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POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 ( July,2001) C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in • Sanken the interest of improvements in the performance, reliability, or manufacturability • • • • • • • • of its products. Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify that the information being relied upon is current. Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. When using the products herein, the applicability and suitability of such products for the intended purpose or object shall be reviewed at the users responsibility. Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing an order, the user’s written consent to the specifications is requested. When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), please contact your nearest Sanken sales representative to discuss and obtain written confirmation of your specifications. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. Anti radioactive ray design is not considered for the products listed herein. This publication shall not be reproduced in whole or in part without prior written approval from Sanken. Contents Transistor Selection Guide..2 Reliability.........................6 Temperature Derating in Safe Operating Area.........9 Accessories.....................9 Switching Characteristics Test Circuit....................10 Symbols and Term...........10 A1186............................11 A1215............................12 A1216............................13 A1262............................14 A1294............................15 A1295............................16 A1303............................17 A1386/A ........................18 A1488/A ........................19 A1492............................20 A1493............................21 A1494............................22 A1567............................23 A1568............................24 A1667/8.........................25 A1673............................26 A1693............................27 A1694............................28 A1695............................29 A1725............................30 A1726............................31 A1746............................32 A1859/A ........................33 A1860............................34 A1907............................35 A1908............................36 A1909............................37 A2042............................38 B1257............................39 B1258............................40 B1259............................41 B1351............................42 B1352............................43 B1382............................44 B1383............................45 B1420............................46 SANKEN POWER TRANSISTORS B1559............................47 B1560............................48 B1570............................49 B1587............................50 B1588............................51 B1647............................52 B1648............................53 B1649............................54 B1659............................55 B1685............................56 B1686............................57 B1687............................58 C2023 ...........................59 C2837 ...........................60 C2921 ...........................61 C2922 ...........................62 C3179 ...........................63 C3263 ...........................64 C3264 ...........................65 C3284 ...........................66 C3519/A ........................67 C3678 ...........................68 C3679 ...........................69 C3680 ...........................70 C3830 ...........................71 C3831 ...........................72 C3832 ...........................73 C3833 ...........................74 C3834 ...........................75 C3835 ...........................76 C3851/A ........................77 C3852/A ........................78 C3856 ...........................79 C3857 ...........................80 C3858 ...........................81 C3890 ...........................82 C3927 ...........................83 C4020 ...........................84 C4024 ...........................85 C4064 ...........................86 C4065 ...........................87 C4073 ...........................88 C4130 ...........................89 C4131 ...........................90 C4138 ...........................91 C4139 ...........................92 C4140 ...........................93 C4153 ...........................94 C4296 ...........................95 C4297 ...........................96 C4298 ...........................97 C4299 ...........................98 C4300 ...........................99 C4301 .........................100 C4304 .........................101 C4381/2 ......................102 C4388 .........................103 C4418 .........................104 C4434 .........................105 C4445 .........................106 C4466 .........................107 C4467 .........................108 C4468 .........................109 C4495 .........................110 C4511 .........................111 C4512 .........................112 C4517/A......................113 C4518/A......................114 C4546 .........................115 C4557 .........................116 C4662 .........................117 C4706 .........................118 C4883/A......................119 C4886 .........................120 C4907 .........................121 C4908 .........................122 C5002 .........................123 C5003 .........................124 C5071 .........................125 C5099 .........................126 C5100 .........................127 C5101 .........................128 C5124 .........................129 C5130 .........................130 C5239 .........................131 C5249 .........................132 C5271 .........................133 C5287 .........................134 C5333 .........................135 C5370 .........................136 D1769 .........................137 D1785 .........................138 D1796 .........................139 D2014 .........................140 D2015 .........................141 D2016 .........................142 D2017 .........................143 D2045 .........................144 D2081 .........................145 D2082 .........................146 D2083 .........................147 D2141 .........................148 D2389 .........................149 D2390 .........................150 D2401 .........................151 D2438 .........................152 D2439 .........................153 D2557 .........................154 D2558 .........................155 D2560 .........................156 D2561 .........................157 D2562 .........................158 D2589 .........................159 D2641 .........................160 D2642 .........................161 D2643 .........................162 SAH02 ........................163 SAH03 ........................164 SAP09N ......................165 SAP09P ......................166 SAP10N ......................167 SAP10P ......................168 SAP16N ......................169 SAP16P ......................170 SAP Series Application Information................171 Discontinued Parts Guide ........................176 1 Transistor Selection Guide ■ VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A C5239 600 550 C3679 C4300 C4706 C3927 C4557 C3830 C4907 400 C4073 C4418 C4662 C5130 C3831 C3832 C3890 C4130 C4546 C4138 C4296 C3833 C4297 C5071 D2017 200 A1668 C4382 180 A1859A C4883A D2016 C5271 D2557 D2558 160 150 C4140 D2141 A1667 A1859 C4381 C4883 B1559 B1587 D2389 D2438 140 120 D2015 D1769 D1785 D2045 110 100 80 C3852A A1488A C3851A D2014 60 C3852 A1262 A1488 B1257 C3179 C3851 D1796 50 C4495 C3834 C3835 C4153 A1694 A1908 C4467 C5100 A1186 B1560 B1588 C2837 D2390 D2439 A1695 A1909 C4468 C5101 B1259 D2081 2 3 A1303 A1860 C3284 C4886 A1295 C3264 A1494 C3858 A1386A A1492 A1673 C3519A C3856 C4388 A1215 A1386 C2921 C3519 B1647 B1649 D2560 D2562 A1216 C2922 B1648 D2561 B1382 B1420 D2082 B1383 D2083 A1568 B1351 B1352 C4065 A2042 C4024 4 B1570 D2401 A1294 C3263 A1493 C3857 B1659 B1685 B1686 B1687 D2489 D2641 D2642 D2643 B1258 A1693 A1725 A1726 A1907 C4466 C4511 C4512 C5099 40 5 6 7 8 10 A1567 A1746 C4064 C5370 12 Collector Current IC(A) 2 C4139 C4298 C4434 C2023 C5333 250 230 Collector–Emitter Voltage VCEO(V) C5124 C4518 C4518A C5287 500 380 300 C3680 C4301 C5002 C5003 C4131 14 15 16 17 18 25 Transistor Selection Guide ■ Transistors for Switch Mode Power Supplies (for AC80 – 130V input) VCBO(V) VCEO(V) IC (A) 250 200 5 MT-25 (TO220) 5 7 500 400 C3832 FM20 (TO220F) 12 15 400 600 500 600 C3830 FM100 (TO3PF) C4138 C3833 C5071 C4139 C4434 C4140 C4296 C4297 C5271 C4073 C4418 C4662 C3890 C4130 10 18 5 7 6 10 3 MT–100 (TO3P) C4298 C5130 C4546 C4907 C3831 C5249 ■ Transistors for Switch Mode Power Supplies (for AC180 – 280V input) VCBO(V) 900 (1000) VCEO(V) IC (A) 550 3 5 600 10 14 MT-25 (TO220) FM20 (TO220F) C5239 C4517(A) C4518(A) C4020 800 FM100 (TO3PF) C5287 C3927 C4706 C4557 C4908 C3678 3 900 MT–100 (TO3P) C4304 5 7 C3679 C3680 C4299 C4445 C4300 C4301 3 Transistor Selection Guide Transistors for Audio Amplifiers ■ Single Transistors ● Single Emitter Part No. PC(W) 2SA1725/2SC4511 30 2SA1726/2SC4512 50 VCEO(V) 60 2SA1907/2SC5099 60 2SA1908/2SC5100 75 2SA1694/2SC4467 80 hFE(min) fT(MHz) Package FM20 (TO220F) MT-25 (TO220) 80 2SA1693/2SC4466 IC (A) 6 MT-100 (TO3P) FM100 (TO3PF) 120 8 MT-100 (TO3P) 50 2SA1909/2SC5101 80 140 10 2SA1673/2SC4388 85 180 15 2SA1695/2SC4468 100 140 10 2SA1492/2SC3856 130 180 15 2SA1493/2SC3857 150 20 FM100 (TO3PF) MT-100 (TO3P) 15 200 2SA1494/2SC3858 ● LAPT MT-200 (2-screw mount) 17 200 (Multi emitter for High Frequency) Part No. PC(W) VCEO(V) 2SA1860/2SC4886 80 2SA1186/2SC2837 100 2SA1303/2SC3284 125 2SA1386/2SC3519 130 160 2SA1386A/2SC3519A 130 180 2SA1294/2SC3263 130 230 35 2SA1215/2SC2921 150 160 50 2SA1216/2SC2922 200 180 150 IC (A) hFE(min) 14 50 10 60 14 50 50 ● Transistors 4 FM100 (TO3PF) 40 40 17 200 Package MT-100 (TO3P) 15 2SA1295/2SC3264 fT(MHz) MT-200 (2-screw mount) 35 230 with built in temperature compensation diodes for audio amplifier Part No. PC(W) VCEO(V) IC (A) hFE(min) Emitter Resistor(Ω) SAP09P/SAP09N 80 150 10 5000 0.22 SAP10P/SAP10N 100 150 12 5000 0.22 SAP16P/SAP16N 150 160 15 5000 0.22 Transistor Selection Guide ■ Darlington Transistors Part No. PC(W) 2SB1686 VCEO(V) IC (A) hFE(min) fT(MHz) 100 30 2SD2642 2SB1659 100 110 2SB1685 2SB1687 6 100 2SB1587 100 60 75 2SD2438 2SB1559 80 65 150 10 50 80 2SD2439 55 15 2SB1649 85 2SD2562 2SB1560 70 50 10 55 150 2SB1647 2SD2560 2SB1570 2SD2401 130 15 150 12 70 50 55 MT-200 (2-screw mount) 45 200 2SD2561 MT-100 (TO3P) 45 150 2SB1648 FM100 (TO3PF) 45 200 100 2SD2390 MT-100 (TO3P) 80 5000 2SB1588 FM100 (TO3PF) 65 8 80 2SD2389 MT-100 (TO3P) 60 60 2SD2643 MT-25 (TO220) 60 60 2SD2641 FM20 (TO220F) 60 50 2SD2589 Package 17 70 ■ Temperature compensation Transistors and Driver Transistors Part No. 2SC4495 PC(W) 25 2SC4883 VCEO(V) 50 hFE(min) fT(MHz) 3 500 40 2 60 120 Package Driver, Complement 2SA1859 180 2SC4883A 2SA1859 –2 –180 FM20 (TO220F) Driver, Complement 2SA1859A Driver, Complement 2SC4883 –150 20 Remarks Temperature compensation 150 20 2SA1859A IC (A) 60 60 Driver, Complement 2SC4883A 5 Reliability 4. Applications Considered on Reliability The word reliablity is an abstract term which refers to the degree to which equipment or components, such as semiconductor devices, are resistant to failure. Reliability can be and is often measured quantitatively. Reliability is defined as “whether equipment or components (such as a semiconductor device) under given conditions perform the same at the end of a given period as at the beginning.” 2. Reliability Function Collector Current Ic(A) Failure Rate (λ) us SOA(Safe Operating Area) Collector-Emitter Voltage Vce(V) Figure 2 SOA Initial Failure Random or Chance Failure Wear-out Failure Time (t) Figure 1 Bath Tub Curve These three types of failure describe “bathtub curve” shown in Figure 1. Infant failures can be attributed to trouble in the production process and can be eliminated by aging befor shipment to customers, stricter control of the production process and quality control measures. Semiconductor devices such as transistors, unlike electronic equipment, take a considerable amount of time to reach the stage where wear-out failure begins to occur. And, as shown in Figure 1 (b), they also last much longer than electronic equipment. This shows that the longer they are used the more stable they actually become. The reduction that occurs in random failures can be approximated by Weibull distribution, logarithmic normal distribution, or gamma distribution, but Weibull distribution best expresses the phenomenon that occurs with transistors. 3. Quantitative Expression of Reliability While there are many ways to quantitatively express reliability, two criteria, failure rate and life span, are generally used to define the reliability of semiconductors such as transistrors. a) Failure Rate (FR) Failure rate often refers to instantaneous failures or λ (t). In general of reliability theory, however, the cumulative failure rate, or Reliability Index, is r(t) ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(1) N⋅t Where N = Net quantity used, and r(t) = Net quantitiy failed after t hours If we assign t the arbitrary F⋅R= F ⋅ R = r × 100 (%/1,000 hours)⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(2) N In situations where the cumulative failure rate is small, failure is expressed in units of one Fit, 10-9 (failures/hours). b) Life Span(L) Life Span can be expressed in terms of average lifespan or as Mean Time Between Failure (MTBF), but assuming that random failure is shown by the Index Distribution [λ (t) = constant], then Life Span or L can be shown by the equation 1 L = ⋅ (hours)⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(3) F R 6 Loc Estimation wn Semiconductor Devices o akd Bre ary wer Po bl e wa (b) ond llo xA General Electronic Equipment or Components (a) S ec 1. Infant failure 2. Random failure 3. Wear-out failure Ma In general, there are three types of failure modes in electronic components: a) The type and specifications of our transistors and semiconductor devices vary depending on the application that will be required by their intended use. Customer should, therefore, determine which type will best suit their purposes. b) Note that high temperratures or long soldering periods must be avoided during soldering, as heat can be transmitted through external leads into the interior. This may cause deterioration if the maximum allowable temperature is exceeded. c) When using the trasistor under pulse operation or Max.Allowable inductive load, the Safe Current Operating Area (SOA) for the current and voltage must not be exceeded (Figure 2). Max. Allowable Voltage Vceo(Max) 1. Definition of Reliability d) The reliability of transistors and semiconductor devices is greatly affected by the stress of junction temperature. If we accept in general proceed in the form of Arrhenius equation, the relationship between the junction temperature Tj and lifespan L can be expressed with the following empirical formula n L = A+ B ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(4) Tj It is, hence, very important to derate the junction temperature to assure a high reliability rate. 5. Reliability Test Sanken bases its test methods and conditions on the following standards. Tests are conducted under these or stricter conditions, The details of these are shown in Table 1. • MIL-STD-202F (Test method for electrical and electronic components) • MIL-STD-750C (Test method for semiconductor equipment) • JIS C 7021 (Endurance test and environmental test method for individual semiconductor devices) • JIS C 7022 (Endurance test and environmental test method for integrated circuits of semiconductors) 6. Quality Assurance To ensure high quality and high reliability, quality control and production process control procedures are executed from the receipt of parts through the entire production process. Our quality assurance system is shown in Figure 3. Reliability Table 1: Test Methods and Conditions Details of the Testing Method LTPD(%) Continuous Operations Test Collector dissipation with maximum junction temperature is applied continuously at room temperature to judge lifespan and reliability under transistor operating conditions. *5/1000hrs Intermittent Operation Test Power equal to that used in the Continuous Operations Test is applied intermittently to test the transistor’s lifespan and reliability under on and off conditions. 5/1000hrs Test High Temperature Storage Test Low Temperature Storage Test Confirms the highest storage temperature and operating temperature of transistors. Confirms the lowest storage temperature of transistors. 5/1000hrs 5/1000hrs Moisture Resistance Test Tested at RH=85% and TA=85°C for the effects of the interaction between temperature and humidity, and the effects of surface insulation between electrodes and high temperature/high humidity. 5/1000hrs Heat Cycle Test Tested at Tstg min – Room temp. – Tstg max – Room temp. for 10 cycles (one cycle 30 min. –5 min. –30 min. –5 min.) to detect mechanical faults and characteristic changes caused by thermal expansion and shrinkage of the transistor. 5 Heat Shock Test Tested at 100°C (5 min.), 25°C (within 3 sec.), 0°C (5 min.) for 10 cycles to check for mechanical faults and characteristic changes caused by thermal expansion and shrinkage of transistor. 5 Soldering Heat Test Tested at 260 ± 5°C, 10 ± 1 sec, by dipping lead wire to 1.5mm from the seating plane in solder bath to check for characteristic changes caused by drastic temperature rises of exterior lead wire. 5 Vibrations Test Tested at amplitude 1.52mm, vibration frequency 10-55 Hz in directions of X, Y, Z, for 2 hours each (total 6 hours) to check for characteristic changes caused by vibration during operation and transportion. 5 Drop Test Tested by dropping 10 times from 75 cm height to check for mechanical endurance and characteristic changes caused by shock during handling. 5 ∗ Reliability Standard : 60% Figure 3 Quality Assurance System Material Purchasing Incoming Inspection Physical and Chemical Inspection Production Process Quality Control Production Process Control Specialized Tests for all units Marking Packing Shipping Inspection Shipment Periodical Quality Assurance Test 1. Operational Life (continuous) Test 2. Operational Life (intermittent) Test 3. High Temperature Storage Test 4. Low Temperature Storage Test 5. Moisture Resistance Test 6. Heat Cycle Test 7. Heat Shock Test 8. Soldering Heat Test 9. Vibaration Test 10. Drop Test 7 Reliability 7. Notes Regarding Storage, Characteristic Tests, and Handling Since reliability can be affected adversely by improper storage environment and handling methods during Characteristic tests, please observe the following cautions. a) Cautions for Storage 1. Ensure that storage conditions comply with the standard temperature (5 to 35°C) and the standard relative humidity (arround 40 to 75%) and avoid storage locations that experience extreme changes in temperature or humidity. 2. Avod locations where dust or harmful gases are present, and avoid direct sunlight. 3. Reinspect for rust in leads and solderbility that have been stored for a long time. b) Cautions for Characteristic Tests and Handling 1. When characteristic tests are carried out during inspection testing and other standard test periods, protect the transistor from surges of power from the testing device, shorts between the transistor and the heatsink c) Silicone Grease When using a heatsink, please coat the back surface of the transistor and both surfaces of the insulating plate with a thin layer of silicone grease to improve heat transfer between the transistor and the heatsink. Recommended Silicone Grease • G-746 (Shin-Etsu Chemical) • YG6260 (GE Toshiba Silicone) • SC102 (Dow Corning Toray Silicone) d) Torque when Tightening Screws Thermal resistance increases when tightening torque is small, and radiation effects are decreased. When the torque is too high, the screw can cut, the heatsink can be deformed, and/or distortion can arise in the product’s frame. To avoid these problems, Table 2 shows the recommended tightening torques for each product type. Table 2. Screw Tightening Torques Package Screw Tightening Torque MT25 (TO-220) 0.490 to 0.686 N · m (5 to 7kgf · cm) FM20 (TO-220 Full Mold) 0.490 to 0.686 N · m (5 to 7kgf · cm) MT100 (TO-3P) 0.686 to 0.822 N · m (7 to 9kgf · cm) FM100 (TO-3P Full Mold) 0.686 to 0.822 N · m (7 to 9kgf · cm) MT200 ( two-point mount) 0.686 to 0.822 N · m (7 to 9kgf · cm) 2GR ( one-point mount) 0.686 to 0.822 N · m (7 to 9kgf · cm) e) Soldering Temperature In general, the transistor is subjected to high temperatures when it is mounted on the printed circuit board, whether from flow solder from a solderbath, or, in hand operations from a soldering iron. The testing method and test conditions (JIS-C-7021 standards) for a transistor’s heat resistance during soldering are: At a distance of 1.5mm from the transistor’s main body, apply 260°C for 10 seconds, and 350°C for 3 seconds. However, please stay well within these limits and for as short a time as possible during actual soldering. 8 Reliability ■ Temperature Derating in Safe Operating Area Flange (case) temperature is typically described as 25°C, but it must be derated subject to the operating temperature. This derating curve is determined by manufacturing conditions of devices, materials used etc. and in case of a silicon transistor, breakdown voltage and DC Current Gain are significantly deteriorated in the temperature range of 260°C to 360°C. Hence, the collector current must be derated by using the derating curve in Fig.2 where the breakdown point is set at 260°C. Pc 100 lim re a B S/ B 50 lim itin g ar ea rea rea ga ga itin lim Tc=25°C S/ itin lim Pc Collector Current Ic (A) ga Collector Current Derating coefficient DF (%) itin 0 0 50 Collector-Emitter Voltage VCE (V) 100 150 200 250 300 Case Temp Tc (°C) Fig.1 Safe Operating Area Fig.2 Derating Curve of Safe Operating Area Derating coefficient is obtained from temperature in Fig.2 and it must be applied to the current value of the safe operating area in order to obtain the derated current. ■ Accessories ✩ Sanken Transistors do not include accessories. Accessories may be attached at a cost if requested. ✩ Sanken transistor case is a standard size, and can be used with any generally sold accessories. • Insulater: Mica, with a thickness of 0.06mm, +0.045 –0.005 allowance Type Name:Mold(14)Mica Type Name:Mold(9)Mica 3.1 20.0 ±0.1 12.0±0.1 ±0.1 10.0 +0.2 –0 7.0 14.0±0.1 2.5±0.2 5.0±0.1 19.4±0.1 6.0±0.2 3.7±0.1 2–ø3.2 +0.1 –0 ø3.2 +0.1 –0 ø3.75 +0.1 –0 24.0±0.1 Type Name:Mold(10)Mica • Insulation Bush for MT-25 (TO220) R0.5 7.0 ±0.1 24.0 1.5±0.2 24.38±0.1 +0.2 –0 R0.5 39.0±0.1 R0.5 9 Switching Characteristics ■ Typical Switching Characteristics (Common Emitter) VCC RL IC VB2 VBB1 (V) (Ω) (A) (V) (V) VBB2 IB1 IB2 (V) (A) (A) tr (µs) tstg (µs) tf (µs) ■Switching Characteristics Test Circuit/Measurement Wave Forms 20µs IC –VCC R2 Base Current 0 0 IB1 0 IB2 +VBB2 PNP IB2 IB1 0 IC 0 Collector Current 0.1IC D.U.T 50µs 0.9IC R1 ton –VBB1 tstg tf RL 0 GND 50µs Base Current 0 VCC R1 0 IB1 IC 0 IB2 +VBB1 NPN IB1 Collector 0.9IC Current 0.1IC 0 IC D.U.T IB2 R2 0 20µs –VBB2 GND ton tstg tf RL 0 Symbols Symbol Item Definition VCBO Collector-Base Voltage DC Voltage between Collector and Base when Emitter is open VCEO Collector-Emitter Voltage Voltage between Collector and Emitter when Base is open and voltage is reversely applied to Collector junction VEBO Emitter-Base Voltage DC voltage between Emitter and Base when Collector is open IC Collector Current DC current passing through Collector electrode IB Base Current DC current passing through Base electrode PC Collector Power Dissipation Power consumed at Collector junction Tj Operating Junction Temperature Maximum allowable temperature value at absolute maximum ratings Tstg Storage Temperature Maximum allowable range of ambient temperature at non-operation ICBO Collector Cutoff Current Collector current when Emitter is open and a specified reverse voltage is applied between Collector and Base IEBO Emitter Cutoff Current Emitter current when Collector is open and a specified reverse voltage is applied between Emitter and Base V(BR)CEO Collector-Emitter Saturation Voltage Breakdown voltage between Collector and Emitter when Base is open hFE DC Current Gain Ratio of DC output current and DC input current at a specified voltage and current (Emitter common) VCE(sat) Collector-Emitter Saturation Voltage DC voltage between Collector and Emitter under specified saturation conditions VBE(sat) Base-Emitter Saturation Voltage DC voltage between Base and Emitter under specified saturation conditions VFEC Emitter-Collector Diode Forward Voltage Diode forward voltage between Emitter and Collector when Base is open fT Cut-off Frequency Frequency at the specified voltage and current where hFE is 1 (0dB) Cob Collector Junction capacitance Junction capacitance between collector and Base at a specified voltage and frequency • Ta=25°C unless otherwise specified. 10 2SA1186 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837) ICBO VCB=–150V –100max µA V IEBO VEB=–5V –100max µA IC=–25mA –150min V VEBO –5 V V(BR)CEO IC –10 A hFE VCE=–4V, IC=–3A IB –2 A VCE(sat) IC=–5A, IB=–0.5A PC 100(Ta=25°C) W fT Tj 150 °C COB –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) V VCE=–12V, IE=1A 60typ MHz VCB=–80V, f=1MHz 110typ pF VB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –60 12 –5 5 –500 500 0.25typ 0.8typ 0.2typ 0 0 –1 –2 –3 0 –4 0 –0.5 –1.0 –1.5 (V C E =–4V) 200 Transient Thermal Resistance DC C urrent G ain h FE 125˚C 25˚C 100 Typ 50 –5 –1 –10 –30˚C 50 30 –0.02 Collector Current I C (A) –0.1 –0.5 f T – I E Characteristics (Typical) ) emp p) eT Cas ˚C ( –2 –1 –5 –10 3 1 0.5 0.2 1 10 Collector Current I C (A) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) si nk M aximum Power Dissip ation P C (W) 50 at Collector-Emitter Voltage V C E (V) –200 he –100 ite –10 fin –0.2 –2 In Emitter Current I E (A) 10 Without Heatsink Natural Cooling ith –0.5 1 C –1 20 0.1 D W 40 –5 ms T yp 10 Cu t-of f Fr eque ncy f T ( MH Z ) –10 60 0 0.02 100 –30 80 Collecto r Cur rent I C (A) DC Curr ent Gain h FE –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 300 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –2.0 Base Current I B (A) h FE – I C Characteristics (Typical) 20 –0.02 p) –2 –5A Collector-Emitter Voltage V C E (V) 100 –4 Tem –1 –30 I B =–20m A –2 I C =–10A Tem –40mA se –4 –6 se –60mA –2 (Ca –8 0m A –6 –8 ˚C mA –120 A 0 1 – 0m (V C E =–4V) 125 –1 1.4 E –10 Collector Current I C (A) A 5.45±0.1 C I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) θ j - a ( ˚ C/W) –4 m 0.65 +0.2 -0.1 Weight : Approx 6.0g a. Part No. b. Lot No. –3 Collector-Emitter Saturation Voltage V C E (s at) (V ) A m 00 Collector Current I C (A) –8 00 2 3 B IC (A) –2 ø3.2±0.1 5.45±0.1 RL (Ω) A 60m 2.0±0.1 1.05 +0.2 -0.1 VCC (V) I C – V CE Characteristics (Typical) 4.8±0.2 b –2.0max ■Typical Switching Characteristics (Common Emitter) –10 a Ca Tstg 50min∗ C( –150 25˚ VCEO 15.6±0.4 9.6 1.8 V –150 5.0±0.2 Unit 2.0 Ratings VCBO External Dimensions MT-100(TO3P) (Ta=25°C) Conditions Unit 4.0 ■Electrical Characteristics Symbol Ratings 19.9±0.3 Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 20.0min LAPT 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 11 2SA1215 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921) ■Electrical Characteristics ICBO Ratings Unit VCB=–160V –100max µA 36.4±0.3 24.4±0.2 VEB=–5V –100max µA IC=–25mA –160min V VCEO –160 V IEBO VEBO –5 V V(BR)CEO IC –15 A hFE VCE=–4V, IC=–5A 50min∗ IB –4 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V PC 150(Tc=25°C) W fT VCE=–12V, IE=2A 50typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 400typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 2-ø3.2±0.1 7 a b 5.45±0.1 VCC (V) RL (Ω) IC (A) VB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –60 12 –5 5 –500 500 0.25typ 0.85typ 0.2typ 0 0 –1 –2 –3 0 –4 0 –0.2 –0.4 –0.6 –0.8 (V C E =–4V) 200 25˚C 100 –30˚C 50 30 –0.02 –5 –10 –15 Transient Thermal Resistance DC Curr ent Gain h FE Typ 50 Collector Current I C (A) –0.1 –0.5 ) p) mp) e Te –2 –1 –5 –10 –15 em 2 1 0.5 0.1 1 10 Collector Current I C (A) f T – I E Characteristics (Typical) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 160 10 m C –5 si nk Without Heatsink Natural Cooling at –0.5 80 he –1 120 ite 20 D fin 40 –10 In Collector Curr ent I C (A) p ith Ty s 60 W Ma xim um Powe r Dissipat io n P C (W) –40 80 Cut- off F req uency f T ( MH Z ) DC Curr ent Gain h FE 125˚C –1 –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 200 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 10 –0.02 eT –5A Collector-Emitter Voltage V C E (V) 100 –5 Cas I C =–10A Cas –1 ˚C ( I B =–20mA Weight : Approx 18.4g a. Part No. b. Lot No. –10 ˚C ( –50mA –4 E (V C E =–4V) 125 –10 0mA –8 –2 θ j- a ( ˚C/W) Collector Current I C (A) mA –1 50 m A C –15 Collector Current I C (A) –200 –12 3.0 +0.3 -0.1 I C – V BE Temperature Characteristics (Typical) –3 Collector-Emitter Saturation Voltage V C E (s at) (V ) A A A m A 0m 0m 0m 0m 50 –60 –50 –40 –30 –7 A 0.65 +0.2 -0.1 5.45±0.1 B V CE ( sat ) – I B Characteristics (Typical) –16 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 9 21.4±0.3 20.0min Tstg 6.0±0.2 2.1 –30 V External Dimensions MT-200 (Ta=25°C) Conditions emp –160 VCBO Symbol se T Unit (Ca Ratings 25˚C ■Absolute maximum ratings (Ta=25°C) Symbol Application : Audio and General Purpose 4.0max LAPT 40 Without Heatsink 0 0.02 0.1 1 Emitter Current I E (A) 12 10 –0.2 –2 –10 –100 Collector-Emitter Voltage V C E (V) –200 5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SA1216 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922) Ratings Unit VCBO VCB=–180V –100max µA VEB=–5V –100max µA IC=–25mA –180min V 24.4±0.2 VCEO –180 V IEBO VEBO –5 V V(BR)CEO IC –17 A hFE VCE=–4V, IC=–8A 30min∗ IB –5 A VCE(sat) IC=–8A, IB=–0.8A –2.0max V PC 200(Tc=25°C) W fT VCE=–12V, IE=2A 40typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C ∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) 2-ø3.2±0.1 7 21.4±0.3 b IC (A) VB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –40 4 –10 5 –1 1 0.3typ 0.7typ 0.2typ I C – V CE Characteristics (Typical) –50mA I B =–20mA 0 –1 –2 –3 –4 0 –0.8 0 –1.0 0 –5 125˚C 100 25˚C –30˚C 50 10 –0.02 –10 –17 –0.1 f T – I E Characteristics (Typical) ) –2 –2.4 θ j-a – t Characteristics –0.5 –1 –5 –10 –17 2 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) e T emp –1 Base-Emittor Voltage V B E (V) 200 DC Cur rent Gain h F E 50 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 200 10 m Emitter Current I E (A) 10 –0.2 –2 –10 –100 Collector-Emitter Voltage V C E (V) –300 nk 1 si 0.1 at 0 0.02 Without Heatsink Natural Cooling he –0.5 120 ite –1 fin –5 160 In 20 DC –10 ith Collect or Cur ren t I C (A) s T 40 yp W M aximum Power Dissipa ti on P C (W) –50 60 Cu t-off Fre quen cy f T (MH Z ) DC Curr ent Gain h F E Typ –1 –0.6 (V C E =–4V) 300 –0.5 –0.4 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) –0.1 –0.2 Base Current I B (A) h FE – I C Characteristics (Typical) 10 –0.02 e T em p) Tem p) –5A 0 Collector-Emitter Voltage V C E (V) 100 –5 I C =–10A θ j - a (˚ C/W) 0 –1 –10 Cas –5 –2 Cas –100mA –15 ˚C( –150mA (V C E =–4V) –17 125 A –2 00 mA –10 –3 Collector Current I C (A) –3 00 m E I C – V BE Temperature Characteristics (Typical) Transient Thermal Resistance 5A –1 A 00 m A –5 –1. –7 mA 3.0 +0.3 -0.1 5.45±0.1 C Weight : Approx 18.4g a. Part No. b. Lot No. V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) –15 0 –40 0.65 +0.2 -0.1 1.05 +0.2 -0.1 B RL (Ω) A 2 3 5.45±0.1 VCC (V) m 00 9 a ■Typical Switching Characteristics (Common Emitter) –17 2.1 ˚C( Tstg 6.0±0.2 36.4±0.3 –30 V Conditions ase –180 VCBO External Dimensions MT-200 (Ta=25°C) SymboI C(C Unit 25˚ Ratings 4.0max ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol Application : Audio and General Purpose 20.0min LAPT 80 40 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 13 2SA1262 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3179) Ratings Unit V ICBO VCB=–60V –100max µA V IEBO VEB=–6V –100max µA –6 V V(BR)CEO IC=–25mA –60min V –4 A hFE VCE=–4V, IC=–1A 40min VCEO –60 VEBO IC 10.2±0.2 –1 A VCE(sat) IC=–2A, IB=–0.2A –0.6max V PC 30(Tc=25°C) W fT VCE=–12V, IE=0.2A 15typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 90typ pF –55 to +150 °C IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –20 10 –2 –10 5 –200 200 0.25typ 0.75typ 0.25typ I B =–5mA 0 –1 –2 –3 –4 –5 –6 –0.5 –0.1 –0.5 0 –1 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 500 100 50 –1 25˚C 100 –30˚C 50 20 –0.02 –4 Transient Thermal Resistance D C Cur r ent Gai n h F E Typ –0.1 f T – I E Characteristics (Typical) –1 –4 ) 10 at si nk M aximum Po wer Dissipat io n P C (W) he 10 ite Without Heatsink Natural Cooling fin –0.5 20 In –1 ith s C W s D 0m Collector Cur rent I C (A) s m 10 20 1000 P c – T a Derating 1m 10 30 100 30 –5 Typ mp) (Cas e Tem p) emp 1 Time t(ms) –10 40 1 Safe Operating Area (Single Pulse) 50 –1.5 5 0.7 (V C E =–12V) 60 –1.0 θ j-a – t Characteristics Collector Current I C (A) Collector Current I C (A) Cut- off F req uency f T (M H Z ) DC Curr ent Gain h F E 125˚C –0.5 –0.5 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 Base Current I B (A) h FE – I C Characteristics (Typical) e Te –1A 0 –0.1 Collector-Emitter Voltage V C E (V) 20 –0.01 eT –1 I C =–3A –2A θ j- a ( ˚ C/W) 0 –0.5 –2 –30˚C –10mA –1 –3 Cas –20mA –2 –1.0 (Cas –30mA ˚C ( –40m A –3 (V C E =–4V) –4 –1.5 125 –50m A Weight : Approx 2.6g a. Part No. b. Lot No. Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) –8 A 1.4 I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) –4 2.5 B C E RL (Ω) –60m 1.35 2.5 VCC (V) A b 0.65 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 0m 2.0±0.1 ø3.75±0.2 a 25˚C Tstg 12.0min IB 4.8±0.2 3.0±0.2 –60 16.0±0.7 VCBO External Dimensions MT-25(TO220) (Ta=25°C) Conditions Unit 8.8±0.2 ■Electrical Characteristics Symbol Ratings Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 10 Without Heatsink 0 0.005 0.01 0.05 0.1 0.5 Emitter Current I E (A) 14 1 3 –0.1 –2 2 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SA1294 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3263) ICBO VCB=–230V –100max µA V IEBO VEB=–5V –100max µA IC=–25mA –230min V –5 V V(BR)CEO IC –15 A hFE VCE=–4V, IC=–5A 50min∗ IB –4 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V PC 130(Tc=25°C) W fT VCE=–12V, IE=2A 35typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) 19.9±0.3 VEBO VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –60 12 –5 –10 5 –500 500 0.35typ 1.50typ 0.30typ I B =–20mA 0 0 –1 –2 –3 –1 –5A 0 –4 0 Collector-Emitter Voltage V C E (V) –0.5 –1.0 –1.5 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 200 –0.5 –1 25˚C 100 –30˚C 50 10 –0.02 –5 –10 –15 Transient Thermal Resistance DC C urrent G ain h FE Typ 50 Collector Current I C (A) –0.1 –0.5 –1 –5 –10 –15 0.5 0.1 1 10 s he at si nk Collector Curr ent I C (A) ite Without Heatsink Natural Cooling fin –0.5 In –1 100 ith DC –5 W Ma ximum Po we r Dissipa ti on P C (W) m 50 –0.1 0 0.02 0.1 1 Emitter Current I E (A) 10 –0.05 –3 1000 2000 P c – T a Derating –10 20 100 Time t(ms) 130 10 p mp) 1 –40 Ty –2.5 3 Safe Operating Area (Single Pulse) 60 –2 θ j-a – t Characteristics (V C E =–12V) 40 –1 Collector Current I C (A) f T – I E Characteristics (Typical) Cut-o ff F requ ency f T (MH Z ) DC C urrent G ain h FE 125˚C –0.1 0 Base-Emittor Voltage V B E (V) (V C E =–4V) 10 –0.02 0 –2.0 Base Current I B (A) h FE – I C Characteristics (Typical) 100 –5 I C =–10A eTe –50mA Cas –5 –10 mp ) emp ) –1 00 mA –2 (V C E =–4V) eTe A mA 200 –15 Cas – 0m – 3 ˚C ( –30 –10 1.4 E I C – V BE Temperature Characteristics (Typical) 125 mA 5.45±0.1 C V CE ( sat ) – I B Characteristics (Typical) θ j- a ( ˚ C/W) 00 0.65 +0.2 -0.1 Weight : Approx 6.0g a. Part No. b. Lot No. Collector Current I C (A) A –5 Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (sa t) (V ) –3 .0A –2 .0 A .0 –1 2 3 B IC (A) 5A ø3.2±0.1 5.45±0.1 RL (Ω) . –1 2.0±0.1 1.05 +0.2 -0.1 VCC (V) –15 4.8±0.2 b ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) a seT Tstg 15.6±0.4 9.6 1.8 V 5.0±0.2 Unit (Ca –230 Ratings ˚C ( VCEO Conditions –30 –230 External Dimensions MT-100(TO3P) (Ta=25°C) Symbol 2.0 VCBO ■Electrical Characteristics 4.0 Unit 25˚C Ratings Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 20.0min LAPT Without Heatsink –10 –100 Collector-Emitter Voltage V C E (V) –300 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 15 2SA1295 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264) Ratings Unit ICBO VCB=–230V –100max µA 36.4±0.3 24.4±0.2 VEB=–5V –100max µA IC=–25mA –230min V VCEO –230 V IEBO VEBO –5 V V(BR)CEO IC –17 A hFE VCE=–4V, IC=–5A 50min∗ IB –5 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V PC 200(Tc=25°C) W fT VCE=–12V, IE=2A 35typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) 2-ø3.2±0.1 7 9 21.4±0.3 20.0min Tstg a b 2 3 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –60 12 –5 –10 5 –500 500 0.35typ 1.50typ 0.30typ 0mA –200 mA –1 00 mA –5 –50mA I B =–20mA 0 0 –1 –2 –3 –15 –2 –1 I C =–10A –5 –5A 0 –4 0 –0.5 Collector-Emitter Voltage V C E (V) –1.0 –1.5 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 200 –0.5 –1 –5 25˚C 100 50 –30˚C 10 –0.02 –10 –17 Transient Thermal Resistance DC Cur rent Gain h FE Typ 50 –0.8 –0.1 –0.5 –1 –1.6 f T – I E Characteristics (Typical) –2.4 –3.2 –5 –10 –17 θ j-a – t Characteristics 2 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 60 200 –40 D 1 Emitter Current I E (A) 16 10 –0.05 –3 –10 –100 Collector-Emitter Voltage V C E (V) –300 nk 0.1 si 0 0.02 at Without Heatsink Natural Cooling –0.1 he –0.5 120 ite 20 –1 fin p 160 In Ty –5 ith 40 s C W Collect or Cur ren t I C (A) –10 m M aximum Power Dissipa ti on P C (W) 10 Cu t-of f Fr eque ncy f T ( MH Z ) DC Cur rent Gain h F E 125˚C –0.1 0 Base-Emittor Voltage V B E (V) (V C E =–4V) 10 –0.02 0 –2.0 Base Current I B (A) h FE – I C Characteristics (Typical) 100 –10 p) –30 –10 mA Weight : Approx 18.4g a. Part No. b. Lot No. –17 em Collector Current I C (A) 0 –50 E (V C E =–4V) – 3 eT – A 1.0 125 ˚C ( Cas 25˚C A Collector Current I C (A) .5 –1 θ j- a ( ˚C/W) –15 0A C I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) A –3 .0 . –2 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) –17 0.65 +0.2 -0.1 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 6.0±0.2 2.1 mp) V Conditions e Te –230 External Dimensions MT-200 (Ta=25°C) Symbol Cas Unit VCBO ■Electrical Characteristics (Ta=25°C) Ratings ˚C ( Symbol –30 ■Absolute maximum ratings Application : Audio and General 4.0max LAPT 80 40 5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SA1303 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3284) V ICBO VCB=–150V –100max µA V IEBO VEB=–5V –100max µA IC=–25mA –150min V VEBO –5 V V(BR)CEO IC –14 A hFE VCE=–4V, IC=–5A 50min IB –3 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V VCE=–12V, IE=2A 50typ MHz VCB=–10V, f=1MHz 400typ pF PC 125(Tc=25°C) W fT Tj 150 °C COB –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –60 12 –5 –10 5 –500 500 0.25typ 0.85typ 0.2typ 0 0 –1 –2 –3 0 0 –0.2 –0.4 –0.6 –0.8 (V C E =–4V) 200 25˚C 100 –30˚C 50 30 –0.02 –5 –10 –14 Transient Thermal Resistance DC Cur rent Gain h FE Typ 50 Collector Current I C (A) –0.1 –0.5 emp ) p) Tem eT Cas ˚C ( –1 –2 –1 –5 θ j-a – t Characteristics –10 –14 3 1 0.5 0.1 1 10 Collector Current I C (A) f T – I E Characteristics (Typical) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) Co lle ctor Cu rr ent I C (A) Maxim um Power Dissip ation P C (W) Collector-Emitter Voltage V C E (V) –200 nk –100 si –10 at –0.2 –3 he Emitter Current I E (A) 10 ite 1 fin 0.1 Without Heatsink Natural Cooling In –1 100 ith –5 –0.5 0 0.02 C W 20 s 40 s p 0m Ty D 1m –10 s 60 130 m –40 10 80 10 Cut- off F req uency f T (MH Z ) DC Cur rent Gain h FE 125˚C –1 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 200 –0.5 0 –1.0 Base Current I B (A) (V C E =–4V) –0.1 se –5A –4 h FE – I C Characteristics (Typical) 20 –0.02 (Ca I C =–10A Collector-Emitter Voltage V C E (V) 100 –5 ˚C –1 –10 –30 I B =–20mA –2 25˚ –50mA –4 –14 125 –10 0mA –8 1.4 E (V C E =–4V) –3 Collector Current I C (A) –1 50 m A 5.45±0.1 C Weight : Approx 6.0g a. Part No. b. Lot No. θ j- a ( ˚C/W) 00 –6 mA 00 m A –7 mA 0.65 +0.2 -0.1 I C – V BE Temperature Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Collector Current I C (A) –200 2 3 B RL (Ω) –12 ø3.2±0.1 5.45±0.1 VCC (V) A A m m mA 00 00 00 –3 –5 –4 2.0±0.1 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 4.8±0.2 b p) Tstg a Tem –150 ase VCEO 15.6±0.4 9.6 C (C –150 1.8 Unit 5.0±0.2 Ratings 2.0 Conditions VCBO External Dimensions MT-100(TO3P) (Ta=25°C) Symbol Unit 4.0 ■Electrical Characteristics (Ta=25°C) Ratings 19.9±0.3 Symbol 4.0max ■Absolute maximum ratings Application : Audio and General Purpose 20.0min LAPT 50 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 17 2SA1386/1386A Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A) –180 V(BR)CEO –180min –160min IC=–25mA IB –4 A hFE VCE=–4V, IC=–5A 50min∗ PC 130(Tc=25°C) W VCE(sat) IC=–5A, IB=–0.5A –2.0max Tj Tstg 150 °C fT VCE=–12V, IE=2A 40typ MHz °C COB VCB=–10V, f=1MHz 500typ pF IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –40 4 –10 –10 5 –1 1 0.3typ 0.7typ 0.2typ m A –3 00 m A –200mA –10 –150mA –100mA –5 –50mA I B =–20mA 0 0 –1 –2 –3 –3 –15 –2 –1 0 0 –0.2 –0.4 –0.6 –0.8 –1 –5 –10 –15 Transient Thermal Resistance DC Curr ent Gain h FE 0 –1 125˚C 100 25˚C –30˚C 50 20 –0.02 –0.1 Collector Current I C (A) –0.5 θ j-a – t Characteristics –1 –5 –10 –15 3 1 0.5 0.1 1 10 Collector Current I C (A) f T – I E Characteristics (Typical) –2 Base-Emittor Voltage V B E (V) (V C E =–4V) DC Curr ent Gain h FE –0.5 0 –1.0 h FE – I C Temperature Characteristics (Typical) Typ –0.1 –5 Base Current I B (A) 200 10 –0.02 –10 I C =–10A (V C E =–4V) 100 (V C E =–4V) –5A –4 h FE – I C Characteristics (Typical) 1.8 I C – V BE Temperature Characteristics (Typical) Collector-Emitter Voltage V C E (V) 300 1.4 E Weight : Approx 6.0g a. Part No. b. Lot No. ˚C ( – 0 40 C 125 A 5.45±0.1 B Collector Current I C (A) Collector Current I C (A) –7 00 –5 m 00 5.45±0.1 0.65 +0.2 -0.1 V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) m A –15 2 3 1.05 +0.2 -0.1 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) RL (Ω) I C – V CE Characteristics (Typical) 2.0 V VCC (V) ø3.2±0.1 b –55 to +150 ■Typical Switching Characteristics (Common Emitter) a V mp) A e Te –15 (Cas IC V µA –100max VEB=–5V p) IEBO mp) V 2.0±0.1 –30˚C –5 4.8±0.2 5.0±0.2 –160 VCB= VEBO 15.6±0.4 9.6 µA em V –100max eT –180 ICBO –100max e Te –160 V Cas VCEO –180 (Cas –160 Conditions Symbol 25˚C VCBO Unit 4.0 2SA1386 2SA1386A θ j - a (˚C /W ) Symbol External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit 2SA1386A 2SA1386 19.9±0.3 Ratings 4.0max ■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics Application : Audio and General Purpose 20.0min LAPT 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 130 –40 10 DC 0.1 1 Emitter Current I E (A) 18 10 –0.05 –3 –10 –50 –100 Collector-Emitter Voltage V C E (V) 2 –200 nk 1 0 0.02 si –0.1 at 1.2SA1386 2.2SA1386A he Without Heatsink Natural Cooling ite –1 –0.5 100 fin 20 –5 In Collecto r Cur ren t I C ( A) p ith Ty W Cut-o ff Fr eque ncy f T (MH Z ) –10 40 ms Ma xim um Powe r Dissipation P C ( W) 60 50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SA1488/1488A Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3851/A) ICBO VCB= –60 VEBO –6 V IEBO IC –4 A V(BR)CEO IB –1 A hFE PC 25(Tc=25°C) W VCE(sat) Tj 150 °C fT –55 to +150 °C COB VCB=–10V, f=1MHz Tstg VEB=–6V µA V –80 µA –100max IC=–25mA –60min –80min 40min IC=–2A, IB=–0.2A –0.5max V VCE=–12V, IE=0.2A 15typ MHz 90typ pF ø3.3±0.2 a b V VCE=–4V, IC=–1A 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –12 6 –2 –10 5 –200 200 0.25typ 0.75typ 0.25typ –10mA –1 I B =–5mA 0 0 –1 –2 –3 –4 –5 –0.5 –1 I C =–3A –1A 0 –0.1 –6 –0.5 –0.1 –0.5 0 –1 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 500 100 50 –1 Transient Thermal Resistance DC Curr ent Gain h FE Typ 25˚C 100 –30˚C 50 20 –0.02 –4 –0.1 f T – I E Characteristics (Typical) –1 –4 1 1 10 30 100ms Collect or Cur ren t I C (A) 50 10 1m 10 m s M aximu m Power Dissi pation P C (W) –5 20 1000 P c – T a Derating –10 30 100 Time t(ms) Safe Operating Area (Single Pulse) Typ –1.5 5 0.7 (V C E =–12V) 40 –1.0 θ j-a – t Characteristics Collector Current I C (A) Collector Current I C (A) Cu t-off Fre quen cy f T ( MH Z ) DC C urrent G ain h FE 125˚C 60 –0.5 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 Base Current I B (A) h FE – I C Characteristics (Typical) –0.1 –2 –2A Collector-Emitter Voltage V C E (V) 20 –0.01 –3 eT emp ) e Te mp) (Cas e Tem p) –20mA –2 –1.0 Cas –30mA (Cas –40m A –3 ˚C ( –50m A (V C E =–4V) –4 –1.5 125 A 25˚C –60m θ j - a (˚ C/W) A I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (sa t) (V ) Collector Current I C (A) –8 0m Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) –4 2.4±0.2 2.2±0.2 VCC (V) I C – V CE Characteristics (Typical) 4.0±0.2 V 0.8±0.2 V –80 4.2±0.2 2.8 c0.5 ±0.2 –80 –60 10.1±0.2 3.9 –60 VCEO Unit –30˚C VCBO Conditions Symbol Unit External Dimensions FM20 (TO220F) (Ta=25°C) Ratings 2SA1488 2SA1488A –100max –100max 8.4±0.2 ■Electrical Characteristics 16.9±0.3 Ratings Symbol 2SA1488 2SA1488A 13.0min ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose s DC –1 –0.5 Without Heatsink Natural Cooling –0.1 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 20 W ith In 150x150x2 1 00x 1 0 10 0x 2 fin ite he at si nk 50x50x2 Without Heatsink 2 0 0.005 0.01 –0.05 0.05 0.1 0.5 Emitter Current I E (A) 1 3 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 19 2SA1492 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3856) –100max µA V IEBO VEB=–6V –100max µA IC=–50mA –180min V V V(BR)CEO –15 A hFE VCE=–4V, IC=–3A 50min∗ –4 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V PC 130(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –40 4 –10 –10 5 –1 1 0.6typ 0.9typ 0.2typ I B =–20mA 0 –1 0 –2 –3 –1 I C =–10A 0 –4 0 –0.5 –1.0 –1.5 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 100 50 125˚C 25˚C 100 –30˚C 50 20 –0.02 –5 –10 –15 f T – I E Characteristics (Typical) –0.1 –0.5 –1 10 0.1 1 10 P c – T a Derating s C –100 Collector-Emitter Voltage V C E (V) –200 nk –10 si –0.1 –3 Without Heatsink Natural Cooling at –0.5 he –1 100 ite Collector Cur rent I C (A) –5 0m s s fin 10 D m In 10 1000 2000 ith 20 100 Time t(ms) W –10 Typ 20 0.5 M aximum Power Dissipa ti on P C ( W) 3m Emitter Current I E (A) –10 –15 1 130 10 1 –5 3 –40 30 –2 θ j-a – t Characteristics Safe Operating Area (Single Pulse) (V C E =–12V) 0.1 –1 Collector Current I C (A) Collector Current I C (A) 0 0.02 Transient Thermal Resistance DC Curr ent Gain h FE Typ Cut- off F re quen cy f T (MH Z ) DC Curr ent Gain h FE 300 –1 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –2.0 Base Current I B (A) h FE – I C Characteristics (Typical) –0.1 –5 –5A Collector-Emitter Voltage V C E (V) 10 –0.02 mp) Temp ) –50mA –5 –10 e Te –0 .1 A –2 Cas A ˚C ( – 0 .2 –10 125 4A (V C E =–4V) –15 – 3 θ j - a (˚C/W) –0. 1.4 E I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) 6A C Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) Collector Current I C (A) –1 A –0. 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) –15 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.2±0.1 b IB Tstg a 2.0±0.1 Temp) –6 IC 4.8±0.2 (Case VEBO 15.6±0.4 9.6 1.8 VCB=–180V 5.0±0.2 ICBO 19.9±0.3 V –30˚C –180 Unit (Case VCEO Ratings 25˚C –180 Conditions 2.0 VCBO External Dimensions MT-100(TO3P) (Ta=25°C) Symbol 4.0 Unit 4.0max ■Electrical Characteristics (Ta=25°C) Ratings Symbol 20.0min ■Absolute maximum ratings Application : Audio and General Purpose 50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SA1493 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857) –200 VCBO ■Electrical Characteristics Conditions Ratings Unit V ICBO VCB=–200V –100max µA VEB=–6V –100max µA IC=–50mA –200min V VCEO –200 V IEBO VEBO –6 V V(BR)CEO IC –15 A hFE VCE=–4V, IC=–5A 50min∗ IB –5 A VCE(sat) IC=–10A, IB=–1A – 3.0max V VCE=–12V, IE=0.5A 20typ MHz VCB=–10V, f=1MHz 400typ pF PC 150(Tc=25°C) W fT Tj 150 °C COB –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Tstg External Dimensions MT-200 (Ta=25°C) Symbol 6.0±0.2 36.4±0.3 24.4±0.2 2.1 2-ø3.2±0.1 9 7 Unit 21.4±0.3 Ratings a b 2 4.0max Symbol 20.0min ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 3 5.45±0.1 B VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –60 12 –5 –10 5 –500 500 0.3typ 0.9typ 0.2typ 0 –1 0 –2 –3 –10A –5A 0 –4 0 Collector-Emi tter Voltage V C E (V) 200 DC C urrent G ain h FE 100 50 –30˚C 50 20 –0.02 –5 –10 –15 –0.1 –0.5 –1 –5 –10 –15 0.1 1 10 m C s 10 0m s 10ms s 2000 si nk –300 80 at –100 he –10 Collector-Emitter Voltage V C E (V) ite Without Heatsink Natural Cooling fin –1 120 In –5 –2 1000 P c – T a Derating –0.1 10 100 Time t(ms) ith Co lle ctor Cu rr ent I C ( A) D –10 –0.5 emp) 0.5 W 10 (CaseT 1 160 3m Typ 1 2 –50 20 20 –2 θ j-a – t Characteristics Safe Operating Area (Single Pulse) 30 Emitter Current I E (A) –1 Collector Current I C (A) (V C E =–12V) 0.1 0 Base-Emittor Voltage V B E (V) 25˚C 100 f T – I E Characteristics (Typical) 0 0.02 0 –4 125˚C Collector Current I C (A) Cut- off F re quen cy f T ( MH Z ) DC C urrent G ain h FE Typ –1 –3 (V C E =–4V) 300 –0.5 –2 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) –0.1 –1 Base Current I B (A) h FE – I C Characteristics (Typical) 10 –0.02 –5 I C =–15A –30˚C –1 eTe mp) Temp ) I B =–5 0m A –5 –10 Cas –1 00 mA –2 (Case A ˚C ( –200m –10 125 mA (V C E =–4V) 25˚C –400 –15 Collector Current I C (A) mA θ j- a (˚C /W ) – 0 60 I C – V BE Temperature Characteristics (Typical) –3 Transient Thermal Resistance A E Weight : Approx 18.4g a. Part No. b. Lot No. Maximu m Power Dissip ation P C (W) 5A –1. Collector Current I C (A) –1 C V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V CE Characteristics (Typical) 3.0 +0.3 -0.1 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) –15 0.65 +0.2 -0.1 1.05 +0.2 -0.1 40 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 21 2SA1494 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858) ■Electrical Characteristics ICBO Ratings Unit VCB=–200V –100max µA 36.4±0.3 24.4±0.2 VEB=–6V –100max µA IC=–50mA –200min V VCEO –200 V IEBO VEBO –6 V V(BR)CEO IC –17 A hFE VCE=–4V, IC=–8A 50min∗ IB –5 A VCE(sat) IC=–10A, IB=–1A –2.5max V PC 200(Tc=25°C) W fT VCE=–12V, IE=1A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C ∗hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180) 2-ø3.2±0.1 7 a b 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –40 4 –10 –10 5 –1 1 0.6typ 0.9typ 0.2typ –50mA –5 I B =–20mA 0 –1 0 –2 –3 –4 –1 –10A 0 0 –1 –2 (V C E =–4V) 50 –5 25˚C 100 –30˚C 50 20 –0.02 –10 –17 –0.1 –0.5 f T – I E Characteristics (Typical) –5 –10 –17 10 3m s 10ms –100 Collector-Emitter Voltage V C E (V) –300 nk –10 si –2 at –0.1 10 he Without Heatsink Natural Cooling 120 ite –1 fin –5 160 In Collector Curr ent I C (A) C ith D W –10 –0.5 1000 s Ma xim um Powe r Dissipat io n P C (W) m s 10 100 P c – T a Derating 0m 20 Emitter Current I E (A) 1 Time t(ms) 10 Typ 1 0.1 200 20 0.1 0.5 –50 30 Cut- off Fr equ ency f T (MH Z ) –1 1 Safe Operating Area (Single Pulse) (V C E =–12V) –2 2 Collector Current I C (A) Collector Current I C (A) 22 Transient Thermal Resistance DC Curr ent Gain h FE DC Curr ent Gain h FE Typ 100 0 0.02 –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 125˚C –1 0 Base-Emittor Voltage V B E (V) 200 –0.5 0 –3 (V C E =–4V) 300 ) –5A Base Current I B (A) h FE – I C Characteristics (Typical) –0.1 –5 I C =–15A Collector-Emitter Voltage V C E (V) 10 –0.02 –10 Temp –1 00 m A –2 e Te mp) Temp ) A Weight : Approx 18.4g a. Part No. b. Lot No. –15 (Cas –200m –10 E (V C E =–4V) 125˚C 0mA Collector Current I C (A) Collector Current I C (A) –40 C –17 θ j - a (˚C /W) 0 Collector-Emitter Saturation Voltage V C E (s at) (V ) A .5 –60 –1 –15 mA 3.0 +0.3 -0.1 I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) –3 –1A 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) –17 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 9 21.4±0.3 20.0min Tstg 6.0±0.2 2.1 (Case V External Dimensions MT-200 (Ta=25°C) Conditions –30˚C –200 VCBO Symbol (Case Unit 25˚C Ratings 4.0max ■Absolute maximum ratings (Ta=25°C) Symbol Application : Audio and General Purpose 80 40 5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2000 2SA1567 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4064) A hFE µA –50min V VCE=–1V, IC=–6A 50min IC=–6A, IB=–0.3A –0.35max V –3 A VCE(sat) PC 35(Tc=25°C) W fT VCE=–12V, IE=0.5A 40typ MHz 150 °C COB VCB=–10V, f=1MHz 330typ pF –55 to +150 °C Tstg 13.0min IB Tj 1.35±0.15 1.35±0.15 5 0 –1 –2 –3 –4 –5 –0.5 0 –6 –10 –2 –100 –1000 (V C E =–1V) 500 125˚C D C Cur r ent Gai n h F E Typ 100 50 25˚C –30˚C 100 50 30 –0.02 –10 –0.1 f T – I E Characteristics (Typical) –1 –10 –0.4 0.3 1 10 s 1000 fin ite he 150x150x2 at si nk Without Heatsink Natural Cooling 20 In –0.5 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 30 ith –1 –0.05 –3 100 W Collector Cur rent I C (A) s 0m m DC –5 s –0.1 12 –1.2 P c – T a Derating 10 10 Typ 20 –1.0 Time t(ms) Maximu m Power Dissi pation P C (W) 1m 30 –0.8 0.5 –30 40 –0.6 35 –10 Cut- off Fr equ ency f T (M H Z ) p) 1 Safe Operating Area (Single Pulse) 50 Emitter Current I E (A) Tem 4 (V C E =–12V) 1 –0.2 Collector Current I C (A) Collector Current I C (A) 0 0.05 0.1 0 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 500 DC Curr ent Gain h F E 0 –3000 Base-Emittor Voltage V B E (V) (V C E =–1V) –1 –4 Base Current I B (mA) h FE – I C Characteristics (Typical) –0.1 –6 –2 Collector-Emitter Voltage V C E (V) 30 –0.02 –8 se 12A 0 –5mA –9A –10mA –2 –1.0 –6A –20mA –10 –3A –4 (V C E =–1V) –12 –1.5 –1A –40mA I C – V BE Temperature Characteristics (Typical) I C= – –60mA –6 0.2typ (Ca –2 –10 0m A –8 0.4typ ˚C A I B= –10 Collector Current I C (A) 0m 0.4typ Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) mA 00 –15 120 –120 I C – V CE Characteristics (Typical) –12 tf (µs) 125 –10 tstg (µs) Collector Current I C (A) –6 4 ton (µs) IB2 (mA) IB1 (mA) θ j- a (˚ C/W) –24 VBB2 (V) VBB1 (V) 2.4±0.2 2.2±0.2 Transient Thermal Resistance IC (A) RL (Ω) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) ø3.3±0.2 a b mp) –12 –100max 4.2±0.2 2.8 c0.5 e Te IC VEB=–6V IC=–25mA 10.1±0.2 (Cas V(BR)CEO µA 4.0±0.2 IEBO V –100max 0.8±0.2 V –6 VCB=–50V 3.9 –50 VEBO Conditions mp) VCEO Symbol –30˚C ICBO e Te V (Cas –50 Unit 25˚C Unit VCBO Symbol External Dimensions FM20 (TO220F) (Ta=25°C) Ratings ±0.2 ■Electrical Characteristics Ratings 8.4±0.2 ■Absolute maximum ratings (Ta=25°C) Application : DC Motor Driver, Chopper Regulator and General Purpose 16.9±0.3 LOW VCE (sat) 100x100x2 10 50x50x2 Without Heatsink –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 2 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 23 2SA1568 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4065) A IB –3 mA –60min V hFE VCE=–1V, IC=–6A 50min A VCE(sat) IC=–6A, IB=–0.3A –0.35max IECO=–10A –2.5max V 16.9±0.3 –60max V 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=–12V, IE=0.5A 40typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 330typ pF Tstg 3.9 PC 1.35±0.15 1.35±0.15 5 –1 –2 –3 –4 –5 0 –7 –10 –6 –100 Collector-Emitter Voltage V C E (V) –1000 (V C E =–1V) 300 125˚C D C Cur r ent Gai n h F E 100 25˚C –30˚C 100 10 10 2 –0.02 –10 –0.1 Collector Current I C (A) –1 –10 p) Tem 0.3 se 1 10 1000 s ite he 150x150x2 at si nk Without Heatsink Natural Cooling 20 fin –0.5 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 30 In Maximu m Power Dissi pation P C (W) 0m –1 –0.05 –3 100 ith 24 0.5 W Collector Cur rent I C (A) DC s –5 s –0.1 10 –1.2 P c – T a Derating m 20 –1.0 Time t(ms) 10 10 Typ 30 –0.8 35 1m 40 –0.6 1 Safe Operating Area (Single Pulse) –10 Emitter Current I E (A) –0.4 4 –30 1 –0.2 θ j-a – t Characteristics (V C E =–12V) 50 0 Collector Current I C (A) f T – I E Characteristics (Typical) Cut- off Fr equ ency f T (M H Z ) DC Curr ent Gain h F E Typ 0 0.05 0.1 0 –3000 h FE – I C Temperature Characteristics (Typical) 300 –1 –4 Base-Emittor Voltage V B E (V) (V C E =–1V) –0.1 –6 Base Current I B (mA) h FE – I C Characteristics (Typical) 2 –0.02 –8 –2 Transient Thermal Resistance Collector Current I C (A) I B= 0 A 0 –0.5 –9A –10mA –2 –3 A –20mA –1.0 –1A –4 –10 –6A –40mA (V C E =–1V) –12 –1.4 –12 –60mA I C – V BE Temperature Characteristics (Typical) I C= –8 –6 0.2typ ˚C –1 00 mA –2 –10 Collector-Emitter Saturation Voltage V C E (s a t) (V ) 0mA 00 mA –15 0.4typ V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) –12 0.4typ 120 –120 B C E (Ca –10 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) tstg (µs) 125 –6 4 ton (µs) IB2 (mA) IB1 (mA) Collector Current I C (A) –24 VBB2 (V) VBB1 (V) 2.4±0.2 2.2±0.2 θ j - a (˚C /W) IC (A) RL (Ω) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) ø3.3±0.2 a b mp) IC VEB=–6V IC=–25mA e Te V(BR)CEO 4.2±0.2 2.8 c0.5 (Cas IEBO V 10.1±0.2 4.0±0.2 V –6 –12 + µA 0.8±0.2 –60 VEBO –100max mp) VCEO VCB=–60V –30˚C ICBO e Te V Unit (Cas –60 Ratings 25˚C VCBO External Dimensions FM20 (TO220F) (Ta=25°C) Conditions ±0.2 Symbol Unit C Application : DC Motor Driver, Chopper Regulator and General Purpose ■Electrical Characteristics Ratings Symbol Equivalent curcuit 8.4±0.2 ■Absolute maximum ratings (Ta=25°C) B 13.0min Built-in Diode at C–E Low VCE (sat) E ( 250 Ω ) 100x100x2 10 50x50x2 Without Heatsink –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 2 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SA1667/1668 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382) VCB= VEBO –6 V IEBO IC –2 A V(BR)CEO –10max –10max µA –150 –200 V µA –10max VEB=–6V –150min IC=–25mA –200min –1 A hFE VCE=–10V, IC=–0.7A 60min PC 25(Tc=25°C) W VCE(sat) IC=–0.7A, IB=–0.07A –1.0max V Tj 150 °C fT VCE=–12V, IE=0.2A 20typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 60typ pF Tstg ø3.3±0.2 a b V IB 4.2±0.2 2.8 c0.5 4.0±0.2 10.1±0.2 0.8±0.2 ICBO V Unit ±0.2 V –200 Conditions Symbol External Dimensions FM20 (TO220F) 3.9 –150 Unit (Ta=25°C) Ratings 2SA1667 2SA1668 8.4±0.2 VCEO ■Electrical Characteristics 16.9±0.3 Ratings Symbol 2SA1667 2SA1668 VCBO –150 –200 13.0min ■Absolute maximum ratings (Ta=25°C) Application : TV Vertical Output, Audio Output Driver and General Purpose 1.35±0.15 1.35±0.15 ■Typical Switching Characteristics (Common Emitter) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 2.4±0.2 2.2±0.2 –100 –0.4 0 –2 –4 –6 –8 –1 –10 –100 (V C E =–10V) 400 100 –0.1 –1 Transient Thermal Resistance D C Cur r ent Gai n h F E Typ 25˚C –30˚C 100 30 –0.01 –2 Collector Current I C (A) –0.1 –1 –2 0.5 1 2 Temp) at 0x he si nk –100 1 00x 1 0 10 ite –10 Collector-Emitter Voltage V C E (V) 150x150x2 fin 1 In Without Heatsink Natural Cooling 1.2SA1667 2.2SA1668 20 ith M aximu m Power Dissipat io n P C (W) C W Collector Curr ent I C (A) s 2 Natural Cooling Silicone Grease Heatsink: Aluminum in mm s ms 1 –0.01 –1 1000 P c – T a Derating –0.1 10 –1.2 100 1m 20 5m D –1 20 ) 10 25 40 –1.0 Time t(ms) –5 30 –0.8 1 Safe Operating Area (Single Pulse) Typ –0.6 5 (V C E =–12V) 0.1 –0.4 Collector Current I C (A) f T – I E Characteristics (Typical) Cut- off Fr equ ency f T (M H Z ) D C Cur r ent Gai n h F E 125˚C Emitter Current I E (A) –0.2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 400 50 0 Base-Emittor Voltage V B E (V) (V C E =–10V) 0 0.01 0 –1000 Base Current I B (mA) h FE – I C Characteristics (Typical) 40 –0.01 –0.8 –0.4 I C =–2A –2 –1.2 –1A –0 .5A Collector-Emi tter Voltage V C E (V) –1.6 (Case –2 0 –10 –2 –30˚C I B =–5mA/Step (V C E =–10V) –3 Temp –1.2 I C – V BE Temperature Characteristics (Typical) mp) Collector Current I C (A) –1.6 0 0.5typ (Case A –0.8 1.5typ B C E e Te Collector-Emitter Saturation Voltage V C E (s at) (V ) –2.0 –5 0.4typ Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) V CE ( sa t ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) 0m 100 tstg (µs) (Cas 5 –10 ton (µs) IB2 (mA) 25˚C –1 20 IB1 (mA) 125˚C –20 VBB2 (V) VBB1 (V) Collector Current I C (A) IC (A) RL (Ω) θ j- a (˚C /W ) VCC (V) 50x50x2 Without Heatsink 2 2 –300 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 25 2SA1673 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4388) µA V IEBO VEB=–6V –10max µA V V(BR)CEO –15 A hFE –180min IC=–50mA VCE=–4V, IC=–3A 50min∗ V –4 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V PC 85(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C Tj Tstg ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –40 4 –10 –10 5 –1 1 0.6typ 0.9typ 0.2typ –50mA –5 I B =–20mA 0 0 –1 –2 –3 –1 I C =–10A 0 –4 0 –0.5 –1.0 –1.5 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 Typ 100 50 125˚C 25˚C 100 –30˚C 50 20 –0.02 –5 –10 –15 f T – I E Characteristics (Typical) –0.1 –0.5 –1 –5 –10 –15 1 10 100 P c – T a Derating m 0m s s s C –10 –100 Collector-Emitter Voltage V C E (V) –200 nk –0.1 –3 si 10 at –0.2 he Without Heatsink Natural Cooling ite –1 60 fin –2 80 In Collecto r Cur rent I C (A) D –5 –0.5 1000 2000 Time t(ms) ith 10 26 0.1 W 20 Emitter Current I E (A) 0.5 M aximu m Power Dissip ation P C (W) 10 10 –10 Typ 1 1 100 3m 0.1 3 –40 30 –2 θ j-a – t Characteristics Safe Operating Area (Single Pulse) (V C E =–12V) 0 0.02 –1 Collector Current I C (A) Collector Current I C (A) Cut- off F req uency f T (MH Z ) Transient Thermal Resistance DC Cur rent Gain h FE DC Cur rent Gain h F E 300 –1 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –2.0 Base Current I B (A) h FE – I C Characteristics (Typical) –0.1 –5 –5A Collector-Emitter Voltage V C E (V) 10 –0.02 –10 mp) Temp ) –0 .1 A –2 (V C E =–4V) e Te A E –15 Cas – 0 .2 –10 C Weight : Approx 6.5g a. Part No. b. Lot No. – 3 ˚C ( A 3.35 I C – V BE Temperature Characteristics (Typical) 125 –0.4 0.65 +0.2 -0.1 1.5 V CE ( sat ) – I B Characteristics (Typical) Collector Current I C (A) 6A 4.4 B θ j - a (˚ C/W) –0. Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) A 5.45±0.1 1.5 RL (Ω) –1 0.8 2.15 1.05 +0.2 -0.1 VCC (V) –15 1.75 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 3.45 ±0.2 ø3.3±0.2 a b 16.2 IB 5.5±0.2 3.0 –6 IC 15.6±0.2 23.0±0.3 VEBO 0.8±0.2 –10max 5.5 VCB=–180V 1.6 –180 ICBO 3.3 VCEO Unit p) V Ratings ase Tem –180 External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Symbol –30˚C (C VCBO ■Electrical Characteristics (Case Unit 25˚C Ratings Symbol 9.5±0.2 ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 40 20 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SA1693 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4466) –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO IC=–50mA –80min V –6 A hFE 50min∗ VCE=–4V, IC=–2A A VCE(sat) IC=–2A, IB=–0.2A –1.5max V 60(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 150typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 20.0min –3 PC 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ –20mA –2 I B =–10mA 0 –1 0 –2 –3 –4 –1 –4A –2A 0 0 –0.5 –1.0 (V C E =–4V) 300 100 50 125˚C Transient Thermal Resistance DC Cur rent Gain h FE Typ 25˚C –30˚C 100 50 30 –0.02 –5 –6 –0.1 Collector Current I C (A) –0.5 –2 –1 –5 –6 5 1 0.5 0.3 1 10 Collector Current I C (A) f T – I E Characteristics (Typical) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 60 10 –10 Typ ite he at si nk Collector Curr ent I C (A) fin Without Heatsink Natural Cooling 40 In –1 –0.5 ith DC W 10 s 100ms –5 20 m M aximum Power Dissipa ti on P C ( W) –20 30 Cut -off Fre quen cy f T (M H Z ) DC Curr ent Gain h FE –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 300 –1 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –1.5 Base Current I B (A) h FE – I C Characteristics (Typical) –0.1 –2 I C =–6A Collector-Emitter Voltage V C E (V) 30 –0.02 –4 ) –30mA –2 e Te mp) e Te mp) –50mA Cas –4 ˚C ( –8 0m A 125 –1 00 m A (V C E =–4V) –6 –3 mA Collector Current I C (A) – 0 15 1.4 E I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚ C/W) 0 A C Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) –2 0m 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) –6 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.2±0.1 b IB Tstg a Temp IC 2.0±0.1 (Case VEBO 4.8±0.2 –30˚C –80 (Cas VCEO 15.6±0.4 9.6 25˚C V 1.8 VCB=–80V –80 5.0±0.2 ICBO VCBO 2.0 Unit Symbol External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit 4.0 ■Electrical Characteristics Conditions Ratings 19.9±0.3 Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 5 6 –0.1 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 27 2SA1694 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4467) –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO –8 A hFE –120min IC=–50mA V 50min∗ VCE=–4V, IC=–3A A VCE(sat) IC=–3A, IB=–0.3A –1.5max V 80(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 300typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 20.0min –3 PC RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –40 10 –4 –10 5 –0.4 0.4 0.14typ 1.40typ 0.21typ I B =–10mA 0 –1 0 –2 –3 –4 –4A 0 (V C E =–4V) 300 100 50 –1 –5 125˚C Transient Thermal Resistance DC Curr ent Gain h FE Typ –0.5 –0.5 25˚C 100 –30˚C 50 30 –0.02 –8 –0.1 –0.5 f T – I E Characteristics (Typical) –1.5 –1 –5 –8 3 1 0.5 0.3 1 10 100 1000 Time t(ms) Collector Current I C (A) Collector Current I C (A) –1.0 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 200 –0.1 0 Base-Emittor Voltage V B E (V) (V C E =–4V) 30 –0.02 0 –0.1 –0.2 –0.3 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0 Base Current I B (A) h FE – I C Characteristics (Typical) mp) –2A 0 Collector-Emitter Voltage V C E (V) D C Cur r ent Gai n h F E –2 I C =–8A e Te –1 (Cas –2 –4 –30˚C –25mA –6 mp) –50mA –4 –2 e Te –7 5m A Cas mA ˚C ( –100 –6 (V CE =–4V) 125 5 Collector Current I C (A) –1 1.4 E –8 θ j - a ( ˚ C/W) 0 Collector-Emitter Saturation Voltage V C E (s at) (V ) A m 50 Collector Current I C (A) –3 –2 5.45±0.1 C I C – V BE Temperature Characteristics (Typical) V CE ( s a t ) – I B Characteristics (Typical) A 0m 0.65 +0.2 -0.1 Weight : Approx 6.0g a. Part No. b. Lot No. –3 A 2 3 B VCC (V) 0m ø3.2±0.1 5.45±0.1 I C – V CE Characteristics (Typical) 2.0±0.1 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) –8 4.8±0.2 b IB Tstg a mp) IC e Te VEBO (Cas –120 15.6±0.4 9.6 25˚C VCEO 19.9±0.3 V 1.8 VCB=–120V –120 5.0±0.2 ICBO VCBO 2.0 Unit Symbol 4.0 Ratings Unit External Dimensions MT-100(TO3P) (Ta=25°C) Conditions Ratings 4.0max ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol Application : Audio and General Purpose Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 80 –20 –5 DC s he 40 at si nk Without Heatsink Natural Cooling ite –0.5 fin –1 60 In 10 100ms ith Co lle ctor Cu rren t I C (A) Typ 20 –10 m W Cut- off F req uency f T (MH Z ) 10 Maxim um Power Dissip ation P C (W) 30 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 28 5 8 –0.1 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SA1695 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4468) –10max µA V IEBO VEB=–6V –10max µA –140min IC=–50mA V 50min∗ VCE=–4V, IC=–3A A VCE(sat) IC=–5A, IB=–0.5A –0.5max V 100(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 400typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 20.0min –4 PC Tstg a ø3.2±0.1 b IB 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 5.45±0.1 5.45±0.1 B VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –60 12 –5 –10 5 –0.5 0.5 0.17typ 1.86typ 0.27typ I C – V BE Temperature Characteristics (Typical) –3 –10 A Collector Current I C (A) –8 –100 mA –7 5m A –6 –50mA –4 –25mA –2 I B =–10mA 0 –1 0 –2 –3 –4 –2 –1 –2 I C =–10A 0 0 –0.5 –1.0 –1.5 0 –1 (V C E =–4V) 200 Typ 50 –1 –5 Transient Thermal Resistance DC Curr ent Gain h F E 125˚C 100 25˚C 100 –30˚C 50 30 –0.02 –10 –0.1 Collector Current I C (A) –0.5 –1 –5 –10 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) –1.5 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 200 Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 100 –0.1 –3 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 nk Emitter Current I E (A) 10 si 1 50 at 0.1 he 0 0.02 ite ms Without Heatsink Natural Cooling fin 10 –0.5 In s –1 ith 3m s 10 DC –5 0m Typ 10 20 Co lle ctor Cu rren t I C ( A) –10 W Maximu m Power Diss ip ation P C (W) –30 30 Cut-o ff F requ ency f T (MH Z ) DC Curr ent Gain h F E 0 –2.0 (V C E =–4V) –0.5 –4 Base Current I B (A) h FE – I C Characteristics (Typical) –0.1 –6 –5A Collector-Emitter Voltage V C E (V) 30 –0.02 –8 p) 0m Tem –15 se 0 (Ca –2 ˚C 0 (V C E =–4V) 125 –3 θ j- a ( ˚C/W) 00 A 0m Collector-Emitter Saturation Voltage V C E (s at) (V ) –4 A 0m 1.4 E V CE ( sat ) – I B Characteristics (Typical) –10 mA C Weight : Approx 6.0g a. Part No. b. Lot No. Collector Current I C (A) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 ) hFE Temp V(BR)CEO A 2.0±0.1 (Case V –10 4.8±0.2 –30˚C –6 IC mp) VEBO e Te –140 (Cas VCEO 15.6±0.4 9.6 25˚C V 1.8 VCB=–140V –140 5.0±0.2 ICBO VCBO 2.0 Unit Symbol External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit 4.0 ■Electrical Characteristics Conditions Ratings 19.9±0.3 Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 29 2SA1725 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4511) V 50min∗ VCE=–4V, IC=–2A IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V PC 30(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 150typ pF °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Tstg –55 to +150 1.35±0.15 1.35±0.15 2.54 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ –30mA –20mA –2 I B =–10mA –1 0 –1 0 –2 –3 –1 I C =–6A –2A 0 –4 0 –0.5 –1.0 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 300 Typ 100 50 125˚C Transient Thermal Resistance DC C urrent G ain h FE D C Cur r ent Gai n h F E 300 –1 –0.5 0 25˚C –30˚C 100 50 30 –0.02 –5 –6 –0.1 Collector Current I C (A) –1.5 –0.5 –1 θ j-a – t Characteristics 5 1 0.5 0.4 1 –5 –6 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) –1 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –1.5 Base Current I B (A) h FE – I C Characteristics (Typical) –0.1 –2 –4A Collector-Emitter Voltage V C E (V) 30 –0.02 –4 p) –3 –2 Tem –50mA (Ca –4 ˚C A –8 0m A 125 –1 00 m –5 (V CE =–4V) –6 –3 Collector Current I C (A) mA I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) – 0 15 B C E V CE ( s a t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) –2 A Weight : Approx 2.0g a. Part No. b. Lot No. se I C – V CE Characteristics (Typical) m 00 2.4±0.2 2.2±0.2 VCC (V) –6 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 mp) Tj ø3.3±0.2 a b e Te hFE 4.0±0.2 A µA –80min 0.8±0.2 –6 –10max ±0.2 IC VEB=–6V IC=–25mA 4.2±0.2 2.8 c0.5 (Cas V(BR)CEO 3.9 IEBO V 10.1±0.2 ) V –6 µA –30˚C –80 VEBO –10max emp VCEO VCB=–80V se T ICBO (Ca V Unit 25˚C –80 Ratings 16.9±0.3 Unit VCBO External Dimensions FM20(TO220F) (Ta=25°C) Conditions 13.0min Symbol Ratings 8.4±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol Application : Audio and General Purpose Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 30 –10 10 100ms si nk –0.1 at Without Heatsink Natural Cooling he –0.5 ite –1 20 fin 10 s DC In 20 m ith Collecto r Cur ren t I C (A) –5 W Cut -off Fre quen cy f T ( MH Z ) Typ M aximum Po wer Dissipat io n P C (W) –20 30 10 Without Heatsink 2 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 30 5 6 –0.05 –3 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SA1726 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4512) VCB=–80V –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO IC=–25mA –80min V –6 A hFE 50min∗ VCE=–4V, IC=–2A IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V PC 50(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 150typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 2.5 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ I B =–10mA 0 –1 0 –2 –3 –4 I C =–6A –4A –2A 0 0 –0.5 Collector-Emitter Voltage V C E (V) –1.0 (V C E =–4V) 300 50 –1 –5 –6 125˚C Transient Thermal Resistance DC Cur rent Gain h FE 100 25˚C –30˚C 100 50 30 –0.02 –0.1 Collector Current I C (A) –0.5 mp) –1.5 –1 –5 –6 5 1 0.5 0.4 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 50 –10 10 100ms Typ 0.5 1 Emitter Current I E (A) 5 6 –0.05 –3 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 nk 0.05 0.1 si 0 0.02 at –0.1 he Without Heatsink Natural Cooling 30 ite –0.5 fin –1 40 In 10 s DC ith 20 m W Collector Curr ent I C (A) –5 Ma xim um Powe r Dissipation P C (W) –20 30 Cu t-of f Fr eque ncy f T (MH Z ) DC Curr ent Gain h FE Typ –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 300 –0.5 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –1.5 Base Current I B (A) h FE – I C Characteristics (Typical) 30 –0.02 –2 e Te –1 (Cas –20mA –2 –4 p) –30mA –2 Tem –50mA (Ca –4 ˚C A –8 0m A 125 –1 00 m Collector Current I C (A) –1 (V CE =–4V) –6 –3 A θ j- a ( ˚ C/ W) 0 I C – V BE Temperature Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) Collector Current I C (A) –2 m 50 1.4 Weight : Approx 2.6g a. Part No. b. Lot No. se I C – V CE Characteristics (Typical) A 2.5 B C E VCC (V) 0m 1.35 0.65 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) –6 b –30˚C Tstg ø3.75±0.2 a ) IC emp VEBO 2.0±0.1 se T –80 4.8±0.2 (Ca VCEO 10.2±0.2 25˚C V 3.0±0.2 ICBO –80 16.0±0.7 Unit VCBO External Dimensions MT-25(TO220) (Ta=25°C) 8.8±0.2 Symbol Ratings Unit 4.0max ■Electrical Characteristics Conditions Ratings Symbol 12.0min ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 20 10 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 31 2SA1746 LOW VCE (sat) Silicon PNP Epitaxial Planar Transistor V IEBO VEB=–6V –10max µA –6 V V(BR)CEO IC=–25mA –50min V –12(Pulse–20) A hFE 50min VCE=–1V, IC=–5A IB –4 A VCE(sat) IC=–5A, IB=–80mA –0.5max PC 60(Tc=25°C) W VBE(sat) IC=–5A, IB=–80mA –1.2max V Tj 150 °C fT VCE=–12V, IE=1A 25typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 400typ pF 3.3 3.0 V IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –20 4 –5 –10 5 –80 80 0.5typ 0.6typ 0.3typ I B =–10mA –2 0 –1 0 –2 –3 –4 –5 –3A 0 –3 –10 –100 0 (V C E =–1V) 500 125˚C 100 Transient Thermal Resistance Typ 25˚C –30˚C 100 –5 –1 50 –0.03 –10 ) mp) eTe –0.5 Collector Current I C (A) –0.1 –0.5 –1.5 –5 –1 –10 θ j-a – t Characteristics 4 1 0.5 0.2 1 10 100 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) –1.0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) D C Cur r ent Gai n h F E D C Cur r ent Gai n h F E 0 –1000 Base Current I B (mA) 500 Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 40 em –2 (V C E =–1V) –0.5 p) –5A –1A –6 h FE – I C Characteristics (Typical) –0.1 –4 I C =–10A Collector-Emitter Voltage V C E (V) 50 –0.03 –6 (Cas –0.5 –8 seT –1.0 –30˚C –4 –10 (Ca –30m A (V C E =–1V) ˚C –6 E 125 –50mA C Weight : Approx 6.5g a. Part No. b. Lot No. –12 –1.5 Collector Current I C (A) –8 3.35 1.5 I C – V BE Temperature Characteristics (Typical) θ j - a (˚ C/W) Collector Current I C (A) –70mA Collector-Emitter Saturation Voltage V C E (s a t) (V ) –10 4.4 B V CE ( sat ) – I B Characteristics (Typical) –100 mA 0.65 +0.2 -0.1 5.45±0.1 1.5 RL (Ω) –12mA 0.8 2.15 1.05 +0.2 -0.1 VCC (V) –12 1.75 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.3±0.2 a b emp Tstg 3.45 ±0.2 seT VEBO 5.5±0.2 (Ca –50 15.6±0.2 25˚C VCEO 0.8±0.2 µA 5.5 –10max V 1.6 VCB=–70V –70 9.5±0.2 ICBO VCBO 23.0±0.3 Unit Symbol External Dimensions FM100(TO3PF) (Ta=25°C) Ratings Unit IC ■Electrical Characteristics Conditions Ratings Symbol 16.2 ■Absolute maximum ratings (Ta=25°C) Application : Chopper Regulator, Switch and General Purpose 60 –30 10 s s at si 20 nk Collector Curre nt I C (A) he Without Heatsink Natural Cooling ite –1 fin 10 40 In 20 –5 ith Cu t-of f Fr eque ncy f T (MH Z ) m Typ W Maxim um Power Dissip ation P C (W) 0µ s 10 1m –10 30 Without Heatsink 0 0.1 1 Emitter Current I E (A) 32 10 –0.3 –3 –10 –50 Collector-Emitter Voltage V C E (V) –100 3.5 0 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150 2SA1859/1859A Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4883/A) V(BR)CEO IC=–10mA –150min –180min 60 to 240 V –1 A hFE VCE=–10V, IC=–0.7A PC 20(Tc=25°C) W VCE(sat) IC=–0.7A, IB=–70mA –1.0max V Tj 150 °C fT VCE=–12V, IE=0.7A 60typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 30typ pF Tstg RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –20 20 –1 –10 5 –100 100 0.5typ 1.0typ 0.5typ –4 –6 –8 0 –2 –10 Collector-Emitter Voltage V C E (V) –5 –10 –50 –100 (V C E =–4V) 300 DC Cur rent Gain h FE 125˚C Typ 100 –1 25˚C 100 –30˚C 50 –0.01 –2 mp) –0.5 f T – I E Characteristics (Typical) –1 θ j-a – t Characteristics –0.1 –0.5 –1 –2 7 5 1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) Collector Current I C (A) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 20 –5 nk Collector Cur rent I C (A) si Collector-Emitter Voltage V C E (V) 10 at 2 –50 –100 –200 he –10 ite 1 –5 fin –0.01 –1 Without Heatsink Natural Cooling 1.2SA1859 2.2SA1859A In –0.5 ith –0.1 W 2 s 1 s Emitter Current I E (A) 0.5 0m 0.1 C –0.5 20 0.05 ms 40 10 60 0 0.01 D –1 Typ 1m 10 80 M aximum Po wer Dissipat io n P C (W) 100 Cut -off Fre quen cy f T ( MH Z ) DC Curr ent Gain h F E 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 300 –0.5 0 –500 –1000 (V C E =–4V) –0.1 eTe –1A Base Current I B (mA) h FE – I C Characteristics (Typical) 50 –0.01 Cas I C =–2A –0.5A θ j - a (˚ C/W) –2 0 –1 –1 ˚C ( I B =–5mA –2 125 –1 (V C E =–4V) –2 –3 Transient Thermal Resistance –3 –10 mA 0 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (sa t) (V ) A 0m A A m 0m 00 –6 –1 Collector Current I C (A) –1 2.4±0.2 Weight : Approx 6.5g a. Part No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) 5mA 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 VCC (V) –2 1.35±0.15 2.54 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 4.0±0.2 3.9 IB ø3.3±0.2 a b p) A µA aseTem –2 V –10max –30˚C (C IC –180 VEB=–6V p) IEBO 0.8±0.2 –150 VCB= V eTem V –6 4.2±0.2 2.8 c0.5 (Cas –180 VEBO 10.1±0.2 µA –10max ICBO 25˚C –150 V External Dimensions FM20(TO220F) Unit 8.4±0.2 VCEO –180 Conditions 16.9±0.3 –150 Symbol 13.0min VCBO Unit (Ta=25°C) Ratings 2SA1859 2SA1859A ±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Ratings Symbol 2SA1859 2SA1859A Application : Audio Output Driver and TV Velocity-modulation 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 33 2SA1860 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886) VCB=–150V –100max µA V IEBO VEB=–5V –100max µA IC=–25mA –150min V VCE(sat) W fT 150 °C COB –55 to +150 °C Tstg IC=–5A, IB=–500mA –2.0max V VCE=–12V, IE=2A 50typ MHz VCB=–10V, f=1MHz 400typ pF 3.0 A 80(Tc=25°C) 3.3 –3 PC ø3.3±0.2 a b 1.75 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2 -0.1 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –60 12 –5 –10 5 –500 500 0.25typ 0.85typ 0.2typ I B =–20mA 0 –1 –2 –3 –4 0 0 –0.2 –0.4 –0.6 –0.8 (V C E =–4V) 200 200 –1 –5 Transient Thermal Resistance DC Cur rent Gain h FE Typ 50 25˚C 100 –30˚C 50 30 –0.02 –10 –14 –0.1 p) Tem –1 –0.5 f T – I E Characteristics (Typical) –2 –1 –5 θ j-a – t Characteristics –10 –14 3 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 80 –40 10 –10 si nk Collect or Cur ren t I C (A) 40 at Without Heatsink Natural Cooling he –0.5 ite –1 60 fin 20 s –5 In 40 C s s ith Typ m W D 60 10 0m 1m M aximum Power Dissipa ti on P C (W) 80 Cu t-off Fre quen cy f T (M H Z ) DC Cur rent Gain h FE 125˚C –0.5 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) (V C E =–4V) –0.1 0 –1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 20 –0.02 se –5A Collector-Emitter Voltage V C E (V) 100 –5 I C =–10A θ j- a ( ˚C/W) 0 –1 (Ca –50mA –5 –10 25˚ –100 mA –2 ˚C –1 50 m A –10 E (V C E =–4V) 125 mA C 3.35 Weight : Approx 6.5g a. Part No. b. Lot No. –14 Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s at) (V ) 00 –7 Collector Current I C (A) –200 1.5 I C – V BE Temperature Characteristics (Typical) –3 A m mA mA mA 00 500 400 00 – –3 –6 – 4.4 B V CE ( sat ) – I B Characteristics (Typical) mA –14 0.65 +0.2 -0.1 5.45±0.1 1.5 I C – V CE Characteristics (Typical) 0.8 2.15 ) IB Tj 50min∗ VCE=–4V, IC=–5A emp hFE eT V(BR)CEO A Cas V –14 3.45 ±0.2 ˚C ( –5 IC p) VEBO 5.5±0.2 –30 –150 Tem VCEO 15.6±0.2 ase V C (C –150 0.8±0.2 ICBO VCBO 5.5 Unit Symbol External Dimensions FM100(TO3PF) (Ta=25°C) Ratings Unit 1.6 ■Electrical Characteristics Conditions Ratings 23.0±0.3 Symbol 9.5±0.2 ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 16.2 LAPT 20 –0.1 0 0.02 0.1 1 Emitter Current I E (A) 34 10 –0.05 –2 Without Heatsink –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SA1907 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5099) –10max µA –6 V V(BR)CEO IC=–50mA –80min V –6 A hFE –3 A VCE(sat) IC=–12A, IB=–0.2A –0.5max V PC 60(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 150typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2 -0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ –20mA –2 I B =–10mA –1 0 –1 0 –2 –3 –4 –1 –2A 0 0 –0.5 –1.0 (V C E =–4V) 300 DC Cur rent Gain h FE Typ 100 50 125˚C 25˚C –30˚C 100 50 30 –0.02 –5 –6 –0.1 Collector Current I C (A) –1 –0.5 –1.5 –1 –5 –6 θ j-a – t Characteristics 5 1 0.5 0.3 1 10 Collector Current I C (A) f T – I E Characteristics (Typical) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 60 –10 DC 0m s ms s he at si nk Without Heatsink Natural Cooling ite –0.5 fin –1 40 In 10 –5 10 ith 20 1m 10 W Collecto r Cur rent I C ( A) Typ Ma xim um Powe r Dissipation P C (W) –20 30 Cu t-of f Fr eque ncy f T ( MH Z ) DC Curr ent Gain h F E 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 300 –1 0 –1.5 (V C E =–4V) –0.5 p) I C =–6A Base Current I B (A) h FE – I C Characteristics (Typical) –0.1 –2 –4A Collector-Emitter Voltage V C E (V) 30 –0.02 Tem –30mA –4 se –3 –2 (Ca –50mA (V CE =–4V) ˚C –4 E 125 A –8 0m A Collector Current I C (A) –1 00 m –5 C Weight : Approx 6.5g a. Part No. b. Lot No. –6 –3 A θ j- a ( ˚C/W) –1 m 50 3.35 1.5 I C – V BE Temperature Characteristics (Typical) Transient Thermal Resistance 0 A 4.4 B V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) –2 0m 0.65 +0.2 -0.1 5.45±0.1 1.5 VCC (V) –6 0.8 2.15 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 1.75 mp) Tstg e Te Tj ø3.3±0.2 a b 3.3 IB 3.45 ±0.2 3.0 50min∗ VCE=–4V, IC=–2A 0.8±0.2 VEB=–6V 5.5 IEBO 5.5±0.2 1.6 V 15.6±0.2 (Cas IC µA –30˚C VEBO –10max ) –80 VCB=–80V emp VCEO ICBO se T V Unit (Ca –80 Ratings 25˚C VCBO External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Symbol 23.0±0.3 Unit 9.5±0.2 ■Electrical Characteristics (Ta=25°C) Ratings Symbol 16.2 ■Absolute maximum ratings Application : Audio and General Purpose 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 5 6 –0.1 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 3.5 0 0 25 50 75 100 12 5 150 Ambient Temperature Ta(˚C) 35 2SA1908 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5100) –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO –8 A hFE –120min 50min∗ V –3 A IC=–3A, IB=–0.3A –0.5max V PC 75(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 300typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2 -0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –40 10 –4 –10 5 –0.4 0.4 0.14typ 1.40typ 0.21typ I B =–10mA 0 –1 0 –2 –3 –4 –4A 0 0 –0.2 –0.4 –0.6 –0.8 0 –1.0 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 300 100 50 –0.5 –1 125˚C 25˚C 100 –30˚C 50 30 –0.02 –5 –8 Transient Thermal Resistance DC Curr ent Gain h FE Typ –0.1 –0.5 –0.5 4 1 0.5 –1 –5 –8 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) –1.5 θ j-a – t Characteristics 0.2 –0.1 Collector Current I C (A) –1.0 Base-Emittor Voltage V B E (V) (V C E =–4V) 30 –0.02 0 Base Current I B (A) h FE – I C Characteristics (Typical) mp) –2A Collector-Emitter Voltage V C E (V) DC Curr ent Gain h FE –2 I C =–8A e Te –1 (Cas –2 –4 mp) –25mA –6 e Te –50mA –4 –2 Cas –7 5m A –6 ˚C ( mA E (V C E =–4V) 125 –100 C Weight : Approx 6.5g a. Part No. b. Lot No. –8 Collector Current I C (A) A θ j - a (˚C/W) –1 m 50 3.35 1.5 I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A m 50 Collector Current I C (A) –3 –2 A 4.4 B –3 m 00 0.65 +0.2 -0.1 5.45±0.1 1.5 VCC (V) –8 0.8 2.15 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 1.75 –30˚C Tstg mp) Tj ø3.3±0.2 a b 16.2 IB VCE(sat) 3.0 IC=–50mA VCE=–4V, IC=–3A 3.45 ±0.2 e Te IC 5.5±0.2 (Cas VEBO 25˚C –120 15.6±0.2 23.0±0.3 VCEO 0.8±0.2 VCB=–120V V 5.5 ICBO –120 1.6 Unit VCBO External Dimensions FM100(TO3PF) (Ta=25°C) Ratings Unit 3.3 Symbol Conditions Ratings 9.5±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol Application : Audio and General Purpose Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 80 –10 Typ –10 –50 –100 –150 Collector-Emitter Voltage V C E (V) Collector Curr ent I C (A) nk –0.1 –5 si 36 8 40 at Emitter Current I E (A) 5 Without Heatsink Natural Cooling he 1 –0.5 ite 0.5 –1 60 fin 0.05 0.1 s In 10 m s ith 20 0 0.02 DC –5 10 0m W Cut-o ff Fr eque ncy f T ( MH Z ) 10 Ma xim um Powe r Dissipat io n P C (W) –20 30 20 3.5 0 Without Heatsink 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150 2SA1909 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5101) ICBO VCB=–140V –10max µA V IEBO VEB=–6V –10max µA –140min IC=–50mA VCE=–4V, IC=–3A 50min∗ V –4 A VCE(sat) IC=–5A, IB=–0.5A –0.5max V PC 80(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 400typ pF –55 to +150 °C Tj Tstg 1.75 16.2 IB ø3.3±0.2 a b 3.0 hFE 3.3 V(BR)CEO A ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2 -0.1 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –60 12 –5 –10 5 –0.5 0.5 0.17typ 1.86typ 0.27typ mA –7 5m A –6 –50mA –4 –25mA –2 I B =–10mA 0 –1 0 –2 –3 –4 –2 –1 0 0 –0.5 –1.0 –1.5 0 –2.0 0 –1 (V C E =–4V) 200 50 –1 –5 125˚C 100 25˚C –30˚C 50 20 –0.02 –10 Transient Thermal Resistance D C Cur r ent Gai n h F E Typ 100 –0.1 θ j-a – t Characteristics –0.5 –1 –5 –10 3 1 0.5 0.1 1 10 f T – I E Characteristics (Typical) 100 1000 2000 Time t(ms) Collector Current I C (A) Collector Current I C (A) –1.5 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 200 Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 80 he 40 at si nk Collector Curr ent I C (A) ite Without Heatsink Natural Cooling fin –0.5 In –1 60 ith s C W D 0m 10 –5 ms Typ 10 20 10 –10 M aximum Po wer Dissipation P C (W) –30 30 Cu t-of f Fr eque ncy f T (MH Z ) DC Curr ent Gain h FE –2 I C =–10A (V C E =–4V) –0.5 –4 Base Current I B (A) h FE – I C Characteristics (Typical) –0.1 –6 –5A Collector-Emitter Voltage V C E (V) 30 –0.02 –8 p) Collector Current I C (A) –100 Tem A (V C E =–4V) se 0m E (Ca –15 –8 Weight : Approx 6.0g a. Part No. b. Lot No. –10 ˚C A C 125 –2 m 00 Collector Current I C (A) A θ j - a (˚C /W) –3 m 00 Collector-Emitter Saturation Voltage V C E (s at) (V) –4 A 3.35 1.5 I C – V BE Temperature Characteristics (Typical) –3 m 00 4.4 B V CE ( sat ) – I B Characteristics (Typical) –10 0.65 +0.2 -0.1 5.45±0.1 1.5 I C – V CE Characteristics (Typical) 0.8 2.15 ) V –10 Temp –6 IC (Case VEBO 3.45 ±0.2 –30˚C –140 5.5±0.2 mp) VCEO 15.6±0.2 e Te V (Cas –140 25˚C VCBO 0.8±0.2 Unit 5.5 Ratings Symbol External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Unit 1.6 ■Electrical Characteristics (Ta=25°C) Ratings 9.5±0.2 Symbol 23.0±0.3 ■Absolute maximum ratings Application : Audio and General Purpose 20 Without Heatsink 0 0.02 0.1 1 Emitter Current I E (A) 10 –0.1 –3 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 37 2SA2042 Silicon PNP Epitaxial Planar Transistor V ICBO VCEO −50 V IEBO VEBO −6 V V(BR)CEO IC −10（pulse−20） A hFE IB −3 A −10max VEB＝−6V −10max µA −50min V VCE＝−2V, IC＝−1A 130∼310 VCE(sat) IC＝−5A, IB＝−0.1A −0.5max VCE＝−12V, IE＝0.5A 60typ VCB＝−10V, f＝1MHz 375typ 30(Tc＝25°C) W fT Tj 150 °C COB −55 to ＋150 °C V pF 4.2±0.2 2.8 c0.5 ø3.3±0.2 a b MHz 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) 2.4±0.2 2.2±0.2 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –20 4 –5 –10 5 –100 100 0.2typ 0.7typ 0.1typ 38 10.1±0.2 µA IC＝−25mA PC Tstg VCB＝−50V 4.0±0.2 −50 External Dimensions FM20(TO220F) Unit 0.8±0.2 VCBO (Ta=25°C) Ratings Conditions ±0.2 Symbol 3.9 ■Electrical Characteristics Unit 8.4±0.2 (Ta=25°C) Ratings 16.9±0.3 Symbol 13.0min ■Absolute maximum ratings Application : Audio and General Purpose B C E Weight : Approx 6.5g a. Part No. b. Lot No. (2 kΩ)(6 5 0 Ω) E 2SB1257 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) A –10max µA –60min V hFE VCE=–4V, IC=–3A 2000min IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max PC 25(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max V Tj 150 °C fT VCE=–12V, IE=0.2A 150typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 75typ pF Tstg 3.3 3.0 V IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –30 10 –3 –10 5 –10 10 0.4typ 0.8typ 0.6typ –1 0 –1 0 –2 –3 –4 –5 –3A –1 –2A –0.5 –1 –5 –10 h FE – I C Temperature Characteristics (Typical) 8000 DC Cur r ent Gai n h F E 500 100 1000 12 5˚C 25 500 ˚C –3 0˚C 100 50 50 –0.5 –1 20 –0.02 –5 –6 –0.05 –0.1 Collector Current I C (A) –0.5 240 –1 –5 –6 1 0.7 10 1m s 2 at si nk 4 0x he 1 Emitter Current I E (A) 1 00x 1 0 10 ite –0.1 –0.07 –3 150x150x2 fin Without Heatsink Natural Cooling 40 In –0.5 20 ith –1 Natural Cooling Silicone Grease Heatsink: Aluminum in mm W 80 m 120 s 10 160 DC 1000 P c – T a Derating 25 –5 Typ 100 Time t(ms) –10 0.5 1 Safe Operating Area (Single Pulse) 200 –2 –2.2 5 (V C E =–12V) 0.1 –1 Collector Current I C (A) f T – I E Characteristics (Typical) 0 0.05 0 θ j-a – t Characteristics Transient Thermal Resistance 5000 Co lle ctor Cu rre nt I C ( A) DC Cur r ent Gai n h F E (V C E =–2V) Typ 1000 Cut- off F req uency f T (M H Z ) 0 –50 Base-Emittor Voltage V B E (V) (V C E =–2V) –0.1 mp) –1 Base Current I B (mA) h FE – I C Characteristics (Typical) 20 –0.02 –2 I C =–1A Collector-Emitter Voltage V C E (V) 8000 5000 –3 e Te –2 –0.6 –0.2 –6 (V C E =–2V) (Cas –2 E 125˚C –0.8mA –3 Collector Current I C (A) =– –1.0mA C 3.35 Weight : Approx 2.0g a. Part No. b. Lot No. –4 –3 Maxim um Power Dissipation P C (W) Collector Current I C (A) –1.2 mA –4 0.65 +0.2 -0.1 1.5 I C – V BE Temperature Characteristics (Typical) θ j - a (˚ C/W) A Collector-Emitter Saturation Voltage V C E (s at) (V ) –1 .5 m A IB –5 4.4 B V CE ( sat ) – I B Characteristics (Typical) mA 2. 3m – 1 .8 +0.2 -0.1 5.45±0.1 1.5 RL (Ω) 0.8 2.15 1.05 VCC (V) –6 1.75 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.3±0.2 a b ) –4(Pulse–6) IC VEB=–6V IC=–10mA 3.45 ±0.2 ) V(BR)CEO 5.5±0.2 Temp IEBO V 15.6±0.2 Temp V –6 µA (Case –60 VEBO –10max –30˚C VCEO VCB=–60V 0.8±0.2 ICBO Unit 5.5 V Ratings 1.6 –60 External Dimensions FM20(TO220F) (Ta=25°C) Conditions (Case VCBO Symbol 25˚C Unit 9.5±0.2 Ratings 23.0±0.3 Symbol C Application : Driver for Solenoid, Relay and Motor and General Purpose ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) B Equivalent circuit 16.2 Darlington 50x50x2 Without Heatsink 2 –5 –10 Collector-Emitter Voltage V C E (V) –70 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 39 (3 kΩ)(1 0 0 Ω) E 2SB1258 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785) A µA –100min hFE VCE=–2V, IC=–3A 1000min V IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max Tj 150 °C fT VCE=–12V, IE=0.2A 100typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 100typ pF Tstg V 3.9 V 5 –2.0 mA –1 .8 m A IB –5 Collector Current I C (A) –1.2 mA –4 –0.9mA –3 –2 –1 0 –1 0 –2 –3 –4 –5 I C – V BE Temperature Characteristics (Typical) –5 –2 8000 –4A –1 –10 0 –100 –200 (V C E =–4V) 8000 Typ –1 500 –1 12 1000 5˚C ˚C 25 500 –3 0˚C 100 30 –0.03 –6 –0.1 Collector Current I C (A) –0.5 5 –1 –6 1 0.5 1 10 Safe Operating Area (Single Pulse) 30 –20 s s 150x150x2 ite he 100x100x2 at si 10 nk –0.1 fin 20 In Without Heatsink Natural Cooling 20 ith –1 –0.5 Natural Cooling Silicone Grease Heatsink: Aluminum in mm W Collector Cur rent I C (A) 0µ s 0µ s 40 m 60 DC 50 10 –5 80 1m 100 10 –10 Ma xim um Powe r Dissipation P C (W) Typ 1000 P c – T a Derating (V C E =–12V) 120 100 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) –2 –2.2 θ j-a – t Characteristics Transient Thermal Resistance DC Curr ent Gain h FE 5000 1000 Cu t-off Fr eque ncy f T ( MH Z ) 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 5000 –0.5 –2 I C =–2A –1 (V C E =–4V) –0.1 –3 Base Current I B (mA) h FE – I C Characteristics (Typical) 80 –0.03 –4 –6A –0.6 –0.5 –1 –6 (V C E =–4V) –6 –3 Collector-Emitter Voltage V C E (V) DC Curr ent Gain h FE 0.5typ mp) mA =– 3. – 4 2. 1.6typ B C E V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 4m A –6 0.6typ 6 –6 I C – V CE Characteristics (Typical) 2.4±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) e Te –10 tstg (µs) (Cas –3 ton (µs) IB2 (mA) IB1 (mA) 125˚C 10 –30 VBB2 (V) VBB1 (V) Collector Current I C (A) IC (A) 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 θ j- a ( ˚ C/ W) RL (Ω) 1.35±0.15 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) ø3.3±0.2 a b ) –6(Pulse–10) IC –10max VEB=–6V IC=–10mA Temp V(BR)CEO 4.2±0.2 2.8 c0.5 ) IEBO V 10.1±0.2 (Case V –6 µA –30˚C –100 VEBO –10max 4.0±0.2 VCEO VCB=–100V 0.8±0.2 ICBO Unit ±0.2 V Ratings Temp –100 External Dimensions FM20(TO220F) (Ta=25°C) Conditions (Case VCBO Symbol 25˚C Unit 8.4±0.2 ■Electrical Characteristics Ratings Symbol 50x50x2 Without Heatsink 2 0 0.05 0.1 0.5 1 Emitter Current I E (A) 40 5 6 C Application : Driver for Solenoid, Relay and Motor and General Purpose 16.9±0.3 ■Absolute maximum ratings (Ta=25°C) B Equivalent circuit 13.0min Darlington –0.05 –3 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 (3 kΩ)(1 0 0 Ω) E 2SB1259 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081) A hFE mA –120min VCE=–4V, IC=–5A 2000min V IB –1 A VCE(sat) IC=–5A, IB=–10mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–5A, IB=–10mA –2.0max V Tj 150 °C fT VCE=–12V, IE=0.2A 100typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 145typ pF Tstg 3.9 V 1.35±0.15 1.35±0.15 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –30 10 –3 –10 5 –6 6 0.6typ 1.6typ 0.5typ I B =–1mA –5 0 –1 0 –2 –3 –4 –5 –2 I C =–10A –5A –1 –2 0 –0.2 –6 –1 –10 –100 D C Cur r ent Gai n h F E 5000 1000 500 100 5000 12 1000 5˚C ˚C 25 500 –3 0˚C 100 50 –1 –5 20 –0.02 –10 –0.1 Collector Current I C (A) –0.5 –1 –5 –10 1 0.5 0.3 Safe Operating Area (Single Pulse) at si 10 nk 10 he 5 ite 1 150x150x2 100x100x2 50x50x2 Without Heatsink –0.05 0.5 fin –0.1 In Without Heatsink Natural Cooling ith –0.5 20 W M aximu m Power Dissipat io n P C (W) s Co lle ctor Cu rren t I C (A) 0µ s –1 –0.03 –3 1000 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 10 m DC s 10 –5 100 1m Typ 100 30 –10 Emitter Current I E (A) 10 P c – T a Derating –20 0.1 1 Time t(ms) (V C E =–12V) 200 –2 –2.2 5 Collector Current I C (A) f T – I E Characteristics (Typical) Cut- off F req uency f T (MH Z ) D C Cur r ent Gai n h F E (V C E =–4V) 20000 10000 Typ 0 0.05 –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 20000 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –1000 Base Current I B (mA) h FE – I C Characteristics (Typical) 50 –0.03 –4 –1A Collector-Emitter Voltage V C E (V) 10000 –6 ) –2mA –8 Temp A (V C E =–4V) (Case –10 –10 125˚C A –3m –3 Collector Current I C (A) A –5m I C – V BE Temperature Characteristics (Typical) θ j - a (˚C /W) – m 10 B C E Transient Thermal Resistance A Weight : Approx 2.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 0m Collector Current I C (A) –5 –2 0m 2.4±0.2 2.2±0.2 VCC (V) –15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.3±0.2 a b ) –10(Pulse–15) IC –10max VEB=–6V IC=–10mA Temp V(BR)CEO 4.2±0.2 2.8 c0.5 (Case IEBO V 10.1±0.2 –30˚C V –6 µA 4.0±0.2 –120 VEBO –10max 0.8±0.2 VCEO VCB=–120V ±0.2 ICBO Unit mp) V Ratings e Te –120 External Dimensions FM20(TO220F) (Ta=25°C) Conditions (Cas VCBO Symbol 25˚C Unit 8.4±0.2 ■Electrical Characteristics (Ta=25°C) Ratings Symbol C Application : Driver for Solenoid, Relay and Motor and General Purpose 16.9±0.3 ■Absolute maximum ratings B Equivalent circuit 13.0min Darlington 2 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 41 (2 kΩ)(1 0 0 Ω) E 2SB1351 Silicon PNP Epitaxial Planar Transistor hFE mA –60min V VCE=–4V, IC=–10A 2000min IB –1 A VCE(sat) IC=–10A, IB=–20mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–10A, IB=–20mA –2.0max V Tj 150 °C fT VCE=–12V, IE=1A 130typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 170typ pF Tstg 3.9 V 1.35±0.15 1.35±0.15 I B =–1mA –5 –1 –2 –3 –4 –5 I C =–10A –5A –1 –5 0 –0.1 –6 –1 –10 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 20000 10000 DC Cur rent Gain h FE Typ 5000 –10 –20 12 C 25 ˚C –30 ˚C 1000 500 –0.3 –0.5 –1 –5 –10 –20 1 0.3 1 Safe Operating Area (Single Pulse) 10 s he 100x100x2 at si 10 nk –0.1 150x150x2 ite 40 fin Without Heatsink Natural Cooling In –0.5 20 ith –1 Natural Cooling Silicone Grease Heatsink: Aluminum in mm W Collecto r Cur ren t I C (A) 1m DC –5 s 80 1000 P c – T a Derating m 120 10 –10 Typ 100 30 –30 160 –2.4 Time t(ms) (V C E =–12V) 200 –2 0.5 Collector Current I C (A) f T – I E Characteristics (Typical) Cut-o ff F requ ency f T (MH Z ) 5˚ 5000 Collector Current I C (A) 240 –1 θ j-a – t Characteristics 5 Ma ximum Po we r Dissipatio n P C (W) DC Cur rent Gain h FE 20000 –5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –1 0 –100 Base Current I B (mA) h FE – I C Characteristics (Typical) 1000 800 –0.3 –10 –1A Collector-Emitter Voltage V C E (V) 10000 –15 ) –10 –2 emp –2m A (V C E =–4V) –20 –3 eT Collector Current I C (A) –3 mA 0 I C – V BE Temperature Characteristics (Typical) ˚C ( –4 m A –15 0 0.6typ Collector Current I C (A) A –1 0m A –6m 1.5typ B C E V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –20 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) 125 I C – V CE Characteristics (Typical) 0.7typ 20 –20 tstg (µs) Cas 5 –10 –10 ton (µs) IB2 (mA) IB1 (mA) θ j- a ( ˚C/W) 4 –40 VBB2 (V) VBB1 (V) IC (A) 2.4±0.2 2.2±0.2 Transient Thermal Resistance RL (Ω) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) ø3.3±0.2 a b mp) A –10max e Te –12(Pulse–20) VEB=–6V IC=–10mA (Cas V(BR)CEO 4.2±0.2 2.8 c0.5 –30˚C IEBO V 10.1±0.2 4.0±0.2 V –6 µA 0.8±0.2 –60 VEBO –10max ) VCEO VCB=–60V emp ICBO se T V Unit (Ca –60 Ratings 25˚C VCBO External Dimensions FM20(TO220F) (Ta=25°C) Condition ±0.2 Symbol Unit IC C 8.4±0.2 ■Electrical Characteristics Ratings Symbol Equivalent circuit Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose 16.9±0.3 ■Absolute maximum ratings (Ta=25°C) B 13.0min Darlington 50x50x2 Without Heatsink 2 0 0.05 0.1 0.5 1 Emitter Current I E (A) 42 5 10 20 –0.05 –2 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 (2 kΩ)(1 0 0 Ω) E 2SB1352 Silicon PNP Epitaxial Planar Transistor hFE mA –60min V VCE=–4V, IC=–10A 2000min IB –1 A VCE(sat) IC=–10A, IB=–20mA –1.5max PC 60(Tc=25°C) W VBE(sat) IC=–10A, IB=–20mA –2.0max V Tj 150 °C fT VCE=–12V, IE=1A 130typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 170typ pF Tstg 3.3 3.0 V IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –40 4 –10 –10 5 –20 20 0.7typ 1.5typ 0.6typ –5 –1 –2 –3 –4 –5 –20 I C =–10A –5A –1 0 –0.1 –1 –10 DC Cur rent Gain h FE 10000 Typ 5000 –10 –20 12 C 25 ˚C –30 ˚C 1000 500 –0.3 –0.5 –1 Collector Current I C (A) –5 –10 –20 1 0.3 s –5 20 ) 20 nk 10 si 5 at 1 he –0.1 ite 40 fin Without Heatsink Natural Cooling In –0.5 40 ith –1 –0.05 –2 1000 W Ma ximum Po we r Dissipatio n P C (W) s m 80 100 P c – T a Derating 1m DC 10 120 0.5 10 60 –10 Emitter Current I E (A) 1 Time t(ms) –30 Typ –2.4 0.5 Safe Operating Area (Single Pulse) 160 –2 θ j-a – t Characteristics 5 (V C E =–12V) 200 0 0.05 0.1 –1 Collector Current I C (A) f T – I E Characteristics (Typical) Cut-o ff F requ ency f T (MH Z ) 5˚ 5000 Collecto r Cur ren t I C (A) DC Cur rent Gain h FE (V C E =–4V) 20000 240 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 20000 –5 0 –100 Base Current I B (mA) (V C E =–4V) –1 –10 –5 –6 h FE – I C Characteristics (Typical) 1000 800 –0.3 –15 –1A Collector-Emitter Voltage V C E (V) 10000 (V C E =–4V) emp –2 θ j- a ( ˚C/W) 0 –3 Transient Thermal Resistance 0 I C – V BE Temperature Characteristics (Typical) eT –1mA E Cas –10 C 3.35 Weight : Approx 6.5g a. Part No. b. Lot No. ˚C ( –2m A 0.65 +0.2 -0.1 1.5 125 =– IB Collector Current I C (A) –3 mA –15 B Collector Current I C (A) –4 m A 4.4 V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 10 m A –6m +0.2 -0.1 5.45±0.1 1.5 RL (Ω) 0.8 2.15 1.05 VCC (V) –20 1.75 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.3±0.2 a b mp) A –10max ) –12(Pulse–20) VEB=–6V IC=–10mA 3.45 ±0.2 emp V(BR)CEO 5.5±0.2 e Te IEBO V 15.6±0.2 (Cas V –6 µA –30˚C –60 VEBO –10max 0.8±0.2 VCEO VCB=–60V 5.5 ICBO 1.6 V Unit se T –60 IC C External Dimensions FM100(TO3PF) (Ta=25°C) Ratings Conditions (Ca VCBO Symbol 25˚C Unit 9.5±0.2 ■Electrical Characteristics (Ta=25°C) Ratings Symbol Equivalent circuit Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose 23.0±0.3 ■Absolute maximum ratings B 16.2 Darlington Without Heatsink –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 3.5 0 0 50 100 150 Ambient Temperature Ta(˚C) 43 (2 kΩ) (80Ω) E 2SB1382 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2082) hFE VCE=–4V, IC=–8A 2000min V IB –1 A VCE(sat) IC=–8A, IB=–16mA –1.5max PC 75(Tc=25°C) W VBE(sat) IC=–8A, IB=–16mA –2.5max V Tj 150 °C fT VCE=–12V, IE=1A 50typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 350typ pF Tstg 3.3 3.0 V RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –40 5 –8 –10 5 –16 16 0.8typ 1.8typ 1.0typ 1.05 +0.2 -0.1 0 I B =–1.5m A –1 0 –2 –3 –4 –5 –8A –4A –1 0 –0.5 –6 –1 –10 (V C E =–4V) Typ 5000 1000 –10 –16 10000 12 5˚C 5000 25 ˚C – ˚C 30 1000 500 –0.3 –0.5 –1 f T – I E Characteristics (Typical) –5 –10 –16 10 p) P c – T a Derating m 10 s 0µ s s DC 40 si nk 16 at 10 he 5 ite Without Heatsink Natural Cooling fin –1 –0.5 60 In Co lle ctor Cu rren t I C (A) 1m –5 –0.05 –0.03 –3 1000 ith 1 100 W 0.5 10 Time t(ms) –0.1 Emitter Current I E (A) 1 80 –10 44 0.2 –50 Typ 0 0.05 0.1 0.5 Safe Operating Area (Single Pulse) 50 –2.4 1 (V C E =–12V) 100 –2 3 Collector Current I C (A) Collector Current I C (A) Cut- off F req uency f T (MH Z ) Transient Thermal Resistance D C Cur r ent Gai n h F E D C Cur r ent Gai n h F E 20000 10000 –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 20000 –5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –1 0 –100 Base Current I B (mA) h FE – I C Characteristics (Typical) –0.5 –8 –4 Collector-Emitter Voltage V C E (V) 500 –0.3 Tem I C =–16A –12 se –2 (V C E =–4V) (Ca –10 –16 ˚C –3m A E 125 –6 mA C Weight : Approx 6.5g a. Part No. b. Lot No. –3 M aximu m Power Dissipat io n P C (W) Collector Current I C (A) –20 3.35 1.5 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) A –12m 4.4 B θ j - a ( ˚ C/ W) A 0.65 +0.2 -0.1 5.45±0.1 V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 0m –4 – m 20 0.8 2.15 1.5 VCC (V) –26 1.75 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.3±0.2 a b ) A mA –120min emp –16(Pulse–26) IC –10max VEB=–6V IC=–10mA 3.45 ±0.2 mp) V(BR)CEO 5.5±0.2 e Te IEBO V 15.6±0.2 (Cas V –6 µA –30˚C –120 VEBO –10max 0.8±0.2 VCEO VCB=–120V 5.5 ICBO Unit 1.6 V Ratings se T –120 C External Dimensions FM100(TO3PF) (Ta=25°C) Conditions (Ca VCBO Symbol 25˚C Unit 9.5±0.2 ■Electrical Characteristics Ratings Symbol Equivalent circuit Application : Chopper Regulator, DC Motor Driver and General Purpose 23.0±0.3 ■Absolute maximum ratings (Ta=25°C) B 16.2 Darlington 20 Without Heatsink –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 0 50 100 Ambient Temperature Ta(˚C) 150 (2 kΩ) (80Ω) E 2SB1383 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2083) –10max µA V IEBO VEB=–6V –10max mA –120min 2000min VCE(sat) IC=–12A, IB=–24mA –1.8max VBE(sat) IC=–12A, IB=–24mA –2.5max V VCE=–12V, IE=1A 50typ MHz VCB=–10V, f=1MHz 230typ pF W Tj 150 °C fT –55 to +150 °C COB Tstg V 1.05 +0.2 -0.1 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –24 2 –12 –10 5 –24 24 1.0typ 3.0typ 1.0typ –1.0mA –5 I B =–0.6mA 0 –1 –2 –3 –4 –5 –12A –1 –6A 0 –0.5 –1 –6 –10 –100 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) Typ 5000 1000 500 –10 –40 12 5000 5˚C 25 Transient Thermal Resistance 10000 10000 DC Cur rent Gain h FE 20000 ˚C –30 ˚C 1000 500 200 –0.2 –0.5 Collector Current I C (A) –1 –5 –10 –40 ) 0.1 1 10 1000 P c – T a Derating 120 M aximum Power Dissipa ti on P C (W) Co lle ctor Cu rre nt I C (A) nk Collector-Emitter Voltage V C E (V) –200 si –100 at –50 he –10 ite –5 fin –0.2 –3 In Without Heatsink Natural Cooling ith –1 100 W s –5 –0.5 10 s 10 1m 20 DC –10 m 30 10 40 5 100 –50 Typ Emitter Current I E (A) mp 0.5 Time t(ms) 50 1 Te 1 –100 0.5 –2.6 2 Safe Operating Area (Single Pulse) 60 –2 θ j-a – t Characteristics (V C E =–12V) 0 0.1 –1 Collector Current I C (A) f T – I E Characteristics (Typical) Cut- off F req uency f T (MH Z ) DC Cur rent Gain h FE 20000 –5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –1 0 –500 Base Current I B (mA) h FE – I C Characteristics (Typical) –0.5 –10 –5 Collector-Emitter Voltage V C E (V) 200 –0.2 –15 –30 –1.5mA –2 –20 se –2.5m A I C =–25A (V C E =–4V) (Ca –4 .0m A 0 –25 5˚C Collector Current I C (A) –20 –10 –3 12 –6 .0 m A –15 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) .0 1.4 E Weight : Approx 6.0g a. Part No. b. Lot No. θ j- a ( ˚ C/W) –8 mA C V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –25 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) I C – V CE Characteristics (Typical) 2 3 ) 120(Tc=25°C) ø3.2±0.1 b emp A PC a p) –2 em IB V eT hFE 2.0±0.1 Cas V(BR)CEO A 4.8±0.2 ˚C ( V –25(Pulse–40) 19.9±0.3 IC=–25mA VCE=–4V, IC=–12A –6 IC VEBO 15.6±0.4 9.6 2.0 VCB=–120V 1.8 –120 ICBO 5.0±0.2 VCEO Unit eT V Ratings Cas –120 C External Dimensions MT-100(TO3P) (Ta=25°C) Conditions Symbol C( VCBO ■Electrical Characteristics 25˚ Unit 4.0 Ratings Symbol Equivalent circuit 4.0max ■Absolute maximum ratings (Ta=25°C) B Application : Chopper Regulator, DC Motor Driver and General Purpose 20.0min Darlington 50 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 45 (2 kΩ) (80Ω) E 2SB1420 Silicon PNP Epitaxial Planar Transistor VCBO –120 V ICBO VCB=–120V –10max µA VCEO –120 V IEBO VEB=–6V –10max mA –6 V V(BR)CEO –16(Pulse–26) A hFE Unit IC=–10mA –120min VCE=–4V, IC=–8A 2000min V IB –1 A VCE(sat) IC=–8A, IB=–16mA –1.5max PC 80(Tc=25°C) W VBE(sat) IC=–8A, IB=–16mA –2.5max V Tj 150 °C fT VCE=–12V, IE=1A 50typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 350typ pF V IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –24 2 –12 –10 5 –24 24 1.0typ 3.0typ 1.0typ 0 –1 –2 –3 –4 –5 –4A –1 0 –0.5 –6 –1 –10 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 10000 Typ 5000 1000 –10 –16 10000 12 5˚C 5000 25 ˚C 0 –3 ˚C 1000 500 –0.3 –0.5 f T – I E Characteristics (Typical) –1 –5 –10 –16 0.2 10 m 10 s 0µ s s DC 40 ) emp mp) se T at si nk Without Heatsink Natural Cooling he –1 –0.5 60 ite Collecto r Cur ren t I C (A) 1m –5 –0.05 –0.03 –3 e Te P c – T a Derating fin 16 1000 In 10 100 ith 5 1.8 10 W Emitter Current I E (A ) 1 80 –10 1 p) 0.5 Time t(ms) –0.1 46 1 –50 0.5 –2.4 3 Safe Operating Area (Single Pulse) 50 –2 θ j-a – t Characteristics (V C E =–12V) Typ 0 0.05 0.1 –1 Collector Current I C (A) Collector Current I C (A) Cut-o ff F requ ency f T (MH Z ) Transient Thermal Resistance 20000 DC Cur rent Gain h F E DC Cur rent Gain h F E 20000 100 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –5 0 –100 Base Current I B (mA) h FE – I C Characteristics (Typical) –1 Tem –4 Collector-Emitter Voltage V C E (V) 500 –0.3 –8 (Ca –8A se I C =–16A –12 (Cas I B =–1.5m A –2 (V CE =–4V) (Ca –3m A 0 –16 ˚C –6 mA –10 –3 M aximum Po we r Dissipatio n P C (W) Collector Current I C (A) –20 1.4 E 125 A –12m 5.45±0.1 C I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) A 0.65 +0.2 -0.1 Weight : Approx 6.0g a. Part No. b. Lot No. θ j - a (˚C /W ) m 5.0±0.2 1.05 +0.2 -0.1 V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) A 0m –4 0 –2 2 3 B RL (Ω) –26 ø3.2±0.1 5.45±0.1 VCC (V) 2.0±0.1 b ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) a 4.8±0.2 –30˚C Tstg 15.6±0.4 9.6 2.0 Conditions 25˚C IC Symbol 19.9±0.3 VEBO C External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit 4.0 ■Electrical Characteristics (Ta=25°C) Ratings Symbol 4.0max ■Absolute maximum ratings B Equivalent circuit Application : Chopper Regulator, DC Motor Driver and General Purpose 20.0min Darlington 20 Without Heatsink –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 (7 0 Ω ) E 2SB1559 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2389) µA V IEBO VEB=–5V –100max µA –5 V V(BR)CEO IC=–30mA –150min V –8 A hFE VCE=–4V, IC=–6A 5000min∗ VCEO –150 VEBO IC –1 A VCE(sat) IC=–6A, IB=–6mA –2.5max PC 80(Tc=25°C) W VBE(sat) IC=–6A, IB=–6mA –3.0max V Tj 150 °C fT VCE=–12V, IE=1A 65typ MHz –55 to +150 °C VCB=–10V, f=1MHz 160typ pF COB a 4.8±0.2 2.0±0.1 ø3.2±0.1 b IB Tstg 15.6±0.4 9.6 1.8 –100max V 5.0±0.2 VCB=–160V –160 2.0 ICBO VCBO 19.9±0.3 Unit Symbol C External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit 4.0 ■Electrical Characteristics Conditions Ratings Symbol V 2 4.0max ■Absolute maximum ratings (Ta=25°C) Equivalent circuit Application : Audio, Series Regulator and General Purpose 20.0min Darlington B 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –60 10 –6 –10 5 –6 6 0.7typ 3.6typ 0.9typ I C – V CE Characteristics (Typical) 5.45±0.1 B C 1.4 E Weight : Approx 6.0g a. Part No. b. Lot No. I C – V BE Temperature Characteristics (Typical) 0 –2 0 –4 0 –0.2 –6 –0.5 –1 Collector-Emitter Voltage V C E (V) –5 –10 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 40,000 50000 10,000 5,000 –1 –5 –8 Transient Thermal Resistance Typ DC Cur rent Gain h FE 25˚C 10000 –30˚C 5000 1000 –0.2 –1 –5 –8 1 5 10 C m s s ite he 40 at si nk –0.1 fin Without Heatsink Natural Cooling 20 In –1 –0.5 60 ith Collector Curre nt I C (A) D 10 0m W –5 40 500 1000 2000 80 –10 60 mp) 50 100 P c – T a Derating –20 Typ ) 10 Time t(ms) Safe Operating Area (Single Pulse) 80 e Te 0.5 (V C E =–12V) 100 –3 1 Collector Current I C (A) f T – I E Characteristics (Typical) –2 4 0.2 –0.5 Collector Current I C (A) Cas –1 θ j-a – t Characteristics M aximum Po wer Dissipation P C (W) DC C urrent G ain h FE 125˚C Cut -off Fre quen cy f T ( MH Z ) 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –50 –100 –200 Base Current I B (mA) h FE – I C Characteristics (Typical) 2,000 –0.2 p) –2 emp –1 –4 ˚C ( I C =–4A –30 –6A –6 Tem I B =–0.3mA –2 –8A se T –0.5m A –4 –2 se –0.8m A (Ca –1 .0 mA –6 (V C E =–4V) –8 –3 (Ca A – 1 .5 m –1. 3m A 25˚C A ˚C – 1 .8 m 125 mA θ j - a (˚ C/W) –2.0 Collector Current I C (A) .5 Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) –10 –8 –2 mA m A V CE ( sat ) – I B Characteristics (Typical) 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 5 8 –0.05 –2 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 47 (7 0 Ω ) E 2SB1560 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) Ratings Unit ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V V V(BR)CEO IC=–30mA –150min –10 A hFE VCE=–4V, IC=–7A 5000min∗ IB –1 A VCE(sat) IC=–7A, IB=–7mA –2.5max PC 100(Tc=25°C) W VBE(sat) IC=–7A, IB=–7mA –3.0max V Tj 150 °C fr VCE=–12V, IE=2A 50typ MHz –55 to +150 °C VCB=–10V, f=1MHz 230typ pF COB 4.0 –5 IC 19.9±0.3 VEBO Tstg 15.6±0.4 9.6 1.8 Conditions V 5.0±0.2 Unit –160 2.0 Ratings Symbol External Dimensions MT-100(TO3P) (Ta=25°C) VCBO Symbol C Application : Audio, Series Regulator and General Purpose ■Electrical Characteristics (Ta=25°C) Equivalent circuit a 4.8±0.2 2.0±0.1 ø3.2±0.1 b V 2 4.0max ■Absolute maximum ratings 20.0min Darlington B 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –70 10 –7 –10 5 –7 7 0.8typ 3.0typ 1.2typ 0 0 –2 –4 –2 0 –0.2 –6 –0.5 –1 Collector-Emitter Voltage V C E (V) –5 –10 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 50000 DC Curr ent Gain h F E DC Curr ent Gain h F E 40,000 Typ 10,000 5,000 125˚C 10000 25˚C 5000 –30˚C 1000 –1 –5 –10 500 –0.2 –0.5 Collector Current I C (A) –1 –5 –10 –10 0.1 1 5 ) 10 500 1000 2000 P c – T a Derating 100 10 DC –5 10 0m m s s ite he 50 at si nk Without Heatsink Natural Cooling fin –0.5 In –1 20 50 100 Time t(ms) ith 40 ) 0.5 W Typ Temp 1 Maxim um Power Dissipation P C (W) 80 Co lle ctor Cu rre nt I C ( A) –30 –2.5 3 Safe Operating Area (Single Pulse) 100 –2 θ j-a – t Characteristics (V C E =–12V) Cut- off F req uency f T (M H Z ) –1 Collector Current I C (A) f T – I E Characteristics (Typical) 60 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –50 –100 –200 Base Current I B (mA) h FE – I C Characteristics (Typical) 1,000 –0.2 –4 Temp –7A I C =–5A –1 –6 (Case –2 –10A –30˚C I B =–0.4mA –2 mp) –0.6m A –8 (Case –0.8m A (V C E =–4V) 25˚C –1.0 mA Transient Thermal Resistance Collector Current I C (A) –1. 2mA –4 –10 e Te –1 .5m A –6 –3 (Cas mA –8 I C – V BE Temperature Characteristics (Typical) 125˚C – 2 .0 1.4 E V CE ( sat ) – I B Characteristics (Typical) Collector Current I C (A) . C Weight : Approx 6.0g a. Part No. b. Lot No. θ j - a ( ˚ C/W) –2 –10 mA –10 A 5m Collector-Emitter Saturation Voltage V C E (s at ) (V ) I C – V CE Characteristics (Typical) 5.45±0.1 B –0.1 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 48 5 10 –0.05 –3 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 (7 0 Ω ) E 2SB1570 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) Symbol ICBO Ratings Unit –100max µA 24.4±0.2 VEB=–5V –100max µA –150min V hFE VCE=–4V, IC=–7A 5000min∗ VCE(sat) IC=–7A, IB=–7mA –2.5max V W VBE(sat) IC=–7A, IB=–7mA –3.0max V 150 °C fT VCE=–12V, IE=2A 50typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 230typ pF IC –12 A IB –1 A PC 150(Tc=25°C) Tj 2-ø3.2±0.1 9 7 V V(BR)CEO a b 2 3 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –70 10 –7 –10 5 –7 7 0.8typ 3.0typ 1.2typ –1.2m A –1.0 mA –0.8m A –0.6mA –4 I B =–0.4mA –2 0 0 –2 –4 –10 –2 –10A –7A I C =–5A –1 0 –0.2 –6 h FE – I C Characteristics (Typical) –0.5 –1 –5 –10 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) Typ 10,000 5,000 –5 –10–12 Transient Thermal Resistance D C Cur r ent Gai n h F E 125˚C 25˚C 10000 –30˚C 5000 1000 800 –0.2 –0.5 Collector Current I C (A) 80 –10 –1 –5 0.5 0.1 1 –10 –12 5 10 10 0m DC m s s ite he 80 at si nk Without Heatsink Natural Cooling fin –0.5 120 40 –0.1 1 Emitter Current I E (A) 5 10 2000 P c – T a Derating –1 –0.05 –3 500 1000 160 –5 20 100 In 40 0.5 50 Time t(ms) ith Typ 0.05 0.1 10 W Collecto r Cur rent I C (A) 100 –2.5 1 Safe Operating Area (Single Pulse) –30 –2 θ j-a – t Characteristics (V C E =–12V) 0 0.02 –1 Collector Current I C (A) f T – I E Characteristics (Typical) Cut- off F re quen cy f T (MH Z ) 0 2 M aximu m Power Dissip ation P C (W) D C Cur r ent Gai n h F E 0 Base-Emittor Voltage V B E (V) 50000 60 –4 –50 –100 –200 (V C E =–4V) –1 –6 Base Current I B (mA) 40,000 –0.5 –8 –2 Collector-Emitter Voltage V C E (V) 1,000 –0.2 (V C E =–4V) mp) Collector Current I C (A) –1.5 mA –6 –12 e Te –2 .0m A –10 –8 –3 (Cas –2 .0 m A 125˚C A I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) m E Weight : Approx 18.4g a. Part No. b. Lot No. θ j- a ( ˚C/W) 0 –1 C V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –12 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 mp) Temp ) IEBO 2.1 (Case V –5 21.4±0.3 –150 VEBO 6.0±0.2 36.4±0.3 IC=–30mA VCEO Tstg Conditions VCB=–160V –30˚C V External Dimensions MT-200 (Ta=25°C) e Te Unit –160 ■Electrical Characteristics (Cas Ratings VCBO C Application : Audio, Series Regulator and General Purpose 25˚C Symbol Equivalent circuit 4.0max ■Absolute maximum ratings (Ta=25°C) 20.0min Darlington B –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 49 (7 0 Ω ) E 2SB1587 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2438) Unit Conditions Ratings Unit –160 V ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA VEBO –5 V V(BR)CEO IC=–30mA –150min V IC –8 A hFE VCE=–4V, IC=–6A 5000min∗ IB –1 A VCE(sat) IC=–6A, IB=–6mA –2.5max PC 75(Tc=25°C) W VBE(sat) IC=–6A, IB=–6mA –3.0max V Tj 150 °C fT VCE=–12V, IE=1A 65typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 160typ pF Tstg 3.0 3.3 1.75 IC (A) 1.05 +0.2 -0.1 5.45±0.1 10 –60 –6 5 –10 4.4 B 0.9typ 3.6typ 3.35 1.5 Weight : Approx 6.5g a. Part No. b. Lot No. tf (µs) tstg (µs) 0.7typ 6 –6 I C – V CE Characteristics (Typical) ton (µs) IB2 (mA) 0.65 +0.2 -0.1 5.45±0.1 1.5 IB1 (mA) VBB2 (V) VBB1 (V) 0.8 2.15 ■Typical Switching Characteristics (Common Emitter) RL (Ω) 3.45 ±0.2 ø3.3±0.2 a b V ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) VCC (V) 5.5±0.2 5.5 15.6±0.2 23.0±0.3 Symbol 0.8±0.2 Ratings VCBO Symbol External Dimensions FM100(TO3PF) (Ta=25°C) 1.6 ■Electrical Characteristics (Ta=25°C) C Application : Audio, Series Regulator and General Purpose 9.5±0.2 ■Absolute maximum ratings Equivalent circuit 16.2 Darlington B C E I C – V BE Temperature Characteristics (Typical) 0 –2 0 –4 0 –0.2 –6 –0.5 –1 –5 –10 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 40,000 50000 10,000 5,000 –1 –5 –8 Transient Thermal Resistance Typ DC C urrent G ain h FE 25˚C 10000 –30˚C 5000 1000 –0.2 –0.5 Collector Current I C (A) –1 –5 0.2 –8 C m s s –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 mp) nk 8 si 5 40 at –0.1 he Without Heatsink Natural Cooling 60 ite Collecto r Cur rent I C (A) D 10 0m –0.5 –0.05 –2 e Te P c – T a Derating –1 20 500 1000 fin 40 Cas 50 100 Time t(ms) In 60 50 10 ith Typ 1 5 W Cut- off F req uenc y f T (MH Z ) 10 –5 0.5 1 80 –10 Emitter Current I E (A) p) 0.5 –20 80 ) 1 Safe Operating Area (Single Pulse) 100 –3 4 (V C E =–12V) 0.1 –2 Collector Current I C (A) f T – I E Characteristics (Typical) 0.05 –1 θ j-a – t Characteristics M aximum Po wer Dissipat io n P C (W) DC Curr ent Gain h F E 125˚C 0 0.02 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –50 –100 –200 Base Current I B (mA) h FE – I C Characteristics (Typical) 2,000 –0.2 Tem –2 Collector-Emitter Voltage V C E (V) emp –1 –4 ˚C ( –2 –6A I C =–4A se T I B =–0.3mA –8A –6 –30 –0.5m A –4 –2 se –0.8m A (Ca –1 .0 mA –6 (V C E =–4V) –8 –3 (Ca A – 1 .5 m –1. 3m A 25˚C A ˚C – 1 .8 m 125 mA θ j- a ( ˚C/W) –2.0 Collector Current I C (A) .5 Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) –10 –8 –2 mA m A V CE ( sat ) – I B Characteristics (Typical) 20 3.5 0 Without Heatsink 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150 2000 (7 0 Ω ) E 2SB1588 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2439) Ratings Unit VCBO –160 V ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V Ratings Unit 15.6±0.2 –5 V V(BR)CEO IC=–30mA –150min IC –10 A hFE VCE=–4V, IC=–7A 5000min∗ IB –1 A VCE(sat) IC=–7A, IB=–7mA –2.5max PC 80(Tc=25°C) W VBE(sat) IC=–7A, IB=–7mA –3.0max V Tj 150 °C fT VCE=–12V, IE=2A 50typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 230typ pF 23.0±0.3 VEBO 3.0 3.3 1.75 1.05 +0.2 -0.1 5.45±0.1 –4 I B =–0.4mA –2 0 –2 0 –4 –7A I C =–5A –1 0 –0.2 –0.5 –1 –5 –10 (V C E =–4V) 50,000 DC Cur rent Gain h FE Typ 10,000 5,000 125˚C 10,000 25˚C 5,000 –30˚C 1,000 –5 –10 500 –0.2 –0.5 Collector Current I C (A) –1 –5 –10 1 0.5 0.1 5 P c – T a Derating m s s DC si nk Without Heatsink Natural Cooling 40 at –0.5 he –1 60 ite Maxim um Power Dissip ation P C (W) 10 0m fin Co lle ctor Cu rre nt I C (A) 10 –5 20 20 –0.1 0.5 1 Emitter Current I E (A) 5 10 –0.05 –3 2000 In 40 500 1000 ith Typ 50 100 80 –10 0.05 0.1 10 W Cut -off Fre quen cy f T (M H Z ) 1 Time t(ms) –30 80 –2.5 3 Safe Operating Area (Single Pulse) 100 –2 θ j-a – t Characteristics (V C E =–12V) 0 0.02 –1 Collector Current I C (A) f T – I E Characteristics (Typical) 60 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 40,000 DC Cur rent Gain h FE 0 –50 –100 –200 Base Current I B (mA) (V C E =–4V) –1 –4 –2 –6 h FE – I C Characteristics (Typical) –0.5 –6 ) –10A Collector-Emitter Voltage V C E (V) 1,000 –0.2 –8 ) –0.6m A –2 (V C E =–4V) Temp –0.8m A –6 –10 Temp –1.0 mA –3 Transient Thermal Resistance Collector Current I C (A) –1. 2mA I C – V BE Temperature Characteristics (Typical) (Case –1 .5m A –8 V CE ( sat ) – I B Characteristics (Typical) (Case mA 1.2typ E (Cas – 2 .0 Collector-Emitter Saturation Voltage V C E (s a t) (V ) –2 A –10 mA –10 m .5 3.0typ C mp) I C – V CE Characteristics (Typical) 0.8typ 7 –7 Weight : Approx 6.5g a. Part No. b. Lot No. tf (µs) B 3.35 1.5 e Te 5 –10 tstg (µs) 4.4 125˚C –7 ton (µs) IB2 (mA) IB1 (mA) Collector Current I C (A) 10 VBB2 (V) VBB1 (V) 0.65 +0.2 -0.1 5.45±0.1 1.5 θ j - a ( ˚C/W) –70 IC (A) 0.8 2.15 ■Typical Switching Characteristics (Common Emitter) RL (Ω) 3.45 ±0.2 ø3.3±0.2 a b V ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) VCC (V) 5.5±0.2 –30˚C Tstg 0.8±0.2 Conditions 5.5 Symbol 25˚C Symbol External Dimensions FM100(TO3PF) (Ta=25°C) 1.6 ■Electrical Characteristics (Ta=25°C) C Application : Audio, Series Regulator and General Purpose 9.5±0.2 ■Absolute maximum ratings Equivalent circuit 16.2 Darlington B –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 51 (7 0 Ω ) E 2SB1647 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560) –100max µA V IEBO VEB=–5V –100max µA V VEBO –5 V V(BR)CEO IC –15 A hFE IC=–30mA –150min VCE=–4V, IC=–10A 5000min∗ A VCE(sat) IC=–10A, IB=–10mA –2.5max IC=–10A, IB=–10mA –3.0max V VCE=–12V, IE=2A 45typ MHz VCB=–10V, f=1MHz 320typ IB –1 PC 130(Tc=25°C) W VBE(sat) Tj 150 °C fT –55 to +150 °C Tstg COB 15.6±0.4 9.6 2.0 VCB=–150V 1.8 –150 ICBO a pF ø3.2±0.1 2 3 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –40 4 10 –10 5 –10 10 0.7typ 1.6typ 1.1typ –4 I C =–5A –1 –0.5 –1 –10 10,000 5,000 –1 –5 –10 –15 25˚C –30˚C 10000 5000 1000 –0.2 –0.5 Collector Current I C (A) –1 –5 –10 –15 p) 1 at si nk Without Heatsink Natural Cooling he –0.5 ite –1 100 fin M aximum Po wer Dissipat io n P C (W) s In Collect or Cur ren t I C ( A) m s ith DC 10 0m 50 –0.1 0.5 1 Emitter Current I E (A) 52 5 10 1000 2000 P c – T a Derating –5 –0.05 –3 100 Time t(ms) W –10 0.05 0.1 ) 10 130 10 Cut -off Fre quen cy f T (MH Z ) Tem 0.1 –50 20 emp 0.5 Safe Operating Area (Single Pulse) 40 –3 1 (V C E =–12V) 60 –2 3 Collector Current I C (A) f T – I E Characteristics (Typical) 0 0.02 –1 θ j-a – t Characteristics θ j- a ( ˚ C/ W) 125˚C Transient Thermal Resistance Typ –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) 50000 1,000 –0.2 0 –50 –100 –200 h FE – I C Temperature Characteristics (Typical) DC C urrent G ain h FE DC C urrent G ain h FE –5 Base Current I B (mA) (V C E =–4V) 50,000 –5 –30 0 –0.2 –6 Collector-Emitter Voltage V C E (V) h FE – I C Characteristics (Typical) se T I C =–1 0A –10 se I C =–15A (Ca –2 (V C E =–4V) (Ca –5 –2 –15 ˚C I B =–0.3mA 0 –3 25˚C –0. 5m A 0 I C – V BE Temperature Characteristics (Typical) 125 –0.8 mA –10 1.4 E Weight : Approx 6.0g a. Part No. b. Lot No. Collector Current I C (A) A m –2 Collector Current I C (A) –1 .0m A C V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) –1.5mA 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) –15 2.0±0.1 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) –50mA –10mA –3mA 4.8±0.2 b V ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) I C – V CE Characteristics (Typical) 5.0±0.2 VCEO Unit mp) V Ratings e Te –150 External Dimensions MT-100(TO3P) (Ta=25°C) Conditions Cas VCBO ■Electrical Characteristics Symbol C ˚C ( Unit 4.0 Ratings 19.9±0.3 Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) Equivalent circuit Application : Audio, Series Regulator and General Purpose 20.0min Darlington B –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 (70Ω) E 2SB1648 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Unit –150 V Symbol ICBO VCEO –150 V IEBO VEBO –5 V V(BR)CEO IC –17 A hFE IB –1 A VCE(sat) PC 200(Tc=25°C) W VBE(sat) Tj 150 °C fT Tstg –55 to +150 Ratings Unit –100max µA 36.4±0.3 24.4±0.2 VEB=–5V –100max µA IC=–30mA –150min V VCE=–4V, IC=–10A 5000min∗ IC=–10A, IB=–10mA –2.5max V IC=–10A, IB=–10mA –3.0max V VCE=–12V, IE=2A 45typ MHz COB °C Conditions VCB=–150V 320typ VCB=–10V, f=1MHz 6.0±0.2 2.1 2-ø3.2±0.1 9 7 Ratings VCBO pF a b 2 3 0.65 +0.2 -0.1 1.05 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –40 4 –10 –10 5 –10 10 0.7typ 1.6typ 1.1typ 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) I C – V CE Characteristics (Typical) C External Dimensions MT-200 (Ta=25°C) 21.4±0.3 Symbol ■Electrical Characteristics (Ta=25°C) 4.0max ■Absolute maximum ratings Equivalent circuit Application : Audio, Series Regulator and General Purpose 20.0min Darlington B C E Weight : Approx 18.4g a. Part No. b. Lot No. I C – V BE Temperature Characteristics (Typical) 0 –2 0 –4 0 –0.2 –6 –0.5 –1 Collector-Emitter Voltage V C E (V) –10 (V C E =–4V) 10,000 5,000 –1 –5 –10 –17 125˚C Transient Thermal Resistance Typ –0.5 25˚C –30˚C 10000 5000 1000 –0.2 –0.5 Collector Current I C (A) –1 –5 –10 –17 ) mp Te se (Ca 0.1 1 m s s –5 120 ) at si nk –0.05 –3 emp he 10 eT ite Without Heatsink Natural Cooling fin –1 –0.5 160 In Co lle ctor Cu rre nt I C (A) DC 10 0m ith Emitter Current I E (A) 5 1000 2000 W 1 100 P c – T a Derating 80 40 –0.1 0.5 Cas 10 Time t(ms) Maxim um Power Dissip ation P C (W) 10 0.05 0.1 –30 0.5 200 –10 20 p) 5˚C 1 –50 40 –3 2 Safe Operating Area (Single Pulse) 60 –2 θ j-a – t Characteristics (V C E =–12V) 0 0.02 –1 Collector Current I C (A) f T – I E Characteristics (Typical) Cut- off F req uenc y f T (MH Z ) 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 50000 1,000 –0.2 0 –50 –100 –200 (V C E =–4V) DC Curr ent Gain h FE DC Curr ent Gain h FE –5 Base Current I B (mA) h FE – I C Characteristics (Typical) 50,000 5 ˚C ( I C =–5A –1 10 12 I C =–1 0A Tem I B =–0.3mA –5 I C =–15A ase –0.5mA –2 C (C –0.8 mA –10 15 25˚ –1.0 mA (V C E =–4V) 17 –3 θ j - a ( ˚C/W) –50 –15 Collector Current I C (A) –1 .5 m A Collector Current I C (A) –2mA –3mA mA –17 Collector-Emitter Saturation Voltage V C E (s at) (V) –1 0m A V CE ( sat ) – I B Characteristics (Typical) –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 53 (7 0 Ω ) E 2SB1649 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Ratings Unit ICBO VCB=–150V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V °C fT –55 to +150 °C COB Tstg IC=–10A, IB=–10mA –3.0max V VCE=–12V, IE=2A 45typ MHz VCB=–10V, f=1MHz 320typ pF 3.0 150 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –40 4 –10 –10 5 –10 10 0.7typ 1.6typ 1.1typ –2 0 –4 –3 –15 I C =–1 0A I C =–5A –1 0 –0.2 –6 –0.5 –1 Collector-Emitter Voltage V C E (V) –10 10,000 5,000 –5 –10 –15 125˚C Transient Thermal Resistance Typ –1 p) 0 –1 25˚C –30˚C 10000 5000 1000 –0.2 –0.5 Collector Current I C (A) –1 –2 –5 –10 –15 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) –3 Base-Emittor Voltage V B E (V) (V C E =–4V) 50000 –0.5 0 –50 –100 –200 h FE – I C Temperature Characteristics (Typical) DC Curr ent Gain h F E DC Curr ent Gain h F E –5 (V C E =–4V) 1,000 –0.2 –5 Base Current I B (mA) h FE – I C Characteristics (Typical) 50,000 –10 Tem I C =–15A (V CE =–4V) se –2 θ j - a (˚C /W) 0 I C – V BE Temperature Characteristics (Typical) –30 –5 3.35 Weight : Approx 6.5g a. Part No. b. Lot No. E (Ca I B =–0.3mA C ˚C –0. 5m A 0.65 +0.2 -0.1 1.5 125 –0.8 mA –10 B Collector Current I C (A) A m –2 Collector Current I C (A) –1 .0m A 4.4 V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) –1.5mA –15 +0.2 -0.1 5.45±0.1 1.5 VCC (V) 0.8 2.15 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) –50mA –10mA –3mA 1.75 1.05 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) I C – V CE Characteristics (Typical) ø3.3±0.2 a b V mp) VBE(sat) Tj –2.5max eT e W IC=–10A, IB=–10mA 3.3 A 85(Tc=25°C) 5000min∗ Cas –1 PC –150min ˚C ( IB VCE(sat) IC=–30mA VCE=–4V, IC=–10A ) hFE emp V(BR)CEO A 3.45 ±0.2 seT V –15 5.5±0.2 (Ca –5 IC 15.6±0.2 25˚C VEBO 0.8±0.2 Conditions V 5.5 Unit –150 1.6 Ratings Symbol External Dimensions FM100(TO3PF) (Ta=25°C) 9.5±0.2 ■Electrical Characteristics VCBO Symbol C Application : Audio, Series Regulator and General Purpose 23.0±0.3 ■Absolute maximum ratings (Ta=25°C) Equivalent circuit 16.2 Darlington B Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 60 100 40 m s –5 ite he at si 40 20 –0.1 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 54 5 10 –0.05 –3 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 nk Without Heatsink Natural Cooling 60 fin –1 –0.5 80 In 20 DC s ith Collect or Cur re nt I C ( A) –10 10 0m W Cut- off F req uency f T (M H Z ) 10 Maxim um Power Dissipation P C (W) –50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 (70Ω) E 2SB1659 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2589) Conditions Ratings Unit V ICBO VCB=–110V –100max µA VCEO –110 V IEBO VEB=–5V –100max µA VEBO –5 V V(BR)CEO IC=–30mA –110min V IC –6 A hFE VCE=–4V, IC=–5A 5000min∗ IC=–5A, IB=–5mA –2.5max IC=–5A, IB=–5mA –3.0max V IB –1 A VCE(sat) PC 50(Tc=25°C) W VBE(sat) Tj 150 °C fT VCE=–12V, IE=0.5A 100typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 110typ pF Tstg 10.2±0.2 V 4.8±0.2 3.0±0.2 Unit –110 16.0±0.7 Symbol Ratings VCBO Symbol C External Dimensions MT-25(TO220) (Ta=25°C) 8.8±0.2 ■Electrical Characteristics 2.0±0.1 ø3.75±0.2 a b 1.35 4.0max ■Absolute maximum ratings (Ta=25°C) Equivalent circuit Application : Audio, Series Regulator and General Purpose 12.0min Darlington B 0.65 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 2.5 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –30 6 –5 –10 5 –5 5 1.1typ 3.2typ 1.1typ 0 –2 0 –4 –6 0 –0.1 –0.5 –1 –5 –10 h FE – I C Characteristics (Typical) (V C E =–4V) 40000 50000 5000 1000 500 –1 –5 –6 25˚C 10000 –30˚C 5000 1000 500 100 –0.02 –0.05 –0.1 –0.5 f T – I E Characteristics (Typical) –1 –5 –6 p) 30 eT e mp) ) Cas at si nk Ma ximum Po we r Dissipatio n P C (W) 40 he Emitter Current I E (A) 5 6 emp P c – T a Derating 50 ite 1 1000 2000 fin 0.5 100 Time t(ms) In 0.1 10 ith 20 0.05 1 W 40 0 0.02 Tem 0.4 120 60 ˚C ( 0.5 Safe Operating Area (Single Pulse) 80 –3 1 (V C E =–12V) Typ –2 5 Collector Current I C (A) Collector Current I C (A) 100 –1 θ j-a – t Characteristics Transient Thermal Resistance DC C urrent G ain h FE Typ 10000 Cut-o ff F requ ency f T (MH Z ) DC Curr ent Gain h F E 125˚C –0.5 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) (V C E =–4V) –0.05 –0.1 0 –50 –100 Base Current I B (mA) Collector-Emitter Voltage V C E (V) 200 –0.02 –2 –30 I C =–3A –1 –4 se –2 –5A seT I B =–0. 1mA –2 (Ca Collector Current I C (A) –0. 2m A –4 (V CE =–4V) –6 –3 (Ca –0 .3 m A ˚C A 25˚C .4m 125 –0 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) –0 V CE ( sa t ) – I B Characteristics (Typical) Weight : Approx 2.0g a. Part No. b. Lot No. θ j- a ( ˚C/W) –5m A –6 1.4 A Collector-Emitter Saturation Voltage V C E (s at) (V) –1 m A I C – V CE Characteristics (Typical) m .5 2.5 B C E 20 10 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 55 (7 0 Ω ) E 2SB1685 –110 V VCEO –110 VEBO –5 IC –6 IB –1 PC Tj Tstg C External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit ICBO VCB=–110V –100max µA V IEBO VEB=–5V –100max µA V V(BR)CEO IC=–30mA –110min V A hFE VCE=–4V, IC=–5A 5000min∗ A VCE(sat) IC=–5A, IB=–5mA –2.5max 60(Tc=25°C) W VBE(sat) IC=–5A, IB=–5mA –3.0max V 150 °C fT VCE=–12V, IE=0.5A 100typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 110typ pF 15.6±0.4 9.6 19.9±0.3 2.0 Conditions Symbol 1.8 VCBO ■Electrical Characteristics a 4.8±0.2 5.0±0.2 Unit 4.0 Ratings Symbol 2.0±0.1 ø3.2±0.1 b V 2 4.0max ■Absolute maximum ratings (Ta=25°C) Equivalent circuit Application : Audio, Series Regulator and General Purpose Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2641) 20.0min Darlington B 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –30 6 –5 –10 5 –5 5 1.1typ 3.2typ 1.1typ –2 –4 0 –0.1 –6 –0.5 –1 Collector-Emitter Voltage V C E (V) –5 –10 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 50000 50000 1000 500 –0.5 –1 –5 –6 Transient Thermal Resistance D C Cur r ent Gai n h F E Typ 5000 25˚C 10000 –30˚C 5000 1000 500 100 –0.01 –0.05 –0.1 Collector Current I C (A) –0.5 Typ p) mp) e Te emp ) Tem se se T (Cas –3 –1 5 1 0.5 –5 –6 1 5 10 50 100 500 1000 2000 Time t(ms) P c – T a Derating 60 –20 120 –2 θ j-a – t Characteristics Safe Operating Area (Single Pulse) (V C E =–12V) 25˚C –1 Collector Current I C (A) f T – I E Characteristics (Typical) s he at si nk Without Heatsink Natural Cooling 40 ite –1 –0.5 –0.1 20 m s fin 40 DC 0m In 60 10 10 ith Co lle ctor Cu rre nt I C (A) –5 80 W Maxim um Power Dissipation P C (W) –10 100 Cut-o ff Fr equ ency f T (M H Z ) D C Cur r ent Gai n h F E 125˚C –0.05 –0.1 0 Base-Emittor Voltage V B E (V) (V C E =–4V) 100 –0.01 0 –50 –100 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 –2 –30˚C I C =–3A –1 –4 (Ca –5A (Ca –2 125 I B =–0. 1mA –2 0 (V C E =–4V) –6 –3 θ j- a ( ˚C/W) Collector Current I C (A) –0. 2m A –4 0 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) –0 .3 m A 1.4 E Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at ) (V ) –5m A –6 A m 5mA –1 –0. A .4m –0 C ˚C I C – V CE Characteristics (Typical) 5.45±0.1 B 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 56 5 6 –0.05 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 (7 0 Ω ) E 2SB1686 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2642) V ICBO VCEO –110 V IEBO VEBO –5 V V(BR)CEO IC –6 A IB –1 PC Tj Ratings Unit VCB=–110V –100max µA –100max µA –110min V hFE VCE=–4V, IC=–5A 5000min∗ A VCE(sat) IC=–5A, IB=–5mA –2.5max 30(Tc=25°C) W VBE(sat) IC=–5A, IB=–5mA –3.0max V 150 °C fT VCE=–12V, IE=0.5A 100typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 110typ pF 16.9±0.3 VEB=–5V IC=–30mA 10.1±0.2 ø3.3±0.2 a b 3.9 V 1.35±0.15 1.35±0.15 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) IC (A) –5 5 –10 –4 0 –0.1 –6 –0.5 –1 Collector-Emitter Voltage V C E (V) –5 –10 (V C E =–4V) 50000 D C Cur r ent Gai n h F E Typ 5000 1000 500 –1 –5 –6 25˚C 10000 –30˚C 5000 1000 500 100 –0.01 –0.05 –0.1 Collector Current I C (A) –0.5 p) (Cas e Te mp) ) Tem emp –2 –3 –1 –5 –6 θ j-a – t Characteristics 5.0 1.0 0.5 0.3 1 10 100 1000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 120 –30˚C –1 Collector Current I C (A) f T – I E Characteristics (Typical) 30 –20 10 Typ C –0.1 nk 20 si Without Heatsink Natural Cooling at –0.5 he –1 20 ite Co lle ctor Cu rren t I C (A) s s fin 40 m In 60 D 0m ith 80 10 W –5 M aximu m Power Dissip ation P C (W) –10 100 Cut-o ff Fr equ ency f T (MH Z ) D C Cur r ent Gai n h F E 125˚C –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.05 –0.1 0 –50 –100 h FE – I C Temperature Characteristics (Typical) 50000 100 –0.01 –2 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 se I C =–3A –1 –4 se T –5A (Ca –2 (Ca Collector Current I C (A) I B =–0. 1mA –2 –2 (V C E =–4V) –6 –3 25˚C –0 .3 m A ˚C mA –0. 2m A 0 I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) –4 0 1.1typ 125 . .4 –0 3.2typ B C E Collector Current I C (A) –0 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) A Collector-Emitter Saturation Voltage V C E (s at) (V ) A m –1 –5m A –6 5m tstg (µs) 1.1typ 5 –5 I C – V CE Characteristics (Typical) ton (µs) IB2 (mA) IB1 (mA) θ j- a ( ˚ C/W) 6 –30 VBB2 (V) VBB1 (V) 2.4±0.2 2.2±0.2 Transient Thermal Resistance RL (Ω) VCC (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) 4.2±0.2 2.8 c0.5 4.0±0.2 –110 External Dimensions FM20(TO220F) (Ta=25°C) Conditions 0.8±0.2 VCBO Symbol ±0.2 Unit Tstg Application : Audio, Series Regulator and General Purpose ■Electrical Characteristics (Ta=25°C) Ratings Symbol C 8.4±0.2 ■Absolute maximum ratings Equivalent circuit 13.0min Darlington B 10 Without Heatsink 2 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 5 6 –0.05 –3 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 57 (7 0 Ω ) E 2SB1687 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2643) –110 V VCEO –110 VEBO IC IB Unit ICBO VCB=–110V –100max µA V IEBO VEB=–5V –100max µA –5 V V(BR)CEO IC=–30mA –110min V –6 A hFE VCE=–4V, IC=–5A 5000min∗ –1 A VCE(sat) IC=–5A, IB=–5mA –2.5max PC 60(Tc=25°C) W VBE(sat) Tj 150 °C fT VCE=–12V, IE=0.5A –100typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz –110typ pF IC (A) 3.0 1.05 –5 –5 5 –10 –4 0 –0.1 –6 –0.5 –1 Collector-Emitter Voltage V C E (V) –5 –10 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 50000 50000 1000 500 –1 –5 –6 Transient Thermal Resistance DC Cur rent Gain h F E Typ 5000 25˚C 10000 –30˚C 5000 1000 500 100 –0.01 –0.05 –0.1 Collector Current I C (A) –0.5 Typ p) mp) emp e Te –3 –1 5 1 0.5 1 –5 –6 10 100 1000 2000 Time t(ms) P c – T a Derating 60 –20 120 –2 θ j-a – t Characteristics Safe Operating Area (Single Pulse) (V C E =–12V) ) Tem –1 Collector Current I C (A) f T – I E Characteristics (Typical) 10 he at si nk Without Heatsink Natural Cooling 40 ite –1 –0.5 –0.1 20 s s fin 40 m In 60 DC 0m ith 80 10 W Collector Curre nt I C (A) –5 Ma xim um Powe r Dissipation P C ( W) –10 100 Cut- off Fr equ ency f T (M H Z ) DC Cur rent Gain h F E 125˚C –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.05 –0.1 0 –50 –100 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 –2 (Cas I C =–3A –1 –4 se –5A se T –2 –30˚C –2 –2 (V C E =–4V) –6 –3 (Ca Collector Current I C (A) I B =–0. 1mA 100 –0.01 Weight : Approx 6.5g a. Part No. b. Lot No. E (Ca –0 .3 m A ˚C mA 3.35 I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) –0. 2m A 0 C A –4 0 B 1.1typ 0.65 +0.2 -0.1 1.5 25˚C .4 –0 3.2typ 4.4 125 – m 1.1typ +0.2 -0.1 5.45±0.1 tf (µs) Collector Current I C (A) –5m A –6 5 0. Collector-Emitter Saturation Voltage V C E (s at) (V ) –1 m A I C – V CE Characteristics (Typical) 5 tstg (µs) θ j- a (˚ C/W) 6 –30 ton (µs) IB2 (mA) 0.8 2.15 1.5 IB1 (mA) VBB2 (V) VBB1 (V) 1.75 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) 3.45 ±0.2 3.3 V ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) VCC (V) 5.5±0.2 ø3.3±0.2 a b V –3.0max IC=–5A, IB=–5mA 15.6±0.2 23.0±0.3 Ratings Tstg External Dimensions FM100(TO3P) (Ta=25°C) Conditions 0.8±0.2 VCBO Symbol 5.5 Unit 1.6 ■Electrical Characteristics (Ta=25°C) Ratings Symbol 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 58 5 6 C Application : Audio, Series Regulator and General Purpose 9.5±0.2 ■Absolute maximum ratings Equivalent circuit 16.2 Darlington B –0.05 –5 –10 –50 –100 –150 Collector-Emitter Voltage V C E (V) 3.5 0 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150 2SC2023 Silicon NPN Triple Diffused Planar Transistor mA V IEBO VEB=6V 1.0max mA 6 V V(BR)CEO IC=25mA 300min V 2 A hFE VCE=4V, IC=0.5A 30min IB 0.2 A VCE(sat) IC=1.0A, IB=0.2A 1.0max V PC 40(Tc=25°C) W fT VCE=12A, IE=–0.2A 10typ MHz Tj 150 °C COB VCB=10V, f=1MHz 75typ pF –55 to +150 °C IC (A) VB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 100 100 1.0 –5 100 –200 0.3typ 4.0typ 1.0typ 2 3 1 0 4 0 0.1 0.2 h FE – I C Temperature Characteristics (Typical) (V C E =4V) Typ ˚C 25˚C 50 –30 10 3 10 100 125 100 Transient Thermal Resistance DC Cur rent Gain h F E 200 50 1000 2000 5 mp) 0.2 ˚C 10 50 0.4 f T – I E Characteristics (Typical) 500 1000 2000 100 0.5 0.2 1 10 100 P c – T a Derating 40 Natural Cooling Silicone Grease Heatsink: Aluminum in mm s he 20 at 150x150x2 si nk Without Heatsink Natural Cooling 0.05 ite 0.1 fin 0.5 In 1 30 ith C W Ma ximum Po we r Dissipatio n P C ( W) s ms D 1m 20 5m Typ Collector Curr ent I C (A) 1000 2000 Time t(ms) 5 10 1.0 1 10 20 0.8 5 Safe Operating Area (Single Pulse) (V C E =12V) 0.6 θ j-a – t Characteristics Collector Current I C (mA) Collector Current I C (mA) Cut-o ff F requ ency f T (MH Z ) DC Cur rent Gain h F E 200 10 0 Base-Emittor Voltage V B E (V) (V C E =4V) 3 0 0.3 Base Current I B (A) h FE – I C Characteristics (Typical) 100 e Te 2A I C =1A Collector-Emitter Voltage V C E (V) 1 (Cas A /s to p 2 θ j - a (˚C /W ) I B =2 0m (V CE =4V) 2 Collector Current I C (A) 1 1.4 I C – V BE Temperature Characteristics (Typical) 3 Collector-Emitter Saturation Voltage V C E (s at) (V) Collector Current I C (A) mA 2.5 Weight : Approx 2.6g a. Part No. b. Lot No. V CE ( sa t ) – I B Characteristics (Typical) 2 1 1.35 125˚C I C – V CE Characteristics (Typical) 0 b B C E RL (Ω) 0 ø3.75±0.2 a 2.5 VCC (V) I 2.0±0.1 0.65 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 200 B= 4.8±0.2 p) Tstg 10.2±0.2 mp) IC 1.0max ase Te VEBO VCB=300V ase Tem 300 ICBO –30˚C (C VCEO Unit 3.0±0.2 V Ratings 25˚C (C 300 External Dimensions MT-25(TO220) (Ta=25°C) Conditions 16.0±0.7 VCBO Symbol 8.8±0.2 Unit 4.0max ■Electrical Characteristics (Ta=25°C) Ratings Symbol 12.0min ■Absolute maximum ratings Application : Series Regulator, Switch, and General Purpose 100x100x2 10 50x50x2 Without Heatsink 0 –0.003 0.02 –0.01 –0.05 –0.1 Emitter Current I E (A) –0.5 –1 2 10 100 Collector-Emitter Voltage V C E (V) 500 2 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 59 2SC2837 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1186) VCB=150V 100max µA V IEBO VEB=5V 100max µA IC=25mA 150min V hFE VCE=4V, IC=3V 50min∗ V 2 A VCE(sat) IC=5A, IB=0.5A PC 100(Tc=25°C) W fT VCE=12V, IE=–1A 70typ MHz Tj 150 °C COB VCB=80V, f=1MHz 60typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 20.0min IB Tstg IC (A) VB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 60 12 5 –5 500 –500 0.2typ 1.4typ 0.35typ I B =20mA 2 0 0 1 2 3 0 4 0 0.5 1.0 1.5 0 2.0 (V C E =4V) 200 200 1 25˚C 100 –30˚C 50 20 0.02 10 Transient Thermal Resistance D C Cur r ent Gai n h F E Typ 50 0.05 0.1 0.5 f T – I E Characteristics (Typical) 1 5 10 3 1 0.5 0.2 1 10 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) (V C E =12V) 2 θ j-a – t Characteristics Collector Current I C (A) Collector Current I C (A) P c – T a Derating 100 30 m s 100 Collector-Emitter Voltage V C E (V) 200 nk 10 si 2 50 at –6 he –1 ite 0.2 –0.1 Emitter Current I E (A) 60 Without Heatsink Natural Cooling 0.5 20 0 –0.02 1 fin 40 C In 60 D 5 ith Collector Curre nt I C ( A) 10 Typ 80 W M aximum Power Dissipa ti on P C (W) 10 100 Cu t-off Fr eque ncy f T ( MH Z ) DC Curr ent Gain h FE 125˚C 120 1 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) (V C E =4V) 0.1 0 Base Current I B (A) h FE – I C Characteristics (Typical) 20 0.02 p) 2 5A Collector-Emitter Voltage V C E (V) 100 4 em I C =10A 1 eT 40mA as 4 6 (C 80mA 2 5˚C 12 0m A 6 8 12 A A 160m (V CE =4V) 10 3 Collector Current I C (A) 200m 8 Collector Current I C (A) A 1.4 E I C – V BE Temperature Characteristics (Typical) θ j - a (˚ C/W) 300m C Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 0.65 +0.2 -0.1 5.45±0.1 B RL (Ω) m 400 2 3 5.45±0.1 VCC (V) 10 ø3.2±0.1 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) a b 2.0max p) V(BR)CEO A Tem V 10 se 5 IC (Ca VEBO 2.0±0.1 ˚C 150 4.8±0.2 –30 VCEO 15.6±0.4 9.6 ˚C V 25 150 1.8 ICBO VCBO 2.0 Unit Symbol External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit 5.0±0.2 ■Electrical Characteristics Conditions Ratings 19.9±0.3 Symbol 4.0 ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 4.0max LAPT 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC2921 Application : Audio and General Purpose Conditions Ratings Unit VCB=160V 100max µA VEB=5V 100max µA IC=25mA 160min V VCEO 160 V IEBO VEBO 5 V V(BR)CEO IC 15 A hFE VCE=4V, IC=5A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 150(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 200typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Tstg 24.4±0.2 9 a b 2 3 5.45±0.1 VCC (V) RL (Ω) IC (A) VB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 60 12 5 –5 500 –500 0.2typ 1.5typ 0.35typ I B =20mA 0 0 1 2 3 0 4 0 0.2 0.4 0.6 0.8 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 200 1 100 25˚C –30˚C 50 20 0.02 10 15 Transient Thermal Resistance DC Cur r ent Gai n h F E Typ 50 Collector Current I C (A) 0.5 0.1 1 5 10 15 0.1 1 10 2000 P c – T a Derating m s C 100 Collector-Emitter Voltage V C E (V) 200 nk 10 si 2 80 at 0.3 he Without Heatsink Natural Cooling ite 1 fin 5 120 In Collector Curr ent I C (A) D 10 0.5 –10 1000 ith 20 100 Time t(ms) W 40 Emitter Current I E (A) 0.5 M aximu m Power Dissipat io n P C (W) 10 –1 1 160 Typ 60 –0.1 2 40 80 2 θ j-a – t Characteristics Safe Operating Area (Single Pulse) (V C E =12V) 0 –0.02 1 Collector Current I C (A) f T – I E Characteristics (Typical) Cut- off F re quen cy f T (MH Z ) DC Cur rent Gain h F E 125˚C 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 10 0.02 p) I C =10A 5A Collector-Emitter Voltage V C E (V) 100 5 se 1 (Ca 50mA 5 10 em 10 0m A 2 eT A 15 0m A as 200m 10 (C mA (V CE =4V) 5˚C Collector Current I C (A) 300 Weight : Approx 18.4g a. Part No. b. Lot No. 15 3 ˚C mA 12 400 E 25 mA Collector Current I C (A) 500 θ j - a (˚ C/W) A 3.0 +0.3 -0.1 5.45±0.1 C I C – V BE Temperature Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) A 0m 75 0m 60 0.65 +0.2 -0.1 1.05 +0.2 -0.1 B 15 2.1 2-ø3.2±0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 6.0±0.2 36.4±0.3 7 Symbol ICBO p) V Tem Unit 160 ˚C Ratings VCBO External Dimensions MT-200 (Ta=25°C) –30 Symbol ■Electrical Characteristics (Ta=25°C) 21.4±0.3 ■Absolute maximum ratings 4.0max Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) 20.0min LAPT 40 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 61 2SC2922 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216) ICBO Ratings Unit VCB=180V 100max µA VEB=5V 100max µA IC=25mA 180min V 24.4±0.2 180 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8V IB 5 A VCE(sat) IC=8A, IB=0.8A 2.0max V PC 200(Tc=25°C) W fT VCE=12V, IE=–2A 50typ MHz Tj 150 °C COB VCB=10V, f=1MHz 250typ pF –55 to +150 °C ∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) 7 a b VB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 40 4 10 –5 1 –1 0.2typ 1.3typ 0.45typ I B =20mA 0 0 1 2 3 0 4 0 0.2 0.4 0.6 0.8 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 Typ 50 5 10 125˚C Transient Thermal Resistance DC Cur rent Gain h F E 100 100 25˚C –30˚C 50 10 0.02 17 Collector Current I C (A) 0.1 0.5 1 5 10 17 100 Collector-Emitter Voltage V C E (V) 300 Collector Cur rent I C (A) p) nk 10 si 2 at Without Heatsink Natural Cooling he 1 120 ite 5 160 fin –10 1000 In 62 –5 100 ith Emitter Current I E (A) 10 W Maxim um Power Dissip ation P C (W) s DC 10 0.2 –1 1 200 0.5 –0.1 p) 0.1 P c – T a Derating m 20 Tem 0.5 Time t(ms) 10 40 0 –0.02 em 1 50 Typ 2.4 2 Safe Operating Area (Single Pulse) 80 2 θ j-a – t Characteristics (V C E =12V) 60 1 Collector Current I C (A) f T – I E Characteristics (Typical) Cut -off Fre quen cy f T ( MH Z ) DC C urrent G ain h FE 200 1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 0 1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 5 5A Collector-Emitter Voltage V C E (V) 10 0.02 eT I C =10A 1 se 50mA as 5 10 (C 100 mA 2 5˚C A 15 12 200m 10 Weight : Approx 18.4g a. Part No. b. Lot No. (V CE =4V) 25 30 0mA Collector Current I C (A) Collector Current I C (A) 15 mA mA 500 A 400m E 17 3 θ j - a (˚ C/W) 600 3.0 +0.3 -0.1 5.45±0.1 C I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 1.5 mA 0.65 +0.2 -0.1 1.05 +0.2 -0.1 B IC (A) 0 70 2 3 5.45±0.1 RL (Ω) 1A 9 21.4±0.3 30min∗ VCC (V) I C – V CE Characteristics (Typical) 2.1 2-ø3.2±0.1 ■Typical Switching Characteristics (Common Emitter) 17 6.0±0.2 36.4±0.3 VCEO Tstg External Dimensions MT-200 (Ta=25°C) Conditions (Ca V Symbol ˚C Unit 180 VCBO ■Electrical Characteristics –30 Ratings ˚C Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 20.0min LAPT 80 40 5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2000 2SC3179 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262) 100max µA V IEBO VEB=6V 100max µA 6 V V(BR)CEO V 4 A hFE IC=25mA 60min VCE=4V, IC=1V 40min V IB 1 A VCE(sat) IC=2A, IB=0.2A 0.6max PC 30(Tc=25°C) W fT VCE=12V, IE=–0.2A 15typ MHz Tj 150 °C COB VCB=10V, f=1MHz 60typ pF –55 to +150 °C IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 20 10 2 10 –5 200 –200 0.2typ 1.9typ 0.29typ 0 10mA 1 0 2 3 0 0.005 0.01 4 Collector-Emitter Voltage V C E (V) 0.05 0.1 0.5 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 100 50 1 100 25˚C –30˚C 50 20 0.02 4 Collector Current I C (A) 0.5 1 4 ) mp ) mp Te Te 1 1 10 100 1000 Time t(ms) P c – T a Derating 30 1m s 10 m s 10 5 he at si nk Without Heatsink Natural Cooling ite 0.5 fin 1 20 In C ith s D W 0m 10 1.2 θ j-a – t Characteristics 0.5 10 30 Typ 1.0 5 Safe Operating Area (Single Pulse) (V C E =12V) 20 0.8 Collector Current I C (A) f T – I E Characteristics (Typical) 40 0.1 Maximu m Power Dissipa tion P C (W) 0.5 125˚C Transient Thermal Resistance DC Curr ent Gain h FE Typ Co lle ctor Cu rre nt I C ( A) D C Cur r ent Gai n h F E 500 0.1 0.6 Base-Emittor Voltage V B E (V) (V C E =4V) Cut- off F req uency f T (M H Z ) 0 0.4 1 Base Current I B (A) h FE – I C Characteristics (Typical) 20 0.01 p) 1 2A I C =1 A se 3A 2 (Ca 1 0.5 em 20mA 3 eT 30mA 2 1.0 as 40mA (C 3 12 60mA (V CE =4V) 4 θ j- a ( ˚C/W) 0 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) =1 A 1.4 Weight : Approx 2.6g a. Part No. b. Lot No. V CE ( sa t ) – I B Characteristics (Typical) 4 2.5 5˚C I C – V CE Characteristics (Typical) IB 1.35 B C E RL (Ω) 80m b 2.5 VCC (V) A ø3.75±0.2 a 0.65 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 0m 2.0±0.1 ˚C Tstg 4.8±0.2 –30 IC se VEBO Ca 60 C( VCEO 10.2±0.2 25˚ V 3.0±0.2 VCB=80V 80 16.0±0.7 ICBO VCBO 8.8±0.2 Unit Symbol External Dimensions MT-25(TO220) (Ta=25°C) Ratings Unit 4.0max ■Electrical Characteristics Conditions Ratings Symbol 12.0min ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 10 Without Heatsink 2 0 –0.005 –0.01 0.2 –0.1 –0.5 –1 Emitter Current I E (A) –4 3 10 50 Collector-Emitter Voltage V C E (V) 100 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 63 2SC3263 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1294) Application : Audio and General Purpose Unit VCB=230V 100max µA VCEO 230 V IEBO VEB=5V 100max µA IC=25mA 230min V VCE=4V, IC=5A 50min∗ ø3.2±0.1 b IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 130(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 250typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 5.45±0.1 5.45±0.1 B VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 60 12 5 10 –5 500 –500 0.30typ 2.40typ 0.50typ 200m A 10 0m A 5 50mA I B =20mA 0 1 0 2 3 2 1 I C =10A 0 4 0 0.5 1.0 1.5 0 2.0 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 200 1 5 100 25˚C –30˚C 50 10 0.02 10 15 Transient Thermal Resistance DC C urrent G ain h FE Typ 50 Collector Current I C (A) 0.1 0.5 2 1 5 10 15 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 130 40 10 80 si nk Collector Curr ent I C (A) at Without Heatsink Natural Cooling he 0.5 20 ite 1 fin 40 100 In 60 DC 5 ith Typ s W 10 m Maxim um Power Dissip ation P C (W) 100 Cut- off F req uenc y f T (MH Z ) DC Curr ent Gain h F E 125˚C 0.5 1 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 Base Current I B (A) h FE – I C Characteristics (Typical) 10 0.02 5 5A Collector-Emitter Voltage V C E (V) 100 10 p) 10 eT em p Tem ) p) mA se 400 Ca mA C( Collector Current I C (A) 600 (V C E =4V) 15 3 25˚ A as 1.0 5˚C 5A 12 1. Collector Current I C (A) 0A I C – V BE Temperature Characteristics (Typical) θ j - a (˚ C/W) 3. 2. 1.4 E Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 0A 15 C (C I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 Tem Tstg a se hFE (Ca V(BR)CEO A 2.0±0.1 ˚C V 15 4.8±0.2 –30 5 IC 19.9±0.3 VEBO 15.6±0.4 9.6 1.8 Ratings ICBO 5.0±0.2 Conditions V 2.0 Unit 230 4.0 Symbol Ratings VCBO Symbol External Dimensions MT-100(TO3P) (Ta=25°C) 4.0max ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) 20.0min LAPT 50 Without Heatsink 0 –0.02 0.1 –0.1 –1 Emitter Current I E (A) 64 –10 3 10 100 Collector-Emitter Voltage V C E (V) 300 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC3264 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) ■Electrical Characteristics Symbol ICBO Unit VCB=230V 100max µA VEB=5V 100max µA IC=25mA 230min V 24.4±0.2 VCEO 230 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE VCE=4V, IC=5A 50min∗ IB 5 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 200(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 250typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) 21.4±0.3 7 9 a b 2 3 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 60 12 5 10 –5 0.5 –0.5 0.30typ 2.40typ 0.50typ A 400m 10 A A 200m 10 0m A 5 50mA I B =20mA 0 0 1 2 3 15 2 1 I C =10A 0 4 0 0.5 1.0 1.5 0 2.0 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 200 Typ 50 100 Transient Thermal Resistance DC Curr ent Gain h FE 100 25˚C –30˚C 50 10 5 10 17 0.02 Collector Current I C (A) 0.1 0.5 f T – I E Characteristics (Typical) 2 3 1 5 10 17 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 40 200 10 80 3 10 100 Collector-Emitter Voltage V C E (V) 300 Co lle ctor Cu rren t I C ( A) nk Emitter Current I E (A) –10 si –1 at 0.1 –0.1 he 0 –0.02 120 ite Without Heatsink Natural Cooling fin 0.5 20 In 1 ith 40 5 160 W Typ s DC 10 60 m Ma xim um Powe r Dissipat io n P C (W) 100 Cut-o ff Fr eque ncy f T ( MH Z ) DC Curr ent Gain h FE 125˚C 1 1 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 0 Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 5 5A Collector-Emitter Voltage V C E (V) 10 0.02 10 p) Collector Current I C (A) 600m em A 17 eT 1.0 15 (V C E =4V) 3 Cas A ˚C ( 1.5 125 0A Collector Current I C (A) 2. E I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) A C Weight : Approx 18.4g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 0 3. 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) 17 0.65 +0.2 -0.1 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 2.1 2-ø3.2±0.1 20.0min Tstg 6.0±0.2 36.4±0.3 mp) V Ratings e Te 230 VCBO External Dimensions MT-200 (Ta=25°C) Conditions (Cas Unit –30˚C Ratings 25˚C ■Absolute maximum ratings (Ta=25°C) Symbol Application : Audio and General Purpose 4.0max LAPT 80 40 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 65 2SC3284 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303) Ratings Unit ICBO VCB=150V 100max µA VCEO 150 V IEBO VEB=5V 100max µA IC=25mA 150min V VCE=4V, IC=5A 50min∗ A VCE(sat) IC=5A, IB=0.5A 2.0max V 125(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 200typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 20.0min 3 PC 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 60 12 5 10 –5 0.5 –0.5 0.2typ 1.5typ 0.35typ I B =20mA 0 0 1 2 3 5A 0 4 0 0.2 0.4 0.6 0.8 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 200 Typ 50 1 5 100 25˚C –30˚C 50 20 0.02 10 14 Transient Thermal Resistance DC Cur rent Gain h FE DC Curr ent Gain h F E 125˚C 0.5 Collector Current I C (A) 0.1 0.5 p) 1 2 1 5 10 14 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Tem 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 20 0.02 p) I C =10A Collector-Emitter Voltage V C E (V) 100 5 se 1 em 50mA 4 10 eT 10 0m A 8 2 as 15 0m A (C A 5˚C Collector Current I C (A) 200m 12 3 (V C E =4V) 14 3 Collector Current I C (A) 12 A 00m 1.4 E I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) mA C Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 400 75 0m A 14 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) A 0m 60 mA 0 0 5 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.2±0.1 b IB Tstg a (Ca hFE 2.0±0.1 ˚C V(BR)CEO A 4.8±0.2 –30 V 14 ˚C 5 IC 19.9±0.3 VEBO 15.6±0.4 9.6 1.8 Conditions V 5.0±0.2 Unit 150 2.0 Ratings VCBO Symbol External Dimensions MT-100(TO3P) (Ta=25°C) 25 Symbol ■Electrical Characteristics (Ta=25°C) 4.0 ■Absolute maximum ratings Application : Audio and General Purpose 4.0max LAPT Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 40 130 1m 10 Typ C 10 100 Collector-Emitter Voltage V C E (V) 200 nk 3 si –10 at –1 he Without Heatsink Natural Cooling 100 ite 1 0.2 –0.1 Emitter Current I E (A) 66 s 5 0.5 0 –0.02 m s fin 20 D 0m In 40 10 ith Collector Curre nt I C ( A) 60 s W Cut-o ff F requ ency f T (MH Z ) 10 Maxim um Power Dissip ation P C (W) 80 50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC3519/3519A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A) V VCB= VEBO 5 V IEBO IC 15 A V(BR)CEO IB 4 A hFE PC 130(Tc=25°C) W VCE(sat) Tj 150 °C fT –55 to +150 °C COB VCB=10V, f=1MHz 180 160 V 50min∗ IC=5A, IB=0.5A 2.0max V VCE=12V, IE=–2A 50typ MHz 250typ pF ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 40 4 10 10 –5 1 –1 0.2typ 1.3typ 0.45typ I B =20mA 0 0 1 2 3 0 4 0 0.2 0.4 0.6 0.8 h FE – I C Temperature Characteristics (Typical) (V C E =4V) DC Cur rent Gain h FE Typ 50 5 125˚C 100 25˚C –30˚C 50 10 0.02 10 15 0.1 Collector Current I C (A) 0.5 1 5 10 15 0.1 Co lle ctor Cu rr ent I C (A) ) mp Te nk Collector-Emitter Voltage V C E (V) 2 200 si 100 at –10 50 he –5 10 ite 1.2SC3519 2.2SC3519A fin Without Heatsink Natural Cooling 100 In 1 0.5 1 –1 1000 2000 ith M aximum Power Dissipa ti on P C (W) ms DC 5 0.05 5 100 P c – T a Derating 0.1 Emitter Current I E (A) 10 W 20 –0.1 1 Time t(ms) 10 0 –0.02 p) 0.5 130 10 40 se 1 40 Typ (Ca 3 Safe Operating Area (Single Pulse) 80 2 θ j-a – t Characteristics (V C E =12V) 60 1 Collector Current I C (A) f T – I E Characteristics (Typical) Cut-o ff F requ ency f T (MH Z ) DC Curr ent Gain h F E 100 Transient Thermal Resistance 300 300 1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 0 1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 5 5A Collector-Emitter Voltage V C E (V) 10 0.02 em I C =10A 1 ˚C 50mA eT 5 10 as 10 0m A 2 (C A C 200m 10 25 mA (V C E =4V) 5˚ 300 1.4 E 15 3 12 A Collector Current I C (A) m 400 5.45±0.1 C I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) mA 0.65 +0.2 -0.1 Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 0m Collector Current I C (A) 70 6 500 2 3 B RL (Ω) A ø3.2±0.1 5.45±0.1 VCC (V) m 00 a 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 15 2.0±0.1 b VCE=4V, IC=5A I C – V CE Characteristics (Typical) 1.8 2.0 µA 180min 160min 4.8±0.2 V 100max VEB=5V IC=25mA 15.6±0.4 9.6 –30 Tstg µA ˚C 180 ICBO Unit 4.0 V Conditions 19.9±0.3 160 Symbol External Dimensions MT-100(TO3P) 4.0max VCEO Unit (Ta=25°C) Ratings 2SC3519 2SC3519A 100max 5.0±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3519 2SC3519A VCBO 160 180 Application : Audio and General Purpose 20.0min LAPT 50 Without Heatsink 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 67 2SC3678 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) µA V IEBO VEB=7V 100max µA V 7 V V(BR)CEO IC=10mA 800min IC 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.3A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF –5 I C – V CE Characteristics (Typical) 1max I B =50mA 1 2 3 4 V B E (sat) e Temp) 25˚C (Cas 125˚C (Case Temp) –55 ˚C V C E (sat) 0 0.02 0.05 0.1 1 5˚C 0 3 t on •t stg • t f – I C Characteristics (Typical) 8 t on • t st g• t f ( µs) 50 –55˚C 10 1 3 5 t s tg V C C 250V I C :I B 1 :–I B2 =2:0.3:1Const. 1 tf 0.5 t on 0.2 0.1 0.5 1 0.5 0.3 5 10 P c – T a Derating Maxim um Power Dissip ation P C (W) 1000 Collecto r Curr ent I C (A) nk 500 si 100 Collector-Emitter Voltage V C E (V) 40 at Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 60 he 1000 500 1000 ite 500 Collector-Emitter Voltage V C E (V) 0.1 50 100 80 1 0.5 50 Time t(ms) fin 100 1 In Without Heatsink Natural Cooling 1.2 ith Collector Curr ent I C (A) 3 s 0.5 1.0 W 0µ 1 68 1 5 5 0.8 3 10 10 0.6 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.4 Collector Current I C (A) Collector Current I C (A) 0.1 50 Transient Thermal Resistance 25˚C Switching T im e D C Cur r ent Gai n h F E 125˚C 0.5 0.2 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 Collector Current I C (A) h FE – I C Characteristics (Typical) 0.05 1 ( 12 0.5 2 mp) p) –55˚C (Case Tem e Te 1 Collector-Emitter Voltage V C E (V) 5 0.01 (V CE =4V) 3 Collector Current I C (A) 100mA 1 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) Collector-Emitter Saturation Voltage V C E (s at) (V) Base-Emitter Saturation Voltage V B E (s at) (V) Collector Current I C (A) 5max V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 200 mA 2 0 1max 400mA 300mA 0 –0.5 θ j - a (˚C /W ) 500mA 3 0.15 Weight : Approx 6.0g a. Part No. b. Lot No. p) 10 1.4 E ase Tem 1 tf (µs) C –55˚C (C 250 IB1 (A) tstg (µs) 0.65 +0.2 -0.1 5.45±0.1 B ton (µs) (Cas VBB2 (V) 5.45±0.1 IB2 (A) 125˚C VBB1 (V) 2 3 1.05 +0.2 -0.1 2 5 Cas eT ˚C e m p) 250 RL (Ω) IC (A) ø3.2±0.1 b V ■Typical Switching Characteristics (Common Emitter) VCC (V) 2.0±0.1 mp) Tstg a 4.8±0.2 ase Te VEBO 25˚C (C 800 20.0min VCEO 15.6±0.4 9.6 1.8 100max V 5.0±0.2 VCB=800V 900 2.0 ICBO VCBO 4.0 Unit Symbol 19.9±0.3 Ratings Unit External Dimensions MT-100(TO3P) (Ta=25°C) Conditions Ratings 4.0max ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol Application : Switching Regulator and General Purpose 20 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC3679 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 75typ pF 1.05 +0.2 -0.1 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 250 125 2 10 –5 0.3 –1 1max 5max 1max 1 0 0 1 2 3 4 C 125˚C ( V C E (sat) 0 0.03 0.05 0.1 0.5 Collector-Emitter Voltage V C E (V) as 1 5 0 10 t on •t stg • t f – I C Characteristics (Typical) 10 25˚C –55˚C 10 0.5 1 5 5 t s tg V C C 250V I C :I B1 :–I B 2 =2:0.3:1Const. 1 tf 0.5 t on 0.2 0.1 0.5 s 0µ s 5 0.1 100 1000 P c – T a Derating 500 Collector-Emitter Voltage V C E (V) 1000 Collector Curr ent I C (A) nk 100 si 0.01 50 50 at Collector-Emitter Voltage V C E (V) 1000 he 500 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than1% ite C) 0.1 fin 1 In 5 100 10 100 0.5 0.05 0.05 50 1 ith =2 Without Heatsink Natural Cooling 10 p) 0.5 Time t(ms) 5 s ( Tc 1 1.2 1 M aximum Power Dissipa ti on P C (W) 1m s DC Collector Curre nt I C ( A) m 1.0 W 0m 0.8 10 µs 10 0.5 0.01 5 1 10 10 5 0.6 2 20 20 10 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.2 Collector Current I C (A) Collector Current I C (A) 0.1 Transient Thermal Resistance t on• t s t g • t f (µ s) 125˚C Swi tchi ng T im e DC Cur rent Gain h F E 50 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 mp) 1 e Collector Current I C (A) h FE – I C Characteristics (Typical) 5 0.02 2 ase Tem –55˚C (Case Temp) 25˚C (Case Temp) e Temp) 125˚C (Cas e Te V B E (sat) 1 –55˚C (C I B =100mA (Cas 2 3 125˚C 200mA 4 Collector Current I C (A) 3 2 θ j - a ( ˚ C/W) Collector Current I C (A) 300mA (V CE =4V) 5 Te m p) 25˚ C –5 5 ˚C 400 mA 4 1.4 E I C – V BE Temperature Characteristics (Typical) (I C /I B =5) 500mA C Weight : Approx 6.0g a. Part No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at ) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 5 0.65 +0.2 -0.1 5.45±0.1 B RL (Ω) 600mA 2 3 5.45±0.1 VCC (V) 700mA ø3.2±0.1 V ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 2.0±0.1 b IB Tstg a 4.8±0.2 ) VEBO 1.8 V 15.6±0.4 9.6 5.0±0.2 µA 19.9±0.3 100max Temp 800 VCB=800V (Case VCEO ICBO 25˚C V Unit 2.0 900 Ratings 4.0 VCBO External Dimensions MT-100(TO3P) (Ta=25°C) Conditions Symbol 4.0max Unit IC ■Electrical Characteristics (Ta=25°C) Ratings Symbol 20.0min ■Absolute maximum ratings Application : Switching Regulator and General Purpose 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 69 2SC3680 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Ratings Unit ICBO VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 3.5 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.2max V Tj 150 °C fT VCE=12V, IE=–2A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 105typ V pF IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 250 83 3 10 –5 0.45 –1.5 1max 5max 1max 0 1 2 3 12 0.05 0.1 ˚C –5 0.5 1 10 10 0.05 0.1 0.5 1 5 7 t s tg 5 V C C 250V I C :I B1 :I B2 =2:0.3:–1Const. 1 tf 0.5 t on 0.2 0.1 0.5 s s 1 5 7 0.1 1 0.01 50 100 500 Collector-Emitter Voltage V C E (V) 1000 ) mp) p) ase Tem nk 1000 si 500 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% at 0.1 100 he Collector-Emitter Voltage V C E (V) Temp P c – T a Derating ite 100 1000 fin 50 100 In 10 10 120 0.5 0.05 0.05 5 1 ith Without Heatsink Natural Cooling 2 (Case 0.5 Time t(ms) 5 1 0.01 1.2 10 0.5 0.1 1.0 1 Ma ximum Po we r Dissipatio n P C ( W) s 0µ Co lle ctor Cu rre nt I C ( A) m 10 0.8 W Collecto r Cur rent I C (A) 5 1m 0.6 2 20 20 10 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.2 Collector Current I C (A) Collector Current I C (A) 70 Transient Thermal Resistance t on• t st g• t f (µs) Swi tchi ng T im e D C Cur r ent Gai n h F E C –55˚C 5 0.02 0 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 50 25˚C e Te 0 5 7 (V C E =4V) 5˚ (Cas 5˚C Collector Current I C (A) h FE – I C Characteristics (Typical) 25˚C 2 –55˚C (C 5 V C E (sat) Collector-Emitter Voltage V C E (V) 12 4 125˚C ) (C emp 125˚C 0 0.02 4 Collector Current I C (A) ) emp ase T θ j - a ( ˚ C/W) 0 p) ase Tem eT I B =100mA 2 –55˚C (C as 200mA 6 V B E (sat) 25˚C (C (V CE =4V) 7 ase Temp) (C 300 mA 4 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) 1 1.4 E ˚C Collector Current I C (A) 500mA 5.45±0.1 C 25 Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 6 0.65 +0.2 -0.1 Weight : Approx 6.0g a. Part No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 700m A 2 3 B RL (Ω) 1A ø3.2±0.1 5.45±0.1 VCC (V) 7 2.0±0.1 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) a 4.8±0.2 b IB Tstg 4.0 IC 19.9±0.3 VEBO 15.6±0.4 9.6 1.8 Conditions V 5.0±0.2 Unit 900 2.0 Ratings VCBO Symbol External Dimensions MT-100(TO3P) (Ta=25°C) 4.0max Symbol ■Electrical Characteristics 20.0min ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC3830 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose ■Absolute maximum ratings (Ta=25°C) External Dimensions MT-25(TO220) (Ta=25°C) 1max mA V IEBO VEB=10V 100max µA 10 V V(BR)CEO V 6(Pulse12) A hFE IC=25mA 500min VCE=4V, IC=2A 10 to 30 IB 2 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.5A 8typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 45typ pF IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 100 2 10 –5 0.2 –0.4 1max 4.5max 0.5max 1 0 1 2 3 12 0 0.02 4 5˚ Collector-Emitter Voltage V C E (V) 0.05 0.1 –5 0.5 1 5˚ –55˚C 10 1 5 6 1 0.5 t on tf 0.1 0.2 0.5 5 6 mp) ) e Te 0.5 0.3 1 10 100 1000 P c – T a Derating 50 nk Collector Curr ent I C (A) si 500 600 at 100 Collector-Emitter Voltage V C E (V) he 0.02 50 30 ite 500 600 fin 0.1 Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than 1% In 0.5 40 ith s ms C 1 0.05 Collector-Emitter Voltage V C E (V) 1.4 W 1m 10 D Without Heatsink Natural Cooling 0.05 100 1.2 Time t(ms) 5 0.5 50 1.0 10 s 1 10 0.8 1 M aximum Power Dissipa ti on P C (W) 0µ 0.6 4 20 10 5 Collect or Cur ren t I C (A) 1 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area 20 10 0.2 Collector Current I C (A) Safe Operating Area (Single Pulse) 0.02 7 t s tg V C C 200V I C :I B1 :I B 2 =10:1:–2 Collector Current I C (A) 0.1 Transient Thermal Resistance 7 5 t on• t s t g • t f (µ s) 25˚C Swi tchi ng T im e DC Cur rent Gain h F E 125˚C 0.5 0 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 50 0.1 ) 0 5 (V C E =4V) 0.05 mp 1 C Collector Current I C (A) h FE – I C Characteristics (Typical) 5 0.02 2 C V C E (sat) θ j - a (˚ C/W) 0 p) ase Tem 125˚C (C 3 (Cas I B =100mA p) –55˚C (Case Tem Temp) 25˚C (Case Te 2 1 4 se 200mA V B E (sat) (Ca 3 5 ˚C 300mA (V C E =4V) 6 2 125 400 mA 4 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) 60 0m A 1.4 (I C /I B =5) (C as 2 5 e Te m p) ˚C Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) Collector Current I C (A) 5 2.5 Weight : Approx 2.6g a. Part No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 80 0m A 1.35 B C E RL (Ω) 1A b 2.5 VCC (V) 6 ø3.75±0.2 a 0.65 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 2.0±0.1 –55˚C Tstg V 4.8±0.2 emp VEBO se T 500 (Ca VCEO 10.2±0.2 25˚C V 3.0±0.2 VCB=600V 600 16.0±0.7 ICBO VCBO 8.8±0.2 Unit Symbol 4.0max Ratings Unit IC ■Electrical Characteristics Conditions Ratings 12.0min Symbol 20 10 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 71 2SC3831 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) 1max mA VCEO 500 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 500min V 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=5A, IB=1A 1 . 3 max Tj 150 °C fT VCE=12V, IE=–1A 8typ –55 to +150 °C COB VCB=10V, f=1MHz 105typ V V MHz 1.05 +0.2 -0.1 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 40 5 10 –5 0.5 –1.0 1max 4.5max 0.5max 0 1 2 3 Collector Current I C (A) –5 0.05 0.1 0.5 1 5 10 1 5 10 5 t s tg V C C 200V I C :I B 1 :I B 2 =10:1:–2 1 0.5 t on tf 0.1 0.2 0.5 s 5 10 0.1 10 100 Collector-Emitter Voltage V C E (V) Maxim um Power Dissipatio n P C ( W) 500 600 Co lle ctor Cu rr ent I C (A) ) nk Without Heatsink Natural Cooling L=3mH I B 2 =–0.5A Duty:less than 1% 50 si 0.01 50 mp) P c – T a Derating at Collector-Emitter Voltage V C E (V) 500 600 1000 he 100 100 ite 50 1 fin 0.05 Temp 0.5 In 0.02 8 10 1 0.5 1 0.05 (Case 1 ith Without Heatsink Natural Cooling 1.2 W ms C 0.5 1.0 100 5 1 0.8 Time t(ms) 10 D Collecto r Curr ent I C (A) 0µ 10 5 10 0.6 2 30 30 72 1 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) s 0.2 Collector Current I C (A) Collector Current I C (A) 0.1 Transient Thermal Resistance t on • t st g• t f (µs) –5 5˚C Switching T im e D C Cur r ent Gai n h F E 25˚C 10 0 Base-Emittor Voltage V B E (V) 10 125˚C 1m p) 0 10 t on •t stg • t f – I C Characteristics (Typical) 50 0.5 Tem 2 C (V C E =4V) 0.1 se ˚C 5˚ Collector Current I C (A) h FE – I C Characteristics (Typical) 0.05 4 –55˚C C 5˚ V C E (sat) Collector-Emitter Voltage V C E (V) 5 0.02 6 (Ca ) mp Te 12 0 0.02 4 (Case θ j- a ( ˚C/W) 0 125˚C ) Temp 125 100mA 2 p) ase Tem 25˚C (C 8 se 200mA 4 e Temp) –55˚C (Cas (C a 400 mA 6 V B E (sat) 1 ˚C 60 0m A (V CE =4V) 10 25 Collector-Emitter Saturation Voltage V C E (s at ) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) A .2 =1 IB Collector Current I C (A) 8 1.4 E I C – V BE Temperature Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 800 mA C Weight : Approx 6.0g a. Part No. b. Lot No. (I C /I B =5) 1A 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) I C – V CE Characteristics (Typical) 2 3 pF ■Typical Switching Characteristics (Common Emitter) 10 ø3.2±0.1 b e Te Tstg a 2.0±0.1 (Cas IC 4.8±0.2 25˚C VEBO 15.6±0.4 9.6 1.8 Unit VCB=600V Symbol 5.0±0.2 Ratings ICBO 2.0 Conditions V 4.0 Unit 600 19.9±0.3 Ratings VCBO 20.0min Symbol External Dimensions MT-100(TO3P) (Ta=25°C) 4.0max ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC3832 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose ■Absolute maximum ratings (Ta=25°C) External Dimensions MT-25(TO220) (Ta=25°C) Unit ICBO VCB=500V 100max µA V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.5A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF V IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 66.7 3 10 –5 0.3 –0.6 1max 3max 0.5max 2 3 0.05 t o n • t s t g• t f ( µs) 25˚C –30 ˚C Sw it ching Time 0.5 1 10 1 5 7 5 1 0.5 t on tf 0.1 0.2 0.5 0µ 1 5 p) 0.3 1 mp) 100 1000 P c – T a Derating 500 nk 100 si 50 Collector-Emitter Voltage V C E (V) at 10 30 he Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% 40 ite Co lle ctor Cu rren t I C ( A) ) 10 fin 500 e Te 0.5 In 100 Collector-Emitter Voltage V C E (V) 0.1 5 (Cas 1 ith 0.1 1.2 W Without Heatsink Natural Cooling 1 0.5 1.0 50 5 1 0.8 Time t(ms) 10 s 0.6 4 Reverse Bias Safe Operating Area 5 50 0.4 θ j-a – t Characteristics 20 10 10 0.2 Collector Current I C (A) 20 5 0 Base-Emittor Voltage V B E (V) V C C 200V I C :I B1 :–I B 2 =10:1:2 Safe Operating Area (Single Pulse) 0.5 Tem 0 5 7 t s tg Collector Current I C (A) 10 se C Maxim um Power Dissipatio n P C ( W) D C Cur r ent Gai n h F E 125˚ C Collecto r Curr ent I C (A) 0.1 5˚ 10 50 0.5 –5 t on •t stg • t f – I C Characteristics (Typical) (V C E =4V) 0.1 2 Collector Current I C (A) h FE – I C Characteristics (Typical) 0.05 C 5˚ –55˚C 12 Collector-Emitter Voltage V C E (V) 5 0.02 ) Temp V C E (sat) 0 0.02 4 (Case 4 (Ca 125˚C θ j - a (˚ C/W) 1 0 e Temp) 25˚C (Cas Transient Thermal Resistance 0 e Temp) –55˚C (Cas ˚C 2 1 125 I B =100mA 6 V B E (sat) Collector Current I C (A) 200mA (V C E =4V) 7 as e 2 5 Tem p) ˚C 300mA 4 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) (C 80 400mA 1.4 Weight : Approx 2.6g a. Part No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 0m A Collector Current I C (A) 6 2.5 B C E RL (Ω) 60 0m A 3.0±0.2 2.5 VCC (V) I C – V CE Characteristics (Typical) 1.35 0.65 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 7 b emp Tstg ø3.75±0.2 a se T VEBO 2.0±0.1 (Ca 400 4.8±0.2 25˚C VCEO 10.2±0.2 16.0±0.7 V 8.8±0.2 500 4.0max VCBO 12.0min Symbol Ratings Unit IC ■Electrical Characteristics Conditions Ratings Symbol 20 10 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 73 2SC3833 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose ■Absolute maximum ratings (Ta=25°C) External Dimensions MT-100(TO3P) Unit 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO V 12(Pulse24) A hFE IC=25mA 400min VCE=4V, IC=7A 10 to 30 4 A VCE(sat) IC=7A, IB=1.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=7A, IB=1.4A 1.3max V Tj 150 °C fT VCE=12V, IE=–1A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF V 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 28.5 7 10 –5 0.7 –1.4 1.0max 3.0max 0.5max 2 0 1 2 3 12 5˚ 0.05 0.1 Collector-Emitter Voltage V C E (V) –5 0.5 1 5 5˚ 0 10 t on •t st g • t f – I C Characteristics (Typical) 8 t o n • t s t g• t f ( µs) 50 –30˚C 10 1 5 10 12 t s tg V C C 200V I C :I B1 :–I B2 =10:1:2 1 0.5 t on tf 0.1 0.5 1 10 ) Temp 1000 P c – T a Derating 100 0.01 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 nk 500 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% si 0.1 50 at Co lle ctor Cu rr ent I C ( A) 1 he Collector-Emitter Voltage V C E (V) 100 ite 100 mp) p) 10 fin Collecto r Curr ent I C (A) 1 In ) 0.01 74 0.1 Time t(ms) 0.5 0.05 50 0.5 ith C 0.05 10 1.2 W 25 Without Heatsink Natural Cooling 5 10 5 0.5 0.1 5 10 ms c= (T 1 1.0 s 1ms 10 DC 5 0.8 1 30 0µ 0.6 2 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.4 Collector Current I C (A) Collector Current I C (A) 30 0.2 θ j-a – t Characteristics M aximu m Power Dissipat io n P C (W) 0.5 5 Transient Thermal Resistance 25˚C Swit ching Time DC C urrent G ain h FE 125˚C 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 Tem 2 C Collector Current I C (A) h FE – I C Characteristics (Typical) 5 0.02 4 C V C E (sat) 0 0.02 4 (C (Case 125˚C 6 se ) emp ase T 8 e Te e Temp) 25˚C (Cas θ j - a (˚ C/W) 0 Temp) –55˚C I B =100mA –55˚C (Case (Ca 200mA 1 ˚C 6 10 V B E (sat) 125 400m A (V CE =4V) 12 Collector Current I C (A) 8 4 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) as e 2 5 Temp ) ˚C Collector Current I C (A) 60 0m A 1.4 E (C Collector-Emitter Saturation Voltage V C E (s at ) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 80 0m A 10 C Weight : Approx 6.0g a. Part No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) A 1000m 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) 12 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.2±0.1 b IB Tstg a 2.0±0.1 (Cas IC 4.8±0.2 25˚C VEBO 15.6±0.4 9.6 1.8 VCB=500V 2.0 ICBO 4.0 V 19.9±0.3 Unit 500 5.0±0.2 Ratings Conditions Ratings VCBO 4.0max Symbol (Ta=25°C) 20.0min Symbol ■Electrical Characteristics 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC3834 Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Conditions Ratings Unit V ICBO VCB=200V 100max µA VCEO 120 V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 110typ pF IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 50 16.7 3 10 –5 0.3 –0.6 0.5max 3.0max 0.5max 1 0 1 0 2 3 0 0.005 0.01 0.05 0.1 0.5 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 100 50 1 5 1 2 5 ˚C 25˚ 100 Transient Thermal Resistance DC C urrent G ain h FE Typ C –30 ˚C 50 20 0.01 7 0.05 0.1 0.5 f T – I E Characteristics (Typical) 5 7 1 20 10 0.3 1 10 0m Ma xim um Powe r Dissipation P C ( W) 120 Collector-Emitter Voltage V C E (V) 200 Temp ) mp) (Case nk 50 si 10 at 5 he 0.05 30 ite Without Heatsink Natural Cooling fin 0.5 In 1 40 ith Collector Curr ent I C (A) s 0.1 –5 1000 W 10 100 P c – T a Derating ms 20 Emitter Current I E (A) 0.5 50 10 5 –1 1 Time t(ms) 10 –0.5 θ j-a – t Characteristics Safe Operating Area (Single Pulse) (V C E =12V) 30 1.0 1.1 4 Collector Current I C (A) Collector Current I C (A) Cut- off F req uency f T (M H Z ) DC C urrent G ain h FE 300 –0.05 –0.1 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0 –0.01 0 1 Base Current I B (A) h FE – I C Characteristics (Typical) 0.5 p) 1 4 200 0.1 Tem 2 Collector-Emitter Voltage V C E (V) 20 0.02 3 –30˚C I B =10mA A 2 1 4 se 20 mA 5A 3 3A 40m (Ca A 4 5 ˚C 60mA 6 2 125 5 (V CE =4V) 7 I C= 1 Collector Current I C (A) mA 2.6 Collector Current I C (A) 6 100 I C – V BE Temperature Characteristics (Typical) θ j- a (˚ C/W) 1 A 50m 1.4 Weight : Approx 2.6g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) A 2.5 B C E RL (Ω) m 200 1.35 2.5 VCC (V) 7 b 0.65 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.75±0.2 a e Te Tstg V 2.0±0.1 (Cas IC 4.8±0.2 25˚C VEBO 10.2±0.2 3.0±0.2 Unit 200 16.0±0.7 Ratings VCBO Symbol External Dimensions MT-25(TO220) (Ta=25°C) 8.8±0.2 Symbol 4.0max ■Electrical Characteristics 12.0min ■Absolute maximum ratings (Ta=25°C) Application : Humidifier, DC-DC Converter, and General Purpose 20 10 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 75 2SC3835 Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 110typ pF V 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 50 16.7 3 10 –5 0.3 –0.6 0.5max 3.0max 0.5max I B =10mA 1 0 1 0 2 3 A 2 0 0.005 0.01 0.05 0.1 0.5 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 100 50 1 5 1 2 5 ˚C 25˚ 100 Transient Thermal Resistance DC C urrent G ain h FE Typ C –30 ˚C 50 20 0.01 7 0.05 0.1 0.5 f T – I E Characteristics (Typical) 5 7 1 20 1 0.5 0.4 10 0µ 40 he at si nk M aximu m Power Dissip ation P C (W) ite Co lle ctor Cu rre nt I C (A) fin 76 –5 In Without Heatsink Natural Cooling 50 ith 0.5 60 W 1 30 20 10 Without Heatsink 0.05 –1 1000 2000 s 0.1 –0.5 100 P c – T a Derating ms 10 Emitter Current I E (A) 10 70 10 20 –0.05 –0.1 1 Time t(ms) 10 5 ) θ j-a – t Characteristics Safe Operating Area (Single Pulse) (V C E =12V) 30 1.0 1.1 5 Collector Current I C (A) Collector Current I C (A) Cut-o ff Fr equ ency f T (MH Z ) DC C urrent G ain h FE 300 0 –0.01 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 0 1 Base Current I B (A) 200 mp) 1 4 h FE – I C Characteristics (Typical) 0.1 p) 2 Collector-Emitter Voltage V C E (V) 20 0.02 3 Temp 1 4 Tem 20 mA 5A 3 3A 40m se A 4 5 (Ca 60mA ˚C 5 6 2 125 mA (V C E =4V) 7 I C= 1 Collector Current I C (A) 100 2.6 Collector Current I C (A) 6 1.4 E I C – V BE Temperature Characteristics (Typical) θ j - a (˚ C/W) 1 A 50m C Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) 2 A 00m 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) 7 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.2±0.1 b IB Tstg a 2.0±0.1 (Case IC 4.8±0.2 –30˚C VEBO 15.6±0.4 9.6 1.8 100max 5.0±0.2 VCB=200V e Te 120 ICBO (Cas VCEO Unit 25˚C V Ratings 2.0 200 External Dimensions MT-100(TO3P) (Ta=25°C) Conditions Symbol 4.0 VCBO ■Electrical Characteristics 19.9±0.3 Unit 4.0max Ratings Symbol 20.0min ■Absolute maximum ratings (Ta=25°C) Application : Humidifier, DC-DC Converter, and General Purpose 5 10 50 120 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC3851/3851A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1488/A) A V(BR)CEO IB 1 A hFE VCE=4V, IC=1A 60min 80min 40 to320 PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=0.2A 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 60typ pF Tstg V ø3.3±0.2 a b 3.9 IC=25mA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 12 6 2 10 –5 200 –200 0.2typ 1typ 0.3typ 10mA 1 5mA 0 1 0 2 3 4 5 0.5 3A 0 0.005 0.01 0.05 0.1 0.5 (V C E =4V) 100 50 1 Transient Thermal Resistance DC Curr ent Gain h FE Typ 125˚C 25˚ C 100 – 3 0 ˚C 50 20 0.01 4 0.05 Collector Current I C (A) 0.1 f T – I E Characteristics (Typical) 0.5 1 4 p) 10 100 0m m s s ite he at si nk –4 fin Without Heatsink Natural Cooling In 0.5 20 ith DC 1 W –0.5 –1 1000 s Ma xim um Powe r Dissipat io n P C (W) 10 10 10 Without Heatsink 0.05 0 –0.1 1 P c – T a Derating 0.1 Emitter Current I E (A) 1 30 5 –0.005 5 0.5 10 30 10 1.2 Time t(ms) 1m Typ 1.0 θ j-a – t Characteristics Safe Operating Area (Single Pulse) (V C E =12V) 20 0.5 Collector Current I C (A) Collector Cur rent I C (A) DC Curr ent Gain h FE 500 40 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 500 Cu t-off Fr eque ncy f T ( MH Z ) 0 1 Base Current I B (A) (V C E =4V) 0.5 Tem 1 I C =1 A 6 h FE – I C Characteristics (Typical) 0.1 2 2A Collector-Emitter Voltage V C E (V) 20 0.01 3 se 20mA 1.0 (Ca 30mA ˚C Collector Current I C (A) 40mA 3 Collector Current I C (A) IB =7 50mA (V CE =4V) 4 θ j - a (˚C/W) 0m A 60 m A 2 I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) 4 Weight : Approx 2.0g a. Part No. b. Lot No. B C E 125 I C – V CE Characteristics (Typical) 2.4±0.2 2.2±0.2 mp) 4 e Te IC V µA 100max VEB=6V (Cas IEBO –30˚C V ) 6 emp VEBO 100 0.8±0.2 80 VCB= 4.0±0.2 µA 100max ICBO se T V (Ca V 80 4.2±0.2 2.8 c0.5 25˚C 100 60 10.1±0.2 8.4±0.2 80 VCEO Unit 16.9±0.3 VCBO Conditions Symbol 13.0min Unit External Dimensions FM20(TO220F) (Ta=25°C) Ratings 2SC3851 2SC3851A ±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3851 2SC3851A Application : Audio and PPC High Voltage Power Supply, and General Purpose 3 5 10 50 Collector-Emitter Voltage V C E (V) 80 0 0 50 100 150 Ambient Temperature Ta(˚C) 77 2SC3852/3852A High hFE LOW VCE (sat) Silicon NPN Epitaxial Planar Transistor IC 3 A V(BR)CEO VEB=6V V µA 100max IC=25mA 60min 80min V 1 A hFE VCE=4V, IC=0.5A 500min PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=50mA 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF Tstg 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 20 20 1.0 10 –5 15 –30 0.8typ 3.0typ 1.2typ 1mA 0.5mA 0 0 1 2 3 4 5 0.5 0 0.001 0.005 0.01 0.05 0.1 0.5 125˚C Transient Thermal Resistance D C Cur r ent Gai n h F E 1000 Typ 500 1 3 25 ˚C 500 – 3 0 ˚C 100 0.01 0.1 Collector Current I C (A) 1 3 100 m s s si nk –2 at –1 10 Without Heatsink 0.05 –0.5 he 0.1 ite Without Heatsink Natural Cooling fin 0.5 20 In DC 1 ith Collecto r Curr ent I C (A) 10 0m W 10 1000 P c – T a Derating s Typ 78 10 1m 20 –0.05 –0.1 1 30 10 Emitter Current I E (A) V CB =10V I E =–2A Time t(ms) 10 5 0 –0.005 –0.01 1 Safe Operating Area (Single Pulse) (V C E =12V) 30 0.5 5 Collector Current I C (A) f T – I E Characteristics (Typical) 1.0 1.1 0.5 θ j-a – t Characteristics 0.5 Maxim um Power Dissipatio n P C ( W) D C Cur r ent Gai n h F E (V C E =4V) 2000 0.5 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 2000 Cu t-of f Fr eque ncy f T (MH Z ) 0 1 Base Current I B (A) (V C E =4V) 0.1 p) 2A I C =1A 6 h FE – I C Characteristics (Typical) 100 0.01 1 3A Collector-Emitter Voltage V C E (V) 1000 2 em 2mA 1 1.0 eT 3mA Cas 5mA 2 125 8mA (V CE =4V) 3 Collector Current I C (A) A 1.0 θ j - a ( ˚C/W) =1 I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) Collector Current I C (A) IB 2m Weight : Approx 2.0g a. Part No. b. Lot No. B C E ˚C ( I C – V CE Characteristics (Typical) 2.4±0.2 2.2±0.2 VCC (V) 3 4.0±0.2 3.9 IB ø3.3±0.2 a b ) IEBO Temp V (Case 6 µA 100 –30˚C VEBO 80 0.8±0.2 VCB= ±0.2 ICBO mp) V e Te V 80 4.2±0.2 2.8 c0.5 (Cas 100 60 10.1±0.2 25˚C 80 VCEO Unit 16.9±0.3 VCBO Conditions 13.0min Symbol Unit External Dimensions FM20(TO220F) (Ta=25°C) Ratings 2SC3852 2SC3852A 10max 8.4±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3852 2SC3852A Application : Driver for Solenoid and Motor, Series Regulator and General Purpose 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 0 0 50 100 Ambient Temperature Ta(˚C) 150 2SC3856 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) Conditions Ratings Unit V ICBO VCB=200V 100max µA VCEO 180 V IEBO VEB=6V 100max µA IC=50mA 180min V VCE=4V, IC=3A 50min∗ A VCE(sat) IC=5A, IB=0.5A 2.0max V 130(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 300typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 20.0min 4 PC 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 40 4 10 10 –5 1 –1 0.5typ 1.8typ 0.6typ I B =20mA 0 1 0 2 3 I C =10A 0 4 0 0.5 1.0 1.5 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 300 200 1 1 5 100 25˚C 50 –30˚C 20 0.02 10 15 Collector Current I C (A) 0.1 0.5 1 5 10 15 3 1 0.5 0.1 1 10 Safe Operating Area (Single Pulse) (V C E =12V) 10 10 Typ 5 at si nk Without Heatsink Natural Cooling he 0.5 ite 1 100 fin Collecto r Cur ren t I C (A) C In 10 D s s ith 20 0m 130 s W 10 3m m 1000 2000 P c – T a Derating 40 30 100 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics Maxim um Power Dissi pation P C (W) 0.5 Transient Thermal Resistance DC C urrent G ain h FE Typ 50 Cut -off Fre quen cy f T ( MH Z ) D C Cur r ent Gai n h F E 125˚C 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 20 0.02 0 2.0 Base Current I B (A) h FE – I C Characteristics (Typical) mp) 5A Collector-Emitter Voltage V C E (V) 100 5 Temp) 1 e Te 50mA 5 10 mp) 100 mA 2 e Te 20 0m A 10 Cas A ˚C ( 300m (V C E =4V) 15 3 125 mA Collector Current I C (A) 0 50 1.4 E I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) A C Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 1A Collector Current I C (A) 7 m 00 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) 15 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.2±0.1 b IB Tstg a (Cas hFE 2.0±0.1 (Case V(BR)CEO A 4.8±0.2 –30˚C V 15 25˚C 6 IC 19.9±0.3 VEBO 15.6±0.4 9.6 1.8 Unit 200 2.0 Ratings VCBO 5.0±0.2 Symbol External Dimensions MT-100(TO3P) (Ta=25°C) 4.0 Symbol ■Electrical Characteristics 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 50 Without Heatsink 0 –0.02 –0.1 –1 Emitter Current I E (A) –10 0.1 3 10 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 79 2SC3857 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1493) ■Electrical Characteristics Ratings Unit ICBO VCB=200V 100max µA V IEBO VEB=6V 100max µA IC=50mA 200min V 200 24.4±0.2 6 V V(BR)CEO IC 15 A hFE VCE=4V, IC=5A 50min∗ IB 5 A VCE(sat) IC=10A, IB=1A 3.0max V VCE=12V, IE=–0.5A 20typ MHz VCB=10V, f=1MHz 250typ pF 150(Tc=25°C) W Tj 150 °C COB –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Tstg 21.4±0.3 20.0min PC a b 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 60 12 5 10 –5 0.5 –0.5 0.3typ 2.4typ 0.4typ 5 0 I B =50mA 1 0 2 3 1 0 1 2 3 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 50 5 Transient Thermal Resistance DC C urrent G ain h FE 100 125˚C 25˚C 100 –30˚C 50 20 0.02 10 15 Collector Current I C (A) 0.1 0.5 5 10 15 0.5 0.1 1 10 100 Collector-Emitter Voltage V C E (V) 300 nk 10 si 2 80 at 0.1 –10 he Without Heatsink Natural Cooling ite 0.5 fin 1 120 In 5 ith Co lle ctor Cu rre nt I C ( A) 10ms s W 10 m s s 20 10 C 3m 0m Typ 1000 P c – T a Derating 10 30 100 Time t(ms) Maxim um Power Dissi pation P C (W) D Emitter Current I E (A) 1 160 20 80 1 2 50 40 2 θ j-a – t Characteristics Safe Operating Area (Single Pulse) (V C E =12V) –1 1 Collector Current I C (A) f T – I E Characteristics (Typical) Cu t-off Fre quen cy f T ( MH Z ) DC C urrent G ain h FE Typ –0.1 0 Base-Emittor Voltage V B E (V) 300 0 –0.02 0 4 Base Current I B (A) 300 1 p) 5A 0 (V C E =4V) 0.5 Tem I C =15A 4 h FE – I C Characteristics (Typical) 0.1 5 10A Collector-Emitter Voltage V C E (V) 20 0.02 10 se 10 0m A 2 (Ca 20 0m A 10 (V CE =4V) 15 3 ˚C A 125 400m Collector Current I C (A) mA 3.0 +0.3 -0.1 E I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) 0 60 C Weight : Approx 18.4g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 5A 1. Collector Current I C (A) 1A 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) 15 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 9 7 VEBO fT 2.1 2-ø3.2±0.1 ) VCEO 6.0±0.2 36.4±0.3 Temp V (Case 200 –30˚C Unit VCBO Symbol External Dimensions MT-200 (Ta=25°C) Conditions Ratings 25˚C Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 40 5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2000 2SC3858 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1494) Symbol Conditions Ratings Unit VCB=200V 100max µA VEB=6V 100max µA IC=50mA 200min V Ratings Unit VCBO 200 V ICBO VCEO 200 V IEBO VEBO 6 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8A 50min∗ IB 5 A VCE(sat) IC=10A, IB=1A 2.5max V PC 200(Tc=25°C) W fT VCE=12V, IE=–1A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 300typ pF –55 to +150 °C ∗hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180) 24.4±0.2 7 21.4±0.3 20.0min a b VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 40 4 10 10 –5 1 –1 0.5typ 1.8typ 0.6typ I B =20mA 0 0 1 2 3 0 0 1 2 (V C E =4V) 200 5 100 25˚C –30˚C 50 10 0.02 10 17 Collector Current I C (A) 0.1 0.5 1 5 10 17 m Typ 10 2000 Collector-Emitter Voltage V C E (V) 300 nk 100 si 10 at 2 he Without Heatsink Natural Cooling 120 ite 0.5 fin 1 In 5 160 ith Co lle ctor Cu rre nt I C ( A) C 3 10 ms m s 0.1 –10 1000 W 10 s s 10 100 P c – T a Derating 0m 20 ) p) 1 Time t(ms) 10 D Emitter Current I E (A) 0.1 200 20 –1 0.5 50 30 –0.1 1 Safe Operating Area (Single Pulse) (V C E =12V) 2 2 Collector Current I C (A) f T – I E Characteristics (Typical) 0 –0.02 1 θ j-a – t Characteristics Maxim um Power Dissi pation P C (W) 1 Transient Thermal Resistance DC C urrent G ain h FE Typ 50 Cu t-off Fre quen cy f T ( MH Z ) DC C urrent G ain h FE 125˚C 0.5 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 300 0.1 0 3 Base Current I B (A) (V C E =4V) 20 0.02 Tem I C =15A 10A 4 h FE – I C Characteristics (Typical) 100 5 5A Collector-Emitter Voltage V C E (V) Temp 1 (Case 50mA 5 10 se 100mA 2 (Ca 20 0m A 10 15 ˚C A 125 Collector Current I C (A) 300m (V C E =4V) 17 3 Collector Current I C (A) mA 3.0 +0.3 -0.1 E I C – V BE Temperature Characteristics (Typical) θ j - a ( ˚ C/W) 500 C Weight : Approx 18.4g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 5A 1. 15 mA 0.65 +0.2 -0.1 5.45±0.1 B IC (A) 0 70 2 3 5.45±0.1 RL (Ω) 1A 9 1.05 +0.2 -0.1 VCC (V) 17 2.1 2-ø3.2±0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 6.0±0.2 36.4±0.3 –30˚C Tstg External Dimensions MT-200 (Ta=25°C) 25˚C Symbol ■Electrical Characteristics 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 80 40 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 81 2SC3890 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=3A 10 to 30 IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.5A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF 3.9 V RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 66 3 10 –5 0.3 –0.6 1max 3max 0.5max 2 3 12 0.05 0.1 Collector-Emitter Voltage V C E (V) t o n• t s t g • t f (µ s) Typ Swi tchi ng T im e 10 1 1 5 7 0.5 0.2 t on 0.1 0.2 0.5 1 0.4 5 7 5 1 0.3 1 10 10 P c – T a Derating fin ite he at si nk Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% 20 In Collector Curr ent I C (A) 1000 ith 1 0.5 100 W 5 Without Heatsink Natural Cooling 1.2 30 s 1 1.0 Time t(ms) Reverse Bias Safe Operating Area 5 0.8 0.5 Collector Current I C (A) 0µ 0.6 θ j-a – t Characteristics 20 0.5 0 Base-Emittor Voltage V B E (V) tf 20 10 p) 0 5 7 1 Safe Operating Area (Single Pulse) 10 Tem C t s tg V C C 200V I C :I B1 :I B 2 =10:1:–2 Collector Current I C (A) Co lle ctor Cu rre nt I C (A) 0.5 5˚ M aximu m Power Dissi pation P C (W) DC Cur rent Gain h FE 50 0.5 –5 7 5 70 0.1 2 t on •t stg • t f – I C Characteristics (Typical) (V C E =4V) 0.05 C 5˚ Collector Current I C (A) h FE – I C Characteristics (Typical) 7 0.02 T V C E (sat) 0 0.02 4 (Case 4 se 125˚C emp) (Ca 25 θ j - a (˚ C/W) 2 Temp) ˚C (Case Transient Thermal Resistance 1 0 e Temp) –55˚C (Cas ˚C 100mA 1 125 200 mA 6 V B E (sat) Collector Current I C (A) 4 (V C E =4V) 7 as e 2 5 Tem p) ˚C 40 0m A 300 mA 0 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) (C Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) I B= 6 Collector Current I C (A) A Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 800 mA 600m 2.4±0.2 2.2±0.2 VCC (V) 7 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 1.35±0.15 mp) Tstg ø3.3±0.2 a b e Te A (Cas 7(Pulse14) IC ) V –55˚C V 10 emp 400 VEBO 4.2±0.2 2.8 c0.5 se T VCEO 10.1±0.2 (Ca ICBO 25˚C V 4.0±0.2 VCB=500V 500 0.8±0.2 Unit 16.9±0.3 Ratings VCBO External Dimensions FM20(TO220F) (Ta=25°C) Conditions Unit ±0.2 Symbol Ratings 13.0min Symbol 8.4±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 10 Without Heatsink 2 0.1 5 10 50 100 Collector-Emitter Voltage V C E (V) 82 500 0.1 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC3927 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 10(Pulse15) A hFE VCE=4V, IC=5A 10 to 28 5 A VCE(sat) IC=5A, IB=1A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=5A, IB=1A 1.2max V Tj 150 °C fT VCE=12V, IE=–1A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 105typ V pF IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 250 50 5 10 –5 0.75 –1.5 1max 5max 0.5max 0 1 2 3 Collector Current I C (A) – 0.5 1 5 t o n • t s t g• t f ( µs) 10 1 5 10 t s tg 5 V C C 250V I C :I B1 :–I B 2 =10:1.5:3 1 0.5 t on tf 0.1 0.2 0.5 10 s 1 5 10 ) –55˚C (Case Temp) Temp 0.5 0.1 1 10 100 1000 Time t(ms) P c – T a Derating 120 5 500 Collector-Emitter Voltage V C E (V) 1000 nk 100 si 0.02 50 at Collector-Emitter Voltage V C E (V) 500 600 he 100 ite 0.05 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% fin 0.05 0.1 In Without Heatsink Natural Cooling 1 0.5 100 ith 1 50 1.2 10 0µ 0.5 0.02 10 1.0 1 M aximu m Power Dissipa tion P C (W) s Co lle ctor Cu rr ent I C ( A) 1m 0.8 W Co lle ctor Cu rr ent I C (A) ms 0.6 θ j-a – t Characteristics 20 10 0.4 2 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 20 DC 0.2 Collector Current I C (A) Collector Current I C (A) 0.1 Transient Thermal Resistance –5 5˚ C Swit ching Time DC C urrent G ain h FE 25 ˚C 5 0 Base-Emittor Voltage V B E (V) 10 125˚ C 10 p) 0 10 t on •t stg • t f – I C Characteristics (Typical) 50 0.5 em C (V C E =4V) 0.1 eT ˚C ( 2 ˚ 55 Collector Current I C (A) h FE – I C Characteristics (Typical) 0.05 4 (Case ) mp C 5˚ V C E (sat) 0.05 0.1 Collector-Emitter Voltage V C E (V) 5 0.02 6 Cas ) Temp 12 0 0.02 4 (Case θ j- a (˚ C/W) 0 125˚C 8 125 I B =100mA 2 p) ase Tem 25˚C (C Te 200mA 4 e Temp) –55˚C (Cas se 400m A 6 (V CE =4V) V B E (sat) 1 (C a Collector Current I C (A) 60 0m A 1.4 E 10 ˚C 80 0m A 8 5.45±0.1 C I C – V BE Temperature Characteristics (Typical) (I C /I B =5) 25 1A 0.65 +0.2 -0.1 Weight : Approx 6.0g a. Part No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 2A 2 3 B RL (Ω) 1. ø3.2±0.1 5.45±0.1 VCC (V) 10 2.0±0.1 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 4.8±0.2 b IB Tstg a 25˚C IC 15.6±0.4 9.6 1.8 Unit 900 5.0±0.2 Unit Ratings 2.0 Ratings VCBO VEBO External Dimensions MT-100(TO3P) (Ta=25°C) Conditions 19.9±0.3 Symbol 4.0 ■Electrical Characteristics 4.0max Symbol 20.0min ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 50 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 83 2SC4020 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) µA V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse 6) A hFE VCE=4V, IC=0.7A 10 to 30 VEBO IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.3A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 40typ Tstg 10.2±0.2 0.65 +0.2 -0.1 VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 250 357 0.7 10 –5 0.1 –0.35 1max 5max 1max 60mA I B =20mA 0 0 1 2 3 V B E (sat) 0.1 Collector-Emitter Voltage V C E (V) 0.5 1 0 5 t on •t stg • t f – I C Characteristics (Typical) 6 5 t o n• t s t g• t f (µ s) 50 25˚C –30˚C Sw it ching Time 10 5 0.5 1 3 t s tg VCC 250V IC:IB1:–IB2=2:0.3:1 Const. 1 tf 0.5 t on 0.2 0.1 0.5 P c – T a Derating 500 Collector-Emitter Voltage V C E (V) 1000 Collecto r Cur rent I C (A) nk 100 30 si 0.1 50 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 40 at Collector-Emitter Voltage V C E (V) 1000 1000 2000 50 1 0.5 100 he 500 10 ite Without Heatsink Natural Cooling 100 1 fin Collecto r Cur rent I C (A) 0.3 In 0.5 1.2 ith 1 1.0 W s 0.8 Time t(ms) 5 0µ 0.6 0.5 10 5 84 3 1 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.1 50 1 5 Collector Current I C (A) Collector Current I C (A) 10 0.4 θ j-a – t Characteristics Ma xim um Powe r Dissipat io n P C (W) DC C urrent G ain h FE 125˚C 0.1 0.2 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 0 Collector Current I C (A) h FE – I C Characteristics (Typical) 2 0.02 mp) V C E (sat) 0 0.03 0.05 4 1 θ j- a ( ˚C/W) 1 1 e Te 100mA 2 (Cas 140mA (V C E =4V) 3 125˚C 200 mA 2 Transient Thermal Resistance Collector Current I C (A) 300m A 2 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) Collector Current I C (A) 40 0m A 1.4 Weight : Approx 2.6g a. Part No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 0 2.5 B C E IC (A) 50 1.35 2.5 RL (Ω) 3 b pF VCC (V) mA 2.0±0.1 ø3.75±0.2 a V ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 4.8±0.2 3.0±0.2 100max 16.0±0.7 VCB=800V mp) ase Tem p) 800 ICBO –30˚C (C VCEO Unit ase Te V Ratings 25˚C (C 900 External Dimensions MT-25(TO220) (Ta=25°C) Conditions 8.8±0.2 VCBO Symbol 4.0max Unit IC ■Electrical Characteristics (Ta=25°C) Ratings Symbol 12.0min ■Absolute maximum ratings Application : Switching Regulator and General Purpose 20 10 2 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC4024 High hFE LOW VCE (sat) Silicon NPN Epitaxial Planar Transistor IEBO VEB=15V 10max µA V(BR)CEO IC=25mA 50min V VCE=4V, IC=1A 300 to 1600 3 A VCE(sat) IC=5A, IB=0.1A 0.5max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 24typ MHz Tj 150 °C COB VCB=10V, f=1MHz 150typ pF –55 to +150 °C 1.35±0.15 1.35±0.15 2.54 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 20 4 5 0.1 –0.1 0.5typ 2.0typ 0.5typ 5mA 2 0 0 2 4 10A 0.01 0.1 1 (V C E =4V) 1 5 10 1 2 5 ˚C 500 Transient Thermal Resistance DC C urrent G ain h FE Typ 25˚C –30 100 0.02 ˚C 0.1 Collector Current I C (A) 0.5 1 5 10 ) mp 1 0.5 0.3 1 10 P c – T a Derating 10 10 5 0m m s s 50 Collector-Emitter Voltage V C E (V) 100 10 nk 10 150x150x2 si 5 at 3 he 0.2 –10 ite 0.5 20 fin Without Heatsink Natural Cooling In 1 ith DC 30 W Co lle ctor Cu rre nt I C ( A) 10 Natural Cooling Silicone Grease Heatsink: Aluminum in mm s Maxim um Power Dissi pation P C (W) Typ –5 1000 40 1m 10 100 Time t(ms) 30 20 1.2 4 Safe Operating Area (Single Pulse) 30 1.0 θ j-a – t Characteristics (V C E =12V) Emitter Current I E (A) 0.5 Collector Current I C (A) f T – I E Characteristics (Typical) –1 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 500 Cut- off Fr equ ency f T (MH Z ) DC C urrent G ain h FE 0 2 Base Current I B (A) 1000 –0.5 Te I C= 1 A 6 1000 0 –0.05 –0.1 se 2 5A (V C E =4V) 0.5 4 3A 0 0.002 h FE – I C Characteristics (Typical) 0.1 6 (Ca 0.5 Collector-Emitter Voltage V C E (V) 100 0.02 8 ˚C 10mA 4 1.0 θ j- a ( ˚ C/W) Collector Current I C (A) 20m A 15mA (V CE =4V) 10 1.5 125 30mA 25mA 6 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s a t) (V ) I B =35m A 8 Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) 10 2.4±0.2 2.2±0.2 VCC (V) I C – V CE Characteristics (Typical) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 mp) Tstg 13.0min IB ø3.3±0.2 a b e Te hFE ) A (Cas 10 emp IC –30˚C V se T V 15 4.2±0.2 2.8 c0.5 (Ca 50 VEBO 25˚C VCEO 10.1±0.2 4.0±0.2 µA ICBO 0.8±0.2 Unit 10max V ±0.2 Ratings VCB=100V Unit 100 3.9 Conditions Symbol Ratings VCBO External Dimensions FM20(TO220F) (Ta=25°C) 8.4±0.2 Symbol ■Electrical Characteristics 16.9±0.3 ■Absolute maximum ratings (Ta=25°C) Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose 100x100x2 50x50x2 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 85 2SC4064 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1567) V(BR)CEO IC 12 A hFE µA VEB=6V 10max µA IC=25mA 50min V VCE=1V, IC=6A 50min IB 3 A VCE(sat) IC=6A, IB=0.3A 0.35max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 40typ MHz 150 °C COB VCB=12V, f=1MHz 180typ pF –55 to +150 °C Tj Tstg 10.1±0.2 1.35±0.15 1.35±0.15 40mA 6 20mA 4 10mA I B =5mA 0.8 1.6 2.4 3.2 4 4.8 10 1.0 0.5 9A 0 0.002 0.01 2 0.1 1 (V C E =1V) 1000 125˚C D C Cur r ent Gai n h F E 500 Typ 100 50 1 500 25˚C –3 0˚C 100 50 20 0.02 10 12 0.1 Collector Current I C (A) 1 10 12 5 1 0.5 0.3 1 10 40 s 20 ite he 86 –10 –12 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 nk Emitter Current I E (A) –5 si 0.05 –1 at 150x150x2 10 100x100x2 50x50x2 0.1 –0.5 fin Without Heatsink Natural Cooling In 0.5 30 ith 1 Natural Cooling Silicone Grease Heatsink: Aluminum in mm W Collector Curr ent I C (A) 0m s 10 DC m 20 10 5 s 10 10 Maxim um Power Dissipatio n P C ( W) 1m Typ 1000 P c – T a Derating 30 30 100 Time t(ms) Safe Operating Area (Single Pulse) (V C E =12V) 1.0 1.1 θ j-a – t Characteristics Collector Current I C (A) f T – I E Characteristics (Typical) 0 –0.05 –0.1 0.5 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 1000 D C Cur r ent Gai n h F E 0 3 Base Current I B (A) (V C E =1V) Cut- off F re quen cy f T (MH Z ) 4 6A 3A I C= 1 A 5.6 6 h FE – I C Characteristics (Typical) 0.1 6 12A Collector-Emitter Voltage V C E (V) 20 0.02 8 p) 8 (V CE =1V) 12 Tem Collector Current I C (A) 60mA 0 I C – V BE Temperature Characteristics (Typical) 1.3 ˚C Collector-Emitter Saturation Voltage V C E (s at) (V ) 20 m A 100m A 10 0 0.4typ V CE ( sat ) – I B Characteristics (Typical) 12 2 1.4typ B C E se I C – V CE Characteristics (Typical) 0.6typ –0.12 0.12 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) (Ca –5 10 tstg (µs) 125 6 ton (µs) IB2 (A) IB1 (A) Collector Current I C (A) 4 VBB2 (V) VBB1 (V) 2.4±0.2 2.2±0.2 θ j - a ( ˚C/W) 24 IC (A) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 Transient Thermal Resistance RL (Ω) ø3.3±0.2 a b ■Typical Switching Characteristics (Common Emitter) VCC (V) 4.2±0.2 2.8 c0.5 e Te mp) (Case Temp ) IEBO V Unit 100max –30˚C V 6 Ratings VCB=50V 4.0±0.2 50 VEBO Conditions 0.8±0.2 VCEO Symbol ±0.2 ICBO (Cas V 3.9 50 25˚C Unit VCBO External Dimensions FM20(TO220F) (Ta=25°C) 16.9±0.3 Ratings 8.4±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol Application : DC Motor Driver and General Purpose 13.0min LOW VCE (sat) 2 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC4065 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1568) ±12 A IC VEB=6V 60max mA IC=25mA 60min V hFE VCE=1V, IC=6A 50min IC=6A, IB=1.3A 0.35max VECO=10A 2.5max V IB 3 A VCE(sat) PC 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=12V, IE=–0.5A 24typ MHz °C COB VCB=10V, f=1MHz 180typ PF Tstg –55 to +150 V 1.35±0.15 1.35±0.15 Collector Current I C (A) 60mA 8 40mA 6 20mA I B =10mA 2 0 2 4 10 1.0 0.5 6A 0 0.005 0.01 2 0.1 1 0 3 (V C E =1V) 400 50 10 100 5 ˚C 25 ˚C –3 50 Transient Thermal Resistance DC Cur rent Gain h F E 100 5 12 0˚ C 10 5 1 3 0.02 10 12 0.1 Collector Current I C (A) 1 10 12 θ j-a – t Characteristics 5 1 0.5 0.2 1 10 Safe Operating Area (Single Pulse) (V C E =12V) 40 s fin ite si Emitter Current I E (A) –5 –10 –12 nk 100x100x2 50x50x2 Without Heatsink 0.05 –1 at 150x150x2 10 0.1 –0.5 he Without Heatsink Natural Cooling 20 In 0.5 30 ith 1 Natural Cooling Silicone Grease Heatsink: Aluminum in mm W Collector Curre nt I C (A) 0m s 10 DC m 20 10 5 10 10 s Maxim um Power Dissip ation P C (W) 1m Typ 1000 P c – T a Derating 30 30 100 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 1.0 1.1 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) Typ 0 –0.05 –0.1 0.5 0 Base Current I B (A) 400 DC Cur rent Gain h F E 4 9A (V C E =1V) Cut-o ff F requ ency f T (MH Z ) 6 3A I C =1 A 6 h FE – I C Characteristics (Typical) 0.1 8 12A Collector-Emi tter Voltage V C E (V) 3 0.02 (V CE =1V) 12 p) 100m A 10 0 I C – V BE Temperature Characteristics (Typical) 1.3 Tem A 4 0.4typ V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 0m 20 1 m 50 1.4typ 0.6typ se I C – V CE Characteristics (Typical) 12 –0.12 0.12 Weight : Approx 2.0g a. Part No. b. Lot No. B C E (Ca –5 10 tf (µs) ˚C 6 tstg (µs) ton (µs) 125 4 24 IB2 (A) IB1 (A) VBB2 (V) VBB1 (V) 2.4±0.2 2.2±0.2 Collector Current I C (A) IC (A) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 θ j - a (˚ C/W) RL (Ω) ø3.3±0.2 a b ■Typical Switching Characteristics (Common Emitter) VCC (V) 4.2±0.2 2.8 c0.5 e Te mp) e Tem p) V(BR)CEO 10.1±0.2 (Cas IEBO V µA (Cas V 6 100max –30˚C 60 VEBO Unit VCB=60V 4.0±0.2 VCEO Conditions 0.8±0.2 ICBO ±0.2 V 25˚C Unit 60 External Dimensions FM20(TO220F) (Ta=25°C) Ratings 3.9 Ratings VCBO E 8.4±0.2 Symbol ■Electrical Characteristics Symbol ( 400Ω ) Application : DC Motor Driver and General Purpose 16.9±0.3 ■Absolute maximum ratings (Ta=25°C) B 13.0min Built-in Diode at C–E Low VCE (sat) C Equivalent circuit 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 2 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 87 2SC4073 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) VCEO 400 V VEBO 10 V 5(Pulse10) A hFE IC Conditions Ratings Unit VCB=500V 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V VCE=4V, IC=2A 10 to 30 IB 2 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.3A 10typ MHz °C COB VCB=10V, f=1MHz 30typ pF Tstg –55 to +150 10.1±0.2 ø3.3±0.2 a b 3.9 V 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 100 2 10 –5 0.2 –0.4 1max 3max 0.5max Weight : Approx 2.0g a. Part No. b. Lot No. B C E I C – V BE Temperature Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) (I C /I B =5) 1 2 3 4 – V C E (sat) 0 0.01 0.05 0.1 Collector-Emitter Voltage V C E (V) 0.5 Collector Current I C (A) 1 t on •t stg • t f – I C Characteristics (Typical) 5 50 t on• t s tg • t f (µs) 25˚C –55˚C Switching Ti me 10 0.5 1 5 1 0.5 t on tf 0.1 0.1 0.5 20 20 10 10 10 s 0.3 Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than1% 20 50 100 88 500 ) mp) (Cas nk Co lle ctor Cu rr ent I C ( A) P c – T a Derating si 10 Collector-Emitter Voltage V C E (V) 1000 at 5 100 he 2 0.01 5 e Te p) 10 10 Without Heatsink 2 0.01 emp Tem 1 ite 0.5 0.05 se T 0.5 fin Without Heatsink Natural Cooling 0.05 1.4 30 1 0.1 1.2 In 0.1 1.0 ith 0.5 0.8 Time t(ms) 5 s C Co lle ctor Cu rren t I C (A) 0µ D 1 m s 0.6 W 10 5 1 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 1m 1 5 Collector Current I C (A) Collector Current I C (A) 5 t s tg V C C 200V I C :I B 1 :–I B 2 =10:1:2 0.4 θ j-a – t Characteristics M aximu m Power Dissipat io n P C (W) DC Curr ent Gain h FE 125˚C 0.1 0.2 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 0 Collector Current I C (A) h FE – I C Characteristics (Typical) 5 0.01 se 0 5 (Ca (Ca C –55˚C ˚ 55 ˚C 1 C 25˚C 5˚ θ j- a ( ˚ C/W) 0 12 2 Transient Thermal Resistance 0 –55˚C (Case Temp) p) 25˚C (Case Tem e Temp) 125˚C (Cas 3 125 50mA 1 1 ) 100mA 2 V B E (sat) emp 200mA eT 3 4 ˚C 300m A 2 as IB 4 Collector Current I C (A) 400 mA (V C E =4V) 5 25 =8 00 m A 60 0m A (C Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 5 2.4±0.2 2.2±0.2 VCC (V) I C – V CE Characteristics (Typical) 4.2±0.2 2.8 c0.5 4.0±0.2 ICBO 0.8±0.2 V ±0.2 Unit 500 8.4±0.2 Symbol Ratings VCBO External Dimensions FM20(TO220F) (Ta=25°C) 16.9±0.3 Symbol ■Electrical Characteristics 13.0min ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 10 50 100 Collector-Emitter Voltage V C E (V) 500 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC4130 Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor) 2 PC 30(Tc=25°C) Tj V hFE VCE=4V, IC=3A 10 to 30 A VCE(sat) IC=3A, IB=0.6A 0.5max W VBE(sat) IC=3A, IB=0.6A 1.3max V 150 °C fT VCE=12V, IE=–0.5A 15typ MHz Tstg –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF V 200 3 67 VBB2 (V) VBB1 (V) IB2 (A) tstg (µs) ton (µs) –0.6 0.3 I C – V CE Characteristics (Typical) tf (µs) 2.2max 1max 0.5max I C – V BE Temperature Characteristics (Typical) (I C /I B =5) 50mA 1 0 2 3 (C 125˚C V C E (sat) 0 0.02 4 0.05 0.1 Collector-Emitter Voltage V C E (V) 0.5 as e T 1 –5 5˚ 10 5 0.5 1 5 7 t s tg V C C 200V I C :I B 1 :–I B2 =10:1:2 1 0.5 t on tf 0.1 0.2 0.5 1 0µ s 5 7 ) 0.5 0.3 1 10 100 1000 Time t(ms) P c – T a Derating 30 s 5 s at si nk 0.05 he Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than 1% 0.1 ite Without Heatsink Natural Cooling fin 0.1 0.5 20 In 0.5 1 ith 1 0.05 1.2 W DC 1m m 1.0 10 Collector Curr ent I C (A) 10 0.8 1 M aximum Power Dissipa ti on P C (W) 10 0.6 4 20 20 5 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.2 Collector Current I C (A) Collector Current I C (A) Collect or Cur ren t I C (A) Transient Thermal Resistance t o n • t s t g• t f ( µs) –55˚C Swit ching Time D C Cur r ent Gai n h F E 5 25˚C 0.1 0 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 125˚C 0.05 mp 0 5 7 (V C E =4V) 2 0.02 Te C Collector Current I C (A) h FE – I C Characteristics (Typical) 50 se 2 θ j- a ( ˚C/W) 0 –55˚C (Case Temp) p) 25˚C (Case Tem e Temp) 125˚C (Cas 5˚C 2 V B E (sat) 1 4 12 100m A Collector Current I C (A) 200 mA p) ˚C 4 6 2 em IB Collector Current I C (A) 400mA (V C E =4V) 7 25 60 0m A =1 6 Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 40 0m A 10 00 m A Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 7 2.4±0.2 2.2±0.2 IB1 (A) –5 10 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 (Ca IC (A) RL (Ω) 1.35±0.15 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) ø3.3±0.2 a b 3.9 IC 16.9±0.3 µA 400min mp) IB 100max IC=25mA e Te A VEB=10V V(BR)CEO (Cas 7(Pulse14) IEBO 4.2±0.2 2.8 c0.5 4.0±0.2 V 10.1±0.2 0.8±0.2 V 10 µA ±0.2 400 VEBO 100max p) VCEO VCB=500V –55˚C ICBO Tem V Unit ase 500 Ratings C (C VCBO External Dimensions FM20(TO220F) (Ta=25°C) Conditions Symbol 25˚ Unit 8.4±0.2 ■Electrical Characteristics Ratings Symbol 13.0min ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 10 Without Heatsink 2 0.01 2 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 0.01 2 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 89 2SC4131 LOW VCE (sat) Silicon NPN Epitaxial Planar Transistor V IEBO VEB=15V 10max µA 15 V V(BR)CEO 50min V 15(Pulse25) A hFE IC=25mA 60 to 360 VCE=1V, IC=5A IB 4 A VCE(sat) IC=5A, IB=80mA 0.5max PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=80mA 1.2max V Tj 150 °C fT VCE=12V, IE=–1A 18typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 210typ pF ø3.3±0.2 a b 3.3 3.0 V 1.75 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 20 4 5 10 –5 0.08 –0.08 0.5typ 2.0typ 0.4typ I B =7mA 0 0 2 4 10A 0 0.002 6 5A 3A I C =1 A 0.01 Collector-Emitter Voltage V C E (V) 0.1 1 h FE – I C Temperature Characteristics (Typical) (V C E =1V) Typ 12 5˚ C 500 2 5 ˚C – 3 0 ˚C 100 1 70 0.02 10 15 0.1 5 s mp) he at si 20 nk 10 ite 5 fin 3 40 In 5 Without Heatsink 0.4 10 1000 ith Collecto r Curr ent I C (A) 0m Without Heatsink Natural Cooling 5 100 W DC s 10 s 1 Collector C urrent I C (A) 10 P c – T a Derating m 10 t on 1 1 Time t(ms) 10 tf 0.5 0.3 60 1m 0.5 90 10 15 0.5 40 1 0.1 0.08 0.1 1 1 Safe Operating Area (Single Pulse) V C C 20V I C =5A I B1 =–I B 2 =80mA t stg 1.5 3 Collector Current I C (A) t on •t stg •t f – I C Characteristics (Typical) 1.0 θ j-a – t Characteristics Ma ximum Po we r Dissipatio n P C ( W) 0.1 Collector Current I C (A) t o n• t s t g • t f (µ s) Transient Thermal Resistance D C Cur r ent Gai n h F E 1000 100 Switching Time D C Cur r ent Gai n h F E 1000 0.5 0 Base-Emittor Voltage V B E (V) (V C E =1V) 70 0.02 0 2 Base Current I B (A) h FE – I C Characteristics (Typical) 500 5 se 15A ) 0.5 10 mp 1.0 (Ca 15mA 4 E (V C E =1V) ˚C 25mA Weight : Approx 2.0g a. Part No. b. Lot No. 15 1.3 θ j - a ( ˚C/W) Collector Current I C (A) 40mA C 125 80mA 12 3.35 1.5 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) 85mA 8 B V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) 15 4.4 Te I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 5.45±0.1 1.5 RL (Ω) 0.8 2.15 5.45±0.1 VCC (V) 3.45 ±0.2 e Te Tstg 5.5±0.2 (Cas IC 15.6±0.2 –30˚C VEBO 0.8±0.2 µA 5.5 10max 1.6 VCB=100V ) 50 ICBO emp VCEO Unit se T V Ratings (Ca 100 External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Symbol 25˚C VCBO ■Electrical Characteristics 9.5±0.2 Unit 23.0±0.3 Ratings Symbol 16.2 ■Absolute maximum ratings (Ta=25°C) Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose 50 Collector-Emitter Voltage V C E (V) 100 3.5 0 0 50 100 Ambient Temperature Ta(˚C) 150 2SC4138 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Unit ICBO VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 10(Pulse20) A hFE VCE=4V, IC=6A 10 to 30 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.7A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF V IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 33.3 6 10 –5 0.6 –1.2 1max 3max 0.5max 0 0 1 2 3 0.1 0.5 1 5 t on •t stg • t f – I C Characteristics (Typical) 10 25˚C –55˚C 10 0.1 0.5 1 5 10 5 t s tg V C C 200V I C :I B1 :–I B 2 =10:1:2 1 0.5 t on tf 0.1 0.1 0.5 1 0µ 5 10 ) 0.1 5 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% 10 50 100 Collector-Emitter Voltage V C E (V) 500 40 ) emp mp) se T (Cas –55˚C nk 1 60 si Collecto r Cur ren t I C (A) e Te Te P c – T a Derating at Collector-Emitter Voltage V C E (V) 500 1000 he 100 5 0.5 100 ite 50 10 fin 0.1 10 1 In Without Heatsink Natural Cooling 5 mp 0.3 ith 0.5 se 0.5 W 1 1.2 80 10 5 1.0 Time t(ms) s 10 0.8 1 Maxim um Power Dissi pation P C (W) 10 0.6 3 30 30 s 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 1m 0.2 Collector Current I C (A) Collector Current I C (A) Collecto r Curr ent I C (A) Transient Thermal Resistance t o n• t s tg • t f (µ s) 125˚C Switching Ti me DC Cur rent Gain h FE 100 0.05 0 Base-Emittor Voltage V B E (V) (V C E =4V) 5 0.02 (Ca 0 10 Collector Current I C (A) h FE – I C Characteristics (Typical) (Ca V C E (sat) 0.05 Collector-Emitter Voltage V C E (V) 50 4 2 0 0.02 4 6 ˚C I B =100m A 2 V B E (sat) 25˚C 200m A 4 1 125 400mA 6 (V C E =4V) 8 Collector Current I C (A) 600 mA 1.4 E 10 θ j- a ( ˚C/W) Collector Current I C (A) 8 5.45±0.1 C I C – V BE Temperature Characteristics (Typical) (I C /I B =5) 1.4 1A 0.65 +0.2 -0.1 Weight : Approx 2.0g a. Part No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) A 2 3 B RL (Ω) 1.2 2.0±0.1 ø3.2±0.1 5.45±0.1 VCC (V) 10 a 4.8±0.2 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 15.6±0.4 9.6 b IB Tstg 4.0 IC 19.9±0.3 VEBO Symbol 1.8 Ratings V 5.0±0.2 Conditions 500 2.0 Unit VCBO Symbol External Dimensions MT-100(TO3P) (Ta=25°C) 4.0max ■Electrical Characteristics Ratings 20.0min ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 20 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 91 2SC4139 Application : Switching Regulator and General Purpose µA V IEBO VEB=10V 100max µA V 10 V V(BR)CEO IC=25mA 400min 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V Tj 150 °C fT VCE=12V, IE=–1.5A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF V 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 25 8 10 –5 0.8 –1.6 1max 3max 0.5max 0 1 2 3 5˚ C 0.5 1 5 –5 5 10 0 20 t on •t stg • t f – I C Characteristics (Typical) 8 t o n• t s t g• t f (µ s) 50 –55˚C 10 0.1 0.5 1 5 10 15 5 t s tg Transient Thermal Resistance 25˚C Sw it ching Time DC C urrent G ain h FE 125˚C V C C 200V I C :I B1 :I B2 =10:1:–2 1 0.5 t on tf 0.1 0.5 1 5 10 15 0.1 1 10 Temp) P c – T a Derating Ma xim um Powe r Dissipat io n P C (W) 100 Collector-Emitter Voltage V C E (V) 500 nk 50 si 10 at Without Heatsink Natural Cooling L=3mH IB2=–1A Duty:less than 1% 100 he Collector Curr ent I C (A) 1000 ite 1 5 100 fin 500 (Case 0.5 In 100 Collector-Emitter Voltage V C E (V) 92 1 ith 1 10 5 1.2 W Collect or Cur ren t I C (A) s Without Heatsink Natural Cooling 1.0 120 0µ 5 0.8 Time t(ms) 10 10 0.6 θ j-a – t Characteristics 50 50 0.4 2 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 50 10 0.2 Collector Current I C (A) Collector Current I C (A) 5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 mp) ˚C Collector Current I C (A) h FE – I C Characteristics (Typical) e Te 2 ( V C E (sat) 0.1 Collector-Emitter Voltage V C E (V) 5 0.02 4 Cas ) Temp 6 ˚C ( (Case 12 0 0.03 0.05 4 Collector Current I C (A) 125˚C 0.5 Temp) θ j- a (˚ C/W) 0 ase 25˚C (C 125 I B =100mA e Temp) –55˚C (Cas em p) ˚C 200mA 5 1.0 eT 400m A 8 V B E (sat) 25 600mA 10 (V CE =4V) 10 1.5 as Collector Current I C (A) 800 mA 1.4 E I C – V BE Temperature Characteristics (Typical) (I C /I B =5) C 1 .2 A 5A C Weight : Approx 6.0g a. Part No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 1. 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) 15 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.2±0.1 b –55˚C Tstg a ) IC Temp VEBO 2.0±0.1 (Case 400 4.8±0.2 25˚C VCEO 15.6±0.4 9.6 1.8 100max 5.0±0.2 VCB=500V V 2.0 ICBO 500 19.9±0.3 Unit VCBO External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit 20.0min Symbol Conditions Ratings Symbol 4.0max ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) 4.0 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) 50 3.5 Without Heatsink 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC4140 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Unit VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 18(Pulse36) A hFE VCE=4V, IC=10A 10 to 30 6 A VCE(sat) IC=10A, IB=2A 0.5max PC 130(Tc=25°C) W VBE(sat) IC=10A, IB=2A 1.3max V Tj 150 °C fT VCE=12V, IE=–2.0A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 165typ pF VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 20 10 10 –5 1 –2 1max 3max 0.5max 0 1 2 3 12 5˚ 0.5 1 5 –55˚C 10 5 10 18 5 1 0.5 t on tf 0.1 0.2 0.5 5 10 s 0µ 10 18 0.1 1 10 mp) e Te (Cas 1000 P c – T a Derating 130 50 100 Collector-Emitter Voltage V C E (V) 500 nk 10 si 0.03 5 at 500 he 0.1 0.05 ite 0.1 Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than 1% fin 1 0.5 100 In Collecto r Cur rent I C (A) 5 0.05 Collector-Emitter Voltage V C E (V) 100 ith Without Heatsink Natural Cooling 100 mp) mp Te 0.5 W 1 0.5 50 1.2 Time t(ms) 10 5 10 1.0 s DC 10 0.8 1 Maxim um Power Dissi pation P C (W) 1m ms 0.6 2 50 10 Co lle ctor Cu rre nt I C ( A) 1 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 50 0.2 Collector Current I C (A) Collector Current I C (A) 0.03 5 t s tg V C C 200V I C :I B1 :–I B 2 =10:1:2 Transient Thermal Resistance t o n• t s tg • t f (µ s) Switching Ti me DC Cur rent Gain h FE 25˚C 1 0 Base-Emittor Voltage V B E (V) 10 0.5 ) 0 10 18 t on •t stg • t f – I C Characteristics (Typical) 125˚C 0.1 se – (V C E =4V) 50 e Te C ˚ 55 Collector Current I C (A) h FE – I C Characteristics (Typical) 0.05 (Ca 4 C V C E (sat) Collector-Emitter Voltage V C E (V) 5 0.02 8 (Cas ) Temp ˚C (Case 0 0.02 0.05 0.1 4 Collector Current I C (A) 125˚C θ j - a (˚C /W) 0 e Temp) 25˚C (Cas 12 –55˚C I B =100mA Temp) –55˚C (Case eT em p) 25 ˚C 200mA 4 V B E (sat) 1 as 400m A 8 16 (C 600mA (V CE =4V) 18 125 Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) Collector Current I C (A) 12 1.4 E I C – V BE Temperature Characteristics (Typical) (I C /I B =5) 1.4 800 mA C Weight : Approx 6.0g a. Part No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 1.2 A 0.65 +0.2 -0.1 5.45±0.1 B IC (A) 16 2 3 5.45±0.1 RL (Ω) 1 .6 A ø3.2±0.1 1.05 +0.2 -0.1 VCC (V) 18 2.0±0.1 V ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) a 4.8±0.2 b IB Tstg 15.6±0.4 9.6 25˚C IC 4.0 VEBO Symbol 1.8 Ratings ICBO 5.0±0.2 Conditions V 2.0 Unit 500 19.9±0.3 Ratings VCBO Symbol External Dimensions MT-100(TO3P) (Ta=25°C) 4.0max ■Electrical Characteristics 20.0min ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 50 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 93 2SC4153 Silicon NPN Triple Diffused Planar Transistor ( Switchihg Transistor) µA 120min V hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz °C COB VCB=10V, f=1MHz 110typ pF 3.9 1.35±0.15 1.35±0.15 2.54 ■Typical Switching Characteristics (Common Emitter) –5 mA Collector Current I C (A) 100 mA 5 60m A 4 40mA 3 20m A 2 I B =10mA 1 0 0 1 2 3 3 6 2 1 0 0.005 0.01 3 1 0.1 1 0 2 0.5 0 Base Current I B (A) (V C E =4V) Typ 100 50 1 12 5˚ C Transient Thermal Resistance D C Cur r ent Gai n h F E 300 25˚C 100 –30 20 0.01 5 7 ˚C 50 0.1 Collector Current I C (A) 0.5 1 5 7 θ j-a – t Characteristics 5 1 0.5 0.2 1 10 100 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 1.0 1.1 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 300 D C Cur r ent Gai n h F E 4 5A 3A I C = 1A (V C E =4V) 0.5 5 2 4 h FE – I C Characteristics (Typical) 0.1 (V C E =4V) 7 Collector-Emitter Voltage V C E (V) 20 0.01 I C – V BE Temperature Characteristics (Typical) p) 150 0.5max Tem mA 5 3max V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) 200 0.5max Weight : Approx 2.0g a. Part No. b. Lot No. B C E se I C – V CE Characteristics (Typical) 7 –0.6 0.3 tf (µs) (Ca 10 tstg (µs) ton (µs) ˚C 3 IB2 (A) IB1 (A) 125 16.7 50 VBB2 (V) VBB1 (V) Collector Current I C (A) IC (A) 2.4±0.2 2.2±0.2 θ j - a (˚C /W) RL (Ω) VCC (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 ) –55 to +150 V Temp Tstg ø3.3±0.2 a b mp) A 100max 4.2±0.2 2.8 c0.5 (Case 7(Pulse14) IC VEB=8V IC=50mA 10.1±0.2 –30˚C V(BR)CEO µA 4.0±0.2 IEBO V 100max 0.8±0.2 V 8 Unit VCB=200V ±0.2 120 VEBO Conditions e Te VCEO Symbol (Cas ICBO 25˚C V 16.9±0.3 Unit 200 13.0min Ratings VCBO External Dimensions FM20(TO220F) (Ta=25°C) Ratings 8.4±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol Application : Humidifier, DC-DC Converter, and General Purpose Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 20 40 0µ s Natural Cooling Silicone Grease Heatsink: Aluminum in mm he 100x100x2 at si 10 nk Collector Curre nt I C (A) 150x150x2 ite 0.1 fin Without Heatsink Natural Cooling In 0.5 ith 1 20 W 10 ms 20 10 5 30 Maxim um Power Dissipatio n P C (W) 10 Typ Cut- off F req uenc y f T (MH Z ) 10 30 50x50x2 Without Heatsink 2 0 –0.01 0.05 –0.1 –1 Emitter Current I E (A) 94 –5 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC4296 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.7A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF 3.3 3.0 V 1.75 1.05 +0.2 -0.1 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 33 6 10 –5 0.6 –1.2 1max 3max 0.5max 1.4 I B = 100mA 2 0 0 1 2 3 0.1 0.5 1 5 0 10 t on •t stg • t f – I C Characteristics (Typical) 10 25˚C –55˚C 10 0.1 0.5 1 5 10 5 t s tg V C C 200V I C :I B 1 :–I B2 =10:1:2 1 0.5 t on tf 0.1 0.1 0.5 1 5 10 0.5 0.3 P c – T a Derating 100 Collector-Emitter Voltage V C E (V) 500 nk 50 si 10 40 at 0.02 5 he Collector-Emitter Voltage V C E (V) 500 ite 0.02 fin 0.1 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% 60 In 1 0.5 0.05 100 1000 ith 0.05 50 100 80 5 Without Heatsink Natural Cooling 10 10 Time t(ms) 10 s 1 5 1 µs s 0.5 0.1 1.2 W 5 m 0µ Collect or Cur re nt I C (A) 10 10 1.0 1 Ma xim um Powe r Dissipat io n P C (W) 50 s 0.8 3 30 1m 0.6 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 30 10 0.4 Collector Current I C (A) Collector Current I C (A) Collect or Cur ren t I C (A) Transient Thermal Resistance t o n• t s t g• t f (µ s) 125˚C Sw it ching Time DC C urrent G ain h FE 100 0.2 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 0 Collector Current I C (A) h FE – I C Characteristics (Typical) 5 0.02 ) V C E (sat) 0.05 Collector-Emitter Voltage V C E (V) 50 4 2 0 0.02 4 6 mp V B E (sat) Te 200m A 4 8 1 se 400mA 6 (V C E =4V) 10 (Ca 600 mA E ˚C Collector Current I C (A) 8 C Weight : Approx 6.5g a. Part No. b. Lot No. 125 1A Collector Current I C (A) A 3.35 1.5 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) θ j - a (˚C/W) 1.2 4.4 B V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 10 0.65 +0.2 -0.1 5.45±0.1 1.5 I C – V CE Characteristics (Typical) 0.8 2.15 ) Tstg ø3.3±0.2 a b emp A VEB=10V V(BR)CEO 3.45 ±0.2 mp) 10(Pulse20) IC IEBO 5.5±0.2 se T V 15.6±0.2 e Te V 10 µA (Cas 400 VEBO 100max –55˚C VCEO VCB=500V 0.8±0.2 ICBO 5.5 V Unit 1.6 500 Ratings (Ca VCBO External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Symbol 25˚C Unit 16.2 Ratings Symbol 9.5±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 20 3.5 0 Without Heatsink 0 50 100 150 Ambient Temperature Ta(˚C) 95 2SC4297 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) VCB=500V 100max µA VCEO 400 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30 IB 4 A VCE(sat) IC=7A, IB=1.4A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=7A, IB=1.4A 1.3max V Tj 150 °C fT VCE=12V, IE=–1A 10typ MHz °C COB VCB=10V, f=1MHz 105typ pF ø3.3±0.2 a b 3.3 3.0 V 1.75 1.05 +0.2 -0.1 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 28.5 7 10 –5 0.7 –1.4 1max 3max 0.5max 0 0 1 2 3 12 5˚ C –5 V C E (sat) 0.05 0.1 Collector-Emitter Voltage V C E (V) 0.5 1 5 5˚ 0 10 t on •t stg • t f – I C Characteristics (Typical) 8 t on• t s t g • t f (µ s) 50 –30˚C 10 0.5 1 5 10 12 5 t s tg V C C 200V I C :I B 1 :–I B2 =10:1:2 1 0.5 t on tf 0.1 0.5 1 30 10 0.1 1 10 ) 100 1000 Time t(ms) P c – T a Derating 80 100 500 Collector Curr ent I C (A) nk 50 Collector-Emitter Voltage V C E (V) si 10 40 at 0.1 5 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% he 500 0.5 ite 0.1 1 60 fin Without Heatsink Natural Cooling 5 In 1 Collector-Emitter Voltage V C E (V) mp) 0.5 ith 5 100 1.2 W Co lle ctor Cu rre nt I C ( A) 5 10 50 1.0 s 10 10 0.8 1 M aximum Power Dissipa ti on P C (W) 0µ 0.6 2 30 10 5 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 0.5 0.2 Collector Current I C (A) Collector Current I C (A) 96 Transient Thermal Resistance 25˚C Swi tchi ng T im e DC Cur rent Gain h F E 125˚C 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 p) 2 C Collector Current I C (A) h FE – I C Characteristics (Typical) 5 0.02 4 Temp 125˚C 6 e Te mp) Te (Case 8 Tem e Temp) 25˚C (Cas 0 0.02 4 Temp) (Case I B =100mA 2 –55˚C (Case se 200mA 4 1 ˚C 6 (V C E =4V) 125 400m A E 10 V B E (sat) Collector Current I C (A) 8 Weight : Approx 6.5g a. Part No. b. Lot No. 12 θ j - a (˚ C/W) Collector Current I C (A) 60 0m A C 3.35 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) as e 2 5 Temp ) ˚C 80 0m A 1.5 (C Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 1A 10 B V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 12 4.4 (Ca I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 5.45±0.1 1.5 VCC (V) 0.8 2.15 –55˚C –55 to +150 3.45 ±0.2 (Cas Tstg 5.5±0.2 25˚C IC 15.6±0.2 16.2 VEBO Symbol 0.8±0.2 Unit ICBO 5.5 Ratings V 1.6 Conditions 500 23.0±0.3 Unit VCBO Symbol External Dimensions FM100(TO3PF) (Ta=25°C) Ratings 9.5±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 20 3.5 0 Without Heatsink 0 50 100 Ambient Temperature Ta(˚C) 150 2SC4298 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) 100max µA V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V Tj 150 °C fT VCE=12V, IE=–1.5A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF 3.3 3.0 V 1.75 1.05 +0.2 -0.1 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 25 8 10 –5 0.8 –1.6 1max 3max 0.5max B 0 1 2 3 ) Temp 12 5˚ C Collector-Emitter Voltage V C E (V) 0.5 1 5 10 0 20 8 Sw it ching Time –55˚C 10 0.5 1 5 10 15 5 t s tg Transient Thermal Resistance t o n• t s t g• t f (µ s) 25˚C V C C 200V I C :I B1 :I B2 = 10:1:–2 1 0.5 t on tf 0.1 0.5 1 0.2 5 0.4 10 15 0.5 0.1 1 10 1000 P c – T a Derating In fin ite he 40 at si nk Ma xim um Powe r Dissipat io n P C (W) ith Without Heatsink Natural Cooling L=3mH IB2=–1A Duty:less than 1% 60 W Collector Curr ent I C (A) s Without Heatsink Natural Cooling 10 5 100 80 0µ 5 1.2 Time t(ms) 10 10 1.0 1 50 50 0.8 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 0.6 2 Collector Current I C (A) Collector Current I C (A) Collector Cur rent I C (A) DC C urrent G ain h FE 125˚C 0.1 0 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 50 ) ˚C (V C E =4V) 0.05 mp) 2 5 –5 Collector Current I C (A) h FE – I C Characteristics (Typical) 5 0.02 4 ( V C E (sat) 0.1 e Te (Case 6 Temp) 125˚C 0.5 Temp) Cas ase 25˚C (C 0 0.03 0.05 4 (V CE =4V) ˚C ( e Temp) –55˚C (Cas θ j- a ( ˚C/W) 0 E 125 I B =100mA Collector Current I C (A) 200mA 5 1.0 em p) ˚C 400mA Weight : Approx 6.5g a. Part No. b. Lot No. 8 V B E (sat) eT 600m A 10 C 25 Collector Current I C (A) 800 mA 3.35 1.5 10 1.5 as 1. 2A C 5A Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 1. 4.4 I C – V BE Temperature Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) (I C /I B =5) 15 0.65 +0.2 -0.1 5.45±0.1 1.5 I C – V CE Characteristics (Typical) 0.8 2.15 (Case Tstg ø3.3±0.2 a b –55˚C IC Temp VEBO 3.45 ±0.2 (Case 400 5.5±0.2 25˚C VCEO 15.6±0.2 16.2 V 0.8±0.2 VCB=500V 500 5.5 ICBO VCBO 1.6 Unit Symbol 23.0±0.3 Ratings Unit External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Ratings Symbol 9.5±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 20 Without Heatsink 1 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 1 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 97 2SC4299 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.3A 6typ MHz °C COB VCB=10V, f=1MHz 50typ pF ø3.3±0.2 a b 3.3 3.0 V 1.75 1.05 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 250 250 1 10 –5 0.15 –0.5 1max 5max 1max 0 I B =50mA 0 1 2 3 125˚C Temp) –55 ˚C V C E (sat) 0.05 0.1 ( 12 0.5 1 5˚C 0 3 t on •t st g • t f – I C Characteristics (Typical) 8 t o n• t s t g• t f (µ s) 50 –55˚C 10 3 t s tg VCC 250V IC:IB1:–IB2 =2:0.3:1 Const. 1 tf 0.5 t on 0.2 0.1 0.5 10 1 3 0.5 0.3 1 10 70 5 60 40 he at si nk Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% ite 1 50 fin Without Heatsink Natural Cooling P c – T a Derating 10 0.5 1000 In 0.5 100 ith 1 1.2 Time t(ms) s Collecto r Cur rent I C (A) 0µ 1.0 W Collector Cur rent I C (A) 10 0.8 1 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 0.6 3 Collector Current I C (A) Collector Current I C (A) 5 0.4 θ j-a – t Characteristics Ma xim um Powe r Dissipat io n P C (W) 1 5 Transient Thermal Resistance 25˚C Sw it ching Time DC C urrent G ain h FE 125˚C 0.5 0.2 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 Collector Current I C (A) h FE – I C Characteristics (Typical) 0.05 1 p) (Case 2 mp) e Temp) 25˚C (Cas Collector-Emitter Voltage V C E (V) 5 0.01 (V CE =4V) e Te p) –55˚C (Case Tem 0 0.02 4 E ase Tem 1 Weight : Approx 6.5g a. Part No. b. Lot No. (Cas 100mA C 3.35 V B E (sat) 1 Collector Current I C (A) 200mA 2 0.65 +0.2 -0.1 3 θ j- a ( ˚C/W) Collector Current I C (A) 300mA (I C /I B =5) 2 5 Cas eT ˚C e m p) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 3 1.5 I C – V BE Temperature Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 400mA 500mA B 4.4 125˚C I C – V CE Characteristics (Typical) +0.2 -0.1 5.45±0.1 1.5 VCC (V) 0.8 2.15 –55˚C (C –55 to +150 3.45 ±0.2 mp) Tstg 5.5±0.2 ase Te IC 15.6±0.2 25˚C (C VEBO 0.8±0.2 Ratings ICBO 5.5 Conditions V 1.6 Unit 900 23.0±0.3 Ratings VCBO Symbol External Dimensions FM100(TO3PF) (Ta=25°C) 9.5±0.2 Symbol ■Electrical Characteristics (Ta=25°C) 16.2 ■Absolute maximum ratings Application : Switching Regulator and General Purpose 30 20 10 Without Heatsink 0.1 50 100 500 Collector-Emitter Voltage V C E (V) 98 1000 0.1 50 100 500 Collector-Emitter Voltage V C E (V) 1000 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC4300 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 75typ pF ø3.3±0.2 a b 3.3 3.0 V 1.75 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 250 125 2 10 –5 0.3 –1 1max 5max 1max 2 I B =100mA 1 0 1 2 3 V B E (sat) 1 –55˚C (Case Temp) 25˚C (Case Temp) e Temp) 125˚C (Cas V C E (sat) 0 0.03 0.05 4 C 125˚C ( 0.1 0.5 Collector-Emitter Voltage V C E (V) as 1 5 –55˚C 10 1 5 5 t s tg VCC 250V IC:IB1:–IB2 =2:0.3:1 Const. 1 tf 0.5 t on 0.2 0.1 0.5 20 20 10 10 0.1 1 10 0.01 50 Co lle ctor Cu rren t I C ( A) P c – T a Derating 80 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 100 500 Collector-Emitter Voltage V C E (V) 1000 60 40 nk Collector-Emitter Voltage V C E (V) 1000 1000 si 500 100 at 100 0.5 he 50 1 ite 10 2 Time t(ms) 0.5 0.05 1.2 fin 0.05 0.01 5 1 0.1 1.0 In Without Heatsink Natural Cooling 0.8 ith 1 0.6 W Collecto r Cur rent I C (A) s 0.5 0.1 1 5 µs 0µ 10 10 s 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 1m 0.2 Collector Current I C (A) Collector Current I C (A) 5 0 Base-Emittor Voltage V B E (V) Maxim um Power Dissipatio n P C ( W) 0.5 mp) 0 Transient Thermal Resistance t on • t st g• t f (µs) Switching T im e D C Cur r ent Gai n h F E 25˚C 0.1 2 10 t on •t stg • t f – I C Characteristics (Typical) 125˚C 0.05 3 1 10 5 0.02 4 e (V C E =4V) 50 E (V CE =4V) Collector Current I C (A) h FE – I C Characteristics (Typical) C e Te 200mA 3.35 Weight : Approx 6.5g a. Part No. b. Lot No. (Cas 3 2 θ j- a ( ˚C/W) Collector Current I C (A) 300mA 0.65 +0.2 -0.1 1.5 5 Collector Current I C (A) 400 mA 4.4 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) Te m p) 25˚ C – 5 5 ˚C Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 60 0m A 500m A 0 B V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 700mA 4 1.5 5.45±0.1 125˚C I C – V CE Characteristics (Typical) 5 0.8 2.15 5.45±0.1 VCC (V) 3.45 ±0.2 p) Tstg 5.5±0.2 ase Tem IC 15.6±0.2 –55˚C (C VEBO 0.8±0.2 µA 23.0±0.3 100max 5.5 800 VCB=800V 1.6 VCEO ICBO ) V Unit Temp 900 Ratings (Case VCBO External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Symbol 25˚C Unit 16.2 Ratings 9.5±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol Application : Switching Regulator and General Purpose 20 3.5 0 Without Heatsink 0 50 100 150 Ambient Temperature Ta(˚C) 99 2SC4301 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 IB 3.5 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.2max V Tj 150 °C fT VCE=12V, IE=–1A 6typ MHz °C COB VCB=10V, f=1MHz 105typ 3.3 3.0 V 1.05 +0.2 -0.1 1.5 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 250 83 3 10 –5 0.45 –1.5 1max 5max 1max 0 1 2 3 0.05 0.1 Collector-Emitter Voltage V C E (V) 5 ˚C –5 0.5 1 10 0.1 0.5 1 5 7 t s tg 5 VCC 250V I C :I B1 :I B2 =2:0.3:–1 Const. 1 tf 0.5 t on 0.2 0.1 0.5 20 10 5 7 p) 0.5 0.1 1 10 100 1000 P c – T a Derating ite he 40 at si nk Ma xim um Powe r Dissipation P C (W) fin Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty :less than1% 60 In Collect or Cur ren t I C (A) ) mp) 1 ith 1 0.5 1.2 80 5 Without Heatsink Natural Cooling 1.0 Time t(ms) 10 1 0.8 W Co lle ctor Cu rren t I C (A) 1 s 5 0.6 2 20 0µ 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.2 Collector Current I C (A) Collector Current I C (A) 0.5 Transient Thermal Resistance t on • t s t g• t f ( µs) Sw it ching Time DC C urrent G ain h FE C –55˚C 0.05 0 Base-Emittor Voltage V B E (V) 10 5 0.02 e Te 0 5 7 t on • t stg • t f – I C Characteristics (Typical) 50 5˚ (Cas 5˚C (V C E =4V) 12 125˚C 2 Collector Current I C (A) h FE – I C Characteristics (Typical) 25˚C 4 Temp Collector Current I C (A) ) emp 12 V C E (sat) 0 0.02 4 (C θ j - a (˚C /W ) 0 emp ase T eT I B =100mA 2 ) 125˚C (V CE =4V) as 200mA p) ase Tem 25˚C (C E 6 ) (Case Temp (C 300 mA C Weight : Approx 6.5g a. Part No. b. Lot No. 7 V B E (sat) –55˚C 3.35 1.5 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) 1 4.4 ˚C Collector Current I C (A) 500mA 0.65 +0.2 -0.1 5.45±0.1 25 Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 6 4 B V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 700m A 0.8 2.15 5.45±0.1 VCC (V) 1A 1.75 pF ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.3±0.2 a b ase Tem –55 to +150 3.45 ±0.2 (Case Tstg 5.5±0.2 –55˚C (C IC 15.6±0.2 25˚C VEBO 0.8±0.2 Ratings ICBO 5.5 Conditions V 1.6 Unit 900 23.0±0.3 Ratings VCBO Symbol External Dimensions FM100(TO3PF) (Ta=25°C) 9.5±0.2 Symbol ■Electrical Characteristics 16.2 ■Absolute maximum ratings (Ta=25°C) 20 Without Heatsink 0.1 50 100 500 Collector-Emitter Voltage V C E (V) 100 1000 0.1 50 100 500 Collector-Emitter Voltage V C E (V) 1000 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC4304 Silicon NPN Triple Diffused Planar Transistor (High Voltage High Speed Switchihg Transistor) hFE µA 800min V VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 35(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.3A 15typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF Tstg 3.9 V 0.1 300m A 2 200m A 100mA 1 I B =50mA 1 0 2 3 0.7max V C E (sat) –55˚C (Case Temp) 25˚C (Case Temp) 125˚C (Case Temp) V B E (sat) 1 p) –55˚C (Case Tem p) 25˚C (Case Tem Temp) 125˚C (Case 0 0.01 4 0.05 0.1 0.5 1 0 7 5 10 5 1 3 t s tg V C C 250V I C :I B1 :–I B 2 =10:1.5:5 Transient Thermal Resistance t o n• t s t g• t f (µ s) –55˚C Sw it ching Time DC C urrent G ain h FE 25˚C 0.5 1 tf 0.5 t on 0.1 0.1 0.5 10 5 5 1 2 1 10 Collecto r Cur rent I C (A) 20 nk Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 30 si 1000 P c – T a Derating at 500 1000 he 100 Collector-Emitter Voltage V C E (V) 100 ite Collector Curr ent I C (A) 0.3 fin 50 0.5 In s ) 0.01 0.005 50 10 1 ith s C 0.1 0.01 1.2 W 0µ 1 0.005 2 1.0 4 Ma xim um Powe r Dissipat io n P C (W) 10 µs 5 ms =2 10 ( Tc Without Heatsink Natural Cooling 0.8 35 0.5 0.05 0.6 Time t(ms) 50 1m DC 0.1 0.05 5 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 1 0.2 Collector Current I C (A) Collector Current I C (A) 0.5 0 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 125˚C 0.1 1 3 (V C E =4V) 0.05 2 Collector Current I C (A) h FE – I C Characteristics (Typical) 2 0.01 (V C E =4V) 3 2 Collector-Emitter Voltage V C E (V) 50 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) mp) Collector Current I C (A) 500 mA 0 4.0max 0.7max e Te 700mA 2.4±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 3 –0.35 tf (µs) Cas I C – V CE Characteristics (Typical) tstg (µs) ton (µs) ˚C ( –5 10 IB2 (A) 125 0.7 357 IB1 (A) Collector Current I C (A) 250 VBB2 (V) VBB1 (V) 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 θ j - a ( ˚ C/W) IC (A) RL (Ω) 1.35±0.15 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) ø3.3±0.2 a b p) A 100max e Tem 3(Pulse6) IC VEB=7V IC=10mA (Cas V(BR)CEO 4.2±0.2 2.8 c0.5 4.0±0.2 IEBO V 10.1±0.2 0.8±0.2 V 7 µA ±0.2 800 VEBO 100max –55˚C VCEO VCB=800V mp) ICBO Unit e Te V Ratings (Cas 900 External Dimensions FM20(TO220F) (Ta=25°C) Conditions 25˚C VCBO Symbol 16.9±0.3 Unit 8.4±0.2 ■Electrical Characteristics Ratings Symbol 13.0min ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 10 Without Heatsink 100 500 Collector-Emitter Voltage V C E (V) 1000 2 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 101 2SC4381/4382 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1667/1668) V ICBO VCB= VEBO 6 V IEBO IC 2 A V(BR)CEO 150 VEB=6V 200 V µA 10max IC=25mA 150min 200min 1 A hFE VCE=10V, IC=0.7A 60min PC 25(Tc=25°C) W VCE(sat) IC=0.7A, IB=0.07A 1.0max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 35typ pF Tstg 1.35±0.15 1.35±0.15 100 I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) A m 50 Collector Current I C (A) 1.6 1.2 I B =5mA/Step 0.4 0 0 2 4 6 8 3.0typ 1.0typ 2 1 I C = 0 .5 0 10 2 10 100 0 1000 0 (V C E =10V) 50 0.1 1 125 ˚C 2 5 ˚C – 3 0 ˚C 100 50 30 0.01 2 0.1 Collector Current I C (A) 6 1 2 1 0.5 1 10 100 Safe Operating Area (Single Pulse) (V C E =12V) P c – T a Derating 30 5 1m he at si nk Collecto r Curr ent I C (A) ite Without Heatsink Natural Cooling 1.2SC4381 2.2SC4382 fin 0.1 In 10 20 ith Typ W M aximum Power Dissip ation P C (W) s s ms C 5m 20 D 1 20 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 1.0 θ j-a – t Characteristics Transient Thermal Resistance DC Cur rent Gain h F E 100 0.5 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) Typ 30 1 2A 1A A 400 30 0.01 (V C E =10V) Base Current I B (mA) 400 DC Cur rent Gain h F E I C – V BE Temperature Characteristics (Typical) 2 (V C E =10V) Cut-o ff F requ ency f T (MH Z ) 1.5typ 3 Collector-Emitter Voltage V C E (V) h FE – I C Characteristics (Typical) Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) 2 0.8 –100 tf (µs) ) –5 tstg (µs) ton (µs) Temp 10 IB2 (mA) (Case 1 IB1 (mA) VBB2 (V) 125˚C 20 20 VBB1 (V) Collector Current I C (A) IC (A) 2.4±0.2 2.2±0.2 θ j - a (˚ C/W) RL (Ω) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) ø3.3±0.2 a b V IB 4.2±0.2 2.8 c0.5 4.0±0.2 200 10.1±0.2 e Temp) 150 µA 0.8±0.2 VCEO 10max ±0.2 V External Dimensions FM20(TO220F) 3.9 200 Unit –55˚C (Cas 150 Conditions e Temp) VCBO Symbol 25˚C (Cas 2SC4381 2SC4382 Unit 8.4±0.2 Symbol (Ta=25°C) Ratings 2SC4381 2SC4382 16.9±0.3 Ratings Application : TV Vertical Output, Audio Output Driver and General Purpose ■Electrical Characteristics (Ta=25°C) 13.0min ■Absolute maximum ratings 10 Without Heatsink 0 –0.01 –0.1 –0.5 Emitter Current I E (A) 102 1 2 0.01 –1 –2 1 10 100 Collector-Emitter Voltage V C E (V) 300 0 0 50 100 Ambient Temperature Ta(˚C) 150 2SC4388 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1673) V ICBO VCB=200V 10max µA VCEO 180 V IEBO VEB=6V 10max µA IC=50mA 180min VCE=4V, IC=3A 50min∗ V IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 85(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 300typ –55 to +150 ∗hFE Rank °C pF 1.75 16.2 Tstg ø3.3±0.2 a b 3.0 hFE 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 1.5 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 40 4 10 10 –5 1 –1 0.5max 1.8max 0.6max I B =20mA 0 1 0 2 3 I C =10A 0 4 0 0.5 1.0 1.5 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 300 200 0.5 1 5 Transient Thermal Resistance DC Cur rent Gain h FE Typ 50 100 25˚C 50 –30˚C 20 0.02 10 15 0.1 Collector Current I C (A) 1 0.5 2 1 5 10 15 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 40 100 10 Typ 5 he at si nk Without Heatsink Natural Cooling ite 0.5 60 fin 1 80 In 10 s DC ith 20 0m s W Collect or Cur ren t I C (A) 10 m Maxim um Power Dissipation P C (W) 10 Cut- off F req uency f T (M H Z ) DC Curr ent Gain h F E 125˚C 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 20 0.02 0 2.0 Base Current I B (A) h FE – I C Characteristics (Typical) mp) 5A Collector-Emitter Voltage V C E (V) 100 5 e Te 1 (Cas 50mA 5 E 10 25˚C 100 mA 2 mp) 20 0m A 10 e Te A C (V C E =4V) Cas 300m 3.35 Weight : Approx 6.5g a. Part No. b. Lot No. 15 3 ˚C ( mA 125 0 50 Collector Current I C (A) A 0.65 +0.2 -0.1 1.5 I C – V BE Temperature Characteristics (Typical) θ j - a (˚C /W) Collector Current I C (A) 7 m 00 4.4 B V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 1A 15 0.8 2.15 O(50 to 100), P(70 to 140), Y(90 to 180) ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 3.45 ±0.2 Temp) V(BR)CEO A 5.5±0.2 (Case V 15 15.6±0.2 23.0±0.3 6 IC 0.8±0.2 Unit 200 5.5 Unit Ratings 1.6 Ratings VCBO VEBO External Dimensions FM100(TO3PF) (Ta=25°C) Conditions 3.3 Symbol –30˚C Symbol ■Electrical Characteristics 9.5±0.2 ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 40 20 0.1 0 –0.02 0.05 –0.1 –1 Emitter Current I E (A) –10 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 103 2SC4418 Application : Switching Regulator and General Purpose µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=1.5A 10 to 30 IB 2 A VCE(sat) IC=1.5A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=1.5A, IB=0.3A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.3A 20typ MHz °C COB VCB=10V, f=1MHz 30typ pF Tstg –55 to +150 3.9 V 0.15 1.4 A 1A Collector Current I C (A) 4 60 0m A 400 mA 3 200 mA 2 100 mA I B =50mA 1 0 0 1 2 0.5max 3 –55˚C (Case Temp) 2 25˚C (Case Temp) 125˚C (Case Temp) V B E (sat) 1 –55˚C (Case Temp) Temp) 25˚C (Case p) ase Tem (C C 5˚ 12 0 0.01 4 0.05 0.1 0.5 1 0 5 1 5 5 V C C 200V I C :I B 1 :I B2 =10:1:–2 t s tg 1 0.5 tf t on 0.1 0.1 0.5 1 3 1 0.5 0.4 20 s P c – T a Derating 10 µs 5 at si nk Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than 1% he 0.1 0.05 ite Without Heatsink Natural Cooling fin 0.1 0.5 20 In 0.5 1 ith s 1 0.05 1000 30 M aximum Power Dissipa ti on P C ( W) m 50 s Collect or Cur re nt I C (A) 10 0µ 100 W DC 10 10 Time t(ms) 20 1m 1 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 1.6 5 Collector Current I C (A) Collector Current I C (A) Collector Cur rent I C (A) Transient Thermal Resistance 5 5 1.0 θ j-a – t Characteristics θ j - a (˚C /W) t o n• t s t g• t f (µ s) Sw it ching Time DC C urrent G ain h FE 10 10 0 Base-Emittor Voltage V B E (V) 8 Typ 0.5 2 t on •t stg • t f – I C Characteristics (Typical) 100 0.1 3 1 (V C E =4V) 0.05 4 Collector Current I C (A) h FE – I C Characteristics (Typical) 2 0.01 (V CE =4V) 5 V C E (sat) Collector-Emitter Voltage V C E (V) 50 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) eT em Tem p) p e Te ) mp) A 2.5max (C 1.8 2.4±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 5 1max –0.3 tf (µs) tstg (µs) as I C – V CE Characteristics (Typical) ton (µs) IB2 (A) 5˚C –5 10 1.5 IB1 (A) 12 133 200 VBB2 (V) VBB1 (V) IC (A) 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 Collector Current I C (A) RL (Ω) 1.35±0.15 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) ø3.3±0.2 a b Cas A se 5(Pulse10) IC ˚C ( V Ca V 10 4.2±0.2 2.8 c0.5 –55 400 VEBO C( VCEO 10.1±0.2 25˚ ICBO 4.0±0.2 Unit 100max V 0.8±0.2 Ratings VCB=500V Unit 500 16.9±0.3 Conditions Symbol Ratings VCBO Symbol External Dimensions FM20(TO220F) (Ta=25°C) ±0.2 ■Electrical Characteristics 13.0min ■Absolute maximum ratings (Ta=25°C) 8.4±0.2 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) 10 Without Heatsink 2 0.01 2 5 10 50 100 Collector-Emitter Voltage V C E (V) 104 500 0.01 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC4434 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) 100max µA VCEO 400 V IEBO VEB=10V 100max µA VEBO 10 V V(BR)CEO IC=25mA 400min V 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 25 5 A VCE(sat) IC=8A, IB=1.6A 0.7max PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V Tj 150 °C fT VCE=12V, IE=–1.5A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 135typ pF VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 25 8 10 –5 1.6 –3.2 0.5max 2.0max 0.15max 2 3 Switching Ti me DC Cur rent Gain h F E 25˚C 10 1 0.1 0.5 Collector Current I C (A) 5 10 15 t on 0.1 tf 0.05 0.5 1 5 10 15 0µ p) 25˚ C (C ase Tem p) p) em Tem eT se 1 0.5 0.1 1 10 100 1000 P c – T a Derating 120 Collector Cur rent I C (A) nk Collector-Emitter Voltage V C E (V) 500 si 100 at 50 he 10 ite 0.1 5 fin 500 0.5 Without Heatsink Natural Cooling L=3mH IB2=–1A Duty:less than 1% In 0.1 1 ith Without Heatsink Natural Cooling 5 100 W 1 Collector-Emitter Voltage V C E (V) Ca as 15 2 s 5 100 1.0 Time t(ms) 10 50 0.5 θ j-a – t Characteristics Reverse Bias Safe Operating Area 10 10 0 Base-Emittor Voltage V B E (V) 40 5 (C 0˚C 0 10 Collector Current I C (A) 10 0.5 4 C( ) 7 5 ˚C 5 t s tg Safe Operating Area (Single Pulse) Collect or Cur ren t I C (A) 1 1 V C C 200V I C :I B 1 :–I B2 =5:1:2 0.5 Collector Current I C (A) 40 6 2 5 t o n • t s tg • t f ( µs) 150˚C 75˚C 0.5 8 V C E (sat) t on •t stg • t f – I C Characteristics (Typical) (V C E =4V) 0.1 0˚ 10 Collector Current I C (A) h FE – I C Temperature Characteristics (Typical) 5 0.05 emp 15 Collector-Emitter Voltage V C E (V) 50 eT 1 0 0.05 4 Temp) θ j - a (˚ C/W) 1 ase 50˚C (C Transient Thermal Resistance 0 e Temp) 25˚C (Cas e Temp) as (C 75˚C M aximum Power Dissipa ti on P C (W) 0 V B E (sat) ˚C I B =100m A 2 1 as 200m A 4 12 25 400mA 6 (V C E =4V) 15 14 (C 600 mA 1.4 E I C – V BE Temperature Characteristics (Typical) (I C /I B =5) C Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) Collector Current I C (A) 8 C Weight : Approx 6.0g a. Part No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 1A 0.65 +0.2 -0.1 5.45±0.1 B IC (A) A 2 3 5.45±0.1 RL (Ω) 1.2 ø3.2±0.1 1.05 +0.2 -0.1 VCC (V) 10 2.0±0.1 V ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 4.8±0.2 b IB Tstg a 75˚ IC 15.6±0.4 9.6 1.8 Unit VCB=500V 5.0±0.2 Ratings ICBO 2.0 Conditions V 4.0 Unit 500 19.9±0.3 Ratings VCBO 20.0min Symbol External Dimensions MT-100(TO3P) (Ta=25°C) 4.0max ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol Application : Switching Regulator, Lighting Inverter, and General Purpose 50 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 105 2SC4445 Application : Switching Regulator and General Purpose Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO V 3(Pulse6) A hFE IC=10mA 800min VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 60(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.3A 15typ MHz °C COB VCB=10V, f=1MHz 50typ pF 3.0 3.3 1.5 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 250 357 0.7 10 –5 0.1 –0.35 0.7max 4max 0.7max 2 3 V C E (sat) 0.05 0.1 0.5 1 7 5 –55˚C 10 5 0.5 1 3 1 tf 0.5 t on 0.1 0.1 0.5 5 0.3 1 10 50 Collector Curr ent I C (A) p) nk 5 si 1000 at 500 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 40 he 100 Collector-Emitter Voltage V C E (V) P c – T a Derating ite 0.05 1000 fin 0.05 100 60 0.5 0.1 mp) 10 Time t(ms) 1 0.1 106 2 0.5 In Without Heatsink Natural Cooling 1.2 ith s 0.5 1.0 W 0µ µs 10 1 0.8 1 Ma xim um Powe r Dissipat io n P C (W) 5 50 1 50 Collector Curr ent I C (A) 10 0.6 4 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 10 0.4 Collector Current I C (A) Collector Current I C (A) 5 t s tg V C C 250V I C :I B1 :–I B 2 =10:1.5:5 Transient Thermal Resistance t o n• t s t g• t f (µ s) 25˚C 0.2 θ j-a – t Characteristics t on •t stg • t f – I C Characteristics (Typical) Sw it ching Time DC C urrent G ain h FE 125˚C 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 mp) 0 3 Collector Current I C (A) h FE – I C Temperature Characteristics (Typical) 2 0.01 1 e Tem p) –55˚C (Case Tem p) 25˚C (Case Tem Temp) 125˚C (Case (Cas V B E (sat) 1 2 e Te 25˚C (Case Temp) 125˚C (Case Temp) Cas –55˚C (Case Temp) Collector-Emitter Voltage V C E (V) 50 (V C E =4V) 2 0 0.01 4 E 3 θ j - a ( ˚ C/W) 1 0 C Weight : Approx 6.5g a. Part No. b. Lot No. –55˚C 50mA 3.35 1.5 ˚C ( 100mA 1 4.4 125 200m A 0.65 +0.2 -0.1 5.45±0.1 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) Collector Current I C (A) 300m A 2 0 B V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 500 mA 0.8 2.15 1.05 +0.2 -0.1 RL (Ω) I B =700mA 1.75 5.45±0.1 VCC (V) 3 ø3.3±0.2 a b V ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 3.45 ±0.2 e Te –55 to +150 5.5±0.2 (Cas Tstg 15.6±0.2 25˚C IC 0.8±0.2 Ratings ICBO 5.5 Conditions V 23.0±0.3 Unit 900 VEBO External Dimensions FM100(TO3PF) (Ta=25°C) VCBO Symbol Symbol 1.6 ■Electrical Characteristics Ratings 16.2 ■Absolute maximum ratings (Ta=25°C) 9.5±0.2 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) 20 Without Heatsink 100 Collector-Emitter Voltage V C E (V) 500 1000 3.5 0 0 50 100 Ambient Temperature Ta(˚C) 150 2SC4466 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1693) IEBO VEBO 6 V V(BR)CEO IC 6 A hFE µA VEB=6V 10max µA V IC=50mA 80min VCE=4V, IC=2A 50min∗ a A VCE(sat) IC=2A, IB=0.2A 1.5max V 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 110typ pF –55 to +150 °C ∗hFE Rank 20.0min 3 PC 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 5.45±0.1 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 30 10 3 10 –5 0.3 –0.3 0.16typ 2.60typ 0.34typ I B =10mA 0 0 1 2 3 2A 0 4 0 0.5 1.0 (V C E =4V) 200 DC Cur rent Gain h FE 125˚C Typ 50 1 100 25˚C –30˚C 50 20 0.02 56 0.1 Collector Current I C (A) 0.5 1 56 5 1 2 0.5 0.3 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 20 60 10 si nk Collector Curr ent I C ( A) at Without Heatsink Natural Cooling he 0.5 ite 1 40 fin 10 DC In 20 5 ith Typ 1m s ms 0m s 10 W 30 10 M aximum Power Dissipa ti on P C (W) 40 Cu t-off Fre quen cy f T (M H Z ) DC Curr ent Gain h F E 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 300 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 1.5 Base Current I B (A) h FE – I C Characteristics (Typical) 30 0.02 mp) p) I C =6A 4A Collector-Emitter Voltage V C E (V) 100 2 e Tem 1 (Cas 20mA 2 4 25˚C 30mA 2 e Te 50 mA 4 (V C E =4V) 6 3 Cas A 80m ˚C ( A 125 1 m 00 Collector Current I C (A) A θ j - a (˚ C/W) 15 0m 1.4 E I C – V BE Temperature Characteristics (Typical) Transient Thermal Resistance A C Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) 20 0m 0.65 +0.2 -0.1 5.45±0.1 B 6 2.0±0.1 ø3.2±0.1 O(50 to100), P(70 to140), Y(90 to180) I C – V CE Characteristics (Typical) 4.8±0.2 b IB Tstg 15.6±0.4 9.6 1.8 V 10max 5.0±0.2 80 Unit VCB=120V ) VCEO Conditions Temp ICBO (Case V –30˚C 120 2.0 Unit VCBO External Dimensions MT-100(TO3P) (Ta=25°C) Ratings 19.9±0.3 Symbol 4.0 ■Electrical Characteristics Ratings Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 20 Without Heatsink 0 –0.02 0.1 –0.1 –1 Emitter Current I E (A) –6 5 10 50 Collector-Emitter Voltage V C E (V) 100 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 107 2SC4467 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694) Ratings Unit ICBO VCB=160V 10max µA VCEO 120 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC 8 A hFE 120min IC=50mA V VCE=4V, IC=3A 50min∗ 19.9±0.3 Symbol A VCE(sat) IC=3A, IB=0.3A 1.5max V 80(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 200typ pF –55 to +150 °C ∗hFE Rank 20.0min 3 PC 5.45±0.1 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 40 10 4 10 –5 0.4 –0.4 0.13typ 3.50typ 0.32typ 0 0 1 2 3 0 4 0 0.1 0.2 0.3 0.4 0 (V C E =4V) 200 Typ 50 1 5 100 25˚C –30˚C 50 20 0.02 8 Transient Thermal Resistance DC Curr ent Gain h FE 125˚C 100 0.5 0.1 Collector Current I C (A) ) Temp mp) (Case 1.0 1.5 1 5 3 1 0.5 0.3 8 1 10 100 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) e Te 0.5 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 200 Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 40 80 20 10 10 s 40 at si nk Without Heatsink Natural Cooling he 0.5 ite 10 1 60 fin 20 DC In Collector Cur rent I C (A) 5 Typ ith M aximum Power Dissipa ti on P C ( W) 30 m 100ms W Cut-o ff Fr equ ency f T (M H Z ) DC Curr ent Gain h FE 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 mp) 4A 2A 0.5 0.6 0.7 0.8 0.9 1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 e Te I C =8A Collector-Emitter Voltage V C E (V) 20 0.02 2 –30˚C I B =10mA 1 Cas 2 (Cas 20mA 4 ˚C ( 4 6 25˚C 50m A 2 125 75 m A 6 (V C E =4V) 8 3 Collector Current I C (A) A 1.4 E I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚ C/W) m 100 C Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A A 0m 20 350m Collector Current I C (A) 1 A 0.65 +0.2 -0.1 5.45±0.1 B RL (Ω) m 50 2 3 1.05 +0.2 -0.1 VCC (V) 8 2.0±0.1 ø3.2±0.1 O(50 to100), P(70 to140), Y(90 to180) ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) a 4.8±0.2 b IB Tstg 15.6±0.4 9.6 1.8 Conditions V 5.0±0.2 Unit 160 2.0 Ratings VCBO Symbol External Dimensions MT-100(TO3P) (Ta=25°C) 4.0 ■Electrical Characteristics 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 20 Without Heatsink 0 –0.02 –0.1 –1 Emitter Current I E (A) 108 –8 0.1 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC4468 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1695) 10max µA V IEBO VEB=6V 10max µA V V(BR)CEO 10 A hFE 140min IC=50mA V 50min∗ VCE=4V, IC=3A A VCE(sat) IC=5A, IB=0.5A 0.5max V 100(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 250typ pF –55 to +150 °C 20.0min 4 PC ∗hFE Rank ø3.2±0.1 b IB Tstg a 2 3 O(50 to100), P(70 to140), Y(90 to180) 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 5.45±0.1 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 60 12 5 10 –5 0.5 –0.5 0.24typ 4.32typ 0.40typ 4 20mA 2 I B =10mA 0 0 1 2 3 1 2 I C =10A 0 4 0 0.5 1.0 1.5 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 Typ 100 50 1 5 125˚C 25˚C 100 –30˚C 50 20 0.02 10 Transient Thermal Resistance DC Curr ent Gain h FE 300 0.5 0 1 0.1 Collector Current I C (A) 0.5 1 5 10 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 Base-Emittor Voltage V B E (V) (V C E =4V) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 100 30 3m s 10 100 Collector-Emitter Voltage V C E (V) 200 Collector Curre nt I C ( A) nk 50 si 10 50 at 5 he 0.1 3 ite Without Heatsink Natural Cooling fin Emitter Current I E (A) –10 0.5 In –1 1 ith –0.1 s 0 –0.02 ms 10 10 20 DC 5 0m Typ 10 30 W M aximum Power Dissipa ti on P C (W) 40 Cut- off F req uency f T (M H Z ) DC Cur rent Gain h FE 0 2.0 Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 4 5A Collector-Emitter Voltage V C E (V) 20 0.02 6 (Case 50 mA 2 25˚C 75 m A 6 8 mp) A e Te 100m (V C E =4V) 10 3 Cas Collector Current I C (A) 8 mA ˚C ( 150 125 A Collector Current I C (A) 2 m 00 1.4 E I C – V BE Temperature Characteristics (Typical) θ j - a (˚C /W) 30 A 0m C Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 40 0m A 10 0.65 +0.2 -0.1 5.45±0.1 B I C – V CE Characteristics (Typical) 2.0±0.1 Temp) 6 IC ) VEBO 4.8±0.2 (Case 140 Temp VCEO 15.6±0.4 9.6 –30˚C V 1.8 VCB=200V 200 5.0±0.2 ICBO VCBO 2.0 Unit Symbol External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit 4.0 ■Electrical Characteristics Conditions Ratings 19.9±0.3 Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 109 2SC4495 High hFE LOW VCE (sat) Silicon NPN Triple Diffused Planar Transistor A hFE IB 1 A VCE(sat) PC 25(Tc=25°C) W fT Tj 150 °C COB –55 to +150 °C Tstg µA 50min V VCE=4V, IC=0.5A 500min IC=1A, IB=20mA 0.5max V VCE=12V, IE=–0.1A 40typ MHz VCB=10V,f=1MHz 30typ pF 1.35±0.15 1.35±0.15 IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 20 20 1 10 –5 15 –30 0.45typ 1.60typ 0.85typ 2mA 1 1mA I B =0.5mA 0 0 1 2 3 4 5 0.5 3A 0.5 0 1 10 100 0 0.5 (V C E =4V) 5000 125˚C 25˚C –55˚C 1000 1000 500 1 Transient Thermal Resistance D C Cur r ent Gai n h FE Typ 500 100 50 20 0.01 3 0.1 Collector Current I C (A) 1.5 θ j-a – t Characteristics 0.5 1 3 7 5 1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 1 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 3000 DC Cur rent Gain h FE 0 1000 Base Current I B (mA) (V C E =4V) 0.5 1 2A 6 h FE – I C Characteristics (Typical) 0.1 1.5 I C =1A Collector-Emitter Voltage V C E (V) 100 0.01 2 Tem p) mp) 3mA 1 se 5m A (Ca 2 2.5 ˚C Collector Current I C (A) 8mA 125 A (V CE =4V) 3 1.5 Collector Current I C (A) 12m I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) 1 A 8m Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 A 2.4±0.2 2.2±0.2 RL (Ω) 0m 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 VCC (V) 3 ø3.3±0.2 a b ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 4.0±0.2 3 10max 4.2±0.2 2.8 c0.5 0.8±0.2 IC VEB=6V IC=25mA 10.1±0.2 ±0.2 V(BR)CEO µA 3.9 IEBO V Unit 10max Temp) V 6 Ratings VCB=80V (Case 50 VEBO Conditions –55˚C VCEO Symbol e Te ICBO (Cas V 25˚C Unit 80 16.9±0.3 Ratings VCBO Symbol External Dimensions FM20(TO220F) (Ta=25°C) 8.4±0.2 ■Electrical Characteristics 13.0min ■Absolute maximum ratings (Ta=25°C) Application : Audio Temperature Compensation and General Purpose Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 1m 10 40 m s s 20 DC 0m Collect or Cur ren t I C (A) Typ s 10 Cu t-off Fre quen cy f T ( MH Z ) 5 M aximum Power Dissipa tion P C (W) 10 60 1 0.5 Without Heatsink Natural Cooling 0.1 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 20 W ith In 150x150x2 1 00x 1 0 10 0x 2 fin ite he at si nk 50x50x2 Without Heatsink 2 0 –0.005 –0.01 0.05 –0.1 Emitter Current I E (A) 110 –1 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC4511 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1725) V(BR)CEO IC 6 A hFE VEB=6V 10max µA IC=25mA 80min V VCE=4V, IC=2A 50min∗ 10.1±0.2 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 30(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 110typ pF –55 to +150 °C ∗hFE Rank Tstg 1.35±0.15 1.35±0.15 O(50 to100), P(70 to140), Y(90 to180) 0.3 I C – V CE Characteristics (Typical) 1 m 00 A A 80m Collector Current I C (A) 5 50 mA 4 3 30mA 2 20mA I B =10mA 1 0 0 1 2 3 0.34typ I C – V BE Temperature Characteristics (Typical) 2 1 2A 0 0 0.5 1.0 (V C E =4V) 200 Typ 50 1 100 25˚C –30˚C 50 20 0.02 56 Transient Thermal Resistance DC Cur rent Gain h FE 125˚C 0.1 Collector Current I C (A) 1 0.5 2 θ j-a – t Characteristics 1 56 5 1 0.5 0.4 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 20 10 10 si nk 0.1 at Without Heatsink Natural Cooling he 0.5 ite 1 20 fin Collector Curre nt I C ( A) s In 10 0m ith 20 DC W Typ s 10 5 30 m M aximum Power Dissipa ti on P C (W) 40 Cu t-off Fre quen cy f T (M H Z ) DC Curr ent Gain h F E 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 300 0.5 0 1.5 Base Current I B (A) (V C E =4V) 0.1 2 I C =6A 4 h FE – I C Characteristics (Typical) 30 0.02 4 4A Collector-Emitter Voltage V C E (V) 100 (V CE =4V) 6 3 ˚C ( A 2.60typ B C E 125 15 0m Collector-Emitter Saturation Voltage V C E (s at) (V ) 20 A 0.16typ –0.3 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) tstg (µs) V CE ( sat ) – I B Characteristics (Typical) 6 0m ton (µs) IB2 (A) Cas e Te mp (Cas e Tem ) p) –5 10 3 IB1 (A) Collector Current I C (A) 10 30 VBB2 (V) VBB1 (V) IC (A) 2.4±0.2 2.2±0.2 θ j- a ( ˚C/W) RL (Ω) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) ø3.3±0.2 a b 13.0min IB 4.2±0.2 2.8 c0.5 4.0±0.2 IEBO V µA 0.8±0.2 V 6 10max ±0.2 80 VEBO Unit VCB=120V ) VCEO Conditions Temp ICBO (Case V –30˚C Unit 120 25˚C Ratings VCBO Symbol External Dimensions FM20(TO220F) (Ta=25°C) Ratings 3.9 Symbol 8.4±0.2 ■Electrical Characteristics 16.9±0.3 ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 10 Without Heatsink 2 0 –0.02 –0.1 –1 Emitter Current I E (A) –6 0.05 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 111 2SC4512 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1726) Conditions Ratings Unit V ICBO VCB=120V 10max µA VCEO 80 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC=25mA 80min V IC 6 A hFE VCE=4V, IC=2A 50min 10.2±0.2 3 A VCE(sat) IC=5A, IB=0.2A 0.5max V PC 50(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 110typ pF –55 to +150 °C ∗hFE Rank 2.5 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 30 10 3 10 –5 0.3 –0.3 0.16typ 2.60typ 0.34typ I B =10mA 0 0 1 2 3 1 I C =6A 2A 0 4 0 0.5 1.0 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 300 200 Typ 50 0.5 1 100 25˚C –30˚C 50 20 0.02 56 Transient Thermal Resistance DC Cur rent Gain h FE DC Curr ent Gain h F E 125˚C 0.1 0 1 0.1 Collector Current I C (A) 0.5 1 56 θ j-a – t Characteristics 5 1 0.5 0.4 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 Base-Emittor Voltage V B E (V) (V C E =4V) 30 0.02 0 1.5 Base Current I B (A) h FE – I C Characteristics (Typical) ) 4A Collector-Emitter Voltage V C E (V) 100 2 Temp 20mA 2 4 (Case 30mA 2 –30˚C 50 mA 4 (V CE =4V) 6 3 Cas e Te mp (Cas e Tem ) p) A 80m ˚C ( A 125 1 m 00 Collector Current I C (A) A I C – V BE Temperature Characteristics (Typical) θ j - a (˚ C/W) 15 0m 1.4 Weight : Approx 2.6g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) 20 A 2.5 B C E VCC (V) 0m 1.35 0.65 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 6 b O(50 to100), P(70 to140), Y(90 to180) I C – V CE Characteristics (Typical) 2.0±0.1 ø3.75±0.2 a 25˚C Tstg 12.0min IB 4.8±0.2 3.0±0.2 Unit 120 16.0±0.7 Ratings VCBO Symbol External Dimensions MT-25(TO220) (Ta=25°C) 8.8±0.2 Symbol ■Electrical Characteristics 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 20 50 10 100ms 5 m s –0.1 –1 Emitter Current I E (A) 112 –6 0.05 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 nk 0 –0.02 si 0.1 at Without Heatsink Natural Cooling he 0.5 30 ite 10 1 fin 20 40 In Typ DC ith Collector Curre nt I C ( A) 30 W Cu t-off Fre quen cy f T (M H Z ) 10 Ma xim um Powe r Dissipation P C (W) 40 20 10 2 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC4517/4517A Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) V ICBO VCB=800V 100max µA VEB=7V 100max µA IC=10mA 550min V hFE VCE=4V, IC=1A 10 to 30 VCEO 550 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A IC 2SC4517 2SC4517A 10.1±0.2 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.25A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 35typ pF Tstg 3.9 V 1.35±0.15 1.35±0.15 1 250 –5 10 0m 300mA Collector Current I C (A) 200 mA 150 mA 2 100m A 1 0 I B =40mA 0 1 2 3 4max 0.7max tf (µs) 0.5max 1.0 V B E (sat) 0.5 0.5 1 0 5 7 5 t o n• t s tg • t f (µ s) –55˚C 10 1 3 t s tg V C C 250V I C :I B 1 :I B2 =1:0.15:–0.45 1 tf 0.5 t on 0.1 0.2 0.5 1 3 0.5 0.3 P c – T a Derating 30 5 500 1000 100 500 Collector-Emitter Voltage V C E (V) 1000 nk 100 2SC4517A si 50 0.01 50 at 0.05 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% he 0.1 20 ite Collecto r Cur rent I C (A) 1 0.5 2SC4517 Collector-Emitter Voltage V C E (V) 1000 fin Without Heatsink Natural Cooling 100 In 0.1 10 10 ith 1 5 1 Time t(ms) s 0.5 1.0 W Co lle ctor Cu rren t I C (A) 0µ µs 0.8 1 Maxim um Power Dissi pation P C (W) 50 0.6 4 10 10 0.01 2 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.2 Collector Current I C (A) Collector Current I C (A) 0.05 Transient Thermal Resistance 25˚C Switching Ti me DC Cur rent Gain h FE 125˚C 5 0 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 50 0.5 1 V C E (sat) 0.1 (V C E =4V) 0.1 2 Collector Current I C (A) h FE – I C Temperature Characteristics (Typical) 0.05 (V CE =4V) 3 I C /I B =5 Const. Collector-Emitter Voltage V C E (V) 5 0.02 I C – V BE Temperature Characteristics (Typical) 1.5 0 0.03 0.05 4 Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) A Collector-Emitter Saturation Voltage V C E (sa t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 40 tstg (µs) ton (µs) –0.45 0.15 I C – V CE Characteristics (Typical) 3 IB2 (A) Collector Current I C (A) 250 2.4±0.2 2.2±0.2 IB1 (A) VBB2 (V) VBB1 (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 θ j - a (˚ C/W) IC (A) RL (Ω) ø3.3±0.2 a b ■Typical Switching Characteristics (Common Emitter) VCC (V) 4.2±0.2 2.8 c0.5 4.0±0.2 1000 Unit 0.8±0.2 900 Conditions ±0.2 2SC4517 2SC4517A VCBO External Dimensions FM20(TO220F) Ratings Symbol Unit 8.4±0.2 Ratings (Ta=25°C) 16.9±0.3 Symbol Application : Switching Regulator and General Purpose ■Electrical Characteristics (Ta=25°C) 13.0min ■Absolute maximum ratings 10 Without Heatsink 2 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 113 2SC4518/4518A Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose Conditions V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEBO 7 V V(BR)CEO 5(Pulse10) A hFE IC 2SC4518 2SC4518A VEB=7V 100max µA IC=10mA 550min V VCE=4V, IC=1.8A 10 to 25 2.5 A VCE(sat) IC=1.8A, IB=0.36A 0.5max PC 35(Tc=25°C) W VBE(sat) IC=1.8A, IB=0.36A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.35A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF 3.9 V 1.35±0.15 1.35±0.15 –5 10 1.8 0.27 I C – V CE Characteristics (Typical) 0 70 600mA mA 400 mA Collector Current I C (A) 4 250 mA 3 150 mA 2 I B =50mA 1 0 1 0 2 3 0.7max –0.9 0.5max 4max 1.0 V B E (sat) 0.5 0.5 1 5 0 10 1 5 1 tf 0.5 t on 0.1 0.2 0.5 1.0 1.2 5 1 0.5 0.3 1 10 100 1000 Time t(ms) P c – T a Derating 35 nk Collector Curr ent I C ( A) si 1000 at 500 Collector-Emitter Voltage V C E (V) 10 Without Heatsink 0.05 0.03 50 20 he 0.1 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% ite Without Heatsink Natural Cooling 0.5 fin 0.5 1 In 1 30 ith M aximum Power Dissip ation P C (W) s W Collecto r Curr ent I C (A) 1 5 100 0.8 10 5 50 0.6 4 20 0µ 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area 20 10 0.2 Collector Current I C (A) Safe Operating Area (Single Pulse) 114 t s tg V C C 250V I C :I B 1 :I B 2 =1:0.15:–0.5 Collector Current I C (A) 10 0 Base-Emittor Voltage V B E (V) Transient Thermal Resistance –55˚C 0.05 0.03 10 2 10 7 5 t on• t s t g • t f (µs) 25˚C Swi tchi ng T im e DC Cur rent Gain h F E 125˚C 0.1 3 V C E (sat) 0.1 t on •t stg • t f – I C Characteristics (Typical) 50 0.5 4 1 (V C E =4V) 0.1 (V CE =4V) 5 Collector Current I C (A) h FE – I C Temperature Characteristics (Typical) 0.05 I C – V BE Temperature Characteristics (Typical) I C /I B =5 Const. Collector-Emitter Voltage V C E (V) 5 0.02 B C E 1.5 0 0.03 0.05 4 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) tstg (µs) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at ) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 5 ton (µs) IB2 (A) Collector Current I C (A) 139 250 2.4±0.2 2.2±0.2 IB1 (A) VBB2 (V) VBB1 (V) IC (A) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 θ j - a (˚C /W) RL (Ω) ø3.3±0.2 a b ■Typical Switching Characteristics (Common Emitter) VCC (V) 4.2±0.2 2.8 c0.5 4.0±0.2 10.1±0.2 IB Tstg External Dimensions FM20(TO220F) Unit 0.8±0.2 1000 Ratings Symbol Unit ±0.2 900 (Ta=25°C) 8.4±0.2 VCBO ■Electrical Characteristics 16.9±0.3 Ratings Symbol 2SC4518 2SC4518A 13.0min ■Absolute maximum ratings (Ta=25°C) 2SC4518 100 500 Collector-Emitter Voltage V C E (V) 2SC4518A 1000 2 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC4546 Silicon NPN Triple Diffused Planar Transistor (High Voltage and Ultra-high Speed Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A 0.7max IC=3A, IB=0.6A 1.3max V 16.9±0.3 100max V 30(Tc=25°C) W VBE(sat) Tj 150 °C fT VCE=12V, IE=–0.5A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 55typ pF 3.9 PC Tstg –5 4 200m A 3 2 I B =50m A 1 1 0 2 3 I C / I B =5 Const. 6 0.5 125˚C (Case Temp) 25˚C (Case Temp) 0 0.02 4 0.05 0.1 0.5 1 5 0 10 1 5 7 t s tg 1 0.5 tf t on 0.1 0.05 V C C 200V I C :I B1 :I B 2 =5:1:–2 0.02 0.2 0.5 5 1 0.5 0.3 1 10 P c – T a Derating 5 ite he at si nk Co lle ctor Cu rren t I C ( A) fin Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than 1% 20 In Without Heatsink Natural Cooling 1 ith Ma xim um Powe r Dissipat io n P C (W) 10 0.5 1000 30 s 1 100 Time t(ms) W Collector Cur rent I C (A) 0µ 5 0.5 1 4 20 20 1.0 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.5 Collector Current I C (A) Collector Current I C (A) 10 0 Base-Emittor Voltage V B E (V) Transient Thermal Resistance t o n• t s t g• t f (µ s) Sw it ching Time DC C urrent G ain h FE 25˚C –30˚C 0.5 2 10 t on •t stg • t f – I C Characteristics (Typical) 2 125˚C 0.1 3 Collector Current I C (A) (V C E =4V) 0.05 4 1 h FE – I C Temperature Characteristics (Typical) 5 0.02 5 –30˚C (Case Temp) Collector-Emitter Voltage V C E (V) 50 (V C E =4V) 7 1.0 p) 300 mA 0 I C – V BE Temperature Characteristics (Typical) Tem 40 0m A 5 0.15max (Ca Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s a t) (V ) 60 0m A 6 2max 0.5max V CE ( sat ) – I C Characteristics (Typical) 800mA 1A 2.4±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. B C E se I C – V CE Characteristics (Typical) 7 –1.2 0.6 tf (µs) ˚C 10 tstg (µs) ton (µs) 125 3 67 IB2 (A) IB1 (A) Collector Current I C (A) 200 VBB2 (V) VBB1 (V) 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 θ j- a ( ˚ C/W) IC (A) RL (Ω) 1.35±0.15 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) ø3.3±0.2 a b ) IC VEB=7V IC=25mA Temp V(BR)CEO 4.2±0.2 2.8 c0.5 (Case IEBO V 10.1±0.2 4.0±0.2 V 7 µA 0.8±0.2 400 VEBO 100max –30˚C VCEO VCB=600V mp) ICBO e Te V Unit (Cas 600 Ratings 25˚C VCBO External Dimensions FM20(TO220F) (Ta=25°C) Conditions ±0.2 Symbol Unit 8.4±0.2 ■Electrical Characteristics Ratings Symbol 13.0min ■Absolute maximum ratings (Ta=25°C) 10 Without Heatsink 2 0.1 10 50 100 Collector-Emitter Voltage V C E (V) 500 700 0.1 10 50 100 Collector-Emitter Voltage V C E (V) 500 700 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 115 2SC4557 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Unit VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 28 A VCE(sat) IC=5A, IB=1A 0.5max 80(Tc=25°C) W VBE(sat) IC=5A, IB=1A 1.2max V Tj 150 °C fT VCE=12V, IE=–1A 6typ MHz °C COB VCB=10V, f=1MHz 105typ 3.3 1.75 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 5.45±0.1 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 250 50 5 10 –5 0.75 –1.5 1max 5max 0.5max 0 0 1 2 3 ase 125˚C (C V C E (sat) 0.05 0.1 Collector-Emitter Voltage V C E (V) 0.5 Te m –5 5 1 0 10 t on •t stg • t f – I C Characteristics (Typical) 10 0.1 0.5 1 5 10 t s tg 5 V C C 250V I C :I B1 :–I B2 =10:1.5:3 1 0.5 t on tf 0.1 0.2 0.5 20 1 5 10 1 0.5 0.1 1 10 P c – T a Derating he 40 at si nk Ma xim um Powe r Dissipat io n P C (W) ite Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 60 fin Collect or Cur re nt I C (A) 1000 In 1 0.5 100 ith 5 Without Heatsink Natural Cooling 1.2 80 10 1 1.0 Time t(ms) s 5 0.8 W Collector Cur rent I C (A) 0µ 0.6 θ j-a – t Characteristics 20 10 0.4 2 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.2 Collector Current I C (A) Collector Current I C (A) 0.5 Transient Thermal Resistance t o n• t s t g• t f (µ s) –5 5˚ C Sw it ching Time DC C urrent G ain h FE 25 ˚C 0.05 0 Base-Emittor Voltage V B E (V) 10 125˚ C Temp) 5˚C (V C E =4V) 50 ) p) Collector Current I C (A) h FE – I C Temperature Characteristics (Typical) 5 0.02 p) 25˚C 2 0 0.02 4 4 (Case I B =100mA 2 –55˚C (Case Temp) Temp) 25˚C (Case p) ase Tem 125˚C (C 6 em 200mA 4 V B E (sat) 1 8 eT 400m A 6 (V CE =4V) 10 2 Cas Collector Current I C (A) 600 mA E ˚C ( 80 0m A 8 C Weight : Approx 2.0g a. Part No. b. Lot No. 125 1A Collector Current I C (A) A 3.35 1.5 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) θ j- a (˚ C/W) 1.2 4.4 B V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 10 0.65 +0.2 -0.1 5.45±0.1 1.5 I C – V CE Characteristics (Typical) 0.8 2.15 –55˚C –55 to +150 pF Temp Tstg 3.0 5 PC 3.45 ±0.2 ø3.3±0.2 a b V IB 5.5±0.2 (Case IC 15.6±0.2 25˚C VEBO 0.8±0.2 Ratings ICBO 5.5 Conditions V 1.6 Unit 900 23.0±0.3 Ratings VCBO Symbol External Dimensions FM100(TO3PF) (Ta=25°C) 9.5±0.2 Symbol ■Electrical Characteristics 16.2 ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 20 Without Heatsink 0.1 10 50 100 500 Collector-Emitter Voltage V C E (V) 116 1000 0.1 10 50 100 500 Collector-Emitter Voltage V C E (V) 1000 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC4662 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=1.5A 10 to 30 IB 2 A VCE(sat) IC=1.5A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=1.5A, IB=0.3A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.3A 20typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 30typ pF 3.9 V –0.3 0.15 2.5max 1max 0.5max I C – V BE Temperature Characteristics (Typical) (I C /I B =5) (V C E =4V) 5 2 Collector Current I C (A) mp) p) ase Tem p) Temp) Te 25˚C (Case 125˚C (C C 125˚ V C E (sat) 0 0.01 0.05 em –55˚C (Case 3 2 eT V B E (sat) Cas –55˚C 1 4 ) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 0.1 0.5 (C 1 as 1 25˚C 0 5 0 0.2 –55˚C 10 5 0.01 0.05 0.1 0.5 1 5 θ j - a ( ˚ C/W) V C C 200V I C :I B 1 :I B2 =10:1:–2 t s tg 1 0.5 t on tf 0.1 0.1 0.5 1 3 0.5 0.4 10 10 ite he at si nk Collect or Cur re nt I C (A) fin Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than 1% 20 In 1 0.5 1000 ith 5 Without Heatsink Natural Cooling 100 P c – T a Derating Ma xim um Powe r Dissipat io n P C (W) s 1 0.5 1 W 5 0µ 1.4 30 10 10 1.2 Time t(ms) 20 20 1.0 1 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 0.8 5 Collector Current I C (A) Collector Current I C (A) Collector Cur rent I C (A) Transient Thermal Resistance t o n• t s t g• t f (µ s) 25˚C Sw it ching Time DC C urrent G ain h FE 3 125˚C 0.6 θ j-a – t Characteristics t on •t stg • t f – I C Characteristics (Typical) (V C E =4V) 50 0.4 Base-Emittor Voltage V B E (V) Collector Current I C (A) h FE – I C Temperature Characteristics (Typical) Weight : Approx 2.0g a. Part No. b. Lot No. B C E ˚C ( I C – V CE Characteristics (Typical) tf (µs) 125 –5 10 tstg (µs) ton (µs) mp 1.5 133 IB2 (A) IB1 (A) Te 200 VBB2 (V) VBB1 (V) 2.4±0.2 2.2±0.2 e IC (A) RL (Ω) 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) 1.35±0.15 ) Tstg ø3.3±0.2 a b Temp A (Case 5(Pulse10) IC mp) V –55˚C V 10 e Te 400 VEBO 4.2±0.2 2.8 c0.5 (Cas VCEO 10.1±0.2 25˚C ICBO 4.0±0.2 100max V 0.8±0.2 VCB=500V 500 ±0.2 Unit 16.9±0.3 Ratings VCBO External Dimensions FM20(TO220F) (Ta=25°C) Conditions Symbol Unit 8.4±0.2 ■Electrical Characteristics Ratings Symbol 13.0min ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 10 Without Heatsink 2 0.1 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 0.1 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 117 2SC4706 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) 100max µA VCEO 600 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 600min V 14(Pulse28) A hFE VCE=4V, IC=7A 10 to 25 IB 7 A VCE(sat) IC=7A, IB=1.4A 0.5max PC 130(Tc=25°C) W VBE(sat) IC=7A, IB=1.4A 1.2max V Tj 150 °C fT VCE=12V, IE=–1.5A 6typ MHz –55to+150 °C COB VCB=10V, f=1MHz 160typ pF VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 250 35.7 7 10 –5 1.05 –3.5 1max 5max 0.7max I B =100mA 2 0 1 0 2 3 2 Temp V C E (sat) 0.05 0.1 Collector-Emitter Voltage V C E (V) 0.5 1 5 0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-Emittor Voltage V B E (V) Collector Current I C (A) h FE – I C Temperature Characteristics (Typical) ) ) 4 0 0.02 4 6 (Case 200mA 4 V B E (sat) 8 –55˚C 6 1 mp) 400m A emp 8 10 eT 600mA 12 Cas 10 I C /I B =5 Const. ˚C ( 800mA (V CE =4V) 14 2 125 12 1.4 E I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) 1.2 A C Weight : Approx 6.0g a. Part No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) A 0.65 +0.2 -0.1 5.45±0.1 B IC (A) 6 1. Collector Current I C (A) 5.45±0.1 RL (Ω) 14 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.2±0.1 b V VCC (V) 2.0±0.1 e Te Tstg a 4.8±0.2 (Cas IC 25˚C VEBO 15.6±0.4 9.6 1.8 Unit VCB=800V 5.0±0.2 Ratings ICBO 2.0 Conditions V 4.0 Unit 900 19.9±0.3 Ratings VCBO Symbol External Dimensions MT-100(TO3P) (Ta=25°C) 4.0max Symbol ■Electrical Characteristics 20.0min ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose θ j-a – t Characteristics t on •t stg • t f – I C Characteristics (Typical) (V C E =4V) 8 t o n• t s t g• t f (µ s) 50 25˚C Sw it ching Time –55˚C 10 5 0.02 0.05 0.1 0.5 1 5 10 14 5 V C C 250V I C :I B1 :–I B2 =10:1.5:5 1 t on 0.5 tf 0.1 0.2 0.5 10 0µ 14 P c – T a Derating 130 s 500 Collector-Emitter Voltage V C E (V) 1000 Collector Curr ent I C (A) nk 100 si 0.1 50 at Collector-Emitter Voltage V C E (V) 1000 he 500 ite 100 fin 50 0.5 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% In Without Heatsink Natural Cooling 1 ith 1 5 100 W 10 10 Collector Cur rent I C (A) 10 50 50 118 5 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 0.1 10 1 Collector Current I C (A) Collector Current I C (A) 0.5 t s tg Ma xim um Powe r Dissipat io n P C (W) DC C urrent G ain h FE 125˚C 50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC4883/4883A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A) Application : Audio Output Driver and TV Velocity-modulation ■Absolute maximum ratings (Ta=25°C) (Ta=25°C) IC 2 A V(BR)CEO 180min 150min IC=10mA IB 1 A hFE VCE=10V, IC=0.7A PC 20(Tc=25°C) W VCE(sat) IC=0.7A, IB=70mA 1.0max Tj 150 °C fT VCE=12V, IE=–0.7A 120typ –55 to +150 °C COB VCB=10V, f=1MHz 30typ Tstg V µA 10max VEB=6V V 60 to 240 V MHz pF 1.35±0.15 1.35±0.15 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 20 20 1 10 –5 100 –100 0.5typ 1.5typ 0.5typ 0 2 0 4 6 8 1 2 Collector-Emitter Voltage V C E (V) 5 10 50 100 500 (V C E =4V) 100 125˚C Transient Thermal Resistance DC Curr ent Gain h FE 300 Typ 25˚C 100 –55˚C 50 50 0.5 1 30 0.01 2 Collector Current I C (A) 0.05 1.0 0.1 1 0.5 2 7 5 1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 20 5 5 10 50 100 Collector-Emitter Voltage V C E (V) 2 200 Collect or Cur ren t I C (A) nk 1 si –2 10 at Emitter Current I E (A) –1 he 1 0.01 –0.1 ite 20 fin Without Heatsink Natural Cooling 1.2SC4883 2.2SC4883A 0.5 In 0.1 ith 0.5 W 40 s 60 s 80 C 0m 100 ms D 1 10 Typ 120 0 –0.01 1m 10 140 Ma xim um Powe r Dissipat io n P C (W) 160 Cut-o ff Fr equ ency f T (M H Z ) DC Curr ent Gain h FE 0.5 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 300 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 0 1000 Base Current I B (mA) h FE – I C Characteristics (Typical) 40 0.01 ) I C =2A 1A 0.5A 0 10 1 emp I B =5mA eT 1 2 Cas A ˚C ( 10m 125 A (V C E =4V) 2 3 Collector Current I C (A) A 15m I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚ C/W) 30m Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (sa t) (V ) 2 Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) 60mA 2.4±0.2 2.2±0.2 VCC (V) 100mA 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.3±0.2 a b Temp) IEBO (Case V –55˚C 6 180 150 VCB= VEBO 4.0±0.2 ICBO 0.8±0.2 V ±0.2 180 4.2±0.2 2.8 c0.5 mp) 150 3.9 VCEO 10.1±0.2 µA 10max e Te V (Cas 180 External Dimensions FM20(TO220F) Unit 25˚C 150 Ratings 2SC4883 2SC4883A Conditions 8.4±0.2 VCBO Symbol 16.9±0.3 2SC4883 2SC4883A Unit 13.0min Ratings Symbol ■Electrical Characteristics 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 119 2SC4886 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1860) A hFE µA 150min V VCE=4V, IC=5A 50min∗ 3 A VCE(sat) IC=5A, IB=500mA 2.0max V PC 80(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 200typ pF °C ∗hFE Rank –55 to +150 16.2 1.05 +0.2 -0.1 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 60 12 5 10 –5 0.5 –0.5 0.26typ 1.5typ 0.35typ I B =20mA 0 1 0 2 3 0 4 0 0.2 0.4 0.6 0.8 (V C E =4V) 200 Typ 50 5 100 25˚C –30˚C 50 20 0.02 10 14 Transient Thermal Resistance DC Cur rent Gain h FE 0.1 Collector Current I C (A) 0.5 1 5 0.5 0.1 1 10 80 1m Typ 10 10 5 40 at si nk Without Heatsink Natural Cooling he 0.5 ite 1 60 fin Co lle ctor Cu rre nt I C (A) s In 20 m s ith 40 DC 10 0m s W 60 20 0.1 0 –0.02 –1 Emitter Current I E (A) 120 Without Heatsink 0.05 –0.1 –10 1000 2000 P c – T a Derating 40 80 100 Time t(ms) Safe Operating Area (Single Pulse) (V C E =12V) Cut-o ff F requ ency f T (MH Z ) 10 14 1 Collector Current I C (A) f T – I E Characteristics (Typical) 2 3 M aximum Power Dissipa ti on P C (W) DC Curr ent Gain h F E 125˚C 1 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 200 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 20 0.02 p) I C =10A 5A Collector-Emitter Voltage V C E (V) 100 5 em 1 eT 50m A 5 10 as 10 0m A 2 (C A 5˚C 150m E (V C E =4V) 12 A C Weight : Approx 6.5g a. Part No. b. Lot No. 14 3 θ j - a ( ˚ C/W) Collector Current I C (A) 200m 10 3.35 1.5 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) A 300m 4.4 B V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 0m A 75 400m 0.65 +0.2 -0.1 5.45±0.1 1.5 RL (Ω) I C – V CE Characteristics (Typical) 0.8 2.15 5.45±0.1 VCC (V) A 0m 60 0mA 50 1.75 O(50 to 100), P(70 to 140), Y(90 to 180) ■Typical Switching Characteristics (Common Emitter) 14 ø3.3±0.2 a b 3.0 IB Tstg 0.8±0.2 14 100max 3.45 ±0.2 5.5 IC VEB=5V IC=25mA 5.5±0.2 1.6 V(BR)CEO 15.6±0.2 p) IEBO V µA Tem V 5 Unit 100max se 150 VEBO Ratings VCB=150V (Ca VCEO Conditions ˚C ICBO –30 V ˚C Unit 150 3.3 Symbol Ratings VCBO External Dimensions FM100(TO3PF) (Ta=25°C) 25 Symbol ■Electrical Characteristics 23.0±0.3 ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 9.5±0.2 LAPT 2 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 150 3.5 0 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150 2SC4907 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) mA VEB=10V 100max µA IC=25mA 500min V VCEO 500 V IEBO VEBO 10 V V(BR)CEO 6(Pulse12) A hFE VCE=4V, IC=2A 10to30 IB 2 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.5A 8typ MHz °C COB VCB=10V, f=1MHz 45typ pF 3.9 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 100 2 10 –5 0.2 –0.4 1max 4.5max 0.5max 0 0 1 2 3 (C 125˚C V C E (sat) 0 0.02 4 Collector-Emitter Voltage V C E (V) 0.05 0.1 0.5 ase Te 1 10 1 5 6 1 0.5 t on tf 0.1 0.2 0.5 0.4 1 5 6 0.3 1 mp) e Te (Cas 10 100 1000 P c – T a Derating he at si nk M aximum Power Dissipa ti on P C ( W) ite Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than 1% 20 fin Collect or Cur re nt I C (A) ) 0.5 In 1 0.5 emp 1 ith Without Heatsink Natural Cooling 1.4 30 5 1 1. 2 W 5 1.0 Time t(ms) 10 s 0.8 4 20 0µ 0.6 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.2 Collector Current I C (A) 20 Collect or Cur ren t I C (A) t s tg V C C 200V I C :I B 1 :I B2 =10:1:–2 Collector Current I C (A) 0.5 Transient Thermal Resistance –55˚C 10 0 Base-Emittor Voltage V B E (V) 7 5 t o n• t s t g• t f (µ s) 25˚C Sw it ching Time DC C urrent G ain h FE 125˚C 0.5 ) 0 5 t on •t stg • t f – I C Characteristics (Typical) 50 0.1 Te 1 C 5˚ –5 (V C E =4V) 0.05 mp m Collector Current I C (A) h FE – I C Characteristics (Typical) 5 0.02 2 –55˚C 1 25˚C 3 se I B =100mA p) –55˚C (Case Tem Temp) 25˚C (Case Temp) (Case 125˚C (Ca 2 1 4 ˚C 200mA θ j - a ( ˚ C/W) 3 V B E (sat) 125 300m A 5 Collector Current I C (A) 400m A 4 (V C E =4V) 6 p) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 600m A 5 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) 2 Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 80 0m A 1A 2.4±0.2 2.2±0.2 VCC (V) 6 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 1.35±0.15 se T –55 to +150 V (Ca Tstg 4.2±0.2 2.8 c0.5 ø3.3±0.2 a b 25˚C IC 10.1±0.2 4.0±0.2 Unit 1max ICBO 0.8±0.2 Ratings VCB=600V V ±0.2 Conditions Unit 600 16.9±0.3 Symbol Ratings VCBO Symbol External Dimensions FM20(TO220F) (Ta=25°C) 8.4±0.2 ■Electrical Characteristics 13.0min ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 10 Without Heatsink 2 0.1 10 50 100 500 Collector-Emitter Voltage V C E (V) 1000 0.1 10 50 100 500 Collector-Emitter Voltage V C E (V) 1000 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 121 2SC4908 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) VCEO 800 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A hFE IC Symbol Conditions Ratings Unit VCB=800V 100max µA VEB=7V 100max µA IC=10mA 800min V VCE=4V, IC=0.7A 10 to 30 10.1±0.2 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 35(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.3A 6typ MHz °C COB VCB=10V, f=1MHz 40typ pF Tstg –55 to +150 IC (A) RL (Ω) 250 0.7 357 VBB2 (V) VBB1 (V) 3.9 V 1.35±0.15 1.35±0.15 2.4±0.2 2.2±0.2 IB2 (A) tstg (µs) ton (µs) –0.35 0.1 I C – V CE Characteristics (Typical) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 IB1 (A) –5 10 ø3.3±0.2 a b ■Typical Switching Characteristics (Common Emitter) VCC (V) 4.2±0.2 2.8 c0.5 4.0±0.2 ICBO 0.8±0.2 V ±0.2 900 16.9±0.3 Unit VCBO External Dimensions FM20(TO220F) (Ta=25°C) 13.0min Ratings 8.4±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol Application : Switching Regulator and General Purpose 5max 1max tf (µs) Weight : Approx 2.0g a. Part No. b. Lot No. B C E 1max I C – V BE Temperature Characteristics (Typical) 0 0 1 2 3 0.1 Collector-Emitter Voltage V C E (V) 0.5 1 5 t on• t s t g • t f (µs) –30˚C 10 5 0.5 1 3 t s tg V C C 250V I C :I B 1 :I B2 =2:0.3:–1 1 tf 0.5 t on 0.2 0.1 0.5 1 3 0.3 10 p) ase Tem 1000 fin ite 20 he at si nk M aximum Power Dissipa ti on P C (W) In Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% ith 1 W Collector Curr ent I C (A) 30 0.5 100 P c – T a Derating 5 Without Heatsink Natural Cooling 1.2 Time t(ms) 5 0.5 mp) mp) 1 35 1 1.0 0.5 10 s 0.8 1 10 0µ 0.6 4 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.4 Collector Current I C (A) Collector Current I C (A) Collector Curr ent I C ( A) Transient Thermal Resistance 25˚C Swi tchi ng T im e D C Cur r ent Gai n h F E 125˚C 0.1 0.2 θ j-a – t Characteristics t on •t stg • t f – I C Characteristics (Typical) 50 0.05 0 Base-Emittor Voltage V B E (V) (V C E =4V) 2 0.02 e Te 0 5 Collector Current I C (A) h FE – I C Characteristics (Typical) ase Te V C E (sat) 0 0.03 0.05 4 1 –30˚C (C I B =20mA V B E (sat) (Cas 60mA 1 1 2 25˚C (C 140mA 125˚C 200m A 2 I C /I B =5 Const, θ j - a (˚C /W) Collector Current I C (A) 300m A (V C E =4V) 3 2 Collector Current I C (A) 400 mA 50 3 Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 0m A V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 10 Without Heatsink 0.1 50 100 500 Collector-Emitter Voltage V C E (V) 122 1000 0.1 50 100 500 Collector-Emitter Voltage V C E (V) 1000 2 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC5002 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) V 7(Pulse14) A IB 3.5 A PC 80(Tc=25°C) W Tj 150 °C –55 to +150 °C Tstg 0.8±0.2 5.5 ø3.3±0.2 a b 3.0 6 IC V V MHz pF 1.75 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) –5 I C – V CE Characteristics (Typical) Collector Current I C (A) 6 700 mA 5 4 400 mA 3 200m A 2 I B =100 mA 1 0 1 0 2 3 I C – V BE Temperature Characteristics (Typical) (I C : I B =5 :1) 6 2 1 0 0.02 4 0.1 Collector-Emi tter Voltage V C E (V) 0.5 1 5 0 20 –3 0˚ C 5 0.1 0.5 1 5 7 10 . V C C =200V . I C : I B 1 : –I B 2 =5 :1: 2 t stg Transient Thermal Resistance t s t g • t f (µ s) 25˚ C Swi tchi ng T im e DC C urrent G ain h FE 125˚C 0.05 0 5 tf 1 0.5 0.1 0.2 0.5 0.5 1 5 7 3 1 0.5 0.1 1 10 1000 2000 P c – T a Derating 20 20 100 Time t(ms) Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 1.5 θ j-a – t Characteristics Collector Current I C (A) Collector Current I C (A) 1.0 Base-Emittor Voltage V B E (V) t stg •t f – I C Characteristics (Typical) 100 2 0.02 2 10 (V C E =5V) 10 4 Collector Current I C (A) h FE – I C Characteristics (Typical) 50 (V CE =5V) 7 3 mp) 1. 2A E e Te A C 125˚C 1.5 0.2max VCE(sat)–IC Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) 7 4.0max –1.6 0.8 Weight : Approx 6.5g a. Part No. b. Lot No. tf (µs) B 3.35 1.5 (Cas 10 4.4 25˚C (C 4 50 tstg (µs) IB2 (A) IB1 (A) Collector Current I C (A) 200 VBB2 (V) VBB1 (V) 0.65 +0.2 -0.1 5.45±0.1 1.5 θ j- a (˚ C/W) IC (A) RL (Ω) 0.8 2.15 5.45±0.1 VCC (V) 3.45 ±0.2 1.6 VEBO 5.5±0.2 3.3 V 15.6±0.2 Temp) 800 100max 1max 100max 800min 8min 4 to 9 5max 1.5max 4typ 100typ (Case VCEO ICBO1 ICBO2 IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT COB Unit µA mA µA V –30˚C V External Dimensions FM100(TO3PF) (Ta=25°C) Ratings Conditions VCB=1200V VCB=1500V VEB=6V IC=10mA VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.2A IC=5A, IB=1.2A VCE=12V, IE=–0.5A VCB=10V, f=1MHz mp) 1500 Symbol ase Te VCBO ■Electrical Characteristics 9.5±0.2 Unit 23.0±0.3 Ratings Symbol 16.2 ■Absolute maximum ratings (Ta=25°C) Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose 80 100µs 40 at si nk Collecto r Curr ent I C (A) he Collector Cur rent I C (A) ite Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% fin 0.5 In 1 60 ith Without Heatsink Natural Cooling 5 W 5 Maxim um Power Dissipation P C (W) 10 10 20 Without Heatsink 1 100 500 Collector-Emitter Voltage V C E (V) 1000 0.1 50 100 500 1000 Collector-Emitter Voltage V C E (V) 2000 3.5 0 0 50 100 150 Ambient Temperature Ta(˚C) 123 2SC5003 V 7(Pulse14) A IB 3.5 A PC 80(Tc=25°C) W 150 °C –55 to +150 °C Tj Tstg V V V MHz pF 0.8±0.2 ø3.3±0.2 a b 1.75 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) tstg (µs) tf (µs) 200 50 4 10 –5 0.8 –1.6 4.0max 0.2max 3 300mA 2 I B =100mA 1 0 1 0 2 3 6 1 0 4 0.2 0.5 Collector-Emitter Voltage V C E (V) 1 5 0 10 20 t s t g• t f ( µs) ˚C 0˚C 5 2 0.02 0.05 0.1 0.5 1 5 7 . V C C =200V . I C : I B 1 : –I B 2 =5 :1: 2 10 Transient Thermal Resistance Swit ching Time D C Cur r ent Gai n h F E 5˚C –3 0.5 t stg 5 tf 1 0.5 0.1 0.2 0.5 1 5 7 1 0.5 0.1 1 10 1000 2000 P c – T a Derating 20 20 100 Time t(ms) Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 1.5 3 Collector Current I C (A) Collector Current I C (A) 1.0 θ j-a – t Characteristics t stg •t f – I C Characteristics (Typical) 50 10 0 Base-Emittor Voltage V B E (V) (V C E =5V) 25 2 Collector Current I C (A) h FE – I C Characteristics (Typical) 12 4 mp) 2 e Te 600 mA 4 (I C : I B =5 :1) ase Te 5 (V CE =5V) (Cas Collector Current I C (A) 900 mA E 125˚C 6 C Weight : Approx 6.5g a. Part No. b. Lot No. 7 Collector Current I C (A) 1. 4A 3.35 1.5 I C – V BE Temperature Characteristics (Typical) 3 θ j - a ( ˚C/W) A B VCE(sat)–IC Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) 1.7 4.4 25˚C (C I C – V CE Characteristics (Typical) 7 0.65 +0.2 -0.1 5.45±0.1 1.5 RL (Ω) 0.8 2.15 5.45±0.1 VCC (V) 3.45 ±0.2 3.0 6 IC VEBO 5.5±0.2 5.5 V 15.6±0.2 1.6 800 Unit µA mA mA V 3.3 VCEO ICBO1 ICBO2 ICEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) VFEC fT COB Ratings 100max 1max 1max 6min 8min 4 to 9 5max 1.5max 2.0max 4typ 100typ Temp) V External Dimensions FM100(TO3PF) (Ta=25°C) Conditions VCB=1200V VCB=1500V VCE=800V IEB=300mA VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.2A IC=5A, IB=1.2A IEC=7A VCE=12V, IE=–0.5A VCB=10V, f=1MHz (Case 1500 Symbol –30˚C VCBO ■Electrical Characteristics mp) Unit E Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose 23.0±0.3 Ratings Symbol ( 50Ω ) 9.5±0.2 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) C B 16.2 Built-in Damper Diode ■Absolute maximum ratings (Ta=25°C) Equivalent circuit 80 100µs 2000 Collecto r Cur rent I C (A) Collect or Cur ren t I C (A) nk 1000 si 500 Collector-Emitter Voltage V C E (V) 40 at 100 he 124 0.1 50 ite Collector-Emitter Voltage V C E (V) 1000 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% fin 500 0.5 In 1 100 1 60 ith Without Heatsink Natural Cooling 5 W 5 M aximum Po wer Dissipat io n P C (W) 10 10 20 3.5 0 Without Heatsink 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150 2SC5071 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) 100max µA V IEBO VEB=10V 100max µA V VCEO 400 10 V(BR)CEO IC=25mA 400min 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30 IB 4 A VCE(sat) IC=7A, IB=1.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=7A, IB=1.4A 1.3max V Tj 150 °C fT VCE=12V, IE=–1A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 105typ pF Tstg 19.9±0.3 V IC VEBO 15.6±0.4 9.6 a 200 RL (Ω) VBB1 (V) 28.5 7 10 2 3 1.05 +0.2 -0.1 5.45±0.1 VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –5 0.7 –1.4 1.0max 3.0max 0.5max I C – V CE Characteristics (Typical) 2.0±0.1 ø3.2±0.1 0.65 +0.2 -0.1 5.45±0.1 B IC (A) 4.8±0.2 b V ■Typical Switching Characteristics (Common Emitter) VCC (V) 1.8 VCB=500V V 5.0±0.2 ICBO 500 2.0 Unit VCBO External Dimensions MT-100(TO3P) (Ta=25°C) 4.0 Symbol Ratings Unit 4.0max ■Electrical Characteristics Conditions Ratings Symbol 20.0min ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose C 1.4 E Weight : Approx 6.0g a. Part No. b. Lot No. I C – V BE Temperature Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) (I C /I B =5) 0 0 1 2 3 12 5˚ 0.5 1 5 t on •t stg • t f – I C Characteristics (Typical) 5 DC Cur rent Gain h F E 125˚C Swi tchi ng T im e 25˚C –30˚C 10 1 5 10 12 1 0.5 tf t on 0.1 0.5 1 10 12 0µ 1 ) 10 e Te (Cas 100 1000 P c – T a Derating 100 Collector Curr ent I C (A) nk Collector-Emitter Voltage V C E (V) 500 si 100 50 at 50 he 10 ite 0.1 5 Without Heatsink Natural Cooling L=3mH I B2 =1.0A Dut y:less than 1% fin 500 0.5 In Without Heatsink Natural Cooling 1 ith 1 5 W 5 Collector-Emitter Voltage V C E (V) mp) ) mp 0.3 Time t(ms) 10 100 emp 0.5 s 10 50 se T 1 M aximum Power Dissipa ti on P C (W) 10 10 Te 3 30 30 Co lle ctor Cu rren t I C (A) 5 1.0 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 0.1 5 0.5 Collector Current I C (A) Collector Current I C (A) 0.5 t s tg V C C 200V I C :I B1 :I B2 =10:1:–2 Transient Thermal Resistance t on• t s tg • t f (µs) 40 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 10 Collector Current I C (A) h FE – I C Characteristics (Typical) 0.05 2 C 5˚ –5 0.05 0.1 Collector-Emitter Voltage V C E (V) 8 0.02 4 C V C E (sat) 0 0.02 4 (C se 125˚C 6 –55˚C 2 ) emp ase T (Ca I B =100mA e Temp) 25˚C (Cas 8 (Ca 200mA 4 Temp) 25˚C 6 –55˚C (Case 5˚C 400m A 1 12 8 10 V B E (sat) θ j - a (˚ C/W) Collector Current I C (A) 60 0m A Collector Current I C (A) 80 0m A 10 (V CE =4V) 12 as e 25 Temp ) ˚C 1A (C Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 12 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 125 2SC5099 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1907) V IEBO VEB=6V 10max µA 6 V V(BR)CEO IC=50mA 80min V 6 A hFE VCE=4V, IC=2A 50min∗ IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 110typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 30 10 3 10 –5 0.3 –0.3 0.16typ 2.60typ 0.34typ I B =10mA 0 0 1 2 3 1 I C =6A 4A 0 4 0 0.5 1.0 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 300 200 D C Cur r ent Gai n h F E Typ 50 1 100 25˚C –30˚C 50 20 0.02 56 0.5 0.1 Collector Current I C (A) 1 2 1 56 θ j-a – t Characteristics 5 1 0.5 0.3 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 20 60 10 si nk Without Heatsink Natural Cooling at 0.5 he 1 40 ite Collect or Cur ren t I C (A) s DC fin 10 s ms In 20 0m 1m ith Typ 5 10 W 30 10 Maxim um Power Dissip ation P C (W) 40 Cut-o ff F requ ency f T (MH Z ) DC C urrent G ain h FE 125˚C 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 1.5 Base Current I B (A) h FE – I C Characteristics (Typical) 30 0.02 2 2A Collector-Emitter Voltage V C E (V) 100 e Te mp e Tem ) p) 20mA 2 E 4 Cas 30mA 2 ˚C ( 50 mA 4 C Weight : Approx 6.5g a. Part No. b. Lot No. (V CE =4V) 125 8 3.35 1.5 6 Collector Current I C (A) 10 0mA θ j- a ( ˚C/W) 15 A 0m 4.4 I C – V BE Temperature Characteristics (Typical) 3 Transient Thermal Resistance 0m A 0.65 +0.2 -0.1 5.45±0.1 B V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) 20 0m 0.8 2.15 1.5 RL (Ω) A 1.75 1.05 +0.2 -0.1 VCC (V) I C – V CE Characteristics (Typical) 3.45 ±0.2 ø3.3±0.2 a b 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) 6 5.5±0.2 3.0 23.0±0.3 15.6±0.2 16.2 Tstg 0.8±0.2 µA 5.5 IC 10max 1.6 VEBO VCB=120V 3.3 80 ICBO ) VCEO Unit Temp V Ratings (Case 120 External Dimensions FM100(TO3PF) (Ta=25°C) Conditions –30˚C VCBO Symbol (Cas Unit 25˚C Ratings 9.5±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol Application : Audio and General Purpose 20 Without Heatsink 0 –0.02 0.1 –0.1 –1 Emitter Current I E (A) 126 –6 5 10 50 Collector-Emitter Voltage V C E (V) 100 3.5 0 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150 2SC5100 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908) hFE IB 3 A VCE(sat) PC 75(Tc=25°C) W fT 150 °C COB °C ∗hFE Rank Tj Tstg –55 to +150 V 120min IC=50mA VCE=4V, IC=3A 50min∗ IC=3A, IB=0.3A 0.5max V VCE=12V, IE=–0.5A 20typ MHz VCB=10V, f=1MHz 200typ pF VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 40 10 4 10 –5 0.4 –0.4 0.13typ 3.50typ 0.32typ I B =10mA 0 0 1 2 3 1 0 4 0 0.2 0.4 4A 2A 0.6 0.8 0 1.0 0.5 (V C E =4V) 200 Typ 50 1 5 100 25˚C –30˚C 50 20 0.02 8 Transient Thermal Resistance DC Curr ent Gain h FE 125˚C 100 0.1 Collector Current I C (A) 0.5 1.5 1 5 8 4 1 0.5 0.2 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 1.0 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 200 Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 80 20 40 10 he at 40 si nk Collecto r Cur ren t I C (A) ite Without Heatsink Natural Cooling fin 0.5 In 1 60 ith 10 s 20 0m DC 5 Typ s 10 m 30 W Ma xim um Powe r Dissipation P C ( W) 10 Cut -off Fre quen cy f T (MH Z ) DC C urrent G ain h FE 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 2 Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 4 I C =8A Collector-Emitter Voltage V C E (V) 20 0.02 6 mp) 2 e Te 20mA 2 E Cas 4 Weight : Approx 6.5g a. Part No. b. Lot No. (V C E =4V) ˚C ( 50m A C 125 6 Collector Current I C (A) 75 m A 3.35 1.5 8 θ j- a ( ˚C/W) 1 B 3 Collector-Emitter Saturation Voltage V C E (s at) (V ) A A 0m 20 350m Collector Current I C (A) 15 4.4 I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) A 00m 0.65 +0.2 -0.1 5.45±0.1 1.5 IC (A) I C – V CE Characteristics (Typical) 0.8 2.15 1.05 +0.2 -0.1 RL (Ω) A 1.75 5.45±0.1 VCC (V) 0m ø3.3±0.2 a b O(50 to 100), P(70 to 140), Y(90 to 180) ■Typical Switching Characteristics (Common Emitter) 8 3.45 ±0.2 3.0 V(BR)CEO A 0.8±0.2 V 8 µA 5.5 6 IC 10max 5.5±0.2 1.6 VEBO VEB=6V 15.6±0.2 ) IEBO µA Temp V 10max (Case 120 VCB=160V –30˚C VCEO Conditions mp) ICBO e Te V (Cas 160 Unit 25˚C Unit VCBO External Dimensions FM100(TO3PF) (Ta=25°C) Ratings 3.3 Symbol 9.5±0.2 ■Electrical Characteristics Ratings 23.0±0.3 Symbol 16.2 ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 20 Without Heatsink 0 –0.02 –0.1 –1 Emitter Current I E (A) –8 0.1 5 10 50 100 Collector-Emitter Voltage V C E (V) 150 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 127 2SC5101 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909) Application : Audio and General Purpose Ratings Unit ICBO VCB=200V 10max µA VCEO 140 V IEBO VEB=6V 10max µA V 140min IC=50mA VCE=4V, IC=3A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A 0.5max V PC 80(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 250typ –55 to +150 ∗hFE Rank °C pF 1.75 16.2 Tstg ø3.3±0.2 a b 3.0 hFE 3.3 V(BR)CEO A O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 5.45±0.1 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 60 12 5 10 –5 0.5 –0.5 0.24typ 4.32typ 0.40typ 4 20mA 2 10mA 0 0 1 2 3 1 2 I C =10A 0 4 0 0.5 1.0 1.5 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 Typ 100 50 1 5 125˚C 25˚C 100 –30˚C 50 20 0.02 10 Transient Thermal Resistance DC Curr ent Gain h F E 300 0.5 0 1 0.1 Collector Current I C (A) 0.5 1 5 10 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 Base-Emitter Voltage V B E (V) (V C E =4V) DC Cur rent Gain h FE 0 2.0 Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 4 5A Collector-Emitter Voltage V C E (V) 20 0.02 6 e Te mp) Temp ) 50 mA 2 (Case 75 m A 6 8 25˚C A E (V CE =4V) Cas 100m C Weight : Approx 6.5g a. Part No. b. Lot No. 10 3 ˚C ( mA 125 150 Collector Current I C (A) A 3.35 1.5 I C – V BE Temperature Characteristics (Typical) θ j - a (˚ C/W) 2 m 00 Collector-Emitter Saturation Voltage V C E (s at) (V ) 8 Collector Current I C (A) 30 A 0m 4.4 B V CE ( sat ) – I B Characteristics (Typical) IB =4 00 m A 10 0.65 +0.2 -0.1 5.45±0.1 1.5 I C – V CE Characteristics (Typical) 0.8 2.15 Temp) V 10 3.45 ±0.2 (Case 6 IC 5.5±0.2 –30˚C VEBO 15.6±0.2 23.0±0.3 Symbol 0.8±0.2 Conditions V 5.5 Unit 200 1.6 Ratings VCBO Symbol External Dimensions FM100(TO3PF) (Ta=25°C) 9.5±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 80 si nk Collector Curre nt I C (A) 40 at Without Heatsink Natural Cooling he 0.5 ite 1 60 fin C In D ith 10 5 ms s 0m 20 10 Typ 10 Cut- off F req uency f T (M H Z ) 10 30 W M aximum Power Dissipa ti on P C (W) 30 40 20 Without Heatsink 0 –0.02 –0.1 –1 Emitter Current I E (A) 128 –10 0.1 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150 2SC5124 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) 6 V IC 10(Pulse20) A IB 5 A PC 100(Tc=25°C) W Tj 150 °C –55 to +150 °C Tstg V V MHz pF 0.8±0.2 1.75 1.05 +0.2 -0.1 1.5 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 33.3 6 10 –5 1.2 –2.4 0.1typ 4.0typ 0.2typ I C – V CE Characteristics (Typical) A 1. 8A Collector Current I C (A) 8 1. 2A 6 700 mA 4 300 mA 2 0 I B =100mA 1 0 2 3 0.65 +0.2 -0.1 5.45±0.1 4.4 3.35 1.5 C Weight : Approx 6.5g a. Part No. b. Lot No. E I C – V BE Temperature Characteristics (Typical) VCE(sat)–IC Characteristics (Typical) (V C E =5V) 10 I C / I B =5:1 Collector Current I C (A) 2.4 B 3 Collector-Emitter Saturation Voltage V C E (s at) (V ) 10 0.8 2.15 ■Typical Switching Characteristics (Common Emitter) RL (Ω) 3.45 ±0.2 ø3.3±0.2 a b 5.45±0.1 VCC (V) 5.5±0.2 3.0 VEBO 15.6±0.2 5.5 V Unit µA mA µA V 100max 1max 100max 800min 8min 4 to 9 5max 1.5max 3typ 130typ 1.6 800 Ratings Conditions VCB=1200V VCB=1500V VEB=6V IC=10mA VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCE=12V, IE=–1A VCB=10V, f=1MHz 3.3 VCEO Symbol ICBO1 ICBO2 IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT COB 9.5±0.2 V 23.0±0.3 Unit 1500 External Dimensions FM100(TO3PF) (Ta=25°C) 19.1 16.2 Ratings VCBO Symbol Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) 2 1 8 6 4 2 0 0.02 4 0.05 0.1 Collector-Emitter Voltage V C E (V) 0.5 1 5 0 10 0 0.5 h FE – I C Characteristics (Typical) 1.0 Base-Emittor Voltage V B E (V) Collector Current I C (A) θ j-a – t Characteristics t stg •t f – I C Characteristics (Typical) (V C E =5V) 10 t o n• t s tg • t f (µ s) 125˚C 25˚C Switching Ti me DC Curr ent Gain h FE 40 –55˚C 10 5 3 0.02 0.1 0.5 1 5 10 t s tg 5 V C C 200V I C :I B 1 :–I B 2 =5:1:2 1 0.5 tf 0.1 0.2 0.5 1 5 10 Collector Current I C (A) Collector Current I C (A) Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 30 30 100 0µ 10 500 Collector-Emitter Voltage V C E (V) 1000 0.1 50 100 500 1000 Collector-Emitter Voltage V C E (V) 2000 nk 100 si 50 50 at 10 he 5 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% ite 0.1 0.5 fin 0.5 1 In 1 5 ith Co lle ctor Cu rre nt I C (A) s 5 W Maximu m Power Dissipa tion P C (W) 10 10 Collector Curre nt I C ( A) P c – T a Derating 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 129 2SC5130 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Ratings Unit VCB=500V 100max µA VEB=10V 10max µA IC=25mA 400min ICBO VCEO 400 V IEBO VEBO 10 V V(BR)CEO 5(Pulse10) A hFE VCE=4V, IC=1.5A 10 to 30 10.1±0.2 V A VCE(sat) IC=1.5A, IB=0.3A 0.5max 30(Tc=25°C) W VBE(sat) IC=1.5A, IB=0.3A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.3A 20typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 30typ pF Tstg 3.9 2 PC ø3.3±0.2 a b V IB 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 133 1.5 10 –5 0.15 –0.3 1max 2max 0.3max 2 3 0.05 0.1 0.5 1 0 5 2 10 1 5 t s tg 1 Transient Thermal Resistance t on• t s t g • t f (µ s) –55˚C Swi tchi ng T im e 0.5 t on tf V C C 200V I C :I B 1 :–I B2 =10:1:2 0.1 0.1 0.5 1 3 0.5 0.4 50 ) (Case Temp mp) –55˚C 100 1000 P c – T a Derating ite he at si nk Without Heatsink Natural Cooling L=3mH –IB2=0.5A Duty:less than 1% 20 fin Without Heatsink Natural Cooling 1 0.5 e Te 10 In 1 0.5 1 ith 5 s 1.4 30 10 µs 1.2 W 5 0µ Co lle ctor Cu rre nt I C ( A) 10 1.0 Time t(ms) 20 20 0.8 1 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 0.6 5 Collector Current I C (A) Collector Current I C (A) 10 0.4 θ j-a – t Characteristics Maximu m Power Dissi pation P C ( W) DC C urrent G ain h FE 25˚C 0.5 0.2 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 125˚C 0.1 0 Collector Current I C (A) (V C E =4V) 0.05 p) –55˚C (Case Temp) 0 0.01 4 h FE – I C Characteristics (Typical) 5 0.01 em 1 Collector-Emitter Voltage V C E (V) 50 eT 25˚C (Case Temp) θ j - a (˚ C/W) 1 0 2 Cas I B =50mA 1 125˚C (Case Temp) 0.5 3 (Cas 2 1.0 ˚C ( 15 0m A 4 25˚C 30 0m A 3 I C / I B =5 Const. 125 50 0m A 5 1.5 Collector Current I C (A) mA 4 Collector Current I C (A) I C – V BE Temperature Characteristics (Typical) VCE(sat)–IC Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 800 Collecto r Cur ren t I C (A) Weight : Approx 2.0g a. Part No. b. Lot No. B C E (V C E =4V) 5 0 2.4±0.2 2.2±0.2 VCC (V) I C – V CE Characteristics (Typical) 4.2±0.2 2.8 c0.5 4.0±0.2 V 0.8±0.2 Unit 600 ±0.2 Conditions Ratings VCBO IC External Dimensions FM20(TO220F) 8.4±0.2 Symbol Application : Switching Regulator and General Purpose (Ta=25°C) 16.9±0.3 Symbol ■Electrical Characteristics 13.0min ■Absolute maximum ratings (Ta=25°C) 10 Without Heatsink 2 0.1 5 10 50 100 Collector-Emitter Voltage V C E (V) 130 500 0.1 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC5239 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Ratings Unit ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 VEBO IC Symbol 10.2±0.2 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.25A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 35typ pF Tstg V IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 250 250 1 10 –5 0.15 –0.45 0.7max 4.0max 0.5max 100m A 1 I B =40mA 1 2 3 5 I C /I B =5 Const. 4 1.0 V B E (sat) 0.5 0.1 0.5 1 0 5 t on •t stg • t f – I C Characteristics (Typical) –55˚C 10 1 5 6 t s tg V C C 250V I C :I B 1 :I B2 =1:0.15:–0.45 1 tf 0.5 t on 0.1 0.2 0.5 100 1000 Time t(ms) P c – T a Derating 50 100 500 Collector-Emitter Voltage V C E (V) 1000 Collector Curr ent I C ( A) nk 50 si 0.01 10 at 0.05 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% he 0.1 30 ite Collector-Emitter Voltage V C E (V) 500 0.5 40 fin 100 1 In Without Heatsink Natural Cooling 50 10 ith 0.1 10 1 s 0.5 0.01 0.3 7 5 µs 1 0.05 0.5 M aximu m Power Dissip ation P C (W) 0µ 3 1 W Co lle ctor Cu rr ent I C (A) 50 10 1 4 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 1.0 θ j-a – t Characteristics Collector Current I C (A) Collector Current I C (A) 7 5 Transient Thermal Resistance 7 5 t o n • t s t g• t f ( µs) 25˚C Swit ching Time DC C urrent G ain h FE 125˚C 0.5 0.5 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 Collector Current I C (A) h FE – I C Characteristics (Typical) 0.05 2 V C E (sat) Collector-Emitter Voltage V C E (V) 5 4 0.02 3 1 0 0.03 0.05 4 Collector Current I C (A) 2 40 1.4 I C – V BE Temperature Characteristics (Typical) 1.5 θ j- a ( ˚C/W) Collector Current I C (A) 150 mA 0 2.5 (V C E =4V) 300mA 200 mA 0 1.35 Weight : Approx 2.6g a. Part No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) A Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 40 b B C E RL (Ω) 0m ø3.75±0.2 a 2.5 VCC (V) I C – V CE Characteristics (Typical) 2.0±0.1 0.65 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 3 4.8±0.2 3.0±0.2 Conditions V 16.0±0.7 Unit 900 8.8±0.2 Ratings VCBO Symbol External Dimensions MT-25(TO220) (Ta=25°C) 4.0max ■Electrical Characteristics 12.0min ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 20 10 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 131 2SC5249 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) A IB 1.5 PC 35(Tc=25°C) Tj Tstg µA 600min V hFE VCE=4V, IC=1A 20 to 40 A VCE(sat) IC=1A, IB=0.2A 0.5max W VBE(sat) IC=1A, IB=0.2A 1.2max V 150 °C fT VCE=12V, IE=–0.3A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF 16.9±0.3 100max 3.9 V RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 200 1 10 –5 0.1 –0.1 1.0max 19max 1.0max 1 2 3 0 0.01 4 Collector-Emitter Voltage V C E (V) 0.05 h FE – I C Characteristics (Typical) 0.1 0.5 1 30 t o n • t s tg • t f (µ s) 25˚C –55˚C 10 0.5 1 3 10 V C C 200V 5 I C :I B1 :–I B 2 =10:1:1 t on tf 1 0.5 0.2 0.1 0.5 1 3 Tem 1 0.5 0.3 1 10 5 5 100 7 nk Collect or Cur ren t I C (A) si 0.05 10 at 0.05 10 20 he 0.1 ite 0.1 Without Heatsink Natural Cooling L=3mH –IB2=–1.0A Duty:less than 1% fin 0.5 In 1 30 ith Without Heatsink Natural Cooling P c – T a Derating W 0.5 1000 35 µs 1 100 Time t(ms) Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 7 1.0 θ j-a – t Characteristics Collector Current I C (A) Collector Current I C (A) Collecto r Cur ren t I C (A) 0.5 3 Ma xim um Powe r Dissipation P C ( W) 0.1 t s tg Transient Thermal Resistance 100 Switching Ti me DC Cur rent Gain h FE 125˚C 0.05 0 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 200 5 0.01 p) 0 3 (V C E =4V) 50 1 Collector Current I C (A) θ j- a (˚ C/W) 0 25˚C (Case Temp) –55˚C (Case Temp) se I B =20mA 125˚C (Case Temp) 2 (Ca 50mA 1 I C / I B =5 Const. ˚C 100m A (V C E =4V) 3 0.5 125 2 0 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) 200 mA 2.4±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. B C E VCE(sat)–IC Characteristics (Typical) 300mA 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 VCC (V) 3 1.35±0.15 2.54 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.3±0.2 a b ) 3(Pulse6) IC VEB=7V IC=10mA Temp V(BR)CEO 4.2±0.2 2.8 c0.5 (Case IEBO V 10.1±0.2 –55˚C V 7 µA 4.0±0.2 600 VEBO 100max 0.8±0.2 VCEO VCB=600V ±0.2 ICBO Unit mp) V Ratings e Te 600 External Dimensions FM20(TO220F) (Ta=25°C) Conditions (Cas VCBO Symbol 25˚C Unit 8.4±0.2 ■Electrical Characteristics Ratings Symbol 13.0min ■Absolute maximum ratings (Ta=25°C) Application : Switching Regulator and General Purpose 10 Without Heatsink 50 100 Collector-Emitter Voltage V C E (V) 132 500 50 100 Collector-Emitter Voltage V C E (V) 500 2 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC5271 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 200 V IEBO VEBO 7 V V(BR)CEO 5(Pulse10) A hFE1 IB 2 A hFE2 VCE=2V, IC=1mA 15min PC 30(Tc=25°C) W VCE(sat) IC=2.5A, IB=0.5A 1.0max Tj 150 °C VBE(sat) IC=2.5A, IB=0.5A 1.5max V –55 to +150 °C fT VCE=12V, IE=–0.5A 10typ MHz COB VCB=10V, f=1MHz 45typ pF Tstg 100max µA VEB=7V 100max µA IC=10mA 200min V VCE=2V, IC=2.5A 10 to 30 150 RL (Ω) 60 IC (A) 2.5 4.2±0.2 2.8 c0.5 ø3.3±0.2 a b V 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 2.4±0.2 2.2±0.2 ■Typical Switching Characteristics (Common Emitter) VCC (V) 10.1±0.2 3.9 IC VCB=300V External Dimensions FM20(TO220F) 4.0±0.2 300 Unit 0.8±0.2 VCBO Ratings ±0.2 (Ta=25°C) Conditions 8.4±0.2 Symbol Unit 16.9±0.3 ■Electrical Characteristics Ratings Symbol 13.0min ■Absolute maximum ratings (Ta=25°C) Application : Resonant Switching Regulator and General Purpose VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 10 –5 0.5 –1.0 0.3max 1.0max 0.1max B C E Weight : Approx 2.0g a. Part No. b. Lot No. 133 2SC5287 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 5(Pulse10) A hFE VCE=4V, IC=1.8A 10 to 25 IC IB 2.5 A VCE(sat) IC=1.8A, IB=0.36A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=1.8A, IB=0.36A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.35A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF Tstg VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 250 139 1.8 10 –5 0.27 –0.9 0.7max 4.0max 0.5max 1.4 E Weight : Approx 6.0g a. Part No. b. Lot No. I C – V BE Temperature Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) 400 mA 250 mA 3 150 mA 2 I B =50mA 1 3 4 6 1.0 V B E (sat) 0.5 0 0.03 0.05 0.1 0.5 25˚C Switching T im e –55˚C 10 1 5 10 tf 0.5 t on 0.1 0.2 0.5 5 0.5 0.3 1 10 µs P c – T a Derating 80 5 fin ite he 40 at si nk 0.1 0.1 Without Heatsink Natural Cooling IB2=–1.0A L=3mH Duty:less than 1% In 0.5 ith 1 60 W Without Heatsink Natural Cooling 20 0.05 0.05 100 Collector-Emitter Voltage V C E (V) 500 1000 10 s 0.5 100 Time t(ms) Reverse Bias Safe Operating Area Collecto r Cur rent I C (A) 0µ 1 134 1 1 Maxim um Power Dissi pation P C (W) 50 10 1.0 3 Collector Current I C (A) 20 50 0.5 θ j-a – t Characteristics 20 10 0 Base-Emittor Voltage V B E (V) 1 Safe Operating Area (Single Pulse) 0.03 10 0 t s tg V C C 250V I C :I B1 :I B 2 =1:0.15:–0.5 Collector Current I C (A) 5 2 5 7 6 5 t on • t s t g • t f ( µs) 125˚C 0.5 1 t on •t stg • t f – I C Characteristics (Typical) (V C E =4V) 0.1 3 Collector Current I C (A) h FE – I C Characteristics (Typical) 0.05 4 1 Collector-Emitter Voltage V C E (V) 5 4 0.02 5 V C E (sat) θ j - a (˚ C/W) 2 I C /I B =5 Const. Transient Thermal Resistance 1 0 7 1.5 Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 600mA mA 4 Collector Current I C (A) C (V CE =4V) 0 70 D C Cur r ent Gai n h F E 0.65 +0.2 -0.1 5.45±0.1 B IC (A) 5 Collecto r Cur rent I C (A) 2 3 5.45±0.1 RL (Ω) 40 ø3.2±0.1 1.05 +0.2 -0.1 VCC (V) 0 2.0±0.1 V ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) a 4.8±0.2 b 20.0min VEBO 15.6±0.4 9.6 1.8 Unit VCB=800V Symbol 5.0±0.2 Ratings ICBO 2.0 Conditions V 4.0 Unit 900 19.9±0.3 Ratings VCBO Symbol External Dimensions MT-100(TO3P) (Ta=25°C) 4.0max ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) 0.03 50 Without Heatsink 100 500 Collector-Emitter Voltage V C E (V) 1000 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SC5333 Silicon NPN Triple Diffused Planar Transistor IC 2 A hFE VEB=6V 1.0max mA IC=25mA 300min V VCE=4V, IC=0.5A 30min IB 0.2 A VCE(sat) IC=1.0A, IB=0.2A 1.0max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.2A 10typ MHz Tj 150 °C COB VCB=10V, f=1MHz 75typ pF –55to+150 °C Tstg 1.35±0.15 1.35±0.15 IB1 (A) 0.1 –0.2 0 1 2 to p 3 4.0typ 1.0typ 2 1 0 0.1 0.2 h FE – I C Characteristics (Typical) (V C E =4V) 10 1000 2000 125 100 ˚C Transient Thermal Resistance DC Cur r ent Gai n h F E Typ 50 0.2 25˚C 50 10 3 –30 5 10 ˚C 50 100 0.4 f T – I E Characteristics (Typical) 1.0 500 1000 2000 1 0.5 0.3 1 10 100 1000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 35 ith In fin ite 20 he at si nk Maxim um Power Dissip ation P C (W) 30 W 10 0.8 θ j-a – t Characteristics 20 Typ 0.6 4 Collector Current I C (mA) Collector Current I C (mA) Cut- off F req uency f T (M H Z ) DC Cur r ent Gai n h F E 200 100 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) (V C E =4V) 10 0 0.3 Base Current I B (A) 200 3 1 2A I C =1A 0 4 (V CE =4V) 2 3 Collector-Emitter Voltage V C E (V) 100 I C – V BE Temperature Characteristics (Typical) mp) 1 0 0.3typ Weight : Approx 2.0g a. Part No. b. Lot No. B C E e Te Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) mA A /s I B =2 0m tf (µs) V CE ( sa t ) – I B Characteristics (Typical) 2 I tstg (µs) (Cas I C – V CE Characteristics (Typical) 200 B= ton (µs) IB2 (A) 125˚C –5 1.0 2.4±0.2 2.2±0.2 Collector Current I C (A) 100 100 VB2 (V) IC (A) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 θ j- a (˚C /W ) RL (Ω) ø3.3±0.2 a b ■Typical Switching Characteristics (Common Emitter) VCC (V) 4.2±0.2 2.8 c0.5 p) V(BR)CEO 10.1±0.2 mp) IEBO V mA ase Te V 6 1.0max ase Tem 300 VEBO VCB=300V –30˚C (C VCEO External Dimensions FM20(TO220F) 4.0±0.2 ICBO Unit 25˚C (C V Ratings 0.8±0.2 300 Conditions ±0.2 VCBO Symbol 3.9 Unit 16.9±0.3 Ratings Symbol (Ta=25°C) 8.4±0.2 ■Electrical Characteristics 13.0min ■Absolute maximum ratings (Ta=25°C) Application : Series Regulator, Switch, and General Purpose 10 Without Heatsink 0 –0.003 –0.01 –0.05 –0.1 Emitter Current I E (A) –0.5 –1 2 0 0 25 50 75 100 12 5 150 Ambient Temperature Ta(˚C) 135 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V(BR)CEO IC 12 A Ratings Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–3A 90typ MHz °C COB VCB=10V, f=1MHz 120typ pF Tstg –55to+150 ∗hFE Rank O(70 to 140), Y(120 to 240), G(200 to 400) 10.1±0.2 4.0±0.2 VCEO Symbol 4.2±0.2 2.8 c0.5 ø3.3±0.2 a b 0.8±0.2 ICBO V ±0.2 V 3.9 Unit 60 External Dimensions FM20(TO220F) 8.4±0.2 Ratings VCBO Symbol (Ta=25°C) 16.9±0.3 ■Electrical Characteristics 13.0min ■Absolute maximum ratings (Ta=25°C) Application : Emergency Lighting Inverter and General Purpose 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 2.4±0.2 2.2±0.2 B C E 136 Weight : Approx 2.0g a. Part No. b. Lot No. 2SD1769 Silicon NPN Triple Diffused Planar Transistor Unit Conditions 120 V ICBO VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 20max mA 6 V V(BR)CEO 6(Pulse10) A hFE IC=10mA 120min VCE=2V, IC=3A 2000min 10.2±0.2 V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max Tj 150 °C fT VCE=12V, IE=–0.2A 100typ –55 to +150 °C COB VCB=10V, f=1MHz typ V 0.65 +0.2 -0.1 IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 30 10 3 10 –1.5 3 –3 0.5typ 5.5typ 1.5typ I B =0.3mA 0 0 2 4 0 6 0.3 1 Collector-Emitter Voltage V C E (V) 5 10 50 10000 D C Cur r ent Gai n h FE 5000 1000 500 1 5 1000 5˚C ˚C 25 500 –3 12 0˚ C 100 50 30 0.03 0.05 0.1 10 Collector Current I C (A) 0.5 1 5 10 10 p) Temp ) mp) Tem 2 1 5 0.5 0.2 1 5 10 50 100 1000 5000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 20 120 50 100 Collector-Emitter Voltage V C E (V) 200 Collector Curre nt I C ( A) nk 50 si 10 at 5 he 0.08 3 30 ite –8 fin Emitter Current I E (A) –5 Without Heatsink Natural Cooling In –1 0.5 ith –0.5 1 40 W –0.05 µs 0 C 500 50 s 1m s 3m ms 10 D 5 Ma xim um Powe r Dissipation P C (W) 10 Typ 100 Cu t-of f Fr eque ncy f T (MH Z ) DC Curr ent Gain h F E (V C E =2V) Typ 0.5 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 10000 0.1 0 Base-Emittor Voltage V B E (V) (V C E =2V) 80 0.03 0 100 Base Current I B (mA) h FE – I C Characteristics (Typical) 5000 2 (Case 4A 2A 1 4 –30˚C 2 I C =6 A e Te 0 .4 m A se 4 (Ca A A 0 .5 m 6 (Cas 0 .7 m 2 ˚C A 1mA 125 1 .5 m 6 8 Collector Current I C (A) 3 (V CE =2V) 3 θ j - a (˚C /W) 5m I C – V BE Temperature Characteristics (Typical) Transient Thermal Resistance m 2mA mA 1.4 Weight : Approx 2.6g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A m 20 Collector Current I C (A) 10 A 2.5 B C E RL (Ω) A 1.35 2.5 VCC (V) 8 b pF ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 2.0±0.1 ø3.75±0.2 a V MHz 4.8±0.2 25˚C Tstg Unit 3.0±0.2 Ratings VCBO IC (2.5kΩ)(200Ω) E External Dimensions MT-25(TO220) (Ta=25°C) 16.0±0.7 Symbol 8.8±0.2 ■Electrical Characteristics Ratings VEBO B 4.0max ■Absolute maximum ratings (Ta=25°C) C Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose 12.0min Darlington Symbol Equivalent circuit 20 10 2 0 Without Heatsink 0 25 50 75 100 12 5 150 Ambient Temperature Ta(˚C) 137 2SD1785 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1258) VCEO 120 V IEBO VEBO 6 V V(BR)CEO 6(Pulse10) A hFE IC Symbol Conditions Unit VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min VCE=2V, IC=3A 2000min V 1 A VCE(sat) PC 30(Tc=25°C) W fT VCE=12V, IE=–0.1A 100typ MHz Tj 150 °C COB VCB=10V, f=1MHz 70typ pF –55 to +150 °C Tstg 1.5max RL (Ω) VCC (V) IC (A) 10 30 VBB1 (V) 3 10 –1.5 1.5typ 5.5typ I C – V BE Temperature Characteristics (Typical) 0 2 4 0 6 0.3 1 Collector-Emi tter Voltage V C E (V) 5 10 50 (V C E =2V) 10000 5000 DC C urrent G ain h FE p 1000 500 12 5 25 1000 500 –3 0˚ C 100 50 30 0.03 0.05 0.1 100 1 5˚C ˚C Transient Thermal Resistance Ty 0.5 10 Collector Current I C (A) 0.5 ) ) mp) 2 1 5 10 5 1 0.5 1 10 100 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) emp 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 10000 0.1 0.4 Base-Emittor Voltage V B E (V) (V C E =2V) 0.03 0 100 Base Current I B (mA) h FE – I C Characteristics (Typical) 5000 2 e Te 4A 2A 1 4 (Cas 2 I C =6 A –30˚C A 0 .4 m A mp 0 .5 m 4 se T A 6 Te 0 .7 m 2 se 1mA (Ca 6 A 8 (Ca 1 .5 m 3 25˚C 2mA A 5˚C 3m 12 A Collector Current I C (A) 5m θ j- a ( ˚C/W) A Collector-Emitter Saturation Voltage V C E (s at) (V ) A m 1 20 Collector Current I C (A) 0.5typ –3 B C E (V CE =2V) 0m I B =0.3mA D C Cur r ent Gai n h F E 2.4±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) tstg (µs) V CE ( sa t ) – I B Characteristics (Typical) 8 0 ton (µs) IB2 (mA) 3 I C – V CE Characteristics (Typical) 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 IB1 (mA) VBB2 (V) 1.35±0.15 2.54 ■Typical Switching Characteristics (Common Emitter) 4.2±0.2 2.8 c0.5 ø3.3±0.2 a b V IB IC=2A, IB=3mA 10.1±0.2 4.0±0.2 ICBO 0.8±0.2 V ±0.2 Unit 120 3.9 Ratings External Dimensions FM20(TO220F) (Ta=25°C) Ratings 8.4±0.2 ■Electrical Characteristics VCBO (2.5kΩ)(200Ω) E Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose 16.9±0.3 ■Absolute maximum ratings (Ta=25°C) C B 13.0min Darlington Symbol Equivalent circuit Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) he at si nk Collector Curr ent I C (A) ite 0.1 fin Without Heatsink Natural Cooling 20 In 0.5 ith 1 W ms C s 10 50 D 1m 5 Maxim um Power Dissip ation P C (W) 10 Typ 100 Cut- off F req uency f T (MH Z ) 30 20 120 10 Without Heatsink 2 0 –0.05 –0.1 –0.5 –1 Emitter Current I E (A) 138 –5 –8 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SD1796 Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor IC 4 A hFE 10max mA VEB=6V IC=10mA 60±10 VCE=4V, IC=3A 2000min V 0.5 A VCE(sat) IC=3A, IB=10mA 1.5max V PC 25(Tc=25°C) W fT VCE=12V, IE=–0.2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 45 typ pF –55 to +150 °C 1.35±0.15 1.35±0.15 A 0 .6 m A 3 0. 5m A 0.4 mA 2 1 0 0.3mA 0 1 2 3 (V CE =2V) 3 4 2 I C= I C= 2 A I C =1 A 1 0 0.2 4 0.5 Collector-Emitter Voltage V C E (V) 4A I C= 3 A 1 5 10 50 0 100 (V C E =4V) 20000 0 1 Typ 5000 1000 500 100 10000 5000 125 ˚C ˚C 25 0˚C –3 1000 500 100 50 1 50 0.05 4 0.1 0.5 Collector Current I C (A) 1 4 5 1 V C B =10V I E =–2V 0.5 1 10 100 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics Transient Thermal Resistance DC Cur rent åGain h FE 10000 0.5 1 h FE – I C Temperature Characteristics (Typical) 20000 0.1 2 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 3 Base Current I B (mA) h FE – I C Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =10V) 30 10 s m 10 100 s Typ 60 40 20 s Collector Cur rent I C (A) 0m 80 DC Natural Cooling Silicone Grease Heatsink: Aluminum in mm 1m 10 5 Ma xim um Powe r Dissipat io n P C (W) 120 Cut- off F req uency f T (M H Z ) D C Cur r ent åGai n h FE I C – V BE Temperature Characteristics (Typical) p) A 0 .8 m 1.5typ e Tem 1.0m 4.0typ B C E (Cas =2 A Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) IB 0m Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) 4 1.0typ –10 10 tstg (µs) 125˚C –5 10 ton (µs) IB2 (mA) IB1 (mA) Collector Current I C (A) 3 2.4±0.2 2.2±0.2 θ j- a ( ˚ C/W) 10 30 VBB2 (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) VBB1 (V) ø3.3±0.2 a b 13.0min IB 4.2±0.2 2.8 c0.5 p) V(BR)CEO 10.1±0.2 p) IEBO V µA ase Tem V 6 10max ase Tem 60±10 VEBO Unit VCB=50V 25˚C (C VCEO Conditions –30˚C (C ICBO 4.0±0.2 V 0.8±0.2 Unit 60±10 External Dimensions FM20(TO220F) (Ta=25°C) Ratings ±0.2 Ratings IC (A) (3 kΩ)(1 5 0 Ω) E 3.9 Symbol VCBO RL (Ω) B 8.4±0.2 ■Electrical Characteristics Symbol VCC (V) C Application : Driver for Solenoid, Relay and Motor and General Purpose 16.9±0.3 ■Absolute maximum ratings (Ta=25°C) Tstg Equivalent circuit 1 0.5 Without Heatsink Natural Cooling 0.1 20 W ith In 150x150x2 1 00x 1 0 10 0x 2 fin ite he at si nk 50x50x2 Without Heatsink 2 0 –0.01 0.05 –0.1 –1 Emitter Current I E (A) –4 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 139 2SD2014 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1257) ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 75typ MHz °C COB VCB=10V, f=1MHz 45typ pF 3.9 V 1.35±0.15 1.35±0.15 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 30 10 3 10 –5 10 –10 1.0typ 4.0typ 1.5typ 0 0.3mA 1 0 2 3 0 4 1A 0.2 1 Collector-Emitter Voltage V C E (V) 5 10 50 (V C E =4V) 20000 10000 DC C urrent G ain h FE Typ 5000 1000 500 100 5000 125 1 ˚C ˚C 25 0˚C –3 1000 500 100 50 0.5 Transient Thermal Resistance 10000 0.1 50 30 0.03 4 0.1 Collector Current I C (A) 0.5 p) ase Tem ase Tem 1 2 1 4 5 1 0.5 1 5 10 50 100 500 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) p) p) e Tem 0 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 20000 Safe Operating Area (Single Pulse) P c – T a Derating (V C E =10V) 25 10 si nk Collector Cur rent I C (A) 2 at 0.1 0x he Without Heatsink Natural Cooling 1 00x 1 0 10 ite 0.5 150x150x2 fin 1 20 In 20 s s DC ith 40 m Natural Cooling Silicone Grease Heatsink: Aluminum in mm W Typ 60 0m s 80 10 s 0µ 100 10 30 5 1m M aximu m Power Dissipa tion P C (W) 120 Cut -off Fre quen cy f T ( MH Z ) DC Curr ent Gain h FE 0 100 Base-Emittor Voltage V B E (V) (V C E =4V) 0.03 1 Base Current I B (mA) h FE – I C Characteristics (Typical) 30 2 (Cas 2A 1 I C =4 A 3A –30˚C (C 1 2 125˚C 0. 4m A 2 3 Collector Current I C (A) 0. 5m A (V CE =4V) 4 θ j- a ( ˚ C/W) Collector Current I C (A) 0 .6 m A 3 I C – V BE Temperature Characteristics (Typical) 3 Collector-Emitter Saturation Voltage V C E (s at) (V ) A IB 0 .8 m Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) A =2 0m A m 1.0 2.4±0.2 2.2±0.2 VCC (V) 4 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.3±0.2 a b 25˚C (C –55 to +150 4.2±0.2 2.8 c0.5 4.0±0.2 V 0.8±0.2 120 ±0.2 Unit VCBO Tstg External Dimensions FM20(TO220F) (Ta=25°C) Ratings 8.4±0.2 ■Electrical Characteristics Ratings Symbol (3kΩ) (200Ω) E Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose 16.9±0.3 ■Absolute maximum ratings (Ta=25°C) C B 13.0min Darlington Symbol Equivalent circuit 50x50x2 Without Heatsink 2 0 –0.02 0.05 –0.05 –0.1 –0.5 –1 Emitter Current I E (A) 140 –4 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SD2015 Silicon NPN Triple Diffused Planar Transistor IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE(sat) IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ MHz °C COB VCB=10V, f=1MHz 40typ pF –55 to +150 Tstg 3.9 V 1.35±0.15 1.35±0.15 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 40 20 2 10 –5 10 –10 0.6typ 5.0typ 2.0typ 1 0 1 0 2 3 4 5 I C =4 A 1 3A 2A 1A 0 6 0.2 1 Collector-Emitter Voltage V C E (V) 5 10 50 (V C E =4V) 20000 Typ 1000 500 100 Transient Thermal Resistance DC C urrent G ain h FE 10000 5000 5000 12 5˚C 25 1000 500 ˚C –3 0˚C 100 0.03 0.1 0.5 mp) 0 1 1 50 0.03 0.05 4 0.1 Collector Current I C (A) 0.5 1 4 5 1 0.5 1 5 10 50 100 500 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 20000 Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 10 5 10 100ms Collector Cur rent I C (A) 50 40 Typ 30 20 1m m 30 s 0µ s DC 1 0.5 Without Heatsink Natural Cooling 0.1 10 –0.5 –1 Emitter Current I E (A) –4 W ith In 150x150x2 1 00x 1 0 10 0x 2 fin ite he at si nk 50x50x2 2 0.03 –0.05 –0.1 20 Without Heatsink 0.05 0 –0.02 Natural Cooling Silicone Grease Heatsink: Aluminum in mm s Ma xim um Powe r Dissipation P C (W) 60 Cut-o ff F requ ency f T (MH Z ) DC Curr ent Gain h FE 0 100 Base-Emittor Voltage V B E (V) (V C E =4V) 50 1 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 2 e Te 0.3mA 3 Cas 2 2 ˚C ( 0.4mA 4 125 0.5mA (V CE =4V) 3 θ j- a ( ˚ C/W) Collector Current I C (A) 0.6mA 3 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) 0.8mA A Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) IB m =1 2.4±0.2 2.2±0.2 VCC (V) 4 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.3±0.2 a b p) V(BR)CEO 4.2±0.2 2.8 c0.5 mp) IEBO V 10.1±0.2 ase Te V 6 µA ase Tem 120 VEBO 10max –30˚C (C VCEO Unit VCB=150V 4.0±0.2 ICBO 0.8±0.2 V Ratings ±0.2 150 External Dimensions FM20(TO220F) (Ta=25°C) Conditions 25˚C (C Unit VCBO Symbol 8.4±0.2 ■Electrical Characteristics Ratings (3kΩ) (500Ω) E Application : Driver for Solenoid, Relay and Motor and General Purpose 16.9±0.3 ■Absolute maximum ratings (Ta=25°C) C B 13.0min Darlington Symbol Equivalent circuit 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 141 2SD2016 Silicon NPN Triple Diffused Planar Transistor VCEO 200 V IEBO VEBO 6 V V(BR)CEO IC 3 A hFE Symbol Conditions VCB=200V 10max µA 10max mA VEB=6V V 200min IC=10mA 1000 to 15000 VCE=4V, IC=1A 0.5 A VCE(sat) IC=1A, IB=1.5mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=1A, IB=1.5mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 90typ MHz °C COB VCB=10V, f=1MHz 40typ pF –55 to +150 4.2±0.2 2.8 c0.5 ø3.3±0.2 a b V IB Tstg 10.1±0.2 4.0±0.2 ICBO 0.8±0.2 V ±0.2 200 Unit 3.9 Unit VCBO External Dimensions FM20(TO220F) (Ta=25°C) Ratings 8.4±0.2 ■Electrical Characteristics Ratings (2kΩ) (200Ω) E Application : Igniter, Relay and General Purpose 16.9±0.3 ■Absolute maximum ratings (Ta=25°C) C B 13.0min Darlington Symbol Equivalent circuit 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 2.4±0.2 2.2±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. B C E 0 0 1 2 3 4 0.2 1 Collector-Emitter Voltage V C E (V) (V C E =4V) 10000 DC Curr ent Gain h F E 1000 500 125 ˚C Transient Thermal Resistance 5000 5000 C 1000 25˚ 500 ˚C –55 100 50 100 0.5 1 3 10 0.03 0.1 0.5 f T – I E Characteristics (Typical) p) ase Tem –55˚C (C 2 1 3 5 1 0.5 1 5 10 50 100 500 1000 Time t(ms) Collector Current I C (A) Collector Current I C (A) mp) p) 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 10000 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 Ma xim um Powe r Dissipat io n P C (W) 80 Cut- off F req uency f T ( MH Z ) DC Cur rent Gain h FE 0 3 Base Current I B (mA) h FE – I C Characteristics (Typical) 50 0.03 1 12 5˚C 0 e Te 25˚C (Cas –5 5˚C 1 25˚C 1 Tem A se .3m 2 (Ca I B= 0 2 ˚C A 125 0.5m 2 (V CE =4V) 3 3 Collector Current I C (A) 1.5 1mA θ j - a ( ˚ C/W) Collector Current I C (A) 3m mA Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 A I C – V BE Temperature Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) 60 40 20 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 20 W ith In 150x150x2 1 00x 1 0 10 0x 2 fin ite he at si nk 50x50x2 Without Heatsink 2 0 –0.01 –0.05 –0.1 –0.5 Emitter Current I E (A) 142 –1 –3 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SD2017 Silicon NPN Triple Diffused Planar Transistor VCEO 250 V IEBO VEBO 20 V V(BR)CEO IC 6 A hFE VCE=2V, IC=2A 2000min Conditions Unit VCB=300V 100max µA VEB=20V 10max mA IC=25mA 250min 10.1±0.2 V IB 1 A VCE(sat) IC=2A, IB=2mA 1.5max PC 35(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–1A 20typ MHz °C COB VCB=10V, f=1MHz 65typ pF 3.9 V 1.35±0.15 1.35±0.15 –5 1mA 3 I B = 0 .4 2 mA 1 0 0 1 2 3 4 5 2 I C =8A 1 I C =3A 0 0.2 0.5 1 5 10 50 100 (V C E =2V) 10000 5000 D C Cur r ent Gai n h F E Typ 1000 500 100 1 1000 125 ˚C 25 ˚C –3 0˚C 500 100 50 30 0.03 5 6 0.1 1 0.5 f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics 1 56 5 1 0.5 0.3 1 5 10 Collector Current I C (A) Collector Current I C (A) 50 100 500 1000 Time t(ms) P c – T a Derating Safe Operating Area (Single Pulse) (V C E =12V) 30 35 20 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 10 25 s C) 1 150x150x2 at si nk Without Heatsink Natural Cooling 0.05 he 0.1 ite 0.5 20 fin Maximu m Power Dissi pation P C (W) C= In Collector Curr ent I C (A) (T ith 10 C 30 W 20 D. s 5 m 1m 10 Typ Cut- off F req uency f T ( MH Z ) DC Curr ent Gain h F E 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 10000 0.5 0 500 1000 Base Current I B (mA) (V C E =2V) 0.1 2 1 6 h FE – I C Characteristics (Typical) 50 30 0.03 3 I C =1A Collector-Emitter Voltage V C E (V) 5000 4 e Te mp) (Case Temp ) 4 5 –30˚C 2mA (Cas A 25˚C 4m 6 p) Collector Current I C (A) A (V C E =2V) 3 Tem 8m I C – V BE Temperature Characteristics (Typical) se A 5 3.0typ ˚C 4 m 20 Collector-Emitter Saturation Voltage V C E (s at) (V ) 6 A 16.0typ B C E V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) 0m 0.6typ –10 5 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) (Ca 10 tstg (µs) 125 2 ton (µs) IB2 (mA) IB1 (mA) VBB2 (V) Collector Current I C (A) 50 100 VBB1 (V) 2.4±0.2 2.2±0.2 θ j- a ( ˚ C/W) IC (A) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 Transient Thermal Resistance RL (Ω) ø3.3±0.2 a b ■Typical Switching Characteristics (Common Emitter) VCC (V) 4.2±0.2 2.8 c0.5 4.0±0.2 ICBO 0.8±0.2 V Ratings ±0.2 Unit 300 Symbol External Dimensions FM20(TO220F) (Ta=25°C) VCBO –55 to +150 E 8.4±0.2 ■Electrical Characteristics Ratings Tstg ( 4k Ω) Application : Driver for Solenoid, Relay and Motor and General Purpose 16.9±0.3 ■Absolute maximum ratings (Ta=25°C) C B 13.0min Darlington Symbol Equivalent circuit 100x100x2 10 50x50x2 Without Heatsink 0 –0.02 –0.05 –0.1 –0.5 –1 Emitter Current I E (A) –5 –6 0.02 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 300 2 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 143 2SD2045 Silicon NPN Triple Diffused Planar Transistor VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V(BR)CEO IC=10mA 120min 6(Pulse10) A hFE VCE=2V, IC=3A 2000min V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max V Tj 150 °C fT VCE=12V, IE=–1A 50typ MHz °C COB VCB=10V, f=1MHz 70typ pF 3.3 3.0 V IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 30 10 3 10 –5 3 –3 0.5typ 5.5typ 1.5typ 1 0 0 1 2 3 4 5 0.5 0.1 1 5 10 50 (V C E =2V) 10000 1000 500 5000 12 1000 500 5˚ Transient Thermal Resistance Typ D C Cur r ent Gai n h F E DC Curr ent Gain h F E C ˚C 25 C 0˚ –3 100 100 1 50 0.03 5 6 mp) Temp ) 1 0.1 0.5 1 56 5 1 0.5 0.2 1 10 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 10000 0.5 0 Base-Emittor Voltage V B E (V) (V C E =2V) 0.1 0 100 Base Current I B (mA) h FE – I C Characteristics (Typical) 50 0.03 p) 1 Collector-Emitter Voltage V C E (V) 5000 2 2A 0 6 4A 1 3 e Te I C =8A 4 em 2 (Cas 2 5 eT A 6 Cas .4 m B= 0 E ˚C ( I 3 A Weight : Approx 2.0g a. Part No. b. Lot No. 125 0.5m 4 3.35 (V C E =2V) 3 Collector Current I C (A) A C 1.5 I C – V BE Temperature Characteristics (Typical) θ j- a (˚C /W) Collector Current I C (A) 0.7m 4.4 B V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) A A 2m 5m 20mA 1 5 0.65 +0.2 -0.1 5.45±0.1 1.5 RL (Ω) mA 0.8 2.15 1.05 +0.2 -0.1 VCC (V) 6 1.75 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.3±0.2 a b (Case –55 to +150 3.45 ±0.2 25˚C Tstg 5.5±0.2 –30˚C IC 15.6±0.2 23.0±0.3 .VEBO 0.8±0.2 Unit ICBO 5.5 Ratings V 1.6 Conditions 120 9.5±0.2 Unit VCBO Symbol External Dimensions FM100(TO3PF) (Ta=25°C) Ratings Symbol (2.5kΩ)(200Ω) E Application : Driver for Solenoid, Motor and General Purpose ■Electrical Characteristics (Ta=25°C) C B 16.2 Darlington ■Absolute maximum ratings Equivalent circuit 100 1000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 50 20 120 Typ 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 Collector Cur rent I C (A) Cut -off Fre quen cy f T ( MH Z ) 20 nk 144 –5 –6 si –1 at –0.5 Emitter Current I E (A) 0.05 3 he 0 –0.05 –0.1 ite 0.1 30 fin Without Heatsink Natural Cooling 20 In 0.5 ith 1 40 W 40 s 60 1m 80 DC ms 5 10 100 M aximum Power Dissipa ti on P C ( W) 10 10 Without Heatsink 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SD2081 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1259) ICBO VCEO 120 V IEBO VEBO 6 V V(BR)CEO 10(Pulse15) A IC VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min hFE VCE=4V, IC=5A 2000min V A VCE(sat) IC=5A, IB=5mA 1.5max 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 2.0max V °C fT VCE=12V, IE=–0.5A 60typ MHz °C COB VCB=10V, f=1MHz 95typ pF 150 Tstg –55 to +150 3.9 1 PC 4.2±0.2 2.8 c0.5 ø3.3±0.2 a b V IB Tj 10.1±0.2 4.0±0.2 V Unit 0.8±0.2 Unit 120 Ratings ±0.2 Ratings VCBO External Dimensions FM20(TO220F) (Ta=25°C) Conditions 8.4±0.2 ■Electrical Characteristics Symbol (2kΩ) (200Ω) E Application : Driver for Solenoid, Motor and General Purpose 16.9±0.3 ■Absolute maximum ratings (Ta=25°C) C B 13.0min Darlington Symbol Equivalent circuit 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 2.4±0.2 2.2±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. B C E Collector-Emitter Saturation Voltage V C E (s at) (V ) I B =0.5mA 0 0 1 2 3 4 5 1A 2 0 6 0.2 0.5 Collector-Emitter Voltage V C E (V) 1 5 10 50 (V C E =4V) 20000 10000 DC Cur rent Gain h F E Typ 5000 1000 500 100 1 5 5000 12 5˚C 25 1000 Transient Thermal Resistance 10000 0.5 500 ˚C –3 0˚C 100 50 30 0.03 10 0.1 Collector Current I C (A) 0.5 p) 2 3 1 5 10 5 1 0.5 0.2 1 10 Collector Current I C (A) f T – I E Characteristics (Typical) p) 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 20000 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 100 1000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 120 30 30 10 100 DC si nk 0.1 at 20 he Without Heatsink Natural Cooling ite 1 0.5 20 fin 40 s In 60 5 s ith 80 m W Collector Curre nt I C (A) 10 1m Maximu m Power Dissipa tion P C (W) Typ Cut- off Fr equ ency f T ( MH Z ) DC Cur rent Gain h F E 0 100 200 Base Current I B (mA) h FE – I C Characteristics (Typical) 50 30 0.03 4 ase Tem 5A 1 ase Tem 5 I C =10A 25˚C (C 0. 7m A 6 –30˚C (C 1mA 2 mp) 10 8 e Te 2m A (Cas Collector Current I C (A) 3mA (V C E =4V) 10 Collector Current I C (A) 5mA 3 θ j - a ( ˚C/W) A m 50 1 A 0m I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) 125˚C I C – V CE Characteristics (Typical) 15 10 Without Heatsink 2 0 –0.05 –0.1 –0.5 –1 Emitter Current I E (A) –5 –10 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 145 2SD2082 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1382) Application : Driver for Solenoid, Motor and General Purpose Conditions V ICBO VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V(BR)CEO 16(Pulse26) A hFE IC=10mA 120min VCE=4V, IC=8A 2000min 15.6±0.2 V 23.0±0.3 V 1 A VCE(sat) IC=8A, IB=16mA 1.5max PC 75(Tc=25°C) W VBE(sat) IC=8A, IB=16mA 2.5max V Tj 150 °C fT VCE=12V, IE=–1A 20typ MHz °C COB VCB=10V, f=1MHz 210typ pF 3.3 1.05 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 40 5 8 10 –5 16 –16 0.6typ 7.0typ 1.5typ 0 0 1 2 3 4 5 0 6 0.2 0.5 1 5 10 50 (V C E =4V) 20000 DC Curr ent Gain h F E 5000 1000 500 5 10 125 ˚C 5000 25 Transient Thermal Resistance 10000 Typ 1 ˚C –30 ˚C 1000 500 100 0.02 16 0.5 1 f T – I E Characteristics (Typical) mp) e Te Cas 2 10 5 16 5 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) ) 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 30000 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) DC Curr ent Gain h F E 0 100 200 Base Current I B (mA) h FE – I C Characteristics (Typical) 100 0.2 ) 4 ˚C ( 4A –30 8A 1 8 mp I C =16A Collector-Emitter Voltage V C E (V) 10000 12 emp 10 2 Te I B =1m A (V CE =4V) 16 se 1. 5m A 3.35 Weight : Approx 2.0g a. Part No. b. Lot No. E (Ca 3mA C 5˚C Collector Current I C (A) 20 1.5 12 6mA 3 Collector Current I C (A) A 0.65 +0.2 -0.1 I C – V BE Temperature Characteristics (Typical) θ j - a (˚C /W) m 12 4.4 B V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) A 20 40m m 26 A I C – V CE Characteristics (Typical) +0.2 -0.1 5.45±0.1 1.5 VCC (V) 0.8 2.15 se T –55 to +150 1.75 (Ca Tstg 3.45 ±0.2 3.0 IB 5.5±0.2 ø3.3±0.2 a b 25˚C IC Unit 0.8±0.2 Unit 120 5.5 Ratings VCBO VEBO External Dimensions FM100(TO3PF) (Ta=25°C) Ratings 1.6 ■Electrical Characteristics Symbol (2kΩ) (100Ω) E 9.5±0.2 ■Absolute maximum ratings (Ta=25°C) C B 16.2 Darlington Symbol Equivalent circuit 100 1000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 80 50 0µ s DC 5 –1 Emitter Current I E (A) 146 –5 –10 –16 0.05 0.03 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 nk –0.5 si 0 –0.05 –0.1 40 at Without Heatsink Natural Cooling 0.1 he 0.5 ite 1 60 fin Collector Cur rent I C (A) 10 s In 10 1m ith 20 s W Cut- off F req uenc y f T (MH Z ) 10 m Ma xim um Powe r Dissipat io n P C (W) 10 Typ 20 3.5 0 Without Heatsink 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150 2SD2083 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1383) IEBO VEB=6V 10max mA 6 V V(BR)CEO 25(Pulse40) A hFE IC=25mA 120min VCE=4V, IC=12A 2000min V 2 A VCE(sat) IC=12A, IB=24mA 1.8max PC 120(Tc=25°C) W VBE(sat) IC=12A, IB=24mA 2.5max V Tj 150 °C fT VCE=12V, IE=–1A 20typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 340typ pF 5.45±0.1 IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 24 2 12 10 –5 24 –24 1.0typ 6.0typ 1.0typ 10 0 1 0 2 3 4 5 0 0.5 6 1 5 Collector-Emitter Voltage V C E (V) 10 50 100 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 20000 10000 DC Curr ent Gain h F E Typ 5000 1000 500 0.5 1 5 10 125 ˚C 5000 25 Transient Thermal Resistance 20000 100 0.2 ˚C ˚C –30 1000 500 100 0.02 40 0.5 p) 1 10 5 f T – I E Characteristics (Typical) mp) 1 2 2.2 40 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) ) em 0 Base-Emittor Voltage V B E (V) (V C E =4V) 100 1000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 120 100 100 1m s –10 0.2 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 nk Emitter Current I E (A) –5 si –1 at –0.5 he 0 –0.1 ite 0.5 fin Without Heatsink Natural Cooling 1 In 5 ith m Collector Cur rent I C (A) s 10 50 DC 10 100 W Ma xim um Powe r Dissipat io n P C (W) 50 Typ Cut -off Fre quency f T (M H Z ) DC Curr ent Gain h F E 0 500 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 10 e Te I B =1.5m A 12A 6A 1 eT 3m A 20 I C =25A 2 as 5mA 20 (C 8mA 5˚C 30 (V C E =4V) 25 12 Collector Current I C (A) 12mA 3 Collector Current I C (A) A 1.4 E I C – V BE Temperature Characteristics (Typical) θ j - a (˚C/W) 20m C Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) A 0.65 +0.2 -0.1 5.45±0.1 B RL (Ω) m 30 2 3 1.05 +0.2 -0.1 VCC (V) 40 ø3.2±0.1 V ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 2.0±0.1 b IB Tstg a 4.8±0.2 Cas IC 19.9±0.3 VEBO 1.8 V 15.6±0.4 9.6 5.0±0.2 µA 2.0 10max ˚C ( 120 VCB=120V emp VCEO Unit ICBO –30 V Ratings se T 120 External Dimensions MT-100(TO3P) (Ta=25°C) Conditions (Ca VCBO ■Electrical Characteristics Symbol (2kΩ) (100Ω) E 25˚C Unit 4.0 Ratings B 4.0max ■Absolute maximum ratings (Ta=25°C) C Application : Driver for Solenoid, Motor and General Purpose 20.0min Darlington Symbol Equivalent circuit 50 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 147 Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 380±50 V IEBO VEBO 6 V V(BR)CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA 1.5max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz 150 °C COB VCB=10V, f=1MHz 95typ pF –55 to +150 °C Tstg 4.2±0.2 2.8 c0.5 ø3.3±0.2 a b 13.0min IB Tj 10.1±0.2 4.0±0.2 380±50 Unit 0.8±0.2 Unit VCBO External Dimensions FM20(TO220F) (Ta=25°C) Ratings 3.9 Ratings ±0.2 ■Electrical Characteristics Symbol (1.5kΩ)(100Ω) E 8.4±0.2 ■Absolute maximum ratings (Ta=25°C) B Application : Ignitor, Driver for Solenoid and Motor, and General Purpose 16.9±0.3 Built-in Avalanche Diode for Surge Absorbing Darlington C 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 2.4±0.2 2.2±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. B C E 4 0 6 0.2 Collector-Emitter Voltage V C E (V) 0.5 1 5 10 50 10000 (V C E =2V) 5000 1000 500 100 50 12 5˚ 1000 C 25 500 Transient Thermal Resistance DC Cur rent Gain h F E Typ ˚C –5 5˚ C 100 50 0.1 0.5 1 5 20 0.02 10 0.1 1.0 0.5 f T – I E Characteristics (Typical) Temp 2.4 5 10 5 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) 2.0 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 10000 10 0.02 1.0 Base-Emittor Voltage V B E (V) (V C E =2V) 5000 0 Base Current I B (mA) h FE – I C Characteristics (Typical) DC Cur rent Gain h F E 0 100 200 ) p) 25˚ 12 2 0 θ j- a ( ˚C/W) 0 (Case 1A –30˚C 1 5 p) I C =7A 5A 3A em I B =1 mA Tem 5 2 eT 2mA ase 4mA (V CE =4V) 10 3 A 20m mA 18 as A (C m 5˚C Collector Current I C (A) 0 15 Collector Current I C (A) 10 I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) 90mA 60mA Collector Current I C (A) 120mA C (C I C – V CE Characteristics (Typical) 100 1000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 40 20 40 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 10 M aximum Po wer Dissipation P C (W) Collector Curre nt I C (A) Emitter Current I E (A) 148 1 5 0.01 1 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 nk 0.5 150x150x2 10 si 01 at 0.05 he 0 0.01 ite 0.05 20 fin Without Heatsink Natural Cooling In 0.1 ith 1 0.5 30 W Cu t-off Fre quen cy f T (M H Z ) 1ms s 10 C 0m D ms 10 5 30 20 10 Typ 100x100x2 50x50x2 2 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 Equivalent circuit 2SD2389 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1559) V VCEO 150 VEBO IC Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max 19.9±0.3 Ratings a 4.8±0.2 2.0±0.1 ø3.2±0.1 b V IB 1 A VCE(sat) PC 80(Tc=25°C) W VBE(sat) IC=6A, IB=6mA 3.0max V Tj 150 °C fT VCE=12V, IE=–1A 80typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF Tstg 15.6±0.4 9.6 1.8 160 E External Dimensions MT-100(TO3P) (Ta=25°C) Conditions 5.0±0.2 VCBO Symbol 2.0 Unit 4.0 ■Electrical Characteristics (Ta=25°C) Ratings Symbol 2 4.0max ■Absolute maximum ratings (7 0 Ω) Application : Audio, Series Regulator and General Purpose 20.0min Darlington C B 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 60 10 6 10 –5 6 –6 0.6typ 10.0typ 0.9typ 0 2 0 4 0 6 0.2 0.5 1 Collector-Emitter Voltage V C E (V) 5 10 50 0 100 200 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 40000 50000 5000 Transient Thermal Resistance DC C urrent G ain h FE Typ 10000 25˚C 10000 5000 –30˚C 1000 1 5 500 0.2 8 0.5 Collector Current I C (A) (Cas e Te mp) mp) 1 2 1 5 θ j-a – t Characteristics 4 1 0.5 0.2 8 1 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 120 80 20 m 10 Typ s 5 40 at si nk Collect or Cur ren t I C (A) he Without Heatsink Natural Cooling ite 0.1 20 fin 0.5 In 40 1 60 ith 60 C W D 80 s 0m 100 M aximum Power Dissipa ti on P C (W) 10 10 Cut- off F req uenc y f T (MH Z ) DC C urrent G ain h FE 125˚C 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 1000 02 2 Base Current I B (mA) h FE – I C Characteristics (Typical) e Te I C =4A 1 4 (Cas I B =0.3mA I C =6A –30˚C 2 I C =8A mp) 0.5mA 6 25˚C 4 2 e Te 0.8 mA Cas 1.0m A 6 (V CE =4V) 8 3 ˚C ( 1. 3m A 125 A Collector Current I C (A) 1.5m 1.4 E I C – V BE Temperature Characteristics (Typical) θ j - a ( ˚ C/W) 5m 2. A 0m A 1. C Weight : Approx 2.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) A 8m Collector-Emitter Saturation Voltage V C E (sa t) (V ) Collector Current I C (A) 8 2. 10mA I C – V CE Characteristics (Typical) 5.45±0.1 B 20 0.05 0 –0.02 –0.1 –1 Emitter Current I E (A) –8 0.03 3 Without Heatsink 5 10 50 100 Collector-Emitter Voltage V C E (V) 150 200 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 149 Equivalent circuit 2SD2390 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1560) VCB=160V 100max µA V IEBO VEB=5V 100max µA V V VCEO 150 5 V V(BR)CEO IC=30mA 150min IC 10 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA 2.5max PC 100(Tc=25°C) W VBE(sat) IC=7A, IB=7mA 3.0max V Tj 150 °C fT VCE=12V, IE=–2A 55typ MHz –55 to +150 °C COB a 4.8±0.2 2.0±0.1 ø3.2±0.1 b V pF 95typ VCB=10V, f=1MHz 19.9±0.3 VEBO Tstg 15.6±0.4 9.6 1.8 ICBO 160 2.0 Unit VCBO E External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit 5.0±0.2 Symbol Conditions Ratings 2 4.0max Symbol 4.0 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) (7 0 Ω) Application : Audio, Series Regulator and General Purpose 20.0min Darlington C B 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 70 10 7 10 –5 7 –7 0.5typ 10.0typ 1.1typ 0 0 2 4 2 0 6 0.2 0.5 1 Collector-Emitter Voltage V C E (V) 5 10 50 0 100 200 (V C E =4V) 70000 50000 10000 5000 10000 25˚C 5000 –30˚C Transient Thermal Resistance D C Cur r ent Gai n h F E D C Cur r ent Gai n h F E 125˚C Typ 1000 5 500 0.2 10 0.5 Collector Current I C (A) mp) mp) e Te 2.5 1 5 10 3 1 0.5 0.1 1 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 40000 1 1 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 0 Base Current I B (mA) h FE – I C Characteristics (Typical) 1000 02 4 e Te I C =5A (Cas I C =7A 1 6 –30˚C I B =0.4mA 2 I C =10A p) 0.6mA 4 2 (Cas 0.8mA Tem 6 8 25˚C 1m A se 1.2 mA (Ca Collector Current I C (A) 8 (V C E =4V) 10 3 125 1. 5m A Collector Current I C (A) A I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚ C/W) 2m 1.4 E Weight : Approx 2.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) 10 m A 2. 5m A 10 C ˚C I C – V CE Characteristics (Typical) 5.45±0.1 B Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 80 10 100 10 100 30 50 at si nk Collect or Cur ren t I C (A) he Without Heatsink Natural Cooling 20 ite 0.5 fin 1 In 40 s ith 60 0m W Cut- off F req uency f T (M H Z ) s Ma xim um Powe r Dissipat io n P C (W) m Typ 10 DC 5 0.1 0 –0.02 –0.1 –1 Emitter Current I E (A) 150 –10 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 C Equivalent circuit 2SD2401 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1570) ■Electrical Characteristics Unit VCBO 160 V ICBO VCB=160V 100max µA VCEO 150 V IEBO VEB=5V 100max µA V Ratings Unit VEBO 5 V V(BR)CEO IC=30mA 150min IC 12 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA 2.5max V IC=7A, IB=7mA 3.0max V 24.4±0.2 150(Tc=25°C) W VBE(sat) Tj 150 °C fT VCE=12V, IE=–2A 55typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 95typ pF 9 a b 2 3 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 70 10 7 10 –5 7 –7 0.5typ 10.0typ 1.1typ 0 2 0 4 0 6 0.2 0.5 1 5 10 50 (V C E =4V) Typ 10000 5000 125˚C 10000 25˚C 5000 –30˚C Transient Thermal Resistance DC Cur rent Gain h F E 70000 50000 1000 5 600 0.2 10 12 0.5 Collector Current I C (A) ) mp) emp e Te Cas 2 2.6 1 5 10 12 2 1 0.5 0.1 1 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) se T 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 40000 Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 80 10 160 s ite he 80 at si nk Without Heatsink Natural Cooling 20 fin 0.5 In 1 120 ith Maximu m Power Dissipa tion P C (W) 0m W 40 DC s Typ 60 10 5 m Collector Curr ent I C (A) 10 100 Cu t-of f Fr eque ncy f T (MH Z ) DC Cur rent Gain h F E 0 Base-Emittor Voltage V B E (V) (V C E =4V) 1 0 100 200 Base Current I B (mA) h FE – I C Characteristics (Typical) 0.5 p) 2 Collector-Emitter Voltage V C E (V) 1000 02 4 ˚C ( 2 I C =5A 1 6 –30 I B =0.4mA I C =7A Tem 0.6mA 4 I C =10A (Ca 0.8mA 8 se 6 2 25˚C 1.0 mA (Ca 1.2m A 8 10 ˚C 1.5 mA θ j- a ( ˚C/W) Collector Current I C (A) A (V C E =4V) 12 125 2 .0 m 10 E I C – V BE Temperature Characteristics (Typical) 3 Collector Current I C (A) mA C Weight : Approx 18.4g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 10m 2.5 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 12 2.1 2-ø3.2±0.1 PC Tstg 6.0±0.2 36.4±0.3 7 Conditions 21.4±0.3 Symbol E External Dimensions MT-200 (Ta=25°C) Ratings Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) (7 0 Ω ) Application : Audio, Series Regulator and General Purpose 20.0min Darlington B 40 0.1 0 –0.02 –0.1 –1 Emitter Current I E (A) –10 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 150 200 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 151 Equivalent circuit 2SD2438 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1587) Application : Audio, Series Regulator and General Purpose ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max 150 VEBO IC A PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=6mA 3.0max V Tj 150 °C fT VCE=12V, IE=–1A 80typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF 1.75 16.2 Tstg 3.0 1 VCE(sat) 1.05 +0.2 -0.1 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 ( mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 60 10 6 10 –2 6 –6 0.6typ 10.0typ 0.9typ 2 I B =0.3mA 0 2 0 4 I C =4A 1 0 6 0.2 0.5 Collector-Emitter Voltage V C E (V) 1 5 10 50 0 100 200 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 40000 50000 Typ 10000 5000 Transient Thermal Resistance DC C urrent G ain h FE 125˚C DC C urrent G ain h FE 0 1 25˚C 10000 5000 –30˚C 1000 1 5 500 0.2 8 0.5 Collector Current I C (A) 2.5 1 5 8 θ j-a – t Characteristics 4 1 0.5 0.2 1 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 2 Base Current I B (mA) h FE – I C Characteristics (Typical) 1000 02 4 ) Temp ) I C =6A Temp I C =8A (Case 0.5mA 6 mp) 4 2 e Te 0.8 mA (V C E =4V) 8 3 25˚C 1.0m A 6 Weight : Approx 6.5g a. Part No. b. Lot No. E (Cas 1. 3m A C 125˚C A Collector Current I C (A) 1.5m 3.35 1.5 I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) 5m 2. A 0m A 2. 10mA 1. Collector-Emitter Saturation Voltage V C E (sa t) (V ) Collector Current I C (A) 8 4.4 B V CE ( sat ) – I B Characteristics (Typical) A 8m 0.65 +0.2 -0.1 5.45±0.1 1.5 VCC (V) 0.8 2.15 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) I C – V CE Characteristics (Typical) 3.45 ±0.2 ø3.3±0.2 a b V IB 5.5±0.2 5.5 VCEO 15.6±0.2 (Case V 23.0±0.3 160 0.8±0.2 Unit VCBO External Dimensions FM100(TO3PF) (Ta=25°C) 3.3 Symbol Ratings Unit 1.6 ■Electrical Characteristics Conditions Ratings Symbol Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 120 80 20 10 m Collect or Cur ren t I C (A) Cut- off F req uenc y f T (MH Z ) 152 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 40 nk Emitter Current I E (A) –8 si –1 at –0.1 0.05 3 he 0.1 0 –0.02 ite Without Heatsink Natural Cooling 20 fin 40 1 0.5 60 In 60 s ith 80 0m W DC 5 M aximum Power Dissipa ti on P C (W) 10 100 s 10 Typ E –30˚C ■Absolute maximum ratings (Ta=25°C) (7 0 Ω ) 9.5±0.2 Darlington C B 20 3.5 0 Without Heatsink 0 50 100 Ambient Temperature Ta(˚C) 150 Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1588) V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA 3.0max V Tj 150 °C fT VCE=12V, IE=–2A 55typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 95typ pF 3.3 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 70 10 7 10 –5 7 –7 0.5typ 10.0typ 1.1typ 0.6mA 4 I B =0.4mA 2 0 2 0 4 2 I C =10A I C =7A I C =5A 1 0 6 0.2 0.5 1 5 10 50 h FE – I C Characteristics (Typical) 1 (V C E =4V) 10000 5000 125˚C 10000 25˚C 5000 –30˚C Transient Thermal Resistance DC Curr ent Gain h F E Typ 1000 5 500 0.2 10 0.5 Collector Current I C (A) 2.5 1 5 10 3 1 0.5 0.1 1 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 70000 50000 1 0 Base-Emittor Voltage V B E (V) (V C E =4V) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 80 30 10 m 10 s s he 40 at si nk Without Heatsink Natural Cooling 20 ite 0.5 fin 1 60 In 40 5 0m ith Typ 60 DC 10 W Collecto r Cur ren t I C (A) 80 Ma xim um Powe r Dissipation P C ( W) 100 Cut- off Fr equ ency f T (MH Z ) DC Curr ent Gain h FE 0 100 200 Base Current I B (mA) 40000 0.5 4 2 Collector-Emitter Voltage V C E (V) 1000 02 6 p) 0.8mA Tem 6 8 se 1m A (V C E =4V) 10 3 (Ca 1.2 mA 3.35 Weight : Approx 6.5g a. Part No. b. Lot No. E ˚C Collector Current I C (A) 8 C 125 1. 5m A Collector Current I C (A) A 0.65 +0.2 -0.1 1.5 I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚ C/ W) 2m 4.4 B V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 10 m A 2. 5m A 10 +0.2 -0.1 5.45±0.1 1.5 VCC (V) 0.8 2.15 1.05 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) I C – V CE Characteristics (Typical) 1.75 16.2 Tstg 3.0 1 VCE(sat) 3.45 ±0.2 ø3.3±0.2 a b V IB 5.5±0.2 mp) VEBO 0.8±0.2 µA 5.5 100max 23.0±0.3 VCB=160V 1.6 150 ICBO mp) VCEO Unit e Te V Ratings e Te 160 External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Symbol (Cas VCBO ■Electrical Characteristics (Cas Unit –30˚C Ratings Symbol E Application : Audio, Series Regulator and General Purpose 25˚C ■Absolute maximum ratings (Ta=25°C) (7 0 Ω ) 9.5±0.2 Darlington C B 20 0.1 0 –0.02 –0.1 –1 Emitter Current I E (A) –10 0.05 3 Without Heatsink 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 50 100 150 Ambient Temperature Ta(˚C) 153 Equivalent circuit 2SD2557 Silicon NPN Triple Diffused Planar Transistor Unit VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V(BR)CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 V a 4.8±0.2 2.0±0.1 ø3.2±0.1 b IB 2 A VCE(sat) IC=1A, IB=5mA 1.5max V PC 70(Tc=25°C) W fT VCE=10V, IE=–0.5A 15typ MHz Tj 150 °C COB VCB=10V, f=1MHz 110typ pF –55 to +150 °C Tstg 15.6±0.4 9.6 1.8 Ratings ICBO 5.0±0.2 Conditions V 2.0 Unit 200 19.9±0.3 Ratings Symbol External Dimensions MT-100(TO3P) (Ta=25°C) 4.0 ■Electrical Characteristics VCBO Symbol (3.2kΩ)(450Ω) E 2 4.0max ■Absolute maximum ratings (Ta=25°C) B Application : Series Regulator and General Purpose 20.0min Darlington C 3 1.05 +0.2 -0.1 5.45±0.1 0.65 +0.2 -0.1 5.45±0.1 B C 1.4 E Weight : Approx 6.0g a. Part No. b. Lot No. Collector to Emitter Saturation Voltage V C E (sat) (V ) 0 0 2 4 6 0 0.5 0.2 1 0 5 (V C E =5V) DC Cur rent Gain h FE 8000 5000 ˚C 125 C 25˚ –30 ˚C 100 50 10 5 0.02 0.1 0.5 1 5 5.0 1.0 0.5 0.3 1 5 10 70 ite 40 he at si nk 0.1 fin Without Heatsink Natural Cooling In 0.5 50 ith 1 60 W M aximum Po wer Dissipat io n P C (W) s 5 1m 10 m 50 s 10 m s 0m s 10 Co lle ctor Cu rr ent I C (A) 500 1000 2000 P c – T a Derating 30 30 20 10 Without Heatsink 10 50 100 Collector-Emitter Voltage V C E (V) 154 50 100 Time t(ms) Safe Operating Area (Single Pulse) 0.05 5 2.5 θ j-a – t Characteristics Collector Current I C (A) f T – I E Characteristics (Typical) 2 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 500 p) 1 Collector Current Ic(A) 1000 ase Tem em p) mp) 0 –30˚C (C 2 eT C 1 Collector-Emitter Voltage V C E (V) h FE – I C Characteristics (Typical) 0˚ e Te –3 1 3 as A 1 25 ˚C (Cas 0 .3 m A 2 (C 0 .6 m 2 A 25˚C 1 .2 m 3 4 12 mA Collector Current I C (A) 2.5 θ j- a (˚C /W) Collector Current I C (A) mA (V C E =4V) 5 Transient Thermal Resistance 10 4 3 C 50 mA 5˚ 2 A (IC/IB=1000) 12 I B = 1 .0 A 5 m 50 I C – V BE Temperature Characteristics (Typical) V CE (sat) – I C Temperature Characteristics (Typical) 5˚C I C – V CE Characteristics (Typical) 300 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 Equivalent circuit 2SD2558 Silicon NPN Triple Diffused Planar Transistor ICBO VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V(BR)CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 Unit VCE(sat) IC=1A, IB=5mA 1.5max V W fT VCE=10V, IE=–0.5A 15typ MHz Tj 150 °C COB VCB=10V, f=1MHz 110typ pF ø3.3±0.2 a b 1.75 °C 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 1.5 4.4 B 1 2 4 6 0 0.5 0.2 1 0 5 0 (V C E =5V) D C Cur r ent Gai n h F E 8000 5000 ˚C 125 C 25˚ –30 ˚C 100 50 10 5 0.02 0.1 0.5 1 5 5.0 1.0 0.5 0.3 1 5 10 50 100 500 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating 60 30 1m s 10 40 In fin ite he at si nk Without Heatsink Natural Cooling ith 1 0.5 W 5 20 0.1 0.05 5 2.5 θ j-a – t Characteristics Collector Current I C (A) f T – I E Characteristics (Typical) 2 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 500 p) 1 Collector Current I C (A) 1000 ase Tem 2 1 Collector-Emitter Voltage V C E (V) h FE – I C Characteristics (Typical) C Ma ximum Po we r Dissipatio n P C (W) 0 Collecto r Cur ren t I C (A) 0 125˚ 1 em p) mp) A eT 0 .3 m 2 5 ˚C 3 e Te A – 3 0 ˚C as 0 .6 m 2 (Cas A 4 (C 2 1 .2 m (V C E =4V) 25˚C 3 mA E 12 2.5 Collector Current I C (A) mA 3.35 Weight : Approx 6.5g a. Part No. b. Lot No. 5 θ j - a (˚C /W) 10 4 Collector Current I C (A) mA (IC/IB=1000) Transient Thermal Resistance 50 Base to Emitter Saturation Voltage V B E (sat)(V ) A I B = 1 .0 25 C 0.65 +0.2 -0.1 I C – V BE Temperature Characteristics (Typical) V BE (sat) – I C Temperature Characteristics (Typical) 3 1.5 5˚C I C – V CE Characteristics (Typical) 5 A 0m 0.8 2.15 –30˚C (C –55 to +150 3.45 ±0.2 3.0 A 60(Tc=25°C) 5.5±0.2 3.3 2 PC Tstg 15.6±0.2 V IB 0.8±0.2 Conditions V 5.5 Unit 200 1.6 Ratings VCBO Symbol External Dimensions FM100(TO3PF) (Ta=25°C) 9.5±0.2 ■Electrical Characteristics Ratings Symbol (3.2kΩ)(450Ω) E Application : Series Regulator and General Purpose 23.0±0.3 ■Absolute maximum ratings (Ta=25°C) B 16.2 Darlington C Without Heatsink 10 50 100 Collector-Emitter Voltage V C E (V) 300 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 155 Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647) 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) 150min 5000min∗ VCE(sat) IC=10A, IB=10mA 2.5max W VBE(sat) IC=10A, IB=10mA 3.0max V 150 °C fT VCE=12V, IE=–2A 70typ MHz –55to+150 °C COB VCB=10V, f=1MHz 120typ pF Tj Tstg 19.9±0.3 IC=30mA VCE=4V, IC=10A a ø3.2±0.1 b V 2 3 1.05 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 40 4 10 10 –5 10 –10 0.8typ 4.0typ 1.2typ 5 0 I B =0.3mA 0 2 4 I C =.10A 1 I C =.5A 0 0.2 6 0.5 1 Collector-Emitter Voltage V C E (V) 5 10 50 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 50000 Typ 10000 5000 1000 12 5˚C Transient Thermal Resistance DC Curr ent Gain h F E 50000 DC Curr ent Gain h F E 10000 25 5000 –3 ˚C 0˚C 1000 1 5 10 500 02 15 0.5 0 f T – I E Characteristics (Typical) 1 5 10 15 1.0 0.5 0.1 1 10 P c – T a Derating m 0m ite he at si nk Without Heatsink Natural Cooling fin 1 0.5 In 5 100 ith s Collecto r Cur ren t I C (A) s 10 DC W Maxim um Power Dissipa tion P C (W) 10 20 50 0.1 –0.5 –1 Emitter Current I E (A) 156 –5 –10 1000 2000 130 10 40 100 Time t(ms) 50 60 2.2 3.0 Safe Operating Area (Single Pulse) 80 2 θ j-a – t Characteristics (V C E =12V) 0 –0.02 –0.05 –01 1 Collector Current I C (A) Collector Current I C (A) Cut- off F req uency f T ( MH Z ) ) 0 100 200 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 5 Base Current I B (mA) h FE – I C Characteristics (Typical) 500 02 emp I C =.15A 10 (Cas 0.5mA 2 eT Collector Current I C (A) 0. 8m A 10 Cas 1. 0m A 25˚C mA 125 1.5 (V CE =4V) 15 3 Collector Current I C (A) 2m A I C – V BE Temperature Characteristics (Typical) θ j- a (˚ C/W) 50mA 3mA 1.4 E Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 10mA C ˚C ( I C – V CE Characteristics (Typical) 15 5.45±0.1 B VCC (V) 0.65 +0.2 -0.1 mp) V 15 e Te 5 IC mp) VEBO 2.0±0.1 (Cas 150 4.8±0.2 –30˚C VCEO 15.6±0.4 9.6 e Te V 1.8 VCB=150V 150 2.0 Unit ICBO VCBO Symbol 0.05 3 5 10 E External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit 5.0±0.2 ■Electrical Characteristics Conditions Ratings 4.0 Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) (7 0 Ω ) Application : Audio, Series Regulator and General Purpose 20.0min Darlington C B 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 Equivalent circuit 2SD2561 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1648) ICBO Unit VCB=150V 100max µA 24.4±0.2 100max µA 150min V VCE=4V, IC=10A 5000min∗ IC=10A, IB=10mA 2.5max V IC=10A, IB=10mA 3.0max V fT VCE=12V, IE=–2A 70typ MHz COB VCB=10V, f=1MHz 120typ pF A hFE 1 A VCE(sat) PC 200(Tc=25°C) W VBE(sat) Tj 150 °C –55 to +150 °C 7 17 IB 9 a b 2 3 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 40 4 10 10 –5 10 –10 0.8typ 4.0typ 1.2typ 5 0 I B =0.3mA 2 0 4 I C =.10A 1 I C =.5A 0 0.2 6 0.5 1 Collector-Emitter Voltage V C E (V) 5 10 50 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 50000 10000 5000 1000 12 5˚C Transient Thermal Resistance D C Cur r ent Gai n h F E 50000 Typ 10000 25 5000 –30 ˚C ˚C 1000 1 5 10 500 02 17 0.5 Collector Current I C (A) 0 1 1 5 10 17 1 0.5 0.1 1 10 200 120 ite he at si nk Without Heatsink Natural Cooling fin 1 0.5 In 5 160 ith Ma ximum Po we r Dissipatio n P C (W) s W Collector Cur rent I C (A) s 0m m DC 10 10 10 20 1000 2000 P c – T a Derating 50 40 100 Time t(ms) Safe Operating Area (Single Pulse) 60 2.6 2 (V C E =12V) 80 2 θ j-a – t Characteristics Collector Current I C (A) f T – I E Characteristics (Typical) Cut-o ff Fr equ ency f T ( MH Z ) D C Cur r ent Gai n h F E 0 100 200 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 5 Base Current I B (mA) h FE – I C Characteristics (Typical) 500 02 10 p) I C =.15A Tem 0.5mA 2 se 10 (Ca 0. 8m A 15 125 Collector Current I C (A) 1. 0m A (V C E =4V) 17 Collector Current I C (A) 1 .5 m A mA I C – V BE Temperature Characteristics (Typical) 3 θ j- a ( ˚C/W) A 2 Collector-Emitter Saturation Voltage V C E (s a t) (V ) 15 3m 50mA 17 E Weight : Approx 18.4g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) 10mA C ˚C I C – V CE Characteristics (Typical) 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 mp) IC 2-ø3.2±0.1 e Te V(BR)CEO (Cas IEBO V 2.1 –30˚C V 5 6.0±0.2 36.4±0.3 VEB=5V 150 VEBO Tstg Ratings IC=30mA VCEO E External Dimensions MT-200 (Ta=25°C) Conditions mp) V Symbol e Te 150 VCBO ■Electrical Characteristics (Cas Unit 25˚C Ratings 21.4±0.3 Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) (7 0 Ω ) Application : Audio, Series Regulator and General Purpose 20.0min Darlington C B 80 40 0.1 0 –0.02 –0.1 –1 Emitter Current I E (A) –10 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 157 Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649) 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C fT VCE=12V, IE=–2A 70typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 120typ pF 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 40 4 10 10 –5 10 –10 0.8typ 4.0typ 1.2typ 5 0 I B =0.3mA 0 2 4 I C =.15A I C =.10A 1 I C =.5A 0 0.2 6 0.5 1 Collector-Emitter Voltage V C E (V) 5 10 50 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 50000 Typ 10000 5000 1000 12 5˚C Transient Thermal Resistance DC C urrent G ain h FE 50000 DC C urrent G ain h FE 0 100 200 10000 25 5000 –30 ˚C ˚C 1000 1 0 1 5 10 500 02 15 0.5 1 f T – I E Characteristics (Typical) 2.2 5 10 15 θ j-a – t Characteristics 3.0 1.0 0.5 0.1 1 10 100 Collector Current I C (A) Collector Current I C (A) 2 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 5 Base Current I B (mA) h FE – I C Characteristics (Typical) 500 02 10 ) 2 emp 0.5mA (V CE =4V) 15 3 eT Collector Current I C (A) 0. 8m A 10 E Cas 1. 0m A C ˚C ( 1.5 mA 3.35 Weight : Approx 6.5g a. Part No. b. Lot No. 125 A Collector Current I C (A) 2m 0.65 +0.2 -0.1 1.5 I C – V BE Temperature Characteristics (Typical) θ j- a (˚C /W ) 50mA 15 3mA 4.4 B V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 10mA +0.2 -0.1 5.45±0.1 1.5 VCC (V) 0.8 2.15 1.05 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) I C – V CE Characteristics (Typical) 1.75 mp) Tstg ø3.3±0.2 a b V IB 3.0 IC=30mA VCE=4V, IC=10A mp) hFE e Te V(BR)CEO A (Cas V 15 –30˚C 5 IC 3.3 VEBO 3.45 ±0.2 e Te 150 5.5±0.2 (Cas VCEO 15.6±0.2 25˚C V 0.8±0.2 VCB=150V 150 5.5 ICBO VCBO 1.6 Unit Symbol External Dimensions FM100(TO3PF) (Ta=25°C) Ratings Unit 9.5±0.2 ■Electrical Characteristics Conditions Ratings Symbol E Application : Audio, Series Regulator and General Purpose 23.0±0.3 ■Absolute maximum ratings (Ta=25°C) (7 0 Ω ) 16.2 Darlington C B 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 80 100 50 ite he at si nk Without Heatsink Natural Cooling 60 fin 1 0.5 In Ma ximum Po we r Dissipatio n P C ( W) 5 80 ith Collecto r Cur ren t I C ( A) s W Cut-o ff Fr eque ncy f T (MH Z ) s 20 0m m 40 DC 10 10 10 60 40 20 0.1 0 –0.02 –0.05 –01 –0.5 –1 Emitter Current I E (A) 158 –5 –10 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2SD2589 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1659) VCB=110V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 110min V 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 50(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–0.5A 60typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 110 V VCEO 110 VEBO IC Tstg 10.2±0.2 V pF 55typ 2.0±0.1 ø3.75±0.2 a b 1.35 0.65 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 2.5 ■Typical Switching Characteristics (Common Emitter) 2.5 1.4 B C E VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 30 6 5 10 –5 5 –5 0.8typ 6.2typ 1.1typ I C – V CE Characteristics (Typical) 4.8±0.2 3.0±0.2 ICBO VCBO 16.0±0.7 Unit Symbol External Dimensions FM-25(TO220) (Ta=25°C) Ratings Unit 8.8±0.2 ■Electrical Characteristics Conditions Ratings Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio, Series Regulator and General Purpose 12.0min Darlington Weight : Approx 2.6g a. Part No. b. Lot No. I C – V BE Temperature Characteristics (Typical) I B =0.1mA 0 2 0 4 I C =3A 0 6 0.1 0.5 1 5 10 50 h FE – I C Characteristics (Typical) (VCE=4V) 10000 5000 1000 500 1 5 6 Collector Current I C (A) 10000 12 5000 Transient Thermal Resistance DC Curr ent Gain h F E Typ 5˚C 25 ˚C –3 0˚C 1000 500 100 0.02 0.1 0.5 ) Temp ) mp) 2 2.5 1 56 5 1 0.5 0.4 1 10 Collector Current I C (A) f T – I E Characteristics (Typical) 100 1000 2000 Time t(ms) P c – T a Derating Safe Operating Area (Single Pulse) (VCE=12V) 50 80 60 at si nk Emitter Current I E (A) –6 he –1 30 ite –0.1 fin 0 –0.02 In 20 ith 40 40 W Maximu m Power Dissip ation P C ( W) Typ Cut -off Fre quen cy f T (MH Z ) DC C urrent G ain h FE 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 40000 0.5 0 Base-Emittor Voltage V B E (V) (VCE=4V) 40000 0.1 0 100 Base Current I B (mA) Collector-Emitter Voltage V C E (V) 200 0.02 2 (Case 1 –30˚C 2 I C =5A 4 Temp 0.2mA 2 e Te 4 (Case Collector Current I C (A) 0.3 mA (VCE=4V) 6 3 25˚C 0. 4m A (Cas A 125˚C 5m Collector Current I C (A) 0. θ j - a ( ˚C/W) 5mA 6 Collector-Emitter Saturation Voltage V C E (s at) (V) 1m A V CE ( sa t ) – I B Characteristics (Typical) 20 10 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 159 Equivalent circuit 2SD2641 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685) Unit V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 IC 6 V V(BR)CEO IC=30mA 110min V A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–2A 60typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 55typ pF Tstg 15.6±0.4 9.6 1.8 Ratings a 4.8±0.2 5.0±0.2 110 E External Dimensions MT-100(TO3P) (Ta=25°C) Conditions Symbol 2.0 VCBO ■Electrical Characteristics 4.0 Unit 19.9±0.3 Ratings Symbol 2.0±0.1 ø3.2±0.1 b V 2 4.0max ■Absolute maximum ratings (Ta=25°C) (7 0 Ω ) Application : Audio, Series Regulator and General Purpose 20.0min Darlington C B 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 30 6 5 10 –5 5 –5 0.8typ 6.2typ 1.1typ I C – V CE Characteristics (Typical) 5.45±0.1 B C 1.4 E Weight : Approx 6.0g a. Part No. b. Lot No. I C – V BE Temperature Characteristics (Typical) I B =0.1mA 0 2 0 4 I C =3A 0 6 0.5 0.1 Collector-Emitter Voltage V C E (V) 1 5 10 50 h FE – I C Temperature Characteristics (Typical) (V C E =4V) Typ 1000 500 0.5 1 125˚C Transient Thermal Resistance DC C urrent G ain h FE 50000 5000 10000 25˚C 5000 –30˚C 1000 500 100 0.01 56 0.1 Collector Current I C (A) p) em eT as (C ) Temp 1 0.5 2 2.5 1 θ j-a – t Characteristics 5 1 0.5 1 56 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 80 60 20 Typ Collector Curre nt I C (A) nk 160 –6 si –1 Emitter Current I E (A) at –0.1 he 0 –0.02 ite 0.1 fin Without Heatsink Natural Cooling 40 In 0.5 ith s 1 W 0m s 20 C 10 40 D m 5 60 Maximu m Power Dissipa tion P C (W) 10 10 Cut-o ff F requ ency f T (MH Z ) DC Curr ent Gain h F E 50000 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 100 0.01 0 100 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 2 (Case 1 –30˚C 2 I C =5A 4 ) 0.2mA 2 Temp 4 5˚C Collector Current I C (A) 0.3 mA (V CE =4V) 6 3 12 0. 4m A (Case A 25˚C 5m Collector Current I C (A) 0. θ j - a (˚C /W) 5mA 6 Collector-Emitter Saturation Voltage V C E (s a t) (V ) 1m A V CE ( sat ) – I B Characteristics (Typical) 20 Without Heatsink 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 Equivalent circuit 2SD2642 V VCEO 110 V VEBO 5 V .V(BR)CEO IC 6 A ICBO Unit VCB=110V 100max µA 100max µA 110min V hFE VCE=4V, IC=5A 5000min∗ IC=5A, IB=5mA 2.5max 16.9±0.3 VEB=5V IC=30mA IEBO 10.1±0.2 A PC 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–0.5A 60typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 55typ pF Tstg 3.9 1 VCE(sat) 1.35±0.15 1.35±0.15 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) 2.4±0.2 2.2±0.2 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 30 6 5 10 –5 5 –5 0.8typ 6.2typ 1.1typ I C – V CE Characteristics (Typical) ø3.3±0.2 a b V IB 4.2±0.2 2.8 c0.5 4.0±0.2 110 Ratings 0.8±0.2 VCBO External Dimensions FM20(TO220F) (Ta=25°C) Conditions ±0.2 Symbol Unit 8.4±0.2 ■Electrical Characteristics Ratings Symbol E Application : Audio, Series Regulator and General Purpose Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) ■Absolute maximum ratings (Ta=25°C) (7 0 Ω ) 13.0min Darlington C B Weight : Approx 2.0g a. Part No. b. Lot No. B C E I C – V BE Temperature Characteristics (Typical) I B =0.1mA 0 2 0 4 I C =3A 0 6 0.5 0.1 Collector-Emitter Voltage V C E (V) 1 5 10 50 h FE – I C Temperature Characteristics (Typical) (V C E =4V) Typ 1000 500 0.5 1 125˚C Transient Thermal Resistance DC C urrent G ain h FE 50000 5000 10000 25˚C 5000 –30˚C 1000 500 100 0.01 56 0.1 Collector Current I C (A) p) em eT as (C ) ) Temp 1 0.5 2 2.5 1 θ j-a – t Characteristics 4 1 0.5 0.3 56 1 5 10 50 100 500 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 30 80 10 he at si nk Without Heatsink Natural Cooling ite 1 0.5 20 fin 20 DC 10 m s 0m s In 40 10 5 ith Collector Cur rent I C (A) 60 W Maximu m Power Dissipa tion P C (W) Typ Cu t-of f Fr eque ncy f T (MH Z ) DC Curr ent Gain h FE 50000 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 100 0.01 0 100 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 2 (Case 1 –30˚C 2 I C =5A 4 Temp 0.2mA 2 5˚C 4 12 Collector Current I C (A) 0.3 mA (V CE =4V) 6 3 (Case 0. 4m A 25˚C mA Collector Current I C (A) 5 0. θ j - a (˚C /W) 5mA 6 Collector-Emitter Saturation Voltage V C E (s a t) (V ) 1m A V CE ( sat ) – I B Characteristics (Typical) 10 0.1 Without Heatsink 2 0 –0.02 –0.1 –1 Emitter Current I E (A) –6 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 161 C Equivalent circuit 2SD2643 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) 110 V ICBO VCEO 110 V IEBO VEBO 5 V V(BR)CEO IC 6 (Ta=25°C) Conditions Ratings Unit VCB=110V 100max µA VEB=5V 100max µA IC=30mA 110min V A hFE VCE=4V, IC=5A 5000min∗ 15.6±0.2 A VCE(sat) IC=5A, IB=5mA 2.5max 60(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–0.5A 60typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 55typ pF RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 30 6 5 10 –5 5 –5 0.8typ 6.2typ 1.1typ I C – V CE Characteristics (Typical) 3.3 1.75 0.8 2.15 1.05 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) ■Typical Switching Characteristics (Common Emitter) VCC (V) 3.45 ±0.2 3.0 1 PC 5.5±0.2 ø3.3±0.2 a b V IB Tstg External Dimensions FM100(TO3PF) 0.8±0.2 VCBO Symbol 5.5 Unit 1.6 ■Electrical Characteristics Ratings 9.5±0.2 Symbol E Application : Audio, Series Regulator and General Purpose 23.0±0.3 ■Absolute maximum ratings (Ta=25°C) (7 0 Ω ) 16.2 Darlington B 5.45±0.1 0.65 +0.2 -0.1 5.45±0.1 1.5 4.4 B 3.35 1.5 C Weight : Approx 6.5g a. Part No. b. Lot No. E I C – V BE Temperature Characteristics (Typical) I B =0.1mA 0 2 0 4 1 I C =3A 0 6 0.5 0.1 Collector-Emitter Voltage V C E (V) 1 5 10 50 (V C E =4V) Typ 5000 1000 500 1 125˚C Transient Thermal Resistance DC Curr ent Gain h FE D C Cur r ent Gai n h F E 50000 0.5 p) em eT as (C 10000 25˚C 5000 –30˚C 1000 500 100 0.01 56 ) Temp 1 0.1 Collector Current I C (A) 0.5 2.5 1 5 1 0.5 1 56 5 10 50 100 500 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 50000 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 100 0.01 0 100 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 2 (Case I C =5A 4 –30˚C 2 2 ) 0.2mA Temp 4 5˚C Collector Current I C (A) 0.3 mA (V CE =4V) 6 3 12 0. 4m A (Case A 25˚C 5m Collector Current I C (A) 0. θ j - a (˚C /W) 5mA 6 Collector-Emitter Saturation Voltage V C E (sa t) (V ) 1m A V CE ( sat ) – I B Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 80 si nk Collector Curr ent I C (A) at 162 –6 he –1 Emitter Current I E (A) ite –0.1 fin 0.1 0 –0.02 40 In Without Heatsink Natural Cooling ith s 1 0.5 W 0m s 20 C 10 40 D m 5 60 Maxim um Power Dissip ation P C (W) 10 10 Cut- off F req uenc y f T (M H Z ) 60 20 Typ 20 Without Heatsink 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150 Equivalent circuit SAH02 2 1 Silicon PNP Epitaxial Planar Transistor with Shottky Barrier Diode µA IEBO VEB=–10V –10max µA V(BR)CEO IC=–10mA –30min V ICBO VCEO –30 V VEBO –10 V IC –3 A hFE1 VCE=–2V, IC=–1A 100min IB –0.5 A hFE2 VCE=–2V, IC=–0.5A 150min PC 800(Ta=25°C) mW VCE(sat) IC=–0.5A, IB=–20mA –0.3max V 125 °C fT VCE=–12V, IE=0.3A 100typ –40 to +125 °C COB VCB=–10V, f=1MHz 45typ pF VR IR=100µA VF IF=0.5A trr IF=±100mA –3 V V 1 1.4±0.2 3.6±0.2 6.8max 4.0max 6.3±0.2 0~0.1 1.0±0.3 Weight : Approx 0.23g a. Part No. b. Lot No. 3.0±0.2 9.8±0.3 I C – V CE Characteristics (Typical) –100mA 30 min 0.55 max b 0.25 Tstg a 4 8.0±0.5 MHz Tj 2 3 4.32±0.2 Unit –10max V 4.8max Ratings VCB=–30V Unit –30 2.54±0.25 Conditions Ratings VCBO Symbol External Dimensions PS Pack (Ta=25°C) 0.3 +0.15 -0.05 ■Electrical Characteristics 0.89±0.15 Symbol 15 typ ns Di ode I F – V F Characteristics –20mA 3 Application : Chopper Regulator 0.75 +0.15 -0.05 ■Absolute maximum ratings (Ta=25°C) 4 I C – V BE Temperature Characteristics (Typical) 3 (V C E =–2V) –3 –1 0 –2 –3 –4 –5 0 –6 0 0.5 Collector-Emitter Voltage V C E (V) 0.8 t stg t on tf 0.2 0 –0.1 –0.5 –1 –3 125˚C 500 25˚C –30˚C 100 –0.01 –0.05 –0.1 –0.5 (I C =–0.5A) (Case Temp ) mp) –30˚C –1.5 –1 –3 100 10 1 0.3 0.001 0.01 0.1 1 10 100 1000 Time t(ms) Safe Operating Area (Single Pulse) V CE (sat) – I B Temperature Characteristics (Typical) –1.0 300 Collector Current I C (A) Collector Current I C (A) –1.5 Transient Thermal Resistance DC Curr ent Gain h FE V C C 12V –I B 1 =I B2 =30mA 0.4 –0.5 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 1000 1.0 0.6 0 Base-Emittor Voltage V B E (V) (V C E =–2V) P c – T a Derating 1.0 –5 25˚C –1.0 125˚C –0.5 10 –1 –5 –10 –50 Base Current I B (mA) –100 –300 s s –0.5 –0.1 –0.05 0 –1 m Ma xim um Powe r Dissipat io n P C (W) 100µs 1m –30˚C Collector Curr ent I C (A) t on • t st g• t f ( µs) ) 0 1.0 Forward Voltage V F (V) t on •t stg •t f – I C Characteristics (Typical) Swit ching Time emp ˚C ( 125 C ˚C 0˚ 25 C θ j- a (˚C /W) 0 5˚ –3 12 Collecto r-Emitte r Satu ration Voltage V C E( s a t ) ( V) –1 Cas 1 eT I B =–3mA –1 –2 e Te –5m A 2 (Cas –5m A 25˚C –2 Collector Current I C (A) –1 0m A Forward Current I F (A) Collector Current I C (A) –15mA –0.03 –3 Without Heatsink Natural Cooling –5 –10 Collector-Emitter Voltage V C E (V) –50 0.5 Glass epoxy substrate (95 x 69 x 1.2mm) Natural Cooling 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 163 Equivalent circuit 2 (4kΩ) SAH03 Silicon PNP Epitaxial Planar Transistor with Fast-Recovery Rectifier Diode 1 Ratings Unit VCBO –60 V ICBO VCEO –60 V IEBO VEBO –6 V V(BR)CEO IC –1.2 A hFE VCE=–4V, IC=–1A IB –0.1 A VCE(sat) IC=–1A, IB=–2mA –1.4max V PC 1.0(Ta=25°C) W fT VCE=–12V, IE=0.1A 100typ MHz 8.0±0.5 Tj 150 °C COB VCB=–10V, f=1MHz 30typ pF 6.3±0.2 –40to+150 °C VR IR=100µA 100 min V VF IF=0.5A 1.5 max V trr IF=±100mA 100 typ ns µA –3max mA 4 a b 1 0.89±0.15 V –60min 2000 to 12000 1.4±0.2 0.75 +0.15 -0.05 VEB=–6V IC=–10mA 2 3 4.32±0.2 Unit –10max 2.54±0.25 Ratings VCB=–60V 3.6±0.2 6.8max 4.0max 0.3 +0.15 -0.05 Tstg Conditions 0.25 Symbol 0~0.1 1.0±0.3 Weight : Approx 0.23g a. Part No. b. Lot No. 3.0±0.2 9.8±0.3 –2 –3 –4 –5 0 125 1 tf 12 1000 0.5 t on Transient Thermal Resistance 5000 DC Cur rent Gain h F E 5˚C ˚C 25 500 0 –3 ˚C 100 –1 50 –0.02 –2.4 V CE (sat) – I B Temperature Characteristics (Typical) –0.1 –0.5 –1 –2.4 1 0.3 0.001 0.01 0.1 1 10 100 1000 Time t(ms) P c – T a Derating 1.5 –3 10 125˚C mp) 10 Safe Operating Area (Single Pulse) (I C =–0.5A) 0µ Collector Curre nt I C ( A) s –1 s –30˚C ms 25˚C –2 1m 10 Collecto r-Emitte r Satu ration Vo lt age V C E( s a t ) ( V) –0.05 –3 100 Collector Current I C (A) Collector Current I C (A) –2 300 Maximu m Power Dissipa tion P C (W) t on• t st g• t f (µs) Switching T im e V C C 30V –I B 1 =I B 2 =2mA 1 –3 –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 10000 2 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) 0.1 –0.2 0 1.6 Forward Voltage V F (V) t on •t stg •t f – I C Characteristics (Typical) t stg ) ˚C ( Cas 0.01 –6 Collector-Emitter Voltage V C E (V) θ j- a ( ˚C/W) –1 0 –1 0˚ C 2 5 ˚C 125 0 –1 e Te 0.05 I B =–0.3m A mp) 0.1 (Cas –0 .4m A –1 emp A –2 eT – 0 .5 m 0.5 (V CE =–4V) e Te A –2.4 ˚C Collector Current I C (A) – 0 .6 m Forward Current I F (A) –0 .8 m A –2 1.2 1 –30˚C –1 .0 m A I C – V BE Temperature Characteristics (Typical) (Cas –2.4 Di od e I F – V F Characteristics –1.2mA Collector Current I C (A) –5.0mA –10.0mA –2.0mA 25˚C I C – V CE Characteristics (Typical) 3 External Dimensions PS Pack (Ta=25°C) 4.8max Symbol (100Ω) Application : Voltage change switch for motor ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) 4 –1 –0.5 Without Heatsink Natural Cooling –0.1 0 –0.1 –0.5 –1 Base Current I B (mA) 164 –5 –0.05 –1 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 1.0 0.5 Glass epoxy substrate (95 x 69 x 1.2mm) Natural Cooling 0 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150 Equivalent circuit SAP09N B D Application: Audio V IC 10 A IB 1 A PC 80 ( Tc = 25°C) W 10 mA 150 °C –40 to +150 °C Di IF Tj Tstg typ Unit max 100 µA 100 µA IEBO VEB = 5V VCEO IC =30mA 150 hFE ✽ VCE =4V, IC =6A 5000 VCE (sat) IC =6A, IB =6mA 2.0 V VBE (sat) IC =6A, IB =6mA 2.5 V (36°) V 20000 a b VBE VCE =20V, IC =40mA 1220 mV IF =2.5mA 705 mV Di VF IE =1A RE 0.176 0.22 IC – VCE Characteristics (Typical) 3.81±0.1 2.54±0.1 (12.7) 1.0m A 1.8mA 0.8m Collector Current IC (A) 0.5mA 6 0.3mA 4 IB = 0.2mA 2 0 4 2 2 IC =8A 6A 4A 1 0 0.3 0.5 1 j-a (°C/W) Transient Thermal Resistance 25°C –30°C 1000 500 200 0.03 0.1 0.5 1 5 4 125°C 25°C 50 100 0 – 30°C 0 1 2 3 Base-Emitter Voltage VBE (V) Characteristics 3 1 0.5 0.1 1 10 5 10 Collector Current IC (A) 50 100 500 1000 2000 Time t (ms) Safe Operating Area (Single Pulse) PC – Ta Derating 30 10 m 0m s s 10 5 D. C ite fin at he 40 k sin Without Heatsink Natural Cooling In 0.5 ith 1 60 W Maximum Power Dissipation Pc (W) 80 10 Collector Current IC (A) DC Current Gain hFE j-a – t 125°C 5000 10 5 Base Current IB (mA) hFE – IC Characteristics (Typical) 10000 6 2 Collector-Emitter Voltage VCE (V) (VCE = 4V) (VCE =4V) 8 6 50000 S E 10 Collector Current IC (A) A 1.3mA C Weight: Approx 8.3g a. Part No. b. Lot No. IC – VBE Temperature Characteristics 3 Collector-Emitter Saturation Voltage VCE(sat) (V) mA 1.5 +0.2 0.65 –0.1 3.81±0.1 (7.62) 17.8±0.3 4±0.1 VCE(sat) – IB Characteristics (Typical) 8 0 1±0.1 +0.2 0.8 –0.1 2.54±0.1 Ω 0.264 +0.2 0.65 –0.1 B D 10mA 2.5mA 2.0mA 4.5±0.2 1.6±0.2 +0.2 1.35 –0.1 ✽hFE Rank O (5000 to 12000), Y (8000 to 20000) 10 3.2±0.2 15.4±0.3 9.9±0.2 2±0.1 V 5 min VCB =150V (41) 150 Conditions ICBO 5±0.2 VCEO VEBO Symbol (Unit: mm) (18) V External Dimensions 7±0.2 22±0.3 23±0.3 28±0.3 150 ( Ta = 25°C ) Ratings 3.3±0.2 VCBO ■Electrical Characteristics (2.5) Unit 3.4max ■Absolute maximum ratings (Ta=25°C) Ratings S Emitter resistor RE: 0.22Ω Typ. R: 70Ω Typ. E (Complement to type SAP09P) Symbol C 20 0.1 0.05 3 5 10 50 100 Collector-Emitter Voltage VCE (V) 200 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta (°C) 165 Equivalent circuit SAP09P B C Application: Audio IC –10 A IB –1 A PC 80 ( Tc=25°C) W 10 mA 150 °C –40 to +150 °C Tj Tstg typ Unit max –100 µA –100 µA IEBO VEB = – 5V VCEO IC = – 30mA –150 hFE ✽ VCE = – 4V, IC = – 6A 5000 VCE (sat) IC = – 6A, IB = – 6mA –2.0 V VBE (sat) IC = – 6A, IB = – 6mA –2.5 V (36°) V 20000 a b VCE = – 20V, IC = – 40mA 1230 mV IF = 2.5mA 1580 mV Di VF IE =1A RE 0.176 0.22 IC – VCE Characteristics (Typical) 2.54±0.1 –0.8mA –10m –1.5mA –1.8mA –0.5mA –6 –0.3mA –4 IB = –0.2mA –2 0 –2 0 –2 IC = –8A –6A –4A –1 j-a (°C/W) Transient Thermal Resistance DC Current Gain hFE –30°C 5000 1000 500 200 –0.03 –0.1 –0.5 –1 –5 0 –0.3 –1 –5 –50 –100 1 0.5 0.1 1 5 10 50 100 500 1000 2000 Time t (ms) PC – Ta Derating Safe Operating Area (Single Pulse) 80 10 D. –5 s at 40 k in Without Heatsink Natural Cooling he –0.5 ite –1 60 fin In C ith 10 m s 0m s –10 W Maximum Power Dissipation Pc (W) –30 20 –0.1 –0.05 –3 –5 –10 –50 –100 Collector-Emitter Voltage VCE (V) 166 –200 3.5 0 –6 –4 125°C 25°C Without Heatsink 0 25 50 75 100 0 0 –1 –2 Base-Emitter Voltage VBE (V) Characteristics Collector Current IC (A) Collector Current IC (A) –10 3 –10 (VCE = –4V) –30°C j-a – t 25°C 10000 IC – VBE Temperature Characteristics (Typical) –2 Base Current IB (mA) 125°C D B –8 hFE – IC Characteristics (Typical) 50000 C –10 Collector-Emitter Voltage VCE (V) (VCE = –4V ) Weight: Approx 8.3g a. Part No. b. Lot No. 4±0.1 –3 –6 –4 +0.2 0.65 –0.1 3.81±0.1 (12.7) Collector Current IC (A) –1.0mA (18) 2.54±0.1 (7.62) 17.8±0.3 VCE(sat) – IB Characteristics (Typical) Collector-Emitter Saturation Voltage VCE(sat) (V) mA 3 –1. A Collector Current IC (A) –8 1±0.1 +0.2 0.8 –0.1 3.81±0.1 Ω 0.264 +0.2 (2.5) VBE 0.65 –0.1 E S –2.0mA –2.5mA 4.5±0.2 1.6±0.2 +0.2 1.35 –0.1 ✽hFE Rank O (5000 to 12000), Y (8000 to 20000) –10 φ3.2±0.2 15.4±0.3 9.9 ±0.2 2±0.1 V min (41) V –5 VCE = –150V 5±0.2 –150 Conditions ICBO 28±0.3 VCEO VEBO Symbol 7±0.2 V (Unit: mm) 23±0.3 150 External Dimensions 22±0.3 VCBO ( Ta = 25°C ) Ratings 3.3±0.2 Unit 3.4max Ratings Di IF ■Electrical Characteristics (Ta=25°C) Symbol Emitter resistor RE: 0.22Ω Typ. S R: 70Ω Typ. (Complement to type SAP09N) ■Absolute maximum ratings E D 125 Ambient Temperature Ta (°C) 150 –3 Equivalent circuit SAP10N B D Application: Audio V 12 A IC 1 IB PC 10 mA Di IF 150 °C –40 to +150 °C Tj Tstg A W IEBO VEB =5V VCEO IC = 30mA 150 hFE ✽ VCE = 4V, IC =7A 5000 VCE (sat) IC =7A, IB =7mA 100 µA 100 µA V 2.0 1200 mV IF =2.5mA 705 mV Di VF IE = 1A RE 0.176 0.22 a b +0.2 0.65 –0.1 2.54±0.1 (7.62) (12.7) 1.0mA Collector Current IC (A) 0.8mA 8 0.6mA 0.4mA 4 IB =0.2mA 0 0 2 4 2 IC =10A 7A 1 5A 0 0.4 1 5 j-a – t j-a (°C/W) Transient Thermal Resistance 25°C –30°C 1000 0.3 0.5 1 5 6 125°C 4 25°C 50 100 200 0 – 30°C 0 1 2 2.5 Base-Emitter Voltage VBE (V) Characteristics 3 1 0.5 0.1 1 10 12 5 10 Collector Current IC (A) 50 100 500 1000 2000 Time t (ms) PC – Ta Derating Safe Operating Area (Single Pulse) 100 10 10 m 10 s 0m s C ite k sin at he Without Heatsink Natural Cooling 60 fin 0.5 In 1 80 ith W D. 5 Maximum Power Dissipation Pc (W) 30 Collector Current IC (A) DC Current Gain hFE 125°C 5000 10 Base Current IB (mA) hFE – IC Characteristics (Typical) 10000 8 2 6 40000 (VCE =4V) 10 Collector-Emitter Voltage VCE (V) (VCE =4V) S E 12 Collector Current IC (A) A A 1.2m A m 1.5 C Weight: Approx 8.3g a. Part No. b. Lot No. IC – VBE Temperature Characteristics (Typical) VCE(sat) – IB Characteristics (Typical) 3 Collector-Emitter Saturation Voltage VCE(sat) (V) 2.5mA 2.0m 10mA +0.2 0.65 –0.1 3.81±0.1 17.8±0.3 4±0.1 B D 12 1±0.1 +0.2 2.54±0.1 3.81±0.1 ✽hFE Rank O (5000 to 12000), Y (8000 to 20000) IC – VCE Characteristics (Typical) 4.5±0.2 1.6±0.2 0.8 –0.1 Ω 0.264 φ 3.2±0.2 +0.2 1.35 –0.1 V 2.5 VCE =20V, IC =40mA 15.4±0.3 9.9±0.2 (36°) V 20000 IC =7A, IB =7mA VBE (sat) VBE Unit max VCB =150V ICBO 100( Tc=25°C) typ 2±0.1 V 5 min (41) 150 Conditions 5±0.2 VCEO VEBO Symbol (Unit: mm) (18) V External Dimensions 7±0.2 22±0.3 0.3 ± 23 28±0.3 150 ( Ta = 25°C ) Ratings 3.3±0.2 VCBO ■Electrical Characteristics 3.4max Unit (2.5) ■Absolute maximum ratings (Ta=25°C) Ratings S Emitter resistor RE: 0.22Ω Typ. R: 70Ω Typ. E (Complement to type SAP10P) Symbol C 40 20 0.1 0.05 3 5 10 50 100 Collector-Emitter Voltage VCE (V) 200 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta (°C) 167 Equivalent circuit SAP10P S B C Application: Audio –150 V –5 V IC –12 A IB –1 A 100 ( Tc = 25°C) W 10 mA 150 °C –40 to +150 °C Tj Tstg VCB =–150V min typ Unit max –100 µA –100 µA IEBO VEB = –5V VCEO IC =–30mA –150 hFE ✽ VCE =–4V, IC = –7A 5000 VCE (sat) IC =–7A, IB =–7mA –2.0 V VBE (sat) IC =–7A, IB =–7mA –2.5 V 15.4±0.3 9.9±0.2 (36°) V 20000 a b VBE VCE = – 20V, IC = – 40mA 1210 mV IF =2.5mA 1540 mV Di VF IE = 1A RE 0.176 0.22 IC – VCE Characteristics (Typical) –1.0mA Collector Current IC (A) –8 –0.6mA –0.4mA –4 IB =–0.2mA 0 –4 –2 –2 IC =–10A –7A –1 –5A 0 –0.4 –1 j-a (°C/W) Transient Thermal Resistance DC Current Gain hFE j-a – t 25°C 5000 – 30°C 1000 –0.3 –0.5 –1 –5 –5 –50 –100 –200 1 0.5 0.1 1 5 10 50 100 500 1000 2000 Time t (ms) Safe Operating Area (Single Pulse) PC – Ta Derating 100 –10 10 m 10 s 0m s C 60 ite in k in s at he Without Heatsink Natural Cooling f In –0.5 ith –1 80 W D. –5 Maximum Power Dissipation Pc (W) –30 40 20 –0.1 –0.05 –3 –5 –10 –50 –100 Collector-Emitter Voltage VCE (V) 168 –200 3.5 0 –6 125°C –4 25°C –30°C Without Heatsink 0 25 50 75 100 0 0 –1 –2 Base-Emitter Voltage VBE (V) Characteristics Collector Current IC (A) Collector Current IC (A) –10 3 –10 –12 –8 –2 hFE – IC Characteristics (Typical) 10000 (VCE =– 4V) –12 Base Current IB (mA) 125°C D B –10 –6 40000 C Weight: Approx 8.3g a. Part No. b. Lot No. IC – VBE Temperature Characteristics (Typical) –3 Collector-Emitter Voltage VCE (V) (VCE = –4V) +0.2 0.65 –0.1 3.81±0.1 (12.7) Collector Current IC (A) Collector-Emitter Saturation Voltage VCE(sat) (V) A m .0 –2 A –1.2m A 5m –1. (18) 2.54±0.1 (7.62) 17.8±0.3 4±0.1 VCE(sat) – IB Characteristics (Typical) –0.8mA 0 1±0.1 +0.2 0.8 –0.1 2.54±0.1 3.81±0.1 Ω 0.264 +0.2 0.65 –0.1 E S –10mA –2.5mA 4.5±0.2 1.6±0.2 +0.2 ✽hFE Rank O (5000 to 12000), Y (8000 to 20000) –12 φ3.2±0.2 1.35 –0.1 (2.5) PC Di IF Conditions ICBO 2±0.1 VCEO VEBO Symbol (Unit: mm) (41) V External Dimensions 5±0.2 –150 ( Ta = 25°C ) Ratings 7±0.2 22±0.3 0.3 ± 23 28±0.3 VCBO ■Electrical Characteristics 3.3±0.2 Unit 3.4max ■Absolute maximum ratings (Ta=25°C) Ratings Emitter resistor RE: 0.22Ω Typ. R: 70Ω Typ. (Complement to type SAP10N) Symbol E D 125 Ambient Temperature Ta (°C) 150 –2.5 Equivalent circuit SAP16N D E V 5 V IC 15 A IB 1 A 150( Tc = 25°C) W 10 mA 150 °C –40 to +150 °C Tj Tstg Unit max 100 µA 100 µA IEBO VEB = 5V VCEO IC = 30mA 160 hFE ✽ VCE = 4V, IC = 10A 5000 VCE (sat) IC = 10A, IB = 10mA 2.0 V VBE (sat) IC = 10A, IB = 10mA 2.5 V φ 3.2±0.2 15.4±0.3 9.9±0.2 (36°) V 20000 4.5±0.2 1.6±0.2 a b +0.2 VBE VCE = 20V, IC = 40mA 1190 mV IF = 2.5mA 705 mV Di VF IE = 1A RE 0.176 0.22 0.264 Ω 90 100 110 Ω REB 1.35 –0.1 +0.2 0.65 –0.1 +0.2 0.8 –0.1 2.54±0.1 2.54±0.1 3.81±0.1 +0.2 0.65 –0.1 3.81±0.1 (7.62) (12.7) 17.8±0.3 4±0.1 Weight: Approx 8.3g a. Part No. b. Lot No. ✽hFE Rank O (5000 to 12000), Y (8000 to 20000) B D IC – VCE Characteristics (Typical) 2. 5.0mA 1.2mA Collector Current IC (A) 3.0mA 1.0mA 0.8mA 10 0.5mA 5 IB =0.3mA 0 0 4 2 2 IC =15A 10A 1 5A 0 0.4 6 –30°C 1000 0.3 0.5 1 5 1 5 10 50 100 0 200 10 2 2.5 0.1 1 15 5 10 50 100 500 1000 2000 Time t (ms) PC – Ta Derating Di IF – VF Characteristics (Typical) 150 10 m s C 5 k in ts a he Without Heatsink Natural Cooling 100 ite fin 1 0.5 5 In Forward Current IF (mA) s ith W Maximum Power Dissipation Pc (W) 10 D. 1 Base-Emitter Voltage VBE (V) 0.5 40 0m 0 1 Safe Operating Area (Single Pulse) 10 25°C Characteristics Collector Current IC (A) 10 125°C 5 3 j-a (°C/W) Transient Thermal Resistance 25°C 5000 Collector Current IC (A) DC Current Gain hFE j-a – t 125°C 10000 10 Base Current IB (mA) hFE – IC Characteristics (Typical) 40000 (VCE =4V) –30°C Collector-Emitter Voltage VCE (V) (VCE =4V) S E 15 3 Collector Current IC (A) A 1.5m A 0m C IC – VBE Temperature Characteristics (Typical) VCE(sat) – IB Characteristics (Typical) Collector-Emitter Saturation Voltage VCE(sat) (V) 15 50mA 1±0.1 (18) Di IF typ (2.5) PC min VCB =160V 2±0.1 160 Conditions ICBO (41) VCEO VEBO Symbol (Unit: mm) 5±0.2 V External Dimensions 7±0.2 22±0.3 0.3 ± 23 28±0.3 160 ( Ta = 25°C ) Ratings 3.3±0.2 VCBO ■Electrical Characteristics 3.4max Unit S Emitter resistor RE: 0.22Ω Typ. Application: Audio ■Absolute maximum ratings (Ta=25°C) Ratings R: 100Ω Typ. B (Complement to type SAP16P) Symbol C 50 0.1 0.05 3 5 10 50 100 Collector-Emitter Voltage VCE (V) 200 1 0 0.5 1.0 1.5 Forward Voltage VF ( V ) 2.0 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta (°C) 169 Equivalent circuit C Application: Audio –160 V –5 V IC –15 A IB –1 A 150 ( Tc=25°C) W 10 mA 150 °C –40 to +150 °C Tj Tstg min IEBO VEB = – 5V VCEO IC = – 30mA –160 hFE ✽ VCE = – 4V, IC=–10A 5000 typ max Unit –100 µA –100 µA (36°) V 20000 VCE (sat) IC = – 10A, IB =–10mA –2.0 V VBE (sat) IC = – 10A, IB = – 10mA –2.5 V φ3.2±0.2 15.4±0.3 9.9±0.2 4.5±0.2 1.6±0.2 a b +0.2 VBE VCE = – 20V, IC = – 40mA 1200 mV IF = 2.5mA 1540 mV Di VF IE = 1A RE 0.176 0.22 0.264 Ω 90 100 110 Ω REB 1.35 –0.1 +0.2 0.65 –0.1 +0.2 0.8 –0.1 2.54±0.1 2.54±0.1 3.81±0.1 +0.2 0.65 –0.1 3.81±0.1 (7.62) (12.7) 17.8±0.3 4±0.1 Weight: Approx 8.3g a. Part No. b. Lot No. ✽hFE Rank O (5000 to 12000), Y (8000 to 20000) E S IC – VCE Characteristics (Typical) – A –1.2m Collector Current IC (A) –1.0mA –0.8mA –10 – 0.5mA –5 IB = –0.3mA 0 0 –4 –2 –2 IC = –15A –10A –1 –5A 0 –0.4 –6 25°C – 30°C 5000 1000 –0.3 –0.5 –1 –1 –5 –5 –50 0 –100 –200 –10 –2.5 0.1 1 –15 5 10 50 100 500 1000 2000 Time t (ms) PC – Ta Derating Di IF – VF Characteristics (Typical) 150 m s –5 ite fin k sin at he Without Heatsink Natural Cooling 100 In –1 –0.5 5 ith Forward Current IF (mA) C W Maximum Power Dissipation Pc (W) 10 s D. –2 –1 Base-Emitter Voltage VBE (V) 10 0m 0 0.5 –40 Collector Current IC (A) –10 1 Safe Operating Area (Single Pulse) 10 25°C Characteristics Collector Current IC (A) –10 125°C –5 3 j-a (°C/W) Transient Thermal Resistance DC Current Gain hFE j-a – t 125°C 10000 –10 Base Current IB (mA) hFE – IC Characteristics (Typical) 40000 (VCE =–4V) –30°C Collector-Emitter Voltage VCE (V) (VCE = – 4V) D B –15 –3 Collector Current IC (A) A –1.5m A m 2.0 C IC – VBE Temperature Characteristics (Typical) VCE(sat) – IB Characteristics (Typical) Collector-Emitter Saturation Voltage VCE(sat) (V) –50mA –5. 0m A –3 .0m A –15 1±0.1 (18) Di IF VCB = –160V (2.5) PC Conditions ICBO 2±0.1 VCEO VEBO Symbol (Unit: mm) (41) V External Dimensions 5±0.2 –160 ( Ta = 25°C ) Ratings 7±0.2 22±0.3 0.3 ± 23 28±0.3 VCBO ■Electrical Characteristics 3.3±0.2 Unit 3.4max ■Absolute maximum ratings (Ta=25°C) Ratings Emitter resistor RE: 0.22Ω Typ. S B (Complement to type SAP16N) Symbol E R: 100Ω Typ. SAP16P D 50 –0.1 –0.05 –3 –5 –10 –50 –100 Collector-Emitter Voltage VCE (V) 170 –200 1 0 0.5 1.0 1.5 Forward Voltage VF ( V ) 2.0 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta (°C) 150 SAP Series Application Information 1. Recommended Operating Conditions ➀Add a variable resistor (VR) between diode terminals to adjust the idling current. The resistor having 0 to 200Ω is to be used. ➁Adjust the forward current flowing over the diodes at 2.5mA. ➂Adjust the idling current at 40mA with the external variable resistor. Both the temperature coefficients for the transistor and the diodes are matched under the above conditions. Both the PNP and the NPN are Darlington transistors, so the temperature change ratio of the total four VBE of the transistors is subject to the compensation. One PN junction diode in the NPN and five Schottky barrier diodes in the PNP are built-in, and the total six diodes are operating as the temperature compensation. The temperature coefficient of the total diodes (its variable value) becomes smaller with a larger forward current (approximately — 0.2mV/℃ to 1mA), and the coefficient of the total transistors (its variable value) also becomes smaller with a larger idling current (approximately — 0.1mV/℃ to 10mA), but the both variable values are small. Thus, the distortion of the temperature coefficient caused by the different current is small, so the thermal runaway may not be occurred due to the changes of the recommended ratings; however, the actual operation is to be confirmed by using an experimental equipment or board. +VCC NPN C B S D 2.5mA E 40mA E D External variable resistor (VR) (0 to 200Ω) S B PNP C –VCC 171 2. External Variable Resistor Total forward voltage (at IF =2.5mA) of the diodes is designed to be equal or less than that of total VBE (at IC = 40mA) of the transistor, thus the idling current is required to be adjusted at 40mA with an additional external variable resistor. The relations are shown as below: Total VF of Diode ∆V=0 to 500mV Total VBE of Transistor + Total VRE of Emitter Resistor The VBE of the transistor is dependent to the hFE, and the VBE is lower with higher hFE and vice versa. The hFE for both the PNP and the NPN varies between 5k and 20k; thus the VBE is the lowest with the combination of maximum hFE (20k) each and it is the highest with the combination of minimum hFE (5k) each. Presuming the voltage difference between the VF of the diodes and the VBE of the transistors (including the total voltage drops of the two emitter resistors) as ∆V. Minimum VBE – Maximum VF variations of the diodes = 0 Maximum VBE – Minimum VF variations of the diodes = 500mV The current flowing over the diodes and the VR is adjusted at 2.5mA; therefore 500mV 2.5mA = 200Ω Consequently, the applicable VR value is to be 0 to 200‰ VBE Min. (P and N: hFE Max.) VBE Max. (P and N: hFE Min.) IC 40mA Di VF Variations VBE TR VBE Variations ∆VF =500mV 172 3. Characteristics of the temperature compensation diodes The several temperature compensation diodes are connected in series, so the forward voltage is varied with small current fluctuations. Therefore, in case the forward current flowing over the diodes is set at 2.5mA and over, the forward voltage rises, and in the worst combinations, the idling current reaches to 40mA and over with minimum VR of 0Ω. On the contrary, in case the forward current is set at 2.5mA or below, the idling current may not reach to 40mA with maximum VR of 200Ω. 10.0 Ta=25°C PN-Di SBD (5 diodes Total) PN–Di+SBD IF (mA) 5.0 1.0 0 500 1000 1500 2000 2500 3000 VF (mV) IF – VF Characteristics 4. Parallel push-pull application Adjustments of the idling current are required by each the resistor in parallel push-pull applications. One side adjustment will cause the idling current to be unstable (seesaw operation) because of the different hFE. To be adjusted individually 173 5. Destruction capacity of the built-in emitter resistor A thick-film resistor is used for the built-in resistor. The thick-film resistor has weaker destruction point in the Pc area (especially for large current flowing area) than that of the transistor chip itself. There is less concern, however, as this is subject to the area beyond an Are of Safe Operation (A.S.O.). However, under the evaluation like a short circuit test in which the current exceeds the guaranteed value, it may cause the emitter resistor to be destroyed before the transistor itself is destroyed. Consequently, the current value (or time) that operates the protection circuit is to be set at lower than that of discrete device configurations. In the application of car audio amplifiers, the same manners as the above need to be considered because the large current is flowed at low impedance. In addition, once the transistor falls into thermal runaway due to a soldering failure to the external VR added between diodes or other failure manners, as the worst case, there may cause a resin crack or smoke emissions by flare up. Flame retardant molding resin is used, and the material of the product is conformed to the most sever standard UL94V0. However it is recommended that the careful consideration be given to a protection circuit, and the protection circuits should be provided appropriately in due course. If the operating conditions are not to be matched to the ratings, it is also recommended that the E (Emitter resistor) terminal should be opened and the external emitter resistor should be added to the S (Sensing) terminal shown as below. IC Transistor destruction point C Thick-film resistor destruction point B A.S.O. Curve S D External emitter resistor E Output terminal VCE 174 MEMO 175 Discontinued Parts Guide Discontinued Parts Replace ment Parts Discontinued Parts Replacement Parts Discontinued Parts Replacement Parts 2SD219to221 2SC3179,3851,3851A 2SD219Fto221F 2SC3179,3851,3851A 2SD222to224 2SC3179,3851,3851A – 2SD236to238 2SC3179,3851,3851A 2SC1888to1889 2SC3852,3852A 2SD241to244 2SC3179,3851,3851A 2SA744to745 2SA1694to1695 2SC1829 – 2SA746to747 2SA1695 2SC1830 2SA764to765 2SA1725to1726 2SC1831 – 2SA807to808 2SA1693to1694 2SC1832 2SD2082,2083 2SA878 – 2SA892 2SB1351 2SC2022 2SC2023 2SD256to259 2SC3179,3851,3851A 2SA907to909 2SA1215to1216,1295 2SC2147 – 2SD419to421 2SD1769,1785 – 2SC2198 2SC4024 2SD556to557 2SC4468 2SA1694 2SC2199 2SC4131 2SD593to594 2SC4020 2SA1067 – 2SC2256 – 2SD605 2SA1068 – 2SC2260to2262 2SC4467 2SD606 2SA1102 2SA1693 2SC2302 2SC3832 2SD614to615 2SD1769,1785 2SA1103 2SA1694 2SC2303 2SC3833 2SD617 2SD2082 2SA1104 2SA1694 2SC2304 2SC3833 2SD721 2SD2081 2SA1105 2SA1695 2SC2305 – 2SD722 2SD2081 2SA1106 2SA1695 2SC2306 2SC4140 2SD807 2SC3679 2SA1116 2SA1493 2SC2307 2SC3833 2SD810 2SC4024 2SA1117 2SA1494 2SC2317 2SD2016 2SD971 – 2SA1135 2SA1693 2SC2354 2SC2023 2SD972 2SD1796 2SA1169 2SA1493 2SC2364 – 2SD1031 2SD1769,1785 2SA1170 2SA1494 2SC2365 2SC3831 2SD1170 2SD2045 2SA1187 – 2SC2491 2SC4024 2SD1532 2SD2015 2SA1205 2SA1746 2SC2492 – 2SD2231 2SD2493 2SA1355 2SA1262,1488 2SC2493 – 2SD2437 2SD2494 2SC2577 2SC4466 2SA971 2SA980to982 2SB622 – – – 2SB711to712 2SB1259,1351 2SC2578 2SC4467 2SB1005 2SB1257 2SC2579 2SC4467 2SA768to769 2SA1262,1488,1488A 2SB1476 2SB1624 2SC2580 2SC4468 2SA770to771 2SA1725,1726 2SB1586 2SB1625 2SC2581 2SC4468 2SA957to958 2SA1667,1668 2SC1107 2SC3179,3851 2SC2607 2SC3857 2SA1489 2SA1693 2SC1108 2SC3851A 2SC2608 2SC3858 2SA1490 2SA1694 2SC1109 2SC3179,3851 2SC2665 2SC4466 2SA1491 2SA1695 2SC1110 2SC3851A 2SC2723 2SC4140 2SA1643 2SA1725 2SC1111to1112 2SC4467to4468 2SC2761 – 2SA1670 2SA1907 2SC1113 2SC4511to4512 2SC2773 2SC3857 2SA1671 2SA1908 2SC1114 – 2SC2774 2SC3858 2SA1672 2SA1909 2SC1115to1116 2SC4468 2SC2809 – 2SB1624 2SB1685 2SC1402to1403 2SC4467to4468 2SC2810A 2SC4820 2SB1625 2SB1687 2SC2825 2SD2045 2SB1626 2SB1686 2SC1826to1827 2SC3179,3851,3851A 2SC1983to1984 2SC3852,3852A 2SC1985to1986 2SC4511,4512 2SC2167to2168 2SC4381,4382 2SC1436 – 2SC1437 – 2SC2838 – 2SC1440to1441 – 2SC2900 – 2SC1442to1443 – 2SC3409 2SC3679 2SC4511to4512 2SC3520 – 2SC3706 2SC1477 – 2SC3909 2SC3680 2SC1504 2SC2023 2SC4023 2SC5124 2SC1577to1578 2SC3833,3831 2SC4199,4199A 2SC5124 2SC1579to1580 2SC4706 2SC4302 2SC4301 2SC1584to1585 2SC2921-2922,3264 2SC4303,4303A 2SC5002 2SC1618to1619 2SC4466-4467 2SC4494 2SC4495 2SC1629 2SD2045 2SC4756 2SC5002 2SC1664 2SC4558 2SD15to18 2SC1768 – 2SC1777 2SC1444to1445 2SC4140 Repair Parts Replacement Parts 2SC2315to2316 2SC4558 2SC2810 2SC3890 2SC3300 2SC4131 2SC3853 2SC4466 2SC3854 2SC4467 2SC3855 2SC4468 2SC4385 2SC5099 2SC4386 2SC5100 2SC4387 2SC5101 2SC4468 2SC4503 2SD2083 2SD80to84 2SC4466,4467 2SC4558 2SD2495 – 2SD90to94 2SC3179,3851,3851A 2SC4820 2SC4518 2SC1783 – 2SD163to166 2SC4468 2SD2493 2SD2641 2SC1786 – 2SD201to203 2SC4466to4467 2SD2494 2SD2643 2SD211to214 2SC4468 2SD2495 2SD2642 2SC1454 2SC1828 176 2SC3832,3830 – Sanken Electric Co.,Ltd. 1-11-1 Nishi-Ikebukuro,Toshima-ku, Tokyo PHONE: 03-3986-6164 FAX: 03-3986-8637 Overseas Sales Offices ●Asia Sanken Electric Korea Co.,Ltd. SK Life B/D 6F, 168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea PHONE: 82-2-714-3700 FAX: 82-2-3272-2145 Taiwan Sanken Electric Co.,Ltd. Room 902, No.88, Chung Hsiao E. Rd., Sec. 2 Taipei, Taiwan R.O.C. PHONE: 886-2-2356-8161 FAX: 886-2-2356-8261 Sanken Electric Singapore Pte.Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 0718 PHONE: 291-4755 FAX: 297-1744 Sanken Electric Hong Kong Co.,Ltd. 1018 Ocean Centre, Canton Road, Kowloon, Hong Kong PHONE: 2735-5262 FAX: 2735-5494 ●North America Allegro MicroSystems,Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615, U.S.A. PHONE: (508) 853-5000 FAX: (508) 853-7861 ●Europe Allegro MicroSystems Europe Limited. Balfour House, Churchfield Road, Walton-on-Thames, Surrey KT12 2TD, U.K. PHONE: 01932-253355 FAX: 01932-246622 Contents of this catalog are subject to change due to modification PRINTED in JAPAN H1-T01EE0-0107020SB
Source Exif Data:
File Type : PDF File Type Extension : pdf MIME Type : application/pdf PDF Version : 1.7 Linearized : No XMP Toolkit : Adobe XMP Core 4.0-c316 44.253921, Sun Oct 01 2006 17:14:39 Create Date : 2008:06:05 19:24:36+01:00 Modify Date : 2016:06:26 17:09:48+02:00 Metadata Date : 2016:06:26 17:09:48+02:00 Producer : PDF Edit pro. Keywords : Startup Profile : Print Marked : False Format : application/pdf Document ID : uuid:590ffa2f-2e0a-4e3f-bc64-254a1b7ebc88 Instance ID : uuid:be7a5ea3-ae11-409e-a67c-89f3c33491a7 Page Count : 179EXIF Metadata provided by EXIF.tools