MRFE6VP61K25H, MRFE6VP61K25HS 2 Meter Amateur Z 32/5 W RDMRFE6VP61K25H 2MTR

User Manual: Z 32/5 W

Open the PDF directly: View PDF .
Page Count: 16

Download
Open PDF In Browser	View PDF

Freescale Semiconductor
Technical Data

Available at http://freescale.com/RFindustrial > Design Support > Reference Designs or
http://freescale.com/RFbroadcast > Design Support > Reference Designs

Rev. 0, 6/2011

144--148 MHz, 1250 W CW, 50 V
2 METER AMATEUR
REFERENCE DESIGN

VGG

RF
INPUT

+

M = Match

VDD
BIAS

Reference Design Characteristics
This document describes a high efficiency, rugged linear amplifier reference
design for 2 meter amateur band (144 MHz -- 148 MHz) operation. Because of
the ruggedness and low thermal resistance of the MRFE6VP61K25H transistor
used in the design. the design can output high power even when operating into
high VSWR. The amplifier can be biased for Class AB linear or Class C
operation and is suitable for both analog and digital waveforms (AM/SSB or
WSJT/FM/CW).
• Frequency Band: 144--148 MHz
• Output Power: >1250 Watts CW
• Supply Voltage: 50 Vdc
• Power Gain (Typ): 26 dB
• Class C Drain Efficiency (Min): >78%
• IMD @ 1 kW Output: < --28.5 dB
The MRFE6VP61K25H transistor used in this design is one of the devices in
Freescale’s RF power enhanced ruggedness 50 volt LDMOS product line. These
devices, including the 600 watt MRFE6VP5600H and the 300 watt
MRFE6VP6300H, are all specifically designed for 50 volt operation under harsh
conditions.

M

M

RF
OUTPUT
+
-

M

VGG

M
BIAS

High Ruggedness N--Channel Enhancement--Mode
Lateral MOSFETs

BIAS

2 Meter Amateur Reference Design

MRFE6VP61K25H
MRFE6VP61K25HS
2 Meter Amateur

BIAS

RF Power Reference Design Library

VDD

2 METER AMATEUR REFERENCE DESIGN
This reference design is designed to demonstrate the RF
performance characteristics of the MRFE6VP61K25H/HS
devices operating in 144--148 MHz amateur radio band. The
reference design shows two operational modes with different
optimizations, VDD = 50 volts, IDQ = 2500 mA for Class AB
linear operation or VDD = 43 volts, IDQ = 200 mA for Class C
operation.

REFERENCE DESIGN LIBRARY TERMS
AND CONDITIONS
Freescale is pleased to make this reference design
available for your use in development and testing of your

own product or products. The reference design contains an
easy--to--copy, fully functional amplifier design. It consists of
“no tune” distributed element matching circuits designed to
be as small as possible, and is designed to be used as a
“building block” by our customers.

HEATSINKING
When operating this fixture it is critical that adequate
heatsinking is provided for the device. Excessive heating of
the device may prevent duplication of the included
measurements and/or destruction of the device.

Figure 1. 2 Meter Amateur Reference Design Fixture
© Freescale Semiconductor, Inc., 2011. All rights reserved.

RF Reference Design Data
Freescale Semiconductor

MRFE6VP61K25H MRFE6VP61K25HS 2 Meter Amateur
1

PERFORMANCE AND RF MEASUREMENTS
Measurement is done using a CW (single tone) signal
unless specified otherwise.
Data was taken using an automated characterization
system, ensuring repeatable measurements.

The reference design was tuned with a trade--off between
linearity and efficiency. Other tuning optimizations are
possible.

Table 1. 50 V Drain Supply, IDQ = 2500 mA (for Class AB, linear operation)
Freq.
(MHz)

Pin
(W)

Pout
(W)

Gain
(dB)

IRL
(dB)

Eff.
(%)

VDD
(v)

144
144

IDD
(A)

0.1

73

28.6

--17.6

19.6

50

7.5

0.3

178

28.5

--18.1

31.8

50

11.2

144

0.5

392

28.9

--17.7

48.0

50

16.3

144

0.7

573

28.8

--17.1

57.8

50

19.8

144

1.0

724

28.6

--16.0

64.2

50

22.5

144 P1dB

1.5

920

27.9

--14.2

70.7

50

26.0

144

1.75

1003

27.6

--13.4

73.0

50

27.4

144

2.25

1135

27.0

--12.1

76.4

50

29.7

144

2.5

1201

26.8

--11.3

78.0

50

31.0

144

3.0

1250

26.2

--11.3

78.8

50

31.7

144 P3dB

3.5

1311

25.7

--10.9

79.9

50

32.8

Table 2. 50 V Drain Supply, IDQ = 200 mA (for Class C, non--linear operation, without board retuning)
Freq.
(MHz)

Pin
(W)

Pout
(W)

Gain
(dB)

IRL
(dB)

Eff.
(%)

VDD
(v)

IDD
(A)

144

0.1

19

22.9

144

0.3

79

25.0

--14.5

11.6

50

3.3

--16.2

23.6

50

144

0.5

271

6.8

27.3

--16.7

42.7

50

12.7

144

0.8

144

1.0

372

27.0

--17.5

49.8

50

14.9

513

27.1

--17.4

57.6

50

144

17.8

1.5

771

27.1

--15.6

68.2

50

22.6

144

1.7

821

26.7

--15.3

69.8

50

23.5

144

2.2

975

26.4

--13.8

74.2

50

26.2

144

2.5

1059

26.3

--12.8

76.3

50

27.7

144

3.0

1118

25.7

--12.6

77.8

50

28.7

144

3.5

1195

25.3

--12.0

79.5

50

30.0

144

4.0

1255

25.0

--11.6

80.7

50

31.0

144

4.5

1301

24.6

--11.4

81.6

50

31.8

144

5.0

1339

24.3

--11.2

82.4

50

32.5

Table 3. 43 V Drain Supply, IDQ = 200 mA (for Class C, non--linear operation, without board retuning)
Freq.
(MHz)

Pin
(W)

Pout
(W)

Gain
(dB)

IRL
(dB)

Eff.
(%)

VDD
(v)

IDD
(A)

144
144
144
144
144
144
144
144
144
144
144
144
144
144

0.1
0.3
0.5
0.8
1.0
1.5
1.8
2.3
2.5
3.0
3.5
4.0
4.5
5.0

17
74
254
337
459
640
708
797
752
900
953
991
1038
1060

22.5
24.8
27.1
26.5
26.6
26.3
26.1
25.5
24.8
24.8
24.3
24.0
23.6
23.3

--14.2
--16.2
--16.7
--17.5
--16.9
--14.7
--13.8
--12.9
--14.3
--11.8
--11.4
--11.1
--11.0
--10.9

12.9
26.9
48.4
55.1
62.8
71.2
73.8
76.8
75.3
79.7
81.1
81.9
83.1
83.5

43
43
43
43
43
43
43
43
43
43
43
43
43
43

3.2
6.5
12.2
14.2
17.0
20.9
22.3
24.1
23.2
26.2
27.3
28.1
29.0
29.5

MRFE6VP61K25H MRFE6VP61K25HS 2 Meter Amateur
2

RF Reference Design Data
Freescale Semiconductor

CIRCUIT DESCRIPTION
The input circuit uses a 9/1 balun transformer with a
prematch done by a series inductor and a shunt capacitor.
The shunt capacitor is optional but is useful to center the
input return loss (IRL). The input circuit return loss is always
better than 10.5 dB, equivalent to a worst case VSWR of 1.8.
The output circuit consists of a 4/1 transformer using two
4.7″ lengths of 10 Ω coaxial cable. It is also recommended
that three DC blocks in parallel be used in order to lower the

total equivalent series resistance (ESR) which is critical at
this high power.
The output balun is made from a 6.7″ length of “Sucoform
250” 50 Ω coaxial cable, and acts as a Pi match with
2 x 15 pF at the input and 5.6 pF at the output.

FIXTURE IMPEDANCE
VDD = 50 Vdc, IDQ = 200 mA, Pout = 1100 W CW
f
MHz

Zsource
Ω

Zload
Ω

144

1.6 + j5.0

3.9 + j1.5

Input
Matching
Network
Z

= Test circuit impedance as measured from
drain to drain, balanced configuration.

Output
Matching
Network

--

--

Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload

Device
Under
Test

+

+
Z

source

load

Figure 2. Series Equivalent Source and Load Impedance
C1
C3

B1

VGS

R1

RF
INPUT

T1
L1

C2

COAX1

C7
C8
C5

C19 C20

C6

RF
OUTPUT

COAX3

C9

C4

C10
C11

COAX2

C12

C15 C16 C17

L2

C18
VDD

C13

C14

Figure 3. 2 Meter Amateur Reference Design Schematic Diagram
MRFE6VP61K25H MRFE6VP61K25HS 2 Meter Amateur
RF Reference Design Data
Freescale Semiconductor

3

COAX1

C15 C16 C17

C1

C18

+
COAX3

B1
C3
L2

R1

C19

C7
C8
C9

C20

T1
L1

C4

C10
C11

C5
C6

C12

C14

C13

MRFE6VP61K25H Rev. 2
*C7, C8, C9, C10, C11, and C12 are mounted vertically.
Note: Component number C2 is not used.

COAX2

Figure 4. 2 Meter Amateur Reference Design Component Layout

Table 4. 2 Meter Amateur Reference Design Component Designations and Values
Part

Description

Part Number

Manufacturer

B--

95 Ω, 100 MHz Long Ferrite Bead

2743021447

Fair--Rite

C1

6.8 μF, 50 V Chip Capacitor

C4532X7R1H685K

TDK

C3, C5, C7, C8, C9, C10,
C11, C12, C13, C15

1000 pF Chip Capacitors

ATC100B102KT50XT

ATC

C4

5.6 pF Chip Capacitor

ATC100B5R6CT500XT

ATC

C6

470 pF Chip Capacitor

ATC100B471JT200XT

ATC

C14, C16

1 μF, 100 V Chip Capacitors

C3225JB2A105KT

TDK

C17

2.2 μF, 100 V Chip Capacitor

HMK432B7225KM--T

Taiyo Yuden

C18

470 μF, 100 V Electrolytic Capacitor

MCGPR100V477M16X32--RH

Multicomp

C19, C20

15 pF Chip Capacitors

ATC100B150JT500XT

ATC

L1

43 nH Inductor

B10TJLC

CoilCraft

L2

7 Turn, #14 AWG, ID = 0.4″ Inductor

Handwound

Freescale

R1

11 Ω, 1/4 W Chip Resistor

CRCW120611R0FKEA

Vishay

T1

Balun

TUI--9

Comm Concepts

Coax1, Coax2

Flex Cables, 10.2 Ω, 4.7″

TC--12

Comm Concepts

Coax3

Coax Cable, 50 Ω, 6.7″

SUCOFORM250--01

Huber+Suhner

PCB

0.030”, εr = 3.50

TC--350

Arlon

* PCB artwork for this reference design is available at http://freescale.com/RFindustrial > Design Support > Reference Designs or
http://freescale.com/RFbroadcast > Design Support > Reference Designs.

Note: See Appendix B for Mounting Tips.

MRFE6VP61K25H MRFE6VP61K25HS 2 Meter Amateur
4

RF Reference Design Data
Freescale Semiconductor

VIEWS OF 2 METER AMATEUR REFERENCE DESIGN

Overall

Input

Output

Figure 5. 2 Meter Amateur Reference Design Detailed Views

MRFE6VP61K25H MRFE6VP61K25HS 2 Meter Amateur
RF Reference Design Data
Freescale Semiconductor

5

IMD MEASUREMENT
board over the temperature range (not shown on picture).
Refer to Freescale’s AN1643 RF LDMOS Power Modules for
GSM Base Station Application: Optimum Biasing Circuit
application note(1) or the VHF Broadcast reference design for
more information.(2)
The two--tone IMD values are referenced to the peak
envelope power (PEP) and are spaced 1 kHz apart.

IMD measurement was done using two signal generator
with a tone spacing of 1 kHz. Quiescent current was set for
2.5 A under 50 volts with no RF signal at input. 2.5 A was
choosen as a good compromise between gain, linearity and
efficiency.
In order to get optimal linearity, a thermal compensation
circuit was used that tracks the quiescent current of the

Table 5. Two--Tone IMD
Pout
(W) PEP

IM3--L

IM3--U

IM5--L

IM5--U

IM7--L

IM7--U

IM9--L

IM9--U

100.0

--42.2

--42.2

--61.3

--64.1

--72.5

--74.4

--85.1

--85.1

199.5

--42.0

--42.3

--57.8

--59.6

--69.9

--70.6

--75.2

--78.0

399.8

--44.8

--44.0

--50.8

--51.7

--66.6

--68.2

--73.3

--72.1

599.3

--41.7

--41.5

--45.1

--45.5

--68.1

--71.7

--68.1

--68.9

797.1

--33.7

--33.7

--42.4

--42.2

--56.5

--57.3

--68.5

--65.9

899.8

--30.8

--30.9

--42.0

--41.8

--51.9

--52.4

--68.0

--69.5

997.8

--28.7

--28.6

--42.7

--42.3

--48.6

--48.7

--73.7

--73.4

D at e:

3. NOV .20 10

1 4: 48:19

Figure 6. 1000 W PEP Two--Tone Spectrum

MRFE6VP61K25H MRFE6VP61K25HS 2 Meter Amateur
6

RF Reference Design Data
Freescale Semiconductor

D at e:

3. NOV .20 10

1 4: 46: 32

Figure 7. 800 W Two--Tone Spectrum

D at e:

3. NOV .20 10

1 4:52 : 11

Figure 8. 600 W Two--Tone spectrum
MRFE6VP61K25H MRFE6VP61K25HS 2 Meter Amateur
RF Reference Design Data
Freescale Semiconductor

7

D at e:

3. NOV .20 10

1 4:51 : 00

Figure 9. 400 W Two--Tone SPectrum

D at e:

3. NOV .20 10

1 4:51 : 00

Figure 10. 200 W Two--Tone Spectrum

MRFE6VP61K25H MRFE6VP61K25HS 2 Meter Amateur
8

RF Reference Design Data
Freescale Semiconductor

HARMONIC MEASUREMENTS
At the one kW level, second harmonic is --42 dBc, third
harmonic is --32 dBc, and fourth harmonic is --37 dBc.
To be used “on the AIR” this amplifier will likely need a filter
to be compliant with local regulations. A diplexer could give

D at e:

4. NOV .20 10

better results than a simple low pass filter because
harmonics are absorbed in a resistive load instead of being
reflected to the transistor.

1 6:47 : 52

Figure 11. Harmonics @ 1 kW

FREESCALE RF POWER 50 V TECHNICAL ADVANTAGES

50 volt operation offers benefits over lower voltage
operation because the output impedance of the device for
the same output power is much greater, so the output match
circuitry is simpler and has lower loss. IMD performance is
better and supply current will also be lower than with low
voltage operation.
The reference fixture was designed with the market
standard power supply, allowing the amplifier to utilize a
standard 48 volt power supply (most are adjustable from 43
to 54 volts).

Setting the gate bias voltage to around --4 volts will totally
block the transistor even if the RF input signal is still there.
Enhanced ESD
2.E--02
1.E--02
IESD (A)

50 V Drain Voltage

5.E--03
0.E+00
--5.E--03
--1.E--02
--2.E--02
--15 --10 --5

0

Extended Gate Voltage Range

15

20

25

15

20

25

Standard ESD
2.E--02
1.E--02
IESD (A)

The enhanced electro--static discharge protection
structure at the gate of the transistor is a Freescale
innovation pioneered in the cellular infrastructure market that
is incorporated into the 50 V LDMOS RF power product
portfolios. This ESD structure can tolerate moderate reverse
bias conditions applied to the gate lead up to --6 volts (see
Figure 12). This allows Freescale transistors to be used in
applications where the gate voltage needs to be set as low
as --6 volts.
This feature can dramatically simplify protection circuits,
as it allows the transistor to be shut down because of high
VSWR or PLL unlock without shutting down the drive power.

5 10
VGS (V)

5.E--03
0.E+00
--5.E--03
--1.E--02
--2.E--02
--15 --10 --5

0

5 10
VGS (V)

Figure 12. Gate Voltage Breakdown with ESD
MRFE6VP61K25H MRFE6VP61K25HS 2 Meter Amateur

RF Reference Design Data
Freescale Semiconductor

9

Ruggedness

Reliability
MTTF is defined as the mean time to failure of 50% of the
device within a sample size, the primary factor in device
reliability failure is due to electromigration. Once average
operating condition for the applicatin is set, MTTF can be
calculated using the Rth found on the offical Freescale data
sheet.
Example: If desired operating output power is 1000 watts,
with 82% drain efficiency at 43 volts:
• IDrain @ 1 kW 82% eff = 28.2 A
• MRFE6VP61K25H Rth = 0.15°C/W, case temperature =
63°C
• Dissipated power = 219 Watts

• Temperature rise (junction to case) = 219 Watts ×
0.15°C/W = 32.8°C
• TJ = Trise + Tcase = 63°C + 32.8°C = 95.8°C
Utilizing the graph below which cacluates MTTF versus
IDrain and TJ; IDrain = 28 A, MTTF for this example was 8000
years.
100000
10000
28 Amp
MTTF (YEARS)

MRFE6VP61K25H is a very rugged part capable of
handling 65:1 VSWR, provided thermal limits are not
exceeded.
It was designed for high mismatch applications, such as
laser and plasma exciters, that under normal operation
exhibit high VSWR values at startup and then come back to
a more friendly impedance. In CW at high VSWR values and
simultaneously at rated power, the limiting factor is the
maximum DC power dissipation.
VSWR protection that shuts down the gate voltage within
10 ms will protect the transistor effectively.
The amplifier presented here was tested at full power with
all phase angles with 10 ms pulsed 5% duty cycle without
failure or degradation in RF performance.

1000

20 Amp
24 Amp

100
10
1
70

90

110

130

150

170

190

210

230

TJ, JUNCTION TEMPERATURE (°C)

Figure 13. MTTF versus Junction Temperature
There is an MTTF (Median--Time--To--Failure) calculator(3)
available to assist the customers in estimating the
MRFE6VP61K25H device reliability in terms of
electromigration wear--out mechanism.

MRFE6VP61K25H MRFE6VP61K25HS 2 Meter Amateur
10

RF Reference Design Data
Freescale Semiconductor

THERMAL MEASUREMENTS
After one minute at 1 kW CW 44 volt supply at 80%
efficiency, with no airflow on the top of the board, the output
capacitor matching runs at 55°C, and the 10 Ω coax section
is around 90°C.
After 5 minutes “key down” CW, the highest temperature is
113°C on the 10 Ω coax section (Teflon cable is rated up to

200°C), output match capacitors do not show signs of
overheating.
If the board is run at levels higher than 1 kW CW or digital
mode, airflow over the top side of the board could help to
cool down coax and improve reliability.

As shown in Figure 14, the board was painted with black coating to correct for variations in emissivity

Figure 14. Reference design with black coating needed to obtain accurate thermograph images

MRFE6VP61K25H MRFE6VP61K25HS 2 Meter Amateur
RF Reference Design Data
Freescale Semiconductor

11

REFERENCES
1. “RF LDMOS Power Modules for GSM Base Station
Application: Optimum Biasing Circuit.” (Document
Number: AN1643) Application Note, 1998.
2. VHF Broadc as t Referenc e Des ign av ailable at
http://freescale.com/RFbroadcast > Design Support >
Reference Designs.

3. MRFE6VP61K25H MTTF c alc ulator av ailable at
http://freescale.com/RFpower > Software & Tools >
Dev elopment Tools > Simulations and Models >
Calculators. Enter the “part number” into the Search field
for quickest results.
4. “Mounting Recommendations for Copper Tungsten
Flanged Transistors.” (Document Number: AN1617)
Application Note, 1997.

Technical documentation, including data sheets and application notes, for Freescale RF Power product can be found at:
http://freescale.com/RFpower. Enter the applicable Document Number into “Keyword” search for quickest results.

MRFE6VP61K25H MRFE6VP61K25HS 2 Meter Amateur
12

RF Reference Design Data
Freescale Semiconductor

APPENDIX A

Cautions
The board drive level is very low and excessive drive level
will destroy the transistor. If used with a transmitter, be
careful with your power control as some transmitters have
very high power spikes at startup due to a badly designed
ALC. It is a better idea is to put a power attenuator ahead of
this amplifier to protect against overdrive.

MRFE6VP61K25H MRFE6VP61K25HS 2 Meter Amateur
RF Reference Design Data
Freescale Semiconductor

13

APPENDIX B

Mounting Tips
An Arlon TC350 PCB was chosen for its high thermal
conductivity.
Mounting is done on a copper heat spreader. Flatness
under the transistor flange is critical; good flatness is
mandatory for both RF and thermal performance. The
transistor is mounted on the heat spreader using a thin layer
of thermal compound.
When using bolt--down mounting do not over--torque the
part. Over tightening the fasteners can deform the transistor
flange and degrade both the RF and thermal performance,
as well as long term reliability.
To reach optimum performance, the PCB must be
soldered to the copper heat spreader. This is usually done
using a hotplate and solder paste. It is critical that the
soldering near the transistor and connectors is free of voids
and is of high quality in to order to achieve best performance
and reliability.
Refer to Freescale’s AN1617 Mounting Recommendations
for Copper Tungsten Flanged Transistors application note for
more information.(4)

MRFE6VP61K25H MRFE6VP61K25HS 2 Meter Amateur
14

RF Reference Design Data
Freescale Semiconductor

APPENDIX C

1.929 (48.98)

8x
#4--40
0.300″ deep
2.737 (69.51)

0.41 (10.41)

1.813 (46.04)

2.719 (69.07)

E
F

A

D
A

B
D

A

2.882 (73.19)

A
D

E

0.813 (20.64)
0.140 (3.56)

1.309 (33.26)

B

0.611 (15.52)

F

D

1.668 (42.38)
1.489 (37.83)
∅0.188 (∅4.76)
1.129 (28.69)
0.950 (24.14)

B
A

D

0.130 (3.32)

0.125 (3.17)

4.725 (120.02)

4.499 (114.28)

2.929 (74.38)

2.134 (54.19)

1.724 (43.78)

2.283 (57.98)

AA

1.929 (48.99)

1.558 (39.58)

0.929 (23.59)

0.000 (0.00)

0.00 (0.00)
0.177 (4.50)

0.000 (0.00)

A

2.011 (51.08)

0.000 (0.00)
0.128 (3.25)
0.324 (8.23)

D

4.548 (115.52)

Copper Heatsink for 2 Meter Amateur Fixture

inches (mm)

C, Device Channel

0.038 (0.97)

0 (0.00)
0.300 (7.62)
0.720 (18.29)

E

Gutter is 0.030 wide
and 0.046 deep, both
sides

2.929 (74.39)

0.929 (23.59)

E

0.720″ Copper Heatsink Hole Details
Designators

Details

A

2 places, both sides, drill and tap, #2--56 screw depth 0.300″

B

2 places, both sides, 0.1875″ diameter notch 0.020″ deep

C

NI--1230 channel 0.410″ wide by 0.0380″ deep

D

2 places, both sides, drill depth 0.250″ and tap for #4--40 screw

E

Locator holes from bottom diameter = 0.257″, depth = 0.400″

F

2 places, drill through and tap for #4--40 screw

Figure 15. Heatspreader Design

MRFE6VP61K25H MRFE6VP61K25HS 2 Meter Amateur
RF Reference Design Data
Freescale Semiconductor

15

How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1--800--521--6274 or +1--480--768--2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1--8--1, Shimo--Meguro, Meguro--ku,
Tokyo 153--0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1--800--441--2447 or +1--303--675--2140
Fax: +1--303--675--2150
LDCForFreescaleSemiconductor@hibbertgroup.com

Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2011. All rights reserved.

MRFE6VP61K25H MRFE6VP61K25HS 2 Meter Amateur
Available at http://freescale.com/RFindustrial > Design Support > Reference Designs or
http://freescale.com/RFbroadcast > Design Support > Reference Designs

16
Rev. 0, 6/2011

RF Reference Design Data
Freescale Semiconductor



---

Source Exif Data:

File Type                       : PDF
File Type Extension             : pdf
MIME Type                       : application/pdf
PDF Version                     : 1.3
Linearized                      : No
XMP Toolkit                     : Adobe XMP Core 4.0-c316 44.253921, Sun Oct 01 2006 17:14:39
Format                          : application/pdf
Creator                         : Freescale Semiconductor
Title                           : MRFE6VP61K25H, MRFE6VP61K25HS 2 Meter Amateur
Description                     : The MRFE6VP61K25H and MRFE6VP61K25HS are versatile devices and well suited for a wide range of applications. Both are capable of delivering 1.25 kW CW RF power because of their high efficiency and low thermal resistance. The document focuses on 2 meter amateur radio applications for both analog and digital modulations.
Subject                         : ldmos, lower thermal resistance, rf power, power amplifier, RF Power FET, RF Power transistor, 2 Meter Amateur, ham radio, amateur radio, reference design
Create Date                     : 2011:06:13 18:58:51-07:00
Creator Tool                    : PScript5.dll Version 5.2.2
Modify Date                     : 2011:06:13 19:03:07-07:00
Metadata Date                   : 2011:06:13 19:03:07-07:00
Producer                        : Acrobat Distiller 8.1.0 (Windows)
Keywords                        : ldmos, lower thermal resistance, rf power, power amplifier, RF Power FET, RF Power transistor, 2 Meter Amateur, ham radio, amateur radio, reference design
Document ID                     : uuid:f3641a0e-f2b4-4dee-b84f-1ff0fbdc58f4
Instance ID                     : uuid:0b0cee47-0098-402c-9c1b-c4cb1af0b79e
Page Count                      : 16
Author                          : Freescale Semiconductor

EXIF Metadata provided by EXIF.tools