Jorjin Technologies ZB7412 BLE wireless module User Manual 1

Jorjin Technologies Inc. BLE wireless module 1

User Manual

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Date Submitted2017-08-01 00:00:00
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Document Author: donny

a module solution provider
ZB7412-00
SimpleLinkTM Bluetooth® Low Energy
Wireless MCU Module
TI CC2640R2F Solution
Datasheet
Revision 0.3
Prepared By
Reviewed By
Approved By
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DOC No: ZB7412-00A-DTS-R03
Index
1. OVERVIEW ....................................................................................................................................... 3
1.1. GENERAL FEATURES ........................................................................................................................ 3
1.2. APPLICATIONS ................................................................................................................................ 4
2. FUNCTIONAL FEATURES .................................................................................................................. 5
2.1. MODULE BLOCK DIAGRAM ............................................................................................................... 5
2.2. BLOCK FUNCTIONAL FEATURE ........................................................................................................... 6
Microcontroller ............................................................................................................................ 6
Ultra-Low Power Sensor Controller ............................................................................................ 6
Peripherals ................................................................................................................................... 6
RF Section .................................................................................................................................... 7
3. MODULE OUTLINE ........................................................................................................................... 8
3.1. SIGNAL LAYOUT (TOP VIEW) ............................................................................................................. 8
3.2. PIN DESCRIPTION ........................................................................................................................... 9
4. MODULE SPECIFICATIONS ............................................................................................................. 11
4.1. ABSOLUTE MAXIMUM RATINGS(1)(2)................................................................................................. 11
4.2. ESD RATINGS .............................................................................................................................. 11
4.3. RECOMMENDED OPERATING CONDITIONS ......................................................................................... 12
4.4. POWER CONSUMPTION SUMMARY .................................................................................................. 13
4.5. GENERAL CHARACTERISTICS ............................................................................................................ 14
4.6. 125-KBPS CODED (BLUETOOTH 5) – RX.......................................................................................... 14
4.7. 125-KBPS CODED (BLUETOOTH 5) – TX .......................................................................................... 15
4.8. 500-KBPS CODED (BLUETOOTH 5) – RX.......................................................................................... 16
4.9. 500-KBPS CODED (BLUETOOTH 5) – TX .......................................................................................... 17
4.10. 1-MBPS GFSK (BLUETOOTH LOW ENERGY) – RX ............................................................................. 17
4.11. 1-MBPS GFSK (BLUETOOTH LOW ENERGY) – TX ............................................................................. 19
4.12. 2-MBPS GFSK (BLUETOOTH 5) – RX ............................................................................................. 19
4.13. 2-MBPS GFSK (BLUETOOTH 5) – TX ............................................................................................. 20
4.14. INTERNAL 24-MHZ CRYSTAL OSCILLATOR (XOSC_HF)(1) .................................................................. 20
4.15. 32.768-KHZ CRYSTAL OSCILLATOR (XOSC_LF) ............................................................................... 21
4.16. 48-MHZ RC OSCILLATOR (RCOSC_HF) ........................................................................................ 21
4.17. 32-KHZ RC OSCILLATOR (RCOSC_LF) .......................................................................................... 21
4.18. ADC CHARACTERISTICS(1) ............................................................................................................ 22
4.19. TEMPERATURE SENSOR ................................................................................................................ 23
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4.20. BATTERY MONITOR ..................................................................................................................... 24
4.21. CONTINUOUS TIME COMPARATOR ................................................................................................. 24
4.22. LOW-POWER CLOCKED COMPARATOR............................................................................................. 24
4.23. PROGRAMMABLE CURRENT SOURCE .............................................................................................. 25
4.24. DC CHARACTERISTICS .................................................................................................................. 25
4.25. TIMING REQUIREMENTS............................................................................................................... 26
4.26. SWITCHING CHARACTERISTICS ....................................................................................................... 27
4.27. TYPICAL CHARACTERISTICS............................................................................................................ 29
4.28. CHIP ANTENNA CHARACTERISTICS .................................................................................................. 30
5. DESIGN RECOMMENDATIONS ....................................................................................................... 32
5.1. MODULE L AYOUT RECOMMENDATIONS ............................................................................................ 32
5.2. REFERENCE SCHEMATIC ................................................................................................................. 34
6. PACKAGE INFORMATION ............................................................................................................... 35
6.1. MODULE MECHANICAL OUTLINE ..................................................................................................... 35
6.2. ORDERING INFORMATION............................................................................................................... 36
6.3. PACKAGE MARKING ...................................................................................................................... 37
7. SMT AND BAKING RECOMMENDATION ....................................................................................... 39
7.1. BAKING RECOMMENDATION ........................................................................................................... 39
7.2. SMT RECOMMENDATION .............................................................................................................. 39
8. TAPE REEL INFROMATION ............................................................................................................. 41
8.1. COVER / CARRIER TAPE DIMENSION ................................................................................................. 41
9. REGULATORY INFORMATION ........................................................................................................ 42
9.1. UNITED STATES ............................................................................................................................ 42
9.2. CANADA ..................................................................................................................................... 43
9.3. EUROPE ...................................................................................................................................... 44
9.4. JAPAN ........................................................................................................................................ 44
9.5. TAIWAN ...................................................................................................................................... 45
9.6. AUSTRALIA/NEW ZEALAND ............................................................................................................ 46
10. HISTORY CHANGE ........................................................................................................................ 47
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DOC No: ZB7412-00A-DTS-R03
1. OVERVIEW
The certified ZB7412-00 module from JORJIN is a wireless MCU module targeting Bluetooth 4.2 and
Bluetooth 5 low energy applications. This module is based on TI CC2640R2F wireless MCU QFN-32
package chip.
The module is a cost-effective, ultralow power, 2.4-GHz RF devices. Very low active RF and MCU
current and low-power mode current consumption provide excellent battery lifetime and allow for
operation on small coin cell batteries and in energy-harvesting applications.
1.1. General Features












TI CC2640R2F, 24MHz & 32.768KHz crystals, DC2DC, and chip antenna on a single module.
Built-in TI CC2640R2F 5x5mm RHB VQFN32 (15 GPIOs)
LGA 25pins package.
Dimension 16.9mm(L) x 11mm(W) x 2.45mm(H)
Powerful ARM® Cortex®-M3 Microcontroller
Ultra-Low Power Sensor Controller
Efficient Code Size Architecture, Placing Drivers, TI-RTOS, and Bluetooth® Software in ROM to
Make More Flash Available for the Application
No external component required.
Low Power and Wide Supply Voltage Range: 1.8 to 3.8V
- Internal DC-DC converter built-in
2.4-GHz RF Transceiver and Integrated Antenna.
Suitable for Systems Targeting Compliance With Worldwide Radio Frequency Regulations
- ETSI EN 300 328 (Europe)
- EN 300 440 Class 2 (Europe)
- FCC CFR47 Part 15 (US)
- ARIB STD-T66 (Japan)
Tools and Development Environment from TI
Full-Feature and Low-Cost Development Kits
Packet Sniffer PC Software
Sensor Controller Studio
SmartRF™ Studio
SmartRF Flash Programmer 2
IAR Embedded Workbench® for ARM
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Code Composer Studio™
1.2. Applications

Home and Building Automation
- Connected Appliances
- Lighting
- Locks
- Gateways
- Security Systems

Industrial
- Logistics
- Production and Manufacturing Automation
- Asset Tracking and Management
- HMI and Remote Display
- Access Control
Retail
- Beacons
- Advertising
- ESL and Price Tags




- Point of Sales and Payment Systems
Health and Medical
- Thermometers
- Blood Glucose and Pressure Meters
- Weight Scales
- Hearing Aids
Sports and Fitness
- Activity Monitors and Fitness Trackers
- Heart Rate Monitors
- Running and Biking Sensors
Sports Watches
Gym Equipment
Team Sports Equipment
Voice Remote Controls
Gaming
Keyboards and Mice
HID
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DOC No: ZB7412-00A-DTS-R03
2. FUNCTIONAL FEATURES
2.1. Module Block Diagram
VDD
GPIOs
ZB7412-00 module
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2.2. Block Functional Feature
Microcontroller





Powerful ARM® Cortex®-M3
EEMBC CoreMark® score: 142
Up to 48-MHz Clock Speed
275KB of Nonvolatile Memory Including 128KB of In-System Programmable Flash
Up to 28KB of System SRAM, of Which 20KB is Ultra-Low Leakage SRAM



8-KB SRAM for Cache or System RAM Use
2-Pin cJTAG and JTAG Debugging
Supports Over-The-Air Upgrade (OTA)
Ultra-Low Power Sensor Controller

Can run autonomous from the rest of the system

16-Bit Architecture

2-KB Ultra-Low Leakage SRAM for Code and Data
Peripherals

All Digital Peripheral Pins can be routed to any GPIO.

15 GPIOs

4 General-Purpose Timer Modules (Eight 16-Bit or Four 32-Bit Timer, PWM Each)

12-Bit ADC, 200-ksamples/s, 8-Channel Analog MUX

Continuous Time Comparator

Ultra-Low Power Analog Comparator

Programmable Current Source

UART

2x SSI (SPI, MICROWIRE, TI)

I2C

I2S

Real-Time Clock (RTC)
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
AES-128 Security Module

True Random Number Generator (TRNG)

Support for 8 Capacitive Sensing Buttons

Integrated Temperature Sensor
RF Section

2.4 GHz RF Transceiver Compatible With Bluetooth Low Energy (BLE) 4.2 and 5
specifications

Excellent Receiver Sensitivity (–96 dBm for BLE), Selectivity, and Blocking Performance

Link budget of 101 dB for BLE.

Programmable Output Power up to +5 dBm

Integrated Antenna

Pre-certified for Compliance With Worldwide Radio Frequency Regulations
ETSI (Europe)
IC (Canada)
FCC (USA)
ARIB STD-T66 (Japan)
NCC (Taiwan)
RCM (Australia and New Zealand)
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DOC No: ZB7412-00A-DTS-R03
3. MODULE OUTLINE
3.1. Signal Layout (Top View)
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3.2. Pin Description
Table 3-1. Pin Description
Pin
No.
Pin Name
Type
GND
Description
GND
NC
GND
DIO_0
Digital I/O
GPIO, Sensor Controller
DIO_1
Digital I/O
GPIO, Sensor Controller
DIO_2
Digital I/O
GPIO, Sensor Controller, High drive capability
DIO_3
Digital I/O
GPIO, Sensor Controller, High drive capability
DIO_4
Digital I/O
GPIO, Sensor Controller, High drive capability
JTAG_TMSC
Digital I/O
JTAG_TMSC, High drive capability
10
JTAG_TCKC
Digital I/O
JTAG_TCKC
11
DIO_5
Digital I/O
GPIO, High drive capability, JTAG_TDO
12
DIO_6
Digital I/O
GPIO, High drive capability, JTAG_TDI
13
RESET_N
14
DIO_7
Digital/Analog I/O
GPIO, Sensor Controller, Analog
15
DIO_8
Digital/Analog I/O
GPIO, Sensor Controller, Analog
NC
GND
Digital Input
GND
No connection. For internal test only.
GND
Reset, active-low. No internal pullup. Built-in 0.1uF
capacitor to GND.
GPIO, Sensor Controller, Analog. In -04 module,
16
DIO_9
Digital/Analog I/O
DIO_9 pin is connected to CS# pin of internal serial
SPI Flash.
GPIO, Sensor Controller, Analog. In -04 module,
17
DIO_10
Digital/Analog I/O
DIO_10 pin is connected to SCLK pin of internal serial
SPI Flash.
GPIO, Sensor Controller, Analog. In -04 module,
18
DIO_11
Digital/Analog I/O
DIO_11 pin is connected to SI pin of internal serial SPI
Flash.
GPIO, Sensor Controller, Analog. In -04 module,
19
DIO_12
Digital/Analog I/O
DIO_12 pin is connected to SO pin of internal Serial
SPI Flash.
20
DIO_13
Digital/Analog I/O
GPIO, Sensor Controller, Analog
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DOC No: ZB7412-00A-DTS-R03
21
DIO_14
Digital/Analog I/O
22
VDDS
Power
1.8 V to 3.8 V main chip and DC/DC supply
23
VDDS2
Power
1.8 V to 3.8 V GPIO supply
24
NC
25
GND
GND
Ground
G1~G4
GND
GND
Ground
NC
GPIO, Sensor Controller, Analog
No connection.
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DOC No: ZB7412-00A-DTS-R03
4. MODULE SPECIFICATIONS
4.1. Absolute Maximum Ratings(1)(2)
over operating free-air temperature range (unless otherwise noted)
Parameter
Supply voltage, VDDS
Conditions
(3)
Voltage on any digital pin
(4)
MIN
MAX
Unit
-0.3
4.1
-0.3
VDDS+0.3
Max 4.1
Voltage on ADC input (Vin)
Voltage scaling enabled
-0.3
VDDS
Internal reference, voltage scaling disabled
-0.3
1.49
VDDS as reference, voltage scaling disabled
-0.3
VDDS/2.9
+5
dBm
+85
°C
Input RF level
Storage temperature range
-40
(1) All voltage values are with respect to ground, unless otherwise noted.
(2) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These
are stress ratings only, and functional operation of the device at these or any other conditions beyond those
indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated
conditions for extended periods may affect device reliability.
(3) VDDS2 must be at the same potential as VDDS.
(4) Including analog capable DIO.
4.2. ESD Ratings
Parameter
Electrostatic
Human Body Model (HBM), per ANSI/ESDA/JEDEC
discharge
JS001
performance (VESD)
Charged Device Model (CDM), per JESD22-C101
Value
Unit
All pins
±2500
RF pins
±750
Non-RF pins
±750
(1)
(2)
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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DOC No: ZB7412-00A-DTS-R03
4.3. Recommended Operating Conditions
Parameter
Conditions
Ambient temperature range
Operating supply voltage (VDDS)
For operation in battery-powered and
MIN
MAX
Unit
-40
85
°C
1.8
3.8
3.3 V systems
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DOC No: ZB7412-00A-DTS-R03
4.4. Power Consumption Summary
Tc = 25°C, VDDS = 3.0 V with internal DC-DC converter, unless otherwise noted.
Test Conditions
Parameter
Reset. RESET_N pin asserted or VDDS below
Min
Typ
Max
Units
100
nA
Shutdown. No clocks running, no retention
150
nA
Standby. With RTC, CPU, RAM and (partial)
1.1
μA
1.3
μA
2.8
μA
3.0
μA
550
μA
Power-on-Reset threshold
register retention. RCOSC_LF
Standby. With RTC, CPU, RAM and (partial)
register retention. XOSC_LF
Icore
Core current
Standby. With Cache, RTC, CPU, RAM and
consumption
(partial) register retention. RCOSC_LF
Standby. With Cache, RTC, CPU, RAM and
(partial) register retention. XOSC_LF
Idle. Supply Systems and RAM powered.
Active. Core running CoreMark
1.45mA +
31uA/MHz
Radio RX
6.2
Radio TX, 0 dBm output power
6.8
Radio TX, 5 dBm output power
9.4
Peripheral Current Consumption (Adds to core current Icore for each peripheral unit activated)
Peripheral
mA
mA
(1)
Delta current with domain enabled
20
μA
Delta current with domain enabled
13
μA
Delta current with power domain enabled,
237
μA
power domain
Serial power
domain
RF Core
Iperi
(1)
clock enabled, RF Core Idle
μDMA
Delta current with clock enabled, module idle
130
μA
Timers
Delta current with clock enabled, module idle
113
μA
I2C
Delta current with clock enabled, module idle
12
μA
I2S
Delta current with clock enabled, module idle
36
μA
SSI
Delta current with clock enabled, module idle
93
μA
UART
Delta current with clock enabled, module idle
164
μA
Iperi is not supported in standby or shutdown modes.
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DOC No: ZB7412-00A-DTS-R03
4.5. General Characteristics
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
Test Conditions
Parameter
Min
Typ
Max
Units
FLASH MEMORY
Supported flash erase cycles
100
before failure
Cycles
Flash page/sector erase current
Flash page/sector erase time
Average delta current
(1)
Flash page/sector size
Flash write current
Flash write time
Average delta current, 4 bytes at a time
(1)
4 bytes at a time
Flash page/sector erase time
(1)
12.6
mA
ms
KB
8.15
mA
μs
ms
(1) This number is dependent on Flash aging and will increase over time and erase cycles
4.6. 125-kbps Coded (Bluetooth 5) – RX
RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS
= 3.0 V, fRF = 2440 MHz, unless otherwise noted.
Test Conditions
Parameter
Min
Typ
Max
Units
BER = 10
–3
-102
dBm
Receiver saturation
BER = 10
–3
>5
dBm
Frequency error
Difference between the incoming carrier frequency
tolerance
and the internally generated carrier frequency
Data rate error
Difference between incoming data rate and the
tolerance
internally generated data rate (37-byte packets)
Data rate error
Difference between incoming data rate and the
Receiver sensitivity
tolerance
(1)
Wanted signal at –79 dBm, modulated interferer in
channel, BER = 10
(1)
(1)
-260
260
ppm
-140
150
ppm
(1)
dB
(2)
9/5
dB
43/32
(2)
dB
47/42
(2)
dB
–3
Wanted signal at –79 dBm, modulated interferer at
±3 MHz, BER = 10
-3
–3
Wanted signal at –79 dBm, modulated interferer at
±2 MHz, BER = 10
Selectivity, ±3 MHz
kHz
–3
Wanted signal at –79 dBm, modulated interferer at
±1 MHz, BER = 10
Selectivity, ±2 MHz
310
internally generated data rate (255-byte packets)
Co-channel rejection
Selectivity, ±1 MHz
-260
–3
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Selectivity, ±4 MHz
(1)
Wanted signal at –79 dBm, modulated interferer at
±4 MHz, BER = 10
Selectivity, ±6 MHz
(1)
Alternate channel
rejection, ±7 MHz
≥ ±7 MHz, BER = 10
Selectivity, Image
frequency
49/46
(2)
dB
50/47
(2)
dB
–3
Wanted signal at -79 dBm, modulated interferer at
(1)
dB
–3
Wanted signal at –79 dBm, modulated interferer at
(1)
(2)
–3
Wanted signal at –79 dBm, modulated interferer at
±6 MHz, BER = 10
46/47
32
dB
–3
image frequency, BER = 10
Selectivity, Image
frequency ±1 MHz
(2)
Note that Image frequency +1 MHz is the
(1)
5/32
dB
Co-channel -1 MHz. Wanted signal at –79 dBm,
modulated interferer at ±1 MHz from image
frequency, BER = 10
Blocker rejection, ±8
Wanted signal at -79 dBm, modulated interferer at
(1)
±8 MHz and above, BER = 10
MHz and above
Out-of-band blocking
–3
(3)
>46
–3
30 MHz to 2000 MHz
-40
dBm
Out-of-band blocking
2003 MHz to 2399 MHz
-19
dBm
Out-of-band blocking
2484 MHz to 2997 MHz
-22
dBm
Intermodulation
Wanted signal at 2402 MHz, -76 dBm. Two
-42
dBm
interferers at 2405 and 2408 MHz respectively, at
the given power level
(1) Numbers given as I/C dB
(2) X / Y, where X is +N MHz and Y is –N MHz
(3) Excluding one exception at Fwanted / 2, per Bluetooth Specification
4.7. 125-kbps Coded (Bluetooth 5) – TX
RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS
= 3.0 V, fRF = 2440 MHz, unless otherwise noted.
Parameter
Test Conditions
Min
Typ
Max
Units
3.2
4.8
5.6
dBm
Output power, highest setting
Delivered to a single-ended 50-Ω load
Output power, lowest setting
Delivered to a single-ended 50-Ω load
-21
dBm
Spurious emission conducted
f < 1 GHz, outside restricted bands
-43
dBm
f < 1 GHz, restricted bands ETSI
-65
dBm
f < 1 GHz, restricted bands FCC
-76
dBm
f > 1 GHz, including harmonics
-46
dBm
measurement
(1)
(1)
Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN
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DOC No: ZB7412-00A-DTS-R03
300 440 Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).
4.8. 500-kbps Coded (Bluetooth 5) – RX
RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS
= 3.0 V, fRF = 2440 MHz, unless otherwise noted.
Test Conditions
Parameter
Min
Typ
Max
Units
Receiver sensitivity
BER = 10
–3
-101
dBm
Receiver saturation
BER = 10
–3
>5
dBm
Frequency error
Difference between the incoming carrier frequency
tolerance
and the internally generated carrier frequency
Data rate error
Difference between incoming data rate and the
tolerance
internally generated data rate (37-byte packets)
Data rate error
Difference between incoming data rate and the
tolerance
internally generated data rate (255-byte packets)
Co-channel rejection
(1)
Wanted signal at -72 dBm, modulated interferer in
channel, BER = 10
Selectivity, ±1 MHz
(1)
Selectivity, ±2 MHz
Selectivity, ±3 MHz
Selectivity, ±4 MHz
(1)
Selectivity, ±6 MHz
(1)
Alternate channel
rejection, ±7 MHz
≥ ±7 MHz, BER = 10
Selectivity, Image
frequency
ppm
-5
dB
(2)
9/5
dB
41/31
(2)
dB
44/41
(2)
dB
44/44
(2)
dB
44/44
(2)
dB
44/44
(2)
dB
31
dB
–3
image frequency, BER = 10
Selectivity, Image
frequency ±1 MHz
330
–3
Wanted signal at -72 dBm, modulated interferer at
(1)
-310
–3
Wanted signal at -72 dBm, modulated interferer at
(1)
ppm
–3
Wanted signal at -72 dBm, modulated interferer at
±6 MHz, BER = 10
500
–3
Wanted signal at -72 dBm, modulated interferer at
±4 MHz, BER = 10
-500
–3
Wanted signal at -72 dBm, modulated interferer at
±3 MHz, BER = 10
kHz
–3
Wanted signal at -72 dBm, modulated interferer at
±2 MHz, BER = 10
(1)
240
–3
Wanted signal at -72 dBm, modulated interferer at
±1 MHz, BER = 10
(1)
-240
Note that Image frequency +1 MHz is the
(1)
(2)
5/41
dB
Co-channel -1 MHz. Wanted signal at -72 dBm,
modulated interferer at ±1 MHz from image
frequency, BER = 10
Blocker rejection, ±8
–3
Wanted signal at -72 dBm, modulated interferer at
44
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(1)
±8 MHz and above, BER = 10
MHz and above
Out-of-band blocking
(3)
–3
30 MHz to 2000 MHz
--35
dBm
Out-of-band blocking
2003 MHz to 2399 MHz
-19
dBm
Out-of-band blocking
2484 MHz to 2997 MHz
-19
dBm
Intermodulation
Wanted signal at 2402 MHz, -69 dBm. Two
-37
dBm
interferers at 2405 and 2408 MHz respectively, at
the given power level
(1) Numbers given as I/C dB
(2) X / Y, where X is +N MHz and Y is –N MHz
(3) Excluding one exception at Fwanted / 2, per Bluetooth Specification
4.9. 500-kbps Coded (Bluetooth 5) – TX
RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS
= 3.0 V, fRF = 2440 MHz, unless otherwise noted.
Test Conditions
Parameter
Min
Typ
Max
Units
3.2
4.8
5.6
dBm
Output power, highest setting
Delivered to a single-ended 50-Ω load
Output power, lowest setting
Delivered to a single-ended 50-Ω load
-21
dBm
Spurious emission conducted
f < 1 GHz, outside restricted bands
-43
dBm
f < 1 GHz, restricted bands ETSI
-65
dBm
f < 1 GHz, restricted bands FCC
-76
dBm
f > 1 GHz, including harmonics
-46
dBm
measurement
(1)
(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300
440 Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).
4.10. 1-Mbps GFSK (Bluetooth Low Energy) – RX
RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS
= 3.0 V, fRF = 2440 MHz, unless otherwise noted.
Test Conditions
Parameter
Min
Typ
Max
Units
BER = 10
–3
-96
dBm
Receiver saturation
BER = 10
–3
dBm
Frequency error
Difference between the incoming carrier frequency
tolerance
and the internally generated carrier frequency
Data rate error
Difference between incoming data rate and the
tolerance
internally generated data rate
Receiver sensitivity
-350
350
kHz
-750
750
ppm
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Co-channel rejection
(1)
Wanted signal at –67 dBm, modulated interferer in
channel, BER = 10
Selectivity, ±1 MHz
(1)
Wanted signal at –67 dBm, modulated interferer at
(1)
dB
7/3
(2)
dB
–3
±1 MHz, BER = 10
Selectivity, ±2 MHz
-6
–3
Wanted signal at –67 dBm, modulated interferer at
34/25
(2)
dB
38/26
(2)
dB
42/29
(2)
dB
–3
±2 MHz, BER = 10
Selectivity, ±3 MHz
(1)
Wanted signal at –67 dBm, modulated interferer at
±3 MHz, BER = 10
Selectivity, ±4 MHz
(1)
–3
Wanted signal at –67 dBm, modulated interferer at
±4 MHz, BER = 10
Selectivity, ±5 MHz or
–3
32
dB
25
dB
3/26(2)
dB
30 MHz to 2000 MHz
-20
dBm
Out-of-band blocking
2003 MHz to 2399 MHz
-5
dBm
Out-of-band blocking
2484 MHz to 2997 MHz
-8
dBm
Out-of-band blocking
3000 MHz to 12.75 GHz
-8
dBm
Intermodulation
Wanted signal at 2402 MHz, –64 dBm. Two
-34
dBm
-71
dBm
-62
dBm
RSSI dynamic range
70
dB
RSSI accuracy
±4
dB
(1)
more
≥ ±5 MHz, BER = 10
Selectivity, Image
frequency
Wanted signal at –67 dBm, modulated interferer at
Wanted signal at –67 dBm, modulated interferer at
(1)
–3
image frequency, BER = 10
Selectivity, Image
frequency ±1 MHz
–3
Wanted signal at –67 dBm, modulated interferer at
(1)
Out-of-band blocking
(3)
–3
±1 MHz from image frequency, BER = 10
interferers at 2405 and 2408 MHz respectively, at
the given power level
Spurious emissions,
Conducted measurement in a 50-Ω single-ended
30 to 1000 MHz
load. Suitable for systems targeting compliance
with EN 300 328, EN 300 440 class 2, FCC CFR47,
Part 15 and ARIB STD-T-66
Spurious emissions,
Conducted measurement in a 50-Ω single-ended
1 to 12.75 GHz
load. Suitable for systems targeting compliance
with EN 300 328, EN 300 440 class 2, FCC CFR47,
Part 15 and ARIB STD-T-66
(1) Numbers given as I/C dB
(2) X / Y, where X is +N MHz and Y is –N MHz
(3) Excluding one exception at Fwanted / 2, per Bluetooth Specification
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4.11. 1-Mbps GFSK (Bluetooth Low Energy) – TX
RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS
= 3.0 V, fRF = 2440 MHz, unless otherwise noted.
Test Conditions
Parameter
Min
Typ
Max
Units
3.2
4.8
5.6
dBm
Output power, highest setting
Delivered to a single-ended 50-Ω load
Output power, lowest setting
Delivered to a single-ended 50-Ω load
-21
dBm
Spurious emission conducted
f < 1 GHz, outside restricted bands
-43
dBm
f < 1 GHz, restricted bands ETSI
-65
dBm
f < 1 GHz, restricted bands FCC
-76
dBm
f > 1 GHz, including harmonics
-46
dBm
measurement
(1)
(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300
440 Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).
4.12. 2-Mbps GFSK (Bluetooth 5) – RX
RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS
= 3.0 V, fRF = 2440 MHz, unless otherwise noted.
Test Conditions
Parameter
Min
Typ
Max
Units
BER = 10
–3
-92
dBm
Receiver saturation
BER = 10
–3
dBm
Frequency error
Difference between the incoming carrier frequency
tolerance
and the internally generated carrier frequency
Data rate error
Difference between incoming data rate and the
Receiver sensitivity
tolerance
-300
500
kHz
-1000
1000
ppm
internally generated data rate
Co-channel rejection
(1)
Wanted signal at –67 dBm, modulated interferer in
-7
dB
–3
channel, BER = 10
Selectivity, ±2 MHz
(1)
Wanted signal at –67 dBm, modulated interferer at
±2 MHz, BER = 10
Selectivity, ±4 MHz
(1)
Selectivity, ±6 MHz
Alternate channel
rejection, ±7 MHz
Selectivity, Image
(2)
dB
37/38
(2)
dB
37/36
(2)
dB
–3
Wanted signal at –67 dBm, modulated interferer at
(1)
31/26
–3
Wanted signal at –67 dBm, modulated interferer at
±6 MHz, BER = 10
dB
–3
Wanted signal at –67 dBm, modulated interferer at
±4 MHz, BER = 10
(1)
(2)
8/4
≥ ±7 MHz, BER = 10
–3
Wanted signal at –67 dBm, modulated interferer at
dB
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frequency
(1)
–3
image frequency, BER = 10
Selectivity, Image
3/26(2)
dB
30 MHz to 2000 MHz
-33
dBm
Out-of-band blocking
2003 MHz to 2399 MHz
15
dBm
Out-of-band blocking
2484 MHz to 2997 MHz
-12
dBm
Out-of-band blocking
3000 MHz to 12.75 GHz
-10
dBm
Intermodulation
Wanted signal at 2402 MHz, –64 dBm. Two
-34
dBm
frequency ±2 MHz
Note that Image frequency +2 MHz is the
(1)
Co-channel. Wanted signal at -67 dBm, modulated
interferer at ±2 MHz from image frequency, BER =
–3
10
Out-of-band blocking
(3)
interferers at 2405 and 2408 MHz respectively, at
the given power level
(1) Numbers given as I/C dB
(2) X / Y, where X is +N MHz and Y is –N MHz
(3) Excluding one exception at Fwanted / 2, per Bluetooth Specification
4.13. 2-Mbps GFSK (Bluetooth 5) – TX
RF performance is specified in a single ended 50 ohm reference plane at the antenna feeding point with Tc = 25°C, VDDS
= 3.0 V, fRF = 2440 MHz, unless otherwise noted.
Parameter
Test Conditions
Output power, highest setting
Delivered to a single-ended 50-Ω load
Output power, lowest setting
Delivered to a single-ended 50-Ω load
Error vector magnitude
At maximum output power
Spurious emission conducted
measurement
(1)
(1)
Min
Typ
Max
Units
3.2
4.8
5.6
dBm
-21
dBm
f < 1 GHz, outside restricted bands
-43
dBm
f < 1 GHz, restricted bands ETSI
-65
dBm
f < 1 GHz, restricted bands FCC
-76
dBm
f > 1 GHz, including harmonics
-46
dBm
Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN
300 440 Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).
4.14. Internal 24-MHz Crystal Oscillator (XOSC_HF)(1)
over operating free-air temperature range (unless otherwise noted)
Parameter
Crystal frequency
Test Conditions
Min
Typ
24
Max
Units
MHz
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Crystal frequency tolerance
Start-up time
(2)
-40
+40
(3)
150
ppm
μs
(1) Probing or otherwise stopping the XTAL while the DC-DC converter is enabled may cause permanent damage to the
device.
(2) Includes initial tolerance of the crystal, drift over temperature, aging and frequency pulling due to incorrect load
capacitance. As per Bluetooth specification
(3) Kick-started based on a temperature and aging compensated RCOSC_HF using precharge injection
4.15. 32.768-kHz Crystal Oscillator (XOSC_LF)
over operating free-air temperature range (unless otherwise noted)
Test Conditions
Parameter
Min
Typ
Crystal frequency
Max
Units
32.768
Initial crystal frequency tolerance, Bluetooth
Tc = 25°C
KHz
-20
20
ppm
-3
ppm/year
low energy applications
Crystal aging
4.16. 48-MHz RC Oscillator (RCOSC_HF)
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
Test Conditions
Parameter
Min
Typ
Max
Units
Frequency
48
MHz
Uncalibrated frequency accuracy
±1
±0.25
μs
Calibrated frequency accuracy
(1)
Start-up time
(1) Accuracy relatively to the calibration source (XOSC_HF).
4.17. 32-kHz RC Oscillator (RCOSC_LF)
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
Parameter
Calibrated frequency
Temperature coefficient
Test Conditions
Min
Typ
Max
Units
32.8
KHz
50
ppm/°C
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4.18. ADC Characteristics(1)
Tc = 25°C, VDDS = 3.0 V and voltage scaling enabled, unless otherwise noted.
Parameter
Test Conditions
Min
Input voltage range
Typ
Resolution
Gain error
Units
VDDS
12
Sample rate
Offset
Max
Bits
200
ksps
Internal 4.3-V equivalent reference
(2)
LSB
Internal 4.3-V equivalent reference
(2)
2.4
LSB
>-1
LSB
±3
LSB
9.8
Bits
10
Bits
11.1
Bits
-65
dB
(3)
DNL Differential nonlinearity
INL Integral nonlinearity
(2)
ENOB -
Internal 4.3-V equivalent reference , 200 ksps,
Effective number of bits
9.6-kHz input tone
VDDS as reference, 200 ksps, 9.6-kHz input tone
Internal 1.44-V reference, voltage scaling disabled,
32 samples average, 200 ksps, 300-Hz input tone
(2)
THD -
Internal 4.3-V equivalent reference ,
200 ksps,
Total harmonic
9.6-kHz input tone
distortion
VDDS as reference, 200 ksps, 9.6-kHz input tone
-69
dB
Internal 1.44-V reference, voltage scaling disabled,
-71
dB
60
dB
32 samples average, 200 ksps, 300-Hz input tone
(2)
SINAD / SNDR -
Internal 4.3-V equivalent reference , 200 ksps,
Signal-to-noise and
9.6-kHz input tone
distortion ratio
VDDS as reference, 200 ksps, 9.6-kHz input tone
63
dB
Internal 1.44-V reference, voltage scaling disabled,
69
dB
67
dB
32 samples average, 200 ksps, 300-Hz input tone
(2)
SFDR –
Internal 4.3-V equivalent reference , 200 ksps,
Spurious-free dynamic
9.6-kHz input tone
range
VDDS as reference, 200 ksps, 9.6-kHz input tone
72
dB
Internal 1.44-V reference, voltage scaling disabled,
73
dB
50
Clock
32 samples average, 200 ksps, 300-Hz input tone
Conversion time
Serial conversion, time-to-output, 24-MHz clock
cycles
Current consumption
Internal 4.3-V equivalent reference
(2)
0.66
mA
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Current consumption
VDDS as reference
0.75
mA
Reference voltage
Equivalent fixed internal reference (input voltage
4.3
scaling enabled). For best accuracy, the ADC
(2)(4)
conversion should be initiated through the
TI-RTOS™ API to include the gain or offset
compensation factors stored in FCFG1.
Reference voltage
Fixed internal reference (input voltage scaling
1.48
VDDS
VDDS/
disabled). For best accuracy, the ADC conversion
should be initiated through the TI-RTOS API to
include the gain or offset compensation factors
stored in FCFG1. This value is derived from the
scaled value (4.3 V) as follows: Vref = 4.3 V × 1408
/ 4095
Reference voltage
VDDS as reference (Also known as RELATIVE) (input
voltage scaling enabled)
Reference voltage
VDDS as reference (Also known as RELATIVE) (input
(4)
voltage scaling disabled)
Input Impedance
2.82
200 ksps, voltage scaling enabled. Capacitive input,
>1
MΩ
Input impedance depends on sampling frequency
and sampling time
(1) Using IEEE Std 1241™-2010 for terminology and test methods.
(2) Input signal scaled down internally before conversion, as if voltage range was 0 to 4.3 V.
(3) No missing codes. Positive DNL typically varies from +0.3 to +3.5, depending on device
(4) Applied voltage must be within absolute maximum ratings (Section 4.1) at all times.
4.19. Temperature Sensor
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
Parameter
Test Conditions
Min
Resolution
Max
Range
-40
Accuracy
Supply voltage coefficient
Typ
(1)
Units
°C
+85
°C
±5
°C
3.2
°C/V
(1) Automatically compensated when using supplied driver libraries.
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4.20. Battery Monitor
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
Test Conditions
Parameter
Min
Typ
Resolution
Max
50
Range
Units
mV
1.8
3.8
Accuracy
mV
13
4.21. Continuous Time Comparator
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
Test Conditions
Parameter
Min
Typ
Max
Units
Input voltage range
VDDS
External reference voltage
VDDS
Internal reference voltage
DCOUPL as reference
1.27
Offset
mV
Hysteresis
<2
mV
0.72
μs
8.6
μA
Decision time
Step from –10 mV to +10 mV
Current consumption when enabled
(1)
(1) Additionally the bias module needs to be enabled when running in standby mode.
4.22. Low-Power Clocked Comparator
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
Parameter
Input voltage range
Clock frequency
Test Conditions
Min
Typ
Max
Units
VDDS
32
kHz
Internal reference voltage, VDDS / 2
1.49-1.51
Internal reference voltage, VDDS / 3
1.01-1.03
Internal reference voltage, VDDS / 4
0.78-0.79
Internal reference voltage, DCOUPL / 1
1.25-1.28
Internal reference voltage, DCOUPL / 2
0.63-0.65
Internal reference voltage, DCOUPL / 3
0.42-0.44
Internal reference voltage, DCOUPL / 4
0.33-0.34
<2
mV
Offset
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Hysteresis
<5
Decision time
Step from –50 mV to +50 mV
Current consumption when enabled
mV
<1
clock cycle
nA
362
4.23. Programmable Current Source
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
Test Conditions
Parameter
Min
Current source programmable output range
Resolution
Current consumption
(1)
Including current source at
Typ
Max
Units
0.25-20
μA
0.25
μA
23
μA
maximum programmable output
(1) Additionally, the bias module must be enabled when running in standby mode.
4.24. DC Characteristics
Test Conditions
Parameter
Min
Typ
1.32
1.54
Max
Units
TA = 25°C, VDDS = 1.8 V
GPIO VOH at 8-mA load
IOCURR = 2, high drive GPIOs only
GPIO VOL at 8-mA load
IOCURR = 2, high drive GPIOs only
GPIO VOH at 4-mA load
IOCURR = 1
GPIO VOL at 4-mA load
IOCURR = 1
0.21
GPIO pullup current
Input mode, pullup enabled, Vpad=0V
71.7
μA
GPIO pulldown current
Input mode, pulldown enabled, Vpad=VDDS
21.1
μA
GPIO high/low input
IH = 0, transition between reading 0 and reading 1
0.88
IH = 1, transition voltage for input read as 0→1
1.07
IH = 1, transition voltage for input read as 1→0
0.74
IH = 1, difference between 0→1 and 1→0 points
0.33
0.26
1.32
0.32
1.58
0.32
transition, no hysteresis
GPIO low-to-high input
transition, with hysteresis
GPIO high-to-low input
transition, with hysteresis
GPIO input hysteresis
TA = 25°C, VDDS = 3.0 V
GPIO VOH at 8-mA load
IOCURR = 2, high drive GPIOs only
2.68
GPIO VOL at 8-mA load
IOCURR = 2, high drive GPIOs only
0.33
GPIO VOH at 4-mA load
IOCURR = 1
2.72
GPIO VOL at 4-mA load
IOCURR = 1
0.28
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TA = 25°C, VDDS = 3.8 V
GPIO pullup current
Input mode, pullup enabled, Vpad = 0 V
277
μA
GPIO pulldown current
Input mode, pulldown enabled, Vpad = VDDS
113
μA
GPIO high/low input
IH = 0, transition between reading 0 and reading 1
1.67
IH = 1, transition voltage for input read as 0→1
1.94
IH = 1, transition voltage for input read as 1→0
1.54
IH = 1, difference between 0→1 and 1→0 points
0.4
transition, no hysteresis
GPIO low-to-high input
transition, with hysteresis
GPIO high-to-low input
transition, with hysteresis
GPIO input hysteresis
TA = 25°C
VIH
Lowest GPIO input voltage reliably interpreted as a
0.8
VDDS
”High”
VIL
Highest GPIO input voltage reliably interpreted as
0.2
VDDS
a ”Low”
4.25. Timing Requirements
Min
Rising supply-voltage slew rate
Falling supply-voltage slew rate
Falling supply-voltage slew rate, with low-power flash settings
Positive temperature
gradient in standby
(2)
S2
S3
(1)
(5)
100
mV/μs
20
mV/μs
mV/μs
°C/s
gradient, or outside standby mode
(3)
SYNCHRONOUS SERIAL INTERFACE (SSI)
(5)
Units
(1)
RESET_N low duration
(5)
Max
No limitation for negative temperature
CONTROL INPUT AC CHARACTERISTICS
S1 (SLAVE)
Typ
μs
(4)
Tclk_per
SSIClk period
12
65024
system clock
tclk_high
SSIClk high time
0.5
Tclk_per
tclk_low
SSIClk low time
0.5
Tclk_per
For smaller coin cell batteries, with high worst-case end-of-life equivalent source resistance, a 22-μF VDD input
capacitor must be used to ensure compliance with this slew rate.
(2)
Applications using RCOSC_LF as sleep timer must also consider the drift in frequency caused by a change in
temperature.
(3)
TA = –40°C to 85°C, VDDS = 1.8 V to 3.8 V, unless otherwise noted.
(4)
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted. Device operating as SLAVE. For SSI MASTER operation, see Section
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4.22.
(5)
Refer to SSI timing diagrams Figure 4-1, Figure 4-2, and Figure 4-3.
4.26. Switching Characteristics
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
Test Conditions
Parameter
Min
Typ
Max
Units
WAKEUP AND TIMING
Idle → Active
14
μs
Standby → Active
151
μs
Shutdown → Active
1015
μs
SYNCHRONOUS SERIAL INTERFACE (SSI)
S1 (TX only)
(2)
tclk_per (SSIClk period)
(2)
S1(TX and RX) tclk_per (SSIClk period)
(1)
One-way communication to SLAVE
65024
system
Normal duplex operation
65024
clocks
S2
(2)
tclk_high (SSIClk high time)
0.5
tclk_per
S3
(2)
tclk_low(SSIClk low time)
0.5
tclk_per
(1)
Device operating as MASTER. For SSI SLAVE operation, see Section 4.21.
(2)
Refer to SSI timing diagrams Figure 4-1, Figure 4-2, and Figure 4-3.
Figure 4-1. SSI Timing for TI Frame Format (FRF = 01), Single Transfer Timing Measurement
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Figure 4-2. SSI Timing for MICROWIRE Frame Format (FRF = 10), Single Transfer
Figure 4-3. SSI Timing for SPI Frame Format (FRF = 00), With SPH = 1
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4.27. Typical Characteristics
There are some typical performance plots measured on the CC2640R2FRHB device in the
CC2640R2F data sheet, and the plots relevant for the ZB7412-00 module. Please visit TI web site
http://www.ti.com/lit/gpn/cc2640r2f , and see Section 5.29
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4.28. Chip Antenna Characteristics
Measured on the Jorjin ZB7412E00 EM board with TA = 25°C
Parameter
2400MHz
2442MHz
2484MHz
Efficiency%
57.6 %
59.1 %
58.9 %
Peak Gain
2.0 dBi
2.2 dBi
2.3 dBi
Figure 4-4. Efficiency vs. Frequency
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Figure 4-5. DUT 3D Pattern
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5. DESIGN RECOMMENDATIONS
5.1. Module Layout Recommendations
Follow these module layout recommendations:
 Antenna
For a module with on board chip antenna, to eliminate the influence from other
components or ground, recommended that the module is placed in the corner of main PCB,
and define a clearance area around the antenna, where no grounding or signal trace are
contained. The clearance area applies to all layers of the main PCB. The recommended
dimensions of the main PCB keep out area are shown in bellow.
11 mm
5.5 mm
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 RF test point
There are RF test points in the bottom side of this module. It is only for module production
used. Do not connect any signal to these test points (leave no connection) in the module.
And do not design test point in the main board. Please reserve a clearance in the top-side
copper plane underneath the RF test pads. Do not route any signal or place via in this keep
out area.
RF test points keep
out area
 Device and Documentation Support
For a complete device and tool documents for the CC2640R2F platform, visit the Texas
Instruments website at http://www.ti.com.
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5.2. Reference Schematic
U1
ZB7
VDDS
G1
G3
GND1
GND3
G2
G4
GND6
NC
VDDS2
VDDS
DIO_14
DIO_13
DIO_12
DIO_11
DIO_10
GND2
GND4
25
24
23
22
21
20
19
18
17
G2
G4
R6
100K
RES0402
JTAG_TCK
DIO_5
DIO_6/
nRESET
DIO_14
DIO_13
DIO_12
DIO_11
DIO_10
cJTAG Interface
VDDS
J1
10
11
12
13
14
15
16
VDDS
GND5
NC
G1
GND
DIO_0
DIO_1
G3
DIO_2
DIO_3
DIO_4
JTAG_TMSC
JTAG_TCKC
DIO_5
DIO_6
RESET_N
DIO_7
DIO_8
DIO_9
DIO_0
DIO_1
DIO_2
DIO_3
DIO_4
JTAG_TMS
DIO_9
DIO_8
DIO_7
10
JTAG_TMS
JTAG_TCK
nRESET
HEADER 5x2/SM


No external decoupling is required.
The reset line should have an external pullup resistor unless the line is actively driven.

Placement of this component is not critical.
All Digital Peripheral Pins can be routed to any GPIO.
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6. PACKAGE INFORMATION
6.1. Module Mechanical Outline
Top View
Note:
1> Pad tolerance as ±30um
2> Unit: mm
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Top and Side View
Shielding case
Opening
Note:
A: Typical: 2.45mm, Maximum: 2.69mm
B: Typical: 2.00mm, Maximum: 2.20mm
Unit: mm
6.2. Ordering Information
Order Number
Package
ZB7412-00
LGA-25
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6.3. Package Marking
JORJIN
Model:ZB7412-00
LTC:YYWWSSFX
FCC ID:WS2-ZB7412
IC:10462A-ZB7412
201-170780
XXXXXXXXXXXXXX
Marking
Description
JORJIN
Brand name
ZB7412-00
Model name
YYWWSSFX
Lot Trace Code: YYWWSSFX
YY= Digit of the year, ex: 2016=16
WW= Week (01~52)
SS= Serial number from 01~98 match to MFG’s lot number, or 99
to repair control code
F= Reverse for internal use
X = A for Module version
WS2-ZB7412
FCC ID
10462A-ZB7412
Canada IC ID
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TELEC compliance mark, and ID
CE compliance mark
NCC compliance mark, and ID
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7. SMT AND BAKING RECOMMENDATION
7.1. Baking Recommendation

Baking condition：
- Follow MSL Level 4 to do baking process.
- After bag is opened, devices that will be subjected to reflow solder or other high temperature
process must be
a) Mounted within 72 hours of factory conditions <30°C/60% RH, or
b) Stored at <10% RH.
- Devices require bake, before mounting, if Humidity Indicator Card reads >10%
- If baking is required, Devices may be baked for 8 hrs. at 125 °C.
7.2. SMT Recommendation

Recommended Reflow profile：
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DOC No: ZB7412-00A-DTS-R03
No.
Item
Temperature (°C)
Time (sec)
Pre-heat
D1: 140 ~ D2: 200
T1: 80 ~ 120
Soldering
D2: = 220
T2: 60 +/- 10
Peak-Temp.
D3: 250 °C max
Note: (1) Reflow soldering is recommended two times maximum.
(2) Add Nitrogen while Reflow process： SMT solder ability will be better.

Stencil thickness： 0.1~ 0.13 mm (Recommended)

Soldering paste (without Pb)： Recommended SENJU N705-GRN3360-K2-V can get better
soldering effects.
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8. TAPE REEL INFROMATION
8.1. Cover / Carrier Tape Dimension
Packing Qty
Dry Bag
Inner Box
Outer Box
1200 EA / Reel
1 Reel
(1200 EA)
1 Dry Bag
(1200 EA)
4 Inner Box
(4800 EA)
Inner Box Size : 352mm x 352mm x 56mm
Outer Box Size : 354mm x 362mm x 250mm
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9. REGULATORY INFORMATION
This section outlines the regulatory information for the following countries:
 United States
 Canada
 Europe
 Japan
 Taiwan
 Australia/New Zealand
9.1. United States
Federal Communications Commission Statement
15.21. You are cautioned that changes or modifications not expressly approved by the part
responsible for compliance could void the user’s authority to operate the equipment.
This device complies with Part 15 of the FCC Rules. Operation is subject to the following two
conditions:
(1) This device may not cause harmful interference and
(2) This device must accept any interference received, including interference that may cause
undesired operation of the device.
FCC RF Radiation Exposure Statement:
This equipment complies with FCC radiation exposure limits set forth for an uncontrolled
environment. End users must follow the specific operating instructions for satisfying RF exposure
limits. This transmitter must not be co-located or operating in conjunction with any other antenna
or transmitter.
End Product Labeling:
This module is designed to comply with the FCC statement, FCC ID: WS2-ZB7412. The host system
using this module must display a visible label indicating the following text:
"Contains FCC ID: WS2-ZB7412"
Manual Information to the End User
The OEM integrator has to be aware not to provide information to the end user regarding how to
install or remove this RF module in the user’s manual of the end product which integrates this
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module.
The end user manual shall include all required regulatory information/warning as shown in this
manual.
9.2. Canada
This device complies with Industry Canada’s licence-exempt RSS standard(s).
Operation is subject to the following two conditions:
(1) this device may not cause interference, and
(2) this device must accept any interference, including interference that may cause undesired
operation of the device.
Le présent appareil est conforme aux CNR d'Industrie Canada applicables aux appareils radio
exempts de licence
L'exploitation est autorisée aux deux conditions suivantes:
(1) l'appareil ne doit pas produire de brouillage, et
(2) l'utilisateur de l'appareil doit accepter tout brouillage radioélectrique subi, même si le
brouillage est susceptible d'en compromettre le fonctionnement.
RF Radiation Exposure Statement:
This equipment complies with IC radiation exposure limits set forth for an uncontrolled environment.
This equipment should be installed and operated with minimum distance 10mm between the
radiator & your body. This transmitter must not be co-located or operating in conjunction with any
other antenna or transmitter.
Déclaration d'exposition aux radiations:
Cet équipement est conforme aux limites d'exposition aux rayonnements IC établies pour un
environnement non contrôlé. Cet équipement doit être installé et utilisé avec un minimum de
10mm de distance entre la source de rayonnement et votre corps.
End Product Labeling:
This module is designed to comply with the IC statement, IC: 10462A-ZB7. The host system using
this module must display a visible label indicating the following text:
"Contains IC: 10462A-ZB7412"
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Manual Information to the End User
The OEM integrator has to be aware not to provide information to the end user regarding how to
install or remove this RF module in the user’s manual of the end product which integrates this
module.
The end user manual shall include all required regulatory information/warning as shown in this
manual.
9.3. Europe
Hereby, Jorjin Technologies Inc. declares that the radio equipment type RF module is in compliance
with Directive 2014/53/EU
The full text of the EU declaration of conformity is available at the following internet address:
http://www.jorjin.com/upload/14XXXXXXXX.pdf
The compliance has been verified in the operating frequency band of 2400 MHz to 2483.5 MHz.
Developers and integrators that incorporate the ZB7412-00 RF Module in any end products are
responsible for obtaining applicable regulatory approvals for such end product.
The ZB7412-00 has been tested in the 2400-GHz to 2483.5-GHz ISM frequency band at 3.3 V with a
maximum peak power of 7.1 dBm EIRP across the temperature range –40°C to +85°C and tolerance.
Labeling and User Information Requirements
As a result of the conformity assessment procedure described in Annex III of the Directive
2014/53/EC, the end-customer equipment should be labeled as follows:
9.4. Japan
The ZB7412-00 is certified as a module with type certification number XXX-XXXXXX. End products
that integrate this module do not need additional MIC Japan certification for the end product.
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End product can display the certification label of the embedded module.
9.5. Taiwan
The ZB7412-00 is certified as a module with type certification number CCAXXXXXXXXXXX. End
products that integrate this module do not need additional NCC Taiwan certification for the end
product.
End product can display the certification label of the embedded module.
The user's manual should contain following warning (for RF device) in traditional Chinese:
注意
本產品符合低功率電波輻射性電機管理辦法：
第十二條
經形式認證合格之低功率射頻電機，非經許可，公司、商號或使用者均不得擅自變更頻率、加
大功率或變更原設計之特性及功能。
第十四條
低功率射頻電機之使用不得影響飛航安全及干擾合法通信；經發現有干擾現象時，應立即停
用，並改善至無干擾時方的繼續使用。
前項合法通信，指依電信規定作業之無線電信。低功率射頻電機須忍受合法通信或工業、科學
及醫療用電波輻射性電機設備之干擾。
系統廠商應於平台上標示「本產品內含射頻模組:
CCAXXXXXXXXXXX」字樣
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9.6. Australia/New Zealand
This module is conformity with the following standards
 AS/NZS 4268: 2012 Amdt 1-2013
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10. HISTORY CHANGE
Revision
Date
Description
R 0.1
2017/03/16
1. Official Released.
R 0.2
2017/03/22
1. Specification for Bluetooth 5 is to be added in near
future
R 0.3
2017/07/31
1. Add Bluetooth 5
2. Modify model number in this document.
3. Update marking information
4. Update regulatory information
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Source Exif Data: 
File Type                       : PDF
File Type Extension             : pdf
MIME Type                       : application/pdf
PDF Version                     : 1.5
Linearized                      : No
Page Count                      : 48
Language                        : zh-TW
Tagged PDF                      : Yes
Title                           : 1
Author                          : donny
Creator                         : Microsoft® Word 2010
Create Date                     : 2017:07:31 10:02:52+08:00
Modify Date                     : 2017:07:31 10:02:52+08:00
Producer                        : Microsoft® Word 2010
EXIF Metadata provided by EXIF.tools
FCC ID Filing: WS2-ZB7412

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