ARM® Cortex® M4 32b MCU+FPU, 225DMIPS, Up To 512kB Flash/128+4KB RAM, USB OTG HS/FS, 17 TIMs, 3 ADCs, 20 Comm. Interfaces Cortex Manual

User Manual:

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Table 1. Device summary
1 Introduction
2 Description
- Table 2. STM32F446xC/E features and peripheral counts
- 2.1 Compatibility with STM32F4 family
3 Functional overview
4 Pinout and pin description
5 Memory mapping
- Table 12. STM32F446xC/E register boundary addresses
6 Electrical characteristics
7 Package information
8 Part numbering
- Table 118. Ordering information scheme
Appendix A Application block diagrams
- A.1 USB OTG full speed (FS) interface solutions
- A.2 USB OTG high speed (HS) interface solutions
Revision history
- Table 119. Document revision history

This is information on a product in full production.

September 2016 DocID027107 Rev 6 1/202

STM32F446xC/E

ARM

Cortex

-M4 32b MCU+FPU, 225DMIPS, up to 512kB Flash/128+4KB RAM,

USB OTG HS/FS, 17 TIMs, 3 ADCs, 20 comm. interfaces

Datasheet - production data

Features

•Core: ARM® 32-bit Cortex®-M4 CPU with FPU,

Adaptive real-time accelerator (ART

Accelerator™) allowing 0-wait state execution

from Fl ash memory, frequency up to 180 MHz,

MPU, 225 DMIPS/1.25 DMIPS/MHz

(Dhrystone 2.1), and DSP instructions

•Memories

– 512 kB of Flash memory

– 128 KB of SRAM

– Flexible external memory controller with up

to 16-bit data bus:

SRAM,PSRAM,SDRAM/LPSDR SDRAM,

Flash NOR/NAND memories

– Dual mode Quad SPI interface

•LCD parallel interface, 8080/6800 modes

•Clock, reset and supply management

– 1.7 V to 3.6 V application supply and I/Os

– POR, PDR, PVD and BOR

– 4-to-26 MHz crystal oscillator

– Internal 16 MHz factory-trimmed RC (1%

accuracy)

– 32 kHz oscillator for RTC with calibration

– Internal 32 kHz RC with calibration

•Low power

– Sleep, Stop and Standby modes

–V

BAT supply for RTC, 20×32 bit backup

registers + optional 4 KB backup SRAM

•3×12-bit, 2.4 MSPS ADC: up to 24 channels

and 7.2 MSPS in triple interleaved mode

•2×12-bit D/A converters

•General-purpose DMA: 16-stream DMA

controller with FIFOs and burst support

•Up to 17 timers: 2x watchdog, 1x SysTick timer

and up to twelve 16-bit and two 32-bit timers up

to 180 MHz, each with up to 4 IC/OC/PWM or

pulse counter

•Debug mode

– SWD & JTAG interfaces

–Cortex

®-M4 Trace Macrocell™

•Up to 114 I/O ports with interrupt capability

– Up to 111 fast I/Os up to 90 MHz

– Up to 112 5 V-tolerant I/Os

•Up to 20 communication interfaces

– SPDIF-Rx

– Up to 4 × I2C interfaces (SMBus/PMBus)

– Up to 4 USARTs/2 UARTs (11.25 Mbit/s,

ISO7816 interface, LIN, IrDA, modem

control)

– Up to 4 SPIs (45 Mbits/s), 3 with muxed I2S

for audio class accuracy via internal audio

PLL or external clock

– 2 x SAI (serial audio interface)

– 2 × CAN (2.0B Active)

– SDIO interface

– Consumer electronics control (CEC) I/F

•Advanced connectivity

– USB 2.0 full-speed device/host/OTG

controller with on-chip PHY

– USB 2.0 high-speed/full-speed

device/host/OTG controller with dedicated

DMA, on-chip full-speed PHY and ULPI

– Dedicated USB power rail enabling on-chip

PHYs operation throughout the entire MCU

power supply range

•8- to 14-bit parallel camera interface up to

54 Mbytes/s

•CRC calculation unit

•RTC: subsecond accuracy, hardware calendar

•96-bit unique ID

Table 1. Device summary

Reference Part number

STM32F446xC/E

STM32F446MC, STM32F446ME,

STM32F446RC, STM32F446RE,

STM32F446VC, STM32F446VE,

STM32F446ZC, STM32F446ZE.

LQFP64 (10 × 10mm)

LQFP100 (14 × 14mm)

LQFP144 (20 x 20 mm) UFBGA144 (7 x 7 mm)

&"'!

UFBGA144 (10 x 10 mm) WLCSP 81

www.st.com

Contents STM32F446xC/E

2/202 DocID027107 Rev 6

Contents

1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2.1 Compatibility with STM32F4 family . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

3 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

3.1 ARM® Cortex®-M4 with FPU and embedded Flash and SRAM . . . . . . . 17

3.2 Adaptive real-time memory accelerator (ART Accelerator™) . . . . . . . . . 17

3.3 Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

3.4 Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

3.5 CRC (cyclic redundancy check) calculation unit . . . . . . . . . . . . . . . . . . . 18

3.6 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

3.7 Multi-AHB bus matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

3.8 DMA controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

3.9 Flexible memory controller (FMC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

3.10 Quad SPI memory interface (QUADSPI) . . . . . . . . . . . . . . . . . . . . . . . . . 20

3.11 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . . 21

3.12 External interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . . . . 21

3.13 Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

3.14 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

3.15 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

3.16 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

3.16.1 Internal reset ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

3.16.2 Internal reset OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

3.17 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

3.17.1 Regulator ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

3.17.2 Regulator OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

3.17.3 Regulator ON/OFF and internal reset ON/OFF availability . . . . . . . . . . 27

3.18 Real-time clock (RTC), backup SRAM and backup registers . . . . . . . . . . 28

3.19 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

3.20 VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

3.21 Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

DocID027107 Rev 6 3/202

STM32F446xC/E Contents

3.21.1 Advanced-control timers (TIM1, TIM8) . . . . . . . . . . . . . . . . . . . . . . . . . 32

3.21.2 General-purpose timers (TIMx) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

3.21.3 Basic timers TIM6 and TIM7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

3.21.4 Independent watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

3.21.5 Window watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

3.21.6 SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

3.22 Inter-integrated circuit interface (I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

3.23 Universal synchronous/asynchronous receiver transmitters (USART) . . 34

3.24 Serial peripheral interface (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

3.25 HDMI (high-definition multimedia interface) consumer

electronics control (CEC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

3.26 Inter-integrated sound (I2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

3.27 SPDIF-RX Receiver Interface (SPDIFRX) . . . . . . . . . . . . . . . . . . . . . . . . 35

3.28 Serial Audio interface (SAI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

3.29 Audio PLL (PLLI2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

3.30 Serial Audio Interface PLL(PLLSAI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

3.31 Secure digital input/output interface (SDIO) . . . . . . . . . . . . . . . . . . . . . . . 36

3.32 Controller area network (bxCAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

3.33 Universal serial bus on-the-go full-speed (OTG_FS) . . . . . . . . . . . . . . . . 37

3.34 Universal serial bus on-the-go high-speed (OTG_HS) . . . . . . . . . . . . . . . 37

3.35 Digital camera interface (DCMI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

3.36 General-purpose input/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . . 38

3.37 Analog-to-digital converters (ADCs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

3.38 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39

3.39 Digital-to-analog converter (DAC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39

3.40 Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . . 39

3.41 Embedded Trace Macrocell™ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

4 Pinout and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

5 Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67

6 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72

6.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72

6.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72

Contents STM32F446xC/E

4/202 DocID027107 Rev 6

6.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72

6.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72

6.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72

6.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72

6.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73

6.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 74

6.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74

6.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76

6.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76

6.3.2 VCAP_1/VCAP_2 external capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . 78

6.3.3 Operating conditions at power-up / power-down (regulator ON) . . . . . . 79

6.3.4 Operating conditions at power-up / power-down (regulator OFF) . . . . . 79

6.3.5 Reset and power control block characteristics . . . . . . . . . . . . . . . . . . . 80

6.3.6 Over-drive switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 81

6.3.7 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81

6.3.8 Wakeup time from low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . 101

6.3.9 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 102

6.3.10 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 107

6.3.11 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108

6.3.12 PLL spread spectrum clock generation (SSCG) characteristics . . . . . 110

6.3.13 Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112

6.3.14 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114

6.3.15 Absolute maximum ratings (electrical sensitivity) . . . . . . . . . . . . . . . . 116

6.3.16 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 117

6.3.17 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118

6.3.18 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123

6.3.19 TIM timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124

6.3.20 Communications interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124

6.3.21 12-bit ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141

6.3.22 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 147

6.3.23 VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148

6.3.24 Reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148

6.3.25 DAC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148

6.3.26 FMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152

6.3.27 Camera interface (DCMI) timing specifications . . . . . . . . . . . . . . . . . . 172

6.3.28 SD/SDIO MMC card host interface (SDIO) characteristics . . . . . . . . . 173

6.3.29 RTC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175

DocID027107 Rev 6 5/202

STM32F446xC/E Contents

7 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 176

7.1 LQFP64 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 176

7.2 LQFP100 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179

7.3 LQFP144 package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182

7.4 UFBGA144 7 x 7 mm package information . . . . . . . . . . . . . . . . . . . . . . 186

7.5 UFBGA144 10 x 10 mm package information . . . . . . . . . . . . . . . . . . . . 189

7.6 WLCSP81 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192

7.7 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195

8 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196

Appendix A Application block diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197

A.1 USB OTG full speed (FS) interface solutions . . . . . . . . . . . . . . . . . . . . . 197

A.2 USB OTG high speed (HS) interface solutions . . . . . . . . . . . . . . . . . . . . 199

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200

List of figures STM32F446xC/E

6/202 DocID027107 Rev 6

List of figures

Figure 1. Compatible board design for LQFP100 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 2. Compatible board for LQFP64 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 3. STM32F446xC/E block diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Figure 4. STM32F446xC/E and Multi-AHB matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 5. VDDUSB connected to an external independent power supply . . . . . . . . . . . . . . . . . . . . . 23

Figure 6. Power supply supervisor interconnection with internal reset OFF . . . . . . . . . . . . . . . . . . . 24

Figure 7. Regulator OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Figure 8. Startup in regulator OFF: slow VDD slope

power-down reset risen after VCAP_1/VCAP_2 stabilization . . . . . . . . . . . . . . . . . . . . . . . . . 27

Figure 9. Startup in regulator OFF mode: fast VDD slope

power-down reset risen before VCAP_1/VCAP_2 stabilization. . . . . . . . . . . . . . . . . . . . . . . . 27

Figure 10. STM32F446xC/xE LQFP64 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

Figure 11. STM32F446xC/xE LQFP100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

Figure 12. STM32F446xC LQFP144 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43

Figure 13. STM32F446xC/xE WLCSP81 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

Figure 14. STM32F446xC/xE UFBGA144 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

Figure 15. Memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67

Figure 16. Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72

Figure 17. Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72

Figure 18. Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73

Figure 19. Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74

Figure 20. External capacitor CEXT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79

Figure 21. Typical VBAT current consumption

(RTC ON/backup RAM OFF and LSE in low power mode) . . . . . . . . . . . . . . . . . . . . . . . . 91

Figure 22. Typical VBAT current consumption

(RTC ON/backup RAM OFF and LSE in high drive mode). . . . . . . . . . . . . . . . . . . . . . . . . 92

Figure 23. High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . 104

Figure 24. Low-speed external clock source AC timing diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . 104

Figure 25. Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105

Figure 26. Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106

Figure 27. LACCHSI versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107

Figure 28. ACCLSI versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108

Figure 29. PLL output clock waveforms in center spread mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112

Figure 30. PLL output clock waveforms in down spread mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112

Figure 31. FT I/O input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120

Figure 32. I/O AC characteristics definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123

Figure 33. Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124

Figure 34. I2C bus AC waveforms and measurement circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126

Figure 35. FMPI2C timing diagram and measurement circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128

Figure 36. SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130

Figure 37. SPI timing diagram - slave mode and CPHA = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131

Figure 38. SPI timing diagram - master mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131

Figure 39. I2S slave timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135

Figure 40. I2S master timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135

Figure 41. SAI master timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137

Figure 42. SAI slave timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137

Figure 43. USB OTG full speed timings: definition of data signal rise and fall time. . . . . . . . . . . . . . 138

Figure 44. ULPI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140

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STM32F446xC/E List of figures

Figure 45. ADC accuracy characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144

Figure 46. Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145

Figure 47. Power supply and reference decoupling (VREF+ not connected to VDDA). . . . . . . . . . . . . 146

Figure 48. Power supply and reference decoupling (VREF+ connected to VDDA). . . . . . . . . . . . . . . . 147

Figure 49. 12-bit buffered/non-buffered DAC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151

Figure 50. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms . . . . . . . . . . . . . . 153

Figure 51. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms . . . . . . . . . . . . . . 155

Figure 52. Asynchronous multiplexed PSRAM/NOR read waveforms. . . . . . . . . . . . . . . . . . . . . . . . 156

Figure 53. Asynchronous multiplexed PSRAM/NOR write waveforms . . . . . . . . . . . . . . . . . . . . . . . 158

Figure 54. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 160

Figure 55. Synchronous multiplexed PSRAM write timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162

Figure 56. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 164

Figure 57. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165

Figure 58. NAND controller waveforms for read access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167

Figure 59. NAND controller waveforms for write access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167

Figure 60. NAND controller waveforms for common memory read access . . . . . . . . . . . . . . . . . . . . 168

Figure 61. NAND controller waveforms for common memory write access. . . . . . . . . . . . . . . . . . . . 168

Figure 62. SDRAM read access waveforms (CL = 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169

Figure 63. SDRAM write access waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171

Figure 64. DCMI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173

Figure 65. SDIO high-speed mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173

Figure 66. SD default mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174

Figure 67. LQFP64-10x10 mm 64 pin low-profile quad flat package outline . . . . . . . . . . . . . . . . . . . 176

Figure 68. LQFP64 Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177

Figure 69. LQFP64 marking example (package top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178

Figure 70. LQFP100, 14 x 14 mm 100-pin low-profile quad flat package outline . . . . . . . . . . . . . . . 179

Figure 71. LQFP100 - 100-pin, 14 x 14 mm low-profile quad flat

recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180

Figure 72. LQFP100 marking example (package top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181

Figure 73. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package outline . . . . . . . . . . . . . . . 182

Figure 74. LQFP144 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184

Figure 75. LQFP144 marking example (package top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185

Figure 76. UFBGA144 - 144-pin, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball

grid array package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186

Figure 77. UFBGA144 - 144-ball, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball

grid array package recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187

Figure 78. UQFP144 7 x 7 mm marking example (package top view). . . . . . . . . . . . . . . . . . . . . . . . 188

Figure 79. UFBGA144 - 144-pin, 10 x 10 mm, 0.80 mm pitch, ultra fine pitch ball

grid array package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189

Figure 80. UFBGA144 - 144-pin, 10 x 10 mm, 0.80 mm pitch, ultra fine pitch ball

grid array package recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190

Figure 81. UQFP144 10 x 10 mm marking example (package top view). . . . . . . . . . . . . . . . . . . . . . 191

Figure 82. WLCSP81 - 81-pin, 3.693 x 3.815 mm, 0.4 mm pitch wafer level chip scale

package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192

Figure 83. WLCSP81- 81-pin, 4.4084 x 3.7594 mm, 0.4 mm pitch wafer level chip scale

package recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193

Figure 84. WLCSP81 10 x 10 mm marking example (package top view) . . . . . . . . . . . . . . . . . . . . . 194

Figure 85. USB controller configured as peripheral-only and used in Full speed mode . . . . . . . . . . 197

Figure 86. USB controller configured as host-only and used in full speed mode. . . . . . . . . . . . . . . . 197

Figure 87. USB controller configured in dual mode and used in full speed mode . . . . . . . . . . . . . . . 198

Figure 88. USB controller configured as peripheral, host, or dual-mode

and used in high speed mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199

List of tables STM32F446xC/E

8/202 DocID027107 Rev 6

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table 2. STM32F446xC/E features and peripheral counts. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Table 3. Voltage regulator configuration mode versus device operating mode . . . . . . . . . . . . . . . . 25

Table 4. Regulator ON/OFF and internal reset ON/OFF availability. . . . . . . . . . . . . . . . . . . . . . . . . 27

Table 5. Voltage regulator modes in stop mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

Table 6. Timer feature comparison. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

Table 7. Comparison of I2C analog and digital filters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

Table 8. USART feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Table 9. Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

Table 10. STM32F446xx pin and ball descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

Table 11. Alternate function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59

Table 12. STM32F446xC/E register boundary addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68

Table 13. Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74

Table 14. Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75

Table 15. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75

Table 16. General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76

Table 17. Limitations depending on the operating power supply range . . . . . . . . . . . . . . . . . . . . . . . 78

Table 18. VCAP_1/VCAP_2 operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79

Table 19. Operating conditions at power-up/power-down (regulator ON) . . . . . . . . . . . . . . . . . . . . . 79

Table 20. Operating conditions at power-up / power-down (regulator OFF). . . . . . . . . . . . . . . . . . . . 79

Table 21. reset and power control block characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80

Table 22. Over-drive switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81

Table 23. Typical and maximum current consumption in Run mode, code with data processing

running from Flash memory (ART accelerator enabled except prefetch) or RAM . . . . . . . 83

Table 24. Typical and maximum current consumption in Run mode, code with data processing

running from Flash memory (ART accelerator enabled with prefetch) or RAM . . . . . . . . . 84

Table 25. Typical and maximum current consumption in Run mode, code with data processing

running from Flash memory (ART accelerator disabled) . . . . . . . . . . . . . . . . . . . . . . . . . . 85

Table 26. Typical and maximum current consumption in Sleep mode . . . . . . . . . . . . . . . . . . . . . . . . 86

Table 27. Typical and maximum current consumptions in Stop mode . . . . . . . . . . . . . . . . . . . . . . . . 89

Table 28. Typical and maximum current consumptions in Standby mode . . . . . . . . . . . . . . . . . . . . . 90

Table 29. Typical and maximum current consumptions in VBAT mode. . . . . . . . . . . . . . . . . . . . . . . . 91

Table 30. Typical current consumption in Run mode, code with data processing

running from Flash memory or RAM, regulator ON

(ART accelerator enabled except prefetch), VDD=1.7 V . . . . . . . . . . . . . . . . . . . . . . . . . . 93

Table 31. Typical current consumption in Run mode, code with data processing running

from Flash memory, regulator OFF (ART accelerator enabled except prefetch). . . . . . . . 94

Table 32. Typical current consumption in Sleep mode, regulator ON, VDD=1.7 V . . . . . . . . . . . . . . 95

Table 33. Typical current consumption in Sleep mode, regulator OFF. . . . . . . . . . . . . . . . . . . . . . . . 96

Table 34. Switching output I/O current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97

Table 35. Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99

Table 36. Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102

Table 37. High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103

Table 38. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103

Table 39. HSE 4-26 MHz oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105

Table 40. LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106

Table 41. HSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107

Table 42. LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108

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STM32F446xC/E List of tables

Table 43. Main PLL characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108

Table 44. PLLI2S (audio PLL) characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109

Table 45. PLLISAI characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110

Table 46. SSCG parameters constraint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111

Table 47. Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112

Table 48. Flash memory programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113

Table 49. Flash memory programming with VPP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113

Table 50. Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114

Table 51. EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115

Table 52. EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116

Table 53. ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116

Table 54. Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117

Table 55. I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117

Table 56. I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118

Table 57. Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121

Table 58. I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121

Table 59. NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123

Table 60. TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124

Table 61. I2C characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125

Table 62. FMPI2C characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127

Table 63. SPI dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129

Table 64. QSPI dynamic characteristics in SDR Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132

Table 65. QSPI dynamic characteristics in DDR Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132

Table 66. I2S dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133

Table 67. SAI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136

Table 68. USB OTG full speed startup time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137

Table 69. USB OTG full speed DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138

Table 70. USB OTG full speed electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139

Table 71. USB HS DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139

Table 72. USB HS clock timing parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139

Table 73. Dynamic characteristics: USB ULPI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140

Table 74. ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141

Table 75. ADC static accuracy at fADC = 18 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142

Table 76. ADC static accuracy at fADC = 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143

Table 77. ADC static accuracy at fADC = 36 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143

Table 78. ADC dynamic accuracy at fADC = 18 MHz - limited test conditions . . . . . . . . . . . . . . . . . 143

Table 79. ADC dynamic accuracy at fADC = 36 MHz - limited test conditions . . . . . . . . . . . . . . . . . 143

Table 80. Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147

Table 81. Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147

Table 82. VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148

Table 83. internal reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148

Table 84. Internal reference voltage calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148

Table 85. DAC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148

Table 86. Asynchronous non-multiplexed SRAM/PSRAM/NOR -

read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154

Table 87. Asynchronous non-multiplexed SRAM/PSRAM/NOR read -

NWAIT timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154

Table 88. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings . . . . . . . . . . . . . . . . . 155

Table 89. Asynchronous non-multiplexed SRAM/PSRAM/NOR write -

NWAIT timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156

Table 90. Asynchronous multiplexed PSRAM/NOR read timings. . . . . . . . . . . . . . . . . . . . . . . . . . . 157

Table 91. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings . . . . . . . . . . . . . . . . . . . . 157

List of tables STM32F446xC/E

10/202 DocID027107 Rev 6

Table 92. Asynchronous multiplexed PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . . . . . . . . . 159

Table 93. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings . . . . . . . . . . . . . . . . . . . . 159

Table 94. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 161

Table 95. Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163

Table 96. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 164

Table 97. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166

Table 98. Switching characteristics for NAND Flash read cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . 168

Table 99. Switching characteristics for NAND Flash write cycles. . . . . . . . . . . . . . . . . . . . . . . . . . . 169

Table 100. SDRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170

Table 101. LPSDR SDRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170

Table 102. SDRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171

Table 103. LPSDR SDRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172

Table 104. DCMI characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172

Table 105. Dynamic characteristics: SD / MMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174

Table 106. Dynamic characteristics: eMMC characteristics VDD = 1.7 V to 1.9 V. . . . . . . . . . . . . . . 175

Table 107. RTC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175

Table 108. LQFP64 – 10 x 10 mm low-profile quad flat package mechanical data . . . . . . . . . . . . . . 176

Table 109. LQPF100, 14 x 14 mm 100-pin low-profile quad flat

package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179

Table 110. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package mechanical data . . . . . . . 183

Table 111. UFBGA144 - 144-pin, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball

grid array package mechanical data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186

Table 112. UFBGA144 recommended PCB design rules (0.50 mm pitch BGA) . . . . . . . . . . . . . . . . 187

Table 113. UFBGA144 - 144-pin, 10 x 10 mm, 0.80 mm pitch, ultra fine pitch ball

grid array package mechanical data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189

Table 114. UFBGA144 recommended PCB design rules (0.80 mm pitch BGA) . . . . . . . . . . . . . . . . 190

Table 115. WLCSP81- 81-pin, 3.693 x 3.815 mm, 0.4 mm pitch wafer level chip scale

package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192

Table 116. WLCSP81 recommended PCB design rules (0.4 mm pitch) . . . . . . . . . . . . . . . . . . . . . . 193

Table 117. Package thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195

Table 118. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196

Table 119. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200

DocID027107 Rev 6 11/202

STM32F446xC/E Introduction

1 Introduction

This document provides the description of the STM32F446xC/E products.

The STM32F446xC/E document should be read in conjunction with the STM32F4xx

reference manual.

For information on the Cortex®-M4 core, please refer to the Cortex®-M4 programming

manual (PM0214), available from the www.st.com.

Description STM32F446xC/E

12/202 DocID027107 Rev 6

2 Description

The STM32F446xC/E devices are based on the high-performance ARM® Cortex®-M4 32-bit

RISC core operating at a frequency of up to 180 MHz. The Cortex-M4 core features a

Floating point unit (FPU) single precision which supports all ARM® single-precision data-

processing instructions and data types. It also implements a full set of DSP instructions and

a memory protection unit (MPU) which enhances application security.

The STM32F446xC/E devices incorporate high-speed embedded memories (Flash memory

up to 512 Kbyte, up to 128 Kbyte of SRAM), up to 4 Kbytes of backup SRAM, and an

extensive range of enhanced I/Os and peripherals connected to two APB buses, two AHB

buses and a 32-bit multi-AHB bus matrix.

All devices offer three 12-bit ADCs, two DACs, a low-power RTC, twelve general-purpose

16-bit timers including two PWM timers for motor control, two general-purpose 32-bit timers.

They also feature standard and advanced communication interfaces.

•Up to four I2Cs;

•Four SPIs, three I2Ss full simplex. To achieve audio class accuracy, the I2S peripherals

can be clocked via a dedicated internal audio PLL or via an external clock to allow

synchronization;

•Four USARTs plus two UARTs;

•An USB OTG full-speed and an USB OTG high-speed with full-speed capability (with

the ULPI), both with dedicated power rails allowing to use them throughout the entire

power range;

•Two CANs;

•Two SAIs serial audio interfaces. To achieve audio class accuracy, the SAIs can be

clocked via a dedicated internal audio PLL;

•An SDIO/MMC interface;

•Camera interface;

•HDMI-CEC;

•SPDIF Receiver (SPDIFRx);

•QuadSPI.

Advanced peripherals include an SDIO, a flexible memory control (FMC) interface, a

camera interface for CMOS sensors. Refer to Table 2: STM32F446xC/E features and

peripheral counts for the list of peripherals available on each part number.

The STM32F446xC/E devices operates in the –40 to +105 °C temperature range from a 1.7

to 3.6 V power supply.

The supply voltage can drop to 1.7 V with the use of an external power supply supervisor

(refer to Section 3.16.2: Internal reset OFF). A comprehensive set of power-saving mode

allows the design of low-power applications.

The STM32F446xC/E devices offer devices in 6 packages ranging from 64 pins to 144 pins.

The set of included peripherals changes with the device chosen.

DocID027107 Rev 6 13/202

STM32F446xC/E Description

These features make the STM32F446xC/E microcontrollers suitable for a wide range of

applications:

•Motor drive and application control

•Medical equipment

•Industrial applications: PLC, inverters, circuit breakers

•Printers, and scanners

•Alarm systems, video intercom, and HVAC

•Home audio appliances

Table 2. STM32F446xC/E features and peripheral counts

Peripherals STM32F44

6MC

STM32F44

6ME

STM32F44

6RC

STM32F44

6RE

STM32F44

6VC

STM32F44

6VE

STM32F44

6ZC

STM32F44

6ZE

Flash memory in Kbytes 256 512 256 512 256 512 256 512

SRAM in

Kbytes

System 128 (112+16)

Backup 4

FMC memory controller No Yes(1)

Timers

General-

purpose 10

Advanced-

control 2

Basic 2

Communication

interfaces

SPI / I2S 4/3 (simplex)(2)

I2C 4/1 FMP +

USART/UART 4/2

USB OTG FS Yes (6-Endpoints)

USB OTG HS Yes (8-Endpoints)

CAN 2

SAI 2

SDIO Yes

SPDIF-Rx 1

HDMI-CEC 1

Quad SPI(3) 1

Camera interface Yes

GPIOs 635081114

12-bit ADC

Number of channels

14 16 16 24

12-bit DAC

Number of channels

Yes

Maximum CPU frequency 180 MHz

Operating voltage 1.8 to 3.6 V(4)

Operating temperatures

Ambient temperatures: –40 to +85 °C /–40 to +105 °C

Junction temperature: –40 to + 125 °C

Packages WLCSP81 LQFP64 LQFP100 LQFP144

UFBGA144

Description STM32F446xC/E

14/202 DocID027107 Rev 6

2.1 Compatibility with STM32F4 family

The STM32F446xC/xV is software and feature compatible with the STM32F4 family.

The STM32F446xC/xV can be used as drop-in replacement of the other STM32F4 products

but some slight changes have to be done on the PCB board.

Figure 1. Compatible board design for LQFP100 package

1. For the LQFP100 package, only FMC Bank1 or Bank2 are available. Bank1 can only support a multiplexed NOR/PSRAM memory using the

NE1 Chip Select. Bank2 can only support a 16- or 8-bit NAND Flash memory using the NCE2 Chip Select. The interrupt line cannot be used

since Port G is not available in this package.

2. The SPI1, SPI2 and SPI3 interfaces give the flexibility to work in an exclusive way in either the SPI mode or the I2S audio mode.

3. For the LQFP64 package, the Quad SPI is available with limited features.

4. VDD/VDDA minimum value of 1.7 V is obtained when the device operates in reduced temperature range, and with the use of an external

power supply supervisor (refer to Section 3.16.2: Internal reset OFF).

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DocID027107 Rev 6 15/202

STM32F446xC/E Description

Figure 2. Compatible board for LQFP64 package

Figure 3 shows the STM32F446xx block diagram.

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Description STM32F446xC/E

16/202 DocID027107 Rev 6

Figure 3. STM32F446xC/E block diagram

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DocID027107 Rev 6 17/202

STM32F446xC/E Functional overview

3 Functional overview

3.1 ARM® Cortex®-M4 with FPU and embedded Flash and SRAM

The ARM® Cortex®-M4 with FPU processor is the latest generation of ARM processors for

embedded systems. It was developed to provide a low-cost platform that meets the needs of

MCU implementation, with a reduced pin count and low-power consumption, while

delivering outstanding computational performance and an advanced response to interrupts.

The ARM® Cortex®-M4 with FPU core is a 32-bit RISC processor that features exceptional

code-efficiency, delivering the high-performance expected from an ARM core in the memory

size usually associated with 8- and 16-bit devices.

The processor supports a set of DSP instructions which allow efficient signal processing and

complex algorithm execution.

Its single precision FPU (floating point unit) speeds up software development by using

metalanguage development tools, while avoiding saturation.

The STM32F446xC/E family is compatible with all ARM tools and software.

Figure 3 shows the general block diagram of the STM32F446xC/E family.

Note: Cortex-M4 with FPU core is binary compatible with the Cortex-M3 core.

3.2 Adaptive real-time memory accelerator (ART Accelerator™)

The ART Accelerator™ is a memory accelerator which is optimized for STM32 industry-

standard ARM® Cortex®-M4 with FPU processors. It balances the inherent performance

advantage of the ARM® Cortex®-M4 with FPU over Flash memory technologies, which

normally requires the processor to wait for the Flash memory at higher frequencies.

To release the processor full 225 DMIPS performance at this frequency, the accelerator

implements an instruction prefetch queue and branch cache, which increases program

execution speed from the 128-bit Flash memory. Based on CoreMark benchmark, the

performance achieved thanks to the ART Accelerator is equivalent to 0 wait state program

execution from Flash memory at a CPU frequency up to 180 MHz.

3.3 Memory protection unit

The memory protection unit (MPU) is used to manage the CPU accesses to memory to

prevent one task to accidentally corrupt the memory or resources used by any other active

task. This memory area is organized into up to 8 protected areas that can in turn be divided

up into 8 subareas. The protection area sizes are between 32 bytes and the whole 4

gigabytes of addressable memory.

The MPU is especially helpful for applications where some critical or certified code has to be

protected against the misbehavior of other tasks. It is usually managed by an RTOS (real-

time operating system). If a program accesses a memory location that is prohibited by the

MPU, the RTOS can detect it and take action. In an RTOS environment, the kernel can

dynamically update the MPU area setting, based on the process to be executed.

The MPU is optional and can be bypassed for applications that do not need it.

Functional overview STM32F446xC/E

18/202 DocID027107 Rev 6

3.4 Embedded Flash memory

The devices embed a Flash memory of 512KB available for storing programs and data.

3.5 CRC (cyclic redundancy check) calculation unit

The CRC (cyclic redundancy check) calculation unit is used to get a CRC code from a 32-bit

data word and a fixed generator polynomial.

Among other applications, CRC-based techniques are used to verify data transmission or

storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of

verifying the Flash memory integrity. The CRC calculation unit helps compute a software

signature during runtime, to be compared with a reference signature generated at link-time

and stored at a given memory location.

3.6 Embedded SRAM

All devices embed:

•Up to 128Kbytes of system SRAM.

RAM memory is accessed (read/write) at CPU clock speed with 0 wait states.

•4 Kbytes of backup SRAM

This area is accessible only from the CPU. Its content is protected against possible

unwanted write accesses, and is retained in Standby or VBAT mode.

3.7 Multi-AHB bus matrix

The 32-bit multi-AHB bus matrix interconnects all the masters (CPU, DMAs, USB HS) and

the slaves Flash memory, RAM, QuadSPI, FMC, AHB and APB peripherals and ensures a

seamless and efficient operation even when several high-speed peripherals work

simultaneously.

DocID027107 Rev 6 19/202

STM32F446xC/E Functional overview

Figure 4. STM32F446xC/E and Multi-AHB matrix

3.8 DMA controller (DMA)

The devices feature two general-purpose dual-port DMAs (DMA1 and DMA2) with 8

streams each. They are able to manage memory-to-memory, peripheral-to-memory and

memory-to-peripheral transfers. They feature dedicated FIFOs for APB/AHB peripherals,

support burst transfer and are designed to provide the maximum peripheral bandwidth

(AHB/APB).

The two DMA controllers support circular buffer management, so that no specific code is

needed when the controller reaches the end of the buffer. The two DMA controllers also

have a double buffering feature, which automates the use and switching of two memory

buffers without requiring any special code.

Each stream is connected to dedicated hardware DMA requests, with support for software

trigger on each stream. Configuration is made by software and transfer sizes between

source and destination are independent.

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Functional overview STM32F446xC/E

20/202 DocID027107 Rev 6

The DMA can be used with the main peripherals:

•SPI and I2S

•I2C

•USART

•General-purpose, basic and advanced-control timers TIMx

•DAC

•SDIO

•Camera interface (DCMI)

•ADC

•SAI1/SAI2

•SPDIF Receiver (SPDIFRx)

•QuadSPI

3.9 Flexible memory controller (FMC)

All devices embed an FMC. It has seven Chip Select outputs supporting the following

modes: SDRAM/LPSDR SDRAM, SRAM, PSRAM, NOR Flash and NAND Flash. With the

possibility to remap FMC bank 1 (NOR/PSRAM 1 and 2) and FMC SDRAM bank 1/2 in the

Cortex-M4 code area.

Functionality overview:

•8-,16-bit data bus width

•Read FIFO for SDRAM controller

•Write FIFO

•Maximum FMC_CLK/FMC_SDCLK frequency for synchronous accesses is 90 MHz.

LCD parallel interface

The FMC can be configured to interface seamlessly with most graphic LCD controllers. It

supports the Intel 8080 and Motorola 6800 modes, and is flexible enough to adapt to

specific LCD interfaces. This LCD parallel interface capability makes it easy to build cost-

effective graphic applications using LCD modules with embedded controllers or high

performance solutions using external controllers with dedicated acceleration.

3.10 Quad SPI memory interface (QUADSPI)

All devices embed a Quad SPI memory interface, which is a specialized communication

interface targeting Single, Dual or Quad SPI flash memories. It can work in direct mode

through registers, external flash status register polling mode and memory mapped mode.

Up to 256 Mbytes external flash are memory mapped, supporting 8, 16 and 32-bit access.

Code execution is supported. The opcode and the frame format are fully programmable.

Communication can be either in Single Data Rate or Dual Data Rate.

DocID027107 Rev 6 21/202

STM32F446xC/E Functional overview

3.11 Nested vectored interrupt controller (NVIC)

The devices embed a nested vectored interrupt controller able to manage 16 priority levels,

and handle up to 91 maskable interrupt channels plus the 16 interrupt lines of the Cortex®-

M4 with FPU core.

•Closely coupled NVIC gives low-latency interrupt processing

•Interrupt entry vector table address passed directly to the core

•Allows early processing of interrupts

•Processing of late arriving, higher-priority interrupts

•Support tail chaining

•Processor state automatically saved

•Interrupt entry restored on interrupt exit with no instruction overhead

This hardware block provides flexible interrupt management features with minimum interrupt

latency.

3.12 External interrupt/event controller (EXTI)

The external interrupt/event controller consists of 23 edge-detector lines used to generate

interrupt/event requests. Each line can be independently configured to select the trigger

event (rising edge, falling edge, both) and can be masked independently. A pending register

maintains the status of the interrupt requests. The EXTI can detect an external line with a

pulse width shorter than the Internal APB2 clock period. Up to 114 GPIOs can be connected

to the 16 external interrupt lines.

3.13 Clocks and startup

On reset the 16 MHz internal RC oscillator is selected as the default CPU clock. The 16

MHz internal RC oscillator is factory-trimmed to offer 1% accuracy at 25 °C. The application

can then select as system clock either the RC oscillator or an external 4-26 MHz clock

source. This clock can be monitored for failure. If a failure is detected, the system

automatically switches back to the internal RC oscillator and a software interrupt is

generated (if enabled). This clock source is input to a PLL thus allowing to increase the

frequency up to 180 MHz. Similarly, full interrupt management of the PLL clock entry is

available when necessary (for example if an indirectly used external oscillator fails).

Several prescalers allow the configuration of the two AHB buses, the high-speed APB

(APB2) and the low-speed APB (APB1) domains. The maximum frequency of the two AHB

buses is 180 MHz while the maximum frequency of the high-speed APB domains is

90 MHz. The maximum allowed frequency of the low-speed APB domain is 45 MHz.

The devices embed a dedicated PLL (PLLI2S) and PLLSAI which allows to achieve audio

class performance. In this case, the I2S master clock can generate all standard sampling

frequencies from 8 kHz to 192 kHz.

Functional overview STM32F446xC/E

22/202 DocID027107 Rev 6

3.14 Boot modes

At startup, boot pins are used to select one out of three boot options:

•Boot from user Flash

•Boot from system memory

•Boot from embedded SRAM

The boot loader is located in system memory. It is used to reprogram the Flash memory

through a serial (UART, I2C, CAN, SPI and USB) communication interface. Refer to

application note AN2606 for details.

3.15 Power supply schemes

•VDD = 1.7 to 3.6 V: external power supply for I/Os and the internal regulator (when

enabled), provided externally through VDD pins.

•VSSA, VDDA = 1.7 to 3.6 V: external analog power supplies for ADC, DAC, Reset

blocks, RCs and PLL. VDDA and VSSA must be connected to VDD and VSS, respectively.

Note: VDD/VDDA minimum value of 1.7 V is obtained with the use of an external power supply

supervisor (refer to Section 3.16.2: Internal reset OFF). Refer to Table 3: Voltage regulator

configuration mode versus device operating mode to identify the packages supporting this

option.

•VBAT = 1.65 to 3.6 V: power supply for RTC, external clock 32 kHz oscillator and

backup registers (through power switch) when VDD is not present.

•VDDUSB can be connected either to VDD or an external independent power supply (3.0

to 3.6V) for USB transceivers.

For example, when device is powered at 1.8V, an independent power supply 3.3V can

be connected to VDDUSB. When the VDDUSB is connected to a separated power supply,

it is independent from VDD or VDDA but it must be the last supply to be provided and the

first to disappear. The following conditions VDDUSB must be respected:

– During power-on phase (VDD < VDD_MIN), VDDUSB should be always lower than

VDD

– During power-down phase (VDD < VDD_MIN), VDDUSB should be always lower

than VDD

– VDDUSB rising and falling time rate specifications must be respected.

– In operating mode phase, VDDUSB could be lower or higher than VDD:

– If USB (USB OTG_HS/OTG_FS) is used, the associated GPIOs powered by

VDDUSB are operating between VDDUSB_MIN and VDDUSB_MAX.The VDDUSB

supply both USB transceiver (USB OTG_HS and USB OTG_FS).

– If only one USB transceiver is used in the application, the GPIOs associated to

the other USB transceiver are still supplied by VDDUSB.

– If USB (USB OTG_HS/OTG_FS) is not used, the associated GPIOs powered

by VDDUSB are operating between VDD_MIN and VDD_MAX.

DocID027107 Rev 6 23/202

STM32F446xC/E Functional overview

Figure 5. VDDUSB connected to an external independent power supply

3.16 Power supply supervisor

3.16.1 Internal reset ON

On packages embedding the PDR_ON pin, the power supply supervisor is enabled by

holding PDR_ON high. On the other package, the power supply supervisor is always

enabled.

The device has an integrated power-on reset (POR)/ power-down reset (PDR) circuitry

coupled with a Brownout reset (BOR) circuitry. At power-on, POR/PDR is always active and

ensures proper operation starting from 1.8 V. After the 1.8 V POR threshold level is

reached, the option byte loading process starts, either to confirm or modify default BOR

thresholds, or to disable BOR permanently. Three BOR thresholds are available through

option bytes. The device remains in reset mode when VDD is below a specified threshold,

VPOR/PDR or VBOR, without the need for an external reset circuit.

The device also features an embedded programmable voltage detector (PVD) that monitors

the VDD/VDDA power supply and compares it to the VPVD threshold. An interrupt can be

generated when VDD/VDDA drops below the VPVD threshold and/or when VDD/VDDA is

higher than the VPVD threshold. The interrupt service routine can then generate a warning

message and/or put the MCU into a safe state. The PVD is enabled by software.

3.16.2 Internal reset OFF

This feature is available only on packages featuring the PDR_ON pin. The internal power-on

reset (POR) / power-down reset (PDR) circuitry is disabled through the PDR_ON pin.

An external power supply supervisor should monitor VDD and should maintain the device in

reset mode as long as VDD is below a specified threshold. PDR_ON should be connected to

VSS, to allows device to operate down to 1.7v. Refer to Figure 6: Power supply supervisor

interconnection with internal reset OFF.

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Functional overview STM32F446xC/E

24/202 DocID027107 Rev 6

Figure 6. Power supply supervisor interconnection with internal reset OFF

The VDD specified threshold, below which the device must be maintained under reset, is

1.7 V.

A comprehensive set of power-saving mode allows to design low-power applications.

When the internal reset is OFF, the following integrated features are no more supported:

•The integrated power-on reset (POR) / power-down reset (PDR) circuitry is disabled

•The brownout reset (BOR) circuitry must be disabled

•The embedded programmable voltage detector (PVD) is disabled

•VBAT functionality is no more available and VBAT pin should be connected to VDD.

All packages, except for the LQFP100/LQFP64, allow to disable the internal reset through

the PDR_ON signal.

3.17 Voltage regulator

The regulator has four operating modes:

•Regulator ON

– Main regulator mode (MR)

– Low power regulator (LPR)

– Power-down

•Regulator OFF

3.17.1 Regulator ON

On packages embedding the BYPASS_REG pin, the regulator is enabled by holding

BYPASS_REG low. On all other packages, the regulator is always enabled.

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DocID027107 Rev 6 25/202

STM32F446xC/E Functional overview

There are three power modes configured by software when the regulator is ON:

•MR mode used in Run/sleep modes or in Stop modes

– In Run/Sleep mode

The MR mode is used either in the normal mode (default mode) or the over-drive

mode (enabled by software). Different voltages scaling are provided to reach the

best compromise between maximum frequency and dynamic power consumption.

The over-drive mode allows operating at a higher frequency than the normal mode

for a given voltage scaling.

– In Stop modes

The MR can be configured in two ways during stop mode:

MR operates in normal mode (default mode of MR in stop mode)

MR operates in under-drive mode (reduced leakage mode).

•LPR is used in the Stop modes:

The LP regulator mode is configured by software when entering Stop mode.

Like the MR mode, the LPR can be configured in two ways during stop mode:

– LPR operates in normal mode (default mode when LPR is ON)

– LPR operates in under-drive mode (reduced leakage mode).

•Power-down is used in Standby mode.

The Power-down mode is activated only when entering in Standby mode. The regulator

output is in high impedance and the kernel circuitry is powered down, inducing zero

consumption. The contents of the registers and SRAM are lost.

Refer to Table 3 for a summary of voltage regulator modes versus device operating modes.

Two external ceramic capacitors should be connected on VCAP_1 and VCAP_2 pin.

All packages have the regulator ON feature.

3.17.2 Regulator OFF

This feature is available only on packages featuring the BYPASS_REG pin. The regulator is

disabled by holding BYPASS_REG high. The regulator OFF mode allows to supply

externally a V12 voltage source through VCAP_1 and VCAP_2 pins.

Table 3. Voltage regulator configuration mode versus device operating mode(1)

1. ‘-’ means that the corresponding configuration is not available.

Voltage regulator

configuration Run mode Sleep mode Stop mode Standby mode

Normal mode MR MR MR or LPR -

Over-drive

mode(2)

2. The over-drive mode is not available when VDD = 1.7 to 2.1 V.

MR MR - -

Under-drive mode - - MR or LPR -

Power-down

mode ---Yes

Functional overview STM32F446xC/E

26/202 DocID027107 Rev 6

Since the internal voltage scaling is not managed internally, the external voltage value must

be aligned with the targeted maximum frequency. The two 2.2 µF ceramic capacitors should

be replaced by two 100 nF decoupling capacitors.

When the regulator is OFF, there is no more internal monitoring on V12. An external power

supply supervisor should be used to monitor the V12 of the logic power domain. PA0 pin

should be used for this purpose, and act as power-on reset on V12 power domain.

In regulator OFF mode, the following features are no more supported:

•PA0 cannot be used as a GPIO pin since it allows to reset a part of the V12 logic power

domain which is not reset by the NRST pin.

•As long as PA0 is kept low, the debug mode cannot be used under power-on reset. As

a consequence, PA0 and NRST pins must be managed separately if the debug

connection under reset or pre-reset is required.

•The over-drive and under-drive modes are not available.

Figure 7. Regulator OFF

The following conditions must be respected:

•VDD should always be higher than VCAP_1 and VCAP_2 to avoid current injection

between power domains.

•If the time for VCAP_1 and VCAP_2 to reach V12 minimum value is faster than the time for

VDD to reach 1.7 V, then PA0 should be kept low to cover both conditions: until VCAP_1

and VCAP_2 reach V12 minimum value and until VDD reaches 1.7 V (see Figure 8).

•Otherwise, if the time for VCAP_1 and VCAP_2 to reach V12 minimum value is slower

than the time for VDD to reach 1.7 V, then PA0 could be asserted low externally (see

Figure 9).

•If VCAP_1 and VCAP_2 go below V12 minimum value and VDD is higher than 1.7 V, then a

reset must be asserted on PA0 pin.

Note: The minimum value of V12 depends on the maximum frequency targeted in the application.

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DocID027107 Rev 6 27/202

STM32F446xC/E Functional overview

Figure 8. Startup in regulator OFF: slow VDD slope

power-down reset risen after VCAP_1/VCAP_2 stabilization

1. This figure is valid whatever the internal reset mode (ON or OFF).

Figure 9. Startup in regulator OFF mode: fast VDD slope

power-down reset risen before VCAP_1/VCAP_2 stabilization

1. This figure is valid whatever the internal reset mode (ON or OFF).

3.17.3 Regulator ON/OFF and internal reset ON/OFF availability

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Table 4. Regulator ON/OFF and internal reset ON/OFF availability

Package Regulator ON Regulator OFF Internal reset ON Internal reset OFF

LQFP64

LQFP100 Yes No Yes No

Functional overview STM32F446xC/E

28/202 DocID027107 Rev 6

3.18 Real-time clock (RTC), backup SRAM and backup registers

The backup domain includes:

•The real-time clock (RTC)

•4 Kbytes of backup SRAM

•20 backup registers

The real-time clock (RTC) is an independent BCD timer/counter. Dedicated registers contain

the second, minute, hour (in 12/24 hour), week day, date, month, year, in BCD (binary-

coded decimal) format. Correction for 28, 29 (leap year), 30, and 31 day of the month are

performed automatically. The RTC provides a programmable alarm and programmable

periodic interrupts with wakeup from Stop and Standby modes. The sub-seconds value is

also available in binary format.

It is clocked by a 32.768 kHz external crystal, resonator or oscillator, the internal low-power

RC oscillator or the high-speed external clock divided by 128. The internal low-speed RC

has a typical frequency of 32 kHz. The RTC can be calibrated using an external 512 Hz

output to compensate for any natural quartz deviation.

Two alarm registers are used to generate an alarm at a specific time and calendar fields can

be independently masked for alarm comparison. To generate a periodic interrupt, a 16-bit

programmable binary auto-reload downcounter with programmable resolution is available

and allows automatic wakeup and periodic alarms from every 120 µs to every 36 hours.

A 20-bit prescaler is used for the time base clock. It is by default configured to generate a

time base of 1 second from a clock at 32.768 kHz.

The 4-Kbyte backup SRAM is an EEPROM-like memory area. It can be used to store data

which need to be retained in VBAT and standby mode. This memory area is disabled by

default to minimize power consumption (see Section 3.19: Low-power modes). It can be

enabled by software.

The backup registers are 32-bit registers used to store 80 bytes of user application data

when VDD power is not present. Backup registers are not reset by a system, a power reset,

or when the device wakes up from the Standby mode (see Section 3.19: Low-power

modes).

Additional 32-bit registers contain the programmable alarm subseconds, seconds, minutes,

hours, day, and date.

Like backup SRAM, the RTC and backup registers are supplied through a switch that is

powered either from the VDD supply when present or from the VBAT pin.

LQFP144 Yes No

Yes

PDR_ON

set to VDD

Yes

PDR_ON

set to VSS

UFBGA144 Yes

BYPASS_REG

set to Vss

Yes

BYPASS_REG

set to VDD

WLCSP81

Table 4. Regulator ON/OFF and internal reset ON/OFF availability

Package Regulator ON Regulator OFF Internal reset ON Internal reset OFF

DocID027107 Rev 6 29/202

STM32F446xC/E Functional overview

3.19 Low-power modes

The devices support three low-power modes to achieve the best compromise between low

power consumption, short startup time and available wakeup sources:

•Sleep mode

In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can

wake up the CPU when an interrupt/event occurs.

•Stop mode

The Stop mode achieves the lowest power consumption while retaining the contents of

SRAM and registers. All clocks in the 1.2 V domain are stopped, the PLL, the HSI RC

and the HSE crystal oscillators are disabled.

The voltage regulator can be put either in main regulator mode (MR) or in low-power

mode (LPR). Both modes can be configured as follows (see Table 5: Voltage regulator

modes in stop mode):

– Normal mode (default mode when MR or LPR is enabled)

– Under-drive mode.

The device can be woken up from the Stop mode by any of the EXTI line (the EXTI line

source can be one of the 16 external lines, the PVD output, the RTC alarm / wakeup /

tamper / time stamp events, the USB OTG FS/HS wakeup).

•Standby mode

The Standby mode is used to achieve the lowest power consumption. The internal

voltage regulator is switched off so that the entire 1.2 V domain is powered off. The

PLL, the HSI RC and the HSE crystal oscillators are also switched off. After entering

Standby mode, the SRAM and register contents are lost except for registers in the

backup domain and the backup SRAM when selected.

The device exits the Standby mode when an external reset (NRST pin), an IWDG reset,

a rising edge on the WKUP pin, or an RTC alarm / wakeup / tamper /time stamp event

occurs.

The standby mode is not supported when the embedded voltage regulator is bypassed

and the 1.2 V domain is controlled by an external power.

3.20 VBAT operation

The VBAT pin allows to power the device VBAT domain from an external battery, an external

supercapacitor, or from VDD when no external battery and an external supercapacitor are

present.

VBAT operation is activated when VDD is not present.

The VBAT pin supplies the RTC, the backup registers and the backup SRAM.

Table 5. Voltage regulator modes in stop mode

Voltage regulator

configuration Main regulator (MR) Low-power regulator (LPR)

Normal mode MR ON LPR ON

Under-drive mode MR in under-drive mode LPR in under-drive mode

Functional overview STM32F446xC/E

30/202 DocID027107 Rev 6

Note: When the microcontroller is supplied from VBAT, external interrupts and RTC alarm/events

do not exit it from VBAT operation.

When PDR_ON pin is not connected to VDD (Internal Reset OFF), the VBAT functionality is

no more available and VBAT pin should be connected to VDD.

DocID027107 Rev 6 31/202

STM32F446xC/E Functional overview

3.21 Timers and watchdogs

The devices include two advanced-control timers, eight general-purpose timers, two basic

timers and two watchdog timers.

All timer counters can be frozen in debug mode.

Table 6 compares the features of the advanced-control, general-purpose and basic timers.

Table 6. Timer feature comparison

Timer

type Timer Counter

resolution

Counter

type

Prescaler

factor

DMA

request

generation

Capture/

compare

channels

Complementary

output

Max

interface

clock

(MHz)

Max

timer

clock

(MHz)(1)

Advanced-

control

TIM1,

TIM8 16-bit

Up,

Down,

Up/down

Any integer

between 1

and 65536

Yes 4 Yes 90 180

General

purpose

TIM2,

TIM5 32-bit

Up,

Down,

Up/down

Any integer

between 1

and 65536

Yes 4 No 45 90/180

TIM3,

TIM4 16-bit

Up,

Down,

Up/down

Any integer

between 1

and 65536

Yes 4 No 45 90/180

TIM9 16-bit Up

Any integer

between 1

and 65536

No 2 No 90 180

TIM10,

TIM11 16-bit Up

Any integer

between 1

and 65536

No 1 No 90 180

TIM12 16-bit Up

Any integer

between 1

and 65536

No 2 No 45 90/180

TIM13,

TIM14 16-bit Up

Any integer

between 1

and 65536

No 1 No 45 90/180

Basic TIM6,

TIM7 16-bit Up

Any integer

between 1

and 65536

Yes 0 No 45 90/180

1. The maximum timer clock is either 90 or 180 MHz depending on TIMPRE bit configuration in the RCC_DCKCFGR

Functional overview STM32F446xC/E

32/202 DocID027107 Rev 6

3.21.1 Advanced-control timers (TIM1, TIM8)

The advanced-control timers (TIM1, TIM8) can be seen as three-phase PWM generators

multiplexed on 6 channels. They have complementary PWM outputs with programmable

inserted dead times. They can also be considered as complete general-purpose timers.

Their 4 independent channels can be used for:

•Input capture

•Output compare

•PWM generation (edge- or center-aligned modes)

•One-pulse mode output

If configured as standard 16-bit timers, they have the same features as the general-purpose

TIMx timers. If configured as 16-bit PWM generators, they have full modulation capability (0-

100%).

The advanced-control timer can work together with the TIMx timers via the Timer Link

feature for synchronization or event chaining.

TIM1 and TIM8 support independent DMA request generation.

3.21.2 General-purpose timers (TIMx)

There are ten synchronized general-purpose timers embedded in the STM32F446xC/E

devices (see Table 6 for differences).

•TIM2, TIM3, TIM4, TIM5

The STM32F446xC/E include 4 full-featured general-purpose timers: TIM2, TIM5,

TIM3, and TIM4.The TIM2 and TIM5 timers are based on a 32-bit auto-reload

up/downcounter and a 16-bit prescaler. The TIM3 and TIM4 timers are based on a 16-

bit auto-reload up/downcounter and a 16-bit prescaler. They all feature 4 independent

channels for input capture/output compare, PWM or one-pulse mode output. This gives

up to 16 input capture/output compare/PWMs on the largest packages.

The TIM2, TIM3, TIM4, TIM5 general-purpose timers can work together, or with the

other general-purpose timers and the advanced-control timers TIM1 and TIM8 via the

Timer Link feature for synchronization or event chaining.

Any of these general-purpose timers can be used to generate PWM outputs.

TIM2, TIM3, TIM4, TIM5 all have independent DMA request generation. They are

capable of handling quadrature (incremental) encoder signals and the digital outputs

from 1 to 4 hall-effect sensors.

•TIM9, TIM10, TIM11, TIM12, TIM13, and TIM14

These timers are based on a 16-bit auto-reload upcounter and a 16-bit prescaler.

TIM10, TIM11, TIM13, and TIM14 feature one independent channel, whereas TIM9

and TIM12 have two independent channels for input capture/output compare, PWM or

one-pulse mode output. They can be synchronized with the TIM2, TIM3, TIM4, TIM5

full-featured general-purpose timers. They can also be used as simple time bases.

3.21.3 Basic timers TIM6 and TIM7

These timers are mainly used for DAC trigger and waveform generation. They can also be

used as a generic 16-bit time base.

TIM6 and TIM7 support independent DMA request generation.

DocID027107 Rev 6 33/202

STM32F446xC/E Functional overview

3.21.4 Independent watchdog

The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is

clocked from an independent 32 kHz internal RC and as it operates independently from the

main clock, it can operate in Stop and Standby modes. It can be used either as a watchdog

to reset the device when a problem occurs, or as a free-running timer for application timeout

management. It is hardware- or software-configurable through the option bytes.

3.21.5 Window watchdog

The window watchdog is based on a 7-bit downcounter that can be set as free-running. It

can be used as a watchdog to reset the device when a problem occurs. It is clocked from

the main clock. It has an early warning interrupt capability and the counter can be frozen in

debug mode.

3.21.6 SysTick timer

This timer is dedicated to real-time operating systems, but could also be used as a standard

downcounter. It features:

•A 24-bit downcounter

•Autoreload capability

•Maskable system interrupt generation when the counter reaches 0

•Programmable clock source.

3.22 Inter-integrated circuit interface (I2C)

Four I²C bus interfaces can operate in multimaster and slave modes. Three I²C can support

the standard (up to 100 KHz) and fast (up to 400 KHz) modes.

One I²C can support the standard (up to 100 KHz), fast (up to 400 KHz) and fast mode plus

(up to 1MHz) modes.

They (all I²C) support the 7/10-bit addressing mode and the 7-bit dual addressing mode (as

slave).

A hardware CRC generation/verification is embedded.

They can be served by DMA and they support SMBus 2.0/PMBus.

The devices also include programmable analog and digital noise filters (see Table 7).

Table 7. Comparison of I2C analog and digital filters

-Analog filter Digital filter

Pulse width of

suppressed spikes ≥ 50 ns Programmable length from 1 to 15

I2C peripheral clocks

Functional overview STM32F446xC/E

34/202 DocID027107 Rev 6

3.23 Universal synchronous/asynchronous receiver transmitters

(USART)

The devices embed four universal synchronous/asynchronous receiver transmitters

(USART1, USART2, USART3 and USART6) and four universal asynchronous receiver

transmitters (UART4, and UART5).

These six interfaces provide asynchronous communication, IrDA SIR ENDEC support,

multiprocessor communication mode, single-wire half-duplex communication mode and

have LIN Master/Slave capability. The USART1 and USART6 interfaces are able to

communicate at speeds of up to 11.25 Mbit/s. The other available interfaces communicate

at up to 5.62 bit/s.

USART1, USART2, USART3 and USART6 also provide hardware management of the CTS

and RTS signals, Smart Card mode (ISO 7816 compliant) and SPI-like communication

capability. All interfaces can be served by the DMA controller.

3.24 Serial peripheral interface (SPI)

The devices feature up to four SPIs in slave and master modes in full-duplex and simplex

communication modes. SPI1, and SPI4 can communicate at up to 45 Mbits/s, SPI2 and

SPI3 can communicate at up to 22.5 Mbit/s. The 3-bit prescaler gives 8 master mode

frequencies and the frame is configurable to 8 bits or 16 bits. The hardware CRC

generation/verification supports basic SD Card/MMC modes. All SPIs can be served by the

DMA controller.

Table 8. USART feature comparison(1)

USART

name

Standard

features

Modem

(RTS/CTS) LIN

SPI

maste

irD

Smartcard

(ISO 7816)

Max. baud

rate in Mbit/s

(oversamplin

g by 16)

Max. baud

rate in Mbit/s

(oversamplin

g by 8)

APB

mapping

USART1 X X X X X X 5.62 11.25

APB2

(max.

90 MHz)

USART2 X X X X X X 2.81 5.62

APB1

(max.

45 MHz)

USART3 X X X X X X 2.81 5.62

APB1

(max.

45 MHz)

UART4 X X X - X - 2.81 5.62

APB1

(max.

45 MHz)

UART5 X X X - X - 2.81 5.62

APB1

(max.

45 MHz)

USART6 X X X X X X 5.62 11.25

APB2

(max.

90 MHz)

1. X = feature supported.

DocID027107 Rev 6 35/202

STM32F446xC/E Functional overview

The SPI interface can be configured to operate in TI mode for communications in master

mode and slave mode.

3.25 HDMI (high-definition multimedia interface) consumer

electronics control (CEC)

The devices embeds a HDMI-CEC controller that provides hardware support of consumer

electronics control (CEC) (Appendix supplement 1 to the HDMI standard).

This protocol provides high-level control functions between all audiovisual products in an

environment. It is specified to operate at low speeds with minimum processing and memory

overhead.

3.26 Inter-integrated sound (I2S)

Three standard I2S interfaces (multiplexed with SPI1, SPI2 and SPI3) are available. They

can be operated in master or slave mode, in simplex communication modes, and can be

configured to operate with a 16-/32-bit resolution as an input or output channel. Audio

sampling frequencies from 8 kHz up to 192 kHz are supported. When either or both of the

I2S interfaces is/are configured in master mode, the master clock can be output to the

external DAC/CODEC at 256 times the sampling frequency.

All I2Sx can be served by the DMA controller.

3.27 SPDIF-RX Receiver Interface (SPDIFRX)

The SPDIF-RX peripheral, is designed to receive an S/PDIF flow compliant with IEC-60958

and IEC-61937. These standards support simple stereo streams up to high sample rate,

and compressed multi-channel surround sound, such as those defined by Dolby or DTS (up

to 5.1).

The main features of the SPDIF-RX are the following:

•Up to 4 inputs available

•Automatic symbol rate detection

•Maximum symbol rate: 12.288 MHz

•Stereo stream from 32 to 192 kHz supported

•Supports Audio IEC-60958 and IEC-61937, consumer applications

•Parity bit management

•Communication using DMA for audio samples

•Communication using DMA for control and user channel information

•Interrupt capabilities

The SPDIF-RX receiver provides all the necessary features to detect the symbol rate, and

decode the incoming data stream.

The user can select the wanted SPDIF input, and when a valid signal will be available, the

SPDIF-RX will re-sample the incoming signal, decode the Manchester stream, recognize

frames, sub-frames and blocks elements. It delivers to the CPU decoded data, and

associated status flags.

Functional overview STM32F446xC/E

36/202 DocID027107 Rev 6

The SPDIF-RX also offers a signal named spdifrx_frame_sync, which toggles at the S/PDIF

sub-frame rate that will be used to compute the exact sample rate for clock drift algorithms.

3.28 Serial Audio interface (SAI)

The devices feature two serial audio interfaces (SAI1 and SAI2). Each serial audio

interfaces based on two independent audio sub blocks which can operate as transmitter or

receiver with their FIFO. Many audio protocols are supported by each block: I2S standards,

LSB or MSB-justified, PCM/DSP, TDM, AC’97 and SPDIF output, supporting audio sampling

frequencies from 8 kHz up to 192 kHz. Both sub blocks can be configured in master or in

slave mode. The SAIs use a PLL to achieve audio class accuracy.

In master mode, the master clock can be output to the external DAC/CODEC at 256 times of

the sampling frequency.

The two sub blocks can be configured in synchronous mode when full-duplex mode is

required.

SAI1 and SA2 can be served by the DMA controller.

3.29 Audio PLL (PLLI2S)

The devices feature an additional dedicated PLL for audio I2S and SAI applications. It allows

to achieve error-free I2S sampling clock accuracy without compromising on the CPU

performance, while using USB peripherals.

The PLLI2S configuration can be modified to manage an I2S/SAI sample rate change

without disabling the main PLL (PLL) used for CPU, USB and Ethernet interfaces.

The audio PLL can be programmed with very low error to obtain sampling rates ranging

from 8 KHz to 192 KHz.

In addition to the audio PLL, a master clock input pin can be used to synchronize the

I2S/SAI flow with an external PLL (or Codec output).

3.30 Serial Audio Interface PLL(PLLSAI)

An additional PLL dedicated to audio and USB is used for SAI1 and SAI2 peripheral in case

the PLLI2S is programmed to achieve another audio sampling frequency (49.152 MHz or

11.2896 MHz) and the audio application requires both sampling frequencies simultaneously.

The PLLSAI is also used to generate the 48MHz clock for USB FS and SDIO in case the

system PLL is programmed with factors not multiple of 48MHz.

3.31 Secure digital input/output interface (SDIO)

An SD/SDIO/MMC host interface is available, that supports MultiMediaCard System

Specification Version 4.2 in three different databus modes: 1-bit (default), 4-bit and 8-bit.

The interface allows data transfer at up to 48 MHz, and is compliant with the SD Memory

Card Specification Version 2.0.

DocID027107 Rev 6 37/202

STM32F446xC/E Functional overview

The SDIO Card Specification Version 2.0 is also supported with two different databus

modes: 1-bit (default) and 4-bit.

The current version supports only one SD/SDIO/MMC4.2 card at any one time and a stack

of MMC4.1 or previous.

3.32 Controller area network (bxCAN)

The two CANs are compliant with the 2.0A and B (active) specifications with a bitrate up to 1

Mbit/s. They can receive and transmit standard frames with 11-bit identifiers as well as

extended frames with 29-bit identifiers. Each CAN has three transmit mailboxes, two receive

FIFOS with 3 stages and 28 shared scalable filter banks (all of them can be used even if one

CAN is used). 256 bytes of SRAM are allocated for each CAN.

3.33 Universal serial bus on-the-go full-speed (OTG_FS)

The devices embed an USB OTG full-speed device/host/OTG peripheral with integrated

transceivers. The USB OTG FS peripheral is compliant with the USB 2.0 specification and

with the OTG 1.0 specification. It has software-configurable endpoint setting and supports

suspend/resume. The USB OTG full-speed controller requires a dedicated 48 MHz clock

that is generated by a PLL connected to the HSE oscillator. The USB has dedicated power

rails allowing its use throughout the entire power range. The major features are:

•Combined Rx and Tx FIFO size of 320 × 35 bits with dynamic FIFO sizing

•Supports the session request protocol (SRP) and host negotiation protocol (HNP)

•6 bidirectional endpoints

•12 host channels with periodic OUT support

•HNP/SNP/IP inside (no need for any external resistor)

•For OTG/Host modes, a power switch is needed in case bus-powered devices are

connected

3.34 Universal serial bus on-the-go high-speed (OTG_HS)

The devices embed a USB OTG high-speed (up to 480 Mb/s) device/host/OTG peripheral.

The USB OTG HS supports both full-speed and high-speed operations. It integrates the

transceivers for full-speed operation (12 MB/s) and features a UTMI low-pin interface (ULPI)

for high-speed operation (480 MB/s). When using the USB OTG HS in HS mode, an

external PHY device connected to the ULPI is required.

The USB OTG HS peripheral is compliant with the USB 2.0 specification and with the OTG

1.0 specification. It has software-configurable endpoint setting and supports

suspend/resume. The USB OTG full-speed controller requires a dedicated 48 MHz clock

that is generated by a PLL connected to the HSE oscillator. The USB has dedicated power

rails allowing its use throughout the entire power range.

Functional overview STM32F446xC/E

38/202 DocID027107 Rev 6

The major features are:

•Combined Rx and Tx FIFO size of 1 Kbit × 35 with dynamic FIFO sizing

•Supports the session request protocol (SRP) and host negotiation protocol (HNP)

•8 bidirectional endpoints

•16 host channels with periodic OUT support

•Internal FS OTG PHY support

•External HS or HS OTG operation supporting ULPI in SDR mode. The OTG PHY is

connected to the microcontroller ULPI port through 12 signals. It can be clocked using

the 60 MHz output.

•Internal USB DMA

•HNP/SNP/IP inside (no need for any external resistor)

•for OTG/Host modes, a power switch is needed in case bus-powered devices are

connected

3.35 Digital camera interface (DCMI)

The devices embed a camera interface that can connect with camera modules and CMOS

sensors through an 8-bit to 14-bit parallel interface, to receive video data. The camera

interface can sustain a data transfer rate up to 94.5 Mbyte/s (in 14-bit mode) at 54 MHz.

Its features:

•Programmable polarity for the input pixel clock and synchronization signals

•Parallel data communication can be 8-, 10-, 12- or 14-bit

•Supports 8-bit progressive video monochrome or raw bayer format, YCbCr 4:2:2

progressive video, RGB 565 progressive video or compressed data (like JPEG)

•Supports continuous mode or snapshot (a single frame) mode

•Capability to automatically crop the image black & white.

3.36 General-purpose input/outputs (GPIOs)

Each of the GPIO pins can be configured by software as output (push-pull or open-drain,

with or without pull-up or pull-down), as input (floating, with or without pull-up or pull-down)

or as peripheral alternate function. Most of the GPIO pins are shared with digital or analog

alternate functions. All GPIOs are high-current-capable and have speed selection to better

manage internal noise, power consumption and electromagnetic emission.

The I/O configuration can be locked if needed by following a specific sequence in order to

avoid spurious writing to the I/Os registers.

Fast I/O handling allowing maximum I/O toggling up to 90 MHz.

3.37 Analog-to-digital converters (ADCs)

Three 12-bit analog-to-digital converters are embedded and each ADC shares up to 16

external channels, performing conversions in the single-shot or scan mode. In scan mode,

automatic conversion is performed on a selected group of analog inputs.

DocID027107 Rev 6 39/202

STM32F446xC/E Functional overview

Additional logic functions embedded in the ADC interface allow:

•Simultaneous sample and hold

•Interleaved sample and hold

The ADC can be served by the DMA controller. An analog watchdog feature allows very

precise monitoring of the converted voltage of one, some or all selected channels. An

interrupt is generated when the converted voltage is outside the programmed thresholds.

To synchronize A/D conversion and timers, the ADCs could be triggered by any of TIM1,

TIM2, TIM3, TIM4, TIM5, or TIM8 timer.

3.38 Temperature sensor

The temperature sensor has to generate a voltage that varies linearly with temperature. The

conversion range is between 1.7 V and 3.6 V. The temperature sensor is internally

connected to the same input channel as VBAT

, ADC1_IN18, which is used to convert the

sensor output voltage into a digital value. When the temperature sensor and VBAT

conversion are enabled at the same time, only VBAT conversion is performed.

As the offset of the temperature sensor varies from chip to chip due to process variation, the

internal temperature sensor is mainly suitable for applications that detect temperature

changes instead of absolute temperatures. If an accurate temperature reading is needed,

then an external temperature sensor part should be used.

3.39 Digital-to-analog converter (DAC)

The two 12-bit buffered DAC channels can be used to convert two digital signals into two

analog voltage signal outputs.

This dual digital Interface supports the following features:

•two DAC converters: one for each output channel

•8-bit or 10-bit monotonic output

•left or right data alignment in 12-bit mode

•synchronized update capability

•noise-wave generation

•triangular-wave generation

•dual DAC channel independent or simultaneous conversions

•DMA capability for each channel

•external triggers for conversion

•input voltage reference VREF+

Eight DAC trigger inputs are used in the device. The DAC channels are triggered through

the timer update outputs that are also connected to different DMA streams.

3.40 Serial wire JTAG debug port (SWJ-DP)

The ARM SWJ-DP interface is embedded, and is a combined JTAG and serial wire debug

port that enables either a serial wire debug or a JTAG probe to be connected to the target.

Functional overview STM32F446xC/E

40/202 DocID027107 Rev 6

Debug is performed using 2 pins only instead of 5 required by the JTAG (JTAG pins could

be re-use as GPIO with alternate function): the JTAG TMS and TCK pins are shared with

SWDIO and SWCLK, respectively, and a specific sequence on the TMS pin is used to

switch between JTAG-DP and SW-DP.

3.41 Embedded Trace Macrocell™

The ARM Embedded Trace Macrocell provides a greater visibility of the instruction and data

flow inside the CPU core by streaming compressed data at a very high rate from the

STM32F446xx through a small number of ETM pins to an external hardware trace port

analyser (TPA) device. The TPA is connected to a host computer using USB, Ethernet, or

any other high-speed channel. Real-time instruction and data flow activity can be recorded

and then formatted for display on the host computer that runs the debugger software. TPA

hardware is commercially available from common development tool vendors.

The Embedded Trace Macrocell operates with third party debugger software tools.

DocID027107 Rev 6 41/202

STM32F446xC/E Pinout and pin description

4 Pinout and pin description

Figure 10. STM32F446xC/xE LQFP64 pinout

1. The above figure shows the package top view.

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Pinout and pin description STM32F446xC/E

42/202 DocID027107 Rev 6

Figure 11. STM32F446xC/xE LQFP100 pinout

1. The above figure shows the package top view.

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DocID027107 Rev 6 43/202

STM32F446xC/E Pinout and pin description

Figure 12. STM32F446xC LQFP144 pinout

1. The above figure shows the package top view.

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Pinout and pin description STM32F446xC/E

44/202 DocID027107 Rev 6

Figure 13. STM32F446xC/xE WLCSP81 ballout

1. The above figure shows the package top view.

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DocID027107 Rev 6 45/202

STM32F446xC/E Pinout and pin description

Figure 14. STM32F446xC/xE UFBGA144 ballout

1. The above picture shows the package top view.

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Pinout and pin description STM32F446xC/E

46/202 DocID027107 Rev 6

Table 9. Legend/abbreviations used in the pinout table

Name Abbreviation Definition

Pin name Unless otherwise specified in brackets below the pin name, the pin function during and after

reset is the same as the actual pin name

Pin type

S Supply pin

I Input only pin

I/O Input / output pin

I/O structure

FT 5 V tolerant I/O

FTf 5V tolerant IO, I2C FM+ option

TTa 3.3 V tolerant I/O directly connected to ADC

B Dedicated BOOT0 pin

RST Bidirectional reset pin with weak pull-up resistor

Notes Unless otherwise specified by a note, all I/Os are set as floating inputs during and after reset

Alternate

functions Functions selected through GPIOx_AFR registers

Additional

functions Functions directly selected/enabled through peripheral registers

Table 10. STM32F446xx pin and ball descriptions

Pin Number

Pin name (function

after reset)

Pin type

I/O structure

Notes

Alternate functions Additional

functions

LQFP64

LQFP100

WLCSP 81

UFBGA144

LQFP144

- 1 D7 A3 1 PE2 I/O FT -

TRACECLK, SPI4_SCK,

SAI1_MCLK_A,

QUADSPI_BK1_IO2,

FMC_A23, EVENTOUT

- 2 D6 A2 2 PE3 I/O FT - TRACED0, SAI1_SD_B,

FMC_A19, EVENTOUT -

- 3 A9 B2 3 PE4 I/O FT -

TRACED1, SPI4_NSS,

SAI1_FS_A, FMC_A20,

DCMI_D4, EVENTOUT

- 4 - B3 4 PE5 I/O FT -

TRACED2, TIM9_CH1,

SPI4_MISO, SAI1_SCK_A,

FMC_A21, DCMI_D6,

EVENTOUT

DocID027107 Rev 6 47/202

STM32F446xC/E Pinout and pin description

- 5 - B4 5 PE6 I/O FT -

TRACED3, TIM9_CH2,

SPI4_MOSI, SAI1_SD_A,

FMC_A22, DCMI_D7,

EVENTOUT

1 6 B9 C2 6 VBAT S - - - -

2 7 C8 A1 7 PC13 I/O FT - EVENTOUT TAMP_1/WKUP1

38C9B18 PC14-

OSC32_IN(PC14) I/O FT - EVENTOUT OSC32_IN

4 9 D9 C1 9 PC15-

OSC32_OUT(PC15) I/O FT - EVENTOUT OSC32_OUT

-- -C310 PF0 I/OFT- I2C2_SDA, FMC_A0,

EVENTOUT -

-- -C411 PF1 I/OFT- I2C2_SCL, FMC_A1,

EVENTOUT -

-- -D412 PF2 I/OFT-I2C2_SMBA, FMC_A2,

EVENTOUT -

- - - E2 13 PF3 I/O FT - FMC_A3, EVENTOUT ADC3_IN9

- - - E3 14 PF4 I/O FT - FMC_A4, EVENTOUT ADC3_IN14

- - - E4 15 PF5 I/O FT - FMC_A5, EVENTOUT ADC3_IN15

- 10 - D2 16 VSS S - - - -

-11 - D317 VDD S-- - -

-- -F318 PF6 I/OFT-

TIM10_CH1, SAI1_SD_B,

QUADSPI_BK1_IO3,

EVENTOUT

ADC3_IN4

-- -F219 PF7 I/OFT-

TIM11_CH1,

SAI1_MCLK_B,

QUADSPI_BK1_IO2,

EVENTOUT

ADC3_IN5

-- -G320 PF8 I/OFT-

SAI1_SCK_B, TIM13_CH1,

QUADSPI_BK1_IO0,

EVENTOUT

ADC3_IN6

-- -G221 PF9 I/OFT-

SAI1_FS_B, TIM14_CH1,

QUADSPI_BK1_IO1,

EVENTOUT

ADC3_IN7

- - - G1 22 PF10 I/O FT - DCMI_D11, EVENTOUT ADC3_IN8

5 12 E9 D1 23 PH0-OSC_IN(PH0) I/O FT - EVENTOUT OSC_IN

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin Number

Pin name (function

after reset)

Pin type

I/O structure

Notes

Alternate functions Additional

functions

LQFP64

LQFP100

WLCSP 81

UFBGA144

LQFP144

Pinout and pin description STM32F446xC/E

48/202 DocID027107 Rev 6

613F9E124 PH1-

OSC_OUT(PH1) I/O FT - EVENTOUT OSC_OUT

7 14 D8 F1 25 NRST I/O RS

T-- -

815G9H126 PC0 I/OFT-

SAI1_MCLK_B,

OTG_HS_ULPI_STP,

FMC_SDNWE,

EVENTOUT

ADC123_IN10

916 - H227 PC1 I/OFT-

SPI3_MOSI/I2S3_SD,

SAI1_SD_A,

SPI2_MOSI/I2S2_SD,

EVENTOUT

ADC123_IN11

10 17 E8 H3 28 PC2 I/O FT -

SPI2_MISO,

OTG_HS_ULPI_DIR,

FMC_SDNE0, EVENTOUT

ADC123_IN12

11 18 F8 H4 29 PC3 I/O FT -

SPI2_MOSI/I2S2_SD,

OTG_HS_ULPI_NXT,

FMC_SDCKE0,

EVENTOUT

ADC123_IN13

-19H9 - 30 VDD S-- - -

- - G8 - - VSS S - - - -

12 20 F7 J1 31 VSSA S - - - -

- - - K1 - VREF- S - - - -

- 21 - L1 32 VREF+ S - - - -

13 22 H8 M1 33 VDDA S - - - -

14 23 J9 J2 34 PA0-WKUP(PA0) I/O FT -

TIM2_CH1/TIM2_ETR,

TIM5_CH1, TIM8_ETR,

USART2_CTS,

UART4_TX, EVENTOUT

ADC123_IN0,

WKUP0/TAMP_2

15 24 G7 K2 35 PA1 I/O FT -

TIM2_CH2, TIM5_CH2,

USART2_RTS,

UART4_RX,

QUADSPI_BK1_IO3,

SAI2_MCLK_B,

EVENTOUT

ADC123_IN1

16 25 E7 L2 36 PA2 I/O FT -

TIM2_CH3, TIM5_CH3,

TIM9_CH1, USART2_TX,

SAI2_SCK_B, EVENTOUT

ADC123_IN2

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin Number

Pin name (function

after reset)

Pin type

I/O structure

Notes

Alternate functions Additional

functions

LQFP64

LQFP100

WLCSP 81

UFBGA144

LQFP144

DocID027107 Rev 6 49/202

STM32F446xC/E Pinout and pin description

17 26 E6 M2 37 PA3 I/O FT -

TIM2_CH4, TIM5_CH4,

TIM9_CH2, SAI1_FS_A,

USART2_RX,

OTG_HS_ULPI_D0,

EVENTOUT

ADC123_IN3

18 27 - G4 38 VSS S - - - -

- - J8 H5 - BYPASS_REG I FT - - -

19 28 - F4 39 VDD S - - - -

20 29 H7 J3 40 PA4 I/O TC -

SPI1_NSS/I2S1_WS,

SPI3_NSS/I2S3_WS,

USART2_CK,

OTG_HS_SOF,

DCMI_HSYNC,

EVENTOUT

ADC12_IN4,

DAC_OUT1

21 30 F6 K3 41 PA5 I/O TC -

TIM2_CH1/TIM2_ETR,

TIM8_CH1N,

SPI1_SCK/I2S1_CK,

OTG_HS_ULPI_CK,

EVENTOUT

ADC12_IN5,

DAC_OUT2

22 31 G6 L3 42 PA6 I/O FT -

TIM1_BKIN, TIM3_CH1,

TIM8_BKIN, SPI1_MISO,

I2S2_MCK, TIM13_CH1,

DCMI_PIXCLK,

EVENTOUT

ADC12_IN6

23 32 E5 M3 43 PA7 I/O FT -

TIM1_CH1N, TIM3_CH2,

TIM8_CH1N,

SPI1_MOSI/I2S1_SD,

TIM14_CH1,

FMC_SDNWE,

EVENTOUT

ADC12_IN7

24 33 J7 J4 44 PC4 I/O FT - I2S1_MCK, SPDIFRX_IN2,

FMC_SDNE0, EVENTOUT ADC12_IN14

25 34 - K4 45 PC5 I/O FT -

USART3_RX,

SPDIFRX_IN3,

FMC_SDCKE0,

EVENTOUT

ADC12_IN15

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin Number

Pin name (function

after reset)

Pin type

I/O structure

Notes

Alternate functions Additional

functions

LQFP64

LQFP100

WLCSP 81

UFBGA144

LQFP144

Pinout and pin description STM32F446xC/E

50/202 DocID027107 Rev 6

26 35 F5 L4 46 PB0 I/O FT -

TIM1_CH2N, TIM3_CH3,

TIM8_CH2N,

SPI3_MOSI/I2S3_SD,

UART4_CTS,

OTG_HS_ULPI_D1,

SDIO_D1, EVENTOUT

ADC12_IN8

27 36 H6 M4 47 PB1 I/O FT -

TIM1_CH3N, TIM3_CH4,

TIM8_CH3N,

OTG_HS_ULPI_D2,

SDIO_D2, EVENTOUT

ADC12_IN9

28 37 J6 J5 48 PB2-BOOT1

(PB2) I/O FT -

TIM2_CH4, SAI1_SD_A,

SPI3_MOSI/I2S3_SD,

QUADSPI_CLK,

OTG_HS_ULPI_D4,

SDIO_CK, EVENTOUT

- - - M5 49 PF11 I/O FT -

SAI2_SD_B,

FMC_SDNRAS,

DCMI_D12, EVENTOUT

- - - L5 50 PF12 I/O FT - FMC_A6, EVENTOUT -

- - - - 51 VSS S - - - -

-- -G552 VDD S-- - -

-- -K553 PF13 I/OFT- FMPI2C1_SMBA,

FMC_A7, EVENTOUT -

-- -M654 PF14 I/OFTf-

FMPI2C1_SCL, FMC_A8,

EVENTOUT -

-- -L655 PF15 I/OFTf-

FMPI2C1_SDA, FMC_A9,

EVENTOUT -

- - - K6 56 PG0 I/O FT - FMC_A10, EVENTOUT -

- - - J6 57 PG1 I/O FT - FMC_A11, EVENTOUT -

- 38 J5 M7 58 PE7 I/O FT -

TIM1_ETR, UART5_RX,

QUADSPI_BK2_IO0,

FMC_D4, EVENTOUT

- 39 H5 L7 59 PE8 I/O FT -

TIM1_CH1N, UART5_TX,

QUADSPI_BK2_IO1,

FMC_D5, EVENTOUT

- 40 G5 K7 60 PE9 I/O FT -

TIM1_CH1,

QUADSPI_BK2_IO2,

FMC_D6, EVENTOUT

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin Number

Pin name (function

after reset)

Pin type

I/O structure

Notes

Alternate functions Additional

functions

LQFP64

LQFP100

WLCSP 81

UFBGA144

LQFP144

DocID027107 Rev 6 51/202

STM32F446xC/E Pinout and pin description

- - - H6 61 VSS S - - - -

-- -G662 VDD S-- - -

- 41 J4 J7 63 PE10 I/O FT -

TIM1_CH2N,

QUADSPI_BK2_IO3,

FMC_D7, EVENTOUT

- 42 - H8 64 PE11 I/O FT -

TIM1_CH2, SPI4_NSS,

SAI2_SD_B, FMC_D8,

EVENTOUT

- 43 - J8 65 PE12 I/O FT -

TIM1_CH3N, SPI4_SCK,

SAI2_SCK_B, FMC_D9,

EVENTOUT

- 44 - K8 66 PE13 I/O FT -

TIM1_CH3, SPI4_MISO,

SAI2_FS_B, FMC_D10,

EVENTOUT

- 45 - L8 67 PE14 I/O FT -

TIM1_CH4, SPI4_MOSI,

SAI2_MCLK_B, FMC_D11,

EVENTOUT

- 46 - M8 68 PE15 I/O FT - TIM1_BKIN, FMC_D12,

EVENTOUT -

29 47 H4 M9 69 PB10 I/O FT -

TIM2_CH3, I2C2_SCL,

SPI2_SCK/I2S2_CK,

SAI1_SCK_A,

USART3_TX,

OTG_HS_ULPI_D3,

EVENTOUT

- - - M10 70 PB11 I/O FT -

TIM2_CH4, I2C2_SDA,

USART3_RX, SAI2_SD_A,

EVENTOUT

30 48 J3 H7 71 VCAP_1 S - - - -

31 49 H3 - - VSS S - - - -

32 50 J2 G7 72 VDD S - - - -

33 51 G4 M11 73 PB12 I/O FT -

TIM1_BKIN, I2C2_SMBA,

SPI2_NSS/I2S2_WS,

SAI1_SCK_B,

USART3_CK, CAN2_RX,

OTG_HS_ULPI_D5,

OTG_HS_ID, EVENTOUT

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin Number

Pin name (function

after reset)

Pin type

I/O structure

Notes

Alternate functions Additional

functions

LQFP64

LQFP100

WLCSP 81

UFBGA144

LQFP144

Pinout and pin description STM32F446xC/E

52/202 DocID027107 Rev 6

34 52 H2 M12 74 PB13 I/O FT -

TIM1_CH1N,

SPI2_SCK/I2S2_CK,

USART3_CTS, CAN2_TX,

OTG_HS_ULPI_D6,

EVENTOUT

OTG_HS_VBUS

35 53 J1 L11 75 PB14(1) I/O FT -

TIM1_CH2N, TIM8_CH2N,

SPI2_MISO,

USART3_RTS,

TIM12_CH1,

OTG_HS_DM, EVENTOUT

36 54 G3 L12 76 PB15(1) I/O FT -

RTC_REFIN, TIM1_CH3N,

TIM8_CH3N,

SPI2_MOSI/I2S2_SD,

TIM12_CH2, OTG_HS_DP,

EVENTOUT

- 55 - L9 77 PD8 I/O FT -

USART3_TX,

SPDIFRX_IN1, FMC_D13,

EVENTOUT

- 56 - K9 78 PD9 I/O FT - USART3_RX, FMC_D14,

EVENTOUT -

- 57 - J9 79 PD10 I/O FT - USART3_CK, FMC_D15,

EVENTOUT -

-58H1H980 PD11 I/OFT-

FMPI2C1_SMBA,

USART3_CTS,

QUADSPI_BK1_IO0,

SAI2_SD_A, FMC_A16,

EVENTOUT

- 59 G2 L10 81 PD12 I/O FTf -

TIM4_CH1,

FMPI2C1_SCL,

USART3_RTS,

QUADSPI_BK1_IO1,

SAI2_FS_A, FMC_A17,

EVENTOUT

- 60 G1 K10 82 PD13 I/O FTf -

TIM4_CH2,

FMPI2C1_SDA,

QUADSPI_BK1_IO3,

SAI2_SCK_A, FMC_A18,

EVENTOUT

- - - G8 83 VSS S - - - -

-- -F884 VDD S-- - -

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin Number

Pin name (function

after reset)

Pin type

I/O structure

Notes

Alternate functions Additional

functions

LQFP64

LQFP100

WLCSP 81

UFBGA144

LQFP144

DocID027107 Rev 6 53/202

STM32F446xC/E Pinout and pin description

-61 -K1185 PD14 I/OFTf-

TIM4_CH3,

FMPI2C1_SCL,

SAI2_SCK_A, FMC_D0,

EVENTOUT

-62 -K1286 PD15 I/OFTf-

TIM4_CH4,

FMPI2C1_SDA, FMC_D1,

EVENTOUT

- - - J12 87 PG2 I/O FT - FMC_A12, EVENTOUT -

- - - J11 88 PG3 I/O FT - FMC_A13, EVENTOUT -

-- -J1089 PG4 I/OFT- FMC_A14/FMC_BA0,

EVENTOUT -

- - - H12 90 PG5 I/O FT - FMC_A15/FMC_BA1,

EVENTOUT -

-- -H1191 PG6 I/OFT- QUADSPI_BK1_NCS,

DCMI_D12, EVENTOUT -

- - - H10 92 PG7 I/O FT - USART6_CK, FMC_INT,

DCMI_D13, EVENTOUT -

-- -G1193 PG8 I/OFT-

SPDIFRX_IN2,

USART6_RTS,

FMC_SDCLK, EVENTOUT

- - - - 94 VSS S - - - -

-- -F10- VDD S-- - -

- - E1 C11 95 VDDUSB S - - - -

37 63 F1 G12 96 PC6 I/O FTf -

TIM3_CH1, TIM8_CH1,

FMPI2C1_SCL,

I2S2_MCK, USART6_TX,

SDIO_D6, DCMI_D0,

EVENTOUT

38 64 F2 F12 97 PC7 I/O FTf -

TIM3_CH2, TIM8_CH2,

FMPI2C1_SDA,

SPI2_SCK/I2S2_CK,

I2S3_MCK, SPDIFRX_IN1,

USART6_RX, SDIO_D7,

DCMI_D1, EVENTOUT

39 65 F3 F11 98 PC8 I/O FT -

TRACED0, TIM3_CH3,

TIM8_CH3, UART5_RTS,

USART6_CK, SDIO_D0,

DCMI_D2, EVENTOUT

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin Number

Pin name (function

after reset)

Pin type

I/O structure

Notes

Alternate functions Additional

functions

LQFP64

LQFP100

WLCSP 81

UFBGA144

LQFP144

Pinout and pin description STM32F446xC/E

54/202 DocID027107 Rev 6

40 66 D1 E11 99 PC9 I/O FT -

MCO2, TIM3_CH4,

TIM8_CH4, I2C3_SDA,

I2S_CKIN, UART5_CTS,

QUADSPI_BK1_IO0,

SDIO_D1, DCMI_D3,

EVENTOUT

41 67 E2 E12 100 PA8 I/O FT -

MCO1, TIM1_CH1,

I2C3_SCL, USART1_CK,

OTG_FS_SOF,

EVENTOUT

42 68 F4 D12 101 PA9 I/O FT -

TIM1_CH2, I2C3_SMBA,

SPI2_SCK/I2S2_CK,

SAI1_SD_B, USART1_TX,

DCMI_D0, EVENTOUT

OTG_FS_VBUS

43 69 E3 D11 102 PA10 I/O FT -

TIM1_CH3, USART1_RX,

OTG_FS_ID, DCMI_D1,

EVENTOUT

44 70 C1 C12 103 PA11(1) I/O FT -

TIM1_CH4, USART1_CTS,

CAN1_RX, OTG_FS_DM,

EVENTOUT

45 71 E4 B12 104 PA12(1) I/O FT -

TIM1_ETR, USART1_RTS,

SAI2_FS_B, CAN1_TX,

OTG_FS_DP, EVENTOUT

46 72 D2 A12 105 PA13(JTMS-SWDIO) I/O FT - JTMS-SWDIO,

EVENTOUT -

- 73 C2 G9 106 VCAP_2 S - - - -

47 74 B1 G10 107 VSS S - - - -

48 75 A1 F9 108 VDD S - - - -

49 76 C3 A11 109 PA14(JTCK-SWCLK) I/O FT - JTCK-SWCLK,

EVENTOUT -

50 77 B2 A10 110 PA15(JTDI) I/O FT -

JTDI,

TIM2_CH1/TIM2_ETR,

HDMI_CEC,

SPI1_NSS/I2S1_WS,

SPI3_NSS/I2S3_WS,

UART4_RTS, EVENTOUT

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin Number

Pin name (function

after reset)

Pin type

I/O structure

Notes

Alternate functions Additional

functions

LQFP64

LQFP100

WLCSP 81

UFBGA144

LQFP144

DocID027107 Rev 6 55/202

STM32F446xC/E Pinout and pin description

51 78 D3 B11 111 PC10 I/O FT -

SPI3_SCK/I2S3_CK,

USART3_TX, UART4_TX,

QUADSPI_BK1_IO1,

SDIO_D2, DCMI_D8,

EVENTOUT

52 79 D4 B10 112 PC11 I/O FT -

SPI3_MISO, USART3_RX,

UART4_RX,

QUADSPI_BK2_NCS,

SDIO_D3, DCMI_D4,

EVENTOUT

53 80 A2 C10 113 PC12 I/O FT -

I2C2_SDA,

SPI3_MOSI/I2S3_SD,

USART3_CK, UART5_TX,

SDIO_CK, DCMI_D9,

EVENTOUT

-81B3E10114 PD0 I/OFT-

SPI4_MISO,

SPI3_MOSI/I2S3_SD,

CAN1_RX, FMC_D2,

EVENTOUT

-82C4D10115 PD1 I/OFT-

SPI2_NSS/I2S2_WS,

CAN1_TX, FMC_D3,

EVENTOUT

54 83 D5 E9 116 PD2 I/O FT -

TIM3_ETR, UART5_RX,

SDIO_CMD, DCMI_D11,

EVENTOUT

-84 - D9117 PD3 I/OFT-

TRACED1,

SPI2_SCK/I2S2_CK,

USART2_CTS,

QUADSPI_CLK,

FMC_CLK, DCMI_D5,

EVENTOUT

-85A3C9118 PD4 I/OFT-

USART2_RTS, FMC_NOE,

EVENTOUT -

-86 - B9119 PD5 I/OFT-

USART2_TX, FMC_NWE,

EVENTOUT -

- - - E7 120 VSS S - - - -

-- -F7121 VDD S-- - -

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin Number

Pin name (function

after reset)

Pin type

I/O structure

Notes

Alternate functions Additional

functions

LQFP64

LQFP100

WLCSP 81

UFBGA144

LQFP144

Pinout and pin description STM32F446xC/E

56/202 DocID027107 Rev 6

-87B4A8122 PD6 I/OFT-

SPI3_MOSI/I2S3_SD,

SAI1_SD_A, USART2_RX,

FMC_NWAIT, DCMI_D10,

EVENTOUT

-88A4A9123 PD7 I/OFT-

USART2_CK,

SPDIFRX_IN0, FMC_NE1,

EVENTOUT

-- -E8124 PG9 I/OFT-

SPDIFRX_IN3,

USART6_RX,

QUADSPI_BK2_IO2,

SAI2_FS_B,

FMC_NE2/FMC_NCE3,

DCMI_VSYNC,

EVENTOUT

- - - D8 125 PG10 I/O FT - SAI2_SD_B, FMC_NE3,

DCMI_D2, EVENTOUT -

-- -C8126 PG11 I/OFT-

SPI4_SCK, SPDIFRX_IN0,

DCMI_D3, EVENTOUT -

- - - B8 127 PG12 I/O FT -

SPI4_MISO,

SPDIFRX_IN1,

USART6_RTS, FMC_NE4,

EVENTOUT

- - - D7 128 PG13 I/O FT -

TRACED2, SPI4_MOSI,

USART6_CTS, FMC_A24,

EVENTOUT

- - - C7 129 PG14 I/O FT -

TRACED3, SPI4_NSS,

USART6_TX,

QUADSPI_BK2_IO3,

FMC_A25, EVENTOUT

- - - - 130 VSS S - - - -

-- -F6131 VDD S-- - -

- - - B7 132 PG15 I/O FT -

USART6_CTS,

FMC_SDNCAS,

DCMI_D13, EVENTOUT

55 89 A5 A7 133 PB3(JTDO/TRACES

WO) I/O FT -

JTDO/TRACESWO,

TIM2_CH2, I2C2_SDA,

SPI1_SCK/I2S1_CK,

SPI3_SCK/I2S3_CK,

EVENTOUT

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin Number

Pin name (function

after reset)

Pin type

I/O structure

Notes

Alternate functions Additional

functions

LQFP64

LQFP100

WLCSP 81

UFBGA144

LQFP144

DocID027107 Rev 6 57/202

STM32F446xC/E Pinout and pin description

56 90 B5 A6 134 PB4(NJTRST) I/O FT -

NJTRST, TIM3_CH1,

I2C3_SDA, SPI1_MISO,

SPI3_MISO,

SPI2_NSS/I2S2_WS,

EVENTOUT

57 91 A6 B6 135 PB5 I/O FT -

TIM3_CH2, I2C1_SMBA,

SPI1_MOSI/I2S1_SD,

SPI3_MOSI/I2S3_SD,

CAN2_RX,

OTG_HS_ULPI_D7,

FMC_SDCKE1,

DCMI_D10, EVENTOUT

58 92 C5 C6 136 PB6 I/O FT -

TIM4_CH1, HDMI_CEC,

I2C1_SCL, USART1_TX,

CAN2_TX,

QUADSPI_BK1_NCS,

FMC_SDNE1, DCMI_D5,

EVENTOUT

59 93 B6 D6 137 PB7 I/O FT -

TIM4_CH2, I2C1_SDA,

USART1_RX,

SPDIFRX_IN0, FMC_NL,

DCMI_VSYNC,

EVENTOUT

60 94 A7 D5 138 BOOT0 I B - - VPP

61 95 C6 C5 139 PB8 I/O FT -

TIM2_CH1/TIM2_ETR,

TIM4_CH3, TIM10_CH1,

I2C1_SCL, CAN1_RX,

SDIO_D4, DCMI_D6,

EVENTOUT

62 96 C7 B5 140 PB9 I/O FT -

TIM2_CH2, TIM4_CH4,

TIM11_CH1, I2C1_SDA,

SPI2_NSS/I2S2_WS,

SAI1_FS_B, CAN1_TX,

SDIO_D5, DCMI_D7,

EVENTOUT

- 97 - A5 141 PE0 I/O FT -

TIM4_ETR,

SAI2_MCLK_A,

FMC_NBL0, DCMI_D2,

EVENTOUT

- 98 - A4 142 PE1 I/O FT - FMC_NBL1, DCMI_D3,

EVENTOUT -

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin Number

Pin name (function

after reset)

Pin type

I/O structure

Notes

Alternate functions Additional

functions

LQFP64

LQFP100

WLCSP 81

UFBGA144

LQFP144

Pinout and pin description STM32F446xC/E

58/202 DocID027107 Rev 6

63 99 B7 E6 - VSS S - - - -

- - B8 E5 143 PDR_ON S - - - -

64 100 A8 F5 144 VDD S - - - -

1. PA11, PA12, PB14 and PB15 I/Os are supplied by VDDUSB

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin Number

Pin name (function

after reset)

Pin type

I/O structure

Notes

Alternate functions Additional

functions

LQFP64

LQFP100

WLCSP 81

UFBGA144

LQFP144

STM32F446xC/E Pinout and pin description

DocID027107 Rev 6 59/202

Table 11. Alternate function

Port

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

SYS TIM1/2 TIM3/4/5

TIM8/9/

10/11/

CEC

I2C1/2/3

/4/CEC

SPI1/2/3/

SPI2/3/4/

SAI1

SPI2/3/

USART1/

2/3/UART

5/SPDIFR

SAI/

USART6/

UART4/5/

SPDIFRX

CAN1/2

TIM12/13/

14/

QUADSPI

SAI2/

QUADSPI/

OTG2_HS/

OTG1_FS

FMC/

SDIO/

OTG2_FS

DCMI -SYS

Port A

PA0 - TIM2_CH1/

TIM2_ETR TIM5_CH1 TIM8_ETR - - - USART2_

CTS

UART4_

TX -- ----

EVENT

OUT

PA1 - TIM2_CH2 TIM5_CH2 - - - - USART2_

RTS

UART4_

QUADSPI_

BK1_IO3

SAI2_

MCLK_B ----

EVENT

OUT

PA2 - TIM2_CH3 TIM5_CH3 TIM9_CH1 - - - USART2_

SAI2_

SCK_B -- - ---

EVENT

OUT

PA3 - TIM2_CH4 TIM5_CH4 TIM9_CH2 - - SAI1_

FS_A

USART2_

RX --

OTG_HS_

ULPI_D0 ----

EVENT

OUT

PA4 - - - - - SPI1_NSS/I

2S1_WS

SPI3_NSS

I2S3_WS

USART2_

CK -- - -

OTG_HS_

SOF

DCMI_

HSYNC -EVENT

OUT

PA5 - TIM2_CH1/

TIM2_ETR -TIM8_

CH1N -SPI1_SCK/I

2S1_CK -- - -

OTG_HS_

ULPI_CK ----

EVENT

OUT

PA6 - TIM1_

BKIN TIM3_CH1 TIM8_

BKIN -SPI1_MISO

I2S2_

MCK - - TIM13_CH1 - - - DCMI_

PIXCLK -EVENT

OUT

PA7 - TIM1_

CH1N TIM3_CH2 TIM8_

CH1N -

SPI1_MOSI

I2S1_SD

- - - TIM14_CH1 - - FMC_

SDNWE --

EVENT

OUT

PA8 MCO1 TIM1_CH1 - - I2C3_

SCL --

USART1_

CK --

OTG_FS_

SOF ----

EVENT

OUT

PA9 - TIM1_CH2 - - I2C3_

SMBA

SPI2_SCK

/I2S2_CK

SAI1_

SD_B

USART1_

TX - - - - - DCMI_D0 - EVENT

OUT

PA10 - TIM1_CH3 - - - - - USART1_

RX --

OTG_FS_

ID - - DCMI_D1 - EVENT

OUT

PA11 - TIM1_CH4 - - - - - USART1_

CTS -CAN1_RX

OTG_FS_

DM ----

EVENT

OUT

PA12 - TIM1_ETR - - - - - USART1_

RTS

SAI2_

FS_B CAN1_TX OTG_FS_

DP ----

EVENT

OUT

PA13 JTMS-

SWDIO --------- - - ---

EVENT

OUT

PA14 JTCK-

SWCLK --------- - - ---

EVENT

OUT

PA15 JTDI TIM2_CH1/

TIM2_ETR --

HDMI_

CEC

SPI1_NSS/

I2S1_WS

SPI3_

NSS/

I2S3_WS

-UART4_RT

S-- ----

EVENT

OUT

Pinout and pin description STM32F446xC/E

60/202 DocID027107 Rev 6

Port B

PB0 - TIM1_CH2N TIM3_CH3 TIM8_

CH2N -- -

SPI3_MOS

I2S3_SD

UART4_

CTS -OTG_HS_

ULPI_D1 -SDIO_D1- -

EVENT

OUT

PB1 - TIM1_CH3N TIM3_CH4 TIM8_

CH3N -- - - - -

OTG_HS_

ULPI_D2 -SDIO_D2- -

EVENT

OUT

PB2 - TIM2_CH4 - - - - SAI1_

SD_A

SPI3_MOS

I2S3_SD

-QUADSPI_

CLK

OTG_HS_

ULPI_D4 - SDIO_CK - - EVENT

OUT

PB3

JTDO/

TRACES

TIM2_CH2 - - I2C2_

SDA

SPI1_SCK

/I2S1_CK

SPI3_SCK

I2S3_CK

--- - - ---

EVENT

OUT

PB4 NJTRST - TIM3_CH1 - I2C3_

SDA SPI1_MISO SPI3_

MISO

SPI2_NSS/

I2S2_WS -- - - ---

EVENT

OUT

PB5 - - TIM3_CH2 - I2C1_

SMBA

SPI1_MOSI

/I2S1_SD

SPI3_

MOSI/

I2S3_SD

- - CAN2_RX OTG_HS_

ULPI_D7 -FMC_

SDCKE1

DCMI_

D10 -EVENT

OUT

PB6 - - TIM4_CH1 HDMI_

CEC

I2C1_

SCL --

USART1_

TX -CAN2_TX

QUADSPI_

BK1_NCS -FMC_

SDNE1 DCMI_D5 - EVENT

OUT

PB7 - - TIM4_CH2 - I2C1_

SDA --

USART1_

SPDIF_

RX0 -- -FMC_NL

DCMI_

VSYNC -EVENT

OUT

PB8 - TIM2_CH1/

TIM2_ETR TIM4_CH3 TIM10_

CH1

I2C1_

SCL - - - - CAN1_RX - - SDIO_D4 DCMI_D6 - EVENT

OUT

PB9 - TIM2_

CH2 TIM4_CH4 TIM11_

CH1

I2C1_

SDA

SPI2_NSS/

I2S2_WS

SAI1_

FS_B - - CAN1_TX - - SDIO_D5 DCMI_D7 - EVENT

OUT

PB10 - TIM2_CH3 - - I2C2_

SCL

SPI2_SCK/

I2S2_CK

SAI1_

SCK_A

USART3_

TX --

OTG_HS_

ULPI_D3 ----

EVENT

OUT

PB11 - TIM2_CH4 - - I2C2_

SDA --

USART3_

SAI2_

SD_A -- ----

EVENT

OUT

PB12 - TIM1_BKIN - - I2C2_

SMBA

SPI2_NSS/

I2S2_WS

SAI1_

SCK_B

USART3_

CK -CAN2_RX

OTG_HS_

ULPI_D5 -OTG_

HS_ID --

EVENT

OUT

PB13 - TIM1_CH1N - - - SPI2_SCK/

I2S2_CK -USART3_

CTS -CAN2_TX

OTG_HS_

ULPI_D6 ----

EVENT

OUT

PB14 - TIM1_CH2N - TIM8_

CH2N -SPI2_MISO - USART3_

RTS - TIM12_CH1 - - OTG_

HS_DM --

EVENT

OUT

PB15 RTC_

REFIN TIM1_CH3N - TIM8_

CH3N -SPI2_MOSI

/I2S2_SD - - - TIM12_CH2 - - OTG_

HS_DP --

EVENT

OUT

Table 11. Alternate function (continued)

Port

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

SYS TIM1/2 TIM3/4/5

TIM8/9/

10/11/

CEC

I2C1/2/3

/4/CEC

SPI1/2/3/

SPI2/3/4/

SAI1

SPI2/3/

USART1/

2/3/UART

5/SPDIFR

SAI/

USART6/

UART4/5/

SPDIFRX

CAN1/2

TIM12/13/

14/

QUADSPI

SAI2/

QUADSPI/

OTG2_HS/

OTG1_FS

FMC/

SDIO/

OTG2_FS

DCMI -SYS

STM32F446xC/E Pinout and pin description

DocID027107 Rev 6 61/202

Port C

PC0 - - - - - - SAI1_

MCLK_B ---

OTG_HS_

ULPI_STP -FMC_

SDNWE --

EVENT

OUT

PC1 - - - - - SPI3_MOSI

/I2S3_SD

SAI1_

SD_A

SPI2_MOS

/I2S2_SD

-- - - ---

EVENT

OUT

PC2 - - - - - SPI2_MISO - - - - OTG_HS_

ULPI_DIR -FMC_

SDNE0 --

EVENT

OUT

PC3 - - - - -

SPI2_MOSI

I2S2_SD

-- - -

OTG_HS_

ULPI_NXT -FMC_

SDCKE0 --

EVENT

OUT

PC4 - - - - - I2S1_MCK - - SPDIF_

RX2 -- -

FMC_

SDNE0 --

EVENT

OUT

PC5 - - - - - - - USART3_

SPDIF_

RX3 -- -

FMC_

SDCKE0 --

EVENT

OUT

PC6 - - TIM3_CH1 TIM8_CH1 FMPI2C1

_SCL I2S2_MCK - - USART6_T

X- - - SDIO_D6 DCMI_D0 - EVENT

OUT

PC7 - - TIM3_CH2 TIM8_CH2 FMPI2C1

_SDA

SPI2_SCK/

I2S2_CK I2S3_MCK SPDIF_

RX1

USART6_R

X- - - SDIO_D7 DCMI_D1 - EVENT

OUT

PC8 TRACE

D0 - TIM3_CH3 TIM8_CH3 - - - UART5_

RTS

USART6_C

K- - - SDIO_D0 DCMI_D2 - EVENT

OUT

PC9 MCO2 - TIM3_CH4 TIM8_CH4 I2C3_

SDA I2S_CKIN - UART5_

CTS -QUADSPI_

BK1_IO0 - - SDIO_D1 DCMI_D3 - EVENT

OUT

PC10-- - ---

SPI3_SCK

I2S3_CK

USART3_

TX UART4_TX QUADSPI_

BK1_IO1 - - SDIO_D2 DCMI_D8 - EVENT

OUT

PC11-- - ---

SPI3_

MISO

USART3_

RX UART4_RX QUADSPI_

BK2_NCS - - SDIO_D3 DCMI_D4 - EVENT

OUT

PC12 - - - - I2C2_

SDA -

SPI3_

MOSI/

I2S3_SD

USART3_

CK UART5_TX - - - SDIO_CK DCMI_D9 - EVENT

OUT

PC13-- - --- - - - - - - ---

EVENT

OUT

PC14-- - --- - - - - - - ---

EVENT

OUT

PC15-- - --- - - - - - - ---

EVENT

OUT

Table 11. Alternate function (continued)

Port

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

SYS TIM1/2 TIM3/4/5

TIM8/9/

10/11/

CEC

I2C1/2/3

/4/CEC

SPI1/2/3/

SPI2/3/4/

SAI1

SPI2/3/

USART1/

2/3/UART

5/SPDIFR

SAI/

USART6/

UART4/5/

SPDIFRX

CAN1/2

TIM12/13/

14/

QUADSPI

SAI2/

QUADSPI/

OTG2_HS/

OTG1_FS

FMC/

SDIO/

OTG2_FS

DCMI -SYS

Pinout and pin description STM32F446xC/E

62/202 DocID027107 Rev 6

Port D

PD0 - - - - - SPI4_MISO

SPI3_

MOSI/

I2S3_SD

- - CAN1_RX - - FMC_D2 - - EVENT

OUT

PD1 - - - - - - - SPI2_NSS/

I2S2_WS - CAN1_TX - - FMC_D3 - - EVENT

OUT

PD2 -- TIM3_ETR - - - - - UART5_RX - - - SDIO_CMD DCMI_

D11 -EVENT

OUT

PD3 TRACE

D1 ----

SPI2_SCK/

I2S2_CK -USART2_

CTS -QUADSPI_

CLK --FMC_CLK

DCMI_

D5 -EVENT

OUT

PD4 - - - - - - - USART2_

RTS -- - -FMC_NOE--

EVENT

OUT

PD5 - - - - - - - USART2_

TX -- - -FMC_NWE--

EVENT

OUT

PD6 - - - - -

SPI3_

MOSI/

I2S3_SD

SAI1_

SD_A

USART2_

RX -- - -

FMC_

NWAIT

DCMI_

D10 -EVENT

OUT

PD7 - - - - - - - USART2_

SPDIF_

RX0 -- -FMC_NE1--

EVENT

OUT

PD8 - - - - - - - USART3_

SPDIF_

RX1 - - - FMC_D13 - - EVENT

OUT

PD9 - - - - - - - USART3_

RX - - - - FMC_D14 - - EVENT

OUT

PD10-- - --- -

USART3_

CK - - - - FMC_D15 - - EVENT

OUT

PD11 ----

FMPI2C1

_SMBA --

USART3_

CTS -QUADSPI_

BK1_IO0 SAI2_SD_A - FMC_A16 - - EVENT

OUT

PD12 - - TIM4_CH1 - FMPI2C1

_SCL --

USART3_

RTS -QUADSPI_

BK1_IO1 SAI2_FS_A - FMC_A17 - - EVENT

OUT

PD13 - - TIM4_CH2 - FMPI2C1

_SDA ----

QUADSPI_

BK1_IO3 SAI2_SCK_A - FMC_A18 - - EVENT

OUT

PD14 - - TIM4_CH3 - FMPI2C1

_SCL ---

SAI2_

SCK_A -- -FMC_D0--

EVENT

OUT

PD15 - - TIM4_CH4 - FMPI2C1

_SDA ---- - - -FMC_D1--

EVENT

OUT

Table 11. Alternate function (continued)

Port

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

SYS TIM1/2 TIM3/4/5

TIM8/9/

10/11/

CEC

I2C1/2/3

/4/CEC

SPI1/2/3/

SPI2/3/4/

SAI1

SPI2/3/

USART1/

2/3/UART

5/SPDIFR

SAI/

USART6/

UART4/5/

SPDIFRX

CAN1/2

TIM12/13/

14/

QUADSPI

SAI2/

QUADSPI/

OTG2_HS/

OTG1_FS

FMC/

SDIO/

OTG2_FS

DCMI -SYS

STM32F446xC/E Pinout and pin description

DocID027107 Rev 6 63/202

Port E

PE0 - - TIM4_ETR - - - - - - - SAI2_

MCLK_A -FMC_

NBL0 DCMI_D2 - EVENT

OUT

PE1 - - - - - - - - - - - - FMC_

NBL1 DCMI_D3 - EVENT

OUT

PE2 TRACE

CLK ----SPI4_SCK

SAI1_

MCLK_A --

QUADSPI_

BK1_IO2 --FMC_A23--

EVENT

OUT

PE3 TRACE

D0 -----

SAI1_

SD_B - - - - - FMC_A19 - - EVENT

OUT

PE4 TRACE

D1 - - - - SPI4_NSS SAI1_

FS_A - - - - - FMC_A20 DCMI_D4 - EVENT

OUT

PE5 TRACE

D2 - - TIM9_CH1 - SPI4_MISO SAI1_

SCK_A - - - - - FMC_A21 DCMI_D6 - EVENT

OUT

PE6 TRACE

D3 - - TIM9_CH2 - SPI4_MOSI SAI1_

SD_A - - - - - FMC_A22 DCMI_D7 - EVENT

OUT

PE7 - TIM1_ETR - - - - - - UART5_RX - QUADSPI_

BK2_IO0 -FMC_D4- -

EVENT

OUT

PE8 - TIM1_CH1N - - - - - - UART5_TX - QUADSPI_

BK2_IO1 -FMC_D5- -

EVENT

OUT

PE9 - TIM1_CH1 - - - - - - - - QUADSPI_

BK2_IO2 -FMC_D6- -

EVENT

OUT

PE10 - TIM1_CH2N - - - - - - - - QUADSPI_

BK2_IO3 -FMC_D7- -

EVENT

OUT

PE11 - TIM1_CH2 - - - SPI4_NSS - - - -

SAI2_

SD_B - FMC_D8 - - EVENT

OUT

PE12 - TIM1_CH3N - - - SPI4_SCK - - - - SAI2_

SCK_B -FMC_D9- -

EVENT

OUT

PE13 - TIM1_CH3 - - - SPI4_MISO - - - - SAI2_

FS_B - FMC_D10 - - EVENT

OUT

PE14 - TIM1_CH4 - - - SPI4_MOSI - - - - SAI2_

MCLK_B -FMC_D11- -

EVENT

OUT

PE15 - TIM1_BKIN - - - -- - - - - - FMC_D12 - - EVENT

OUT

Table 11. Alternate function (continued)

Port

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

SYS TIM1/2 TIM3/4/5

TIM8/9/

10/11/

CEC

I2C1/2/3

/4/CEC

SPI1/2/3/

SPI2/3/4/

SAI1

SPI2/3/

USART1/

2/3/UART

5/SPDIFR

SAI/

USART6/

UART4/5/

SPDIFRX

CAN1/2

TIM12/13/

14/

QUADSPI

SAI2/

QUADSPI/

OTG2_HS/

OTG1_FS

FMC/

SDIO/

OTG2_FS

DCMI -SYS

Pinout and pin description STM32F446xC/E

64/202 DocID027107 Rev 6

Port F

PF0 - - - - I2C2_

SDA ---- - - -FMC_A0--

EVENT

OUT

PF1 - ---

I2C2_

SCL ---- - - -FMC_A1--

EVENT

OUT

PF2 - - - - I2C2_

SMBA ---- - - -FMC_A2--

EVENT

OUT

PF3 - - - - ----- - - -FMC_A3--

EVENT

OUT

PF4 - - - - ----- - - -FMC_A4--

EVENT

OUT

PF5 - - - - ----- - - -FMC_A5--

EVENT

OUT

PF6 - - - TIM10_

CH1 --

SAI1_

SD_B --

QUADSPI_

BK1_IO3 --

---

EVENT

OUT

PF7 - - - TIM11_

CH1 --

SAI1_

MCLK_B --

QUADSPI_

BK1_IO2 --

---

EVENT

OUT

PF8 - - - - - - SAI1_

SCK_B - - TIM13_CH1 QUADSPI_

BK1_IO0 ----

EVENT

OUT

PF9 - - - - - - SAI1_

FS_B - - TIM14_CH1 QUADSPI_

BK1_IO1 ----

EVENT

OUT

PF10-- - --- - - - - - - -DCMI_

D11 -EVENT

OUT

PF11 - - - - - - - - - - SAI2_SD_B - FMC_

SDNRAS

DCMI_

D12 -EVENT

OUT

PF12-- - --- - - - - - -FMC_A6--

EVENT

OUT

PF13 - - - - FMPI2C1

_SMBA ---- - - -FMC_A7--

EVENT

OUT

PF14 - - - - FMPI2C1

_SCL ---- - - -FMC_A8--

EVENT

OUT

PF15 - - - - FMPI2C1

_SDA ---- - - -FMC_A9--

EVENT

OUT

Table 11. Alternate function (continued)

Port

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

SYS TIM1/2 TIM3/4/5

TIM8/9/

10/11/

CEC

I2C1/2/3

/4/CEC

SPI1/2/3/

SPI2/3/4/

SAI1

SPI2/3/

USART1/

2/3/UART

5/SPDIFR

SAI/

USART6/

UART4/5/

SPDIFRX

CAN1/2

TIM12/13/

14/

QUADSPI

SAI2/

QUADSPI/

OTG2_HS/

OTG1_FS

FMC/

SDIO/

OTG2_FS

DCMI -SYS

STM32F446xC/E Pinout and pin description

DocID027107 Rev 6 65/202

Port G

PG0 - - - - - - - - - - - - FMC_A10 - - EVENT

OUT

PG1 - - - - - - - - - - - - FMC_A11 - - EVENT

OUT

PG2 - - - - - - - - - - - - FMC_A12 - - EVENT

OUT

PG3 - - - - - - - - - - - - FMC_A13 - - EVENT

OUT

PG4 - - - - - - - - - - - - FMC_A14/

FMC_BA0 --

EVENT

OUT

PG5 - - - - - - - - - - - - FMC_A15/

FMC_BA1 --

EVENT

OUT

PG6 - - - - - - - - - - QUADSPI_

BK1_NCS --

DCMI_

D12 -EVENT

OUT

PG7 - - - - - - - - USART6_C

K-- -FMC_INT

DCMI_

D13 -EVENT

OUT

PG8 - - - - - - - SPDIFRX_

IN2

USART6_R

TS -- -

FMC_

SDCLK --

EVENT

OUT

PG9 - - - - - - - SPDIFRX_

IN3

USART6_R

QUADSPI_

BK2_IO2 SAI2_FS_B - FMC_NE2/

FMC_NCE3

DCMI_

VSYNC(1) -EVENT

OUT

PG10 - - - - - - - - - - SAI2_SD_B - FMC_NE3 DCMI_D2 - EVENT

OUT

PG11-- - ---

SPI4_

SCK

SPDIFRX_

IN0 -- - - -DCMI_D3 - EVENT

OUT

PG12-- - ---

SPI4_

MISO

SPDIFRX_

IN1

USART6_R

TS -- -FMC_NE4--

EVENT

OUT

PG13 TRACE

D2 -----

SPI4_

MOSI -USART6_C

TS - - - FMC_A24 - - EVENT

OUT

PG14 TRACE

D3 -----

SPI4_

NSS -USART6_T

QUADSPI_

BK2_IO3 --FMC_A25--

EVENT

OUT

PG15-- - --- - -

USART6_C

TS -- -

FMC_

SDNCAS

DCMI_

D13 -EVENT

OUT

Table 11. Alternate function (continued)

Port

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

SYS TIM1/2 TIM3/4/5

TIM8/9/

10/11/

CEC

I2C1/2/3

/4/CEC

SPI1/2/3/

SPI2/3/4/

SAI1

SPI2/3/

USART1/

2/3/UART

5/SPDIFR

SAI/

USART6/

UART4/5/

SPDIFRX

CAN1/2

TIM12/13/

14/

QUADSPI

SAI2/

QUADSPI/

OTG2_HS/

OTG1_FS

FMC/

SDIO/

OTG2_FS

DCMI -SYS

Pinout and pin description STM32F446xC/E

66/202 DocID027107 Rev 6

Port H

PH0 - - - - - - - - - - - - - - - EVENT

OUT

PH1 - - - - - - - - - - - - - - - EVENT

OUT

1. The DCMI_VSYNC alternate function on PG9 is only available on silicon revision 3.

Table 11. Alternate function (continued)

Port

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

SYS TIM1/2 TIM3/4/5

TIM8/9/

10/11/

CEC

I2C1/2/3

/4/CEC

SPI1/2/3/

SPI2/3/4/

SAI1

SPI2/3/

USART1/

2/3/UART

5/SPDIFR

SAI/

USART6/

UART4/5/

SPDIFRX

CAN1/2

TIM12/13/

14/

QUADSPI

SAI2/

QUADSPI/

OTG2_HS/

OTG1_FS

FMC/

SDIO/

OTG2_FS

DCMI -SYS

DocID027107 Rev 6 67/202

STM32F446xC/E Memory mapping

5 Memory mapping

The memory map is shown in Figure 15

Figure 15. Memory map

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Memory mapping STM32F446xC/E

68/202 DocID027107 Rev 6

Table 12. STM32F446xC/E register boundary addresses(1)

Bus Boundary address Peripheral

-0xE00F FFFF - 0xFFFF FFFF Reserved

Cortex-M4 0xE000 0000 - 0xE00F FFFF Cortex-M4 internal peripherals

AHB3

0xD000 0000 - 0xDFFF FFFF FMC bank 6

0xC000 0000 - 0xCFFF FFFF FMC bank 5

0xA000 2000 - 0x0xBFFF FFFF Reserved

0xA000 1000 - 0x0xA000 1FFF QuadSPI control register

0xA000 0000 - 0xA000 0FFF FMC control register

0x9000 0000 - 0x9FFF FFFF QuadSPI

0x8000 0000 - 0x8FFF FFFF FMC bank 3

0x7000 0000 - 0x0x7FFF FFFF Reserved

0x6000 0000 - 0x6FFF FFFF FMC bank 1

-0x5006 0C00- 0x5FFF FFFF Reserved

AHB2

0x5006 0800- 0x500F 07FF Reserved

0x5005 0400 - 0x5006 07FF Reserved

0x5005 0000 - 0x5005 03FF DCMI

0x5004 0000- 0x5004 FFFF Reserved

0x5000 0000 - 0X5003 FFFF USB OTG FS

DocID027107 Rev 6 69/202

STM32F446xC/E Memory mapping

-0x4008 0000- 0x4FFF FFFF Reserved

AHB1

0x4004 0000 - 0x4007 FFFF USB OTG HS

0x4002 BC00- 0x4003 FFFF

Reserved

0x4002 B000 - 0x4002 BBFF

0x4002 9400 - 0x4002 AFFF

0x4002 9000 - 0x4002 93FF

0x4002 8C00 - 0x4002 8FFF

0x4002 8800 - 0x4002 8BFF

0x4002 8400 - 0x4002 87FF

0x4002 8000 - 0x4002 83FF

0x4002 6800 - 0x4002 7FFF

0x4002 6400 - 0x4002 67FF DMA2

0x4002 6000 - 0x4002 63FF DMA1

0X4002 5000 - 0X4002 5FFF Reserved

0x4002 4000 - 0x4002 4FFF BKPSRAM

0x4002 3C00 - 0x4002 3FFF Flash interface register

0x4002 3800 - 0x4002 3BFF RCC

0X4002 3400 - 0X4002 37FF Reserved

0x4002 3000 - 0x4002 33FF CRC

0x4002 2C00 - 0x4002 2FFF

Reserved

0x4002 2800 - 0x4002 2BFF

0x4002 2400 - 0x4002 27FF

0x4002 2000 - 0x4002 23FF

0x4002 1C00 - 0x4002 1FFF GPIOH

0x4002 1800 - 0x4002 1BFF GPIOG

0x4002 1400 - 0x4002 17FF GPIOF

0x4002 1000 - 0x4002 13FF GPIOE

0X4002 0C00 - 0x4002 0FFF GPIOD

0x4002 0800 - 0x4002 0BFF GPIOC

0x4002 0400 - 0x4002 07FF GPIOB

0x4002 0000 - 0x4002 03FF GPIOA

Table 12. STM32F446xC/E register boundary addresses(1) (continued)

Bus Boundary address Peripheral

Memory mapping STM32F446xC/E

70/202 DocID027107 Rev 6

-0x4001 6C00- 0x4001 FFFF

Reserved

APB2

0x4001 6800 - 0x4001 6BFF

0x4001 5C00 - 0x4001 5FFF SAI2

0x4001 6000 - 0x4001 67FF Reserved

0x4001 5800 - 0x4001 5BFF SAI1

0x4001 5400 - 0x4001 57FF

Reserved0x4001 5000 - 0x4001 53FF

0x4001 4C00 - 0x4001 4FFF

0x4001 4800 - 0x4001 4BFF TIM11

0x4001 4400 - 0x4001 47FF TIM10

0x4001 4000 - 0x4001 43FF TIM9

0x4001 3C00 - 0x4001 3FFF EXTI

0x4001 3800 - 0x4001 3BFF SYSCFG

0x4001 3400 - 0x4001 37FF SPI4

0x4001 3000 - 0x4001 33FF SPI1

0x4001 2C00 - 0x4001 2FFF SDIO

0x4001 2400 - 0x4001 2BFF Reserved

0x4001 2000 - 0x4001 23FF ADC1 - ADC2 - ADC3

0x4001 1800 - 0x4001 1FFF Reserved

0x4001 1400 - 0x4001 17FF USART6

0x4001 1000 - 0x4001 13FF USART1

0x4001 0800 - 0x4001 0FFF Reserved

0x4001 0400 - 0x4001 07FF TIM8

0x4001 0000 - 0x4001 03FF TIM1

Table 12. STM32F446xC/E register boundary addresses(1) (continued)

Bus Boundary address Peripheral

DocID027107 Rev 6 71/202

STM32F446xC/E Memory mapping

-0x4000 8000- 0x4000 FFFF

Reserved

APB1

0x4000 7C00 - 0x4000 7FFF

0x4000 7800 - 0x4000 7BFF

0x4000 7400 - 0x4000 77FF DAC

0x4000 7000 - 0x4000 73FF PWR

0x4000 6C00 - 0x4000 6FFF HDMI-CEC

0x4000 6800 - 0x4000 6BFF CAN2

0x4000 6400 - 0x4000 67FF CAN1

0x4000 6000 - 0x4000 63FF FMPI2C1

0x4000 5C00 - 0x4000 5FFF I2C3

0x4000 5800 - 0x4000 5BFF I2C2

0x4000 5400 - 0x4000 57FF I2C1

0x4000 5000 - 0x4000 53FF UART5

0x4000 4C00 - 0x4000 4FFF UART4

0x4000 4800 - 0x4000 4BFF USART3

0x4000 4400 - 0x4000 47FF USART2

0x4000 4000 - 0x4000 43FF SPDIFRX

0x4000 3C00 - 0x4000 3FFF SPI3 / I2S3

0x4000 3800 - 0x4000 3BFF SPI2 / I2S2

0x4000 3400 - 0x4000 37FF Reserved

0x4000 3000 - 0x4000 33FF IWDG

0x4000 2C00 - 0x4000 2FFF WWDG

0x4000 2800 - 0x4000 2BFF RTC & BKP Registers

0x4000 2400 - 0x4000 27FF Reserved

0x4000 2000 - 0x4000 23FF TIM14

0x4000 1C00 - 0x4000 1FFF TIM13

0x4000 1800 - 0x4000 1BFF TIM12

0x4000 1400 - 0x4000 17FF TIM7

0x4000 1000 - 0x4000 13FF TIM6

0x4000 0C00 - 0x4000 0FFF TIM5

0x4000 0800 - 0x4000 0BFF TIM4

0x4000 0400 - 0x4000 07FF TIM3

0x4000 0000 - 0x4000 03FF TIM2

1. The grey color is used for reserved boundary addresses.

Table 12. STM32F446xC/E register boundary addresses(1) (continued)

Bus Boundary address Peripheral

Electrical characteristics STM32F446xC/E

72/202 DocID027107 Rev 6

6 Electrical characteristics

6.1 Parameter conditions

Unless otherwise specified, all voltages are referenced to VSS.

6.1.1 Minimum and maximum values

Unless otherwise specified the minimum and maximum values are guaranteed in the worst

conditions of ambient temperature, supply voltage and frequencies by tests in production on

100% of the devices with an ambient temperature at TA = 25 °C and TA = TAmax (given by

the selected temperature range).

Data based on characterization results, design simulation and/or technology characteristics

are indicated in the table footnotes and are not tested in production. Based on

characterization, the minimum and maximum values refer to sample tests and represent the

mean value plus or minus three times the standard deviation (mean±3σ).

6.1.2 Typical values

Unless otherwise specified, typical data are based on TA = 25 °C, VDD = 3.3 V (for the

1.7 V ≤ VDD ≤ 3.6 V voltage range). They are given only as design guidelines and are not

tested.

Typical ADC accuracy values are determined by characterization of a batch of samples from

a standard diffusion lot over the full temperature range, where 95% of the devices have an

error less than or equal to the value indicated (mean±2σ).

6.1.3 Typical curves

Unless otherwise specified, all typical curves are given only as design guidelines and are

not tested.

6.1.4 Loading capacitor

The loading conditions used for pin parameter measurement are shown in Figure 16.

6.1.5 Pin input voltage

The input voltage measurement on a pin of the device is described in Figure 17.

Figure 16. Pin loading conditions Figure 17. Pin input voltage

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DocID027107 Rev 6 73/202

STM32F446xC/E Electrical characteristics

175

6.1.6 Power supply scheme

Figure 18. Power supply scheme

1. VDDA and VSSA must be connected to VDDand VSS, respectively.

2. VDDUSB is a dedicated independent USB power supply for the on-chip full-speed OTG PHY module and

associated DP/DM GPIOs. Its value is independent from the VDD and VDDA values, but must be the last

supply to be provided and the first to disappear. If VDD is different from VDDUSB and only one on-chip OTG

PHY is used, the second OTG PHY GPIOs (DP/DM) are still supplied at VDDUSB (3.3V).

3. VDDUSB is available only on WLCSP81, UFBGA144 and LQFP144 packages. For packages where VDDUSB

pin is not available, it is internally connected to VDD.

4. VCAP_2 pad is not available on LQFP64.

Caution: Each power supply pair (VDD/VSS, VDDA/VSSA...) must be decoupled with filtering ceramic

capacitors as shown above. These capacitors must be placed as close as possible to, or

below, the appropriate pins on the underside of the PCB to ensure good operation of the

device. It is not recommended to remove filtering capacitors to reduce PCB size or cost.

This might cause incorrect operation of the device.

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Electrical characteristics STM32F446xC/E

74/202 DocID027107 Rev 6

6.1.7 Current consumption measurement

Figure 19. Current consumption measurement scheme

6.2 Absolute maximum ratings

Stresses above the absolute maximum ratings listed in Table 13: Voltage characteristics,

Table 14: Current characteristics, and Table 15: Thermal characteristics may cause

permanent damage to the device. These are stress ratings only and functional operation of

the device at these conditions is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability.

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Table 13. Voltage characteristics

Symbol Ratings Min Max Unit

VDD–VSS

External main supply voltage (including VDDA, VDD,

VDDUSB and VBAT)(1)

1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power

supply, in the permitted range.

–0.3 4.0

VIN

Input voltage on FT & FTf pins(2)

2. VIN maximum value must always be respected. Refer to Table 14 for the values of the maximum allowed

injected current.

VSS–0.3 VDD+4.0

Input voltage on TTa pins VSS–0.3 4.0

Input voltage on any other pin VSS–0.3 4.0

Input voltage on BOOT0 pin VSS 9.0

|ΔVDDx| Variations between different VDD power pins - 50

|VSSX −VSS| Variations between all the different ground pins - 50

VESD(HBM) Electrostatic discharge voltage (human body model)

see Section 6.3.15:

Absolute maximum

ratings (electrical

sensitivity)

DocID027107 Rev 6 75/202

STM32F446xC/E Electrical characteristics

175

Table 14. Current characteristics

Symbol Ratings Max. Unit

ΣIVDD Total current into sum of all VDD power lines (source)(1) 240

Σ IVSS Total current out of sum of all VSS ground lines (sink)(1) - 240

Σ IVDDUSB Total current into VDDUSB power line (source) 25

IVDD Maximum current into each VDD power pin (source)(1) 100

IVSS Maximum current out of each VSS ground pin (sink)(1) - 100

IIO

Output current sunk by any I/O and control pin 25

Output current sourced by any I/Os and control pin - 25

ΣIIO

Total output current sunk by sum of all I/Os and control pins (2) 120

Total output current sunk by sum of all USB I/Os 25

Total output current sourced by sum of all I/Os and control pins(2) -120

IINJ(PIN)

Injected current on FT, FTf, RST and B pins –5/+0(3)

Injected current on TTa pins ±5(4)

ΣIINJ(PIN) Total injected current (sum of all I/O and control pins)(5) ±25

1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power supply, in the

permitted range.

2. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be

sunk/sourced between two consecutive power supply pins referring to high pin count LQFP packages.

3. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified

maximum value.

4. A positive injection is induced by VIN>VDDA while a negative injection is induced by VIN<VSS. IINJ(PIN) must

never be exceeded. Refer to Table 13 for the maximum allowed input voltage value.

5. When several inputs are submitted to a current injection, the maximum ΣIINJ(PIN) is the absolute sum of the positive and

negative injected currents (instantaneous values).

Table 15. Thermal characteristics

Symbol Ratings Value Unit

TSTG Storage temperature range –65 to +150 °C

TJMaximum junction temperature 125 °C

Electrical characteristics STM32F446xC/E

76/202 DocID027107 Rev 6

6.3 Operating conditions

6.3.1 General operating conditions

Table 16. General operating conditions

Symbol Parameter Conditions(1) Min Typ Max Unit

fHCLK Internal AHB clock frequency

Power Scale 3 (VOS[1:0] bits in

PWR_CR register = 0x01),

Regulator ON, over-drive OFF

0- 120

MHz

Power Scale 2 (VOS[1:0] bits

in PWR_CR register = 0x10),

Regulator ON

Over-

drive

OFF

-144

Over-

drive

-168

Power Scale 1 (VOS[1:0] bits

in PWR_CR register= 0x11),

Regulator ON

Over-

drive

OFF

-168

Over-

drive

-180

fPCLK1 Internal APB1 clock frequency

Over-drive OFF 0 - 42

Over-drive ON 0 - 45

fPCLK2 Internal APB2 clock frequency

Over-drive OFF 0 - 84

Over-drive ON 0 - 90

DocID027107 Rev 6 77/202

STM32F446xC/E Electrical characteristics

175

VDD Standard operating voltage - 1.7(2) -3.6

VDDA(3)(4)

Analog operating voltage

(ADC limited to 1.2 M samples)

Must be the same potential as VDD(5)

1.7(2) -2.4

Analog operating voltage

(ADC limited to 2.4 M samples) 2.4 - 3.6

VBAT Backup operating voltage - 1.65 - 3.6

VDDUSB

USB supply voltage (supply

voltage for PA11,PA12, PB14

and PB15 pins)

USB not used 1.7 - 3.6

USB used 3 - 3.6

V12

Regulator ON: 1.2 V internal

voltage on VCAP_1/VCAP_2 pins

Power Scale 3 ((VOS[1:0] bits in

PWR_CR register = 0x01), 120 MHz

HCLK max frequency

1.08 1.14 1.20

Power Scale 2 ((VOS[1:0] bits in

PWR_CR register = 0x10), 144 MHz

HCLK max frequency with over-drive

OFF or 168 MHz with over-drive ON

1.20 1.26 1.32

Power Scale 1 ((VOS[1:0] bits in

PWR_CR register = 0x11), 168 MHz

HCLK max frequency with over-drive

OFF or 180 MHz with over-drive ON

1.26 1.32 1.40

Regulator OFF: 1.2 V external

voltage must be supplied from

external regulator on

VCAP_1/VCAP_2 pins(6)

Max frequency 120 MHz 1.10 1.14 1.20

Max frequency 144 MHz 1.20 1.26 1.32

Max frequency 168 MHz 1.26 1.32 1.38

VIN

Input voltage on RST, FTf and

FT pins(7)

2 V ≤ VDD ≤ 3.6 V –0.3 - 5.5

1.7 V ≤ VDD ≤ 2 V –0.3 - 5.2

Input voltage on TTa pins - –0.3 - VDDA+0.3

Input voltage on BOOT0 pin - 0 - 9

Power dissipation at TA = 85 °C

for suffix 6 or TA = 105 °C for

suffix 7(8)

LQFP64 - - 345

WLCSP81 - - 417

LQFP100 - - 476

LQFP 144 - - 606

UFBGA144 (7x7) - - 392

UFBGA144(10x10) - - 417

Ambient temperature for 6 suffix

version

Maximum power dissipation –40 - 85

°C

Low power dissipation(9) –40 - 105

Ambient temperature for 7 suffix

version

Maximum power dissipation –40 - 105

°C

Low power dissipation(9) –40 - 125

TJ Junction temperature range

6 suffix version –40 - 105

°C

7 suffix version –40 - 125

Table 16. General operating conditions (continued)

Symbol Parameter Conditions(1) Min Typ Max Unit

Electrical characteristics STM32F446xC/E

78/202 DocID027107 Rev 6

6.3.2 VCAP_1/VCAP_2 external capacitor

Stabilization for the main regulator is achieved by connecting external capacitor CEXT to the

VCAP_1 and VCAP_2 pin. For packages supporting only 1 VCAP pin, the 2 CEXT capacitors are

replaced by a single capacitor. CEXT is specified in Table 18.

1. The over-drive mode is not supported at the voltage ranges from 1.7 to 2.1 V.

2. VDD/VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 3.16.2:

Internal reset OFF).

3. When the ADC is used, refer to Table 74: ADC characteristics.

4. If VREF+ pin is present, it must respect the following condition: VDDA-VREF+ < 1.2 V.

5. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and

VDDA can be tolerated during power-up and power-down operation.

6. The over-drive mode is not supported when the internal regulator is OFF.

7. To sustain a voltage higher than VDD+0.3, the internal Pull-up and Pull-Down resistors must be disabled

8. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax.

9. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax.

Table 17. Limitations depending on the operating power supply range

Operating

power supply

range

ADC operation

Maximum Flash

memory access

frequency with

no wait states

(fFlashmax)

Maximum HCLK

frequency vs Flash

memory wait states

(1)(2)

I/O operation

Possible Flash

memory

operations

VDD =1.7 to

2.1 V(3)

Conversion time

up to 1.2 Msps 20 MHz(4)

168 MHz with 8 wait

states and over-drive

OFF

– No I/O

compensation

8-bit erase and

program

operations only

VDD = 2.1 to

2.4 V

Conversion time

up to 1.2 Msps 22 MHz

180 MHz with 8 wait

states and over-drive

– No I/O

compensation

16-bit erase and

program

operations

VDD = 2.4 to

2.7 V

Conversion time

up to 2.4 Msps 24 MHz

180 MHz with 7 wait

states and over-drive

– I/O

compensation

works

16-bit erase and

program

operations

VDD = 2.7 to

3.6 V(5)

Conversion time

up to 2.4 Msps 30 MHz

180 MHz with 5 wait

states and over-drive

– I/O

compensation

works

32-bit erase and

program

operations

1. Applicable only when the code is executed from Flash memory. When the code is executed from RAM, no wait state is

required.

2. Thanks to the ART accelerator and the 128-bit Flash memory, the number of wait states given here does not impact the

execution speed from Flash memory since the ART accelerator allows to achieve a performance equivalent to 0 wait state

program execution.

3. VDD/VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 3.16.2:

Internal reset OFF).

4. Prefetch is not available.

5. The voltage range for USB full speed PHYs can drop down to 2.7 V. However the electrical characteristics of D- and D+

pins will be degraded between 2.7 and 3 V.

DocID027107 Rev 6 79/202

STM32F446xC/E Electrical characteristics

175

Figure 20. External capacitor CEXT

1. Legend: ESR is the equivalent series resistance.

6.3.3 Operating conditions at power-up / power-down (regulator ON)

Subject to general operating conditions for TA.

6.3.4 Operating conditions at power-up / power-down (regulator OFF)

Subject to general operating conditions for TA.

Table 18. VCAP_1/VCAP_2 operating conditions(1)

1. When bypassing the voltage regulator, the two 2.2 µF VCAP capacitors are not required and should be

replaced by two 100 nF decoupling capacitors.

Symbol Parameter Conditions

CEXT Capacitance of external capacitor 2.2 µF

ESR ESR of external capacitor < 2 Ω

CEXT

Capacitance of external capacitor with a

single VCAP pin available 4.7 µF

ESR ESR of external capacitor with a single

VCAP pin available < 1 Ω

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Table 19. Operating conditions at power-up/power-down (regulator ON)

Symbol Parameter Min Max

tVDD

VDD rise time rate 20 ∞

VDD fall time rate 20 ∞

Table 20. Operating conditions at power-up / power-down (regulator OFF)(1)

1. To reset the internal logic at power-down, a reset must be applied on pin PA0 when VDD reach below

1.08 V.

Symbol Parameter Conditions Min Max Unit

tVDD

VDD rise time rate Power-up 20 ∞

µs/V

VDD fall time rate Power-down 20 ∞

tVCAP

VCAP_1 and VCAP_2 rise time rate Power-up 20 ∞

VCAP_1 and VCAP_2 fall time rate Power-down 20 ∞

Electrical characteristics STM32F446xC/E

80/202 DocID027107 Rev 6

6.3.5 Reset and power control block characteristics

The parameters given in Table 21 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 16.

Table 21. reset and power control block characteristics

Symbol Parameter Conditions Min Typ Max Unit

VPVD

Programmable voltage

detector level selection

PLS[2:0]=000 (rising edge) 2.09 2.14 2.19 V

PLS[2:0]=000 (falling edge) 1.98 2.04 2.08 V

PLS[2:0]=001 (rising edge) 2.23 2.30 2.37 V

PLS[2:0]=001 (falling edge) 2.13 2.19 2.25 V

PLS[2:0]=010 (rising edge) 2.39 2.45 2.51 V

PLS[2:0]=010 (falling edge) 2.29 2.35 2.39 V

PLS[2:0]=011 (rising edge) 2.54 2.60 2.65 V

PLS[2:0]=011 (falling edge) 2.44 2.51 2.56 V

PLS[2:0]=100 (rising edge) 2.70 2.76 2.82 V

PLS[2:0]=100 (falling edge) 2.59 2.66 2.71 V

PLS[2:0]=101 (rising edge) 2.86 2.93 2.99 V

PLS[2:0]=101 (falling edge) 2.65 2.84 3.02 V

PLS[2:0]=110 (rising edge) 2.96 3.03 3.10 V

PLS[2:0]=110 (falling edge) 2.85 2.93 2.99 V

PLS[2:0]=111 (rising edge) 3.07 3.14 3.21 V

PLS[2:0]=111 (falling edge) 2.95 3.03 3.09 V

VPVDhyst(1) PVD hysteresis - - 100 - mV

VPOR/PDR

Power-on/power-down

reset threshold

Falling edge 1.60 1.68 1.76 V

Rising edge 1.64 1.72 1.80 V

VPDRhyst(1) PDR hysteresis - - 40 - mV

VBOR1

Brownout level 1

threshold

Falling edge 2.13 2.19 2.24 V

Rising edge 2.23 2.29 2.33 V

VBOR2

Brownout level 2

threshold

Falling edge 2.44 2.50 2.56 V

Rising edge 2.53 2.59 2.63 V

VBOR3

Brownout level 3

threshold

Falling edge 2.75 2.83 2.88 V

Rising edge 2.85 2.92 2.97 V

VBORhyst(1) BOR hysteresis - - 100 - mV

TRSTTEMPO

(1)(2) POR reset temporization - 0.5 1.5 3.0 ms

DocID027107 Rev 6 81/202

STM32F446xC/E Electrical characteristics

175

6.3.6 Over-drive switching characteristics

When the over-drive mode switches from enabled to disabled or disabled to enabled, the

system clock is stalled during the internal voltage set-up.

The over-drive switching characteristics are given in Table 22. They are sbject to general

operating conditions for TA.

6.3.7 Supply current characteristics

The current consumption is a function of several parameters and factors such as the

operating voltage, ambient temperature, I/O pin loading, device software configuration,

operating frequencies, I/O pin switching rate, program location in memory and executed

binary code.

The current consumption is measured as described in Figure 19: Current consumption

measurement scheme.

All the run-mode current consumption measurements given in this section are performed

with a reduced code that gives a consumption equivalent to CoreMark code.

IRUSH(1)

InRush current on

voltage regulator power-

on (POR or wakeup

from Standby)

- - 160 200 mA

ERUSH(1)

InRush energy on

voltage regulator power-

on (POR or wakeup

from Standby)

VDD = 1.7 V, TA = 105 °C,

IRUSH = 171 mA for 31 µs --5.4µC

1. Guaranteed based on test during characterization.

2. The reset temporization is measured from the power-on (POR reset or wakeup from VBAT) to the instant

when first instruction is read by the user application code.

Table 21. reset and power control block characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

Table 22. Over-drive switching characteristics(1)

1. Guaranteed based on test during characterization.

Symbol Parameter Conditions Min Typ Max Unit

Tod_swen Over_drive switch

enable time

HSI -45 -

µs

HSE max for 4 MHz

and min for 26 MHz 45 -100

External HSE

50 MHz -40 -

Tod_swdis Over_drive switch

disable time

HSI -20 -

HSE max for 4 MHz

and min for 26 MHz. 20 -80

External HSE

50 MHz -15 -

Electrical characteristics STM32F446xC/E

82/202 DocID027107 Rev 6

Typical and maximum current consumption

The MCU is placed under the following conditions:

•All I/O pins are in input mode with a static value at VDD or VSS (no load).

•All peripherals are disabled except if it is explicitly mentioned.

•The Flash memory access time is adjusted both to fHCLK frequency and VDD range

(see Table 17: Limitations depending on the operating power supply range).

•Regulator ON

•The voltage scaling and over-drive mode are adjusted to fHCLK frequency as follows:

– Scale 3 for fHCLK ≤ 120 MHz

– Scale 2 for 120 MHz < fHCLK ≤ 144 MHz

– Scale 1 for 144 MHz < fHCLK ≤ 180 MHz. The over-drive is only ON at 180 MHz.

•The system clock is HCLK, fPCLK1 = fHCLK/4, and fPCLK2 = fHCLK/2.

•External clock frequency is 8 MHz and PLL is ON when fHCLK is higher than 16 MHz.

•Flash is enabled except if explicitly mentioned as disable.

•The maximum values are obtained for VDD = 3.6 V and a maximum ambient

temperature (TA), and the typical values for TA= 25 °C and VDD = 3.3 V unless

otherwise specified.

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STM32F446xC/E Electrical characteristics

175

Table 23. Typical and maximum current consumption in Run mode, code with data processing

running from Flash memory (ART accelerator enabled except prefetch) or RAM(1)

Symbol Parameter Conditions fHCLK (MHz) Typ

Max(2)

Unit

TA =

25 °C

TA =

85 °C

TA =

105 °C

IDD

Supply

current in

RUN mode

External clock,

PLL ON,

all peripherals

enabled(3)(4)

180 72 83.0(5) 100.0 110.0(5)

168 65 71.0 95.3 101.0

150 59 63.6 85.4 100.8

144(6) 54 58.4 78.8 91.2

120 40 44.9 62.1 73.2

90 30 35.3 50.7 60.0

60 21 25.5 39.2 46.8

30 12 16.2 28.1 36.0

25 10 14.41 26.17 32.4

HSI, PLL OFF,

all peripherals

enabled

16 6 11.4 23.1 25.2

8 3 9.5 20.3 22.5

4 2.3 8.3 18.9 21.1

2 1.8 7.7 18.1 20.5

External clock,

PLL ON,

all Peripherals

disabled(3)

180 32 42.0(5) 59.0 75.0(5)

168 29 35.5 51.4 55.7

150 26 31.5 47.8 51.9

144(6) 24 29.2 44.7 48.6

120 18 23.3 36.8 40.4

90 14 19.0 31.8 35.1

60 10 14.7 26.9 29.9

30 6 10.7 22.1 24.9

25 5 9.96 21.24 24.02

HSI, PLL OFF,

all peripherals

disabled(3)

16 3 8.7 18.9 21.9

8 2 8.1 17.8 20.9

4 1.7 7.64 17.23 20.32

2 1.4 7.4 16.94 20.03

1. Code and data processing running from SRAM1 using boot pins.

2. Guaranteed based on test during characterization.

3. When analog peripheral blocks such as ADCs, DACs, HSE, LSE, HSI, or LSI are ON, an additional power consumption

should be considered.

4. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA per ADC

for the analog part.

5. Tested in production.

6. Overdrive OFF

Electrical characteristics STM32F446xC/E

84/202 DocID027107 Rev 6

Table 24. Typical and maximum current consumption in Run mode, code with data processing

running from Flash memory (ART accelerator enabled with prefetch) or RAM(1)

Symbol Parameter Conditions fHCLK (MHz) Typ

Max(2)

Unit

TA =

25 °C

TA =

85 °C

TA =

105 °C

IDD

Supply

current in

RUN mode

External clock,

PLL ON,

all peripherals

enabled(3)(4)

180 86 93.0 115.0 125.0

168(5) 79 85.1 111.2 117.7

150 73 79.6 104.8 111.2

144(5) 68 73.5 97.3 103.3

120 54 59.3 79.7 84.7

90 42 47.23 65.50 70.10

60 29 33.7 49.5 53.4

30 16 20.8 34.0 37.4

25 13 18.4 31.2 34.5

HSI, PLL OFF,

all peripherals

enabled(3)(4)

16 8 13.8 25.0 28.3

8 5 10.8 21.1 24.2

4 3.0 9.1 18.9 22.0

2 2.1 8.1 17.8 20.9

External clock,

PLL ON,

all Peripherals

disabled(3)

180 46 55.0 75.0 86.0

168 43 49.6 67.5 72.6

150 41 48.2 65.8 70.8

144(5) 38 43.6 61.9 66.8

120 32 37.3 53.7 58.0

90 26 30.7 46.0 50.0

60 18 22.8 36.4 40.1

30 10 14.9 27.1 30.2

25 9 13.55 25.40 28.54

HSI, PLL OFF,

all peripherals

disabled(3)

16 5 11.1 21.8 25.0

8 3 9.5 19.4 22.5

4 2.4 8.34 18.10 21.17

2 1.8 7.77 17.39 20.50

1. Code and data processing running from SRAM1 using boot pins.

2. Guaranteed based on test during characterization.

3. When analog peripheral blocks such as ADCs, DACs, HSE, LSE, HSI, or LSI are ON, an additional power consumption

should be considered.

4. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA per ADC

for the analog part.

5. Overdrive OFF

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175

Table 25. Typical and maximum current consumption in Run mode, code with data processing

running from Flash memory (ART accelerator disabled)

Symbol Parameter Conditions fHCLK (MHz) Typ

Max(1)

Unit

TA=

25 °C TA=85 °C TA=105 °C

IDD

Supply

current in

RUN mode

External clock,

PLL ON,

all peripherals

enabled(2)(3)

180 81 89.0 110.0 120.0

168(4) 74 80.2 105.7 112.0

150 69 74.9 99.5 105.6

144(4) 63 69.3 92.4 98.1

120 51 56.3 76.1 81.1

90 40 45.32 63.19 67.63

60 28 33.1 48.7 52.6

30 16 20.8 34.0 37.4

25 13 18.4 31.2 34.5

External clock,

PLL ON,

all Peripherals

disabled(2)(3)

16 8 13.8 25.0 28.2

8 5 10.8 21.1 24.2

4 3.0 9.1 19.0 22.0

2 2.1 8.1 17.9 20.9

180 41 47.0 69.0 79.0

168 38 43.2 61.9 67.1

150 37 41.8 60.3 65.4

144(4) 34 39.3 56.9 61.6

120 29 34.3 50.2 54.4

HSI, PLL OFF,

all peripherals

disabled(3)

90 24 28.8 43.6 47.5

60 17 22.0 35.6 39.2

30 10 14.8 27.0 30.1

25 8 13.51 25.36 28.47

HSI, PLL OFF,

all Peripherals

disabled(3)

16 5 11.1 21.8 24.9

8 3 9.5 19.4 22.5

4 2.3 8.35 18.12 21.17

2 1.8 7.78 17.42 20.51

1. Guaranteed based on test during characterization unless otherwise specified.

2. When analog peripheral blocks such as ADCs, DACs, HSE, LSE, HSI, or LSI are ON, an additional power consumption

should be considered.

3. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA per ADC for

the analog part.

4. Overdrive OFF

Electrical characteristics STM32F446xC/E

86/202 DocID027107 Rev 6

Table 26. Typical and maximum current consumption in Sleep mode(1)

Symbol Parameter Conditions fHCLK

(MHz) Typ

Max

Unit

TA = 25

°C

TA = 25

°C

TA = 25

°C

IDD

Supply

current in

Sleep

mode

all

peripherals

enabled

External

clock,

PLL ON,

Flash on

180 51.2 59.00 77.25 102.00

168(2) 46.8 53.94 66.48 79.40

150 42.2 49.26 60.84 73.41

144(2) 38.6 45.37 55.47 66.96

120 29.3 35.70 42.49 51.46

90 22.8 29.17 34.78 43.12

60 16.3 22.41 27.12 34.83

30 10.1 16.03 19.72 26.86

25 9.0 14.92 18.41 25.38

HSI, PLL

off, Flash

16 6.5 13.10 15.1 22.3

8 5.2 12.31 13.5 20.4

4 4.5 11.63 12.5 19.3

2 4.1 11.23 12.0 18.8

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STM32F446xC/E Electrical characteristics

175

IDD

Supply

current in

Sleep

mode

External

clock, PLL

on all

peripherals

disabled

Flash on

180 11.36 17.59 28.2 51.6

168(2) 10.20 16.19 22.0 31.8

150 9.53 15.59 21.1 30.9

144(2) 8.90 14.87 19.7 28.4

120 7.35 13.24 16.5 23.3

90 6.39 12.40 15.3 21.9

60 5.28 11.17 14.1 20.7

30 4.43 10.31 13.1 19.6

25 4.23 10.12 12.85 19.30

Flash in

Deep

Power

Down

mode

180 8.3 13.44 30.72 37.20

168(2) 7.3 12.25 25.16 28.80

150 6.7 11.60 24.27 27.84

144(2) 6.1 11.08 23.25 26.28

120 4.7 9.64 20.95 23.72

90 3.8 8.80 19.77 22.57

60 2.8 7.74 18.69 21.32

30 2.0 6.89 17.66 20.40

25 1.8 6.70 17.43 20.17

Flash in

STOP

mode

180 8.3 13.44 30.72 37.20

168(2) 7.3 12.25 25.16 28.80

150 6.7 11.60 24.27 27.84

144(2) 6.1 11.08 23.25 26.28

120 4.7 9.64 20.95 23.72

90 3.8 8.80 19.77 22.57

60 2.8 7.74 18.69 21.32

30 2.0 6.89 17.66 20.40

25 1.8 6.70 17.43 20.17

Table 26. Typical and maximum current consumption in Sleep mode(1) (continued)

Symbol Parameter Conditions fHCLK

(MHz) Typ

Max

Unit

TA = 25

°C

TA = 25

°C

TA = 25

°C

Electrical characteristics STM32F446xC/E

88/202 DocID027107 Rev 6

IDD

Supply

current in

Sleep

mode

HSI, PLL

off, all

peripherals

disabled

Flash on

16 3.89 4.93 11.72 18.54

8 2.45 3.29 11.66 18.46

4 1.69 2.56 11.60 18.40

2 1.28 2.22 11.57 18.37

Flash in

Deep

Power

Down

mode

16 1.0 6.65 16.54 19.50

8 0.9 6.93 16.48 19.45

4 0.9 6.90 16.43 19.39

2 0.9 6.88 16.41 19.37

Flash in

STOP

mode

16 1.0 6.7 16.5 19.5

8 0.9 6.9 16.5 19.5

4 0.9 6.9 16.4 19.4

2 0.9 6.9 16.4 19.4

1. Guaranteed based on test during characterization unless otherwise specified.

2. Overdrive OFF

Table 26. Typical and maximum current consumption in Sleep mode(1) (continued)

Symbol Parameter Conditions fHCLK

(MHz) Typ

Max

Unit

TA = 25

°C

TA = 25

°C

TA = 25

°C

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STM32F446xC/E Electrical characteristics

175

Table 27. Typical and maximum current consumptions in Stop mode

Symbol Parameter Conditions

Typ

Max

Unit

VDD = 3.6 V

TA =

25 °C

TA =

25 °C(1)

TA =

85 °C

TA =

105 °C(1)

IDD_STOP_NM

(normal

mode)

Supply current in

Stop mode with

voltage regulator in

main regulator mode

Flash memory in Stop mode, all

oscillators OFF, no independent

watchdog

0.234 1.2 10 16

Flash memory in Deep power

down mode, all oscillators OFF,

no independent watchdog

0.205 1 9.5 15

Supply current in

Stop mode with

voltage regulator in

Low Power regulator

mode

Flash memory in Stop mode, all

oscillators OFF, no independent

watchdog

0.15 0.95 8.5 14

Flash memory in Deep power

down mode, all oscillators OFF,

no independent watchdog

0.121 0.9 6 12

IDD_STOP_UD

M(under-

drive mode)

Supply current in

Stop mode with

voltage regulator in

main regulator and

under-drive mode

Flash memory in Deep power

down mode, main regulator in

under-drive mode, all oscillators

OFF, no independent watchdog

0.119 0.4 3 5

Supply current in

Stop mode with

voltage regulator in

Low Power regulator

and under-drive

mode

Flash memory in Deep power

down mode, Low Power

regulator in under-drive mode,

all oscillators OFF, no

independent watchdog

0.055 0.35 3 5

1. Data based on characterization, tested in production.

Electrical characteristics STM32F446xC/E

90/202 DocID027107 Rev 6

Table 28. Typical and maximum current consumptions in Standby mode

Symbol Parameter Conditions

Typ(1) Max(2)

Unit

TA = 25 °C TA =

25 °C

TA =

85 °C

TA =

105 °C

VDD =

1.7 V

VDD=

2.4 V

VDD =

3.3 V VDD = 3.3 V

IDD_STBY

Supply

current in

Standby mode

Backup SRAM ON, and LSE

oscillator in low power mode 2.43 3.44 4.12 7 20 36

µA

Backup SRAM OFF, RTC ON

and LSE oscillator in low

power mode

1.81 2.81 3.33 6 17 31

Backup SRAM ON, RTC ON

and LSE oscillator in high

drive mode

3.32 4.33 4.95 8 21 37

Backup SRAM OFF, RTC ON

and LSE oscillator in high

drive mode

2.57 3.59 4.16 7 18 32

Backup SRAM ON, RTC and

LSE OFF 2.03 2.73 3.5 6(3) 19 35(3)

Backup SRAM OFF, RTC

and LSE OFF 1.28 1.97 2.03 5(3) 16 30(3)

1. When the PDR is OFF (internal reset is OFF), the typical current consumption is reduced by 1.2 µA.

2. Guaranteed based on test during characterization unless otherwise specified.

3. Tested in production.

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STM32F446xC/E Electrical characteristics

175

Figure 21. Typical VBAT current consumption

(RTC ON/backup RAM OFF and LSE in low power mode)

Table 29. Typical and maximum current consumptions in VBAT mode

Symbol Parameter Conditions(1)

Typ Max(2)

Unit

TA = 25 °C TA =

85 °C

TA =

105 °C

VBAT

1.7 V

VBAT=

2.4 V

VBAT

3.3 V

VBAT = 3.6 V

IDD_VBAT

Backup

domain

supply

current

Backup SRAM ON, RTC ON

and LSE oscillator in low power

mode

1.46 1.62 1.83 6 11

µA

Backup SRAM OFF, RTC ON

and LSE oscillator in low power

mode

0.72 0.85 1.00 3 5

Backup SRAM ON, RTC ON

and LSE oscillator in high drive

mode

2.24 2.40 2.64 - -

Backup SRAM OFF, RTC ON

and LSE oscillator in high drive

mode

1.50 1.64 1.86 - -

Backup SRAM ON, RTC and

LSE OFF 0.74 0.75 0.78 5 10

Backup SRAM OFF, RTC and

LSE OFF 0.05 0.05 0.05 2 4

1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.

2. Guaranteed based on test during characterization.

Electrical characteristics STM32F446xC/E

92/202 DocID027107 Rev 6

Figure 22. Typical VBAT current consumption

(RTC ON/backup RAM OFF and LSE in high drive mode)

Additional current consumption

The MCU is placed under the following conditions:

•All I/O pins are configured in analog mode.

•The Flash memory access time is adjusted to fHCLK frequency.

•The voltage scaling is adjusted to fHCLK frequency as follows:

– Scale 3 for fHCLK ≤ 120 MHz,

– Scale 2 for 120 MHz < fHCLK ≤ 144 MHz

– Scale 1 for 144 MHz < fHCLK ≤ 180 MHz. The over-drive is only ON at 180 MHz.

•The system clock is HCLK, fPCLK1 = fHCLK/4, and fPCLK2 = fHCLK/2.

•HSE crystal clock frequency is 8 MHz.

•Flash is enabled except if explicitly mentioned as disable.

•When the regulator is OFF, V12 is provided externally as described in Table 16:

General operating conditions

•TA= 25 °C.

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175

Table 30. Typical current consumption in Run mode, code with data processing

running from Flash memory or RAM, regulator ON

(ART accelerator enabled except prefetch), VDD=1.7 V(1)

Symbol Parameter Conditions fHCLK (MHz) Typ

Max

Unit

TA =

25 °C

TA =

85 °C

TA =

105 °C

IDD

Supply current in

Run mode from

VDD supply

All Peripherals

enabled

168 65.11 70.0 79.7 90.0

150 58.31 62.8 73.4 79.9

144 53.14 57.1 69.9 75.3

120 39.58 47.2 60.7 71.4

90 29.99 34.70 45.23 49.34

60 20.37 25.2 35.2 38.2

30 11.37 12.9 28.4 33.2

25 9.65 10.9 17.8 24.3

All Peripherals

disabled

168 29.74 32.43 42.4 48.5

150 25.81 29.12 39.4 43.8

144 24.57 26.61 36.0 41.9

120 17.69 22.09 32.9 40.8

90 13.58 15.92 30.0 36.5

60 9.41 11.05 24.4 30.2

30 5.44 6.64 15.0 22.0

25 4.73 5.72 12.57 19.06

1. When peripherals are enabled, the power consumption corresponding to the analog part of the peripherals (such as ADC,

or DAC) is not included.

Electrical characteristics STM32F446xC/E

94/202 DocID027107 Rev 6

Table 31. Typical current consumption in Run mode, code with data processing running

from Flash memory, regulator OFF (ART accelerator enabled except prefetch)(1)

Symbol Parameter Conditions fHCLK

(MHz)

VDD=3.3 V VDD=1.7 V

Unit

IDD12 IDD IDD12 IDD

IDD12 / IDD

Supply current in

Run mode from

V12 and VDD

supply

All Peripherals

enabled

168 61.72 1.6 60.15 1.5

150 51.69 1.5 55.46 1.4

144 51.45 1.5 50.94 1.3

120 38.94 1.3 40.66 1.2

90 29.48 1.1 28.18 1.0

60 19.23 1.0 20.05 0.8

30 10.41 0.9 11.26 0.7

25 8.83 0.8 9.56 0.6

All Peripherals

disabled

168 31.44 1.6 30.06 1.5

150 28.67 1.5 27.38 1.4

144 25.51 1.5 23.37 1.3

120 19.06 1.3 21.73 1.2

90 14.83 1.2 14.74 1.0

60 10.16 1.0 10.30 0.8

30 5.41 0.9 5.64 0.7

25 4.599 0.8 4.80 0.6

1. When peripherals are enabled, the power consumption corresponding to the analog part of the peripherals (such as ADC,

or DAC) is not included.

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175

Table 32. Typical current consumption in Sleep mode, regulator ON, VDD=1.7 V(1)

Symbol Parameter Conditions fHCLK (MHz) Typ

Max

Unit

TA =

25 °C

TA =

85 °C

TA =

105 °C

IDD

Supply current in

Sleep mode from

VDD supply

All Peripherals

enabled Flash

168 43.7 47.5 66.5 79.3

150 39.2 42.7 60.7 73.3

144 35.7 38.8 55.3 66.9

120 26.5 28.6 41.8 51.6

90 20.0 21.91 33.85 43.20

60 13.6 15.2 25.8 34.9

30 7.4 8.5 18.4 27.0

25 6.3 7.5 16.9 25.5

All Peripherals

disabled, flash

168 7.3 8.6 21.2 31.9

150 6.6 7.94 20.4 31.0

144 6.0 7.3 18.6 28.5

120 4.6 5.5 14.9 23.4

90 3.6 4.6 13.6 22.1

60 2.6 3.4 12.5 20.8

30 1.8 2.7 11.3 19.7

25 1.6 2.49 11.09 19.42

1. When peripherals are enabled, the power consumption corresponding to the analog part of the peripherals (such as ADC,

or DAC) is not included.

Electrical characteristics STM32F446xC/E

96/202 DocID027107 Rev 6

I/O system current consumption

The current consumption of the I/O system has two components: static and

dynamic.

I/O static current consumption

All the I/Os used as inputs with pull-up generate current consumption when the pin is

externally held low. The value of this current consumption can be simply computed by using

the pull-up/pull-down resistors values given in Table 56: I/O static characteristics.

For the output pins, any external pull-down or external load must also be considered to

estimate the current consumption.

Additional I/O current consumption is due to I/Os configured as inputs if an intermediate

voltage level is externally applied. This current consumption is caused by the input Schmitt

trigger circuits used to discriminate the input value. Unless this specific configuration is

required by the application, this supply current consumption can be avoided by configuring

these I/Os in analog mode. This is notably the case of ADC input pins which should be

configured as analog inputs.

Table 33. Typical current consumption in Sleep mode, regulator OFF(1)

Symbol Parameter Conditions fHCLK (MHz)

VDD=3.3 V VDD=1.7 V Unit

IDD12 IDD IDD12 IDD -

IDD12/IDD

Supply current

in Sleep mode

from V12 and

VDD supply

All Peripherals

enabled

180 47.605 1.2 NA NA

168 44.35 1.0 41.53 0.8

150 40.58 0.9 39.96 0.8

144 35.68 0.9 34.60 0.7

120 27.30 0.9 29.11 0.7

90 20.69 0.8 19.78 0.6

60 13.88 0.7 13.36 0.6

30 7.66 0.7 7.85 0.6

25 6.49 0.7 6.66 0.5

All Peripherals

disabled

180 8.71 1.2 NA NA

168 7.00 0.9 8.42 0.8

150 6.88 0.9 7.61 0.8

144 6.29 0.9 6.99 0.7

120 4.87 0.9 5.95 0.7

90 3.78 0.8 3.96 0.6

60 2.66 0.7 2.80 0.6

30 1.65 0.7 1.74 0.6

25 1.45 0.7 1.52 0.5

1. When peripherals are enabled, the power consumption corresponding to the analog part of the peripherals (such as ADC,

or DAC) is not included.

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175

Caution: Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,

as a result of external electromagnetic noise. To avoid current consumption related to

floating pins, they must either be configured in analog mode, or forced internally to a definite

digital value. This can be done either by using pull-up/down resistors or by configuring the

pins in output mode.

I/O dynamic current consumption

In addition to the internal peripheral current consumption (see Table 35: Peripheral current

consumption), the I/Os used by an application also contribute to the current consumption.

When an I/O pin switches, it uses the current from the MCU supply voltage to supply the I/O

pin circuitry and to charge/discharge the capacitive load (internal or external) connected to

the pin:

ISW VDD fSW C××=

where

ISW is the current sunk by a switching I/O to charge/discharge the capacitive load

VDD is the MCU supply voltage

fSW is the I/O switching frequency

C is the total capacitance seen by the I/O pin: C = CINT+ CEXT

The test pin is configured in push-pull output mode and is toggled by software at a fixed

frequency.

Table 34. Switching output I/O current consumption(1)

Symbol Parameter Conditions

I/O toggling

frequency

(fsw)

Typ Unit

IDDIO

I/O switching

Current

VDD = 3.3 V

C= CINT(2)

2 MHz 0.0

8 MHz 0.2

25 MHz 0.6

50 MHz 1.1

60 MHz 1.3

84 MHz 1.8

90 MHz 1.9

VDD = 3.3 V

CEXT = 0 pF

C = CINT + CEXT

+ CS

2 MHz 0.1

8 MHz 0.4

25 MHz 1.23

50 MHz 2.43

60 MHz 2.93

84 MHz 3.86

90 MHz 4.07

Electrical characteristics STM32F446xC/E

98/202 DocID027107 Rev 6

On-chip peripheral current consumption

The MCU is placed under the following conditions:

•At startup, all I/O pins are in analog input configuration.

•All peripherals are disabled unless otherwise mentioned.

•HCLK is the system clock. fPCLK1 = fHCLK/4, and fPCLK2 = fHCLK/2.

The given value is calculated by measuring the difference of current consumption

– with all peripherals clocked off

– with only one peripheral clocked on

–f

HCLK = 180 MHz (Scale1 + over-drive ON), fHCLK = 144 MHz (Scale 2),

fHCLK = 120 MHz (Scale 3)"

•Ambient operating temperature is 25 °C and VDD=3.3 V.

IDDIO

I/O switching

Current

VDD = 3.3 V

CEXT = 10 pF

C = CINT + CEXT

+ CS

2 MHz 0.18

8 MHz 0.67

25 MHz 2.09

50 MHz 3.6

60 MHz 4.5

84 MHz 7.8

90 MHz 9.8

VDD = 3.3 V

CEXT = 22 pF

C = CINT + CEXT

+ CS

2 MHz 0.26

8 MHz 1.01

25 MHz 3.14

50 MHz 6.39

60 MHz 10.68

VDD = 3.3 V

CEXT = 33 pF

C = CINT + Cext

+ CS

2 MHz 0.33

8 MHz 1.29

25 MHz 4.23

50 MHz 11.02

1. CS is the PCB board capacitance including the pad pin. CS = 7 pF (estimated value).

2. This test is performed by cutting the LQFP144 package pin (pad removal).

Table 34. Switching output I/O current consumption(1) (continued)

Symbol Parameter Conditions

I/O toggling

frequency

(fsw)

Typ Unit

DocID027107 Rev 6 99/202

STM32F446xC/E Electrical characteristics

175

Table 35. Peripheral current consumption

Peripheral

IDD(Typ Appli)

Unit

Scale 1 +

OverDrive Scale 2 Scale 3

AHB1

GPIOA 2.29 2.14 1.89

µA/MHz

GPIOB 2.29 2.13 1.89

GPIOC 2.33 2.17 1.93

GPIOD 2.34 2.19 1.94

GPIOE 2.39 2.19 1.93

GPIOF 2.31 2.14 1.91

GPIOG 2.36 2.19 1.94

GPIOH 2.13 1.98 1.75

CRC 0.53 0.51 0.46

BKPSRAM 0.76 0.72 0.65

DMA1(1) 2.39N + 4.13 2.23N+3.56 1.97N+3.51

DMA2(1) 2.39N + 4.45 2.19N+3.72 2.00N+3.66

OTG_HS+ULPI 45.45 42.08 37.28

AHB2

DCMI 3.74 3.42 3.01

µA/MHz

OTGFS 30.04 27.88 24.69

AHB3

FMC 16.15 15.01 13.33

µA/MHz

QSPI 16.78 15.60 13.84

Electrical characteristics STM32F446xC/E

100/202 DocID027107 Rev 6

APB1

TIM2 18.18 16.92 15.07

µA/MHz

TIM3 14.49 13.47 12.00

TIM4 15.18 14.11 12.50

TIM5 16.91 15.69 14.07

TIM6 2.69 2.47 2.20

TIM7 2.56 2.44 2.17

TIM12 7.07 6.56 5.83

TIM13 4.96 4.64 4.07

TIM14 5.09 4.72 4.27

WWDG 1.07 1.00 0.93

SPI2(2) 1.89 1.78 1.57

SPI3(2) 1.93 1.81 1.67

SPDIFRX 6.91 6.44 5.80

USART2 4.20 3.83 3.40

USART3 4.22 3.94 3.50

UART4 4.13 3.89 3.40

UART5 4.04 3.78 3.33

I2C1 3.98 3.69 3.33

I2C2 3.91 3.61 3.17

I2C3 3.76 3.53 3.13

FMPI2C1 5.51 5.19 4.57

CAN1 6.58 6.14 5.43

CAN2 5.91 5.56 4.90

CEC 0.71 0.69 0.60

DAC 2.96 2.72 2.40

Table 35. Peripheral current consumption (continued)

Peripheral

IDD(Typ Appli)

Unit

Scale 1 +

OverDrive Scale 2 Scale 3

DocID027107 Rev 6 101/202

STM32F446xC/E Electrical characteristics

175

6.3.8 Wakeup time from low-power modes

The wakeup times given in Table 36 are measured starting from the wakeup event trigger up

to the first instruction executed by the CPU:

•For Stop or Sleep modes: the wakeup event is WFE.

•WKUP (PA0) pin is used to wakeup from Standby, Stop and Sleep modes.

All timings are derived from tests performed under ambient temperature and VDD=3.3 V.

APB2

TIM1 17.51 16.28 14.43

µA/MHz

TIM8 18.40 17.10 15.22

USART1 4.53 4.21 3.72

USART6 4.53 4.21 3.72

ADC1 4.69 4.35 3.85

ADC2 4.70 4.35 3.87

ADC3 4.66 4.31 3.82

SDIO 9.06 8.38 7.47

SPI1 1.97 1.89 1.67

SPI4 1.88 1.75 1.57

SYSCFG 1.51 1.40 1.23

TIM9 8.17 7.64 6.77

TIM10 5.07 4.75 4.22

TIM11 5.37 5.06 4.50

SAI1 3.89 3.64 3.17

SAI2 3.74 3.49 3.10

Bus Matrix 8.15 8.10 7.13

1. N = Number of strean enable (1..8)

2. To enable an I2S peripheral, first set the I2SMOD bit and then the I2SE bit in the SPI_I2SCFGR register.

Table 35. Peripheral current consumption (continued)

Peripheral

IDD(Typ Appli)

Unit

Scale 1 +

OverDrive Scale 2 Scale 3

Electrical characteristics STM32F446xC/E

102/202 DocID027107 Rev 6

6.3.9 External clock source characteristics

High-speed external user clock generated from an external source

In bypass mode the HSE oscillator is switched off and the input pin is a standard I/O. The

external clock signal has to respect the Table 56: I/O static characteristics. However, the

recommended clock input waveform is shown in Figure 23.

The characteristics given in Table 37 result from tests performed using an high-speed

external clock source, and under ambient temperature and supply voltage conditions

summarized in Table 16.

Table 36. Low-power mode wakeup timings

Symbol Parameter Conditions Typ(1) Max(1) Unit

tWUSLEEP(2) Wakeup from Sleep - 6 6

CPU

clock

cycle

TWUSLEEPFDSM(1)

Wakeup from Sleep

with Flash memory in

Deep power down

mode

- 33.5 50

µs

tWUSTOP(2)

Wakeup from Stop

mode with MR/LP

regulator in normal

mode

Main regulator is ON 12.8 15

Main regulator is ON and Flash

memory in Deep power down mode 104.9 115

Low power regulator is ON 20.6 28

Low power regulator is ON and

Flash memory in Deep power down

mode

112.8 120

tWUSTOP(2)

Wakeup from Stop

mode with MR/LP

regulator in Under-drive

mode

Main regulator in under-drive mode

(Flash memory in Deep power-

down mode)

110 140

Low power regulator in under-drive

mode

(Flash memory in Deep power-

down mode)

114.4 128

tWUSTDBY(2)(3) Wakeup from Standby

mode - 325 400

1. Guaranteed based on test during characterization.

2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first

instruction.

3. tWUSTDBY maximum value is given at –40 °C.

DocID027107 Rev 6 103/202

STM32F446xC/E Electrical characteristics

175

Low-speed external user clock generated from an external source

In bypass mode the LSE oscillator is switched off and the input pin is a standard I/O. The

external clock signal has to respect the Table 56: I/O static characteristics. However, the

recommended clock input waveform is shown in Figure 24.

The characteristics given in Table 38 result from tests performed using an low-speed

external clock source, and under ambient temperature and supply voltage conditions

summarized in Table 16.

Table 37. High-speed external user clock characteristics

Symbol Parameter Conditions Min Typ Max Unit

fHSE_ext

External user clock source

frequency(1)

1-50MHz

VHSEH OSC_IN input pin high level voltage 0.7VDD -V

DD V

VHSEL OSC_IN input pin low level voltage VSS -0.3V

tw(HSE)

OSC_IN high or low time(1)

1. Guaranteed by design.

5--

tr(HSE)

tf(HSE)

OSC_IN rise or fall time(1) --10

Cin(HSE) OSC_IN input capacitance(1) --5-pF

DuCy(HSE) Duty cycle - 45 - 55 %

ILOSC_IN Input leakage current VSS ≤ VIN ≤ VDD --±1µA

Table 38. Low-speed external user clock characteristics

Symbol Parameter Conditions Min Typ Max Unit

fLSE_ext

User External clock source

frequency(1)

- 32.768 1000 kHz

VLSEH

OSC32_IN input pin high level

voltage 0.7VDD -V

DD V

VLSEL OSC32_IN input pin low level voltage VSS -0.3V

tw(LSE)

tf(LSE)

OSC32_IN high or low time(1) 450 - -

tr(LSE)

tf(LSE)

OSC32_IN rise or fall time(1) - - 200

Cin(LSE) OSC32_IN input capacitance(1) --5-pF

DuCy(LSE) Duty cycle - 30 - 70 %

ILOSC32_IN Input leakage current VSS ≤ VIN ≤ VDD --±1µA

1. Guaranteed by design.

Electrical characteristics STM32F446xC/E

104/202 DocID027107 Rev 6

Figure 23. High-speed external clock source AC timing diagram

Figure 24. Low-speed external clock source AC timing diagram

High-speed external clock generated from a crystal/ceramic resonator

The high-speed external (HSE) clock can be supplied with a 4 to 26 MHz crystal/ceramic

resonator oscillator. All the information given in this paragraph are based on

characterization results obtained with typical external components specified in Table 39. In

the application, the resonator and the load capacitors have to be placed as close as

possible to the oscillator pins in order to minimize output distortion and startup stabilization

time. Refer to the crystal resonator manufacturer for more details on the resonator

characteristics (frequency, package, accuracy).

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DocID027107 Rev 6 105/202

STM32F446xC/E Electrical characteristics

175

For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the

5 pF to 25 pF range (typ.), designed for high-frequency applications, and selected to match

the requirements of the crystal or resonator (see Figure 25). CL1 and CL2 are usually the

same size. The crystal manufacturer typically specifies a load capacitance which is the

series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF

can be used as a rough estimate of the combined pin and board capacitance) when sizing

CL1 and CL2.

Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator

design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 25. Typical application with an 8 MHz crystal

1. REXT value depends on the crystal characteristics.

Low-speed external clock generated from a crystal/ceramic resonator

The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic

resonator oscillator. All the information given in this paragraph are based on

characterization results obtained with typical external components specified in Table 40. In

the application, the resonator and the load capacitors have to be placed as close as

Table 39. HSE 4-26 MHz oscillator characteristics (1)

1. Guaranteed by design.

Symbol Parameter Conditions Min Typ Max Unit

fOSC_IN Oscillator frequency - 4 - 26 MHz

RFFeedback resistor - - 200 - kΩ

IDD HSE current consumption

VDD=3.3 V,

ESR= 30 Ω,

CL=5 pF@25 MHz

- 450 -

µA

VDD=3.3 V,

ESR= 30 Ω,

CL=10 pF@25 MHz

- 530 -

ACCHSE(2)

2. This parameter depends on the crystal used in the application. The minimum and maximum values must

be respected to comply with USB standard specifications.

HSE accuracy - -500 - 500 ppm

Gm_crit_max Maximum critical crystal gmStartup - - 1 mA/V

tSU(HSE(3)

3. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz

oscillation is reached. This value is Guaranteed based on test during characterization. It is measured for a

standard crystal resonator and it can vary significantly with the crystal manufacturer.

Startup time VDD is stabilized - 2 - ms

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Electrical characteristics STM32F446xC/E

106/202 DocID027107 Rev 6

possible to the oscillator pins in order to minimize output distortion and startup stabilization

time. Refer to the crystal resonator manufacturer for more details on the resonator

characteristics (frequency, package, accuracy).

Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator

design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 26. Typical application with a 32.768 kHz crystal

Table 40. LSE oscillator characteristics (fLSE = 32.768 kHz) (1)

1. Guaranteed by design.

Symbol Parameter Conditions Min Typ Max Unit

RFFeedback resistor - - 18.4 - MΩ

IDD LSE current consumption - - - 1 µA

ACCLSE(2)

2. This parameter depends on the crystal used in the application. Refer to application note AN2867.

LSE accuracy - -500 - 500 ppm

Gm_crit_max Maximum critical crystal

Startup low-power mode - - 0.56

µA/V

Startup high-drive mode - - 1.5

tSU(LSE)(3)

3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized

32.768 kHz oscillation is reached. This value is guaranteed based on test during characterization. It is

measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.

startup time VDD is stabilized - 2 - s

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DocID027107 Rev 6 107/202

STM32F446xC/E Electrical characteristics

175

6.3.10 Internal clock source characteristics

The parameters given in Table 41 and Table 42 are derived from tests performed under

ambient temperature and VDD supply voltage conditions summarized in Table 16.

High-speed internal (HSI) RC oscillator

Figure 27. LACCHSI versus temperature

1. Guaranteed based on test during characterization.

Table 41. HSI oscillator characteristics (1)

1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

fHSI Frequency - - 16 - MHz

ACCHSI

Accuracy of the HSI

oscillator

User-trimmed with the RCC_CR

2. Guaranteed by design.

--1%

TA = - 40 to 105 °C(3)

3. Guaranteed based on test during characterization.

- 8 - 4.5 %

TA = - 10 to 85 °C(3) - 4 - 4 %

TA = 25 °C(4)

4. Factory calibrated, parts not soldered.

- 1 - 1 %

tsu(HSI)(2) HSI oscillator

startup time --2.24µs

IDD(HSI)(2) HSI oscillator

power consumption - - 60 80 µA

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Electrical characteristics STM32F446xC/E

108/202 DocID027107 Rev 6

Low-speed internal (LSI) RC oscillator

Figure 28. ACCLSI versus temperature

6.3.11 PLL characteristics

The parameters given in Table 43 and Table 44 are derived from tests performed under

temperature and VDD supply voltage conditions summarized in Table 16.

Table 42. LSI oscillator characteristics (1)

1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol Parameter Min Typ Max Unit

fLSI(2)

2. Guaranteed based on test during characterization..

Frequency 17 32 47 kHz

tsu(LSI)(3)

3. Guaranteed by design.

LSI oscillator startup time - 15 40 µs

IDD(LSI)(3) LSI oscillator power consumption - 0.4 0.6 µA

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Table 43. Main PLL characteristics

Symbol Parameter Conditions Min Typ Max Unit

fPLL_IN PLL input clock(1) -0.95

(2) 12.10MHz

fPLL_OUT PLL multiplier output clock - 12.5 - 180 MHz

fPLL48_OUT

48 MHz PLL multiplier output

clock - - 48 75 MHz

fVCO_OUT PLL VCO output - 100 - 432 MHz

DocID027107 Rev 6 109/202

STM32F446xC/E Electrical characteristics

175

tLOCK PLL lock time

VCO freq = 100 MHz 75 - 200

µs

VCO freq = 432 MHz 100 - 300

Jitter(3)

Cycle-to-cycle jitter

System clock

120 MHz

RMS - 25 -

peak

-±150 -

Period Jitter

RMS - 15 -

peak

-±200 -

Bit Time CAN jitter Cycle to cycle at 1 MHz

on 1000 samples -330 -

IDD(PLL)(4) PLL power consumption on VDD VCO freq = 100 MHz

VCO freq = 432 MHz

0.15

0.45 -0.40

0.75 mA

IDDA(PLL)(4) PLL power consumption on

VDDA

VCO freq = 100 MHz

VCO freq = 432 MHz

0.30

0.55 -0.40

0.85 mA

1. Take care of using the appropriate division factor M to obtain the specified PLL input clock values. The M factor is shared

between PLL and PLLI2S.

2. Guaranteed by design.

3. The use of 2 PLLs in parallel could degraded the Jitter up to +30%.

4. Guaranteed based on test during characterization.

Table 43. Main PLL characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

Table 44. PLLI2S (audio PLL) characteristics

Symbol Parameter Conditions Min Typ Max Unit

fPLLI2S_IN PLLI2S input clock(1) -0.95

(2) 12.10MHz

fPLLI2S_OUT PLLI2S multiplier output clock - - - 216 MHz

fVCO_OUT PLLI2S VCO output - 100 - 432 MHz

tLOCK PLLI2S lock time

VCO freq = 100 MHz 75 - 200

µs

VCO freq = 432 MHz 100 - 300

Jitter(3)

Master I2S clock jitter

Cycle to cycle at

12.288 MHz on

48KHz period,

N=432, R=5

RMS - 90 - -

peak

- ±280 - ps

Average frequency of

12.288 MHz

N = 432, R = 5

on 1000 samples

-90 -ps

WS I2S clock jitter Cycle to cycle at 48 KHz

on 1000 samples -400 - ps

Electrical characteristics STM32F446xC/E

110/202 DocID027107 Rev 6

6.3.12 PLL spread spectrum clock generation (SSCG) characteristics

The spread spectrum clock generation (SSCG) feature allows to reduce electromagnetic

interferences (see Table 52: EMI characteristics). It is available only on the main PLL.

IDD(PLLI2S)(4) PLLI2S power consumption on

VDD

VCO freq = 100 MHz

VCO freq = 432 MHz

0.15

0.45 -0.40

0.75 mA

IDDA(PLLI2S)(4) PLLI2S power consumption on

VDDA

VCO freq = 100 MHz

VCO freq = 432 MHz

0.30

0.55 -0.40

0.85 mA

1. Take care of using the appropriate division factor M to have the specified PLL input clock values.

2. Guaranteed by design.

3. Value given with main PLL running.

4. Guaranteed based on test during characterization.

Table 44. PLLI2S (audio PLL) characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

Table 45. PLLISAI characteristics

Symbol Parameter Conditions Min Typ Max Unit

fPLLSAI_IN PLLSAI input clock(1) -0.95

(2) 12.10MHz

fPLLSAI_OUT PLLSAI multiplier output clock - - - 216 MHz

fVCO_OUT PLLSAI VCO output - 100 - 432 MHz

tLOCK PLLSAI lock time

VCO freq = 100 MHz 75 - 200

µs

VCO freq = 432 MHz 100 - 300

Jitter(3)

Main SAI clock jitter

Cycle to cycle at

12.288 MHz on

48KHz period,

N=432, R=5

RMS - 90 - -

peak

- ±280 - ps

Average frequency of

12.288 MHz

N = 432, R = 5

on 1000 samples

-90 -ps

FS clock jitter Cycle to cycle at 48 KHz

on 1000 samples -400 - ps

IDD(PLLSAI)(4) PLLSAI power consumption on

VDD

VCO freq = 100 MHz

VCO freq = 432 MHz

0.15

0.45 -0.40

0.75 mA

IDDA(PLLSAI)(4) PLLSAI power consumption on

VDDA

VCO freq = 100 MHz

VCO freq = 432 MHz

0.30

0.55 -0.40

0.85 mA

1. Take care of using the appropriate division factor M to have the specified PLL input clock values.

2. Guaranteed by design.

3. Value given with main PLL running.

4. Guaranteed based on test during characterization.

DocID027107 Rev 6 111/202

STM32F446xC/E Electrical characteristics

175

Equation 1

The frequency modulation period (MODEPER) is given by the equation below:

MODEPER round fPLL_IN 4f

Mod

×()⁄[]=

fPLL_IN and fMod must be expressed in Hz.

As an example:

If fPLL_IN = 1 MHz, and fMOD = 1 kHz, the modulation depth (MODEPER) is given by

equation 1:

MODEPER round 106410

×()⁄[]250==

Equation 2

Equation 2 allows to calculate the increment step (INCSTEP):

INCSTEP round 215 1–()md PLLN××()100 5×MODEPER×()⁄[]=

fVCO_OUT must be expressed in MHz.

With a modulation depth (md) = ±2 % (4 % peak to peak), and PLLN = 240 (in MHz):

INCSTEP round 215 1–()2240××()100 5×250×()⁄[]126md(quantitazed)%==

An amplitude quantization error may be generated because the linear modulation profile is

obtained by taking the quantized values (rounded to the nearest integer) of MODPER and

INCSTEP. As a result, the achieved modulation depth is quantized. The percentage

quantized modulation depth is given by the following formula:

mdquantized% MODEPER INCSTEP×100×5×()215 1–()PLLN×()⁄=

As a result:

mdquantized% 250 126×100×5×()215 1–()240×()⁄2.002%(peak)==

Table 46. SSCG parameters constraint

Symbol Parameter Min Typ Max(1) Unit

fMod Modulation frequency - - 10 KHz

md Peak modulation depth 0.25 - 2 %

MODEPER * INCSTEP - - - 215− 1-

1. Guaranteed by design.

Electrical characteristics STM32F446xC/E

112/202 DocID027107 Rev 6

Figure 29 and Figure 30 show the main PLL output clock waveforms in center spread and

down spread modes, where:

F0 is fPLL_OUT nominal.

Tmode is the modulation period.

md is the modulation depth.

Figure 29. PLL output clock waveforms in center spread mode

Figure 30. PLL output clock waveforms in down spread mode

6.3.13 Memory characteristics

Flash memory

The characteristics are given at TA = - 40 to 105 °C unless otherwise specified.

The devices are shipped to customers with the Flash memory erased.

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Symbol Parameter Conditions Min Typ Max Unit

IDD Supply current

Write / Erase 8-bit mode, VDD = 1.7 V - 5 -

mAWrite / Erase 16-bit mode, VDD = 2.1 V - 8 -

Write / Erase 32-bit mode, VDD = 3.3 V - 12 -

DocID027107 Rev 6 113/202

STM32F446xC/E Electrical characteristics

175

Table 48. Flash memory programming

Symbol Parameter Conditions Min(1) Typ Max(1)

1. Guaranteed based on test during characterization.

Unit

tprog Word programming time Program/erase parallelism

(PSIZE) = x 8/16/32 -16100

(2)

2. The maximum programming time is measured after 100K erase operations.

µs

tERASE16KB Sector (16 KB) erase time

Program/erase parallelism

(PSIZE) = x 8 - 400 800

Program/erase parallelism

(PSIZE) = x 16 - 300 600

Program/erase parallelism

(PSIZE) = x 32 - 250 500

tERASE64KB Sector (64 KB) erase time

Program/erase parallelism

(PSIZE) = x 8 - 1200 2400

Program/erase parallelism

(PSIZE) = x 16 - 700 1400

Program/erase parallelism

(PSIZE) = x 32 - 550 1100

tERASE128KB Sector (128 KB) erase time

Program/erase parallelism

(PSIZE) = x 8 -24

Program/erase parallelism

(PSIZE) = x 16 -1.32.6

Program/erase parallelism

(PSIZE) = x 32 -12

tME Mass erase time

Program/erase parallelism

(PSIZE) = x 8 -816

Program/erase parallelism

(PSIZE) = x 16 -5.511

Program/erase parallelism

(PSIZE) = x 32 -816

Vprog Programming voltage

32-bit program operation 2.7 - 3.6 V

16-bit program operation 2.1 - 3.6 V

8-bit program operation 1.7 - 3.6 V

Table 49. Flash memory programming with VPP

Symbol Parameter Conditions Min(1) Typ Max(1) Unit

tprog Double word programming

TA = 0 to +40 °C

VDD = 3.3 V

VPP = 8.5 V

-16100

(2) µs

tERASE16KB Sector (16 KB) erase time - 230 -

mstERASE64KB Sector (64 KB) erase time - 490 -

tERASE128KB Sector (128 KB) erase time - 875 -

tME Mass erase time - 3.5 - s

Vprog Programming voltage - 2.7 - 3.6 V

Electrical characteristics STM32F446xC/E

114/202 DocID027107 Rev 6

6.3.14 EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).

the device is stressed by two electromagnetic events until a failure occurs. The failure is

indicated by the LEDs:

•Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until

a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

•FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS

through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant

with the IEC 61000-4-4 standard.

A device reset allows normal operations to be resumed.

The test results are given in Table 51. They are based on the EMS levels and classes

defined in application note AN1709.

VPP VPP voltage range - 7 - 9 V

IPP

Minimum current sunk on

the VPP pin -10--mA

tVPP(3) Cumulative time during

which VPP is applied - - - 1 hour

1. Guaranteed by design.

2. The maximum programming time is measured after 100K erase operations.

3. VPP should only be connected during programming/erasing.

Table 50. Flash memory endurance and data retention

Symbol Parameter

Conditions

Value

Unit

-- Min(1)

1. Guaranteed based on test during characterization.

NEND Endurance TA = –40 to +85 °C (6 suffix versions)

TA = –40 to +105 °C (7 suffix versions) 10 Kcycles

tRET Data retention

1 kcycle(2) at TA = 85 °C

2. Cycling performed over the whole temperature range.

Years1 kcycle(2) at TA = 105 °C 10

10 kcycles(2) at TA = 55 °C 20

Table 49. Flash memory programming with VPP (continued)

Symbol Parameter Conditions Min(1) Typ Max(1) Unit

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STM32F446xC/E Electrical characteristics

175

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical

application environment and simplified MCU software. It should be noted that good EMC

performance is highly dependent on the user application and the software in particular.

Therefore it is recommended that the user applies EMC software optimization and

prequalification tests in relation with the EMC level requested for his application.

Software recommendations

The software flowchart must include the management of runaway conditions such as:

•Corrupted program counter

•Unexpected reset

•Critical Data corruption (control registers...)

Prequalification trials

Most of the common failures (unexpected reset and program counter corruption) can be

reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1

second.

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application,

executing EEMBC code, is running. This emission test is compliant with SAE IEC61967-2

standard which specifies the test board and the pin loading.

Table 51. EMS characteristics

Symbol Parameter Conditions Level/

Class

VFESD

Voltage limits to be applied on any I/O pin to

induce a functional disturbance

VDD = 3.3 V, LQFP144, TA =

+25 °C, fHCLK = 168 MHz, conforms

to IEC 61000-4-2

VEFTB

Fast transient voltage burst limits to be

applied through 100 pF on VDD and VSS

pins to induce a functional disturbance

VDD = 3.3 V, LQFP144,

TA = +25 °C, fHCLK = 168 MHz,

conforms to IEC 61000-4-2

Electrical characteristics STM32F446xC/E

116/202 DocID027107 Rev 6

6.3.15 Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the ANSI/JEDEC standard.

Static latchup

Two complementary static tests are required on six parts to assess the latchup

performance:

•A supply overvoltage is applied to each power supply pin

•A current injection is applied to each input, output and configurable I/O pin

Table 52. EMI characteristics

Symbol Parameter Conditions Monitored

frequency band

Max vs.

[fHSE/fCPU]Unit

8/180 MHz

SEMI Peak level

VDD = 3.3 V, TA = 25 °C, LQFP144

package, conforming to SAE J1752/3

EEMBC, ART ON, all peripheral clocks

enabled, clock dithering disabled.

0.1 to 30 MHz 11

dBµV30 to 130 MHz 10

130 MHz to 1GHz 11

SAE EMI Level 3 -

VDD = 3.3 V, TA = 25 °C, LQFP144

package, conforming to SAE J1752/3

EEMBC, ART ON, all peripheral clocks

enabled, clock dithering enabled

0.1 to 30 MHz 24

dBµV30 to 130 MHz 25

130 MHz to 1GHz 20

SAE EMI level 4 -

Table 53. ESD absolute maximum ratings

Symbol Ratings Conditions Class Maximum

value(1) Unit

VESD(HBM)

Electrostatic

discharge voltage

(human body model)

TA = + 25 °C conforming to ANSI/JEDEC JS-001 2 2000

VESD(CDM)

Electrostatic

discharge voltage

(charge device model)

TA = + 25 °C conforming to ANSI/ESD STM5.3.1,

LQFP64, LQFP100, WLCSP81 packages C4 500

TA = + 25 °C conforming to ANSI/ESD STM5.3.1,

LQFP144, UFBGA144 (7 x 7), UFBGA144 (10 x 10)

packages

C3 250

1. Guaranteed based on test during characterization.

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STM32F446xC/E Electrical characteristics

175

These tests are compliant with EIA/JESD 78A IC latchup standard.

6.3.16 I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below VSS or

above VDD (for standard, 3 V-capable I/O pins) should be avoided during normal product

operation. However, in order to give an indication of the robustness of the microcontroller in

cases when abnormal injection accidentally happens, susceptibility tests are performed on a

sample basis during device characterization.

Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting

current into the I/O pins programmed in floating input mode. While current is injected into

the I/O pin, one at a time, the device is checked for functional failures.

The failure is indicated by an out of range parameter: ADC error above a certain limit (>5

LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out of –

5 µA/+0 µA range), or other functional failure (for example reset, oscillator frequency

deviation).

Negative induced leakage current is caused by negative injection and positive induced

leakage current by positive injection.

The test results are given in Table 55.

Note: It is recommended to add a Schottky diode (pin to ground) to analog pins which may

potentially inject negative currents.

Table 54. Electrical sensitivities

Symbol Parameter Conditions Class

LU Static latch-up class TA = +105 °C conforming to JESD78A II level A

Table 55. I/O current injection susceptibility(1)

Symbol Description

Functional susceptibility

Unit

Negative

injection

Positive

injection

IINJ

Injected current on BOOT0 pin –0 NA

Injected current on NRST pin –0 NA

Injected current on PE2, PE3,PE4, PE5, PE6, PC13, PC14,

PF10, PH0, PH1, NRST, PC0, PC1, PC2, PC3, PG15, PB3,

PB4, PB5, PB6, PB7, PB8, PB9, PE0, PE1

–0 NA

Injected current on any other FT and FTf pins -5 NA

Injected current on any other pins –5 +5

1. NA = not applicable.

Electrical characteristics STM32F446xC/E

118/202 DocID027107 Rev 6

6.3.17 I/O port characteristics

General input/output characteristics

Unless otherwise specified, the parameters given in Table 56: I/O static characteristics are

derived from tests performed under the conditions summarized in Table 16. All I/Os are

CMOS and TTL compliant.

Table 56. I/O static characteristics

Symbol Parameter Conditions Min Typ Max Unit

VIL

FT, FTf, TTa and NRST I/O

input low level voltage 1.7 V≤ VDD≤ 3.6 V - -

0.35VDD–0.04(1)

0.3VDD(2)

BOOT0 I/O input low level

voltage

1.75 V ≤ VDD ≤

3.6 V,

– 40 °C≤ TA ≤

105 °C

0.1VDD+0.1(1)

1.7 V ≤ VDD ≤ 3.6 V,

0 °C ≤ TA ≤ 105 °C --

VIH

FT, FTf, TTa and NRST I/O

input high level voltage(4) 1.7 V≤ VDD≤ 3.6 V

0.45VDD+0.3(1)

0.7VDD(2)

BOOT0 I/O input high level

voltage

1.75 V≤ VDD ≤ 3.6 V,

– 40 °C≤ TA ≤ 105 °C

0.17VDD+0.7(1) --

1.7 V≤ VDD ≤ 3.6 V,

0 °C≤ TA ≤ 105 °C

VHYS

FT, FTf, TTa and NRST I/O

input hysteresis 1.7 V≤ VDD≤ 3.6 V - 10%VDD -

BOOT0 I/O input hysteresis

1.75 V≤ VDD ≤ 3.6 V,

–40 °C≤ TA ≤ 105 °C -

100m

1.7 V≤ VDD ≤ 3.6 V,

0 °C≤ TA ≤ 105 °C --

Ilkg

I/O input leakage current (3) VSS ≤ VIN ≤ VDD --±1

µA

I/O FT input leakage current

(4) VIN = 5 V - - 3

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STM32F446xC/E Electrical characteristics

175

All I/Os are CMOS and TTL compliant (no software configuration required). Their

characteristics cover more than the strict CMOS-technology or TTL parameters. The

coverage of these requirements for FT I/Os is shown in Figure 31.

RPU

Weak pull-up

equivalent

resistor(5)

All pins

except for

PA10/PB12

(OTG_FS_ID,

OTG_HS_ID) VIN = VSS

30 40 50

kΩ

PA10/PB12

(OTG_FS_ID,

OTG_HS_ID)

71014

RPD

Weak pull-

down

equivalent

resistor(6)

All pins

except for

PA10/PB12

(OTG_FS_ID,

OTG_HS_ID) VIN = VDD

30 40 50

PA10/PB12

(OTG_FS_ID,

OTG_HS_ID)

71014

CIO(7) I/O pin capacitance - - 5 - pF

1. Guaranteed by design.

2. Tested in production.

3. Leakage could be higher than the maximum value, if negative current is injected on adjacent pins, Refer to Table 55: I/O

current injection susceptibility

4. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled. Leakage could be

higher than the maximum value, if negative current is injected on adjacent pins.Refer to Table 55: I/O current injection

susceptibility

5. Pull-up resistors are designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the

series resistance is minimum (~10% order).

6. Pull-down resistors are designed with a true resistance in series with a switchable NMOS. This NMOS contribution to the

series resistance is minimum (~10% order).

7. Hysteresis voltage between Schmitt trigger switching levels. Guaranteed based on test during characterization.

Table 56. I/O static characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

Electrical characteristics STM32F446xC/E

120/202 DocID027107 Rev 6

Figure 31. FT I/O input characteristics

Output driving current

The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and sink or

source up to ±20 mA (with a relaxed VOL/VOH) except PC13, PC14 and PC15 which can

sink or source up to ±3mA. When using the PC13 to PC15 GPIOs in output mode, the speed

should not exceed 2 MHz with a maximum load of 30 pF.

In the user application, the number of I/O pins which can drive current must be limited to

respect the absolute maximum rating specified in Section 6.2. In particular:

•The sum of the currents sourced by all the I/Os on VDD, plus the maximum Run

consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating

ΣIVDD (see Table 14).

•The sum of the currents sunk by all the I/Os on VSS plus the maximum Run

consumption of the MCU sunk on VSS cannot exceed the absolute maximum rating

ΣIVSS (see Table 14).

Output voltage levels

Unless otherwise specified, the parameters given in Table 57 are derived from tests

performed under ambient temperature and VDD supply voltage conditions summarized in

Table 16. All I/Os are CMOS and TTL compliant.

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DocID027107 Rev 6 121/202

STM32F446xC/E Electrical characteristics

175

Input/output AC characteristics

The definition and values of input/output AC characteristics are given in Figure 32 and

Table 58, respectively.

Unless otherwise specified, the parameters given in Table 58 are derived from tests

performed under the ambient temperature and VDD supply voltage conditions summarized

in Table 16.

Table 57. Output voltage characteristics

Symbol Parameter Conditions Min Max Unit

VOL(1)

1. The IIO current sunk by the device must always respect the absolute maximum rating specified in Table 14.

and the sum of IIO (I/O ports and control pins) must not exceed IVSS.

Output low level voltage for an I/O pin CMOS port(2)

IIO = +8 mA

2.7 V ≤ VDD ≤ 3.6 V

2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.

-0.4

VOH(3)

3. The IIO current sourced by the device must always respect the absolute maximum rating specified in

Table 14 and the sum of IIO (I/O ports and control pins) must not exceed IVDD.

Output high level voltage for an I/O pin VDD–0.4 -

VOL (1) Output low level voltage for an I/O pin TTL port(2)

IIO =+ 8mA

2.7 V ≤ VDD ≤ 3.6 V

-0.4

VOH (3) Output high level voltage for an I/O pin 2.4 -

VOL(1) Output low level voltage for an I/O pin IIO = +20 mA

2.7 V ≤ VDD ≤ 3.6 V

-1.3

(4)

4. Based on characterization data.

VOH(3) Output high level voltage for an I/O pin VDD–1.3(4) -

VOL(1) Output low level voltage for an I/O pin IIO = +6 mA

1.8 V ≤ VDD ≤ 3.6 V

-0.4

(4)

VOH(3) Output high level voltage for an I/O pin VDD–0.4(4) -

VOL(1) Output low level voltage for an I/O pin IIO = +4 mA

1.7 V ≤ VDD ≤ 3.6V

-0.4

(5)

5. Guaranteed by design.

VOH(3) Output high level voltage for an I/O pin VDD–0.4(5) -

Table 58. I/O AC characteristics(1)(2)

OSPEEDR

y[1:0] bit

value(1)

Symbol Parameter Conditions Min Typ Max Unit

fmax(IO)out Maximum frequency(3)

CL = 50 pF, VDD ≥ 2.7 V - - 4

MHz

CL = 50 pF, VDD ≥ 1.7 V - - 2

CL = 10 pF, VDD ≥ 2.7 V - - 8

CL = 10 pF, VDD ≥ 1.8 V - - 4

CL = 10 pF, VDD ≥ 1.7 V - - 3

tf(IO)out/

tr(IO)out

Output high to low level fall

time and output low to high

level rise time

CL = 50 pF, VDD = 1.7 V

to 3.6 V --100ns

Electrical characteristics STM32F446xC/E

122/202 DocID027107 Rev 6

fmax(IO)out Maximum frequency(3)

CL = 50 pF, VDD≥ 2.7 V - - 25

MHz

CL = 50 pF, VDD≥ 1.8 V - - 12.5

CL = 50 pF, VDD≥ 1.7 V - - 10

CL = 10 pF, VDD ≥ 2.7 V - - 50

CL = 10 pF, VDD≥ 1.8 V - - 20

CL = 10 pF, VDD≥ 1.7 V - - 12.5

tf(IO)out/

tr(IO)out

Output high to low level fall

time and output low to high

level rise time

CL = 50 pF, VDD ≥ 2.7 V - - 10

CL = 10 pF, VDD ≥ 2.7 V - - 6

CL = 50 pF, VDD ≥ 1.7 V - - 20

CL = 10 pF, VDD ≥ 1.7 V - - 10

fmax(IO)out Maximum frequency(3)

CL = 40 pF, VDD ≥ 2.7 V - - 50(4)

MHz

CL = 10 pF, VDD ≥ 2.7 V - - 100(4)

CL = 40 pF, VDD ≥ 1.7 V - - 25

CL = 10 pF, VDD ≥ 1.8 V - - 50

CL = 10 pF, VDD ≥ 1.7 V - - 42.5

tf(IO)out/

tr(IO)out

Output high to low level fall

time and output low to high

level rise time

CL = 40 pF, VDD ≥2.7 V - - 6

CL = 10 pF, VDD ≥ 2.7 V - - 4

CL = 40 pF, VDD ≥ 1.7 V - - 10

CL = 10 pF, VDD ≥ 1.7 V - - 6

fmax(IO)out Maximum frequency(3)

CL = 30 pF, VDD ≥ 2.7 V - - 100(4)

MHz

CL = 30 pF, VDD ≥ 1.8 V - - 50

CL = 30 pF, VDD ≥ 1.7 V - - 42.5

CL = 10 pF, VDD≥ 2.7 V - - 180(4)

CL = 10 pF, VDD ≥ 1.8 V - - 100

CL = 10 pF, VDD ≥ 1.7 V - - 72.5

tf(IO)out/

tr(IO)out

Output high to low level fall

time and output low to high

level rise time

CL = 30 pF, VDD ≥ 2.7 V - - 4

CL = 30 pF, VDD ≥1.8 V - - 6

CL = 30 pF, VDD ≥1.7 V - - 7

CL = 10 pF, VDD ≥ 2.7 V - - 2.5

CL = 10 pF, VDD ≥1.8 V - - 3.5

CL = 10 pF, VDD ≥1.7 V - - 4

-t

EXTIpw

Pulse width of external

signals detected by the EXTI

controller

-10--ns

Table 58. I/O AC characteristics(1)(2) (continued)

OSPEEDR

y[1:0] bit

value(1)

Symbol Parameter Conditions Min Typ Max Unit

DocID027107 Rev 6 123/202

STM32F446xC/E Electrical characteristics

175

Figure 32. I/O AC characteristics definition

6.3.18 NRST pin characteristics

The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up

resistor, RPU (see Table 56: I/O static characteristics).

Unless otherwise specified, the parameters given in Table 59 are derived from tests

performed under the ambient temperature and VDD supply voltage conditions summarized

in Table 16.

1. Guaranteed by design.

2. The I/O speed is configured using the OSPEEDRy[1:0] bits. Refer to the STM32F4xx reference manual for a description of

the GPIOx_SPEEDR GPIO port output speed register.

3. The maximum frequency is defined in Figure 32.

4. For maximum frequencies above 50 MHz and VDD > 2.4 V, the compensation cell should be used.

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Table 59. NRST pin characteristics

Symbol Parameter Conditions Min Typ Max Unit

RPU Weak pull-up equivalent resistor(1) VIN = VSS 30 40 50 kΩ

VF(NRST)(2) NRST Input filtered pulse - - - 100 ns

VNF(NRST)(2) NRST Input not filtered pulse VDD > 2.7 V 300 - - ns

TNRST_OUT Generated reset pulse duration Internal Reset source 20 - - µs

1. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series

resistance must be minimum (~10% order).

2. Guaranteed by design.

Electrical characteristics STM32F446xC/E

124/202 DocID027107 Rev 6

Figure 33. Recommended NRST pin protection

1. The reset network protects the device against parasitic resets.

2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in

Table 59. Otherwise the reset is not taken into account by the device.

3. The external capacitor on NRST must be placed as close as possible to the device.

6.3.19 TIM timer characteristics

The parameters given in Table 60 are guaranteed by design.

Refer to Section 6.3.17: I/O port characteristics for details on the input/output alternate

function characteristics (output compare, input capture, external clock, PWM output).

6.3.20 Communications interfaces

I2C interface characteristics

The I2C interface meets the requirements of the standard I2C communication protocol with

the following restrictions: the I/O pins SDA and SCL too are mapped as not “true”

open-drain. When configured as open-drain, the PMOS connected between the I/O pin and

VDD is disabled, but is still present.

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Table 60. TIMx characteristics(1)(2)

Symbol Parameter Conditions(3) Min Max Unit

tres(TIM) Timer resolution time

AHB/APBx prescaler=1 or

2 or 4, fTIMxCLK = 180 MHz 1-t

TIMxCLK

AHB/APBx prescaler>4,

fTIMxCLK = 90 MHz 1-t

TIMxCLK

fEXT

Timer external clock

frequency on CH1 to CH4 fTIMxCLK = 180 MHz

TIMxCLK/2 MHz

ResTIM Timer resolution - 16/32 bit

tMAX_COUNT

Maximum possible count with

32-bit counter - - 65536 × 65536 tTIMxCLK

1. TIMx is used as a general term to refer to the TIM1 to TIM12 timers.

2. Guaranteed by design.

3. The maximum timer frequency on APB1 or APB2 is up to 180 MHz, by setting the TIMPRE bit in the RCC_DCKCFGR

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STM32F446xC/E Electrical characteristics

175

The I2C characteristics are described in Table 61. Refer also to Section 6.3.17: I/O port

characteristics for more details on the input/output alternate function characteristics (SDA

and SCL).

Table 61. I2C characteristics

Symbol Parameter

Standard mode

I2C(1)(2)

1. Guaranteed based on test during characterization.

Fast mode I2C(1)(2)

2. fPCLK1 must be at least 2 MHz to achieve standard mode I2C frequencies. It must be at least 4 MHz to

achieve fast mode I2C frequencies, and a multiple of 10 MHz to reach the 400 kHz maximum I2C fast mode

clock.

Unit

Min Max Min Max

tw(SCLL) SCL clock low time 4.7 - 1.3 -

µs

tw(SCLH) SCL clock high time 4.0 - 0.6 -

tsu(SDA) SDA setup time 250 - 100 -

th(SDA) SDA data hold time - 3450(3)

3. The device must internally provide a hold time of at least 300 ns for the SDA signal in order to bridge the

undefined region of the falling edge of SCL.

-900

(4)

4. The maximum data hold time has only to be met if the interface does not stretch the low period of SCL

signal.

tv(SDA, ACK) Data, ACK valid time - 3.45 - 0.9

tr(SDA)

tr(SCL)

SDA and SCL rise time - 1000 - 300

tf(SDA)

tf(SCL)

SDA and SCL fall time - 300 - 300

th(STA) Start condition hold time 4.0 - 0.6 -

µs

tsu(STA)

Repeated Start condition

setup time 4.7 - 0.6 -

tsu(STO) Stop condition setup time 4.0 - 0.6 - µs

tw(STO:STA)

Stop to Start condition time

(bus free) 4.7 - 1.3 - µs

tSP

Pulse width of the spikes

that are suppressed by the

analog filter for standard and

fast mode

- - 0.05 0.09(5)

5. The minimum width of the spikes filtered by the analog filter is above tSP(max).

µs

Capacitive load for each bus

line - 400 - 400 pF

Electrical characteristics STM32F446xC/E

126/202 DocID027107 Rev 6

Figure 34. I2C bus AC waveforms and measurement circuit

1. RS = series protection resistor.

2. RP = external pull-up resistor.

3. VDD_I2C is the I2C bus power supply.

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DocID027107 Rev 6 127/202

STM32F446xC/E Electrical characteristics

175

FMPI2C characteristics

The FMPI2C characteristics are described in Table 62.

Refer also to Section 6.3.17: I/O port characteristics for more details on the input/output

alternate function characteristics (SDA and SCL).

Table 62. FMPI2C characteristics(1)

-Parameter

Standard mode Fast mode Fast+ mode

Unit

Min Max Min Max Min Max

fFMPI2CC FMPI2CCLK frequency 2 - 8 - 17

16(2) -

tw(SCLL) SCL clock low time 4.7 - 1.3 - 0.5 -

tw(SCLH) SCL clock high time 4.0 - 0.6 - 0.26 -

tsu(SDA) SDA setup time 0.25 - 0.10 - 0.05 -

tH(SDA) SDA data hold time 0 - 0 - 0 -

tv(SDA,ACK) Data, ACK valid time - 3.45 - 0.9 - 0.45

tr(SDA)

tr(SCL)

SDA and SCL rise time - 0.100 - 0.30 - 0.12

tf(SDA)

tf(SCL)

SDA and SCL fall time - 0.30 - 0.30 - 0.12

th(STA) Start condition hold time 4 - 0.6 - 0.26 -

tsu(STA)

Repeated Start condition

setup time 4.7 - 0.6 - 0.26 -

tsu(STO) Stop condition setup time 4 - 0.6 - 0.26 -

tw(STO:STA) Stop to Start condition time

(bus free) 4.7 - 1.3 - 0.5 -

tSP

Pulse width of the spikes that

are suppressed by the

analog filter for standard and

fast mode

- - 0.05 0.09 0.05 0.09

Capacitive load for each bus

Line - 400 - 400 - 550(3) pF

1. Guaranteed based on test during characterization.

2. When tr(SDA,SCL)<=110ns.

3. Can be limited. Maximum supported value can be retrieved by referring to the following formulas:

tr(SDA/SCL) = 0.8473 x Rp x Cload

Rp(min) = (VDD -VOL(max)) / IOL(max)

Electrical characteristics STM32F446xC/E

128/202 DocID027107 Rev 6

Figure 35. FMPI2C timing diagram and measurement circuit

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DocID027107 Rev 6 129/202

STM32F446xC/E Electrical characteristics

175

SPI interface characteristics

Unless otherwise specified, the parameters given in Table 63 for SPI are derived from tests

performed under the ambient temperature, fPCLKx frequency and VDD supply voltage

conditions summarized in Table 16, with the following configuration:

•Output speed is set to OSPEEDRy[1:0] = 10

•Capacitive load C=30pF

•Measurement points are done at CMOS levels: 0.5VDD

Refer to Section 6.3.17: I/O port characteristics for more details on the input/output alternate

function characteristics (NSS, SCK, MOSI, MISO for SPI).

Table 63. SPI dynamic characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fSCK

1/tc(SCK)

SPI clock frequency

Master full duplex/receiver mode,

2.7 V≤VDD≤3.6 V

SPI1/4

MHz

Master transmitter

1.71V <VDD< 3.6V

SPI1/4

Master

1.71V <VDD< 3.6V

SPI1/2/3/4

22.5

Slave transmitter/

full duplex mode

SPI1/4

2.7V <VDD< 3.6V

Slave receiver mode

SPI1/4

1.71V <VDD< 3.6V

Slave mode

SPI1/2/3/4

1.71V <VDD< 3.6V

22.5(2)

Duty(SCK) Duty cycle of SPI clock

frequency Slave mode 30 50 70 %

Electrical characteristics STM32F446xC/E

130/202 DocID027107 Rev 6

Figure 36. SPI timing diagram - slave mode and CPHA = 0

tw(SCKH) SCK high and low time Master mode, SPI presc = 2 TPCLK - 1.5 TPCLK TPCLK + 1.5

tw(SCKL)

tsu(NSS) NSS setup time Slave mode, SPI presc = 2 4TPCLK --

th(NSS) NSS hold time Slave mode, SPI presc = 2 2TPCLK

tsu(MI) Data input setup time

Master mode 4 - -

tsu(SI) Slave mode 3 - -

th(MI) Data input hold time

Master mode 4 - -

th(SI) Slave mode 2 - -

ta(SO) Data output access time Slave mode 7 - 21

tdis(SO) Data output disable time Slave mode 5 - 12

tv(SO)

Data output valid/hold

time

Slave mode (after enable edge),

2.7V ≤ VDD ≤ 3.6V -7.522

Slave mode (after enable edge),

1.7 V ≤ VDD ≤ 3.6 V - 7.5 10.5

th(SO)

Data output valid/hold

time Slave mode (after enable edge) 5 - -

tv(MO) Data output valid time Master mode (after enable edge) - 1.5 5

th(MO) Data output hold time Master mode (after enable edge) 0 - -

1. Guaranteed based on test during characterization.

2. Maximum frequency in Slave transmitter mode is determined by the sum of tv(SO) and tsu(MI) which has to fit into SCK low or

high phase preceding the SCK sampling edge. This value can be achieved when the SPI communicates with a master

having tsu(MI) = 0 while Duty(SCK) = 50%.

Table 63. SPI dynamic characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

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DocID027107 Rev 6 131/202

STM32F446xC/E Electrical characteristics

175

Figure 37. SPI timing diagram - slave mode and CPHA = 1

Figure 38. SPI timing diagram - master mode

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Electrical characteristics STM32F446xC/E

132/202 DocID027107 Rev 6

QSPI interface characteristics

Unless otherwise specified, the parameters given in Table 64 for QSPI are derived from

tests performed under the ambient temperature, fAHB frequency and VDD supply voltage

conditions summarized in Table 16, with the following configuration:

•Output speed is set to OSPEEDRy[1:0] = 11

•Capacitive load C=20pF

•Measurement points are done at CMOS levels: 0.5VDD

Refer to Section 6.3.17: I/O port characteristics for more details on the input/output alternate

function characteristics.

Table 64. QSPI dynamic characteristics in SDR Mode(1)

Symbol Parameter Conditions Min Typ Max Unit

fSCK

1/tc(SCK)

QSPI clock frequency

Write mode

1.71 V≤VDD≤3.6 V

Cload = 15 pF

--90

MHzRead mode

2.7V <VDD< 3.6V

Cload = 15 pF

--90

1.71 V≤VDD≤3.6 V - - 48

tw(CKH) QSPI clock high and low -

(T(CK) / 2) - 2 - T(CK) / 2

tw(CKL) T(CK) / 2 - (T(CK) / 2) +2

ts(IN) Data input setup time - 2 - -

th(IN) Data input hold time - 4.5 - -

tv(OUT) Data output valid time - - 1.5 3

th(OUT) Data output hold time - 0 - -

1. Guaranteed based on test during characterization.

Table 65. QSPI dynamic characteristics in DDR Mode(1)

Symbol Parameter Conditions Min Typ Max Unit

fSCK

1/tc(SCK)

QSPI clock frequency

Write mode

1.71 V≤VDD≤3.6 V

Cload = 15 pF

--60

MHz

Read mode

2.7V <VDD< 3.6V

Cload = 15 pF

1.71 V≤VDD≤3.6 V --

DocID027107 Rev 6 133/202

STM32F446xC/E Electrical characteristics

175

I2S interface characteristics

Unless otherwise specified, the parameters given in Table 66 for the I2S interface are

derived from tests performed under the ambient temperature, fPCLKx frequency and VDD

supply voltage conditions summarized in Table 16, with the following configuration:

•Output speed is set to OSPEEDRy[1:0] = 10

•Capacitive load C = 30 pF

•Measurement points are done at CMOS levels: 0.5VDD

Refer to Section 6.3.17: I/O port characteristics for more details on the input/output alternate

function characteristics (CK, SD, WS).

tw(CKH) QSPI clock high and low -

(T(CK) / 2) - 2 - T(CK) / 2

tw(CKL) T(CK) / 2 - (T(CK) / 2) +2

ts(IN) Data input setup time - 0 - -

th(IN) Data input hold time - 5.5 - -

tv(OUT) Data output valid time

2.7V <VDD< 3.6V - 5.5 6.5

1.71V <VDD< 3.6V - 8 9.5

th(OUT) Data output hold time - 3.5 - -

1. Guaranteed based on test during characterization.

Table 65. QSPI dynamic characteristics in DDR Mode(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

Table 66. I2S dynamic characteristics(1)

Symbol Parameter Conditions Min Max Unit

fMCK I2S Main clock output - 256 x 8K 256 x Fs(2) MHz

fCK I2S clock frequency

Master data - 64 x Fs

MHz

Slave data - 64 x Fs

DCK I2S clock frequency duty cycle Slave receiver 30 70 %

Electrical characteristics STM32F446xC/E

134/202 DocID027107 Rev 6

Note: Refer to the I2S section of RM0390 reference manual for more details on the sampling

frequency (FS).

fMCK, fCK, and DCK values reflect only the digital peripheral behavior. The values of these

parameters might be slightly impacted by the source clock precision. DCK depends mainly

on the value of ODD bit. The digital contribution leads to a minimum value of

(I2SDIV/(2*I2SDIV+ODD) and a maximum value of (I2SDIV+ODD)/(2*I2SDIV+ODD). FS

maximum value is supported for each mode/condition.

tv(WS) WS valid time Master mode - 5.5

th(WS) WS hold time Master mode 1 -

tsu(WS) WS setup time

Slave mode 1 -

- PCM short pulse Slave mode(3) 2-

th(WS) WS hold time

Slave mode 3 -

- PCM short pulse Slave mode(3) 1.5 -

tsu(SD_MR) Data input setup time

Master receiver 3 -

tsu(SD_SR) Slave receiver 2.5 -

th(SD_MR) Data input hold time

Master receiver 4 -

th(SD_SR) Slave receiver 1 -

tv(SD_ST) Data output valid time

Slave transmitter (after enable edge) - 16

tv(SD_MT) Master transmitter (after enable edge) - 4.5

th(SD_ST) Data output hold time

Slave transmitter (after enable edge) 5 -

th(SD_MT) Master transmitter (after enable edge) 1 -

1. Guaranteed based on test during characterization.

2. The maximum value of 256xFs is 45 MHz (APB1 maximum frequency).

3. Measurement done with respect to I2S_CK rising edge.

Table 66. I2S dynamic characteristics(1) (continued)

Symbol Parameter Conditions Min Max Unit

DocID027107 Rev 6 135/202

STM32F446xC/E Electrical characteristics

175

Figure 39. I2S slave timing diagram (Philips protocol)(1)

1. .LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first

byte.

Figure 40. I2S master timing diagram (Philips protocol)(1)

1. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first

byte.

CK Input

CPOL = 0

CPOL = 1

tc(CK)

WS input

SDtransmit

SDreceive

tw(CKH) tw(CKL)

tsu(WS)tv(SD_ST) th(SD_ST)

th(WS)

tsu(SD_SR) th(SD_SR)

MSB receive Bitn receive LSB receive

MSB transmit Bitn transmit LSB transmit

ai14881b

LSB receive(2)

LSB transmit(2)

CK output

CPOL = 0

CPOL = 1

tc(CK)

WS output

SDreceive

SDtransmit

tw(CKH)

tw(CKL)

tsu(SD_MR)

tv(SD_MT) th(SD_MT)

th(WS)

th(SD_MR)

MSB receive Bitn receive LSB receive

MSB transmit Bitn transmit LSB transmit

ai14884b

tf(CK) tr(CK)

tv(WS)

LSB receive

(2)

LSB transmit

(2)

Electrical characteristics STM32F446xC/E

136/202 DocID027107 Rev 6

SAI characteristics

Unless otherwise specified, the parameters given in Table 67 for SAI are derived from tests

performed under the ambient temperature, fPCLKx frequency and VDD supply voltage

conditions summarized in Table 16, with the following configuration:

•Output speed is set to OSPEEDRy[1:0] = 10

•Capacitive load C=30 pF

•Measurement points are performed at CMOS levels: 0.5VDD

Refer to Section 6.3.17: I/O port characteristics for more details on the input/output alternate

function characteristics (SCK,SD,WS).

(3)

Table 67. SAI characteristics(1)

Symbol Parameter Conditions Min Max Unit

fMCK SAI Main clock output - 256 x 8K 256 x Fs MHz

fCK SAI clock frequency(2) Master data: 32 bits - 128 x Fs(3)

MHz

Slave data: 32 bits - 128 x Fs(3)

tv(FS) FS valid time

Master mode

2.7 V ≤ VDD ≤3.6 V -14%

Master mode

1.71 V ≤ VDD ≤3.6 V -17.5

th(FS) FS hold time Master mode 7 -

tsu(FS) FS setup time Slave mode 1 -

th(FS) FS hold time Slave mode 1 -

tsu(SD_A_MR) Data input setup time

Master receiver 1 -

tsu(SD_B_SR) Slave receiver 1 -

th(SD_A_MR) Data input hold time

Master receiver 5 -

th(SD_B_SR) Slave receiver 1 -

tv(SD_B_ST) Data output valid time

Slave trasmitter (after enable edge

2.7 V ≤ VDD ≤3.6 V -9.5

Slave transmitter (after enable edge

1.71 V ≤ VDD ≤3.6 V -16

th(SD_B_ST) Data output hold time Slave transmitter (after enable edge 6 -

tv(SD_B_ST) Data output valid time

Master transmitter (after enable edge

2.7 V ≤ VDD ≤3.6 V -15

Master transmitter (after enable edge

1.71 V ≤ VDD ≤3.6 V -18

th(SD_B_ST) Data output hold time Master transmitter (after enable edge 7 -

1. Guaranteed based on test during characterization.

2. 256xFs maximum corresponds to 45 MHz (APB2 xaximum frequency)

3. With Fs = 192 KHz

DocID027107 Rev 6 137/202

STM32F446xC/E Electrical characteristics

175

Figure 41. SAI master timing waveforms

Figure 42. SAI slave timing waveforms

USB OTG full speed (FS) characteristics

This interface is present in both the USB OTG HS and USB OTG FS controllers.

Table 68. USB OTG full speed startup time

Symbol Parameter Max Unit

tSTARTUP(1)

1. Guaranteed by design.

USB OTG full speed transceiver startup time 1 µs

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Electrical characteristics STM32F446xC/E

138/202 DocID027107 Rev 6

Note: When VBUS sensing feature is enabled, PA9 and PB13 should be left at their default state

(floating input), not as alternate function. A typical 200 µA current consumption of the

sensing block (current to voltage conversion to determine the different sessions) can be

observed on PA9 and PB13 when the feature is enabled.

Figure 43. USB OTG full speed timings: definition of data signal rise and fall time

Table 69. USB OTG full speed DC electrical characteristics

Symbol Parameter Conditions Min.(1)

1. All the voltages are measured from the local ground potential.

Typ. Max.(1) Unit

Input

levels

VDDUSB

USB OTG full speed

transceiver operating

voltage

-3.0

(2)

2. The USB OTG full speed transceiver functionality is ensured down to 2.7 V but not the full USB full speed

electrical characteristics which are degraded in the 2.7-to-3.0 V VDD voltage range.

-3.6V

VDI(3)

3. Guaranteed by design.

Differential input

sensitivity

I(USB_FS_DP/DM,

USB_HS_DP/DM) 0.2 - -

VVCM(3) Differential common mode

range Includes VDI range 0.8 - 2.5

VSE(3) Single ended receiver

threshold -1.3-2.0

Output

levels

VOL Static output level low RL of 1.5 kΩ to 3.6 V(4)

4. RL is the load connected on the USB OTG full speed drivers.

--0.3

VOH Static output level high RL of 15 kΩ to VSS(4) 2.8 - 3.6

RPD

PA11, PA12, PB14, PB15

(USB_FS_DP/DM,

USB_HS_DP/DM)

VIN = VDDUSB

17 21 24

kΩ

PA9, PB13

(OTG_FS_VBUS,

OTG_HS_VBUS)

0.65 1.1 2.0

RPU

PA12, PB15

(USB_FS_DP,

USB_HS_DP)

VIN = VSS 1.5 1.8 2.1

PA9, PB13

(OTG_FS_VBUS,

OTG_HS_VBUS)

VIN = VSS 0.25 0.37 0.55

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DocID027107 Rev 6 139/202

STM32F446xC/E Electrical characteristics

175

USB high speed (HS) characteristics

Unless otherwise specified, the parameters given in Table 73 for ULPI are derived from

tests performed under the ambient temperature, fHCLK frequency summarized in Table 72

and VDD supply voltage conditions summarized in Table 71, with the following configuration:

•Output speed is set to OSPEEDRy[1:0] = 10, unless otherwise specified

•Capacitive load C = 30 pF, unless otherwise specified

•Measurement points are done at CMOS levels: 0.5VDD.

Refer to Section 6.3.17: I/O port characteristics for more details on the input/output

characteristics.

Table 70. USB OTG full speed electrical characteristics(1)

1. Guaranteed by design.

Driver characteristics

Symbol Parameter Conditions Min Max Unit

trRise time(2)

2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB

Specification - Chapter 7 (version 2.0).

CL = 50 pF 420ns

tfFall time(2) CL = 50 pF 4 20 ns

trfm Rise/ fall time matching tr/tf90 110 %

VCRS Output signal crossover voltage - 1.3 2.0 V

ZDRV Output driver impedance(3)

3. No external termination series resistors are required on DP (D+) and DM (D-) pins since the matching

impedance is included in the embedded driver.

Driving high or

low 28 44 Ω

Table 71. USB HS DC electrical characteristics

Symbol Parameter Min.(1)

1. All the voltages are measured from the local ground potential.

Max.(1) Unit

Input level VDD USB OTG HS operating voltage 1.7 3.6 V

Table 72. USB HS clock timing parameters(1)

Symbol Parameter Min Typ Max Unit

-fHCLK value to guarantee proper operation of

USB HS interface 30 - - MHz

FSTART_8BIT Frequency (first transition) 8-bit ±10% 54 60 66 MHz

FSTEADY Frequency (steady state) ±500 ppm 59.97 60 60.03 MHz

DSTART_8BIT Duty cycle (first transition) 8-bit ±10% 40 50 60 %

DSTEADY Duty cycle (steady state) ±500 ppm 49.975 50 50.025 %

tSTEADY

Time to reach the steady state frequency and

duty cycle after the first transition --1.4ms

Electrical characteristics STM32F446xC/E

140/202 DocID027107 Rev 6

Figure 44. ULPI timing diagram

CAN (controller area network) interface

Refer to Section 6.3.17: I/O port characteristics for more details on the input/output alternate

function characteristics (CANx_TX and CANx_RX).

tSTART_DEV Clock startup time after the

de-assertion of SuspendM

Peripheral - - 5.6

tSTART_HOST Host - - -

tPREP

PHY preparation time after the first transition

of the input clock ---µs

1. Guaranteed by design.

Table 72. USB HS clock timing parameters(1) (continued)

Symbol Parameter Min Typ Max Unit

#LOCK

#ONTROL)N

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5,0)?.84

DATA)N

BIT

#ONTROLOUT

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DATAOUT

BIT

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T($

T3$

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T3#

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T$#

Table 73. Dynamic characteristics: USB ULPI(1)

Symbol Parameter Conditions Min. Typ. Max. Unit

tSC Control in (ULPI_DIR, ULPI_NXT) setup time - 1 - -

tHC Control in (ULPI_DIR, ULPI_NXT) hold time - 1.5 - -

tSD Data in setup time - 1.5 - -

tHD Data in hold time - 1.5 - -

tDC/tDD Data/control output delay

2.7 V < VDD < 3.6 V,

CL = 20 pF -68.5

1.71 V < VDD < 3.6 V,

CL = 15 pF -611.5

1. Guaranteed based on test during characterization.

DocID027107 Rev 6 141/202

STM32F446xC/E Electrical characteristics

175

6.3.21 12-bit ADC characteristics

Unless otherwise specified, the parameters given in Table 74 are derived from tests

performed under the ambient temperature, fPCLK2 frequency and VDDA supply voltage

conditions summarized in Table 16.

Table 74. ADC characteristics

Symbol Parameter Conditions Min Typ Max Unit

VDDA Power supply

VDDA − VREF+ < 1.2 V

1.7(1) -3.6

VVREF+ Positive reference voltage 1.7(1) -V

DDA

VREF- Negative reference voltage - - 0 -

fADC ADC clock frequency

VDDA = 1.7(1) to 2.4 V 0.6 15 18 MHz

VDDA = 2.4 to 3.6 V 0.6 30 36 MHz

fTRIG(2) External trigger frequency

fADC = 30 MHz,

12-bit resolution - - 1764 kHz

---171/f

ADC

VAIN Conversion voltage range(3) -0 (VSSA or VREF-

tied to ground) -V

REF+ V

RAIN(2) External input impedance See Equation 1 for

details --50κΩ

RADC(2)(4) Sampling switch resistance - - - 6 κΩ

CADC(2) Internal sample and hold

capacitor --47pF

tlat(2) Injection trigger conversion

latency

fADC = 30 MHz - - 0.100 µs

---3

(5) 1/fADC

tlatr(2) Regular trigger conversion

latency

fADC = 30 MHz - - 0.067 µs

---2

(5) 1/fADC

tS(2) Sampling time

fADC = 30 MHz 0.100 - 16 µs

- 3 - 480 1/fADC

tSTAB(2) Power-up time - - 2 3 µs

tCONV(2) Total conversion time (including

sampling time)

fADC = 30 MHz

12-bit resolution 0.50 - 16.40 µs

fADC = 30 MHz

10-bit resolution 0.43 - 16.34 µs

fADC = 30 MHz

8-bit resolution 0.37 - 16.27 µs

fADC = 30 MHz

6-bit resolution 0.30 - 16.20 µs

9 to 492 (tS for sampling +n-bit resolution for successive

approximation) 1/fADC

Electrical characteristics STM32F446xC/E

142/202 DocID027107 Rev 6

Equation 1: RAIN max formula

The formula above (Equation 1) is used to determine the maximum external impedance

allowed for an error below 1/4 of LSB. N = 12 (from 12-bit resolution) and k is the number of

sampling periods defined in the ADC_SMPR1 register.

fS(2)

Sampling rate

(fADC = 30 MHz, and

tS = 3 ADC cycles)

12-bit resolution

Single ADC - - 2 Msps

12-bit resolution

Interleave Dual ADC

mode

- - 3.75 Msps

12-bit resolution

Interleave Triple ADC

mode

- - 6 Msps

IVREF+(2)

ADC VREF DC current

consumption in conversion

mode

- - 300 500 µA

IVDDA(2)

ADC VDDA DC current

consumption in conversion

mode

--1.61.8mA

1. VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 3.16.2:

Internal reset OFF).

2. Guaranteed based on test during characterization.

3. VREF+ is internally connected to VDDA and VREF- is internally connected to VSSA.

4. RADC maximum value is given for VDD=1.7 V, and minimum value for VDD=3.3 V.

5. For external triggers, a delay of 1/fPCLK2 must be added to the latency specified in Table 74.

Table 74. ADC characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

Table 75. ADC static accuracy at fADC = 18 MHz(1)

1. Better performance could be achieved in restricted VDD, frequency and temperature ranges.

Symbol Parameter Test conditions Typ Max(2)

2. Guaranteed based on test during characterization.

Unit

ET Total unadjusted error

fADC =18 MHz

VDDA = 1.7 to 3.6 V

VREF = 1.7 to 3.6 V

VDDA − VREF < 1.2 V

±3 ±4

LSB

EO Offset error ±2 ±3

EG Gain error ±1 ±3

ED Differential linearity error ±1 ±2

EL Integral linearity error ±2 ±3

RAIN

k0.5–()

fADC CADC 2N2+

()ln××

---------------------------------------------------------------- RADC

–=

DocID027107 Rev 6 143/202

STM32F446xC/E Electrical characteristics

175

Note: ADC accuracy vs. negative injection current: injecting a negative current on any analog

input pins should be avoided as this significantly reduces the accuracy of the conversion

Table 76. ADC static accuracy at fADC = 30 MHz(1)

1. Better performance could be achieved in restricted VDD, frequency and temperature ranges.

Symbol Parameter Test conditions Typ Max(2)

2. Guaranteed based on test during characterization.

Unit

ET Total unadjusted error

fADC = 30 MHz,

RAIN < 10 kΩ,

VDDA = 2.4 to 3.6 V,

VREF = 1.7 to 3.6 V,

VDDA − VREF < 1.2 V

±2 ±5

LSB

EO Offset error ±1.5 ±2.5

EG Gain error ±1.5 ±3

ED Differential linearity error ±1 ±2

EL Integral linearity error ±1.5 ±3

Table 77. ADC static accuracy at fADC = 36 MHz(1)

1. Better performance could be achieved in restricted VDD, frequency and temperature ranges.

Symbol Parameter Test conditions Typ Max(2)

2. Guaranteed based on test during characterization.

Unit

ET Total unadjusted error

fADC =36 MHz,

VDDA = 2.4 to 3.6 V,

VREF = 1.7 to 3.6 V

VDDA − VREF < 1.2 V

±4 ±7

LSB

EO Offset error ±2 ±3

EG Gain error ±3 ±6

ED Differential linearity error ±2 ±3

EL Integral linearity error ±3 ±6

Table 78. ADC dynamic accuracy at fADC = 18 MHz - limited test conditions(1)

Symbol Parameter Test conditions Min Typ Max Unit

ENOB Effective number of bits fADC =18 MHz

VDDA = VREF+= 1.7 V

Input Frequency = 20 KHz

Temperature = 25 °C

10.3 10.4 - bits

SINAD Signal-to-noise and distortion ratio 64 64.2 -

dBSNR Signal-to-noise ratio 64 65 -

THD Total harmonic distortion -67 -72 -

1. Guaranteed based on test during characterization.

Table 79. ADC dynamic accuracy at fADC = 36 MHz - limited test conditions(1)

Symbol Parameter Test conditions Min Typ Max Unit

ENOB Effective number of bits fADC =36 MHz

VDDA = VREF+ = 3.3 V

Input Frequency = 20 KHz

Temperature = 25 °C

10.6 10.8 - bits

SINAD Signal-to noise and distortion ratio 66 67 -

dBSNR Signal-to noise ratio 64 68 -

THD Total harmonic distortion - 70 - 72 -

1. Guaranteed based on test during characterization.

Electrical characteristics STM32F446xC/E

144/202 DocID027107 Rev 6

being performed on another analog input. It is recommended to add a Schottky diode (pin to

ground) to analog pins which may potentially inject negative currents.

Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in

Section 6.3.17 does not affect the ADC accuracy.

Figure 45. ADC accuracy characteristics

1. See also Table 76.

2. Example of an actual transfer curve.

3. Ideal transfer curve.

4. End point correlation line.

5. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.

EO = Offset Error: deviation between the first actual transition and the first ideal one.

EG = Gain Error: deviation between the last ideal transition and the last actual one.

ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.

EL = Integral Linearity Error: maximum deviation between any actual transition and the end point

correlation line.

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STM32F446xC/E Electrical characteristics

175

Figure 46. Typical connection diagram using the ADC

1. Refer to Table 74 for the values of RAIN, RADC and CADC.

2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the

pad capacitance (roughly 5 pF). A high Cparasitic value downgrades conversion accuracy. To remedy this,

fADC should be reduced.

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Electrical characteristics STM32F446xC/E

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General PCB design guidelines

Power supply decoupling should be performed as shown in Figure 47 or Figure 48,

depending on whether VREF+ is connected to VDDA or not. The 10 nF capacitors should be

ceramic (good quality). They should be placed them as close as possible to the chip.

Figure 47. Power supply and reference decoupling (VREF+ not connected to VDDA)

1. VREF+ and VREF– inputs are both available on UFBGA144. VREF+ is also available on LQFP100, LQFP144,

and WLCSP81. When VREF+ and VREF– are not available, they are internally connected to VDDA and VSSA.

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STM32F446xC/E Electrical characteristics

175

Figure 48. Power supply and reference decoupling (VREF+ connected to VDDA)

1. VREF+ and VREF– inputs are both available on UFBGA144. VREF+ is also available on LQFP100, LQFP144,

and WLCSP81. When VREF+ and VREF– are not available, they are internally connected to VDDA and VSSA.

6.3.22 Temperature sensor characteristics

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Table 80. Temperature sensor characteristics

Symbol Parameter Min Typ Max Unit

TL(1) VSENSE linearity with temperature - ±1±2°C

Avg_Slope(1) Average slope - 2.5 - mV/°C

V25(1) Voltage at 25 °C - 0.76 - V

tSTART(2) Startup time - 6 10 µs

TS_temp(2) ADC sampling time when reading the temperature (1 °C accuracy) 10 - - µs

1. Guaranteed based on test during characterization.

2. Guaranteed by design.

Table 81. Temperature sensor calibration values

Symbol Parameter Memory address

TS_CAL1 TS ADC raw data acquired at temperature of 30 °C, VDDA= 3.3 V 0x1FFF 7A2C - 0x1FFF 7A2D

TS_CAL2 TS ADC raw data acquired at temperature of 110 °C, VDDA= 3.3 V 0x1FFF 7A2E - 0x1FFF 7A2F

Electrical characteristics STM32F446xC/E

148/202 DocID027107 Rev 6

6.3.23 VBAT monitoring characteristics

6.3.24 Reference voltage

The parameters given in Table 83 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 16.

6.3.25 DAC electrical characteristics

Table 82. VBAT monitoring characteristics

Symbol Parameter Min Typ Max Unit

R Resistor bridge for VBAT -50-KΩ

Q Ratio on VBAT measurement - 4 - -

Er(1) Error on Q - 1 - + 1 %

TS_vbat(2)(2) ADC sampling time when reading the VBAT

1 mV accuracy 5--µs

1. Guaranteed by design.

2. Shortest sampling time can be determined in the application by multiple iterations.

Table 83. internal reference voltage

Symbol Parameter Conditions Min Typ Max Unit

VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.18 1.21 1.24 V

TS_vrefint(1) ADC sampling time when reading the

internal reference voltage -10--µs

VRERINT_s(2) Internal reference voltage spread over the

temperature range VDD = 3V ± 10mV - 3 5 mV

TCoeff(2) Temperature coefficient - - 30 50 ppm/°C

tSTART(2) Startup time - - 6 10 µs

1. Shortest sampling time can be determined in the application by multiple iterations.

2. Guaranteed by design.

Table 84. Internal reference voltage calibration values

Symbol Parameter Memory address

VREFIN_CAL Raw data acquired at temperature of 30 °C VDDA = 3.3 V 0x1FFF 7A2A - 0x1FFF 7A2B

Table 85. DAC characteristics

Symbol Parameter Conditions Min Typ Max Unit Comments

VDDA

Analog supply

voltage -1.7

(1) -3.6 V -

VREF+

Reference supply

voltage -1.7

(1) -3.6VV

REF+ ≤ VDDA

DocID027107 Rev 6 149/202

STM32F446xC/E Electrical characteristics

175

VSSA Ground - 0 - 0 V -

RLOAD(2) Resistive load

DAC

output

buffer ON

Connected

to VSSA

5- -

kΩ

Connected

to VDDA 25 - - -

RO(2) Impedance output

with buffer OFF ---15kΩ

When the buffer is OFF, the

Minimum resistive load

between DAC_OUT and VSS

to have a 1% accuracy is

1.5 MΩ

CLOAD(2) Capacitive load - - - 50 pF

Maximum capacitive load at

DAC_OUT pin (when the

buffer is ON).

DAC_OUT

min(2)

Lower DAC_OUT

voltage with buffer

-0.2 --V

It gives the maximum output

excursion of the DAC.

It corresponds to 12-bit input

code (0x0E0) to (0xF1C) at

VREF+ = 3.6 V and (0x1C7) to

(0xE38) at VREF+ = 1.7 V

DAC_OUT

max(2)

Higher DAC_OUT

voltage with buffer

---

VDDA

– 0.2 V

DAC_OUT

min(2)

Lower DAC_OUT

voltage with buffer

OFF

--0.5-mV

It gives the maximum output

excursion of the DAC.

DAC_OUT

max(2)

Higher DAC_OUT

voltage with buffer

OFF

---

VREF

+ –

1LSB

IVREF+(4)

DAC DC VREF

current

consumption in

quiescent mode

(Standby mode)

- - 170 240

µA

With no load, worst code

(0x800) at VREF+ = 3.6 V in

terms of DC consumption on

the inputs

--5075

With no load, worst code

(0xF1C) at VREF+ = 3.6 V in

terms of DC consumption on

the inputs

IDDA(4)

DAC DC VDDA

current

consumption in

quiescent mode(3)

- - 280 380 µA With no load, middle code

(0x800) on the inputs

- - 475 625 µA

With no load, worst code

(0xF1C) at VREF+ = 3.6 V in

terms of DC consumption on

the inputs

DNL(4)

Differential non

linearity Difference

between two

consecutive code-

1LSB)

- - - ±0.5 LSB Given for the DAC in 10-bit

configuration.

---±2 LSB

Given for the DAC in 12-bit

configuration.

Table 85. DAC characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit Comments

Electrical characteristics STM32F446xC/E

150/202 DocID027107 Rev 6

INL(4)

Integral non

linearity (difference

between

measured value at

Code i and the

value at Code i on

a line drawn

between Code 0

and last Code

1023)

---±1LSB

Given for the DAC in 10-bit

configuration.

---±4LSB

Given for the DAC in 12-bit

configuration.

Offset(4)

Offset error

(difference

between

measured value at

Code (0x800) and

the ideal value =

VREF+/2)

---±10mV

Given for the DAC in 12-bit

configuration

---±3LSB

Given for the DAC in 10-bit at

VREF+ = 3.6 V

- - - ±12 LSB Given for the DAC in 12-bit at

VREF+ = 3.6 V

Gain

error(4) Gain error - - - ±0.5 % Given for the DAC in 12-bit

configuration

tSETTLING(4

)

Total Harmonic

Distortion

Buffer ON

--36µs

CLOAD ≤ 50 pF,

RLOAD ≥ 5 kΩ

THD(4) -----dB

CLOAD ≤ 50 pF,

RLOAD ≥ 5 kΩ

Update

rate(2)

Max frequency for

a correct

DAC_OUT change

when small

variation in the

input code (from

code i to i+1LSB)

---1

MS/

CLOAD ≤ 50 pF,

RLOAD ≥ 5 kΩ

tWAKEUP(4)

Wakeup time from

off state (Setting

the ENx bit in the

DAC Control

--6.510µs

CLOAD ≤ 50 pF, RLOAD ≥ 5 kΩ

input code between lowest

and highest possible ones.

PSRR+ (2)

Power supply

rejection ratio (to

VDDA) (static DC

measurement)

- - - 67 - 40 dB No RLOAD, CLOAD = 50 pF

1. VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 3.16.2:

Internal reset OFF).

2. Guaranteed by design.

3. The quiescent mode corresponds to a state where the DAC maintains a stable output level to ensure that no dynamic

consumption occurs.

4. Guaranteed based on test during characterization.

Table 85. DAC characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit Comments

DocID027107 Rev 6 151/202

STM32F446xC/E Electrical characteristics

175

Figure 49. 12-bit buffered/non-buffered DAC

1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external

loads directly without the use of an external operational amplifier. The buffer can be bypassed by

configuring the BOFFx bit in the DAC_CR register.

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Electrical characteristics STM32F446xC/E

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6.3.26 FMC characteristics

Unless otherwise specified, the parameters given in Table 86 to Table 93 for the FMC

interface are derived from tests performed under the ambient temperature, fHCLK frequency

and VDD supply voltage conditions summarized in Table 15, with the following configuration:

•Output speed is set to OSPEEDRy[1:0] = 10

•Capacitance load C = 30 pF

•Measurement points are done at CMOS levels: 0.5VDD

Refer to Section 6.3.17: I/O port characteristics for more details on the input/output

characteristics.

Asynchronous waveforms and timings

Figure 50 through Figure 53 represent asynchronous waveforms and Table 86 through

Table 93 provide the corresponding timings. The results shown in these tables are obtained

with the following FMC configuration:

•AddressSetupTime = 0x1

•AddressHoldTime = 0x1

•DataSetupTime = 0x1 (except for asynchronous NWAIT mode , DataSetupTime = 0x5)

•BusTurnAroundDuration = 0x0

In all timing tables, the THCLK is the HCLK clock period.

DocID027107 Rev 6 153/202

STM32F446xC/E Electrical characteristics

175

Figure 50. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms

1. Mode 2/B, C and D only. In Mode 1, FMC_NADV is not used.

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Table 86. Asynchronous non-multiplexed SRAM/PSRAM/NOR -

read timings(1)(2)

1. CL = 30 pF.

2. Guaranteed based on test during characterization.

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 2THCLK – 2 2 THCLK + 0.5

tv(NOE_NE) FMC_NEx low to FMC_NOE low 0 1

tw(NOE) FMC_NOE low time 2THCLK - 1 2THCLK + 0.5

th(NE_NOE) FMC_NOE high to FMC_NE high hold time 0 -

tv(A_NE) FMC_NEx low to FMC_A valid - 0.5

th(A_NOE) Address hold time after FMC_NOE high 0 -

tv(BL_NE) FMC_NEx low to FMC_BL valid - 2

th(BL_NOE) FMC_BL hold time after FMC_NOE high 0 -

tsu(Data_NE) Data to FMC_NEx high setup time THCLK - 2 -

tsu(Data_NOE) Data to FMC_NOEx high setup time THCLK - 2 -

th(Data_NOE) Data hold time after FMC_NOE high 0 -

th(Data_NE) Data hold time after FMC_NEx high 0 -

tv(NADV_NE) FMC_NEx low to FMC_NADV low - 0

tw(NADV) FMC_NADV low time - THCLK +1

Table 87. Asynchronous non-multiplexed SRAM/PSRAM/NOR read -

NWAIT timings(1)(2)

1. CL = 30 pF.

2. Guaranteed based on test during characterization.

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 7THCLK + 1 7THCLK

tw(NOE) FMC_NWE low time 5THCLK – 1 5THCLK + 1

tw(NWAIT) FMC_NWAIT low time THCLK – 0.5 -

tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 5THCLK+ 1.5 -

th(NE_NWAIT)

FMC_NEx hold time after FMC_NWAIT

invalid 4THCLK + 1 -

DocID027107 Rev 6 155/202

STM32F446xC/E Electrical characteristics

175

Figure 51. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms

1. Mode 2/B, C and D only. In Mode 1, FMC_NADV is not used.

Table 88. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)(2)

1. CL = 30 pF.

2. Guaranteed based on test during characterization.

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 3 THCLK - 2 3 THCLK +0.5

tv(NWE_NE) FMC_NEx low to FMC_NWE low THCLK – 0.5 THCLK + 0.5

tw(NWE) FMC_NWE low time THCLK THCLK+ 0.5

th(NE_NWE) FMC_NWE high to FMC_NE high hold time THCLK + 0.5 -

tv(A_NE) FMC_NEx low to FMC_A valid - 0

th(A_NWE) Address hold time after FMC_NWE high THCLK - 0.5 -

tv(BL_NE) FMC_NEx low to FMC_BL valid - 1

th(BL_NWE) FMC_BL hold time after FMC_NWE high THCLK + 0.5 -

tv(Data_NE) Data to FMC_NEx low to Data valid - THCLK + 2

th(Data_NWE) Data hold time after FMC_NWE high THCLK + 0.5 -

tv(NADV_NE) FMC_NEx low to FMC_NADV low - 0

tw(NADV) FMC_NADV low time - THCLK+ 0.5

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Figure 52. Asynchronous multiplexed PSRAM/NOR read waveforms

Table 89. Asynchronous non-multiplexed SRAM/PSRAM/NOR write -

NWAIT timings(1)(2)

1. CL = 30 pF.

2. Guaranteed based on test during characterization.

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 8THCLK - 0.5 8THCLK + 1

tw(NWE) FMC_NWE low time 6THCLK - 0.5 6THCLK + 1

tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 6THCLK - 0.5 -

th(NE_NWAIT)

FMC_NEx hold time after FMC_NWAIT

invalid 4THCLK + 2 -

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DocID027107 Rev 6 157/202

STM32F446xC/E Electrical characteristics

175

Table 90. Asynchronous multiplexed PSRAM/NOR read timings(1)(2)

1. CL = 30 pF.

2. Guaranteed based on test during characterization.

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 3THCLK – 2 3THCLK+0.5

tv(NOE_NE) FMC_NEx low to FMC_NOE low 2THCLK – 0.5 2THCLK

ttw(NOE) FMC_NOE low time THCLK – 1 THCLK + 0.5

th(NE_NOE) FMC_NOE high to FMC_NE high hold time 0 -

tv(A_NE) FMC_NEx low to FMC_A valid - 2

tv(NADV_NE) FMC_NEx low to FMC_NADV low 0 2

tw(NADV) FMC_NADV low time THCLK – 0.5 THCLK + 0.5

th(AD_NADV)

FMC_AD(address) valid hold time after

FMC_NADV high) 0 -

th(A_NOE) Address hold time after FMC_NOE high THCLK – 0.5 -

th(BL_NOE) FMC_BL time after FMC_NOE high 0 -

tv(BL_NE) FMC_NEx low to FMC_BL valid - 2

tsu(Data_NE) Data to FMC_NEx high setup time THCLK + 1.5 -

tsu(Data_NOE) Data to FMC_NOE high setup time THCLK + 1 -

th(Data_NE) Data hold time after FMC_NEx high 0 -

th(Data_NOE) Data hold time after FMC_NOE high 0 -

Table 91. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings(1)(2)

1. CL = 30 pF.

2. Guaranteed based on test during characterization.

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 8THCLK - 1 8THCLK + 2

tw(NOE) FMC_NWE low time 5THCLK – 1 5THCLK + 1

tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 5THCLK + 1.5 -

th(NE_NWAIT)

FMC_NEx hold time after FMC_NWAIT

invalid 4THCLK + 1 -

Electrical characteristics STM32F446xC/E

158/202 DocID027107 Rev 6

Figure 53. Asynchronous multiplexed PSRAM/NOR write waveforms

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DocID027107 Rev 6 159/202

STM32F446xC/E Electrical characteristics

175

Synchronous waveforms and timings

Figure 54 through Figure 57 represent synchronous waveforms and Table 94 through

Table 97 provide the corresponding timings. The results shown in these tables are obtained

with the following FMC configuration:

•BurstAccessMode = FMC_BurstAccessMode_Enable;

•MemoryType = FMC_MemoryType_CRAM;

•WriteBurst = FMC_WriteBurst_Enable;

•CLKDivision = 1; (0 is not supported, see the STM32F446 reference manual: RM0390)

•DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM

Table 92. Asynchronous multiplexed PSRAM/NOR write timings(1)(2)

1. CL = 30 pF.

2. Guaranteed based on test during characterization.

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 4THCLK - 2 4THCLK+0.5

tv(NWE_NE) FMC_NEx low to FMC_NWE low THCLK THCLK + 0.5

tw(NWE) FMC_NWE low time 2THCLK 2THCLK + 0.5

th(NE_NWE) FMC_NWE high to FMC_NE high hold time THCLK -

tv(A_NE) FMC_NEx low to FMC_A valid - 0

tv(NADV_NE) FMC_NEx low to FMC_NADV low 0.5 1

tw(NADV) FMC_NADV low time THCLK – 0.5 THCLK+ 0.5

th(AD_NADV)

FMC_AD(adress) valid hold time after

FMC_NADV high) THCLK – 2 -

th(A_NWE) Address hold time after FMC_NWE high THCLK -

th(BL_NWE) FMC_BL hold time after FMC_NWE high THCLK–2 -

tv(BL_NE) FMC_NEx low to FMC_BL valid - 2

tv(Data_NADV) FMC_NADV high to Data valid - THCLK + 1.5

th(Data_NWE) Data hold time after FMC_NWE high THCLK + 0.5 -

Table 93. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings(1)(2)

1. CL = 30 pF.

2. Guaranteed based on test during characterization.

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 9THCLK 9THCLK + 0.5

tw(NWE) FMC_NWE low time 7THCLK 7THCLK + 2

tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 6THCLK + 1.5 -

th(NE_NWAIT)

FMC_NEx hold time after FMC_NWAIT

invalid 4THCLK – 1 -

Electrical characteristics STM32F446xC/E

160/202 DocID027107 Rev 6

In all timing tables, the THCLK is the HCLK clock period (with maximum

FMC_CLK = 90 MHz).

Figure 54. Synchronous multiplexed NOR/PSRAM read timings

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DocID027107 Rev 6 161/202

STM32F446xC/E Electrical characteristics

175

Table 94. Synchronous multiplexed NOR/PSRAM read timings(1)(2)

1. CL = 30 pF.

2. Guaranteed based on test during characterization.

Symbol Parameter Min Max Unit

tw(CLK) FMC_CLK period 2THCLK -

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 2.5

td(CLKH_NExH) FMC_CLK high to FMC_NEx high (x= 0…2) THCLK - 0.5 -

td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 0

td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 -

td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 2.5

td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) THCLK -

td(CLKL-NOEL) FMC_CLK low to FMC_NOE low - 2

td(CLKH-NOEH) FMC_CLK high to FMC_NOE high THCLK – 0.5 -

td(CLKL-ADV) FMC_CLK low to FMC_AD[15:0] valid - 0.5

td(CLKL-ADIV) FMC_CLK low to FMC_AD[15:0] invalid 0 -

tsu(ADV-CLKH)

FMC_A/D[15:0] valid data before FMC_CLK

high 1 -

th(CLKH-ADV) FMC_A/D[15:0] valid data after FMC_CLK high 3.5 -

tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 1 -

th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 3.5 -

Electrical characteristics STM32F446xC/E

162/202 DocID027107 Rev 6

Figure 55. Synchronous multiplexed PSRAM write timings

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DocID027107 Rev 6 163/202

STM32F446xC/E Electrical characteristics

175

Table 95. Synchronous multiplexed PSRAM write timings(1)(2)

1. CL = 30 pF.

2. Guaranteed based on test during characterization.

Symbol Parameter Min Max Unit

tw(CLK) FMC_CLK period, VDD range= 2.7 to 3.6 V 2THCLK - 1 -

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 2.5

td(CLKH-NExH) FMC_CLK high to FMC_NEx high (x= 0…2) THCLK + 0.5 -

td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 2

td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 -

td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 2

td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) THCLK -

td(CLKL-NWEL) FMC_CLK low to FMC_NWE low - 0

t(CLKH-NWEH) FMC_CLK high to FMC_NWE high THCLK - 0.5 -

td(CLKL-ADV) FMC_CLK low to FMC_AD[15:0] valid - 3

td(CLKL-ADIV) FMC_CLK low to FMC_AD[15:0] invalid 0 -

td(CLKL-DATA) FMC_A/D[15:0] valid data after FMC_CLK low - 3

td(CLKL-NBLL) FMC_CLK low to FMC_NBL low 0 -

td(CLKH-NBLH) FMC_CLK high to FMC_NBL high THCLK - 0.5 -

tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 4 -

th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 0 -

Electrical characteristics STM32F446xC/E

164/202 DocID027107 Rev 6

Figure 56. Synchronous non-multiplexed NOR/PSRAM read timings

Table 96. Synchronous non-multiplexed NOR/PSRAM read timings(1)(2)

Symbol Parameter Min Max Unit

tw(CLK) FMC_CLK period 2THCLK -

t(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 2.5

td(CLKH-NExH) FMC_CLK high to FMC_NEx high (x= 0…2) THCLK – 0.5 -

td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 0

td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 -

td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 2.5

td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) THCLK -

td(CLKL-NOEL) FMC_CLK low to FMC_NOE low - 2

td(CLKH-NOEH) FMC_CLK high to FMC_NOE high THCLK – 0.5 -

tsu(DV-CLKH) FMC_D[15:0] valid data before FMC_CLK high 1 -

th(CLKH-DV) FMC_D[15:0] valid data after FMC_CLK high 3.5 -

tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 1 -

th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 3.5 -

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DocID027107 Rev 6 165/202

STM32F446xC/E Electrical characteristics

175

Figure 57. Synchronous non-multiplexed PSRAM write timings

1. CL = 30 pF.

2. Guaranteed based on test during characterization.

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Electrical characteristics STM32F446xC/E

166/202 DocID027107 Rev 6

NAND controller waveforms and timings

Figure 58 through Figure 61 represent synchronous waveforms, and Table 98 and Table 99

provide the corresponding timings. The results shown in this table are obtained with the

following FMC configuration:

•COM.FSMC_SetupTime = 0x01;

•COM.FMC_WaitSetupTime = 0x03;

•COM.FMC_HoldSetupTime = 0x02;

•COM.FMC_HiZSetupTime = 0x01;

•ATT.FMC_SetupTime = 0x01;

•ATT.FMC_WaitSetupTime = 0x03;

•ATT.FMC_HoldSetupTime = 0x02;

•ATT.FMC_HiZSetupTime = 0x01;

•Bank = FMC_Bank_NAND;

•MemoryDataWidth = FMC_MemoryDataWidth_16b;

•ECC = FMC_ECC_Enable;

•ECCPageSize = FMC_ECCPageSize_512Bytes;

•TCLRSetupTime = 0;

•TARSetupTime = 0.

In all timing tables, the THCLK is the HCLK clock period.

Table 97. Synchronous non-multiplexed PSRAM write timings(1)(2)

1. CL = 30 pF.

2. Guaranteed based on test during characterization.

Symbol Parameter Min Max Unit

tw(CLK) FMC_CLK period 2THCLK – 1 -

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 2.5

td(CLKH-NExH) FMC_CLK high to FMC_NEx high (x= 0…2) THCLK – 0.5 -

td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 2

td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 -

td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 2

td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) 0 -

td(CLKL-NWEL) FMC_CLK low to FMC_NWE low - 3

td(CLKH-NWEH) FMC_CLK high to FMC_NWE high THCLK + 1 -

td(CLKL-Data) FMC_D[15:0] valid data after FMC_CLK low - 2.5

td(CLKL-NBLL) FMC_CLK low to FMC_NBL low 3 -

td(CLKH-NBLH) FMC_CLK high to FMC_NBL high THCLK + 1.5 -

tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 1.5 -

th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 0 -

DocID027107 Rev 6 167/202

STM32F446xC/E Electrical characteristics

175

Figure 58. NAND controller waveforms for read access

Figure 59. NAND controller waveforms for write access

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Electrical characteristics STM32F446xC/E

168/202 DocID027107 Rev 6

Figure 60. NAND controller waveforms for common memory read access

Figure 61. NAND controller waveforms for common memory write access

Table 98. Switching characteristics for NAND Flash read cycles(1)

1. CL = 30 pF.

Symbol Parameter Min Max Unit

tw(N0E) FMC_NOE low width 4THCLK – 0.5 4THCLK + 0.5

tsu(D-NOE) FMC_D[15-0] valid data before FMC_NOE high 9 -

th(NOE-D) FMC_D[15-0] valid data after FMC_NOE high 2.5 -

td(ALE-NOE) FMC_ALE valid before FMC_NOE low - 3THCLK - 0.5

th(NOE-ALE) FMC_NWE high to FMC_ALE invalid 3THCLK – 2 -

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DocID027107 Rev 6 169/202

STM32F446xC/E Electrical characteristics

175

SDRAM waveforms and timings

Figure 62. SDRAM read access waveforms (CL = 1)

Table 99. Switching characteristics for NAND Flash write cycles(1)

1. CL = 30 pF.

Symbol Parameter Min Max Unit

tw(NWE) FMC_NWE low width 4THCLK - 2 4THCLK ns

tv(NWE-D) FMC_NWE low to FMC_D[15-0] valid 0 - ns

th(NWE-D) FMC_NWE high to FMC_D[15-0] invalid 3THCLK – 1 - ns

td(D-NWE) FMC_D[15-0] valid before FMC_NWE high 5THCLK – 3 - ns

td(ALE-NWE) FMC_ALE valid before FMC_NWE low - 3THCLK - 0.5 ns

th(NWE-ALE) FMC_NWE high to FMC_ALE invalid 3THCLK – 2 - ns

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Electrical characteristics STM32F446xC/E

170/202 DocID027107 Rev 6

Table 100. SDRAM read timings(1)(2)

1. CL = 30 pF on data and address lines. CL=15pF on FMC_SDCLK.

2. Guaranteed based on test during characterization.

Symbol Parameter Min Max Unit

tw(SDCLK) FMC_SDCLK period 2THCLK-0.5 2THCLK+0.5

tsu(SDCLKH _Data) Data input setup time 1 -

th(SDCLKH_Data) Data input hold time 4 -

td(SDCLKL_Add) Address valid time - 3

td(SDCLKL_ SDNE) Chip select valid time - 1.5

th(SDCLKL_SDNE) Chip select hold time 0 -

td(SDCLKL_SDNRAS) SDNRAS valid time - 1.5

th(SDCLKL_SDNRAS) SDNRAS hold time 0 -

td(SDCLKL_SDNCAS) SDNCAS valid time - 0.5

th(SDCLKL_SDNCAS) SDNCAS hold time 0 -

Table 101. LPSDR SDRAM read timings(1)(2)

1. CL = 10 pF.

2. Guaranteed based on test during characterization.

Symbol Parameter Min Max Unit

tw(SDCLK) FMC_SDCLK period 2THCLK - 0.5 2THCLK + 0.5

tsu(SDCLKH _Data) Data input setup time 1 -

th(SDCLKH_Data) Data input hold time 5 -

td(SDCLKL_Add) Address valid time - 3

td(SDCLKL_ SDNE) Chip select valid time - 3

th(SDCLKL_SDNE) Chip select hold time 0 -

td(SDCLKL_SDNRAS) SDNRAS valid time - 2

th(SDCLKL_SDNRAS) SDNRAS hold time 0 -

td(SDCLKL_SDNCAS) SDNCAS valid time - 2

th(SDCLKL_SDNCAS) SDNCAS hold time 0 -

DocID027107 Rev 6 171/202

STM32F446xC/E Electrical characteristics

175

Figure 63. SDRAM write access waveforms

Table 102. SDRAM write timings(1)(2)

1. CL = 10 pF on data and address line. CL=15 pF on FMC_SDCLK.

2. Guaranteed based on test during characterization.

Symbol Parameter Min Max Unit

F(SDCLK) Frequency of operation - 90 MHz

tw(SDCLK) FMC_SDCLK period 2THCLK - 0.5 2THCLK + 0.5

td(SDCLKL _Data) Data output valid time - 2

th(SDCLKL _Data) Data output hold time 0.5 -

td(SDCLK _Add) Address valid time - 3

td(SDCLKL _SDNWE)) SDNWE valid time - 1.5

th(SDCLKL_SDNWE)) SDNWE hold time 0 -

td(SDCLKL_SDNE)) Chip select valid time - 1.5

th(SDCLKL_SDNE) Chip select hold time 0 -

td(SDCLKL_SDNRAS) SDNRAS valie time - 1

th(SDCLKL_SDNRAS) SDNRAS hold time 0 -

td(SDCLKL_SDNCAS) SDNCAS valid time - 1

th(SDCLKL_SDNCAS) SDNCAS hold time 0 -

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Electrical characteristics STM32F446xC/E

172/202 DocID027107 Rev 6

6.3.27 Camera interface (DCMI) timing specifications

Unless otherwise specified, the parameters given in Table 104 for DCMI are derived

from tests performed under the ambient temperature, fHCLK frequency and VDD supply

voltage summarized in Table 16, with the following configuration:

•DCMI_PIXCLK polarity: falling

•DCMI_VSYNC and DCMI_HSYNC polarity: high

•Data formats: 14 bits

Table 103. LPSDR SDRAM write timings(1)(2)

1. CL = 10 pF.

2. Guaranteed based on test during characterization.

Symbol Parameter Min Max Unit

F(SDCLK) Frequency of operation - 84 MHz

tw(SDCLK) FMC_SDCLK period 2THCLK - 0.5 2THCLK + 0.5

td(SDCLKL _Data) Data output valid time - 5

th(SDCLKL _Data) Data output hold time 0.5 -

td(SDCLK _Add) Address valid time - 3

td(SDCLKL _SDNWE)) SDNWE valid time - 3

th(SDCLKL_SDNWE)) SDNWE hold time 0 -

td(SDCLKL_SDNE)) Chip select valid time - 2.5

th(SDCLKL_ SDNE) Chip select hold time 0 -

td(SDCLKL_SDNRAS) SDNRAS valid time - 2

th(SDCLKL_SDNRAS) SDNRAS hold time 0 -

td(SDCLKL_SDNCAS) SDNCAS valid time - 2

td(SDCLKL_SDNCAS) SDNCAS hold time 0 -

Table 104. DCMI characteristics

Symbol Parameter Min Max Unit

- Frequency ratio DCMI_PIXCLK/fHCLK -0.4 -

DCMI_PIXCLK Pixel clock input - 54 MHz

DPixel Pixel clock input duty cycle 30 70 %

tsu(DATA) Data input setup time 1 -

th(DATA) Data input hold time 3.5 -

tsu(HSYNC)

tsu(VSYNC)

DCMI_HSYNC/DCMI_VSYNC input setup time 2 -

th(HSYNC)

th(VSYNC)

DCMI_HSYNC/DCMI_VSYNC input hold time 0 -

DocID027107 Rev 6 173/202

STM32F446xC/E Electrical characteristics

175

Figure 64. DCMI timing diagram

6.3.28 SD/SDIO MMC card host interface (SDIO) characteristics

Unless otherwise specified, the parameters given in Table 105 for the SDIO are derived

from tests performed under the ambient temperature, fPCLK2 frequency and VDD supply

voltage conditions summarized in Table 16, with the following configuration:

•Output speed is set to OSPEEDRy[1:0] = 10

•Capacitive load C = 30 pF

•Measurement points are done at CMOS levels: 0.5VDD

Refer to Section 6.3.17: I/O port characteristics for more details on the input/output

characteristics.

Figure 65. SDIO high-speed mode

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Electrical characteristics STM32F446xC/E

174/202 DocID027107 Rev 6

Figure 66. SD default mode

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Table 105. Dynamic characteristics: SD / MMC characteristics(1)(2)

Symbol Parameter Conditions Min Typ Max Unit

fPP Clock frequency in data transfer mode - 0 - 50 MHz

- SDIO_CK/fPCLK2 frequency ratio - - - 8/3 -

tW(CKL) Clock low time fpp =50MHz 9.5 10.5 -

tW(CKH) Clock high time fpp =50MHz 8.5 9.5 -

CMD, D inputs (referenced to CK) in MMC and SD HS mode

tISU Input setup time HS fpp =50MHz 1 - -

tIH Input hold time HS fpp =50MHz 4.5 - -

CMD, D outputs (referenced to CK) in MMC and SD HS mode

tOV Output valid time HS fpp =50MHz - 12.5 13

tOH Output hold time HS fpp =50MHz 11 - -

CMD, D inputs (referenced to CK) in SD default mode

tISUD Input setup time SD fpp =25MHz 2.5 - -

tIHD Input hold time SD fpp =25MHz 5.5 - -

CMD, D outputs (referenced to CK) in SD default mode

tOVD Output valid default time SD fpp =24MHz -3.54

tOHD Output hold default time SD fpp =24MHz 2- -

1. Guaranteed based on test during characterization.

2. VDD = 2.7 to 3.6 V.

DocID027107 Rev 6 175/202

STM32F446xC/E Electrical characteristics

175

6.3.29 RTC characteristics

Table 106. Dynamic characteristics: eMMC characteristics VDD = 1.7 V to 1.9 V(1)(2)

Symbol Parameter Conditions Min Typ Max Unit

fPP Clock frequency in data transfer mode - 0 - 50 MHz

- SDIO_CK/fPCLK2 frequency ratio - - - 8/3 -

tW(CKL) Clock low time fpp =50MHz 9.5 10.5 -

tW(CKH) Clock high time fpp =50MHz 8.5 9.5 -

CMD, D inputs (referenced to CK) in eMMC mode

tISU Input setup time HS fpp =50MHz 0.5 - -

tIH Input hold time HS fpp =50MHz 7.5 - -

CMD, D outputs (referenced to CK) in eMMC mode

tOV Output valid time HS fpp =50MHz - 13.5 14.5

tOH Output hold time HS fpp =50MHz 12 - -

1. Guaranteed based on test during characterization.

2. VDD = 2.7 to 3.6 V.

Table 107. RTC characteristics

Symbol Parameter Conditions Min Max

-f

PCLK1/RTCCLK frequency ratio Any read/write operation

from/to an RTC register 4-

Package information STM32F446xC/E

176/202 DocID027107 Rev 6

7 Package information

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK® is an ST trademark.

7.1 LQFP64 package information

Figure 67. LQFP64-10x10 mm 64 pin low-profile quad flat package outline

1. Drawing is not to scale

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Table 108. LQFP64 – 10 x 10 mm low-profile quad flat package mechanical data

Symbol

millimeters inches(1)

Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630

A1 0.050 - 0.150 0.0020 - 0.0059

A2 1.350 1.400 1.450 0.0531 0.0551 0.0571

b 0.170 0.220 0.270 0.0067 0.0087 0.0106

c 0.090 - 0.200 0.0035 - 0.0079

DocID027107 Rev 6 177/202

STM32F446xC/E Package information

199

Figure 68. LQFP64 Recommended footprint

1. Drawing is not to scale.

2. Dimensions are in millimeters.

D 11.800 12.000 12.200 0.4646 0.4724 0.4803

D1 9.800 10.000 10.200 0.3858 0.3937 0.4016

D3 - 7.500 - - 0.2953 -

E 11.800 12.000 12.200 0.4646 0.4724 0.4803

E1 9.800 10.000 10.200 0.3858 0.3937 0.4016

E3 - 7.500 - - 0.2953 -

e - 0.500 - - 0.0197 -

L 0.450 0.600 0.750 0.0177 0.0236 0.0295

L1 - 1.000 - - 0.0394 -

K 0°3.5°7° 0°3.5°7°

ccc - - 0.080 - - 0.0031

1. Values in inches are converted from mm and rounded to 4 decimal digits.

Table 108. LQFP64 – 10 x 10 mm low-profile quad flat package mechanical data (continued)

Symbol

millimeters inches(1)

Min Typ Max Min Typ Max

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Package information STM32F446xC/E

178/202 DocID027107 Rev 6

Device marking for LQFP64

The following figure gives an example of topside marking orientation versus pin 1 identifier

location.

Other optional marking or inset/upset marks, which identify the parts throughout supply

chain operations, are not indicated below.

Figure 69. LQFP64 marking example (package top view)

1. Parts marked as “ES”, "E" or accompanied by an Engineering Sample notification letter, are not yet

qualified and therefore not yet ready to be used in production and any consequences deriving from such

usage will not be at ST charge. In no event ST will be liable for any customer usage of these engineering

samples in production. ST Quality has to be contacted prior to any decision to use these Engineering

samples to run qualification activity.

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DocID027107 Rev 6 179/202

STM32F446xC/E Package information

199

7.2 LQFP100 package information

Figure 70. LQFP100, 14 x 14 mm 100-pin low-profile quad flat package outline

1. Drawing is not to scale.

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Table 109. LQPF100, 14 x 14 mm 100-pin low-profile quad flat

package mechanical data

Symbol

millimeters inches(1)

Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630

A1 0.050 - 0.150 0.0020 - 0.0059

A2 1.350 1.400 1.450 0.0531 0.0551 0.0571

b 0.170 0.220 0.270 0.0067 0.0087 0.0106

c 0.090 - 0.200 0.0035 - 0.0079

D 15.800 16.000 16.200 0.6220 0.6299 0.6378

D1 13.800 14.000 14.200 0.5433 0.5512 0.5591

D3 - 12.000 - - 0.4724 -

E 15.800 16.000 16.200 0.6220 0.6299 0.6378

Package information STM32F446xC/E

180/202 DocID027107 Rev 6

Figure 71. LQFP100 - 100-pin, 14 x 14 mm low-profile quad flat

recommended footprint

1. Dimensions are expressed in millimeters.

E1 13.800 14.000 14.200 0.5433 0.5512 0.5591

E3 - 12.000 - - 0.4724 -

e - 0.500 - - 0.0197 -

L 0.450 0.600 0.750 0.0177 0.0236 0.0295

L1 - 1.000 - - 0.0394 -

k 0°3.5°7° 0°3.5°7°

ccc - - 0.080 - - 0.0031

1. Values in inches are converted from mm and rounded to 4 decimal digits.

Table 109. LQPF100, 14 x 14 mm 100-pin low-profile quad flat

package mechanical data (continued)

Symbol

millimeters inches(1)

Min Typ Max Min Typ Max

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DocID027107 Rev 6 181/202

STM32F446xC/E Package information

199

Device marking for LQFP100 package

The following figure gives an example of topside marking orientation versus pin 1 identifier

location.

Other optional marking or inset/upset marks, which identify the parts throughout supply

chain operations, are not indicated below.

Figure 72. LQFP100 marking example (package top view)

1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet

qualified and therefore not yet ready to be used in production and any consequences deriving from such

usage will not be at ST charge. In no event ST will be liable for any customer usage of these engineering

samples in production. ST Quality has to be contacted prior to any decision to use these Engineering

samples to run qualification activity.

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Package information STM32F446xC/E

182/202 DocID027107 Rev 6

7.3 LQFP144 package information.

Figure 73. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package outline

1. Drawing is not to scale.

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DocID027107 Rev 6 183/202

STM32F446xC/E Package information

199

Table 110. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package mechanical data

Symbol

millimeters inches(1)

Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630

A1 0.050 - 0.150 0.0020 - 0.0059

A2 1.350 1.400 1.450 0.0531 0.0551 0.0571

b 0.170 0.220 0.270 0.0067 0.0087 0.0106

c 0.090 - 0.200 0.0035 - 0.0079

D 21.800 22.000 22.200 0.8583 0.8661 0.874

D1 19.800 20.000 20.200 0.7795 0.7874 0.7953

D3 - 17.500 - - 0.689 -

E 21.800 22.000 22.200 0.8583 0.8661 0.8740

E1 19.800 20.000 20.200 0.7795 0.7874 0.7953

E3 - 17.500 - - 0.6890 -

e - 0.500 - - 0.0197 -

L 0.450 0.600 0.750 0.0177 0.0236 0.0295

L1 - 1.000 - - 0.0394 -

k 0°3.5°7° 0°3.5°7°

ccc - - 0.080 - - 0.0031

1. Values in inches are converted from mm and rounded to 4 decimal digits.

Package information STM32F446xC/E

184/202 DocID027107 Rev 6

Figure 74. LQFP144 recommended footprint

1. Dimensions are expressed in millimeters.

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DocID027107 Rev 6 185/202

STM32F446xC/E Package information

199

Device marking for LQFP144 package

The following figure gives an example of topside marking orientation versus pin 1 identifier

location.

Other optional marking or inset/upset marks, which identify the parts throughout supply

chain operations, are not indicated below.

Figure 75. LQFP144 marking example (package top view)

1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet

qualified and therefore not yet ready to be used in production and any consequences deriving from such

usage will not be at ST charge. In no event ST will be liable for any customer usage of these engineering

samples in production. ST Quality has to be contacted prior to any decision to use these Engineering

samples to run qualification activity.

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Package information STM32F446xC/E

186/202 DocID027107 Rev 6

7.4 UFBGA144 7 x 7 mm package information

Figure 76. UFBGA144 - 144-pin, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball

grid array package outline

1. Drawing is not in scale.

Table 111. UFBGA144 - 144-pin, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball

grid array package mechanical data

Symbol

millimeters inches(1)

Min. Typ. Max. Min. Typ. Max.

A 0.460 0.530 0.600 0.0181 0.0209 0.0236

A1 0.050 0.080 0.110 0.0020 0.0031 0.0043

A2 0.400 0.450 0.500 0.0157 0.0177 0.0197

A3 - 0.130 - - 0.0051 -

A4 0.270 0.320 0.370 0.0106 0.0126 0.0146

b 0.230 0.280 0.320 0.0091 0.0110 0.0126

D 6.950 7.000 7.050 0.2736 0.2756 0.2776

D1 5.450 5.500 5.550 0.2146 0.2165 0.2185

E 6.950 7.000 7.050 0.2736 0.2756 0.2776

E1 5.450 5.500 5.550 0.2146 0.2165 0.2185

e - 0.500 - - 0.0197 -

F 0.700 0.750 0.800 0.0276 0.0295 0.0315

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DocID027107 Rev 6 187/202

STM32F446xC/E Package information

199

Figure 77. UFBGA144 - 144-ball, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball

grid array package recommended footprint

ddd - - 0.100 - - 0.0039

eee - - 0.150 - - 0.0059

fff - - 0.050 - - 0.0020

1. Values in inches are converted from mm and rounded to 4 decimal digits.

Table 112. UFBGA144 recommended PCB design rules (0.50 mm pitch BGA)

Dimension Recommended values

Pitch 0.50 mm

Dpad 0.280 mm

Dsm 0.370 mm typ. (depends on the soldermask

registration tolerance)

Stencil opening 0.280 mm

Stencil thickness Between 0.100 mm and 0.125 mm

Pad trace width 0.120 mm

Table 111. UFBGA144 - 144-pin, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball

grid array package mechanical data (continued)

Symbol

millimeters inches(1)

Min. Typ. Max. Min. Typ. Max.

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Package information STM32F446xC/E

188/202 DocID027107 Rev 6

Device marking for UFBGA144 7 x 7 mm package

The following figure gives an example of topside marking orientation versus pin 1 identifier

location.

Other optional marking or inset/upset marks, which identify the parts throughout supply

chain operations, are not indicated below.

Figure 78. UQFP144 7 x 7 mm marking example (package top view)

1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet

qualified and therefore not yet ready to be used in production and any consequences deriving from such

usage will not be at ST charge. In no event ST will be liable for any customer usage of these engineering

samples in production. ST Quality has to be contacted prior to any decision to use these Engineering

samples to run qualification activity.

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STM32F446xC/E Package information

199

7.5 UFBGA144 10 x 10 mm package information

Figure 79. UFBGA144 - 144-pin, 10 x 10 mm, 0.80 mm pitch, ultra fine pitch ball

grid array package outline

1. Drawing is not to scale.

Table 113. UFBGA144 - 144-pin, 10 x 10 mm, 0.80 mm pitch, ultra fine pitch ball

grid array package mechanical data

Symbol

millimeters inches(1)

Min. Typ. Max. Min. Typ. Max.

A 0.460 0.530 0.600 0.0181 0.0209 0.0236

A1 0.050 0.080 0.110 0.0020 0.0031 0.0043

A2 0.400 0.450 0.500 0.0157 0.0177 0.0197

A3 0.050 0.080 0.110 - 0.0051 -

A4 0.270 0.320 0.370 0.0106 0.0126 0.0146

b 0.360 0.400 0.440 0.0091 0.0110 0.0130

D 9.950 10.000 10.050 0.2736 0.2756 0.2776

D1 8.750 8.800 8.850 0.2343 0.2362 0.2382

E 9.950 10.000 10.050 0.2736 0.2756 0.2776

E1 8.750 8.800 8.850 0.2343 0.2362 0.2382

e 0.750 0.800 0.850 - 0.0197 -

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Package information STM32F446xC/E

190/202 DocID027107 Rev 6

Figure 80. UFBGA144 - 144-pin, 10 x 10 mm, 0.80 mm pitch, ultra fine pitch ball

grid array package recommended footprint

F 0.550 0.600 0.650 0.0177 0.0197 0.0217

ddd - - 0.080 - - 0.0039

eee - - 0.150 - - 0.0059

fff - - 0.080 - - 0.0020

1. Values in inches are converted from mm and rounded to 4 decimal digits.

Table 114. UFBGA144 recommended PCB design rules (0.80 mm pitch BGA)

Dimension Recommended values

Pitch 0.80 mm

Dpad 0.400 mm

Dsm 0.550 mm typ. (depends on the soldermask

registration tolerance)

Stencil opening 0.400 mm

Stencil thickness Between 0.100 mm and 0.125 mm

Pad trace width 0.120 mm

Table 113. UFBGA144 - 144-pin, 10 x 10 mm, 0.80 mm pitch, ultra fine pitch ball

grid array package mechanical data (continued)

Symbol

millimeters inches(1)

Min. Typ. Max. Min. Typ. Max.

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DocID027107 Rev 6 191/202

STM32F446xC/E Package information

199

Device marking for UFBGA144 10 x 10 mm package

The following figure gives an example of topside marking orientation versus pin 1 identifier

location.

Other optional marking or inset/upset marks, which identify the parts throughout supply

chain operations, are not indicated below.

Figure 81. UQFP144 10 x 10 mm marking example (package top view)

1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet

qualified and therefore not yet ready to be used in production and any consequences deriving from such

usage will not be at ST charge. In no event ST will be liable for any customer usage of these engineering

samples in production. ST Quality has to be contacted prior to any decision to use these Engineering

samples to run qualification activity.

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Package information STM32F446xC/E

192/202 DocID027107 Rev 6

7.6 WLCSP81 package information

Figure 82. WLCSP81 - 81-pin, 3.693 x 3.815 mm, 0.4 mm pitch wafer level chip scale

package outline

1. Drawing is not to scale.

Table 115. WLCSP81- 81-pin, 3.693 x 3.815 mm, 0.4 mm pitch wafer level chip scale

package mechanical data

Symbol

millimeters inches(1)

Min Typ Max Min Typ Max

A - - 0.600 - - 0.0236

A1 - 0.170 - - 0.0067 -

A2 - 0.380 - - 0.0150 -

A3(2) - 0.025 - - 0.0010 -

b(3) 0.220 0.250 0.280 0.0087 0.0098 0.0110

D 3.658 3.693 3.728 0.1440 0.1454 0.1468

E 3.780 3.815 3.850 0.1488 0.1502 0.1516

e - 0.400 - - 0.0157 -

e1 - 3.200 - - 0.1260 -

e2 - 3.200 - - 0.1260 -

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STM32F446xC/E Package information

199

Figure 83. WLCSP81- 81-pin, 4.4084 x 3.7594 mm, 0.4 mm pitch wafer level chip scale

package recommended footprint

F - 0.2465 - - 0.0097 -

G - 0.3075 - - 0.0121 -

aaa - - 0.100 - - 0.0039

bbb - - 0.100 - - 0.0039

ccc - - 0.100 - - 0.0039

ddd - - 0.050 - - 0.0020

eee - - 0.050 - - 0.0020

1. Values in inches are converted from mm and rounded to 4 decimal digits.

2. Back side coating

3. Dimension is measured at the maximum bump diameter parallel to primary datum Z.

Table 116. WLCSP81 recommended PCB design rules (0.4 mm pitch)

Dimension Recommended values

Pitch 0.4 mm

Dpad 0.225 mm

Dsm 0.290 mm typ. (depends on the soldermask

registration tolerance)

Stencil opening 0.250 mm

Stencil thickness 0.100 mm

Table 115. WLCSP81- 81-pin, 3.693 x 3.815 mm, 0.4 mm pitch wafer level chip scale

package mechanical data (continued)

Symbol

millimeters inches(1)

Min Typ Max Min Typ Max

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Package information STM32F446xC/E

194/202 DocID027107 Rev 6

Device marking for WLCSP81 package

The following figure gives an example of topside marking orientation versus pin 1 identifier

location.

Other optional marking or inset/upset marks, which identify the parts throughout supply

chain operations, are not indicated below.

Figure 84. WLCSP81 10 x 10 mm marking example (package top view)

1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet

qualified and therefore not yet ready to be used in production and any consequences deriving from such

usage will not be at ST charge. In no event ST will be liable for any customer usage of these engineering

samples in production. ST Quality has to be contacted prior to any decision to use these Engineering

samples to run qualification activity.

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DocID027107 Rev 6 195/202

STM32F446xC/E Package information

199

7.7 Thermal characteristics

The maximum chip-junction temperature, TJ max, in degrees Celsius, may be calculated

using the following equation:

TJ max = TA max + (PD max x Θ

JA)

Where:

•TA max is the maximum ambient temperature in °C,

•Θ

JA is the package junction-to-ambient thermal resistance, in °C/W,

•PD max is the sum of PINT max and PI/O max (PD max = PINT max + PI/Omax),

•PINT max is the product of IDD and VDD, expressed in Watts. This is the maximum chip

internal power.

PI/O max represents the maximum power dissipation on output pins where:

PI/O max = Σ (VOL × IOL) + Σ((VDD – VOH) × IOH),

taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the

application.

Reference document

JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural

Convection (Still Air). Available from www.jedec.org.

Table 117. Package thermal characteristics

Symbol Parameter Value Unit

Thermal resistance junction-ambient

LQFP64 - 10 × 10 mm 46

°C/W

Thermal resistance junction-ambient

LQFP100 - 14 × 14 mm / 0.5 mm pitch 42

Thermal resistance junction-ambient

LQFP144 - 20 × 20 mm / 0.5 mm pitch 33

Thermal resistance junction-ambient

UFBGA144 - 7 × 7 mm / 0.5 mm pitch 51

Thermal resistance junction-ambient

UFBGA144 - 10 × 10 mm / 0.8 mm pitch 48

Thermal resistance junction-ambient

WLCSP81 48

Part numbering STM32F446xC/E

196/202 DocID027107 Rev 6

8 Part numbering

For a list of available options (speed, package, etc.) or for further information on any aspect

of this device, please contact your nearest ST sales office.

Table 118. Ordering information scheme

Example: STM32 F 446 V C T 6 xxx

Device family

STM32 = ARM-based 32-bit microcontroller

Product type

F = general-purpose

Device subfamily

446= STM32F446xC/E,

Pin count

M = 81 pins

R = 64 pins

V = 100 pins

Z = 144 pins

Flash memory size

C=256 Kbytes of Flash memory

E=512 Kbytes of Flash memory

Package

H = UFBGA (7 x 7 mm)

J = UFBGA (10 x 10 mm)

T = LQFP

Y = WLCSP

Temperature range

6 = Industrial temperature range, –40 to 85 °C.

7 = Industrial temperature range, –40 to 105 °C.

Options

xxx = programmed parts

TR = tape and reel

DocID027107 Rev 6 197/202

STM32F446xC/E Application block diagrams

199

Appendix A Application block diagrams

A.1 USB OTG full speed (FS) interface solutions

Figure 85. USB controller configured as peripheral-only and used in Full speed mode

1. External voltage regulator only needed when building a VBUS powered device.

2. The same application can be developed using the OTG HS in FS mode to achieve enhanced performance

thanks to the large Rx/Tx FIFO and to a dedicated DMA controller.

Figure 86. USB controller configured as host-only and used in full speed mode

1. The current limiter is required only if the application has to support a VBUS powered device. A basic power

switch can be used if 5 V are available on the application board.

2. The same application can be developed using the OTG HS in FS mode to achieve enhanced performance

thanks to the large Rx/Tx FIFO and to a dedicated DMA controller.

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Application block diagrams STM32F446xC/E

198/202 DocID027107 Rev 6

Figure 87. USB controller configured in dual mode and used in full speed mode

1. External voltage regulator only needed when building a VBUS powered device.

2. The current limiter is required only if the application has to support a VBUS powered device. A basic power

switch can be used if 5 V are available on the application board.

3. The ID pin is required in dual role only.

4. The same application can be developed using the OTG HS in FS mode to achieve enhanced performance

thanks to the large Rx/Tx FIFO and to a dedicated DMA controller.

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DocID027107 Rev 6 199/202

STM32F446xC/E Application block diagrams

199

A.2 USB OTG high speed (HS) interface solutions

Figure 88. USB controller configured as peripheral, host, or dual-mode

and used in high speed mode

1. It is possible to use MCO1 or MCO2 to save a crystal. It is however not mandatory to clock the

STM32F446xx with a 24 or 26 MHz crystal when using USB HS. The above figure only shows an example

of a possible connection.

2. The ID pin is required in dual role only.

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Revision history STM32F446xC/E

200/202 DocID027107 Rev 6

Revision history

Table 119. Document revision history

Date Revision Changes

17-Feb-2015 1 Initial release.

16-Mar-2015 2

Added note 2 inside Table 2

Updated Table 11 , Table 23, Table 24, Table 25, Table 26, Table 30,

Table 51, Table 52, Table 53, and Table 61

Added condition inside Typical and maximum current consumption and

Additional current consumption

Added FMPI2C characteristics

Added Table 62 and Figure 35

29-May-2015 3

Updated:

–Section 6.3.15: Absolute maximum ratings (electrical sensitivity)

–Section 7: Package information

–Table 2: STM32F446xC/E features and peripheral counts

–Table 13: STM32F446xC/xE WLCSP81 ballout

–Figure 53: ESD absolute maximum ratings

–Figure 54: Synchronous multiplexed NOR/PSRAM read timings

Added:

–Figure 78: UQFP144 7 x 7 mm marking example (package top view),

–Figure 81: UQFP144 10 x 10 mm marking example (package top

view),

–Figure 84: WLCSP81 10 x 10 mm marking example (package top

view)

10-Aug-2015 4

Updated:

–Figure 14: STM32F446xC/xE UFBGA144 ballout

–Table 10: STM32F446xx pin and ball descriptions

–Table 18: VCAP_1/VCAP_2 operating conditions

–Section 3.15: Power supply schemes

–Section 6.3.2: VCAP_1/VCAP_2 external capacitor

Added:

–Figure 5: VDDUSB connected to an external independent power

supply

– Notes 3 and 4 below Figure 18: Power supply scheme

DocID027107 Rev 6 201/202

STM32F446xC/E Revision history

201

03-Nov-2015 5

Updated:

–Introduction;

–Table 2: STM32F446xC/E features and peripheral counts

–Table 43: Main PLL characteristics

– Title of Table 45: PLLISAI characteristics

–Table 109: LQPF100, 14 x 14 mm 100-pin low-profile quad flat

package mechanical data

–Table 118: Ordering information scheme

–Figure 10: STM32F446xC/xE LQFP64 pinout

–Figure 11: STM32F446xC/xE LQFP100 pinout

Added:

–Figure 77: UFBGA144 - 144-ball, 7 x 7 mm, 0.50 mm pitch, ultra fine

pitch ball grid array package recommended footprint

–Figure 111: UFBGA144 - 144-pin, 7 x 7 mm, 0.50 mm pitch, ultra fine

pitch ball grid array package mechanical data

02-Sep-2016 6

Updated:

–Section 7: Package information;

–Table 30: Typical current consumption in Run mode, code with data

processing running from Flash memory or RAM, regulator ON (ART

accelerator enabled except prefetch), VDD=1.7 V

–Table 74: ADC characteristics

–Table 85: DAC characteristics

Added:

– Note 3 in Figure 33: Recommended NRST pin protection

– Note 4 in Table 41: HSI oscillator characteristics

Table 119. Document revision history (continued)

Date Revision Changes

STM32F446xC/E

202/202 DocID027107 Rev 6

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ARM® Cortex® M4 32b MCU+FPU, 225DMIPS, Up To 512kB Flash/128+4KB RAM, USB OTG HS/FS, 17 TIMs, 3 ADCs, 20 Comm. Interfaces Cortex Manual

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