Jorjin Technologies ZB7412 BLE wireless module User Manual 1

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http://WWW.JORJIN.COM.TW

a module solution provider

ZB7412-00

SimpleLinkTM Bluetooth® Low Energy

Wireless MCU Module

TI CC2640R2F Solution

Datasheet

Revision 0.3

Prepared By

Reviewed By

Approved By

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Index

1. OVERVIEW ....................................................................................................................................... 3

1.1. GENERAL FEATURES ........................................................................................................................ 3

1.2. APPLICATIONS ................................................................................................................................ 4

2. FUNCTIONAL FEATURES .................................................................................................................. 5

2.1. MODULE BLOCK DIAGRAM ............................................................................................................... 5

2.2. BLOCK FUNCTIONAL FEATURE ........................................................................................................... 6

Microcontroller ............................................................................................................................ 6

Ultra-Low Power Sensor Controller ............................................................................................ 6

Peripherals ................................................................................................................................... 6

RF Section .................................................................................................................................... 7

3. MODULE OUTLINE ........................................................................................................................... 8

3.1. SIGNAL LAYOUT (TOP VIEW) ............................................................................................................. 8

3.2. PIN DESCRIPTION ........................................................................................................................... 9

4. MODULE SPECIFICATIONS ............................................................................................................. 11

4.1. ABSOLUTE MAXIMUM RATINGS(1)(2) ................................................................................................. 11

4.2. ESD RATINGS .............................................................................................................................. 11

4.3. RECOMMENDED OPERATING CONDITIONS ......................................................................................... 12

4.4. POWER CONSUMPTION SUMMARY .................................................................................................. 13

4.5. GENERAL CHARACTERISTICS ............................................................................................................ 14

4.6. 125-KBPS CODED (BLUETOOTH 5) – RX .......................................................................................... 14

4.7. 125-KBPS CODED (BLUETOOTH 5) – TX .......................................................................................... 15

4.8. 500-KBPS CODED (BLUETOOTH 5) – RX .......................................................................................... 16

4.9. 500-KBPS CODED (BLUETOOTH 5) – TX .......................................................................................... 17

4.10. 1-MBPS GFSK (BLUETOOTH LOW ENERGY) – RX ............................................................................. 17

4.11. 1-MBPS GFSK (BLUETOOTH LOW ENERGY) – TX ............................................................................. 19

4.12. 2-MBPS GFSK (BLUETOOTH 5) – RX ............................................................................................. 19

4.13. 2-MBPS GFSK (BLUETOOTH 5) – TX ............................................................................................. 20

4.14. INTERNAL 24-MHZ CRYSTAL OSCILLATOR (XOSC_HF)(1) .................................................................. 20

4.15. 32.768-KHZ CRYSTAL OSCILLATOR (XOSC_LF) ............................................................................... 21

4.16. 48-MHZ RC OSCILLATOR (RCOSC_HF) ........................................................................................ 21

4.17. 32-KHZ RC OSCILLATOR (RCOSC_LF) .......................................................................................... 21

4.18. ADC CHARACTERISTICS(1) ............................................................................................................ 22

4.19. TEMPERATURE SENSOR ................................................................................................................ 23

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4.20. BATTERY MONITOR ..................................................................................................................... 24

4.21. CONTINUOUS TIME COMPARATOR ................................................................................................. 24

4.22. LOW-POWER CLOCKED COMPARATOR............................................................................................. 24

4.23. PROGRAMMABLE CURRENT SOURCE .............................................................................................. 25

4.24. DC CHARACTERISTICS .................................................................................................................. 25

4.25. TIMING REQUIREMENTS ............................................................................................................... 26

4.26. SWITCHING CHARACTERISTICS ....................................................................................................... 27

4.27. TYPICAL CHARACTERISTICS ............................................................................................................ 29

4.28. CHIP ANTENNA CHARACTERISTICS .................................................................................................. 30

5. DESIGN RECOMMENDATIONS ....................................................................................................... 32

5.1. MODULE LAYOUT RECOMMENDATIONS ............................................................................................ 32

5.2. REFERENCE SCHEMATIC ................................................................................................................. 34

6. PACKAGE INFORMATION ............................................................................................................... 35

6.1. MODULE MECHANICAL OUTLINE ..................................................................................................... 35

6.2. ORDERING INFORMATION............................................................................................................... 36

6.3. PACKAGE MARKING ...................................................................................................................... 37

7. SMT AND BAKING RECOMMENDATION ....................................................................................... 39

7.1. BAKING RECOMMENDATION ........................................................................................................... 39

7.2. SMT RECOMMENDATION .............................................................................................................. 39

8. TAPE REEL INFROMATION ............................................................................................................. 41

8.1. COVER / CARRIER TAPE DIMENSION ................................................................................................. 41

9. REGULATORY INFORMATION ........................................................................................................ 42

9.1. UNITED STATES ............................................................................................................................ 42

9.2. CANADA ..................................................................................................................................... 43

9.3. EUROPE ...................................................................................................................................... 44

9.4. JAPAN ........................................................................................................................................ 44

9.5. TAIWAN ...................................................................................................................................... 45

9.6. AUSTRALIA/NEW ZEALAND ............................................................................................................ 46

10. HISTORY CHANGE ........................................................................................................................ 47

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1. OVERVIEW

The certified ZB7412-00 module from JORJIN is a wireless MCU module targeting Bluetooth 4.2 and

Bluetooth 5 low energy applications. This module is based on TI CC2640R2F wireless MCU QFN-32

package chip.

The module is a cost-effective, ultralow power, 2.4-GHz RF devices. Very low active RF and MCU

current and low-power mode current consumption provide excellent battery lifetime and allow for

operation on small coin cell batteries and in energy-harvesting applications.

1.1. General Features

 TI CC2640R2F, 24MHz & 32.768KHz crystals, DC2DC, and chip antenna on a single module.

 Built-in TI CC2640R2F 5x5mm RHB VQFN32 (15 GPIOs)

 LGA 25pins package.

 Dimension 16.9mm(L) x 11mm(W) x 2.45mm(H)

 Powerful ARM® Cortex®-M3 Microcontroller

 Ultra-Low Power Sensor Controller

 Efficient Code Size Architecture, Placing Drivers, TI-RTOS, and Bluetooth® Software in ROM to

Make More Flash Available for the Application

 No external component required.

 Low Power and Wide Supply Voltage Range: 1.8 to 3.8V

- Internal DC-DC converter built-in

 2.4-GHz RF Transceiver and Integrated Antenna.

 Suitable for Systems Targeting Compliance With Worldwide Radio Frequency Regulations

- ETSI EN 300 328 (Europe)

- EN 300 440 Class 2 (Europe)

- FCC CFR47 Part 15 (US)

- ARIB STD-T66 (Japan)

 Tools and Development Environment from TI

- Full-Feature and Low-Cost Development Kits

- Packet Sniffer PC Software

- Sensor Controller Studio

- SmartRF™ Studio

- SmartRF Flash Programmer 2

- IAR Embedded Workbench® for ARM

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- Code Composer Studio™

1.2. Applications

 Home and Building Automation

- Connected Appliances

- Lighting

- Locks

- Gateways

- Security Systems

 Industrial

- Logistics

- Production and Manufacturing Automation

- Asset Tracking and Management

- HMI and Remote Display

- Access Control

 Retail

- Beacons

- Advertising

- ESL and Price Tags

- Point of Sales and Payment Systems

 Health and Medical

- Thermometers

- Blood Glucose and Pressure Meters

- Weight Scales

- Hearing Aids

 Sports and Fitness

- Activity Monitors and Fitness Trackers

- Heart Rate Monitors

- Running and Biking Sensors

- Sports Watches

- Gym Equipment

- Team Sports Equipment

 HID

- Voice Remote Controls

- Gaming

- Keyboards and Mice

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2. FUNCTIONAL FEATURES

2.1. Module Block Diagram

VDD

GPIOs

ZB7412-00 module

GPIOs

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2.2. Block Functional Feature

Microcontroller

 Powerful ARM® Cortex®-M3

 EEMBC CoreMark® score: 142

 Up to 48-MHz Clock Speed

 275KB of Nonvolatile Memory Including 128KB of In-System Programmable Flash

 Up to 28KB of System SRAM, of Which 20KB is Ultra-Low Leakage SRAM

 8-KB SRAM for Cache or System RAM Use

 2-Pin cJTAG and JTAG Debugging

 Supports Over-The-Air Upgrade (OTA)

Ultra-Low Power Sensor Controller

 Can run autonomous from the rest of the system

 16-Bit Architecture

 2-KB Ultra-Low Leakage SRAM for Code and Data

Peripherals

 All Digital Peripheral Pins can be routed to any GPIO.

 15 GPIOs

 4 General-Purpose Timer Modules (Eight 16-Bit or Four 32-Bit Timer, PWM Each)

 12-Bit ADC, 200-ksamples/s, 8-Channel Analog MUX

 Continuous Time Comparator

 Ultra-Low Power Analog Comparator

 Programmable Current Source

 UART

 2x SSI (SPI, MICROWIRE, TI)

 I2C

 I2S

 Real-Time Clock (RTC)

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 AES-128 Security Module

 True Random Number Generator (TRNG)

 Support for 8 Capacitive Sensing Buttons

 Integrated Temperature Sensor

RF Section

 2.4 GHz RF Transceiver Compatible With Bluetooth Low Energy (BLE) 4.2 and 5

specifications

 Excellent Receiver Sensitivity (–96 dBm for BLE), Selectivity, and Blocking Performance

 Link budget of 101 dB for BLE.

 Programmable Output Power up to +5 dBm

 Integrated Antenna

 Pre-certified for Compliance With Worldwide Radio Frequency Regulations

- ETSI (Europe)

- IC (Canada)

- FCC (USA)

- ARIB STD-T66 (Japan)

- NCC (Taiwan)

- RCM (Australia and New Zealand)

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3. MODULE OUTLINE

3.1. Signal Layout (Top View)

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3.2. Pin Description

Table 3-1. Pin Description

No.

Pin Name

Type

Description

1

GND

2

NC

No connection. For internal test only.

3

GND

4

DIO_0

Digital I/O

GPIO, Sensor Controller

5

DIO_1

Digital I/O

GPIO, Sensor Controller

6

DIO_2

Digital I/O

GPIO, Sensor Controller, High drive capability

7

DIO_3

Digital I/O

GPIO, Sensor Controller, High drive capability

8

DIO_4

Digital I/O

GPIO, Sensor Controller, High drive capability

9

JTAG_TMSC

Digital I/O

JTAG_TMSC, High drive capability

10

JTAG_TCKC

Digital I/O

JTAG_TCKC

11

DIO_5

Digital I/O

GPIO, High drive capability, JTAG_TDO

12

DIO_6

Digital I/O

GPIO, High drive capability, JTAG_TDI

13

RESET_N

Digital Input

Reset, active-low. No internal pullup. Built-in 0.1uF

capacitor to GND.

14

DIO_7

Digital/Analog I/O

GPIO, Sensor Controller, Analog

15

DIO_8

Digital/Analog I/O

GPIO, Sensor Controller, Analog

16

DIO_9

Digital/Analog I/O

GPIO, Sensor Controller, Analog. In -04 module,

DIO_9 pin is connected to CS# pin of internal serial

SPI Flash.

17

DIO_10

Digital/Analog I/O

GPIO, Sensor Controller, Analog. In -04 module,

DIO_10 pin is connected to SCLK pin of internal serial

SPI Flash.

18

DIO_11

Digital/Analog I/O

GPIO, Sensor Controller, Analog. In -04 module,

DIO_11 pin is connected to SI pin of internal serial SPI

Flash.

19

DIO_12

Digital/Analog I/O

GPIO, Sensor Controller, Analog. In -04 module,

DIO_12 pin is connected to SO pin of internal Serial

SPI Flash.

20

DIO_13

Digital/Analog I/O

GPIO, Sensor Controller, Analog

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21

DIO_14

Digital/Analog I/O

GPIO, Sensor Controller, Analog

22

VDDS

Power

1.8 V to 3.8 V main chip and DC/DC supply

23

VDDS2

Power

1.8 V to 3.8 V GPIO supply

24

NC

No connection.

25

GND

Ground

G1~G4

GND

Ground

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4. MODULE SPECIFICATIONS

4.1. Absolute Maximum Ratings(1)(2)

over operating free-air temperature range (unless otherwise noted)

(1) All voltage values are with respect to ground, unless otherwise noted.

(2) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These

are stress ratings only, and functional operation of the device at these or any other conditions beyond those

indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated

conditions for extended periods may affect device reliability.

(3) VDDS2 must be at the same potential as VDDS.

(4) Including analog capable DIO.

4.2. ESD Ratings

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

Parameter

Conditions

MIN

MAX

Unit

Supply voltage, VDDS(3)

-0.3

4.1

V

Voltage on any digital pin(4)

-0.3

VDDS+0.3

Max 4.1

V

Voltage on ADC input (Vin)

Voltage scaling enabled

-0.3

VDDS

V

Internal reference, voltage scaling disabled

-0.3

1.49

V

VDDS as reference, voltage scaling disabled

-0.3

VDDS/2.9

V

Input RF level

+5

dBm

Storage temperature range

-40

+85

°C

Parameter

Value

Unit

Electrostatic

discharge

performance (VESD)

Human Body Model (HBM), per ANSI/ESDA/JEDEC

JS001(1)

All pins

±2500

V

Charged Device Model (CDM), per JESD22-C101(2)

RF pins

±750

V

Non-RF pins

±750

V

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4.3. Recommended Operating Conditions

Parameter

Conditions

MIN

MAX

Unit

Ambient temperature range

-40

85

°C

Operating supply voltage (VDDS)

For operation in battery-powered and

3.3 V systems

1.8

3.8

V

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4.4. Power Consumption Summary

Tc = 25°C, VDDS = 3.0 V with internal DC-DC converter, unless otherwise noted.

Parameter

Test Conditions

Min

Typ

Max

Units

Icore

Core current

consumption

Reset. RESET_N pin asserted or VDDS below

Power-on-Reset threshold

100

nA

Shutdown. No clocks running, no retention

150

nA

Standby. With RTC, CPU, RAM and (partial)

register retention. RCOSC_LF

1.1

μA

Standby. With RTC, CPU, RAM and (partial)

register retention. XOSC_LF

1.3

μA

Standby. With Cache, RTC, CPU, RAM and

(partial) register retention. RCOSC_LF

2.8

μA

Standby. With Cache, RTC, CPU, RAM and

(partial) register retention. XOSC_LF

3.0

μA

Idle. Supply Systems and RAM powered.

550

μA

Active. Core running CoreMark

1.45mA +

31uA/MHz

Radio RX

6.2

mA

Radio TX, 0 dBm output power

6.8

Radio TX, 5 dBm output power

9.4

mA

Iperi

Peripheral Current Consumption (Adds to core current Icore for each peripheral unit activated)(1)

Peripheral

power domain

Delta current with domain enabled

20

μA

Serial power

domain

Delta current with domain enabled

13

μA

RF Core

Delta current with power domain enabled,

clock enabled, RF Core Idle

237

μA

μDMA

Delta current with clock enabled, module idle

130

μA

Timers

Delta current with clock enabled, module idle

113

μA

I2C

Delta current with clock enabled, module idle

12

μA

I2S

Delta current with clock enabled, module idle

36

μA

SSI

Delta current with clock enabled, module idle

93

μA

UART

Delta current with clock enabled, module idle

164

μA

(1) Iperi is not supported in standby or shutdown modes.

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4.5. General Characteristics

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.

Parameter

Test Conditions

Min

Typ

Max

Units

FLASH MEMORY

Supported flash erase cycles

before failure

100

K

Cycles

Flash page/sector erase current

Average delta current

12.6

mA

Flash page/sector erase time(1)

8

ms

Flash page/sector size

4

KB

Flash write current

Average delta current, 4 bytes at a time

8.15

mA

Flash write time(1)

4 bytes at a time

8

μs

Flash page/sector erase time(1)

8

ms

(1) This number is dependent on Flash aging and will increase over time and erase cycles

4.6. 125-kbps Coded (Bluetooth 5) – RX

RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS

= 3.0 V, fRF = 2440 MHz, unless otherwise noted.

Parameter

Test Conditions

Min

Typ

Max

Units

Receiver sensitivity

BER = 10–3

-102

dBm

Receiver saturation

BER = 10–3

>5

dBm

Frequency error

tolerance

Difference between the incoming carrier frequency

and the internally generated carrier frequency

-260

310

kHz

Data rate error

tolerance

Difference between incoming data rate and the

internally generated data rate (37-byte packets)

-260

260

ppm

Data rate error

tolerance

Difference between incoming data rate and the

internally generated data rate (255-byte packets)

-140

150

ppm

Co-channel rejection(1)

Wanted signal at –79 dBm, modulated interferer in

channel, BER = 10–3

-3

dB

Selectivity, ±1 MHz(1)

Wanted signal at –79 dBm, modulated interferer at

±1 MHz, BER = 10–3

9 / 5(2)

dB

Selectivity, ±2 MHz(1)

Wanted signal at –79 dBm, modulated interferer at

±2 MHz, BER = 10–3

43/32(2)

dB

Selectivity, ±3 MHz(1)

Wanted signal at –79 dBm, modulated interferer at

±3 MHz, BER = 10–3

47/42(2)

dB

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Selectivity, ±4 MHz(1)

Wanted signal at –79 dBm, modulated interferer at

±4 MHz, BER = 10–3

46/47(2)

dB

Selectivity, ±6 MHz(1)

Wanted signal at –79 dBm, modulated interferer at

±6 MHz, BER = 10–3

49/46(2)

dB

Alternate channel

rejection, ±7 MHz(1)

Wanted signal at –79 dBm, modulated interferer at

≥ ±7 MHz, BER = 10–3

50/47(2)

dB

Selectivity, Image

frequency(1)

Wanted signal at -79 dBm, modulated interferer at

image frequency, BER = 10–3

32

dB

Selectivity, Image

frequency ±1 MHz (1)

Note that Image frequency +1 MHz is the

Co-channel -1 MHz. Wanted signal at –79 dBm,

modulated interferer at ±1 MHz from image

frequency, BER = 10–3

5/32(2)

dB

Blocker rejection, ±8

MHz and above(1)

Wanted signal at -79 dBm, modulated interferer at

±8 MHz and above, BER = 10–3

>46

Out-of-band blocking(3)

30 MHz to 2000 MHz

-40

dBm

Out-of-band blocking

2003 MHz to 2399 MHz

-19

dBm

Out-of-band blocking

2484 MHz to 2997 MHz

-22

dBm

Intermodulation

Wanted signal at 2402 MHz, -76 dBm. Two

interferers at 2405 and 2408 MHz respectively, at

the given power level

-42

dBm

(1) Numbers given as I/C dB

(2) X / Y, where X is +N MHz and Y is –N MHz

(3) Excluding one exception at Fwanted / 2, per Bluetooth Specification

4.7. 125-kbps Coded (Bluetooth 5) – TX

RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS

= 3.0 V, fRF = 2440 MHz, unless otherwise noted.

Parameter

Test Conditions

Min

Typ

Max

Units

Output power, highest setting

Delivered to a single-ended 50-Ω load

3.2

4.8

5.6

dBm

Output power, lowest setting

Delivered to a single-ended 50-Ω load

-21

dBm

Spurious emission conducted

measurement(1)

f < 1 GHz, outside restricted bands

-43

dBm

f < 1 GHz, restricted bands ETSI

-65

dBm

f < 1 GHz, restricted bands FCC

-76

dBm

f > 1 GHz, including harmonics

-46

dBm

(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN

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300 440 Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).

4.8. 500-kbps Coded (Bluetooth 5) – RX

RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS

= 3.0 V, fRF = 2440 MHz, unless otherwise noted.

Parameter

Test Conditions

Min

Typ

Max

Units

Receiver sensitivity

BER = 10–3

-101

dBm

Receiver saturation

BER = 10–3

>5

dBm

Frequency error

tolerance

Difference between the incoming carrier frequency

and the internally generated carrier frequency

-240

240

kHz

Data rate error

tolerance

Difference between incoming data rate and the

internally generated data rate (37-byte packets)

-500

500

ppm

Data rate error

tolerance

Difference between incoming data rate and the

internally generated data rate (255-byte packets)

-310

330

ppm

Co-channel rejection(1)

Wanted signal at -72 dBm, modulated interferer in

channel, BER = 10–3

-5

dB

Selectivity, ±1 MHz(1)

Wanted signal at -72 dBm, modulated interferer at

±1 MHz, BER = 10–3

9 / 5(2)

dB

Selectivity, ±2 MHz(1)

Wanted signal at -72 dBm, modulated interferer at

±2 MHz, BER = 10–3

41/31(2)

dB

Selectivity, ±3 MHz(1)

Wanted signal at -72 dBm, modulated interferer at

±3 MHz, BER = 10–3

44/41(2)

dB

Selectivity, ±4 MHz(1)

Wanted signal at -72 dBm, modulated interferer at

±4 MHz, BER = 10–3

44/44(2)

dB

Selectivity, ±6 MHz(1)

Wanted signal at -72 dBm, modulated interferer at

±6 MHz, BER = 10–3

44/44(2)

dB

Alternate channel

rejection, ±7 MHz(1)

Wanted signal at -72 dBm, modulated interferer at

≥ ±7 MHz, BER = 10–3

44/44(2)

dB

Selectivity, Image

frequency(1)

Wanted signal at -72 dBm, modulated interferer at

image frequency, BER = 10–3

31

dB

Selectivity, Image

frequency ±1 MHz (1)

Note that Image frequency +1 MHz is the

Co-channel -1 MHz. Wanted signal at -72 dBm,

modulated interferer at ±1 MHz from image

frequency, BER = 10–3

5/41(2)

dB

Blocker rejection, ±8

Wanted signal at -72 dBm, modulated interferer at

44

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MHz and above(1)

±8 MHz and above, BER = 10–3

Out-of-band blocking(3)

30 MHz to 2000 MHz

--35

dBm

Out-of-band blocking

2003 MHz to 2399 MHz

-19

dBm

Out-of-band blocking

2484 MHz to 2997 MHz

-19

dBm

Intermodulation

Wanted signal at 2402 MHz, -69 dBm. Two

interferers at 2405 and 2408 MHz respectively, at

the given power level

-37

dBm

(1) Numbers given as I/C dB

(2) X / Y, where X is +N MHz and Y is –N MHz

(3) Excluding one exception at Fwanted / 2, per Bluetooth Specification

4.9. 500-kbps Coded (Bluetooth 5) – TX

RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS

= 3.0 V, fRF = 2440 MHz, unless otherwise noted.

Parameter

Test Conditions

Min

Typ

Max

Units

Output power, highest setting

Delivered to a single-ended 50-Ω load

3.2

4.8

5.6

dBm

Output power, lowest setting

Delivered to a single-ended 50-Ω load

-21

dBm

Spurious emission conducted

measurement(1)

f < 1 GHz, outside restricted bands

-43

dBm

f < 1 GHz, restricted bands ETSI

-65

dBm

f < 1 GHz, restricted bands FCC

-76

dBm

f > 1 GHz, including harmonics

-46

dBm

(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300

440 Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).

4.10. 1-Mbps GFSK (Bluetooth Low Energy) – RX

RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS

= 3.0 V, fRF = 2440 MHz, unless otherwise noted.

Parameter

Test Conditions

Min

Typ

Max

Units

Receiver sensitivity

BER = 10–3

-96

dBm

Receiver saturation

BER = 10–3

4

dBm

Frequency error

tolerance

Difference between the incoming carrier frequency

and the internally generated carrier frequency

-350

350

kHz

Data rate error

tolerance

Difference between incoming data rate and the

internally generated data rate

-750

750

ppm

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Co-channel rejection(1)

Wanted signal at –67 dBm, modulated interferer in

channel, BER = 10–3

-6

dB

Selectivity, ±1 MHz(1)

Wanted signal at –67 dBm, modulated interferer at

±1 MHz, BER = 10–3

7 / 3(2)

dB

Selectivity, ±2 MHz(1)

Wanted signal at –67 dBm, modulated interferer at

±2 MHz, BER = 10–3

34/25(2)

dB

Selectivity, ±3 MHz(1)

Wanted signal at –67 dBm, modulated interferer at

±3 MHz, BER = 10–3

38/26(2)

dB

Selectivity, ±4 MHz(1)

Wanted signal at –67 dBm, modulated interferer at

±4 MHz, BER = 10–3

42/29(2)

dB

Selectivity, ±5 MHz or

more(1)

Wanted signal at –67 dBm, modulated interferer at

≥ ±5 MHz, BER = 10–3

32

dB

Selectivity, Image

frequency(1)

Wanted signal at –67 dBm, modulated interferer at

image frequency, BER = 10–3

25

dB

Selectivity, Image

frequency ±1 MHz (1)

Wanted signal at –67 dBm, modulated interferer at

±1 MHz from image frequency, BER = 10–3

3/26(2)

dB

Out-of-band blocking(3)

30 MHz to 2000 MHz

-20

dBm

Out-of-band blocking

2003 MHz to 2399 MHz

-5

dBm

Out-of-band blocking

2484 MHz to 2997 MHz

-8

dBm

Out-of-band blocking

3000 MHz to 12.75 GHz

-8

dBm

Intermodulation

Wanted signal at 2402 MHz, –64 dBm. Two

interferers at 2405 and 2408 MHz respectively, at

the given power level

-34

dBm

Spurious emissions,

30 to 1000 MHz

Conducted measurement in a 50-Ω single-ended

load. Suitable for systems targeting compliance

with EN 300 328, EN 300 440 class 2, FCC CFR47,

Part 15 and ARIB STD-T-66

-71

dBm

Spurious emissions,

1 to 12.75 GHz

Conducted measurement in a 50-Ω single-ended

load. Suitable for systems targeting compliance

with EN 300 328, EN 300 440 class 2, FCC CFR47,

Part 15 and ARIB STD-T-66

-62

dBm

RSSI dynamic range

70

dB

RSSI accuracy

±4

dB

(1) Numbers given as I/C dB

(2) X / Y, where X is +N MHz and Y is –N MHz

(3) Excluding one exception at Fwanted / 2, per Bluetooth Specification

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4.11. 1-Mbps GFSK (Bluetooth Low Energy) – TX

RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS

= 3.0 V, fRF = 2440 MHz, unless otherwise noted.

Parameter

Test Conditions

Min

Typ

Max

Units

Output power, highest setting

Delivered to a single-ended 50-Ω load

3.2

4.8

5.6

dBm

Output power, lowest setting

Delivered to a single-ended 50-Ω load

-21

dBm

Spurious emission conducted

measurement(1)

f < 1 GHz, outside restricted bands

-43

dBm

f < 1 GHz, restricted bands ETSI

-65

dBm

f < 1 GHz, restricted bands FCC

-76

dBm

f > 1 GHz, including harmonics

-46

dBm

(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300

440 Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).

4.12. 2-Mbps GFSK (Bluetooth 5) – RX

RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS

= 3.0 V, fRF = 2440 MHz, unless otherwise noted.

Parameter

Test Conditions

Min

Typ

Max

Units

Receiver sensitivity

BER = 10–3

-92

dBm

Receiver saturation

BER = 10–3

4

dBm

Frequency error

tolerance

Difference between the incoming carrier frequency

and the internally generated carrier frequency

-300

500

kHz

Data rate error

tolerance

Difference between incoming data rate and the

internally generated data rate

-1000

1000

ppm

Co-channel rejection(1)

Wanted signal at –67 dBm, modulated interferer in

channel, BER = 10–3

-7

dB

Selectivity, ±2 MHz(1)

Wanted signal at –67 dBm, modulated interferer at

±2 MHz, BER = 10–3

8/4(2)

dB

Selectivity, ±4 MHz(1)

Wanted signal at –67 dBm, modulated interferer at

±4 MHz, BER = 10–3

31/26(2)

dB

Selectivity, ±6 MHz(1)

Wanted signal at –67 dBm, modulated interferer at

±6 MHz, BER = 10–3

37/38(2)

dB

Alternate channel

rejection, ±7 MHz (1)

Wanted signal at –67 dBm, modulated interferer at

≥ ±7 MHz, BER = 10–3

37/36(2)

dB

Selectivity, Image

Wanted signal at –67 dBm, modulated interferer at

4

dB

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frequency(1)

image frequency, BER = 10–3

Selectivity, Image

frequency ±2 MHz (1)

Note that Image frequency +2 MHz is the

Co-channel. Wanted signal at -67 dBm, modulated

interferer at ±2 MHz from image frequency, BER =

10–3

3/26(2)

dB

Out-of-band blocking(3)

30 MHz to 2000 MHz

-33

dBm

Out-of-band blocking

2003 MHz to 2399 MHz

15

dBm

Out-of-band blocking

2484 MHz to 2997 MHz

-12

dBm

Out-of-band blocking

3000 MHz to 12.75 GHz

-10

dBm

Intermodulation

Wanted signal at 2402 MHz, –64 dBm. Two

interferers at 2405 and 2408 MHz respectively, at

the given power level

-34

dBm

(1) Numbers given as I/C dB

(2) X / Y, where X is +N MHz and Y is –N MHz

(3) Excluding one exception at Fwanted / 2, per Bluetooth Specification

4.13. 2-Mbps GFSK (Bluetooth 5) – TX

RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS

= 3.0 V, fRF = 2440 MHz, unless otherwise noted.

Parameter

Test Conditions

Min

Typ

Max

Units

Output power, highest setting

Delivered to a single-ended 50-Ω load

3.2

4.8

5.6

dBm

Output power, lowest setting

Delivered to a single-ended 50-Ω load

-21

dBm

Error vector magnitude

At maximum output power

2

%

Spurious emission conducted

measurement (1)

f < 1 GHz, outside restricted bands

-43

dBm

f < 1 GHz, restricted bands ETSI

-65

dBm

f < 1 GHz, restricted bands FCC

-76

dBm

f > 1 GHz, including harmonics

-46

dBm

(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN

300 440 Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).

4.14. Internal 24-MHz Crystal Oscillator (XOSC_HF)(1)

over operating free-air temperature range (unless otherwise noted)

Parameter

Test Conditions

Min

Typ

Max

Units

Crystal frequency

24

MHz

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Crystal frequency tolerance(2)

-40

+40

ppm

Start-up time(3)

150

μs

(1) Probing or otherwise stopping the XTAL while the DC-DC converter is enabled may cause permanent damage to the

device.

(2) Includes initial tolerance of the crystal, drift over temperature, aging and frequency pulling due to incorrect load

capacitance. As per Bluetooth specification

(3) Kick-started based on a temperature and aging compensated RCOSC_HF using precharge injection

4.15. 32.768-kHz Crystal Oscillator (XOSC_LF)

over operating free-air temperature range (unless otherwise noted)

Parameter

Test Conditions

Min

Typ

Max

Units

Crystal frequency

32.768

KHz

Initial crystal frequency tolerance, Bluetooth

low energy applications

Tc = 25°C

-20

20

ppm

Crystal aging

-3

3

ppm/year

4.16. 48-MHz RC Oscillator (RCOSC_HF)

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.

Parameter

Test Conditions

Min

Typ

Max

Units

Frequency

48

MHz

Uncalibrated frequency accuracy

±1

%

Calibrated frequency accuracy(1)

±0.25

%

Start-up time

5

μs

(1) Accuracy relatively to the calibration source (XOSC_HF).

4.17. 32-kHz RC Oscillator (RCOSC_LF)

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.

Parameter

Test Conditions

Min

Typ

Max

Units

Calibrated frequency

32.8

KHz

Temperature coefficient

50

ppm/°C

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4.18. ADC Characteristics(1)

Tc = 25°C, VDDS = 3.0 V and voltage scaling enabled, unless otherwise noted.

Parameter

Test Conditions

Min

Typ

Max

Units

Input voltage range

0

VDDS

V

Resolution

12

Bits

Sample rate

200

ksps

Offset

Internal 4.3-V equivalent reference(2)

2

LSB

Gain error

Internal 4.3-V equivalent reference(2)

2.4

LSB

DNL(3) -

Differential nonlinearity

>-1

LSB

INL -

Integral nonlinearity

±3

LSB

ENOB -

Effective number of bits

Internal 4.3-V equivalent reference(2), 200 ksps,

9.6-kHz input tone

9.8

Bits

VDDS as reference, 200 ksps, 9.6-kHz input tone

10

Bits

Internal 1.44-V reference, voltage scaling disabled,

32 samples average, 200 ksps, 300-Hz input tone

11.1

Bits

THD -

Total harmonic

distortion

Internal 4.3-V equivalent reference(2), 200 ksps,

9.6-kHz input tone

-65

dB

VDDS as reference, 200 ksps, 9.6-kHz input tone

-69

dB

Internal 1.44-V reference, voltage scaling disabled,

32 samples average, 200 ksps, 300-Hz input tone

-71

dB

SINAD / SNDR -

Signal-to-noise and

distortion ratio

Internal 4.3-V equivalent reference(2), 200 ksps,

9.6-kHz input tone

60

dB

VDDS as reference, 200 ksps, 9.6-kHz input tone

63

dB

Internal 1.44-V reference, voltage scaling disabled,

32 samples average, 200 ksps, 300-Hz input tone

69

dB

SFDR –

Spurious-free dynamic

range

Internal 4.3-V equivalent reference(2), 200 ksps,

9.6-kHz input tone

67

dB

VDDS as reference, 200 ksps, 9.6-kHz input tone

72

dB

Internal 1.44-V reference, voltage scaling disabled,

32 samples average, 200 ksps, 300-Hz input tone

73

dB

Conversion time

Serial conversion, time-to-output, 24-MHz clock

50

Clock

cycles

Current consumption

Internal 4.3-V equivalent reference(2)

0.66

mA

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Current consumption

VDDS as reference

0.75

mA

Reference voltage

Equivalent fixed internal reference (input voltage

scaling enabled). For best accuracy, the ADC

conversion should be initiated through the

TI-RTOS™ API to include the gain or offset

compensation factors stored in FCFG1.

4.3

(2)(4)

V

Reference voltage

Fixed internal reference (input voltage scaling

disabled). For best accuracy, the ADC conversion

should be initiated through the TI-RTOS API to

include the gain or offset compensation factors

stored in FCFG1. This value is derived from the

scaled value (4.3 V) as follows: Vref = 4.3 V × 1408

/ 4095

1.48

V

Reference voltage

VDDS as reference (Also known as RELATIVE) (input

voltage scaling enabled)

VDDS

V

Reference voltage

VDDS as reference (Also known as RELATIVE) (input

voltage scaling disabled)

VDDS/

2.82(4)

V

Input Impedance

200 ksps, voltage scaling enabled. Capacitive input,

Input impedance depends on sampling frequency

and sampling time

>1

MΩ

(1) Using IEEE Std 1241™-2010 for terminology and test methods.

(2) Input signal scaled down internally before conversion, as if voltage range was 0 to 4.3 V.

(3) No missing codes. Positive DNL typically varies from +0.3 to +3.5, depending on device

(4) Applied voltage must be within absolute maximum ratings (Section 4.1) at all times.

4.19. Temperature Sensor

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.

Parameter

Test Conditions

Min

Typ

Max

Units

Resolution

4

°C

Range

-40

+85

°C

Accuracy

±5

°C

Supply voltage coefficient(1)

3.2

°C /V

(1) Automatically compensated when using supplied driver libraries.

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4.20. Battery Monitor

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.

Parameter

Test Conditions

Min

Typ

Max

Units

Resolution

50

mV

Range

1.8

3.8

V

Accuracy

13

mV

4.21. Continuous Time Comparator

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.

Parameter

Test Conditions

Min

Typ

Max

Units

Input voltage range

0

VDDS

V

External reference voltage

0

VDDS

V

Internal reference voltage

DCOUPL as reference

1.27

V

Offset

3

mV

Hysteresis

<2

mV

Decision time

Step from –10 mV to +10 mV

0.72

μs

Current consumption when enabled(1)

8.6

μA

(1) Additionally the bias module needs to be enabled when running in standby mode.

4.22. Low-Power Clocked Comparator

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.

Parameter

Test Conditions

Min

Typ

Max

Units

Input voltage range

0

VDDS

V

Clock frequency

32

kHz

Internal reference voltage, VDDS / 2

1.49-1.51

V

Internal reference voltage, VDDS / 3

1.01-1.03

V

Internal reference voltage, VDDS / 4

0.78-0.79

V

Internal reference voltage, DCOUPL / 1

1.25-1.28

V

Internal reference voltage, DCOUPL / 2

0.63-0.65

V

Internal reference voltage, DCOUPL / 3

0.42-0.44

V

Internal reference voltage, DCOUPL / 4

0.33-0.34

V

Offset

<2

mV

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Hysteresis

<5

mV

Decision time

Step from –50 mV to +50 mV

<1

clock cycle

Current consumption when enabled

362

nA

4.23. Programmable Current Source

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.

Parameter

Test Conditions

Min

Typ

Max

Units

Current source programmable output range

0.25-20

μA

Resolution

0.25

μA

Current consumption(1)

Including current source at

maximum programmable output

23

μA

(1) Additionally, the bias module must be enabled when running in standby mode.

4.24. DC Characteristics

Parameter

Test Conditions

Min

Typ

Max

Units

TA = 25°C, VDDS = 1.8 V

GPIO VOH at 8-mA load

IOCURR = 2, high drive GPIOs only

1.32

1.54

V

GPIO VOL at 8-mA load

IOCURR = 2, high drive GPIOs only

0.26

0.32

V

GPIO VOH at 4-mA load

IOCURR = 1

1.32

1.58

V

GPIO VOL at 4-mA load

IOCURR = 1

0.21

0.32

V

GPIO pullup current

Input mode, pullup enabled, Vpad=0V

71.7

μA

GPIO pulldown current

Input mode, pulldown enabled, Vpad=VDDS

21.1

μA

GPIO high/low input

transition, no hysteresis

IH = 0, transition between reading 0 and reading 1

0.88

V

GPIO low-to-high input

transition, with hysteresis

IH = 1, transition voltage for input read as 0→1

1.07

V

GPIO high-to-low input

transition, with hysteresis

IH = 1, transition voltage for input read as 1→0

0.74

V

GPIO input hysteresis

IH = 1, difference between 0→1 and 1→0 points

0.33

V

TA = 25°C, VDDS = 3.0 V

GPIO VOH at 8-mA load

IOCURR = 2, high drive GPIOs only

2.68

V

GPIO VOL at 8-mA load

IOCURR = 2, high drive GPIOs only

0.33

V

GPIO VOH at 4-mA load

IOCURR = 1

2.72

V

GPIO VOL at 4-mA load

IOCURR = 1

0.28

V

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TA = 25°C, VDDS = 3.8 V

GPIO pullup current

Input mode, pullup enabled, Vpad = 0 V

277

μA

GPIO pulldown current

Input mode, pulldown enabled, Vpad = VDDS

113

μA

GPIO high/low input

transition, no hysteresis

IH = 0, transition between reading 0 and reading 1

1.67

V

GPIO low-to-high input

transition, with hysteresis

IH = 1, transition voltage for input read as 0→1

1.94

V

GPIO high-to-low input

transition, with hysteresis

IH = 1, transition voltage for input read as 1→0

1.54

V

GPIO input hysteresis

IH = 1, difference between 0→1 and 1→0 points

0.4

V

TA = 25°C

VIH

Lowest GPIO input voltage reliably interpreted as a

”High”

0.8

VDDS

VIL

Highest GPIO input voltage reliably interpreted as

a ”Low”

0.2

VDDS

4.25. Timing Requirements

Min

Typ

Max

Units

Rising supply-voltage slew rate

0

100

mV/μs

Falling supply-voltage slew rate

0

20

mV/μs

Falling supply-voltage slew rate, with low-power flash settings(1)

3

mV/μs

Positive temperature

gradient in standby(2)

No limitation for negative temperature

gradient, or outside standby mode

5

°C/s

CONTROL INPUT AC CHARACTERISTICS(3)

RESET_N low duration

1

μs

SYNCHRONOUS SERIAL INTERFACE (SSI) (4)

S1 (SLAVE) (5)

Tclk_per

SSIClk period

12

65024

system clock

S2 (5)

tclk_high

SSIClk high time

0.5

Tclk_per

S3(5)

tclk_low

SSIClk low time

0.5

Tclk_per

(1) For smaller coin cell batteries, with high worst-case end-of-life equivalent source resistance, a 22-μF VDD input

capacitor must be used to ensure compliance with this slew rate.

(2) Applications using RCOSC_LF as sleep timer must also consider the drift in frequency caused by a change in

temperature.

(3) TA = –40°C to 85°C, VDDS = 1.8 V to 3.8 V, unless otherwise noted.

(4) Tc = 25°C, VDDS = 3.0 V, unless otherwise noted. Device operating as SLAVE. For SSI MASTER operation, see Section

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4.22.

(5) Refer to SSI timing diagrams Figure 4-1, Figure 4-2, and Figure 4-3.

4.26. Switching Characteristics

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.

Parameter

Test Conditions

Min

Typ

Max

Units

WAKEUP AND TIMING

Idle → Active

14

μs

Standby → Active

151

μs

Shutdown → Active

1015

μs

SYNCHRONOUS SERIAL INTERFACE (SSI) (1)

S1 (TX only)(2) tclk_per (SSIClk period)

One-way communication to SLAVE

4

65024

system

clocks

S1(TX and RX)(2) tclk_per (SSIClk period)

Normal duplex operation

8

65024

S2 (2) tclk_high (SSIClk high time)

0.5

tclk_per

S3 (2) tclk_low(SSIClk low time)

0.5

tclk_per

(1) Device operating as MASTER. For SSI SLAVE operation, see Section 4.21.

(2) Refer to SSI timing diagrams Figure 4-1, Figure 4-2, and Figure 4-3.

Figure 4-1. SSI Timing for TI Frame Format (FRF = 01), Single Transfer Timing Measurement

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Figure 4-2. SSI Timing for MICROWIRE Frame Format (FRF = 10), Single Transfer

Figure 4-3. SSI Timing for SPI Frame Format (FRF = 00), With SPH = 1

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4.27. Typical Characteristics

There are some typical performance plots measured on the CC2640R2FRHB device in the

CC2640R2F data sheet, and the plots relevant for the ZB7412-00 module. Please visit TI web site

http://www.ti.com/lit/gpn/cc2640r2f , and see Section 5.29

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4.28. Chip Antenna Characteristics

Measured on the Jorjin ZB7412E00 EM board with TA = 25°C

Parameter

2400MHz

2442MHz

2484MHz

Efficiency%

57.6 %

59.1 %

58.9 %

Peak Gain

2.0 dBi

2.2 dBi

2.3 dBi

Figure 4-4. Efficiency vs. Frequency

Z

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Figure 4-5. DUT 3D Pattern

X

Y

Z

Y

Z

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5. DESIGN RECOMMENDATIONS

5.1. Module Layout Recommendations

Follow these module layout recommendations:

 Antenna

For a module with on board chip antenna, to eliminate the influence from other

components or ground, recommended that the module is placed in the corner of main PCB,

and define a clearance area around the antenna, where no grounding or signal trace are

contained. The clearance area applies to all layers of the main PCB. The recommended

dimensions of the main PCB keep out area are shown in bellow.

11 mm

5.5 mm

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 RF test point

There are RF test points in the bottom side of this module. It is only for module production

used. Do not connect any signal to these test points (leave no connection) in the module.

And do not design test point in the main board. Please reserve a clearance in the top-side

copper plane underneath the RF test pads. Do not route any signal or place via in this keep

out area.

 Device and Documentation Support

For a complete device and tool documents for the CC2640R2F platform, visit the Texas

Instruments website at http://www.ti.com.

RF test points keep

out area

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5.2. Reference Schematic

J1

HEADER 5x2/SM

2

4

6

8

10

1

3

5

7

9nRESET

JTAG_TCK

JTAG_TMS

VDDS

DIO_2

DIO_1

DIO_0

JTAG_TCK

JTAG_TMS

DIO_4

DIO_3

DIO_6/

DIO_5

DIO_7nRESET

DIO_9

DIO_8

DIO_13

DIO_12

DIO_11

DIO_10

DIO_14

cJTAG Interface

VDDS

R6

100K

RES0402

VDDS

G1 G2

G3 G4

U1

ZB7

DIO_0

4

DIO_1

5

JTAG_TMSC

9

JTAG_TCKC

10

DIO_5

11

DIO_6

12

RESET_N

13

DIO_7

14

DIO_8

15

DIO_9

16

DIO_10 17

DIO_11 18

DIO_12 19

DIO_13 20

DIO_14 21

VDDS 22

GND1

G1 GND2 G2

GND3

G3 GND4 G4

DIO_4

8DIO_3

7DIO_2

6

GND

3

GND5

1

NC

2

VDDS2 23

NC 24

GND6 25

 No external decoupling is required.

 The reset line should have an external pullup resistor unless the line is actively driven.

Placement of this component is not critical.

 All Digital Peripheral Pins can be routed to any GPIO.

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6. PACKAGE INFORMATION

6.1. Module Mechanical Outline

Top View

Note:

1> Pad tolerance as ±30um

2> Unit: mm

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Top and Side View

Note:

A: Typical: 2.45mm, Maximum: 2.69mm

B: Typical: 2.00mm, Maximum: 2.20mm

Unit: mm

6.2. Ordering Information

Order Number

Package

ZB7412-00

LGA-25

Shielding case

Opening

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6.3. Package Marking

Marking

Description

JORJIN

Brand name

ZB7412-00

Model name

YYWWSSFX

Lot Trace Code: YYWWSSFX

YY= Digit of the year, ex: 2016=16

WW= Week (01~52)

SS= Serial number from 01~98 match to MFG’s lot number, or 99

to repair control code

F= Reverse for internal use

X = A for Module version

WS2-ZB7412

FCC ID

10462A-ZB7412

Canada IC ID

R 201-170780

JORJIN

IC:10462A-ZB7412

FCC ID:WS2-ZB7412

XXXXXXXXXXXXXX

Model:ZB7412-00

LTC:YYWWSSFX

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TELEC compliance mark, and ID

CE compliance mark

NCC compliance mark, and ID

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7. SMT AND BAKING RECOMMENDATION

7.1. Baking Recommendation

 Baking condition：

- Follow MSL Level 4 to do baking process.

- After bag is opened, devices that will be subjected to reflow solder or other high temperature

process must be

a) Mounted within 72 hours of factory conditions <30°C/60% RH, or

b) Stored at <10% RH.

- Devices require bake, before mounting, if Humidity Indicator Card reads >10%

- If baking is required, Devices may be baked for 8 hrs. at 125 °C.

7.2. SMT Recommendation

 Recommended Reflow profile：

H

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No.

Item

Temperature (°C)

Time (sec)

1

Pre-heat

D1: 140 ~ D2: 200

T1: 80 ~ 120

2

Soldering

D2: = 220

T2: 60 +/- 10

3

Peak-Temp.

D3: 250 °C max

Note: (1) Reflow soldering is recommended two times maximum.

(2) Add Nitrogen while Reflow process： SMT solder ability will be better.

 Stencil thickness： 0.1~ 0.13 mm (Recommended)

 Soldering paste (without Pb)： Recommended SENJU N705-GRN3360-K2-V can get better

soldering effects.

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8. TAPE REEL INFROMATION

8.1. Cover / Carrier Tape Dimension

Packing Qty

Dry Bag

Inner Box

Outer Box

1200 EA / Reel

1 Reel

(1200 EA)

1 Dry Bag

(1200 EA)

4 Inner Box

(4800 EA)

Inner Box Size : 352mm x 352mm x 56mm

Outer Box Size : 354mm x 362mm x 250mm

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9. REGULATORY INFORMATION

This section outlines the regulatory information for the following countries:

 United States

 Canada

 Europe

 Japan

 Taiwan

 Australia/New Zealand

9.1. United States

Federal Communications Commission Statement

15.21. You are cautioned that changes or modifications not expressly approved by the part

responsible for compliance could void the user’s authority to operate the equipment.

This device complies with Part 15 of the FCC Rules. Operation is subject to the following two

conditions:

(1) This device may not cause harmful interference and

(2) This device must accept any interference received, including interference that may cause

undesired operation of the device.

FCC RF Radiation Exposure Statement:

This equipment complies with FCC radiation exposure limits set forth for an uncontrolled

environment. End users must follow the specific operating instructions for satisfying RF exposure

limits. This transmitter must not be co-located or operating in conjunction with any other antenna

or transmitter.

End Product Labeling:

This module is designed to comply with the FCC statement, FCC ID: WS2-ZB7412. The host system

using this module must display a visible label indicating the following text:

"Contains FCC ID: WS2-ZB7412"

Manual Information to the End User

The OEM integrator has to be aware not to provide information to the end user regarding how to

install or remove this RF module in the user’s manual of the end product which integrates this

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module.

The end user manual shall include all required regulatory information/warning as shown in this

manual.

9.2. Canada

This device complies with Industry Canada’s licence-exempt RSS standard(s).

Operation is subject to the following two conditions:

(1) this device may not cause interference, and

(2) this device must accept any interference, including interference that may cause undesired

operation of the device.

Le présent appareil est conforme aux CNR d'Industrie Canada applicables aux appareils radio

exempts de licence

L'exploitation est autorisée aux deux conditions suivantes:

(1) l'appareil ne doit pas produire de brouillage, et

(2) l'utilisateur de l'appareil doit accepter tout brouillage radioélectrique subi, même si le

brouillage est susceptible d'en compromettre le fonctionnement.

RF Radiation Exposure Statement:

This equipment complies with IC radiation exposure limits set forth for an uncontrolled environment.

This equipment should be installed and operated with minimum distance 10mm between the

radiator & your body. This transmitter must not be co-located or operating in conjunction with any

other antenna or transmitter.

Déclaration d'exposition aux radiations:

Cet équipement est conforme aux limites d'exposition aux rayonnements IC établies pour un

environnement non contrôlé. Cet équipement doit être installé et utilisé avec un minimum de

10mm de distance entre la source de rayonnement et votre corps.

End Product Labeling:

This module is designed to comply with the IC statement, IC: 10462A-ZB7. The host system using

this module must display a visible label indicating the following text:

"Contains IC: 10462A-ZB7412"

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Manual Information to the End User

The OEM integrator has to be aware not to provide information to the end user regarding how to

install or remove this RF module in the user’s manual of the end product which integrates this

module.

The end user manual shall include all required regulatory information/warning as shown in this

manual.

9.3. Europe

Hereby, Jorjin Technologies Inc. declares that the radio equipment type RF module is in compliance

with Directive 2014/53/EU

The full text of the EU declaration of conformity is available at the following internet address:

http://www.jorjin.com/upload/14XXXXXXXX.pdf

The compliance has been verified in the operating frequency band of 2400 MHz to 2483.5 MHz.

Developers and integrators that incorporate the ZB7412-00 RF Module in any end products are

responsible for obtaining applicable regulatory approvals for such end product.

The ZB7412-00 has been tested in the 2400-GHz to 2483.5-GHz ISM frequency band at 3.3 V with a

maximum peak power of 7.1 dBm EIRP across the temperature range –40°C to +85°C and tolerance.

Labeling and User Information Requirements

As a result of the conformity assessment procedure described in Annex III of the Directive

2014/53/EC, the end-customer equipment should be labeled as follows:

9.4. Japan

The ZB7412-00 is certified as a module with type certification number XXX-XXXXXX. End products

that integrate this module do not need additional MIC Japan certification for the end product.

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End product can display the certification label of the embedded module.

9.5. Taiwan

The ZB7412-00 is certified as a module with type certification number CCAXXXXXXXXXXX. End

products that integrate this module do not need additional NCC Taiwan certification for the end

product.

End product can display the certification label of the embedded module.

The user's manual should contain following warning (for RF device) in traditional Chinese:

注意

本產品符合低功率電波輻射性電機管理辦法：

第十二條

經形式認證合格之低功率射頻電機，非經許可，公司、商號或使用者均不得擅自變更頻率、加

大功率或變更原設計之特性及功能。

第十四條

低功率射頻電機之使用不得影響飛航安全及干擾合法通信；經發現有干擾現象時，應立即停

用，並改善至無干擾時方的繼續使用。

前項合法通信，指依電信規定作業之無線電信。低功率射頻電機須忍受合法通信或工業、科學

及醫療用電波輻射性電機設備之干擾。

系統廠商應於平台上標示「本產品內含射頻模組: CCAXXXXXXXXXXX」字樣

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9.6. Australia/New Zealand

This module is conformity with the following standards

 AS/NZS 4268: 2012 Amdt 1-2013

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10. HISTORY CHANGE

Revision

Date

Description

R 0.1

2017/03/16

1. Official Released.

R 0.2

2017/03/22

1. Specification for Bluetooth 5 is to be added in near

future

R 0.3

2017/07/31

1. Add Bluetooth 5

2. Modify model number in this document.

3. Update marking information

4. Update regulatory information

Jorjin Technologies ZB7412 BLE wireless module User Manual 1

Jorjin Technologies Inc. BLE wireless module 1

User Manual

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