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INTEGRATED CIRCUITS

DATA SHEET

TDA6108JF
Triple video output amplifier
Product specification
Supersedes data of 1998 Jun 22
File under Integrated Circuits, IC02

1999 Oct 29

Philips Semiconductors

Product specification

Triple video output amplifier

TDA6108JF

FEATURES

• Black-Current Stabilization (BCS) circuit

• Typical bandwidth of 9.0 MHz for an output signal of
60 V (p-p)

• Thermal protection.

• High slew rate of 1850 V/µs

GENERAL DESCRIPTION

• No external components required

The TDA6108JF includes three video output amplifiers in
one plastic DIL-bent-SIL 9-pin medium power (DBS9MPF)
package (SOT111-1), using high-voltage DMOS
technology, and is intended to drive the three cathodes of
a colour CRT directly. To obtain maximum performance,
the amplifier should be used with black-current control.

• Very simple application
• Single supply voltage of 200 V
• Internal reference voltage of 2.5 V
• Fixed gain of 51
ORDERING INFORMATION

PACKAGE

TYPE
NUMBER

NAME

TDA6108JF

DBS9MPF

DESCRIPTION

VERSION

plastic DIL-bent-SIL medium power package with fin; 9 leads

SOT111-1

BLOCK DIAGRAM

VDD

handbook, full pagewidth

6
MIRROR 5

MIRROR 1

TDA6108JF

CASCODE 1

3×

MIRROR 4
CURRENT
SOURCE

9, 8, 7

1×

Voc(3),
Voc(2),
Voc(1)

1×
THERMAL
PROTECTION
CIRCUIT
Vi(1),
Vi(2),
Vi(3)

1, 2, 3

Rf
VIP
REFERENCE

DIFFERENTIAL
STAGE

5

MIRROR 3
Ri
Ra

3×

CASCODE 2

MIRROR 2
4
MGL318

Fig.1 Block diagram (one amplifier shown).

1999 Oct 29

2

Io(m)

Philips Semiconductors

Product specification

Triple video output amplifier

TDA6108JF

PINNING
SYMBOL

PIN

DESCRIPTION

Vi(1)

1

inverting input 1

Vi(2)

2

inverting input 2

Vi(3)

3

handbook, halfpage

Vi(1)

1

inverting input 3

Vi(2)

2
3
4

GND

4

ground (fin)

Vi(3)

Iom

5

black current measurement output

GND

VDD

6

supply voltage

Voc(3)

7

cathode output 3

Voc(2)

8

cathode output 2

Voc(1)

9

cathode output 1

Iom

5 TDA6108JF

VDD

6

Voc(3)

7

Voc(2)

8

Voc(1)

9
MGL319

Fig.2 Pin configuration.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages measured with respect to pin 4 (ground);
currents as specified in Fig.1; unless otherwise specified.
SYMBOL

PARAMETER

MIN.

MAX.

UNIT

VDD

supply voltage

0

250

V

Vi

input voltage

0

12

V

Vom

measurement output voltage

0

6

V

Voc

cathode output voltage

0

VDD

V

Tstg

storage temperature

−55

+150

°C

Tj

junction temperature

−20

+150

°C

Ves

electrostatic handling
human body model (HBM)

−

2000

V

machine model (MM)

−

300

V

HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices (see “Handling MOS Devices” ).
QUALITY SPECIFICATION
Quality specification “SNW-FQ-611 part D” is applicable.

1999 Oct 29

3

Philips Semiconductors

Product specification

Triple video output amplifier

TDA6108JF

THERMAL CHARACTERISTICS
SYMBOL

PARAMETER

CONDITIONS

Rth(j-a)

thermal resistance from junction to ambient

Rth(j-fin)

thermal resistance from junction to fin

Rth(h-a)

thermal resistance from heatsink to ambient

VALUE

note 1

UNIT

56

K/W

11

K/W

10

K/W

Note
1. An external heatsink is necessary.
Thermal protection
The internal thermal protection circuit gives a decrease of
the slew rate at high temperatures: 10% decrease at
130 °C and 30% decrease at 145 °C (typical values on the
spot of the thermal protection circuit).

MGL322

8

handbook, halfpage

Ptot
(W)
(1)

6

4

(2)

handbook, halfpage

2

outputs
5 K/W
thermal protection circuit

0
−20

20

60

100

6 K/W

180
140
Tamb (°C)

fin

MGK279

(1) Infinite heatsink.
(2) No heatsink.

Fig.4 Equivalent thermal resistance network.

Fig.3 Power derating curves.

1999 Oct 29

4

Philips Semiconductors

Product specification

Triple video output amplifier

TDA6108JF

CHARACTERISTICS
Operating range: Tj = −20 to +150 °C; VDD = 180 to 210 V. Test conditions: Tamb = 25 °C; VDD = 200 V;
Vo(c1) = Vo(c2) = Vo(c3) = 1⁄2VDD; CL = 10 pF (CL consists of parasitic and cathode capacitance); Rth(h-a) = 18 K/W
(measured in test circuit of Fig.8); unless otherwise specified.
SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Iq

quiescent supply current

8.8

10.3

11.7

mA

Vref(int)

internal reference voltage
(input stage)

−

2.5

−

V

Ri

input resistance

−

3.2

−

kΩ

G

gain of amplifier

47.5

51.0

55.0

∆G

gain difference

−2.5

0

+2.5

VO(c)

nominal output voltage at
pins 7, 8 and 9 (DC value)

Ii = 0 µA

116

129

142

V

∆VO(c)(offset)

differential nominal output
offset voltage between
pins 7 and 8, 8 and 9 and
9 and 7 (DC value)

Ii = 0 µA

−

0

5

V

∆Vo(c)(T)

output voltage temperature
drift at pins 7, 8 and 9

−

−10

−

mV/K

−

0

−

mV/K

−50

−

+50

µA

0.9

1.0

1.1

∆Vo(c)(T)(offset) differential output offset
voltage temperature drift
between pins 7 and 8,
8 and 9 and 7 and 9
Io(m)(offset)

offset current of measurement Io(c) = 0 µA;
output (for 3 channels)
1.5 V < Vi < 5.5 V;
3 V < Vo(m) < 6 V

∆Io(m)/∆Io(c)

linearity of current transfer

Io(c)(max)

maximum peak output current 50 V < Vo(c) < VDD − 50 V
(pins 7, 8 and 9)

−

28

−

mA

Vo(c)(min)

minimum output voltage
(pins 7, 8 and 9)

Vi = 7.0 V; note 1

−

−

10

V

Vo(c)(max)

maximum output voltage
(pins 7, 8 and 9)

Vi = 1.0 V; note 1

VDD − 15 −

−

V

BS

small signal bandwidth
(pins 7, 8 and 9)

Vo(c) = 60 V (p-p)

−

9.0

−

MHz

BL

large signal bandwidth
(pins 7, 8 and 9)

Vo(c) = 100 V (p-p)

−

8.0

−

MHz

tPco

cathode output propagation
time 50% input to 50% output
(pins 7, 8 and 9)

Vo(c) = 100 V (p-p)
square wave; f <1 MHz;
tr = tf = 40 ns
(pins 1, 2 and 3);
see Figs 6 and 7

−

32

−

ns

1999 Oct 29

−100 µA < Io(c) < 100 µA;
1.5 V < Vi < 5.5 V;
3 V < Vo(m) < 6 V

5

Philips Semiconductors

Product specification

Triple video output amplifier

SYMBOL

PARAMETER

TDA6108JF

CONDITIONS

MIN.

TYP.

MAX.

UNIT

∆tPco

difference in cathode output
propagation time 50% input to
50% output (pins 7 and 8,
7 and 9 and 8 and 9)

Vo(c) = 100 V (p-p)
square wave; f < 1 MHz;
tr = tf = 40 ns
(pins 1, 2 and 3)

−10

0

+10

ns

to(r)

cathode output rise time
10% output to 90% output
(pins 7, 8 and 9)

Vo(c) = 50 to 150 V square
wave; f < 1 MHz; tf = 40 ns
(pins 1, 2 and 3); see Fig.6

35

50

65

ns

to(f)

cathode output fall time
90% output to 10% output
(pins 7, 8 and 9)

Vo(c) = 150 to 50 V square
wave; f < 1 MHz; tr = 40 ns
(pins 1, 2 and 3); see Fig.7

35

50

65

ns

tst

settling time 50% input to
99% < output < 101%
(pins 7, 8 and 9)

Vo(c) = 100 V (p-p)
square wave; f < 1 MHz;
tr = tf = 40 ns
(pins 1, 2 and 3);
see Figs 6 and 7

−

−

350

ns

SR

slew rate between
50 V to (VDD − 50 V)
(pins 7, 8 and 9)

Vi = 4 V (p-p) square wave;
f < 1 MHz; tr = tf = 40 ns
(pins 1, 2 and 3)

−

1850

−

V/µs

Ov

cathode output voltage
overshoot (pins 7, 8 and 9)

Vo(c) = 100 V (p-p)
square wave; f < 1 MHz;
tr = tf = 40 ns
(pins 1, 2 and 3);
see Figs 6 and 7

−

10

−

%

PSRR

power supply rejection ratio

f < 50 kHz; note 2

−

65

−

dB

αct(DC)

DC crosstalk between
channels

−

50

−

dB

Notes
1. See also Fig.5 for the typical DC-to-DC transfer of Vi to Vo(c).
2. The ratio of the change in supply voltage to the change in input voltage when there is no change in output voltage.

1999 Oct 29

6

Philips Semiconductors

Product specification

Triple video output amplifier

TDA6108JF

MGL371

200

handbook, halfpage

Vo(c)
(V)

160

129

120

80

40

0
0

2

2.5

4

Vi (V)

6

Fig.5 Typical DC-to-DC transfer of Vi to Vo(c).

1999 Oct 29

7

Philips Semiconductors

Product specification

Triple video output amplifier

TDA6108JF

4.18
Vi
(V)

3.09
t

2.00

tst
Ov (in %)

151

150
140
149

Vo(c)
(V)
100

60
50

t
to(r)
MGL369

tPco

Fig.6 Output voltage (pins 7, 8 and 9) rising edge as a function of the AC input signal.

1999 Oct 29

8

Philips Semiconductors

Product specification

Triple video output amplifier

TDA6108JF

4.18
Vi
(V)

3.09
t

2.00

tst

150
140
Vo(c)
(V)
100
Ov (in %)

51

60
50
49
t
to(f)
MGL370

tPco

Fig.7 Output voltage (pins 7, 8 and 9) falling edge as a function of the AC input signal.

1999 Oct 29

9

Philips Semiconductors

Product specification

Triple video output amplifier

TDA6108JF

External flashover protection

Dissipation

For sufficient flashover protection it is necessary to apply
an external diode and 100 Ω resistor for each channel.
See application note “Application and Product description
of TDA6107Q/N1” (report number AN96072).

Regarding dissipation, distinction must first be made
between static dissipation (independent of frequency) and
dynamic dissipation (proportional to frequency).
The static dissipation of the TDA6108JF is due to voltage
supply currents and load currents in the feedback network
and CRT.

To limit the diode current an external 1 kΩ carbon
high-voltage resistor in series with the external diode and
a 2 kV spark gap are needed (for this resistor value, the
CRT has to be connected to the main PCB).

The static dissipation Pstat equals:
P stat = V DD × I DD + 3 × V O(c) × I O(c)

VDD must be decoupled to GND:

Where:

1. With a capacitor >20 nF with good HF behaviour
(e.g. foil); this capacitor must be placed as close as
possible to pins 6 and 4, but definitely within 5 mm.

VDD = supply voltage
IDD = supply current

2. With a capacitor >3.3 µF on the picture tube base
print.

VO(c) = DC value of cathode voltage
IO(c) = DC value of cathode current.

Switch-off behaviour

The dynamic dissipation Pdyn equals:

The switch-off behaviour of the TDA6108JF is controllable.
This is due to the fact that the output pins of the
TDA6108JF are still under control of the input pins for low
power supply voltages (approximately 30 V and higher).

P dyn = 3 × V DD × ( C L + C int ) × f i × V o(c)(p-p) × δ
Where:
CL = load capacitance
Cint = internal load capacitance (≈4 pF)

Bandwidth

fi = input frequency

The addition of the flash resistor produces a decreased
bandwidth and increases rise and fall times. For further
information, see Application note of the TDA6108JF.

Vo(c)(p-p) = output voltage (peak-to-peak value)
δ = non-blanking duty cycle.
The IC must be mounted on the picture tube base print to
minimize the load capacitance CL.

1999 Oct 29

10

Philips Semiconductors

Product specification

Triple video output amplifier

TDA6108JF

TEST AND APPLICATION INFORMATION

VDD

handbook, full pagewidth

C1
Vi(1)

J1

22 µF

6

Rf
1

Ri

Vof

C2

1
Ra

C7
20 nF

Voc(1)

9

Iom

22 nF

C8
10 µF

C10
6.8 pF

R1
2 MΩ

C11
136 pF

R2
100 kΩ

C13
6.8 pF

R3
2 MΩ

C14
136 pF

R4
100 kΩ

C16
6.8 pF

R5
2 MΩ

C17
136 pF

R6
100 kΩ

C9
3.2 pF

C3
Vi(2)

J2

22 µF

Rf
2

Ri

Vof

C4

2
Ra

Voc(2)

8

Iom

22 nF

probe 1

C12
3.2 pF

C5
Vi(3)

22 µF

J3

Rf
3

Ri

Vof

C6

3
Ra

Voc(3)

7

Iom

22 nF

probe 2

C15
3.2 pF
VIP
REFERENCE

probe 3

5

TDA6108JF

Vo(m)

4

4V
MGL321

Current sources J1, J2 and J3 are to be tuned so that Vo(c) of pins 9, 8 and 7 is set to 100 V.

Fig.8 Test circuit.

1999 Oct 29

11

Philips Semiconductors

Product specification

Triple video output amplifier

TDA6108JF

INTERNAL CIRCUITRY

handbook, full pagewidth

to cascode
stage

GND

VDD

4

6
to black current
measurement circuit

TDA6108JF

1, 2, 3

(1)

esd

from
input
circuit

esd

flash
7, 8, 9

esd
to black current
measurement circuit
from
control
circuit

from
input
circuit

Vbias

esd

5
esd

6.8 V

esd

from
control
circuit

to black current
measurement circuit

to black current
measurement circuit

MGL320

(1) All pins have an energy protection for positive or negative overstress situations.

Fig.0 Internal pin configuration.

1999 Oct 29

12

Philips Semiconductors

Product specification

Triple video output amplifier

TDA6108JF

PACKAGE OUTLINE
DBS9MPF: plastic DIL-bent-SIL medium power package with fin; 9 leads

SOT111-1

D

D1
A2

q
P

P1

Q

A3
q2

q1

A

seating plane

A4

E

pin 1 index

c

L
1

9
e2

b

e

Z
b2

0

θ

w M

b1

5

10 mm

scale
DIMENSIONS (mm are the original dimensions)
UNIT

A

mm

18.5
17.8

A2
A3
max.
3.7

8.7
8.0

A4

b

b1

b2

c

D (1)

D1

E (1)

e

e2

15.5 1.40 0.67 1.40 0.48 21.8 21.4 6.48 2.54 2.54
15.1 1.14 0.50 1.14 0.38 21.4 20.7 6.20

L

P

P1

3.9
3.4

2.75
2.50

3.4
3.2

Q

q

1.75 15.1
1.55 14.9

q1

q2

w

Z (1)
max.

θ

4.4
4.2

5.9
5.7

0.25

1.0

65o
55o

Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION

REFERENCES
IEC

JEDEC

EIAJ

ISSUE DATE
92-11-17
95-03-11

SOT111-1

1999 Oct 29

EUROPEAN
PROJECTION

13

Philips Semiconductors

Product specification

Triple video output amplifier

TDA6108JF
The total contact time of successive solder waves must not
exceed 5 seconds.

SOLDERING
Introduction to soldering through-hole mount
packages

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

This text gives a brief insight to wave, dip and manual
soldering. A more in-depth account of soldering ICs can be
found in our “Data Handbook IC26; Integrated Circuit
Packages” (document order number 9398 652 90011).
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.

Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.

Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.

Suitability of through-hole mount IC packages for dipping and wave soldering methods
SOLDERING METHOD
PACKAGE
DIPPING
DBS, DIP, HDIP, SDIP, SIL

WAVE
suitable(1)

suitable

Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Oct 29

14

Philips Semiconductors

Product specification

Triple video output amplifier

TDA6108JF
NOTES

1999 Oct 29

15

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209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777

Internet: http://www.semiconductors.philips.com

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

SCA 68

© Philips Electronics N.V. 1999

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

545004/200/03/pp16

Date of release: 1999

Oct 29

Document order number:

9397 750 06486

www.s-manuals.com



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