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Solutions to Problems
from “Essentials of Electronic Testing”
c
M.
L. Bushnell and V. D. Agrawal, 2002

February 10, 2006

Please Read This
This manual contains solutions to all problems that appear at the end of the chapters
in the book. At the end of the manual we have included the solutions to problems
we used for the examinations in the Spring 2002 course at Rutgers University, and
Spring 2004 and Spring 2005 courses at Auburn University.
In spite of all the care taken to ensure accuracy, we caution the user that some
answers may contain errors as it is the first release of this manual. We will appreciate
if any errors or comments are forwarded to us by email: vagrawal@eng.auburn.edu
or bushnell@caip.rutgers.edu.
This manual has been created as teaching material that accompanies the book.
To preserve its effectiveness, it should not be distributed. If necessary, only a very
small set of solutions can be copied for distribution in the class. Please do not pass
your copy on to others and ask any one requesting it to contact the authors.
Teachers can also use the presentation slides for 31 lectures (or an alternative
sequence of 23-lectures), based on the book and available at the following websites:
http://www.eng.auburn.edu/∼vagrawal/COURSE/lectures.html
http://www.caip.rutgers.edu/∼bushnell/rutgers.html
We hope the readers of our book, both teachers and students, will benefit from
this work. We acknowledge the help from colleagues and students in completing
this solution manual and the assistance of the University of Wisconsin-Madison in
its initial distribution.

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Solution Manual V1.4 – M.
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Chapter 1: Introduction
1.1

Chip testing

The events of Example 1.1 are redefined as follows:
PQ:
FQ:

chip is good
chip is bad

P:
F:

chip passes the test
chip fails the test

A 70% yield means, P rob(P Q) = 0.7 and P rob(F Q) = 0.3. Following the analysis
of Example 1.1, P rob(P ) = 0.68. Then,
Bad chips that pass tests
All chips that pass tests
= P rob(F Q|P )
P rob(P |F Q)P rob(F Q)
=
P rob(P )
0.05 × 0.3
= 0.022
=
0.68

Defect level =

The defect level is 22, 000 ppm (parts per million).

1.2

Chip testing

Let x denote the escape probability, P rob(P |F Q). Referring to the formula derived
in Problem 1.1, a defect level of 500 ppm means,
P rob(P |F Q)P rob(F Q)
x × 0.3
=
= 0.0005
P rob(P )
0.95 × 0.7 + x × 0.3
This gives,
x=

0.0003325
0.29985

Next, we obtain,
Defect coverage = P rob(F |F Q) = 1 − P rob(P |F Q)
= 1 − x = 0.99889
The required defect coverage is 99.889%. This represents the capability of the
test in detecting the actual “defects” that occur and should not be confused with
the “fault coverage,” which is defined for the “single stuck-at” fault model.

1.3

Test cost

Assuming that one vector is applied per clock cycle during the digital test, the rate
of test application is 200 million vectors per second. Therefore,
Digital test time =

1000 × 106
=5s
200 × 106

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Adding the analog test time, we get
Total test time = 1.5 + 5.0 = 6.5 s
The testing cost for a 500 M Hz, 1,024 pin tester was obtained as 4.56 cents in
Example 1.2 (see page 11 of the book.) Thus,
Cost of testing a chip = 6.5 × 4.56 = 29.64 cents
The cost of testing bad chips should also be recovered from the price of good chips.
Since the yield of good chips is 70%, we obtain
Test cost in the price of a chip =

29.64
≈ 42 cents
0.7

41.8 cents should be included as the cost of testing while figuring out the
price of chips.

1.4

Test cost and self-test

Following Example 1.2 of the book (pp. 10-11), we obtain
ATE purchase price = $1.2M + 256 × $3, 000 = $1.968M
Assuming a 20% per year linear rate of depreciation, a maintenance cost of 2% of
the price, and an annual operating cost of $0.5M ,
Running cost = $1.968M × 0.2 + $1.968M × 0.02 + $0.5M = $932, 960/year
Testing cost =

$932, 960
= 2.96 cents/second
365 × 24 × 3600

Testing cost of the self-test design is 2.96 cents per second, down from
4.56 cents per second calculated in Example 1.2

1.5

Test complexity

Consider a cube of side d. The number of transistors (Nt ) is proportional to the
volume d3 , and the number of pins (Np ) is proportional to the surface area 6d2 .
Thus, the Rent’s rule for the cube can be expressed as,
Np = K × Nt 2/3
where K is a constant, which depends on such technology parameters as the minimum feature spacing. For simplicity, we will assume that this constant is the same
for the flat and cubic chips. Following Example 1.3 (pp. 12-13 of book), we define
the test complexity, T C, as transistors per pin, or T C = Nt /Np . For the cube,
T Ccube =

Nt
Nt
1
=
= Nt 1/3
2/3
Np
K
KNt

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Using the Rent’s rule for a flat chip (Equation 1.5 on page 13 of book), we obtain
T Csquare =

Nt
1
= Nt 1/2
1/2
K
KNt

Therefore,
T Csquare
= Nt 1/6
T Ccube
This ratio of test complexities continues to increase as the number of transistors (Nt )
on the VLSI device grows. For example, for Nt = 1 million, the square-chip test
complexity is ten times greater than that of the cubic-device. The test problem
of the cubic configuration is less complex than that for the flat chip.
Note: Although chips at present are not designed as three-dimensional objects,
three-dimensional packages and interconnects are in use. An interested reader may
see the article: H. Goldstein, “Packages Go Vertical,” IEEE Spectrum, vol. 38,
no. 8, pp. 46-51, August 2001. Recently, Matrix Semiconductor announced plans
to produce a three-dimensional memory chip. See, “Adding a Third Dimension to
Chips,” Computer, vol. 35, no. 3, p. 29, March 2002.

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Chapter 2: VLSI Testing Process and Test Equipment
2.1

Test types

To reduce the warranty and product liability costs, the manufacturer must adopt a
thorough but cost-effective test plan. A low failure rate, which may be as low as 100
parts per million, means that among one million chips shipped by the manufacturer
there should be no more than 100 defective chips. A suitable test strategy requires
adjustments to tests as the production ramps up. A realistic plan is as follows:
• Initial production: The manufacturer uses parametric tests and vector tests,
the latter with coverage in the 95-100% stuck-at fault range. For high-speed
microprocessor chips, at-speed critical path tests are run. The chips should
be subjected to burn-in test for infant mortality.
• Matured production: If burn-in failures are lower than the required defect level
then that test is eliminated or reduced to a sample basis. Any field returns
are re-tested by the manufacturing tests. If these pass then the manufacturing
tests are augmented, when necessary, by customer-supplied tests.
• Test optimization: Tests are optimized to reduce the manufacturing cost.
First, test sequences that fail a larger number of devices are moved to the
beginning. Second, test sequences that do not fail any devices are dropped.
Such modifications change the emphasis from detection of modeled faults to
detection of actual defects.
• Process monitoring: Once the chip goes into high-volume production, the
manufacturing process and the outgoing product (chips) should be monitored to keep any variations within statistical limits. This means that various parameters, such as metal resistivity, polysilicon conductivity, transistor
parameters, etc., should be within their three-sigma range (average ± 3 ×
standard deviation). Any excursions outside such a range are immediately
diagnosed and the causes remedied.

2.2

Contact test

Assume a diode drop of 0.7V . Then, the pin voltage range for contact test is given
by:
Upper range : Vpin = 0V − 0.7V − 100μA × 2000Ω
= −0.9V
Lower range : Vpin = 0V − 0.7V − 250μA × 2000Ω
= −1.2V

2.3

Set-up time test

To test a set-up time, tset−up = 360ps, apply the following waveforms to the chip (a
clock-to-Q delay of 400ps is assumed):
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MC
D

Inputs

CLK
360ps
Q

Output
400 ps
450ps
Measure Q

At an interval of 450ps after the rising CLK edge, measure Q on the ATE.
If Q = 1, the device passes, otherwise it fails. Using M S instead of M C, repeat
the above waveform sequence, but with D inverted and the expected Q signal also
inverted. At an interval of 450μs after the rising CLK edge, again measure Q on
the ATE. If Q = 0, the device passes, otherwise it fails. The same waveforms are
applied simultaneously to all five D lines, and five simultaneous measurements are
made on the five Q lines.

2.4

Hold time test

To test a hold time, thold = 120ps, apply the following waveforms to the chip (a
clock-to-Q delay of 400ps is assumed):
MC

120ps

D

Inputs

CLK
400ps
Q

Output
400ps
450 ps
Measure Q

At an interval of 120ps after the rising CLK edge, we lower the D line. If Q = 1
450ps after the rising CLK edge, the device passes, otherwise it fails. Using M S
instead of M C, repeat the above waveform sequence, but with D inverted and the
expected Q signal also inverted. At an interval of 450μs after the rising CLK edge,
again measure Q on the ATE. If Q = 0, the device passes, otherwise it fails. The
same waveforms are applied simultaneously to all five D lines, and five simultaneous
measurements are made on the five Q lines.

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2.5

Threshold test

Perform the threshold test as given on page 32 of the book, but with the following
changes: Assume a 5V supply, and perform binary search to find VIL and VIH . The
following procedure determines VIL :
Write a 1.25V signal to the
input pin and a propagating pattern.
Read the expected output.
Incorrect

Correct
Add 0.6V to input pin.
Read output pin.

Subtract 0.6V to input pin.
Read output pin.
Incorrect

Correct

Correct

Add 0.3V to input pin.
Read output pin.

Subtract 0.3V to input pin.
Read output pin.
Incorrect

Correct

Incorrect

Correct

Add 0.15V to input pin.
Read output pin.

Incorrect
Subtract 0.15V to input pin.
Read output pin.

Incorrect
Correct
Add 0.1V to input pin.
Read output pin.

Correct
Incorrect

Correct

Subtract 0.1V to input pin.
Read output pin.

Incorrect
Correct

Read input voltage as V
IL
If it is 0.8V or greater,
the chip passes.

Incorrect

The advantage of this procedure is that it greatly speeds up the test. The test
for VIH is analogous.

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Chapter 3: Test Economics and Product Quality
3.1

Economic decision

We start with the following formula for the price of the car deriven by John (Equation 3.2 on page 38 of the book):
P = 20, 000 +

20, 000
dollars
n

where n is the number of breakdowns per 15,000 miles since John’s car is driven
15,000 miles in a year. Because Laura drives only 5,000 miles per year, her car is
expected to have n/3 breakdowns per year. Assuming a linear depreciation to zero
value over 20 years and an average repair cost of $250 per breakdown, the annual
cost of driving is
P
+ K + 250n/3 dollars
20
1, 000
+ K + 250n/3 dollars
= 1, 000 +
n

C =

where K is the cost of gasoline and regular maintenance, assumed to be the same
for all models. To minimize this cost, we write
√
1, 000 250
dC
=− 2 +
= 0 or n = 12
dn
n
3
This is a minimum because
cost is,

d2 C
dn2

> 0. The price of a car for minimum transportation

20, 000
= 25, 774 dollars
P = 20, 000 + √
12
Laura should invest in a car priced around 25,774 dollars.

3.2

Economic decision

(a) Let x be the daily wages of a technician and c be the cost of components on a
board. When n technicians work in the assembly shop, the cost of one board is,
W arehouse cost
+ technician s wages + component cost
n
+workspace cost
10, 000
500n2
=
+x+c+
n
n

C(n) =

To minimize this cost, we write
√
10, 000
dC(n)
=−
+
1,
000n
=
0
or
n
=
20 = 4.47
dn
n2
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This is a minimum since

d2 C(n)
dn2

> 0. We obtain the minimum cost as,

C(4) = C(5) = $4, 500 + x + c
To minimize the cost we should either hire four technicians, or reduce
the workforce to five if more than five technicians were already employed.
(b) Substituting x = 200 and c = 10, 000 in the last equation, we get
C(4 or 5) = $4, 500 + 200 + 10, 000 = $14, 700
The minimum cost of a single-board system is $14,700.

3.3

Benefit-cost analysis

Please note a correction in the statement of this problem. The part (a) should read:
Show that this scheme is beneficial for chips whose total cost is less than ten times
the burn-in cost when the burn-in yield is 90%.
(a) Complete elimination of burn-in: Let Ct be the total cost of a chip in the present
scheme where burn-in test is applied to every chip that passes the conventional test.
Let Cb be the per chip cost of burn-in. Ct includes Cb , as well as another component,
Cf , which accounts for the costs of fabrication, conventional test, etc. It is given by,
Ct =

Cf + yc Cb
yc yb

where yc is the yield with the conventional test and yb is the yield reduction due to
burn-in. Since the cost of IDDQ test is 10% of the burn-in cost and there is a 10%
yield loss, the cost of a chip when burn-in is replaced by IDDQ test is given by,
C t =

Cf + 0.1yc Cb
0.9yc yb

For the new scheme to be beneficial, we must have
C  t < Ct

or Ct <

9Cb
yb

For the given 90% burn-in yield, yb = 0.9, and Ct < 10Cb . The total cost should
not exceed ten times the burn-in cost.
(b) Apply burn-in test only to chips that fail IDDQ test: Let yb be the burn-in yield.
Consider all chips that have passed pre-burn-in tests. A fraction yb of these is “good”
chips. We apply IDDQ test to all chips passing the pre-burn-in test. Due to the 10%
yield loss, this will produce a fraction 0.9yb consisting of good chips. The remaining
fraction, 1 − 0.9yb , must be subjected to the burn-in test to recover the lost yield.
For the new scheme to be beneficial, we must have
0.1Cb + (1 − 0.9yb )Cb < Cb or yb >

1
9

Burn-in yield should be greater than 1/9 or 11.1%.
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3.4

Yield and cost

Let Cw be the cost of processing a wafer having N chips and let y(A) be the yield
of chips, where A is the chip area. Then the cost per good chip is obtained as,
Cc =

Cw
N y(A)

DFT changes the chip area to (1 + Δ)A. The number of chips on a wafer of area
N A is now given by, N A/(A + ΔA) = N/(1 + Δ). The cost of a good chip with
DFT is given by,
Cc (DF T ) =

N
1+Δ

Cw
y(A + ΔA)

Therefore, the cost increase due to DFT is,
Cc (DF T ) − Cc
× 100 percent
Cc


(1 + Δ)y(A)
=
− 1 × 100 percent
y(A + ΔA)

Cost increase =

Using the yield formula of Equation 3.12 (p. 46 in the book), we get




(1 + Ad/α)−α
× percent
Cost increase = (1 + Δ)
(1 + (1 + Δ)Ad/α)−α


α

AdΔ
− 1 × 100 percent
= (1 + Δ) 1 +
α + Ad
which is the required result.
For the given data, d = 1.25 def ects/cm2 , α = 0.5, Δ = 0.1, and A = 1 cm2 ,
we obtain




1.25 × 0.1
Cost increase = 1.1 1 +
0.5 × 1.25
= 13.86%

0.5



− 1 × 100 percent

There is a 13.86% increase in the chip cost due to DFT.

3.5

Defect level and fault coverage

Defect level, DL, is given by Equation 3.20 (p. 50 of the book), as follows:


DL = 1 −

β + T Af
β + Af

β

where T is the fault coverage, Af is the average number of faults on a chip of area
A, and β is a fault clustering parameter. Further manipulation of this equation
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leads to the following result:
(1 − DL)1/β =
or

T

=

β + T Af
β + Af
(β + Af )(1 − DL)1/β − β
× 100 percent
Af

which is the required result.

3.6

Defect level and fault coverage

Substituting the given fault density, f = 1.45 f aults/cm2 , the fault clustering parameter, β = 0.11, and the fault coverage, T = 0.95, in Equation 3.20 (page 50 of
the book), we obtain the defect level as,




β + T Af β
β + Af


0.11 + 0.95 × 1.0 × 1.45 0.11
= 1−
0.11 + 1.0 × 1.45
= 0.00522 or 5, 220 parts per million

DL(T ) = 1 −

The defect level is 5,220 parts per million (ppm).
(a) To obtain the fault coverage T for a required defect level of 1,000 ppm, we
substitute DL = 0.001 in the formula derived in Problem 3.5. Thus,
T

=

(0.11 + 1.45) × 0.9991/0.11 − 0.11
× 100 = 0.990
1.45

The required fault coverage is 99%.
(b) For a defect level of 500 ppm (DL = 0.0005), we get
T =

(0.11 + 1.45) × 0.99951/0.11 − 0.11
× 100 = 0.995
1.45

The required fault coverage is 99.5%.

3.7

Defect level

Defect level, DL(T ), given by Equation 3.20 (p. 50 of the book), can be written as:
(1 + T Af /β)β
(1 + Af /β)β
eT Af
= 1 − Af = 1 − e−Af (1−T ) , as β → ∞
e

DL(T ) = 1 −

Also, as β → ∞, Equation 3.19 (p. 50 of the book) gives the yield,


Y = 1+

Af
β

−β

= e−Af

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Substituting this expression for yield in the defect level, we get
DL(T ) = 1 − (e−Af )1−T = 1 − Y 1−T
which is the required result.

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Chapter 4: Fault Modeling
4.1

Boolean functions

An n-variable Boolean function is completely specified by its truth-table. The output
n
column in this table is a 2n -bit vector that can be in 22 distinct states, each
specifying a different Boolean function.

4.2

Initialization faults

In the circuit of Figure 4.1 (p. 62 of the book), let Qp denote the present state at
the output of the F F . Let the next state, i.e., the output of the AND gate, be Qn .
We can write the next state function, as
Qn = (Qp + A)(A + B)
If we set A = 1, the next state function, Qn = B, becomes independent of the
present state. That is, irrespective of the present state, the next state can be set to
a value, which is uniquely determined by primary inputs. This makes the fault-free
circuit initializable. When the fault A s-a-0 is present, the above equation reduces to
Qn = Qp . Thus, starting with Qp = X, Qn can never be changed to any value other
than X and, therefore, the circuit will remain uninitialized in the presence
of this fault.
Using the next-state expression, we can easily determine that no other single
stuck-at fault in this circuit will prevent initialization. For example, consider the
s-a-0 fault on the top branch of the fanout of A. The faulty next state function is
Qn = Qp (A + B), which can be set to 0, when Qp = X, by applying A = 1, B = 0.

4.3

Fault counting

See Section 4.5 (last paragraph on p. 70 of the book.)

4.4

Fault counting

For the circuit of Figure 4.6 (p. 72 of book), we have
Number of fault sites = PIs + gates + fanout branches
= 2 + 4 + 6 = 12
Therefore,
Number of single and multiple faults = 3number
12

= 3

of fault sites

−1

− 1 = 531, 440

The circuit has 531,440 single and multiple stuck-at faults.

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V

DD

A

P1
P2
C

A
C

B

N1

B

N2

Logic NAND gate.

Ground
CMOS NAND gate.
Circuit for Problem 4.5.

4.5

CMOS faults

(a) A two-input NAND gate is shown in the above figure. The following table gives
tests for transistor stuck-open (sop) faults:
Test No.
1
2
3
4

Fault
P1 sop
P2 sop
N1 sop
N2 sop

Test: Vector 1, Vector 2
11, 01
11, 10
01, 11 or 10, 11 or 00, 11
01, 11 or 10, 11 or 00, 11

Notice that the sop faults of N1 and N2 have exactly the same tests. These two
faults are equivalent. Equivalence of transistor faults is discussed in the following
paper:
M.-L Flottes, C. Landrault and S. Provossoudovitch, “Fault Modeling and Fault
Equivalence in CMOS Technology,” J. Electronic Testing: Theory and Applications,
vol. 2, pp. 229-241, August 1991.
(b) The following sequence of four vectors contains one vector pair for each fault in
the above table:
11, 01, 11, 10
Notice that this sequence also detects all single stuck-at faults in the logic model of
the NAND gate.
(c) A stuck-at fault in a signal affects two transistors in the two-input NAND gate.
For example, the fault A s-a-1 will mean that N1 remains permanently shorted
(N1-ssh) and P1 remains permanently open (P1-sop). The following table gives all
equivalences:

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Stuck-at fault
A s-a-1
B s-a-1
C s-a-1
A s-a-0
B s-a-0
C s-a-0

Equivalent transistor faults
N1-ssh and P1-sop
N1-ssh and P2-sop
(P1-ssh or P2-ssh) and (N1-sop or N2-sop)
N1-sop and P1-ssh
N2-sop and P2-ssh
N1-ssh, N2-ssh, P1-sop and P2-sop

Notice that the three equivalent faults, A s-a-0, B s-a-0 and C s-a-0, are actually
caused by different faulty transistors. They are detected by the same test (11).

4.6

Fault models

See Section 4.4 in the book.

4.7

Fault indistinguishability

Without loss of information we will write a function f (V ) as f . Thus, the left hand
side of Equation 4.3 is:
[f0 ⊕ f1 ] ⊕ [f0 ⊕ f2 ]
= [f0 f1 + f0 f1 ] ⊕ [f0 f2 + f0 f2 ]
= (f0 f1 + f0 f1 )(f0 f2 + f0 f2 ) + (f0 f1 + f0 f1 )(f0 f2 + f0 f2 )
= (f0 f1 + f0 f1 )(f0 f2 )(f0 f2 ) + (f0 f1 )(f0 f1 )(f0 f2 + f0 f2 )
= (f0 f1 + f0 f1 )(f0 + f2 )(f0 + f2 ) + (f0 + f1 )(f0 + f1 )(f0 f2 + f0 f2 )
= (f0 f1 + f0 f1 )(f0 f2 + f0 f2 ) + (f0 f1 + f0 f1 )(f0 f2 + f0 f2 )
= f0 f1 f2 + f0 f1 f2 + f0 f1 f2 + f0 f1 f2
= (f1 f2 )(f0 + f0 ) + f1 f2 (f0 + f0 )
= f1 f2 + f1 f2
= f1 ⊕ f2
= Left hand side of Equation 4.4
This completes the derivation of Equation 4.4 from Equation 4.3.

4.8

Functional equivalence

Faulty functions for the circuit of Figure 4.12 corresponding to the two faults are:
i(c s − a − 0) = b(ab) = ab
i(f s − a − 1) = (a + b)a = ab
The two faulty functions are indistinguishable and hence the two faults are equivalent.

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4.9

Functional equivalence

Faulty functions for the circuit of Figure 4.6 corresponding to the two faults are:
z(c s − a − 1) = ab.(ab.b)
= ab.(ab + b) = ab
z(f s − a − 1) = ab
The two faulty functions are indistinguishable and hence the faults are equivalent.

4.10

Fault collapsing for test generation

The circuit of Figure 4.9 has 18 single stuck-at faults. Gate-level fault equivalence,
as shown in the following figure, reduces the number to 12. The faults in shaded
boxes have been collapsed as shown by arrows. Many ATPG and fault simulation

A

B

sa0
sa1

sa0
sa1

sa0 sa1

A1

sa0 B2
sa1
sa0
A2
sa1
B1
sa0 sa1

sa0
sa1
sa0

sa0

C

sa1

sa1

programs will collapse faults as shown above. However, functional fault collapsing
can further reduce the number of faults to 10. As shown in Example 4.11 (see page
75 of the book), the s-a-1 faults on A1 and B1 are equivalent, and so are the s-a-1
faults on A2 and B2.
Whether we take the set of 12 faults or the set of 10 faults, their
detection requires all four input vectors.

4.11

Equivalence and dominance fault collapsing

(a) The given circuit is shown below with fault sites marked by numbers. The
number of potential fault sites is 18. The total number of faults is 36.
(b) The figure shows deletion of equivalent faults using an output to input pass.
Of the 36 faults, 20 remain, giving a collapse ratio 20/36 = 0.56.
(c) Checkpoint lines are shown by boldface numbers. These are three PIs and seven
fanout branches. Line 2 fans out to 4 and 5. Line 3 fans out to 6, 7 and 8.
Line 10 fans out to 12 and 13. There are ten checkpoints and 20 checkpoint
faults. Further, s-a-0 faults on lines 6 and 12 are equivalent and any one of
them can be chosen. Similarly, s-a-0 faults on 7 and 13 are equivalent, and so
are s-a-0 on 5 and s-a-1 on 8. Thus, the size of the fault set is reduced to 17,
giving a collapse ratio 17/36 = 0.47.
c
Solution Manual V1.4 – M.
L. Bushnell and V. D. Agrawal – For Teachers only

Page 16

sa0
9 sa1

sa0

1 sa1

sa0
sa1

2

sa0
sa0 sa1
sa1 4

6
sa0
sa1
10

3
sa0
sa1

sa0
sa1

Checkpoints are shown in boldface

14

12

sa0
sa1

sa0
sa1

7

sa0
sa1

sa0
sa1

13

15

sa0
sa1

8

sa0
sa1
16

11

sa0
sa1

18
sa0
sa1

17
sa0
sa1
sa0
sa1

5

Deleted due to
equivalence

Circuit for Problem 4.11: (b) Equivalence collapse ratio = 20/36 = 0.56
(c) Dominance (uncollapsed faults at checkpoints) collapse ratio = 17/36 = 0.47

4.12

Dominance fault collapsing

(a) Checkpoints are defined for the signals in a combinational circuit. These signals
are the interconnects between Boolean gates, a fact not always explicitly stated. To
avoid ambiguity, the definition on page 78 of the book should read as:
Definition 4.7 Checkpoints. Primary inputs and fanout branches of a combinational circuit consisting only of Boolean gates are called the checkpoints.
To find checkpoints of the circuit of Figure 4.12, we must replace the exclusiveOR (XOR) function by a primitive Boolean gate implementation. AND, OR, NAND,
NOR and NOT are called the primitive Boolean gates. Functions such as XOR are
sometimes referred to as complex gates. In the following figure, we have assumed
one such implementation. Our result is, therefore, based on this assumption. Other
implementations of the XOR function are possible and can give a different set of
checkpoints.
c
a

d

d1

e1
b

XOR
i

d2

k

e
e2
f
g

h

There are nine checkpoints in this circuit. These include three primary inputs,
a, b and c, and six fanout branches, d1, d2, f , e1, e2 and g. The checkpoint fault
set consists of eighteen faults – s-a-0 and s-a-1 faults on the nine lines.
Notice that lines d and e of the original circuit are not checkpoints. If we did
c
Solution Manual V1.4 – M.
L. Bushnell and V. D. Agrawal – For Teachers only

Page 17

not model the XOR block with Boolean gates, then those lines will appear to be
checkpoints, whose number will be fourteen. However, detection of those faults will
not guarantee detection of faults on the fanouts that are internal to the XOR block.
Considering the Boolean gate structure, a fault on d corresponds to a simultaneous
(multiple) fault on d1 and d2 and, in general, the detection of a multiple fault is not
equivalent to detection of the component faults.
(b) We evaluate the output function k corresponding to the two faults:
k(d s − a − 0)
k(g s − a − 1)

=

c+b+a+b

=

c + b + ab

=

c + ab + ab + a

= c + ab + a
The two faulty functions are shown by Karnaugh maps below. In both cases, the
functions have exactly one false minterm, abc. Since the two faulty functions
are identical the corresponding faults are equivalent.
false minterm

b

false minterm

b

c

a

b

ab

c

a
c
k with d s-a-0

ab

c

a

k with g s-a-1

Note: this type of fault equivalence is functional and is often difficult to find by
typical fault analysis tools, which rely on structurally identifiable equivalences.

c
Solution Manual V1.4 – M.
L. Bushnell and V. D. Agrawal – For Teachers only

Page 18

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