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2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
SST49LF002A / 003A / 004A / 008A2Mb / 3Mb / 4Mb / 8Mb Firmware Hub for Intel 8xx Chipsets

Advance Information

FEATURES:
• Firmware Hub for Intel 8xx Chipsets
• 2 Mbit, 3 Mbit, 4 Mbit, or 8 Mbit SuperFlash
memory array for code/data storage
– SST49LF002A: 256K x8 (2 Mbit)
– SST49LF003A: 384K x8 (3 Mbit)
– SST49LF004A: 512K x8 (4 Mbit)
– SST49LF008A: 1024K x8 (8 Mbit)
• Flexible Erase Capability
– Uniform 4 KByte Sectors
– Uniform 16 KByte overlay blocks for
SST49LF002A
– Uniform 64 KByte overlay blocks for
SST49LF003A/004A/008A
– Top Boot Block protection
- 16 KByte for SST49LF002A
- 64 KByte for SST49LF003A/004A/008A
– Chip-Erase for PP Mode Only
• Single 3.0-3.6V Read and Write Operations
• Superior Reliability
– Endurance:100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
– Active Read Current: 6 mA (typical)
– Standby Current: 10 µA (typical)
• Fast Sector-Erase/Byte-Program Operation
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
SST49LF002A: 4 seconds (typical)
SST49LF003A: 6 seconds (typical)
SST49LF004A: 8 seconds (typical)
SST49LF008A: 15 seconds (typical)
– Single-pulse Program or Erase
– Internal timing generation

• Two Operational Modes
– Firmware Hub Interface (FWH) Mode for
in-system operation
– Parallel Programming (PP) Mode for fast
production programming
• Firmware Hub Hardware Interface Mode
– 5-signal communication interface supporting
byte Read and Write
– 33 MHz clock frequency operation
– WP# and TBL# pins provide hardware write
protect for entire chip and/or top Boot Block
– Block Locking Register for all blocks
– Standard SDP Command Set
– Data# Polling and Toggle Bit for End-of-Write
detection
– 5 GPI pins for system design flexibility
– 4 ID pins for multi-chip selection
• Parallel Programming (PP) Mode
– 11-pin multiplexed address and
8-pin data I/O interface
– Supports fast In-System or PROM programming
for manufacturing
• CMOS and PCI I/O Compatibility
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)

PRODUCT DESCRIPTION
The SST49LF00xA flash memory devices are designed
to be read-compatible with the Intel 82802 Firmware Hub
(FWH) device for PC-BIOS application. It provides protection for the storage and update of code and data in
addition to adding system design flexibility through five
general purpose inputs. Two interface modes are supported by the SST49LF00xA: Firmware Hub (FWH)
Interface Mode for In-System programming and Parallel
Programming (PP) Mode for fast factory programming of
PC-BIOS applications.

©2002 Silicon Storage Technology, Inc.
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1

The SST49LF00xA flash memory devices are manufactured with SST’s proprietary, high performance SuperFlash Technology. The split-gate cell design and thick
oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The
SST49LF00xA devices significantly improve performance
and reliability, while lowering power consumption. The
SST49LF00xA devices write (Program or Erase) with a
single 3.0-3.6V power supply. It uses less energy during
Erase and Program than alternative flash memory technologies. The total energy consumed is a function of the
applied voltage, current and time of application. Since for
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
Intel is a registered trademark of Intel Corporation.
These specifications are subject to change without notice.

2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
any given voltage range, the SuperFlash technology uses
less current to program and has a shorter Erase time, the
total energy consumed during any Erase or Program operation is less than alternative flash memory technologies.
The SST49LF00xA products provide a maximum ByteProgram time of 20 µsec. The entire memory can be
erased and programmed byte-by-byte typically in 15 seconds for an 8-Mbit device, when using status detection
features such as Toggle Bit or Data# Polling to indicate the
completion of Program operation. The SuperFlash technology provides fixed Erase and Program time, independent of the number of Erase/Program cycles that have
performed. Therefore the system software or hardware
does not have to be calibrated or correlated to the cumulated number of Erase/Program cycles as is necessary
with alternative flash memory technologies, whose Erase
and Program time increase with accumulated Erase/Program cycles.

nication between Host and the SST49LF00xA occurs via
the 4-bit I/O communication signals, FWH [3:0] and the
FWH4. In PP mode, the device is programmed via an 11bit address and an 8-bit data I/O parallel signals. The
address inputs are multiplexed in row and column
selected by control signal R/C# pin. The column
addresses are mapped to the higher internal addresses,
and the row addresses are mapped to the lower internal
addresses. See the Device Memory Maps in Figures 3
through 6 for address assignments.

FIRMWARE HUB (FWH) MODE
Device Operation
The FWH mode uses a 5-signal communication interface,
FWH[3:0] and FWH4, to control operations of the
SST49LF00xA. Operations such as Memory Read and
Memory Write uses Intel FWH propriety protocol. JEDEC
Standard SDP (Software Data Protection) Byte-Program,
Sector-Erase and Block-Erase command sequences are
incorporated into the FWH memory cycles. Chip-Erase is
only available in PP Mode.

To protect against inadvertent write, the SST49LF00xA
devices employ hardware and software data (SDP) protection schemes. It is offered with typical endurance of
100,000 cycles. Data retention is rated at greater than 100
years.

The device enters standby mode when FWH4 is high and
no internal operation is in progress. The device is in ready
mode when FWH4 is low and no activity is on the FWH bus.

To meet high density, surface mount requirements, the
SST49LF00xA device is offered in 32-lead TSOP and 32lead PLCC packages. See Figures 7 and 8 for pin assignments and Table 8 for pin descriptions.

Firmware Hub Interface Cycles

Mode Selection and Description

Addresses and data are transferred to and from the
SST49LF00xA by a series of “fields,” where each field contains 4 bits of data. ST49LF00xA supports only single-byte
read and writes, and all fields are one clock cycle in length.
Field sequences and contents are strictly defined for Read
and Write operations. Addresses in this section refer to
addresses as seen from the SST49LF00xA’s “point of
view,” some calculation will be required to translate these to
the actual locations in the memory map (and vice versa) if
multiple memory device is used on the bus. Tables 1 and 2
list the field sequences for Read and Write cycles.

The SST49LF00xA flash memory devices can operate in
two distinct interface modes: the Firmware Hub Interface
(FWH) mode and the Parallel Programming (PP) mode.
The IC (Interface Configuration pin) is used to set the
interface mode selection. If the IC pin is set to logic High,
the device is in PP mode; while if the IC pin is set Low,
the device is in the FWH mode. The IC selection pin must
be configured prior to device operation. The IC pin is
internally pulled down if the pin is not connected. In FWH
mode, the device is configured to interface with its host
using Intel’s Firmware Hub proprietary protocol. Commu-

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SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
TABLE 1: FWH READ CYCLE
Clock
Cycle

Field
Name

Field Contents
FWH[3:0]1

FWH[3:0]
Direction

1

START

1101

IN

FWH4 must be active (low) for the part to respond. Only the
last start field (before FWH4 transitioning high) should be
recognized. The START field contents indicate a FWH
memory Read cycle.

2

IDSEL

0000 to 1111

IN

Indicates which FWH device should respond. If the to IDSEL (ID
select) field matches the value ID[3:0], then that particular device
will respond to the whole bus cycle.

3-9

IMADDR

YYYY

IN

These seven clock cycles make up the 28-bit memory
address. YYYY is one nibble of the entire address.
Addresses are transferred most-significant nibble first.

10

IMSIZE

0000 (1 byte)

IN

A field of this size indicates how many bytes will be or transferred during multi-byte operations. The SST49LF00xA will
only support single-byte operation. IMSIZE=0000b

11

TAR0

1111

IN
then Float

In this clock cycle, the master (Intel ICH) has driven the bus
then float to all ‘1’s and then floats the bus, prior to the next
clock cycle. This is the first part of the bus “turnaround
cycle.”

12

TAR1

1111 (float)

Float
then OUT

The SST49LF00xA takes control of the bus during this
cycle. During the next clock cycle, it will be driving “sync
data.”

13

RSYNC

0000 (READY)

OUT

During this clock cycle, the FWH will generate a “readysync” (RSYNC) indicating that the least-significant nibble of
the least-significant byte will be available during the next
clock cycle.

14

DATA

YYYY

OUT

YYYY is the least-significant nibble of the least-significant
data byte.

15

DATA

YYYY

OUT

YYYY is the most-significant nibble of the least-significant
data byte.

16

TAR0

1111

OUT
then Float

In this clock cycle, the SST49LF00xA has driven the bus to
all ones and then floats the bus prior to the next clock cycle.
This is the first part of the bus “turnaround cycle.”

17

TAR1

1111 (float)

Float then
IN

The master (Intel ICH) resumes control of the bus during
this cycle.

Comments

T1.3 504

1. Field contents are valid on the rising edge of the present clock cycle.

CLK
FWH4
FWH[3:0]

STR

IDS

IMADDR

IMS

TAR

RSYNC

DATA

TAR

504 ILL F59.1

FIGURE 1: SINGLE-BYTE READ WAVEFORMS

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2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
TABLE 2: FWH WRITE CYCLE
Clock
Cycle

Field
Name

Field Contents
FWH[3:0]1

FWH[3:0]
Direction

1

START

1110

IN

FWH4 must be active (low) for the part to respond.
Only the last start field (before FWH4 transitioning
high) should be recognized. The START field contents
indicate a FWH memory Read cycle.

2

IDSEL

0000 to 1111

IN

Indicates which SST49LF00xA device should
respond. If the IDSEL (ID select) field matches the
value ID[3:0], then that particular device will respond
to the whole bus cycle.

3-9

IMADDR

YYYY

IN

These seven clock cycles make up the 28-bit memory
address. YYYY is one nibble of the entire address.
Addresses are transferred most-significant nibble first.

10

IMSIZE

0000 (1 byte)

IN

This size field indicates how many bytes will be
transferred during multi-byte operations. The FWH
only supports single-byte writes. IMSIZE=0000b

11

DATA

YYYY

IN

This field is the least-significant nibble of the data byte.
This data is either the data to be programmed into the
flash memory or any valid flash command.

12

DATA

YYYY

IN

This field is the most-significant nibble of the data byte.

13

TAR0

1111

IN then Float

In this clock cycle, the master (Intel ICH) has driven the
then float bus to all ‘1’s and then floats the bus prior to
the next clock cycle. This is the first part of the bus
“turnaround cycle.”

14

TAR1

1111 (float)

Float then OUT

The SST49LF00xA takes control of the bus during this
cycle. During the next clock cycle it will be driving the
“sync” data.

15

RSYNC

0000

OUT

The SST49LF00xA outputs the values 0000, indicating that it has received data or a flash command.

16

TAR0

1111

OUT then Float

In this clock cycle, the SST49LF00xA has driven the
bus to all then float ‘1’s and then floats the bus prior to
the next clock cycle. This is the first part of the bus
“turnaround cycle.”

17

TAR1

1111 (float)

Float then IN

The master (Intel ICH) resumes control of the bus during
this cycle.

Comments

T2.4 504

1. Field contents are valid on the rising edge of the present clock cycle.

CLK
FWH4
FWH[3:0]

STR

IDS

IMADDR

IMS

DATA

TAR

RSYNC

TAR
504 ILL F60.1

FIGURE 2: WRITE WAVEFORMS

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2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information

Abort Mechanism

WP# pin during a Program or Erase operation could
cause unpredictable results. TBL# and WP# pins cannot
be left unconnected.

If FWH4 is driven low for one or more clock cycles during a
FWH cycle, the cycle will be terminated and the device will
wait for the ABORT command. The host may drive the
FWH[3:0] with ‘1111b’ (ABORT command) to return the
device to Ready mode. If abort occurs during a Write operation, the data may be incorrectly altered.

TBL# is internally ORed with the top Boot Block Locking
register. When TBL# is low, the top Boot Block is hardware write protected regardless of the state of the WriteLock bit for the Boot Block Locking register. Clearing the
Write-Protect bit in the register when TBL# is low will have
no functional effect, even though the register may indicate
that the block is no longer locked.

Response To Invalid Fields
During FWH operations, the FWH will not explicitly indicate
that it has received invalid field sequences. The response
to specific invalid fields or sequences is as follows:

WP# is internally ORed with the Block Locking register.
When WP# is low, the blocks are hardware write protected regardless of the state of the Write-Lock bit for the
corresponding Block Locking registers. Clearing the
Write-Protect bit in any register when WP# is low will have
no functional effect, even though the register may indicate
that the block is no longer locked.

Address out of range: The FWH address sequence is
7 fields long (28 bits), but only the last five address fields
(20 bits) will be decoded by SST49LF00xA.
Address A22 has the special function of directing reads and
writes to the flash core (A22=1) or to the register space
(A22=0).

Reset
A VIL on INIT# or RST# pin initiates a device reset. INIT#
and RST# pins have the same function internally. It is
required to drive INIT# or RST# pins low during a system
reset to ensure proper CPU initialization.

The SST49LF003A features are equivalent to the
SST49LF004A with 128 KByte less memory. For the
SST49LF003A, operations beyond the 3-Mbit boundary
(below 20000H) are not valid (see Device Memory Map).

During a Read operation, driving INIT# or RST# pins low
deselects the device and places the output drivers,
FWH[3:0], in a high-impedance state. The reset signal
must be held low for a minimal duration of time TRSTP. A
reset latency will occur if a reset procedure is performed
during a Program or Erase operation. See Table 18, Reset
Timing Parameters for more information. A device reset
during an active Program or Erase will abort the operation
and memory contents may become invalid due to data
being altered or corrupted from an incomplete Erase or
Program operation.

Invalid IMSIZE field: If the FWH receives an invalid size
field during a Read or Write operation, the device will reset
and no operation will be attempted. The SST49LF00xA will
not generate any kind of response in this situation. Invalidsize fields for a Read/Write cycle are anything but 0000b.

Device Memory Hardware Write Protection
The Top Boot Lock (TBL#) and Write Protect (WP#) pins
are provided for hardware write protection of device
memory in the SST49LF00xA. The TBL# pin is used to
write protect 16 boot sectors (64 KByte) at the highest
flash memory address range for the SST49LF003A/
004A/008A and 4 boot sectors (16 KByte) for
SST49LF002A. WP# pin write protects the remaining
sectors in the flash memory.
An active low signal at the TBL# pin prevents Program and
Erase operations of the top boot sectors. When TBL# pin is
held high, write protection of the top boot sectors is then
determined by the Boot Block Locking register. The WP#
pin serves the same function for the remaining sectors of
the device memory. The TBL# and WP# pins write protection functions operate independently of one another.
Both TBL# and WP# pins must be set to their required
protection states prior to starting a Program or Erase
operation. A logic level change occurring at the TBL# or
©2002 Silicon Storage Technology, Inc.

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2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information

Write Operation Status Detection

Controller Hub documentation. Since there is no ID support
in PP Mode, to program multiple devices a stand-alone
PROM programmer is recommended.

The SST49LF00xA device provides two software means to
detect the completion of a Write (Program or Erase) cycle,
in order to optimize the system Write cycle time. The software detection includes two status bits: Data# Polling
(DQ7) and Toggle Bit (DQ6). The End-of-Write detection
mode is incorporated into the FWH Read cycle. The actual
completion of the nonvolatile write is asynchronous with the
system; therefore, either a Data# Polling or Toggle Bit read
may be simultaneous with the completion of the Write
cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either
DQ7 or DQ6. In order to prevent spurious rejection, if an
erroneous result occurs, the software routine should
include a loop to read the accessed location an additional
two (2) times. If both reads are valid, then the device has
completed the Write cycle, otherwise the rejection is valid.

REGISTERS
There are three types of registers available on the
SST49LF00xA, the General Purpose Inputs Register,
Block Locking Registers, and the JEDEC ID Registers.
These registers appear at their respective address location
in the 4 GByte system memory map. Unused register locations will read as 00H. Any attempt to read or write any register during an internal Write operation will be ignored.

General Purpose Inputs Register
The GPI_REG (General Purpose Inputs Register) passes
the state of FGPI[4:0] pins at power-up on the
SST49LF00xA. It is recommended that the FGPI[4:0] pins
are in the desired state before FWH4 is brought low for the
beginning of the bus cycle, and remain in that state until the
end of the cycle. There is no default value since this is a
pass-through register. The GPI register for the boot device
appears at FFBC0100H in the 4 GByte system memory
map, and will appear elsewhere if the device is not the boot
device. Register is not available for read when the device is
in Erase/Program operation. See Table 3 for the GPI_REG
bits and function.

Data# Polling (DQ7)
When the SST49LF00xA device is in the internal Program
operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is
completed, DQ7 will produce true data. Note that even
though DQ7 may have valid data immediately following the
completion of an internal Write operation, the remaining
data outputs may still be invalid: valid data on the entire
data bus will appear in subsequent successive Read
cycles after an interval of 1 µs. During internal Erase operation, any attempt to read DQ7 will produce a ‘0’. Once the
internal Erase operation is completed, DQ7 will produce a
‘1’. Proper status will not be given using Data# Polling if the
address is in the invalid range.

TABLE 3: GENERAL PURPOSE INPUTS REGISTER
Pin #
Bit
7:5

Toggle Bit (DQ6)
During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce alternating
‘0’s and ‘1’s, i.e., toggling between 0 and 1. When the
internal Program or Erase operation is completed, the
toggling will stop.

Multiple Device Selection
The four ID pins, ID[3:0], allow multiple devices to be
attached to the same bus by using different ID strapping in
a system. When the SST49LF00xA is used as a boot
device, ID[3:0] must be strapped as 0000, all subsequent
devices should use a sequential up-count strapping (i.e.
0001, 0010, 0011, etc.). The SST49LF00xA will compare
the strapping values, if there is a mismatch, the device will
ignore the remainder of the cycle and go into standby
mode. For further information regarding FWH device mapping and paging, please refer to the Intel 82801(ICH) I/O

Function
Reserved

32-PLCC

32-TSOP

-

-

4

FGPI[4]
Reads status of general
purpose input pin

30

6

3

FGPI[3]
Reads status of general
purpose input pin

3

11

2

FGPI[2]
Reads status of general
purpose input pin

4

12

1

FGPI[1]
Reads status of general
purpose input pin

5

13

0

FGPI[0]
Reads status of general
purpose input pin

6

14

T3.2 504

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2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information

Block Locking Registers
SST49LF00xA provides software controlled lock protection through a set of Block Locking registers. The Block
Locking Registers are read/write registers and it is accessible through standard addressable memory locations
specified in Table 4 and Table 5. Unused register locations will read as 00H.
TABLE 4: BLOCK LOCKING REGISTERS FOR SST49LF002A1
Block Size

Protected Memory
Address Package

Memory Map
Register Address

T_BLOCK_LK

16K

3FFFFH - 3C000H

FFBF8002H

T_MINUS01_LK

16K
16K
16K

3BFFFH - 38000H
37FFFH - 34000H
33FFFH - 30000H

FFBF0002H

T_MINUS02_LK

16K
16K

2FFFFH - 2C000H
2BFFFH - 28000H

FFBE8002H

T_MINUS03_LK

16K
16K

27FFFH - 24000H
23FFFH - 20000H

FFBE0002H

T_MINUS04_LK

16K
16K

1FFFFH - 1C000H
1BFFFH - 18000H

FFBD8002H

T_MINUS05_LK

16K
16K

17FFFH - 14000H
13FFFH - 10000H

FFBD0002H

T_MINUS06_LK

16K
16K

0FFFFH - 0C000H
0BFFFH - 08000H

FFBC8002H

T_MINUS07_LK

16K
16K

07FFFH - 04000H
03FFFH - 00000H

FFBC0002H

Register

T4.1 504

1. Default value at power up is 01H

TABLE 5: BLOCK LOCKING REGISTERS FOR SST49LF003A/004A/008A1
Protected Memory Address Range

Block
Size

SST49LF003A

SST49LF004A

T_BLOCK_LK

64K

07FFFFH - 070000H

07FFFFH - 070000H

0FFFFFH - 0F0000H

FFBF0002H

T_MINUS01_LK

64K

06FFFFH - 060000H

06FFFFH - 060000H

0EFFFFH - 0E0000H

FFBE0002H

T_MINUS02_LK

64K

05FFFFH - 050000H

05FFFFH - 050000H

0DFFFFH - 0D0000H

FFBD0002H

T_MINUS03_LK

64K

04FFFFH - 040000H

04FFFFH - 040000H

0CFFFFH - 0C0000H

FFBC0002H

T_MINUS04_LK

64K

03FFFFH - 030000H

03FFFFH - 030000H

0BFFFFH - 0B0000H

FFBB0002H

T_MINUS05_LK

64K

02FFFFH - 020000H

02FFFFH - 020000H

0AFFFFH - 0A0000H

FFBA0002H

Register

SST49LF008A

Memory Map
Register Address

T_MINUS06_LK

64K

01FFFFH - 010000H

09FFFFH - 090000H

FFB90002H

T_MINUS07_LK

64K

00FFFFH - 000000H

08FFFFH - 080000H

FFB80002H

T_MINUS08_LK

64K

07FFFFH - 070000H

FFB70002H

T_MINUS09_LK

64K

06FFFFH - 060000H

FFB60002H

T_MINUS10_LK

64K

05FFFFH - 050000H

FFB50002H

T_MINUS11_LK

64K

04FFFFH - 040000H

FFB40002H

T_MINUS12_LK

64K

03FFFFH - 030000H

FFB30002H

T_MINUS13_LK

64K

02FFFFH - 020000H

FFB20002H

T_MINUS14_LK

64K

01FFFFH -010000H

FFB10002H

T_MINUS15_LK

64K

00FFFFH - 000000H

FFB00002H
T5.2 504

1. Default value at power up is 01H
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2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
TABLE 6: BLOCK LOCKING REGISTER BITS
Reserved Bit [7..2]
000000
000000
000000
000000

Lock-Down Bit [1]
0
0
1
1

Write-Lock Bit [0]
0
1
0
1

Lock Status
Full Access
Write Locked (Default State at Power-Up)
Locked Open (Full Access Locked Down)
Write Locked Down
T6.3 504

Write Lock

PARALLEL PROGRAMMING MODE

The Write-Lock bit, bit 0, controls the lock state described in
Table 6. The default Write status of all blocks after powerup is write locked. When bit 0 of the Block Locking register
is set, Program and Erase operations for the corresponding
block are prevented. Clearing the Write-Lock bit will unprotect the block. The Write-Lock bit must be cleared prior to
starting a Program or Erase operation since it is sampled at
the beginning of the operation.

Device Operation
Commands are used to initiate the memory operation functions of the device. The data portion of the software command sequence is latched on the rising edge of WE#.
During the software command sequence the row address
is latched on the falling edge of R/C# and the column
address is latched on the rising edge of R/C#.

The Write-Lock bit functions in conjunction with the hardware Write Lock pin TBL# for the top Boot Block. When
TBL# is low, it overrides the software locking scheme. The
top Boot Block Locking register does not indicate the state
of the TBL# pin.

Read
The Read operation of the SST49LF00xA device is controlled by OE#. OE# is the output control and is used to
gate data from the output pins. Refer to the Read cycle
timing diagram, Figure 14, for further details.

The Write-Lock bit functions in conjunction with the hardware WP# pin for blocks 0 to 6. When WP# is low, it overrides the software locking scheme. The Block Locking
register does not indicate the state of the WP# pin.

Reset
A VIL on RST# pin initiates a device reset.

Lock Down

Byte-Program Operation

The Lock-Down bit, bit 1, controls the Block Locking register as described in Table 6. When in the FWH interface
mode, the default Lock Down status of all blocks upon
power-up is not locked down. Once the Lock-Down bit is
set, any future attempted changes to that Block Locking
register will be ignored. The Lock-Down bit is only cleared
upon a device reset with RST# or INIT# or power down.
Current Lock Down status of a particular block can be
determined by reading the corresponding Lock-Down bit.
Once a block’s Lock-Down bit is set, the Write-Lock bits for
that block can no longer be modified, and the block is
locked down in its current state of write accessibility.

The SST49LF00xA device is programmed on a byte-bybyte basis. Before programming, one must ensure that the
sector, in which the byte which is being programmed exists,
is fully erased. The Byte-Program operation is initiated by
executing a four-byte command load sequence for Software Data Protection with address (BA) and data in the last
byte sequence. During the Byte-Program operation, the
row address (A10-A0) is latched on the falling edge of R/C#
and the column Address (A21-A11) is latched on the rising
edge of R/C#. The data bus is latched in the rising edge of
WE#. The Program operation, once initiated, will be completed, within 20 µs. See Figure 15 for Program operation
timing diagram, Figure 18 for timing waveforms, and Figure
26 for its flowchart. During the Program operation, the only
valid reads are Data# Polling and Toggle Bit. During the
internal Program operation, the host is free to perform additional tasks. Any commands written during the internal Program operation will be ignored.

JEDEC ID Registers
The JEDEC ID registers for the boot device appear at
FFBC0000H and FFBC0001H in the 4 GByte system
memory map, and will appear elsewhere if the device is not
the boot device. Register is not available for read when the
device is in Erase/Program operation. Unused register
location will read as 00H. Refer to the relevant application
note for details. See Table 7 for the device ID code.

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SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information

Sector-Erase Operation

Write Operation Status Detection

The Sector-Erase operation allows the system to erase
the device on a sector-by-sector basis. The sector architecture is based on uniform sector size of 4 KByte. The
Sector-Erase operation is initiated by executing a six-byte
command load sequence for Software Data Protection
with Sector-Erase command (30H) and sector address
(SA) in the last bus cycle. The internal Erase operation
begins after the sixth WE# pulse. The End-of-Erase can
be determined using either Data# Polling or Toggle Bit
methods. See Figure 19 for Sector-Erase timing waveforms. Any commands written during the Sector-Erase
operation will be ignored.

The SST49LF00xA device provides two software means
to detect the completion of a Write (Program or Erase)
cycle, in order to optimize the system Write cycle time. The
software detection includes two status bits: Data# Polling
(DQ7) and Toggle Bit (DQ6). The End-of-Write detection
mode is enabled after the rising edge of WE# which initiates the internal Program or Erase operation.
The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the
Write cycle. If this occurs, the system may possibly get an
erroneous result, i.e., valid data may appear to conflict with
either DQ7 or DQ6. In order to prevent spurious rejection, if an
erroneous result occurs, the software routine should include a
loop to read the accessed location an additional two (2) times.
If both reads are valid, then the device has completed the
Write cycle, otherwise the rejection is valid.

Block-Erase Operation
The Block-Erase Operation allows the system to erase the
device in 64 KByte uniform block size for the
SST49LF003A/SST49LF004A/SST49LF008A and 16
KByte uniform block size for the SST49LF002A. The BlockErase operation is initiated by executing a six-byte command load sequence for Software Data Protection with
Block-Erase command (50H) and block address. The internal Block-Erase operation begins after the sixth WE#
pulse. The End-of-Erase can be determined using either
Data# Polling or Toggle Bit methods. See Figure 20 for timing waveforms. Any commands written during the BlockErase operation will be ignored.

Data# Polling (DQ7)
When the SST49LF00xA device is in the internal Program
operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is
completed, DQ7 will produce true data. Note that even
though DQ7 may have valid data immediately following the
completion of an internal Write operation, the remaining
data outputs may still be invalid: valid data on the entire data
bus will appear in subsequent successive Read cycles after
an interval of 1 µs. During internal Erase operation, any
attempt to read DQ7 will produce a ‘0’. Once the internal
Erase operation is completed, DQ7 will produce a ‘1’. The
Data# Polling is valid after the rising edge of fourth WE#
pulse for Program operation. For Sector- or Chip-Erase, the
Data# Polling is valid after the rising edge of sixth WE#
pulse. See Figure 16 for Data# Polling timing diagram and
Figure 27 for a flowchart. Proper status will not be given
using Data# Polling if the address is in the invalid range.

Chip-Erase
The SST49LF00xA device provides a Chip-Erase operation only in PP Mode, which allows the user to erase the
entire memory array to the ‘1’s state. This is useful when
the entire device must be quickly erased.
The Chip-Erase operation is initiated by executing a six- byte
Software Data Protection command sequence with ChipErase command (10H) with address 5555H in the last byte
sequence. The internal Erase operation begins with the rising edge of the sixth WE#. During the internal Erase operation, the only valid read is Toggle Bit or Data# Polling. See
Table 10 for the command sequence, Figure 21 for timing
diagram, and Figure 29 for the flowchart. Any commands
written during the Chip-Erase operation will be ignored.

Toggle Bit (DQ6)
During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce alternating
‘0’s and ‘1’s, i.e., toggling between 0 and 1. When the
internal Program or Erase operation is completed, the
toggling will stop. The device is then ready for the next
operation. The Toggle Bit is valid after the rising edge of
fourth WE# pulse for Program operation. For Sector-,
Block- or Chip-Erase, the Toggle Bit is valid after the rising edge of sixth WE# pulse. See Figure 17 for Toggle Bit
timing diagram and Figure 27 for a flowchart.

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2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information

Data Protection

Product Identification

The SST49LF00xA device provides both hardware and
software features to protect nonvolatile data from inadvertent writes.

The product identification mode identifies the device as the
SST49LF00xA and manufacturer as SST.
TABLE 7: PRODUCT IDENTIFICATION

Hardware Data Protection
Byte

Data

JEDEC ID
Address
Location

0000H

BFH

FFBC0000H

SST49LF002A

0001H

57H

FFBC0001H

SST49LF003A

0001H

1BH

FFBC0001H

SST49LF004A

0001H

60H

FFBC0001H

SST49LF008A

0001H

5AH

FFBC0001H

Noise/Glitch Protection: A WE# pulse of less than 5 ns will
not initiate a Write cycle.
Manufacturer’s ID

VDD Power Up/Down Detection: The Write operation is
inhibited when VDD is less than 1.5V.

Device ID

Write Inhibit Mode: Forcing OE# low, WE# high will inhibit
the Write operation. This prevents inadvertent writes during
power-up or power-down.

T7.5 504

Software Data Protection (SDP)
The SST49LF00xA provides the JEDEC approved Software Data Protection scheme for all data alteration operation, i.e., Program and Erase. Any Program operation
requires the inclusion of a series of three-byte sequences.
The three-byte load sequence is used to initiate the Program operation, providing optimal protection from inadvertent Write operations, e.g., during the system power-up or
power-down. Any Erase operation requires the inclusion of
a six-byte load sequence. The SST49LF00xA device is
shipped with the Software Data Protection permanently
enabled. See Table 10 for the specific software command
codes. During SDP command sequence, invalid commands will abort the device to Read mode, within TRC.

Design Considerations
SST recommends a high frequency 0.1 µF ceramic capacitor
to be placed as close as possible between VDD and VSS less
than 1 cm away from the VDD pin of the device. Additionally, a
low frequency 4.7 µF electrolytic capacitor from VDD to VSS
should be placed within 1 cm of the VDD pin. If you use a
socket for programming purposes add an additional 1-10 µF
next to each socket.
The RST# pin must remain stable at VIH for the entire duration of an Erase operation. WP# must remain stable at VIH for
the entire duration of the Erase and Program operations for
non-Boot Block sectors. To write data to the top Boot Block
sectors, the TBL# pin must also remain stable at VIH for the
entire duration of the Erase and Program operations.

Electrical Specifications
The AC and DC specifications for the FWH Interface signals (FWH[3:0], CLK, FWH4, and RST#) as defined in
Section 4.2.2 of the PCI Local Bus Specification, Rev. 2.1.
Refer to Table 11 for the DC voltage and current specifications. Refer to the tables on pages 19 through 23 for the AC
timing specifications for Clock, Read/Write, and Reset
operations.

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2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information

System Memory
(Top 4 MByte)
FFFFFFFFH
SST49LF002A
(2 Mbit)
SST49LF003A
(3 Mbit)
SST49LF004A
(4 Mbit)

FFFC0000H

SST49LF008A
(8 Mbit)

FFFA0000H

FFF80000H

FFF00000H

Range for
Additional FWH Devices

FFC00000H
504 ILL B1A.3

BOOT-CONFIGURATION SYSTEM MEMORY MAP

FUNCTIONAL BLOCK DIAGRAM
TBL#
WP#
INIT#

X-Decoder

SuperFlash
Memory

FWH[3:0]
CLK
FWH4

FWH
Interface

Address Buffers & Latches
Y-Decoder

ID[3:0]
FGPI[4:0]
R/C#
A[10:0]
DQ[7:0]
OE#
WE#

Control Logic

I/O Buffers and Data Latches

Programmer
Interface
IC

RST#
504 ILL B1.2

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2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information

Block 15

TBL#

Block 14
Block 13
Block 12
Block 11
Block 10
Block 9

3FFFFH
Boot Block

3C000H
3BFFFH
38000H
37FFFH
34000H
33FFFH
30000H
2FFFFH
2C000H
2BFFFH
28000H
27FFFH
24000H
23FFFH

Block 8

WP# for
Block 0~14

20000H
1FFFFH
Block 7
1C000H
1BFFFH
Block 6
18000H
17FFFH
Block 5
14000H
13FFFH
Block 4
10000H
0FFFFH
Block 3
0C000H
0BFFFH
Block 2
Block 1

Block 0
(16 KByte)

08000H
07FFFH
04000H
03FFFH
300000
02FFFH
02000H
01FFFH
01000H
00FFFH
00000H

4 KByte Sector 3
4 KByte Sector 2
4 KByte Sector 1
4 KByte Sector 0
504 ILL F52.7

FIGURE 3: DEVICE MEMORY MAP

FOR

SST49LF002A

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SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information

7FFFFH
Boot Block

Block 7

TBL#

70000H
6FFFFH
Block 6
60000H
5FFFFH
Block 5
50000H
4FFFFH

WP# for
Block 2~6

Block 4
40000H
3FFFFH
Block 3
30000H
2F000H
Block 2

*Block 1
*Block 0
(64 KByte)

22000H
21000H
20000H
1FFFFH

4 KByte Sector 47

4 KByte Sector 34
4 KByte Sector 33
4 KByte Sector 32
Invalid Range

10000H
0FFFFH
Invalid Range

00000H
504 ILL F56.1

* operations to shaded area are not valid.

FIGURE 4: DEVICE MEMORY MAP

FOR

SST49LF003A

7FFFFH
Boot Block

Block 7

TBL#

70000H
6FFFFH
Block 6
60000H
5FFFFH
Block 5
50000H
4FFFFH
Block 4
40000H
3FFFFH

WP# for
Block 0~6

Block 3
30000H
2FFFFH
Block 2
20000H
1FFFFH
Block 1
10000H
0F000H
Block 0
(64 KByte)

02000H
01000H
00000H

4 KByte Sector 2
4 KByte Sector 1
4 KByte Sector 0
504 ILL F45.5

FIGURE 5: DEVICE MEMORY MAP

FOR

SST49LF004A

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SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information

Block 15

TBL#

Block 14
Block 13
Block 12
Block 11
Block 10
Block 9

0FFFFFH
Boot Block

0F0000H
0EFFFFH
0E0000H
0DFFFFH
0D0000H
0CFFFFH
0C0000H
0BFFFFH
0B0000H
0AFFFFH
0A0000H
09FFFFH
090000H
08FFFFH

Block 8

WP# for
Block 0~14

080000H
07FFFFH
Block 7
070000H
06FFFFH
Block 6
060000H
05FFFFH
Block 5
050000H
04FFFFH
Block 4
040000H
03FFFFH
Block 3
030000H
02FFFFH
Block 2
Block 1

Block 0
(64 KByte)

020000H
01FFFFH
010000H
00FFFFH

4 KByte Sector 15

002000H

4 KByte Sector 2

001000H

4 KByte Sector 1

000000H

4 KByte Sector 0
504 ILL F57.0

FIGURE 6: DEVICE MEMORY MAP

FOR

SST49LF008A

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SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information

NC
NC
NC
VSS (VSS)
IC (IC)
A10 (FGPI4)
R/C# (CLK)
VDD (VDD)
NC
RST# (RST#)
A9 (FGPI3)
A8 (FGPI2)
A7 (FGPI1)
A6 (FGPI0)
A5 (WP#)
A4 (TBL#)

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16

32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17

Standard Pinout
Top View
Die Up

OE# (INIT#)
WE# (FWH4)
VDD (VDD)
DQ7 (RES)
DQ6 (RES)
DQ5 (RES)
DQ4 (RES)
DQ3 (FWH3)
VSS (VSS)
DQ2 (FWH2)
DQ1 (FWH1)
DQ0 (FWH0)
A0 (ID0)
A1 (ID1)
A2 (ID2)
A3 (ID3)

504 ILL F01.4

( ) Designates FWH Mode

2

1

A10 (FGPI4)

3

R/C# (CLK)

NC

4

VDD (VDD)

RST# (RST#)

14MM)

A9 (FGPI3)

X

A8 (FGPI2)

FIGURE 7: PIN ASSIGNMENTS FOR 32-LEAD TSOP (8MM

32 31 30
29

5

A6 (FGPI0)

6

28

VSS (VSS)

A5 (WP#)

7

27

NC

A4 (TBL#)

8

26

NC

A3 (ID3)

9

25

VDD (VDD)

A2 (ID2)

10

24

OE# (INIT#)

A1 (ID1)

11

23

A0 (ID0)

12

22

WE# (FWH4)
NC

DQ0 (FWH0)

13

21
14 15 16 17 18 19 20
DQ5 (RES)

DQ4 (RES)

DQ3 (FWH3)

VSS (VSS)

DQ2 (FWH2)

DQ1 (FWH1)

( ) Designates FWH Mode

32-lead PLCC
Top View

DQ6 (RES)

A7(FGPI1)

IC (IC)

DQ7 (RES)

504 ILL F02.3

FIGURE 8: PIN ASSIGNMENTS FOR 32-LEAD PLCC

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SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
TABLE 8: PIN DESCRIPTION
Interface
Type1

PP

I

X

Inputs for low-order addresses during Read and Write operations.
Addresses are internally latched during a Write cycle. For the programming interface, these addresses are latched by R/C# and share
the same pins as the high-order address inputs.

I/O

X

To output data during Read cycles and receive input data during
Write cycles. Data is internally latched during a Write cycle. The outputs are in tri-state when OE# is high.

Symbol

Pin Name

A10-A0

Address

DQ7-DQ0

Data

OE#

Output Enable

I

X

To gate the data output buffers

WE#

Write Enable

I

X

To control the Write operations

IC

Interface
Configuration Pin

I

X

INIT#

Initialize

ID[3:0]

Identification Inputs

FWH Functions

X

This pin determines which interface is operational. When held high,
programmer mode is enabled and when held low, FWH mode is
enabled. This pin must be setup at power-up or before return from
reset and not change during device operation. This pin is internally
pulled- down with a resistor between 20-100 KΩ.

I

X

This is the second reset pin for in-system use. This pin is internally
combined with the RST# pin; If this pin or RST# pin is driven low,
identical operation is exhibited.

I

X

These four pins are part of the mechanism that allows multiple parts
to be attached to the same bus. The strapping of these pins is used
to identify the component.The boot device must have ID[3:0]=0000
and it is recommended that all subsequent devices should use
sequential up-count strapping. These pins are internally pulled-down
with a resistor between 20-100 KΩ.

FGPI[4:0] General Purpose Inputs

I

X

These individual inputs can be used for additional board flexibility.
The state of these pins can be read through GPI_REG register.
These inputs should be at their desired state before the start of the
PCI clock cycle during which the read is attempted, and should
remain in place until the end of the Read cycle. Unused GPI pins
must not be floated.

TBL#

I

X

When low, prevents programming to the Boot Block sectors at top of
memory. When TBL# is high it disables hardware write protection for
the top block sectors. This pin cannot be left unconnected.

Top Block Lock

FWH[3:0] FWH I/Os

I/O

X

I/O Communications

I

X

To provide a clock input to the control unit

CLK

Clock

FWH4

FWH Input

I

RST#

Reset

I

WP#

Write Protect

I

R/C#

Row/Column Select

I

X

RES

Reserved

VDD

Power Supply

PWR

X

VSS

Ground

PWR

X

X

Circuit ground (OV reference) All VSS pins must be grounded.

NC

No Connection

I

X

X

Unconnected pins

X

X

Input Communications

X

To reset the operation of the device

X

When low, prevents programming to all but the highest addressable
blocks. When WP# is high it disables hardware write protection for
these blocks. This pin cannot be left unconnected.
Select For the Programming interface, this pin determines whether
the address pins are pointing to the row addresses, or to the column
addresses.

X

These pins must be left unconnected.

X

To provide power supply (3.0-3.6V)

T8.4 504

1. I = Input, O = Output

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2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
TABLE 9: OPERATION MODES SELECTION (PP MODE)
Mode

RST#

OE#

WE#

DQ

Address

Read

VIH
VIH
VIH

VIL

VIH

DOUT

AIN

VIH
VIH

VIL

DIN

AIN

VIL

X1

Sector or Block address,
XXH for Chip-Erase

Program
Erase
Reset

VIL

X

X

High Z

X

Write Inhibit

VIH

VIL

X

High Z/DOUT

X

X

X

X

VIH

VIL

VIH
VIH

High Z/DOUT

Product Identification

Manufacturer’s ID (BFH)
Device ID2

A18-A1=VIL, A0=VIL
A18-A1=VIL, A0=VIH
T9.5 504

1. X can be VIL or VIH, but no other value.
2. Device ID 57H for SST49LF002A, 1BH for SST49LF003A, 60H for SST49LF004A, and 5AH for SST49LF008A

TABLE 10: SOFTWARE COMMAND SEQUENCE
1st1
Write Cycle

2nd1
Write Cycle

Addr2

Data

Addr2

Data Addr2

Data Addr2

Data

Byte-Program

5555H

AAH

2AAAH

55H

5555H

A0H

BA3

Data

Sector-Erase

5555H

AAH

2AAAH

55H

5555H

80H

5555H

Block-Erase

5555H

AAH

2AAAH

55H

5555H

80H

Chip-Erase6

5555H

AAH

2AAAH

55H

5555H

80H

Software ID Entry7,8

5555H

AAH

2AAAH

55H

5555H

90H

2AAAH

55H

5555H

F0H

Command Sequence

Software ID Exit9

XXH

F0H

Software ID Exit9

5555H

AAH

3rd1
Write Cycle

4th1
Write Cycle

5th1
Write Cycle

6th1
Write Cycle

Addr2

Data Addr2

Data

AAH

2AAAH

55H

SAX4

30H

5555H

AAH

2AAAH

55H

BAX5

50H

5555H

AAH

2AAAH

55H

5555H

10H

T10.5 504

1. FWH Mode uses consecutive Write cycles to complete a command sequence; PP Mode uses consecutive bus cycles to complete a
command sequence.
2. Address format A14-A0 (Hex), Addresses A21-A15 can be VIL or VIH, but no other value, for the Command sequence in PP Mode.
3. BA = Program Byte address
4. SAX for Sector-Erase Address
5. BAX for Block-Erase Address
6. Chip-Erase is supported in PP Mode only
7. SST Manufacturer’s ID = BFH, is read with A0=0,
With A17-A1 = 0; 49LF002A Device ID = 57H, is read with A0 = 1.
With A18-A1 = 0; 49LF003A Device ID = 1BH, is read with A0 = 1.
With A18-A1 = 0; 49LF004A Device ID = 60H, is read with A0 = 1.
With A19-A1 = 0; 49LF008A Device ID = 5AH, is read with A0 = 1.
8. The device does not remain in Software Product ID mode if powered down.
9. Both Software ID Exit operations are equivalent

©2002 Silicon Storage Technology, Inc.

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SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (Ta=25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Do not violate processor or chipset limitations on the INIT# pin.
2. Outputs shorted for no more than one second. No more than one output shorted at a time. This note applies to non-PCI outputs.

OPERATING RANGE
Range
Commercial

AC CONDITIONS

Ambient Temp

VDD

0°C to +85°C

3.0-3.6V

OF

TEST1

Input Rise/Fall Time . . . . . . . . . . . . . . . 3 ns
Output Load . . . . . . . . . . . . . . . . . . . . . CL = 30 pF
See Figures 24 and 25
1. FWH interface signals use PCI load test conditions

TABLE 11: DC OPERATING CHARACTERISTICS (ALL INTERFACES)
Limits
Symbol

Parameter

Min

Max

Units

Address input=VIL/VIH, at F=1/TRC Min,
VDD=VDD Max (PP Mode)

Active VDD Current

IDD

Test Conditions1

Read

12

Write2

mA

OE#=VIH, WE#=VIH

24

mA

OE#=VIH, VDD=VDD Max (PP Mode)

ISB

Standby VDD Current
(FWH Interface)

100

µA

FWH4=0.9VDD, f=33 MHz VDD=VDD Max, All
other inputs ≥ 0.9 VDD or ≤ 0.1 VDD

IRY3

Ready Mode VDD Current
(FWH Interface)

10

mA

FWH4=VIL, f=33 MHz VDD=VDD Max
All other inputs ≥ 0.9 VDD or ≤ 0.1 VDD

II

Input Current for IC,
ID [3:0] pins

200

µA

VIN=GND to VDD, VDD=VDD Max

ILI

Input Leakage Current

1

µA

VIN=GND to VDD, VDD=VDD Max

ILO

Output Leakage Current

1

µA

VOUT=GND to VDD, VDD=VDD Max

VIHI

4

INIT# Input High Voltage

1.0

VDD+0.5

V

VDD=VDD Max

VILI4

INIT# Input Low Voltage

-0.5

0.4

V

VDD=VDD Min

VIL

Input Low Voltage

-0.5

0.3 VDD

V

VDD=VDD Min

VIH

Input High Voltage

0.5 VDD

VDD+0.5

V

VDD=VDD Max

VOL

Output Low Voltage

0.1 VDD

V

IOL=1500µA, VDD=VDD Min

VOH

Output High Voltage

V

IOH=-500 µA, VDD=VDD Min

0.9 VDD

T11.9 504

1.
2.
3.
4.

Test conditions apply to PP mode.
IDD active while Erase or Program is in progress.
The device is in Ready Mode when no activity is on the FWH bus.
Do not violate processor or chipset specification regarding INIT# voltage.

©2002 Silicon Storage Technology, Inc.

S71161-06-000 2/02

18

504

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SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
TABLE 12: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol

Parameter

Minimum

Units

TPU-READ1

Power-up to Read Operation

100

µs

Power-up to Write Operation

100

µs

TPU-WRITE

1

T12.2 504

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter

TABLE 13: PIN IMPEDANCE

(VDD=3.3V, Ta=25 °C, f=1 Mhz, other pins open)

Parameter

Description

Test Condition

Maximum

CI/O1

I/O Pin Capacitance

VI/O = 0V

12 pF

Input Capacitance

VIN = 0V

CIN

1

LPIN2

12 pF

Pin Inductance

20 nH
T13.4 504

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. Refer to PCI spec.

TABLE 14: RELIABILITY CHARACTERISTICS
Symbol
NEND

1

Parameter

Minimum Specification

Units

Endurance

10,000

Cycles

JEDEC Standard A117

100

Years

JEDEC Standard A103

100 + IDD

mA

TDR1

Data Retention

ILTH1

Latch Up

Test Method

JEDEC Standard 78
T14.3 504

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 15: CLOCK TIMING PARAMETERS
Symbol

Parameter

Min

Max

Units

TCYC

CLK Cycle Time

30

ns

THIGH

CLK High Time

11

ns

TLOW

CLK Low Time

11

-

CLK Slew Rate (peak-to-peak)

1

-

RST# or INIT# Slew Rate

50

ns
4

V/ns
mV/ns
T15.1 504

Tcyc
Thigh
0.6 VDD
Tlow

0.5 VDD

0.4 VDD p-to-p
(minimum)

0.4 VDD
0.3 VDD
0.2 VDD

504 ILL F27.0

FIGURE 9: CLK WAVEFORM

©2002 Silicon Storage Technology, Inc.

S71161-06-000 2/02

19

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AC CHARACTERISTICS (FWH MODE)
TABLE 16: READ/WRITE CYCLE TIMING PARAMETERS (FWH MODE), VDD =3.0-3.6V
Symbol

Parameter

Min

Max

Units

TCYC

Clock Cycle Time

30

ns

TSU

Data Set Up Time to Clock Rising

7

ns

TDH

Clock Rising to Data Hold Time

0

TVAL1

Clock Rising to Data Valid

2

TBP

Byte Programming Time

20

µs

TSE

Sector-Erase Time

25

ms

TBE

Block-Erase Time

25

ms

TSCE

Chip-Erase Time

100

ms

TON

Clock Rising to Active (Float to Active Delay)

TOFF

Clock Rising to Inactive (Active to Float Delay)

ns
11

ns

2

ns
28

ns
T16.3 504

1. Minimum and maximum times have different loads. See PCI spec.

TABLE 17: AC INPUT/OUTPUT SPECIFICATIONS (FWH MODE)
Symbol

Parameter

IOH(AC)

Switching Current High

Min

Max

Units

-12 VDD
-17.1(VDD-VOUT)

mA
mA

0 < VOUT ≤ 0.3VDD
0.3VDD < VOUT < 0.9VDD
0.7VDD < VOUT VOUT ≥0.6VDD
0.6VDD > VOUT > 0.1VDD
0.18VDD > VOUT > 0

mA

VOUT=0.18VDD

Equation C1
(Test Point)
IOL(AC)

Switching Current Low

-32 VDD
16 VDD
26.7 VOUT

(Test Point)

Equation

D1

38 VDD

Conditions

ICL

Low Clamp Current

-25+(VIN+1)/0.015

mA

-3 < VIN ≤ -1

ICH

High Clamp Current

25+(VIN-VDD-1)/0.015

mA

VDD+4 > VIN ≤ VDD+1

slewr2

Output Rise Slew Rate

1

4

V/ns

0.2VDD-0.6VDD load

slewf2

Output Fall Slew Rate

1

4

V/ns

0.6VDD-0.2VDD load
T17.3 504

1. See PCI spec.
2. PCI specification output load is used.

TABLE 18: RESET TIMING PARAMETERS, VDD =3.0-3.6V (FWH MODE)
Symbol

Parameter

Min

Max

Units

TPRST

VDD stable to Reset Low

1

ms

TKRST

Clock Stable to Reset Low

100

µs

TRSTP

RST# Pulse Width

100

TRSTF

RST# Low to Output Float

TRST1

RST# High to FWH4 Low

TRSTE

RST# Low to reset during Sector-/Block-Erase or Program

ns
48

ns

10

µs

1

µs
T18.5 504

1. There will be a latency of TRSTE if a reset procedure is performed during a Program or Erase operation.

©2002 Silicon Storage Technology, Inc.

S71161-06-000 2/02

20

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VDD

TPRST

CLK
TKRST
TRSTP

RST#/INIT#

TRSTE
TRSTF

TRST

Sector-/Block-Erase
or Program operation
aborted

FWH[3:0]

FWH4
504 ILL F51.1

FIGURE 10: RESET TIMING DIAGRAM

VTH
CLK

VTEST
VTL
TVAL

FWH [3:0]
(Valid Output Data)

FWH [3:0]
(Float Output Data)

TON
TOFF

504 ILL F49.1

FIGURE 11: OUTPUT TIMING PARAMETERS

©2002 Silicon Storage Technology, Inc.

S71161-06-000 2/02

21

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VTH
VTEST

CLK

VTL
TSU
TDH
FWH [3:0]
(Valid Input Data)

Inputs
Valid

VMAX
504 ILL F50.1

FIGURE 12: INPUT TIMING PARAMETERS

TABLE 19: INTERFACE MEASUREMENT CONDITION PARAMETERS
Symbol

Value

Units

VTH1

0.6 VDD

V

1

0.2 VDD

V

VTEST

0.4 VDD

V

1

0.4 VDD

V

VTL

VMAX

Input Signal Edge Rate

1 V/ns
T19.3 504

1. The input test environment is done with 0.1 VDD of overdrive over VIH and VIL. Timing parameters must be met with no more
overdrive than this. VMAX specified the maximum peak-to-peak waveform allowed for measuring input timing. Production testing
may use different voltage values, but must correlate results back to these parameters.

©2002 Silicon Storage Technology, Inc.

S71161-06-000 2/02

22

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AC CHARACTERISTICS (PP MODE)
TABLE 20: READ CYCLE TIMING PARAMETERS VDD =3.0-3.6V (PP MODE)
Symbol

Parameter

Min

Max

Units

270

ns

1

µs

TRC

Read Cycle Time

TRST

RST# High to Row Address Setup

TAS

R/C# Address Set-up Time

45

ns

TAH

R/C# Address Hold Time

45

ns

TAA

Address Access Time

120

ns

TOE

Output Enable Access Time

60

ns

TOLZ

OE# Low to Active Output

TOHZ

OE# High to High-Z Output

TOH

Output Hold from Address Change

0

ns
35

ns

0

ns
T20.2 504

TABLE 21: PROGRAM/ERASE CYCLE TIMING PARAMETERS VDD =3.0-3.6V (PP MODE)
Symbol

Parameter

Min

Max

Units

TRST

RST# High to Row Address Setup

1

µs

TAS

R/C# Address Setup Time

50

ns

TAH

R/C# Address Hold Time

50

ns

TCWH

R/C# to Write Enable High Time

50

ns

TOES

OE# High Setup Time

20

ns

TOEH

OE# High Hold Time

20

ns

TOEP

OE# to Data# Polling Delay

40

ns

TOET

OE# to Toggle Bit Delay

40

ns

TWP

WE# Pulse Width

100

ns

TWPH

WE# Pulse Width High

100

ns

TDS

Data Setup Time

50

ns

TDH

Data Hold Time

5

ns

TIDA

Software ID Access and Exit Time

150

ns

TBP

Byte Programming Time

20

µs

TSE

Sector-Erase Time

25

ms

TBE

Block-Erase Time

25

ms

TSCE

Chip-Erase Time

100

ms
T21.2 504

TABLE 22: RESET TIMING PARAMETERS, VDD =3.0-3.6V (PP MODE)
Symbol

Parameter

Min

Max

Units

TPRST

VDD stable to Reset Low

TRSTP

RST# Pulse Width

1

ms

100

ns

TRSTF

RST# Low to Output Float

TRST1

RST# High to Row Address Setup

TRSTE

RST# Low to reset during Sector-/Block-Erase or Program

10

µs

TRSTC

RST# Low to reset during Chip-Erase

50

µs

48

ns

1

µs

T22.1 504

1. There will be a reset latency of TRSTE or TRSTC if a reset procedure is performed during a Program or Erase operation.
©2002 Silicon Storage Technology, Inc.

S71161-06-000 2/02

23

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VDD

TPRST

Addresses

Row Address

R/C#

TRSTP

RST#

Sector-/Block-Erase
or Program operation
aborted

TRSTE

TRSTC
TRST

TRSTF

Chip-Erase
aborted

DQ7-0
504 ILL F58.0

FIGURE 13: RESET TIMING DIAGRAM

RST#

TRSTP
TRST

TRC
Row Address

Addresses

TAS

TAH

Column Address

Row Address

Column Address

TAH

TAS

R/C#
WE#

VIH
TAA
TOH

OE#
TOE
TOLZ

DQ7-0

High-Z

TOHZ
Data Valid

High-Z
504 ILL F28.2

FIGURE 14: READ CYCLE TIMING DIAGRAM (PP MODE)

©2002 Silicon Storage Technology, Inc.

S71161-06-000 2/02

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TRSTP

RST#

TRST
Row Address

Addresses

TAS

Column Address

TAH

TAS

TAH

R/C#
TCWH

OE#

TOES

TWP

TOEH

TWPH

WE#
TDS

DQ7-0

TDH

Data Valid
504 ILL F29.2

FIGURE 15: WRITE CYCLE TIMING DIAGRAM (PP MODE)

Addresses

Row

Column

R/C#

WE#

OE#
TOEP

DQ7

D

D#

D#

D
504 ILL F54.2

FIGURE 16: DATA# POLLING TIMING DIAGRAM (PP MODE)

©2002 Silicon Storage Technology, Inc.

S71161-06-000 2/02

25

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Row

Addresses

Column

R/C#

WE#

OE#
TOET

DQ6

D

D
504 ILL F55.0

FIGURE 17: TOGGLE BIT TIMING DIAGRAM (PP MODE)

Four-Byte Code for Byte-Program
Addresses
5555

2AAA

5555

BA

R/C#

OE#
TBP

TWP

WE#

TWPH

SB0

DQ7-0

AA

SB1

SB2

55

A0

BA = Byte-Program Address

SB3

Internal Program Starts

Data

504 ILL F53.0

FIGURE 18: BYTE-PROGRAM TIMING DIAGRAM (PP MODE)

©2002 Silicon Storage Technology, Inc.

S71161-06-000 2/02

26

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Six-Byte code for
Sector-Erase Operation

Addresses
5555

2AAA

5555

5555

2AAA

SAx

R/C#

OE#
TWP

WE#

TSE
TWPH

SB0
DQ7-0

SB1

AA

55

SB2

SB3

80

SB4

AA

Internal Erasure Starts

SB5

55

30
504 ILL F32.1

SAx = Sector Address

FIGURE 19: SECTOR-ERASE TIMING DIAGRAM (PP MODE)

Six-Byte code for
Block-Erase Operation

Addresses
5555

2AAA

5555

5555

2AAA

BAx

R/C#

OE#
TWP

WE#
SB0
DQ7-0

TBE
TWPH

AA

SB1
55

SB2
80

SB3
AA

SB4
55

SB5

Internal Erasure Starts

50
504 ILL F48.1

BAx = Block Address

FIGURE 20: BLOCK-ERASE TIMING DIAGRAM (PP MODE)

©2002 Silicon Storage Technology, Inc.

S71161-06-000 2/02

27

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Six-Byte code for Chip-Erase Operation

Addresses
5555

2AAA

5555

5555

2AAA

5555

R/C#

OE#
TWP

WE#

TSCE
TWPH

DQ7-0

SB0

SB1

SB2

SB3

SB4

SB5

AA

55

80

AA

55

10

Internal Erasure Starts

504 ILL F33.1

FIGURE 21: CHIP-ERASE TIMING DIAGRAM (PP MODE)

Three-byte sequence for
Software ID Entry
Addresses
5555

2AAA

5555

0000

0001

R/C#

OE#
TIDA

TWP
WE#

TAA

TWPH
DQ7-0

AA

55

90

SW0

SW1

SW2

BF

Device ID
504 ILL F34.5

Device ID = 57H for SST49LF002A, 1BH for SST49LF003A,
60H for SST49LF004A, 5AH for SST49LF008A

FIGURE 22: SOFTWARE ID ENTRY

AND

READ (PP MODE)

©2002 Silicon Storage Technology, Inc.

S71161-06-000 2/02

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Three-Byte Sequence for
Software ID Exit and Reset

Addresses
2AAA

5555

5555

R/C#

OE#
TWP
WE#
TIDA

TWPH
SW0
DQ7-0

AA

SW1
55

SW2
F0
504 ILL F35.2

FIGURE 23: SOFTWARE ID EXIT AND RESET (PP MODE)

VIHT
INPUT

VIT

REFERENCE POINTS

VOT

OUTPUT

VILT
504 ILL F06.1

AC test inputs are driven at VIHT (0.9 VDD) for a logic “1” and VILT (0.1 VDD) for a logic “0”. Measurement reference points
for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise and fall times (10% ↔ 90%) are <5 ns.
Note: VIT - VINPUT Test
VOT - VOUTPUT Test
VIHT - VINPUT HIGH Test
VILT - VINPUT LOW Test

FIGURE 24: AC INPUT/OUTPUT REFERENCE WAVEFORMS (PP MODE)

TO TESTER

TO DUT
CL
504 ILL F07.0

FIGURE 25: A TEST LOAD EXAMPLE (PP MODE)
©2002 Silicon Storage Technology, Inc.

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Start

Write data: AAH
Address: 5555H

Write data: 55H
Address: 2AAAH

Write data: A0H
Address: 5555H

Load Byte
Address/Byte
Data

Wait for end of
Program (TBP,
Data# Polling
bit, or Toggle bit
operation)
Program
Completed
504 ILL F36.1

FIGURE 26: BYTE-PROGRAM ALGORITHM

©2002 Silicon Storage Technology, Inc.

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Internal Timer

Toggle Bit

Data# Polling

ByteProgram/Erase
Initiated

ByteProgram/Erase
Initiated

ByteProgram/Erase
Initiated

Wait TBP,
TSCE, TBE
or TSE

Read byte

Read DQ7

Read same
byte

Program/Erase
Completed

No

Is DQ7 =
true data?
Yes

No

Does DQ6
match?

Program/Erase
Completed

Yes

Program/Erase
Completed
504 ILL F37.0

FIGURE 27: WAIT OPTIONS

©2002 Silicon Storage Technology, Inc.

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Software Product ID Entry
Command Sequence

Software Product ID Exit &
Reset Command Sequence

Write data: AAH
Address: 5555H

Write data: AAH
Address: 5555H

Write data: F0H
Address: XXH

Write data: 55H
Address: 2AAAH

Write data: 55H
Address: 2AAAH

Wait TIDA

Write data: 90H
Address: 5555H

Write data: F0H
Address: 5555H

Return to normal
operation

Wait TIDA

Wait TIDA

Read Software ID

Return to normal
operation
504 ILL F38.1

FIGURE 28: SOFTWARE PRODUCT COMMAND FLOWCHARTS

©2002 Silicon Storage Technology, Inc.

S71161-06-000 2/02

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Chip-Erase
Command Sequence

Block-Erase
Command Sequence

Sector-Erase
Command Sequence

Write data: AAH
Address: 5555H

Write data: AAH
Address: 5555H

Write data: AAH
Address: 5555H

Write data: 55H
Address: 2AAAH

Write data: 55H
Address: 2AAAH

Write data: 55H
Address: 2AAAH

Write data: 80H
Address: 5555H

Write data: 80H
Address: 5555H

Write data: 80H
Address: 5555H

Write data: AAH
Address: 5555H

Write data: AAH
Address: 5555H

Write data: AAH
Address: 5555H

Write data: 55H
Address: 2AAAH

Write data: 55H
Address: 2AAAH

Write data: 55H
Address: 2AAAH

Write data: 10H
Address: 5555H

Write data: 50H
Address: BAX

Write data: 30H
Address: SAX

Wait Options

Wait Options

Wait Options

Chip erased
to FFH

Block erased
to FFH

Sector erased
to FFH
504 ILL F39.1

FIGURE 29: ERASE COMMAND SEQUENCE

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PRODUCT ORDERING INFORMATION
Device

Speed

SST49LF00xA - XXX

Suffix1
-

XX

Suffix2
-

XX
Package Modifier
H = 32 leads
Package Type
N = PLCC
W = TSOP (type 1, die up, 8mm x 14mm)
Operating Temperature
C = Commercial = 0°C to +85°C
Minimum Endurance
4 = 10,000 cycles
Serial Access Clock Frequency
33 = 33 MHz
Version
Device Density
008 = 8 Mbit
004 = 4 Mbit
003 = 3 Mbit
002 = 2 Mbit
Voltage Range
L = 3.0-3.6V

Valid combinations for SST49LF002A
SST49LF002A-33-4C-WH

SST49LF002A-33-4C-NH

Valid combinations for SST49LF003A
SST49LF003A-33-4C-WH

SST49LF003A-33-4C-NH

Valid combinations for SST49LF004A
SST49LF004A-33-4C-WH

SST49LF004A-33-4C-NH

Valid combinations for SST49LF008A
SST49LF008A-33-4C-WH
Note:

SST49LF008A-33-4C-NH

Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations and to determine availability of new combinations.

©2002 Silicon Storage Technology, Inc.

S71161-06-000 2/02

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PACKAGING DIAGRAMS

TOP VIEW
Optional
Pin #1
Identifier .048
.042

SIDE VIEW

.495
.485
.453
.447
2

1

32

.112
.106
.020 R.
MAX.

.029 x 30˚
.023

.040 R.
.030

.042
.048
.595 .553
.585 .547

BOTTOM VIEW

.021
.013
.400 .530
BSC .490

.032
.026

.050
BSC
.015 Min.
.095
.075

.050
BSC

.140
.125

.032
.026

Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent.
2. All linear dimensions are in inches (max/min).
3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches.
4. Coplanarity: 4 mils.

32-plcc-NH-3

32-LEAD PLASTIC LEAD CHIP CARRIER (PLCC)
SST PACKAGE CODE: NH

©2002 Silicon Storage Technology, Inc.

S71161-06-000 2/02

35

504

2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information

1.05
0.95

Pin # 1 Identifier

0.50
BSC

8.10
7.90

0.27
0.17

0.15
0.05

12.50
12.30
DETAIL
1.20
max.
0.70
0.50

14.20
13.80
0˚- 5˚
0.70
0.50

Note:

1. Complies with JEDEC publication 95 MO-142 BA dimensions,
although some dimensions may be more stringent.
1mm
2. All linear dimensions are in millimeters (max/min).
3. Coplanarity: 0.1 mm
4. Maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads.

32-LEAD THIN SMALL OUTLINE PACKAGE (TSOP) 8MM
SST PACKAGE CODE: WH

X

32-tsop-WH-7

14MM

Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036
www.SuperFlash.com or www.sst.com
©2002 Silicon Storage Technology, Inc.

S71161-06-000 2/02

36

504

www.s-manuals.com



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