource-
~;o.lJea ful at "beating the heat" too. We should be, because we go at it quite
i[Oet seriously. · The result is the most efficient heat dissipating devices for
ea electron tubes and semiconductors you'll ever see. Shucks, why be
H modest? We make more styles, versions, models, types, sizes, and kinds
than anybody else in the business. In fact, we started the whole heat dissipating shield
J business 12 years ago. · We've got a bushelful of reasons why you
I should use IERC heat dissipators in your circuit designs - such as better I performance, longer life, simpler circuits, lower costs, and so forth. ·· .

nm ~ 0 And application ideas you probably never dreamed of.

Just mark our number on the magazine reply card

INTERNATIONAL
EL~~~~i>R~~

and you can see for yourself.

~~v~~:~:~~~. ,35 w. MAGNOLIA

cALIFORNIA 91 5ii2

First in a pictorial series of unique solutions to the problems of heat, by IERC. Dept. ED-56.

ON READER-SERVICE CARD CIRCLE 44

HEAT BEATERS
PERMACEL® Film Tapes of Kapton* provide outstanding thermal endurance, physical and dielectric strength in a wide range of hightemperature applications. At 200°C, these tapes have far greater tensile strength than any other available films. "Strength-with-thinness" makes them ideal for miniaturization and other critical insulating jobs. Two types, in 1
and 2-mil thicknesses, in 36-yard rolls from 112" to 17" wide. Write Dept.
919 for details and free sample.
*Du Pont trademark for its Polyimide Film

PERma~EL.:

T A P E S ~+""""' New Brunswick, N.J. 08903 a

company

140

ON READER-SERVICE CARD CIRCLE 45

SU2080 SU2081 T404 Tl156
Tl158 Tl159 Tl160 Tl161 Tl162 Tl407 Tl408 Tl409 Tl411 Tl537
Tl538 1"1539 Tl540 Tl3027 Tl3028 Tl3029 Tl3030 Tl3031 TIP14 TIS05
TIS14
TIS25 TIS26 TIS27 TIS34
TIX3016A TIX3024 TIXM101 TIXM103 TIXM104
TIXS09 TIXSlO TIXS.11
TIXS33 TIXS35
TIXS36
TIXS41 TIXS42 TN53 TN54
TN55 TN56 TN57 TN58 TN59 TN60 TN61 TN62 TN63 TN64 TN79 TN80 TN81 TN237 TN238 TW135 U89 UllO U112 U114
U133 U139 U139D U146 U147 U148 U149 U168 U182

FET26 FET25
LL5 P38
P38 P5 P5 P5 P5
HF79 HF70 HF70 HF37 HF29
HF20 P38 P38 P91 P91 P91 P91 P91 P26
FET6, 12
FETlO, 13, 39, 55,58 FET25 FET24 FET24
FETlO, 15, 22, 47,55,59 HF106 HF93 HF93 HF94 HF93
HF105 HF105 FET2, 15, 23, 49,56,57 FET7, 12 FETlO, 15, 22, 48,56,60 FET8, 14, 22, 48,56,60 FET8, 12 FET7, 12
HF38 HF38
HF14 HF14 HF14 HF14 HF38 HF38 HF38 HF38 HF38 HF38
LL17 LL17 HF56 HF38 HF38 LL12 FET39, 57 FET32 FET42 FET31
FET36 FET6 FET6
FET48 FET48 FET49 FET49 FET40, 50 FET8, 13

ELECTRONIC DESIGN

U1B3 U1277 U127B U1279 U12BO U12Bl U12B2 U12B3 U12B4 U12B5 U12B6 U12B7 U1325 UC20 UC21 UC22 UC23 UC40 UC41 UC42 UC43 UC200 UC201 UC210 UC220 UC240 UC250 UC251 UC400 UC401 UC410 UC420 UC450 UC451 UC701 UC703 UC704 UC705 UC707 UC714 UC750 UC751 UC752 UC753 UCBOl UCB03 UCB04 UCB05 UCB.07 UCB14 UCB50 UCB51 UCB52 UCB53 UCB54 UCB55 UDlOOO UD1001 UD1002 UD1003 UD2000 UD30.05 UD3006 UD3007 V120 V120RH V220 V221 V222 V600 V601 V602 V610 V611 V612 VBOO VX3375 WS154

FET46 FET43 FET39 FET35 FET32 FET4B FET47 FET44 FET36 FET31 FET33 FET4B FET37 FET37 FET33 FET37 FET33 FET35 FET30 FET35 FET30 FET4B FET7 FET47 FET43 FET44,54 FETB FET7 FET47 FET5 FET44 FET39 FET7 FET6 FET32 FET33 FET35 FET39 FET46 FET46 FET29 FET31 FET36 FET42 FET30 FET30 FET33 FET36 FET42 FET36 FET32 FET42 FET2B FET30 FET33 FET37 LL16
LLB LLB LLB LL9 LL24, HF56 LL24, HF56 LL25, HF56 LL36 LL45 LL45 LL45 LL45 P23 P23 P23 P30 P30 P31 P3B P26 HF56

May 17, 1966

HALF THE SIZE ···

HALF THE WEIGHT ...

HALF THE COST ...
FULL 2 WATT RATING ...

0.032 DIA SILVER LEAD
====DJ==~
H 0.175

8 _J_
0.090
T

LPM, LPMX SILICON MOLDED DIODES ARE LOW-COST REPLACEMENTS FOR ONEWATT METAL ZENER DIODES.

SEMCOR'S new LPM, LPMX silicon molded diodes are lowcost replacements for 1-watt metal zener diodes. Half the size, half the weight, and available at half the cost of conventional one-watt devices,, SEMCOR'S new molded 2-watt zeners have almost limitless military and commercial applications.

VOLTAGE CHARACTERISTICS

Ez

I~

I

~ Ez -J4ll Er

Ir

Ef

--

--

--

A lz - - _jlz

LPM's non-conductive epoxy body is capable of withstanding Mll-S-19500 environmental requirements. It has a full 2-watt rating. In tel'lms of temperature shock, the devices are taken through temperature cycling from -55 °C directly to 200°C before they are electrically tested.
LPMX, identical with LPM but with only zener voltage measured at the specified current, costs even less than the LPM.

.V..i'
:( 7·5.,.._.___,._ _P_O_W-ER-RA-T-IN_G_V-S.--

!
~ 2.0

AMBIENT TEMPERATURE

;::
~ 1.5 1 - - - 4 - - + - - - . . - - - - + - - - - + - - - 1

iii
"0' 1.0 1---4--+----l----+-'I~-+----'

1¥

~ 0

0 . 51----1---+---+---+--~-·

a.

s< 0 ~C-1--1.25---5~0-~75--1~00--12~5-1-'50

1¥
AMBIENT/CASE TEMPERATURE (oC)

~ q c~::~::~:~· /LIOmJ'ln!'J.1 . ~tJO//llJUIA

~

PHOENIX,ARIZONA85019

INC.

PHONE: 602-272.13.Cl

TWX: 602-255.0479

ON READER-SERVICE CARD CIRCLE 46

141

.. .new value from new pricing
on hot carrier diodes from hpa
Ultra-fast switching with hp associates 2900 Hot Carrier Diode is now more economical than ever. New production techniques and experience have reduced the cost of these popular devices, and the savings is passed on to you.
The performance characteristics and pricing listed in the chart make the hpa 2900 ideally suited for use in TV tuners, commercial communications limiters,
detecto~s and mixers, and multiplexing
in signal processing. Contact your Hewlett-Packard field
engineer for complete data.

TYPICAL SPECIFICATIONS, hpa 2900

Forward Current lr1

Breakdown Voltage BVR

20 ma min . @ VF =1.0 v 1.0 ma min . @ VF =0.4 v

10 v @ IR =10 11a

Leakage Current IR
100 na @ VR =-5.0 v

Lifetime
T
100 ps

Price
1 to 99 , $3 .00 100 to 999, $2.25

Data subject to change without notice. Prices f. o. b. factory.

142

ON READER-SERVICE CARD CIRCLE 47

ELECTRONIC DESIGN

Low-cost way
to solid state

G-E economy line semiconductors

· Today, low-cost sol id state is a reality for dozens of applications never before thought possible. The reason: G-E economy line semiconductors.
Now, for under $2.00, a single G-E Triac can control a 600-watt load. Yet, less than 10 years ago, it would have taken two $145.00 SCR's.
G-E economy transistors cost as little as 15¢ each. Many high-sensitivity SCR's, less than ha If a dollar.
And today you can buy one kind of rectifier to perform a number of different functions. New G-E A14 rectifiers will work almost anywhere you

Economy transistor

New A14 · low-current
rectifier i

Triac

Actual size General Electric economy line semiconductors

need dependable, low-power rectification.
Surely you have at least one application problem that ought to be solved by low-cost sol id state. Ask your G-E engineer/ salesman or semiconductor distributor about it ·.. and the application experts they can call on to help you.
Or write to Section 220-32, General Electric Company, Schenectady, N. Y. In Canada: Canadian General Electric, 189 Dufferin St., Toronto, Ont. Export: Electronic Component Sales, IGE Export Division, 159 Madison Ave., New York, N. Y.

SEMICONDUCTOR PRODUCTS DEPARTMENT

GENERAL. ELECTRIC

May 17, 1966

ON READER-SERVICE CARD CIRCLE 48

143

Selecting a thyristor to fill a control need
doesn't have to be a difficult choice. These guidelines to the why, where and how of applications simplify the job.

When it comes to switching power or controlling phase, think thyristor. No other family of semiconductor devices offers such a wide choice of suitable designs with comparable efficiency, reliability, flexibility and simplicity.
In most cases the differences between thyristors and other semiconductor types is clear-cut. However, many users are not nearly as confident when it comes to selecting from among thyristors alone. At first glance, there appears to be some overlap in the differing thyristor roles. For example, one might ask, "Where does the SCR end and the Triac begin?"
The answer to this and similar questions lies in a detailed examination of the thyristor family tree:
· The silicon-controlled rectifier (SCR). · The silicon-controlled switch (SCS). · The gate-turn-off switch (GTO). · The four-layer (Shockley) diode, the siliconunilateral switch (SUS) and the silicon-bilateral switch (SBS). · The light-activated SCR (LASCR). · The three-element, static, ac switch (Triac). In each case let us consider first the salient characteristics of the device, then its governing design parameters, and, finally, the major application areas for which each has been tailored.
Understanding and using SCR parameters
The SCR is a regenerative device of pnpn construction with three external connections.1 To get the most out of this unit and to be able to select the best SCR for an application, one must have a good working knowledge of the basic parameters. The maximum allowable ratings of thyristors are listed on manufacturers' specification sheets, so the designer sees at a glance the one or two devices that are within his specifications. Here are the definitions of the maximum allowable ratings that are usually encountered on the specification sheets:
· P F V -The peak forward voltage rating is the maximum allowable instantaneous value of forward voltage that may be applied between anode and cathode without risking damage to the device if switching to the ON state occurs.
· V F'XM-The peak forward blocking voltage
James L. Brookmire, Applications Engineer, General Electric Semiconductor Products Dept., Auburn, N. Y.
144

rating is the maximum allowable instantaneous value of forward blocking voltage, including transient voltages, which will not switch the SCR to the ON state. This specification usually states a definite impedance between gate terminal and cathode, or a specific bias voltage.
· VROM(revJ-The repetitive peak reverse voltage rating (with the gate open) is the maximum allowable instantaneous value of reverse voltage, including all repetitive transient voltages -but excluding all nonrepetitive transient voltages-that may occur across the SCR.
· VROM(non- r evJ-The nonrepetitive peak reverse voltage rating (with the· gate open) is the maximum allowable instantaneous value of reverse voltage, including all nonrepetitive transient voltages-but excluding all repetitive transient voltages-that may be applied across the SCR. This rating is slightly higher than V ROM(repJ for each specific voltage rating of an SCR type.
Narrow down thyristor selection problems. Optimize and simplify your power and control designs by using Author Brookmire's guide to distinguishing between members of the thyristor family.
ELECTRONIC DESIGN

· V 07·-The gate trigger voltage rating is the de voltage between the gate and the cathode required to produce the de gate trigger current.
· IF rms-The rms forward current is the maximum steady-state rms current that the device is rated for. The rms or effective value in this specification is independent of waveform.
· IF( Av;-The maximum average forward current depends upon the conduction angle and is usually given in chart form. The chart shows maximum allowable case temperature vs average current for either de or various conduction angles of a sinusoidal waveform.
· I FM(surue;..--The peak one-cycle surge forward current, nonrepetitive, is the maximum allowable peak current through the collector junction for a positive anode to cathode voltage. This specification is for a single, forward, half cycle (8.3 ms) in a 60-Hz resistive load system. The surge may be preceded and followed by maximum reverse rated voltage, current and junction temperature conditions, and maximum allowable gate power may be concurrently dissipated. However, limitations on anode current during switching should not be exceeded.
· l"x-The holding current is the minimum current through the collector junction required to maintain the SCR in the ON state for specified conditions and load. The gate terminal is tied to the cathode through an impedance or bias voltage.
· I Gr-The de gate trigger current is the minimum de gate current required to cause switching from OFF to ON for a specified anodeto-cathode voltage, junction temperature and gate impedance. This is one of the most important specifications, for one should always design for the maximum gate current required to fire the particular device, unless selected units are desired.
· l 2t-This is the maximum allowable forward nonrecurring overcurrent capability for pulse durations greater than a specified time (usually given in milliseconds). Unit I is therms amperes,
and t is the pulse duration in seconds. This spec-
ification is for applicable fusing of the device used. · tof~The circuit-commutated turn-off time is
the interval between the time when the forward current decreases to zero and the device voltage reaches zero and is rising to a stated value of forward blocking voltage (at a stated rate of rise without turning on during switching). This is usually stated for specific conditions of junction temperature, gate impedance, etc.
Don't underestimate rate of rise
Two other SCR specifications that are very important in device selection are di' / dt and di / dt. Dv/ dt is the rate of change of voltage, with respect to time, that is applied to the anode-cathode junction. Note that any pn junction has capacitance, and the larger the junction area the higher this capacitance. It follows then that the charging current to this capacitance is equal to C dv / dt. I f a step function of voltage (line transient) is impressed across the anode to cathode of the thyris-
May 17, 1966

10

NOTES'(!) CURVES SHOWN ARE FOR VARIOUS

JUNCTION TEMPERATURES

c.st
~ 2.0 1----+----<>---:::!...._+--~..,.........::s...------. w a:
3a: 1.0l----1-=::-+---+-~~~-~8-==~.----y---..,.-~

4 _______._____.___..__...___.______.____.

100 200

500 IOOO 2000 5000 10,000

50,000

20,000 100,000

GATE TO CATHODE RESISTANCE-(OHMS)

1. Holding current is what keeps an SCR in the conducting state. It is a function of gate-to-cathode resistance and temperature, and is a critical parameter in low-power systems and switching circuits.

tor, the device may inadvertently switch on, due to the triggering action of this charging current.
The definition of the rate of rise of the anode voltage (dv/ dt) is the slope of a straight line starting at zero anode voltage and extending through the one-time constant point on an exponentially rising anode voltage. Methods used to increase the SCR's dv / dt capability are: select a higher voltage unit for the application; reversebias the gate with respect to the cathode, or provide a series-RC network across the anode-cathode junction to slow the rate of rise of the anode voltage transient.
Di/ dt is the rate of ris~ of the anode current with respect to time. In some cases where di/dt is faster than the time required for the junctions to . reach a state of full forward conduction (at uniform current density), localized hot-spot heating will occur in the junction region that has begun to conduct. This may cause excessive temperature rise and subsequent device failure.
Several methods may be utilized to reduce the harmful effect of di/ dt.2 To cite a few: seriessaturable reactors that limit the rise of current during the initial period of turn-on; small resistances placed in series with the anode-cathode, and combinations of these two remedies.
Other parameters, such as storage temperature, delay times, leakage currents, turn-on times and other voltage ratings, are generally less important in most applications. Moreover the specification sheets usually contain several charts that refer to these factors and to the instantaneous voltagecurrent relationships, power dissipation vs conduction angles, maximum allowable ambient temperature vs average forward current for rectangular waveshapes, and gate trigger current vs gate pulse width, among others. These charts or graphs are usually self-explanatory and give insight into how the device will perform in (specific) applications. An example of such a graph is one showing holding current vs gate-to-cathode impedance for the C5 SCR (Fig. 1). This charac-

145

teristic is especially important in low-power control logic and switching applications.

A model of SCR behavior

To obtain a basic understanding of how an SCR works, one may analyze its equivalent cfrcuit. Since the SCR and all other thyristors are pnpn structures, a two-transistor analog may be used (Fig. 2) .3 Figure 2a (from left to right) shows the four-layer structure with the three external connections. Figure 2b displays the two· complementary transistors tied in such a way that collectors and bases of like material, either porn, form a regenerative feedback connection. The complete transistor analog appears in Fig. 2c.
The total anode to cathode current, IA, equals the sum of I c1 and I c2· It is expressed as

I A= (I +hFE 1 ) (1 +hn 2 ) U co1 + I co2 )

(1)

1 - (hFE l h FE2 )

With proper bias applied to the transistor pair (positive anode to cathode voltage), h FE1 and h FE2 are both low, and their product is much less than unity. This condition exists because the only currents involved are the leakage currents, which are innately small. And because h FE is directly proportional to the collector current, these current gains are also small. Thus the equation develops a value of I A that is only slightly higher than the sum of I co1 and I co2· This mode of operation .in a pnpn structure is referred to as the forward blocking state, or the OFF condition.
Now, if the product of h FEi and h FE2 is made to approach unity, the numerator of Eq. 1 approaches infinity and rapid regeneration takes place. Here the current builds up and drives both transistors to their saturated states, causing the thyristor to unblock or turn ON. The anode-tocathode voltage becomes low and is the total drop of the three junctions indicated in Fig. 2a.

p

p

i1c1

N

N

N

GATE

G

p

G

N

N

CATHODE

c

c

0

®

©

2. The SCR is a pnpn structure with three external connections (a). It may be represented by two interconnected complementary transistors (b). The complete 2-transistor analogy (c) shows current flow and the regenerative feedback connection.

146

This condition of regeneration may be made to occur by increasing the temperature of the pnpn junction in such a way that the leakage currents become high enough to provide switching action by themselves. Another method is to increase the anode-to-cathode voltage, which again increases the leakage currents. The technique mainly used in the SCR is to provide a positive gate-to-cathode voltage (external base current to Q1), which causes an unblocking state to be reached by transistor action.
It is interesting to note that in some SCR specifications a maximum impedance to be applied between gate and cathode is usually specified. This is to insure that the SCR will block under a specific junction temperature and for a given forward voltage between anode and cathode. This impedance is necessary to divert part of I c2 (mostly leakage current) away from the base of Q1, so that regeneration will not occur during the blocking mode.
Charting the application course
Let us now see how to use the parameter data · given on specification sheets. We may consider the SCR as a two-circuit link-the gate section (input) and the anode portion (output). Note that the cathode is· common to both.
Figure 3 shows the gate-triggering characteris-

111 I I T

16 1--T"T-.,r-+--+---i MIN . GATE CURRENT REQUIRED TO

iii TRIGGER ALL UNITS AT

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5 .0 WATTS

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NOTEs:u )CASE TEMP.= -65°C TO +125°C
(2) SHADED AREAS REPRESENT LOCUS OF POSSIBLE TRIGGERING POINTS
_.__.___ _ _ _F_R_O_M_-6_5_°C..._T_O_+_l2~5-°C...__ ___.

0

0.4

0.8

1.2

1.6

2 .0

2 .4

INSTANTANEOUS GATE CURRENT- (AMPS)

3. Gate triggering characteristics for a typical SCR (type

C35). Note that a locus of firing points exists. Observe

that temperature, a major factor on the triggering re-

quirements, should be accounted for in the design.

ELECTRONIC DESIGN

tic of the C35 SCR family. The equivalent circuit between the SCR's gate and cathode terminals consists of a low-voltage pn junction with some series resistance. Thus the gate characteristics may be considered to be those of a modified silicon pn junction.
The small shaded area in Fig. 3 is enlarged in the upper portion of the graph. This area represents the locus of all points where triggering of all types of SCRs in the C35 family (C35U through C35N) will occur over the junction temperature
range of - 65 °C to +125 °C. The boundaries of
the locus are also shown for operation over lesser temperature ranges. For example, note that a minimum gate current of 40 mA is required at 25 °C to fire all units, whereas at -65 °C, 85 mA is needed. A minimum gate signal of three volts is required for reliable triggering at both temperatures. It is imperative that the circuit designer stay out of "shaded areas" to guarantee that 100 percent of the units will trigger. It is recommended that the trigger point be slightly above and to the right of the top-right corner of the shaded area (point T).
The preferred trigger area is bounded by the dotted peak-power dissipation curve and the outer limits of the shaded area. When operating with de trigger signals, be sure that the steady average gate power dissipation rating isn't exceeded.
The load line of the trigger source should pass through the preferred area of the gate characteristic graph so that the triggering signal is as close as possible to either the average .power dissipation (for de triggering) or to the peak power dissipation (for pulsed cases). The rise time of the trigger signal's leading edge should also be as fast as possible. Fast-rising, high-amplitude gate signals reduce anode switching time and minimize switching dissipation and jitter. This is especially desirable when switching into high anode currents. When the gate is driven with some intermediate type. of waveform, such as a rectangular pulse, the

average gate power is determined by computing the duty cycle and multiplying it by the peak power value of the pulse. The product should be less than the rated average gate power dissipation of the .SCR.
The gate source is established by the opencircuit, gate-source voltage at zero current and the shorted circuit current that is produced by the source voltage, divided by the source impedance.
One may easily visualize what actually occurs during a pulsed-gate triggered condition. The EI dynamic curve before triggering starts at the origin of the graph and sweeps out to intersect the trigger source load line. At some lesser value of current than that given by the intersection of these two curves, the SCR triggers.
The case for de over rms
For another example of how to use the specification sheet in designing with SCRs, refer to Fig. 4a. This graph shows the maximum allowable case temperature vs average forward current for different current conduction angles for a sinusoidal voltage waveform applied between the anode and cathode of the C35 SCR. Note that the current is not rms but average de. One reason average values are used is that it is much easier to measure average current with a de ammeter than to find a meter that will read the rms value of a phasecontrolled current. Curves are available that easily convert the average value to an rms value for any conduction angle. The specification sheets for leadmounted SCRs (like the C5 and C106 types) also give the curves for ambient temperature vs average current, since separate heatsinks are not generally used with these devices.
It is very important to appreciate the difference between case temperature and junction temperature. Junction temperature always is higher than case by an amount determined by the thermal resistance (e) of the device. Parameter e is

E 120~""".~...l ' l

NOTES: (I) DC, 14> , 34>, 64> CIRCUIT- RESISTIVE OR INDUCTIVE LOAD, 50 TO 400Hz
(2) 11.0 °C PER WATT MAXIMUM THERMAL

I

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RESISTANCE CASE TO AMBIENT (3) RATINGS DERIVED FOR 0.5 WATT ·~·

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AVERAGE FORWARD CURRENT-CAMPS)
0

4. Maximum allowable case temperature for sinusoidal currents is a function of conduction angle. Note that the current decreases (for a given case temperature) as the conduction angle decreases. This is because the ratio of rms to average current increases as the conduction angle

May 17, 1966

l4 FIN SIZE

NOTES: (I) RESISTIVE OR INDUCTIVE LOAD,

~"x 6" ~~+--+--+--+--~

50 TO 400 CPS FREE CONVECTION

'\J (j)n.. I 2 ~"xS" , h._

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1-

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COOLING.

(2) CURVES SHOWN ARE FOR 180° CONDUCTION ANGLES. FOR OTHER

CONDUCTION ANGLES MULTIPLY CURRENT

VAWES BY FOLLOWING FACTORS:

120°-0.91

9 0 ° - 0.8 2

(3)

ALt6?¥01°N-s01 l.7~2~"

3 0 ° - 0.5 8 THICK COPPER

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~

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WITH EMISSIVITY = 90% STUD MOUNTED DIRECTLY TO
COPPER FIN,MINIMUM FIN
SPACING =3/4".

i ~
... 2

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20 40 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE (°C)
@
decreases. Thus, average current must be derated to keep Tease constant. Data in a plot of maximum forward current vs ambient temperature for various fin sizes (b) is used to help maintain the junction at a proper operating temperature.

147

expressed in degree C rise-junction to case-per watt of dissipated junction power.
Since average heating in the device is determined to some extent by the rms current flowing, the more watts that are generated, the higher the average temperature difference will be between the junction and case. Since the ratio of rms current to average current increases at smallerconduction angles, the allowable average current for a given case temperature must decrease as the conduction angle decreases, if constant rms is to be maintained. This derating at small conduction angles also ensures that the peak junction temperature of the device is not exceeded. Remember that small conduction angles lead to high peak power as well as high average power and that high peak power means high peak junction temperatures. A similar derating is necessary with rectangular current pulses.
Note in Fig. 4a that the case temperature is absolute and defines the thermal gradient between case and junction. For example, if one selected an average current of 8 A at a 30° conduction angle, the maximum allowable case temperature would be 60 ° C, and one could assume that the junction was close to its rated value of 125 °C. Since this particular device usually requires a heatsink to achieve any practical efficiency. the thermal resj stance from case to heatsink (°C/ watt) and the thermal resistance from heatsink to ambient must be known before values of current for specific ambients can be selected. The curve shown in Fig. 4b has already accomplished this for various fin sizes. It shows the maximum allowable average current, for various conduction angles and different heatsinks, that may be used with the SCR, so as to maintain proper junction temperature.
So much for the input circuit design. Let us turn now to the output circuit, starting with the role of the load.
Device trade-offs based on load
A realistic method for selecting the right device is to investigate the characteristics of the loarl. Let us then look at three types of typical loads and examine the requirements of each. They are:
1. Incandescent lamp load operating from ac supplies.
2. Resistance loads of a power factor greater than 99 percent, also operating from ac supplies.
3. Inductive loads (phase control of motors, static switching, etc.) with both ac and de supplies. · Incandescent lamps or tungsten loads.
Two major problems exist for the lamp load applications. First, the in-rush current due to a cold filament condition can be 15 to 20 times more than the steady-state current of the lamp for a single cycle of operation. This means that the SCR or Triac selected should be able to handle the trarisient in-rush current.
The second problem occurs when the lamp burns out. In this case the lamp filament at burnout has a tendency to arc, thus drawing large amounts of current for a short time interval. An
148

example of a potential misapplication would be to select an SCR that satisfied the steady-state load requirements of the lamp, plus in-rush conditions due to a cold filament, but was unable to handle the burnout condition with high enough reliability. Therefore an SCR of higher power than that required for steady-state conditions should be selected to handle the burnout. · Non-incandescent resistive loads with a power
factor of 99 percent or greater. With resistive load applications, di/ dt and / 2t are generally not problems, since there is no inrush or burnout condition. The device must be selected on the basis of rms-supply voltage and load current. Sufficient heat-sinking must be provided to keep the junction temperature within specifications. In some cases especially when using Triacs) the system inductance (leakage reactance of transformers for instance) can cause some concern. If enough inductance exists in the voltage source supplying the load, commutation dv/ dt can be a problem. The inductance causes a leading phase shift between the voltage applied to the thyristor and the current through it. This means that at the instant the current becomes zero for one polarity of conduction, a voltage is suddenly applied across the device in the opposite polarity. At this instant the thyristor to which forward voltage is applied may conduct, if the rate of rise of the applied voltage is higher than the dv/ dt rating of the device. Since control is lost if this happens, external circuitry would be needed to suppress the rate of rise of the applied voltage to within the pre-
scribed dvI dt rating of the device. A simple RC
network in parallel with the thyristor does this. · Inductive loads.
One good example of an inductive load is a de motor driven from an ac supply. Here, an SCR would normally be the logical choice for the following reasons:
POWER SCR

A.C. LINE

L
LOAD R

5. Time-extended trigger signals must be supplied to the gate of the power SCR in inductive load circuits. Achieved by a separate control transformer, it permits sufficient current build-up in the power SCR to guarantee latching. Alternatively, a series of pulses or a rectangular pulse may be applied to the gate.
ELECTRONIC DESIGN

Table 1. Classifying SCRs by application Category Light-industrial SCRs

SCR properties
Narrow temperature ranges. Low to medium current ratings. Normal turn-off times.

Heavy industrial and Military SCRs High-frequency SCRs

Wide temperature ranges. Highest current-handling capability. High voltage ratings.
Rapid turn-off. High current-handling capability. Medium voltage ratings.

Device characteristics
Passivated structures. Available in plastic case. Typical features (C106):
2 A rms, 25-200 volts. Typical medium current unit (C35):
35 A rms, 25-800 volts.
Usually a metal-encased unit. Typical features (2N2542):
235 Arms, 25-800 volts , -40 ° Cto+ 125 ° C.
Frequency response approaches 50 kHz. Typical features (C141):
35 A rms, 25-400 volts, 10 µs turn-off.

1. With the larger de motors, the voltage requirement is beyond the range of power transistor technology.
2. The power transistor for the smaller motor applications requires separate rectification of the ac voltage supply. If SCRs are used instead, they rectify as well as control.
3. In most cases of de motor speed control, the power loss in the SCR is minimal, compared with the needs of a power transistor operating from a de supply.
4. The locked rotor condition at turn-on is a severe problem, because the only circuit resistance at this time is the motor armature resistance. The SCR inherently has a higher multicycle surgecurrent rating than that of a power transistor of comparable steady-state ratings. Therefore it is more capable of handling this problem.
For most motors, ac or de, the problem of commutation dv / dt exists. The use of an RC circuit across the SCR or Triac will limit the rate of rise of the voltage across the device. In full-wave bridge applications for de motors, the motor inductance causes a holding current to flow through the SCR during the time the supply voltage goes through zero, thus preventing commutation. A free-wheeling diode placed across the load shunts this current away from the SCR, thereby permitting it to commutate properly.
One must also consider the effect of the gate circuit when an inductive load is to be driven. If pulse firing is used, the inductance of the load may prevent sufficient current build-up through the thyristor to ensure that it stays on when the gate pulse is finished. To eliminate this possibility, it is necessary to supply the gate with a sustained trigger signal that lasts as long as the thyristor is conducting (during each forward half-cycle). A typical way of doing this is shown in Fig. 5. The pulse transformer fires into the resistive gatecathode of the pilot SCR, which in turn fires the power SCR at the desired time. This method is suitable regardless of load power-failure.
May 17, 1966

Next consider the application itself. Here,
factors other than load are used to categorize
SCRs. The primary determinants are current, voltage, temperature and switching speed.
SCRs breakdown into 3 types
Today's SCRs can be generally classified under three basic categories: light-industrial types, heavy industrial and military units, and highfrequency devices (see Table 1).
The light industrial SCRs (Fig. 6a) are usually characterized by narrower temperature · ·ranges, low-to-medium current ratings, and normal turnoff times. Low-current devices of planar-passivated structure are now entering this field. These SCRs are characterized ~ plastic molded cases and are relatively low priced. The planar construction gives a much higher gate-drift stability with junction temperature than the normal, diffused types. Note that this type of SCR may be selected with a tab heatsink. One may visualize the difference in size, case construction, and costs involved by comparing it with the medium-current unit (Fig. 6b).
The heavy industrial and military types are characterized by wide temperature ranges, high current handling capacities, and high voltage ratings. Representative of this SCR family is the unit shown in Fig. 6c.
The third general unit is the high-frequency or inverter type of SCR. While this device may generally be classified as a heavy industri~l type, it is uniquely characterized by its ability to turnoff rapidly. Figure 6d depicts a typical unit in this category. Note that high-frequency types differ from the heavy industrial units in their application; the former are the only SCRs used in inverters, choppers, cyclo-converters and other higher-frequency applications. Their frequency response is nearing the 50 kHz level; the upper limit for heavy industrial units is closer to 2.0 kHz.
Thus the case is made for the leading member of the thyristor family, the SCR. We now turn to
149

·
(a)

(b)

(c)

(d)
6. Thyristors may be classified according to application. Shown are light-industrial (a) and medium-industrial (b)' types, a high-frequency unit (c), and a heavy industrial type suitable for military use (d). Type (a) has low-current ratings (to 2 A rms), (b) medium current ratings (to 35 A rms), (d) highest current ratings (typically 235 A rms) and (c) the fastest turn-off time (10,us).

4 3

2

I

SYMBOL

©

2.,...__ _ _ __
CATHODE GATE

3 ANODE GATE
NPN

7. The SCS is a four-terminal device similar to the SCR. It is suitable for low-voltage and low-power applications (a). The equivalent circuit (b) shows the extra gate (terminal 3), which is sometimes used for preventing dv /dt effects from mistriggering the switch.

150

its relatives, the SCS, GTO, 4-layer diode, SBS and SUS, LASCR and Triac devices.

Spotlighting the rest of the thyristor family
The remaining thyristor devices are suited for a number of specialized, SCR-like applications (see Table 2). They have not as yet been made available in as wide a variety of package sizes or with as high a power-handling capability as the SCR.
The silicon-controlled switch (SCS), like the SCR, is a pnpn structure. However, it has four accessible leads (Fig. 7). The SCS is a device similar to two complementary transistors connected in a regenerative feedback arrangement. Therefore the normal parameters that cause beta to increase in a transistor, such as V aE, I a, V BE and temperature, will cause the SCS to unblock (as was the case with the SCR).
The main difference between the SCR and the SCS is that the latter is a four-terminal device used for low-voltage and low-power applications. The extra lead (anode gate) can be effectively used to prevent dv / dt triggering, by returning · this gate to the positive supply through a large resistance. The anode gate may also be used as a second gate trigger.
The transient response time of the SCS is dependent on the frequency response of the two transistors and the magnitude of the gate drive current. The larger the gate drive, the less the delay time with low anode currents, and thus the fastest response.
Recovery time, or turn-off time, is a function of diverting the npn base drive current in such a way that this transistor will turn off. This may be accomplished by providing a negative signal to the cathode gate or by placing a short between the anode and the anode gate. By reversebiasing the anode-cathode junction and tying the cathode gate to a negative polarity or ground, a fast recovery results.
One of the unique features of the SCS is its high triggering sensitivity. At moderate temperatures, where leakage is negligible, very large input resistances may be utilized to provide extremely sensitive triggering levels. Some of the more important parameters of a typical SCS (type 3N82) are:

A

+

1 GTO G6D

~ v

G

400

VOLTS

TIME

j J

25K

IK

0

©

8. The gate turn-off switch (GTO) is a pnpn device tailored to de switching application needs (a). It has a higher voltage rating than comparable bipolar transistors, as exemplified by this sawtooth generator application (b). Moreover, its trigger-power requirements are small.

ELECTRONIC DESIGN

· Anode to cathode (forward and 100 volts

reverse) voltage

(max)

· Continuous de forward current 200 mA (max)

· Total power

400 mW (max)

· Operating junction temperature - 65 °C-150 °C

· Holding current

1.5 mA (max)

· Cathode gate current to trigger 1 1J,A (max)

· Turn-on time

1.5 µ,s (max)

· Recovery time

15 µ,s (max)

The SCS may be used as a bistable device, such

as a Schmitt trigger; as a latching device, with

negative gate turn-off; like an SCR, with no dv / dt

problems, or as a signal SCR, with an extremely

fast recovery time.

GTO a natural for de switching
The gate turn-off switch (GTO) is a pnpn switching device with three terminals (Fig. 8). The GTO was designed primarily for de switching applications, where it has these advantages over the transistor: a higher voltage capability and a lower trigge.ring power requirement.
Like an SCR, it may be latched by a positive pulse between gate and cathode; unlike the SCR, it

may be unlatched by a negative pulse. A typical GTO is rated up to 400 volts in de forward-blocking voltage, and it has. a 25-volt (de) reversevoltage rating.. A series diode in the anode lead enables the device to tolerate high reverse voltages when needed. But since the GTO is largely used in de applications, the diode is a rare necessity. For fast turn-on and turn-off, the positive and negative gate pulses should have steep leading edges and slow decay times. These result in good turn-on and fast recovery times.
SUS and SBS have ·two states
The unilateral pnpn switching diode, commonly known as the Shockley (or four-layer) diode, is designed to block voltage until the breakover region is attained. The diodes may be obtained at various breakover voltages up to approximately 400 volts. Like the SCR, the switching level is dependent upon the build-up of the breakover current to the. threshold point of regeneration. The device then switches to a low saturation voltage level between anode and cathode. This results in a large voltage swing at the time of

Table 2. Other members of the Thyristor cast

Type

Major application areas

Characteristics

Si Iicon-control led switch (SCS) (see Fig. 7)

Sensitive voltage-level detectors. Binary and ring counters. Osc i 11 ators. Time-delay generators. Pu Ise generators. Relay drivers. Alarm systems.

A 4-terminal device. Used in low voltage (<250 V) and low power (< 1.0 w)
applications. High triggering sensitivity. Fast recovery time.

Gate turn-off switch (see Fig. 8)

High voltage fIip-flops. Ring counters. De converters. High-speed solenoid devices. High-frequency chopping.

A 3-terminal device. Used in de switching applications typified by higher voltages
than transistors and low trigger-power requirements.

4-layer diode (Shockley diode) unilateral switch;
Silicon bilateral switch (SBS) (see Fig. 9)

Thresholding control. SCR/ Triac phase control. Pulse sharpening. Voltage clipping.

Two regions: blocking and saturation. Forms part of UJT device. Rapid regeneration results in fast response time.

Light-activated SCR (LASCR)

Optical relay control. SCR triggering. Power switching. Alarm systems. Fiber optic programming. Slaved light-activation.

An SCR with a bui It-in infrared and visible light-sensing capability.
Rated to 200 volts at 440 mA de.

Triac (see Fig. 10)

Ac phase control. Synchronous .switching. Motor-speed control. Lamp dimmers. Automotive systems. Temperature control. EI ectr ic heating.

Equivalent to two, inverse-parallel connected SCRs. Immune to voltage transients. May be triggered by ac or de signals. Maximum peak one-cycle forward current rating is 80 A. Holding current is 50 mA de (at 25 ° C). Typical dv/ dt rating is 2 V/ µs .

May 17, 1966

151

switching, and since the regeneration is very

rapid, the response time is much faster than with

similar devices.

Another generation .of pnpn switches has suc-

ceeded the four-layer diode. These devices are the

silicon-unilateral switch (SUS) and the silicon-

bilateral switch (SES). They display excellent

leakage characteristics, a low breakover voltage

and a very good temperature coefficient of thresh-

old voltage. The threshold level is approximately

7 volts, with switchdown .to approximately 1 volt.

Other representative characteristics are as follows:

· Power level

350 mW (max)

· Forward current

200 mA

· Peak reverse voltage

30 volts (SUS)

· Operating temperature

- 65 ° C to 150 ° C

· Threshold voltage tempera- 0.05 %/° C (max)

ture coefficient

These devices show promise for applications

where accurate control of thresholding (triggering

level) under widely varying ambient temperatures

is needed. They are also useful in lower voltage

phase-control applications. Some units are avail-

able with a third lead for low voltage triggering and resetting, such as the UJT. The SES voltage~

current relationship is shown in Fig. 9.

Focus on LASCR for optical control
The light-activated SCR (LASCR) is another device in the thyristor family. It is a small SCR, typically mounted in a hermetically sealed T0-5 transistor case, with a glass window to permit triggering by means of light as well as by the normal gate signal. Typical devices are available up to 200 volts and are rated to 440 mA de.
These units were not developed to be highly accurate, threshold light-sensing devices, but they can be used in many applications where the sensing of infrared and visible light spectrums is needed. A typical unit (LR type) will trigger with an incident irradiation of 0.01 watts/ cm2 from a tungsten lamp producing 750 footcandles of illumination at the LASCR sensing surface.
The sensitivity of the device depends upon the external gate-to-cathode impedance, the junction temperature and ambient conditions. Moreover the anode voltage, anode current and frequency conditions also affect sensitivity.

Turn to the Triac for ac control
This recently developed thyristor provides lowcost control in many light-industrial applications. It is used when ac phase control and zero-voltage switching applications demand lower cost than can be provided with inverse-parallel SCRs. The Triac features bi-directional switching of load current with low power gate control (Fig. lOa). Unlike the SCR, the Triac cannot be damaged by voltage transients of either polarity, since excess
voltage or dvI dt causes it to conduct, with un-
wanted power being dissipated into the load. The Triac may ·be triggered by ac or de gate
signals, with bi-directional gate voltages for each
152

v

9. The silicon bilateral switch (SBS) is a pnpn symmetrical device exhibiting two regions; blocking (high V, low I) and saturation (low V, high I). These are bordered by the breakover limit (point of changing state).

ANODE 2
GATE~

ANODE I

DIAC OR SBS

l

SOLENOID R

120Vrms 60Hz
l

7

I

I

REED RELAY I

G

©
10. The Triac is the equivalent of two SCRs placed in an inverse-parallel configuration (a). In a simple phasecontrol application (b), the Triac is triggered by an SBS. As a solenoid driver (c), the Triac is easily controlled by a simple reed relay.

anode polarity. For example, when anode 2 is positive with respect to anode 1, the most sensitive triggering polarity is gate-positive with respect to anode 1. Note that a maximum gate current specification for a typical Triac is 50 mA. This is referred to as first-quadrant positive firing. With the same respective anode polarities, the identical Triac may be triggered with negative polarity on the gate, with a maximum specification of 75 mA. This firing mode is referred to as Quadrant I-.
Similarly, Quadrant III refers to the opposite anode polarities; III- being the most sensitive (maximum is 50 mA) and III+ being the least sensitive of the four cases, with no maximum gate current guaranteed. However, 75 mA in III+ will trigger the majority of Triacs. The greatest percentage of Triacs will trigger in Quadrant J+ and I- with gate currents between 5 and 25 mA. Selected units may also be obtained for guaranteed specific maximum triggering levels.
At present, typical Triacs may be obtained in two voltage levels, namely 200 and 400 volts, with 6 and 10 A rms forward ratings in each voltage group. For resistive loads, single Triacs can switch up to 2.4 kW on a 240-volt rms line. Triacs are capable of being slave-driven in both phasecontrol and zero-voltage switching circuits. Thus

ELECTRONIC DESIGN

large amounts of power may easily be controlled. The limiting point in power-handling capability is an economic factor that dictates a comparison between the cost of additional Triacs vs the cost of two high-current SCRs connected inverse-parallel (with their associated firing circuits).
The typical dv / dt capability fa 4 volts per mi-
crosecond under the conditions of maximum rated rms current, a case temperature of 75 °C, and a peak voltage of 200 applied at an exponential rate. Fig. lOb shows a Triac being triggered by a Diac (or SES) in a simple phase-control application. In this circuit the Triac is being fired in Quadrants I+ and III-. For each half cycle, the capacitor begins to charge up to the line voltage until the threshold of the trigger switch is reached. At this time the capacitor discharges through the gate circuit of the Triac, switching the Triac ON. It remains latched until the end of the half cycle, at which ·time the process repeats.
Let us now run through the step-by-step design procedure for a representative thyristor circuit. We choose the Triac device because it typifies ·a second-generation SCR.

Step-by-step design of solenoid driver

Let us assume we have a solenoid that will be energized with the contacts of a reed type switching relay. We will use a Triac in such a way
that the contacts of the reed switch open and close the gate circuit of the Triac, thereby directly
switching the solenoid ON and OFF. The parameters of the solenoid coil are L = O.l H
and· R = 1.0 n. Line voltage is 120 volts 60 Hz.
Since this is a problem of static switching we first draw the proposed circuit diagram (Fig. lOc).
A quick calculation for the full wave, steady
state value of inductive reactance is: XL = jwL = j27rf L = j 37.7 n. Since the coil R is
1.0 n, the circuit impedance (Z) is approximately j38 n. The rms current is

I=

120+j 0 j38

=

120 L 0° 38 L 90 °

= 3.15 L _ 90 o

A

(2)

Thus we find that therms current in the anode circuit lags the applied voltage by 90° . We also know that we may use a 200-volt, 6-A rms Triac with a reasonably small heat sink, since the ambient requirement is normal room temperature. The Triac will be triggered in the first quadrant positive (I+) and third quadrant negative (III-) and the maximum gate trigger current needed for either quadrant is 50 mA to insure reliable triggering of all Triacs used.
We select R to be 150 n. This insures that the peak gate current is less than the 3-A rating; that the gate power dissipation is not excessive, and that the gate load line provides high gate current for fast switching. To test our final design, we constrµct the circuit in the laboratory.
After switching on the circuit by energizing the reed switch, we find that we can't turn it off when the reed switch contacts are opened.
Could we have neglected the commutation dv / dt

May 17, 1966

Don't rule out high-power SCRs! This industrial SCR unit is water-cooled, operates directly from 480-volt distribution lines and can switch 1.5 MW loads. It blocks 1800 volts and can handle 1200 A rms.
of the Triac? The answer is yes. When the relay contacts are
turned off, the Triac will conduct until the load current becomes zero. At this time the line voltage is at a leading phase angle of approximately 90 ° and the solenoid coil voltage is zero such that the applied voltage is felt directly across terminals T1 - T2. Depending upon the distributed capacity of the solenoid, the rate of rise of this applied peak line voltage could very easily be greater than the dv/dt capability of the Triac (typical value= 2 volts/ ,us). A dv/dt suppression network may be required.
The circuit is retested with a new Triac and the
dvI dt is checked oscilloscope for the condition of
circuit turn-off. Several trials indicate that dv/dt is approximately 5 volts/ ,us and that the Triac remains ON, even though the gate switch is OFF. A suppression network of 0.1 ,uF in series with a
100 n resistor is placed in parallel with T 1 - T2
and the circuit performs satisfactorily for all Triacs tested. · ·
References: 1. General Electric SCR Manual, Third Edition 2. "Di/dt failures in SCR circuits-their cause and
prevention," By R. Weschler, ELECTRONIC DESIGN, Aug. 16, 1965, pp 140-145.
3. General Electric Transistor Manual, Seventh Edition
153

Hoffman provides semiconductors of inherent reliability completely compatible with the manufacturer's needs.
The Hoffman "N" series solar cell, an NIP, shallow diffused, photovoltaic device is optimized for operation in the spectrum of space. These eel Is are tested and qualified for radiation resistance in accordance with GSFC (NASA) Specification No. 63-106. An electrically conducting grid has been sintered to the active surface to reduce sheet resistance and thus increase conversion efficiency.
These physical characteristics are manufacturing tolerances for all Hoffman Semiconductor Solar Cell Types.
1. OHMIC CONTACT: (A) Electrically continuous and mechanically bonded. (B) Extends to .032 inches from the edge of the cell.
2. GRID LINES: Guaranteed to .100 inch tolerance. Hoffman's photo masking technique assures complete mechanical tolerances.
3. EDGE CHIPS: .010" wide, .100" long not to exceed one such chip per top and one per bottom edge of cell.
4. CORNER CHIPS: .030" on the hypotenuse of the chip.
5. WEIGHT: N120CG .18 Gr. Avg. N220CG .36 Gr. Avg. N210CG .18 Gr. Avg. N230CG .54 Gr. Avg.
Typical Electrical Specifications
2 x 2cm cell ...... .. .... ...... 430 mV@ 135 mA 1 x 2cm cell. ................. 430 mV@ 65 mA
Test Temperature: 28°C ± 2°c.
Hoffman solar cells are coated with silicon monoxide to render the active area anti-reflective to obtain maximum use of solar energy. These cells withstand temperature excursions from -196°C to +200°C.
STANDARD ENVIRONMENTAL TEST : Each lot of cells is immersed in boiling DI water for periods to one hour fol lowed by a live steam test for a comparable period.
All of these advantages insure complete compatibility of products for industrial uses .
....
Hoffman solid state photo-sensing devices are now being used for measuring, cloth cutting, sequence counting, liquid level gauging, data processing and other manufacturing functions requiring absolute accuracy.

TYPICAL INDUSTRIAL COMPATIBLE PRODUCTS: A shaft encoder is currently being produced to mechanical tolerances of ±.0005" and electrical parameters matched within 2%. Data processing readouts are being produced with an Id of 3 µA max.cat 1.5 volts reverse bias. Other sensing elements are being made with active areas as small as .002" x .023" and as large as 2.5" x 1.0".
For additional information regarding these products write: Hoffman Electronics, Dept. A, El Monte, Cal.if.

SEMICONDUCTORS

154

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ELECTRONIC DESIGN

/ 1fi~--- "" -----

/ \

·V - ,"'· i//1

~.-:. --

the full dimension ofMotorola semiconductors, with instant capability
SemiconJuctor ~Specialists INC.
5700 WEST NORTH AVENUE· CHICAGO, ILLINOIS· (312) NA 2-8860
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In choosing diodes, don't settle for second best. Nearly
all a·re optimized for a specific characteristic, so use this application guide to pick a winner every time.

Few engineers realize that each diode type, including general-purpose, has been tailored to meet the needs of a specific class of applications. This "application-fitness," achieved by V-I characteristic, electrical parameter control, package, or wafer construction, is the governing criterion for choosing the best diode for the job.
In line with this we have drafted a table of the major diode categories to help with selection.* It contains information on key application areas, critical design parameters and salient characteristics for the most popular diode types.
Although a diode may be used with some measur e of success in an application other than the one it has been optimized for, chances are that one or more of its parameters will be compromised and efficiency, life, or some other vital characteristic shortchanged. By contrasting the characteristics of different types, the table should give a clue to their suitability for any application.
To supplement this contrast and selection information, here is a breakdown of the maximum ratings and electrical characteristics common to nearly all diode types. This examination includes the definition and procedures used in calling out these diode parameters.
Maximum ratings
· VRM(wkuJ-Reverse voltage rating; the rated repetitive peak working voltage of a device is usually specified below the avalanche breakdown voltage to provide the safety factor required in the application for which it is designed. Higher voltage devices must sometimes be derated as a function of operating temperature due to forward and reverse power dissipation and increase leakage at elevated junction temperatures.
· I o-Average rectified forward current; this rating defines the current rating of diodes designed for use primarily in rectifying applicat ions. It is determined by the manufacturing process, wafer size, and package design, and is rated as a function of operating temperature.
· I FM-Peak forward current; this rating defines the recurrent peak forward current which
*This table is tailored to the "who-makes-what" chart in the diode section of this Directory (pp. 164). The table does not include thyristors, which are covered in a separate article (see p. 144).
Robert G. McKenna, Senior Engineer, Texas Instruments Inc., Semiconductor Division, Dallas, Tex.
156

may be seen by the diode. An example of a severe case is operation of the diode in a capacitive-input filter circuit. I FM is usually derated as a function of temperatures.
· I FM(surueJ-Surge current; this is the nonrepetitive current rating. It is usually specified as the current which a rectifier may be subjected to for a given number of times (usually 100) without failure, and as such, is a fault-condition rating. Some manufacturers provide a more conservative surge rating which is not limited to a given number of occurrences. That rating may be used to determine the safe inrush current in capacitivefilter type applications. It normally assumes that the device is allowed to return to thermal equilibrium prior to re-application of the surge.
· P-Power dissipation; the maximum power dissipation capabilities of the device under the conditions defined on the data sheet.
Electrical characteristics
· VBR-Reverse breakdown voltage; this is specified as a minimum characteristic of the diode, usually at a low leakage current and at a specific temperature.
· IR-Static reverse current; the reverse leakage current under specified reverse bias and temperature.
· VP-Static forward voltage; the forward voltage drop at a stated forward current and temperature. Usually measured with pulse techniques to overcome junction heating errors. · ·
~ F
-
Pinpointing diode parameters. Author McKenna works out the design of a diode circuit. He developed U1e applications-oriented guide to selecting diodes and rectifie.rs so as to save time and optimize circuit performance.
ELECTRONIC DESIGN

Applications - Oriented Parameter Study

Device type General purpose diodes
(Fig. 1)
Rectifiers (Fig.2)
Fast-recovery rectifiers

Major applications

Governing parameters

Key characteristics

Low-power rectification with capacitive inputs (voltage-doublers, triplers).
Low-power rectification with inductive inputs (L-fi lters, high-L transformers, magnetic amplifiers).
Clamping, decoupling, biasing ci rcuits, de relay networks.

IFM (surge) for inrush current. IFM for peak, recurrent operating current.
Peak transient reverse voltage rating.

Devices optimized for high-forward transconductance. Application typified by medium voltage levels (1- 600 volts).

Forward transconductance~

Power rectification (includes conventional rectification, high-voltage power supplies, photomultiplier tube biasing, radar and infrared systems).

Average forward current rating. Peak reverse voltage rating. Power dissipation. Surge current. Peak transient reverse voltage rating. Thermal resistance. Transient thermal impedance.

Devices are high-power diodes especia Ily packaged for rectifier service.
Units are optimized for high forwardconductance and minimum thermal impedance.

High-frequency converters, multiphase rectifiers and high-speed power switching.

Reverse recovery time. Reverse recovery current. Total device capacitance.

Typified by recovery times of the order of 100 ns.

1000.0

100.0
~

Iz -

w

aa::::

u:::>

10 .0

a0::
<( ~
a:: u0..

0 w

I-
<(

1.0

a::

u..
0

Iz w u aw::
ll.
0.1

L

J_

L

~ L

t tt

v lL 1 1
j_ l

r 1:

IL

I

2

7_

_f_ L 1

y L

v L
jJ

I
l

I-

I

±.L

±.L

J...

z 1l L1 T =150°C

L

IL

_l

lJ

--:f_ T = 25°C

=-65°C

J -

J -

J -

.L

.L

J...

-]}
-f
lL
j

-t t

.L

t

t_J_

~ J
1

I 0 0 .0 l===:t===:::t::===t:==::::t:====l====t=:==:t:::==:::t:::==:::t::==:j

lj =1so0 c - + - -if--:-:=----'""""'f'~ =--+---+---1
10.0 ~-+---+----+----+----I--+---+---+---+---~

I - - - + - - --- - --1-·- - 1 - - - t - - - - + - - - - + - - - + - - - + - - - + - - - - - 4

<(

::i..

I 1z -

I. 0 l====::f===:::t====+===+====l====t=:==:t:::==::t==:::t===~

w

a::

a::

:::>
u w
VI

-

a::

w

> w

a::

I

0 .01 0

0 .2

0.4

0 .6

0.8

1.0

0 . 001,__~_._~_._~_._~__..~~..._~.1..-~.1..-~....L....~.....L-~-'

0

20

40

60

80

100

VF - FORWARD VOLTAGE- (VOLTS)
1. Forward-biased diode characteristics for a generalpurpose type show how temperature affects the V-1 relationship (a). The reverse-biased characteristics demon-

©

PERCENT OF RATED VR-%

strate that junction temperature has a greater influence

on the reverse current than that due to the applied reverse

voltage (b).

·

May 17, 1966

157

OUTPUT

M------trr

__l _________ _

EXTRAPOLATE SLOPE AT POINT OF INFLECTION TO ZERO REFERENCE

2. Reverse recovery time is a critical parameter in rectifiers. Denoted by ·t rr· its measurement requires that a slope extrapolation be made.

120

100

80

60

Ui 40

~

0
>

20

w

(!)
<X

0

~

~ -20

w
8-40 z
<X
-60

-80

-100

-120

V(BF)-I - -~f ' ,

', ~
L ~

I'

VF(off )/

\

\

I\ ~
I\ \

} ~

I

IL-LATCH-IN CURRENT

IH-~~~~~~T

v
V(RM)_,...,...-

i..--1 V(GR)

-2.0

-1.0

0

1.0

2 .0

ANODE CURRENT (mAl

5. Current vs voltage relationship for a reverse-blocking diode thyristor shows how a blocking characteristic is

achieved in this device.

36.----.r -- - - - - . - - - - - - r - - - - . - - - - - - - - .

INPUT PORT

BIAS ISOLATION CAPACITORS

BIAS GROUND RETURN

ISOLATION CAPACITORS

~OUTPUT
-= PORT I

OUTPUT PORT2

BIAS PORT 2
3. RF diodes are often used to switch high-frequency signals (a). Plot of off-port isolation vs frequency (b) shows that the series resistance of the diode at 1 kHz

Iii
~301---------~----r----+----l----I
z
0 j:: <X ...I 0 en
....-241---------+-----+----=~---l""----l
a::
0 Cl.
I LL LL
0

25

50

75

100 125 150

FREQUENCY (mHz)
©

is within 15% of its value at 50 MHz. This magnitude
is usually less than 1.0 n. Note that VR refers to the
reverse voltage.

INPUT
INP~T VF 0

0 .05 µ.F 6 K.!l

DIODE

OUTPUT

irr

I

I

I

I

I

I

I

I

IRM ---j----J

I

I.--- tr r --.I

'*'· A critical parameter for computer and high-speed di-
odes is the reverse recovery time, t 1']' . Measured by the
158

test circuit (a), it is calculated from observations of the output-current waveform (b).
ELECTRONIC DESIGN

<t E
I ~
NOISE REGION

100
<t
!
_"-
50

REGION OF MATCHED CHARACTERISTICS

<t
::l
I ~
6. Noise diode characteristic shows the useful operating region (at the point of avalanche breakdown) for white noise generation.

0.2

0.4

0.6

0.8

1.0

VF (VOLTS}

7. Forward voltage drop is the criterion for establishing the region of matched characteristics for matched-diodes. Current level and temperature are the other key factors.

Applications - Oriented l"arameter Study (continued)

Device type

Major applications

Governing parameters

Key characteristics

RF diodes (Fig. 3) Computer and high-speed
diodes (Fig. 4)
Reverse-blocking diode thyristors and 4-layer diodes (Fig.5)
Noise diodes (Fig. 6)
Matched diodes (Fig. 7)
Microwave diodes (Fig. 8)

RF detection circuits. Small-signal, low-voltage diode applica-
tions.

Reverse recovery time.

Units have small-area junctions for minimum capacitance.

Diode gates, diode-capacitor storage, low-power diode switching and other "speed" applications.

Reverse-recovery ti me (<300 ns). Low junction-capacitance (<4pF at zero
volts).

Typified by reverse voltage ratings < 100 volts and forward voltage drops of 1 volt (approx.) at 10 - 50 mA. Note that forward transconductance, surge current ratings and reverse voltage ratings are relatively poor here.

Low-power circuits (bistable circuits, switching circuits, ring counters and SCR triggering).
High-power circuits (power switching, squib firing, pulse-forming, tone generators, proportional power control ).

Working blocking voltage. Anode breakover voHage. Average forward current. Peak recurrent forward current. Power rating. Conducting voltage drop. Holding current. Latching current. Allowable rate of dv/ dt.

Blocking characteristic exists until a breakover value is reached; then devices switch through a negativeresistance region into a low-impedance conducting state.

White noise generation. Random noise source in ECM jamming
equipment. Random function generator (vibration
table drives).

Available noise level. Bias voltage requirements.

White noise is generated at the point of avalanche breakdown.

Critical biasing circuits. Differential circuits. Logarithmic attenuators. Signal limiters.

Forward voltage drop.

Matched at several different current levels and (if required ) at various ternperatures.

Parametric amp Iifiers. Parametric limiters. Microwave sw itches. Phase -shifters. Harmonic generators. Sub-harmonic oscillators.

Total capacitance, Cr. Cutoff frequency, fco· Figure of merit, Q. Noise figure, NF. Package inductance. Power and voltage ratings.

Optimized for use at frequencies above 1 GHz.

May 17, 1966

159

4.0

1600

3 .5

1400

3 .0
~2 . 5 w ~ 2 .0 ~
~- 1.5
<l 1.0 u ~ 0 .5
0
-0 .5

CAPACITANCE

(

CURRENT

1200

T
J
I7
~
.J

1000 ~
<l
800 ~
600 aaIwz-:: 400 :u:::>
200 ..!...
0

-200

-1.0

-400

-1.5
-2 .o - 14 -12

-10

-8 -6 -4

-2

V-VOLTAGE (VOLTS)

-600
-800 0 +12

8. Junction capacitance, a key design parameter, and diode current are non-linear functions of voltage in the microwave diode.

70 f=IMHz

<l
_ E
....
Iv
10. The various operating regions and threshold levels of the tunnel diode are depicted in this forward currentforward voltage characteristic.

VR-VOLTS

.J

0 ~

2 0 ----+---+---->----<>----+-+--+-+-+---__._-__.._....._..........................................

I-

I

J"

I 0 .__---+---+--4---l-4-+--+-+-+---~--+-+--~~4-<1--1

o..__ __.__ _.___.__.__.........................__ __.__ __...._.L-..._.L....l....J....J'-'

0 .1

0 .3

I

3

10

VR - REVERSE VOLTAGE - (VOLTS)

9. In varactor diodes, the total capacitance CT is inversely related to reverse voltage VR. Two to five times the nominal capacitance is the range available.
Applications - Oriented Parameter Study (continued)

<l E
11. Symmetrical characteristics in varistors are obtained when two identical diode junctions are placed in an inverse-parallel configuration.

Device type

Major applications

Governing parameters

Key characteristics

Varactor diodes (includes variable reactance types) (Fig. 9)

Automatic frequency-control. Voltage-variable tuning circuits. Harmonic generation. FM modulators.

Tunnel diodes (Fig. 10)

Memory units. Logic circuits. Oscillators. Amp Iifiers.

Normal peak reverse voltage. Power dissipation. Total device capacitance, Cr. Capacitance ratio, Cy / Cy2. Figure of merit, Q.
Peak current, Ip· Valley current, ly. Current ratio, ly/ IP· Valley voltage, Vy. Delta voltage, Vv - Vp.

Optimized for their voltage - variable junction capacitance. Peak reversevoltage ratings range between 15 and 100 volts. Device capacitance is between 2 and 50 pF and capacitance ratio range is 2.0 to 5.0.
Provide a negative-resistance characteristic in the forward-b ias region below the stand-off voltage.

Vari stors (Fig. 11)
160

Signa l·Iimiters. Audio-clipper circuits. Noise and transient suppression. Meter protection.
-

Non-linear impedance vs voltage charac- Usually two diode junctions connected in

teristic.

an inverse-parallel configuratior·.

FOR THE ADAMS & WESTLAKE COMPANY INSERT, ON READER-SERVICE CARD CIRCLE 51 ~

BULLETIN AW66
high speed mercury wetted relays
THE ADAMS & WESTLAKE COMPANY · ELKHART, INDIANA 46514 · U.S.A. Phone: (219) CO 4-1141

NO. 2 WINDING / WHEN REQ 'D

-

+ SINGLE OR NO I

_

~WINDING

WIRING DIAGRAM BOTTOM VIEW

To prevent the accidental bridging of terminal pins with accumulated solder, solder steps or standoffs are used. When included in the relay design the front to back dimension (projection) is increased by 1/32". Note: This feature is optional and will be included upon request, at no increase in cost.

1.125

~ W/ O SOLDER STEPS ::E

· r

I
i

I ~o9o~

--k

00000

~ -·= soLOERSTEPS

RING DIAGRAM TTOM VIEW
SINGLE OR NO. I { WINDING
- - /+ +
NO. 2 WINDING WHEN REQ 'O
To prevent the accidental bridging of terminal pins with accumulated solder, solder steps or standoffs are used. When included in the relay design the front to back dimension (projection) is increased by 1/32". Note: This feature is optional and will be included upon request, at no increase in cost.

1.100
Ql .040 DIA.

I

+

i

.8
THE ADAMS & WESTLAKE COMPANY · ELKHART, INDIANA 46514 · U.S.A.

form /D/ neutral mercury wetted contact relays

ctJ.750
e
~ .040
DIA. PINS
I
I
t

T T

i /+~~.=~:~.:GI

-

/

WINDING

-

+

WIRING DIAGRAM

BOTTOM VIEW

Relay types AWNA and AWPB are identical in size and configuration. Each is a single switch-Form D-neutral (bridging) type relay, and is available with either single or dual wound coil. Relay type AWPB is polarized by means of permanent magnets and is available in Single-Side-Stable, Bistable or Chopper form.

1.100
Q1 .040 DIA. PINS
I
I
f
o o Io o

' ff ' THE ADAMS & WESTLAKE COMPANY · ELKHART, INDIANA 46514 · U.S.A.

high speed mercury wetted relays

magnetic interaction data

Magnetic interaction is described as the unauthorized operation or variation in characteristics of a relay adjacent to another relay, when either device is energized or is being removed from the equipment. The following dimensions must be observed to insure that interaction between relays is eliminated.

I

r-s1s

D D....

Q [l
_j lF/B

key

F/8 == Front to Back Clearance SIS == Side to Side Clearance 8/T == Bottom to Top Clearance

AWNA

0"

0"

1/4"

AWPB

O"

O"

3/a"

AWCA

0"

0"

1/4"

AWCL

0"

O"

1/4"

AWCS-26000

0"

0"

1/4"

AWNA-2600

0"

O"

1/4"

THE ADAMS & WESTLAKE COMPANY · ELKHART, INDIANA 46514 · U.S.A.

Litho in U .S.A. 20M - 4-66

3 .0

en 2 .0 a.. :::!:
_<I:
I....
1.0

Vz

VR -VOLTS

\ 45

30

15

~
1
7_

0 .5

1.0

1.5

VF -VOLTS

100

lzM

<I:

- +- j - r --- r --- ~ :

-------+----+----+-------1200-

WAVELENGTH (ANGSTROMS) 4000 5000 6000 7000 8000 9000 .10.000 11,000

12 0 t---+--+---+-+---+--+---t-+---+---+--t---+--+---t-+.---+---+------4

~ 100 t---+--+---+-+--+--+--i-+--+---+.-....1..-J-v -t~.......-..""'"1~ -+--+---+----i

~
~

v o8 1---+--+---+-+---+--+---t-+v_

~l,-1---+---I VO-.--+--+---+--+-----+-____.

~ 60 t----+--+---+-+----+--+~ ----+----+---+--t---+--+---tf--+-II.____..-----4

~
~

4 0

t----+--+---+y-+--"'"-~-+----+--+---t--+--+---+--+-----+---+-j--*--4------4

20 t---+--+-~ --+-+----+--+---t-+----+---+--t---+--+---tl--+----~--4------4

oo----0.-4---0-.5---0-.6---0-.7----0 .-8---0-.9---1-.0----I.I-I ---1.2

WAVELENGTH (- MICRONS)

1

300

,=-OR EQUAL VALUES OF RADIANT FLUX AT ALL WAVE LENGTHS

·

12. Normal operating region in a typical zener diode char-

acteristic is between lzK and lzM· The normal quiescent

bias point is at lzT·
3

120

~ 118 t---,\r - - + - - - - + - - - + - - - t - - - - - i l - - - - + - - - 1

"l. ~ ~ 116 t---~~-+----+---+---t-----il----+---1

i= w u ~ I 14 1-----+~~,.----+~--+----+-----+---+---~

z :::i

-.........__

I--- -- ~
~

~ ~ ~

I 12 110

t - - - t - - - t'..:-::::!lo""""'"==--t----t----+---+-----4
t---+---+---+--=""'l-o=:~ ::=-----i---+---1

§ ~ 108 r---+---+---+---t----it- --.:=.:..._..=---1

...... ......, 106 t-----,.----t---+---+----+---+--~

104 _ _ _ _ _ _ _ ____.__ __.__ __.__ _...___~

0

0 .5

1.5

2

2 .5

3

3 .5

2

Iii
"Cl

w 0

(/)
z

0a..
(/)

-I

w

~

OVEN POWER (WATTS)

-2

TT T TT TT

100 75 50 25 0 -25 -50

-3

TA -AMBIENT TEMPERATURE, STILL AIR ( °C)

~ N
~
~

T

T

75

50

I 0

~o

TA-AMBIENT TEMPERATURE ,CIRCULATING AIR (700-100 0 ft /min)-(°C)

13. Wide-range ambient - temperature excursions (~TA) have little influence on the junction temperature (TJ and oven power (W) in this compensated reference diode.

-4

20

60 100

1000

20,000

LIGHT MODULATION FREQUENCY (·Hz)

©

14. Photo diodes exhibit a variable response (impedance)

over a portion of the wavelength spectrum (a). Note, how-

ever, that their frequency response (b) is fairly flat.

Applications· Oriented Parameter Study (continued)

Device type

Major applications

Zener diodes (Fig. 12)

Reference elements. Shunt-voltage regulators. Voltage-reference elements. Biasing networks. Interstage coupling. Suppression circuits. Voltage clipping.

Low temperature-coefficient reference diodes (Fig. 13)

Voltage reference elements. Standard ce 11 replacements. Critical voltage regulators.

Photo diodes (Fig. 14)

Character recognition. Card/ tape readouts. Photoswitching. Proportional control systems. Difference amp Iifiers. Latching networks. Light-sensing. Photo-modulation.

Governing parameters

Key characteristics

Zener breakdown voltages, Vz.
Temperature-coefficient of zener voltage, !::.. Vzl !::.. TA·
Dynamic Zener impedance, Zz.
Power rating, p0.

Operate in avalanche-breakdown region. Voltage ranges between 3and 250 volts; power rating is from 150 mW to 50 W.

Zener voltage, Vz. Temperature coefficient, !::.. Vzl !::.. TA· Power requirements.
Light current, IL. Dark current, I0. Total capacitance, Cr. Rise time and fall time. Spectra I response.

Usually a series combination of selected low-vohage Zener di odes and forwardbiased diodes. Fixed bias current operation is recommended.
Output impedance is usually inversely proporti ona I to radiated Iight power levels.

May 17, 1966

161

One Good Single-Turn Calls for Another. Now Bourns Offers You Eight!

Whenever it's a question of single-turn precision potentiometers, you get more and better answers from Bourns. Here's the all-star lineup:

BUSHING MOUNT
Model 3530, Ya" Model 3430, 1Yi6"
Model 3410, 2" Model 3440, 3"

SERVO MOUNT
Model 3580, Ya" Model 3480, lYit
Model 3460, 2" Model 3490, 3"

In this complete single-turn line, the quality matches the

quantity. Exclusive SILVERWELD® multi-wire termination eliminates the chief cause of potentiometer failure. Construction insures humidity performance that meet·s the cycling requirements of MIL-R-12934. One hundred per cent inspection and the double-check follow-through of the Bourns Reliability Assurance Program are your final quality guarantees. Whatever you need in single-turns, you'll find the answer at Bourns - the complete source! Write for technical data on our entire line of bushing and servo models, KNOBPOT® potentiometers, and turns-counting dials.

#3530
Bourns' thin design lets you gang units in minimum depth; for example, Model 3580 allows 24 cup sections in less than 6 inches.

/ SILVERWELD and KNOBPOT are registered trademarks of Bourns, Inc.

OIVISION 1200 COLUMBIA AVE ·· RlVERSIOE, CALIF. PHONE 664·1700 ·TWX: 714·682 9!5B.2
CABLE: BOURNS1NC.

TRIMPOT® AND PRECISION POTENTIOMETERS - RELAYS - MICROCOMPONENTS: TRANSFORMERS. INDUCTORS. RESISTORS AND CAPACITORS ON READER-SERVICE CARD CIRCLE 52

Smaller and smaller and smaller parts ... tighter and tighter tolerances ... in larger and larger quantities ... this is the story of microceramics. Regular production includes substrates so tiny that a teaspoon holds more than 8,000 parts! Coors offers a complete facility for creating small, consistent, ceramic substrates-in several Coors Alumina and Beryllia ceramics, metallized or unmetallized. To assure economy, "as-fired" parts are produced in quantity, to extremely close tolerances (as shown at right). Let Coors provide the special help you need. Write for "Ceramic Substrate Design," Data Sheet No. 7002, or call your nearest Coors Regional Sales Manager: SouTHERN CALIFORNIA: R . E. Ousley, (213) 347-3060, Los Angeles, Calif. BAY AREA AND
NORTHWEST: W. Everitt, (408) 245-2595, Sunnyvale, Calif. MIDWEST: Tom Daly, (312) 529-2510, Chicago, Ill. CENTRAL: Don Lewis, (216) 228-1000, Cleveland, Ohio; EAST COAST: Robert F. Doran, (516) 427-9506, Huntington, N. Y .; H erbert W. Larisch, (215) 563-4487, Philadelphia, Pa.; NEW ENGLAND: Warren G. McDonald, (617) 222-9520, Attleboro, Mass. ; SOUTHWEST: William H. Ramsey, (713) 864-6369, Houston, Tex.; John West, (214) AD 1-4661, R ichardson, Tex.

ON READER-SERVICE CARD CIRCLE 53

CERAMICS
ALUMINAS · BERYLLIAS · MAGNESIAS · SPECIAL OXIDES
,... ____ 0 - - - - 1 .... : ... ,..._

1966 Diode Manufacturers' List
(According to Device Type)
To find the manufacturers of a specific type of diode, locate the device type in the columns on top. Dots are placed in the column to identify the manufacturers, listed at the left. To determine the diode product line of a specific manufacturer, locate the company name in the horizontal rows at the left. Dots are placed in that manufacturer's row under each type of diode device t.hat forms a part of his product line.

Manufacturer
Airtran Div., Litton Industries Alpha Industries Inc. American Electronics Labs. Inc. American Semiconductor Inc. Amperex Electronic Corp. Atlantic Semiconductor Inc. Bell, F. W., Inc. Bendix Semiconductor Div. Bradley Semiconductor Corp. Burroughs Corp. CBS Laboratories Chatham Electronics Computer Diode Corp. Conant Labs. Continental Device Corp. Crystalonics Inc. Delco Radio Div., Gen. Motors Delta Semiconductors Inc. Dickson Electronics Corp. Diodes Inc. Eastern Delta Corp. Eastron Corp. Eda I Industries Edgerton, Germeshausen & Grier Electro-Optical Systems Inc. Electronic Devices Inc. Erie Technological Products Fairchi Id Semiconductor Fansteel Metallurgical Corp. General Electric Co.

....

~

... "-~
;~;
' - .' f.lt

'f...!~!'

~
~

((. ~

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c.,q,

:if-

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~

;; ....~,

liq (Jo

~
((.0

~o·~

~
~
~li'

~

~~·~

.. "' ~
.l
,o ~~

~ 'jf ~o~

~ ~
,...~

::~

~,..~

~
~"'-;;.;..

~~ -~..;::":,

;~; l*l-·~l ~..

..
,...:~
cJ!iA:.
"'~~
c.," ,o 0

1-l ~~

~c.l ~

(J ;; : c., (Jo ~

Special Purpose

· · ·

·

· ·

N,P

·

· ·

N,R

·

· ·

·· ···

·

·

· ·

· D,F

·

B, H,St

Ha

· ·

· ·

·

·

·

· ·

·

· ·· ··

·

B

· · ·

· · ·

c

· · · · ·

· · ·

B, Se
·· ·

·

·

· ·

D

· · · ·

· · · ·

· ·

·

·

·

· ·

· ·

·

·

·

F B, D, H, St, S

· · ·

·

·

·

·

·

·

B,S,St C,St 8, Df,H, S

· R

· ·

· ·

·

·

· ·

·

· · · ·

· ·· ·

·
B, D, H, M, V
B
· A,E

· ·· ···

· ·

Se .
· · · · · · · La, p

164

ELECTRONIC DESIGN

Key to special purpose diodes category

A Arrays B Bridges, stacked, or special assemblies

N Pin diodes p Snap diodes

Bi Bilateral switch
c Multi-junction forward regulators cc Constant-current source

Ph Photo SCRs
R Radiation detectors
s Suppressors

..

D TV dampers
Of Specially diffused si Iicon diodes

Se Selenium rectifiers St Stabistors

E Light emitting diodes

Sym Symmetrical switch

F Controlled forward conductance diodes

T Thin-fi Im applications types

H High voltage elements Ha Ha 11 effect generators

Tr Trigger diode
u Multi-current reference

La Lasers

y

Relay diode

;

Manufacturer

General Instrument Corp. General Semiconductors Inc. Green Rectifier Corp. H PAssociates

· · · ·
· ·

Hel iotek Div. Textron Elec· tronics Inc.

Hoffman Electronics Corp.

· ·

Hughes Aircraft Co. Microelec· Ironies Div.

·

·

Hunt Electronics Co.

ITT Semiconductor

· ·

Instrument Systems Corp.

International Diode Corp.

·

International Electronics Corp.

·

·

International Rectifier Corp.

· ·

IR C Semiconductor

· ·

KMC Semiconductor Corp.

Korad Corp. Led ex MSI Electron ics Inc. Mallory Semiconductoc Co. MicroSemiconductor Corp. Microstate Electronics Corp.

· · · ·

Microwave Associates Inc.

Motorola Semiconductor Products

Inc.

·

National Electronics Corp. Nucleonic Products Co., Inc. Ohmite Mfg. Co. Philco Corp.

· · · ·

Power Components Inc.

· ·

May 17, 1966

· ·

·

·

·

·

· ·

· ·

·

·

·

·

· · ·

· ·

·

·

·

· ·

·

·

· ·

·

· ·

· · ·

..· · ·

·

· ·

·

· · ··

·· · · ·

· · · · · ·
·

·

·

·

· ··

·

·

· · · · · ·

·· · ·

· ·

. ·

·

.....

·

·· ·

· · · ·· ·
· · ·· ·
· ·

Special Purpose
·
B,C,H,U B, S, St · E,N,P,F
·
A Bi,Sym
Ha
·
B E, R La
B,Tr,St T E,N,X N, P, Df
CC,B,Tr
· B
· B,CC,La,N,P,Ph,R, Sym, T, U, Y St
165

Tarzian value-researched
Some research develops new products ... some research develops better· products ... some research develops better products at lower cost... '

Comprehensive design engineering data, including applications, test circuits, manufacturing methods and detailed electrical and mechanical specifications are available on Tarzian Semiconductors. This is just one phase of Tarzian value oriented service that includes application engineering assistance, MIL testing, quick quotations, fast sampling and competitive prices.

AVALANCHE SILICON RECTIFIERS
Avalanche characteristics standard at no extra cost. Low Current (1.0-1.6 amps DC, 100-800 PIV) Medium Current (2-12 amps DC, 100-600 PIV) High Current (25-350 amps DC, 100-600 PIV) High Voltage Cartridges (to 30,000 PIV, 50-250MA) Tube Replacement (over 25 types available)
Check 191 Reader Service Card
SILICON RECTIFIER ASSEMBLIES
(AVALANCHE)
Avalanche characteristics standard at no extra cost. 2.0-400 amp DC (50-600 PIV) single phase bridge 15-500 amp DC (50-600 PIV) three phase bridge
Check 192 Reader Service Card

ZENER VOLTAGE REGULATORS
0.25-50 watts, 5.6-200 volts-over 940 IN types in 5 voltage ratings and 8 series
Check 193 Reader Service Card
SELENIUM RECTIFIERS
20-320 volts, full wave, half wave, single phase, three phase, open, embedded, metal enclosed, and dozens of special types
Check 194 Reader Service Card
SILICON CONTROLLED RECTIFIERS
3-5 amps 100-600 volts
Check 195 Reader Service Card

STS 6612
166

~
iiil
ELECTRONIC DESIGN

semiconductors
TARZIAN CONDUCTS All THREE KINDS· AND HERE IS AN EXAMPLE OF THE LATEST·

l'· MTTF (HOURS)

.I '-·,

!

·, , CONVENTIONAL

r /

' ·,'- RECTIFIERS

I!11

........ '. ......'. :'-._

~~~~AN~HE

, ,~ ~ECTIFIERS

-- I
I

- - - - - - - ~ ' · ~-....-....__-_ >---E

- -- ---

---------- (VOLTS)

I
I
I ---- ----- ----- -----

----- ----- -------

(CURRENT)

MTTF (HOURS)

CONVENTIONAL RECTIFIERS

'·,·, /

I

·, I

--

·,, :
- '~ i
I - ~-

I TARZIAN I AVALANCHE
I / I RECTIFIERS

I ·, , 'i. - E

MTTF (HOURS)

CONVENTIONAL
\ ~IERS

\:

: ·\.~

" : ·~
I.
11,

'-.. °'ii"-...

I \.

I

TARZIAN AVALANCHE RECTIFIERS

TARZIAN

AVALANCHE RECTIFIERS WITH UP TO 125% GREATER
MEAN TIME TO FAILURE*

KLIPVOLT SURGE SUPPRESSORS
63-1020 max. clamping volts single phase nonpolarized; peak discharge current .2 to 180 amps. 22-272 max. d-c blocking volts single phase polarized; max. discharge current .25 to 430 amps. 85-600 max. clamping volts three phase, nonpolarized; peak discharge current 2.5 to 180 amps.
Check 196 Reader Service Card
The highly condensed listings shown here represent literally thousands of diffei:-ent types of semiconductor rectifiers. Complete listings of standard units are given in the technical publications covering each product group. Special types can be designed to meet your specifications. Contact your local Sarkes Tarzian sales representative or write directly to us for details.
IMMEDIATE DELIVERY
on most types is available through a nation wide network of Tarzian Industrial Electronic Distributors.
SARKES TARZIAN, INC.
SEMICONDUCTOR DIVISION· BLOOMINGTON, INDIANA World 's leading Manufacturers of TV and FM Tuners · Closed Circuit TV systems · Broadcast Equipment · Air Trimmers · FM Radios · Magnetic Recording Tape · Semiconductor Devices

A 2,000,000 unit hour test program recently completed by Tarzian shows statistically significant advantages for avalanche rectifiers and shows that . the derating-safety factor concept is not applicable to avalanche rectifiers.
TEST METHODS: Random samples were
tested on an automatic life tester which provided load conditions closely approximating usual field operation. Daily test results of peak inverse voltage and forward voltage drop were automatically recorded and accumulated. Current and voltage variant sub-samples were used to test efficacy of derating-safety factor procedures.
TEST CONCLUSIONS: Greater MTTF is
exhibited by Tarzian avalanche rectifiers than by standard types without avalanche characteristics. When moderate, long term overloads are applied (133 3 of rated current), avalanche rectifiers have a minimum improvement of MTTF of 125 3 . At rated current, avalanche rectifiers have as much as 123 3 improvement of MTTF, and a minimum of 63 improvement in MTTF. Derated 33 3 from rated current, avalanche rectifiers have a 203 improvement in MTTF over conventional rectifiers.
*with 95 3 confidence

May 17, 1966

ON READER-SERVICE CARD CIRCLE 54

167

Key to special purpose diodes category

~-

A Arrays

N

B Bridges, stacked, or special assemblies

p

Bi Bi lateral switch

Ph

c Multi-junction forward regulators

R

cc Constant-current source

s

D TV dampers

Se

Df Specially diffused si Iicon diodes

St

E Light emitting diodes

Sym

F Controlled forward conductance diodes

T

H High voltage elements

Tr

Ha Hal I effect generators

u

La Lasers

y

Pin diodes Snap diodes Photo SCRs Radiation detectors Suppressors Selenium rectifiers Stabistors Symmetrical switch Thin-fi Im applications types· Trigger diode Multi-current reference Relay diode

Manufacturer
Radiation, Inc. Radio Corp. of America Raytheon Co. Rectico Inc. Saratoga Semiconductor Div.,
Espey Mfg. Sarkes Tarzian Inc. Schauer Mfg. Corp. Semcor Div., Components Inc. Semicon Inc. Semiconductor Devices Inc. Semiconductor Specialists Inc. Semi-Elements Inc. Semtech Corp. Silicon Transistor Corp. Slater Electric Inc. Solar Systems Inc. Solid State Products Inc. Solitron Devices Inc. Sylvania Electric Products Syntron Co. TRW Semiconductors Texas Instruments Inc. Transitron Ele~tronic Corp. Trio Laboratories Inc. Unitrode Corp. Vactec Inc. Varian/ Bomac Div. Vara, Inc., Special Products Div. Western Semicooductor Inc. Westinghouse Electric Corp., Semiconductor Div.

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·

·

· ·

·

· · · ··

· · · ·

A
· B, La · E, N

· ·

·

·

· ·

·

·

· ·

·

· · ·

·

· · ·

· ·

·

·

·

· ·

·

· ·

· · ·

· ·

·

· · · · ·
· ·

B,H, Ph
H N,P
· E, La
B,H,St

Of

·· ·

· · ·

·

· · · Ph

· · ·

N

·· ··

· · ··· ·

·

N

·

·

B,H

·· ··

· · ·

· ·

St

· · ···

· ··· ··

· ·

· -I E, L,St

· · ··

· · ·

·

·· ··

u

·

cc

· ·

· ·

·

· ·

B,C,H,N,S

·

· · ·

N,P

·

·

H,B,D,Df

· ·

· ·· ·

·

···· ·

B

· ·

·

· ·

168

ELECTRONIC DESIGN

SILICON TRANSISTOR CORPORATION
(f) SILICON NPN AND PNP POWER TRANSISTORS (f)
Si Iicon Transistor Corp. m.akes more different si Iicon power transistors than any other manufacturer.

N.PN Types

NPN Types

Pd Watts Case 100°c BVeEo hFE Type Type Case Volts Min.

2N1016B 2N1016C 2Nl016D 2Nl483 2Nl484 2N1485 2Nl486 2N1487 2N1488 2N1489 2Nl490 2N1618 2Nl722 2N1724 2N1768 2N1769 2N2033 2N2034 2N2035 2N2036 2N2823 2N2824 2N2825 2N2828 2N2829 2N2858 2N2859 2N2911 2N3149
2N3150
2N3151
STC2500
STC2501

150W 150W 150W
T0-8 T0-8 T0-8 T0-8 T0-3 T0-3 T0-3 T0-3 T0-61 T0-53 T0-61 T0-75 T0-75 T0-5 T0-5 T0-8 T0-37 T0-63 T0-63 T0-63 T0-59 T0-59 T0-5 T0-5 T0-5
U{/' stud 1J{6" stud lJ{/' stud 11/4 " stud 11/4" stud

71 71 71 14.l 14.l 14.l 14.l 43 43 43 43 45 50 50 22.8 22.8
5.0 5.0 14.1 10 100 100 100 22.8 22.8 5.0 5.0 5.0 200
200
200
300
300

100 10 150 10 200 10 40 20 55 20 40 35 55 35 40 15 55 15 40 25 55 25
80 15 80 20 80 20 40 35 55 35 60 20 60 20 60 20 60 20 80 10 100 10 150 10 60 20 60 20 80 20 100 20 125 20 80 10
100 10
150 10
100 10
150 10

@ VeE(sat.) @ le Volts le Amps. Max. Amps.

5 2.5

5 2.5

5 2.5

0.75 2.0

0.75 2.0

0.75 0.75

0.75 0.75

1.5 3.0

1.5 3.0

1.5 1.0

1.5 1.0

2.0 2.0

2.0 1.0

2.0 1.0

0.75 0.75

0.75 0.75

0.5 0.8

1.0 0.3

1.5 0.45

2.0 1.0

20 1.1

20 1.1

20

1.1

0.5 0.4

1.0 0.3

1.0 0.3

1.0 0.3

1.0 0.3

50

1.5

5 5 5 0.75 0.75 0.75 0.75 1.5 1.5 1.5 1.5 2.0 2.0 2.0 0.75 0.75 0.5 1.0 1.5 2.0 20 20 20 0.5 1.0 1.0 1.0 1.0 50

50

1.5 50

50

1.5 50

100

1.5 100

100

1.5 100

Pd Watts
Case 100°c BVeEo hFE Type Type Case Volts Min.

2N3237 IND. 100 T0-3
2N3238 IND. 85 T0-3
2N3239 IND. 85 T0-3
2N3240 IND. 85 T0-3

75 12 80 8.5 80 8.5 160 8.5

@ VeE(sat.) @

le Volts

le

Amps. Max. Amps.

10

2.0

10

10

3.0

10

10

1.0 10

10

1.0 10

PNP Types

Type
2N2881 2N2882 2N3163 2N3164 2N3165 2N3166 2N3175 2N3176 2N3177 2N3178 2N3202 2N3203 2N3204 2N3205 2N3206 2N3207 2N3208

Pd
Watts Case 100°c BVeEO hFE Type Case Volts Min.

T0-5 T0-5 T0-61 T0-61 T0-61 T0-61 T0-61 T0-61 T0-61 T0-61 T0 -5 T0-5 T.0-5 T0-59 T0-59 T0-59 T0-5

5.0 60 20

5.0 100 20

45

40 12

45

60 12

45

80 12

45 100 12

45

40 10

45

60 10

45

80 10

45 100 10

5 40 20

5

60 20

5 80 20

22.8 40 20

22.8 60 20

22.8 100 20

5.0 40 20

@ VeE(sat.) @

le Volts

le

Amps. Max. Amps.

0.5 0.4

0.5

0.5 0.4

0.5

1.0 0.75 1.0

1.0 0.75 1.0

1.0 0.75 1.0

1.0 0.75 1.0

2.0 1.0

2.0

2.0 1.0

2.0

2.0 1.0

2.0

2.0 1.0

2.0

1.0 0.3

1.0

1.0 0.3

1.0

1.0 0.3

1.0

0.5 0.4

0.5

0.5 0.4

0.5

0.5 0.4

0.5

0.5 0.4

0.5

Write today for new, complete catalog.
SILICON TRANSISTOR CORPORATION
EAST GATE BOULEVARD, GARDEN CITY, N. Y. 11532, 516-742-4100
REGIONAL OFFICES: CHICAGO, ILL. 60625, 5555 NORTH LINCOLN AVE., 312-271-0366-7, TWX 910-221 -1304 / LOS ALTOS, CALIF. 94022, 1 FIRST ST., 415-941-2842

May 17, 1966

169

Choosing ICs need not be a chore. use
this directory of available circuits to eliminate
those hours spent searching in vain.

As the number of available microelectronic circuits, and in particular integrated circuits (ICs), becomes greater and greater, the task of selecting the best circuit for a given application becomes correspondingly more difficult and timeconsuming. By listing the available integrated circuits by major logic categories and a 'key parameter; ELECTRONIC DESIGN'S Microelectronic Data Charts will save you many hours of needless searching.
Data charts make selection easier
These data charts provide a method of comparing available standard devices within the limitation of manufacturers' available data. For convenience, the charts are separated into the following categories:
· Section 1-Diode Transistor Logic (DTL). · Section 2-Direct-Coupled Transistor Logic
(DCTL) and Resistor-Transistor Logic (RTL). · Section 3-Transistor-Transistor Logic (TTL). · Section 4-Emitter-Coupled Logic (ECL). · Section 5-Resistor-Capacitor Transistor Logic (RCTL). · Section 6~Complementary Transistor Logic (CTL). · Section 7-Miscellaneous Digital Circuits · Section 8-Linear Circuits The attached table gives a fast run-down of the major parameters associated with digital circuits. As an example of circuit designs, a two-input NOR gate circuit is shown for each of the logic types. The parameter values given are based on typical values and serve only as a guide. To further aid your search, the first three sections of the directory, because of their extreme length, also contain a dot chart listing of logic circuits and the names of the manufacturers m~k ing them. The data charts are each divided into circuit sub-categories with headings such as Gates, Binary Elements, and Expanders for the digital circuits and Operational Amplifiers, Comparators, and Voltage Regulators for the linear circuits.
Rene Colen, Microelectronics Editor
170

The listings are again divided up, especially for the gate circuits, into AND, NAND, NOR, etc., subgroups. Within any group or subgroup, the listings are in order of increasing propagation delays.
As is .often the case, a particular model number may be known and it is the data listing that has to be found. The Cross-Reference Index, following Section Eight, provides a fast method for locating this information. The first column of the index lists all of the model numbers in an alpha-numerical sequence. The second column consists of a two or three digit listing which calls out the section, category and subgroup where the device is located. On the charts, these cross-references are listed in the first two columns. For example, suppose you wished to locate a device whose model number you know to be MC1114. The cross-reference listing is lEl. In the first section (DTL), you would scan down the first column until you came to E (Gates). You then scan down the second column until you come to 1 (AND). The device will be listed in this grouping.
The charts are only a guide to the most useful circuits for a particular application. Though they will help to bring some order to the immense problem of selecting and purchasing integrated circuits, a thorough check of manufacturers' data sheets is imperative.
Understanding the specs is a must
Before analyzing the data listings, an understanding of what the various parameters mean is helpful. Manufacturers use various test methods, and though their reasons for doing so are usually meaningful, the design engineer should be aware of these different methods and understand their meaning in relation to his particular application.
Propagation delay, loosely defined as the time required to transfer a pulse through the integrateq circuit device, is one of the most important measures of circuit performance. Since different methods of testing this parameter exist, manufacturers' data sheets must include both a description of the test circuit and a full definition of the waveforms measured. In addition, data sheets should spell out switching times as well, and some indication should be made of variations in these
ELECTRONIC DESIGN

Typical IC characteristics and circuits

Symbol

Circuit diagram
+V

DCTL

Speed*

Power* Fan-out*

Noise immunity*

Remarks

Medium

Medium

Low

Variations in input characteristics result in

base-current "hogging" problem. Proper

Low

operation not always guaranteed. More sus-

ceptible to noise because of low operating

and signal vol tages.

·
RTL

+V

Low

Low

Low

Very similar to DCTL. Resistors resolve

Low

current "hogging" problem and reduce power

dissipation. However, operating speed is

affected and aIsa reduced.

RCTL

Low

Low

Low

Though capacitors can increase speed capa-

Low

bility , noise immunity is affected by capaci-

tive coupling of noise signals.

DTL
+V
TTL
CML

Medium

Medium Medium

Medium to
High

Use of pull -up resistor and charge-control technique improves speed capabilities. Many modifications of this circuit exist, each having specific advantages.

Medium

Medium Medium

Medium to High

Very similar to DTL. Has lower parasitic capacity at inputs. With the many existing variations, this is becoming very popular.

Similar to a differential amplifier, the refer-

Medium

ence voltage sets the threshold voltage.

High

High

High

to

High-speed , high fan-out operation is possi-

High

ble with associated high power dissipation.

Al so known as emitter-coupled logic (ECL).

CTL
May 17, 1966

More difficult manufacturing process results

High

High

Medium

Medium

in compromises of active device characteris-

tics and higher cost.

-v
* Legend Low = Medium = High =

<5 MHz

<5 mW

5 to 15 MHz 5 to 15 mW

>15 MHz > 15 mW

<5 5 to 10 > 10

<300 mV 300 to 500 mV
>500 mV

171

4-TRACKand 8-TRACK HEADS

measurements as a function of loading (fan-out) and temperature.
Fan-in -refers to the number of inputs that the device takes. A carry-over from older times, this rating, where given, many provide additional information to that given in the "Type" column in the data charts.

for stereo tape

Fan-out is the measure of a circuit's capability to drive a specified number of the same circuit from its output. Though both typical and maxi-

cartridge players!

mum values may be listed, only the latter value can realistically be used in making comparisons.
Power dissipation may be given per node, gate, stage, circuit, or package; or it may be given

without any qualifications. Any reasonable com-

parison of this rating is greatly complicated by

this lack of a standard. In the data charts, a slash

following a power rating indicates a per-gate value, if in the gates section, and a per-stage

,,

value, if in the binary elements section. Note that the power dissipation is a function of the supply voltage and that it varies directly with operating speed; in looking at manufacturer's data sheets,

check that all the test data are taken under the same operating conditions.

Noise margin or noise immunity indicates the

minimum amount of noise voltage that will cause

an "error" in the output of a logic circuit. Normally, noise immunity for a "O" logic state is defined as the difference between the minimum "0" input

threshold and the :r;naximum "O" output signal.

For a "1" logic state, it is the difference between the minimum output signal and the maximum "l"

input threshhold. With logic errors possible in either of two available states, the noise immunity

O-Z.Cf&jOft'-1.G.(i)~ pioneered their development for in-car and home cartridge players I

rating should be checked for both logical "O" and "l" conditions. Also, since supply voltage and loading conditions affect this circuit characteristic, only the worst-case measurement should be used.
Temperature ratings are for a -55°C to
+ 125 °C range unless otherwise noted.

If you're designing a cartridge tape recorder or playback unit-take a good look at Nortronics' B2Q and B2L heads! These two popular 4-Track and 8-Track stereo heads lead the industry in acceptance, and offer:
·Outstanding shielding against external magnetic fields.
·Optimum high frequency resolution. Precision deposited quartz gaps, available from 50 to 500 micro-inches.
· Hyperbolic, highly polished, all-metal faces for intimate tape-to-gap contact and reduced oxide build up.
B2L: 8-Track Stereo Head; 20-mil tracks spaced 127-mils on centers. B2Q: 4-Track Stereo; 43-mil tracks spaced 136-mils on centers.

Package types for integrated circuits basically fall into three categories : the flat-pack, the tenlead T0-5, and the dual-in-line packages. Though a number of manufacturers have registered their particular package designs with the JEDEC Semiconductor Device Council (JEDEC Publication 12E) there are still no standards set in the industry. The data charts in this directory use a letter code for the various packages, as follows :
· A= T0-5
· B = T0-47

~

For any tape head require-

ment, consult Nortronics

,... LfL,... .· : -· ... world's leading and
)J~ most respected man-

;-t-( ~

ufacturer of precision-

TiJtAL · quality n:iagnetic tape heads!

· C = 1/4 in. sq. flat-pack (T0-86, T0-91)
· D = 1/4 x 1/ 8 in. flat-pack (T0-84, T0-85, T0-89, T0-90)
· E = 3/ 8 in. sq. flat-pack
· F = 1/4 x 3/8 in. flat-pack (T0-87, T0-88, T0-95)
· G = Special package (T0-69, T0-70, T0-71, T0-73 through T0-80, T0-96, T0-97, T0-99, T0-100, T0-101)

_ ,...8.1.8.5-.C..10.th..A.ve...N.o.. .·..M.in.n.e.ap.o.li.s,.M.i.n.ne.s.o.ta.5.5.4.27...

The numbers in parentheses refer to the JEDEC
registered devices and are listed by their approximate size and style. · ·

ON READER-SERVICE CARD CIRCLE 89

172

ELECTRONIC DESIGN

4 NEW LINEAR-ECONOMY-LINE RCA INTEGRATED CIRCUITS
Exceptionally high amplifier gain · Voltage Gain:
67 dB typical @ 4.5 MHz · Power Gain:
75 dB typical @ 4.5 MHz · Exceptional limiting
characteristics · Input Limiting Voltage (knee):
300 µ,v@ 4.5 MHz typical In T0-5 style package.
Excellent AM rejection e>50 dB @ 4.5 MHz Four functions on a monolithic chip; · IF Amplifier · AM and Noise Limiter · f M Detector · Audio Preamplifier

NEW ECONOMY AND PERFORMANCE .FOR TV/FM/ INSTRUMENTATION FROM 100 KHz TO> 20 MHz
Now four new RCA linear types make integrated circuits a working reality for a broad spectrum of communications and instrumentation applications. Here are all the economy, performance, and reliability advantages you've been waiting for, in practical, lowcost linear circuits.
Included in this new RCA linear-economy-line, are:
CA3011 Wideband Amplifier-up to 7.5v supply*
CA3012 Wideband Amplifier-up to lOv supply*
CA3013 Wideband Amplifier-Discriminator-up to 7.5v supply'~
CA3014 Wideband Amplifier-Discriminator-up to lOv supply* '' suggested maximum Vee
All four circuits are available now for your design and evaluation requirements. For price and delivery information, call your RCA Field Representative today. For technical data, write Commercial Engineering, Section IC-G-5-3, RCA Electronic Components and Devices, Harrison, N. J. 07029.
tCA3011 $2.00 (single-unit price)

COMING! Thorough Grounding
in Theory and Applications for the
DESIGNER WHO NEEDS TO KNOW!

Type

CHECK RCA'S VERSATILE LINEAR LINE FOR:

CA3000 CA3001

CA3002

CA3004 CA3005 CA3006

CA3007

Function VIDEO AMPL. DC AMPL.

IF AMPL.

RF AMPLS.

AF AMPL.

Gain dB
-3dB Bandwidth

37 @ 1 KHz
650KHz

19

24.4

@ 1 MHz @ 1.75 MHz

16MHz

11 MHz

12-16 @ lOOMHz
lOOMHz

22 @l KHz
20KHz

CA3008 CA3010
OPERATIONAL AMPLS. 60
@ 1 KHz
300KHz

Available through your RCA distributor

The Most Trusted Name in Electronics

ON READER-SERVIC6 CARD CIRCLE . 82

1. Diode-Transistor Logic

Logic Function

Type

Model

P<0pog··l

Logic Levels

ti on Delay

· Fan-in

Fan-out

Power Supply Diss. Voltage

(Volts)

Noise Margin

Mfr~ (ns) Typ. Max. Typ. Max. {mW) (Volts) "O" "l" (mV)

2
Temp Range (oC)

Package Type

3
Remarks

Adders A
Binary Elements B

Half

A51

SI 35

- - - 5 40 5

1.1 2.7 700 0 to 70 A, D

Half

UC1Q048 SPR 40

- - - 5 130 6,-3 0.4 5.8 500 -

-

R-S Flip Flop RD-208 RAD 7

- - - 7 20 5

.250 4.5 800 -

D

R-S Flip Flop RD-308 RAu 7

- 4 - 4 20 5

0.25 5 800 -

D

Expandable

R-S Flip Flop -
-
-

RD-508 RAD 7 NC/PCB GI 8
NC/ PC12 GI 8
PC-13 GI 8

- 4 - 7 20 5

0.25 5 800 0+75

- - - 5 200 12, 4.2 0 5 -

-

- 1 - 22 - 12, 4.2 0 5 -

-

- - - 5 200 12, 4.2 0 5 -

-

D

Expandable

A, E MC 'lRCDT

A, E

E

MC RCDT

-
Counter Flip-Flop R-S Flip-Flop

8200

VAR 10

UC1002B SPR 14

MC282G MO 18

DTµL950 FA 20

- - 2 . 4 100 6, 3 0.5 3.5 -

-

- - - 5 65 6,-3 0.4 5.8 500 -

- - - - 7.5 -

- - 550 -

- 2 - 12 40 5.0 0. 2 5 600 -

-

TF

-

A

A, C

-
-
J-K Flip Flop J-K Flip Flop

ND1003 RD-207 RD-307 RD-507

NA 20 RAD 20
RAD 20
RAD 20

- 2 - 4 20 6

0.2 4.0 750 -

-

- - - 12 95 5 - - - 8 95 5 - - - 12 95 5

0.25 3 0.25 3

800 800

--

0.25 3 800 0+75

D D D

R·S

SW201 SW 20

- - - 10 7 6

0.35 2.0 550 -

A, C, D

R-S

SW212 SW 20

- - - 10 7 6

0.35 2.0 550 -

A, D And Expand.

-

WM202 WH 23

3 3 - 10 15 6

0.35 2.0 550 -

A, C, D

-

WM212 WH 23

3 3 - 10 15 6

0.35 2.0 550 -

A, D

R-S

RC202T RA 32

- - 10 - 9.5 6

- - 550 -

A, D

R-S

RC212T RA 32

- - 10 - 9.5 6

- - 550 -

A, D

Shift Reg.

A09

SI 32(0 to 1) - - - 5 54 5

1.0 2.7 900 -

A, D

52(1 to 0)

Shift- Reg

A49

SI 32( 0-1) - - - 5 54 5

1.1 2.7 700 0to 70 A, D

52( 1-0)

R-S, J·K

DTµL9 48 FA 40

- 2 - 12 45 5.0 0.2 5 600 0 to 75 A, C

I Clocked R-S, J-K MC831

CRl·So~kJe-Kd R-S,J-K

MC848 MC931

MO 40 MO 40
MO 40

- - - 7 20 5 - - - 11 45 5
- - - 7 20 5

R-S , J-K

MC948 MO 40

- - - 9 45 5

Shift Reg.

A03

SI 40(0 to 1) - - - 5 40 5

0.2 5 500 0.2 5 500
0.2 5 500 0.2 5 500 1.0 2.7 900

0to 75 0 to 75
--
-

A, C
A, C A, C A, C A, D

Modified DTL Modified DTL Modified DTL Modified DTL

I Sh;ft Reg

60(1 to 0)

A43

SI 40( 0-1) - - - 5 40 5

1.1 2.7 700 Oto 70 A, D

60( 1-0)

R-S J-K

$1948 SI 40

- 2 - 12 45 5

0.2 5.0 600 -25 to+l25 D

R-S J-K

Sl948D SI 40

- 2 - 12 45 5

0.2 5.0 600 0to 75

D

RS/ JK

SW931 SW 40

- - 8 10 20 4 to 6 0.3 3.0 1000 -

A

R-SJ-K Clocked SW948 SW 40

2 - 8 - 48 4-6 0.4 2.6 1000 -

-

J-K/ R-S

SN15848 Tl 45

- - - 9 35 4.5-5.5 - - 750 0- 75

D,

Pulse Triggered SN15850 Tl 45

- - - 8 - 4.5 -5.5 - - 750 0-75

D,

J-K/ R-S

SN15948 Tl 45

- - - 9 35 4.5-5.5 - - 750 -

D

Pulse Triggered SN15950 Tl 45

- - - 8 - 4.5- 5.5 - - 750 -

D

Clocked JK-RS DT11L931 FA 50

- 2 - 7 20 5

- 5 500 -

A, C

R-S , J-K

DT11L945 FA 50

- 2 - 9 35 5. 0 0.2 5 600 -

A, C

-

MC209 MO 50

- - - 8 16 8, -8 0.6 2.0 500 -

A, C

R-S, J-K

MC845 MO 50

- - - 12 35 5

0.2 5 500 0to 75 A, C Modified DTL

R-S , J-K J-K
Clocked J-K R-S Clocked J-K R-S

MC945 PL931 Sl931 Sl931D

MO 50 PH 50 SI 50 SI 50

- - - 10 35 5

0. 2 5 500 -

- - - 7 20 3·6 0.2 4.0 500 -

A, C Modified DTL
c

- 2 - 7 20 5

- 0.2 5 500

D

- 2 - 7 20 5

0.2 5 500 0to 75 D

R-S J-K R-S J-K

Sl945 SI 50 Sl945D SI 50

- 2 - 9 35 5
- 2 - 9 35 5

0.2 5 600 0.2 5 600

-25 to+l25 D 0 to 75 D

R-S J-K Clocked SW945 SW 50

J-K / R-S

SN15831 Tl 50

2 - 9 - 42 4-6 0.4 2.6 1000 -

-

- - - 7 20 4. 5-5.5 - - 750 0. 75

D,

J-K/ R-S

SN15931 Tl 50

- - - 7 20 4.5-5.5 - - 750 -

D

J- K/ R-S

SN15945 Tl 50

- - - 10 30 4.5-5.5 - - 750 -

D

J-K

SE125 SIG 55

- - - 8 40 +4 0.4 3.9 1000 -

F

Clocked R-S -

MC259 MO 60 MC260 MO 60

- - - 8 16 4 - - - 8 16 4

4 .3 500 0to 75 A, C 4 .3 500 0to 75 A, C

Single

CS704 SIG 60

- - - 7 20 +4-2 0.4 3.9 1000 -

A, C

Sing le

CS729 SIG 60

- - - 7 30 +4 0.4 3.9 1000 -

F

Single

SE.124 SIG 60

- - - 8 16 +4, - 2 0.4 3.9 1000 -

A, C, F

Single Phase J · K SN530 Tl 60

- - - 10 27 3-4 - - 300 -

D

Modified DTL

J-K

SN5301 Tl 60

- - - 10 27 3. 4 - - 300 -

D

Preset &

Clear

Dual J-K . Dua I J- K

SN5302 Tl 60 SN5304 Tl 60

-

-
-

-

3-4 1100 1 '277I 3-4

-

-
-

300 300

-

D

Preset

D

Preset &

ff

Clear

1) See pages 4-9 for manufacturer's name. 2) -55 ° to +125 ° C unless otherwise indicated. 3) MC = Multiple Chip; TF = Thin-film hybrid.

174

ELECTRONIC DESIGN

DTL (continued)

Logic Function

Type

Model

Logic

Propogo· ti on Deloy

Fan-in

Levels

Fan-out

Power Supply Diss. Voltage

(Volts)

Noise Margin

Mfr~ {ns) Typ. Mox. Typ. Max. (mW) (Volts) "O" "1" {mV)

2
Temp
Range (oC)

Package Type

3
Remark~

8

J-K

SN7301 Tl 60

- - - 10 27 3-4 - - -

0-70

D

Preset and

J-K Dual J-K Dual J-K

SN7300 Tl 60

- - - 10 27 3-4 - - 300 0-70

D

SN7302 Tl 60

- - - 10 27/ ff 3-4 - - -

0-7G

D

SN7304 Tl 60

- - - 10 27/ ff 3-4 - - -

0-70

D

Clear Preset Preset Preset and

Clear

-

RC203T RA t5MHz - - 4 - 75 6

- - 550 -

A. D tclock rate

J-K

WM215 WH t5MHz - - - 9 45 6.0 0.35 2.0 550 0 to 125 A, C, D t fT

Counter JK

WM203 WH t5MHz - - - 4 84 6

- RC215T RA t5MHz

- 9 - 56 6

0.35 2.0 550 -
- - 550 -

A, C tic

A, D

tclock rate

Pulse

RC213T RA tllMHz - - 8 - 40 6

---

-

A, D tclock rate

..

-

WM213 WH t12MHz - - - 9 35 6

0.35 2.0 550 -

A, C, D t it

J-K -

WM503 WH t20MHz - - 10 - 47 4.5 0.40 1.8 500 -

NC/ PC19 GI -

- - - 5 200 12, 4.2 0 5 -

-

D

t tt

A, E RCT

J -K

WM225G WH -

- - - 10 55 6

2 1 550 -

D

Converters
c

A to D D to A

WS815 WH -
WS150 WH -

- - - 5 60 20, 4.0 0.45 1.75 250 0 to 125 c - - - - 100 10, 6.4 0.45 1.75 250 0 to 125 c

Drivers / Buffers D
:
I

Dua I 4- input Dual 4-input Dual 4-input 3-input Dual Dual Dual 8- input Dua I 4-input Dua I 4-i nput Dua I 4-i nput Dual 4-input 4-input 4-input Dual Dual Dual 4-input Dua I 4-input Dual 4- input
Dual 4- input
Quad Inverter/ Driver Quad Dual
Dual Single Dual Dual Dual Dual input Dual output
Dual Dual

RD-209 RAD 7

RD-309 RAD 7

RD-509 RAD 7

UC1003B SPR 14

8213

VAR 15

WM510 WH 15

SE155 SIG 16

SE156 SIG 18

WM234G WH 19

DTµL932 FA 20

MC832 MO 20

MC932 MO 20

PL932 PH 20

Sl932 SI 20

Sl932D SI 20

CS715 SIG 20

SE157 SIG 20

SW932 SW 25

SW944 SW 25

SN5832 Tl 25

SN 15932 Tl 25

SN535 Tl 30

SN7350 Tl 30 RC210T RA 32 RC210Q
RC210G
ND1002 NA 35 WM210 WH 37 SE750 SIG 40
WS817 WH so
WS817Q WH 50 MC205 MO 55
MC255 MO 55 WS816 WH 80 SN343A Tl 500 SN346A Tl 850

A20

SI -

AGO

SI -

- 4 - 12 22 5 - 4 - 8 22 5

0.25

800 -

0.25 3 800 -

- 4 - 12 22 5

0.25 3 800 0+75

- 15 - 15 55 6,-3 0.4 5.8 500 -

- - - 10 - 6, 3, -3 0.5 ' 3.5 -

-

5 5 27 - 20 4.5 0.40 1.8 500 -

- 4 - 19 30 +4 0.4 3.9 1000 -

- 4 - 19 30 +41 0.4 3.9 1000 -

- - - 16 20 6

2 1 550 -

- 4 - 25 30 5

0.2 5 750 -

- - - 25 30 5 - - - 25 30 5

0.2 5 500 0to 75
0.2 5 500 -

- - - 25 90 3-6
- 4 - 25 30 5 - 4 - 25 30 5

0.2 4.0 500 0.2 5 750 0.2 5 750

-
-
0 to 75

- 2 - 19 30 +4-2 0.4 3.9 1000 -

- 3 - 19 30 +4, -2 0.4 3.9 1000 -

100 - 25 - 25 4-6 0.4 2.6 1000 -

100 - 27 - 20 4-6 0.4 2.6 1000 -

- - - 20 15/ 4.5-5.5 - - 750 0- 75

gate

- - - 20 15/ 4.5-5.5 - - 750 -

gate

- - - 10 9/ 3-4 - - 300 -

gate

- - - 10 9/i nv 3-4 - - -

0-70

- - 11 - 9.5/ 6

- - 550 -

gate

D D D
-
D F F D A, C A, C
cA, C
D D A A -
-
D
D
D
D, J A, D

Expandable Expandable Expandable TF
Expandable Modified DTL Modified DTL
Expandable Expandable
Modified DTL

- 2 20 - 20 6

0.2 4.0 750 -

-

3 3 - 22 60 6

0.35 2.0 550 -

A, C, D

- 2 - 20 36 +4,-2 0.4 3-9 1000 -

A, C

- 3 25 - 20 4.0 0.45 1.75 250 0 to 125 c

- - - 25 15 4.0 0.7 1.75 250 0-125 c

2 - - 20 50 6, -6 0.6 2.5 300 -

A, C 1000 ohm Load

- - - 2p 50 4

---

0 to 75 A, C

- 3 10 - 60 4.0 0.45 1.75 250 0 to 125 c

-

-
-

-

- 13 25 24, 6-3 - -

11 160 -

-

500 500

0 to 65 0 to 65

D D

Minuteman Minuteman

Type

- 4- - 75

1.0 2.7 -

-

A, D

- 4- - 75

1.1 2.7 700 0 to 70 A, D

Got es E

AND 1

-
-
-
3-4 input -
8-Diode Dua I 3-i nput 6-input Dua I 3-i nput Dual

MC203 8207 8208 8209 8210 MCllll MC111 2 MClll3 MC1114 MC215 MC253 MC265 CS705

MO 4 VAR 10 VAR 10 VAR 10 VAR 10 MO 15 MO 15 MO 15 MO 15
MO MO MO -
SIG -

6 - - - 100 6, 8 0.6 2.0 500 -

A, C

- - 6 10 - 6

---

-

-

T F, Expand.

- - 6 10 - 6

---

-

-

TF, Expand.

- - 6 10 - 6

-- -

-

-

T F, Expand.

- - 6 10 - 6

-- -

-

-

T F, Expand.

3-4 - - - 200 10 - - -

-

A

2,2 ,2 - - - 300 10 - - -

-

A

2, 1 1, 1 - - 300 10

---

-

A

8 - - - 100 10 - - -

-

A

----- -

4 .3 -

-

A, C

------

4 .3 -

0 to 75 A, C

--- ---

4 .3 -

0to 75 A, C

- 3 - 6 5 +4, 2 0.4 3.9 1000 -

A, C

1) See pages 4-9 for manufacturer's name. 2) -55 ° to +125 ° C unless otherwise indicated. 3) MC = Multiple Chip; TF = Thin-film hybrid.

May 17, 1966

175

DTL (continued)

Logic function

Type

Model

Logic

Propogo-

Levels

ti on Delay Mfr~ (ns)

Fon-in

Fon-out

Power Supply Diss. Voltage

(Volts)

Noise Margin

Typ. Mox. Typ. Mox. {mW} (Volts) "O" "l" (mV)

2
Temp
Range (o C)

Package Type

3
Remarks

E

AND/ NANO -

WS813Q WH 50

- 2 10 - 20 4.0 0.7 1.75 250 0 to 125 c

AND/ OR 2

5-input Dual
-
-

SN532 SN534

Tl 5 Tl 5

WS810Q WH 50 WS812Q WH 50
WS814Q WH 50

- - - 4 10 3-4 - - 300 -

D

- - - 4 10/ 3-4 - - 300 -

D

gate
c - 2 10 - 20 4.0 0.7 1.75 250 0 to 125 c - 3 10 - 15 4.0 0.7 1.75 250 0 to 125 c - 2 10 - 20 4.0 0.7 1.75 250 0 to 125

Modified DTL Modified DTL

NANO 3

-
Dual
Dual Triple Dual Triple Dual
Dual Dual Triple Triple 3-input Dual 4- input Dual Sextuple Dual 4-input Quad 2-input -
Dual Dual Dual Dual Dual Dual 4·input Quad 2-input Triple 3-input Dual Triple Dual Triple
Dual Quad Dual Dual 4- input
Dual 4- input
Quad 2- input
Triple 3- input
Dual 4-input
Dual 4- input
Quad 2- input
Triple 3- input
Dual 3-input

NC-11 PC -11

GI 8 GI 8

PC-15 GI 8

8214

VAR 10

WM506 WH 10

SWA05 SW 12 WM556 WH 12

UClOOlB SPR 15 SW708 SW 15

SW930 SW 17 SWAOl SW 18
SWA02 SW 18 WM226G WH 19 WM236G WH 19
WM241G WH 19 WM261G WH 19
WM296G WH 19 PL930 PH 20 PL946 PH 20 SWlOl SW 20 SW102 SW 20 SW115 SW 20 SW201 SW 20 SW204 SW 20
SW211 SW 20 SW221 SW 20 SW224 SW 20 SW231 SW 20 SW930 SW 20 SW946 SW 20 SW962 SW 20 WM201 WH 23 WM206 WH 23 WM211 WH 23 WM216 WH 23 WM221 WH 23 WM231 WH 23 WM246 WH 23 RC223 RA 25 RC224 RA 25 RC243 RA 25 SN15830 Tl 25

SN 15844 Tl 25

SN15846 Tl 25

SN15862 Tl 25

SN15930 Tl 25

SN 15944 Tl 25

SN 15946 Tl 25

SN15962 Tl 25

WM204 WH 28 WM214 WH 28 WM224 WH 28 RC201T RA 30

- 4- 5
- 6- 5

- 3+3 - 5

5 15 2 4 3 3 10 -
- 4 - 10 3 3 12 -
20 15 8 4 4 10 10 15

4 10
-4
-4
-----
-4 -
-2
4 3 -
-2
-3
4 -4
3 -
8 -
4 50 2 3 3 3
3 3 4 4
3 3 3 3 4 4
2 2 4 -
2, 3 -
4 -
--

-

8

- 15

- 15

- 16

- 16

- 16

- 16

- 16

-8

-8

5 7

5 7

5 7

- 11

- 11

- 11

- 11

- 11

- 11

8 -

8 -

8 -

- 11

- 11

- 11

- II

- 11

- 11

- II

6 -

2, 6 -

6 -

-8

- - - 20

- --8

---8

- - -8

- - - 20

- --8

- --8

4 4 - 11
6 6 - 11
8 8 - 11
- - 11 -

60 12, 4.2, 0 5 60 12, 4.2, 0 5 -

-3
60 12, 4.2 0 5 -

-3

50 6, 3, -3 0.5 3.5 -

57 4.5 0.40 1.8 500

15 5 30 4.5

0.8 4.8 900 0.40 1.8 500

30 6,-3 0.4 5.0 500

15 4 to 6 0.3 3.0 1000

5 4 to 6 0.3 3.0 1000

7 5

0.8 2.5 900

7 5

0.8 2.5 900

59 6

2 1 550

59 6

2 1 550

39 6

2 1 550

39 6

2 1 550

117 6

2 1 550

4 3-6 0.2 4.0 500

4 3-6 0.2 4.0 500

6 +4 , -2 0.6 2.0 500

6 +4, -2 0.6 2.0 500

6 +4,-2 0.6 2.0 500

7 6

0.35 2.0 550

7 6

0.35 2.0 550

7 6

0.35 2.0 550

7 6

0.35 2.0 550

7 6

0.35 2.0 550

7 6

0.35 2.0 550

7 4~ 0.4 2.6 1000

7 4-6 0.4 2.6 1000

7 4-6 0.4 2.6 1000

15 6

0.35 2.0 550

22.5 6.0 0.35 2.0 550

15 6

0.35 2.0 550

22.5 6.0 0.35 2.0 550

15 6

0.35 2.0 550

15 6

0.35 2.0 550

30 6.0 0.35 2.0 550

6 4.0 0.2 4.0 500

2, 6 4.0 0.2 4.0 500

6 4.0 0.2 4.0 500

5/ 4.5-5.5 - - 750

gate

15/ 4.5-5.5 - - 750

gate

5/ 4.5-5.5 - - 750

gate

5/ 4.5-5.5

gate

5/ 4.5-5.5 - - 750

gate

15/ 4.5-5.5 - - 750

gate

5/ 4.5-5.5 - - 750

gate

5/ 4.5 -5.5 - - 750

gate

7 6

0.35 2.0 550

7 6

0.35 2.0 550

7 6

0.35 2.0 550

9.5 6

- - 550

-
-
-
-
-
-
-
-
--
-
-
-
-
-
-
-
-
0 to 125 -
-
0- 75
0- 75
0- 75
-
-
-
-
-
-

A

MC RCDT

E

MC RCDT

E

MC RCDT

-
D
A D
-
A
A A A D D D D D
c c
A, E A, E A, E A, C, D A A, D A, D A D -
-
A, C, D D A, D D A, D D D D

TF
1000 Pf. load & Expandable And Expand. And Expand. Expandable
Expandable
And Expand. And Expand.
And Expand. And Expand. And Expand. And Expand. Expandable

D

D

D
D
D
D
A, C, D A, C, D A, D A

1) See pages 4-9 for manufacturer's name. 2) -55° to +125 ° C unless otherwise indicated. 3) MC= Multiple Chip; TF= Thin-film hybrid.

176

ELECTRONIC DESIGN

OTL (continued)

Logic Function

Type

Model

Propagati an Delay
Mfr.1 (ns)

Fan-in Typ. Max.

Fan-out

Power Supply Diss. Voltage

Typ. Max. (mW) (Volts)

Logic Levels (Volts)
"O" "l"

Maise Margin
(mV)

2
Temp
Range (oC)

Package Type

3
Remarks

3

Dual 4 input

RC211T RA 3D

- - 11 - 9.5 6

- - SSD -

A, D

Dual 3-input

RC221T RA 3D

- - 11 - 9.5 6

- - SSD -

A, D

Dual 4-i nput Quad 2- input

RC231G RA 3D WM246G WH 3D

. --

-

11 - 9.5 6 - 11 38 6

- - SSD 2 1 SSD -

D D

Sextuple

WM286G WH 3D

- - - 11 57 6

2 1 550 -

D

Triple

RC2(X)G RA 32

- - 11 - 9.5 6

- - 550 -

D

3-input

RC216G RA 32

- - 11 - 9.5 6

- - 550 -

D

4-input

RC2D4T RA 35

- - 11 - 9.5 6

- - 550 -

A, D

6-input

RC214T RA 35

- - 11 - 9.5 6

- - 55D -

A, D

8-input

RC224T RA 35

- - 11 - 9.5 6

- - 550 -

A, D

Dual

WS811Q WH SD

- 3 10 - 10 4.D D.7 1.75 250 0 to 125 c

NANO I NOR 4

Triple 3- input
Quad 2- input Dual 4- input Triple 3- input
Quad 2- input Dual 4- input Triple 3-input Quad 2-input Dual 4-input Quad Inverter Dual Dual
-
Dual Line Driver
Single 4-input Dual 4-input 3-input Dual -
-
Dual Dual
Quad Quad Single 4-input Dua I 4-i nput Single 4-i'nput Dual 4-input Single 4-input Quad Quad Dual Dual Dual Dual Dual
Quad Triple Triple Dual Dual Triple
Quad Dua I 4-i nput
Quad Triple
Dua I 4-i nput

RD-205 RD -206 R0-21D RD -3D5 RD-306 RD-310 RD-5D5 RD-506 RD-510 µL927
ADS
AID Al2 Al3 A45
A50 A52
UCIOOIB MC281G MC284G ADI
A02 A06 A07 Al4 Al5 A41 A42 A46 A47 A53 A54 ASS SElll SE113 CS700 CS701 CS716 CS720 CS721 CS727 CS730 SE112 SEl70 SEl80 DTµL930 DTµL946 DTµL962
MC830

RAD 7 RAD 7 RAD 7 RAD 7
RAD 7 RAD 7
RAD 7 RAD 7 RAD 7 FA lD
SI 12 SI 12 SI 12 SI 12 SI 12
SI 12 SI 12 SPR 12 MO 18
MO 18 SI 18 SI 18 SI 18 SI 18 SI 18 SI 18
SI 18
SI 18 SI 18
SI 18
SI 18 SI 18
SI 18
SIG 19
SIG 19
SIG 2D
SIG 20 SIG 20
SIG .20 SIG 20 SIG 2D SIG 20
SIG 20 SIG 20
SIG 20 FA 25 FA 25 FA 25 MO 25

Quad 2-input MC846 MO 25

Triple 3-input MC862 MO 25

Dual 4-input

MC930 MO 25

- 3 - 8 10 5
- 2 - 8 lD 5
- 4 - 8 10 5
- - - 5 lD 5
- - - 5 10 5 - - - 5 10 5 - 3 - 8 10 5 - 2 - 8 JO 5 - 4 - 8 10 5
- 1 - 5 24 3.D
- 4 - 10 15 5
- 4 - lD 15 5
- 4 - 5 15 5 - 4 - 5 15 5 - 4 - 10 15 5

0.25 5 800 D.25 5 800 0.25 5 800 .250 4.5 800 .250 4.5 800 .25D 4.5 8DO D.25 5 800 0.25 5 800 0.25 5 800 D.21 0.844 250
l.D 2.7 90D 1.0 2.7 900 l.D 2.7 900 1.0 2.7 900 1.1 2.7 700

-
0+75 0+75 0+75 -
-
-
0to 70

D

D

D

Expandable

D

D

D

D

D

D

Expandable

A, C

A, D Line Driver

-

Expandable

-

-

Expandable

A, D

- 4 - 10 15 5

1.1 2.7 700 0to 70 A, D

- 4 - 5 15 5

1.1 2.7 700 0to 70 A, D

-
-

15 -
--

4 -

35 6,-3 7.5 -

0.4 5.8 500
- - 550

-
-

A

- - - - 7.5 -

- - 550 -

-

- 4 - 15 7 5

1.0 2.7 900 -

A, D

- 4 - 15 7 5

1.0 2.7 900 -

A, D

- 4- 5 7 5

1.0 2.7 900 -

A, D

- 4- 575

1.0 2.7 900 -

A, D

- 2- 575

1.0 2. 7 900 -

D

- 2 - ID 7 5

1.0 2.7 900 -

D

- 4 - 15 7 5

1.1 2.7 700 Oto 70 A, D

- 4 - 15 7 5

1.1 2.7 700 0to+70 A, D

- 4- 575

1.1 2.7 700 0to 70 A, D

- 4- 575

1.1 2.7 700 0to 70 A, D

- 4 - 5 15 5

1.1 2.7 700 Oto 70 A, D

- 2- 575

1.1 2.7 700 0to 70 D

- 2 - 10 7 5

1.1 2.7 700 0 to 70 D

- 4 - 19 24 +4 0.4 3.9 1000 -

F

-
-

3 3-2 -

19 24 6 l 10

+4 0.4 3.9 1000 +4, -2 0.4 3.9 1000

-
-

A A, C

- 3.2 - 6 10 +4-2 0.4 3.5 1000 -

A, C

- 2 - 19 30 +4,-2 0.4 3.9 1000 -

A

- 2 - 6 10 +4 0.4 3.9 1000 -

F

- 3 - 6 10 +4 0.4 3.9 1000 -

F

- 2 - 6 10 +4 0.4 3.9 1000 -

F

- 5 - 6 10 +4 0.4 3.9 1000 -

F

- 3 - 19 24 +4 0.4 3.9 1000 -

F

- 3 - 6 10 +4 0.4 3.9 1000 -

F

- 2 - 6 10 +4 0.4 3.9 1000 -

F

- 4- 855

0.2 5 750 -

A, C

- 2- 855

0.2 5 750 -

A, C

- 3- 855

0.2 5 750 -

A, C

-- - 855

0.2 5 500 Oto 75 A, C

WI expander
WI expander
Expandable Expandable Expandable Modified DTL,

- - - 855

0.2 5 500 Oto 75 c

Expandable Modified DTL,

- - -855
- - - 855

0.2 5 500 0to 75 c

Expandable Modified DTL,

Expandable

0.2 5 500 -

A, C Modified DTL,

Expandable

1) See pages 4-9 for manufacturer's name. 2) -55° to +125°C unless otherwise indicated. 3) MC = Multiple Chip; TF= Thin-film hybrid.

May 17, 1966

177

DTL (continued)

Logic

Propogo-

Levels

2

ti on Delay

Fon-in

Fan-out

Power Supply Diss . Voltage

(Volts)

Noise Temp Margin Range

Package

3

I

Logic Function

Type

Model Mfr: (ns} Typ. Max. Typ. Mox. (mW) (Volts) "O" "l" (mV} (oC)

Type

Remarks

I

E

4

Quad 2·input MC946 MO 25

- - -855

0.2 5 500 -

c

Modified DTL,

Expandable

Triple 3·input MC962 MO 25

- - - 855

0.2 5 500 -

c

Modifi ed DTL,

Dual 4-input

Sl930 SI 25

- 8- 855

0.2 5.0 750

Expandable D

Dua I 4-input

519300 SI 25

- 8- 855

0.2 5.0 750 0to 75 D

Quad

Sl946 Si 25

- 2- 855

0.2 5 750 -

D

Quad

Sl946D SI 25

- 2-855

0.2 5 750 0to 75

D

·

I

Triple Triple

SJ962 SI 25 SJ962D SI 25

- 3- 855

0.2 5 750 -

D

- 3-855

0.2 5 750 0to 75

D

Single

SElOl SIG 25

- 4 - 5 6 +4,-2 0.4 3.9 1000 -

A, C

Single
Dual Dual
Dual Dual Dual 3-input Dual 3-input 4-input
3·input Dual 2·input Dual Dual Dua I 3-i nput
Dua I 3·input 5 ·input Dual 3-input Dua I 5·input

SE102 SE115 MC201 MC202 MC206 MC207 MC208 MC212 MC213 MC251 MC252 MC256 MC257 MC258 MC262 MC263 SN531 SN533 SN5311

SIG 25 SIG 25 MO 30 MO 30 MO 30 MO 30 MO 30 MO 30 MO 30 MO 30 MO 30 MO 30 MO 30 MO 30 MO 30 MO 30 Tl 30 Tl 30 Tl 30

- 3 - 5 6 +4,-2 0.4 3.9 1000 -

A, C

- 2 - 5 24 +4, - 2 0.4 3.9 1000 -

A, C

4 - - 5 6 8, ·8 0.6 2.5 500 -

A, C

3 - - 5 6 8,-8 0.6 2.5 500 -

A, C

2-2 - - 5 12 8,-8 0.6 2.5 500 -

A, C

- 2-3 - 5 12 4

4 .3 500 -

A, C

- 2-3 - 4 30 4

4 .3 500 -

A, C

- 3-3 - 5 12 4

4 .3 500 -

A, C

- 3.3 - 4 30 4

4 .3 500 -

A, C

- - - 564

0.6 2.5 500 0 to 75

A, C

- - - 56 4

0.6 2.5 500 0to 75

A, C

2 - - 5 12 4

4 .3 500 0to 75

A, C

- 2-3 - 5 12 4

4 .3 500 0to 75 A, C

- 2-3 - 4 30 4

4 .3 500 0to 75

A, C

- 3-3 - 5 12 4

4 .3 500 0to 75 A, C

- 3.3 - 4 30 4

4 .3 500 0to 75 A, C

- - - 10, 4 10 3 to 4 - - 300 -

D

Modified DTL

- - - 10, 10 10, 10 3 to 4 - - 300 -

D

Mod ified DTL

- - - 10 10/ 3-4 - - 300 -

D

Modified DTL

Triple 3- input SN5331 Tl 30

gate
- - - 10 10/ 3. 4 - - 300 -

D

Modified DTL

Quad 2- input SN5360 Tl 30

gate
- - - 10 10/ 3-4 - - 300 -

D

Modified DTL

gate

5-input Dual 5-input

SN7310 Tl 30 SN7311 Tl 30

Dual 3-input / SN7330 Tl 30

- - - 10 10 3-4 - - - - - 10 10/ 3-4 - - -
gate
- - - 10 10/ 3-4 - - -

0-70

D

0-70

D

-

0-70

D

Expandable

gate

Tr iple 3-input SN7331 Tl 30

- - - 10 10/ 3-4 - - -

0-70

D

gate

Quad 2-input SN7360 Tl 30

- - - 10 · 101 3-4 - - -

0-70

D

gate

Single
3·inpu t Dual Dual Dual 3-input Dual 4-input

SEllO SIG 35 MC254 MO 40 Sl944 SI 40 Sl944 0 SI 40
MC650G MO 50 MC651F MO 50

- 3 - 20 36 +4,-2 0.4 3.9 1000 -

A, C

3 - - 20 30 4

4 .3 500 0to 75 A, C

- 4 - 27 20 -

0.2 5 750 -

D

- 4 - 27 20 -

0.2 5 750 0to 75 D

-4

5 180 10

- 5 I = 5 180 10

9.7 .70 5V 9. 7 .70 5V

0to 75 0to 75

A
c

Modified DTL Modified DTL

NOR

-

5

-

Dual

-

NC-10 GI 8

- 4 - 5 170 12, 4.2, 0 5 -

-

PC-10 GI 8

-3

- 6 - 15 170 12, 4.2, 0 I 5 -

-

PC-14 GI 8

-3

- 3+ 3 - 5 170 12, 4.2 0 5 -

-

·3

8204

VAR 10·15 - 9 3 4 100 6,3 0.5 3.5 -

-

A

MC RCDT

E

MC RCDT

t

MC RCDT

-

TF

Exclusive-OR -

ND1006 NA 35

6

Dual 4-input
-

DTµL944 FA 40 MC204 MO 40

Dual 4-input

MC844 MO 40

Dua I 4-input

MC944 MO 40

Dual

_ SN5370 Tl 90

Dual

SN7370 Tl 90

- 3 10 - 20 6

0.2 4.0 750 -

-

- 4 - 27 20 5.0 0.2 5 750 -

A, C

3 - - 20 40 6, -6 0.6 2.5 500 -

A, C

- - - 27 20 5 - - - 27 20 5

0.2 5 500 0to 75 0.2 5 500 -

A, C A, C

Modified DTL
Modified on

- - - 10 20/ 3-4 - - 300 -

D

Modified DTL

gate

- - - 10 20/ 3-4 - - -

0-70

D

gate

Gate Expanders F

-

RC226 RA 2

2,3 6 - - - -

---

-

-

-

RC246 RA 2

-6-- - -

---

-

-

-

A04

SI 4

- 6-- - -

---

-

A, D Diode Array

1) See pages 4 -9 for manufacturer's name. 2) -55·0 to +125 ° C unless otherwise indicated. 3) MC = Multiple Chip; TF = Thin -film hybrid.

178

ELECTRONIC DESIGN

F
Inverters G

Logic Function

Type
5-input Dual 4-input Dua I 4-i nput Dua I 4·i nput Dual 4-input Dua I 4-i nput Dual 4-input Dual 4-input Dua I 4-input Dual Quad Single 6- input Dual Dual 4·input Dual 4- input Dual 4- input Dual Triple
Quad Dual

Logic Amplifier
H
Multivibrators I
Shift Bit J

-
Single-shot Single-shot 2- input Single -shot Single -shot Single -shot Single-shot Single-shot Single-shot Single -shot Single -shot Single· shot
-

Who makes what in DTL

Model

Propogo-
ti on Delay Mfr.1 {ns)

Fan-in Typ. Max.

Fan-out

Power Supply Diss. Voltage

Typ. Max. (mW) (Volts)

Logic Levels (Volts)
"O" "1"

Noise Margin
(mV)

A44

SI 4

SWA04 SW 4

SN7320 Tl 5

DTµL933 FA -

MC833 MO -

MC933 MO -

PL933 PH -

RD-111 RAD -

RD-711 RAD -

Sl933 SI -

Sl933D SI -

CS709 SIG -

CS731 SIG -

CS732 SIG -

SE105 SIG -

SE106 SIG -

UC1005B SPR -

UC1006B SPR -

SW933 SW -

SN15833 Tl -

SN15933 Tl -

WM21 7 WH -

WM227 WH -

- 6-- - -

---

- 6- - - -

---

- - - 4 10 3-4 - - -

- 4- - - -

---

- - ----

---

- -- ---

-- -

- - - - - 3-6 0. 2 4.0 500

- 4- - - -

---

- 4- - - -

---

- 4- - - -

---

-4-- - -

---

- 3- 1- -

-- -

- 2- 1- -

---

- 12 - 1 - -

---

- 6- 1- -

-- -

- 5- 1- -

- --

8- - - --

---

5- - - - -

---

4 - - - - 4-6 - - -

- - - 4 - 4.5-5.5 - - 750

- - - 4 - 4.5-5.5 - - 750

77- - - -

---

11 11 - - - -

---

2
Temp Range (oC)
0-70 -
0to 75
-
-
--
0to 75
-
-
-
-
-
0-75
-
-

Package

3

Type

Remarks

A, D D A, C
A, C A, C
c -
D D A, C F F A, C F -
-
D D A, C, D
D

Diode Array
Diode Array Modified DTL Modified DTL
Expandable Expandable Diode Array Diode Array

SE181 SIG 20

- 1 - 6 20 +4 0.4 3.9 1000 -

A

MClll5 MO Toff=45

- -

25 0 -

---

-

A

Ton=20

8201

VAF-. 10

8202 VAR -

1 - 4 - 50 6, 3, -3 0.5 3.5 -

-

2 - 8 - 100 6, 3, -3 0;5 3.5 -

-

-

TF

-

TF

NC/ PC16 GI 8

PC-1 8 GI 8

DTµL951 FA 25

A08

SI 30

A48

SI 30

8203 VAF 30

SN15851 Tl 50

SN15951 Tl 50

SN5380 Tl 100

SN7380 Tl 100

SE160 SIG -

SE161 SIG -

- - - 5 200 i2 , 4.2 o 5 -

-

- - - 5 200 12, 4.2 0 5 -

-

- - - 10 35 5.0 0. 2 5 950 -

- 1 - 5 42 5

1.0 2.7 900 -

-

1 -
-2

5 4

I 42 5

1.1 2.7 700

JOO 6, 3 0.5 3.5 -

0 to 70 -

- - - - - 4.5-5.5 - - 750 0- 75

- - - - - 4.5-5.5 - - 750 -

- - - 10 30 3-4 - - 300 -

- - - 10 30 3-4 - - -

0-70

- 2 - 4 25 +4,-2 0.4 3.9 1000 -

- 1 - 4 25 +4 0.4 3.9 1000 -

A, E E A, C A, D A, D D D D D A, C A, F

MC RCDT MC RCDT
TF Modified DTL

RC205T RA 200
WM205 WH t4

- - 4 - 75 6

- - 0.55 -

-

- - - 4 84 6.0 0.35 2.0 550 0 to 125 A, C t fT

l

Manufacturer

Symbol

Adders Binary Elements

Converters

Drivers/ Buffers

Q
z
c(

Fairchild

FA

·

General Instrument

GI

·

Motorola

MO

·

National Semi conductor

NA

·

·
· · ·

Gates

Q

a::

z a::

c(
z
........

0 ........
Q

Q
z

z
c(

c(

Q
z
c(
z

0 z
........
Q
z
c(
z

·

·

·

a:: 0 z

a, ·>;;;a::
..:!o

Gate Inverters Expanders

u

Logic Amplifiers

Multi· Shift vibrators Bit

)(

II.I

· ·

·

·

·

·· ·

·

Philco

PH

·

·

·

·

Radiation

RAD

·

·

·

·

Raytheon

RA

·

·

·

·

·

Signetics

SIG

·

· ·

·

· ·

·

Siliconix

SI

· ·

·

·

·

·

Sprague

· SPR ·

·

· ·

·

Stewart· Warner SW

·

Texas Instruments Tl

·

Varo

VAR

·

·

·

·

·

··· · ·

· ·

· ·

· · ·

Westinghouse WH

· · ·

·· ·

·

·

2. Direct-Coupled Transistor Logic

Logic function Type

Model

Logic

Propogo·

,

ti on Deloy

Fon-in

Levels

Fan-out

Power Supply Diss. Voltage

(Volts)

Noise Margin

Mfr. (ns) Typ. Mox. Typ. Mox. (mW) (Volts) ''O'' "1" (mV)

2
Temp Range (oC)

Package Type

3
Remarks

Adders A

Full Full

µL904 FA 14 MC908G MO 60

- 2 - 5 45 3
- - - 4 10 3

0.15 1.0 1150 0.9 0.1 -

-
-

A, C A

Full

PL908 PH 80

2 - - 4 10 3

0 0.8 -

-

-

Full

MWµL908 FA 90

- 2 - 4 10 3

0.220 0.805 350 -

A, C

Full

MC708G MO -

- - - 4 3 3.6 0.9

-

+15 to 55 A

Half

MC804G MO 14

- - - 5 45 3

1.1 0.1 1 -

Oto 100 A

Half

MC904G MO 14

- - - 5 45 3

1.1 0.1 -

-

A

Half

PL904 PH 14

2 - - 5 45 3

0 0.8 -

-

-

·

Half Half

NB1004 NA 17 HllOOl AL 22

- 2, 2 4, 5 - 45 3 - - - - 42 3

- 0.18 1.2 300 -
0.12 1.1 -

B

Half

Hll004 AL 22

- - - - 42 3

0.12 1.1 -

70

B

-

All

SI 35

- - - 5 40 5

900 -

A, D

Half

MC912G MO 66

- - - 4 8 3 0.9 0.1 -

-

A

-

SN1734 Tl 70/105 - - - 4 8 3

- - 150 -

A, D

Half

PL912 PH 80

2- - 483

0 0.8 -

-

-

Half

MWµL912 FA 90

- 2- 483

0.220 0.805 350 -

A, C

Half

MC704G MO -

- - - 16 20 3.6 1.1 0.1 -

15 to 55 A

Half

MC712G MO -

- - - 4 3 3.6 0.9 0.1 -

+15 to 55 A

-

SN1729 Tl 70/105 - - - 3 10 3

- - 150 -

A, D

Binary Elements B

Flip-Flop -
Flip-Flop Flip-Flop
-
J.K J.K Toggle J·K J.K J-K J-K J-K -
-
J·K JK gated input gated

MC702G MO 10

- 2 - 13 - 3.6 1.1 0.1 300 15 to 55 A

µL902 FA 14

- 1 - 4 22 3

0.21 1.0 250 -

A,C

1.5

MC802G MO 14
MC902G MO 14 PL902 PH 14

-- 2 - 4 28 3
2 - 4 28 3 1 - - 4 22 3

- 1.1 0.1 300 Oto 100 A

1.1 0.1 300

A

0 0.8 -

-

-

PL916 PH 20

1 - - 3 54 3

0 0.8 -

-

-

NB1002 NA 22

- 1 4 - 22 - - - - -

-

MC723G MO 25

- 4 - 10 - 3.6 1.1 0.1 300 15to 55 A

FµL92329 FA 40

- 3 - 10 54 3, 4 0.15 1.0 300 15 to 55 A, C

µL916 FA 40

- 2 - 3 54 3 0.15 1.0 250 -

A, C

MC726G MO 40 FF1514B IN 50

- - 5 - 16 - 3.6

1 1

6 96 12

1.1 0.1 300 0.2 <12 2500

15 to 55
-

A G

TF

MC816G MO 50 MC916G MO 50 MC826G MO 60 MC926G MO 60

- - 4 - 3 54 3

-4

3 54 3

- 5 - 5 56 3

- 5 - 5 56 3

1.1 0.1 300 OtolOO A

1.1 0.1 300 -

A

- 1.1 0.1 300 Oto 100 A

1.1 0.1 300

A

MC720G MO 70

- 4 - 2 - 3.6 0.9 0.1 250 15 to55 A

MC813G MO 70 MC913G MO 70

- 4 - 3 - 3.6 - 4 - 3 12 3

- 0.9 0.1 250 15 to 55 A

0.9 0.1 250

A

MWµL913 FA 100

MC920G MO 100

Rl2001 AL 150

Al6

CBS 3000

-
-

1 - 3 15 3

0.220 0.805 350

4 - 2 15 3 ---34

I 0.9

250

1 01.17 -

5 - 25 t40E 7 max 0.65 0.30 -

----

A, C

A

A

G

tµw

A13

CBS 5000 - 1 - 4 tl8C 7 max 0.65 0.30 -

-

G

tµw

A17

CBS 5000 - 1 - 25 t52E 7 max 0.65 0.30 -

-

G

tµw

Buffers
c

-

NBlOOO NA 8

- 1 5, 25 - 45 3

0.18 1.2 300 -

-

-.
-

B11004 AL 15 BC11001 AL 15

- - - - 30 3 - - - - 30 3

0.12 1.1 0.12 1.1 -

70
-

B B

-

MC800G MO 15

- - - 25 24 3

1.3 0.1 -

0 to 100 A

-

MC900G MO 15

- - - 25 24 3

1.3 O.l -

-

A

-

PL900 PH 15

1 - - 25 30 3

0 0.8 -

-

-

-

FµL90029 FA 16

- 6 - 80 20 3.6 0.15 1.0 300 15 to 55 A, C

-

µL900 FA 16 MC909G MO 57

- 2 - 25 30 3 - - - 30 10 3

- 0.15 1.0 250 -
1.1 0.1 -

A, C Modified DCTL A

-

SN1730 Tl 70

- - - 30 15 3 - - 150 -

A, D

-

MWµL909 FA 80

- 4 - 30 10 3

0.220 0.805 350 -

A, C

-

PL909 PH 80

1 - - 30 10 3

0 0.8 -

-

-

-

MC700G MO -

- - - 80 20 3.6 1.3 0.1 -

+15 to 55 A

-

MC709G MO -

- - - 30 - 3.6 1.1 0.1 -

15 to 55 A

Counter Adopters D

-

NB1001 NA 21

- 1 5 - 55 3

0.18 1.2 300 -

-

-

MC801G MO 22 MC901G MO 22

-
-

--

-

5 5

55 3 55 3

1.3 0.1 1.3 0.1 -

Oto 100 A

-

A

-

PL901 PH 22

2 - - 25 55 3

0 0.8 -

-

-

-

CllOOl AL 28

- - - - 50 3 0.12 1.1 -

-

B

-

Cll004 AL 28

- - - - 50 3

0.12 1.1 -

70

B

-

MC701G MO -

- - - 16 20 3.6 1.3 0.1 -

15 toss A

Gates E

NANO/ NOR 1

3-input 2-input Dual 3-input
3-input 4-input Dual 2-input Dual 3·input

FµL90329 FA 10 FµL91429 FA 10 FµL91529 FA 10 MC703G MO 10 MC707G MO 10 MC714G MO 10 MC715G MO 10

- 3 - 16 20 3.6 0.25 0.86 300 15 to 55 A, C - 3 - 16 20 3.6 0.25 0.8~ 300 15 to SS A, C - 3 - 16 20 3.6 0.25 0.8~ 300 15 to SS A, C
- 3 - 16 - 3.6 1.1 0.1 300 15 to 55 A
- 4 - 16 - 3.6 1.1 0.1 300 15 to 5S A - 2 - 16 - 3.6 1.1 0.1 300 15 to S5 A - 3 - 16 - 3.6 1.1 0.1 300 15 to 55 A

1) See pages 4-9 for manufacturer's name. 2) -55 ° to +125 ° C unless otherwise indicated. 3) MC = Multiple Chip; TF= Thin-film hybrid.

180

ELECTRONIC DESIGN

DCTL and RTL (continued)

Logic Function Type

Model

Logic

Propaga-

Levels

ti an Delay

Fan-in

Fan-out

Power Supply Diss. Voltage

(Volts)

Noise Margin

Mfr. 1 (ns) Typ. Max. Typ. Max. (mW) (Volts) "O" "1" (mV)

2
Temp Range (o C)

Package Type

3
Remarks

E

1

5 input

GllOOl AL 12

- - - - 10 3

0.12 1.1 -

-

B

5-input 4-input 4-input

Gl1004 AL 12 JllOOl AL 12 Jll004 AL 12

- - - - 10 3 - - - - 10 3 - - - - 10 3

0.12 1.1 0.12 1.1 0.12 1.1 -

70
-
70

B
B B

3-input

KllOOl AL 12

- - - - 10 3

0.12 1.1 -

-

B

3-inp4t

Kl1004 AL 12

- - - - 10 3

0.12 1.1 -

70

B

Dua I 2-i nput LllOOl AL 12

- - - - 20 3

0.12 1.1 -

-

B

Dual 2-input Ll 1004 AL 12

- - - - 20 3

0.12 1.1 -

70

B

Dua I 3-i nput MllOOl AL 12

- - - - 20 3

0.12 1.1 -

-

A

Dua I 3-i nptit 3-input

Ml1004 AL 12 µL903 FA 12

-

3

-

- ! 20 3 5 12 3

0.12 1.1 -

70

0.15 1.0 250 -

A A, C

Dual

µL914 FA 12

- 2 - 5 24 3

0.15 1.0 250 -

A, C

Dual 3-input µL915 FA 12

- 3 - 5 24 3

0.15 1.0 250 -

A, C

3·input

MC803G MO 12

- 3 - 5 27 3

1.1 0.1 300 Oto 100 A

4.jnput

MC807G MO 12

- 4 - 5 '27 3

1.1 0.1 300 0to100 A

Dual 2·input MC814G MO 12

- 2 - 5 54 3

1.1 0.1 300 Oto 100 A

Dual 3·inpul 3-input
4·input Dual 2·input Dual 3-input 3-input

MC815G MO 12 MC903G MO 12 MC907G MO 12 MC914G MO 12 MC915G MO 12 PL903 PH 12

- 3 - 5 54 3

- 3 - 5 27 3

- 4 - 5 27 3

- 2 - 5 54 3

-
3

3
-

- I5 -5

54 3 12 3

1.1 0.1 300 Oto 100 A

1.1 0.1 300
1.1 0.1 300
1.1 0.1 300 1.1 0.1 300

----

A A
A A

0 0.8 -

-

-

4-input

PL907 PH 12

4 - - 5 12 3

0 0.8 -

-

-

Dual 3-input PL915 PH 12

3 - - 5 24 3

0 0.8 -

-

-

Dual 2-input FµL91029 FA 25

- 2 - 4 3 3.6 0.25 0.86 300 15 to 55 A, C

4-input

FµL91129 FA 25

- 4 - 4 3 3.6 0.25 0.86 300 15 to 55 A, C

Dual 2·input MC710G MO 25

- 2 - 4 - 3.6 0.9 0.1 250 15 to 55 A

4-input

MC711G MO 25

- 4 - 4 - 3.6 0.9 0.1 250 55 to 55 A

Dua I 3·i nput Dua I 2·input
Dual 3-input Dual 3-input
Dual 2- input

MC718G MO 25 MC910G MO 25 MC918G MO 25 GG1514B IN 30 SN1731 Tl 35

- 3 - 4 - 3.6 - 2- 443 - 3- 443 3 3 - 6 96 12 - - - 4 2.5/ 3

0.9 0.1 250
0.9 0.1 250 0.9 0.1 250 0. 2 <12 2500
- - 150

-15 to55
--
-

A A A
A, D

gate

4-input 4·input

SN1733 Tl 35/70 - - - 4 4 3

MC911G MO 40

- 4- 443

- - - 150 -
0.9 0.1 250

A, D A

Dual 2-input PL910 PH 40

2- - 443

- 0.8 -

-

-

4-input

PL911 PH 40

4- - 443

- 0.8 -

-

-

Dual 2-input MWµL910 FA 45

- 2- 443

0.15 1.0 350 -

A, C

4-input

MWµL911 FA 80

- 4- 443

0.15 1.0 350 -

A, C

NOR 2

3-input

NB1003 NA 11

- 3 5 - 19 3

0.18 1.2 300 -

-

4-input

NB1007 NA 11

- 4 5 - 19 3 0.18 1.2 300 -

-

Dual 2-input NB1014 NA 11

- 2.2 5 - 38 3

0.18 1.2 300 -

-

Dual 3-i nput NB1015 NA 11

- 3,3 5 - 38 3

0.18 1.2 300 -

-

4-input

µL907 FA 12

- 4 - 5 12 3

0.15 1.0 250 -

A, C

Dual 3-input µ7095 PH 13

3 - - 5 3 3-6 0.2 1.0 300 -

A

Dual

RC323 RA 18

- - 5 - 4 3 - - 300 -

A, D

-

RC103 RA 20

3 - 5 - 15 3

0.15 1.0- 300 -

-

3.0

-

RC123 RA 20

3 - 5 - 15 3

0.15 l.G- 300 -

-

3.0

Dual

RC124 RA 20

2, 3 - 2, 5 - 2, 15 3

0.15 1.0- 300 -

-

3.0

Dual

RC144 RA 20

2, 3 - 2, 5 - 2, 15 3

0.15 1.0- 300 -

-

3.0

-

RC1033 RA 20

3 - 5 - 15 3

0.2 1.0- 300 -

-

3.0

-

RC1233 RA 20

3 - 5 - 15 3

0.15 1.0- 300 -

-

3.0

Dual

RC-1243 RA 20

2, 3 - 2, 5 - 2, 15 3

0.2 1.0- 300 -

-

3.U

Dual

RC1443 RA 20

2, 3 - 2, 5 - 2, 15 3

0.2 1.0- 300 -

-

3.0

-

RC401 RA 23.5

- - 4 - 3.5 3

- - 300 -

A, D

Dual

RC322 RA 25

2, 2 - 2, 5 - 2, 5 4

0.15 1.0- 300 -

-

4. 0

Dual

RC324 RA 25

2, 3 - 2, 5 - 2, 5 4

0.15 1.0- 300 -

-

4.0

Dual

RC342 RA 25

2, 2 - 2, 5 - 2, 5 4 0.15 1.0- 300 -

-

4.0

Dual

RC344 RA 25

2, 3 - 2, 5 - 2, 5 4

0.15 1.0- 300 -

-

4.0

-

RC1031 RA 25

3 - 5 - 15 3

0.225 1.0- 300 0 to 65 -

3.0

-

RC1032 RA 25

3 - 4 - 15 3

0.25 1.0- 200 0 to 65 -

3.0

-

RC1231 RA 25

3 - 5 - 15 3

0.225 1.0 - 300 0 to 65

3.0

-

RC1232 RA 25

3 - 4 - 15 3

0.25 1.0 - 200 0 to 65

2.0

-

WS277 WH 25

- 3 - 6 15 3

0.5 1.0 275 -

-

Dual Inverter AID

CBS 3000 - l - 5 tl80 7

0.30 0.65 -

-

G

tµw

Dual

All

CBS 3000 - 5 - 30 t816 7 max 0.30 0.65 -

-

G

tµw

1) See pages 4-9 for manufacturer's name. 2) -55 ° to +125 ° C unless otherwise indicated. 3) MC = Multiple Chip; TF = Thin-film hybrid.

May 17, 1966

181

DCTL and RTL <continued)

Logic Function Type

Model

Propogo· ti on
Deloy Mfr.1 (ns)

Fan-in Typ. Mox.

Fan-out

Power Supply Diss. Voltage

Typ. Mox. (mW) (Volts)

Logic Levels (Volts)
"O" "1"

Noise Margin
(mV)

2
Temp Range
(o C)

Package Type

3
Remarks

E

2

3-input

Al4

CBS 3000 - 1 - 5 tl20 7 max 0.30 0.65 -

-

G

tµw

Gate Expanders F

Dual 3-input Dual 3-input
Dual 2-input Dual 2-input Dua I 2- input Dual 2-input Dual 2-input

EllOOl AL 12 Ell004 AL 12
MC721G MO 25 MC921G MO 25 SNl 732 Tl 35 PL921 PH 40
FµL92129 FA MWµL921 FA -

-----3

0.12 1.1 -

-

A

-- - - - - 3
2 - - - 3.6 - 2- - - 3 - -- ---

0.12 1.1 -
0.9 0.1 250 0.9 0.1 250 - - 150

-70
15 to 55

. AA

A

-

A, D

2-- 303

0 0.8 -

-

-

- 2.66 - 0.5 0 3.6 0.25 0.86 300 15 to 55 A, C

- 2.66 - 0.5 - 3

0.220 0.805 350 -

A, C

Inverters

Quad

MC727G MO -

- - - - - 3.6 1.1 0.1 -

15 to 55 A

G Multi vibrators

Quad Quad
Single-shot

MC827G MO - I MC927G MO -
T35-002 AL 100

- - - 5 48 3 - - - 5 48 3

1.1 0.1 -
1.1 0.1 -

- - - - 20 3 . ·0.12 1.1 -

Oto 100 A

-

A

-

A

·

H

Single· shot .A.15

CBS 4000 - 5 - 25 t408 7 max 0.30 0.65 -

-

G

t µw

Shift Registers I
I

Full 2-Phase PllOOl AL 35

Ful I 2-phase Pll004 AL 35

JK Full

RllOOl AL 35

JK Full

Rll004 AL 35

Full

RC301 RA 60

Full

PL913 PH 80

Half

NB1005 NA 11

Half .

PL905 PH 15

Half

FµL90529 FA 18

Half

µL905 FA 18

Half

MC705G MO 20

Half w/ o Inverter MC706G MO 20

Half

SllOOl AL 22

Half

Sll004

Half w/o Inverter µL906

AF.AL

22 22

Half

MC805G MO 22

Half

MC905G MO 22

Half w/ o Inverter MC906G MO 22

Half

PL9tXi PH 22

Half w/ o Inverter MC806G MO 23

-

SN1735 Tl 70

I

- - - - 84 3 - - - - 84 3 - - - - 84 3 - - - - 84 3 - - 5- 43 1 - - 3 15 3 - 1 4,5 - 53 3
1 - - 4 53 3
- 3 - 5 53 3
- 3 - 5 53 3
- 3 - 13 - 3.6 - 3 - 13 - 3.6 - - - - 50 3 - - - - 50 3 - 3 - 4 36 3 - 3 - 5 64 3 - 3 - 5 64 3 - 3 - 4 43 3
1 - - 4 36 3
- 3 - 4 43 3
I - - - 3 15 3

0.12 1.1 0.12 1.1 0.12 1.1 0.1 2 1.1 -
- - 300
0 0.8 0.18 1.2 300 0 0.8 0.25 0.86 300 0.15 1.0 250
1.1 0.1 300 1.1 0.1 300
0.12 1.1 -
0.12 1.1 0.15 1.0 250
1.1 0.1 300
1.1 0.1 300
1.1 0.1 300
0 0.8 -
1.1 0.1 300 - - 150

-

A

70

A

-

A

70

A

-

A, D

-

-

-

-

-

-

15 to 55 A, C

-

A, C

15 to 55 A

15 to 55 A

-

B

70

B

-

A, C

--0to100 A A A

-

-

0 tolOO A

-

A, D

1) See pages 4-9 for manufacturer's name. 2) -55 ° to +125 ° C unless otherwise indicated. 3) MC= Multiple Chip; TF= Thin-film hybrid.

Who makes what in DCTL/RTL

Manufacturer

Symbol

Adders

Binary Buffers Counter

Elements

Adapters

Gates

NANO/ NOR

NOR

Gate

Inverters MuItivibrators Shift

Expanders

Registers

Amel co

AL

·

·

·

·

·

·

CBS

CBS

·

·

·

·

·

Fairchild

FA

·

·

·

·· ·

·

lntellux

IN

·

·

Motorola

MO

·

·

·

·

·

· ·

·

National Semiconductor NA

·

·

·

·

·

·

Philco

PH

·

·

·

·

· · ·

·

Raytheon

RA

·

·

Siliconix

SI

·

Texas Instruments

Tl

·

·

·

·

·

Westinghouse

WH

·

182

ELECTRONIC DESIGN

UNITROD~

in power rectifiers:

in power zeners:

in high voltage

'-

assemblies:

in fast recovery rectifiers:

in radiation resistant diodes:

High surge capability: 100 amp or 250 watt this size

Stability:
Controlled avalanche:

All parts meet initial specifications for each parameter after 2000 hours life test at 100° C at full rating
Equal surge capability in both forward and reverse directions

Failure rate< 0.0052%/1000 hours at 60% confidence without acceleration factors

May 17, 1966

THIS NEW RECTIFIER AND ZENER CATALOG contains

complete technical specifications, application

data, etc. on all Unitrode diodes. To receive your

copy, circle the reader service number below

or contact your nearest Compar office .
UNITRODE CORPORATION

-

580 PLEASANT STREET · WATERTOWN, MASSACHUSETIS 02172 · TELEPHONE (617) 926·0404 · TWX (710) 327-1296

ON READER-SERVICE CARD CIRCLE 58

183

3. Transistor-Transistor Logic

Logic function

Type

Model

Logic

Propoga·

Levels

Mir'.

ti on Delay (ns)

··o·· Fan-in

Fan·out

Power Supply Diss. Voltage

(Volts)

Moise Margin

Typ. Max. Typ. Mox. (mW) (Volts)

"l" (mVJ

2
Temp Range (o C)

Package Type

3
Remarks

Adders
A

Half

SG90,SG91,SY 12

- - 6 20 15 -

- - 1000 -

-

Differ in

SG92,SG93

Temp & F.0.

Full

SN5480 Tl Add:!() - - - - 105 4.5 ·5.5 - - 1000 -

D

Includes

·

Carry:8

gating

Full

SN7480 Tl Add: 70 - - - - 105 4.75 - - 1000 0 to 70 D

Includes

Carry:8

5.25

gating

Binary Elements
B

R-S
Clocked
Single-phase
J-K J-K Dual Dual Dual Dual Dual J-K J-K Single Dual latch Dual latch
Dual M/ S Master I Slave
Dual M/ S
J-K J-K J-K
Master/Slave J-K
J-K/R-S J-K/ R-S
Gated R-S FF R-S R-S R-S R-S Dual Dual Dua.I Dual J-K J-K J-K J-K J-K J-K J-K J-K J-K J-K J-K J-K J-K J-K J-K J-K

SFlO,SFll,SY 12 SF12,SF13 SF20,SF21,SY 12 SF22,SF23 SF30,SF31,SY 12 SF32,SF33 SF50,51 SY 12 SF52,53 SY 12 TFF3011 TR 18 TFF3013 TR 18 TFF3015 TR 18 TFF3017 TR 18 SE826 SIG 20 SF60,61 SY 25 SF62,63 SY 25 SE825 SIG 30 SN5474 Tl 30 SN7474 Tl 30
SN5473 Tl 35 SN7472 Tl 35

--
--
--
-4 -4 '- 3 -3 -2
-2
--4
- I4
I~1=
I I -
--

SN7473 Tl 35

--

SW5470 SW 40 SW7470 SW 40 SN5470 Tl 40

6 6 -
I- -

SN5472 Tl 35 SN7470 Tl 40

---

SN54948 Tl 40 SN74948 Tl 40

---

MC652 MO 80

-6

SWFlO SW 1 20MHz 6 -

SWFll SW 20MHz 6 -

SWF12 SW 20MHz 6 -

SWF13 SW 20MHz 6 -

SWF20 SW 20MHz 6 -

SWF21 SW 20MHz 6 -

SWF22 SW 20MHz 6 -

SWF23 SW 20MHz 6 -

SWF50 SW 20MHz 6 -

SWF51 SW 20MHz 6 -

SWF52 SW 20MHz 6 -

SWF53 SW 20MHz 6 -

SWF250 SW 30MHz 6 -

SWF251 SW 30MHz 6 -

SWF252 SW 30MHz 6 -

SWF253 SW 30MHz 6 -

SWF260 SW 30MHz 6 -

SWF261 SW 30MHz 6 -

SWF262 SW 30MHz 6 -

SWF263 SW 30MHz 6 -

SF250,251 SY 30MHz - -

SF252,253 SY 30MHz - -

SF260,261 SY 30MHz - -

SF262.,263 SY 30MHz - -

6 20 15 -

- - 1000 -

6 20 15 -

- - 1000 -

6 20 15 -

- - 1000 -

- 15 15 8

0.26 3.3 1000 -

- 12 15 8

0.26 3.3 1000 0,+75

- 20 30 5-6 0.20 3.0 1000 -

- 7 30 5-6 0.20 3.0 1000 -

- 20 30 5-6
- 7 30 5-6 - 5 50 +5

0.20 3.0 1000 -
0.20 3.0 1000 0.4 2.4 1000 -

- 15 45 5.0 .26 3.3 1000 -

- 12 45 5.0 .26 3.3 1000 0,+75

- 10 50 +5 0.4 2.4 1000 -

- 10 40 / ff 4.5-5j - - 1000 -

- 10 40/ ff 4.75·

- 1000 0 to 70

5.25

- 10 50 / 4.5-5.5 - - 1000 -

- 10 50 4.75·

- 100 0 to 70

5.25

- 10 50 I ff 4.75- - - 1000 0 to 70

5.25
- 10 - 65 4.5-5.5 0.4 3 1000
10 - 65 4.8-5.3 0.45 3 900 Oto+75

- 10 60 4.5 to - - 1000 -

5.5

- 10 50 4.5-5.~ - - 1000 -

- 10 60 4.75- - - 1000 0-70

5.25

- 10 60 4.5-5.5 - - 1000 -

- 10 60 4.75- - - 1000 0-70

-4
15 7 12 -

5.25 200 10 10 .70 5V 30 4.5-6 0.4 3 1000 30 4.5-6 0.4 3 1000 30 4.5-6 0.45 3 900

0 to 75
--
Oto+75

6 - 30 4.5-6 0.45 3 900 0to+75

15 7 -
12 6 15 7 12 6 12 6 -

35 4.5-6 0.4 3 35 4.5-6 0.4 3 35 4.5-6 0.45 3 35 4.5-6 0.45 3 50 4.5-6 0.4 3 50 4.5-6 0.4 3 50 4.5-6 0.45 3 50 4.5-6 0.45 3 55 4.5-6 0.4 3 55 4.5-6 0.4 3

- 1000 -
1000 900 0to +75
- 900 0 to+75
1000
1000 -
900 0 to+75
- 900 0 to+75
1000
1000 -

10 -
5 -
12 -
6 10 -

55 4.5-6 0.45 3 55 4.5-6 0.45 3 55 4.5-6 0.4 3 55 4.5-6 0.4 3 55 4.5-6 0.45 3

900 Oto+75

900 0 to+75

1000 1000

--

900 0 to+75

5 - 55 4.5-6 0.45 3 900 Oto+75

- 12 55 -

0.25 3.5 1000 -

- 10 55 -

0.25 3.5 1000 0,+75

- 12 55 - 10 55 -

0.25 3.5 1000 0.25 3.5 1000 0,+75

-

Differ in

Temp & F.0.

-

Differ in

Temp & F.O.

-

Differ in

Temp & F.O.

D, G

D, G

A, F

A, F

A, F

A, F

F

D, G

D, G

F

D

D

D D

D

-

-

D

Single-phase

D

D

Single phase

D D

A, C -
-
-
-
-
-
-
-
-
-
-
D, G
D, G
D, G
D, G

Drivers / Buffers
c

Dual Triple 2-input Triple 2- input Dual 4-input

SE855 SIG 15 SG160,161 SY 15 SG162,163 SY 15 SN54932 Tl 18

- 4 - 30 25 +5 0.4 2.4 1000 -

F

-

-
-
-

-

- 15 15 -

0. 26 3.3 1000 -

12 15

0.26 3.3 1000 0 to 75

30 25/ 4.5-5.5 - - 1000 -

D, G D, G D

gate

1) See pages 4-9 for manufacturer's name. 2) -55 ° to +125°C unless otherwise indicated. 3) MC = Multiple Chip; TF= Thin-film hybrid.

184

ELECTRONIC DESIGN

TTL (continued)

Logic Function Type

Model

Propogo-

ti on Deloy

Fon-in

Fon-out

Power Supply Diss. Vol toge

Logic
Levels {Volts)

Noise Morgin

Mir: {ns) Typ. Max. Typ. Max. (mW) (Volts) ''O'' "l" (mV)

2
Temp Range (oC)

Package Type

c

Dua I 4-i nput SN74932 Tl 18

- - - 30 25/ 4.75- - - 1000 0 to 70 D

Dua I 4-i nput Dual 4-input

SG130, 131 SY 25 SG132, 133 SY 25

--
--

-
-

gate 5.25

30 30 -

0.26 3. 3 1000 -

24 30 -

0.26 3.3 1000 Qto 75

D, G D, G

D

AND/OR/ NOT Dual 4-input SWG210 SW 7

1

Dual 4-input Dua I 4-i nput

SWG211 SW 7 SWG212 SW 7

Dua I 4-i nput SWG213 SW 7

Expandabl~Quad SWG250 SW 7.5

Expandable Quad SWG251 SW 7.5

Expandable Quad SWG252 SW 7.5

Expandable Quad SWG253 SW 7.5

Dual

SWG5A SW 12

Dual

SWG5B SW 12

4
4
4 4 9 9 9
--9

-
-------
3 4

12 6 10 -

30 4.5-6 0.4 3 30 4.5-6 0.4 3 30 4.5-6 0.45 3

- 1000 -
1000 900 0 to+75

5 6 6 10
-5

-----
15

30
43 43 43
43 15

4. 5-6 0.45 3
4.5-6 0.4 3 4.5-6 0.4 3 4.5-6 0.45 3
4.5-6 0.45 3
5 0.5 3.0

900 1000
1000 900 900
1000

0 to+75 -
-
0 to+75 0 to+75
-

- 15 J5 5

0.5 3.0 1000 -

-
-
-
-
-
-
A A

Dual 4-input Dua I 4-input Dua I 4-input

SWGJJO SW 13 SWGlll SW 13 SWG112 SW 13

20 20 20 -

15 7 -
J2 -

20 4.5-6 0.4 3 20 4.5-6 0.4 3 20 4.5-6 0.45 3

- JOOO -
JOOO 900 0to+75

-
-
-

Dual 4-input Quad 2-input Quad 2-input Quad 2-i nput
Quad 2-input Dual
Triple 3-input Triple 3-input Triple 3-input Triple 3-input
Quad 2- input

SWGJJ3 SW 13 SWG50 SW 14 SWG51 SW 14 SWG52 SW 14 SWG53 SW 14 SWG21 SW 15 SWGIOO SW 15 SWGJOl SW 15 SWG19'2 SW 15 SWG103 SW 15 SN7453 Tl 15

20 20
20 20 20 3 20
20 20
20
-

-
-
---------

6 -

15 -

7 -

12 -

6 -

7 15 7 12
6 -

-----
10

20 4.5-6 0.45 3 900 0to+75

- 20 4.5-6 0.4 3 JOOO -
20 4.5-6 0.4 3 JOOO

20 4.5-6 0.45 3 900 0 to+75

20 4.5-6 0.45 3 900 0to+75

J5 5

0.5 3.0 1000 -

25 4.5-6 0.4 3 1000 -

25 4.5-6 0.4 3 1000 -

25 4.5-6 0.45 3 900 0 to+75

25 4.5-6 0.45 3 900 Oto+75

25 4.75- - - JOOO 0 to 70

-
-
A -
-
D

5.25

NANO 2

Quad 2-input
Quad 2-i nput Quad 2-input Quad 2-input Dual 4-input Dual 4-input Dua I 4-i nput Dual 4-input 8-input 8-input
8-input 8-input Single
Dual Triple
Quad Dual
-
Dual Dual Dual
Dual 4-input Dual 4·input Dua I 4-i nput
Dual 4·input Power Driver
Power Driver Power Driver Power Driver
Quad 2-input
Quad 2-input Quad 2-input Quad 2·input
Quad 2-input
Triple 3-input Dual 4-input
Quad 2·input Triple 3-input
Dual 4·input Quad 2-input

SWG220 SW 6 SWG221 SW 6 SWG222 SW 6 SWG223 SW 6 SWG240 SW 6 SWG241 SW 6 SWG242 SW 6 SWG243 SW 6 SWG260 SW 8 SWG261 SW 8 SWG262 SW 8 SWG263 SW 8 SE808 SIG 10 SE816 SIG JO SE870 SIG 10 SE880 SIG 10 SWJ03 SW 10 SW104 SW 10 SWG4A SW 11 SWG48 SW 11 SWGJ4 SW 11 SWG40 SW 12 SWG41 SW 12 SWG42 SW 12 SWG43 SW 12
SWG130 SW 12 SWG131 SW 12
SWG132 SW 12 SWG133 SW 12 SWG140 SW 12 SWG141 SW 12 SWG142 SW J2 SWG143 SW 12 SW5400 SW 13 SW5410 SW 13 SW5420 SW 13 SW7400 SW 13 SW7410 SW 13 SW7420 SW 13 SN5400 Tl 13

2 - 12 - 22 4.5-6 0.4 3 1000 2 - 6 - 22 4.5-6 0.4 3 1000 -

-

2 2

-
-

10 5 -

22 4.5-6 0.45 3 22 4.5-6 0.45 3

900 900

Oto+75 Oto+75

-

4 - 12 - 22 4.5-6 0.4 3 1000 -

-

4 - 6 - 22 4.5-6 0.4 3 1000 -

-

4 - JO - 22 4.5-6 0.45 3 900 Oto+75 -

6 4 - 5 22 4.5-6 0.45 3 900 0to+75 -

8 - 12 - 22 4.5-6 0.4 3 1000 -

-

8 - 6 - 22 4.5-6 0.4 3 JOOO -

-

8 - JO - 22 4.5-6 0.45 3 900 Oto+75 -

8 - 5 - 22 4.5-6 0.45 3 900 0to+75 -

- 8 - JO 10 +5 0.4 2.4 1000 -

F

- 4 - 10 JO +5 0.4 2.4 1000 -

F

-

3 2

-
-

10 JO +5 10 10 +5

- 0.4 2.4 JOOO -
0.4 2.4 1000

F F

- 4 - 15 20 5

0.4 3.0 1000 -

A

- 8 - 15 20 5

0.4 3.0 JOOO -

A

- 3 - 15 J5 5

0.5 3.0 1000 -

A

- 4 - 15 15 5

0.5 3.0 1000 -

A

- 4 - 7 15 5

0.5 3.0 1000 -

A

4 - 15 - 15 4.5-6 0.4 3 JOOO -

-

4 - 7 - 15 4.5-6 0.4 3 1000 -

-

4 - J2 - 15 4.5-6 0.45 3 900 Oto+75 -

4 - 6 - 15 4.5-6 0.45 3 900 0to+75 -

4 - 15 - 30 4.5-6 0.4 3 1000 -

-

4 - 15 - 30 4.5-6 0.4 3 1000 -

-

4
4 2

-
-

- 24 -
12
15 -

30 4.5-6 0.45 3 30 4.5-6 0.45 3 15 4.5-6 0.4 3

900 Oto+75 900 Oto+75
1000 -

-

2 - 7 - 15 4.5-6 0.4 3 1000 -

-

2 - 12 - 15 4.5-6 0.45 3 900 0to+75 -

2 2

-

6 -
10 -

15 4.5-6 0.45 3 10 4.5-5.5 0.4 3

- 900 0 to+75
1000

-
-

3 4
2

-

10 -
10 10 -

10 4.5-5.5 0.4 3 10 4.5-5.5 0.4 3 10 4.8-5.3 0.45 3

- 1000 -
1000 900 0 to+75

-
-

3 - 10 - 10 4.8-5.3 0.45 3 900 0to +75 -

4 - 10 - 10 4.8-5.3 0.45 3 900 0to +75 -

- - - 10 10/ 4.5to - - 1000 -

D

gate 5.5

1) See pages 4-9 for manufacturer's name. 2) -55 ° to +125 ° C unless otherwise indicatea. 3) MC = Multiple Chip; TF = Thin-film hybrid.

3
Remarks
Expandable Expandable Expandable Expandable
Expandable Expandable Expandable Expandable Expandable Expandable Expandable Expandable OR Expandabk:l Expandable Expandable Expandable Expandable

May 17, 1966

185

TTL (continued)

Logic Function Type

Model

Logic

Mfr~

Propaga· ti an Delay (ns)

Fan·in

Fan·aut

Power Supply Diss. Voltage

Typ. Max. Typ. Max. (mW) (Volts)

Levels (Volts)
"O" "1"

Noise Margin (mV)

D

2

Triple 3·input SN5410 Tl 13

- - - 10 10/ 4.5to - - 1000
gate 5.5

Dua I 4- input SN5420 Tl 13

- - - 10 10/ 4.5 to - - 1000

gate 5.5

Quad 2- input SN7400 Tl 13

- - - 10 JO/ 4.75- - - JOOO

gate 5.25

Triple 3-input SN74JO Tl 13

- - - 10 10/ 4.75- - - 1000

gate 5.25

Dual 4- input SN7420 Tl 13

- - - 10 JO/ 4.75- - - 1000

Dual 4-input SN54930 Tl 13

gate 5.25
- - - JO lQ I 4.5-5.5 - - 1000

Quad 2-i nput SN54946 Tl 13

gate - - - 10 10/ 4.5-5.5 - - 1000
gate

Triple 3-input Dual 4-input

SN54962 Tl 13 SN74930 Tl 13

- - - JO IOI 4.5-5.5 - - 1000 gate
- - - JO JO/ 4.75- - - 1000
gate 5.25

Triple 3-input SN74962 Tl 13

- - - 10 10/ 4.75- - - 1000

Quad 2-input
8·input 8-input 8-input 8-input 8-input 8·input 8-input

SN74946 Tl 13
SW5430 SW 15 SW7430 SW 15 SWG60 SW 15 SWG61 SW 15 SWG62 SW 15 SWG63 SW 15 SN5430 Tl 15

-

-

-

gate 5.25 10 10/ 4.75- -

- 1000

gate 5.25

8 - 10 - JO 4.5·5.5 0.4 3 1000

8 - 10 - JO 4.8-5.3 0.45 3 900

8 - 7 - 15 4.5-6 0.4 3 1000

8 - 7 - 15 4.5-6 0.4 3 1000

8 - 12 - 15 4.5-6 0.45 3 900

8 - 6 - J5 4.5-6 0.45 3 900

- - - JO JO 4.5 to. - - 1000

8-input

SN7430 Tl 15

5.5
- - - 10 JO 4.75- - - 1000

8-input 8-input

SN54965 Tl 15 SN74965 Tl 15

5.25
- - - 10 10 4.5-5.5 - - 1000 - - - 10 JO 4.75- - - 1000

8-input 8-input 8-input 8-input Dua I 4-input Dual 4-input Dual 4-inpul
Dual 4-input

SWG16 SW 15

-8

SWG120 SW 16

20 -

SWG121 SW 16

20 -

SWG122. SW 16

20 -

SWG123 SW 16

20 -

SW5440 SW 17.5 4 -

- SW7440 SW 17.5
SN5440 Tl 18

4 --

SN7440 Tl 18

--

5.25

7 - 15 5

0.5 3.0 1000

7 - 15 4.5-6 0.4 3 1000

7 - J5 4.5-6 0.4 3 1000

12 - 15 4.5-6 0.45 3 900

6 - 15 4.5-6 0.45 3 900

30 - 10 4.5-5.5 0.4 3 1000

30 - JO 4.8-5.3 0.45 3 900

- 30 25/ 4.5 to - - 1000

gate 5.5

- 30 25 / 4.75- - - 1000

gate 5.25

Dual

SW402 SW 100

- 3 - 5 0.10 3.0 0.3 2.0 300

NANO / NOR 3

Quad 2-input Quad 2-input Dua I 4-i nput Dual 4-input Single 8-input Single 8-input
-
Dual
-
-
-
Dual Dual Dual Dual Dual Dual Dual Dual Triple 3-input Triple 3-input Dual 4-i nput

Single 8-input

SG220,221 SY 6 SG222,22J SY 6 SG240,24 SY 6 SG242,24J SY 6 SG260,261 SY 8 SG262,m SY 8 BOl SI 10 802 SI 10 TNG3041 TR 10
TNG3043 TR 10 TN G3045 TR 10 TNG3047 TR 10 TNG3141 TR 10 TNG3J43 TR 10 TNG3145 TR 10 TNG3147 TR 10 TNG3241 TR 10 TNG3243 TR 10 TNG3245 TR 10 TNG3247 TR 10 SG190,191 SY 10
SG192,193 SY JO SG40,SG4J ,SY 12 SG42,SG43
SG60,SG61,SY 12 SG62 ,SG63

- - - J2 22 -

0.25 3.5 1000

- - - JO 22 -

0.25 3. 5 1000

- - - J2 22 -

0.25 3.5 1000

- - - 10 22 -

0.25 3.5 1000

- - - 12 22 -

0.25 3.5 1000

- - - JO 22 -

0. 25 3. 5 1000

- 8 - 15 J6.5 4.5 0.5 2.3 1000

- 4 - 15 16.5 4.5 0.5 2.3 1000

- 8 - 20 J5 5-6 0.20 3.0 1000

- 8 - 7 J5 5-6 0.20 3.0 1000

- 6 - 20 15 5-6 0.20 3.0 1000

- 6 - 7 15 5-6 0.20 3.0 1000

- 4 - 20 15 5-6 0.20 3.0 1000

- 4 - 7 15 5-6 0.20 3.0 1000

- 3 - 20 J5 5-6 0.20 3.0 1000

- 3 - 7 15 5-6 0.20 3.0 1000

- 4 - 20 J5 5-6 0.20 3.0 1000

- 4 - 7 J5 5-6 0.20 3.0 1000

- 3 - 20 15 5-6 0.20 3.0 1000

- 3 - 7 J5 5-6 0.20 3.0 1000

- - - 15 15 -

0.26 3.3 1000

- - - 12 15 -

0.26 3.3 1000

- - 6 20 15 -

- - 1000

- - 6 20 15 - - - 1000

1) See pages 4-9 for manufacturer's name. 2) -55 ° to +125 ° C unless otherwise indicated. 3) MC = Multiple Chip; TF = Thin-film hybrid.

2
Temp Range
(oC)
-
-
0-70
0- 70
0. 70
-
-
-
0 to 70

Package Type D D D D D D D D D

0 to 70 D

0 to 70 D

-

-

0 to 75 -

-

-

-

-

Oto+75 -

0 to+75 -

-

D

0- 70

D

-

D

0 to 70 D

-

A

--

-

0 to+75 -

Oto+75 -

-

-

0 to+75 -

-

D

0-70

D

-

A

-

D, G

0 to 75 D, G

-

D, G

0,+75 D, G

-

D, G

0 to 75 D, G

·55 to 165 A, D

-55 to J65 A, D

-

A, F

-

A, F

-

A.F

-

A, F

-

A, F

-

A, F

-

A, F

-

A, F

-

A,F

-

A, F

-

A, F

-

A, F

-

D, G

0,+75 D, G

-

-

-

-

3
Remarks
Expandable Expandable Expandable Expandable Power gate Power gate
Differ in Temp & F.O. Differ in Temp & F.O.

186

ELECTRONIC DESIGN

TTL (continued)

Logic Function Type

D

3

Expandable

-
-
-
-
Dual Dual Dual Dual Dual Dual Dual Dual Dual Dual Dual 4-input 8-input Dual 4-input 8-input Dual 4-input 8-input Dual
-

Exclusive OR Dua I 4-i nput

4

Dual 4-input

Quad 2-input

Quad 2-i nput

Dual

Single 8-input

Maj. Voter

-

Gate Expanders E

Dual Dual Dual
Dual
Dual
Dual
Dual ·
Quad 2-i nput Quad 2-input Quad 2-input Quad 2-i nput Dual 4-input Dua I 4·input Dual 4·input Dual 4-input Quad 2-input Quad 2-input Dual 4-input Dua I 4- input Dual Quad Quad Quad Quad Dua I 4·i nput

Model

Logic

I
Mfr .

Propaga· ti an Delay
(ns)

Fan-in Typ. Max.

Fan-out Typ. Max.

Power Supply Diss. Voltage (mW) (Volts)

Levels (Volts)
" O" "1"

Noise
Margin (mV)

SG 120, 121 SY 12
SG 122,123
TNG3011 TR 15 TNG3013 TR 15 TNG3015 TR 15 TNG3017 TR 15 TNG3031 TR 15 TNG3lll TR 15 TNG3ll~ TR 15 TNG3115 TR 15 TNG3117 TR 15 TNG3131 TR 15 TNG32ll TR 15 TNG3213 TR 15 TNG3215 TR 15 TN G3217 TR 15 TNG3231 TR 15 TTµLl03 FA 25 TT11Ll04 FA 30
117103 PH 30 µ7104 PH 30 µ7105 PH 30 µ7106 PH 30
WM701 WH 45 WM704 WH 45

- - 6 20 15 -
- 8 - 20 15 5·6
- 8 - 7 15 5·6 - 6 - 20 15 5·6
- 6 - 7 15 5·6 - 4 - 7 15 5·6 - 4 - 20 15 5-6 - 4 - 7 15 5-6
-- 3 - 20 15 5-6 3 - 7 15 5-6
- 2 - 7 15 5-6 - 4 - 20 15 5-6
- 4 - 7 15 5-6
- 3 - 20 15 5-6 - 3 - 7 15 5-6 - 2 - 7 15 5-6 - 4 - 15 25 5.0 - 8 - 15 25 5.0
- 4 10 - 25 5 - 8 10 - 25 5
- 4 10 - 25 5 - 8 10 - 25 5
4 4 15 - - 5.0 8 8 15 - - 5.0

- - 1000

0.20 3.0 1000

0.20 3.0 1000

0.20 3.0 1000

0.20 3.0 1000

0.20 3.0 1000

0.20 3.0 1000

0.20 3.0 1000

0.20 3.0 1000

0.02 3.0 0.20 3.0

1io0o0o0

0.20 3.0 1000

0.20 3.0 1000

0.20 3.0 1000

0.20 3.0 1000

0.20 3.0 1000

0.33 4 750

0.33 4 750

0 3.0 500

0 3.0 500

0 3.0 500

0 3.0 500

0.30 2.7 550

0.30 2.7 500

z
Temp Range (oC)
-

Package Type
-

-
-
-
-
+10 to 60 -
-
-
+10 to 60 -
10 to 60 -
-
-
-
-

A, F A, F A, F A, F A A, F A, F A, F A, F A A, F A, F A, F A, F A A, C A, C -
-
-
-
D, F, G D, F, G

3
Remarks
Differ in Temp & F.0.

SG210,21 l SY 7 SG212, 213 SY 7
SG250,251 SY 7.5 SG252,253 SY 7.5 SE840 SIG 10 SG50,SG51,SY 12 SG52,SG53 SGl00,101 SY 12 SG102,103 SGllO,lll SY 12 SG112,ll3 SWG90 SW 14 SWG91 SW 14 SWG92 SW 14 SWG93 SW 14 SW5450 SW 15 SW7450 SW 15 SN5450 Tl 15
SN5451 Tl 15
SN7451 Tl 15
SN54966 Tl 15
SN74966 Tl 15

-
-

-
-

-

12 30 10 30 -

0.25 3.5 1000 -

D, G

0. 25 3.5 1000 0 to 75 D, G

- - - 12 43 - - - 10 43 - 4 - 10 14 +5 - - 6 20 15 -

0.25 3.5 1000
0.25 3.5 1000 0.4 2.4 1000 - - 1000

0, +75 -
-

D, G Expandable

D, G Expandable

F

-

Differ in

- - 6 20 15 - - - 1000 -

Temp & F.O.

-

Differ in

-
6 6

-
-

6 20
15 7 -

~.5~ 15
30 I

--
0.4 3

30 4.5-6 0.4 3

1000 -
- 1000
1000 -

-
-

6 - 12 - 30 4.5-6 0.45 3 900 0to+75 -

6 - 6 - 30 4.5-6 0.45 3 900 Oto+75 -

20 - 10 - 10 4.5-5.5 0.4 3 1000 -

-

20 - 10 - 10 4.8-5.3 0.45 3 900 0to+75 -

- - - 10 14/ 4.5 to - - 1000 -

D

Temp & F.O. Differ in Temp & F.O .
Expandable Expandable Expander

gate 5.5
- - - 10 14 4.5-5.5 - - 1000 -

Inputs D

gate

- - - 10 14/ 4.75- - - 1000 0 to 70 D

gate 5.25

- - - 10 14/ 4.5-5.5 - - 1000 -

D

gate

- - - 10 14/ 4.75- - - 1000 0 to 70 D

gate 5.25

SWG230 SW 2 SWG231 SW 2
SWG232 SW 2 SWG233 SW 2
SWG270 SW 2 SWG271 SW 2 SWG272 SW 2 SWG273 SW 2 SG230,231 SY 2 SG232, 233 SY 2 SG270, 271 SY 2
SG272,273 SY 2 SE806 SIG -
SWG150 SW SWG151 SW SWG152 SW SWG153 SW SWG170 SW -

8 - - - 28 4.5-6 - - 8 - - - 28 4.5-6 - - -

--

-
-

8

-

:....

-

28 4.5-6 -

-

-

0to +75 -

8 - - - 28 4.5-6 - - -
8 - - - 6.7 4.5-6 - - -

-Oto+75 -

8 - - - 6.7 4.5-6 - - -

-

-

8 - - - 6.7 4.5-6 - - -

0to+75 -

8 - - - 6.7 4.5-6 - - -

0 to+75 -

- - - 12 28 -

0.25 3.5 1000 -

D, G

- - - 10 28 -

0. 25 3. 5 1000 0 to 75 D, G

- - - - 15 6.7 -

--

12 6.7 -

0. 25 3.5 1000 -

D, G

0. 25 3.5 1000 0 to 75 D, G

- 4 - 4 5 +5 0.4 2.0 1000 -

F

10 - - - 5 4.5-6 - - -

-

-

10 - - - 5 4.5-6 - - -

-

-

10 - - - 5 4. 5-6 - - -

-

-

10 - - - 5 4.5-6 - - 8 - - - 5 4.5-6 - - -

--

-

1) See pages 4-9 for manufacturer's name. 2) -55 ° to +125 ° C unless otherwise indicated. 3) MC = Multiple Chip; TF = Thin-film hybrid.

May 17, 1966

187

TTL (continued)

I

Logic Function Type

Model

Logic

Propago·

ti on Delay

Fan·in

Fan-out

Power Supply Diss. Voltage

Levels (Volts)

Noise Margin

Mfr.1 (ns) Typ. Max. Typ. Max. (mW) (Volts) "O" "1" (mV)

2
Temp Range (O()

Package Type

3
Remarks

E

Dua I 4-i nput SWG171 SW -

8 - - - 5 4.5·6 - - -

-

-

Dua I 4-i nput

SWG172 SW -

8 - - - 5 4.5-6 - - -

Oto+75 -

Dual 4-input Dual 4-input
Dual 4-input Du<il 4-input

SWG173 SW -
- SWG180 SW -
SWG181 SW
SWG182 SW -

8 - - - 5 4.5-6 - - 8 - - - 1 4.5-6 - - 8 - - - 1 4.5-6 - - 8 - - - 1 4.5·6 - - -

Oto+75 -

--

-

Oto+75 -

Dual 4-input SWG183 SW -

8 - - - 1 4.5·6 - - -

Oto+75 -

Dua I 4·i nput SW5460 SW -

4 - - - 5 4.5-5.5 - - -

-

-

Dual 4-input SW7460 SW -

4 - - - 5 4.8-5.3 - - -

0 to+75 -

3-input Dual 3-input

SG170,l71 SY -
SG172,173 SG180, 181 SY -

- - - - 15 - - 6 20 15 -

- - 1000 - - 1000 -

-

Ditter in

Temp & F.O.

-

Differ in

·

SG182,183

Temp & F.O .

Dual 4-input

SN5460 Tl -

- - - 4 5/ exp 4.5 to - - 1000 -

D

5.5

Dual 4-input SN7460 Tl -

- - - 4 5/ exp 4.75- - - 1000 0to 70 D

5.25

-

TNG305 TR -

- 8 - - 5 5-6 0.20 3.0 1000 -

A, F

-

TNG3251 TR -

- 4 - - 5 5-6 0.2!1._ 3.0 1000 -

A, F

Inverters F
~

Quad 2-input SN5453 Tl 15

- - - 10 25 4.5-51 - - 1000 -

D

I

1) See pages 4-9 for manufacturer's name. 2) -55° to +125 ° C unless otherwise indicated. 3) MC = Multiple Chip; TF= Thin-film hybrid.

Who makes what in TTL

Manufacturer
Fairchild Motorola Philco Signetics Siliconix Stewart· Warner Sylvania Texas Instruments Transitron Westinghouse

Symbol · Adders

Binary Elements

Drivers/ Buffers

AND/OR/ NOT

FA

MO

·

PH

SIG

· ·

SI

SW

·

·

SY

·

·

·

Tl

·

·

·

·

TR

·

WH

Gates

NANO

NANO/ NOR

·

· ·
· ·
· ·
· ·

Exclusive· OR

Gate Expanders

· ·

·

·

· ·

· ·

·

Inverters
·

188

ELECTRONIC DESIGN

Amelco high-reliability silicon
______e_p_it_a_x_i_a_l_d__e_v_ic_e_s___f'A

May 17, 1966

MONOLITHIC LINEAR INTEGRATED CIRCUITS
These high· performance differential amplifiers, operational amplifiers and video amplifiers are the result of advanced planar diffusion techniques. Precise photo· etching and diffusion processes result in closely matched diffused resistors and small geometry transistors for high performance.

TRANSISTORS
Covering General Purpose, Small Signal Amplifiers and High Frequency types Amelco Transistors are of the passivated planar silicon diffused construction. Small Sigrial transistors provide excellent gain at low collector currents, and High Frequency devices benefit from precise control of small geometries.

HYBRID LINEAR INTEGRATED CIRCUITS
Characterized by high reliability and low cost engineering, these circuits utilize thin-film deposition on ceramic substrates for passive components and interconnections, and die attached active components. Standard circuits include analog gates amplifiers, multivibrators and counters, ·with a variety of custom circuits readily available.
MONOLITHIC INTEGRATED LOGIC CIRCUITS
Amelco digital circuits encompass Direct Coupled Transistor Logic (DCTL) and Transistor-Transistor Logic (T2L). DCTL, called OM IC for Optimized Micro-circuits, include transistors with dual collectors for improved perform ance. Available in 3 grades and over 14 circuits. T2L circuits are designed for high packaging density and low power dissipation to meet the requirements of airborne systems.

Fl ELD EFFECT TRANSISTORS
Amelco offers an extensive line of N channel silicon FET's, noted for high transconductance, low noise, low leakage and high reliability. These devices are made by passivated planar diffusion techniques and are specified in a wide range of Pinch -Off Voltage and other parameters. Avail able in metal cans or epoxy packages.
DIFFERENTIAL AMPLIFIERS
Amelco 'Diff Amps' consist of two silicon transistors in a single package. The transistors are matched to close tolerances for use in many critical applications. Both conventional and field effect transistors are used.

Amelco's superior reliability and performance are in large part due to proprietary methods of ultra -precision photomasking and mask alignment combined with total quality control over the entire production process. Prompt attention is given to all inquiries through the home office or through Amelco Field Sales Offices, Representatives, and Distributors throughout the free World.
AMELCO SEMICONDUCTOR
DIVISION OF TELEDYNE, INC. 1300 TERRA BELLA AVENUE · MOUNTAIN VIEW, CALIFORNIA
Mail Address: P. 0 . Box 1030, Mountain View, California Phone: ( 415) 968 -9241 I TWX: (415) 969 -9112 I Telex : 34-8416
ON READER-SERVICE CARD CIRCLE 59

189

4. Emitter-Coupled Logic

..
Adders A

Logic Function

Type

Half Half

Model
MC303 MC353

Blnary Elements B

Set-Reset J-K Set-Reset J-K JK

MC302 MC308 MC352 MC358 SW308

Ori~ers
c

Line & Capacity
Line & Capacity
-
-

MC3J5 MC365 MC304 MC354 SW304

Gates D

NOR 1

Dual 2-input
Dual 2-input
Dual
Dual Dual Dual

MC309 MC3JO MC31J MC359 MC360 MC361 SW309 SW3JO SW311 MC312 MC362 WS371

Propaga· ti an Delay
Mfr.1 (ns)

Fan-in Typ. Max.

Fan-out

Power Supply Diss. Voltage

Typ. Max · {m'({} (Volts)

Logic Levels (Volts)
"O" "1"

Moise Margin
(mV)

MO 6 MO 6
MO 10 MO JO MO JO MO JO SW 10
MO JO MO 10 MO -
MO SW -
MO 6

- - - 25 60 10 - - - 25 60 10

1.55 0.75 1.55 0.75 -

- - - 25 35 JO

1.55 0.75 -

- - - - 52 JO 1.55 0.75 -

- - - 25 35 JO 1.55 0.75 -

- - - - 52 JO 1.55 0.75 -

- - - 25 52 -5.2 -1.55 -0.75 -

3 25 - 25 - -5.2 1.55 0.75 -
3 25 - 25 - -5.2 1.55 0.75 -
- - 5 25 J8 JO - - -
- - 5 25 18 JO - - -
- - 5 25 J8 -5.2 - - -

- - - 26 49 JO

1.55 0.75 -

MO 6

- - - 26 49 JO 1.55 0.75 -

SW 6

- 2 - 26 49 -5.2 -1.5 -0.75 -

MO 6.5 MO 6.5 WH 10

- 3 - 25 68 5.2 -.75 -1.6 400 - 3 - 25 68 5.2 -.75 -1.6 400
4 4 25 - 220 -5.0 -1.6 -0.8 250

z Temp Range (oC)
0 to 75
-
-
0 to 75 Oto 75 -
0to 75 0 to 75
-
-
0 to 75
-
-
0to 75 0 to 75

Package Type
A, C A, C
A, C A, C A, C A, C A, C
A, C A, C A, C A, C A, C
A, C
A, C
A, C
A, C
cA, C

3
Remarks
Units differ in output configuration Units differ in output configuration Units differ in output configuration

OR / NOR Dual 2 Dual
-
-

SN7000 Tl 5

SN7001 Tl 5

SW30J SW306
SW307

SW 6 SW 6

- - - - 40/ +J.25- - - 250 0 to 70 D

4 load resistors

gate -3.5

- - - - 40/ +l.25- - - 250 0 to 70 D

2 load resistors

gate -3.5

- 5 - 26 35 -5.2 -1.55 -0.75 -

-

A, C

3 25 - 26 35 -5.2 - -1.55 -0.75 -

-

A, C Units differ

in output

configuration

OR/ NOR/ AND 5-input

NANO

3

3-input

5-input 3-input

MC30J
MC306 MC307 MC351 MC356 MC357

MO 6
MO 6
MO 6 MO 6

3 25 - 26 35 JO
3 25 - 26 35 JO
3 5 - 26 35 JO 3 25 - 26 35 JO

1.55 0.75 -
1.55 0.75 -
1.55 0.75 1.55 0.75 -

-

A, C

-

A, C

0 to 75 A, C 0 to 75 A, C

Gate Expanders E

-

MC305 MO 6

- - - - - JO - - -

-

A, C

-

MC355 MO 6

- - - - - JO - - -

0 to 75 A, C

-

SW305 SW 6

- - - - - -5.2 - - -

-

A, C

Level Translators
F l

DTL to CML

MC1511 MO -

- 1 - 25 25 -

-1.97 -0.75 400 -

A

CML to DTL MC15}2 MO -

- 25 - - 80 -

-0.75 2.951 -

-

A

1) See pages 4-9 for manufacturer's name. 2) -55° to +125°C unless otherwise indicated. 3) MC = Multiple Chip; TF = Thin-film hybrid.

190

ELECTRONIC DESIGN

Report from .
BELL LABORATORIES

Diagram illustrating formation of high-purity thin film at ordinary vacuum level: Cathode consists of reactive metal which, transferred to substrate, forms thin film. Anode is shaped into enclosing cylinder. Surrounding atmosphere consists of argon and unwanted contaminants. When 1500-volt potential is applied, ionized argon "sputters" metal from cathode. During sputtering, metal atoms "getter" the contaminants-Le., remove them from surroundings and hold them at the container walls. Then a protective shutter is swung aside (as shown here) and pure, uncontaminated metal travels from the cathode to the substrate to form the film.

. .

.

:

........

.. ·.. .

. ·.. .
.. ....... . ·.·.·.·:..· ... .. .

.. ..
··. .. .

.

· ·. ·· :: : BEING FORMED-.:,-.:->:·

. ._::::·.::=~°/-i-:: <i.).oN ~UBSTRATE: ::·: ··..·

High-purity thin films

H. C. Theuerer of Bell Laboratories prepares to place a thin-film substrate in getter sputtering equipment.

Very thin films of metal offer many opportunities for achieving small hi~h-performance, high-reliability electronic circuits. And the technology has now reached the point where numerous problems related to thin films are being solved.
One of these problems was contamination of the films during preparation. At ordinary levels of vacuum, enough contaminants remained .in the surrounding atmosphere to harm: the characteristics of the film. Yet establishing an ultrahigh vacuum is expensive and time-consuming.
A solution was found by H. C. Theuerer at Bell Telephone Laboratories. It consists of letting reactive metals do double duty. As shown in the drawing, the same metal that forms the film also removes the contaminants from the atmosphere. With the new process, known as "getter sputtering," film purities that formerly required a l0-12 Torr vacuum can now be achieved with 10-6 Torr equipment.

Iii\_ Bell Telephone Laboratories
~ Research and Development Unit of the Bell System

May 17, 1966

191

5. Resistor-Capacitor Transistor Logic

Logic Function

Type

Binary Elements A

Clock Driver B

Gates
c

NANO/ NOR

J-K R-S-T
-
Schmitt Trigg R·S FF/ Counter R-S FF/ Counter R-S R·S Ripple-Gou nter Ripple-Cou·nter
-
-
-
Dual 3-input Inverter 6 ·input 6 ·input

Dual 3- input Dual 2- input Triple 2·input

Multivibrators D

Triple 2·input
-
Exclusive OR Pulse Exclusive OR
One-Shot Medium Delay One-shot

Model

Logic

Propagati on Delay

Fan-in

Levels

Fan-out

Power Supply Diss . Voltage

{Volts)

Noise Margin

Mfr~ (ns) Typ. Max. Typ. Mox. (mW) (Volts) "O" "1" (mV)

2
Temp Range (OC)

FF7317E IN 8 FF8317E IN 8 TMC4000~ MEP 10 ST2514B IN 20 SN510B Tl 300
SN511B Tl 300

2 2 - 4 96 6 3 3 - 4 96 6

- 0.2 <6 1500
0.2 <6 1500 -

- - 5 5 48 -Hi, ·3 0 6 1000 -

1 1 - 6 145 12

- 0. 2 <12 2500

- - - 4 2@3V 3-6 - - 200 -

- - - 20 2@3V 3-6 - - 200 -

SN5101 B Tl 300 SN5lll Tl 300 SN5112 Tl 300 SN5113 Tl 300
USOlOOA SPR USOlOlA SPR -

- - - 4 2@3V 3-6 - - 200 -

- - - 20 3@3V 3-6 - - 200 -

- - - 16 3ca1 3V 3-6 - - 200 -

- - - 16 -4@4V 3-6 - - 200 -

- - - 4 2·7 3-6 2.5 0.3 -

-

- - - 20 2·7 3-6 2.5 0.3 -

-

SN517B Tl -

- - - 20 3@3V 3-6 - - 200 -

GG3317 IN 4

3 3 - 5 96 6

0.2 <6 1500 -

TMC40001 MEP 10

- 4 5 5 48 -t6, ·3 0 6 1000 -

TMC40004 MEP 10

-

SN512B Tl 65 @6V -

-
-

5
-

- 5 48 -Hi, -3 0 6

5 2@3V 3-6

-

500 200

-

SN513B Tl 65@6V - - - 25 3(aJ 3V 3-6 - - 200 -

SN514B Tl 65 @6V - - - 5 2@3V 3-6 - - 200 -

SN516B Tl 65@6V - - - 25 2@3V 3-6 - - 200 -

SN5161 B Tl 65@6V - - - 5 21 3-6 - - 200 -

gate

SN5162B Tl 65@6V - - - 25 21 3-6 - - 200 -

gate

US0102A SPR 100

- 6 - 5 2-7 3-6 2.5 0.3 -

-

US0103A SPR 100

- 6 - 25 2-7 3-6 2.5 0.3 -

-

SN515B Tl 100@6V - - - 5 3'-!l 3V 3-6 - - 200 -

SN5191 Tl -

- - - 5 6@3V 3-6 - - 200 -

TMC40002 MEP IO
DM3510B IN SN518 B Tl -

- - 5 5 48 -Hi, ·3 0 6 500 -

1 1 - 5 96 12

0. 2 <12 2500 -

- - - 5 2@3V 3-6 - - 200 -

Package Type
G G G G D D
D D D D -
-
D
G G G D D
D D D
D
-
D D
G G D

3
Remarks TF TF TFH TF With Emitter Fol lower Dual Presets Dual Preset
US0101A
TF
With Emitter Follower
Emitter Follower
TF

1) See pages 4 -9 for manufacturer's name. 2) -55° to +125 ° C unless otherwise indicated. 3) MC = Multiple Chip; TF= Thin -film hybrid.

192

ELECTRONIC DESIGN

Increase Production ... Lower Your Costs!

-walv

AH

AUTOMATIC ASSEMBLY and PRODUCTION MACHINES

TRANSISTORS:
· HEADER FORMING · CRYSTAL MOUNTING ·WELDING · EXHAUSTING ·SEALING
- and other production operations

KAHLE Engineers have the Experience and Facilities to Solve Your Production Problems I
Call or write KAHLE for recommendations on your specific electronic and related manufacturing operations. KAHLE Automatic assembly and production machines are in use by hundreds of leading manufacturers where they have earned an industry-wide reputation for b.igh efficiency and dependable performance I

3332 HUDSON AVE., UNION CITY, N. J. 07087
Telephone: UNion 7-6500 (Area Code 201)
EUROPEA S.p.A.- Via Spartaco, 16, Caravaggio (Bergamo), Italy

DESIGNERS AND BUILDERS OF AUTOMATIC ASSEMBLY AND PRODUCTION MACHINES FOR ELECTRONICS MANUFACTURING

May 17,. 1966

ON READER-SERVICE CARD CIRCLE 61

193

6. Complementary Transistor Logic

Logic Function

Type

Binoiy Elemen!A. Buffers B

Dual· rank
-

Gotes c

AND l

2, 2, 3 input Dual 4-input Single 8-input

NOR 2 -

Model

Logic

Propogo· ti on Deloy

I
Fon-in

Levels

Fon-out_

Power Diss.

Supply Voltage

(Volts)

Noise Margin

Mfr .' (ns) Typ. Mox. Typ. Mox. {mW) (Volts) "O" "1" {mV)

2
Temp
Range (oC)

CTµL951 FA 15-20 - - 15 - 150 4.5,·2 0.36 2.25 400 15 to55

CTµL956 FA 12

- - - 25 125 4.5,·2 0.36 2.25 400 15 to 55

CTµL953 FA 3 CTµL954 FA 3 CTµL955 FA 3

8 - 12 - - . 4.5,·2 0.36 2.25 400 15 to55

8 - 12 - - 4.5,·2 0.36

400 15 to55

8 - 12 - - 4.5,·2 0.36

400 15 to55

CTµL952 FA 9

- - 10 - 55 4.5,·2 0.36 2.25 400 15 to55

Package Type
G
G
G G G
G

3
Remarks

1) See pages 4-9 for manufacturer's name. 2) -55 ° to +125 ° C unless otherwise indicated. 3) MC = Multiple Chip; TF = Thin-film hybrid.

The Choice of the Discriminating
Communication Engineer ... the
Man who Never Settles for Anything Less than THE-VERY-BEST!
~ "BEAMED-POWER"
ANTENNAS and ANTENNA SYSTEMS
Provide optimum performance and reliability per element, per dollar. Antennas from 500 Kc to 1500 Mc. Free PL88 condensed data and pricing catalog, describes military and commercial antennas, systems, accessories, Towers, Masts, Rotators, "Baluns"
Irex~=~;~;. and transmission line data.

LABORATORIES
Asbury Park 41, New Jersey, U.S.A.

194

ON READER-SERVICE CARD CIRCLE 56

R. F. INTERFERENCE PLAGUING
YOU?
HOW ABOUT LITTELFUSE R.F. INTERFERENCE SHIELDED FUSE POSTS. MILITARY AND COMMERCIAL APPLICATIONS Write or phone for information
LITTELFUSE
DES PLA,.INES, ILLlNOlS
ON READER-SERVICE CARD CIRCLE 57
ELECTRONIC DESIGN

7. Miscellaneous Digital Circuits

Counter A

Logic Function

Type

BCD decade BCD decade

Diode Matrix
B
Level getector Level Shifter
D
Memory
E

-
Dua I 3-i nput Dual 3-input
-
-
16-bit
16-bit

MOS F
Pulse Source
G
Schmitt Trigger H
Shift Register
I

Adder

Dual-Full

Ana log Switch 4-channel

Converter BCD to Decimal

BCD to Binary

D to A

Counter

BCD Decade

Flip- Flop RST

J-K Flip Flop Dual

Multiplexer 6- Channel

5-Channel

4- Channel

4-Channel

4-Channel

4-Channel

3-Channel

3-Channel

NANO/ NOR Dual 4-input

NOR-Gate Dual 3-input

Shift Reg. 9-bit

9-bit
-

Shift Reg.

20-bit 21-bit

-
8-bit 8-bit

Steering Gate J

Utilogic
K

AND Gate
AND Gate NOR Gate NOR Gate NOR Gate OR Gate OR Gate Expander J-K Binary

-
Single Dual Single Dual Dual Dual Dual Dual Single

Model

Logic

Propaga·

Levels

ti on Delay

Fan-in

Fan-out

Power Supply (Volts) Diss. Voltage

Noise Margin

Mfr.' (ns) Typ. Max. Typ. Max. (mW) (Volts) "O" ''1" (mV)

SN5490 Tl tl2MHz - - - - 150 4.5-5.5 - - 1000 SN7490 Tl t12MHz - - - - 150 4.75to - - 1000
5.25

*

RAD t 10

- - - - 450 40

---

*Nine matrix sizes avail. from 5x5to15xl5 in RM-50,60,70 series.

MC1116 MO -

- - - - - 40(max) - - -

MC1117 MO -

- - - - - 40(max - - -

MCll 18 MO -

- - - - - 40(max - - -

MC217 MO -

-- - - --

4 .3 -

MC267 MO -

- -----

4 .3 -

WM208T WH 1MHz - - - - - 6

---

WS150Q WH -

- - - - 100 10, 6.4 0-1.5 2.5- -

-10, -64

9.0

SN5481 Tl Read:25 - - - - 150 4.5 -5. ~ - - 1000

Write:25

SN7481 Tl Read: 25 - - - - 150 4.75 to - - 1000

Write:25

5.25

MEMlOOO GI 500

- - - 5 25 -26,-12 -2 -10 lV

PL4S01 GME -

- - - - 150 -15-30-+ 10 0 1000

10

PL4G02 GME -

- - - - 100 -12, -24 -3 -9 1000

PL4G03 GME -

- - - - 50 -24 -3 -9 1000

PL4S02 GME -

- - - - 75 -12, -24 - 3 -9 1000

PL4C01 GME 2500 - - - - 75 -12, -24 -3 - 9 1000

MEM1005 GI 0-lMHz - - - 5 80 -28 -2 -10 lV

PL4M01 GME 2500

- - - - 100 -12, -24 -3

1000

MEM2001 GI -
- MEM2002 GI -
MEM2003 GI

- - - - - -30 - - - - - - - -30 - - - - - - - -30 - - -

MEM2004 GI MEM2004A GI MEM2005 GI -

- - - - - -30 - - -
- - - - - -30 - - -
- - - - - -30 - - -

MEM2006 GI MEM2007 GI -

- - - - - -30 - - -
- - - - - -30 - - -

PL4G01 GME 1000 - - - - 20 -12, -24 -3 -9 1000

MEM1002 GI 500

- - - 5 30 -26 -2 -10 lV

PL4R01 GME -

- - - - 75 -12, ·24 - 3 -9 1000

PL4R07 GME PL5200 GME -

- - - - 75 -12, ·24 -3

1000

- - - - - 2.5~ ~o -3 -9 1000

bit

MEM3020 GI 0-IMHz - - - 5 200 -26 -2 -10 IV

MEM302I GI 0-500MHz - - - 5 200 -28 -2 -10 IV

NM4002 NOR 25

- - - - 590 +20 0 +3 -

z Temp Range (o C)
0-70

Package Type
D D

-
-
-
0 to 75
-
-

D, G
A A A A, C A, C
A, C, D
c

-

D

0- 70

D, J

-55 to-H!5 F

-

G

-

G

-

G

-

G

-

G

-55 to +85 A

-

G

-55 to+85 F

-55 to+85 F

-55 to+85 G

-55 to+85 G

-55 to+85 G

-55 to+85 G

-55 to+85 G

-55 to+85 G

-

G

-55to+85 A

-

G

-

G

-

A

-55 to+85 A -55 to +85 A

-

A, B

NC/ PC17 GI 8

- 1 - 5 200 I2, 4.2, 0 5 -

-

A, E

-3

SN5491 Tl tl5MHz - - - - 190 4.5-5.5 - - 1000 -

D

SN7491 Tl t 15 MHz - - - - I90 4.75 to ~ - 1000 0- 70

D

5.25

NC/ PC9 GI -

-- -- - -

---

-

A, E

SU305
SU306 SU314 SU315 SU316 SU331 SU332 SU300 SU320

SIG 15
SIG 15 SIG 20 SIG 20 SIG 20 SIG 20 SIG 20
SIG -
SIG 65

- 6 - 10 5 +4.5 - - - -20,-H!5 A, C

- 3 - 10 5 +4.5 - - - -20, +85 A, C

- 7 - 17 18 +4.5 0.6 3.3 1200 -20, +85 A, C - 3 - 17 18 +4.5 0.6 3.3 1200 - 20, +85 A, C

- 2 - 17 18 +4.5 0.6 3.3 I200 -20, +85 A, C

- 2 - 17 36 +4.5 0.6 3.3 1200 - 20,+85 A, C

- 3 - 17 36 +4.5 0.6 3.3 1200 -20,+ 85 A, C

- - - - 5 +4.5 - - -

-20, +85 A, C

- - - 17 90 +4.5 0.6 3.3 1200 -20, +85 A, C

3
Remarks t Count freq . t Count freq. t Reverse Recovery Time
-24v clock
Apollo precore dri ver MC RCT t Shift freq . t Shift freq . MC RCDT

1) See pages 4-9 for manufacturer's name. 2) - 55 ° to + 125 ° C unless otherwise indicated. 3) MC = Multiple Chip; TF = Thin-film hybrid.

May 17, 1966

195

8. Linear Circuits

Function

Model Mfr.'

Frequency Range

Amplifier Demodulator MCM602 KE DC-2 kHz A

Analog switch
B
Audio Amp.
c

El6-501
45P912 4JP913 PC402 PC401 NM2017
I8A5M02CIO!
WC183G

AL Ton <500 ns Toft <600 ns
GE 100 MHz GE 100 MHz GI 200 kHz GI 200 kHz NOR 200 kHz
AMP dc-20 KHz VAR 10 Hz-100 KHz WH .5·-10 KHz

Bit Driver 0

] WS151 WH Ton= 100 ns Toft = 350 ns

Broadband Amp. E

4JP108 GE PA7600 PH SE501 SIG
WM1146Q WH

6 MHz 0-200 MHz 40 MHz
de -100 MHz

D'A Switch F

4JP380 GE 250 MHi

Demodulator ChopperG NM2024 NOR 5 kHz

Differential Amp.
H

013-000 AL 400 kHz 013-001 AL 400 kHz 013-002 AL 400 kHz µA7ll FA 40 ns PC200 GI 0-20 kHz PC201 GI 0-20 kHz TMC40005 MEP 100 kHz MC1519 MO l MHz MC1525 MO 1400 kHz MC1526 MO 500 kHz MC1527 MO 1400 kHz MC1528 MO 300 kHz
NM1005 NOR 300 kHz NMiOOG NOR 1 MHz NM1021 NOR 1 MHz SE505 SIG 1000 kHz

203 SN523A SN525A SN723 SN5510 WS115 WS123 WS141G WS142 WS143G
WS144 WS153

SSD 500 kHz Tl dc-3 MHz Tl dc-1 MHz Tl dc-3 MHz Tl dc-300 MHz WH 0-150 kHz WH 0-lOOkHz WH 0-50 kHz WH 0-100 kHz WH 0-50 kHz WH 0-100 kHz WH Ton = 150 ns
Toff=l50 ns

Differential Comparator µA710

I

µA710C µA7llC

NM1037

PA710

FA 40 ns FA 40 ns FA 40 ns
NOR 100 kHz PH 40 ns

SE560 SIG 10 MHz

Driver Switch J

NM1038 NOR 50 kHz

Emitter Coupled K MClllO MO DC - 300

General Purpose Amp. L

12X207 GE 10-100 kHz

12X218 GE 10-100 kHz

4JPA113 GE 100 kHz

l 4JP114 GE 1 MHz

MCM601 NM1032

KNEOR

3-100 kHz de - 190 kHz

Input (Volts)

Gain Output

(db) (mW)

or

or

*(Volts) "'(Volts)

Input Impedance
(ohms)

-

*2.6 - 35 k ±10%

Output Impedance
(ohms)
4300 ± 10%

±5

t40

0.0006 -

0.0006 -

3

-

3

-

5 -

-

80

0-20 46

-

94

-

-

--

-

--

-

--

-

-

10 k/ 3.9 k -

-

10 k/ 3.9 k -

- 10 k

-

.002 -

-

10 10 k

1000

45 40 k

-

-

5 k

-

-
-
-
26
-
t l mV ±0.040 ±5 ±5 ±5 ±5 ±5 t2mV tBmV t4mV
-
±3 ±5 ±5 ±5 ±4
-
-
-

*20 - 50

l

t43 2. 5 -

-

28

- 1.3 k

-

16

--

-

-

--

20

-

--

-

45

6-V 20 k

5 k

45

6 v 10 k

5.5 k

45

5v 5k

5.5 k

63

*+4.5,-0.5

200

73

-

100 k Diff. 200

73

- 200 k Diff. 200

20

- 2M

l k

73 / 45 t -

2.6 k/ l.2 kt 2.7 k/ 48 t

140 65

--

2 k 60 k

11 k 11 k

140 65

--

2 k 80 k

11 k 11 k

75

*16 3. 2 k

100

66

*8 250 k

100

60

*6 1.5 M

5 k

*1500 - 4k

-

Open Loop

40 I 150 75,000

300

66

4 10 k

10 k

88

4 100 k

10 k

64

4 10 k

10 k

40

0.4 3.5 k

35

34

- lM

8 k

50

-

150 k

0.5 k

43

- 50 k

-

43

- 20 k

-

60

- 10 k

-

63

18 2 k

-

hfe = 500 - -

-

t2 mV 63

*+3.2,-0.5

200

t2 mV 63

*+3.2,-0.5

200

tlmV 63

*+4.5,-0.5

200

±10 *1000 *6 -

3 k

t2mV 64

* +3.~ -

200

-

--0.5

*1700

-

-

Open Loop

±10 -

- 11 k

-

0.114 26

10 2 k

5 k

0.0001 *600 -

10 k

l M

-

-

- 50 M

250

-

85

50 20 k

50

-

t3,000 45 1.5

10

-

26

0.8 4M

500

-

45

- 34 k

2 k

1) See pages 4-9 for manufacturer's names. 2) MC = Multiple Chip; TF= Thin-film hybrid.

Supply Voltage (Volts)
tl5VDC
±12 voe
40
20 20 +45, +28 +45, +28 10
5 10 to 20 4.5
10

Noise Figure
(db) or *(Volts)

Package Type

-

G

-

A

-

A

-

A

-

E

-

E

-

D

6

G

10

-

*3

D

-

c

2
Remarks
thFE

15

-

A

6

5

A

-jMHz Video Bandwidth

6.0

4 dB

A, C

12

4

c

5

-

A

28

-

D

± 12

-

A,C

±12

-

A,C

± 12

-

+12,-6 -

A,C

A

dual input toffsetvoltage

±2 to ±22 5µV

E

±6 to ±22 5µV

F

±12

-

±14 ±14 ±14
±14 ±14

-----

F

A

tCE!CC

A

A

Darington (npn)

A

(pnp)

A

Darlington (pnp)

+12, -6 *2. 5 mV A, D tOffset Voltage

10

*2mV

- +12, / 25 -
+6,-3

D

tOffset Voltage

-

totfset Voltage

A, C

25

2 µV*

±12 ±12 ±12 ±6

----

12, -6 -

12, -6 -

-12, 6 -

6, -12 -

-12, 12, 6 -

6, 12, -12 -

20

-

c

A, D

D

A, D

D

D

D

D

D

D

c D

Dual Darlington

+12,-6 -
+12,-6 -
- +12,-6 -
30
+12-6 -

-

-

A,C A, C A A A, C
A, c

t offset voltage t offset voltage dual input toffsetvoltage Min -Max Limit Detector tOffset

- 34, 6, -6

D

±12

6

A

30

10 mv rms A

25

B

E

15

-

A

6

-

A

+15 voe -

-

6, -12 -

D

tCurrent gain

196

ELECTRONIC DESIGN

Linear Circuits (continued)

Function
l
Limiter M Mixer Osc. N Operational Amp.
0 I
Phase Splitter Amp. p
Power Amp. Q

Model Mfr.1

Frequency Range

NM1033 NOR de - 190 kHz UC1501A SPR 3 - 250 kHz
UC1503A SPR 200 Hz - 3 MHz UC1505A SPR 30 Hz - 11 MHz UC1507A SPR 10 Hz - 10 MHz PA7602 PH 0-100 Hz
WM108 WH 0-lOOkHz

UC1508A SPR 50 Hz - 12 kHz

WM1102 WH 30 MHz

Al3-251 AL 10 MHz µA702A FA dc-30MHz µA702C FA dc-30 MHz
µA709 FA dc-500 kHz µA709C FA dc-500 kHz
4JPA107 GE 200 kHz 4JPA135 GE 200 kHz TMC40006 MEP 100 kHz MC1530 MO 1.2 MHz
MC1531 MO 400 kHz PA702A/ PH 0.8 MHz
712 PA7026 PH 0-8MHz Q25AH PR 0-2 kHz Q85AH PR 0-2000 kHz SE506 SIG 300 kHz

SN521A Tl de - 50 kHz SN522A Tl de - 50 kHz SN524A Tl dc-3 MHz SN526A Tl dc-1 MHz SN724 Tl dc-3 MHz
WS161Q WH 500 kHz PL-210 GI l.5MHz PL-212 GI 1.2MHz PL-250 GI 30KHz PL-251 GI 30~~z

UC1502A SPR 3 - 250 kHz UC1504A SPR 200 Hz - 3 MHz UC1506A SPR 30 Hz - 11 MHz

MCM611 MC1524 NM1003 NM1008 WS140y
WS1454

KE de - 4 kHz MO 300 kHz NOR de - 20 kHz NOR de - 20 kHz WH Ton < 0.45 µsec
Toft < 1.8 µsec WH Ton<0.45 µsec
Toft < 1.8 µsec

Input (Volts)
-
-
-
--
-

Gain Output

(db) (mW)

or

or

*(Volts) ivalts)

66

-

84

500

60

600

40

600

34

600

76

*6

t20,000 -

Input lmpedonce
(ohms)
3.4 k 2 k 20 k 47 k 47 k t >25 k 10 M

Output Impedance
(ohms)
2 k 150 150 150 150 t<50
-

2

40

16 40 k

15

-

10

- 100

200

-

86

10 v 250 k

1 k

tts2mmVV

68 68

*±53 25 k *±5.3 20 k

200 200

ti mV 93

±14 400 k

150

t2 mV 93

±14 250 k

150

-

70

±10 750 k

-

70

*±4 1 M

100 100

-

60

- 100 k

5 k

±5

74

10 10 k

25

±5

71

10 1 M

25

t2 mV 68

· ±5.3 25 k

200

t7 mV ±10 ±11
-
±4 ±4 ±5 ±5 ±5 tIO ±8 ±8 ±20 ±20
-
-
-
±5 0-60 0-60
-
-

68

*±5. 3 20 k

86 -116 24 10 12

- 86 -116 24
*13,000

10' 200 k

Open Loop

62

-

12 k - 100 k

62

-

12 k- 100 k

60

4 1M

88

70 1000 k

54

4 750 k

*2000 - 300 k

70

±15V 30k

64

±lOV lOOk

50

- JOI''

50

- JOM

84

160 2 k

58

230 20 k

39

230 20 k

-

5000 -

I *10/20/401000 8.5 k

54

8000 10 k

46

8000 10 k

hfe > 1000- -

I
hfe > 1000- -

200 100 k 100 k
-
10 k 160 75 12 k 75 40 50 50 150 150
100 100 100
2 0.58 500 300
-
-

Supply Voltage (Volts)
12, 6, -12 15 15 15 15 12 12

Noise Figure
(db) or *(Volts)
-
-
-

Package Type
D -
-
-
c A

2
Remarks
tGain of 40dB tgm

15

-

-

12

-

c

± 12

-

+12,-6 -

+12,-6 -

±15

-

±15

-

±12 ±6

--

±12

-

±9 ±9 12 -6, 6-3

---

12-6

-

±15

0.5

- ±15

2

+15,-15

A

A,C f offset voltage

A, C t offset voltage

A

t offset voltage

A

t offset voltage

A

A

G

A

A

Darlington Input

A, C tOffset Voltage

A, C tOffset Voltage

G

FE Ts

G

A, C

10, 6, ·9 -

10, 6, ·9 -

±12

-

±12 ±12 12

---

±18

4µ.V

±12

4µV

±12

-

±12

-

D

D

Emitter follower

A, D

D

A, D

c

tOffset voltage

E

E

E

E

Short-circuit proof

15

-

-

15

-

-

15

-

-

±15

-

±12 36 36

---

40

-

-

A

G

Modified To-53

G

Modified To-53

stud

70

-

stud

Pulse Amp.
R
RF /IF Amp.
s

UC1509A SPR UC1510A SPR 12X264 GE 10 MHz
PA7602 PH 10-200 MHz PA713 PH 0-200 MHz
WMllOl WH 0-3 MHz

5

22

6.7

0

-

25

- 20 k - 40 k
--

--

18

l

90

- t33

450

-

30@ - 100

60 MHz

100, 10

15

-

100, 10

15

-

-

15

-

95

±6

-

900

6

7

200

12

5

-
A
A
A-C f 12 MHz Video
Bandwidth -

Read Amp. T

WS934 WH 0-1 MH~

-

*4-32 V/V- 180

100

Sense Amp.
u
v Summing Amp.

NM2012 NOR 0-1 MHz NM2016 NOR 0-1 MHz

SE500 SIG SE504 SIG
SAlO SAl SY SN5500 Tl SN7500 Tl

0-3 MHz 3000 kHz 7 MHz tl25 ns tl25 ns

4JP116 GE 100 MHz

tl mV 49 t4 mV 54

- *4 -
*4

,...
-

-

31

--

-

-

30

--

-

17 mV -

6

-

6

-

---

240
-
-

-
-

-

1 x 10' - 1

1

Video Amp.
w

El3-511 AL 50 MHz

0.26 22

- 520

520

NC/ PClO1 GI 40 MHz

0.2

20

4.5 1 k

500

SA20 SY up to 100 MHz

-

45

- 2.6 k

>5

WS112y WH 0-5 MHz

-

25

- 1k

1 k

WM1106 WH 0-6 MHz

-

20

- 100

1.3 k

WMlll6 WH 0-8 MHz

-

20

- 100

1.3 k

WM1126 WH 0-10 MHz

-

20

- 100

1.3 k

WM1136 WH 0-12 MHz

-

20

- 100

1.3 k

WMl146 WH 0-35 MHz

-

20

-

100

2 k

1) See pages 4-9 for manufacturer's names. 2) MC= Multiple Chip; T~= Thin-film hybrid.

±9

4

13

-

30

-

+13,+4,+l.5-

13

I-

-25, 12, +5 -

±6

-

±6

-

±25

-

+12

-

6

3

24

15

12

6

12

-

12

-

12

-

12

-

12

4

D

A, D A, D
A, C A, C D, G A, D D

tOffset Voltage tOffset Voltage Temp. Compensated
Digital Output 0-5V t Prop. delay tProp. delay

A

A A, E A
Ac, C, F, G c c c c
-

May 17, 1966

197 -

Linear Circuits (continued)

function
Voltage Regulators
x

Model Mfr. 1
PC501 GI PC502 GI PC503 GI PC504 GI NC/ PC511 GI PC512 I GI
I NC/ PC51 3 GI
PC514 GI PL-521 GI PL-523 GI
j NCS-675A GI
NM1004 NOR

Frequency
1
. Range
100 kHz 100 kHz 100 kHz 100 kHz 100 kHz 100 kHz 100 kHz 100 kHz lOOKHz
-
-

Jn put (Volts)

Gain Output

(db) (mW)

or

or

*(Volts) *(Volts)

Input Impedance
(ohms)

+16to-t24 -

-16 to -24 -

+28 to +36 -

-28 to -36 -

+15 to +2~

+27 to +36 -

-15 to-24 -

-27 to -36 -

+2 8 -28
+28

,_--

>20, >30

150mA -

150mA -

140mA -

140 mA -

150mA -

140mA -

150mA -

140mA -

+-66vV

-
-

+5V

-

tl.25mA -

1) See pages 4 -9 for manufacturer's names. 2) MC = Multiple Chip; TF= Thin-film hybrid.

Output lmpedonce
(ohms)
0. 2 0.2 0.4 0. 4 0. 1 0.2 0.1 0. 2 0.05 0.05 0.1
-

Supply Voltoge (Volts)
+12 -12 +24 -24 , 12 +24 -12 -24
-
-
715

Noise
Figure (db) or
*(Volts)

Package Type

2
Remarks

0.4 mV 0.4 mV 1 mV 1 mV 0.4 mV 1 mV 0.4 mV 1 mV
-
-
1 mV

E
E E E A or E E A or E
E
E E A

lmax=200 mA lmax =200 mA
lmax =200mA t Drive Current

MASKS

integrated circuitry thin film devic~s semiconductors

High resolution photo em~lsion.
EVAPORATION MASKS
Electroformed nickel. Etched molybdenum and stainless steel. Bi metal (electroformed nickel and copper).

y TQWNE LABORATORIES, INC. Somervil.le, N. J. ·Tel. 201- 722-9500

198

ON READER-SERVICE OARD CIRCLE 62

YOUR
SHORTEST ROUTE

to what's new in Semiconductor Coolers
WAKEFIELD DISTRIBUTOR PRODUCTS CATALOG

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139 FOUNDRY ST. I WAKEFIELD , MASS . (617} 245 · 5900 · TWX 617 ·245 -9213

ON READER-SERVICE CARD CIRCLE 63
ELECTRONIC DESIGN

A NE"W integrated-circuit, core ·memory system from FABRl.;.TEK

· " ---

Here is a compact, versatile memory system at a truly economical price which can perform any of the standard data storage functions with reliability. Full cycle time is 2 microseconds, half-cycle time is 1.25 microseconds. Access time is 850 nanoseconds. Four access modes are possible: Random; Sequential; Random/Sequential; and Sequential-interlaced. Capacities available are: 64, 128, 256, 512, 1024, 2048, and 4096 words, with 2 to 30 bits per word in increments of 2 bits. A choice of input and output interface circuits and optional address register is offered. Power supply and selftest exerciser are available options. Fabri-Tek's "standardized design.. concept gives you a

custom fit to your particular memory requirements with the economy of mass production.
T~is new memory system from Fabri-Tek can be ordered out of a catalog. You choose the features by the number and your system will be delivered, ready to plug into your equipment rack. A connector wiring diagram of your specific system will be sent to you before delivery of the memory system so you '11 be ready to operate without waste of time.
Ask for Bulletin 6535, Series MUA2 Integratedcircuit core memory system. Write, call, or wke: Fabri-Tek, Incorporated, Amery, Wisconsin; phone 715-268-7155; TWX 510-378-1710.

FABRl-TEK LEADS IN MEMORY TECHNOLOGY
Check with Fabri· Tek for rewarding eng;neering opportunities!

May 17, 1966

ON READER-SERVICE CARD CIRCLE 64

199

Index of microelectronic devices

NUMERICAL

4JP

BE

4JP114

BL

4JP116

BV

4JP3BO

BF

4JP912

B8

4JP913

B8

4JPA107

BO

4JPA113

BL

4JPA135

BO

12X207

BL

12X21B

BL

12X264

BS

203

BH

B200

18

B20l

lH

B202

lH

B203

11

B204

1E5

8207

lEl

B20B

lEl

B209

lEl

B210

lEl

B213

1D

B214

1E3

B502

BC

-A-

AOl A02 A03 A04 A05
A06 A07 A08 A09 AlO
All A12 A13 A13 -251 A14
A15 A16 A17 A20 A41
A42 A43 A44 A45 A46
A47 A48 A49

1E4 1E4
18 lF 1E4
1E4 1E4
11 18 1E4, 2E2
2A, _2E2 1E4
1E4, 28
BO
1E4, 2E2
1E4 , 2H 28 28 1D 1E4
1E4 18 lF
1E4 1E4
1E4 11 18

200

A50 A51
A52 A53 A54 A55 A60 AMC101
-B-
801 802 811004 8C1100l
-C-
C11001 C11004 CS700 CS701 CS704
CS705 CS709 CS715 CS716 CS720
CS721 CS727 CS729 CS730 CS731
CS732 CTµ,L952 CT µ, L953 CTµ, L 9 5 4 CTµ, L955
CTµ,L956 CTµ, L957
-D-
013-000 013-001 013-002 OM35108 OT µ, L930 OT µ, L931 OTµ, L932 OTµ, L933 OT µ, L 9 4 4 OT µ, L945
OTµ, L 9 4 6 OTµ,L948 OTµ, L950 OTµ, L951 OT,u l 9 6 2

1E4 lA
1E4 1E4 1E4 1E4
1D
BC
303 303
2C 2C
20 20 1E4 1E4 18 lEl lF 1D 1E4 1E4 1E4 1E4 18 1E4 lF lF 6C2 6Cl 6Cl 6Cl 68 6A
SH SH SH 50 1E4 18 1D lF 1E6 18 1E4 18 18
11 1E4

-E-
El 1001 E11004 E13-511 E16 -501
-F-
FF15148 FF7317E FFB317E Fµ,L90029 Fµ,L90329 FµL90529 Fµ, L91029 Fµ, L91129 Fµ,L91429 Fµ,L91529 Fµ, L92129 Fµ, L92329
-G-
GllOOl G11004 GG15148 GG3317
-H-
HllOOl H11004
-J-
JllOOl J11004
-K-
K11001 K11004
-L-
Ll 1001 Ll 1004
-M-
MllOOl M11004 MC201 MC202 MC203 MC204 MC205 MC206

MC207

MC20B

2F

MC209

2F

MC212

BW MC213

B8

MC215

MC217

MC251

28 5A 5A 2C 2El
21 2El 2El 2El 2El
2F 28

MC252 MC253 MC254 MC255
MC256 MC257 MC25B MC259 MC260
MC262 MC263 MC265 MC267

MC2B1G

MC2B2G

2El 2El 2El
5C

MC2B4G MC301 MC302 MC303

MC304

MC305

MC306

2A

MC307

2A

MC308

MC309

MC310

MC311

2El

MC312

2El

MC315

MC351

MC352

2El 2El

MC353 MC354 MC355

MC356

MC357

2El

MC358

2El

MC359

MC360

MC361

MC362

2El

MC365

2El

MC650G

1E4

MC651F

1E4

MC652

lEl

MC700G

1E6 · MC701G

10

MC702G

1E4

MC7-03G

1E4 1E4
18 1E4 1E4 lEl
78
1E4 1E4 lEl 1E4
1D
1E4 1E4 1E4
18 18
1E4 1E4 lEl 78 1E4
18 1E4 403 48
4A
4C 4E 403 403 48
401 401 401 401
4C
403 48 4A 4C 4E
403 403
48 401 401
401 401
4C 1E4 1E4
38 2C 20 28 2El

ELECTRONIC DESIGN

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Complete stock maintained to provide samples and quick delivery.

mea~ures leakage IN-CIRCUIT ·of transistors, diodes, F. E.T.'s ·.. any semiconductor device
ALSO MEASURES .·· · Low and high power transistors for 1000 cycle
Beta within range 1 to 1000. · F. E.T. transconductance to 10,000 micromhos. · Resistance across semiconductor electrodes.
FEATURES ··· · Battery operated. · Rugged, drip-proof, high impact plastic case and
cover.
OPTIONAL FEATURES and EQUIPMENT · Automatic Beta calibration - sets collector cur-
rent of transistor under test at 1 ma. · One hand operated in -circuit test probe.
WRITE FOR TECHNICAL CATALOG
For Fast, Off-The·Shelf Delivery, Call DISTRIBUTORS Electronic Wholesalers· Washington , D. C. · (202) 483-5200 Allied Radio · Chicago, Ill. · (312) 421 -6800 Radio Electric Service Co. · Phila., Pa. · (215) 348-3010
STOCKING REPRESENTATIVES Bonn Assoc. · Metuchen, N. J. · (201) 549-9573 NBS, Inc. · Orlando, Fla. · (305) 423-4856 Lightstone Corp. · Syracuse, N. Y. · (315) 454-3209

® th·: B~C~~E st~mping co.
555 MARION RD., COLUMBUS, O. 43207.
"QUALITY PRODUCTS SINCE 1902"
ON READER-SERVICE CARD CIRCLE 66
May 17, 1966

~merlcan E1ectronlc Laboratories, Inc. P. 0. BOX 552 , LANSDALE, PA. 19446 · (215) 822-2929

ON READER-SERVICE CARD CIRCLE 67 .

201

@ Important Books on Electronics
INTRODUCTION TO LASER PHYSICS By BELA A. L~NGYEL. Includes material on solid:.state, fluid-state and gas lasers, variation of laser oscillations in space and time, and laser applications, with background on radiation, atomic physics and the theory of lasers. 1966. 311 pages. $8.95

NETWORK ANALYSIS AND SYNTHESIS
Second Edition. By F. R. Kuo. Cov-
ers modern network analysis and synthesis in a single unit. Includes new material on computer techniques in circuit design, Fourier
series and Fourier integral, and approximation. 1~66. 515 pages. $11.95

MODERN CERAMICS:
Some Principles and Concepts. Edited by J. E. HOVE and W. C. RILEY. Reviews scientific and engineering principles and concepts w.hich have led to the development of modern ceramic technology. Selected
examples of exciting new classes of ceramics are described. 1965. 409
pages. $14.50

ELECTRONICS
By R. H. MATTSON. Provides the basic tools for effective circuit design. 1966. 620 pages. $12.95

RECENT ADVANCES IN OPTIMIZATION TECHNIQUES
Edited by A. LAVI and T. P. VOGL. Comprises the papers presented at a symposium held in Pittsburgh in April, 1965. 1966. 656 pages. Prob.
$12.50

THIN FILM MICROELECTRONICS:
The Preparation and Properties of Components and Circuit Arrays. Edited by L. HOLLAND. 1966. 284 pages. $9.00

SEMI-CONDUCTORS
By D. A. WRIGHT. Third Edition. A Methuen Monograph ori Physical Subjects. 1966. $3.25. In press.

FERROMAGNETISM AND FERROMAGNETIC DOMAINS By D. ·J. CRAIK and R. S. TEBBLE. A · North-Holland (Interscience) publication in the Wohlfarth series. 1965. 337 pages. $14.00
Available from your bookseller, or
JOHN WILEY & SONS, INC.
605 THIRD AVENUE
NEW YORK, N.Y. 10016

202

ON READER-SERVICE CARD CIRCLE 68

MC704G MC705G MC706G MC707G MC70SG
MC70"9G MC710G MC7UG MC712G MC714G
MC715G MC71SG MC720G MC721G MC723G
MC726G MC727G MCSOOG MCSOlG MCS02G
MCS03G MCS04G MCS05_G MCS06G MCS07G
MCS13G MCS14G MCS15G MCS16G MCS26G
MCS27G MCS30 MCS31 MCS32 MCS33
MCS44 MC845 MCS46 MC848 MCS62
MC900G MC901G MC902G MC903G MC904G
MC905G MC906G MC907G MC908G MC909G
MC910G MC911G MC912G MC913G MC914G
MC915G MC916G MC918G MC920G MC921G
MC926G MC927G MC930 MC931 MC932
MC933 MC944 MC945 MC946 MC94S
MC962 MCl 110 MCllll MC1112 MCl 113
MC1114

2A MCll 15

lG

21 MCll 16

78

21 MC1117

78

2El MClllS

78

2A MC1511

4F

2C MC1512

4F

2El MC1519

SH

2El MC1524

SQ

2A MC1525

SH

2El MC1526

SH

2El MC1527

SH

2El MC152S 28 MC1530 2F MC1531

SssHoo

28 MCM601

SL

28 MCM602

SA

2G MCM611

SQ

2C MEMlOOO

7F

20 MEM1002

7F

28 MEM1005

7F

2El 2A
21 21

MEM2001 MEM2002 MEM2003 MEM2004

7F 7F 7F
7F

(

2El MEM2004A

7F

28 2El 2El
28

MEM2005 MEM2006 MEM2007
MEM3020

7F 7F 7F 7F

28 MEM3021

7F

2G 1E4
18 lD

MWµL90S MWµ L909 MWµ.L910 MWµL911

2A 2C 2El 2El

lF MWµL912

2A

1E6 18 1E4 18

MWµL913 MWµL921 µ7095 µ7103

1E4 µ7104

2C 20 28 2El

µ7105 µ7106 µA702A
µ,A702C

2A
21 21 2El 2A 2C
2El 2El
2A 28

µA709 µA709C µA710 µ.A710C µA711
µA711C µ L900 µL902 µL903 µ L904

2El
2El 28 2El 28 2F

µ L9b5 µL906 µL907 µL914 µL915
µ L916

28 µL927

28 2F 2E2 303
303 303
3s0soo3 s8o0
81 81 SH
SI 2C 28 2El 2A
21 21 2E2 2El 2El
28 1E4

2G 1E4

-N-

1B 10

N81000 N81001

2C 20

lF N81002

28

1E6 N81003

2E2

18 N81004

2A

1E4 18

N81005 N81007

21 2E2

1E4 N81014

2E2

SK N81015

2E2

lEl NC-10

1E5

lEl 1El

NC-11 NC / PCS

1E3 18

lEl NC/PC9

7J

ELECTRONIC DESIGN

NC/ PC12 NC/ PC16 NC/ PC17 NC/ PC19 NC/ PClOl NC / PC511 NC / PC513 N01002 N01003 N01006 NMJ.003 NM1004 NM1005 NM1006 NMlOOB NM1021 NM1032 NM1033 NM1037 NM103B NM2012 NM2016 NM2017 NM2024 NM4002
-P-
PllOOl Pl 1004 PA702A/ 712 PA710 P.A713 PA7026 PA7600 PA7602 PA7602 PC-10 PC-11 PC-13 PC-14 PC-15 PC-lB PC200 PC201 PC210 PC212 PC250 :PC251 PC401 'PC402 ··pcso1 PC502 PC503 PC504 . PC512 PC514 PC521 PC523 PC675A pl4C01 pL4G01 . pl4G02 pl4G03 pl4M01 pl4R01 pl4R02 pl4S01 pl4S02 pl5200 PL900 PL901 PL902 PL903 PL904 PL905 PL906
May 17, 1966

18
11 7H 18 BW BX BX 10 18 1E6 . BBQX
BH BH BQ BH BL BL Bl BJ BU BU BB BG 7G
21 21
80
Bl BS BO BE BL BS 1E5 1E3. 18 1E5 1E3
. 11
BH BH BO BO 80 BO 88 B8 BX BX BX BX BX BX BX BX BX 7F 7F 7F 7F 7F 7F 7F 7F 7F 7F 2C 20 28 2El .22A1 21

~Ll/2 "RUTAR

SWITCHES~: .

ESTABLISHING ANEW SET

~-

OF PERFORMANCE STANDARDS!

· Up fo 12 positions pe.r deck with stops.
· As many as 6 poles per deck. · Shorting and non-shorting poles may be
grouped on one deck in any combination.
· All individual deck parts are self-contained, and are permanently molded into place.
· Wiring to switches possible "in the flat". · Easily assembled and disassembled
with µJtnaEa.6J-! construction~

110ff-The-Shelf11 Delivery

ON READER-SERVICE CARD CIRCLE 69

You name the shape, we have it-or we'll make it for you:
For everything in meters you can count on ld~"'I.

Ideal is a specialist's specialist - a com· plete facility with 100% concentration on meter development and design exclusively.. Ideal meters are used by every branch of the Military and by leaders in defense and industry. Whatever you need in meters-ruggedized or commercial , custom and stock, 1/2 " to 7" -call Ideal, the proven leader.

Write for free 52-pg. handbook and catalog. Ideal Precision Meter Co., Inc., 218 Franklin St., Brooklyn, N.Y. 11222. (212) EVergreen 3-6904.

ON READER- SERVICE CARD CIRCLE 70

203

PL907 PL908 PL909 PL910 PL911 PL912 PL913 PL9I5 PL9I6 PL92I PL930 PL93I PL932 PL933 PL946
Q~·5AH
Q85AH

-Q"7"""

2El 2A 2C
· 2El 2El
2A 21 2EI 28 2F IE3 18 1D IF 1E3
8so0

RC243 RC246 RC301 RC322
RC323 RC324 RC342 RC344 RC40I
RC103I RC1032 RC1033 RC1231 RC1232
RCI233 RC1243 RC1443 R0-111 R0-205
R0-206

1E3 S1945 lF S19450 21 S1946
2E2 S19460 2E2 S1948 2E2 S19480 2E2 S1962 2E2 S19620 2E2 SllOOl 2E2 Sl 1004 2E2· SAlO 2E2 SAll 2E2 SA20 2E2 SE101 2E2 SE102 2E2 SE105 2E2 SE106
lF SEllO 1E4 SElll 1E4 SE112

18 18 1E4 1E4 18
18 1E4 1E4
21 21
8U 8U SW IE4 1E4
IF lF 1E4 1E4 1E4

-R-

R0-207

IB SE113

IE4

R0-208

18 SE115

IE4

RllOOl

21 R0-209

1D SE124

18

R11004

21 R0-210

1E4 SE125

18

RI2001 RC103 RC123

28 2E2 2E2

R0-305 R0-306 R0-307

1E4 SEI55 IE4 SE156 18 SE157

10
10 1D

RC124

2E2 R0-30S

18 SE160

11

RC144

2E2 R0-309

1D SE161

11

RC201G RC20IT RC202T
RC203T

1E3 IE3 IB

R0-310 R0-505 R0-506

18 R0-507

1E4 SE170 IE4 SElSO 1E4 SE181 18 SE500

1E4 IE4
aI.Gu

RC204G RC204Q RC204T RC205T

1E3 1E3 IE3 . lJ

R0-50S R0-509 R0-510 R0-711

IB 1D

SE501 SE504

1E4 SE505

lF SE506

SE SU
8H 80

RC206G

1E3 RM-50

78 SE560

81

RC210G RC210Q

10 RM-60 1D RM-70

78 SE750 78 SES06

10 3E

RC210T

1D

SESOS

302

RC211T

1E3

RC212T

18

-S-

SES16 SES25

302 38

RC2I3T RC214T RC215T RC2I6G

18 1E3 18 IE3

S1930 Sl9300 Sl931 SI9310

1E4 IE4

SES26 SE840

IB SE855

18 SES70

38 304
3C 302

RC221T RC223 RC224

1E3 S1932 1E3 S19320 1E3 $1933

1D SESSO

1D lF

SFlO SFll

302 38 38

RC224T

1E3 Sl9330

IF SF12

38

RC226

lF $1944

1E4 SF13

38

RC231G

1E3 S19440

1E4 SF20

38

Selection Guide· for Tubular Parts

.'i>....····....... !

A new Selection Guide for thin metal tubing and tubular parts covers 62 alloys regularly drawn and fabricated including glass-to-metal sealing alloys. To facilitate mating with other parts during assembly, electronic parts are offered with ID-radiused ends. The same machin.ery that does the cutting and ID-radiusing also forms flares, flanges, bulges and constrictions at the same
time thereby minimizing costs. Automated IDradiusing is limited to O.D.'s of 0.040" to 0.187", walls of 0.003" to 0.025" and lengths of Vs" to %". Standard forming techniques extend these sizes to 0.625" max. O.D., 0.003" min. O.D., walls as thi~ as 0.0005" and unlimited lengths.

Uniform Tubes, Inc.
Colleqe~e, Pa. 19426

SF21 SF22 SF23 SF30 SF31 SF32 SF33
SF50 SF51 SF52 SF53 SF60
SF6I Sf62 SF63 SF250 SF251
SF252 SF253 SF260 SF261 SF262
SF263 SG40 SG41 SG.42 SG43
SG50 SG51 SG52 SG53 SG60
SG61' SG62 SG63 SG92 SG93
SGlOO SG101 SG102 SG103 SGllO
S~lll
SG112 SG113 SG120 SG121
SG122 SG123 SG130 SG131 SG132
SG133 SG160 SG161 SG162 SGI63 SG170 SG171 SG172 SG173 SGlSO SGI81 SG1S2 SG1S3 SG190 SG191 SG192 SG193 SG210 $G211 SG212 SG213 SG220 SG221 SG222 SG223

38

38

38

38

38

38

38

38

38

38

38

38

38

38

38

38

38

38

38 3'9

38

38

38

t

303

303

303

303

304 304

304

304

303

303

303

303

3A

3A

304

304

304 304

304

304

304

304

303

303

303

303

3C

3C

3C

3C

3C

3C

3C

3C

3E

3E

3E

3E

3E

3E

3E

3E

303 303

303

303

304

304

304

304

303

303

303

303

204

ON READER-SERVICE CARD CIRCLE 86

ELECTRONIC DESIGN

SG230

3E SN5470

38

SG231

3E SN5472

38

SG232

3E SN5473

38

SG233

3E SN5474

38

SG240

303 SN5480

3A

SG241 SG242 SG243 SG250

303 SN5481 303 SN5490 303 SN5491 304 SN5500

7E 7A 71 BU

SG251

304 SN5510

SH

SG252 SG253 SG260 SG261

304 SN5832 304 SN7000 303 SN7001

1D
402 402

303 SN7300

lB

SG262

303 SN7301'

18

SG263 SG270 SG271 SG272

303 · SN7302

18

3E SN7304

18

3E SN7310

1E4

3E SN73H

:1~4

SG273

3E SN7320

lF

SN343A SN346A

1D SN7330

1E4

1D SN733l

1E4

SN5108 SN5118

5A SN7350

1D

5A SN7360

1E4

SN5128

5C SN7370

1E6

SN5138

·5c SN7380

11

SN5148

5C SN7400

302

SN5158

5C SN7410

302

SN5168

5C SN7420

302

SN5178

58 SN7430

302

SN5188

50 SN7440

302

SN521A

80 SN7451

304

SN522A

80 SN7453

301

SN523A

SH SN7460

3E

SN524A

80 SN7470

38

SN525A

SH SN7472

38

SN526A SN530 SN531

80 18 1E4

SN7473 SN7474 SN7480

38 38 3A

SN532

1E2 SN7481

7E

SN533

1E4 SN7490

7A

SN534 SN535

1E2 10

SN7491 SN7500

71 BU

SN723

SH SN15830

1E3

SN724

80 SN15831

18

SN1729 SN1730 SN1731 SN1732

2A 2C 2El' 2F

SN15833 SN15844 SN15846 SN15848

lF 1E3 f E3 18

SN1733

2El SN15850

18

SN1734 SN1735 SN51018 SN5111

2A 21 5A 5A

. SN15851 SN15862 SN15930 SN15931

11 1E3 1E3
18

SN5112

5A SN15932

1D

SN5113 SN51618 SN51628 SN5191
SN5~_0l
SN5302 SN5304 SN5311 SN5331' SN5360
SN5370 SN5380 SN5400 SN5410 SN5420

5A 5C 5C 5C
l~
18 18 1E4 1E4 1E4

SN15933 SN15944 SN15945 SN15946
SN15948 SN15950 SN15951 SN15962 SN54930
SN54932 SN54946

1E6 SN54948

11 SN54962

302 SN54965

302 302

SN54966 SN74930

iF 1E3 18 1E3
18
18 i I 1E3 302
3C 302
38 302 302
304 302

SN5430

302 SN74932

3C

SN5440

302 SN74946

302

SN5450

304 SN74948

38

SN5451 SN5453

304 3F

SN74962 SN74965

302 302

SN5460

3E SN74966

304

May 17, 1966

SHIELDED
"BLACK BOXES"

protect custom test
circuits with
effective
RF shielding
Use these unique component-mounting die-cast aluminum containers to package active, passive, or isolation networks, voltage dividers, attenuators, or Qther specific testing circuitry ... with RF shielding.
Select from 12 different connector combinations to fit existing test equipment. Aluminum cover secured by four selftapping screws. Solder turret terminals provide permanent, noise-free connections.

TYPICAL MODELS

MODEL 2391

The complete series of Shield~d "Black
Boxes" is described and illustrated in the
new Pomona General Catalog, 11-66.
Write for your free copy today.

POMONA

ELECTRONICS CO., INC.
1500 East Ninth Street, Pomona, California 91769
Telephone (714) 623-3463

ON READER-SERVICE CARD CIRCLE 71

2.0n

IS AIR MOVE

R PROBLEM?

WANT

· TROUBLE-FRE Over 5 million successful installations! That's the record of the Howard Unit Bearing Motor, available only in HOWARD. CYCLOHM Fans and Blowers. A complete line engineered to provide greater output at less cost, and guaranteed for 5 years to require no maintenance or re-lubrication. For rating tables, prices and full information, ask for the Howard Fan and Blower bulletins.

ON READER-SERVICE CARD CIRCLE 72

206

ST25148 SU300
SU305 SU306 SU314 SU315 SU316
SU320 SU331 SU332 SW101 SW102
SW103 SW104 SW115 SW201 SW204
SW211 SW212 SW221 SW224 SW231
SW301 SW304 SW305 SW306 SW307
SW308 SW309 SW310 SW311 SW402
SW708 SW930 SW931 SW932 SW933
SW944 SW945 SW946 SW948 SW962
SW5400 SW5410 SW5420 SW5430 SW5440
SW5450 SW5460 SW5470 SW7400 SW7410
SW7420 SW7430 SW7440 SW7450 SW7460 SW7470 SWAOl SWA02 SWA04 SWA05
SWFlO SWFll SWF12 SWF13 SWF20
SWF21 SWF22 SWF23 SWF50 SWF51
SWF52 SWF53 SWF250 SWF251 SWF252

5A 7K
7K 7K 7K 7K 7K
7K 7K 7K 1E3 1E3
302 302 1E3 1E3 1E3
1E3 18
1E3 1E3 1E3
402 4C 4E
402 402
48 401 401 401 302
1E3 1E3
18 1D lF
1D 18 1E3 18 1E3
302 302 302 302 302
304 3E 38
302 302
302 302 302 304
3E 38 1E3 1E3 IF 1E3
38 38 3B 38 38
38 38 38 38 38
38 38 38 38 38

SWF253 SWF260 SWF261 SWF262 SWF263
SWG4A SWG48 SWG5A SWG58 SWG14
SWG16 SWG21 SWG40 SWG41 SWG42
SWG43 SWG50 SWG51 SWG52 SWG53
SWG60 SWG61 SWG62 SWG63 SWG90
SWG91 SWG92 SWG93 SWGlOO SWG101
SWG102 SWG103 SWGllO SWGlll SWG112
SWG113 SWG120 SWG121 SWG122 SWG123
SWG130 SWG131 SWG132 SWG133 SWG140
SWG141 SWG142 SWG143 SWG150 SWG151
SWG152 SWG153 SWG170 SWG171 SWG172
SWG173 SWG180 SWG181 SWG182 SWG183
SWG210 SWG211 SWG212 SWG213 SWG220
SWG221 SWG222 SWG223 SWG230 SWG231
SWG232 SWG233 SWG240 SWG241 SWG242
SWG243

38 38 38 38 38

302 302 301 301 302

302 301 302 302 302

302

301

301

301

t-

301

302 302 302 302 304

304 304 304 301 301

301 301 301 301 301

301 302 302 302 302

302 302 302 302 302

302 302 302
3E 3E

3E 3E 3E 3E 3E

3E 3E 3E 3E 3E

301 301 301 301 302

302 302 302
3E 3E

3E 3E 302 302 302

302

ELECTRONIC DESIGN

SWG250 SWG251 SWG252 SWG253
SWG260 SWG261 SWG262 SWG263 SWG270
SWG271 SWG272 SWG273
-T-
T35-002 TFF3011 TFF3013 TFF3015 TFF3017
TMC40001 TMC40002 TMC40003 TMC40004 TMC.40005
TMC40006 TNG301.1 TNG30r3 TNG30:15 TNG3017
TNG3031 TNG3041 TNG3043 TNG3045 TNG3047
TNG3051 TNG3111 TNG3113 TNG3115 TNG3117
TNG3131 TNG3141 TNG3143 TNG3145 TNG3147
TNG3211 TNG3213 TNG3215 TNG3217 TNG3231
TNG3241 TNG3243 TNG3245 TNG3247 TNG3251
TT , u l 1 0 3 TTµ,Ll04
-U-
UC 1001 B UC1002B UC1003B UC1004B UC10058
UC1006B UC1501A UC1502A UC1503A UC1504A
UC1505A UC1506A UC1507A UC1508A UC1509A UC1510A USOlOOA
May 17, 1966

301 301 301 301
302 302 302 302
3E
3E 3E 3E
2H 38 38 38 38
5C 50 5A 5C
BH
BO 303 303 303 303
303 3D3 303 303 303
3E 303 303 303 303
303 303 303 303 303
303 303 303 303 303
303 303 303 303
3E
303 303
1E3 18 1D lA lF
lF
BL
BP
BL
BP
BL
BP
BL
BM
BR
8R 5A

US0101A US0102A US0103A
-W-
WC1B3G WMl08 WM201 WM202 · WM203
WM204 WM205 WM206 WM20BT WM210
WM211 WM212 WM213 WM214 · WM215
WM216 WM217 WM221 WM224 WM225G
WM226G WM227 WM231 WM234G WM236G
WM241G WM246 WM246G WM261G WM2B6G
WM296G WM503 WM506 WM510 WM556
WM701 WM704 WM1101 WM1102 WM1106
WM1116 WM1126 WM1136 WM1146 WM1146Q
WS112y WS115 WS123 WS140y WS141G
WS142 WS143G WS144 WS150 WS150Q
WS151 WS153 WS161Q WS277 WS371
WSBlOQ WSBllQ WS812Q WSB13Q WSB14Q
WSB15 WSB16 WSS17 WSB17Q WS934
WS1454

5A 5C 5C
BC
BL
1E3 18 18
1E3 1J
1E3 7C 1D
1E3 18 18
1E3 18
1E3 lF
1E3 1E3
18
1E3 lF
1E3 1D
1E3
1E3 1E3 1E3 1E3 1E3
1E3 18
1E3 1D
1E3
303 303
BS BN BW BW BW BW BW
BE
BW BH BH
BQ
BH BH BH BH
lC 70
BO
BsoH
2E2 401
1E2 1E3 1E2 lEl 1E2
lC 10 1D 1D ST
SQ

4700 Series
MICRO-MINIATURE Highest O
Variable Air Capacitors

New Johanson 4700 Series variable air capa· citors provide, in micro miniature size, the high Q important in demanding aerospace applications. In addition their ultra-rugged construction assures highest reliability in the most critical environments.
Available in printed circuit, turret and threaded terminal types.

SPECIFICATIONS Size: .145 diameter, 1f2" length Q @ 100 MC, >5000 Q@ 250 MC, >2000 Capacity Range: 0.35 pF to 3.5 pF Working Voltage: 250 VDC (test voltage, 500 VDC) Insulation Resistance: > 106 Megohms Temp. Range: -55°C to 125°C Temp. Coefficient: 50±50 ppm/°C

Write today for full data.

~ /fW l-( .~_ MAJNUCFOARCPOTRUARTIIONNG

400 Rockaway Valley Road, Boonton, N. J. 07005 (201) 334-2676

· IU.,ECTRONIC ACCURACY THROUGH MECHANICAL. PRECISION .

ON READER-SERVICE CARD CIRCLE 26

207

Why IEE rear-projection readouts make good reading

Not the kind of good reading you'd curl

up with on a rainy night. But a more

important kind if you're designing

equipment that requires message dis-

play. Reason is that IEE readouts are

the most readable readouts around. If

you've seen them, you know this to be

fact. If you haven't as yet, here is why

our readouts make such good reading:

IEE's unique combination of singleplane projection, flat viewing screen,

balanced ratio of brightness/contrast,

and big, bold characters makes for For free reprints . . .

wide-angle clarity and long viewing distances.

. just circle the numbers

·

OTHER WAYS IEE READOUTS MAKE GOOD SENSE As if the superior readability of our

on your Reader-Service Card.

readouts weren't enough, here are a Planning to use MOS arrays?

SINGLE-PLANE PRESENTATION
No visual hash of tandem-stacked fila~ ments. IEE readouts are miniature rear-projectors that display the required messages, one at a time, on a non-glare viewing screen. Only the

few reasons why IEE readouts make good sense in other areas :
BPI

Learn which factors influence equipment weight, size and power as well as system cost. Circle Reader-Service No. 510.

message that's "on" is visible.

INFINITE DISPLAY VERSATILITY

New FETs replace tubes in audio

lll~:~·JN

Because our readouts use lamps, lenses, film, and a screen, they can display literally anything that can be put on film. That means you have up to 12 message positions with each readout to display any combination of letters, words, num-

equipment on a one-for-one basis. The advantages include higher gain and reduced distortion, with little parameter drift. Circle Reader-Service No. 511.

EASY-TO-READ CHARACTERS

bers, symbols, and even colors!

Since IEE readouts can display any-

Its what's up front that counts

thing that can be put on film, you're not

when good noise performance is

limited to thin wire filament, dotted, or segmented digits. Order your IEE readouts with familiar, highly legible characters that meet human factors and Mil Spec requirements. This section from our sample type sheet gives you an idea

FIVE SIZES TO PICK FROM

needed in integrated amplifiers. An analysis of direct-coupled cascades proves the point. Circle Reader-Service No. 512.

of the·styles available that offer optimal stroke/width/height ratio for good legibility.

IEE readouts now come in five sizes providing maximum character heights of%",%", 1", 2", and 3%". The smallest is the new Series 340 readout that's

A FET operating at UHF? That's right. And here's how to design a high-gain, low-noise,

BALANCED BRIGHTNESS/CONTRAST RATIO , only %,~, H x 1h '" W, yet can be read from stable 500 MHz amplifier with

The chart below is a reasonable f ac- 30 feet away. The largest, the Series simile of character brightness and how 80, is clearly legible from 100 feet away.

field-effect transistors. Circle Reader-Service No. 513.

EASY TO OPERATE

it affects readability. The background is constant, but the brightness increases from left to right. You can draw your own conclusions, armed with the fact that IEE readouts give you up to 90 foot lamberts of brightness. Brightness, however, isn't the sole factor in judging readability. Background contrast is equally important- a fact we've simu-
mm lated below, reading from left to right.
Obviously, brightness without contrast or vice versa, doesn't do much for readability. A balanced ratio of both gives you the crisp legibility of IEE readouts.

IEE readouts are available with voltage requirements from 6 to 28 volts, depending on lamps specified. Commercial or MS lamps may be used, with up to 30,000 hours of operation per lamp. Lamps may be rapidly replaced without tools of any kind.
Our readouts operate from straight decimal input or will accept conventional binary codes when used with IEE low-current driver/decoders.
For more proof why IEE rear-projection readouts make good reading, send us your inquiry. You'll see for yourself why they've been making the best seller list, year after year!

INDUSTRIAL ELECTRONIC ENGINEERS, INC.

7720 Lemona Avenue, Van Nuys, California

Phone: (213) 787-0311 · TWX (910) 495-1707

Representatives in Principal Cities

0 1966 1·e;

Simplify NAND-circuit synthesis in your next logic design. Here are the various methods for implementing a logic function entirely with NAND gates. Circle Reader-Service No. 514.

ON READER-SERVICE CARD CIRCLE 75

208

ELECTRONIC DESIGN

with Tl semiconductor instrumentation

MODEL 553 DYNA MIC TEST SYSTEM (upperright)
for single-socket d-c and dynamic testing of I C's, thin films, modules, discrete semiconductors. The 553 makes digitally-programmed automatic
measurements with an accuracy of 1% of read-
ing. Operators can easily learn to program tests using simple mnemonic language.
MODEL 665 TRANSISTOR TEST SYSTEM (upper left)
for transistors and diodes features fast program changes. Change paper tape program in 10 seconds. Make any number of d-c and pulse tests with programmable socket configuration.

MODEL 6358 RESISTIVITY METER
A portable a-c test instrument for measuring bulk, slice and sheet resistivity of semiconductor material. A 5-point probe gives high accu-
racy. Range is ~~liiiiiiiiii,
from .001 to 300 · ohm-cm fs; 0.1 to 3000 ohms/ sq.

INDUSTRIAL PRODUCTS GROUP

T EXAS INSTRUMENTS
INCORPORATED
APPARATUS DIVISION

P. O . BOX 66027 HOUSTON , TEXAS 77006

802

ON READER-SERVICE CARD CIRCLE 76

UNICIRCUIT® RCTL INTEGRATED CIRCUITS

UNICIRCUIT®mW RTL INTEGRATED CIRCUITS
Types US-0908 through US-0921 ... Fully interchangeable mW digital building blocks featuring power consumption of 4mW/node and propagation delay of 40 nsec
ON READER-SERVICE CIRCLE 102

DIFFERENTIAL AMPLIFIER TRANSISTOR PAIRS

~

T0 - 18
CASE

T0-5

FLAT

CASE · PACK

NPN or PNP · Matched characteristics.
hFE= 10-203. ~VBE = 5-20 mV. LW eE /Temp = 5-20µV /°C.

ON READER-SERVICE CIRCLE 103

(SX actual size)
Sprague Series US-0100 ··· a complete line of monolithic digital buildi ng bloc ks featuring low power consumption (2 mW typ.)

ON READER-SERVICE CIRCLE 101
'""' =...,.. ""-=-~':.::.::i

MULTIPLE TRANSISTORS (NPN-PNP PAIRS/QUADS)

ltiffflff

AMPLIFIERS SWITCHES CHOPPERS

Pairs
2 NPN 2 PNP 1 NPN- 1 PNP

Quads
4 NPN 4 PNP 2 NPN- 2 PNP

ON READER-SERVICE CIRCLE 104

UNICIRCUIT®CUSTOM HYBRID CIRCUITS
Combine monolithic sil icon circuits with tantal.um or Ni -Cr alloy resistors . Close resistance tolerances, low temperature
coefficient. Resistor matching, ± Yz 3.

LOW-COST HERMETICALLY-

SEALED PLANAR TRANSISTORS

TN SERIES (NPN) High Voltage Switches
Low Level Ampl ifiers High Speed Switch/Amplifiers
Choppers Power Ampl ifiers
Core Drivers

TQ SERIES (PNP)

Low Level Amplifiers

High Gain Switch/Ampl ifiers High Speed Switches

C1A0S_E5

SILICON ALLOY REPLACEMENT TRANSISTORS

II

FULL PLANAR RELIABILITY

2N327A 2N328A 2N329A

2N945 2N946 2N1025

2Nl026 2Nl469 2Nl917

Sprague makes 82 standard high emitter- voltage full planar silicon alloy replacement types.

ON READER-SERVICE CIRCLE 105

ON READER-SERVICE CIRCLE 106

......-O-N READER-SERVICE CIRCLE 107

DIGIT Al-TO-ANALOG CONVERSION CIRCUITS

TW-3000 MICROPOWER PNP SILICON HIGH-SPEED
SWITCHING TRANSISTORS

UT-1000- Four-bit ladder network
UT-4001- Ladder switch for driving resistor ladder networks
UT-4024- Buffer amplifier

T0 -18
CASE

Fastest switching transistor available in the 1 to lOOµA range
C;b = 0.7 pF typ ., 1.5 pF max.
Cob = 1.5 pF typ., 2.5 pF max.

ON READER-SERVICE CIRCLE 108

ON READER-SERVICE CIRCLE 109

SPRAGUE COMPONENTS

INTEGRATED CIRCUITS THIN-FILM MICROCIRCUITS ! RANS ISTORS CAPACITORS RESISTORS
4SS· 6128

PULSE TRANSFORMERS INTERFERENCE FILTERS PULSE·FORMING NOWORKS TOROIDAL INDUCTORS ELECTRIC WAVE FILTERS

CERAMIC-BASE PRINTED NETWORKS PACKAGED COMPONENT ASSEMBLIES BOBBIN and TAPE WOUND MAGNETIC ·CORES SILICON RECTIFIER GATE CONTROLS FUNCTIONAL DIGITAL CIRCUITS

For complete technical data on any of these products,
write to: Technical Literature Service Sprague Electric Company
347 Marshall Street North Adams, Mass. 01247
::ZC"
SPRllGUE®
THE MARK OF RELIABILITY
·6